JPH11274044A - Machining method by charged beam and machining system thereof, and observation method and system by the charged beam - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable analysis of improper analyses, maintenance, specification assessment through a microscopic machining at high accuracy. By specifying an irradiating region for charged beam based upon a relating distance between a standard mark measured at an optical measuring step and charged beam, and by performing micro machining in a high precision by having a specified irritating region irradiated with a charged beam machining to. SOLUTION: Making and measuring device for a standard mark consist is of an XYZθ table 26 on which a semiconductor device 100 is mounted, an applying device 230 which applies a trace liquid material 10 to a local part on a surface of the semiconductor device 100, and a heating means 220 which is hardened with the trace material 10 applied by the applying device 230 through heating. Next a two dimensional distance between a microscopic standard mark 11 and a portion 1 to be machined based upon an optical image which is observed or detected is calculated, and additionally a pipette 21, as an applying device 230 or a position alignment mark which is formed at a positioning pin terminal and on the surface of the semiconductor device 100, is detected. Furthermore, these are controlled by an using optical microscope 210 and a controller 210.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a charged beam (charged particle beam) such as a focused ion beam for the purpose of failure analysis, repair, characteristic evaluation, etc., which are particularly suitable for a semiconductor device or the like subjected to planarization processing. The present invention relates to a processing method and a processing system thereof, an observation method using a charged beam (charged particle beam) such as an electron beam, and an observation system thereof.

[0002]

2. Description of the Related Art In a semiconductor device in which the density is increased due to miniaturization and multilayering of wiring and the like, it is possible to cut or connect an arbitrary wiring to quickly perform failure analysis and partial repair. Has a great effect. As a conventional technology that makes this possible, for example, “Monthly Semico”
nductor World, September 1987, pages 27-32 (Focused).
A method of processing and film formation using Ion Beam (hereinafter abbreviated as FIB) is known. Among the processing by the charged beam, for example, the FIB processing is an application of a sputtering action by the FIB.

First, an ion beam extracted from an ion source such as Ga is focused and irradiated onto a semiconductor device placed in a vacuum by an electrostatic lens to a spot diameter of 0.5 μm or less, and is two-dimensionally deflected by a deflector. Scan. As a result, secondary electrons and secondary ions are generated from the surface of the semiconductor device. This secondary electron or secondary ion is detected by a detector, and a scanning ion microscope image (hereinafter, SIM (= Scanning IonMic)) is displayed on a CRT with a luminance modulation signal corresponding to the detected intensity in synchronization with the above-mentioned scanning similarly to the scanning electron microscope.
roscopy). Therefore, this SIM image reflects the surface shape of the semiconductor device as in the case of the scanning electron microscope. The resolution depends on the spot diameter of the FIB to be irradiated, and the smaller the spot diameter, the finer the surface condition can be.

An operator first searches for a specific pattern such as an alignment mark in a semiconductor device in a SIM image. Next, the stage on which the semiconductor device is mounted is moved from the specific pattern to the processing position based on the coordinate data, and the processing position is set while observing the SIM image again. After setting the processing position, the processing dimensions (= FIB scanning area) are set, and the FIB is irradiated for a predetermined time or while observing the change in the secondary electrons or secondary ions. By this FIB irradiation, the protective film / interlayer insulating film and Al
The wiring is sequentially removed by sputtering from the surface, and processing such as opening a connection window and cutting the wiring is performed.

On the other hand, the film is formed by a chemical vapor deposition method (Chemi).
cal Vapor Deposition: Hereinafter, C
(Abbreviated as VD), and FIB is used as an energy source for the decomposition of CVD gas, which is also called FIB-CVD. This method, after alignment by the above method,
A film formation area (= FIB scanning area) is set. Then
CV by spraying CVD gas onto semiconductor device from nozzle
A D gas atmosphere is formed, and FIB is irradiated and scanned for a predetermined time. Thus, the CVD gas adsorbed on the surface of the semiconductor device is decomposed, and a film of metal or the like is formed, whereby the film is formed.
In the prior art, the FIB processing and the FIB-CV
D is an ECL gate array or 1MDRAM with a two-layer wiring structure
It has been applied to the evaluation of electrical characteristics of, and its usefulness has been stated.

[0006]

By the way, the wiring structure of a recent semiconductor device has become finer and more multilayered. In order to realize this complicated wiring structure, CM
P (= Chemical & Mechanical P
Each interlayer insulating film is subjected to a flattening process using a technique such as polishing (mechanochemical polishing).
Therefore, only the uppermost wiring pattern is reflected as a step on the protective film of the semiconductor device. For example, when a SIM image is observed in a FIB processing apparatus, the step of the protective film reflecting only the uppermost wiring pattern is not reflected. You will not be able to see it. Therefore, for example, in a FIB processing apparatus, when positioning is performed by moving a stage on which a semiconductor device is mounted based on coordinate data from an alignment mark or the like formed on the surface of a protective film of the semiconductor device,
A positional shift occurs due to a shift between respective wiring layers, a tilt on a plane of the semiconductor device, a variation in stage accuracy, and the like, and even when observed with a SIM image, a lower layer of the interlayer insulating film can be specified as a processing target. And as a result, F
High-precision fine processing by IB becomes impossible.

[0007] An object of the present invention is to solve the above problems.
For a semiconductor device having a multi-layer wiring layer having an interlayer insulating film subjected to a planarization process and almost completed so that an operation test can be performed, an FI is applied to a lower layer of the interlayer insulating film as a processing target.
It is an object of the present invention to provide a charged beam processing method and a processing system capable of performing fine processing with a charged beam (charged particle beam) such as B with high precision to realize failure analysis, repair, characteristic evaluation, and the like. Another object of the present invention is to make it easy to find an observation position by a charged beam (charged particle beam) such as an electron beam on an object on which a fine and complicated pattern is formed on a surface, and It is an object of the present invention to provide a charged beam observation method and an observation system capable of substantially shortening a beam operation time.

[0008]

In order to achieve the above object, the present invention provides a reference mark on a top surface of a sample which can be observed by using light and charged particles at a processing position of a charged beam (charged particle beam). An optical image including a reference mark providing step to be provided in the vicinity of the reference mark and a processing position of the charged beam on the top surface of the sample provided in the reference mark providing step is captured by an optical microscope. An optical measuring step of measuring a relative distance between a reference mark and a processing position of the charged beam based on the optical image, and irradiating the reference mark on the uppermost surface of the sample provided in the reference mark applying step with a charged beam, and The secondary charged particle image of the mark is detected, and the reference mark and the charged beam measured in the optical measurement step are added to the detected secondary charged particle image of the reference mark. A processing step of specifying an irradiation area of the charged beam based on the relative distance to the position and irradiating the specified irradiation area with the charged beam to perform processing. . Further, according to the present invention, a reference mark observable using light and charged particles is formed on a protective film surface of a semiconductor device including a multilayer wiring layer having a planarized interlayer insulating film by using a charged beam (charged particle beam). A reference mark providing step to be provided in the vicinity of the irradiation position, and an optical image including a reference mark on the protective film surface of the semiconductor device provided in the reference mark providing step and a processing position of the charged beam, taken by an optical microscope, An optical measurement step of measuring a relative distance between the reference mark and the processing position of the charged beam based on the captured optical image; and a charge beam applied to the reference mark on the protective film surface of the semiconductor device provided in the reference mark providing step. To detect a secondary charged particle image of the reference mark, and the secondary charged particle image of the detected reference mark is measured in the optical measurement step. A processing step of specifying an irradiation area of the charged beam based on a relative distance between the quasi-mark and a processing position of the charged beam, and irradiating the specified irradiation area with the charged beam to perform processing. This is a processing method using a charged beam.

Further, the present invention is characterized in that in the processing method using the charged beam, the semiconductor device is almost completed so that an operation test can be performed. Further, in the present invention, in the reference mark applying step in the processing method using the charged beam, a minute amount of a liquid material (for example, a metal complex solution or a metal fine particle dispersion) is locally applied, and heated and fired to apply the reference mark. It is characterized by the following. Further, in the present invention, in the reference mark applying step in the processing method using the charged beam, a small amount of a liquid material (for example, a metal complex solution or a metal fine particle dispersion) is locally applied, heated and baked, and this heated and baked. It is characterized in that a removal mark obtained by irradiating a part of the film with an energy beam, for example, a laser beam is used as a reference mark.

In the present invention, the reference mark provided in the reference mark providing step in the processing method using the charged beam may be a metal or metal oxide film, a silicon compound or a mixture of a silicon compound and a dye or a semiconductor impurity. Characterized by comprising any of the following.
Further, in the present invention, in the reference mark applying step in the processing method using the charged beam, a local film formed of any of a metal or a metal oxide film or a silicon compound or a mixture of a silicon compound and a dye or a semiconductor impurity is formed. The removal mark obtained by irradiating a part of the local film with an energy beam such as a laser beam is used as a reference mark.
The present invention also provides a reference mark providing step of providing a reference mark observable using light and charged particles near the irradiation position of a charged beam on the uppermost surface of a sample, and the reference mark providing step. An optical image including the reference mark on the uppermost surface of the sample and the irradiation position of the charged beam is captured by an optical microscope, and the relative distance between the reference mark and the irradiation position of the charged beam is measured based on the captured optical image. An optical measuring step, and irradiating the reference mark on the uppermost surface of the sample provided in the reference mark applying step with a charged beam to detect a secondary charged particle image of the reference mark; For the charged particle image, the irradiation area of the charged beam is specified based on the relative distance between the reference mark measured in the optical measurement step and the irradiation position of the charged beam. An observation method according to the charged beam; and a observation step of observing the secondary charged particle image obtained by the charged particle beam to the irradiation area from the irradiating the irradiation region.

Further, in the present invention, in the reference mark applying step in the charged beam observation method, a small amount of a liquid material (for example, a metal complex solution or a metal fine particle dispersion) is locally applied, and the applied material is heated and fired to perform the reference mark. Is provided. Further, in the present invention, in the reference mark providing step in the charged beam observation method, a minute amount of a liquid material (for example, a metal complex solution or a metal fine particle dispersion) is locally applied, heated and baked, and this heated and baked. It is characterized in that a removal mark obtained by irradiating a part of the film with an energy beam, for example, a laser beam, is used as a reference mark. Also,
In the present invention, in the reference mark providing step in the charged beam observation method, the reference mark to be provided is made of a metal, a metal oxide film, a silicon compound, or a mixture of a silicon compound and a dye or a semiconductor impurity. It is characterized by.

Further, the present invention provides a reference mark providing apparatus for providing a reference mark observable by using light and charged particles on the uppermost surface of a sample near a processing position of a charged beam, and a reference mark providing apparatus. An optical microscope that captures an optical image including a reference mark on the top surface of the sample and a processing position of the charged beam, and a reference mark and a processing position of the charged beam based on the optical image captured by the optical microscope. An optical measuring device having measuring means for measuring a relative distance of the sample, and a charged beam is applied to the reference mark on the uppermost surface of the sample provided by the reference mark providing device to detect a secondary charged particle image of the reference mark. The secondary mark image of the detected reference mark, the reference mark measured by the measuring means of the optical measuring device and the processing position of the charged beam Identify irradiation area of the charged particle beam based on vs. distance, a processing system by the charged beam; and a said a specified charged beam irradiation area subjected to processing by irradiating a charged beam processing apparatus. Also,
According to the present invention, a reference mark that can be observed using light and charged particles is provided on a protective film surface of a semiconductor device including a multilayer wiring layer having a planarized interlayer insulating film near an irradiation position of a charged beam. A reference mark providing device, an optical microscope that captures an optical image including a reference mark on the protective film surface of the semiconductor device provided by the reference mark providing device and a processing position of the charged beam, and an image captured by the optical microscope. An optical measuring device having measuring means for measuring a relative distance between the reference mark and the processing position of the charged beam based on the optical image; and a charged beam on the reference mark on the protective film surface of the semiconductor device provided by the reference mark providing device. To detect a secondary charged particle image of the fiducial mark. The detected secondary charged particle image of the fiducial mark is Beam processing apparatus that specifies an irradiation area of a charged beam based on a relative distance between a reference mark measured by a determining unit and a processing position of the charged beam, and irradiates the specified irradiation area with the charged beam to perform processing. And a processing system using a charged beam.

