JPH11326366A - Semiconductor electronic component device and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a semiconductor electronic component device in which a gas generated in the bonding operation of a substrate to a lid plate is made to flow out to the outside, in which a vacuum at the inside is enhanced and whose operating state is enhanced, by a method wherein a temporary gap is formed in the bonding operation. SOLUTION: A housing space 13 which houses an acceleration detecting element 4 is formed between a substrate 2 and a lid plate 12 for an accelerometer 1. In addition, recessed grooves 14 and meltable protrusions 18 are formed in the bonding face 12B of the lid plate 12 to the substrate 2. Then, when the substrate 2 and the lid plate 12 are anodically bonded in a low-pressure atmosphere, a gap S is formed only near the recessed grooves 14 due to the meltable protrusions 18, and a gas which is generated inside the housing space 13 is made to flow out to the outside from the gap S. In succession, the meltable protrusions 18 are melted so as to flow into the recessed grooves 14, the substrate 2 and the lid plate 12 are bonded newly in the position of the gap S, and the housing space 13 is sealed airtightly.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor electronic component device suitably used for a detecting device such as a sensor having a closed detecting portion, and a method of manufacturing the same. The present invention relates to a semiconductor electronic component device configured to hermetically seal a detection element formed in a vacuum state and a method of manufacturing the same.

[0002]

2. Description of the Related Art In general, as a semiconductor electronic component device having a sealed structure, for example, a substrate formed of a silicon material or the like and having an acceleration detecting element displaceably formed on a surface thereof by an etching process, a glass material or the like An acceleration sensor is known which is formed of a cover plate and the like formed on the substrate and bonded to the substrate. An acceleration sensor of this type according to the related art detects an acceleration applied to a substrate as a displacement amount of an acceleration detecting element.

Here, the substrate and the cover plate are joined together in a reduced pressure atmosphere at the periphery of the acceleration detecting element by means such as anodic bonding, whereby the acceleration detecting element is formed between the substrate and the cover plate. It is housed in a closed state in the housing recess having a high degree of vacuum. Accordingly, the acceleration detecting element reduces the air resistance or the like received when the acceleration detecting element is displaced in the accommodating recess, so that the acceleration applied to the substrate can be detected with high accuracy.

[0004]

In the prior art described above, the substrate and the cover plate are anodically bonded in a reduced-pressure atmosphere, so that the accommodating recess for the acceleration detecting element formed therebetween is evacuated. It is configured to be hermetically sealed in a near reduced pressure state.

However, when the substrate and the cover plate are anodic-bonded, a gas such as oxygen is generated from the bonding surface.
In spite of the fact that the substrate and the cover plate are joined in a reduced-pressure atmosphere, at least a part thereof tends to remain in the accommodating recess for the acceleration detecting element. For this reason, in the related art, there is a problem that the acceleration detection element is easily affected by air resistance due to the residual gas in the accommodation recess, and it is difficult to improve the detection accuracy and reliability.

When a plurality of acceleration sensors are formed on the surface of a silicon wafer or the like, for example, the amount of gas remaining in the accommodating recess of each acceleration sensor is not constant. Not only tends to occur, but also the yield during manufacturing deteriorates.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems of the prior art, and the present invention is intended to reliably increase the degree of vacuum in a space formed between a substrate and a cover plate to accommodate a functional unit. It is an object of the present invention to provide a semiconductor electronic component device capable of efficiently manufacturing a semiconductor electronic component device having a stable operation state while improving the reliability of a functional unit, and a method of manufacturing the same.

[0008]

According to a first aspect of the present invention, there is provided a substrate having a functional portion formed on a surface thereof and a peripheral portion of the functional portion serving as a bonding surface. A housing recess for housing the functional unit on the substrate is formed on the surface to be bonded, and a joining surface is formed around the housing recess, and a lid plate is provided on the substrate by anodic bonding in a reduced-pressure atmosphere. In the semiconductor electronic component device, at least one of the joining surface of the substrate and the cover plate is provided with a fusible protrusion that melts at a temperature higher than the joining temperature of the substrate and the cover plate, and the joining surface is Adopts a configuration characterized by providing a concave groove surrounding the fusible projection and allowing the molten projection to flow in.

