JPH11265930A - Electrostatic chuck and its producing method - Google Patents
Electrostatic chuck and its producing methodInfo
- Publication number
- JPH11265930A JPH11265930A JP8245098A JP8245098A JPH11265930A JP H11265930 A JPH11265930 A JP H11265930A JP 8245098 A JP8245098 A JP 8245098A JP 8245098 A JP8245098 A JP 8245098A JP H11265930 A JPH11265930 A JP H11265930A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic
- electrostatic chuck
- metal
- composite material
- powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 14
- 239000000919 ceramic Substances 0.000 claims abstract description 55
- 239000002131 composite material Substances 0.000 claims abstract description 39
- 239000000843 powder Substances 0.000 claims abstract description 39
- 239000004020 conductor Substances 0.000 claims abstract description 22
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 239000012212 insulator Substances 0.000 claims abstract description 12
- 239000011230 binding agent Substances 0.000 claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 239000002245 particle Substances 0.000 claims description 15
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 11
- 238000007751 thermal spraying Methods 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000000465 moulding Methods 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- 229910018404 Al2 O3 Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 239000000203 mixture Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000012779 reinforcing material Substances 0.000 description 5
- 230000035515 penetration Effects 0.000 description 4
- 238000004062 sedimentation Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 239000008119 colloidal silica Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002518 antifoaming agent Substances 0.000 description 2
- LFYJSSARVMHQJB-QIXNEVBVSA-N bakuchiol Chemical compound CC(C)=CCC[C@@](C)(C=C)\C=C\C1=CC=C(O)C=C1 LFYJSSARVMHQJB-QIXNEVBVSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 238000007750 plasma spraying Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000004945 silicone rubber Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 229910018134 Al-Mg Inorganic materials 0.000 description 1
- 229910018467 Al—Mg Inorganic materials 0.000 description 1
- CAVCGVPGBKGDTG-UHFFFAOYSA-N alumanylidynemethyl(alumanylidynemethylalumanylidenemethylidene)alumane Chemical compound [Al]#C[Al]=C=[Al]C#[Al] CAVCGVPGBKGDTG-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000009694 cold isostatic pressing Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000009715 pressure infiltration Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
- C04B2111/00482—Coating or impregnation materials
- C04B2111/00577—Coating or impregnation materials applied by spraying
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
- C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Jigs For Machine Tools (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、静電チャック及び
その製造方法に関し、特に金属−セラミックス複合材料
から成る静電チャック及びその製造方法に関する。The present invention relates to an electrostatic chuck and a method of manufacturing the same, and more particularly, to an electrostatic chuck made of a metal-ceramic composite material and a method of manufacturing the same.
【０００２】[0002]
【従来の技術】静電チャックは、半導体製造装置などの
部品として最近広く使われるようになった。その理由
は、機械的なチャッキングや真空チャックに比べ、発塵
が少ない、真空中でも使えるなどのメリットが認められ
てきたためと思われる。2. Description of the Related Art Electrostatic chucks have recently been widely used as components for semiconductor manufacturing equipment and the like. The reason is considered to be that advantages such as less dust generation and use even in vacuum have been recognized as compared with mechanical chucking and vacuum chucks.
