JPH11297662A - Method and equipment for processing substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To avoid the remaining processing liquid in a space and thereby make the even dry-up of a substrate possible, by setting the relative speed of a supporting section to the liquid level at a first speed before the supporting section reaches the reference position set above the liquid level, and then setting it at a second speed after the supporting section reaches the reference position. SOLUTION: In a substrate transferring/loading process, a pressure reduced chamber 2 is purged by specified inert gas and pure water is continuously supplied. When a substrate guide 41 comes to a stationary state at the initial position (LEP), a CPU selects a first speed, preferably a low speed V1 which is 12 mm/sec or below and notifies the selected speed V1 to a motor driving circuit. After the substrate guide 41 is completely exposed to the atmosphere, the lowest end of the substrate guide 41 reaches a position away from the pure water level by a specified distance in the vertical direction. Then, the CPU selects a second speed, preferably, a rapid speed V2 which is 168 mm/sec or about and then notifies the speed V2 to the motor driving circuit.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing method and apparatus, and more particularly, to a silicon wafer, an FPD (Flat Flat) in a semiconductor device manufacturing process, a liquid crystal display manufacturing process, an electronic component-related manufacturing process and the like.
The present invention relates to a substrate processing method and apparatus for processing various substrates such as a substrate for Panel Display, a glass substrate for a photomask, and an electronic component.

[0002]

2. Description of the Related Art In the above-described substrate processing apparatus, a substrate is lowered into a predetermined processing liquid stored in a processing tank while the lower end of the substrate is supported by a supporting member, and the substrate is immersed in the processing liquid. Is known. After the substrate is immersed in the processing liquid for a predetermined time, the substrate processing apparatus dries the substrate by supplying dry vapor such as IPA (isopropyl alcohol) vapor to the processing liquid surface while lifting the substrate from the processing liquid. Also, instead of raising the substrate with respect to the processing liquid level as described above, the processing liquid is discharged from the lower part of the processing tank to lower the processing liquid level in the processing tank, A substrate processing apparatus that supplies a dry gas to a surface to dry a substrate is also known.

[0003]

However, according to the above substrate processing apparatus, the processing liquid remaining in the gap between the substrate after the drying processing and the supporting member is not sufficiently dried, and the processing liquid remains in the gap as it is. However, there arises a problem that the substrate cannot be dried uniformly. Further, even after the substrate having the processing liquid attached to such a gap is transported from the support member to the next step, the processing liquid is still attached to the support member. When a new substrate is placed on the support member to which the processing liquid has adhered and is lowered toward the processing liquid, the processing liquid attached to the support member scatters on the main surface of the substrate when the support member reaches the liquid surface. I do. as a result,
There is a problem that particles are generated at the locations where the processing liquid has scattered.

Accordingly, an object of the present invention is to provide a substrate processing method and apparatus capable of preventing a processing liquid from remaining in a gap and uniformly drying a substrate. Another object of the present invention is to provide a substrate processing method and apparatus capable of preventing a processing liquid attached to a support member from scattering on a substrate and preventing particles from being generated on the substrate.

[0005]

Means for Solving the Problems and Effects of the Invention The first invention is a method of immersing a substrate in a processing liquid while supporting the substrate by a support, and treating the substrate with the processing liquid. When the substrate is moved up and down relative to the liquid surface of the processing liquid supplied to immerse the substrate in the processing liquid, the support portion is placed at a predetermined position above by a predetermined distance from the liquid surface. Before reaching, the relative speed between the support and the liquid surface is set to a first speed, and when the support reaches the reference position, the relative speed is changed to a second speed different from the first speed. Set. If the relative movement of the support portion and the processing tank is performed at a constant high speed, the processing liquid tends to remain on the portion of the support portion that actually supports the substrate, or the processing liquid that has previously remained in the processing portion may be removed from the substrate. Or scatter on the surface. Therefore, according to the first invention, two types of relative speeds are prepared, and the first and second speeds different from each other are selectively used based on the reference position. Therefore, the processing liquid that is to remain on the supporting portion can be taken into the stored processing liquid by the action of the surface tension.
Therefore, it is difficult for the processing liquid to remain on this support portion,
The possibility that particles will adhere can be reduced. Further, since the processing liquid hardly remains on the supporting portion, the possibility that the processing liquid scatters on the substrate surface is naturally reduced. Thus, the substrate processing apparatus can process a substrate with high quality.

According to a second aspect of the present invention, in the first aspect, the first speed is lower than the second speed when the supporting portion rises relatively from the processing solution to the liquid level. Second
According to the invention, since the relative speed is reduced immediately before the supporting portion is exposed from the processing liquid, the processing liquid hardly remains on the supporting portion.

According to a third aspect of the present invention, in the first or second aspect, the second speed is lower than the first speed when the support portion is relatively lowered from a position higher than the reference to the liquid surface. It is characterized by. According to the third aspect, since the relative speed is reduced immediately before the support unit lands on the processing liquid, the possibility that the processing liquid is scattered on the substrate surface is naturally reduced.

According to a fourth invention, a substrate is immersed in a processing solution,
An apparatus for processing the substrate with the processing liquid, wherein the supporting part supports the substrate, and raises and lowers the supporting part relatively to a liquid surface of the processing liquid in order to immerse the substrate in the processing liquid. Unit, a detection unit that detects the positional relationship between the liquid level and the support unit that is relatively raised and lowered by the lifting unit, and is set in advance a predetermined distance above the liquid surface based on the positional relationship detected by the detection unit. Before the support reaches the reference position, the relative speed between the support and the liquid surface is controlled to a first speed, and when the support reaches the reference, the first speed is set. A control unit that controls the relative speed to a second speed different from the speed. According to the fourth aspect, similarly to the first aspect, the processing liquid hardly remains on the supporting portion, and the possibility that particles are attached can be reduced. Further, since the processing liquid hardly remains on the supporting portion, the possibility that the processing liquid scatters on the substrate surface is naturally reduced.

In a fifth aspect based on the fourth aspect, the control section controls the first speed to be lower than the second speed when the supporting portion rises relatively from the processing solution to the liquid level. It is characterized by the following. According to the fifth aspect, similarly to the second aspect, the treatment liquid hardly remains on the support portion.

In a sixth aspect based on the fourth or fifth aspect, when the support section relatively descends from the position higher than the reference to the liquid surface, the control section sets the second speed to the first speed. It is characterized in that it is controlled to be smaller than this. According to the sixth aspect, similarly to the third aspect, the possibility that the treatment liquid scatters on the substrate surface is naturally reduced.

[0011] A seventh invention is a method for drying a substrate by supporting a substrate by a supporting portion, immersing the substrate in a processing liquid, and then supplying dry steam near a liquid surface of the processing liquid,
In order to dry the substrate with the supplied drying steam, in a case where the supporting portion rises relatively from the processing liquid with respect to the liquid surface while supporting the substrate, it is preset at a predetermined distance above the liquid surface. Before the support reaches the reference position, the relative speed between the support and the liquid surface is set to the first speed. When the support reaches the reference position, the relative speed is set to the second speed. And the first speed is smaller than the second speed.