With this configuration, when the substrate and the cover plate are bonded together, these bonding surfaces can be bonded to each other except for the position around the fusible protrusion. Gas generated in the concave portion can flow out of the position of the fusible protrusion to the outside. Then, after heating and melting the fusible protrusion and flowing into the surrounding concave groove,
The substrate and the cover plate can be joined at the position where the fusible protrusion is present to seal the accommodation recess.

[0010] In the second aspect of the present invention, the substrate is formed of a silicon material, the cover plate is formed of a glass material, and the fusible projection is made of any one of gold, aluminum, solder and low melting point glass. .

Thus, when the substrate and the cover plate are joined,
A gap can be maintained between the substrate and the cover plate by the fusible protrusion having a melting temperature higher than the bonding temperature between the silicon material and the glass material. Further, for example, when gold is used as the fusible protrusion, the fusible protrusion can be melted at a lower temperature than the case of gold alone by eutecticizing the gold and the silicon material when the fusible protrusion is melted. it can.

Further, in the invention according to claim 3, the functional portion is formed on the substrate so as to be displaceable by using an etching process, and is configured as an external force detecting element for detecting a force applied from the outside as a displacement amount. .

Thus, when an external force such as acceleration or angular velocity is applied to the substrate, the external force detecting element is displaced in a space formed between the substrate and the cover plate, and the amount of the displacement is detected as the magnitude of the external force. can do.

On the other hand, according to a fourth aspect of the present invention, a functional part is formed on the surface, and a peripheral part of the functional part is a bonding surface, and the functional part on the substrate is accommodated on a surface facing the substrate. A method for manufacturing a semiconductor electronic component device, comprising: a housing recess formed and a joining surface formed around the housing recess, and a cover plate provided by being joined to the substrate. Forming a concave groove on at least one of the bonding surfaces, and melting at a temperature higher than a bonding temperature between the substrate and the cover plate at a position of the bonding surface surrounded by the concave groove. A fusible protrusion forming step of forming protrusions, and a first bonding step of bonding a bonding surface of the substrate and a bonding surface of the lid plate at a bonding temperature lower than a melting temperature of the fusible projection in a reduced-pressure atmosphere. The fusible protrusion is heated and melted in a reduced pressure atmosphere. A melting step of causing the molten protrusions to flow into the recessed groove, and a second bonding step of bonding a bonding surface of the bonding surface between the substrate and the cover plate, which is located near the concave groove, to each other in a reduced-pressure atmosphere. A manufacturing method including a joining step is employed.

[0015] Thus, in the concave groove forming step, a concave groove can be formed on the joint surface of the substrate or the cover plate, and in the fusible protrusion forming step, a fusible projection can be formed at a position surrounded by the concave groove. Then, in the first bonding step, the bonding surface between the substrate and the cover plate can be bonded in a reduced-pressure atmosphere, and at this time, the gas in the housing concave portion flows out from the position of the fusible protrusion to the outside between the substrate and the cover plate. be able to. Further, in the melting step, the fusible protrusion can be heated and melted to flow into the concave groove, and in the second joining step, the substrate and the cover plate are newly joined at the position where the fusible protrusion was located, and The recess can be sealed.

That is, since most parts other than the periphery of the fusible projection are joined by the first joining step, the unjoined portion left with a small area around the fusible projection in the second joining step. It is only necessary to perform anodic bonding, so that gas generated during anodic bonding can be reduced, and residual gas in the semiconductor electronic component device can be reduced.

