JPH11277753A - Manufacture for thermal ink-jet head - Google Patents

Abstract

PROBLEM TO BE SOLVED: To simplify a formation process when an orifice is processed by layering on a resin film a metallic layer formed on a film from which a metal can be released, bonding the metallic layer and the resin film and releasing the metal-releasable film from the metallic layer. SOLUTION: A resin film 4 having adhesive layers 3, 5 provided at both faces is formed on a silicon substrate 9. Moreover, a fluorine-based resin film 1 having a metallic film 2 is layered with the film 2 directed to the film 4. Heating and application of a predetermined pressure are carried out at not lower than a glass transition temperature of the layers 3, 5, thereby bonding an ink seal part diaphragm 6 with the film 4 by the layer 5 and the film 4 with the film 2 by the layer 3 at the same time. The film 1 present on the film 2 is released and removed. In this process, the film 4 is provided with a metallic mask to form an orifice without processing the substrate 9 in a vacuum environment, e.g. sputtering or vapor deposition.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a thermal ink jet head (liquid jet recording head).
In particular, the present invention is suitably applied to a case where the metal mask forming step for performing orifice processing is simplified.

[0002]

2. Description of the Related Art A conventional thermal ink jet head utilizes a silicon LSI process and a thin film technology,
Forming a plurality of heating elements in an array on a silicon substrate,
There is one in which an ink liquid flow path and an ink liquid discharge port (orifice) are stacked on a silicon substrate and monolithically integrated. In addition, there is a method for further integrating a drive circuit by incorporating a drive circuit on a silicon substrate on which a heating element is formed. For example, 360 dpi, 720
A thermal inkjet head in which drive circuits are individually integrated in 128 and 256 nozzles in dpi has been manufactured.

In this thermal ink jet head,
By rapidly increasing the surface temperature of the heating element formed on the silicon substrate, a film boiling phenomenon occurs on the heating element, and a film bubble is generated in the ink liquid immersing the heating element. Then, the ink liquid is pushed out from the ink liquid discharge port by the internal pressure of the film bubble, and printing is performed on the paper surface.

Hereinafter, a method for manufacturing a conventional multi-array thermal inkjet head will be described. FIG.
1), 4 (b1) and 4 (c1) are plan views showing the steps of manufacturing a conventional multi-array thermal inkjet head, and FIG. 4 (a2) is A1-A1 ′ in FIG. 4 (a1).
4 (a3) is a cross-sectional view taken along line B1-B1 ′ of FIG. 4 (a1), and FIG. 4 (b2) is a cross-sectional view taken along line A2-A2 ′ of FIG. 4 (b1). FIG. 4 is a sectional view taken along a line.
(B3) is a sectional view taken along line B2-B2 'of FIG. 4 (b1), and FIG. 4 (c2) is A3-A3' of FIG. 4 (c1).
FIG. 4 (c3) is a cross-sectional view taken along line B3-B3 ′ of FIG. 4 (c1).

[0005] In FIGS. 4 (a 1), (a 2) and (a 3), the heat generation resistance 4
An IC unit 45 for driving the LED 4 is formed on the silicon substrate 42. The heating resistors 44 are formed in an array, and the power supply common electrode 41 and the individual wiring electrodes 43 are formed. Note that Ni, Al, Cu, or the like can be used as an electrode material of the power supply common electrode 41 and the individual wiring electrode 43, and a Ta-Si-Si
O or the like can be used.

Next, FIGS. 4 (b1), (b2) and (b)
In 3), by using the thin film technology, 10 μm
An organic material such as a polyimide film having a thickness of about the same or more is laminated on the silicon substrate 42. The polyimide film is patterned using photolithography technology and dry etching technology to form an ink seal partition 41 for sealing the ink supply passage 46 and an ink seal for sealing the ink groove 52. A partition 49 and an ink partition 49 ′ serving as an ink guide are formed on the silicon substrate 42. next,
The ink supply path 46 and the ink supply hole 47 are formed by a method such as wet etching or sand blasting of the silicon substrate 42.

