JPH11274584A - Layer-like high temperature superconductor specific josephson effect device and its manufacture - Google Patents
Layer-like high temperature superconductor specific josephson effect device and its manufactureInfo
- Publication number
- JPH11274584A JPH11274584A JP10073666A JP7366698A JPH11274584A JP H11274584 A JPH11274584 A JP H11274584A JP 10073666 A JP10073666 A JP 10073666A JP 7366698 A JP7366698 A JP 7366698A JP H11274584 A JPH11274584 A JP H11274584A
- Authority
- JP
- Japan
- Prior art keywords
- forming
- effect device
- temperature superconductor
- layer
- ion implantation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002887 superconductor Substances 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 230000005668 Josephson effect Effects 0.000 title claims description 20
- 238000005468 ion implantation Methods 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 11
- 239000013078 crystal Substances 0.000 claims abstract description 9
- 230000001133 acceleration Effects 0.000 claims abstract description 5
- 150000002500 ions Chemical class 0.000 description 8
- 239000010409 thin film Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000010356 wave oscillation Effects 0.000 description 1
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、層状高温超伝導体
単結晶に特有の固有ジョセフソン効果を利用した微細超
伝導体単結晶デバイス（装置）及びその製造方法に関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a fine superconductor single crystal device (apparatus) utilizing an intrinsic Josephson effect peculiar to a layered high-temperature superconductor single crystal and a method of manufacturing the same.
【０００２】[0002]
【従来の技術】従来、固有ジョセフソン効果を発現させ
るためには、層状超伝導体単結晶の積層方位に超電流を
流す必要があり、しかも実用的なデバイスとするために
は超電流経路の長さを結晶単位程度の精度で制御する必
要もある。従来のデバイスは、既存の化学的あるいは物
理的エッチング技術を用いて積層面上に微細な円盤状の
突起を加工し、円盤軸方向（積層方向に同じ）に超電流
を流すようにしていた。2. Description of the Related Art Conventionally, in order to exhibit the intrinsic Josephson effect, it is necessary to flow a supercurrent in the stacking direction of a layered superconductor single crystal. It is also necessary to control the length with an accuracy of about a crystal unit. In a conventional device, a fine disk-shaped projection is formed on a lamination surface using an existing chemical or physical etching technique, and a supercurrent is caused to flow in the disk axis direction (the same in the lamination direction).
【０００３】図３は従来の固有ジョセフソン効果装置の
断面図である。この図に示すように、従来は、メサ型の
固有ジョセフソン接合１を有する固有ジョセフソン効果
装置であった。FIG. 3 is a sectional view of a conventional intrinsic Josephson effect device. As shown in this figure, a conventional intrinsic Josephson effect device having a mesa-type intrinsic Josephson junction 1 was conventionally used.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上記し
た従来の超伝導体単結晶デバイスでは、電流経路長の精
密な制御が困難であり、またデバイスの根幹をなす円盤
状突起の機械的強度が低いという致命的な欠点があっ
た。本発明は、上記問題点を除去し、超電流経路長は、
加速電圧によって精密に制御できるとともに、電流経路
が埋め込み型となるため機械的強度の向上を図ることが
できる層状高温超伝導体固有ジョセフソン効果装置及び
その製造方法を提供することを目的とする。However, in the above-mentioned conventional superconductor single crystal device, it is difficult to precisely control the current path length, and the mechanical strength of the disk-shaped projections, which form the basis of the device, is low. There was a fatal drawback. The present invention eliminates the above problems, and the supercurrent path length is
It is an object of the present invention to provide a layered high-temperature superconductor-specific Josephson effect device and a method for manufacturing the same, which can be precisely controlled by an accelerating voltage and have a buried current path to improve mechanical strength.
【０００５】[0005]
【課題を解決するための手段】本発明は、上記目的を達
成するために、 〔１〕層状高温超伝導体固有ジョセフソン効果装置にお
いて、超伝導体単結晶内部に形成される微細な超電流経
路と、この超電流経路を埋め込むようにイオン注入によ
り形成される絶縁化層と、前記超電流経路と絶縁化層上
に形成されるエピタキシャル高温超伝導電極層とを具備
するようにしたものである。According to the present invention, in order to achieve the above object, [1] a fine supercurrent formed inside a superconductor single crystal in a layered high-temperature superconductor intrinsic Josephson effect device; A path, an insulating layer formed by ion implantation so as to bury the supercurrent path, and an epitaxial high-temperature superconducting electrode layer formed on the supercurrent path and the insulating layer. is there.
