JPH11319682A - Rotary wet type treatment and rotary wet type treating device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress a usage of liquid chemicals and an occupancy area of the treating device to the minimum. SOLUTION: A substrate 4 in which a resist pattern is formed is mounted on a rotary table 12 in a cup. A separation shutter 16 is raised, and circulating thinner in a circulation tank 2 is discharged from a liquid chemicals discharge part 7 while rotating the rotary table 12 in the cup and the substrate 4. The circulating thinner on the substrate 4 is spread on the substrate 4 by centrifugal force to remove a resist pattern and dispersed radially and allowed to enter into a waste liq. part 13 and abandoned through a waste liq. line 15. The separation shutter 16 is lowered, and a separation hole 13a is closed, and the circulating thinner is discharged from the part 7 and recovered to the circulation tank 2 through a recovering line 14. Lastly, an unused thinner is discharged from the liquid chemicals discharge part 7 and recovered to the circulation tank 2 through the recovering line 14.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wet processing method and a wet processing apparatus, and more particularly, to a wet processing method in which a chemical solution is discharged onto a substrate.

[0002]

2. Description of the Related Art In recent years, so-called flat panel displays such as a liquid crystal display and a plasma display have been partially replaced by cathode ray tube systems, and have been put to practical use as monitors for personal computers or as wall-mounted television receivers. It is being done. Along with this, the panel size tends to increase. From the viewpoint of production, in order to supply large-sized panels at a lower cost, it is most effective to increase the number of panels (theoretical yield) that can be obtained from one substrate. Therefore, the size of the substrate is increasing.

In the panel manufacturing process, when forming wiring and electrodes, in any case, a photoresist is applied onto a substrate, and the pattern is transferred by irradiating ultraviolet light through a photomask. A so-called photolithography technique for performing development, etching and resist stripping is used. In a manufacturing process of an active matrix type liquid crystal display using silicon (Si), natural oxidation using diluted hydrofluoric acid (HF) is performed in order to secure good electrical contact between the metal film and the Si film. The film is removed (light etching).

[0004] As described above, wet processing such as development, wet etching, resist stripping, and light etching has been carried out. The process has been shifted to a single-wafer type in which a process of immersing in a chemical solution or a process of discharging a chemical solution in a shower is carried out one by one from tank to tank with a tact.

Here, an example of this single wafer processing apparatus and an example of wet processing of a substrate using the wet processing apparatus will be described.

That is, as shown in FIG. 4, the conventional single-wafer processing apparatus has a first processing tank 102 and a second processing tank 103 for performing a wet processing of a substrate 101.

In the first processing tank 102 of this wet processing apparatus, a chemical solution in a circulation tank 104 is supplied to a chemical solution nozzle 107 through a chemical solution line 105 by a pump 106 provided in a chemical solution line 105, and from there. While discharging, the chemical solution inside the circulation tank 104 is
By a pump 109 provided in the chemical solution line 108,
It is made to flow up through the chemical solution line 108 and supplied to the inside of the first processing tank 102. Thereby, the substrate 101
Of wet processing. Note that the chemical solution inside the first processing tank 102 is maintained to such an extent that the substrate 101 is immersed. On the other hand, the chemical used for the wet processing of the substrate 101 inside the first processing tank 102 is returned to the circulation tank 104 through the recovery line 110. After the completion of the wet processing in the first processing tank 102, the substrate 101 is unloaded from the first processing tank 102 by the transport mechanism 111, and then the second processing is performed.
Is carried into the processing tank 103.

In the second processing tank 103, the chemical inside the circulation tank 112 is transferred to the chemical line 11 in the same manner as in the wet processing of the substrate 101 in the first processing tank 102.
3 by the pump 114 provided in the
The liquid is supplied to the chemical liquid nozzle 115 through the nozzle 3 and is discharged therefrom, and the chemical liquid in the circulation tank 112 is flowed up into the second processing tank 103 through the chemical liquid line 116 by the pump 117 provided in the chemical liquid line 116. Then, the substrate 101 is supplied to the inside of the second processing tank 103 to perform wet processing of the substrate 101. Note that the chemical solution inside the second processing tank 103 is maintained to such an extent that the substrate 101 is immersed. On the other hand, the chemical used for the wet processing of the substrate 101 inside the second processing tank 103 is returned to the circulation tank 112 through the recovery line 118. After the completion of the wet processing in the second processing tank 103, the substrate 101 is carried out of the second processing tank 103 by the transport mechanism 111.

As described above, the wet processing of the substrate 101 is performed by the single wafer type wet processing apparatus.

[0010]

However, the above-mentioned conventional wet processing method and wet processing apparatus have the following problems.

That is, when a substrate is subjected to wet processing using a single-wafer-type wet processing apparatus, the amount of a chemical solution required to process one substrate is proportional to the area of the substrate. Further, in order to perform wet processing one after another at a predetermined tact, a processing tank having a value obtained by dividing a time required for wet processing per substrate by a tact time is required. Now, the size of the substrate is approaching the metric square class.
01 one by one from the first processing tank 102 to the second processing tank 1
In a so-called flat-flow wet processing apparatus, for example, in which the chemical liquids are sequentially conveyed to 03, the amount of use of the chemical solution increases exponentially, and the cost and the waste liquid treatment are broken down. Further, the occupied area of the wet processing apparatus increases as the number of processing tanks increases, and thus the increase in the occupied area increases costs such as maintenance costs of a clean room in which the wet processing apparatus is disposed.

Therefore, in wet processing, a technique for minimizing the area occupied by the wet processing apparatus while minimizing the amount of chemical solution used has been strongly desired.

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a wet processing method capable of reducing the amount of a chemical solution used for wet processing and minimizing the amount of the chemical used.

Another object of the present invention is to minimize the amount of the chemical solution used, to minimize the occupied area, and to reduce the cost of a clean room and the like. An object of the present invention is to provide a wet processing apparatus.

[0015]

According to a first aspect of the present invention, there is provided a wet processing method in which a chemical solution is discharged onto a substrate to perform a wet processing. First used at least once in the process
Wherein the wet treatment is performed by discharging the chemical solution to the substrate, and at least lastly, the second chemical solution that has never been used in the wet process is discharged to the substrate to perform the wet process. It is.

In the first invention, typically, after the second chemical is discharged to the substrate to perform wet processing, the second chemical is removed from the substrate and collected. In the first invention, preferably, pure water is discharged onto the substrate after the second chemical solution is collected, in order to clean the substrate. In the first invention, among the first chemicals discharged to the substrate, at least the first chemical discharged to the substrate is discarded after being removed from the substrate. The pure water adhering to the substrate after the cleaning is preferably disposed of in the same manner as the first chemical liquid.

In the first invention, in order to maintain a high quality chemical solution stored in a tank or the like for a long time,
The wet processing method typically performs a wet processing by discharging a first chemical solution onto a substrate, and then removes the first chemical solution from the substrate and then discards the first chemical solution. And a second step of discharging the first chemical solution onto the substrate to perform wet processing, and then removing the first chemical solution from the substrate and then collecting the first chemical solution.

