JPH11295159A - Stress measuring device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To measure a stress of microstructure with high spatial resolution. SOLUTION: This device is provided with an irradiating means 1 for irradiating a sample 2 with light, a modulating means 6 for modulating at least an emergy state of the means 1 on the sample 2, and a processing means 3 for finding a stress value based on a reflected light intensity pattern. An irradiated point P of the sample 2 is irradiated with light from the irradiating means 1, the modulating means 6 modulates the energy state of the point P, the processing means 3 detects reflected light reflected in the point P by a detector 4, and the stress value is computed in an operation unit 5 based on the detected reflected light intensity pattern.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a stress measuring device, and more particularly, to a stress measuring device suitable for device inspection in a semiconductor process and measuring a film stress.

[0002]

2. Description of the Related Art In manufacturing a device in a semiconductor process, stress may be generated in a thin film formed by film formation. The stress generated in the thin film not only affects the characteristics of the thin film itself, but also generates a stress in a peripheral portion of the thin film such as a silicon substrate, and may affect the entire device.

In a semiconductor device, a structure requiring stress measurement includes, for example, an edge portion of a LOCOS structure or a trench structure. Since the edge portion has a structure in which stress concentration is likely to occur, an influence due to stress is likely to occur. This stress tends to increase as the miniaturization progresses, and this will become a further problem in the future.

In general, X-ray diffraction measurement, shape measurement, Raman measurement, and the like are known as methods for measuring stress in a minute structure. In particular, in order to measure a stress generated in a minute portion of a semiconductor device, micro-Raman having relatively high spatial resolution is often used.

[0005]

However, with the miniaturization of semiconductor devices, it has become difficult to evaluate actual devices by the conventional method, and a stress measuring device with higher spatial resolution is required. Therefore, an object of the present invention is to provide a stress measuring device capable of measuring the stress of a microstructure with high spatial resolution.

[0006]

The reflected light obtained by irradiating a sample such as a thin film with light has a characteristic spectral pattern that reflects the electronic state of the sample in the wavelength range. The applicant of the present invention has confirmed that this pattern change shifts according to the stress at the irradiation point of the sample. The present invention measures the stress of the sample by detecting a change in the pattern shifted by the stress.

A first aspect of the stress measuring apparatus according to the present invention comprises an irradiating means for irradiating a sample with light and a processing means for obtaining a stress value from a reflected light intensity pattern. FIG. 1 is a schematic diagram for explaining a first embodiment of the stress measuring device of the present invention. In FIG. 1, a stress measuring device irradiates light from an irradiation unit 1 to an irradiation point P of a sample 2, a processing unit 3 detects a reflected light reflected at the irradiation point P by a detector 4, A stress value is calculated based on the detected reflection intensity pattern.

The irradiating means is a means for irradiating a measuring point on the sample with light, and the irradiating light is position-reflected at the irradiating point. This reflected light has a reflected light intensity pattern corresponding to the band structure of the sample at the irradiation point. The present applicant has found that this reflected light intensity pattern shifts according to the stress generated at the irradiation point, and that there is a certain relationship between the wavelength shift amount and the stress value. A wavelength shift amount is obtained from the pattern, and a stress value is obtained from the wavelength shift. FIG. 4A is a schematic diagram for explaining the wavelength shift of the reflected light intensity pattern. FIG. 4A schematically shows a reflected light intensity pattern. The wavelength of the reflected light intensity pattern with respect to the wavelength shifts from, for example, a pattern shown by a solid line to a pattern shown by a broken line according to the presence or absence of stress. The shift amount of the wavelength shift corresponds to the stress value at the sample site.

The processing means measures the reflected light intensity pattern at the measurement point, obtains a wavelength shift amount from the reflected light intensity, and obtains a stress value or a stress corresponding value from the wavelength shift amount by using the above relationship.

The reflected light intensity pattern is a change in the wavelength of the reflected light intensity, and can be obtained by changing the wavelength on the irradiation light side or the reflected light side and detecting the intensity of the reflected light with respect to this wavelength by the light receiving means. .

In the first mode for changing the wavelength, the wavelength is changed on the irradiation light side. The wavelength is changed by dispersing the light with a monochromator, and the separated monochromatic light is applied to the sample portion. By controlling this monochromator, the wavelength to be irradiated can be changed.