Next, FIGS. 4 (c1), (c2) and (c)
In 3), an orifice plate 50 having a thickness of about 20 to 40 μm is attached on the silicon substrate 42 via the ink seal part partitions 48 and 49 and the ink partition 49 ′. By sticking the orifice plate 50 onto the silicon substrate 42 via the ink seal partition walls 48 and 49 and the ink partition wall 49 ′, the ink groove 52 for guiding the ink liquid supplied from the ink supply path 46 to the heating resistor 44 is formed. It is formed.
The orifice plate 50 is coated with an epoxy resin adhesive or the like, and the orifice plate 50 can be fixed on the silicon substrate 42 with the epoxy resin adhesive. Further, as the orifice plate 50, a polyimide film or the like can be used.

Next, a thin metal film such as Al, Cu or Ni is formed on the orifice plate 50 to a thickness of about 1 to 2 μm by a method such as vapor deposition or sputtering. Next, a photoresist is applied on the orifice plate 50 on which the metal thin film is formed, and the photoresist is patterned by photolithography. The metal thin film is patterned by performing anisotropic etching such as RIE (reactive ion etching) using the patterned photoresist as a mask. Next, by using the patterned metal thin film as a mask, dry etching using ECR (Electron Cyclotron Resonance) or the like is performed to form a hole of 20 to 40 μmφ in the orifice plate 50. As a result, a large number of orifices 51 are collectively formed on the orifice plate 50.

Here, since the shape of the orifice 51 greatly affects the printing characteristics, the orifice 51 is formed utilizing the anisotropy of dry etching. On the other hand, if a photoresist is used as a mask when the orifice plate 50 is perforated, the orifice plate 50 is not used.
Is made of an organic material such as polyimide, the photoresist and the orifice plate 50 are both organic materials, and a necessary selectivity for dry etching cannot be secured. For this reason, a metal thin film is laminated on the orifice plate 50, and this metal thin film is used as a mask, thereby ensuring a necessary selection ratio when performing a drilling process on the orifice plate 50. For example, by using a metal film of Ni, Cu, Al or the like as a mask at the time of dry etching, it is possible to secure a selectivity between the resin and the metal film of about 50 to 100. As a result, by laminating a metal film having a thickness of about 1 μm to 2 μm on the polyimide film, it becomes possible to perform a drilling process on the polyimide film having a thickness of about 20 to 40 μm by dry etching.

The orifice plate 50 is connected to the silicon substrate 4
In the method of forming the orifice 51 on the orifice plate 50 in accordance with the position of the heating resistor 44 after attaching the
The positioning of the heating resistor 44 and the orifice 51 can be performed by the photolithography technique used in the silicon LSI process. Therefore, the orifice 5
The orifice plate 50 is formed with a heating resistor 4 in advance.
Compared with the method of laminating in accordance with the position 4, the positional accuracy between the heating resistor 44 and the orifice 51 can be remarkably improved, and the printing performance can be improved.

In the above steps, processing is performed in a wafer state, and thereafter, the silicon wafer is cut by a dicing saw or the like to be divided into chips. Next, a method for manufacturing a conventional one-row thermal inkjet head will be described. 5 (a1), 5 (b1), and 5 (c1) are plan views showing a manufacturing process of a conventional one-row thermal inkjet head, and FIG. 5 (a2) is a plan view of FIG.
FIG. 5B is a sectional view taken along line A4-A4 ′ of FIG.
2) is a sectional view taken along line A5-A5 ′ of FIG. 5 (b1), and FIG. 5 (c2) is a sectional view taken along line A6-A6 ′ of FIG. 5 (c1).

5 (a1) and 5 (a2), an IC section 66 for driving a heating resistor 65 and a drive circuit terminal 63 are formed on a silicon substrate 61, and a common electrode terminal 6 is formed.
2. The power supply common electrode 64 and the individual wiring electrode 64 'are formed, and the heating resistors 65 are formed in an array.

Next, in FIGS. 5 (b1) and 5 (b2), an organic material such as a polyimide film having a thickness of about 10 μm or more is laminated on the silicon substrate 61. Then, by patterning the polyimide film using a photolithography technique and a dry etching technique, the ink seal part partition walls 67 are formed on the silicon substrate 5.
1. Next, an ink supply path 68 is formed in the silicon substrate 61 by a method such as wet etching or sand blast.