In the first invention, typically, the chemical solution discharged to the substrate is removed from the substrate by rotating the substrate. In the first invention, the rotation of the substrate is preferably rotation about an axis normal to the surface of the substrate, and more preferably, the rotation of the substrate in the direction normal to the surface of the substrate. , Rotation about an axis passing through the center of the substrate.

In the first invention, in order to spread the chemical solution efficiently on the substrate and to perform the wet process in a short time, typically, the substrate is rotated and the chemical solution is discharged onto the substrate. Perform wet processing. In the first invention, preferably, the substrate is rotated around an axis normal to a surface of the substrate.

In the first invention, preferably, the first
After the wet treatment is performed by discharging the chemical solution and / or the second chemical solution to the substrate, the chemical solution used in these wet processes is filtered and cleaned, and used as the first chemical solution in the wet process of the substrate.

In the first invention, typically, the wet processing is performed in a single-wafer manner.

According to a second aspect of the present invention, there is provided a wet processing apparatus having a chemical liquid discharging means for discharging a chemical liquid onto a substrate, wherein the chemical liquid discharging means discharges a chemical liquid onto the substrate to perform wet processing. First, the first chemical solution used at least once in the wet processing is discharged to the substrate by the chemical liquid discharging means to perform the wet processing, and at least finally, the second chemical liquid which has never been used in the wet processing is discharged by the chemical liquid discharging means. And a wet process is performed by discharging the chemical solution onto the substrate.

In the second aspect of the invention, the wet processing apparatus typically has substrate rotating means for rotating the substrate, rotates the substrate by the substrate rotating means, and discharges the chemical liquid to the substrate by the chemical liquid discharging means. It is configured to be.

In the second aspect of the invention, the wet processing apparatus typically includes a removing means for removing the chemical solution discharged from the substrate by the chemical solution discharging means, and a chemical solution removed from the substrate by the removing means. Preferably, the removing means is configured to remove the chemical solution from the substrate by rotating the substrate.

In the second aspect of the invention, the wet processing apparatus typically includes a removing means for removing the chemical solution discharged from the substrate by the chemical solution discharging means, and a chemical solution removed from the substrate by the removing means. Preferably, the removing means is configured to remove the chemical solution from the substrate by rotating the substrate.

In the second invention, typically, of the first chemical solution discharged to the substrate by the chemical solution discharging means,
At least the first chemical liquid ejected to the substrate is first removed from the substrate, and then disposed by a disposal unit. Note that the disposal means can also discard liquid such as pure water.

In the second aspect of the invention, the wet processing apparatus typically includes a removing unit for removing the chemical solution discharged to the substrate by the chemical solution discharging unit, and a chemical solution removed from the substrate by the removing unit. And a chemical liquid collecting means for collecting the chemical liquid removed from the substrate by the removing means.

In the second aspect of the invention, the wet processing apparatus typically includes a removing means for removing the chemical solution discharged to the substrate from the substrate by the chemical solution discharging means, and a chemical solution removed from the substrate by the removing means. And a chemical solution circulating means for circulating the chemical solution to the chemical solution discharging means along the path.

[0029] In the second aspect of the invention, preferably, there is provided a pure water discharging means for discharging pure water to the substrate for rinsing the substrate with pure water. Note that pure water discharged and attached to the substrate is removed from the substrate by rotating the substrate.

In the second invention, more preferably,
There is a chemical cleaning means for filtering and cleaning the first chemical and / or the second chemical used in the wet processing of the substrate.

In the second aspect of the invention, the wet processing apparatus is typically a single wafer processing apparatus. However, if necessary, a batch processing wet processing apparatus may be used as an exception. Good.

In the first and second aspects of the present invention configured as described above, at least first, the first chemical liquid used at least once in the wet processing is discharged to perform the wet processing, and at least the last. In addition, by performing the wet process by discharging the second chemical solution that has never been used in the wet process, it is possible to perform the process using a clean chemical solution at the end of the wet process of the substrate. In addition, the amount of the chemical used can be reduced.

[0033]

Embodiments of the present invention will be described below with reference to the drawings. In all the drawings of the following embodiments, the same or corresponding portions are denoted by the same reference numerals.

First, a wet processing apparatus according to a first embodiment of the present invention will be described. FIG. 1 shows a wet processing apparatus according to the first embodiment.

The wet processing apparatus according to the first embodiment comprises a new liquid tank 1, a circulation tank 2 and a wet processing section 3, as shown in FIG. The new liquid tank 1 is for storing a chemical liquid that has never been used in the wet processing of the substrate 4, that is, an unused chemical liquid.
Its capacity is, for example, 40 l. The circulation tank 2 circulates through a predetermined path described later in the wet processing apparatus and stores a chemical solution used at least once in the wet processing of the substrate 4, that is, a so-called circulating chemical solution.
0l. The wet processing section 3 is for performing wet processing on the substrate 4, for example, processing for removing a resist pattern.

A chemical liquid line 5 is connected to the new liquid tank 1, and a pump 6 is provided in the chemical liquid line 5.
The chemical solution line 5 is branched into a chemical solution line 5a and a chemical solution line 5b on the way. The new liquid tank 1 is connected to a chemical liquid discharge section 7 in the wet processing section 3 through a chemical liquid line 5 and a chemical liquid line 5a, and is connected to a chemical liquid line 8b to be described later through the chemical liquid line 5 and the chemical liquid line 5b. Central nozzle 10
It is connected to the. The pump 6 is for supplying an unused chemical liquid stored in the new liquid tank 1 to the chemical liquid discharge section 7 through the chemical liquid line 5a, and is connected to the center of the table through the chemical liquid line 5b and a chemical liquid line 8b described later. This is for supplying to the nozzle 10.

A chemical line 8 is connected to the circulation tank 2. The chemical liquid line 8 is provided with a pump 9. Also, the chemical liquid line 8 is branched in the middle, one chemical liquid line 8a is connected in the middle of the chemical liquid line 5a, and the other chemical liquid line 8b passes through the inside of the central axis of the in-cup rotating table described later. It is connected to the table center nozzle 10. The pump 9 is for supplying the circulating chemical in the circulation tank 2 to the chemical discharge section 7 through the chemical liquid line 8a and the chemical liquid line 5a, and for supplying the circulating chemical to the table central nozzle 10 through the chemical liquid line 8b. It is.

The wet processing section 3 includes a cup 11, a rotary table 12 in the cup, a chemical solution discharging section 7, and a waste liquid section 13.
It is composed of

The cup 11 is for recovering or discarding the chemical solution discharged to the substrate 4 and removed from the substrate 4, and has a bottom surface having a high central portion and a lower peripheral portion than the central portion, that is, a so-called bottom shape. It is formed in a mountain shape, and its side wall surface is composed of a cylindrical portion and a portion protruding in a brim shape inward above the cylindrical portion. A collection line 14 is connected to the periphery of the bottom surface of the cup 11, and the cup 11 and the circulation tank 2 are connected by the collection line 14. The collection line 14 includes the substrate 4
This is for returning the chemical solution removed from the tank 11 to the circulation tank 2 from inside the cup 11.