【０００３】この静電チャックは、セラミックスなどで
作製された堅固なものも使われ始めているが、まだまだ
高価なため、アルミニウム合金などの金属表面にポリイ
ミド膜やＡｌ2Ｏ3溶射膜などの絶縁膜を被覆しただけの
簡易なものが主流である。このような静電チャックは、
当然のことながら、耐久性に欠け、絶縁膜の頻繁な取り
替えを必要とするので、メンテナンスが面倒ではある
が、常温に近い比較的低温で用いるならば支障なく十分
使用できる。As the electrostatic chuck, a rigid one made of ceramics or the like has begun to be used, but since it is still expensive, an insulating film such as a polyimide film or an Al 2 O 3 sprayed film is formed on a metal surface such as an aluminum alloy. The mainstream is a simple one that is simply coated. Such an electrostatic chuck is
Naturally, it lacks durability and requires frequent replacement of the insulating film, so that maintenance is troublesome, but it can be used satisfactorily if used at a relatively low temperature near normal temperature.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、最近の
傾向としてＣＶＤなどの一部の装置には、より高温での
プロセッシングが求められ、それに伴って静電チャック
にも耐熱性が必要となってきており、上述した簡易な静
電チャックでは、この要求には全く不十分であった。そ
れは、アルミニウム合金は融点が低く、また剛性も低い
ため、例えば４５０℃以上の温度下で繰り返し使用する
と、僅かな繰り返し回数で変形を生じ、使用に耐えられ
なくなるからである。However, as a recent trend, some devices such as CVD require processing at a higher temperature, and accordingly, the electrostatic chuck also needs to have heat resistance. Thus, the above-described simple electrostatic chuck was completely insufficient for this requirement. This is because the aluminum alloy has a low melting point and low rigidity, so if it is repeatedly used at a temperature of, for example, 450 ° C. or more, it will be deformed by a small number of repetitions and cannot be used.
【０００５】本発明は、上述した静電チャックが有する
課題に鑑みなされたものであって、その目的は、耐熱性
に優れる静電チャックを提供し、その製造方法も提供す
ることにある。The present invention has been made in view of the above-mentioned problems of the electrostatic chuck, and an object of the present invention is to provide an electrostatic chuck having excellent heat resistance and to provide a manufacturing method thereof.
【０００６】[0006]
【課題を解決するための手段】本発明者等は、上記目的
を達成するため鋭意研究した結果、金属に代えて金属−
セラミックス複合材料を用いれば、耐熱性に優れた静電
チャックが得られるとの知見を得て本発明を完成した。Means for Solving the Problems The inventors of the present invention have conducted intensive studies to achieve the above object, and as a result, have found that metal-
The inventors have found that the use of a ceramic composite material can provide an electrostatic chuck having excellent heat resistance, and completed the present invention.
【０００７】即ち本発明は、（１）電導体表面に絶縁体
が被覆された静電チャックにおいて、該電導体が、金属
にセラミックス粉末を複合させた金属−セラミックス複
合材料であり、該絶縁体が、セラミックスであることを
特徴とする静電チャック（請求項１）とし、また、
（２）電導体中のセラミックス粉末が、１〜１００μｍ
の平均粒径を有するＡｌＮ、Ａｌ2Ｏ3またはＳｉＣ粉末
であり、電導体中の金属が、Ｔｉ、Ｃｒ、Ｍｎの少なく
とも１種を０．５〜１０重量％含むアルミニウム合金で
あり、絶縁体が、１０〜１００μｍの厚さを有するセラ
ミックス溶射膜であることを特徴とする請求項１記載の
静電チャック（請求項２）とし、さらに、（３）１〜１
００μｍの平均粒径を有するＡｌＮ、Ａｌ2Ｏ3またはＳ
ｉＣ粉末に、無機バインダーを加えて成形し、それを焼
成してプリフォームを形成し、そのプリフォームにＴ
ｉ、Ｃｒ、Ｍｎの少なくとも１種を０．５〜１０重量％
含むアルミニウム合金を７００〜１０００℃の温度で非
加圧で浸透させることにより電導体となる金属−セラミ
ックス複合材料を作製した後、その複合材料表面に溶射
によりセラミックス膜を形成することを特徴とする静電
チャックの製造方法（請求項３）とし、さらにまた、
（４）１〜１００μｍの平均粒径を有するＡｌＮ、Ａｌ
2Ｏ3またはＳｉＣ粉末を型枠に充填し、その充填粉末に
Ｔｉ、Ｃｒ、Ｍｎの少なくとも１種を０．５〜１０重量
％含むアルミニウム合金を７００〜１０００℃の温度で
非加圧で浸透させることにより電導体となる金属−セラ
ミックス複合材料を作製した後、その複合材料表面に溶
射によりセラミックス膜を形成することを特徴とする静
電チャックの製造方法（請求項４）とすることを要旨と
する。以下さらに詳細に説明する。That is, the present invention provides (1) an electrostatic chuck in which an insulator is coated on the surface of an electric conductor, wherein the electric conductor is a metal-ceramic composite material obtained by compounding a ceramic powder with a metal; Is an electrostatic chuck characterized by being a ceramic (Claim 1);
(2) The ceramic powder in the conductor is 1 to 100 μm
AlN, Al 2 O 3, or SiC powder having an average particle diameter of 0.5 to 10% by weight, and the metal in the conductor is an aluminum alloy containing at least one of Ti, Cr, and Mn in an amount of 0.5 to 10% by weight. Is a ceramic sprayed film having a thickness of 10 to 100 [mu] m, wherein the electrostatic chuck according to claim 1 (claim 2) is further provided.