According to an eighth aspect of the present invention, there is provided an apparatus for drying a substrate by immersing the substrate in a processing liquid and then supplying dry steam near a liquid surface of the processing liquid to dry the substrate. The support part supporting the substrate and the support part supporting the substrate,
An ascending part that rises relatively to the liquid surface of the processing liquid, and dry steam supplied from the outside while the support part rises relatively from the processing liquid to the liquid surface by the rising part. A supply unit that supplies liquid to the vicinity of the liquid surface, a detection unit that detects a positional relationship between the support unit and the liquid surface that are relatively raised by the rising unit, and a positional relationship detected by the detection unit. Before the support reaches the reference position set in advance by a certain distance, the relative speed between the support and the liquid surface is controlled to the first speed, and the support reaches the reference. And a control unit for controlling the relative speed to the second speed when the first speed is set, wherein the first speed is smaller than the second speed.

According to the seventh and eighth aspects, similarly to the first aspect, the processing liquid hardly remains on the supporting portion, and the possibility of particles adhering can be reduced.
Further, since the processing liquid hardly remains on the supporting portion, the possibility that the processing liquid scatters on the substrate surface is naturally reduced. Thus, the present substrate processing apparatus can process a substrate with high quality.

[0014]

FIG. 1 is a sectional view showing the structure of a substrate processing apparatus according to a first embodiment of the present invention. FIG.
FIG. 2 is a cross-sectional view of a cross section along the direction of arrow A in the substrate processing apparatus shown in FIG. The substrate processing apparatus shown in FIGS. 1 and 2 includes a processing bath 1 and a decompression chamber 2 including a casing 21 and a shutter 22.

The casing 21 is formed in a box shape whose upper end is open. On its inner surface is a processing tank 1
Mounting member 24 for completely and fixedly storing
Is fixed. Further, near the upper end of the processing tank 1 on this inner surface, two introduction pipes 25 for introducing the above-mentioned IPA vapor or the like are attached. The introduction pipe 25 extends in parallel with the bottom surface of the casing 21 and along the inner side surface thereof.
1, and is connected to a supply source (not shown) of IPA vapor or the like. At a predetermined position of the introduction pipe 25, a plurality of discharge ports 25a for discharging the supplied IPA vapor or the like to the upper end of the processing tank 1 are formed. Shutter 22
Functions as a lid that can be opened and closed, and can maintain an airtight state in the decompression chamber 2 when closed.

The processing tank 1 housed in the casing 21 will be described. FIG. 3 is a partially cutaway perspective view showing the configuration of the processing tank 1. The shape of the processing tank 1 is defined by an outer plate 101, and its upper end is a substantially rectangular parallelepiped that is open.
Also, the receiving plate 1 surrounds the upper outer periphery of the processing tank 1.
03 is provided. The receiving plate 103 forms an overflow groove 104 for receiving the liquid overflowing from the processing tank 1 in cooperation with the upper peripheral edge of the outer plate 101. A hole is formed near the front end of the processing tank 1 and at the bottom of the receiving plate 103, and one end of the overflow drain pipe 105 (see FIG. 3) is connected to the hole. The other end of the overflow drain 105 is
Although not shown, the liquid penetrating through the side surface of the casing 21 and being guided to the outside is discharged to the outside of the decompression chamber 2 through the overflow drain pipe 105. .

An upflow pipe 106 is provided near the front end of the processing tank 1 and below the overflow drainage pipe 105. Although not shown, one end of the upflow pipe 106 is guided to the outside through the side wall of the casing 21 and connected to a supply source (not shown) of pure water and a chemical solution. The other end of the upflow pipe 106 is connected to two injection pipes 107 provided on both left and right sides of the processing tank 1. These injection pipes 107 extend along both outer side surfaces of the processing tank 1, and form the outer plate 1 forming the bottom portion and the left and right sides of the processing tank 1.
10 (see FIG. 1 for details). On the outer periphery of the injection pipe 107, along the axial direction thereof,
A plurality of holes 107a are formed inward at predetermined intervals. The left and right injection pipes 107 are terminated near the rear end of the processing tank 1.

The injection tube 1 is located on the left and right sides of the outer plate 101.
An in-tank drain pipe 109 is provided diagonally above 07.
One end of the in-tank drain pipe 109 is connected to a hole 110 formed on the left and right sides of the outer plate 101. The left and right in-tank drain pipes 109 are integrated in the vicinity of the front end of the processing tank 1, and the other end is guided to the outside through the side surface of the main body 21 of the decompression chamber 2. As a result, the liquid in the processing tank is discharged to the outside through the tank drain pipe 109.

In the processing tank 1, a pair of left and right substrate supporting portions 1 is provided.
11 are in parallel. Both ends of the substrate support 111 are fixed to two opposing inner surfaces of the processing bath 1. A plurality of grooves are formed at predetermined intervals in each of the substrate support portions 111. The substrates W are positioned and supported in the processing bath 1 by inserting the substrates W into the grooves. Thus,
In the processing tank 1, a predetermined number of substrates W are arranged in parallel with each other at intervals. Further, both ends of the substrate support 111 are fixed to positions on the two inner surfaces where the supported substrates W are reliably immersed in the processing liquid (chemical solution and cleaning liquid).

Further, an elevating device 4 is provided in connection with the processing tank 1 as described above. The lifting device 4 includes a substrate guide 41, a shaft 42 having a fin 421 fixed to a lower end thereof, a connecting plate 43, a timing belt 44,
A servo motor 45 and first to third sensors 46 to 48 are provided. The substrate guide 41 has a plurality of grooves formed at the same pitch as the grooves formed in the substrate support portion 111, and the substrate W is supported by inserting the substrate W into the grooves. The board guide 41 is fixedly attached to an upper end portion of the shaft 42 via a connection plate 43. The shaft 42 extends in the vertical direction,
It penetrates the bottom of the casing 21 so as to maintain the airtightness of the decompression chamber 2. The lower end of the shaft 42 is the timing belt 4
4 is fixed. The servo motor 45 generates a driving force such that the shaft 42 fixed to the timing belt 44 moves in a vertical direction and within a predetermined movable range. With this driving force, the board guide 41 also moves up and down in the vertical direction within the same movable range. Here, the lower limit position at which the substrate guide 41 can move up and down is defined as
As shown in FIGS. 1 and 2, the upper limit position is referred to as UEP. In addition, an intermediate position called IP is defined in advance between the LEP and the UEP. These three locations LEP, IP and UEP will become clearer later and will not be described in detail here.

