JPH11265931A - Vacuum processor - Google Patents
Vacuum processorInfo
- Publication number
- JPH11265931A JPH11265931A JP32453398A JP32453398A JPH11265931A JP H11265931 A JPH11265931 A JP H11265931A JP 32453398 A JP32453398 A JP 32453398A JP 32453398 A JP32453398 A JP 32453398A JP H11265931 A JPH11265931 A JP H11265931A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric plate
- intermediate dielectric
- plate
- gas
- mounting table
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、例えば半導体ウエ
ハ等の被処理基板を載置台に静電吸着させて真空処理を
行う装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for performing vacuum processing by electrostatically attracting a substrate to be processed, such as a semiconductor wafer, to a mounting table.
【0002】[0002]
【従来の技術】半導体ウエハに集積回路を形成する工程
として、成膜やエッチングなどを行うために真空中で処
理する工程がある。このような真空処理はウエハWを真
空チャンバ内の載置台に載置させて行われるが、載置台
に設けられた温調手段によりウエハを所定の温度に均一
に維持させるためには、ウエハを載置台に押し付けるこ
とが必要である。真空中では真空チャックを使用できな
いため、例えば静電気力でウエハを載置台表面に吸着保
持する静電チャックが使用されている。2. Description of the Related Art As a step of forming an integrated circuit on a semiconductor wafer, there is a step of performing processing in a vacuum for performing film formation, etching, and the like. Such vacuum processing is performed by mounting the wafer W on a mounting table in a vacuum chamber.In order to uniformly maintain the wafer at a predetermined temperature by temperature control means provided on the mounting table, the wafer W It is necessary to press against the mounting table. Since a vacuum chuck cannot be used in a vacuum, an electrostatic chuck that attracts and holds a wafer on the mounting table surface by, for example, electrostatic force is used.
【0003】図13に真空処理装置としてECR(電子
サイクロトロン共鳴)を利用したプラズマ処理装置を例
にとって、載置台も含めた全体の概略構成を示す。この
真空処理装置は、プラズマ生成室1A内に例えば2.4
5GHzのマイクロ波を導波管11を介して供給すると
共に、例えば875ガウスの磁界を電磁コイル12によ
り印加して、マイクロ波と磁界との相互作用でプラズマ
生成用ガス例えばArガスやO2 ガスを高密度プラズマ
化し、このプラズマにより成膜室1B内に導入された反
応性ガス例えばSiH4 ガスを活性化させて半導体ウエ
ハW表面に薄膜を形成するものである。FIG. 13 shows an overall schematic configuration including a mounting table of a plasma processing apparatus using ECR (Electron Cyclotron Resonance) as an example of a vacuum processing apparatus. This vacuum processing apparatus has, for example, 2.4 in the plasma generation chamber 1A.
A microwave of 5 GHz is supplied through the waveguide 11, and a magnetic field of, for example, 875 Gauss is applied by the electromagnetic coil 12, and a plasma generation gas, for example, an Ar gas or an O 2 gas is generated by the interaction between the microwave and the magnetic field. Is formed into a high-density plasma, and a reactive gas, for example, a SiH 4 gas introduced into the film forming chamber 1B is activated by the plasma to form a thin film on the surface of the semiconductor wafer W.
【0004】ここで載置台10について説明すると、載
置台10は例えばアルミニウムからなる載置台本体13
の上面に、例えばバイトン、カルレッツ等の樹脂製のO
リング14を介して誘電体プレ−ト15を設けて構成さ
れている。この誘電体プレ−ト15は、その内部の表面
近傍に例えばタングステンからなる金属電極16が設け
られており、表面部が静電チャックとして構成されてい
る。また前記載置台本体13内には冷媒流路17が設け
られると共に、誘電体プレ−ト15内には例えばタング
ステンの電極からなるヒ−タ18が設けられている。The mounting table 10 will now be described. The mounting table 10 is made of, for example, a mounting table body 13 made of aluminum.
On the upper surface of the resin O, for example, Viton, Kalrez, etc.
A dielectric plate 15 is provided via a ring 14. The dielectric plate 15 is provided with a metal electrode 16 made of, for example, tungsten near the inner surface thereof, and the surface portion is configured as an electrostatic chuck. A coolant channel 17 is provided in the mounting table body 13, and a heater 18 made of, for example, a tungsten electrode is provided in the dielectric plate 15.
【0005】前記載置台本体13の表面と誘電体プレ−
ト15の裏面とは共に完全な平坦面ではないので、両者
を単に重ねただけでは両者の間にはわずかな隙間が形成
されることになるが、この載置台10は真空中に置かれ
るため、この隙間が断熱領域となってしまう。このため
既述のようにOリング14を介在させ、Oリング14に
より閉じ込められた領域にHeガスを供給して均一な熱
伝導を確保するようにしている。[0005] The surface of the mounting table body 13 and the dielectric plate
Since both of the back surface and the back surface of the gate 15 are not completely flat surfaces, a mere gap between them will form a slight gap between them, but since the mounting table 10 is placed in a vacuum, This gap becomes a heat insulating area. For this reason, as described above, the O-ring 14 is interposed, and He gas is supplied to the region confined by the O-ring 14 to ensure uniform heat conduction.
【0006】このような載置台10は、既述のようにウ
エハWを静電気力で載置面上に吸着保持するものである
が、ウエハWを所定温度に加熱するという役割をも果た
しており、冷媒を冷媒流路17に通流させることにより
載置台本体13の表面を150℃に調整して基準温度を
得、ヒ−タ18との組み合わせによりウエハを常に一定
温度にコントロ−ルしている。Although the mounting table 10 holds the wafer W on the mounting surface by electrostatic force as described above, the mounting table 10 also plays a role of heating the wafer W to a predetermined temperature. The reference temperature is obtained by adjusting the surface of the mounting table body 13 to 150 ° C. by flowing the cooling medium through the cooling medium flow path 17, and the wafer is always controlled at a constant temperature by combination with the heater 18. .
【0007】[0007]
【発明が解決しようとする課題】上述の載置台10で
は、載置台本体13と誘電体プレ−ト15の間にOリン
グ14が設けられているが、このOリング14は樹脂製
であって耐熱温度がせいぜい200℃であるため、それ
以上の温度になると変質してしまい、気密性を保持でき
なくなってしまう。従ってOリング14と接触する誘電
体プレ−ト15の裏面側を200℃以上にすることはで
きない。In the above-described mounting table 10, an O-ring 14 is provided between the mounting table body 13 and the dielectric plate 15, but this O-ring 14 is made of resin. Since the heat-resistant temperature is at most 200 ° C., if the temperature is higher than that, the material is denatured and the airtightness cannot be maintained. Therefore, the back side of the dielectric plate 15 which is in contact with the O-ring 14 cannot be heated to 200 ° C. or more.
【0008】ところで近年デバイスの動作についてより
一層の高速化を図るために、層間絶縁膜をSiO2 膜よ
りも比誘電率が低いSiOF膜又はCFx膜により形成
することが進められている。このSiOF膜又はCFx
膜も上述のECRプラズマ装置において成膜できるが、
処理はSiO2 膜よりも高温で行なわれ、プロセス中の
誘電体プレ−ト15の表面は320〜400℃程度の温
度にすることが要求される。In recent years, in order to further increase the operation speed of the device, formation of an interlayer insulating film of a SiOF film or a CFx film having a lower dielectric constant than that of a SiO 2 film has been promoted. This SiOF film or CFx
The film can also be formed in the above ECR plasma apparatus,
The process is performed at a higher temperature than the SiO 2 film, and the surface of the dielectric plate 15 during the process is required to be at a temperature of about 320 to 400 ° C.
【0009】ここで前記誘電体プレ−ト15は焼結体で
あるため厚さの大きいものを製造することは困難であ
り、厚くてもせいぜい十数mm程度が限度である。この
程度の厚さでは、仮に誘電体プレ−ト15の表面が32
0℃程度になるまで加熱すると、当該プレ−ト15の裏
面側の温度は300℃程度になってしまうので、このよ
うな高温プロセスでは上述の載置台10を用いることが
できない。Here, since the dielectric plate 15 is a sintered body, it is difficult to produce a thick one, and even if it is thick, the limit is about ten and several mm at most. With such a thickness, if the surface of the dielectric plate 15 is 32
When heated to about 0 ° C., the temperature on the back side of the plate 15 becomes about 300 ° C., so that the mounting table 10 cannot be used in such a high-temperature process.
【0010】本発明は、このような事情の下になされた
ものであり、その目的は、高温のプロセスにおいても載
置台に設けられたOリングの変質を抑え、また面内均一
性の高い真空処理を行うことができる真空処理装置を提
供することにある。The present invention has been made under such circumstances, and it is an object of the present invention to suppress deterioration of an O-ring provided on a mounting table even in a high-temperature process, and to provide a vacuum with high in-plane uniformity. It is to provide a vacuum processing apparatus capable of performing processing.
【0011】[0011]
【課題を解決するための手段】このため本発明は、真空
室と、この真空室内に設けられた被処理基板の載置台と
を備え、誘電体プレ−トに加熱手段と被処理基板吸着用
の静電チャックを構成するための電極とを設け、この誘
電体プレ−トを冷却手段を備えた載置台本体の上に設け
て前記載置台を構成した真空処理装置において、前記載
置台本体の表面にリング状の樹脂製シ−ル材を介して接
合され、静電チャックを構成するための電極が表面部に
埋め込まれた中間誘電体プレ−トと、前記シ−ル材で囲
まれた領域に熱伝導用の気体を供給するための手段とを
備え、前記中間誘電体プレ−トの表面に、当該中間誘電
体プレ−トの静電チャックによる静電気力により前記誘
電体プレ−トを接合したことを特徴とする。この際前記
中間誘電体プレ−トは複数枚設けてもよいし、前記中間
誘電体プレ−トに加熱手段を設けてもよい。SUMMARY OF THE INVENTION Accordingly, the present invention provides a vacuum chamber, and a mounting table for a substrate to be processed provided in the vacuum chamber. And an electrode for constituting the electrostatic chuck, and the dielectric plate is provided on a mounting table main body provided with cooling means to constitute the mounting table. An intermediate dielectric plate, which is bonded to the surface via a ring-shaped resin seal material and has an electrode for constituting an electrostatic chuck embedded in the surface, is surrounded by the seal material. Means for supplying a gas for heat conduction to the region, wherein the dielectric plate is applied to the surface of the intermediate dielectric plate by electrostatic force generated by an electrostatic chuck of the intermediate dielectric plate. It is characterized by being joined. At this time, a plurality of the intermediate dielectric plates may be provided, or a heating means may be provided on the intermediate dielectric plate.