Next, in FIGS. 5 (c1) and 5 (c2), an orifice plate 69 having a thickness of about 20 to 40 μm is provided.
An ink groove 71 for guiding the ink liquid supplied from the ink supply path 68 to the heating resistor 65 is formed by adhering the ink liquid to the silicon substrate 61 via the ink seal partition wall 67. Here, the interval between the ink grooves 71 is determined by the thickness of the ink seal portion partition wall 67, and is usually set to about 10 μm. Next, by performing dry etching using the patterned metal film on the orifice plate 69 as a mask, a hole of 20 to 40 μmφ is formed in the orifice plate 69, and a large number of orifices 70 are collectively formed in the orifice plate 69.

By the process shown in FIG. 5, a thermal ink jet head for one row is manufactured. In normal color printing, four rows of nozzles corresponding to each color of yellow Y, magenta M, cyan C, and black Bk are provided. Used. For this reason, a thermal inkjet head having four rows is monolithically integrated on a silicon substrate.

FIG. 6A is a plan view showing the structure of a conventional four-row thermal ink jet head after forming a wiring pattern, and FIG. 6B is the structure of the conventional four-row thermal ink jet head after orifice processing. FIG.
6A and 6B, the multi-array thermal inkjet heads 80a to 80d are provided on the silicon substrate 83 in four rows. Here, the multi-array thermal inkjet head 80a is
The multi-array thermal inkjet head 80b is used for magenta M, the multi-array thermal inkjet head 80c is used for cyan C, and the multi-array thermal inkjet head 80d is used for black Bk. .

The multi-array thermal inkjet heads 80a to 80d have common electrode terminals 81a to 82d,
Drive circuit terminals 82a-82d, power supply common electrodes 84a-8
4d, heating resistors 85a to 85d, IC units 86a to 86d
Are provided respectively. An orifice plate 87 is provided on the silicon substrate 83 on which these patterns are formed.
The orifice plate 87 has orifices 88a to 88d corresponding to the heating resistors 85a to 85d of the multi-array thermal inkjet heads 80a to 80d.
Are formed. By integrating four rows of thermal inkjet heads using semiconductor processing technology, it is possible to accurately arrange four rows of nozzles with the accuracy of mask alignment, and to improve the positional relationship of each row. Becomes possible.

[0018]

However, in the conventional method of forming a metal film on the orifice plate 50, the orifice plate 50 is adhered to the silicon substrate 42, and the orifice plate 50 is adhered to the orifice plate 50 by a method such as sputtering or vapor deposition. A metal film is formed on the substrate. For this reason, it is necessary to maintain the silicon substrate 42 to which the orifice plate 50 is attached in a high vacuum environment, which causes a problem that the apparatus becomes large-scale and the process becomes complicated. In the case where sputtering, vapor deposition, or the like is used, a metal film is formed on the entire surface of the silicon substrate 42 and, for example, the metal film is also formed on the common electrode terminal 62 and the drive circuit terminal 63 in FIG. It is necessary to cover these regions so that the metal film is not formed in these regions, and there is a problem that the process becomes complicated.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a method for manufacturing a thermal ink jet head which can simplify a manufacturing process for performing orifice processing.

[0020]

According to the present invention, a metal layer formed on a metal-peelable film is laminated on a resin film, and the metal layer and the resin film are separated from each other. And then peeling off the metal-peelable film from the metal layer.

This makes it possible to laminate the metal layer on the resin film only by placing the film on which the metal layer is formed on the resin film without using vacuum deposition or the like. The steps for laminating the layers on the top can be simplified. In addition, by forming the metal layer on the film in advance, even when the thickness of the metal layer is as thin as about 1 to 2 μm, the metal layer can be held and transported efficiently, and the The handling of the metal layer when laminating the metal layer is facilitated. Further, by using a metal-peelable film as a film for forming a metal layer, it becomes possible to easily remove an unnecessary film from the metal layer after laminating the metal layer on the resin film, thereby manufacturing The efficiency of the process can be further improved.

Further, according to one aspect of the present invention, adhesive layers are provided on both surfaces of the resin film. Thereby, for the resin film and the metal layer sequentially laminated on the ink partition wall, it becomes possible to perform the bonding of the ink partition wall and the metal layer to the resin film at once,
The manufacturing process can be further simplified.