Further, the present invention is characterized in that in the processing system using the charged beam, the semiconductor device is almost completed so that an operation test can be performed. Further, in the present invention, in the processing system using the charged beam, the reference mark applying device includes a coating unit configured to locally apply a small amount of liquid material, and a heating unit configured to heat and bake the small amount of liquid material applied by the coating unit. And characterized in that: Further, according to the present invention, in the processing system using the charged beam, the heating unit is configured by a laser beam irradiation unit that can perform removal processing. Further, the present invention provides a reference mark providing apparatus for providing a reference mark observable using light and charged particles near the irradiation position of a charged beam on the uppermost surface of a sample, and the reference mark providing apparatus. An optical microscope that captures an optical image including a reference mark on the top surface of the sample and an irradiation position of the charged beam, and a relative distance between the reference mark and the irradiation position of the charged beam based on the optical image captured by the optical microscope An optical measuring device having measuring means for measuring
The reference mark on the uppermost surface of the sample provided by the reference mark providing device is irradiated with a charged beam to detect a secondary charged particle image of the reference mark, and a secondary charged particle image of the detected reference mark is detected. The irradiation area of the charged beam is specified based on the relative distance between the reference mark measured by the measuring means of the optical measurement device and the irradiation position of the charged beam, and the specified irradiation area is irradiated with the charged beam. A charged beam observation system for observing a secondary charged particle image obtained from an irradiation area.

Further, in the present invention, the reference mark providing device in the charged beam observation system comprises a coating means for locally applying a small amount of a liquid material (for example, a metal complex solution or a metal fine particle dispersion), and the coating means. And heating means for heating and firing the applied minute amount of liquid material. Further, the present invention is characterized in that a part of a sample or a film formed on the uppermost surface of a semiconductor device is removed using a laser beam or a charged beam, and an obtained removal mark is used as a reference mark. The present invention also provides a charged beam optical system in one processing chamber, a microscope using light having a length measuring function, and a stage for mounting a sample in the processing chamber, and an objective lens of the microscope. A charged beam irradiation apparatus characterized by comprising: Also, the present invention
The same vacuum chamber in a charged beam device consisting of a charged beam optical system, a microscope having a length measuring function using light, a vacuum chamber, a vacuum evacuation system, a vibration isolator, a stage for mounting a sample, a power supply, a controller, and a display device A charged beam optical system including the charged beam optical system and the microscope therein.

The present invention also relates to a charged beam apparatus comprising a charged beam optical system, a microscope having a length measuring function using light, a vacuum chamber, a stage on which a sample is mounted, and a display device. Charged beam optics,
A storage device equipped with the microscope, for inputting and storing an image from the microscope, and an image processing function for measuring coordinates in the image of a specific position of a pattern formed on the sample from the stored image And a processing device for controlling the charged beam optical system in accordance with the measured value.

The present invention also relates to a charged beam apparatus comprising a charged beam optical system, a microscope having a length measuring function using light, a vacuum chamber, a vacuum exhaust system, a stage on which a sample is mounted, and a display device. A storage device equipped with the charged beam optical system and the microscope in a chamber, for inputting and storing an image from the microscope, and an image of a specific position of a pattern formed on the sample from the stored image A processing device having an image processing function for measuring coordinates in the apparatus, a processing device for controlling the charged beam optical system according to the measured values, and a storage device for externally inputting and storing layout data of the sample to the controller A display device for displaying one or more of the microscope image, the surface unevenness image of the sample by the charged beam, and the layout image formed from the layout data. A charged particle beam apparatus characterized by the. Further, the present invention provides a charged beam optical system, a microscope having a length measuring function using light, a vacuum chamber, a vacuum exhaust system, a stage on which a sample is placed, and a charged beam apparatus including a display device, wherein A storage device equipped with the charged beam optical system and the microscope, for inputting and storing an image from the microscope, a display device for displaying the microscope image, and a display device for displaying the charged beam specified on the display device. A storage device for storing an irradiation position, a display device for displaying an uneven image of the sample surface by the charged beam, a storage device for storing a specific position of the sample surface specified on the display device, and the charged beam irradiation position And a processing device for calculating a positional relationship between the charged beam optical system and the specific position, and a processing device for controlling the charged beam optical system according to the calculated value.

The present invention also relates to a charged beam apparatus comprising a charged beam optical system, a microscope having a length measuring function using light, a vacuum chamber, a vacuum exhaust system, a stage on which a sample is mounted, and a display device. The charged beam optical system in the chamber, equipped with the microscope, a storage device for inputting and storing an image from the microscope, an image processing device for measuring the coordinates in the image of a specific pattern in the image, A display device for displaying the microscope image, a storage device for storing an irradiation position of the charged beam specified on the display device, a display device for displaying a concavo-convex image of a sample surface by the charged beam, An image processing device that measures coordinates in the image of the specific pattern, a storage device that stores the specific position, and a processing device that calculates a positional relationship between the stored charged beam irradiation position and the measured specific position. When a charged particle beam apparatus characterized by equipped with processing apparatus for controlling the charged beam optical system in accordance with the calculated value.

As described above, according to the above configuration,
For a semiconductor device having a multi-layer wiring layer having an interlayer insulating film subjected to a planarization process and almost completed so that an operation test can be performed, an FI is applied to a lower layer of the interlayer insulating film as a processing target.
Fine processing with a charged beam (charged particle beam) such as B can be performed with high accuracy to realize failure analysis, repair, characteristic evaluation, and the like. Further, according to the above configuration, it is easy to find an observation position by a charged beam (charged particle beam) such as an electron beam for an object on which a fine and complicated pattern is formed on the surface. Most of the operation time can be reduced.

[0019]

Embodiments of the present invention will be described with reference to the drawings. First, the principle according to the present invention will be described. Higher density has been achieved by miniaturization and multi-layering of wiring, etc., and arbitrary wiring has been cut or any wiring has been connected to a semiconductor device (IC element) that has been almost completed so that an operation test can be performed with a tester. There is a demand for shortening the development period by performing a failure analysis, a partial repair, a characteristic evaluation, and the like by performing SIM or SEM observation on a cross section obtained by forming a large opening at a defective portion. In addition, in semiconductor devices and the like, with the increase in integration, adhesion of minute foreign matter on the order of sub-micron by a process device has become a problem, and Auger spectral analysis using an electron beam and SIM analysis using an ion beam have been performed on the fine foreign matter. It is necessary to determine the cause (generation process) of the generation of the minute foreign matter by performing elemental analysis in the above manner. However, when the minute foreign matter is not exposed, it is necessary to remove and expose the film covering the minute foreign matter using FIB (Focused Ion Beam).

Further, the wiring structure of a recent semiconductor device (IC element) has been becoming finer and multilayered.
To realize this complicated wiring structure, CM
Each interlayer insulating film is subjected to a flattening process using a P (Chemical & Mechanical Polishing) technique or the like, and as shown in FIG. 1, a protective film 105 on the surface of a substantially completed semiconductor device (IC element). Is reflected only in the uppermost wiring pattern 103d. FIG.
(A) shows a cross section of an embodiment of an almost completed semiconductor device (IC element) that can be tested for operation by a tester. 101 is a substrate of Si or the like, 102 is the substrate 10
1 is an oxide film formed thereon. On top of that, the wiring patterns 103a, 103 of Al and the like from the first layer to the third layer are formed.
b, 103c, and 103d and interlayer insulating films 104a, 104b, and 104c planarized by a CMP technique or the like are formed, and a protective film 105 is formed on the surface thereof. Thus, the upper surfaces of the interlayer insulating films 104a, 104b, 104c
Since the surface is flattened by CMP technology or the like, the protective film 1 on the surface is formed.
05 reflects only the uppermost wiring pattern 103d. Therefore, the semiconductor device 1 having such a structure
As shown in FIG. 1B, the SIM image 38 of step 00 shows the step pattern 10 indicating the information of the uppermost Al wiring 103d.
Only 9 will be obtained. Therefore, when performing the FIB processing, it is not possible to perform high-precision processing positioning on the lower wiring patterns 103a, 103b, and 103c such as Al while watching the SIM image 38. The reason for this is that when positioning is performed by moving the stage on which the semiconductor device 100 is mounted based on coordinate data from an alignment mark or the like, deviation of each wiring pattern between wiring layers, inclination of the semiconductor device 100, and variation in stage accuracy. This is because a position shift occurs due to the above. If FIB processing is performed in this state, problems such as processing of a wiring pattern adjacent to a wiring pattern to be processed will occur.

However, since the protective film 105 and the interlayer insulating films 104a, 104b, 104c are optically transparent, the wiring patterns 103a, 103 inside the object to be processed.
b, 103c, 103d and foreign substances can be observed using an optical microscope. Therefore, as shown in FIG. 2, on the protective film 105 which is the surface of the semiconductor device 100,
A fine fiducial mark 11 formed from a local metal film that can be recognized by an optical microscope is provided in the field of view of a SIM image 38 from which a position 1 to be FIB processed can be obtained (FIG. 2A 1), a two-dimensional distance (relative positional relationship) (δx, δy) between the fine reference mark 11 and a position (processing position) 1 to be processed is represented by an optical image by an optical microscope. 35 (see FIG. 2).
Step 2) shown in (b), processing is performed based on the measured two-dimensional distance (relative positional relationship) (δx, δy) and the positional information of the fine reference mark detected by the SIM image. An FIB scanning area (processing area) 2 at a location (processing position) to be specified is specified (step 3 shown in FIG. 2C), and the FIB scanning area (processing area) 2 at the specified location is FI-scanned.
By irradiating B, FIB processing can be performed. Reference numeral 110 denotes, for example, a lower wiring pattern having a portion (processing position) 1 to be processed.

Further, when cutting an arbitrary wiring, connecting arbitrary wirings, or observing a cross section obtained by forming a large opening at a defective portion with SIM or SEM, the position to be FIB processed is as follows. In a tester or a CAD system incorporating data inspected by the tester, a position to be corrected is estimated based on the operation failure inspected by the tester, and the estimated position to be corrected and the design data (CAD data) are determined. The location (processing position) 1 of the wiring pattern to be processed is obtained by collation with the drawing data (layout data), and is calculated as coordinate data from an alignment mark or the like. In order to estimate a process step in which foreign matter is generated by performing elemental analysis of the foreign matter or the like, when exposing a buried foreign matter, the position to be FIB processed is determined by an alignment mark 120 or the like detected by the foreign matter inspection device. It will be calculated as coordinate data. Further, the semiconductor device 100
The fine fiducial mark 11 provided on the protective film 105 which is the surface of
It is necessary to form the M image with an optically opaque material (for example, a metal material) so as to be able to detect the position with high precision, and to have an uneven shape.