In the present embodiment, a control unit (described later) shown in FIG. 4 controls the vertical speed of the substrate guide 41 based on these three positions LEP, IP and UEP. To detect these three locations LEP, IP and UEP, the first
Third sensors 46 to 48 and fins 421 are used. Each of the sensors 46 to 48 is configured by an optical sensor, and is fixed to the decompression chamber 2 via a mounting member. Here, a portion surrounded by a two-dot chain line in FIG. 2 is a cross-sectional view taken along the direction of arrow C in FIG. According to this cross-sectional view, the cross-sectional shape of the first sensor 46 has a substantially “concave” shape, and it can be seen that a gap is formed.
Light is transmitted and received in this gap. Other second
Sensor 47 and the third sensor 48 are also the first sensor 4
6 is configured in the same manner.

The fins 421 are fixed to the shaft 42 so as to pass through the gaps between the sensors 46 to 48 when the shaft 42 moves up and down. First sensor 46
When the fin 421 passes through its own gap and the transmission and reception of light is interrupted, it outputs DET ₁ which is a signal indicating that the substrate guide 41 has reached the LEP. Similarly, the second sensor 47 outputs DET ₂ which is a signal indicating that the board guide 41 has reached IP. Similarly, the third sensor 48 outputs DET ₃ which is a signal indicating that the substrate guide 41 has reached UEP.

These DET _{1 to} DET ₃ are input to the control unit 5. The control unit 5 includes a CPU 51, a ROM 52, and a motor control circuit 53, as shown in a portion surrounded by a dotted line in FIG. The CPU 51 uses the RO
It operates according to the program in M52 to control the speed of the vertical movement. The details of this control will be described later, and will not be described here.

In the present substrate processing apparatus, an exhaust system 6, a processing liquid supply unit 7, and a processing liquid discharge unit 8 are provided outside the decompression chamber 2. The exhaust system 6 reduces the pressure in the decompression chamber 2 as necessary. The processing liquid supply unit 7 supplies a processing liquid (chemical solution, cleaning liquid, or the like) required in each step to the processing tank 1. The treatment liquid discharge section 8 is provided with a drain pipe 109 in the tank.
Is discharged to the outside of the processing tank 1.

Hereinafter, the operation state of the substrate processing apparatus having the above-described structure will be described with reference to FIGS.
This will be described with reference to FIG. Also shown in FIG.
A flow chart showing each step (steps S51 to S56) of the present substrate processing apparatus, and a CP when controlling the elevating speed.
Operation performed by U51 (Steps S501 to S514)
A description will be given based on a flowchart showing the operation. It should be noted that the operation of the CPU 51 follows the program in the ROM 52.

First, referring to FIG. 6, a preparation process for substrate processing will be described. In the preparation step, pure water is supplied from a pure water supply source (not shown) installed outside the decompression chamber 2 to the upflow pipe 106 via the processing liquid supply unit 7. The upflow pipe 106 guides the supplied pure water to the injection pipe 107. The pure water guided into the injection pipe 107 is ejected from each hole 107a (see FIG. 3) into the processing tank 1 and stored in the processing tank 1 as shown by a dotted arrow in the figure. Eventually, the pure water overflows from the opening of the processing tank 1, flows into the overflow groove 104, and is discharged to the outside of the decompression chamber 2 via the overflow drain pipe 105 (see FIG. 3). Therefore, the inside of the processing tank 1 is cleaned immediately before the chemical solution processing and the substrate cleaning processing. CPU
51 controls the servomotor 45 via the motor drive circuit 53 so that the board guide 41 is stopped at a predetermined initial position (the same position as the LEP in this description) (FIG. 5; step S501). Thus, the preparation process for the substrate processing is completed (FIG. 5; step S51).

Next, the substrate transfer / loading step will be described with reference to FIG. In this step, the inside of the decompression chamber 2 is purged by a predetermined inert gas. The supply of pure water has been continued since the preparation process.
As shown in FIG. 7 (b), the fin 421
Since the board guide 41 stops at the initial position (LEP) at 501, the aforementioned DET ₁ is output to the CPU 51. C
When receiving the DET ₁ , the PU 51 selects a first speed (hereinafter, referred to as V ₁ ), and generates and outputs MES ₁ which is a signal for notifying the selected V ₁ to the motor drive circuit 53. (FIG. 5; step S502). Here, the V _1, is preferably selected is 12 [mm / sec] or less of the utmost slower rate. The lowest possible speed depends on the torque of the servo motor 45. Incidentally, V ₁ corresponds to the first speed in the invention according to the claims 2 or claim 5, why V ₁ is selected in this way will be described later. Motor drive circuit 53
Receives MES ₁ from the CPU 51, generates and outputs a signal DRV ₁ for driving the servomotor 45. This DRV ₁ is 500 [pps] (pulse per
second) The following pulse signal. Servo motor 45
Rotates forward when the DRV ₁ is input from the motor drive circuit 53, and generates a driving force corresponding to the number of pulses (≦ 500 [pps]) included in the DRV ₁ . Thereby, the board guide 4
7, as shown in FIG. 7A, the inside of the processing tank 1 filled with pure water starts to rise at V ₁ from the LEP. As the substrate guide 41 rises in the processing bath 1, it is exposed to the atmosphere in the decompression chamber 2 from its uppermost end.

Incidentally, the groove for supporting the substrate W of the substrate guide 41 is intricate and has a complicated shape, as is apparent from the above description and the drawings. Therefore, pure water tends to remain in this groove, and the pure water remaining in this groove causes particles. However, since the rise of this board guide 41 is in the processing tank 1 which is filled with pure water at a low speed of V _1, when increased at a relatively high speed pure water remaining in the groove, by the surface tension It is taken into the pure water on the processing tank 1 side. This makes it difficult for pure water to remain in these grooves, and particles hardly adhere to the substrate W. Furthermore, 12 [mm / sec] which is the upper limit of V ₁ was a value obtained by experimental results. In this experiment, Applicants
Pulling the substrate guide 41 from the pure water in a variety of experimental velocity as V _1, for each speed tested was collected so-called particle map. As a result, V ₁ becomes 12 [m
m / sec] or less, it was found that the ratio of particles adhering to the substrate W was extremely low. Above, V ₁ is 1
This is the reason why it is selected below 2 [mm / sec].

Now, the substrate guide 41 is completely in the above atmosphere.
After being exposed inside, the lowermost end of the board guide 41 is
As shown in (a), a predetermined distance vertically upward from the pure water surface
To reach a position just away. Predetermined distance from this pure water surface
Is preferably 2 to 3 [mm]. In this description, this net
The water surface has the same height as the top of the processing tank 1. IP is
At a position separated from this pure water surface vertically by this predetermined distance
is there. Fin 421 allows substrate guide 41 to reach IP
Then, as shown in FIG.
DET_Two To the CPU 51
Is output. The CPU 51 has a DET_Two Is entered,
The second speed (hereinafter, V_Two Select this)
V_Two Signal to notify the motor drive circuit 53 of
A certain MES_Two Is generated and output (FIG. 5; step S50).
3). Note that V_Two Is a claim according to claim 2 or claim 5 of the present application.
This corresponds to the second speed in the light. This V_Two as,
Preferably, the fastest speed of about 168 [mm / sec] is selected.
Thus, the speed of the substrate processing is increased. Motor drive circuit 53
From the CPU 51 to the MES_Two Is entered, the servo
DRV which is a signal for driving the data 45_Two Generate
Output. This DRV _Two Is about 7,000 [pps]
Signal. The servo motor 45 includes a motor drive circuit 5
DRV from 3_Two Is rotated forward and is included
Generates driving force according to the number of pulses ($ 7000 [pps])
I do. As a result, the board guide 41_Two 
(≒ 168 [mm / sec]). Furthermore, this
At this time, the shutter 22 of the decompression chamber 2 is opened.