In a second mode for changing the wavelength, the wavelength is changed on the reflected light side. The wavelength is changed by irradiating the sample portion with light that is not split and then splitting the reflected light with a monochromator. By controlling this monochromator, the wavelength of the reflected light to be detected can be changed. Further, as another aspect, a configuration in which polarizing means is provided on the irradiation light side and the reflection light side can increase the S / N ratio of the detection signal.

A second embodiment of the stress measuring apparatus according to the present invention comprises an irradiating means for irradiating the sample with light, a modulating means for modulating the energy state of at least an irradiating part on the sample, And a processing means for obtaining a value. The configuration of the second embodiment is a configuration including, in addition to the configuration of the first embodiment, a modulation unit that modulates at least the energy state of the irradiation unit on the sample. In the second embodiment of the stress measurement device shown in FIG. 2, the irradiation unit 1 irradiates light to the irradiation point P of the sample 2, the modulation unit 6 modulates the energy state of the irradiation point P, and the processing unit 3 The reflected light reflected at the irradiation point P is detected by the detector 4, and the stress value is calculated based on the reflection intensity pattern detected by the calculation device 5.

The modulating means excites the sample site by applying a stimulus to the irradiation unit from the outside, thereby changing the energy state, and thereby changing the reflection intensity pattern. The reflection spectrum detected thereby becomes a differential signal due to the modulation, and the influence of the background signal can be removed. FIG. 4B is a schematic diagram for explaining the wavelength shift of the reflection spectrum. FIG.
(B) schematically shows the reflection spectrum. The wavelength of the reflection spectrum shifts from, for example, a pattern shown by a solid line to a pattern shown by a broken line according to the presence or absence of stress.
The shift amount of the wavelength shift corresponds to the stress value at the sample site. At the critical point of the band structure, a signal representing a fine structure reflecting the structure is detected. The reflection spectrum can be detected by detecting the modulated reflected light in synchronization with the modulation period of the modulation means.

The first mode of the modulating means modulates the electron beam by turning it on and off intermittently and irradiates the modulated electron beam. By irradiating the sample site with this modulated electron beam, the energy state at the sample site changes, and the intensity of the reflected light reflected at the site changes.

A second mode of the modulating means modulates the ion beam by intermittently turning it on and off, and irradiates the modulated ion beam. By irradiating the sample portion with the modulated ion beam, the energy state at the sample portion changes, and the reflected light intensity of the light reflected at the sample portion changes.

A third mode of the modulating means modulates an electric field applied to a sample portion by voltage control. By modulating the electric field applied to the sample site, the energy state at the sample site changes, and the intensity of the light reflected at the site changes.

A fourth mode of the modulating means is to apply heat to the sample portion while modulating the heat. By modulating the heat applied to the sample site, the energy state at the sample site changes, and the reflected light intensity of the light reflected at the site changes.

A fifth aspect of the modulating means is to apply a sound wave to a sample portion while modulating the sound wave. By modulating the sound wave applied to the sample site, the energy state at the sample site changes, and the reflected light intensity of the light reflected at the site changes.

Therefore, by providing the modulation means, a detection signal of a reflected light intensity pattern having a high S / N ratio can be obtained. Further, the configuration of the third mode of the stress measuring device of the present invention is the same as that of the first and second modes,
The irradiating means irradiates irradiation light including at least two different wavelengths, and the processing means obtains a stress value based on a wavelength difference between the wavelengths and a reflected light intensity difference.
In the third embodiment of the stress measuring device shown in FIG. 3, the irradiation unit 1 irradiates the irradiation point P of the sample 2 with light of a plurality of different wavelengths, and the modulation unit 6 modulates the energy state of the irradiation point P. The processing means 3 detects the reflected light reflected at the irradiation point P by the detector 4 and calculates a stress value based on the reflection intensity for each wavelength detected by the calculating device 5.

In the configuration of the third embodiment, the relationship between the wavelength shift, the change in reflected light intensity, and the stress is obtained in advance, and the absolute value of the stress is obtained from the change in the reflected light intensity obtained at different wavelengths, the wavelength difference, and the relationship. The value can be determined. FIG. 4C is a schematic diagram for explaining the reflected light intensity and the wavelength shift for each wavelength. FIG. 4C schematically shows the reflection spectrum. The wavelength of the reflection spectrum shifts, for example, from a pattern shown by a solid line to a pattern shown by a broken line according to the presence or absence of stress.