The inside of the cup 11 has a cylindrical side wall 11.
a is further provided, and the waste liquid portion 13 is constituted by the cylindrical side wall 11 a and the side wall surface of the cup 11. Further, in the waste liquid portion 13, the upper end of the portion of the side wall surface of the cup 11 protruding in a brim shape and the cylindrical side wall 11.
A separation hole 13a is defined by the upper end of the hole a. A waste liquid line 15 is connected to the bottom of the waste liquid part 13,
The chemical liquid entering the waste liquid section 13 through the separation hole 13a can be discarded through the waste liquid line 15. Further, a separation shutter 16 that can move up and down so as to cover the separation hole 13a is provided.
The separation shutter 16 is for opening and closing the separation hole 13a, and the separation hole 13a can be opened by moving the separation shutter 16 upward. The dotted line indicates the separation shutter 16 when the separation shutter 16 is moved upward and the separation hole 13a is opened.
Indicates the position of.

The in-cup rotary table 12 is provided such that its central axis is located at the center of the cup 11. The upper portion of the in-cup rotating table 12 can hold a substrate 4 such as a glass substrate or a semiconductor wafer. In addition, the rotary table 12 in the cup
Is designed so that the substrate 4 can be rotated about the normal direction of the center of the surface as an axis.

The chemical solution discharging section 7 is provided with the rotary table 1 in the cup.
2 above. When the substrate 4 is placed on the rotary table 12 in the cup, the chemical solution discharge section 7 is provided at a height of, for example, 15 cm from the upper surface thereof. The chemical discharge section 7 has chemical liquid nozzles 7a and 7b. The chemical liquid nozzle 7a is provided substantially above the center of the substrate 4, that is, substantially above the center of the in-cup rotating table 12. The chemical liquid nozzle 7b is provided at the same height as the chemical liquid nozzle 7a and at a position separated from the chemical liquid nozzle 7a by, for example, about 27 cm.

Next, a description will be given of a step of removing a resist pattern on a substrate using the wet processing apparatus configured as described above.

First, the vertical and horizontal dimensions are, for example, 550 mm × 6.
After a resist pattern (not shown) for an exposure test is formed on a substrate 4 made of a square glass substrate having a thickness of 50 mm and a thickness of 0.7 mm, for example, a post-baking process is performed at a temperature of 110 ° C., for example. The thickness of this resist pattern is, for example, 1.6 μm. Next, as shown in FIG. 1, the substrate 4 is placed on the rotary table 12 in the cup, and the separation shutter 16 is moved upward, so that the separation hole 13a is opened.

Next, the substrate 4 is rotated at the same rotation speed by rotating the in-cup rotation table 12 about its central axis at a rotation speed of, for example, 60 rpm. After the rotations of the in-cup turntable 12 and the substrate 4 are stabilized, the pump 9 is operated to remove the thinner stored in the circulation tank 2 and used at least once in the step of removing the resist pattern (hereinafter, circulation thinner). )
Is supplied to the chemical liquid discharge section 7 and the table central nozzle 10 through the chemical liquid lines 8a and 8b, respectively, and is discharged to the substrate 4 from the chemical liquid nozzles 7a and 7b and the table central nozzle 10, respectively. Here, the amount of the circulating thinner discharged from the chemical liquid nozzles 7a and 7b and the table center nozzle 10 is, for example, 100 cc in total.

The centrifugal force due to the rotation of the substrate 4 acts on the circulation thinner discharged to the substrate 4. Thereby, the circulation thinner spreads radially with respect to the substrate 4. Then, the spread circulating thinner reacts with the resist on the substrate 4, and the resist pattern is removed. Thereafter, the circulating thinner that has completed the reaction with the resist on the substrate 4 is
From the waste liquid portion 1 through the separation hole 13a.
Collected in 3. Here, of the circulating thinner discharged to the substrate 4, 95% or more of the circulating thinner is collected by the waste liquid section 13 through the separation hole 13 a and discarded through the waste liquid line 15. Thereafter, the separation hole 13a is closed by moving the separation shutter 16 downward.

Subsequently, by operating the pump 9 again, the circulating thinner in the circulating tank 2 is discharged from the chemical liquid nozzle 7.
The liquid is discharged onto the substrate 4 from the nozzles a, 7b and the table center nozzle 10. The circulating thinner discharged onto the substrate 4 spreads radially with respect to the substrate 4 and reacts with the resist on the substrate 4 in the same manner as described above. Thereafter, the circulating thinner having completed the reaction with the resist is radially removed from the substrate 4 and flows down to the bottom of the cup 11. The circulation thinner that has flowed down to the bottom of the cup 11 is collected in the circulation tank 2 through the collection line 14. Here, the total amount of the circulating thinner discharged from the chemical liquid nozzles 7a and 7b and the table center nozzle 10 is, for example, 2 l (2000 cc).

After the discharge of the circulating thinner from the chemical liquid nozzles 7a and 7b and the table center nozzle 10, the rotation speed of the in-cup rotary table 12 and the substrate 4 is reduced to 60 r.
The pump 6 is operated while keeping the pressure at pm. As a result, the thinner (hereinafter, unused thinner) stored in the new liquid tank 1 and never used in the step of removing the resist pattern (hereinafter, unused thinner) is supplied to the chemical discharge section 7 through the chemical liquid line 5 and the chemical liquid line 5a. Chemical liquid nozzle 7a,
7b, and is discharged from the table center nozzle 10 through the chemical line 5 and the chemical line 5b. Here, the amount of unused thinner discharged from the chemical liquid nozzles 7a and 7b and the table center nozzle 10 is substantially the same as the amount of discarded circulating thinner, and is, for example, 100 cc in total.

After the discharge of the unused thinner is completed, the substrate 4 is rotated at the same rotational speed by increasing the rotational speed of the in-cup rotating table 12 to, for example, 800 rpm, and this state is maintained for, for example, about 20 seconds. . At this time,
The centrifugal force acts on the unused thinner attached to the substrate 4,
Unused thinner is removed from the substrate 4. Thus, the substrate 4 is dried. The unused thinner removed from the substrate 4 flows down to the bottom surface of the cup 11 and is collected in the circulation tank 2 through the collection line 14. The collected unused thinner is used as a circulating thinner in a later step of removing a resist pattern on another substrate.

Thereafter, the substrate 4 is carried out of the wet processing apparatus by a predetermined carry-out device (not shown), and the step of removing the resist pattern on the substrate 4 is completed.