The board guide 41 is provided as shown in FIG.
Then, the casing 21 rises in the atmosphere, and the casing 21 is opened.
While exposed to the outside of the decompression chamber 2 from the mouth,
To reach. The fin 421 allows the substrate guide 41 to
Upon reaching, as shown in FIG. 9B, the third sensor 4
8 so that the above DET_Three Is CPU
51. The CPU 51 has a DET_Three Is entered
Then, the third speed for stopping the substrate guide 41,
(= 0 [mm / sec]; hereinafter, V_Three This is called
V selected_Three To notify the motor drive circuit 53 of the
MES _Three Is generated and output (FIG. 5; Step S)
504). The motor drive circuit 53 sends the ME
S_Three Is input, the servo motor 45 is stopped.
For the DRV mentioned above_Three Stop generating By this
Then, the servo motor 45 stops and the substrate guide 41
Rest on P.

The CPU 51 determines in step S504
At the end of the execution, the transfer robot 7 grips a predetermined number of substrates W on which other processes have been completed by the chuck 71 and transports the substrates W to the upper portion of the substrate processing apparatus, as shown in FIG. Next, the transport robot 7 places the transported substrate W on the substrate guide 41 that is stationary at the UEP, and
1 is rotated in the direction of arrow A to release the substrate W. Thus, the substrate W is inserted into and supported by the support portion of the substrate guide 41. As is clear from the above explanation,
In the present description, UEP is defined as a position where the transfer robot 7 transfers the substrate W to the substrate guide 41.

The CPU 51 transfers such a board.
Is completed (FIG. 5; step S505), the fourth speed
(Hereinafter V_Four (= -V_Two )) And select
V _Four Is a signal for notifying the motor drive circuit 53
MES_Four Is generated and output (FIG. 5; step S50).
6). The motor drive circuit 53 sends the MES_Four
Is input, a signal for driving the servomotor 45 is input.
DRV_Four Generate and output This DRV_Four Is
Approximately 7000 [pps] to rotate the servo motor 45 negatively
You. The servo motor 45 receives the DR from the motor drive circuit 53
V_Four Is input, the number of pulses contained therein ($ 70
00 [pps]). By this
And the board guide 41 is V_Four 
(≒ 168 [mm / sec]) to start descending (arrow in FIG. 10)
B). Note that V_Four Is related to claim 3 or claim 6 of the present application.
This corresponds to the first speed of the present invention. As shown in FIG.
Then, the board guide 41 and the connecting plate 43 are completely decompressed.
When the atmosphere falls within the atmosphere of the bag 2, the shutter 22 is closed.
You.

As the substrate guide 41 continues to descend from UEP, it eventually reaches IP. At this time, FIG.
Similarly, the fin 421 is located in the gap of the second sensor 47, and DET ₂ is output to the CPU 51. CPU
51, when DET ₂ is input, a fifth speed (hereinafter, referred to as a fifth speed)
V ₅ and referred) is selected, generates and outputs the MES ₅ is a signal for notifying the V ₅ selected by the motor driving circuit 53 (FIG. 5; step S507). As the V _5, a vertically downward, selected is 48 [mm / sec] or less slow speed. Incidentally, V ₅ corresponds to the second speed of the invention according to the claims 3 or claim 6, why the V ₅ is selected in this way will be described later. The motor drive circuit 53 includes a CPU 5
When MES ₅ is input from 1, DRV ₅ which is a pulse signal for driving the servo motor 45 is generated and output. The DRV ₅ causes the servo motor 45 to perform a negative rotation at 2000 [pps] or less. When the drive signal DRV ₅ is input from the motor drive circuit 53, the servo motor 45 rotates negatively, and the board guide 41 descends vertically from the intermediate position IP at V ₅ (≦ 48 [mm / sec]). Begin to. Substrate guide 41, the intermediate position IP is away from the upper end portion of the processing tank 1 by a predetermined distance, immediately began decreasing at V _4, as is clear from FIG. 11, the pure water from the lowermost end portion It goes inside (see arrow A in the figure).

As described above, the board guide 41 is a LEP
Is controlled so as to rise relatively slowly during the ascent to UEP, and it is difficult for pure water to remain on the support portion of the substrate W. However, in some cases, pure water may actually remain. At this time, if pure water remains in the substrate guide 41, it causes particles as described above. Here, an adverse effect when the substrate guide 41 is supplied at high speed will be examined. As the substrate guide 41 is made to enter the water at a higher speed, the pure water in the processing tank 1 is scattered and scattered violently. In addition, if pure water that causes particles remains in the substrate guide 41, the substrate guide 4
The pure water remaining in 1 scatters on the substrate W. As a result of the scattered pure water, particles often adhere to the substrate W after the substrate processing. Therefore, immediately before the substrate guide 41 lands, the lowering speed of the substrate guide 41 is controlled to be slow. That is, V ₅
Is preferably low speed. By choosing this way the V ₅ to the low speed, prevents the pure water in the treatment tank 1 from being scattered becomes splash, this result, the particles become hard to adhere to the substrate W after the substrate processing. Further, an upper limit value of the lift speed V ₅ 48 [mm / sec], as in the case chose V _1, the value obtained from the results by the present applicant experiments.
The above is the reason why the V ₅ is selected below 48 [mm / sec].

Now, when the substrate guide 41 is V_Five Descend at
Go through the space between the substrate supports 111 in the processing tank 1
When each substrate W moves from the substrate guide 41 to the substrate support 111
Is passed. Each substrate W is inserted into a groove of the substrate support 111.
It is plugged in and positioned and supported there. to this
Accordingly, as shown in FIG.
Is stored in. After that, the board guide 41 reaches the LEP
The fin 421 is connected to the first sensor similarly to FIG.
It is located in the gap of the support 46. Therefore, DET₁ But
Output to CPU 51. The CPU 51 has a DET₁ Enter
When forced, V _Three (= 0 [mm / sec]) and select
Done V_Three For notifying the motor drive circuit 53 of
MES_Three Is generated and output (FIG. 5; step S5).
08). The motor drive circuit 53 sends the MES
_Three To stop the servo motor 45
The above-mentioned DRV_Three Stop generating by this,
The servo motor 45 stops, and as shown in FIG.
Guide 41 rests on the UEP. With this,
The loading process is completed (FIG. 5; step S5)
2).