【0012】また本発明は、真空室と、この真空室内に
設けられた被処理基板の載置台とを備え、誘電体プレ−
トに加熱手段と被処理基板吸着用の静電チャックを構成
するための電極とを設け、この誘電体プレ−トを冷却手
段を備えた載置台本体の上に設けて前記載置台を構成し
た真空処理装置において、前記載置台本体と誘電体プレ
−トとの間に設けられた中間誘電体プレ−トと、前記中
間誘電体プレ−トと誘電体プレ−トとの接合面に熱伝導
用の気体を供給するための手段とを備え、前記中間誘電
体プレ−トと誘電体プレ−トとの接合面に熱伝導用の気
体を供給し、当該接合面内の前記熱伝導用の気体の圧力
を調整することにより、前記中間誘電体プレ−トと誘電
体プレ−トとの間の熱伝導度を制御することを特徴とす
る。The present invention also includes a vacuum chamber and a mounting table for a substrate to be processed provided in the vacuum chamber.
A heating means and an electrode for forming an electrostatic chuck for adsorbing a substrate to be processed are provided on the plate, and the dielectric plate is provided on a mounting table body provided with a cooling means to constitute the mounting table described above. In the vacuum processing apparatus, an intermediate dielectric plate provided between the mounting table main body and the dielectric plate, and heat conduction to a joint surface between the intermediate dielectric plate and the dielectric plate. Means for supplying a gas for heat conduction to a joint surface between the intermediate dielectric plate and the dielectric plate, and supplying a gas for heat conduction to the joint surface between the intermediate dielectric plate and the dielectric plate. The thermal conductivity between the intermediate dielectric plate and the dielectric plate is controlled by adjusting the pressure of the gas.
【0013】この際前記中間誘電体プレ−トと誘電体プ
レ−トとの接合面に凹凸が形成され、これにより前記中
間誘電体プレ−トと誘電体プレ−トとの接合面に形成さ
れた隙間に熱伝導用の気体が供給されるようにしてもよ
い。また前記中間誘電体プレ−トに静電チャックを構成
するための電極が埋め込み、前記中間誘電体プレ−トと
誘電体プレ−トとを静電チャックの静電気力により接合
するようにしてもよい。 At this time, irregularities are formed on the joint surface between the intermediate dielectric plate and the dielectric plate, thereby forming the joint surface between the intermediate dielectric plate and the dielectric plate. A gas for heat conduction may be supplied to the gap. Further, an electrode for forming an electrostatic chuck may be embedded in the intermediate dielectric plate, and the intermediate dielectric plate and the dielectric plate may be joined by the electrostatic force of the electrostatic chuck. .
【0014】さらに本発明は、真空室と、この真空室内
に設けられた被処理基板の載置台とを備え、誘電体プレ
−トに加熱手段と被処理基板吸着用の静電チャックを構
成するための電極とを設け、この誘電体プレ−トを冷却
手段を備えた冷却部の上に設けて前記載置台を構成した
真空処理装置において、前記誘電体プレ−トの被処理基
板の載置面と反対の面側に設けられ、静電チャックを構
成するための電極が埋め込まれた中間誘電体プレ−トを
備え、前記中間誘電体プレ−トと冷却部とを静電チャッ
クの静電気力により接合したことを特徴とする。Further, the present invention comprises a vacuum chamber and a mounting table for the substrate to be processed provided in the vacuum chamber, wherein a heating means and an electrostatic chuck for attracting the substrate to be processed are formed on the dielectric plate. And a dielectric plate provided on a cooling unit provided with a cooling means to constitute a mounting table, in which a substrate to be processed is placed on the dielectric plate. An intermediate dielectric plate provided on the side opposite to the surface and having electrodes embedded therein for forming an electrostatic chuck, wherein the intermediate dielectric plate and the cooling unit are electrostatically driven by the electrostatic force of the electrostatic chuck; It is characterized by being joined by.
【0015】ここで本発明においては前記冷却部と中間
誘電体プレ−トとの接合面に熱伝導用の気体を供給し、
当該接合面内の前記熱伝導用の気体の圧力を調整するこ
とにより、前記冷却部と中間誘電体プレ−トとの間の熱
伝導度を制御するようにしてもよいし、誘電体プレ−ト
と中間誘電体プレ−トとの間に導電性プレ−トを設け、
さらにこれらの接合面に熱伝導用の気体を供給し、当該
接合面内の前記熱伝導用の気体の圧力を調整することに
より、前記中間誘電体プレ−トと導電性プレ−トとの間
の熱伝導度を制御するようにしてもよい。In the present invention, a gas for heat conduction is supplied to a joint surface between the cooling section and the intermediate dielectric plate,
The thermal conductivity between the cooling unit and the intermediate dielectric plate may be controlled by adjusting the pressure of the gas for heat conduction in the joint surface, or the dielectric plate may be controlled. A conductive plate is provided between the plate and the intermediate dielectric plate,
Further, a gas for heat conduction is supplied to these joint surfaces, and the pressure of the gas for heat conduction in the joint surfaces is adjusted, whereby a gap between the intermediate dielectric plate and the conductive plate is formed. May be controlled.
【0016】[0016]
【発明の実施の形態】以下に本発明の第1の実施の形態
について説明するが、本実施の形態は真空処理装置にお
いて、静電チャック用電極と加熱手段とを埋め込んだ誘
電体プレ−トとリング状の樹脂製シ−ル材との間に、静
電チャック用の電極が埋め込まれた中間誘電体プレ−ト
を介在させ、この中間誘電体プレ−トと前記誘電体プレ
−トとを静電気力により接合させることにより、中間誘
電体プレ−トと誘電体プレ−トとの熱伝導の面内均一性
を向上させながら、加熱手段とシ−ル材との間を熱的に
分離し、高温のプロセスにおいてもシ−ル材が熱により
変質しないようにするものである。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention will be described below. In the present embodiment, a dielectric plate in which an electrode for electrostatic chuck and a heating means are embedded in a vacuum processing apparatus is described. An intermediate dielectric plate in which an electrode for electrostatic chuck is embedded is interposed between the intermediate dielectric plate and the ring-shaped resin seal material. Is thermally separated from the heating means and the sealing material by improving the in-plane uniformity of the heat conduction between the intermediate dielectric plate and the dielectric plate by joining them with electrostatic force. Further, the sealing material is prevented from being deteriorated by heat even in a high-temperature process.
【0017】図1は本発明を真空処理装置例えばECR
プラズマ装置に適用した実施の形態を示す概略断面図で
あり、図2は被処理基板例えば半導体ウエハ(以下ウエ
ハという)の載置台を示す断面図である。先ずECRプ
ラズマ装置の全体構成について簡単に説明すると、この
装置は真空容器2の上部側のプラズマ室21内に、高周
波電源部20よりの例えば2.45GHzのマイクロ波
Mを導波管22から透過窓23を介して導くと共に、プ
ラズマガス用ノズル24からプラズマ室21内にArガ
スやO2 ガス等のプラズマガスを供給し、更にプラズマ
室21の外側に設けた電磁コイル25により磁界Bを印
加して電子サイクロトロン共鳴を発生させるように構成
されている。また真空容器2の下部側の反応室26にお
いては、反応性ガスノズル27が突入されて反応性ガス
供給部28を介して反応性ガスが供給されるように構成
されている。また反応室26の底部には排気管29が接
続されている。FIG. 1 shows a vacuum processing apparatus such as an ECR according to the present invention.
FIG. 2 is a schematic sectional view showing an embodiment applied to a plasma apparatus, and FIG. 2 is a sectional view showing a mounting table for a substrate to be processed, for example, a semiconductor wafer (hereinafter, referred to as a wafer). First, the overall configuration of the ECR plasma apparatus will be briefly described. This apparatus transmits a microwave M of, eg, 2.45 GHz from a high-frequency power supply unit 20 from a waveguide 22 into a plasma chamber 21 on the upper side of a vacuum vessel 2. A plasma gas such as an Ar gas or an O 2 gas is supplied into the plasma chamber 21 from the plasma gas nozzle 24 while being guided through the window 23, and a magnetic field B is applied by an electromagnetic coil 25 provided outside the plasma chamber 21. To generate electron cyclotron resonance. In the reaction chamber 26 on the lower side of the vacuum vessel 2, a reactive gas nozzle 27 is inserted and a reactive gas is supplied via a reactive gas supply unit 28. An exhaust pipe 29 is connected to the bottom of the reaction chamber 26.
【0018】そして反応室26の内部には、被処理基板
であるウエハを保持するための載置台3が昇降自在に設
けられている。この載置台3は、例えば冷却部31の上
に1枚以上例えば2枚の中間誘電体プレ−ト4A,4B
を積層して設け、この上面にウエハW載置用の誘電体プ
レ−ト5を設けて構成されている。なお前記誘電体とは
一般にいう絶縁体の他に半導体をも含むものである。こ
のような載置台3は円柱状の支持部材33の上部に設け
られており、前記支持部材33は真空容器2の底壁Tを
貫通するように設けられていて、真空容器2に対して気
密性を保持しつつ昇降できるように構成されている。A mounting table 3 for holding a wafer as a substrate to be processed is provided inside the reaction chamber 26 so as to be movable up and down. The mounting table 3 includes, for example, one or more, for example, two intermediate dielectric plates 4A and 4B on the cooling unit 31.
And a dielectric plate 5 for mounting the wafer W is provided on the upper surface thereof. The dielectric includes a semiconductor in addition to a general insulator. Such a mounting table 3 is provided above a columnar support member 33, and the support member 33 is provided so as to penetrate the bottom wall T of the vacuum vessel 2, and is airtight with respect to the vacuum vessel 2. It is configured to be able to ascend and descend while maintaining the characteristics.
【0019】続いて載置台3の詳細について図2により
説明する。前記冷却部31は例えばアルミニウムにより
構成され、内部に冷媒を通流させるための冷媒流路32
が設けられている。この冷媒は例えば150℃に正確に
温度調整されて、冷却部31の表面を均一な基準温度面
とする役割を果たしている。この冷却部31の上面には
例えばバイトン、カルレッツ等の樹脂により構成された
樹脂製シ−ル材をなすOリング33を介して第1の中間
誘電体プレ−ト4Aと第2の中間誘電体プレ−ト4Bと
が積層して設けられている。Next, the mounting table 3 will be described in detail with reference to FIG. The cooling section 31 is made of, for example, aluminum, and has a coolant flow path 32 for allowing a coolant to flow therethrough.
Is provided. The temperature of the refrigerant is accurately adjusted to, for example, 150 ° C., and serves to make the surface of the cooling unit 31 a uniform reference temperature surface. The first intermediate dielectric plate 4A and the second intermediate dielectric are provided on the upper surface of the cooling unit 31 via an O-ring 33 made of a resin seal material made of a resin such as Viton or Kalrez. The plate 4B is provided in a laminated manner.