Further, in the invention of claim 5, a relief groove surrounding the functional portion, the fusible protrusion and the concave groove is formed on at least one of the joining surface of the substrate and the cover plate. In the first joining step, the gas in the housing recess is caused to flow out through the relief groove to the outside.

Accordingly, when a plurality of functional parts are formed on a substrate such as a silicon wafer, for example, the plurality of functional parts, the fusible protrusions and the concave grooves, and the respective functional parts, the fusible protrusions and the concave grooves are respectively formed. Surrounding relief grooves can be formed in the substrate or lid plate. Then, in the first joining step, the gas in the accommodation recess accommodating each functional portion can escape from the position of the fusible protrusion to the outside through the groove.

[0019]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below in detail with reference to FIGS. 1 to 10 by taking an acceleration sensor as an example.

Reference numeral 1 denotes an acceleration sensor according to the present embodiment;
Is a substrate that constitutes the main body of the acceleration sensor 1. The substrate 2 is composed of a bottom plate 3 having a substantially rectangular shape formed of a single-crystal silicon material or the like, and a partition 10 to be described later.

Numeral 4 denotes an acceleration detecting element as a functional part formed on the bottom plate 3 of the substrate 2. The acceleration detecting element 4 is made of a low-resistance movable silicon material, as shown in FIGS. And a fixed electrode unit 6.

Reference numeral 5 denotes a movable portion provided on the bottom plate 3 of the substrate 2. The movable portion 5 is fixed to the bottom plate 3 via an insulating portion (not shown) substantially similar to an insulating portion 7 described later. The four supporting parts 5A, the beams 5B extending from the supporting parts 5A along the bottom plate 3, and the mass parts 5C and the like connected to the distal ends of the beams 5B are integrally formed. I have. The mass portion 5C keeps a state of being separated from the substrate 2 together with the beams 5B, and is displaceable with respect to the substrate 2 in a direction indicated by an arrow A in FIG.

Reference numerals 6 and 6 denote a pair of fixed electrode portions provided on both the left and right sides of the mass portion 5C. Each of the fixed electrode portions 6 is connected via an insulating portion 7 made of, for example, silicon oxide or silicon nitride. It is fixed on the bottom plate 3 of the substrate 2.

Reference numerals 8, 8,... Denote plate-shaped fixed electrodes integrally formed with the fixed electrode portions 6. Each fixed electrode 8 is directed from each fixed electrode portion 6 toward the mass portion 5C of the movable portion 5. Extending.

Reference numerals 9, 9,... Denote flat movable electrodes integrally formed with the mass portion 5C of the movable portion 5. Each movable electrode 9 is disposed on both the left and right sides of the mass portion 5C. It extends in a direction orthogonal to the A direction. Each movable electrode 9 faces the fixed electrode 8 with a gap in the direction of arrow A interposed therebetween.

Here, when an acceleration (external force) in the direction of arrow A is applied to the substrate 2, the mass portion 5 C of the movable portion 5 is displaced in the direction of arrow A with respect to the substrate 2 together with the movable side electrode 9, The dimension of the gap between the side electrode 9 and the fixed side electrode 8 changes according to the magnitude of the acceleration. Thus, the acceleration detecting element 4 is configured to detect the magnitude of the acceleration applied to the substrate 2 as a change in the capacitance between the movable electrode 9 and the fixed electrode 8.

Numeral 10 denotes a partition wall constituting a part of the substrate 2. The partition wall 10 is made of a low-resistance silicon material fixed on the bottom plate 3 via an insulating portion 11 substantially similar to the insulating portion 7.
A substantially rectangular frame surrounding the acceleration detecting element 4 is provided on the outer peripheral side of the bottom plate 3. Further, the partition wall 10 protrudes above the bottom plate 3 to the same height position as the movable portion 5 and the fixed electrode portion 6, and its distal end surface is a joint surface 10A with a lid plate 12 described later.