Next, the chemical treatment step will be described with reference to FIG. 12 again. During this chemical treatment, the substrate guide 41 is stationary at the LEP, and the inside of the decompression chamber 2 is purged by a predetermined amount of inert gas. Under such circumstances, an etchant as a chemical is supplied from a chemical supply source (not shown) outside the decompression chamber 2 to the upflow pipe 106 (see FIG. 2). The supplied chemical is
Guided from the upflow tube 106 to the injection tube 107,
The gas is injected into the processing tank 1 from each hole 107a of the injection pipe 107. Since a chemical solution is continuously supplied to the upflow pipe 106 from an external chemical solution supply source for a certain period of time, the concentration of the chemical solution in the processing tank 1 gradually increases, and eventually becomes constant. The liquid (mainly a mixture of pure water and a chemical solution) overflowing from the processing tank 1 during that time flows into the overflow groove 104 and is discharged to the outside of the decompression chamber 2 through the overflow drain pipe 105. Thus, the substrate W is always immersed in a new chemical solution. Then, the chemical supply source stops supplying the chemical after a certain period of time has elapsed from the start of the chemical processing, and the chemical processing such as the etching is completed (FIG. 5; step S).
53).

Next, the cleaning step will be described with reference to FIG. When this cleaning step is started, pure water as a substrate cleaning liquid is supplied to an external pure water supply source (not shown).
, Pure water is supplied to the upflow pipe 106. The supplied pure water is supplied from the upflow pipe 106 to the injection pipe 10.
7, and squirts into the processing tank 1 from each hole 107 a of the injection pipe 107. The jetted pure water is supplied to each substrate W
To clean the surface of each substrate W evenly. In addition, the liquid (mainly a mixture of pure water and a chemical) that overflows from the processing tank 1 while pure water is being supplied is
It flows into the overflow groove 104 and is discharged to the outside of the decompression chamber 2 via the overflow drain pipe 105. As a result, the chemical liquid that has immersed each substrate W during the chemical liquid processing step does not stay in the processing tank 1 and is discharged to the outside together with the overflowing liquid. Since the pure water is continuously supplied into the processing tank 1, the concentration of the chemical in the processing tank 1 gradually decreases, and the inside of the processing tank 1 is replaced with pure water only. When a resistivity meter (not shown) detects that the resistivity of the liquid in the processing tank 1 has reached a predetermined value (for example, the resistivity of pure water), the supply of pure water is stopped, The cleaning step ends (FIG. 5; step S54). Although pure water is used as the substrate cleaning liquid in the above-described cleaning step, any liquid can be used as long as it can clean the substrate (for example, pure water added with hydrofluoric acid).

Next, the lifting and drying step will be described with reference to FIGS. When the cleaning process is completed (FIG. 5; step S509), the CPU 51 selects a _sixth elevating speed (hereinafter, referred to as V6), and selects the selected V
₆ which is a signal for notifying ₆ to the motor drive circuit 53
ES ₆ is generated and output (step S510). In addition,
V ₆ corresponds to the first speed in the invention according to claim 7 or claim 8 of the present application. Here, the magnitude of V ₆ is 1 [mm /
sec] to 5 [mm / sec] is preferable. When the MES ₆ is input from the CPU 51, the motor drive circuit 53 generates and outputs a signal DRV ₆ for driving the servo motor 45. This DRV ₆ has a pulse number proportional to the above V ₆ and rotates the servo motor 45. The servo motor 45 generates a driving force corresponding to the number of pulses included in the DRV ₆ input from the motor driving circuit 53. Thereby, the substrate guide 41, V ₆ from the LEP
At the beginning, and when passing through between the substrate support parts 111,
Each substrate W is transferred from the substrate support 111 to the substrate guide 41. Each substrate W is inserted into the groove of the substrate guide 41, and is positioned and supported there. Thereby, each substrate W supported by the substrate guide 41 is placed in the processing tank 1.
And is exposed to the atmosphere in the decompression chamber 2.

When each substrate W starts to be lifted in this way, IPA vapor as a vapor for drying the substrate is started to be supplied to the introduction pipe 25 from an external supply source (not shown). The supplied IPA vapor is discharged from the plurality of discharge ports 25a of the introduction pipe 25 toward the upper end of the processing tank 1 as shown by arrows in FIG. Sprayed. As a result, the IPA vapor condenses on each substrate W, and the droplets (mainly pure water) attached to each substrate W are replaced with IPA. As described above, when each substrate W is pulled up while blowing IPA vapor, the substrate guide 41 reaches IP similarly to FIG. 8B, so that DET ₂ is output to the CPU 51. When the DET ₂ is input, the CPU 51 selects V ₃ (= 0 [mm / sec]), generates the aforementioned MES _3, and outputs it to the motor drive circuit 53 (FIG. 5; step S).
511). The motor drive circuit 53 stops generating the DRV ₂ based on the input MES ₃ as described above,
As a result, the substrate guide 41 stops at the IP.

When the substrate guide 41 stops at the IP in this manner, as shown in FIG. 14, the supply of the IPA vapor is stopped, and the exhaust system 6 (see FIG. 1) is connected to the internal vacuum pump (not shown). ) To exhaust air. As a result, the pressure in the decompression chamber 2 is reduced, and the IPA condensed on the surface of each substrate W currently stationary and replaced with the droplet is evaporated, whereby the respective substrate W is dried. The exhaust system 6 stops the internal vacuum pump after operating it for a predetermined time.
Thus, the lifting and drying step is completed (FIG. 5; step S55). Here, the predetermined time refers to each substrate W
It is enough time to dry. In the vapor pulling drying step, IPA is used as the drying vapor. However, the present invention is not limited to this, and any vapor of an organic solvent that is water-soluble and has a property of reducing the surface tension of water droplets remaining on the substrate may be used. May be used.

Next, the unloading / transporting step of the substrate will be described with reference to FIG. The CPU 51
After the predetermined time has elapsed (FIG. 5; step S51)
2) Select the V ₂ described above, and generates and outputs the MES ₂ described above (FIG. 5; step S513). This V ₂ corresponds to the second speed in the invention according to claim 7 or claim 8, and a speed as fast as possible is selected as described above.
In this unloading / transporting step, the V ₂
Is also the speed at which the substrate is not excessively dried. Upon receiving MES ₂ from the CPU 51, the motor drive circuit 53 generates and outputs DRV ₂ . Servo motor 45
Generates a driving force according to the input DRV ₂ . As a result, the substrate guide 41 starts to rise in the processing bath 1 from the intermediate position IP at V ₂ (≒ 168 [mm / sec]). Further, at this time, the shutter 22 of the decompression chamber 2
Can be opened.

The substrate guide 41 raises the atmosphere in the decompression chamber 2 and, when the pressure reaches the UEP, the DET ₃ becomes CP.
Output to U51. As a result, the same processing as in step S504 is performed, and as a result, the board guide 41
It stops at P (step S514). Then, as shown by an arrow A in FIG. 15, the transfer robot 7 grips the substrate W with the chuck 71 and transfers the substrate W to another position.