According to one aspect of the present invention, the metal-peelable film is a fluororesin. Thus, the film can be easily peeled off from the metal layer laminated on the film, and the manufacturing process can be simplified.

According to one aspect of the present invention, a resin film having an adhesive layer formed on one surface and a metal layer formed on the other surface is laminated on the ink partition via the adhesive layer. Like that.

By this, the orifice plate can be formed and the metal layer serving as a mask for orifice processing the orifice plate can be formed at a time only by placing the resin film on which the metal layer is formed on the ink partition. This makes it possible to eliminate the need for vacuum deposition when forming a metal layer on the orifice plate, thereby simplifying the manufacturing process.

[0026]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A thermal ink jet head according to an embodiment of the present invention will be described below with reference to the drawings. FIG. 1A is a cross-sectional view showing a state in which a metal layer 2 is formed on one surface of a fluororesin film 1 according to a first embodiment of the present invention. In FIG. 1A, 100
On one side of a fluororesin film 1 such as Teflon (trade name) having a thickness of about 1 μm, a metal film 2 of Al, Ni, Cu or the like is formed to a thickness of about 1 μm to 2 μm by a method such as vapor deposition, sputtering, or electroless plating. It is laminated with the following thickness. The thickness of the metal film 2 is set according to the thickness of the resin film 4 and the selectivity between the resin film 4 and the metal film 2 during dry etching. For example, when the thickness of the resin film 4 is 40 μm and the selectivity is 50, the thickness of the metal film 2 is set to 0.8 μm or more.

FIG. 1B is a sectional view showing a state in which adhesive layers 3 and 5 are formed on both surfaces of the resin film 4. FIG.
In (b), adhesive layers 3 and 5 are provided on both surfaces of a resin film 4 serving as an orifice plate. The thickness of the resin film 2 is preferably about 20 to 40 μm, and the thickness of the adhesive layers 3 and 5 is preferably about 2 to 10 μm. In addition, polyimide or the like can be used as a material of the resin film 4, and a polyimide-based thermoplastic resin or an epoxy-based adhesive can be used as a material of the adhesive layers 3 and 5. Here, when the temperature of the polyimide-based thermoplastic material becomes equal to or higher than the glass transition temperature (Tg), the elastic coefficient rapidly decreases and the tackiness increases, so that the polyimide-based thermoplastic material can have an adhesive effect.

FIG. 1C is a cross-sectional view showing a state in which the resin film 4 and the metal film 2 are attached on a silicon substrate. In FIG. 1C, a wiring 7 for driving a heating element (not shown) is formed on a silicon substrate 9, and
An ink seal part partition wall 6 for ink seal of the ink groove 8 is formed. With respect to the silicon substrate 9 on which these patterns are formed, the adhesive layers 3, 5
Are laminated. further,
On the silicon substrate 9 on which the resin film 4 is laminated, a fluorine-based resin film 1 on which the metal film 2 of FIG. 1A is formed is laminated with the metal film 2 facing the resin film 4.

When the resin film 4 and the fluorine-based resin film 1 are laminated on the silicon substrate 9, the glass transition temperature of the adhesive layers 3 and 5 or more (for example, 200 to 250)
℃) and pressurization of several kg / cm ²
By performing the process for about 0 minutes, the adhesion between the ink seal portion partition walls 6 and the resin film 4 by the adhesive layer 5 and the adhesion between the resin film 4 and the metal film 2 by the adhesive layer 3 are performed at one time. When the bonding between the resin film 4 and the metal film 2 is performed, the fluorine-based resin film 1 existing on the metal film 2 is removed. Here, the metal film 2 with respect to the fluororesin film 1
Since the adhesiveness of the film is weak, by using the fluororesin film 1 as a film for laminating the metal film 2, the fluororesin film 1 can be removed only by peeling the fluororesin film 1 from the metal film 2. .

By the above processing, a metal mask for forming an orifice in the resin film 4 can be formed without performing processing in a vacuum environment such as sputtering or vapor deposition on the silicon substrate 9. Not only can the equipment be reduced, but also the man-hours required for production can be reduced. Further, the metal film 2 can be formed on the resin film 4 in the step of forming the ink grooves 8 between the silicon substrate 9 and the resin film 4, and the production process can be simplified.