【０００６】〔２〕層状高温超伝導体固有ジョセフソン
効果装置の製造方法において、層状高温超伝導体を形成
する工程と、この層状高温超伝導体の上面に固有ジョセ
フソン接合を形成するための島状のマスクを形成する工
程と、イオン注入により絶縁化層を形成する工程と、前
記島状のマスクを除去し、エピタキシャル高温超伝導電
極層を形成する工程とを施すようにしたものである。[2] In a method of manufacturing a layered high-temperature superconductor intrinsic Josephson effect device, a step of forming a layered high-temperature superconductor and a step of forming an intrinsic Josephson junction on an upper surface of the layered high-temperature superconductor are performed. A step of forming an island-shaped mask, a step of forming an insulating layer by ion implantation, and a step of removing the island-shaped mask to form an epitaxial high-temperature superconducting electrode layer. .
【０００７】〔３〕上記請求項〔２〕記載の層状高温超
伝導体固有ジョセフソン効果装置の製造方法において、
前記イオン注入にあたり、加速電圧によって前記超電流
経路長を制御するようにしたものである。このように、
本発明によれば、ある種のイオンを注入することによ
り、高温超伝導体が常伝導化・絶縁化する性質を利用
し、立体的に加工することなく超伝導体単結晶内部に微
細な超電流経路を形成する。[3] The method for manufacturing a layered high-temperature superconductor intrinsic Josephson effect device according to the above [2],
In the ion implantation, the supercurrent path length is controlled by an acceleration voltage. in this way,
According to the present invention, by injecting certain kinds of ions, a high-temperature superconductor becomes a normal conductor and is insulated. Form a current path.
【０００８】これによって、イオンの到達深さによって
決まる超電流経路長を、加速電圧によって精密に制御す
ることができ、また電流経路が埋め込み型となるため、
機械的強度が飛躍的に向上する。さらに、イオン注入に
より形成される絶縁化層上に高温超伝導薄膜をエピタキ
シャル成長させることにより、従来のメサ型接合では不
可能であった超伝導電極の取り出しが可能となる。Accordingly, the length of the supercurrent path determined by the ion arrival depth can be precisely controlled by the accelerating voltage, and the current path becomes a buried type.
The mechanical strength is dramatically improved. Furthermore, by epitaxially growing a high-temperature superconducting thin film on an insulating layer formed by ion implantation, it is possible to take out a superconducting electrode which was impossible with a conventional mesa-type junction.
【０００９】[0009]
【発明の実施の形態】以下、本発明の実施の形態につい
て詳細に説明する。図１は本発明の実施例を示すイオン
注入による埋め込み型固有ジョセフソン効果装置の断面
図である。この図において、１１は層状高温超伝導体、
１４はイオン注入により形成される絶縁化層、１５は微
細な超電流経路、１６はエピタキシャル高温超伝導電極
層である。Embodiments of the present invention will be described below in detail. FIG. 1 is a sectional view of an embedded intrinsic Josephson effect device by ion implantation showing an embodiment of the present invention. In this figure, 11 is a layered high-temperature superconductor,
Reference numeral 14 denotes an insulating layer formed by ion implantation, 15 denotes a fine supercurrent path, and 16 denotes an epitaxial high-temperature superconducting electrode layer.
【００１０】次に、本発明の実施例を示すイオン注入に
よる埋め込み型固有ジョセフソン効果装置の製造方法に
ついて説明する。図２は本発明の実施例を示すイオン注
入による埋め込み型固有ジョセフソン効果装置の製造工
程断面図である。 （１）まず、図２（ａ）に示すように、層状高温超伝導
体（例えば、Ｂｉ2 Ｓｒ2 Ｃａ1 Ｃｕ2 Ｏｙ）１１を用
意する。Next, a method of manufacturing an embedded intrinsic Josephson effect device by ion implantation according to an embodiment of the present invention will be described. FIG. 2 is a cross-sectional view illustrating a process of manufacturing an embedded intrinsic Josephson effect device by ion implantation according to an embodiment of the present invention. (1) First, as shown in FIG. 2A, a layered high-temperature superconductor (for example, Bi 2 Sr 2 Ca 1 Cu 2 Oy) 11 is prepared.
【００１１】（２）次に、図２（ｂ）に示すように、そ
の層状高温超伝導体１１の表面側にレジスト（図示な
し）を塗布して、微細なレジストパターン１２を形成す
る。 （３）次に、図２（ｃ）に示すように、注入イオンとし
て、シリコン（Ｓｉ）又は硼素（Ｂ）イオン１３を加速
電圧２０〜１００ｋＶ、注入量１〜４×１０16ｉｏｎｓ
／ｃｍ2 でイオン注入を行い、そのイオン注入により絶
縁化層１４を形成する。すると、微細な超電流経路１５
を形成することができる。(2) Next, as shown in FIG. 2B, a resist (not shown) is applied to the surface side of the layered high-temperature superconductor 11 to form a fine resist pattern 12. (3) Next, as shown in FIG. 2C, silicon (Si) or boron (B) ions 13 are implanted ions at an acceleration voltage of 20 to 100 kV and an implantation amount of 1 to 4 × 10 16 ions.