【0020】この両プレ−ト4A、4B間のOリング3
3により囲まれた気密な領域には、真空雰囲気に対して
陽圧例えば200Torrの圧力をかけた状態で熱伝導
ガス例えばHe(ヘリウム)ガスが封入されている。こ
のHeガスは冷却部31と第1の中間誘電体プレ−ト4
Aとの間において熱を均一に伝導する役割を果たしてい
る。The O-ring 3 between the plates 4A, 4B
A heat conductive gas, for example, He (helium) gas is sealed in an airtight region surrounded by 3 in a state where a positive pressure, for example, 200 Torr is applied to the vacuum atmosphere. This He gas is supplied to the cooling section 31 and the first intermediate dielectric plate 4.
A plays a role of uniformly conducting heat between the A.
【0021】前記各誘電体プレ−ト4A、4B、5は、
例えばいずれもAlN(窒化アルミニウム)等の誘電体
により構成され、例えば厚さ15mm、直径196〜2
05mm(8インチのウエハを処理する場合)の円形状
に成形されている。これら誘電体プレ−ト4A、4B、
5には、表面側に近い位置に例えばタングステン箔より
なる静電チャック用の電極41(51)が埋設されて表
面部が静電チャックとして構成されると共に、さらにそ
の内部に加熱手段である抵抗発熱体よりなるヒ−タ42
(52)が埋設されている。Each of the dielectric plates 4A, 4B, 5 is
For example, each is made of a dielectric material such as AlN (aluminum nitride), and has a thickness of 15 mm and a diameter of 196 to 2 for example.
It is formed in a circular shape of 05 mm (when processing an 8-inch wafer). These dielectric plates 4A, 4B,
5, an electrode 41 (51) for electrostatic chuck made of, for example, tungsten foil is buried at a position close to the front surface side, the surface portion is configured as an electrostatic chuck, and a resistance as a heating means is further provided inside the electrostatic chuck. Heater 42 composed of a heating element
(52) is buried.
【0022】前記電極41(51)及びヒ−タ42(5
2)については図示の便宜上略解的に記載してあるが、
実際には図3にて誘電体プレ−ト5を代表して示すよう
に、電極51(51a,51b)は例えば双極であり、
これらの電極51には給電線53によりスイッチ54を
介して静電チャック用の直流電源55が接続されてい
る。さらに電極51にはウエハWにイオンを引き込むた
めのバイアス電圧を印加するように高周波電源部56も
接続されている。またヒ−タ52を構成する抵抗発熱体
の両端には夫々給電線57が接続されており、この給電
線57を介して電源部58が接続されている。なお給電
線53、57は夫々筒状体53a、57a内に挿入され
ている。また誘電体プレ−ト5の裏面側(第2の中間誘
電体プレ−ト4B側)の表面に近い位置には、便宜上図
示はしていないが、第2の中間誘電体プレ−ト4Bの電
極41の対向電極が埋設されており、この対向電極には
図示しない静電チャック用の直流電源が接続されてい
る。同様に第2の中間誘電体プレ−ト4Bの裏面側(第
1の中間誘電体プレ−ト4A側)の表面に近い位置に
は、第1の中間誘電体プレ−ト4Aの電極41の対向電
極が埋設されている。これにより誘電体プレ−ト5と第
2の中間誘電体プレ−ト4Bとの間、及び第2の中間誘
電体プレ−ト4Bと第1の中間誘電体プレ−ト4Aとの
間では静電気力が発生し、静電吸着が行われるが、仮に
誘電体プレ−ト5や第2の中間誘電体プレ−ト4Bの裏
面側に対向電極を設けない場合であっても、これらのプ
レ−トにヒ−タ52,42が設けられているので、この
ヒ−タ52,42と電極41とにより静電吸着が行われ
る。The electrode 41 (51) and the heater 42 (5)
Although 2) is schematically described for convenience of illustration,
Actually, as shown in FIG. 3 as a representative of the dielectric plate 5, the electrodes 51 (51a, 51b) are, for example, bipolar.
A DC power supply 55 for electrostatic chuck is connected to these electrodes 51 via a switch 54 via a power supply line 53. Further, a high-frequency power supply unit 56 is connected to the electrode 51 so as to apply a bias voltage for drawing ions into the wafer W. A power supply line 57 is connected to both ends of the resistance heating element constituting the heater 52, and a power supply 58 is connected via the power supply line 57. The power supply lines 53 and 57 are inserted into the tubular bodies 53a and 57a, respectively. Although not shown for the sake of convenience, the position of the second intermediate dielectric plate 4B is located at a position close to the front surface of the dielectric plate 5 on the back surface side (the second intermediate dielectric plate 4B side). A counter electrode of the electrode 41 is embedded, and a DC power supply for an electrostatic chuck (not shown) is connected to the counter electrode. Similarly, the electrode 41 of the first intermediate dielectric plate 4A is located at a position near the front surface of the second intermediate dielectric plate 4B (on the side of the first intermediate dielectric plate 4A). A counter electrode is embedded. Thereby, static electricity is generated between the dielectric plate 5 and the second intermediate dielectric plate 4B and between the second intermediate dielectric plate 4B and the first intermediate dielectric plate 4A. Although a force is generated and electrostatic attraction is performed, even if the counter electrode is not provided on the back surface side of the dielectric plate 5 or the second intermediate dielectric plate 4B, these plates are used. Since the heaters 52 and 42 are provided on the heater, electrostatic attraction is performed by the heaters 52 and 42 and the electrode 41.
【0023】このような載置台3は、冷却部31と第1
及び第2の中間誘電体プレ−ト4A、4Bを貫通して誘
電体プレ−ト5の下部側に至るように、各部材の周縁領
域例えば電極41、51の外側の領域に形成された図示
しないネジ孔にネジ36を螺合させることにより、各部
材がネジ止めによって着脱自在に接合されるように構成
されている。The mounting table 3 has a cooling section 31 and a first section.
And a peripheral region of each member, such as a region outside the electrodes 41 and 51, penetrating through the second intermediate dielectric plates 4A and 4B and reaching the lower side of the dielectric plate 5. By screwing a screw 36 into a screw hole not to be formed, each member is detachably joined by screwing.
【0024】続いて上述の実施の形態の作用について、
ウエハW上に層間絶縁膜であるSiOF膜を成膜する場
合を例にとって説明する。先ず図示しないロ−ドロック
室から図示しない搬送ア−ムにより、ウエハWの受け渡
し位置にある載置台3の誘電体プレ−ト5上に、載置台
3に内蔵された図示しないリフトピンとの協動作用によ
りウエハWを受け渡し、ウエハWを当該誘電体プレ−ト
5上に静電吸着させる。このとき電極41の印加電圧は
例えば1.5kVであり、電極51の印加電圧は例えば
1.5kVである。Next, the operation of the above embodiment will be described.
The case where a SiOF film as an interlayer insulating film is formed on the wafer W will be described as an example. First, a transfer arm (not shown) moves from a load lock chamber (not shown) to the dielectric plate 5 of the mounting table 3 at the transfer position of the wafer W and cooperates with a lift pin (not shown) built in the mounting table 3. The wafer W is transferred by hand and the wafer W is electrostatically attracted onto the dielectric plate 5. At this time, the applied voltage of the electrode 41 is, for example, 1.5 kV, and the applied voltage of the electrode 51 is, for example, 1.5 kV.
【0025】続いて載置台3を支持部材33によりプロ
セス位置まで上昇させ、冷却手段である冷媒流路32の
冷媒及びヒ−タ42、52の組み合わせによりウエハW
の温度を所定の温度例えば340℃に加熱する。一方排
気管29により真空容器2内を所定の真空度に維持しな
がら、プラズマガス用ノズル24からプラズマガス例え
ばArガス及びO2 ガスと、反応性ガス用ノズル27か
ら反応性ガス例えばSiH4 ガス、O2 ガス、SiF4
ガスとを夫々所定の流量で導入する。そして反応室26
内に流れ込んだプラズマイオンにより前記反応性ガスを
活性化させてウエハW上にSiOF膜を生成する。Subsequently, the mounting table 3 is raised to the process position by the support member 33, and the wafer W is moved by the combination of the cooling medium and the heaters 42 and 52 in the cooling medium flow path 32.
Is heated to a predetermined temperature, for example, 340 ° C. On the other hand, while the inside of the vacuum vessel 2 is maintained at a predetermined degree of vacuum by the exhaust pipe 29, a plasma gas such as Ar gas and O 2 gas from the plasma gas nozzle 24, and a reactive gas such as SiH 4 gas from the reactive gas nozzle 27. , O 2 gas, SiF 4
And gas are introduced at a predetermined flow rate. And the reaction chamber 26
The reactive gas is activated by the plasma ions flowing into the inside, and an SiOF film is formed on the wafer W.
【0026】この際載置台3では、図4に示すように、
冷却部31の表面は冷媒により150℃に調整されてお
り、第1の中間誘電体プレ−ト4Aの表面はヒ−タ42
により例えば200℃程度、第2の中間誘電体プレ−ト
4Bの表面はヒ−タ42により例えば270℃程度、誘
電体プレ−ト5の表面はヒ−タ52により例えば340
℃程度に調整されている。At this time, on the mounting table 3, as shown in FIG.
The surface of the cooling section 31 is adjusted to 150 ° C. by a refrigerant, and the surface of the first intermediate dielectric plate 4A is heated by a heater 42.
For example, about 200 ° C., the surface of the second intermediate dielectric plate 4B is, for example, about 270 ° C. by the heater 42, and the surface of the dielectric plate 5 is, for example, 340, by the heater 52.
It is adjusted to about ° C.
【0027】ここで冷却部31と第1の中間誘電体プレ
−ト4Aとの間にはOリング33が設けられており、既
述のようにHeガスにより均一に熱が伝導されている
が、第1の中間誘電体プレ−ト4Aと第2の中間誘電体
プレ−ト4Bとの間、第2の中間誘電体プレ−ト4Bと
誘電体プレ−ト5との間では、誘電体プレ−トが200
℃以上の温度となるのでOリング33は用いることがで
きず、誘電体プレ−ト同士の面接触により熱が伝導され
ている。Here, an O-ring 33 is provided between the cooling section 31 and the first intermediate dielectric plate 4A, and the heat is uniformly conducted by the He gas as described above. A dielectric between the first intermediate dielectric plate 4A and the second intermediate dielectric plate 4B, and between the second intermediate dielectric plate 4B and the dielectric plate 5; Plate is 200
Since the temperature is higher than ° C., the O-ring 33 cannot be used, and heat is conducted by the surface contact between the dielectric plates.
【0028】この際各誘電体プレ−トはネジ止めにより
接合されているが、誘電体プレ−トの表面は完全な平坦
面ではないので、例えば図5(a)に第1及び第2の中
間誘電体プレ−ト4A、4Bを代表して示すように、両
者の間にはわずかな隙間が形成されており、周縁領域を
ネジ止めしているため、中央領域の接合力は周縁領域に
比べて弱くなり、中央領域ではこの隙間が大きくなって
しまう。At this time, each dielectric plate is joined by screwing, but since the surface of the dielectric plate is not a completely flat surface, for example, the first and second dielectric plates are shown in FIG. As shown representatively of the intermediate dielectric plates 4A and 4B, a slight gap is formed between the two, and the peripheral region is screwed, so that the bonding force in the central region is in the peripheral region. The gap becomes large in the central region.