In the embodiment shown in FIG. 1, the case where the adhesive layers 3 and 5 are provided on both surfaces of the resin film 4 shown in FIG. 1B has been described, but only the adhesive layer 5 is provided on the resin film 4.
The adhesive layer 3 provided on the resin film 4 is
(A) may be provided on the surface of the metal film 2.

FIG. 2A is a sectional view showing a state in which a metal layer is formed on one surface of a resin film serving as an orifice plate according to a second embodiment of the present invention. In FIG. 2A, adhesive layers 12 and 14 are provided on both surfaces of a resin film 13 serving as an orifice plate. The thickness of the resin film 13 is desirably about 20 to 40 μm, and the thickness of the adhesive layers 12 and 14 is desirably about 2 to 10 μm.
In addition, polyimide or the like can be used as a material of the resin film 13, and a polyimide-based thermoplastic resin or an epoxy-based adhesive can be used as a material of the adhesive layers 12 and 14. Here, the polyimide-based thermoplastic material can have an adhesive effect because the elastic coefficient sharply decreases and the tackiness increases when the temperature exceeds the glass transition temperature (Tg).

On one surface of the resin film 13 on which the adhesive layers 12 and 14 are provided, a metal film 11 of Al, Ni, Cu or the like is about 1 μm to 2 μm or less by a method such as vapor deposition, sputtering, or electroless plating. It is laminated with the thickness of. Note that, as the resin film 13, a material in which the metal film 11 is directly laminated on the resin film 13 without providing the adhesive layer 12 may be used. The thickness of the metal film 11 is set according to the thickness of the resin film 13 and the selectivity between the resin film 13 and the metal film 11 during dry etching.

FIG. 2B is a cross-sectional view showing a state in which the resin film 13 on which the metal film 11 is formed is attached on a silicon substrate 18. In FIG. 2B, a wiring 16 for driving a heating element (not shown) is formed on a silicon substrate 18, and an ink seal portion partition wall 15 for sealing an ink in an ink groove 17 is formed. With respect to the silicon substrate 18 on which these patterns are formed, FIG.
(A) A resin film 13 having a metal film 11 formed on one surface and an adhesive layer 14 formed on the other surface is laminated with the adhesive layer 14 facing the silicon substrate 18. When the resin film 13 is laminated on the silicon substrate 18, it is heated to about 200 to 250 ° C. and several kg / cm
By applying a pressure of about ² for several tens of minutes, the ink seal portion partition wall 15 and the resin film 13 are bonded with the adhesive layer 14.

According to the above-described process, the bonding process between the ink seal portion partition wall 15 and the resin film 13 is performed without performing the process on the silicon substrate 18 in a vacuum environment such as sputtering or vapor deposition. A metal mask for forming an orifice in the film 13 can be formed on the silicon substrate 18, so that not only can production equipment be reduced, but also man-hours required for production can be reduced. .

FIG. 3 is a sectional view showing an orifice processing step of the thermal ink jet head according to one embodiment of the present invention. In the following description, a case where the metal film 30 is formed on the orifice plate 29 by the method of FIG. 1 will be described. In FIG. 3A, an IC unit 31 for driving the heating resistor 26 is formed on the silicon substrate 21 by using an LSI process. Further, the heating resistors 26 are formed in an array on the silicon substrate 21, and the individual wiring electrodes 25 and the power supply common electrodes 24 are formed. here,
As the electrode material of the individual wiring electrode 25 and the power supply common electrode 24, Ni, Al, or the like can be used.
Tantalum nitride or Ta-Si-SiO
Etc. can be used. Note that, in order to prevent the heating resistor 26, the individual wiring electrode 25, and the power supply common electrode 24 from being corroded by the ink liquid, silicon oxide, silicon nitride, or the like is formed by sputtering, plasma CVD (chemical vapor deposition), or the like. May be formed on the heating resistor 26, the individual wiring electrode 25, and the power supply common electrode 24.

Next, by using thin film technology, 10
An organic material such as a polyimide film having a thickness of about μm or more is laminated on the surface of the silicon substrate 21. next,
A photoresist is applied on the polyimide film laminated on the silicon substrate 21. Then, the photoresist applied on the polyimide film is exposed using a mask in which the patterns corresponding to the ink seal portion partitions 27 and 28 and the ink partitions are formed. Next, the exposed photoresist is developed to pattern the photoresist. Next, using the patterned photoresist as a mask, the polyimide film is patterned by performing anisotropic etching such as RIE (reactive ion etching), and the ink seal portion partitions 27 and 28 and the ink partitions are formed of silicon. It is formed on a substrate 21. Next, the photoresist remaining on the polyimide film is removed by ashing or the like.