In this reflection spectrum, the intensity of the reflected light measured with the light of different wavelengths λ1 and λ2 is represented by R11 and R12 when the wavelengths λ1 and λ2 before the wavelength shift are used, and the values based on the wavelengths λ1 and λ2 after the wavelength shift. To R21, R22
Then, the wavelength shift Δλ is approximately Δλ = (λ1−λ2) · (R11−R21) / (R22
-R21). The stress value can be obtained by obtaining the relationship between the wavelength shift Δλ and the stress value in advance.

The third embodiment can be obtained by measuring two wavelengths λ1 and λ2 at one sample portion. Therefore, it is possible to reduce the number of wavelengths applied to the sample portion, and it is possible to perform stress measurement in a short time.

In the configuration of the third embodiment, a specific wavelength is identified from a plurality of wavelengths. In the first mode for identifying wavelengths, wavelength identification is performed on the irradiation light side. A plurality of light sources for irradiating a plurality of wavelengths are provided on the irradiation side, and wavelength identification is performed by switching the light sources.

The second mode of identifying the wavelength is to perform wavelength identification on the reflected light side, and the wavelength identification is performed by separating the reflected light obtained from a plurality of lights incident on the sample portion by a filter or a diffraction grating. Do.

A third mode for identifying the wavelength is to perform wavelength identification on the irradiation light side and on the reflected light side. The incident light is incident on the sample site in a time division manner, and the reflected light is synchronized with the time division. In this way, wavelength identification is performed.

In a fourth mode for identifying the wavelength, wavelength identification is performed on the irradiation light side and the reflected light side. A plurality of incident lights are irradiated on the same sample portion at different incident angles, and the reflected light is reflected. Is detected at different reflection angles to perform wavelength identification. Further, the first, second, and third stress measuring devices of the present invention
In each of the embodiments, the irradiation light, the reflected light, and the electron beam may be coaxial.

According to the present invention, it is possible to measure the stress of a minute part by reducing the spot diameter of the irradiation light or narrowing the modulation area by the modulation means. Further, the measuring apparatus of the present invention assumes that a change in the spectral pattern of a sample such as a thin film is caused by stress, and measures this stress. It also changes depending on the characteristics. Therefore,
The measurement device of the present invention can be applied to measurement of the internal state of a sample that changes the spectral pattern of the sample such as crystal characteristics.

[0029]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, first, second and third embodiments of the stress measuring device of the present invention will be described in detail with reference to the drawings. 5 to 10 are diagrams for explaining the first and second embodiments of the present invention, and FIGS. 11 to 16 are diagrams for explaining the third embodiment of the present invention.

First, the first and second embodiments of the present invention will be described. Note that the first mode is a configuration in which the modulating means is removed from the second mode, and differs in that the reflected light intensity pattern is measured by the reflected light intensity or the differential value of the reflected light intensity. Since the configuration can be substantially the same, the second embodiment will be described here.

FIG. 5 is a schematic block diagram for explaining a first configuration example of the present invention, which corresponds to the first and second embodiments.
This is a configuration example in which the wavelength is changed by splitting light with a monochromator on the irradiation light side. In FIG. 5, the irradiation light side is
The light from the light source 11 having a plurality of wavelengths is
To irradiate the irradiation point P of the sample 2 placed on the stage 7 through an optical fiber or an optical system 13 of a lens system. The light reflected at the irradiation point P is detected by a photodetector 41 such as a photodiode or a photomultiplier. An electron beam is emitted from the electron beam source 61 to or near the irradiation point P. The blanking unit 62 receives the blanking signal from the signal generator 63, intermittently irradiates the electron beam to the irradiation point P of the sample,
The electronic state of the irradiation point P is modulated.

When no modulation is performed, the photodetector 41 detects only the intensity of the reflected light. In the case of performing the modulation, the intensity of the reflected light and the differential value of the intensity change of the reflected light due to the modulation are detected.