AlN, Al 2 O 3 or S having an average particle size of 00 μm
An inorganic binder is added to the iC powder, and the mixture is molded and fired to form a preform.
0.5 to 10% by weight of at least one of i, Cr and Mn
A metal-ceramic composite material to be a conductor is produced by infiltrating an aluminum alloy containing the alloy at a temperature of 700 to 1000 ° C. without applying pressure, and then a ceramic film is formed on the surface of the composite material by thermal spraying. A method for manufacturing an electrostatic chuck (Claim 3).
(4) AlN, Al having an average particle size of 1 to 100 μm
A mold is filled with 2 O 3 or SiC powder, and an aluminum alloy containing 0.5 to 10% by weight of at least one of Ti, Cr and Mn is infiltrated at 700 to 1000 ° C. without pressure in the filled powder. A method for producing an electrostatic chuck, characterized in that after forming a metal-ceramic composite material to be an electric conductor by forming the composite material, a ceramic film is formed on the surface of the composite material by thermal spraying. And This will be described in more detail below.
【０００８】上記静電チャックの電導体としては、金属
にセラミックス粉末を複合させた金属−セラミックス複
合材料とし、絶縁体としては、セラミックスとする静電
チャックとした（請求項１）。金属とセラミックス粉末
の複合材料を電導体としたのは、その複合材料が金属に
近い電導性を有していることは勿論のこと、金属に比べ
はるかに耐熱性に優れ、しかも高温でも剛性が高く、耐
クリープ性も良いことにある。The electric conductor of the electrostatic chuck is a metal-ceramic composite material in which metal is combined with ceramic powder, and the insulator is an electrostatic chuck made of ceramic. The reason why the composite material of metal and ceramic powder is used as the conductor is not only that the composite material has conductivity close to that of metal, but also has much higher heat resistance than metal, and has high rigidity even at high temperatures. It is high and has good creep resistance.
【０００９】さらに、熱膨張率が低いことも大きな一因
となっている。それは、アルミニウム合金は熱膨張率が
極めて大きい金属として知られているが、これにセラミ
ックス粉末を複合化すると、その量に応じて熱膨張率を
小さくすることができ、それに伴って絶縁体であるセラ
ミックスとの熱膨張率差を小さくすることができ、その
結果、温度の変動に伴って発生する絶縁体内の熱応力を
より低く抑えることができ、急激な熱衝撃にも耐えるこ
とができるようになることである。さらに、熱膨張率が
小さいことにより静電チャックの面積をより広くするこ
とも可能となり、特に半導体製造装置においては、今後
予想されるシリコンウェハの大径化にも十分対応できる
静電チャックとすることができる。Further, the low coefficient of thermal expansion is also a major factor. It is known that aluminum alloy is a metal with a very high coefficient of thermal expansion, but when it is combined with ceramic powder, the coefficient of thermal expansion can be reduced according to the amount, and accordingly it is an insulator. The difference in the coefficient of thermal expansion from ceramics can be reduced, and as a result, the thermal stress in the insulator that occurs with temperature fluctuations can be kept lower, and it can withstand sudden thermal shock. It is becoming. Further, since the coefficient of thermal expansion is small, the area of the electrostatic chuck can be further increased. In particular, in the case of a semiconductor manufacturing apparatus, an electrostatic chuck that can sufficiently cope with an increase in the diameter of a silicon wafer expected in the future. be able to.