The ink seal partition walls 27 and 28 and the ink partition walls may be formed using a photosensitive dry film in addition to the polyimide film.
Ink seal partition walls 27 and 28 with photosensitive dry film
In the case where the ink partition is formed, the manufacturing process can be simplified as compared with the case where the ink seal portion partitions 27 and 28 and the ink partition are formed of a polyimide film. That is,
When a photosensitive dry film is used, the ink seal partition walls 27 and 28 and the ink partition walls can be directly formed only by performing exposure and development on the photosensitive dry film, and anisotropic etching using a photoresist as a mask. Can be omitted.

Next, an ink supply path 23 and an ink supply hole 22 are formed by a method such as wet etching or sand blasting of the silicon substrate 21. Next, 20
An orifice plate 29 having a thickness of about 40 μm is laminated on the silicon substrate 21 via the ink seal portion partitions 27 and 28 and the ink partition. Note that both surfaces of the orifice plate 29 are coated with an adhesive layer having a thickness of about 2 to 10 μm such as an epoxy resin adhesive. Also, the orifice plate 29
, A polyimide film or the like can be used.

Next, the metal film 3 having the same shape as the orifice plate 29 and formed on the fluororesin film is used.
0 is placed on the orifice plate 29. Here, the fluororesin film preferably has a thickness of about 100 μm, and the metal film 30 preferably has a thickness of about 1 to 2 μm or less. Next, the glass transition temperature of the adhesive layer coated on both surfaces of the orifice plate 29 or higher (for example, 200
(Approximately 250 ° C.) and pressurization of several kg / cm ² for several tens of minutes. As a result, at the same time as the ink seal partition walls 27 and 28 and the ink partition wall are bonded to the resin film 29, the metal film 30 is bonded to the resin film 29. When the bonding between the resin film 29 and the metal film 30 is performed, the fluorine-based resin film 1 existing on the metal film 30 is peeled off.

By the above processing, the ink groove 31 for guiding the ink liquid supplied from the ink supply path 23 to the heating resistor 26 is formed.
Is formed on the silicon substrate 21, and the metal film 30 serving as a mask for forming the orifice 36 is formed on the orifice plate 29 without performing processing on the silicon substrate 21 in a vacuum environment such as sputtering or vapor deposition. It can be formed. The metal film 30 on the orifice plate 29 may be formed using the method shown in FIG.

Next, in FIG. 3B, a photoresist 31 is applied on the orifice plate 29 on which the metal film 30 is formed by a method such as spin coating. Then, by patterning the photoresist 31 using the photolithography technique, an opening 32 having a diameter of about 20 to 40 μmφ is formed at a position of the photoresist 31 corresponding to each heating resistor 26. Next, anisotropic etching 33 such as RIE (reactive ion etching) is performed using the photoresist 31 in which the opening 32 is formed as a mask.
Is performed, an opening 34 is formed in the metal film 30.

Next, in FIG. 3C, after the photoresist 31 is removed by ashing or the like, the opening 34 is removed.
By performing dry etching 35 using ECR (Electron Cyclotron Resonance) or the like with the metal film 30 on which
Drilling of μmφ is performed. As a result, a large number of orifices 36 can be collectively formed on the orifice plate 29 as shown in FIG. Here, when a gas such as O ₂ is introduced into the ion etching using an inert gas when performing the dry etching 35, the etching rate is reduced except for the organic matter, so that the selectivity between the metal film 30 and the orifice plate 29 is reduced. Thus, the orifice plate 29 can be efficiently etched. Also, by giving anisotropy when performing the dry etching 35,
The undercut during the etching can be prevented to suppress the dimensional change, and the shape of the orifice 36 can be controlled by irradiating the ion beam from an oblique direction.

Further, by forming a protective film such as silicon oxide or silicon nitride on the IC section 31, damage to the IC section 31 when drilling the orifice plate 29 can be reduced. Note that the metal film 30 used as a mask may be left on the orifice plate 29, and the step of removing the metal film 30 may be omitted.