/ Cm 2 , and the insulating layer 14 is formed by the ion implantation. Then, the fine supercurrent path 15
Can be formed.
【００１２】（４）次に、図２（ｄ）に示すように、微
細なレジストパターン１２をエッチングにより、層状高
温超伝導体１１の表面側から除去する。 （５）次に、図２（ｅ）に示すように、層状高温超伝導
体１１の表面側の全面、つまり、微細な超電流経路１５
及びイオン注入により形成される絶縁化層１４上に、高
温超伝導薄膜をエピタキシャル成長させることにより、
高温超伝導電極層１６を形成する。(4) Next, as shown in FIG. 2D, the fine resist pattern 12 is removed from the surface of the layered high-temperature superconductor 11 by etching. (5) Next, as shown in FIG. 2E, the entire surface on the surface side of the layered high-temperature superconductor 11, that is, the fine supercurrent path 15
And by epitaxially growing a high-temperature superconducting thin film on the insulating layer 14 formed by ion implantation,
A high-temperature superconducting electrode layer 16 is formed.
【００１３】このように、本発明によれば、固有ジョセ
フソン効果素子の実用化を図ることができ、ダメージフ
リーの微細加工技術を用いることにより、イオンの到達
深さによって決まる超電流経路長は、注入時の加速電圧
によって精密に制御でき、また電流経路が埋め込み型と
なるため機械的強度が飛躍的に向上する。さらに、微細
な超電流経路及びイオン注入により形成される絶縁化層
上に高温超伝導薄膜をエピタキシャル成長させることに
より、従来のメサ型接合では不可能であった超伝導電極
の取り出しが可能となる。As described above, according to the present invention, the intrinsic Josephson effect element can be put to practical use, and by using a damage-free microfabrication technique, the supercurrent path length determined by the ion arrival depth can be reduced. It can be precisely controlled by the accelerating voltage at the time of injection, and the current path is buried, so that the mechanical strength is dramatically improved. Furthermore, by epitaxially growing a high-temperature superconducting thin film on a fine supercurrent path and an insulating layer formed by ion implantation, it is possible to take out a superconducting electrode which was impossible with a conventional mesa-type junction.
【００１４】本発明は、テラヘルツ帯電磁波発振・検出
素子、ジョセフソン電圧標準や高温超伝導集積回路化を
展開することができる。従来のジョセフソン電圧標準
は、液体ヘリウムを必要とし、標準電圧も低いのに対
し、高温超伝導ジョセフソン電圧標準は、液体窒素で動
作可能である。なお、本発明は上記実施例に限定される
ものではなく、本発明の趣旨に基づいて種々の変形が可
能であり、これらを本発明の範囲から排除するものでは
ない。According to the present invention, a terahertz band electromagnetic wave oscillation / detection element, a Josephson voltage standard, and a high-temperature superconducting integrated circuit can be developed. The conventional Josephson voltage standard requires liquid helium and has a lower standard voltage, whereas the high-temperature superconducting Josephson voltage standard can operate with liquid nitrogen. It should be noted that the present invention is not limited to the above embodiment, and various modifications can be made based on the gist of the present invention, and these are not excluded from the scope of the present invention.
【００１５】[0015]
【発明の効果】以上、詳細に説明したように、本発明に
よれば、以下のような効果を奏することができる。 （１）請求項１記載の発明によれば、電流経路が埋め込
み型となるため、機械的強度の大幅な向上を図ることが
できる。As described above, according to the present invention, the following effects can be obtained. (1) According to the first aspect of the present invention, since the current path is of a buried type, the mechanical strength can be greatly improved.
【００１６】（２）請求項２記載の発明によれば、高温
超伝導体が常伝導化・絶縁化する性質を利用し、従来の
ように立体的に加工することなく、超伝導体単結晶内部
に微細な超電流経路を形成することができる。また、微
細な超電流経路及びイオン注入により形成される絶縁化
層上に、高温超伝導薄膜をエピタキシャル成長させるこ
とにより、従来のメサ型接合では不可能であった超伝導
電極の取り出しが可能となる。(2) According to the second aspect of the present invention, the single crystal of the superconductor is utilized without using the conventional three-dimensional processing by utilizing the property that the high-temperature superconductor is made normal and insulating. A fine supercurrent path can be formed inside. In addition, by epitaxially growing a high-temperature superconducting thin film on an insulating layer formed by fine supercurrent paths and ion implantation, it is possible to take out a superconducting electrode which was impossible with a conventional mesa-type junction. .