Next, a fine reference mark 11 is provided on the protective film 105, which is the surface of the semiconductor device 100 according to the present invention, and the fine reference mark 11 and the location (processing position) 1 to be processed are defined. Two-dimensional distance (relative positional relationship)
FIB provided with a fiducial mark adding / measuring device for measuring (δx, δy) using optical image 35 and a FIB processing device
A first embodiment of the processing system will be described with reference to FIGS. As shown in FIG. 3, the fiducial mark assigning / measuring device of the first embodiment includes an XYZ θ table 26 on which the semiconductor device 100 is mounted, and a small amount of the liquid material 10.
Coating device 2 for applying to a local area on the surface of semiconductor device 100
30, a heating means 220 for heating and curing a small amount of the liquid material 10 applied by the application device 230, and a fine reference mark 11 based on an optical image 35 observed or detected. A two-dimensional distance (relative positional relationship) (δx, δy) to the position (position) 1 is calculated. Optical microscope 210 used for detecting and detecting alignment marks 120 formed in
It is composed of The XYZθ table 26 is configured to be able to move the semiconductor device 100 by an arbitrary amount in each of the XYZ directions,
Furthermore, it is configured to be rotatable on the XY plane (θ direction) about the Z axis. In particular, the XYZθ table 26 is configured to be movable in the Z direction so that the optical microscope 210 performs automatic focus control to obtain a clear image signal from the semiconductor device 100.

The coating device 230 includes a pipette 21 for discharging a small amount of liquid material, a liquid material supply source 232 for applying pressure in accordance with a command from the controller 202, and a pipe 231 connecting the liquid material supply source 232 and the pipette 21. And a moving mechanism 22 to which the pipette 21 is attached and positioned in the XYZ directions. Ag, Au, Cu, Cr, Pt, P
For example, a complex solution of any of various metals such as d, a liquid in which fine particles thereof are dispersed in various solvents, and the like are used. As a first embodiment 21a of the pipette 21, FIG.
As shown in (a), the tube is made of metal, glass, various resins, or the like, and has a tip diameter of 20 μm or less, and is filled with the liquid material 10 in advance. Then, as shown in FIG. 4B, the pipette 21a is held by the moving mechanism 22 at a predetermined angle, and
2 is configured to be able to move an arbitrary amount in each direction of XYZ. Further, the rear end of the pipette 21a is
2 by a pipe 231,
2 enables air or an inert gas such as Ar or N _{2 to} be supplied at an arbitrary pressure for an arbitrary time. Thereby, the liquid material 10
Is discharged from the tip of the pipette 21a in an arbitrary amount.

As a second embodiment 21b of the pipette 21, as shown in FIG. 5 (a), the tip of a pipe made of metal, glass, various resins, or the like and having a tip diameter of 20 μm or less is suitably used. The liquid material 10 is formed by bending at an angle α, and the inside is filled in advance with the liquid material 10. And FIG.
As shown in (b), the pipette 21b is connected to the semiconductor device 1
The moving mechanism 22 is configured to be held by the moving mechanism 22 at an angle β with respect to the surface to be processed 00 and to be able to move by an arbitrary amount in each of the XYZ directions. In addition, pipette 21b
The rear end is connected to the pressurizing means 232 by a pipe 231, and the pressurizing means 232 allows air or Ar or N
An inert gas such as ₂ can be supplied at an arbitrary pressure for an arbitrary time.
Thereby, the contact angle between the tip of the pipette 21b and the surface of the protective film 105 of the semiconductor device 100 is the sum of the tip bending angle α of the pipette 21b and the holding angle β of the pipette 21b,
Vertical or near values are obtained. Therefore, as the liquid material 10 discharged in an arbitrary amount from the tip of the pipette 21b, a circular coating shape in which the dimension x2 in the X direction is substantially equal to the dimension y2 in the Y direction is obtained as shown in FIG. Further, as shown in FIG.
1 may be used. The pin 31 used here is
As shown in FIG. 6 (a), any one of metal, glass, and various resins is molded to a tip diameter of 10 μm or less. That is, as shown in FIG. 6B, the coating device 230 holds a pin 31 for attaching a small amount of liquid material to the tip by surface tension or the like, holds the pin 31, positions the pin 31 in the XYZ directions, and further rotates. And a container 33 for filling the liquid material 10 therein and closing the lid 34 to prevent drying except when necessary for application or the like. By immersing the tip of the pin 31 in the liquid material 10 filled in the container 33, a small amount of the liquid material 10 is attached to the tip of the pin 31. Next, the pin 31 is rotated by the moving mechanism 32, and a small amount of the liquid material 10 attached to the tip is brought into contact with the surface of the protective film 105 of the semiconductor device 100, so that the coating can be performed.

The heating means 220 heats and burns the liquid material 10 applied in a small amount in the vicinity of the processing position 1 of the semiconductor device 100 by the coating device 230, and sinters the laser light. Adjusting means 223, variable aperture 224, half mirror 22
5. Power meter 226 for measuring power, shutter 2
27, dichroic mirror 21 that reflects laser light
5 and an objective lens 25. Of course, the heating means 220 projects the laser beam shaped by the variable aperture 224 onto the fired liquid material 11 so as to be line-symmetric or point-symmetric in the X and Y-axis directions so as to be a reference mark. 7 (a) and 8 (a) to 8 (d), a pattern (reference mark) 1 that is line-symmetric or point-symmetric in the X-axis and Y-axis directions.
It is also possible to perform removal processing so as to carve 2a to 12e. The laser oscillator 221 includes, for example, pulsed YAG laser light (basic wave, various harmonics),
Those that emit laser light such as r laser light (a fundamental wave and a second harmonic) can also be used. The shape of the removal processing may be circular or rectangular. FIG.
In (a), a removal mark 12a is formed at the center of
Although it is formed in places, it is not limited to this. For example, FIG.
As shown in (a), the removal mark 12b may be arranged in a cross shape at a position off the center of the metal film 11. FIG.
As shown in (b), the rectangular removal marks 12c may be arranged in a cross shape. Further, as shown in FIG. 8C, a cross-shaped removal mark 12d may be formed. Further, as shown in FIG. 8D, a diamond-shaped removal mark 12e may be formed.

Thus, the removal mark 1 as a reference mark 1
When the forms 2b to 12d are as shown in FIG. 8, the cross cursor 36b is more easily aligned as shown on the right of FIG. In the above embodiment, the removal marks 12b to 12d
The cross cursor 36b is aligned with the center of the removal marks 12b to 12d, but may be aligned with the edges of the removal marks 12b to 12d.
In this case, it is natural that the cross cursor 36b is aligned with the edge in the next step. The optical microscope 210 displays the optical image 3 to be observed or detected.
5, a two-dimensional distance (relative positional relationship) (δx, δy) between the fine reference mark 11 and the location (processing position) 1 to be processed is calculated. It is used for positioning the tip of the pipette 21 or the pin 31 and detecting an alignment mark formed on the surface of the semiconductor device 100. The optical microscope 210 includes a light source 214 that emits illumination light 213 having a plurality of wavelength components close to white light, a half mirror 212, and an objective lens 2.
5, an image sensor 211 including a camera or the like that receives an image and converts it into an image signal, and an image sensor 2
An image processing unit 204 having an image memory function of image-processing and storing an image signal obtained from the controller 11, a controller 201, a monitor 203, an input unit 202 including a network or a recording medium, The output means 205 comprises a storage device 206 and the like. 216 is an optical lens barrel.

First, the optical microscope 210 is connected to the semiconductor device 1.
The coating device 230 is used to position a small amount of the liquid material 10 on the surface of the protective film 105. By the way, the approximate position coordinate information of the position (processing position) 1 to be processed with reference to the alignment mark 120 is obtained from a tester or a CAD system which has taken in data inspected by the tester from a network or an input means 20 such as a recording medium.
2 is input to the controller 201 using the storage device 2
06 is stored. The design data (CAD data)
The drawing data (layout data) based on the data is also input to the controller 201, stored in the storage device 206, and displayed on the monitor 203, so that the processing position can be easily specified. In addition, from the FIB processing device described later, data relating to the field of view 38 of the SIM image is input to the controller 201 using input means 202 such as a network or a recording medium and stored in the storage device 206.

Thus, first, the controller 201
Controls the movement of the stage 26 to position the optical image of the first alignment mark 120 formed on the surface of the semiconductor device 100 within the visual field 38 of the optical microscope 210. First alignment mark (specific pattern may be used) formed on semiconductor device 100 by optical microscope 210.
The image of the first alignment mark 120 is optically imaged and displayed on the monitor 203 as shown in FIG. On the screen on the monitor 203, the first alignment mark 120 and the cross cursor 36 are aligned. Next, the controller 201 controls the movement of the stage 26 to position the optical image of the second alignment mark 120 formed on the surface of the semiconductor device 100 in the visual field 38 of the optical microscope 210. Then, the second alignment mark (a specific pattern may be used) formed on the semiconductor device 100 by the optical microscope 210.
The image of the second alignment mark 120 is optically imaged and displayed on the monitor 203 as shown in FIG. On the screen on the monitor 203, the second alignment mark 120 and the cross cursor 36 are aligned. As a result, the controller 201
The inclination θ of the semiconductor device 100 is determined from the stage coordinates of the first and second alignment marks 120, and the stage 2 on which the semiconductor device 100 is mounted with respect to the optical microscope 210 is determined.
6 is corrected (adjusted). Then, the controller 201 processes and stores the input and stored position (processing position) based on the position of the first or second alignment mark 120 detected by the optical microscope 210.
The position to be machined (machining position) 1 is controlled by driving the stage 26 based on the approximate position coordinate information of the monitor 1.
Position so that it is displayed on the screen.

Next, the controller 201 reads out the data relating to the field of view 38 of the SIM image from the storage device 206 and displays it as a rectangular cursor 38 on the screen of the monitor 203 in addition to the cross cursor. This rectangular cursor 3
Reference numeral 8 denotes an observation area (field of view) based on a secondary charged particle image of a monitor 117 provided in an FIB processing apparatus described later.
5 shows an observation area (field of view) at the time of final alignment during FIB processing. The size of the observation area (field of view) 38 is about 10 μm square to about 100 μm square, and is determined by using input means 202 such as a keyboard or a mouse according to the size of the wiring pattern of the semiconductor device 100 to be processed. Switch.

Next, the controller 201
For example, in order to position the processing position 1 displayed at 3 on the vicinity of the center of the rectangular cursor 38 (the intersection of the cross cursor 36), the stage 26 based on the position information obtained from the cross cursor 36 or input means 202 such as a keyboard or a mouse. Control. Next, the controller 201 controls the moving mechanism 22 to move the pipette 21 or the pin 31 of the coating device 230, and moves the tip of the pipette 21 or the pin 31 to the semiconductor device near the processing position 1 in the rectangular cursor 38. 100 is brought into contact with the surface of the protective film 105 of FIG.
As shown in (a), a small amount of liquid material 10 is applied locally near the position 1 to be processed. The pipette 21
Alternatively, an image of the tip of the pin 31 is captured by the optical microscope 210 and displayed on the monitor 203, and the moving mechanism 2 is manually moved.
The position of the tip of the pipette 21 or the pin 31 is adjusted to a position at a predetermined distance from the optical axis of the optical microscope 210 by using the cursor line 36 or the like by controlling 2. Therefore, in the controller 201, the position to be processed (processing position) 1
Is set to the optical axis of the optical microscope 210. Conversely, the position of the tip of the pipette 21 or the pin 31 is aligned with the optical axis of the optical microscope 210 using a cursor line or the like, and the position to be processed (processing position) 1 is separated from the optical axis of the optical microscope 210 by a predetermined distance. It is also possible to set the position. The information on the position to be processed (processing position) 1 based on the alignment mark 120 obtained from the tester or the CAD system using the input unit 202 is based on the approximate position information.
The controller 201 displays an image based on the drawing data (layout data) on the monitor 203, thereby making it easy to set and specify the position 1 to be processed.