【００１０】その複合材料中のセラミックス粉末として
は、１〜１００μｍの平均粒径を有するＡｌＮ、Ａｌ2
Ｏ3またはＳｉＣ粉末とし、金属としては、Ｔｉ、Ｃ
ｒ、Ｍｎの少なくとも１種を０．５〜１０重量％含むア
ルミニウム合金とし、複合材料を被覆する絶縁体として
は、１０〜１００μｍの厚さを有するセラミックス溶射
膜とした（請求項２）。The ceramic powder in the composite material includes AlN, Al 2 having an average particle size of 1 to 100 μm.
O 3 or SiC powder, and metals such as Ti and C
An aluminum alloy containing 0.5 to 10% by weight of at least one of r and Mn was used, and a ceramic sprayed film having a thickness of 10 to 100 μm was used as an insulator covering the composite material.
【００１１】セラミックス粉末をＡｌＮ、Ａｌ2Ｏ3また
はＳｉＣ粉末としたのは、これら粉末が金属に浸透され
易いことによる。それら粉末の細かさとしては、平均粒
径で１〜１００μｍが好ましく、１μｍより細かいと金
属の浸透が難しくなり、１００μｍより粗いと複合材料
の表面が平滑になり難い。The reason why the ceramic powder is AlN, Al 2 O 3 or SiC powder is that these powders easily penetrate into the metal. The fineness of these powders is preferably 1 to 100 μm in average particle size, and if it is finer than 1 μm, penetration of metal is difficult, and if it is coarser than 100 μm, the surface of the composite material is hard to be smooth.
【００１２】また、金属をＴｉ、Ｃｒ、Ｍｎを含むアル
ミニウム合金としたのは、アルミニウム合金の耐熱性を
上げることができることによる。それは、例えば、Ｔ
ｉ、Ｃｒ、Ｍｎを含まない純ＡｌないしはＡｌ−Ｍｇ系
の合金であるとその耐熱性は６００℃程度に過ぎない
が、Ｔｉ、Ｃｒ、Ｍｎを１種以上含むと６５０℃以上に
向上する。その含む量としては、０．５〜１０重量％が
好ましく、０．５重量より少ないと耐熱性向上の効果が
少なく、１０重量％より多いと未含浸等の浸透不良を起
こす。The reason why the metal is an aluminum alloy containing Ti, Cr and Mn is that the heat resistance of the aluminum alloy can be improved. It is, for example, T
The heat resistance of pure Al or Al-Mg based alloy containing no i, Cr and Mn is only about 600 ° C., but is improved to 650 ° C. or more when one or more kinds of Ti, Cr and Mn are contained. The content thereof is preferably 0.5 to 10% by weight, and if it is less than 0.5%, the effect of improving heat resistance is small, and if it is more than 10% by weight, poor penetration such as non-impregnation occurs.
【００１３】さらに、絶縁体をセラミックス溶射膜とし
たのは、このセラミックス溶射膜が優れた耐熱性を有
し、しかも複合材料の表面に容易に形成できることによ
る。その厚さとしては、１０〜１００μｍが好ましく、
１０μｍより薄いと耐電圧が低くなり絶縁破壊が起こり
易く、１００μｍより厚いと複合材料との熱膨張率差が
顕著になり、熱衝撃による亀裂／破損が生じ易く、しか
も吸着力も低下する。Further, the reason why the insulator is a ceramic sprayed film is that the ceramic sprayed film has excellent heat resistance and can be easily formed on the surface of the composite material. The thickness is preferably 10 to 100 μm,
If the thickness is less than 10 μm, the withstand voltage is reduced and dielectric breakdown is likely to occur. If the thickness is more than 100 μm, the difference in thermal expansion coefficient from the composite material becomes significant, and cracks / breakage due to thermal shock is likely to occur, and the attraction force is also reduced.