【００１７】（３）請求項３記載の発明によれば、イオ
ンの到達深さによって決まる超電流経路長は、加速電圧
によって精密に制御することができる。(3) According to the third aspect of the invention, the supercurrent path length determined by the ion arrival depth can be precisely controlled by the acceleration voltage.
【図１】本発明の実施例を示すイオン注入による埋め込
み型固有ジョセフソン効果装置の断面図である。FIG. 1 is a cross-sectional view of a buried intrinsic Josephson effect device by ion implantation showing an embodiment of the present invention.
【図２】本発明の実施例を示すイオン注入による埋め込
み型固有ジョセフソン効果装置の製造工程断面図であ
る。FIG. 2 is a cross-sectional view illustrating a process of manufacturing an embedded intrinsic Josephson effect device by ion implantation according to an embodiment of the present invention.
【図３】従来の固有ジョセフソン効果装置の断面図であ
る。FIG. 3 is a sectional view of a conventional intrinsic Josephson effect device.
１１ 層状高温超伝導体（例えば、Ｂｉ2 Ｓｒ2 Ｃａ
1 Ｃｕ2 Ｏｙ） １２ 微細なレジストパターン １３ シリコン（Ｓｉ）又は硼素（Ｂ）イオン １４ イオン注入により形成される絶縁化層 １５ 微細な超電流経路 １６ エピタキシャル高温超伝導電極層11 Layered high-temperature superconductor (for example, Bi 2 Sr 2 Ca
1 Cu 2 Oy) 12 Fine resist pattern 13 Silicon (Si) or boron (B) ion 14 Insulating layer formed by ion implantation 15 Fine supercurrent path 16 Epitaxial high temperature superconducting electrode layer
Claims (3)
細な超電流経路と、（ｂ）該超電流経路を埋め込むよう
にイオン注入により形成される絶縁化層と、（ｃ）前記
超電流経路と絶縁化層上に形成されるエピタキシャル高
温超伝導電極層とを具備することを特徴とする層状高温
超伝導体固有ジョセフソン効果装置。(A) a fine supercurrent path formed inside a superconductor single crystal; (b) an insulating layer formed by ion implantation so as to bury the supercurrent path; and (c). A layered high-temperature superconductor-specific Josephson effect device, comprising the supercurrent path and an epitaxial high-temperature superconducting electrode layer formed on an insulating layer.
と、（ｂ）該層状高温超伝導体の上面に固有ジョセフソ
ン接合を形成するための島状のマスクを形成する工程
と、（ｃ）イオン注入により絶縁化層を形成する工程
と、（ｄ）前記島状のマスクを除去し、エピタキシャル
高温超伝導電極層を形成する工程とを施すことを特徴と
する層状高温超伝導体固有ジョセフソン効果装置の製造
方法。2. A step of (a) forming a layered high-temperature superconductor, and (b) a step of forming an island-shaped mask for forming an intrinsic Josephson junction on the upper surface of the layered high-temperature superconductor. (C) forming an insulating layer by ion implantation and (d) removing the island-shaped mask to form an epitaxial high-temperature superconducting electrode layer. A method for manufacturing a unique Josephson effect device.
ョセフソン効果装置の製造方法において、前記イオン注
入にあたり、加速電圧によって前記超電流経路長を制御
することを特徴とする層状高温超伝導体固有ジョセフソ
ン効果装置の製造方法。3. The method of manufacturing a layered high-temperature superconductor-specific Josephson effect device according to claim 2, wherein, during the ion implantation, the supercurrent path length is controlled by an acceleration voltage. Manufacturing method of body-specific Josephson effect device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10073666A JPH11274584A (en) | 1998-03-23 | 1998-03-23 | Layer-like high temperature superconductor specific josephson effect device and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10073666A JPH11274584A (en) | 1998-03-23 | 1998-03-23 | Layer-like high temperature superconductor specific josephson effect device and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11274584A true JPH11274584A (en) | 1999-10-08 |
Family
ID=13524813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10073666A Pending JPH11274584A (en) | 1998-03-23 | 1998-03-23 | Layer-like high temperature superconductor specific josephson effect device and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11274584A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005353787A (en) * | 2004-06-10 | 2005-12-22 | National Institute Of Information & Communication Technology | Mesa type superconducting element and its manufacturing method |
| JP2010232500A (en) * | 2009-03-27 | 2010-10-14 | National Institute For Materials Science | Simple method for producing intrinsic josephson tunnel device |
-
1998
- 1998-03-23 JP JP10073666A patent/JPH11274584A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005353787A (en) * | 2004-06-10 | 2005-12-22 | National Institute Of Information & Communication Technology | Mesa type superconducting element and its manufacturing method |
| JP2010232500A (en) * | 2009-03-27 | 2010-10-14 | National Institute For Materials Science | Simple method for producing intrinsic josephson tunnel device |
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