In this embodiment, the board guide 41 can move at several speeds V. However, if at least two velocities, that is, relatively high and low velocities, are prepared, the speed of the substrate guide 41 can be changed near the processing liquid surface, whereby the substrate guide 41 and the substrate W Pure water attached to the gap can be sufficiently dried.

Next, a substrate processing apparatus according to a second embodiment of the present invention will be described. Since the present substrate processing apparatus is basically the same as that of the first embodiment, in the present substrate processing apparatus, components corresponding to those of the first embodiment are denoted by the same reference numerals, and Description is omitted. However, the present substrate processing apparatus is different in that a fourth sensor (not shown) is provided, and the program written in the ROM 52 is partially different. More specifically, the CPU 51 of the present substrate processing apparatus replaces step S510 among steps S501 to S514 shown in FIG. 5 with steps S1601 to S160 as shown in FIG.
2 is different. Hereinafter, the present substrate processing apparatus will be described focusing on this difference.

The cleaning step has been described in the first embodiment.
As a result, the execution of step S509 in FIG.
finish. After step S509, the CPU 51 executes the seventh
Lifting speed (hereinafter, V₇ And then select this
V₇ Is a signal for notifying the motor drive circuit 53
MES₇ Is generated and output (FIG. 16; step S16).
01). This V₇ The details of will be described later.
I will not mention it. The motor drive circuit 53 is provided by the CPU 51
MES₇ , The servo motor 45 is driven.
DRV signal for₇ Generate and output This DR
V₇ Is the above V ₇ The number of pulses is proportional to
The servo motor 45 is rotated. The servo motor 45
DRV input from the data drive circuit 53₇ Pulse included
Generates driving force according to the number. This allows the board guide
C41 is V from LEP₇ Begins to rise, and
Eventually, each substrate W is moved from the substrate support 111 to the substrate guide.
Is passed to C41. Each substrate W has a substrate guide 41
Supported by the groove. Thereby, the board guide 4
Each substrate W supported by 1 is lifted from the processing tank 1
You.

When each substrate W starts to be lifted in this way, a vapor of a predetermined organic solvent (IPA or the like) is sprayed on each substrate W that is pulled up in the same manner as described in the first embodiment. (See FIG. 13). As a result, the IPA vapor condenses on each substrate W, and the droplets (mainly pure water) attached to each substrate W are replaced with a predetermined organic solvent. When each substrate W is pulled up while spraying the vapor of the organic solvent as it is, the upper end of the substrate guide 41 reaches immediately below the pure water level. The fourth sensor is configured similarly to the first sensor 46,
The fins 421 are attached in advance so that the fins 421 pass between their own gaps when the upper end of 1 reaches just below the pure water surface. Further, the fourth sensor outputs DET ₄ which is a signal indicating that the upper end portion has reached just below the pure water level to the CPU 5.
Output to 1. CPU51, the DET ₄ Select is input V ₈ and generates and outputs an MES ₈ is a signal for notifying the V ₈ that the selected motor drive circuit 53 (FIG. 16; step S1602). Since also described in detail later in this V _8, not described here. When the MES ₈ is input from the CPU 51, the motor drive circuit 53 outputs a signal DR for driving the servo motor 45.
Generating a V ₈ and outputs. The DRV ₈ has a pulse number proportional to the above V ₈ and rotates the servo motor 45. The servo motor 45 generates a driving force corresponding to the number of pulses included in the DRV ₈ input from the motor driving circuit 53. Thereby, the rising speed of the substrate guide 41 becomes
The upper end of the board guide 41 as a boundary immediately below the pure water surface, changes from V ₇ in in V _8.

[0047] After this, eventually, as in FIG. 8 (b), the since the substrate guide 41 reaches the IP, DET ₂ the CPU
51, and the subsequent operation of the CPU 51 is as follows.
Since it is as shown after step S511 in FIG. 5, the description thereof will be omitted.

As described above, in the substrate processing apparatus according to the second embodiment, the rising speed of the substrate guide 41 is changed from V ₇ to V ₈ with the upper end portion of the substrate guide 41 immediately below the pure water surface. Change. Here, a description will be given of the relationship between V ₇ and V _8. As described in the first embodiment, the lower part of the substrate W is inserted into the groove of the substrate guide 41. Therefore, in the supported substrate W, it is above the part inserted in the groove (that is, above the substrate guide 41).
It is clear from the first embodiment that even if the substrate W is pulled up at a relatively high speed, it does not cause particles. However, the portion that fits in the groove (the groove portion of the substrate guide 41) causes particles, so that the substrate W needs to be pulled up at a relatively low speed. Therefore, the relationship between the V ₇ and V ₈ is, V ₇
> To meet the V ₈ becomes the minimum necessary conditions. V ₈
Is the first in the invention according to claim 7 or claim 8 of the present application.
Speed. In addition, V ₈ is 1 [mm / sec] from 5 [mm
/ sec]. Thus, the second
According to the embodiment, when pulling up and drying is performed, the speed can be optimally controlled in accordance with the position of the supported substrate W, whereby the pure water adhering to the gap between the substrate guide 41 and the substrate W can be controlled. Since the water can be sufficiently dried, it is possible to prevent particles from adhering to the surface of the substrate W and generation of a watermark.

Next, a substrate processing apparatus according to a third embodiment of the present invention will be described. The substrate processing apparatus according to the present embodiment executes a so-called drain drying step. The structure of the processing tank is the same as that shown in FIG. 3, and the structure of the decompression chamber is partially the same as that shown in FIGS. Similar.
Therefore, in the present substrate processing apparatus, components corresponding to those of the first embodiment are denoted by the same reference numerals, and
The description is omitted. FIG. 17 is a cross-sectional view illustrating a configuration of the substrate processing apparatus according to the present embodiment. The decompression chamber 2 shown in FIG. 17 can lower the upper end surface thereof, the installation position of the introduction pipe 25, and the first to third sensors 46 to 48, as compared with the decompression chamber shown in FIGS. Fin 42
1 in that a control unit 9 is provided instead of the control unit 1 and the control unit 5. There are no other differences. First, the introduction pipe 25 is installed near the uppermost portion inside the casing 21. Since the control unit 9 will be described later, it will not be described here.

The present substrate processing apparatus also executes a series of steps (see FIG. 5) of a preparation step, a transport / loading step, a chemical solution processing step, and a cleaning step, similarly to the first embodiment. FIG. 17 further shows the state of the substrate processing apparatus at the end of the cleaning step. At the end of the substrate processing, the processing bath 1 is sufficiently filled with the cleaning liquid.
The board guide 41 is stationary at a position corresponding to the above-described LEP. Under such circumstances, the drain drying step is started. In the drain drying step, first, a very small amount of the cleaning liquid is discharged from the tank drain pipe 109 in order to lower the cleaning liquid level in the processing tank 1 by a very small amount. This is to prevent the organic solvent condensed on the cleaning liquid surface from flowing out of the processing tank 1.