【００１４】上記静電チャックを製造する方法として
は、１〜１００μｍの平均粒径を有するＡｌＮ、Ａｌ2
Ｏ3またはＳｉＣ粉末に、無機バインダーを加えて成形
し、それを焼成してプリフォームを形成し、そのプリフ
ォームにＴｉ、Ｃｒ、Ｍｎの少なくとも１種を０．５〜
１０重量％含むアルミニウム合金を７００〜１０００℃
の温度で非加圧で浸透させることにより電導体となる金
属−セラミックス複合材料を作製した後、その複合材料
表面に溶射によりセラミックス膜を形成することとする
製造方法とした（請求項３）。As a method of manufacturing the electrostatic chuck, AlN, Al 2 having an average particle size of 1 to 100 μm is used.
The O 3 or SiC powder, molded by adding an inorganic binder, and firing it to form a preform, 0.5 to Ti, Cr, at least one of Mn in the preform
700-1000 ° C of aluminum alloy containing 10% by weight
After producing a metal-ceramic composite material to be an electric conductor by infiltrating at a temperature of non-pressurized at a non-pressurized temperature, a ceramic film is formed by thermal spraying on the surface of the composite material.
【００１５】この方法は、電導体となる複合材料を、プ
リフォームを形成し、そのプリフォームにアルミニウム
合金を浸透させることにより作製する方法で、複合材料
中のセラミックス粉末の充填率が５０ｖｏｌ％以上と高
い場合に適している。そして、この方法で作製された複
合材料の表面に溶射によってセラミックス膜を形成する
ことにより静電チャックが作製される。According to this method, a composite material to be an electric conductor is produced by forming a preform and infiltrating an aluminum alloy into the preform. The filling rate of ceramic powder in the composite material is 50 vol% or more. Suitable for high cases. Then, a ceramic film is formed on the surface of the composite material produced by this method by thermal spraying, thereby producing an electrostatic chuck.
【００１６】一方、上記以外の他の製造方法としては、
１〜１００μｍの平均粒径を有するＡｌＮ、Ａｌ2Ｏ3ま
たはＳｉＣ粉末を型枠に充填し、その充填粉末にＴｉ、
Ｃｒ、Ｍｎの少なくとも１種を０．５〜１０重量％含む
アルミニウム合金を７００〜１０００℃の温度で非加圧
で浸透させることにより電導体となる金属−セラミック
ス複合材料を作製した後、その複合材料表面に溶射によ
りセラミックス膜を形成することとする製造方法とした
（請求項４）。On the other hand, as another manufacturing method other than the above,
A mold is filled with AlN, Al 2 O 3 or SiC powder having an average particle diameter of 1 to 100 μm, and Ti,
A metal-ceramic composite material serving as an electric conductor is produced by infiltrating an aluminum alloy containing at least one of Cr and Mn at 0.5 to 10% by weight at a temperature of 700 to 1000 ° C. without applying pressure, and then forming the composite. According to a fourth aspect of the present invention, a ceramic film is formed on a material surface by thermal spraying.
【００１７】この方法は、電導体となる複合材料を、型
枠に充填したセラミックス粉末にアルミニウム合金を浸
透させることにより作製する方法で、複合材料中のセラ
ミックス粉末の充填率が５０ｖｏｌ％以下と低い場合に
適している。そして、前記したと同様この方法で作製さ
れた複合材料の表面に溶射によってセラミックス膜を形
成することにより静電チャックが作製される。According to this method, a composite material to be an electric conductor is produced by infiltrating an aluminum alloy into ceramic powder filled in a mold, and the filling rate of the ceramic powder in the composite material is as low as 50 vol% or less. Suitable for the case. Then, a ceramic film is formed by spraying on the surface of the composite material manufactured by this method in the same manner as described above, thereby manufacturing an electrostatic chuck.
【００１８】[0018]
【発明の実施の形態】本発明の製造方法をさらに詳しく
述べると、先ず強化材として１〜１００μｍの平均粒径
を有するＡｌＮ、Ａｌ2Ｏ3またはＳｉＣ粉末を用意す
る。プリフォームを形成する場合には、これら粉末に無
機バインダーを、必要があれば有機バインダーを加えて
混合する。混合方法は均一に混合できればどんな方法で
も構わない。DETAILED DESCRIPTION OF THE INVENTION The production method of the present invention will be described in more detail. First, AlN, Al 2 O 3 or SiC powder having an average particle size of 1 to 100 μm is prepared as a reinforcing material. When forming a preform, an inorganic binder is added to these powders, and if necessary, an organic binder is added and mixed. Any mixing method may be used as long as it can be uniformly mixed.