The detection signal of the photodetector 41 is
After amplifying the signal by 1, the digital multimeter 52 obtains the reflected light intensity R, and the lock-in amplifier 53 obtains the differential value ΔR of the change in the intensity of the reflected light. The lock-in amplifier 5
3 receives the signal from the signal generator 63 and synchronizes with the blanking of the electron beam. The arithmetic unit 54 calculates the reflected light intensity R
And the differential value ΔR are input to obtain the reflected light spectrum, and the wavelength shift and stress are calculated. In the wavelength change in the measurement of the reflected light spectrum, the wavelength of the irradiation light to the sample 2 is changed by controlling the monochromator 12.

Further, by reducing the spot diameter of the irradiation light or narrowing the modulation area by the electron beam, it becomes possible to measure the stress of a minute portion. When an electron beam is used as the modulating means, the sample 2 is evacuated by the vacuum device 8.

Next, two processes for obtaining the wavelength shift in the first and second embodiments will be described with reference to FIGS. FIG. 6 is a schematic diagram for explaining a first process for obtaining a wavelength shift. In the first method, the reflected light spectrum is obtained by measuring the intensity of the reflected light while changing the wavelength of the irradiation light by spectroscopy or the like for each measurement point on the sample, and comparing the obtained reflected light spectrum. This is to determine the wavelength shift. For example, point A and point B in FIG.
When the stress states are different, a wavelength shift Δλ as shown by a solid line and a broken line in FIG. 6B occurs between the reflected light spectra obtained at each point. This wavelength shift Δλ corresponds to the difference between the stresses at both measurement points. Therefore, the stress state of the sample 2 can be determined by determining the reflected light spectrum of each point while scanning the sample 2. The stress value obtained here is a relative value.

FIG. 7 is a schematic diagram for explaining a second process for obtaining a wavelength shift. The second method is to calculate the reflected light intensity at the measurement point using light of a specific wavelength, and to estimate the wavelength shift from the difference between the obtained reflected light intensity and the reference reflected light intensity.

For example, at the point C in FIG. 7A, the reflected light intensity R0 of the light having the wavelength λ0 is obtained, and as shown in FIG. 7B, the difference ΔR from the reference value R is obtained. Note that the reference value R can be a reflected light intensity at an arbitrary point. This difference in reflected light intensity has a fixed relationship with the wavelength shift amount, and the wavelength shift amount can be estimated from the difference in reflected light intensity. For example, in FIG. 7C, the wavelength shift is Δλ1
, The difference between the reflected light intensities is ΔR1, and
If the wavelength shift is Δλ2, the difference in reflected light intensity is Δ
R2. Therefore, the wavelength shift amount Δλ can be estimated by determining the difference ΔR in the reflected light intensity. The stress value obtained here is a relative value.

Hereinafter, second to fourth configuration examples corresponding to the first and second embodiments of the present invention will be described with reference to FIGS. FIG. 8 is a schematic block diagram for explaining a second configuration example of the present invention, and is a configuration example in which the wavelength is changed by dispersing light with a monochromator on the reflected light side. In FIG. 8, the irradiation light side irradiates the light of the light source 11 having a plurality of wavelengths to the irradiation point P of the sample 2 placed on the stage 7 via an optical fiber or an optical system 13 of a lens system. On the detection side, the reflected light reflected at the irradiation point P is separated by the monochromator 42, and the light detector 41 such as a photodiode or a photomultiplier arranged according to the spectral wavelength is used.
To detect. By splitting the spectrum with the monochromator 42, the wavelength is changed in the measurement of the reflected light spectrum as in the first configuration example. Note that the configurations and processing operations of the modulating unit and the processing unit can be the same as those of the first configuration, and a description thereof will be omitted.

FIG. 9 is a schematic block diagram for explaining a third configuration example of the present invention, in which specific reflection light is provided by disposing polarizing plates 14 and 44 on the irradiation light side and the reflection light side. It is an example. In FIG. 9, on the irradiation light side, irradiation light obtained by polarizing light from a light source 11 having a plurality of wavelengths through an optical fiber or an optical system 13 of a lens system and further passing through a polarizing plate 14 is applied to the sample 2 on the stage 7. Irradiation point P
Irradiation. On the detection side, the reflected light reflected at the irradiation point P is extracted through the polarizing plate 44 to extract a specific polarized reflected light, and is detected by the photodetector 41 such as a photodiode or a photomultiplier. Note that the configurations and processing operations of the modulating unit and the processing unit can be the same as those of the first configuration, and a description thereof will be omitted.