After the cleaning liquid has been discharged, the introduction pipe 25 is directed to the surface of the cleaning liquid stored in the processing tank 1 through the vapor of the organic solvent (described above) supplied from an external supply source, as shown in FIG. Is discharged from the discharge port 25a. As a result, the organic solvent condenses on the cleaning liquid level. The controller 9 opens the quick-open valve 97 by a predetermined amount after a lapse of time from the start of the supply of the organic solvent such that the layer of the condensed organic solvent has a constant thickness, and controls the descending speed described later. Then, the cleaning liquid in the processing tank 1 is discharged from the drain pipe 109 in the tank. During this discharge, the inlet pipe 25 continues to supply the vapor of the organic solvent.
Further, as the cleaning liquid level is lowered by this discharge at a controlled lowering speed, each substrate W supported by the substrate support 111 is exposed to the atmosphere in the decompression chamber 2 and each substrate W is provided with the cleaning liquid level. Condensed organic solvent adheres.
Therefore, the droplet of the cleaning liquid adhering to each substrate W is replaced with the condensed organic solvent. Thereby, each substrate W
The surface is sufficiently dried without the droplets remaining on the surface. Then, as shown in FIG. 19, when the position of the cleaning liquid surface is sufficiently lowered with respect to each substrate, and the remaining cleaning liquid between each substrate W and the groove of the substrate support 111 is sufficiently dried, the organic solvent is removed. The supply of steam is terminated.

After the completion of the supply of the vapor of the organic solvent, the inside of the decompression chamber 2 is purged with a predetermined amount of inert gas. At the same time, the pressure inside the decompression chamber 2 is reduced by the exhaust system 6. As a result, the boiling point of the organic solvent decreases, the organic solvent remaining in the decompression chamber 2 evaporates easily, and the surface of each substrate W is dried in a short time. The evacuation system 6 stops the decompression after a lapse of time such that the unnecessary organic solvent in the decompression chamber 2 is sufficiently dried by the decompression. After the pressure reduction is stopped, purging is performed again in the pressure reduction chamber 2 to return the pressure reduction chamber 2 to the atmospheric pressure. Thus, the drain drying step is completed. As described above, the present substrate processing apparatus uses the LPD (Low Pressure Dry Inflow) by the decompression chamber 2 and the exhaust system 6.
g) can be performed, and a high-quality substrate W can be generated.

After the drain drying step, the present substrate processing apparatus executes the unloading / transporting step, which has already been described in step S56 in FIG.

Incidentally, the quick release valve 97 is provided on a pipe for guiding the cleaning liquid discharged from the tank drain pipe 109. When the orifice diameter of the quick opening valve 97 is controlled to be constant during the drain drying process, the flow rate of the cleaning liquid discharged to the outside of the decompression chamber 2 through the orifice is determined by the cleaning liquid stored in the processing tank 1. Potential energy,
That is, it is proportional to the height of the cleaning liquid level. Therefore, when the position of the cleaning liquid level decreases, the flow rate of the cleaning liquid discharged from the quick release valve 97 decreases, and as a result, the descending speed of the cleaning liquid level decreases. Further, as is apparent from the drawing, the lower part of the substrate W is inserted into the groove of the substrate supporting part 111.
Therefore, even if the substrate W is relatively quickly pulled up above the portion of the supported substrate W that is fitted into the groove (that is, above the substrate support portion 111), the factors of the particles may be reduced. What is not necessary is clear from the first embodiment.

From such a background, the control unit 9 executes the following control of the descending speed of the cleaning liquid during the drain drying step. As described above, the control unit 9 controls the liquid level sensor 91
, A micro pressure gauge 92, a CPU 93, a ROM 94, an electropneumatic regulator 95, a pressure regulator 96 (actuator), and a quick release valve 97. Liquid level sensor 9
Numeral 1 is disposed in the processing tank 1, and a minute amount of inert gas is continuously supplied by the micro pressure gauge 92 throughout the drain drying step. The liquid level sensor 91 discharges the supplied inert gas from its tip. The discharged inert gas is
The bubbles become air bubbles and float in the hollow cylindrical cover that covers the liquid level sensor 91 (see FIG. 18). The micro pressure gauge 92 is configured to measure the processing tank 1 based on the discharge pressure of bubbles from the liquid level sensor 91
Measure the current height of the cleaning liquid level in the inside. here,
In the present embodiment, it is assumed that the height of the cleaning liquid level measured by the micro pressure gauge 92 corresponds to the above-described LEP. Micro pressure gauge 9
2 is a signal DE including the measured height H of the cleaning liquid level.
The T _H at predetermined intervals and outputs it to the CPU92.

The ROM 94 has a control for this descent speed.
Is written in advance. CPU93
Executes the processing procedure shown in FIG. 20 according to this program.
Execute to control the descending speed of the cleaning liquid. CPU92
Is the above DET_H Is waiting for
Step S201). The CPU 92 has a DET_H Is entered
Then, the user accesses a table prepared in the ROM 94 in advance.
Access (step S202). This table contains D
ET_H The optimal orifice diameter (D _ori 
Is written in advance. More specifically, washing
The height H of the purified liquid surface is equal to the height of the upper end
Bottom, H_Two From the uppermost end of the substrate support 111.
Height equal to the part directly above and separated by a predetermined distance (hereinafter, H
₁ Within the range up to V) of the second embodiment.₇ To
The corresponding relatively high descent speed (hereinafter V₉ Is called)
D that gives_ori Is written to the table
You. In contrast, the height H is H₁ To H₀ (The above LE
Up to the height corresponding to P).₈ Phase
Relatively low descent speed (hereinafter, V_TenIs called)
D as obtained_ori Is written to the table.

After step S202, the CPU 92 takes out the D _ori corresponding to the height H included in the input DET _H from the accessed table and outputs it to the electropneumatic regulator 95 (step S203).
Return to 01. Electropneumatic regulator 95, based on a predetermined arithmetic expression, the pilot air pressure with the D _ori inputted from CPU 92 (hereinafter, referred to as P _PA) calculates and outputs to the pressure regulator 96. The pressure regulator 96 determines the opening degree (orifice diameter) of the quick release valve 97 according to the input _PA .
Is adjusted to control the flow rate of the cleaning liquid discharged from the tank drain pipe 109. As a result, in the drain drying step, the descending speed of the cleaning liquid surface descending from the upper end of the processing tank 1 is a constant V ₉ when H ₂ ≧ H ≧ H ₁ , and H ₁ >
When H ≧ H ₀ , V ₁₀ is constant. Thus, the same effect as in the second embodiment can be obtained in the substrate processing apparatus that executes the drain drying step.