Next, the power is reduced by the power adjusting means 223 to such an extent that the removal processing is not performed. The fine reference mark 11 from the convex local film is formed on the protective film 10 of the semiconductor device 100.
5 can be formed. Also, the fired liquid material (metal convex local film) 11 is shaped in a line symmetry or a point symmetry in the X and Y axis directions to serve as a reference mark, or FIG. 8A to 8D, when the removal processing is performed so as to carve patterns 12a to 12e that are line-symmetric or point-symmetric in the X-axis and Y-axis directions, the removal processing is performed by the power adjustment unit 223. This can be realized by projecting a laser beam shaped by the variable aperture 224 onto the fired liquid material 11 with the power increased as much as possible.

Next, an optical image from the semiconductor device 100 is captured by the optical microscope 210, and the optical image is stored in the image memory 204. When the controller 201 reads the optical image stored in the image memory 204 and displays it on the monitor 203, the optical images shown in FIGS. 2B and 7B are obtained. That is, the visual field 35 of the optical microscope 210
Has a wiring pattern 103 having a portion 1 to be processed.
The images a, 103b and 103c and the image of the fine reference mark 11 applied by the application device 230 and heated and baked by the heating means 220 are detected in the field of view 38 of the SIM image. Therefore, the relative positional relationship (δx, δy) between the fine reference mark 11 and the processing position 1 in the semiconductor device 100 is measured using an optical microscope (including a laser microscope) 210 having a length measuring function. . This measurement procedure is performed first if necessary, as shown in FIGS.
An optical microscope 210 is used by using the first and second alignment marks (or specific patterns) 120 formed on the semiconductor device 100 in the same manner as in Step 1 shown in FIG.
The inclination of the semiconductor device 100 in the θ direction is adjusted again.

Next, the controller 201 controls the movement of the stage 26, and as shown in FIGS. 2 (b) and 7 (b), sets the processing position 1 which is imaged by the optical microscope 210 and stored in the image memory 204. An optical image of the area 35 including the area is displayed on the monitor 203. And the controller 201
Is a monitor 20 as shown in FIGS. 2 (b) and 7 (b).
In 3, the first cross cursor 36a is displayed, the first cross cursor 36a is moved to align the intersection with the processing position 1, and the position coordinates of the processing position 1 are calculated from the position coordinates of the first cross cursor 36a. get. Next, the controller 201 operates as shown in FIG. 2 (b), FIG. 7 (b), FIG.
As shown in FIGS. 8A, 8B, 8C, and 8D, the second cross cursor 3
6b is displayed, the second cross cursor 36b is moved to align the intersection of the second cross cursor 36b with the center of the fine reference mark 11, and the second cross cursor 36b is displayed.
The position coordinates of the fine reference mark 11 are obtained from the position coordinates of b. Then, the controller 201
Cursors 36a, 36b acquired on the screen of
, A relative distance (δx, δy) between the fine reference mark 11 and the processing position 1 is obtained, and a relative distance (δx, δ) between the obtained fine reference mark 11 and the processing position 1 is obtained. δy) is stored in the memory (storage device) 206. 7 (a) and FIGS. 8 (a) to 8 (d)
A case where the intersection of the second cross cursor 36b is aligned with the center of the pattern 12a to 12e that is line-symmetric or point-symmetric in the X-axis and Y-axis directions on the monitor 203 is shown. The first and second cross cursors 36
The same cross cursor can be used for a and 36b.

The case where the FIB processing is performed at one place on the semiconductor device 100 has been described above. Actually, since it is necessary to perform FIB processing at a plurality of locations on the semiconductor device 100, the above operation is repeatedly performed, so that the surface of the protective film 105 of the semiconductor device 100 becomes
A fine reference mark 11 is formed in the vicinity of each processing position and is formed by heating and firing, and further, a memory (storage device) 2
In 06, the relative distance (δx, δy) between each fine reference mark 11 and each processing position 1 is stored.
Therefore, the controller 201 reads the relative distance (δx, δy) between each processing position 1 and each fine reference mark 11 from the memory (storage device) 206 for each processing position, and By outputting F
It can be provided to the IB processing device. Further, the controller 201 reads out the optical image data detected by the optical microscope 210 and stored in the image
B processing device can be provided.

In the embodiment of the reference mark adding / measuring device shown in FIG. 3, a case where the CPU in the controller 201 performs image processing to further automate the operation will be described. That is, the CPU in the controller 201
Reads out the optical image stored in the image memory 204, and uses the template processing or the like, which is one of image processing techniques, based on the read-out optical image to create a fiducial mark 11 in the image signal. The center coordinates of 12a to 12d are obtained irrespective of the designation by the operator with the cursor. Regarding the processing position 1, it is easiest for the operator to specify the optical image displayed on the monitor 203, but the layout image based on the layout data stored in the storage device 206 is the same as the optical image. Monitor 117 at magnification
, The accuracy of position designation by the operator is improved. Furthermore, if the cursor for designating the location in the optical image and the layout image can be moved simultaneously at the corresponding location, the accuracy of the location designation is further improved. Alternatively, after adjusting the magnification, the images may be made transparent so that the images can be recognized from each other, and the images may be overlapped with each other to specify the position. With the above process, the setting of the processing position 1 with respect to the reference mark 11 is completed, the positional relationship (δx, δy) between the reference mark 11 and the processing position 1 is stored in the storage device 206, and can be provided to the FIB processing device. Becomes

Next, an FIB processing apparatus which receives data (δx, δy) of the processing position 1 for the fine reference mark 11 formed on the surface of the protective film 105 of the semiconductor device 100 will be described with reference to FIG. . Reference numeral 51 denotes a processing chamber (sample chamber) in which the semiconductor device 100 is mounted.
A stage 52 movable in the Zθ direction is provided. A door 53 for introducing the semiconductor device 100 is provided on a side surface of the processing chamber 51, and a vacuum pump 54 for evacuating the processing chamber 51 is connected to a lower portion of the processing chamber 51 via a valve 55. ing.

The semiconductor device 100 is placed above the processing chamber 51.
6 that generates FIB 56 for observing and processing images
1 is provided. The ion source 6 is provided in the lens barrel 61.
2, an aperture 63 for extracting an ion beam emitted from the ion source 62, a charged particle optical system 64 for focusing the ion beam, a blanking electrode 65, a blanking aperture 66, and a deflection electrode 67. And
The semiconductor device 100 is configured to be irradiated with the focused ion beam 68. Further, a secondary charged particle detector 59 for detecting a secondary charged particle (secondary ion or secondary electron) 58 generated by the irradiation of the FIB 68 is provided above the processing chamber 51. The detector 59 is connected to an image processing device 60 for performing various image processing in synchronization with the scanning of the FIB 56 (deflection signal applied to the deflection electrode 67) obtained from the optical system controller 118. You. A secondary charged particle image (referred to as a SIM image) is A / D converted by the image processing device 60 and stored in the image memory 114. Then, the controller 124 controls the image memory 11
4, the secondary charged particle image (SIM image) stored on the monitor 117 can be displayed.

A stage controller 119 controls the stage 52 based on a command from the controller 124. Numeral 121 denotes an input means composed of a network or a recording medium, which is connected to the output means 205 of the fiducial marking / measuring device shown in FIG. Information relating to the relative distance (δx, δy) from the reference mark 11 is input and stored in the storage device 131. Further, the input unit 121 also inputs the approximate position information of the position (processing position) 1 to be processed based on the alignment mark obtained from the tester or the CAD system, and stores the information in the storage device 131. The input unit 121 may be used to input image data based on drawing data (layout data) obtained from a tester or a CAD system, or optical image data detected by the optical microscope 210 of the reference mark adding / measuring device. in this way,
In the storage device 131, the rough position information of the position to be processed (processing position) 1 based on the alignment mark formed on the surface of the semiconductor device 100 and the surface of the protective film 105 of the semiconductor device 100 are respectively processed. The relative distance (δx, δy) of each processing position 1 with respect to each fine reference mark 11 formed near the position is stored.
Further, the storage device 131 also stores image data based on drawing data (layout data) or optical image data detected by the optical microscope 210 of the fiducial marking / measuring device.

Next, the operation of the FIB processing apparatus will be described. First, the semiconductor device 100 is introduced onto the stage 52 in the processing chamber 51 by opening the door 53. Then, similarly to the optical microscope 210 of the reference mark providing / measuring device, the controller 124 observes the alignment mark and the wiring pattern on the semiconductor device 100 with the SIM image, and refers to the observed alignment mark and the wiring pattern. The inclination of the semiconductor device 100 in the θ direction is adjusted by driving and controlling the θ stage by giving a control command to the stage controller 119. Next, the controller 124 positions the alignment mark on the semiconductor device 100 within the field of view of the SIM image by giving a control command to the stage controller 119,
The position of the alignment mark is determined by the secondary charged particle detector 5.
9, the SIM image is stored in the image memory 114, and the position of the alignment mark is calculated. Further, the controller 124 uses the calculated position of the alignment mark as a reference, and based on the approximate position information coordinate data of the position (processing position) 1 to be processed with reference to the position of the alignment mark stored in the storage device 131. The stage 52 on which the semiconductor device 100 is mounted is moved to move the fine reference mark 11 and the processing position 1 in the SIM image field of view 38.
Position. In this position, the FIB 68 is scanned and irradiated, and the secondary charged particle detector 59 detects the semiconductor device 10.
An image based on the secondary charged particles 58 from the surface 0 is detected and stored in the image memory 114. Then, the controller 124 reads out from the image memory 114 and
17, a SIM image based on the fine reference mark 11 and the step of the protective film 105 is displayed as shown in FIG. 2C or 7C.

Next, the controller 124 operates the monitor 11
A cross cursor 39 is displayed on 7, and its intersection is aligned with the center of the fine reference mark 11. Then, as shown in FIG. 2 (c) or FIG. 7 (c), the controller 124 controls each fine reference mark 1 stored in the storage device 131.
Relative distance of each processing position 1 to 1 (δx, δy)
Is read out, and a box 2 indicating an FIB scanning area (FIB processing area) at the time of processing, which is set in advance at a position (δx, δy) from the intersection, is displayed on the monitor 117, thereby performing FIB scanning at the time of processing. An area (FIB processing area) is set. Further, the controller 12
4 enlarges or reduces the image data based on the drawing data (layout data) stored in the storage device 131 or the optical image data detected by the optical microscope 210 of the fiducial marking / measuring device so as to correspond to the SIM image. By displaying on the monitor 117, the set F
It is possible to confirm whether or not the IB scanning area (FIB processing area) is appropriate.

Next, the controller 124 determines an ion beam diameter, an ion beam current, a deflection amount, and a dose amount suitable for the set FIB scanning area, and based on these determined various processing conditions, the optical system. Each optical system is controlled via the controller 118 so that the FIB 68
Irradiation is performed on the scanning area (FIB processing area) to start FIB processing. By the above operation, the protective film 105, the interlayer insulating film 104, and the Al wiring 10 constituting the semiconductor device 100 are formed.
3 is sequentially removed from the surface by sputtering, and a process of opening a connection window, exposing an opening for observing the cross section of the Al wiring 103 and observing a cross section, and exposing a buried foreign substance is performed.
In particular, regarding the processing depth control by the optical system controller 118, the secondary charged particle detector 59
The change can be performed based on the change of the secondary charged particle signal detected in the above.

In the embodiment of the FIB processing apparatus shown in FIG. 9, a case will be described in which the CPU in the controller 124 performs image processing to further advance automation.