FIG. 10 is a schematic block diagram for explaining a fourth configuration example of the present invention, in which the irradiation light, the reflected light, and the electron beam are on the same axis. In FIG.
On the irradiation light side, the light of the light source 11 having a plurality of wavelengths is converted into monochromatic light by the monochromator 12, and the light is emitted to the stage
The irradiation point P of the sample 2 arranged above is irradiated coaxially with the electron beam. On the detection side, reflected light coaxial with the electron beam reflected at the irradiation point P is detected by a photodetector 41 such as a photodiode or a photomultiplier via an optical system 45.

By arranging the optical systems 15 and 45, it is possible to make the irradiation light, the reflected light, and the electron beam coaxial with each other. With this structure, the light irradiation point and the light By focusing the reflection point and the irradiation point of the electron beam on the measurement point on the sample, it is possible to measure a minute area.

Note that the configurations and processing operations of the modulating means and the processing means can be the same as those of the first configuration, and the description is omitted here. Next, a third embodiment of the present invention will be described. The third mode is the first and second modes,
Irradiating light including at least two different wavelengths is radiated from the irradiating means, and a stress value is obtained in the processing means based on a wavelength difference between the wavelengths and a reflected light intensity difference.

FIG. 11 is a schematic block diagram for explaining a fifth configuration example of the present invention, and corresponds to the third embodiment, and switches irradiation light having different wavelengths of wavelengths λ1 and λ2 from the irradiation light side. This is an example of a configuration for measuring the intensity of reflected light due to irradiation light of each wavelength. In FIG. 11, the irradiation light side is
Light sources 15 and 16 having wavelengths λ1 and λ2, and a switch 17 for switching and irradiating the respective wavelengths of light, and irradiating points of the sample 2 disposed on the stage 7 via an optical fiber or an optical system 13 of a lens system. Irradiate P. The light reflected at the irradiation point P is detected by a photodetector 41 such as a photodiode or a photomultiplier.

The flow of the modulation by the modulating means and the processing of the detection signal are substantially the same as those in the above-described configuration example. The irradiating means 1 irradiates the irradiation point of the sample with light of a plurality of different wavelengths, The processing means detects the reflected light reflected at the irradiation point by the detector 4 and calculates the stress value based on the reflection intensity detected for each wavelength by the arithmetic unit 5.

Hereinafter, in the third embodiment, a process for obtaining a wavelength shift will be described with reference to FIGS. 12 and 13, and a description of common portions will be omitted. FIG. 12 is a schematic diagram for explaining the process of obtaining the wavelength shift.
FIG. 13 is an enlarged view thereof.

In the configuration of the third embodiment, the relationship between the wavelength shift, the change in reflected light intensity, and the stress is determined in advance. FIG. 12 schematically shows a reflection spectrum when there is no stress (solid line in the figure) and a reflection spectrum when there is stress (broken line in the figure). The wavelength of the reflection spectrum shifts from the pattern shown by the solid line to the pattern shown by the broken line according to the presence or absence of stress.

In this reflection spectrum, the intensities of the reflected light due to the different wavelengths λ1 and λ2 are R11 and R12 at the wavelengths λ1 and λ2 before the wavelength shift, and R21 and R22 at the wavelengths λ1 and λ2 after the wavelength shift. . Here, assuming that there is no stress before the wavelength shift, the reflected light intensities R11 and R12 at the wavelengths λ1 and λ2 at this time can be obtained in advance.

In the enlarged view of FIG. 13, the reflection spectrum in the case where there is no stress indicated by the solid line in FIG.
The reflected light intensity at λ2 is R1 as shown by the circle in the figure.
1, R12. When the wavelength shifts by Δλ with respect to this reflection spectrum, the reflection spectrum becomes a reflection spectrum indicated by a broken line in the figure, and the reflected light intensities at the wavelengths λ1 and λ2 are R21 and R22 as indicated by triangles in the figure.