【００１９】得られた混合物を成形する。成形方法は、
沈降成形、射出成形、ＣＩＰ成形などがあるが、いずれ
の方法でも構わない。要は非加圧で金属を浸透するのに
プリフォームの形態を保つことができ、かつ浸透を阻害
しない方法であれば何でもよい。その一例として沈降成
形について述べると、例えば、上述のセラミックス粉末
にコロイダルシリカ液などの無機バインダーを所定量添
加し、それにイオン交換水を加え、その他必要に応じて
消泡剤などを若干加えてポットミルで混合する。得られ
たスラリーを円板状の成形体が得られる型に振動しなが
ら鋳込む。鋳込んだ後粒子が沈降する間はなるべく振動
を加え充填をよくする。それを冷凍して脱型し、成形体
を得る。The resulting mixture is shaped. The molding method is
There are sedimentation molding, injection molding, CIP molding and the like, but any method may be used. In short, any method can be used as long as it can maintain the form of the preform to penetrate the metal under no pressure and does not hinder the penetration. As an example, the sedimentation molding will be described. For example, a pot mill is prepared by adding a predetermined amount of an inorganic binder such as a colloidal silica liquid to the above-mentioned ceramic powder, adding ion-exchanged water thereto, and adding a slight amount of an antifoaming agent as necessary. Mix with. The obtained slurry is cast into a mold in which a disk-shaped molded body is obtained while vibrating. During the settling of the particles after casting, vibration is applied as much as possible to improve the filling. It is frozen and demolded to obtain a molded body.
【００２０】得られた成形体を所定温度で焼成してプリ
フォームを形成する。形成したプリフォームにＴｉ、Ｃ
ｒ、Ｍｎの少なくとも１種を０．５〜１０重量％含むア
ルミニウム合金を７００〜１０００℃の温度で非加圧で
浸透させることにより電導体となる金属−セラミックス
複合材料を作製する。Ｔｉ、Ｃｒ、Ｍｎについては、そ
れら元素の違いで浸透速度が変化することもあるので、
浸透させる温度及び時間は多少調整する必要がある。The obtained molded body is fired at a predetermined temperature to form a preform. Ti, C on the formed preform
An aluminum alloy containing at least one of r and Mn in an amount of 0.5 to 10% by weight is infiltrated at 700 to 1000 ° C. in a non-pressurized state to produce a metal-ceramic composite material serving as an electric conductor. For Ti, Cr, and Mn, the penetration rate may change due to the difference between these elements.
The temperature and time for infiltration need to be adjusted slightly.
【００２１】なお、強化材がＳｉＣ粉末の場合、ＳｉＣ
粉末にアルミニウム合金が浸透すると、ＡｌとＳｉＣと
が反応して炭化アルミニウム（Ａｌ4Ｃ3）を生成し、こ
のＡｌ4Ｃ3が常温で空気中の水分と容易に反応して水酸
化アルミニウムとなり、これが金属中に不純物として存
在し、欠陥となるので、あらかじめ合金中にＳｉを含ま
せておく必要がある。このＳｉは、耐熱性を著しく劣化
させるため、強化材がＳｉＣでない場合には含ませない
が、ＳｉＣの場合には前記した理由で含ませる必要があ
り、耐熱性が５００℃程度と低くなる。しかし、この場
合にもＴｉ、Ｃｒ、Ｍｎの少なくとも１種を含ませるこ
とにより５５０℃以上に向上させることができる。When the reinforcing material is SiC powder, SiC powder is used.
When the aluminum alloy penetrates into the powder, Al and SiC react with each other to produce aluminum carbide (Al 4 C 3 ), and this Al 4 C 3 easily reacts with moisture in the air at room temperature to form aluminum hydroxide. Since this exists as an impurity in the metal and becomes a defect, it is necessary to include Si in the alloy in advance. Since Si significantly deteriorates heat resistance, it is not included when the reinforcing material is not SiC, but must be included for SiC when it is SiC, and the heat resistance is reduced to about 500 ° C. However, also in this case, the temperature can be increased to 550 ° C. or more by including at least one of Ti, Cr, and Mn.