In other words, in the FIB processing apparatus, what can be observed as a SIM image is the semiconductor device 10 having advanced flattening.
In the case of 0, there is only the step pattern of the protection film 105 reflecting the reference mark 11 and the uppermost wiring pattern 103d. Therefore, the SIM image is displayed on the monitor 117 at this stage.
Will be displayed. The center of the fiducial marks 11, 12a to 12d may be specified by the operator in the same manner as in the above-described method. However, also in this case, in order to reduce the burden on the operator and to avoid a variation in center setting for each operator, The CPU in the controller 124 is the image memory 1
14 is read out, and based on the read out SIM image, the reference marks 11 and 12 are automatically used by using template processing or the like which is one of image processing techniques.
The center coordinates of a to 12d are obtained. Further, the controller 1
The CPU in 24 extracts the positional relationship (δx, δy) between the reference marks 11, 12a to 12d and the processing position 1 stored in the memory 131 to provide the center of the reference marks 11, 12a to 12d. The processing area 2 is automatically set for the FIB processing position 1 from the coordinates, and the monitor 1
17 together with the SIM image 38. That is, the CPU in the controller 124 is
A rectangle indicating the FIB processing area 2 or a special shape is set on the surface of the 0 protective film 105, and the result can be displayed on the monitor 117. Further, the controller 124 calls the FIB processing conditions, if any, stored in the memory 131, gives a command conforming to the processing conditions to the optical system controller 118, and turns on the blanking electrode 65. As a result, FIB processing is started on the processing area 2 on the semiconductor device 100. If the FIB processing conditions are not stored in the memory 131, the controller 124 at that stage
31 is called and displayed on the monitor 117 or the like, a FIB processing condition is input using the input means 121 such as a keyboard or a mouse, and a command conforming to the input FIB processing condition is input. To the optical system controller 118 to start the FIB processing. With the above operation, FIB processing close to automatic processing can be realized.

As described above, the protective film 105 of the semiconductor device 100 is arranged such that each fine reference mark 11 and each processing position 1 that can be observed by the SIM image and the optical image exist within the field of view of the SIM image. Each fine reference mark 11 is formed in the vicinity of each processing position 1 on the surface of the substrate, and the positional relationship between each fine reference mark 11 and each processing position 1 is optically measured. When FIB processing is performed on a wiring pattern, a foreign substance, and the like existing below the interlayer insulating films 104a, 104b, and 104c to be formed, the processing position 1 can be easily and accurately specified.

In the first embodiment described above, FIG.
20 of the reference mark adding / measuring device shown in FIG.
1, input means 202, monitor 203, and storage device 2
06 and the controller 12 of the FIB processing apparatus shown in FIG.
4. Input means 121, monitor 117, and storage device 1
31 has been described, but it is also possible to use a common controller, input means, monitor, and storage device.

In the first embodiment described above, the FI
A case has been described in which one fine reference mark 11 is provided on the protective film 105 of the semiconductor device 100 in the vicinity of the location (processing position) 1 where the B processing is to be performed. However, as shown in FIG. A plurality of fine reference marks 11 are formed on the protective film 105 of the semiconductor device 100 in the vicinity of a position (processing position) 1 to be formed, and distances (δx1, δy1) and (δx2, δy2) from them are determined. Then, the processing position 1 may be specified based on the result. As a result, the overall processing time becomes longer, but the processing position alignment accuracy can be improved. Further, the semiconductor device 100
From the stage 26 of the fiducial marking / measuring device
When an operation of changing the stage to the stage 52 of the B processing apparatus is performed, the semiconductor device 100 is roughly positioned and mounted on the respective stages 26 and 52, but slightly θ in plan.
Direction (rotation direction). In this case, the deviation of the semiconductor device 100 in the θ direction (rotation direction) may be adjusted by the θ stages provided on both stages, but the fine reference mark 11 is placed near the processing position 1 as shown in FIG. By providing a plurality of the reference marks 11, the processing position 1 is set to the distance (δx1, δ
y1) and (δx2, δy2), and the distances (δx1, δy1) and (δx2, δ
y2), a planar inclination (amount of deviation in the θ direction) can also be calculated. For example, a rectangular processing area 2 is set in accordance with the calculated planar inclination (amount of deviation in the θ direction). Can be performed, and the operation of adjusting the inclination is not required, and the complexity can be reduced.

As shown in FIGS. 7 and 8, the finely patterned patterns 12a to 12d are finer and the edges are finer than that of the fired fine reference marks 11 themselves. Because of the steepness, S
An error in the cursor alignment with the IM image can be reduced, and as a result, FIB processing with high positioning accuracy can be realized. In the above embodiment, the fine reference mark 11 is formed of a metal film such as Au or Pd.
In observation using a SIM image in the processing apparatus, any method can be used as long as it can be distinguished from the protective film 105 on the surface of the semiconductor device 100. For example, it may be formed of a metal oxide film such as Cr ₂ O ₃ , SiO ₂ or Si ₃ N ₄ to which various dyes or impurities such as B and P are added.

Next, a reference mark providing device for providing a fine reference mark 11 on the protective film 105 which is the surface of the semiconductor device 100 according to the present invention, and a fine reference mark provided by the reference mark providing device. A two-dimensional distance (relative positional relationship) (δx, δy) between 11 and a position to be processed (processing position) 1 is measured by the optical image 35,
The measured two-dimensional distance (relative positional relationship) (δ
x, δy), with reference to FIGS. 3 to 8 and FIG. 12 will be described. That is, the reference mark providing device is configured as shown in FIG. The optical microscope 210 includes a protective film 105 on the surface of the semiconductor device 100.
Coating device 2 for providing fine reference mark 11 on top
It is used for positioning the tip of the pipette 21 or the pin 31 that constitutes 30.

First, the controller 201 sets the stage 2
The optical image of the first alignment mark 120 formed on the surface of the semiconductor device 100 is positioned in the field of view 38 of the optical microscope 210 by controlling the movement of the optical device 6. A first alignment mark (or a specific pattern) 120 formed on the semiconductor device 100 is optically imaged by the optical microscope 210, and the imaged first alignment mark 12 is obtained.
The image 0 is displayed on the monitor 203 as shown in FIG. On the screen on the monitor 203, the first alignment mark 120 and the cross cursor 36 are aligned. Next, the controller 201 controls the movement of the stage 26 to control the second
The optical image of the alignment mark 120 is
Within the field of view 38 of Then, the second alignment mark (or a specific pattern) 120 formed on the semiconductor device 100 is optically imaged by the optical microscope 210, and the imaged second alignment mark 12 is formed.
The image 0 is displayed on the monitor 203 as shown in FIG. On the screen on the monitor 203, the second alignment mark 120 and the cross cursor 36 are aligned. As a result, the controller 201 makes the first and second
The inclination θ of the semiconductor device 100 is determined from the stage coordinates of the alignment mark 120, and the inclination θ of the stage 26 on which the semiconductor device 100 is mounted with respect to the optical microscope 210 is corrected (adjusted). Then, the controller 201 converts the input and stored approximate position coordinate information of the processing position (processing position) 1 based on the position of the first or second alignment mark 120 detected by the optical microscope 210. The position to be processed (processing position) 1 is controlled so as to be displayed on the screen of the monitor 203 by controlling the drive of the stage 26 based on this.

Next, the controller 201 reads out the data relating to the field of view 38 of the SIM image from the storage device 206 and displays it as a rectangular cursor 38 on the screen of the monitor 203 in addition to the cross cursor. This rectangular cursor 3
Reference numeral 8 denotes an observation area (field of view) based on a secondary charged particle image of a monitor 117 provided in an FIB processing apparatus described later.
5 shows an observation area (field of view) at the time of final alignment during FIB processing.

Next, the controller 201
For example, in order to position the processing position 1 displayed at 3 on the vicinity of the center of the rectangular cursor 38 (the intersection of the cross cursor 36), the stage 26 based on the position information obtained from the cross cursor 36 or input means 202 such as a keyboard or a mouse. Control. Next, the controller 201 controls the moving mechanism 22 to move the pipette 21 or the pin 31 of the coating device 230, and moves the tip of the pipette 21 or the pin 31 to the semiconductor device near the processing position 1 in the rectangular cursor 38. 100 is brought into contact with the surface of the protective film 105 of FIG.
As shown in (a), a small amount of liquid material 10 is applied locally near the position 1 to be processed.

The image of the tip of the pipette 21 or the pin 31 is taken in advance by the optical microscope 210 and
3, the movement mechanism 22 is manually controlled to adjust the position of the tip of the pipette 21 or the pin 31 to a position at a predetermined distance from the optical axis of the optical microscope 210 using the cursor line 36 or the like. Therefore, in the controller 201, the position (processing position) 1 to be processed is the optical microscope 2
10 optical axes are set. On the contrary, the position of the tip of the pipette 21 or the pin 31 is determined by using the cursor line or the like with the optical microscope 2.
It is also possible to set the position to be processed (processing position) 1 at a position separated by a predetermined distance from the optical axis of the optical microscope 210 in accordance with the 10 optical axes. Next, the power adjusting means 223
By irradiating laser light to a small amount of the applied liquid material 10 in a state in which the power is reduced to such an extent that the removal processing is not performed, heat calcination is performed and fine fine particles from the metal convex local film are formed. Reference mark 11 is placed on semiconductor device 100
Can be formed on the protective film 105. In addition, the baked liquid material (metal convex local film) 11 is shaped into a line symmetry or a point symmetry in the X and Y axis directions, or as shown in FIGS. 7 (a) and 8 (a). As shown in (d), when the removal processing is performed so as to carve patterns 12a to 12e that are line-symmetric or point-symmetric in the X-axis and Y-axis directions, the power is increased by the power adjusting means 223 to such an extent that the removal processing can be performed. And the fired liquid material 1
1 can be realized by projecting the laser beam shaped by the variable aperture 224.

As described above, in the semiconductor device 100, the fine reference mark 11 is provided on the protective film 105 near the FIB processing position (processing position) 1 by the reference mark providing apparatus shown in FIG. It is possible to do. Next, a two-dimensional distance (relative positional relationship) between the fine reference mark 11 provided by the reference mark providing apparatus shown in FIG. 3 and a location (processing position) 1 to be processed.
(Δx, δy) is measured by the optical image 35, and the measured two-dimensional distance (relative positional relationship) (δx, δ
y) and referring to the SIM image for positioning and FI
A reference mark measurement / FIB processing apparatus for performing the B processing will be described with reference to FIG. FIG. 12 is a configuration diagram illustrating an embodiment of a fiducial mark measurement / FIB processing apparatus. In other words, the fiducial mark measurement / FIB processing device uses the F mark shown in FIG.
An optical microscope 70 for measuring a reference mark is provided in parallel with a FIB processing optical system (barrel) 61 of the IB processing apparatus.
An optical microscope 70 for measuring a reference mark is constituted by a laser microscope, and includes a laser oscillator 71 that emits a laser beam 72 serving as an observation light source, a laser beam scanning unit 73 for scanning the laser beam 72, and a laser beam 72. Optical barrel 75 containing optical elements such as a half mirror 74 for bending the optical path
A laser light introduction window 76 for introducing the laser light 72 into the processing chamber 51; an objective lens 79 for condensing and irradiating the laser light 72 onto the semiconductor device 100 and condensing the reflected light; A detector (image sensor) 77 having a pinhole and a photodetector therein; and performing various image processing on a detection signal from the detector 77 in synchronization with the scanning of the laser beam 72, as shown in FIG. An image processing device 78 having an image memory for obtaining the optical image 35 shown in FIG. Then, the optical image 35 stored in the image memory of the image processing device 78 is provided to the controller 124 so that the optical image 35 can be displayed on the monitor 117. By the way, the reason why the objective lens 79 is installed in the processing chamber 51 is that the objective lens 79 having a high magnification and a high numerical aperture (high NA) (the working distance is reduced) is used.
This is because it is possible to perform high-resolution observation and accurately measure the distance (δx, δy) between the fine reference mark 11 and the processing position 1. If high-resolution observation is possible through the laser beam introduction window 76, the objective lens 79 is connected to the processing chamber 51.
It can be placed outside the box. If the laser microscope (excluding the image processing device 78) can be used in a vacuum, the laser microscope itself is provided in the processing chamber 51 to eliminate the influence of the laser light introduction window 76 such as a reduction in resolution. Can be.