The difference between the reflected light intensities with respect to the wavelength difference between the wavelengths λ1 and λ2 is (R22-R21), and the difference between the reflected light intensities with respect to the wavelength shift Δλ is (R11-R21). Therefore, the wavelength shift Δλ can be obtained by Δλ = (λ1−λ2) · (R11−R21) / (R22−R21) (1) Here, the stress value can be obtained by obtaining the value of R11 in advance and the relationship between the wavelength shift Δλ and the stress value in advance.

In this embodiment, since it can be obtained by measuring at two wavelengths λ1 and λ2 at one sample site, the number of wavelengths to be irradiated on the sample site can be reduced, and the stress measurement can be performed in a short time. It can be performed.

Hereinafter, sixth to eighth configuration examples corresponding to the third embodiment of the present invention will be described with reference to FIGS. FIG. 14 is a schematic block diagram for explaining a sixth configuration example of the present invention. Irradiation light of a plurality of wavelengths is irradiated from the irradiation side, and only a specific wavelength is separated by a filter or diffraction grating on the reflected light side. It is a structural example. In FIG. 14, on the irradiation light side, light of a light source 11 having a plurality of wavelengths (wavelengths λ1, λ2) is transmitted to an irradiation point P of a sample 2 arranged on a stage 7 via an optical fiber or an optical system 13 of a lens system. Irradiate. On the detection side, the reflected light reflected at the irradiation point P is wavelength-separated by a filter or a diffraction grating 46 and detected by a photodetector 41 such as a photodiode or a photomultiplier. The wavelength shift and the stress are obtained based on the following. Note that the configurations and processing operations of the modulating unit and the processing unit can be the same as those of the fifth configuration, and thus description thereof will be omitted.

FIG. 15 is a schematic block diagram for explaining a seventh configuration example of the present invention. Irradiation light of a plurality of wavelengths is radiated from the irradiation side in a time-division manner by a time division unit 18, and the reflected light is irradiated. Is a configuration example in which a detection signal is processed corresponding to the time division. In FIG. 15, the irradiation light side is an irradiation point P of the sample 2 arranged on the stage 7 via an optical fiber or an optical system 13 of a lens system while switching the light of the light source 11 having a plurality of wavelengths in a time-division manner. Irradiation. On the detection side, the light reflected at the irradiation point P is detected by a photodetector 41 such as a photodiode or a photomultiplier.
The correspondence between the intensity of the reflected light and the wavelength of the irradiation light is determined based on the time of the time division, and the wavelength shift and the stress are determined based on the relational expression such as Expression (1). Note that the configurations and processing operations of the modulating unit and the processing unit can be the same as those of the fifth configuration, and thus description thereof will be omitted.

FIG. 16 is a schematic block diagram for explaining an eighth configuration example of the present invention, in which a plurality of incident lights are irradiated on the same sample portion at different incident angles, and the reflected lights are detected at different reflection angles. This is a configuration example in which the wavelength is identified by performing the above operation. In FIG. 16, on the irradiation light side, light from the light source 11 having a plurality of wavelengths is transmitted through, for example, optical fibers arranged at different positions or optical systems 13a and 13b of lens systems.
Irradiate the irradiation point P of the sample 2 arranged on the stage 7.
On the detection side, the light reflected at the irradiation point P is reflected by a photodetector 41 such as a photodiode or a photomultiplier arranged at an angular position corresponding to each incident angle of the optical system 13.
a, 42b, the relationship between the intensity of the reflected light and the wavelength of the illuminating light is determined from the relationship between the incident angle and the reflected angle.
The wavelength shift and the stress are obtained based on the relational expressions such as.
The configuration and processing operation of the modulating means and the processing means are the same as those in the fifth embodiment.
Since the configuration can be the same as that described above, the description here is omitted.

In the above configuration example, an example is shown in which an electron beam is used as the modulating means, but other physical stimuli such as an ion beam, an electric field, light, heat, and a sound wave for changing the electron energy state of the sample portion are also provided. Can be used. FIG.
FIG. 19 is a diagram for explaining another configuration example of the modulation means.

FIG. 17 shows an example of a configuration using an electric field as the modulating means. As a configuration for applying an electric field to the sample 2, the electrode 6
4 is arranged close to the sample site, and a voltage is applied to the electrode 64 by the power supply 65 to form an electric field between the electrode 64 and the stage 7. Thereby, an electric field is applied to the sample site.