In the step of stripping the resist pattern on the substrate 4 described above, the processing time per substrate 4 is about 90 seconds, and the amount of unused thinner is 100 c.
c. On the other hand, for example, using a conventional flat-flow wet processing apparatus having a standard configuration having two tanks, such as a tank for immersing the substrate in a chemical solution and a tank for discharging the chemical solution in a shower form on the substrate, When stripping the upper resist pattern, the capacity of the tanks storing the thinner in the two tanks is 200 l in total. Here, in this conventional flat-flow wet processing apparatus, even after assuming that the thinner attached to the substrate is completely removed and transferred to another processing tank after the resist pattern is stripped off, That is, even if it is assumed that the take-out of the thinner from the second tank of the two tanks to the tank for performing another process is 0 cc, the thinner stored in the tank can be used to remove the resist pattern over 2000 substrates. Unless the replacement frequency is set such that the replacement is performed every time, the usage amount of the thinner per substrate becomes larger than the usage amount (100 cc) of the thinner according to the first embodiment. However, as described above, when the thinner is to be replaced every time the 2,000 substrates are processed, the thinner used for removing the resist pattern on those substrates over 2,000 substrates has a solid content of the resist. Since the resist pattern is contained in a large amount, stains, residues, and the like remain on the substrate from which the resist pattern has been removed, and the quality of the substrate is impaired. Therefore, in the conventional flat-flow wet processing apparatus, the thinner is not replaced every time 2,000 substrates are processed, but is actually performed with a smaller number of substrates. Therefore, the amount of thinner used per substrate in the wet processing apparatus according to the first embodiment is smaller than the amount of thinner used per substrate in the conventional flat-flow wet processing apparatus. Further, the capacity of the tank of the conventional flat-flow wet processing apparatus is 2.
00l, the capacity of the new liquid tank 1 of the wet processing apparatus according to the first embodiment is 40l,
Is 60 liters, and even if these are combined, the capacity of the tank can be significantly reduced.

As described above, according to the first embodiment, the circulating thinner is discharged onto the substrate 4 to peel off the resist pattern on the substrate 4, and the first resist pattern is used for peeling. By discarding the circulating thinner and finally discharging almost the same amount of unused thinner as the discarded circulating thinner to finish the resist pattern stripping, the amount of thinner used can be reduced The amount of unused thinner discharged to the circulating fluid, that is, only the amount of circulating thinner discarded can be used. Therefore, the amount of thinner used for stripping the resist pattern can be reduced, and the amount of thinner to be stored can be reduced. In the step of stripping the resist pattern, the thinner having the highest resist content is discarded, and the thinner having the lowest resist content is collected, circulated and reused.
The deterioration of the quality of the thinner in the inside can be minimized, and the thinner can be maintained in a high quality state for a long time, so that the frequency of replacement of the stored thinner is significantly reduced as compared with the conventional case. be able to. Also, the substrate 4
By rotating at a high rotational speed, the thinner attached to the substrate 4 can be almost completely removed, so that there is no need to provide a separate tank for replacement with pure water.
The occupied area of the wet processing apparatus can be minimized.

Next, a wet processing apparatus according to a second embodiment of the present invention will be described. FIG. 2 shows a wet processing apparatus according to the second embodiment.

As shown in FIG. 2, the wet processing apparatus according to the second embodiment has a new liquid tank 1, a circulation tank 2 and a substrate processing section 3, as in the first embodiment. Here, the new liquid tank 1 and the circulation tank 2 are the same as those in the first embodiment, and the description is omitted.

The substrate processing section 3 of the wet processing apparatus according to the second embodiment is for performing wet processing on the substrate 4, and includes a cup 11, a rotary table 12 in the cup,
It comprises a chemical solution discharge section 7 and a pure water discharge section 21.

The cup 11 is for collecting or discarding the chemical solution discharged to the substrate 4 and removed from the substrate 4, and has a bottom surface having a high central portion and a lower peripheral portion than the central portion, that is, a so-called shape. It is formed in a mountain shape, and its side wall surface is composed of a cylindrical portion and a portion protruding inwardly at its upper portion in a brim shape. Further, a cylindrical side wall 11 a is further provided inside the cup 11, and the chemical liquid collecting section 22 is constituted by the cylindrical side wall 11 a and the side wall surface of the cup 11. The chemical liquid collecting section 22 is connected to a collecting line 23 at its bottom surface,
The chemical liquid collecting section 22 is connected to the circulation tank 2 through the collecting line 23. Further, a separation hole 22a is formed by the upper end of the portion protruding inward on the side wall surface of the cup 11 and the upper end of the side wall 11a. The cup 11 is connected to the waste liquid line 24 at a peripheral portion of the bottom surface inside the wall surface 11a. The cup 11 is configured so as to be movable up and down as a whole, and the dotted line indicates the position of the cup 11 when the cup 11 is lowered.

The in-cup rotating table 12 is provided such that its central axis is located at the center of the cup 11. The upper part of the in-cup rotary table 12 is capable of holding a substrate. Further, the in-cup rotating table 12 can rotate the substrate 4 about the normal direction of the center of the surface thereof as an axis.

A pure water line 25a is connected to the inside of the central axis of the in-cup rotating table 12, and a table central pure water nozzle 26 is provided at one end of the pure water line 25a above the central axis. . The pure water line 25a is one of the branches of a pure water line 25 described later. Above the in-cup rotary table 12, the chemical solution discharge section 7 is provided at a position, for example, at a height of 15 cm from the upper surface of the substrate 4 when the substrate 4 is placed on the in-cup rotary table 12. The chemical solution discharge section 7 is, for example, 5 ° to 1 °.
Chemical supply bar 27 rotatable within a range of 0 °
It is provided in. Chemical liquid nozzle 7 in chemical liquid discharge section 7
a is provided near one end of the chemical solution supply bar 27,
By rotating the chemical solution supply bar 27 by a required angle, the chemical solution nozzle 7a can be positioned substantially above the central axis of the in-cup rotating table 12, that is, substantially above the center of the substrate 4. The chemical liquid nozzles 7b and 7c are provided at positions of, for example, 12 cm and 27 cm from the chemical liquid nozzle 7a along the chemical liquid supply bar 27, respectively.

The chemical supply bar 27 is connected to the chemical line 5,
8 is connected. That is, the chemical solution supply bar 27
It is connected to the new liquid tank 1 through the chemical liquid line 5 and connected to the circulation tank 2 through the chemical liquid line 8 connected to the chemical liquid line 5. Here, pumps 6 and 9 similar to those in the first embodiment are provided in the chemical liquid lines 5 and 8, respectively.

Above the in-cup rotary table 12, a pure water discharge section 21 is further provided. The pure water discharge section 21 is for discharging pure water for rinsing to the substrate 4, and is connected to a pure water line 25b. In addition,
The pure water line 25b is one branch of the pure water line 25, and the other line is the pure water line 25a described above.
The pure water lines 25a and 25b are connected to a pure water supply device (not shown) through the pure water line 25, for example.

The pure water nozzle 21a is connected to the pure water line 25.
b, and is provided near one end of the pure water nozzle 21b,
Reference numerals 21c are provided at, for example, 12 cm and 27 cm along the pure water supply line 25b from the pure water nozzle 21a.