Further, inside the processing chamber (sample chamber) 51, a stage 52 on which the semiconductor device 100 is mounted and which can move in the XYZθ directions is accommodated. A door 53 for loading the semiconductor device 100 is provided on a side surface of the processing chamber 51. A vacuum pump 54 for exhausting the inside of the processing chamber 51 is connected to the lower part of the processing chamber 51 via a valve 55.

Next, the operation will be described. First, FIG.
The semiconductor device 100 provided with the fine reference mark 11 is put in from the door 53 and placed on the stage 52 by the reference mark providing device shown in FIG. And the controller 1
Under the drive control of the stage controller 119 based on the command from 24, the stage 52 is moved as shown by the arrow, and the semiconductor device 100 is positioned directly below the objective lens 79. Then, similarly to the fiducial mark adding / measuring device according to the first embodiment, the inclination in the θ direction is adjusted, and an optical image from the semiconductor device 100 is captured by the optical microscope (laser microscope) 70 and is displayed on the monitor 117. When displayed, Figure 2
(B), the image shown in FIG. 7 (b) is obtained. That is, in the field of view 35 of the optical microscope 70, the images of the wiring patterns 103a, 103b,
The image of the fine reference mark 11 corresponds to the field of view 38 of the SIM image.
Will be detected within.

Therefore, the optical microscope 70 having the length measuring function
The fine reference mark 11 and the semiconductor device 100
The relative positional relationship (δx, δy) with the processing position 1 is measured. This measurement procedure is performed first if necessary, as shown in FIG.
7A, similarly to the step 1 shown in FIG. 7A, using the first and second alignment marks (specific patterns may be used) 120 formed on the semiconductor device 100, the semiconductor with respect to the optical microscope 70. The inclination of the device 100 in the θ direction is readjusted. Next, the controller 124 sets the stage 5
2B, the optical image of the area 35 including the processing position 1 captured by the optical microscope 70 is displayed on the monitor 117 as shown in FIGS. 2B and 7B. And
The controller 124 displays the first cross cursor 36a on the monitor 117 and moves the first cross cursor 36a to the machining position 1 as shown in FIGS. The intersection is aligned, and the position coordinates of the machining position 1 are acquired from the position coordinates of the first cross cursor 36a. Next, the controller 124 changes the state shown in FIG.
As shown in FIGS. 7 (b), 8 (a), 8 (b), 8 (c) and 8 (d), a second cross cursor 36b is displayed on the monitor 117, and the second cross cursor 36b is displayed. The second cross cursor 36b is moved to align the intersection of the second cross cursor 36b with the center of the fine reference mark 11, and the fine reference mark 1 is determined from the position coordinates of the second cross cursor 36b.
1 is obtained. And the controller 201
Is a fine reference mark 1 based on the positional relationship between the two cursors 36a and 36b acquired on the screen of the monitor 203.
Relative distances (δx, δy) between the reference mark 11 and the processing position 1 are calculated.
The relative distance (δx, δy) with the memory (storage device)
131. Note that FIG. 7A and FIG.
(A) to (d) show a case in which the monitor 117 matches the intersection of the second cross cursor 36b with the centers of the patterns 12a to 12e that are line-symmetric or point-symmetric in the X-axis and Y-axis directions. Note that the same cross cursor can be used as the first and second cross cursors 36a and 36b. The case where the FIB processing is performed at one place on the semiconductor device 100 has been described above.

Actually, since it is necessary to subject the semiconductor device 100 to FIB processing at a plurality of locations, the above operation is repeated, and each fine reference mark 11 is The relative distance (δx, δy) from each processing position 1 is stored. Next, the controller 124 controls the stage controller 119.
Of the semiconductor device 100 within the visual field 38 of the SIM image by moving the stage 52
The upper alignment mark is positioned, the position of the alignment mark is detected by the secondary charged particle detector 59, and the SIM image is stored in the image memory 114 to calculate the position of the alignment mark. Further, the controller 12
Reference numeral 4 denotes a semiconductor device based on the approximate position information coordinate data of a position to be processed (processing position) 1 based on the position of the alignment mark stored in the storage device 131 with reference to the calculated position of the alignment mark. The stage 52 on which 100 is placed is moved to position the fine reference mark 11 and the processing position 1 within the visual field 38 of the SIM image.
In this position, the FIB 68 is scanned and irradiated to 2
An image based on the secondary charged particles 58 from the surface of the semiconductor device 100 is detected by the secondary charged particle detector 59 and the image memory 1
14 is stored. Then, when the controller 124 reads out the image from the image memory 114 and displays it on the monitor 117, the SIM based on the fine reference mark 11 and the step of the protective film 105 as shown in FIG.
The image is displayed.

Next, the controller 124 operates the monitor 11
A cross cursor 39 is displayed on 7, and its intersection is aligned with the center of the fine reference mark 11. Then, as shown in FIG. 2 (c) or FIG. 7 (c), the controller 124 controls each fine reference mark 1 stored in the storage device 131.
Relative distance of each processing position 1 to 1 (δx, δy)
Is read out, and a box 2 indicating an FIB scanning area (FIB processing area) at the time of processing, which is set in advance at a position (δx, δy) from the intersection, is displayed on the monitor 117, thereby performing FIB scanning at the time of processing. An area (FIB processing area) is set. Further, the controller 12
4 enlarges or reduces the image data based on the drawing data (layout data) stored in the storage device 131 or the optical image data detected by the optical microscope 210 of the fiducial marking / measuring device so as to correspond to the SIM image. By displaying on the monitor 117, the set F
It is possible to confirm whether or not the IB scanning area (FIB processing area) is appropriate.

Next, the controller 124 determines an ion beam diameter, an ion beam current, a deflection amount, and a dose amount suitable for the set FIB scanning area, and based on these determined various processing conditions, the optical system. Each optical system is controlled via the controller 118 so that the FIB 68
Irradiation is performed on the scanning area (FIB processing area) to start FIB processing. By the above operation, the protective film 105, the interlayer insulating film 104, and the Al wiring 10 constituting the semiconductor device 100 are formed.
3 is sequentially removed from the surface by sputtering, and a process of opening a connection window, exposing an opening for observing the cross section of the Al wiring 103 and observing a cross section, and exposing a buried foreign substance is performed.
In particular, regarding the processing depth control by the optical system controller 118, the secondary charged particle detector 59
The change can be performed based on the change of the secondary charged particle signal detected in the above.

In the second embodiment described above, FIG.
, A controller 201, an input means 202, a monitor 203, and a storage device 206 of the reference mark providing device
Although the case where the controller 124, the input means 121, the monitor 117, and the storage device 131 of the FIB processing apparatus shown in FIG. 12 are separated has been described, it is also possible to configure the common controller, the input means, the monitor, and the storage device. It is. Further, in the second embodiment described above, one fine reference mark 11 is formed in the vicinity of a portion (processing position) 1 where the FIB processing is to be performed, in the vicinity thereof.
Has been described on the protective film 105,
As shown in FIG. 11, a plurality of fine reference marks 11 are located near a location (processing position) 1 where FIB processing is to be performed.
Are formed on the protective film 105 of the semiconductor device 100, and distances (δx1, δy1) and (δx2, δy2) therefrom are formed.
And the processing position 1 may be specified based on the result. As a result, as in the first embodiment, the overall processing time is prolonged, but the processing position alignment accuracy can be improved, and the tilt adjustment of the semiconductor device 100 in the θ direction can be eliminated. Becomes

In the embodiment of the FIB processing apparatus with an optical microscope shown in FIG.
A case in which U further performs automation by performing image processing will be described. First, an optical image of the fiducial mark 11 including the FIB processing position 1 of the semiconductor device 100 mounted on the stage 52 is converted into an optical microscope (for example, a laser microscope).
Observation is performed by 70, and then the stage 52 is moved below the FIB processing optical system 61. In FIB processing equipment,
A region equivalent to the region observed with the optical microscope 70 is observed with a SIM image formed from the secondary charged particles 58 detected by the secondary charged particle detector 59. In this case, usually, the stage 52 can move only with a certain movement accuracy, and the stage 52 does not always stop at a position completely coincident with the optical image detected by the optical microscope 70. Therefore, the deflection electrode 6
It is also possible to correct the beam irradiation position by the FIB deflection by 7, but for that purpose, a high-precision measuring device such as a laser gauge (laser length measuring device) capable of accurately measuring the amount of movement of the stage 52 is mounted. There is a need. However,
Attaching a laser gauge (laser measuring device) or the like increases the price of the device. Note that C in the controller 124
The image processing performed by the PU on the optical image obtained from the optical microscope 70 is the same as in the embodiment shown in FIG. Also, image processing for a SIM image obtained from the FIB processing device, which is executed by the CPU in the controller 124, is described in FIG.
This is the same as the embodiment shown in FIG.

Further, in the second embodiment, FIG.
As shown in FIG. 8A and FIGS. 8A to 8D, the removal processing is performed by the heating device (laser processing device) 220 so that the reference marks 12a to 12e are formed. However, as shown in FIG. In the case of the FIB processing apparatus provided with the fiducial mark measuring device, the FIB processing apparatus is applied to the local film 11 provided on the protective film 105 of the semiconductor device 100 which is put into the processing chamber 51 and mounted on the stage 52. By irradiating the FIB, the reference marks 12a to 12e can be removed. The pattern to be removed may be input to the controller 124 using the input means 124. FIB equipped with an optical microscope 70
By using the processing device, the observation accuracy of the optical microscope 210 in the reference mark providing device can be reduced. Therefore, for example, as shown in FIG. 4C, the optical axis of the optical microscope 210 can be tilted, and the pipette 21a and the pins 31 of the coating device 230 can be lowered vertically.

Further, in the first and second embodiments, the case where a laser processing apparatus capable of removal processing is used as the heating means 220 has been described.
If only heating is used, the heater heating,
It is possible to configure by lamp heating, a combination thereof, or the like. That is, the heating means 80 can be configured as shown in FIG. This heating means 80
The transport plate 82 on which the semiconductor device 100 is mounted is mounted, and the hot plate 8 is heated by incorporating the heater 85 therein.
3 and hot plate 8 heated by heater 85
3, a temperature detector 84 including a thermocouple or the like for detecting the temperature, a temperature controller 86 for adjusting the heating of the heater 85 based on the temperature detected by the temperature detector 84,
A cover 81 covers the semiconductor device 100 and the like heated by the hot plate 83. When this heating means 80 is used, the semiconductor device 100 coated with a small amount of the liquid material 10 by the coating device 230 is moved to the stage 2 shown in FIG.
6 and placed on the transport plate 82 and placed on the hot plate 83. According to the above configuration, the semiconductor device 100 placed on the transport plate 82 is placed on the hot plate 83, so that the semiconductor device 100 is heated and the applied small amount of the liquid material 10 is heated and fired to form a reference made of a metal film. The mark 11 is the semiconductor device 100
Is obtained on the protective film 105.