Reference numeral 12 denotes a substantially rectangular cover plate made of a glass material such as Pyrex glass. The cover plate 12 is located at the center of the surface (lower surface) facing the acceleration detecting element 4 and detects acceleration. Rectangular housing recess 12 for housing element 4
A is formed. Further, on the lower surface side of the lid plate 12, a bonding surface 12B to the substrate 2 side is formed at a position surrounding the accommodation recess 12A.

The joining surface 1 between the partition 10 and the cover plate 12
0A and 12B are joined to each other by using anodic bonding, whereby a housing space 13 accommodating the acceleration detecting element 4 is provided between the substrate 2 and the cover plate 12 at a position corresponding to the housing recess 12A of the cover plate 12. Are formed in a sealed state. Further, the cover plate 12 has, for example, six electrode extraction holes 12C, 1C.
2C,... Are formed in the plate thickness direction.
Is closed by the support portions 5A and the fixed electrode portions 6 of the acceleration detecting element 4.

.., Are fusible protrusions 18 described later.
For example, there are six concave grooves formed on the joint surface 12B of the cover plate 12 surrounding the concave groove 14 (see FIG. 6).
And as shown in FIG. 4, it has an opening in the joint surface 12B with a square opening. The recessed grooves 14 are arranged at intervals from each other in a state of being surrounded by the bonding surface 12B, and the internal space is sealed by the bonding surface 10A on the substrate 2 side.

The cover plate 12 has a columnar projection 15 extending from the center of the bottom of each groove 14 toward the joint surface 12B.
Are formed, and each of the convex portions 15 is surrounded by the concave groove 14, and the front end surface thereof is disposed on the same plane as the joint surface 12 </ b> B of the cover plate 12.

Are recessed grooves 14 of the cover plate 12.
In each of the melts 16, for example, six melts
As shown in FIGS. 3 and 4, when the substrate 2 and the cover plate 12 are joined in a first joining step described later,
Numeral 8 is provided beforehand on the distal end side of each convex portion 15 of the lid plate 12, and is solidified while flowing into each concave groove 14 by being heated and melted in a melting step described later.

The melt 16 (fusible protrusion 18)
Is the bonding temperature between the substrate 2 and the cover plate 12 (for example, 350 ° C.)
It is made of a material such as a metal or a low-melting glass which melts or liquefies at a higher temperature, for example, gold (Au) or eutectic at a temperature of about 370 ° C., which becomes eutectic with silicon (Si) on the substrate 2 side and becomes molten It is made of the alloy or the like.

Are conductive pastes formed mainly of silver or the like. Each of the conductive pastes 17 is filled in each of the electrode extraction holes 12C of the cover plate 12, and the movable electrode 9 and the fixed The detection signal from the side electrode 8 is led out of the cover plate 12 via the movable part 5 and the fixed electrode part 6.

The acceleration sensor 1 according to the present embodiment has the above-described configuration. Next, a method of manufacturing the acceleration sensor 1 will be described with reference to FIGS.

First, in the concave groove forming step and the fusible protrusion forming step shown in FIG. 5, the concave groove 14 is formed on the cover plate 12 made of a glass material by a processing means such as sandblasting, etching, or laser. Subsequently, a metal film such as gold is formed on the joint surface 12B of the cover plate 12, and the metal film is etched. .. Shown in FIG. 6 are formed on the distal end side of the convex portion 15 surrounded by the concave grooves 14, and each of the fusible projections 18 is formed from the joint surface 12 </ b> B of the cover plate 12. For example, it is projected toward the substrate 2 with a projection dimension of about 0.1 to 1 μm.

Next, in the first bonding step shown in FIG. 7, first, the bonding surface 10A on the substrate 2 and the bonding surface 12B on the cover plate 12 set in a decompression chamber of a vacuum anodic bonding apparatus are bonded to each other. Let it. As a result, the fusible protrusion 18 is
A, 12B, and in the vicinity of this position, the joining surface 1
A slight gap S is formed between 0A and 12B.