Next, a process of peeling a resist pattern on a substrate using the wet processing apparatus according to the second embodiment configured as described above will be described.

First, as in the first embodiment, the substrate 4
After forming a resist pattern thereon, the substrate 4 is placed on the in-cup rotating table 12. At this time, the cup 11 has been moved upward, so that the height of the lower end of the separation hole 22 a of the chemical solution recovery unit 22 is higher than the height of the surface of the substrate 4. Next, the substrate 4 is rotated by rotating the in-cup rotating table 12 about its central axis. Here, the rotation speed of the in-cup rotation table 12 and the substrate 4 is, for example, 60 rpm. After the rotation of the in-cup turntable 12 and the substrate 4 is stabilized, the pump 9 is operated to remove the organic alkali-based stripping liquid or the like used at least once in the step of stripping the resist pattern from the circulation tank 2. A liquid (hereinafter referred to as a circulating stripping liquid) is supplied to the chemical discharge section 7 through the chemical liquid line 8 and the chemical supply bar 27, and discharged from the chemical nozzles 7a, 7b, 7c. Here, the amount of the circulating peeling liquid discharged from the chemical liquid nozzles 7a, 7b, 7c is, for example, 200 cc in total. Centrifugal force due to the rotation of the substrate 4 acts on the circulating stripping liquid discharged to the substrate 4, and the circulating stripping liquid spreads radially on the substrate 4. Then, the radially spread circulating stripping solution reacts with the resist on the substrate 4. Thereafter, the circulating stripping solution containing the resist is radially removed from the substrate 4,
It flows down along the inner wall surface of the side wall 11a, and the waste liquid line 24
Disposed of through At this time, the resist pattern on the substrate 4 is almost peeled off.

Next, the cup 11 is lowered and the separation hole 22
The height at the center of “a” and the height of the upper surface of the substrate 4 are made substantially the same. Thereafter, by operating the pump 9 again, the circulating peeling liquid is supplied from the circulation tank 2 to the chemical liquid discharge section 7 through the chemical liquid line 8 and the chemical liquid supply bar 27, and is discharged from the chemical liquid nozzles 7a, 7b, 7c. The discharge of the circulating stripping solution from the chemical solution nozzles 7a, 7b, 7c is, for example, 9
Perform for 0 seconds. At this time, a centrifugal force due to the rotation of the substrate 4 acts on the circulating stripping liquid on the substrate 4, and the circulating stripping liquid is radially removed from the substrate 4. Of the removed circulating stripping liquid, 95% or more thereof is recovered by the chemical recovery unit 22 through the separation hole 22a, flows down to the bottom surface thereof, and is recovered by the recovery line 23.
Through to the circulation tank 2.

After the discharge of the circulating stripping solution is completed,
By operating the pump 6, a stripper that has never been used in the step of stripping the resist pattern (hereinafter, an unused stripper) is discharged from the new liquid tank 1 through the chemical line 5 and the chemical supply bar 27 to the chemical discharge unit. And discharged from the chemical liquid nozzles 7a, 7b, 7c. Here, the amount of the unused stripping solution discharged from the chemical solution nozzles 7a, 7b, 7c is substantially equal to the amount of the discarded circulating stripping solution, and is, for example, 200 cc in total. A centrifugal force due to the rotation of the substrate 4 acts on the unused stripper discharged to the substrate 4, and the unused stripper radially spreads on the substrate 4. With this unused stripping solution, a finishing process for stripping the resist pattern is performed on the substrate 4. Thereafter, the unused stripper is radially removed from the substrate 4, enters the chemical solution recovery unit 22 through the separation hole 22 a, is supplied to the circulation tank 2 through the recovery line 23, and is recovered. The collected unused stripping solution is reused as a circulating stripping solution in stripping a resist pattern on another substrate.

Next, the number of rotations of the rotary table 12 in the cup is increased to, for example, 500 rpm, whereby the substrate 4 is rotated.
Are rotated at the same rotation speed. As a result, the unused stripper remaining on the substrate 4 is almost completely removed. At the same time, the cup 11 is raised by a predetermined height to be in an initial state (a state shown by a solid line in FIG. 2).

Next, the rotational speed of the rotary table 12 in the cup is returned to, for example, 60 rpm, and the substrate 4 is set to the same rotational speed. Then, the pure water nozzles 21a, 21b, 21c and the table central pure water nozzle 26 The substrate 4 is rinsed with pure water by discharging pure water to both sides. The discharge of pure water from the pure water nozzles 21a, 21b, 21c and the table central pure water nozzle 26 is performed, for example, for about 90 seconds.

Next, the number of rotations of the rotary table 12 in the cup is increased to, for example, 1000 rpm, so that the substrate 4 is rotated.
Is rotated at the same rotation speed, and this state is maintained for about 20 seconds. Thereby, the drying process of the substrate 4 is performed. Thereafter, the in-cup rotating table 12 is stopped, and the substrate 4 is stopped.

Thereafter, the substrate 4 is carried out of the wet processing apparatus by a predetermined carry-out device (not shown), and the step of removing the resist pattern on the substrate 4 is completed.

The amount of the unused stripping solution used in stripping the resist pattern on the substrate 4 using the wet processing apparatus according to the second embodiment is almost the same as the amount of the discarded circulating stripping solution. 4 is about 200 cc per sheet.
On the other hand, in a conventional flat-flow wet processing apparatus having a standard configuration having two tanks for performing a resist pattern stripping process, a tank in which a stripping solution is stored has a total volume of 300 l, and further, Since about 200 cc of the stripping liquid is taken out from the second tank for performing the resist pattern stripping process to the tank for performing another process, the tank is removed every time the resist pattern on the 2,000 substrates is stripped. Even if it is assumed that the stripping solution is replaced, the usage amount of the stripping solution is 350 cc per substrate, and the usage amount (200 cc) of the stripping solution per substrate 4 in the wet processing apparatus according to the second embodiment. is more than. That is, when the resist pattern on the substrate 4 is stripped by using the wet processing apparatus according to the second embodiment, the resist pattern on the substrate is stripped by using the conventional flat-flow wet processing apparatus. The use amount of the stripping solution can be reduced.

As described above, according to the second embodiment, the circulating stripper first discharged onto the substrate 4 is
The same effect as in the first embodiment can be obtained because the resist pattern on the substrate 4 is stripped by removing the unused stripper after the substrate is removed from the substrate 4 and finally discharging the unused stripper onto the substrate 4. Can be. In addition, the wet processing apparatus according to the second embodiment is configured so that the resist pattern on the substrate 4 can be peeled off and the pure water rinse can be performed in the same cup 11, so that the pure water rinse is performed. Since there is no need to provide a separate tank, the area occupied by the wet processing apparatus can be reduced, and the cost for a clean room can be reduced.

Next, a wet processing apparatus according to a third embodiment of the present invention will be described. FIG. 3 shows a wet processing apparatus according to the third embodiment.