【0029】ところが本実施の形態では、第1及び第2
の中間誘電体プレ−ト4A、4Bの間と、第2の誘電体
プレ−ト4Bと誘電体プレ−ト5との間を静電吸着力に
より接合させているので、例えば図5(b)に示すよう
に、中間誘電体プレ−ト4A、4Bが静電力により互い
に引き付けられ、当該プレ−ト4A、4B間に存在する
隙間が小さくなる。However, in the present embodiment, the first and second
Since the intermediate dielectric plates 4A and 4B and the second dielectric plate 4B and the dielectric plate 5 are joined by electrostatic attraction, for example, FIG. As shown in ()), the intermediate dielectric plates 4A and 4B are attracted to each other by electrostatic force, and the gap existing between the plates 4A and 4B is reduced.
【0030】ここで誘電体プレ−ト4A、4B、5の接
合部分における隙間は真空雰囲気であるため、この部分
では熱はほとんど伝導されず、従って接触している部位
と接触していない部位との間で熱伝導の面内均一性が悪
くなる。このため隙間が小さいと熱伝導の面内均一性が
高くなり、この結果誘電体プレ−ト5の表面の温度の均
一化が図られ、面内均一性の高い真空処理を行うことが
できる。Here, since the gap in the joint portion between the dielectric plates 4A, 4B, and 5 is a vacuum atmosphere, heat is hardly conducted in this portion, and therefore, the portion that is in contact with the portion that is not in contact is Between them, the in-plane uniformity of heat conduction is deteriorated. For this reason, if the gap is small, the in-plane uniformity of the heat conduction becomes high. As a result, the temperature of the surface of the dielectric plate 5 is made uniform, and a vacuum process with high in-plane uniformity can be performed.
【0031】また各誘電体プレ−ト4A、4B、5をネ
ジ止めにより接合した場合には、周縁領域ではネジ止め
により大きな接合力が得られ、ネジ33よりも内側であ
って電極41、51が設けられている中央領域では静電
吸着力による大きな接合力が得られるので、面内全体に
亘って大きな接合力が得られる。これにより各誘電体プ
レ−ト4A、4B、5の接合部分の隙間が面内に亘って
小さいものとなり、熱伝導の面内均一性が高くなる。こ
のようにネジ止めによる接合はより有効であると考えら
れるが、本実施の形態においてはネジ止めによる接合は
必ずしも必要な構成ではない。When each of the dielectric plates 4A, 4B, and 5 is joined by screwing, a large joining force is obtained by screwing in the peripheral area, and the electrodes 41 and 51 are located inside the screw 33 and inside. In the central region where is provided, a large bonding force due to the electrostatic attraction force can be obtained, and thus a large bonding force can be obtained over the entire surface. As a result, the gap between the joining portions of the dielectric plates 4A, 4B, and 5 becomes small over the plane, and the in-plane uniformity of heat conduction is increased. Thus, joining by screwing is considered to be more effective, but joining by screwing is not always necessary in the present embodiment.
【0032】さらに第1及び第2の中間誘電体プレ−ト
4A、4Bと誘電体プレ−ト5に夫々ヒ−タ42、52
を設け、各誘電体プレ−ト4A、4B、5を独立して温
度コントロ−ルを行っているため、各プレ−ト間の熱伝
導が均一になりやすい。何故ならプレ−トの接合面には
隙間の存在する部位と接触している部位とがあって熱の
伝わり方を完全に均一にすることはできないが、プレ−
ト自体に内蔵されているヒ−タによりある程度各プレ−
トの表面(裏面)の温度の均一化が図られているため、
プレ−ト間の温度勾配つまり接合部分の対向している面
同士の温度勾配を制御できる。このため前記温度勾配を
小さくすることにより熱の伝わり方の差を小さく抑える
ことができるので、この結果熱伝導の面内均一性を高
め、面内均一性の高い真空処理を行うことができる。Further, heaters 42 and 52 are provided on the first and second intermediate dielectric plates 4A and 4B and the dielectric plate 5, respectively.
The temperature control is performed independently for each of the dielectric plates 4A, 4B, and 5, so that the heat conduction between the plates tends to be uniform. This is because the joint surface of the plate has a part where a gap exists and a part that is in contact with it, making it impossible to make heat transfer completely uniform.
To some extent due to the heater built into the plate itself
Because the temperature of the front surface (back surface) is made uniform,
It is possible to control the temperature gradient between the plates, that is, the temperature gradient between the opposing surfaces of the joint. For this reason, the difference in the manner of heat transmission can be reduced by reducing the temperature gradient. As a result, the in-plane uniformity of heat conduction can be increased, and vacuum processing with high in-plane uniformity can be performed.
【0033】さらにまた誘電体プレ−ト5のみにヒ−タ
52を設けると、誘電体プレ−ト5の表面を所定の温度
まで上昇させようとしても、当該誘電体プレ−ト5と中
間誘電体プレ−ト4A、4Bとの温度勾配が大きいの
で、誘電体プレ−ト4B等へ伝導していく熱量が多く、
なかなか誘電体プレ−ト5の表面の温度が上昇しない
が、中間誘電体プレ−ト4A、4Bにもヒ−タ42を設
けて所定の温度まで加熱するようにすれば、初期段階に
おいても誘電体プレ−ト5と第2の中間誘電体プレ−ト
4Bとの温度勾配が小さくなるので、その分当該プレ−
ト4Bへ伝導していく熱量が減り、この結果誘電体プレ
−ト5が所定の温度に安定するまでの時間が短縮され
る。従って上述実施の形態のように中間誘電体プレ−ト
4A、4Bにもヒ−タ42を設けることは有効である。Further, when the heater 52 is provided only on the dielectric plate 5, even if the surface of the dielectric plate 5 is to be raised to a predetermined temperature, the dielectric plate 5 and the intermediate dielectric plate 5 are heated. Since the temperature gradient with the body plates 4A and 4B is large, a large amount of heat is conducted to the dielectric plate 4B and the like.
Although the temperature of the surface of the dielectric plate 5 does not easily rise, if the intermediate dielectric plates 4A and 4B are also provided with the heater 42 and heated to a predetermined temperature, the dielectric can be maintained even in the initial stage. Since the temperature gradient between the body plate 5 and the second intermediate dielectric plate 4B becomes small, the plate is accordingly reduced.
The amount of heat conducted to the plate 4B is reduced, and as a result, the time required for the dielectric plate 5 to stabilize at a predetermined temperature is reduced. Therefore, it is effective to provide the heater 42 also on the intermediate dielectric plates 4A and 4B as in the above embodiment.
【0034】このように本実施の形態の載置台3では、
Oリング33とウエハWとの間に第1及び第2の中間誘
電体プレ−ト4A、4Bと誘電体プレ−ト5を介在さ
せ、各誘電体プレ−トの温度をウエハWに近付くに連れ
て高くなるように制御することにより、Oリング33と
ウエハWとの間の温度差を大きくとることができる。こ
の際載置台3では誘電体プレ−ト5から冷却部31に向
けて温度が低くなるように温度勾配があるので、各誘電
体プレ−トでは表面側よりも裏面側の方が温度が低くな
っている。As described above, in the mounting table 3 of the present embodiment,
The first and second intermediate dielectric plates 4A and 4B and the dielectric plate 5 are interposed between the O-ring 33 and the wafer W so that the temperature of each dielectric plate approaches the wafer W. By controlling so as to increase the temperature, the temperature difference between the O-ring 33 and the wafer W can be increased. At this time, since the mounting table 3 has a temperature gradient such that the temperature decreases from the dielectric plate 5 toward the cooling section 31, the temperature of the back surface of the dielectric plate is lower than that of the front surface. Has become.
【0035】従ってウエハWの載置面を340℃と30
0℃以上の温度としながらもOリング33と接触する中
間誘電体プレ−ト4Aの温度は200℃以下とすること
ができる。これによりOリング33は200℃以下の面
と150℃の面(冷却部31の表面)との間に介在する
ことになるので、Oリング33自身は200℃よりもか
なり低い温度になり、Oリング33の変質を防止するこ
とができ、この結果気密性を保持できる。Therefore, the mounting surface of the wafer W is set at 340 ° C. and 30 ° C.
The temperature of the intermediate dielectric plate 4A that is in contact with the O-ring 33 at a temperature of 0 ° C. or more can be 200 ° C. or less. As a result, the O-ring 33 is interposed between the surface at 200 ° C. or lower and the surface at 150 ° C. (the surface of the cooling unit 31), so that the O-ring 33 itself has a considerably lower temperature than 200 ° C. The deterioration of the ring 33 can be prevented, and as a result, airtightness can be maintained.
【0036】なお上述の第1及び第2の中間誘電体プレ
−ト4A、4B間の接合を、従来の装置において誘電体
プレ−ト5と冷却部31との間に適用する構成(第1及
び第2の中間誘電体プレ−ト4A、4Bを用いない構
成)とすると、冷却部31の表面のいわば装置の温度の
基準となる150℃程度の基準冷却面に、直接300℃
以上の温度の誘電体プレ−ト5が接合されることにな
る。従って誘電体プレ−ト5から基準冷却面に直接大き
な熱量が伝わってしまうので、当該基準冷却面の温度均
一性が崩れ、温度調整が行いにくいという不都合が生じ
る。The structure in which the bonding between the first and second intermediate dielectric plates 4A and 4B is applied between the dielectric plate 5 and the cooling section 31 in a conventional apparatus (first embodiment). And the second intermediate dielectric plates 4A, 4B are not used), the surface of the cooling unit 31 is directly cooled to 300 ° C. on a reference cooling surface of about 150 ° C., which is a reference for the temperature of the device.
The dielectric plate 5 having the above temperature is joined. Therefore, since a large amount of heat is transmitted directly from the dielectric plate 5 to the reference cooling surface, the uniformity of the temperature of the reference cooling surface is lost, and there is a disadvantage that it is difficult to adjust the temperature.
【0037】また本発明の真空処理装置では、中間誘電
体プレ−ト同士の接合面のいずれか一方あるいは、中間
誘電体プレ−トと誘電体プレ−トの接合面のいずれか一
方に、例えば図6に示すような凹凸加工を施すようにし
てもよい。このような構成では、凹部は真空雰囲気の隙
間となるので、この部分での熱伝導はほとんど起こらな
いため、熱伝導の程度を制御することができる。例えば
各誘電体プレ−トをネジ止めにより接合した場合には、
ネジ止めした領域の方が接合力が強くて熱伝導率が大き
くなるが、この場合例えばネジ止めした領域以外の領域
では凸部の面積を大きくすることにより、面内における
熱伝導率を均一にすることができる。Further, in the vacuum processing apparatus of the present invention, for example, one of the joining surfaces of the intermediate dielectric plates or one of the joining surfaces of the intermediate dielectric plate and the dielectric plate is provided on the one of the joining surfaces of the intermediate dielectric plate and the dielectric plate. The unevenness processing as shown in FIG. 6 may be performed. In such a configuration, since the concave portion becomes a gap in a vacuum atmosphere, heat conduction hardly occurs in this portion, so that the degree of heat conduction can be controlled. For example, when each dielectric plate is joined by screwing,
The screwed area has higher bonding force and higher thermal conductivity, but in this case, for example, in the area other than the screwed area, the area of the convex portion is increased, so that the in-plane thermal conductivity is made uniform. can do.