As described above, in the first embodiment of the present invention, a plurality of heat generating heads in which a plurality of heat generating elements are arranged in an array are provided, and the ink liquid supplied onto the heat generating elements is heated by the heat generating elements. In a method of manufacturing an ink jet head for ejecting ink droplets by generating bubbles at an interface between a liquid and a heating element, an orifice plate 29 provided with an adhesive on both surfaces and a metal film 30 formed on a fluorine-based resin film are formed. Are sequentially laminated on the silicon substrate 21, and after these are collectively pressed or heated, the fluororesin film is peeled off, so that the metal film 30 is formed on the orifice plate 29.
Is formed.

As a result, the metal film 3 is placed on the orifice plate 29.
This eliminates the need for processing in a vacuum environment such as vapor deposition or sputtering when forming 0, which not only reduces production equipment, but also reduces man-hours required for production. Also, separately from the step of bonding the orifice plate 29 to the ink seal partition walls 27 and 28 and the ink partition wall, the step of bonding the metal film 30 to the orifice plate 29 is not provided.
9, the metal film 30 can be attached to the substrate 9, and the manufacturing process can be simplified. Furthermore, since the fluororesin film is peeled off after the metal film 30 is attached to the orifice plate 29, the thickness of the metal film 30 becomes 1
Even in the case where the thickness is as small as about 2 μm or less, the handling when laminating the metal film 30 on the orifice plate 29 is facilitated, and the manufacturing process can be made more efficient.

In the second embodiment of the present invention, a plurality of heating heads in which a plurality of heating elements are arranged in an array are provided, and the ink supplied onto the heating elements is heated by the heating elements, and the ink and the heating elements are heated. In a method for manufacturing an ink jet head that ejects ink droplets by generating air bubbles at the interface of the above, an orifice plate 29 in which a metal film is formed on one surface and an adhesive layer is It adheres to the silicon substrate 21 through the intermediary.

As a result, the metal film 30 is formed when the orifice 36 is formed only by laminating the orifice plate 29 on the silicon substrate 21. Therefore, the metal film 30 is formed on the orifice plate 29 in the manufacturing process of the ink jet head. Metal film 3
The step of forming 0 is not required, so that not only the production equipment such as vacuum evaporation can be reduced, but also the man-hour required for the production can be reduced. Further, in the second embodiment, it is necessary to previously form a metal film 30 on the orifice plate 29 before laminating the orifice plate 29 on the silicon substrate 21. In this case, the metal film 30 can be formed in a film state, and the efficiency is increased as compared with the case where the metal film 30 is formed on the silicon substrate 21 in a wafer state, so that the total production cost is also reduced. It becomes possible.

In the above-described embodiment, the method in which the thermal ink jet head is formed integrally with the drive circuit on the silicon substrate has been described. However, only the thermal ink jet head is formed of a silicon substrate, a glass substrate, an alumina substrate, or the like. The same can be applied to the case where it is formed on a substrate. In the above-described embodiment, the case where the ink groove is formed by laminating the ink partition on the silicon substrate has been described. However, the present invention can be applied to the case where the ink groove is formed by etching the silicon substrate itself.

[0050]

As described above, according to the present invention,
By laminating the metal layer formed on the film on the resin film, it is possible to laminate the metal layer on the resin film without using vacuum evaporation or the like, and the thickness of the metal layer is 1 to 2 μm. Even when the metal layer is as thin as possible, the holding and transport of the metal layer can be performed efficiently, and the process of laminating the metal layer on the resin film can be simplified.

Further, by using a metal-peelable film as the film for forming the metal layer, it becomes possible to easily remove the unnecessary film from the metal layer after laminating the metal layer on the resin film. And the efficiency of the manufacturing process can be further improved.

Further, according to one aspect of the present invention, by providing an adhesive layer on both sides of a resin film, a resin film is laminated on the ink partition, and a metal layer is laminated on the resin film. Since it becomes possible to perform the adhesion of the ink partition wall and the metal layer at once,
The manufacturing process can be further simplified.

Further, according to one aspect of the present invention, by using a fluorine-based resin as a film, the film can be easily peeled off from the metal layer laminated on the film, thereby simplifying the manufacturing process. It becomes possible.