As shown in FIG. 3, the wet processing apparatus according to the third embodiment has a new liquid tank 1, a circulation tank 2 and a substrate processing section 3 as in the first embodiment. Here, the new liquid tank 1 and the circulation tank 2 are the same as those in the first embodiment, and the description is omitted.

The substrate processing section 3 of the wet processing apparatus according to the third embodiment is for performing wet processing on the substrate 4, and includes a cup 11, a rotary table 12 in the cup,
It comprises a chemical solution discharge section 7 and a pure water discharge section 21.

The cup 11 is for collecting or discarding a chemical solution discharged to the substrate 4 and removed from the substrate 4, and has a bottom surface having a high central portion and a lower peripheral portion than the central portion, that is, a so-called mountain. The side wall surface is formed of a cylindrical part and a part protruding inward at the upper part thereof. Further, a waste liquid / collection line 31 is provided at a peripheral portion on the bottom surface of the cup 11.
Is connected. The waste liquid / recovery line 31 is branched on the way. This branched waste liquid / collection line 31
Among them, one recovery line 32 is connected to the circulation tank 2, and the other waste liquid line 33 is connected via a separation valve 34.
It is connected to a predetermined waste liquid treatment device (not shown). Other configurations of the wet processing apparatus according to the third embodiment are the same as those of the second embodiment, and a description thereof will be omitted.

Next, a description will be given of a process of removing a natural oxide film using the wet processing apparatus according to the third embodiment configured as described above.

First, a silicon oxide (SiO ₂ ) film and an amorphous silicon (amorphous S) are formed on a substrate 4 similar to that of the first embodiment by, for example, a plasma enhanced chemical vapor deposition method.
i, a-Si) films (both not shown) are sequentially formed. The thicknesses of these SiO ₂ film and a-Si film are, for example, 500 nm and 40 nm, respectively. afterwards,
The substrate 4 is left in the air for one day. by this,
A natural oxide film is formed on the surface of the a-Si film.

Next, as shown in FIG.
It is mounted on the rotary table 12 in the cup of the wet processing apparatus. Next, the rotation table 12 is rotated around its central axis at a rotation speed of, for example, 60 rpm, thereby rotating the substrate 4 at the same rotation speed and opening the separation valve 34 provided in the waste liquid line 33. . After the rotation of the in-cup rotary table 12 and the substrate 4 is stabilized, the pump 9 of the chemical liquid line 8 is operated. Thereby, for example, 5% concentration of diluted hydrofluoric acid (HF) used at least once in the process of removing the natural oxide film in the circulation tank 2
The liquid (hereinafter, circulating HF liquid) is supplied to the chemical discharge section 7 sequentially through the chemical line 8 and the chemical supply bar 27, and is discharged from the chemical nozzles 7a, 7b, 7c. The discharge of the circulating HF liquid is performed, for example, for about 5 seconds. Centrifugal force due to the rotation of the substrate 4 acts on the circulating HF liquid discharged onto the substrate 4,
The circulating HF liquid spreads radially on the substrate 4. As a result, the natural oxide film formed on the surface of the a-Si film above the substrate 4 is removed. In addition, the circulation H from which the natural oxide film is removed
The F liquid is radially removed from the substrate 4. Thereafter, the circulating HF liquid enters a recovery / waste liquid line 31 connected to the bottom surface of the peripheral portion of the cup 11 and is discarded through a waste liquid line 33. After the disposal of the circulating HF liquid is completed, the separation valve 34 of the waste liquid line 33 is closed.

Next, by operating the pump 9,
In the same manner as described above, the circulating HF liquid is discharged onto the substrate 4 from the chemical liquid nozzles 7a, 7b, 7c. The discharge of the circulating HF liquid is performed for about 15 seconds. Centrifugal force due to the rotation of the substrate 4 acts on the circulating HF liquid on the substrate 4 to radially spread on the substrate 4 and remove the natural oxide film remaining on the a-Si film surface. Further, the circulating HF liquid is radially removed from the substrate 4, flows down to the bottom surface along the side wall surface of the cup 11, and is returned to the circulation tank 2 through the collection / waste liquid line 31 and the collection line 32.

Next, by operating the pump 6 of the chemical solution line 5, the HF solution that has not been used in the process of removing the natural oxide film in the new solution tank 1 (hereinafter, unused HF solution).
The F solution) is discharged from the chemical solution nozzles 7a, 7b, 7c to the substrate 4 through the chemical solution line 5 and the chemical solution supply bar 27. The discharge of the unused HF liquid is performed for about 5 seconds, and the total amount of the unused HF liquid discharged from the chemical liquid nozzles 7a, 7b, 7c is, for example, about 150 cc. The centrifugal force due to the rotation of the substrate 4 acts on the unused HF liquid discharged onto the substrate 4, and the unused HF liquid spreads radially on the substrate 4. Thus, the finishing process in the process of removing the natural oxide film is performed. Unused HF liquid is radially removed from the substrate 4, flows down to the bottom of the cup 11, is supplied to the circulation tank 2 through the collection / waste liquid line 31 and the collection line 32, and is collected. The collected unused HF solution is reused as a circulating HF solution in a process of removing a natural oxide film on another substrate.

Next, after opening the separation valve 34 provided in the waste liquid line 33, pure water is supplied to the pure water discharge section 21 through the pure water line 25b in the same manner as in the second embodiment. The water is discharged from the water nozzles 21a, 21b, and 21c, and is discharged from the table center pure water nozzle 26 through the pure water line 25a. Thereby, pure water rinsing of both surfaces of the substrate 4 is performed. This pure water rinsing is performed for about 60 seconds. Further, centrifugal force due to the rotation of the substrate 4 acts on the pure water discharged to both surfaces of the substrate 4, and the pure water spreads radially on the substrate 4 and is removed. The pure water removed from the substrate 4 flows down to the bottom of the cup 11 and is discarded through the collection / waste liquid line 31 and the waste liquid line 33.

Next, the substrate 4 is rotated at the same rotation speed by increasing the rotation speed of the in-cup rotary table 12 to, for example, 1000 rpm, and this state is maintained for about 20 seconds. Thereafter, the in-cup rotating table 12 and the substrate 4 are stopped. Thereby, the drying process of the substrate 4 is performed.

Thereafter, the substrate 4 is carried out of the wet processing apparatus by a predetermined carry-out device (not shown), and the step of removing the natural oxide film on the surface of the a-Si film is completed.

As described above, according to the third embodiment, the circulating HF liquid discharged first is removed from the substrate 4, discarded, and finally the unused HF liquid is discharged onto the substrate 4. By performing the finishing process in the process of removing the natural oxide film, collecting and circulating the unused HF solution, and reusing it as a circulating HF solution,
After removing the natural oxide film formed on the a-Si film on the substrate 4 in the cup 11, the same cup 11 is further removed.
Of natural oxide film on a-Si film surface and substrate 4
2nd rinsing with pure water
The same effect as that of the embodiment can be obtained. Also, a
-Since the HF liquid discharged last on the Si film surface has never been used for removing the natural oxide film,
The surface of the a-Si film can be a clean surface free of impurities.