【0038】続いて本発明の第2の実施の形態について
図7により説明する。本実施の形態が上述の実施の形態
と異なる点は、載置台6において、冷却部31とウエハ
W載置用の誘電体プレ−ト5との間に中間誘電体プレ−
ト60を設け、この中間誘電体プレ−ト60と誘電体プ
レ−ト5との間の隙間に熱伝導ガス例えばHeガスを充
填し、このHeガスの圧力を調整することにより両者の
間の熱伝導度を調整して誘電体プレ−ト5の温度を制御
し、結果としてウエハWの温度を制御するようにしたこ
とである。本実施の形態の載置台6を具体的に説明する
と、冷却部31と誘電体プレ−ト5との間に設けられた
中間誘電体プレ−ト60の誘電体プレ−ト5と接合する
面のほぼ全面には例えば四角柱形状の凹部61aが多数
形成されており、こうして当該接合面に凹凸が形成さ
れ、これにより中間誘電体プレ−ト60と誘電体プレ−
ト5との間には隙間が形成されることとなる。ここで中
間誘電体プレ−ト60と誘電体プレ−ト5とは凸部61
bの上面を介して接合されるが、この接合部分の面積は
誘電体プレ−ト5と冷却部31の温度差に応じて決定さ
れ、例えば誘電体プレ−ト5の接合面の面積の20%〜
50%程度に設定される。また中間誘電体プレ−ト60
の内部には通気室62が形成されており、この通気室6
2と前記凹部61aのいくつかとは通気管63により連
通されている。Next, a second embodiment of the present invention will be described with reference to FIG. This embodiment is different from the above-described embodiment in that an intermediate dielectric plate is provided between the cooling unit 31 and the dielectric plate 5 for mounting the wafer W on the mounting table 6.
A gap between the intermediate dielectric plate 60 and the dielectric plate 5 is filled with a heat conducting gas, for example, He gas, and the pressure between the two is adjusted by adjusting the pressure of the He gas. The temperature of the dielectric plate 5 is controlled by adjusting the thermal conductivity, and as a result, the temperature of the wafer W is controlled. More specifically, the mounting table 6 of the present embodiment will be described. A surface of the intermediate dielectric plate 60 provided between the cooling unit 31 and the dielectric plate 5 to be joined to the dielectric plate 5. For example, a large number of quadrangular prism-shaped concave portions 61a are formed on almost the entire surface of the substrate. Thus, irregularities are formed on the joining surface, whereby the intermediate dielectric plate 60 and the dielectric plate are formed.
Thus, a gap is formed between the first and second members. Here, the intermediate dielectric plate 60 and the dielectric plate 5 are formed by a convex portion 61.
b, the area of this junction is determined according to the temperature difference between the dielectric plate 5 and the cooling section 31. For example, the area of the junction surface of the dielectric plate 5 is 20%. % ~
It is set to about 50%. Also, an intermediate dielectric plate 60
Is formed with a ventilation chamber 62 inside the ventilation chamber 6.
2 and some of the concave portions 61 a are communicated with each other by a ventilation pipe 63.
【0039】さらに例えば通気室62の底部には例えば
載置台6の中央部から下側に向けて伸びるガス供給管6
4が接続されており、このガス供給管64の他端側は載
置台6の外部において、バルブV1,圧力調整バルブV
2を介してHeガス供給源65に接続されている。この
際圧力調整バルブV2は、例えば圧力調整バルブV2と
Heガス供給源65との間のガス供給管64内の圧力を
圧力計66により検出し、この検出値に基づいて圧力コ
ントロ−ラ67により開度が調整されるように構成され
ている。本実施の形態では、Heガス供給源65やガス
供給管64、通気室62や通気管63により誘電体プレ
−ト5と中間誘電体プレ−ト60との隙間にHeガスを
供給する手段が構成されている。Further, for example, a gas supply pipe 6 extending downward from the center of the mounting table 6 is provided at the bottom of the ventilation chamber 62, for example.
The other end of the gas supply pipe 64 is connected to a valve V1 and a pressure adjusting valve V outside the mounting table 6.
2 is connected to a He gas supply source 65. At this time, the pressure adjusting valve V2 detects, for example, the pressure in the gas supply pipe 64 between the pressure adjusting valve V2 and the He gas supply source 65 by the pressure gauge 66, and based on the detected value, the pressure controller 67 The opening is configured to be adjusted. In the present embodiment, a means for supplying He gas to the gap between the dielectric plate 5 and the intermediate dielectric plate 60 by the He gas supply source 65, the gas supply pipe 64, the ventilation chamber 62 and the ventilation pipe 63 is provided. It is configured.
【0040】このような中間誘電体プレ−ト60は、第
1の実施の形態の中間誘電体プレ−ト4A,4Bと同様
に表面側に近い位置に静電チャック用の電極68が埋設
されて表面部が静電チャックとして構成されており、こ
うして中間誘電体プレ−ト60と誘電体プレ−ト5とは
静電チャックにより接合されている。In such an intermediate dielectric plate 60, an electrode 68 for an electrostatic chuck is buried at a position close to the front surface side similarly to the intermediate dielectric plates 4A and 4B of the first embodiment. Thus, the surface portion is configured as an electrostatic chuck, and thus the intermediate dielectric plate 60 and the dielectric plate 5 are joined by the electrostatic chuck.
【0041】また誘電体プレ−ト5のウエハWが載置さ
れる表面は鏡面加工されており、冷却部31と中間誘電
体プレ−ト60と誘電体プレ−ト5とは、上述の実施の
形態の載置台3と同様にネジ36により周縁領域を着脱
自在に接合されている。この他の構成は上述の第1の実
施の形態と同様である。The surface of the dielectric plate 5 on which the wafer W is mounted is mirror-finished, and the cooling unit 31, the intermediate dielectric plate 60, and the dielectric plate 5 are formed as described above. In the same manner as the mounting table 3 of the embodiment, the peripheral region is detachably joined by screws 36. Other configurations are the same as those of the above-described first embodiment.
【0042】このような載置台6では、バルブV1を開
いてHeガス供給源65よりガス供給管64を介してH
eガスを供給すると、Heガスは通気室62から通気管
63を介して凹部61a内に供給され、さらに中間誘電
体プレ−ト60と誘電体プレ−ト5の接合面は完全な平
坦面ではなく、両者の間にはわずかな隙間が形成されて
いるので、この隙間を介して中間誘電体プレ−ト60と
誘電体プレ−ト5との間の全ての隙間に拡散していく。In such a mounting table 6, the valve V 1 is opened and H gas is supplied from the He gas supply source 65 through the gas supply pipe 64.
When e gas is supplied, He gas is supplied from the ventilation chamber 62 into the recess 61a via the ventilation pipe 63, and the joining surface between the intermediate dielectric plate 60 and the dielectric plate 5 is completely flat. However, since a slight gap is formed between the two, the metal is diffused into all the gaps between the intermediate dielectric plate 60 and the dielectric plate 5 through this gap.
【0043】このように前記隙間内にHeガスを供給す
ると、中間誘電体プレ−ト60と誘電体プレ−ト5との
間はHeガスにより熱伝導され、両者の間の熱伝導度は
Heガスの圧力に応じて変化する。つまりこれらの間の
熱伝導度はHeガスの量に依存し、例えば隙間内のHe
ガスの圧力が高い場合には、熱伝導の媒体となるHeガ
スの量が多いので熱伝導度が大きくなり、誘電体プレ−
ト5と中間誘電体プレ−ト60との温度差△T(図8参
照)が小さくなる。反対に例えば隙間内のHeガスの圧
力が低い場合には、熱伝導の媒体となるHeガスの量が
少なく、真空に近い状態となるで熱伝導度が小さくな
り、前記△Tは大きくなる。When He gas is supplied into the gap as described above, heat is conducted between the intermediate dielectric plate 60 and the dielectric plate 5 by the He gas, and the thermal conductivity between the two is He. It changes according to the gas pressure. That is, the thermal conductivity between them depends on the amount of He gas, for example, He in the gap.
When the pressure of the gas is high, the amount of He gas serving as a medium for heat conduction is large, so that the heat conductivity increases, and the dielectric pre-press becomes large.
The temperature difference ΔT between the plate 5 and the intermediate dielectric plate 60 (see FIG. 8) is reduced. On the other hand, for example, when the pressure of the He gas in the gap is low, the amount of the He gas serving as a heat transfer medium is small, and the heat conductivity is reduced in a state close to a vacuum, and the ΔT is increased.
【0044】このように前記隙間内のHeガスの圧力と
前記△Tとの間には図9に示すような比例関係がある
が、このHeガスの圧力は、ガス供給管64内の圧力を
圧力計66にて検出し、この検出値64に基づいて圧力
調整バルブV2の開度を圧力コントロ−ラ67により調
整することにより制御することができる。As described above, there is a proportional relationship between the pressure of the He gas in the gap and the ΔT as shown in FIG. 9, and the pressure of the He gas decreases the pressure in the gas supply pipe 64. It can be controlled by detecting with the pressure gauge 66 and adjusting the opening degree of the pressure adjusting valve V2 by the pressure controller 67 based on the detected value 64.
【0045】ところでウエハWの温度はプラズマからの
熱の供給量と、誘電体プレ−ト5から冷却部31へ向け
て流れる熱の放熱量とのバランスで決まってくるので、
前記熱伝導度を調整することによりウエハWの温度を制
御することができる。従って前記隙間内のHeガスの圧
力を調整することにより△Tが調整され、これにより誘
電体プレ−ト5から冷却部31へ向けて伝導する熱量が
制御されるので、誘電体プレ−ト5のヒ−タ52やプラ
ズマによる加熱と冷却部31による冷却との組み合わせ
により誘電体プレ−ト5の表面の温度が調整され、ウエ
ハWの温度が制御される。The temperature of the wafer W is determined by the balance between the amount of heat supplied from the plasma and the amount of heat radiated from the dielectric plate 5 to the cooling unit 31.
The temperature of the wafer W can be controlled by adjusting the thermal conductivity. Therefore, ΔT is adjusted by adjusting the pressure of the He gas in the gap, and the amount of heat conducted from the dielectric plate 5 to the cooling unit 31 is controlled. The temperature of the surface of the dielectric plate 5 is adjusted by the combination of the heating by the heater 52 or the plasma and the cooling by the cooling unit 31 to control the temperature of the wafer W.