In this bonding step, the bonding surfaces 10A and 12B are bonded to each other in a reduced-pressure atmosphere close to vacuum using anodic bonding, and the bonding temperature at this time is maintained at, for example, 350.degree. As a result, the fusible projection 18 is melted (eutectic).
Since the temperature is about 370 ° C., the solid state is maintained, and most of the joining surfaces 10A and 12B are joined except for the position of the gap S in the entire peripheral area surrounding the housing space 13.

The joining surface 12B of the cover plate 12 has a peripheral portion of each electrode extraction hole 12C joined to each support portion 5A and each fixed electrode portion 6 on the substrate 2 side, thereby forming each electrode extraction hole 12C. The bottom side is closed. Further, at this time, gas such as oxygen generated from the joint surfaces 10A and 12B except for the position of the gap S flows out from the position of the fusible protrusion 18 through the gap S.

Next, in the melting step shown in FIG. 8, the substrate 2 and the like are heated in a reduced-pressure atmosphere to a temperature of, for example, about 400 ° C., so that the fusible protrusions 18 made of gold are eutecticized with the partition walls 10 made of silicon. To melt. As a result, each of the fusible protrusions 18 liquefies and flows into each of the recessed grooves 14 of the lid plate 12, and is crushed and flat at the position of the joint surface 12B, so that the gap S between the joint surfaces 10A and 12B disappears. ,
The joining surfaces 10A and 12B come into contact with each other in the vicinity of each concave groove 14.

Accordingly, in the next second bonding step, each of the concave grooves 14 in the bonding surfaces 10A and 12B is formed by using anodic bonding.
The small unjoined portion left in the vicinity of is newly joined in a reduced pressure atmosphere, whereby the accommodation space 13 is sealed in a reduced pressure state close to a vacuum. Here, when the substrate 2 and the cover plate 12 are joined in the second joining step, the state shown in FIG. 3 is obtained.

That is, since most parts other than the periphery of each fusible projection 18 are joined by the first joining step, in the second joining step, the periphery of each fusible projection 18 (each concave groove 14) is formed. It is only necessary to perform anodic bonding on the unbonded portion left in a small area, so that the gas generated during anodic bonding can be reduced, and the residual gas in the housing space 13 can be reduced.

Further, in order to provide a signal terminal or the like to the acceleration sensor 1 completed in the second joining step, a conductive paste 17 is filled in each electrode extraction hole 12C of the cover plate 12.

When the acceleration sensor 1 is manufactured by the above steps, a plurality of acceleration sensors 1 are formed on a silicon wafer 19 prepared in advance, as shown in FIGS. That is, a silicon wafer 19 serving as the substrate 2 of each acceleration sensor 1 and a glass plate 20 serving as the cover plate 12
Then, the concave groove forming step, the fusible projection forming step, the first joining step, the melting step, and the second joining step are performed on the groove.
At this time, each of the acceleration sensors 1
Accommodation recess 12A, recessed groove 14, fusible projection 18,
.. Are formed.

Here, each relief groove 21 is provided on the joint surface 12B of the cover plate 12 of each acceleration sensor 1, and the acceleration detecting element 4, the accommodating concave portion 12A, and the concave groove 1 of each acceleration sensor 1 are provided.
4. It extends in a lattice shape surrounding the fusible projections 18 and the like.
In a state where the silicon wafer 19 and the glass plate 20 are joined in the first joining step, the accommodating spaces 13 of the acceleration sensors 1 communicate with the escape grooves 21 at the positions of the fusible projections 18, respectively. Reference numeral 21 denotes an end opening to the outside.

Thus, in the first bonding step, each of the storage spaces 1 is bonded when the silicon wafer 19 and the glass plate 20 are bonded.
The gas generated in 3 flows out to the outside through each relief groove 21, and in the second joining step, each accommodation space 13 can be sealed in a high vacuum state. After the second joining step is performed, each acceleration sensor 1 is cut off at the position of the relief groove 21 as shown by a two-dot chain line in FIG. 10, for example.