According to one aspect of the present invention, a resin film on which a metal layer is formed in advance is placed on an ink partition to form an orifice plate and to serve as a mask for orifice processing the orifice plate. The layers can be formed at one time, and the vacuum deposition for forming the metal layer on the orifice plate is not required, so that the manufacturing process can be simplified.

[Brief description of the drawings]

FIG. 1A is a cross-sectional view showing a state in which a metal layer is formed on one surface of a fluororesin film according to a first embodiment of the present invention, and FIG. 1B is a diagram showing adhesive layers formed on both surfaces of the resin film. FIG. 3C is a cross-sectional view illustrating a state in which the resin film and the metal layer are attached to a silicon substrate.

FIG. 2A is a cross-sectional view showing a state in which a metal layer is formed on one surface of a resin film having an adhesive layer on both surfaces according to a second embodiment of the present invention, and FIG. It is sectional drawing which shows the state which stuck the formed resin film on the silicon substrate.

FIG. 3 is a cross-sectional view showing an orifice processing step of the thermal inkjet head according to one embodiment of the present invention.

FIGS. 4 (a1), (b1) and (c1) are plan views showing the steps of manufacturing a conventional thermal inkjet, and FIGS.
2) is a sectional view taken along line A1-A1 'in FIG. 3 (a1), (a3) is a sectional view taken along line B1-B1' in FIG. 3 (a1), and (b2) is A2-A2 ′ of (b1)
A cross-sectional view taken along a line, (b3) is B2 in FIG. 3 (b1).
FIG. 3C is a cross-sectional view taken along line −B2 ′.
1) A cross-sectional view taken along the line A3-A3 ′, (c3)
It is sectional drawing cut | disconnected by the B3-B3 'line of FIG.3 (c1).

FIG. 5 (a1), (b1) and (c1) show conventional 1
FIG. 4A is a cross-sectional view taken along line A7-A7 ′ of FIG. 4A, and FIG. 4B2 is a cross-sectional view taken along line A7-A7 ′ of FIG.
A cross-sectional view taken along a line, (c2) is A9 in FIG. 4 (c1).
It is sectional drawing cut | disconnected by the -A9 'line.

FIG. 6A is a plan view showing a configuration after a wiring pattern of a conventional four-row thermal inkjet head is formed,
(B) is a plan view showing the configuration of the conventional four-row thermal inkjet head after orifice processing.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Fluorine resin film 2, 11, 30 Metal layer 3, 5, 12, 14 Adhesive layer 4, 13 Resin film 6, 15, 27, 28 Ink seal part partition 7, 16 Electrode 8, 17 Ink groove 9, 18, DESCRIPTION OF SYMBOLS 21 Silicon substrate 22 Ink supply hole 23 Ink supply path 24 Power supply common electrode 25 Individual wiring electrode 26 Heating resistance 29 Orifice plate 31 IC part 32 Opening 33 Orifice

Claims (3)

[Claims] A step of forming a plurality of heating elements on a substrate in an array; a step of forming ink partitions for guiding ink liquid on the substrate to the heating elements; and a resin having an adhesive layer formed on both surfaces. A step of laminating a film on the substrate via the ink partition; a step of laminating a metal layer formed on a metal-peelable film on the resin film; Bonding the metal layer to the resin film; removing the metal-peelable film from the metal layer; patterning the metal layer to form an opening at a position corresponding to the heating element in the metal layer. Forming a portion, and performing an etching using the patterned metal layer as a mask, thereby forming an opening in the resin film. Method of manufacturing a thermal ink jet head is characterized and. 2. The method according to claim 1, wherein the metal-peelable film is a fluororesin. A step of forming a plurality of heating elements in an array on the substrate; a step of forming an ink partition for guiding the ink liquid on the substrate to the heating elements; and an adhesive layer formed on one surface. Laminating a resin film having a metal layer formed on the other surface on the ink partition via the adhesive layer; and bonding the ink partition and the resin film by the adhesive layer; A step of forming an opening at a position corresponding to the heating element of the metal layer by patterning the metal layer, and performing an etching using the patterned metal layer as a mask to form an opening in the resin film. Forming a thermal inkjet head.