【0046】実際のプロセスでは予め前記隙間内のHe
ガスの圧力と前記△Tとの関係を求めておき、この関係
に基づいて誘電体プレ−ト5の表面を所定の温度に設定
するための圧力が決定されるので、ウエハWを載置する
前に前記隙間内のHeガスの圧力を決定された圧力範囲
内に維持してウエハWの温度を制御することができる。In the actual process, the He in the gap is previously determined.
The relationship between the gas pressure and the above-mentioned ΔT is determined in advance, and the pressure for setting the surface of the dielectric plate 5 to a predetermined temperature is determined based on this relationship. The temperature of the wafer W can be controlled while maintaining the pressure of the He gas in the gap in the pressure range determined previously.
【0047】ここで誘電体プレ−ト5と中間誘電体プレ
−ト60との間の隙間にHeガスを充填しない場合に
は、当該隙間は真空領域となり熱伝導が起こらないので
当該隙間を熱抵抗とすることができず、誘電体プレ−ト
5の温度制御が困難になる。Here, when the gap between the dielectric plate 5 and the intermediate dielectric plate 60 is not filled with He gas, the gap becomes a vacuum region and heat conduction does not occur. Since it cannot be a resistor, it becomes difficult to control the temperature of the dielectric plate 5.
【0048】本実施の形態では中間誘電体プレ−ト60
の表面に凹凸を設け、ここにHeガスを供給する構成と
したが、凹凸は誘電体プレ−ト5側に形成するようにし
てもよいし、誘電体プレ−ト5と中間誘電体プレ−ト6
0との両方に形成するようにしてもよい。また両プレ−
ト5,60の接合面に凹凸を形成せず、両者の接合面の
平面度に応じて存在するわずかな隙間にHeガスを供給
するようにしてもよい。In the present embodiment, the intermediate dielectric plate 60
The surface is provided with irregularities, and He gas is supplied thereto. However, the irregularities may be formed on the dielectric plate 5 side, or the dielectric plate 5 and the intermediate dielectric plate may be formed. To 6
0 may be formed. In addition, both play
The He gas may be supplied to a slight gap existing in accordance with the flatness of the joint surfaces of the joints 5 and 60 without forming irregularities on the joint surfaces of the joints 5 and 60.
【0049】さらに中間誘電体プレ−ト60に第1の実
施の形態の中間誘電体プレ−ト4A,4Bと同様にヒ−
タを設ける構成としてもよく、この場合には温度制御を
さらに容易に行うことができる。また中間誘電体プレ−
ト60と誘電体プレ−ト5との間のみならず、ウエハW
と誘電体プレ−ト5との間の隙間にHeガスを供給し、
その圧力により熱伝導度を変えてウエハWの温度を制御
するようにしてもよい。さらにまた冷却部31と中間誘
電体プレ−ト60と誘電体プレ−ト5とをネジにより接
合する構成としたが、中間誘電体プレ−ト60と誘電体
プレ−ト5とを静電チャックのみで接合させるようにし
てもよい。Further, as in the case of the intermediate dielectric plates 4A and 4B of the first embodiment, heat is applied to the intermediate dielectric plate 60.
In this case, temperature control can be performed more easily. Also, an intermediate dielectric press
Not only between the plate 60 and the dielectric plate 5 but also the wafer W
He gas is supplied to the gap between the dielectric plate 5 and the
The temperature of the wafer W may be controlled by changing the thermal conductivity according to the pressure. Furthermore, the cooling unit 31, the intermediate dielectric plate 60, and the dielectric plate 5 are joined by screws, but the intermediate dielectric plate 60 and the dielectric plate 5 are electrostatically chucked. You may make it join only by.
【0050】続いて本発明の第3の実施の形態の載置台
7について図10により説明する。この例の載置台7
は、冷却部31の上に載置される中間誘電体プレ−ト7
0の冷却部31側の表面に近い位置に例えばタングステ
ン箔よりなる静電チャック用の第1の電極71を埋設
し、冷却部31と中間誘電体プレ−ト70との間を静電
チャックによる静電吸着力により接合するように構成さ
れている。この場合中間誘電体プレ−ト70には、上述
の第1の実施の形態の中間誘電体プレ−ト4と同様に、
誘電体プレ−ト5との間を静電吸着するための静電チャ
ック用の第2の電極72が表面側に埋設されると共に、
加熱手段であるヒ−タ73が設けられている。また第1
及び第2の電極71,72は夫々静電チャック用の直流
電源74,75、ヒ−タ73は電源部76にに夫々接続
されている。冷却部31や誘電体プレ−ト5の構成は上
述の実施の形態と同様である。Next, a mounting table 7 according to a third embodiment of the present invention will be described with reference to FIG. Mounting table 7 in this example
Is an intermediate dielectric plate 7 mounted on the cooling unit 31.
A first electrode 71 for electrostatic chuck made of, for example, tungsten foil is buried at a position close to the surface of the cooling unit 31 on the side of the cooling unit 31, and the space between the cooling unit 31 and the intermediate dielectric plate 70 is formed by the electrostatic chuck. It is configured to join by electrostatic attraction. In this case, the intermediate dielectric plate 70 has the same structure as the intermediate dielectric plate 4 of the first embodiment described above.
A second electrode 72 for electrostatic chuck for electrostatically attracting the dielectric plate 5 is buried on the surface side, and
A heater 73 as heating means is provided. Also the first
The second electrodes 71 and 72 are connected to DC power supplies 74 and 75 for electrostatic chuck, respectively, and the heater 73 is connected to a power supply unit 76, respectively. The configurations of the cooling unit 31 and the dielectric plate 5 are the same as those of the above-described embodiment.
【0051】このような載置台7では、冷却部31と中
間誘電体プレ−ト70との間が静電吸着力により接合さ
れているので、両者の界面の隙間が小さくなる。このた
め既述のようにこの間の熱伝導の面内均一性が高くなる
ので、冷却部31の表面の温度(基準温度)が均一性の
高い状態で伝導され、ウエハWの温度調整が容易にな
る。In such a mounting table 7, since the cooling section 31 and the intermediate dielectric plate 70 are joined by the electrostatic attraction force, the gap at the interface between them is reduced. For this reason, as described above, the in-plane uniformity of the heat conduction during this period increases, so that the temperature (reference temperature) of the surface of the cooling unit 31 is conducted in a highly uniform state, and the temperature of the wafer W can be easily adjusted. Become.
【0052】ここで本実施の形態は第2の実施の形態の
載置台6に適用してもよい。またこの例では、冷却部3
1と中間誘電体プレ−ト70との間を静電吸着力とネジ
との組み合わせで接合する構成としたが、静電チャック
のみで接合させるようにしてもよい。Here, the present embodiment may be applied to the mounting table 6 of the second embodiment. In this example, the cooling unit 3
1 and the intermediate dielectric plate 70 are joined by a combination of an electrostatic attraction force and a screw, but may be joined only by an electrostatic chuck.
【0053】以上において本発明は、図11や図12に
示す載置台8,9に適用するようにしてもよい。図11
に示す載置台は、中間誘電体プレ−ト80の底面のほぼ
中央部を円筒体の支持部材81により支持し、この支持
部材81の外周囲を囲むようにリング状の冷却部82を
設けるように構成した例であり、中間誘電体プレ−ト8
0の上面にはウエハW載置用の誘電体プレ−ト5が設け
られている。In the above, the present invention may be applied to the mounting tables 8 and 9 shown in FIG. 11 and FIG. FIG.
In the mounting table shown in FIG. 7, a substantially central portion of the bottom surface of the intermediate dielectric plate 80 is supported by a cylindrical support member 81, and a ring-shaped cooling section 82 is provided so as to surround the outer periphery of the support member 81. And an intermediate dielectric plate 8
A dielectric plate 5 for mounting the wafer W is provided on the upper surface of the reference numeral 0.
【0054】冷却部82は上述の実施の形態の冷却部3
1と同様に例えばアルミニウムよりなり、接地されてい
ると共に、内部に冷媒を通流させるための冷媒流路82
aが形成されていて、冷却部82の表面は均一な基準温
度面になるように構成されている。この冷却部82の上
面には樹脂製のOリング83を介して前記中間誘電体プ
レ−ト80が設けられており、冷却部82と中間誘電体
プレ−ト80との接合面には、熱伝導ガスであるHeガ
スが供給され、第2の実施の形態の中間誘電体プレ−ト
70と誘電体プレ−ト5との間と同様に、Heガスの圧
力制御がなされるように構成されている。The cooling unit 82 is the cooling unit 3 of the above-described embodiment.
1 is made of, for example, aluminum, is grounded, and has a refrigerant flow path 82 for allowing a refrigerant to flow therethrough.
a is formed, and the surface of the cooling unit 82 is configured to have a uniform reference temperature surface. The intermediate dielectric plate 80 is provided on the upper surface of the cooling unit 82 via an O-ring 83 made of resin, and the joint surface between the cooling unit 82 and the intermediate dielectric plate 80 has a thermal interface. He gas, which is a conductive gas, is supplied, and the pressure of He gas is controlled similarly to that between the intermediate dielectric plate 70 and the dielectric plate 5 of the second embodiment. ing.
【0055】前記冷却部82の下面の一部は樹脂製のO
リング84を介して真空容器2の底壁に接合されてい
る。また真空容器2の底壁の一部には前記支持部材81
の底部に合わせて凹部85が形成されており、当該凹部
85と支持部材81の底面との間は樹脂製のOリング8
6を介して接合されている。A part of the lower surface of the cooling section 82 is made of resin O
It is joined to the bottom wall of the vacuum vessel 2 via a ring 84. The support member 81 is provided on a part of the bottom wall of the vacuum vessel 2.
A concave portion 85 is formed in accordance with the bottom of the support member 81, and a resin O-ring 8 is formed between the concave portion 85 and the bottom surface of the support member 81.
6 are joined.
【0056】前記中間誘電体プレ−ト80には第3の実
施の形態の中間誘電体プレ−ト70と同様に、冷却部8
2との間を静電吸着するための第1の電極80aと、誘
電体プレ−ト5との間を静電吸着するための第2の電極
80bと、ヒ−タ80cとが埋設されている。誘電体プ
レ−ト5の構成は上述の実施の形態と同様である。As in the case of the intermediate dielectric plate 70 of the third embodiment, the cooling section 8 is provided in the intermediate dielectric plate 80.
A first electrode 80a for electrostatic attraction between the first and second dielectric plates 5, a second electrode 80b for electrostatic attraction between the dielectric plate 5 and a heater 80c. I have. The structure of the dielectric plate 5 is similar to that of the above-described embodiment.