In the substrate processing apparatuses according to the first and second embodiments, drying under reduced pressure is performed by the reduced pressure chamber 2. However, even in a substrate processing apparatus having a chamber that does not dry under reduced pressure, a specific effect can be obtained in each embodiment. In the transport / loading process (FIG. 5, step S52), the substrate guide 4
The present invention may be applied to a case where the liquid level is raised and lowered while fixing 1.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a configuration of a substrate processing apparatus according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view of the substrate processing apparatus shown in FIG. 1 when a cross section taken along a direction indicated by an arrow A indicated by a two-dot chain line is viewed from a direction indicated by an arrow B;

FIG. 3 is a partially cutaway perspective view showing the configuration of the processing tank 1 shown in FIGS. 1 and 2.

FIG. 4 is a block diagram showing a configuration of a control unit 5 shown in FIG.

FIG. 5 is a flowchart showing each step of the substrate processing apparatus shown in FIGS. 1 to 3, and a flowchart showing the operation of the CPU 51 when controlling the elevating speed.

FIG. 6 is a diagram illustrating a preparation process for substrate processing of the substrate processing apparatus shown in FIGS. 1 to 3;

FIG. 7 is a diagram illustrating the transfer / transfer of a substrate of the substrate processing apparatus illustrated in FIGS.
It is a 1st figure explaining a loading process.

FIG. 8 is a diagram illustrating step S503 shown in FIG.

FIG. 9 is a diagram illustrating step S504 shown in FIG.

10 is a diagram illustrating an operation performed by the transfer robot 7 when the execution of step S504 illustrated in FIG. 5 ends.

11 is a diagram illustrating a state in which the substrate guide 41 enters into pure water from its lowermost portion immediately after execution of step S507 illustrated in FIG. 5 is completed.

FIG. 12 shows the execution of step S508 shown in FIG.
FIG. 3 is a diagram illustrating a state when each substrate W is stored in a processing tank 1 and a state when a substrate guide 41 is stationary at UEP.

FIG. 13 is a first diagram illustrating a pull-up drying process of the substrate processing apparatus illustrated in FIGS. 1 to 3;

FIG. 14 is a second diagram illustrating a pull-up drying process of the substrate processing apparatus illustrated in FIGS. 1 to 3;

FIG. 15 is a second diagram illustrating a substrate transport / loading process of the substrate processing apparatus illustrated in FIGS. 1 to 3;

FIG. 16 is a diagram illustrating an operation executed by a CPU 51 of the substrate processing apparatus according to the second embodiment of the present invention.

FIG. 17 is a sectional view illustrating a configuration of a substrate processing apparatus according to a third embodiment of the present invention.

18 is a view showing a state in which a discharge port 25a of an introduction pipe 25 discharges a vapor of an organic solvent (described above) toward a cleaning liquid level in the processing tank 1 in a drain drying step of the substrate processing apparatus of FIG. is there.

19 is a diagram showing a state when the supply of the vapor of the organic solvent is completed in the drain drying step of the substrate processing apparatus of FIG. 17;

20 is a flowchart showing a procedure of processing executed by CPU 93 in FIG. 17 according to a program.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Processing tank 2 ... Decompression chamber 4 ... Elevating device 5, 9 ... Control part 111 ... Substrate support part 41 ... Substrate guide 25 ... Inlet pipe 25a ... Discharge port LEP ... Lower limit position IP ... Middle position UEP ... Upper limit position W ... Substrate

────────────────────────────────────────────────── ─── Continued on front page (51) Int.Cl. ⁶ Identification code FI F26B 21/02 F26B 21/02 H01L 21/306 H01L 21/306 J (72) Inventor Masahiro Motomura Yasu-machi, Yasu-gun, Yasu-gun, Shiga Prefecture 2426-1, Mikami Kuchinogawara Dainippon Screen Mfg. Co., Ltd. Yasu Office

Claims (8)

[Claims] 1. A method in which a substrate is immersed in a processing liquid while being supported by a support, and the substrate is treated with the processing liquid. The method includes immersing the support in the processing liquid. In a case where the processing liquid is raised and lowered relatively to the liquid level of the processing liquid to be supplied, the supporting part is moved before the supporting part reaches a reference position set in advance by a predetermined distance from the liquid level. And the liquid level is set to a first speed, and when the support reaches the reference position, the first
Setting the relative speed to a second speed different from the speed of
Substrate processing method. 2. The apparatus according to claim 1, wherein the first speed is lower than the second speed when the support section rises relatively from the processing liquid to the liquid level. Substrate processing method. 3. The method according to claim 2, wherein the second speed is lower than the first speed when the support unit is relatively lowered from a position higher than the reference to the liquid level. 3. The substrate processing method according to 1 or 2. 4. An apparatus for immersing a substrate in a processing liquid and processing the substrate with the processing liquid, comprising: a support for supporting the substrate; and a support for immersing the substrate in the processing liquid. An elevating unit that raises and lowers the unit relatively to the liquid surface of the processing liquid; a detector that detects a positional relationship between the support unit and the liquid surface that is raised and lowered relatively by the elevating unit; Based on the positional relationship detected by the section, before the support section reaches a preset reference position a predetermined distance above the liquid level, the relative speed between the support section and the liquid level is set to the first speed. And a second speed different from the first speed when the support reaches the reference.
And a control unit for controlling the relative speed to the speed of the substrate. 5. The control unit controls the first speed to be lower than the second speed when the support unit relatively rises from the processing liquid to the liquid level. The substrate processing apparatus according to claim 4, wherein 6. The control unit controls the second speed to be lower than the first speed when the support unit descends relatively to the liquid level from a position higher than the reference. The substrate processing apparatus according to claim 4, wherein: 7. A method of drying a substrate by supporting a substrate on a support portion and immersing the substrate in a processing liquid, and then supplying dry steam near a liquid surface of the processing liquid to dry the substrate. In order to dry the substrate with dry steam, when the supporting portion rises relatively from the processing liquid with respect to the liquid surface while supporting the substrate, the support portion is moved upward by a certain distance from the liquid surface. Before the support reaches the reference position set in advance, the relative speed between the support and the liquid surface is set to a first speed, and when the support reaches the reference position And setting the relative speed to a second speed, wherein the first speed is lower than the second speed. 8. An apparatus for drying a substrate by immersing a substrate in a processing liquid and then supplying dry steam near a liquid surface of the processing liquid to dry the substrate. A supporting portion that supports the supporting portion; a rising portion that raises the supporting portion that supports the substrate relative to a liquid surface of the processing liquid; and the rising portion moves the supporting portion from within the processing liquid to the liquid surface. A supply unit that supplies the dry steam supplied from the outside to the vicinity of the liquid surface while the liquid is relatively rising, the support unit and the liquid surface that are relatively raised by the rising unit A detecting unit that detects a positional relationship between the detecting unit and the detecting unit, based on the positional relationship detected by the detecting unit, before the support unit reaches a reference position that is preset a predetermined distance above the liquid level, The relative speed between the support and the liquid surface is a first speed And a control unit that controls the relative speed to a second speed when the support unit reaches the reference, wherein the first speed is smaller than the second speed. Substrate processing equipment.