FIG. 18 shows an example of a configuration using light or heat as the modulating means. A laser light source 66 is used to apply light or heat to the sample 2, and the laser light or the heat stimulation by the laser light is applied.
FIG. 19 shows a configuration example using a sound wave as the modulating means. The ultrasonic oscillator 67 and its driving source 68 are used as a configuration for applying a sound wave to the sample 2, and the vibration of the ultrasonic oscillator 67 is transmitted to the sample portion to stimulate the sound wave. In addition, in order to transmit a sound wave to a sample portion, a configuration may be adopted in which a liquid is attached to the sample surface and the ultrasonic transducer 67 is brought into contact with the liquid.

In each of the above-described embodiments and configurations of the present invention, the stress is measured by measuring the change in the spectral pattern of the sample such as a thin film. The present invention can be applied to measurement of an internal state of a sample such as crystal characteristics including a crystal defect.

[0058]

As described above, according to the stress measuring device of the present invention, the stress of a microstructure can be measured with high spatial resolution.

[Brief description of the drawings]

FIG. 1 is a schematic diagram for explaining a first embodiment of a stress measurement device of the present invention.

FIG. 2 is a schematic diagram for explaining a second embodiment of the stress measuring device of the present invention.

FIG. 3 is a schematic diagram for explaining a third embodiment of the stress measuring device of the present invention.

FIG. 4 is a schematic diagram for explaining a wavelength shift of a reflection spectrum.

FIG. 5 is a schematic block diagram for explaining a first configuration example of the present invention.

FIG. 6 is a schematic diagram illustrating a first process for obtaining a wavelength shift according to the present invention.

FIG. 7 is a schematic diagram for explaining a second process of obtaining a wavelength shift according to the present invention.

FIG. 8 is a schematic block diagram for explaining a second configuration example of the present invention.

FIG. 9 is a schematic block diagram for explaining a third configuration example of the present invention.

FIG. 10 is a schematic block diagram for explaining a fourth configuration example of the present invention.

FIG. 11 is a schematic block diagram for explaining a fifth configuration example of the present invention.

FIG. 12 is a schematic diagram illustrating a process of obtaining a wavelength shift according to the present invention.

FIG. 13 is a schematic enlarged view for explaining a process for obtaining a wavelength shift according to the present invention.

FIG. 14 is a schematic block diagram for explaining a sixth configuration example of the present invention.

FIG. 15 is a schematic block diagram for explaining a seventh configuration example of the present invention.

FIG. 16 is a schematic block diagram for explaining an eighth configuration example of the present invention.

FIG. 17 is a schematic block diagram for explaining an electric field modulating means of the present invention.

FIG. 18 is a schematic block diagram for explaining light and heat modulating means of the present invention.

FIG. 19 is a schematic block diagram for explaining a sound wave modulating unit of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Irradiation means, 2 ... Sample, 3 ... Processing means, 4 ... Detector,
5 arithmetic device, 6 modulation means, 7 stage, 8 vacuum device, 11, 15, 16 light source, 12, 42 monochromator, 13, 15, 45 optical system, 14, 44 polarizing plate, Reference Signs List 17 switcher, 18 time divider, 41 photodetector, 46 filter, 51 preamplifier, 52 digital multimeter, 53 lock-in amplifier, 54 arithmetic unit, 61 electron beam source, 62 Beam blanking unit, 63: signal generator, 64: electrode, 65: power supply, 66
... Laser source, 67 ... Ultrasonic vibrator, 68 ... Drive source.

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Taneo Nishino 2-3-29 Seiwadai Nishi, Kawanishi-shi, Hyogo (72) Inventor Takashi Kita 20-14 Joshoji-cho, Kadoma-shi, Osaka

Claims (3)

[Claims] 1. An irradiation unit for irradiating a sample with light, and a processing unit for obtaining a stress value from a reflected light intensity pattern,
Stress measuring device. 2. A stress measuring apparatus comprising: an irradiating unit for irradiating a sample with light; a modulating unit for modulating an energy state of at least an irradiation unit on the sample; and a processing unit for obtaining a stress value from a reflected light intensity pattern. 3. The irradiating means irradiates irradiating light having at least two different wavelengths, and the processing means calculates a stress value based on a wavelength difference between the wavelengths and a reflected light intensity difference. Or the stress measuring device according to 2.