【0057】このような載置台8では、冷却部82と中
間誘電体プレ−ト80との間ではHeガスにより熱伝導
され、中間誘電体プレ−ト80と誘電体プレ−ト5との
間では誘電体プレ−ト同士の面接触により熱伝導され
る。そしてプラズマからの熱の供給量と、誘電体プレ−
ト5から冷却部82への熱の放熱量とのバランスでウエ
ハWの温度が調整される。In such a mounting table 8, heat is conducted by the He gas between the cooling part 82 and the intermediate dielectric plate 80, and the heat is conducted between the intermediate dielectric plate 80 and the dielectric plate 5. In this case, heat is conducted by surface contact between the dielectric plates. The amount of heat supplied from the plasma and the dielectric press
The temperature of the wafer W is adjusted in balance with the amount of heat released from the heat sink 5 to the cooling unit 82.
【0058】この際冷却部82と中間誘電体プレ−ト8
0との間は静電チャックの静電吸着により接合されてい
るので、両者の界面の隙間が小さくなり、面内均一性の
高い熱伝導が行われる上、両者の間の熱伝導度は既述の
ようにHeガスの圧力により制御される。このためOリ
ング83とウエハW載置面とを熱的に分離し、Oリング
83の熱による変質を抑えながら、ウエハWの温度を所
定の処理温度にするための温度制御をより容易に行うこ
とができる。At this time, the cooling section 82 and the intermediate dielectric plate 8
Since it is joined by the electrostatic chuck of the electrostatic chuck between 0 and 0, the gap between the two interfaces is reduced, and heat conduction with high in-plane uniformity is performed. As described above, the pressure is controlled by the He gas pressure. Therefore, the O-ring 83 is thermally separated from the mounting surface of the wafer W, and the temperature of the wafer W can be more easily controlled to a predetermined processing temperature while suppressing deterioration of the O-ring 83 due to heat. be able to.
【0059】また図12に示す載置台9は、誘電体プレ
−ト5と中間誘電体プレ−ト90との間に導電性材料例
えばアルミニウムによりなる導電性プレ−ト91を介在
させた例であり、導電性プレ−ト91の底面のほぼ中央
部を円筒体の支持部材92により支持し、この支持部材
92の外周囲を囲むようにリング状の中間誘電体プレ−
ト90と冷却部93とを設けるように構成されている。The mounting table 9 shown in FIG. 12 is an example in which a conductive plate 91 made of a conductive material such as aluminum is interposed between the dielectric plate 5 and the intermediate dielectric plate 90. A substantially central portion of the bottom surface of the conductive plate 91 is supported by a cylindrical support member 92, and a ring-shaped intermediate dielectric plate is formed so as to surround the outer periphery of the support member 92.
And a cooling unit 93 are provided.
【0060】冷却部93は例えばアルミニウムよりな
り、内部に冷媒を通流させるための冷媒流路93aが形
成されていて、冷却部93の表面は均一な基準温度面に
なるように構成されていると共に、冷却部93の上面に
は樹脂製のOリング94を介して前記リング状の中間誘
電体プレ−ト90が設けられている。The cooling section 93 is made of, for example, aluminum, and has a coolant passage 93a for allowing a coolant to flow therein. The surface of the cooling section 93 is configured to have a uniform reference temperature surface. At the same time, the ring-shaped intermediate dielectric plate 90 is provided on the upper surface of the cooling section 93 via an O-ring 94 made of resin.
【0061】この中間誘電体プレ−ト90は冷却部93
との間を静電吸着するための電極90aとヒ−タ90b
とを備えており、中間誘電体プレ−ト90と導電性プレ
−ト91との接合面には、熱伝導ガスであるHeガスが
供給され、第2の実施の形態の中間誘電体プレ−ト70
と誘電体プレ−ト5との間と同様に、Heガスの圧力制
御がなされるように構成されている。誘電体プレ−ト5
の構成は上述の実施の形態と同様である。The intermediate dielectric plate 90 includes a cooling section 93
90a and heater 90b for electrostatically attracting between
He gas, which is a heat conductive gas, is supplied to the joint surface between the intermediate dielectric plate 90 and the conductive plate 91, and the intermediate dielectric plate 90 according to the second embodiment is provided. To 70
The pressure of He gas is controlled in the same manner as between the dielectric plate 5 and the dielectric plate 5. Dielectric plate 5
Is similar to that of the above-described embodiment.
【0062】このような載置台9では、冷却部93と中
間誘電体プレ−ト90との間では面接触により、中間誘
電体プレ−ト90と導電性プレ−ト91との間ではHe
ガスにより、導電性プレ−ト91と誘電体プレ−ト5と
の間は面接触により夫々熱伝導されて、プラズマからの
熱の供給量と誘電体プレ−ト5から冷却部93への熱の
放熱量とのバランスでウエハWの温度が調整される。In the mounting table 9, the cooling section 93 and the intermediate dielectric plate 90 are in surface contact, and the intermediate dielectric plate 90 and the conductive plate 91 are in He contact.
The gas causes heat conduction between the conductive plate 91 and the dielectric plate 5 by surface contact, respectively, so that the amount of heat supplied from the plasma and the heat from the dielectric plate 5 to the cooling unit 93 are increased. The temperature of the wafer W is adjusted in balance with the amount of heat radiation.
【0063】この載置台9においては、冷却部93と中
間誘電体プレ−ト90との間や導電性プレ−ト91と誘
電体プレ−ト5との間は静電チャックの静電吸着により
接合されているので両者の界面の隙間が小さくなり、面
内均一性の高い熱伝導が行われると共に、中間誘電体プ
レ−ト90と導電性プレ−ト91との間の熱伝導度はH
eガスの圧力により制御される。このためOリング94
とウエハW載置面とを熱的に分離し、Oリング94の熱
による変質を抑えながら、ウエハWの温度を所定の処理
温度にするための温度制御をより容易に行うことができ
る。In the mounting table 9, the space between the cooling section 93 and the intermediate dielectric plate 90 and the space between the conductive plate 91 and the dielectric plate 5 are formed by electrostatic chuck of an electrostatic chuck. Since they are joined, the gap at the interface between them becomes small, heat conduction with high in-plane uniformity is performed, and the thermal conductivity between the intermediate dielectric plate 90 and the conductive plate 91 is H.
It is controlled by the pressure of e gas. Therefore, the O-ring 94
And the wafer W mounting surface are thermally separated from each other, and the temperature of the wafer W can be more easily controlled to a predetermined processing temperature while suppressing deterioration of the O-ring 94 due to heat.
【0064】本発明では、図11に示す載置台8の中間
誘電体プレ−ト80や図12に示す載置台9の中間誘電
体プレ−ト90を、第2の実施の形態の中間誘電体プレ
−ト60のように構成してもよい。また図12に示す載
置台9では誘電体プレ−ト5と導電性プレ−ト91との
間に第1或いは第2の実施の形態の中間誘電体プレ−ト
4,60を設けるようにしてもよいし、中間誘電体プレ
−ト90に静電チャック用の電極を埋め込み、導電性プ
レ−ト91と中間誘電体プレ−ト90との間を静電吸着
させるようにしてもよい。In the present invention, the intermediate dielectric plate 80 of the mounting table 8 shown in FIG. 11 and the intermediate dielectric plate 90 of the mounting table 9 shown in FIG. 12 are replaced with the intermediate dielectric plate of the second embodiment. It may be configured as a plate 60. In the mounting table 9 shown in FIG. 12, the intermediate dielectric plates 4 and 60 of the first or second embodiment are provided between the dielectric plate 5 and the conductive plate 91. Alternatively, an electrode for an electrostatic chuck may be embedded in the intermediate dielectric plate 90 so that the conductive plate 91 and the intermediate dielectric plate 90 are electrostatically attracted to each other.
【0065】以上において本発明はECRプラズマ装置
以外の真空処理装置にも適用することができる。また第
1の実施の形態及び第2に実施の形態の中間誘電体プレ
−トは1枚であってもよいし、2枚以上積層して設ける
ようにしてもよく、さらに第1の実施の形態の中間誘電
体プレ−トと第2の実施の形態の中間誘電体プレ−トと
を積層して設けるようにしてもよい。さらにまた第1の
実施の形態の中間誘電体プレ−トにはヒ−タを設けない
構成としてもよいし、第1或いは第2の実施の形態の載
置台3,6の誘電体プレ−ト5と中間誘電体プレ−ト
4,60との間に導電性プレ−トを設ける構成としても
よい。As described above, the present invention can be applied to a vacuum processing apparatus other than the ECR plasma apparatus. In the first and second embodiments, the number of intermediate dielectric plates may be one, or two or more may be provided by lamination. The intermediate dielectric plate of the embodiment and the intermediate dielectric plate of the second embodiment may be provided in a stacked manner. Further, the intermediate dielectric plate of the first embodiment may be provided with no heater, or the dielectric plates of the mounting tables 3 and 6 of the first or second embodiment. A configuration may be adopted in which a conductive plate is provided between 5 and the intermediate dielectric plates 4 and 60.
【0066】[0066]
【発明の効果】本発明によれば、高温のプロセスにおい
ても載置台に設けられたOリングの変質を抑え、また面
内均一性の高い真空処理を行うことができ、特に請求項
3〜5の発明によれば、誘電体プレ−トと中間誘電体プ
レ−トとの間の熱伝導度が調整できるので被処理基板の
温度を制御することができる。According to the present invention, even in a high-temperature process, deterioration of the O-ring provided on the mounting table can be suppressed, and vacuum processing with high in-plane uniformity can be performed. According to the invention, since the thermal conductivity between the dielectric plate and the intermediate dielectric plate can be adjusted, the temperature of the substrate to be processed can be controlled.
【図1】本発明の一実施の形態に係る真空処理装置の一
例を示す断面図である。FIG. 1 is a sectional view showing an example of a vacuum processing apparatus according to an embodiment of the present invention.
【図2】本発明の真空処理装置に用いられる載置台の一
例を示す断面図である。FIG. 2 is a sectional view showing an example of a mounting table used in the vacuum processing apparatus of the present invention.
【図3】前記載置台の一部を示す断面図である。FIG. 3 is a sectional view showing a part of the mounting table.
【図4】層間絶縁膜を成膜する際の載置台の温度を示す
説明図である。FIG. 4 is an explanatory diagram showing a temperature of a mounting table when an interlayer insulating film is formed.
【図5】前記載置台の作用を説明するための説明図であ
る。FIG. 5 is an explanatory diagram for explaining the operation of the mounting table.
【図6】本発明の真空処理装置に用いられる載置台の他
の例を示す断面図である。FIG. 6 is a sectional view showing another example of the mounting table used in the vacuum processing apparatus of the present invention.
【図7】本発明の真空処理装置に用いられる載置台のさ
らに他の例を示す断面図である。FIG. 7 is a sectional view showing still another example of a mounting table used in the vacuum processing apparatus of the present invention.
【図8】前記載置台の作用を説明するための説明図であ
る。FIG. 8 is an explanatory diagram for explaining an operation of the mounting table.
【図9】前記載置台の作用を説明するための特性図であ
る。FIG. 9 is a characteristic diagram for explaining the operation of the mounting table.
【図10】本発明の真空処理装置に用いられる載置台の
さらに他の例を示す断面図である。FIG. 10 is a sectional view showing still another example of a mounting table used in the vacuum processing apparatus of the present invention.