Thus, in the present embodiment, since the fusible projection 18 and the concave groove 14 are provided at the joint surface 12B of the cover plate 12, the first joining step The generated gas can flow out from the position of the fusible protrusion 18 to the outside. In the melting step, the melt of the fusible protrusion 18 flows into the surrounding concave groove 14 as the melt 16, and The gap S can be eliminated.

Thus, in the second bonding step, the substrate 2
Recesses 14 of the joint surfaces 10A and 12B
It is only necessary to join a small unjoined part left in the vicinity of the space, and since the generated gas is small, the housing space 13 can be reliably sealed in a high vacuum state, and the gas such as oxygen remaining in the inside can be greatly reduced. Can be reduced.

In this case, each fusible projection 18
Since the concave groove 14 is provided at a position surrounding the concave groove 14, the melt of each fusible projection 18 can be stably accommodated in the concave groove 14 in the melting step. Accordingly, the molten material of each of the fusible protrusions 18 is crushed between the substrate 2 and the cover plate 12 and greatly expanded, and extends between the accommodation space 13 and the outside in a state where they are connected to each other by the concave grooves 14. It can be reliably prevented.

That is, if the molten material of each fusible projection 18 extends continuously between the joining surfaces 10A and 12B as shown by the imaginary line in FIG. 4, the second joining step is performed. However, since the joining surfaces 10A and 12B cannot be joined at the position of the melt, an unjoined portion that allows the housing space 13 to communicate with the outside may be left between the joining surfaces 10A and 12B. However, in the present embodiment, the molten material of each of the fusible projections 18 generated in the melting step can be reliably accommodated in the concave groove 14, so that the accommodation space 13 can be held in a stable and sealed state.

Therefore, according to the present embodiment, the acceleration detecting element 4 can be stably displaced in the accommodation space 13 having a high degree of vacuum according to the external acceleration, and the acceleration detection accuracy and the detection operation Can be reliably improved. In addition, it is possible to suppress the occurrence of variation in detection accuracy for each acceleration sensor 1 in accordance with the amount of gas remaining in the accommodation space 13, and it is possible to efficiently manufacture the acceleration sensor 1 with stable detection accuracy, and to increase the production yield. Can be improved.

Further, a plurality of relief grooves 21 extending in a grid pattern with respect to the glass plate 20 serving as the lid plate 12 of each acceleration sensor 1.
In the first joining step, the gas generated in each storage space 13 can be reliably discharged to each relief groove 21 through the gap S formed by the fusible protrusion 18, and the large number of acceleration sensors 1 Even when it is formed on the space 19, the pressure reduction and sealing work of each accommodation space 13 can be performed efficiently.

In the above embodiment, the fusible protrusion 1
8 (melt 16), concave groove 14, escape groove 21 and the like
However, the present invention is not limited to this, and may be provided on the substrate 2 side, that is, on the silicon wafer 19 side, or between the substrate 2 and the cover plate 12. It is good also as a structure provided in both.

In the above embodiment, the escape groove 21
Is extended from the periphery of each acceleration sensor 1 to the outer peripheral end of the silicon wafer 19, and is communicated to the outside at the end surface side. However, the present invention is not limited to this, and the escape groove is formed on the substrate 2 of each acceleration sensor 1. A configuration may be adopted in which the relief groove is provided only at the surrounding position and the relief groove communicates with the outside using a ventilation hole formed in the silicon wafer 19 or the glass plate 20 in the thickness direction.

Further, in the above-described embodiment, the case where, for example, gold or an alloy thereof is used as the fusible projection 18 is exemplified. However, the present invention is not limited to this. What is necessary is just to make it the structure higher than the joining temperature with the board | plate 12, and lower than the softening temperature of the cover board 12, etc., for example, a fusible protrusion may be comprised by aluminum, a solder alloy, low melting glass, etc.