Next, a fine reference mark 11 is provided on the protective film 105 which is the surface of the semiconductor device 100 according to the present invention, and the fine reference mark 11 and the position (processing position) 1 to be processed are defined. Two-dimensional distance (relative positional relationship)
FIB provided with a fiducial mark adding / measuring device for measuring (δx, δy) using optical image 35 and a FIB processing device
A third embodiment of the processing system will be described with reference to FIGS. 4 to 9 and FIG. FIG. 14 is a configuration diagram showing another embodiment of the reference mark adding / measuring device. The configuration shown in FIG. 14 is different from the reference mark providing / measuring device shown in FIG.
The point is that the fine reference mark 11 is provided on the protective film 105 which is the surface of the semiconductor device 100 by D. That is,
The stage 26 on which the semiconductor device 100 is mounted is moved to the sample chamber 90.
Provided within. The sample chamber 90 includes a window 91 for transmitting light,
A gas supply / exhaust system including a gas introduction pipe 94 connected from a CVD gas cylinder 92 containing a CVD material gas via a valve 93 and an exhaust pipe 96 connected to a vacuum exhaust device (not shown) via a valve 95. And
Further, the stage 26 has a Z stage for mounting the semiconductor device 100 and moving the semiconductor device 100 in the optical axis direction for focusing with laser light and observation light, and It is composed of an XY stage that moves in a vertical plane and a θ stage for adjusting the θ direction. Stage controller 97
Is for controlling the drive of the stage 26 and the drive of the shutter 227 for opening and closing the optical path of the laser beam based on the instruction from the controller 201.

The laser light source 221 is configured to emit, for example, a fundamental wave (wavelength 514.5 nm) or a second harmonic (wavelength 257 nm) of an Ar laser. Also, CVD
In order to deposit a metal film (Mo, Cr, W, Ni, etc.) as a material gas, Mo (CO) ₆ , Cr (CO) ₄ , W
Metal carbonyl compound gases such as (CO) ₄ and Ni (CO) ₄ , metal alkyl compound gases, and the like can be used.
With the above configuration, similarly to the first embodiment, first, the controller 201 controls the movement of the stage 26 to convert the optical image of the first alignment mark 120 formed on the surface of the semiconductor device 100 into an optical microscope. 210 view 3
Position within 8. The optical microscope 210 optically captures images of the first and second alignment marks (or a specific pattern) 120 formed on the semiconductor device 100, and obtains images of the first and second alignment marks 120. The image is displayed on the monitor 203 as shown in FIG. On the screen on the monitor 203, the first and second alignment marks 120 and the cross cursor 36 are aligned. As a result, the controller 201
The inclination θ of the semiconductor device 100 is determined from the stage coordinates of the first and second alignment marks 120, and the stage 2 on which the semiconductor device 100 is mounted with respect to the optical microscope 210 is determined.
6 is corrected (adjusted). Then, the controller 201 processes and stores the input and stored position (processing position) based on the position of the first or second alignment mark 120 detected by the optical microscope 210.
The stage 26 is driven and controlled via the stage controller 97 based on the approximate position coordinate information 1 to position the position 1 to be processed (processing position) 1 so as to be displayed on the screen of the monitor 203.

Next, the controller 201 reads out the data relating to the field of view 38 of the SIM image from the storage device 206 and displays it as a rectangular cursor 38 on the screen of the monitor 203 in addition to the cross cursor. Next, the controller 201 obtains the processing position 1 displayed on the monitor 203 from the cross cursor 36 or input means 202 such as a keyboard or a mouse so as to position the processing position 1 near the center of the rectangular cursor 38 (intersection of the cross cursor 36). The stage 26 is controlled via the stage controller 97 based on the obtained position information.

Next, on the screen of the monitor 203, a fine area in which the reference mark 11 is to be provided near the processing position 1 is designated. Then, the controller 201 controls the position of the stage 26 with respect to the optical axis via the stage controller 97 based on the designation. As a result, a fine region irradiated with the laser beam is formed in the vicinity of the processing position 1.

Therefore, the valve 95 is opened, and the inside of the sample chamber 90 is evacuated by the vacuum evacuation device until the degree of vacuum becomes 10 to ⁶ Torr or more. Thereafter, the valve 95 is closed and the valve 93 is opened to supply the CVD gas to a desired pressure (for example, Mo (CO) ₆
In this case, the gas is supplied into the sample chamber 90 until the pressure reaches 0.1 Torr to form an atmosphere of a CVD gas. After that, the laser beam 222 is emitted from the laser light source
7 is opened, and the laser beam is focused on the surface of the semiconductor device 100 by the objective lens 25 and irradiated. As a result, the CVD gas is decomposed by the thermal energy of the laser light,
As shown in (1), a small amount of metal film 11 is deposited near the position 1 to be processed. Also, with respect to the deposited small amount of metal film (metal-made convex local film) 11, it is shaped in a line symmetry or a point symmetry in the X and Y axis directions, or as shown in FIGS. When the removal processing is performed so as to carve patterns 12a to 12e that are line-symmetric or point-symmetric in the X-axis and Y-axis directions as shown in FIGS.
23, the power is increased to such an extent that the removal processing can be performed.
This can be realized by projecting the laser beam shaped in step 4.

Next, when an optical image from the semiconductor device 100 is picked up by the optical microscope 210 and displayed on the monitor 203, the images shown in FIGS. 2B and 7B are obtained. That is, in the visual field 35 of the optical microscope 210, the wiring patterns 103a, 103b, 103c having the portion 1 to be processed are provided.
And the image of the fine reference mark 11 applied by the application device 230 and heated and baked by the heating means 220 are detected in the visual field 38 of the SIM image. Therefore, the relative positional relationship (δ) between the fine reference mark 11 and the processing position 1 in the semiconductor device 100 is determined using an optical microscope (including a laser microscope) 210 having a length measuring function.
x, δy) are measured. In this measurement procedure, first, if necessary, first and second alignment marks (specific patterns) formed on the semiconductor device 100, as in Step 1 shown in FIGS. 2A and 7A. (It may be.) 120
, The semiconductor device 100 for the optical microscope 210
Is readjusted in the θ direction.

Next, the controller 201 sets the stage 2
2B, the optical image of the region 35 including the processing position 1 captured by the optical microscope 210 is displayed on the monitor 203 as shown in FIGS. 2B and 7B. Then, as shown in FIGS. 2B and 7B, the controller 201 displays the first cross cursor 36a on the monitor 203, and moves the first cross cursor 36a to the processing position 1. And the position coordinates of the machining position 1 are obtained from the position coordinates of the first cross cursor 36a. Next, the controller 201
(B), FIG. 7 (b), FIG. 8 (a), FIG. 8 (b), FIG.
(C) As shown in FIG. 8 (d), the second cross cursor 36b is displayed on the monitor 203, and the second cross cursor 36b is moved to finely intersect the intersection of the second cross cursor 36b. The center of the reference mark 11 is aligned with the center of the reference mark 11, and fine position coordinates of the reference mark 11 are acquired from the position coordinates of the second cross cursor 36b. Then, based on the positional relationship between the two cursors 36a and 36b acquired on the screen of the monitor 203, the controller 201 determines the relative distance (δx,
δy) is obtained, and the obtained relative distance (δx, δy) between the fine reference mark 11 and the processing position 1 is stored in the memory (storage device) 206. 7A and FIGS. 8A to 8D, the monitor 203
Patterns 12a to 12e that are line-symmetric or point-symmetric with respect to the intersection of the second cross cursor 36b in the X-axis and Y-axis directions.
It shows the case where it is aligned with the center of.

Then, the protective film 105 of the semiconductor device 100
The FIB processing apparatus that receives the data (δx, δy) of the processing position 1 for the fine reference mark 11 formed on the surface of the first embodiment is the same as in the first embodiment. As described above, in any of the first, second, and third embodiments, the fine reference mark 11 coated and baked or the fine reference mark 11 formed by laser CVD is less than that of FIG. As shown in FIG. 8 and FIG. 8, when the fine patterns 12 a to 12 d are applied to the reference mark, it is possible to realize high accuracy in both the position coordinate measurement based on the optical image and the setting of the processing area 2 based on the SIM image. it can.

Next, a description will be given of an embodiment in which the present invention is applied to other than the processing positioning in the FIB processing. That is, it is also effective in observation positioning by SEM. Since the surface of an object normally observed with a SEM has irregularities, even if there is no fine reference mark 11, the observation position is set to S.
It is possible to move to the center of the EM image. But,
When it is desired to observe a specific pattern among many repetitive patterns, moving the stage to that position and searching for an observation target requires a great deal of labor from the operator. In the case of the semiconductor device 100, a method of moving to the observation position based on the mark pattern originally formed around the chip is also possible. However, in the case of the semiconductor device 100 having a fine pattern such as a memory cell, the accuracy of the stage is also reduced. However, the stage may move to a position shifted by several cells, and if the observation target has minute irregularities that are difficult to observe without fine SEM image quality adjustment, labor is still required to find the observation position. . Therefore, if a fine reference mark 11 is provided within the screen of the same SEM image as the observation target, access to the observation target is facilitated by the same method as described above.
Furthermore, if the observation target can be introduced into the SEM like the semiconductor device 100, the stage can still be moved from the mark pattern of the semiconductor device itself to the vicinity of the observation target. In the case of a large flat panel display such as a TFT,
The panel is cut out for observation, and the entire section becomes a simple repetitive pattern. In this case, if this method of providing a fine reference mark 11 near the observation target while observing the microscope and accessing the observation position based on the reference mark 11 is not adopted, most of the time required for searching the observation position is the SEM operation time. It may be a situation that occupies.

Also in the SEM apparatus, by acquiring layout data from a CAD system, a tester, or the like via a network or the like, it is possible to more accurately set the SEM observation position. Next, the semiconductor device 1
The case where the fiducial mark 11 made of a metal film provided on the protective film 105 of No. 00 is used for FIB processing or positioning for SEM observation and then used as a pad for evaluating the characteristics of the semiconductor device 100 will be described with reference to FIG. . FIG.
FIG. 5 is a process diagram for using the metal film 11 formed as a reference mark as a characteristic evaluation pad. According to the method described in the first or second embodiment, the semiconductor device 10
Connection window 3 formed of processing area 2 on internal wiring 110
To expose a part of the internal wiring 110 (FIG. 15).
(A)). Next, after setting the FIB scanning area 2 wider than the size of the connection window 3, a CVD gas such as W (CO) ₆ or Mo (CO) ₆ is blown onto the connection window 3 to the scanning area. An atmosphere is formed, and FIB is irradiated and scanned for a predetermined time. As a result, the CVD gas is decomposed, and a metal 4 such as W or Mo is deposited in a region including the connection window 3, and
The connection window 3 is filled (FIG. 15B). Next, an FIB scanning area is set so as to connect the filling section 4 and the metal film 11. After the setting, the CVD gas is blown again to irradiate and scan the FIB for a predetermined time. As a result, W, Mo, or the like is deposited in the scanning area, and the filling portion 4 and the metal film 11 are deposited.
Are formed (FIG. 15C). The application of the present invention is not limited to the semiconductor device 100 formed up to the protective film 105, but naturally includes the semiconductor device 100 extracted during the manufacturing process. In particular, the semiconductor device 1 in which the interlayer insulating film 104 is planarized by a CMP process or the like.
With respect to 00, the application effect increases.

[0075]

According to the present invention, C is applied to the interlayer insulating film.
In an almost completed semiconductor device manufactured by flattening by an MP or the like and capable of performing an operation test, a fine image on a surface such as a protective film (insulating film) of which a SIM image such as an FIB and an optical image of an optical microscope can be confirmed. The fiducial mark is F
By forming it near the processing position such as IB,
Wiring patterns and foreign substances under the interlayer insulating film are
It is possible to easily and accurately specify a processing position of a FIB or the like as a processing target of an IB or the like. As a result, a wiring pattern, a foreign substance, or the like below the interlayer insulating film can be accurately specified as a processing target of the FIB or the like. Microfabrication using a charged particle beam such as FIB (wiring cutting processing, connection film forming processing between wirings via a protective film, cross-sectional processing for SIM or SEM observation, processing for exposing wiring and foreign matter, etc.) By performing such a process, there is an effect that a failure analysis, a partial repair, a characteristic evaluation, and the like are performed to shorten a development period. Further, according to the present invention, on the surface of a protective film or the like of a semiconductor device,
A fine fiducial mark is applied to the FIB
And so on, the alignment of the processing after confirmation of the reference mark can be performed only by operating the deflection scanning system such as the FIB, and a high-precision measuring instrument such as a laser length measuring instrument is provided on the stage. Without this, highly accurate charged particle beam processing such as FIB can be performed.