Although the embodiments of the present invention have been specifically described above, the present invention is not limited to the above-described embodiments, and various modifications based on the technical idea of the present invention are possible.

For example, the numerical values, materials, and means for separating the circulated chemical liquid from the chemical liquid to be discarded in the above embodiment are merely examples, and different numerical values, materials, and means may be used as necessary. May be used.

Further, for example, in the above-described third embodiment, the natural oxide film on the surface of the a-Si film above the substrate 4 is removed by using HF. Etching may be performed. For example, aluminum may be etched by a mixed solution of phosphoric acid, acetic acid, and nitric acid.

Further, for example, in the third embodiment, the separation valve 34 is provided in the waste liquid line 33, but the separation valve 34 may be provided in the recovery line 32. Further, a separation valve may be provided in each of the waste liquid line 33 and the recovery line 32. When the separation valve is provided in the recovery line 32 and / or the waste liquid line 33, the separation valve is configured to be able to open and close in a timely manner according to the discharge and recovery of the chemical solution.

Further, for example, in the above-described first to third embodiments, a glass substrate is used as the substrate 4, but for example, a liquid crystal substrate or a printed substrate may be used.

[0090]

As described above, according to the first aspect of the present invention, after the first chemical used at least once in the wet processing is discharged onto the substrate, at least lastly, the wet processing is performed. By discharging the unused second chemical solution to the substrate, the amount of the chemical solution used in the wet processing can be reduced, and it can be minimized.

According to the second aspect of the present invention, after the chemical used at least once in the wet processing is discharged to the substrate and the first chemical is removed from the substrate, and at least finally, the substrate is subjected to the wet processing. Is configured to discharge the second chemical solution that has never been used in a single room, so that the amount of the chemical solution used can be minimized and the occupied area can be minimized, and the clean room Thus, it is possible to obtain a wet processing apparatus capable of reducing the cost of the apparatus.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a wet processing apparatus according to a first embodiment of the present invention.

FIG. 2 is a sectional view showing a wet processing apparatus according to a second embodiment of the present invention.

FIG. 3 is a sectional view showing a wet processing apparatus according to a third embodiment of the present invention.

FIG. 4 is a cross-sectional view showing a flat-flow wet processing apparatus according to the related art.

[Explanation of symbols]

1 ... New liquid tank, 2 ... Circulating liquid tank, 3 ...
Wet processing unit, 4 ... substrate, 7 ... chemical solution discharge unit, 7
a, 7b, 7c: chemical liquid nozzle, 11: cup,
11a ... side wall, 12 ... rotating table in cup,
16 ・ ・ ・ Separation shutter

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[Procedure amendment]

[Submission date] June 23, 1999

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Name of invention

[Correction method] Change

[Correction contents]

Title: Rotary wet processing method and rotary wet processing apparatus

[Procedure amendment 2]

[Document name to be amended] Statement

[Correction target item name] Claims

[Correction method] Change

[Correction contents]

[Claims]

[Procedure amendment 3]

[Document name to be amended] Statement

[Correction target item name] 0001

[Correction method] Change

[Correction contents]

[0001]

TECHNICAL FIELD The present invention relates to a rotary wet treatment method and the rotary wet-processing apparatus, in particular, the substrate times
The method is suitable for application to wet processing in which a chemical solution is discharged onto a substrate while being rotated.

[Procedure amendment 4]

[Document name to be amended] Statement

[Correction target item name] 0013

[Correction method] Change

[Correction contents]

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a rotary wet processing method capable of reducing the amount of a chemical solution used for wet processing and minimizing the amount used.

[Procedure amendment 5]

[Document name to be amended] Statement

[Correction target item name] 0014

[Correction method] Change

[Correction contents]

Another object of the present invention is to minimize the amount of the chemical solution used, to minimize the occupied area, and to reduce the cost of a clean room and the like. An object of the present invention is to provide a rotary wet processing apparatus.

[Procedure amendment 6]

[Document name to be amended] Statement

[Correction target item name] 0015

[Correction method] Change

[Correction contents]

[0015]

According to a first aspect of the present invention, there is provided a rotary wet processing method for performing a wet process by discharging a chemical solution onto a substrate.
At least initially, performs wet process by ejecting first chemical agent at least once used in the wet process on a substrate, then
Then, after removing the first chemical from the substrate, the first chemical is discarded.
A first step in which the substrate is discarded, and a first chemical solution discharged onto the substrate.
Out and perform wet processing, then the first chemical solution from the substrate
After the removal, the second step is to collect the first chemical solution.
And extent, at least in the end, the second chemical liquid is not used even once in a wet process, it has rows wet process by ejecting the substrate,
Next, after removing the second chemical from the substrate, the second chemical is removed.
And a third step of recovering the wastewater .

[Procedure amendment 7]

[Document name to be amended] Statement

[Correction target item name] 0016

[Correction method] Change

[Correction contents]

[0016] The first invention smell Te, the good suitable, second
After the recovery of the drug solution, in order to clean the substrate, that discharges pure water to the substrate. Contact name disposal of pure water adhering to the substrate after the cleaning is preferably performed by a method similar to the disposal of the first chemical.

[Procedure amendment 8]

[Document name to be amended] Statement

[Correction target item name] 0017

[Correction method] Deleted

[Procedure amendment 9]

[Document name to be amended] Statement

[Correction target item name] 0022

[Correction method] Change

[Correction contents]

According to a second aspect of the present invention, there is provided a rotary wet processing apparatus having a chemical liquid discharging means for discharging a chemical liquid onto a substrate, wherein the chemical liquid discharging means discharges a chemical liquid onto the substrate to perform wet processing. Discharged to substrate by chemical liquid discharge means
Removing means for removing the chemical solution from the substrate;
Disposal means for discarding the chemical solution removed from the plate, and removal means
Liquid collecting means for collecting the liquid chemical removed from the substrate by the
At least first, the first chemical solution used at least once in the wet processing is discharged by the chemical liquid discharging means to perform the wet processing, and the first chemical liquid is removed from the substrate by the removing means.
After the first chemical solution is removed by the disposal means,
Wet processing by discharging the first chemical liquid onto the substrate by liquid discharging means
Was performed, and the first chemical solution was removed from the substrate by the removing means.
Thereafter, the first chemical liquid is collected by the chemical liquid collecting means, and finally, the second chemical liquid which has never been used in the wet processing is discharged to the substrate by the chemical liquid discharging means to perform the wet processing.
After removing the second chemical solution from the substrate by the removing means,
The liquid medicine collecting means is configured to collect the second chemical liquid .

[Procedure amendment 10]

[Document name to be amended] Statement

[Correction target item name] 0024

[Correction method] Change

[Correction contents]

[0024] Te The second invention smell, the good suitable removal means, by rotating the substrate, and is configured to remove the chemical from the substrate.