In the above-described embodiment, the acceleration sensor 1 has been described as an example of the semiconductor electronic component device. However, the present invention is not limited to this, and the functional unit is disposed between the substrate and the cover plate under reduced pressure. The present invention may be applied to any semiconductor electronic component device having a hermetically sealed configuration. For example, the present invention may be applied to a semiconductor electronic component device having a function unit for detecting angular velocity, speed, pressure, and the like.

[0057]

As described in detail above, according to the first aspect of the present invention, the structure in which the fusible protrusion and the concave groove are provided on the joint surface of the substrate or the cover plate is provided. When anodic bonding is performed, the gas generated in the space formed between them can flow out from the position of the fusible protrusion to the outside, and after the fusible protrusion is heated and melted, it is left near the concave groove. The space accommodating the functional unit can be reliably sealed in a high vacuum state by only joining a small unjoined portion.

When the fusible protrusions are heated and melted, the fusible protrusions can be stably flowed into the surrounding recessed grooves, and the fusible protrusions can be largely deposited on the joint surface between the substrate and the cover plate. It is possible to reliably prevent the joining state from being reduced by the recessed groove, and it is possible to maintain the space formed between the substrate and the cover plate in a stable and sealed state. Therefore, the functional unit can be operated stably in the space, the reliability thereof can be surely improved, and a semiconductor electronic component device whose operating state is stable can be efficiently manufactured.

According to the second aspect of the present invention, the fusible projection is made of any one of gold, aluminum, solder and low-melting glass. The gap between the substrate and the cover plate can be reliably formed by the fusible protrusion that melts at a temperature higher than the temperature, and the gas in the space containing the functional unit can be stably discharged to the outside from the gap. it can. Further, for example, when gold is used as the fusible protrusion, the fusible protrusion can be easily melted at a lower temperature than that of the case of gold alone by eutecticizing the fusible protrusion with a substrate made of a silicon material.

Further, according to the third aspect of the present invention, since the function section is constituted by the external force detecting element formed so as to be displaceable on the substrate, the external force detecting element is formed by the degree of vacuum formed between the substrate and the cover plate. In a high space, the displacement can be stably performed according to the external force, and the detection accuracy of the external force and the reliability of the detection operation can be reliably improved.

On the other hand, according to the invention of claim 4, the semiconductor electronic component device is manufactured by the concave groove forming step, the fusible projection forming step, the first joining step, the melting step, and the second joining step. Therefore, in the first joining step, gas generated in the space formed between the substrate and the lid plate can be discharged to the outside from the position of the fusible protrusion, and the melt of the fusible protrusion is discharged in the melting step. It can flow stably into the surrounding recessed groove. In the second joining step, it is only necessary to join a small unjoined portion left in the vicinity of the concave groove, so that the generated gas is reduced and the space accommodating the functional unit is securely sealed in a high vacuum state. be able to. Therefore, the functional unit can be operated stably in the space, the reliability thereof can be surely improved, and a semiconductor electronic component device whose operating state is stable can be efficiently manufactured.

According to the fifth aspect of the present invention, a semiconductor electronic component device is manufactured by forming a relief groove in a substrate or a cover plate. For example, a plurality of functional units are provided on a substrate such as a silicon wafer. When forming, the gas in the plurality of spaces accommodating each functional part between the substrate and the lid plate can be reliably discharged to the outside through the escape groove from the position of the fusible protrusion, and a large number of functional parts Can be efficiently performed even when the substrate is formed on the substrate.

[Brief description of the drawings]

FIG. 1 is a partially cutaway front view of an acceleration sensor according to an embodiment of the present invention.

FIG. 2 is a longitudinal sectional view as seen from the direction of arrows II-II in FIG.