According to the present invention, since the film serving as the reference mark is formed of a conductive material, it can be used as a reference mark and then used as a pad for evaluating characteristics. Time can be reduced. Further, according to the present invention, even when an SEM observation is performed on an object on which a fine pattern is formed, a fine reference mark is provided in a screen of an image such as an SEM which is the same as the observation object, so that the SEM This makes it easy to find the observation position such as SEM, and has the effect of largely reducing the operation time of the SEM or the like.

[Brief description of the drawings]

FIG. 1 is a diagram showing a semiconductor device having a multilayer wiring layer having a planarized interlayer insulating film according to the present invention and almost completed so that an operation test can be performed by a tester;
(A) is an AA sectional view shown in (b), and (b) is a plan view seen from above the protective film.

FIG. 2 shows a reference mark providing step 1 according to the present invention, an optical measuring step 2 based on an optical image, and a FIB based on a SIM image.
FIG. 6 is a view for explaining a processing step 3 according to FIG.

FIG. 3 is a configuration diagram showing an embodiment of a reference mark providing / measuring device or a reference mark providing device according to the present invention.

FIG. 4 is a view showing an embodiment of an apparatus for applying a liquid material according to the present invention.

FIG. 5 is a view showing an embodiment different from FIG. 4 of the liquid material application apparatus according to the present invention.

FIG. 6 is a view showing an embodiment different from FIGS. 4 and 5 of the liquid material application apparatus according to the present invention.

FIG. 7 is a diagram for explaining a reference mark providing step 1 according to the present invention, an optical measurement step 2 based on an optical image, and a FIB processing step 3 based on a SIM image, which are different from FIG.

FIG. 8 is a diagram illustrating a case where various patterns different from those in FIG. 7 are removed to serve as fiducial marks for a local film formed on a protective film of a semiconductor device.

FIG. 9 is a configuration diagram showing one embodiment of an FIB processing apparatus according to the present invention.

FIG. 10 is a view showing an alignment mark provided on a peripheral portion of a surface of a semiconductor device according to the present invention.

FIG. 11 is a diagram showing a case where a plurality of reference marks according to the present invention are provided near a processing position.

FIG. 12 is a reference mark measurement (optical microscope) according to the present invention.
It is a lineblock diagram showing one embodiment of a FIB processing device.

FIG. 13 is a cross-sectional view showing one embodiment of a heating device for heating and firing a small amount of applied liquid material.

FIG. 14 is a configuration diagram showing another embodiment of the fiducial mark assigning / measuring device according to the present invention.

FIG. 15 is a view showing a processing step of the semiconductor device for characteristic evaluation according to the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Processing position, 2 ... Processing area (display box), 3 ... Connection window, 4 ... Metal filling part, 5 ... Connection wiring, 10 ... Liquid material, 11 ... Metal film (reference mark), 12a-12e ... Removal Mark (reference mark), 21, 21a, 21b: pipette, 22: moving mechanism, 25: objective lens, 26: table (stage), 31: pin, 32: moving mechanism, 33:
Container, 34 lid, 35 optical image, 36a first cross cursor, 36b second cross cursor, 38 S
IM image, 39: cross cursor, 51: processing room, 52
... Stage, 53 ... Door, 54 ... Vacuum pump, 55 ... Valve, 59 ... Secondary particle detector, 60 ... Image processing device,
61: FIB processing optical system (barrel), 62: ion source, 6
4: charged particle optical system, 67: deflection electrode, 68: ion beam (FIB), 70: optical microscope (laser microscope),
71: laser oscillator, 73: laser beam scanning means, 75:
Optical barrel, 77: Detector, 78: Image processing device, 7
9: Objective lens, 100: Semiconductor device, 101: Substrate,
102: oxide film, 103a to 103d: wiring pattern,
104a to 104c: interlayer insulating film, 105: protective film, 1
DESCRIPTION OF SYMBOLS 10 ... Wiring to process, 114 ... Image memory, 117 ... Monitor, 119 ... Stage controller, 121 ... Input means, 124 ... Controller, 131 ... Storage device (memory), 201 ... Controller, 202 ... Input means, 20
3 monitor, 204 image processor (image memory), 20
5 output means, 206 storage device (memory), 210
Optical microscope, 211: image sensor, 214: light source,
220 heating device, 221 laser light source, 223 power adjusting means, 224 variable aperture, 230 coating device, 232 liquid material supply source (pressurizing means), 231
Piping

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁶ Identification code FI H01L 21/302 D (72) Inventor Akira Shimase 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Prefecture, Hitachi, Ltd. (72) Inventor Takahiko Takahashi 3-16, Shinmachi, Shinmachi, Ome-shi, Tokyo Inside the Device Development Center, Hitachi, Ltd. (72) Inventor Yasuo Okabe 3-16, Shinmachi, Ome-shi, Tokyo Device Development, 3 Hitachi, Ltd. In the center (72) Inventor Kenichi Kyoya 3-16-16 Shinmachi, Ome-shi, Tokyo 3 Device Development Center, Hitachi, Ltd.

Claims (13)

[Claims] 1. A reference mark providing step of providing a reference mark observable by using light and charged particles on a top surface of a sample near a processing position of a charged beam, and a sample provided in the reference mark providing step. An optical image that includes an optical image including a reference mark on the uppermost surface and a processing position of the charged beam is captured by an optical microscope, and the relative distance between the reference mark and the processing position of the charged beam is measured based on the captured optical image. A measuring step, and irradiating the reference mark on the uppermost surface of the sample provided in the reference mark applying step with a charged beam to detect a secondary charged particle image of the reference mark, and secondary charging of the detected reference mark For the particle image, specify the irradiation area of the charged beam based on the relative distance between the reference mark measured in the optical measurement step and the processing position of the charged beam, and the specified Working method using a charged beam, comprising morphism a machining step of performing machining by irradiating a charged particle beam in the region. 2. A reference mark observable by using light and charged particles is provided on a protective film surface of a semiconductor device comprising a multilayer wiring layer having a planarized interlayer insulating film in the vicinity of an irradiation position of a charged beam. An optical image including a reference mark providing step to be performed and a reference mark on the protective film surface of the semiconductor device provided in the reference mark providing step and a processing position of the charged beam, which is taken by an optical microscope, and the captured optical image is taken. An optical measurement step of measuring the relative distance between the reference mark and the processing position of the charged beam based on A secondary charged particle image of the mark is detected, and the reference mark and the charged beam measured in the optical measurement step are compared with the secondary charged particle image of the detected reference mark. A processing step of specifying an irradiation area of the charged beam based on a relative distance to a processing position of the laser beam and irradiating the specified irradiation area with the charged beam to perform processing. . 3. The semiconductor device according to claim 2, wherein said semiconductor device is substantially completed so that an operation test can be performed.
Processing method using the charged beam described. 4. The processing method using a charged beam according to claim 1, wherein a small amount of a liquid material is locally applied and heated and baked to provide a reference mark in the reference mark providing step. 5. A reference mark providing step of providing a reference mark observable using light and charged particles on the uppermost surface of the sample in the vicinity of the irradiation position of the charged beam, and a sample provided in the reference mark providing step. An optical image including a reference mark on the uppermost surface and an irradiation position of the charged beam is captured by an optical microscope, and an optical system for measuring a relative distance between the reference mark and the irradiation position of the charged beam based on the captured optical image. A measuring step, and irradiating the reference mark on the uppermost surface of the sample provided in the reference mark applying step with a charged beam to detect a secondary charged particle image of the reference mark, and secondary charging of the detected reference mark For the particle image, the irradiation area of the charged beam is specified based on the relative distance between the reference mark measured in the optical measurement step and the irradiation position of the charged beam, and the specified area is specified. Observation method by the charged beam; and a observation step of observing the secondary charged particle image obtained from elevation irradiated area by irradiating a charged particle beam in the region. 6. The observation method using a charged beam according to claim 5, wherein, in the reference mark providing step, a small amount of a liquid material is locally applied, and heated and fired to provide a reference mark. 7. A reference mark providing device for providing a reference mark observable by using light and charged particles on a top surface of a sample near a processing position of a charged beam, and a sample provided by the reference mark providing device. An optical microscope that captures an optical image including a reference mark on the uppermost surface and a processing position of the charged beam, and a relative distance between the reference mark and the processing position of the charged beam based on the optical image captured by the optical microscope. An optical measuring device having a measuring means for measuring, a charged beam is applied to the reference mark on the uppermost surface of the sample provided by the reference mark providing device, and a secondary charged particle image of the reference mark is detected. Based on the relative distance between the reference mark measured by the measuring means of the optical measuring device and the processing position of the charged beam with respect to the secondary charged particle image of the reference mark. Processing system according to a charged beam to identify the illuminated region of the charged particle beam, and having a charged beam processing apparatus for performing processing by irradiating a charged particle beam to the irradiation region that is the identified. 8. A reference mark observable by using light and charged particles is provided on a protective film surface of a semiconductor device comprising a multilayer wiring layer having a planarized interlayer insulating film in the vicinity of an irradiation position of a charged beam. A reference mark providing device, an optical microscope that captures an optical image including a reference mark on the protective film surface of the semiconductor device provided by the reference mark providing device and a processing position of the charged beam, and an image captured by the optical microscope. An optical measuring device having measuring means for measuring the relative distance between the reference mark and the processing position of the charged beam based on the optical image obtained, and charging the reference mark on the protective film surface of the semiconductor device provided by the reference mark providing device. A beam is irradiated to detect a secondary charged particle image of the fiducial mark, and the optical measurement device is applied to the detected secondary charged particle image of the fiducial mark. Charged beam processing in which the irradiation area of the charged beam is specified based on the relative distance between the reference mark measured by the measuring means and the processing position of the charged beam, and the specified irradiation area is irradiated with the charged beam to perform the processing. And a processing system using a charged beam. 9. The semiconductor device according to claim 8, wherein said semiconductor device is substantially completed so that an operation test can be performed.
Processing system by the charged beam described. 10. The apparatus according to claim 1, wherein the reference mark applying device includes an application unit for locally applying a small amount of the liquid material, and a heating unit for heating and firing the small amount of the liquid material applied by the application unit. Item 7. A processing system using a charged beam according to Item 7, 8, or 9. 11. The processing system using a charged beam according to claim 10, wherein said heating means is constituted by a laser beam irradiating means capable of performing removal processing. 12. A reference mark providing device for providing a reference mark observable by using light and charged particles on the uppermost surface of the sample in the vicinity of the irradiation position of the charged beam, and a sample provided by the reference mark providing device. An optical microscope that captures an optical image including the reference mark on the top surface and the irradiation position of the charged beam, and a relative distance between the reference mark and the irradiation position of the charged beam based on the optical image captured by the optical microscope. An optical measuring device having a measuring means for measuring, detecting a secondary charged particle image of the reference mark by irradiating the reference mark on the uppermost surface of the sample provided by the reference mark providing device with a charged beam; The secondary charged particle image of the reference mark is determined based on the relative distance between the reference mark measured by the measuring means of the optical measuring device and the irradiation position of the charged beam. A charged beam observation device for irradiating the specified irradiation region with the charged beam and observing a secondary charged particle image obtained from the irradiation region. Observation system. 13. The reference mark applying apparatus according to claim 1, further comprising an application unit for locally applying a small amount of the liquid material, and a heating unit for heating and firing the small amount of the liquid material applied by the application unit. Item 13. An observation system using a charged beam according to Item 12.