【図11】本発明の真空処理装置に用いられる載置台の
さらに他の例を示す断面図である。FIG. 11 is a sectional view showing still another example of a mounting table used in the vacuum processing apparatus of the present invention.
【図12】本発明の真空処理装置に用いられる載置台の
さらに他の例を示す断面図である。FIG. 12 is a sectional view showing still another example of the mounting table used in the vacuum processing apparatus of the present invention.
【図13】従来のECRプラズマ装置を示す断面図であ
る。FIG. 13 is a sectional view showing a conventional ECR plasma device.
2 真空容器 21 プラズマ室 26 反応室 3,6,7,8,9 載置台 31,82,93 冷却部 32,82a,93a 冷媒流路 33,83,94 Oリング 4A 第1の中間誘電体プレ−ト 4B 第2の中間誘電体プレ−ト 41,51 電極 42,52 ヒ−タ 5 誘電体プレ−ト 60,70,80,90 中間誘電体プレ−ト 61 凹部 71,72,80a,80b,90a 電極 91 導電性プレ−ト 2 Vacuum container 21 Plasma chamber 26 Reaction chamber 3, 6, 7, 8, 9 Mounting table 31, 82, 93 Cooling unit 32, 82a, 93a Refrigerant channel 33, 83, 94 O-ring 4A First intermediate dielectric preform 4B Second intermediate dielectric plate 41,51 Electrode 42,52 Heater 5 Dielectric plate 60,70,80,90 Intermediate dielectric plate 61 Recess 71,72,80a, 80b , 90a Electrode 91 Conductive plate
Claims (11)
処理基板の載置台とを備え、誘電体プレ−トに加熱手段
と被処理基板吸着用の静電チャックを構成するための電
極とを設け、この誘電体プレ−トを冷却手段を備えた冷
却部の上に設けて前記載置台を構成した真空処理装置に
おいて、 前記冷却部の表面にリング状の樹脂製シ−ル材を介して
接合され、静電チャックを構成するための電極が表面部
に埋め込まれた中間誘電体プレ−トと、 前記シ−ル材で囲まれた領域に熱伝導用の気体を供給す
るための手段とを備え、 前記中間誘電体プレ−トの表面に、当該中間誘電体プレ
−トの静電チャックによる静電気力により前記誘電体プ
レ−トを接合したことを特徴とする真空処理装置。An electrode for forming a heating means and an electrostatic chuck for adsorbing a substrate to be processed is provided on a dielectric plate, comprising a vacuum chamber and a mounting table for the substrate to be processed provided in the vacuum chamber. Wherein the dielectric plate is provided on a cooling unit provided with cooling means to constitute a mounting table, wherein a ring-shaped resin seal material is provided on the surface of the cooling unit. An intermediate dielectric plate in which electrodes for constituting an electrostatic chuck are embedded in a surface portion, and a gas for supplying heat to a region surrounded by the seal material. Means, wherein the dielectric plate is joined to the surface of the intermediate dielectric plate by electrostatic force of an electrostatic chuck of the intermediate dielectric plate.
−トとの間に、静電チャックを構成するための電極が埋
め込まれた中間誘電体プレ−トを複数枚設け、中間誘電
体プレ−ト同士を静電気力により接合したことを特徴と
する請求項1記載の真空処理装置。2. A plurality of intermediate dielectric plates having electrodes embedded therein for forming an electrostatic chuck are provided between a ring-shaped resin seal material and a dielectric plate. 2. The vacuum processing apparatus according to claim 1, wherein the dielectric plates are joined together by electrostatic force.
処理基板の載置台とを備え、誘電体プレ−トに加熱手段
と被処理基板吸着用の静電チャックを構成するための電
極とを設け、この誘電体プレ−トを冷却手段を備えた冷
却部の上に設けて前記載置台を構成した真空処理装置に
おいて、 前記誘電体プレ−トの被処理基板の載置面と反対の面側
に設けられた中間誘電体プレ−トと、 前記中間誘電体プレ−トと誘電体プレ−トとの接合面に
熱伝導用の気体を供給するための手段とを備え、 前記中間誘電体プレ−トと誘電体プレ−トとの接合面に
熱伝導用の気体を供給し、当該接合面内の前記熱伝導用
の気体の圧力を調整することにより、前記中間誘電体プ
レ−トと誘電体プレ−トとの間の熱伝導度を制御するこ
とを特徴とする真空処理装置。3. An electrode for forming a heating means and an electrostatic chuck for attracting a substrate to be processed on a dielectric plate, comprising a vacuum chamber and a mounting table for the substrate to be processed provided in the vacuum chamber. Wherein the dielectric plate is provided on a cooling unit provided with cooling means to constitute the mounting table, wherein the dielectric plate is opposite to the mounting surface of the substrate to be processed. An intermediate dielectric plate provided on the surface of the intermediate plate; and means for supplying a gas for heat conduction to a joint surface between the intermediate dielectric plate and the dielectric plate. By supplying a gas for heat conduction to the joint surface between the dielectric plate and the dielectric plate and adjusting the pressure of the gas for heat conduction in the joint surface, the intermediate dielectric plate is formed. A vacuum processing apparatus for controlling the thermal conductivity between a plate and a dielectric plate.
トとの接合面に凹凸が形成され、これにより前記中間誘
電体プレ−トと誘電体プレ−トとの接合面に形成された
隙間に熱伝導用の気体が供給されることを特徴とする請
求項3記載の真空処理装置。4. An intermediate dielectric plate and a dielectric plate.
Irregularities are formed on the joint surface between the intermediate dielectric plate and the dielectric plate, whereby gas for heat conduction is supplied to the gap formed on the joint surface between the intermediate dielectric plate and the dielectric plate. The vacuum processing apparatus according to claim 3.
を構成するための電極を埋め込み、前記中間誘電体プレ
−トと誘電体プレ−トとを静電チャックの静電気力によ
り接合したことを特徴とする請求項3又は4記載の真空
処理装置。5. An electrode for forming an electrostatic chuck is embedded in the intermediate dielectric plate, and the intermediate dielectric plate and the dielectric plate are joined by electrostatic force of the electrostatic chuck. The vacuum processing apparatus according to claim 3 or 4, wherein:
処理基板の載置台とを備え、誘電体プレ−トに加熱手段
と被処理基板吸着用の静電チャックを構成するための電
極とを設け、この誘電体プレ−トを冷却手段を備えた冷
却部の上に設けて前記載置台を構成した真空処理装置に
おいて、 前記誘電体プレ−トの被処理基板の載置面と反対の面側
に設けられ、静電チャックを構成するための電極が埋め
込まれた中間誘電体プレ−トを備え、 前記中間誘電体プレ−トと冷却部とを静電チャックの静
電気力により接合したことを特徴とする真空処理装置。6. An electrode for forming a heating means and an electrostatic chuck for adsorbing a substrate to be processed on a dielectric plate, comprising a vacuum chamber and a mounting table for the substrate to be processed provided in the vacuum chamber. Wherein the dielectric plate is provided on a cooling unit provided with cooling means to constitute the mounting table, wherein the dielectric plate is opposite to the mounting surface of the substrate to be processed. And an intermediate dielectric plate in which electrodes for constituting an electrostatic chuck are embedded, and the intermediate dielectric plate and the cooling unit are joined by the electrostatic force of the electrostatic chuck. A vacuum processing apparatus characterized by the above-mentioned.
を構成するための電極を埋め込み、前記中間誘電体プレ
−トと冷却部とを静電チャックの静電気力により接合し
たことを特徴とする請求項1,2,3,4,又は5記載
の真空処理装置。7. An electrode for forming an electrostatic chuck is embedded in the intermediate dielectric plate, and the intermediate dielectric plate and a cooling unit are joined by an electrostatic force of the electrostatic chuck. The vacuum processing apparatus according to claim 1, 2, 3, 4, or 5.
けたことを特徴とする請求項1又は2,3,4,5,
6,7記載の真空処理装置。8. The method according to claim 1, wherein said intermediate dielectric plate is provided with a heating means.
The vacuum processing apparatus according to claim 6, 7.
合面に熱伝導用の気体を供給し、当該接合面内の前記熱
伝導用の気体の圧力を調整することにより、前記冷却部
と中間誘電体プレ−トとの間の熱伝導度を制御すること
を特徴とする請求項1,2,3,4,5,6,7又は8
記載の真空処理装置。9. The cooling device according to claim 1, further comprising: supplying a heat-conducting gas to a joint surface between the cooling unit and the intermediate dielectric plate, and adjusting a pressure of the heat-conducting gas in the joint surface. 9. The method according to claim 1, wherein the thermal conductivity between the portion and the intermediate dielectric plate is controlled.
The vacuum processing apparatus as described in the above.
との間に導電性プレ−トを設けたことを特徴とする請求
項1,2,3,4,5,6,7,8又は9記載の真空処
理装置。10. A conductive plate is provided between a dielectric plate and an intermediate dielectric plate. 10. The vacuum processing apparatus according to 8 or 9.
−トとの接合面に熱伝導用の気体を供給し、当該接合面
内の前記熱伝導用の気体の圧力を調整することにより、
前記中間誘電体プレ−トと導電性プレ−トとの間の熱伝
導度を制御することを特徴とする請求項10記載の真空
処理装置。11. A gas for heat conduction is supplied to a joint surface between the intermediate dielectric plate and the conductive plate, and the pressure of the gas for heat conduction in the joint surface is adjusted. ,
11. The vacuum processing apparatus according to claim 10, wherein a thermal conductivity between the intermediate dielectric plate and the conductive plate is controlled.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32453398A JP4256503B2 (en) | 1997-10-30 | 1998-10-29 | Vacuum processing equipment |
EP99918304A EP1132956A4 (en) | 1998-10-29 | 1999-04-30 | Vacuum processor apparatus |
KR10-2001-7005066A KR100404778B1 (en) | 1998-10-29 | 1999-04-30 | Vacuum processor apparatus |
PCT/JP1999/002343 WO2000026960A1 (en) | 1998-10-29 | 1999-04-30 | Vacuum processor apparatus |
TW088107291A TW408396B (en) | 1998-10-29 | 1999-05-05 | Vacuum treatment apparatus |
US09/655,780 US6558508B1 (en) | 1998-10-29 | 2000-09-06 | Processing apparatus having dielectric plates linked together by electrostatic force |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9-316590 | 1997-10-30 | ||
JP31659097 | 1997-10-30 | ||
JP32453398A JP4256503B2 (en) | 1997-10-30 | 1998-10-29 | Vacuum processing equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH11265931A true JPH11265931A (en) | 1999-09-28 |
JP4256503B2 JP4256503B2 (en) | 2009-04-22 |
Family
ID=26568717
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---|---|---|---|
JP32453398A Expired - Fee Related JP4256503B2 (en) | 1997-10-30 | 1998-10-29 | Vacuum processing equipment |
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