FIG. 3 is an enlarged sectional view of a main part in FIG. 2, showing a state in which a substrate and a cover plate are joined.

FIG. 4 is a sectional view as seen from the direction of arrows IV-IV in FIG. 3;

FIG. 5 is a longitudinal sectional view showing a state in which a concave groove and a fusible protrusion are formed on a joint surface of a lid plate by a concave groove forming step and a fusible protrusion forming step.

FIG. 6 is an enlarged sectional view of a main part in FIG. 5, showing a fusible protrusion and a concave groove provided on a cover plate.

FIG. 7 is a longitudinal sectional view showing a first joining step of joining a substrate and a cover plate.

FIG. 8 is an enlarged sectional view of a main part showing a melting step of melting the fusible protrusion.

FIG. 9 is a front view showing a silicon wafer and a glass plate on which a number of acceleration sensors are formed.

FIG. 10 is an enlarged longitudinal sectional view showing three adjacent acceleration sensors among the acceleration sensors in FIG. 9;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Acceleration sensor 2 Substrate 4 Acceleration detecting element (functional part) 12 Cover plate 12A Housing recess 13 Housing space 14 Depression groove 16 Melt (fusible protrusion) 18 Melt protrusion 19 Silicon wafer (substrate) 20 Glass plate (cover plate) 21 Escape groove

Claims (5)

[Claims] 1. A substrate having a functional part formed on the surface and a peripheral part of the functional part serving as a bonding surface, and a receiving recess for receiving the functional part on the substrate is formed on a surface facing the substrate. A bonding surface is formed around the housing recess, and a semiconductor electronic component device comprising a lid plate provided on the substrate by anodic bonding in a reduced pressure atmosphere, wherein at least one of the substrate and the lid plate is provided. The joining surface is provided with a fusible projection that melts at a temperature higher than the joining temperature of the substrate and the lid plate, and the joining surface is surrounded by a recessed groove surrounding the fusible projection and allowing the molten projection to flow. A semiconductor electronic component device characterized by comprising: 2. The substrate according to claim 1, wherein the substrate is formed of a silicon material, the cover plate is formed of a glass material, and the fusible protrusion is formed of one of gold, aluminum, solder, and low-melting glass. Semiconductor electronic parts equipment. 3. The external force detecting element according to claim 1, wherein the functional unit is formed on the substrate so as to be displaceable by using an etching process, and detects an externally applied force as a displacement amount. Semiconductor electronic parts equipment. 4. A substrate having a functional portion formed on the surface and a peripheral portion of the functional portion serving as a bonding surface, and a concave portion for receiving the functional portion on the substrate is formed on a surface facing the substrate. A method of manufacturing a semiconductor electronic component device, comprising: a joining surface formed around the housing recess, and a lid plate provided on the substrate and joined thereto, wherein at least one of the substrate and the lid plate is provided. A concave groove forming step of forming a concave groove in the joint surface; and a fusible protrusion for forming a fusible protrusion at a position of the joint surface surrounded by the concave groove at a temperature higher than a joining temperature of the substrate and the cover plate. A forming step, a first bonding step of bonding the bonding surface of the substrate and the bonding surface of the lid plate at a bonding temperature lower than the melting temperature of the fusible protrusion in a reduced-pressure atmosphere, and reducing the pressure of the fusible protrusion. Melting by heating and melting in atmosphere A melting step of causing the projections to flow into the concave groove; and a second bonding step of bonding the bonding surfaces of the bonding surface between the substrate and the cover plate, which are located near the concave groove, to each other in a reduced-pressure atmosphere. Of manufacturing a semiconductor electronic component device. 5. A relief groove surrounding at least one of the substrate and the cover plate, the relief groove surrounding the functional portion, the fusible protrusion and the concave groove, wherein in the first bonding step, 5. The method of manufacturing a semiconductor electronic component device according to claim 4, wherein the gas in the housing recess is caused to flow out through the relief groove to the outside.