[Procedure amendment 11]

[Document name to be amended] Statement

[Correction target item name] 0025

[Correction method] Deleted

[Procedure amendment 12]

[Document name to be amended] Statement

[Correction target item name] 0027

[Correction method] Deleted

[Procedure amendment 13]

[Document name to be amended] Statement

[Correction target item name] 0032

[Correction method] Change

[Correction contents]

According to the first and second aspects of the present invention configured as described above, at least first, the first chemical solution used at least once in the wet processing is discharged onto the substrate to perform the wet processing. And then removing the first chemical from the substrate
After that, the first step of discarding the first chemical solution and the second step
The first chemical is discharged to perform wet processing, and then the first chemical is discharged.
After removing the liquid from the substrate, a second
A step, in at least the last, have line wet processing and discharging the second chemical liquid is not used even once in the wet process on a substrate,
Next, after removing the second chemical from the substrate, the second chemical is removed.
By and a third step of recovering, Tan
Maintain high quality chemicals stored in
Thus, a process using a clean chemical solution can be performed at the end of the wet process of the substrate, and the amount of the chemical solution used can be reduced.

[Procedure amendment 14]

[Document name to be amended] Statement

[Correction target item name] 0090

[Correction method] Change

[Correction contents]

[0090]

As described above, according to the rotary wet processing method according to the first aspect of the present invention, at least the
First, the first chemical liquid used at least once in the wet processing is discharged to the substrate to perform the wet processing, and then the first chemical liquid is used.
After removing the first chemical from the substrate, the first chemical liquid is discarded.
And the first chemical solution is discharged onto the substrate to perform wet processing.
Then, after removing the first chemical from the substrate, the first chemical is
A second step of recovering at least the end, humidity and discharging the second chemical liquid is not used even once in the wet process on a substrate
Formula treatment was performed and then the second chemical was removed from the substrate
And a third step of recovering the second chemical solution.
By doing so, it is possible to reduce the amount of the chemical solution used in the wet processing and to minimize it.

[Procedure amendment 15]

[Document name to be amended] Statement

[Correction target item name] 0091

[Correction method] Change

[Correction contents]

The rotary wet processing according to the second aspect of the present invention.
According to the treatment device , at least first,
Ri, first used at least once in a wet treatment chemical to perform wet processing by discharging the substrate, a first removal means
After removing the chemical from the substrate, the first chemical is removed by the disposal means.
Is discarded, and the first chemical is discharged onto the substrate by the chemical liquid discharging means.
The liquid is discharged to perform wet processing, and the first chemical is removed by the removing means.
After removing the liquid from the substrate, the first liquid
Collect the liquid, at least lastly, by the chemical liquid discharging means,
A second chemical liquid to wet processing is not used even once in the substrate
The wet processing is performed by discharging, and the second chemical solution is removed by the removing means.
After removal from the substrate, the second chemical solution is
A rotary type that can minimize the amount of chemical solution used and minimize the occupied area by reducing the cost of clean rooms etc. A wet processing apparatus can be obtained.

Continued on the front page (51) Int.Cl. ⁶ Identification code FI H01L 21/306 J

Claims (18)

[Claims] 1. A wet processing method in which a chemical is discharged onto a substrate to perform wet processing, wherein at least first, a first chemical used at least once in the wet processing is discharged onto the substrate. And finally performing a wet treatment by discharging a second chemical solution that has never been used in the wet treatment to the substrate. 2. The method according to claim 1, wherein the second chemical is discharged from the substrate after discharging the second chemical to the substrate and performing the wet processing.
The wet processing method described in the above. 3. The method according to claim 2, wherein after collecting the second chemical liquid, pure water is discharged to the substrate.
The wet processing method described in the above. 4. The method according to claim 1, wherein, of the first chemical liquid discharged to the substrate, at least first, the first chemical liquid discharged to the substrate is discarded after being removed from the substrate. The wet processing method according to claim 1, wherein 5. A first process, wherein the first chemical solution is discharged to the substrate to perform wet processing, and then the first chemical solution is removed from the substrate, and then the first chemical solution is discarded.
And a second process in which the first chemical solution is discharged to the substrate to perform wet processing, and then the first chemical solution is removed from the substrate, and then the first chemical solution is collected. 2. The method according to claim 1, further comprising the steps of: 6. The wet processing method according to claim 1, wherein the chemical solution discharged to the substrate is removed from the substrate by rotating the substrate. 7. The wet processing method according to claim 1, wherein the wet processing is performed by rotating the substrate and discharging the chemical solution onto the substrate. 8. The wet processing method according to claim 1, wherein the wet processing is performed in a single-wafer manner. 9. A wet processing apparatus having a chemical liquid discharging means for discharging a chemical liquid onto a substrate, wherein the chemical liquid discharging means discharges the chemical liquid onto the substrate to perform wet processing. The first chemical liquid used at least once in the wet processing is discharged to the substrate by the discharging means to perform the wet processing, and at least finally, the chemical liquid discharging means has not been used in the wet processing even once. A wet processing apparatus, wherein the wet processing is performed by discharging a second chemical solution onto the substrate. And a substrate rotating means for rotating said substrate, wherein said substrate rotating means rotates said substrate, and said chemical liquid discharging means discharges said chemical solution onto said substrate to perform said wet processing. The wet processing apparatus according to claim 9, wherein the apparatus is configured. 11. A removing means for removing the chemical liquid discharged onto the substrate by the chemical liquid discharging means from the substrate,
10. The wet processing apparatus according to claim 9, further comprising a chemical liquid collecting means for collecting the chemical liquid removed from the substrate by the removing means. 12. The wet processing apparatus according to claim 11, wherein said removing means is configured to remove said chemical solution from said substrate by rotating said substrate. 13. A removing means for removing the chemical liquid discharged onto the substrate by the chemical liquid discharging means from the substrate,
10. A disposal means for discarding the chemical solution removed from the substrate by the removal means.
The wet processing apparatus as described in the above. 14. The method according to claim 1, wherein, of the first chemical liquid discharged to the substrate by the chemical liquid discharging means, at least the first chemical liquid first discharged to the substrate is removed from the substrate, and then the discarding means is removed. 14. The wet processing apparatus according to claim 13, wherein the apparatus is configured to be discarded by: 15. A removing means for removing the chemical discharged from the substrate by the chemical discharging means from the substrate;
10. The method according to claim 9, further comprising: a disposal unit configured to discard the chemical solution removed from the substrate by the removing unit; and a chemical solution collection unit configured to collect the chemical solution removed from the substrate by the removing unit. Wet processing equipment. 16. A removing means for removing the chemical solution discharged onto the substrate by the chemical solution discharging means from the substrate,
10. The wet processing apparatus according to claim 9, further comprising a chemical solution circulating means for circulating the chemical solution removed from the substrate by the removing means to the chemical solution discharging means through a predetermined path. 17. The wet processing apparatus according to claim 9, further comprising pure water discharging means for discharging pure water to said substrate. 18. The wet processing apparatus according to claim 9, wherein the wet processing apparatus is a single-wafer processing apparatus.