【００２２】得られた複合材料の表面を必要な面粗さ、
平面度になるよう研削加工し、その上面に溶射で１０〜
１００μｍの厚さのセラミックス膜を形成して静電チャ
ックを作製する。セラミックス膜の種類は最も一般的な
のは、アルミナであるが、これに限定されるものではな
く、必要な特性、例えば、高い誘電率が必要であれば、
必要な誘電率の大きさに応じてセラミックスの種類を適
宜選べばよい。The surface of the obtained composite material has a required surface roughness,
Grind to a flatness and spray on the upper surface
A ceramic film having a thickness of 100 μm is formed to manufacture an electrostatic chuck. The most common type of ceramic film is alumina, but it is not limited to this. If required characteristics, for example, a high dielectric constant is required,
The type of ceramic may be appropriately selected depending on the required dielectric constant.
【００２３】以上の方法で静電チャックを作製すれば、
耐熱性に優れた静電チャックが得られる。If the electrostatic chuck is manufactured by the above method,
An electrostatic chuck having excellent heat resistance can be obtained.
【００２４】[0024]
【実施例】以下、本発明の実施例を具体的に挙げ、本発
明をより詳細に説明する。EXAMPLES Hereinafter, the present invention will be described in more detail by giving specific examples of the present invention.
【００２５】（実施例１） （１）静電チャックの作製 強化材として１６μｍの平均粒径を有するシリカコーテ
ィングしたＡｌＮ粉末（ダウケミカル社製）を用い、そ
れにバインダーとしてコロイダルシリカ液をそのシリカ
固形分がＡｌＮ粉末１００重量部に対し２重量となる量
を添加し、さらにイオン交換水を３０重量部加え、ポッ
トミルで１６時間混合した。得られたスラリーをφ２２
０×厚さ２５ｍｍの円板状の成形体が得られるシリコー
ンゴム型に流し込んで沈降成形を行い、−３０℃に冷却
して冷凍品を得た。得られた冷凍品を６００℃で５時間
焼成してプリフォームを形成した。Example 1 (1) Preparation of Electrostatic Chuck A silica-coated AlN powder (manufactured by Dow Chemical Company) having an average particle diameter of 16 μm was used as a reinforcing material, and a colloidal silica liquid was used as a binder and the silica solid was used. Then, an amount of 2 parts by weight per 100 parts by weight of AlN powder was added, and 30 parts by weight of ion-exchanged water was further added, followed by mixing with a pot mill for 16 hours. The obtained slurry is φ22
It was poured into a silicone rubber mold from which a disk-shaped molded product having a thickness of 0 x 25 mm was obtained, subjected to sedimentation molding, and cooled to -30 ° C to obtain a frozen product. The obtained frozen product was fired at 600 ° C. for 5 hours to form a preform.
【００２６】形成したプリフォームとＡｌ−５Ｔｉ組成
のアルミニウム合金とを組み合わせ、その合金を窒素気
流中で８５０℃の温度で６０時間非加圧浸透させた後、
冷却して金属−セラミックス複合材料を作製した。得ら
れた複合材料の表面を表面粗さがＲｍａｘで６．３μｍ
以下になるまで＃８０のダイアモンド砥石で研削した
後、その上面にプラズマ溶射でＡｌ2Ｏ3膜を２０μｍの
厚さに形成して静電チャックを作製した。The formed preform is combined with an aluminum alloy having an Al-5Ti composition, and the alloy is subjected to non-pressure infiltration at 850 ° C. for 60 hours in a nitrogen gas stream.
After cooling, a metal-ceramic composite material was produced. The surface of the obtained composite material has a surface roughness Rmax of 6.3 μm.
After grinding with a # 80 diamond grindstone until the thickness became below, an Al 2 O 3 film was formed on the upper surface by plasma spraying to a thickness of 20 μm to produce an electrostatic chuck.
【００２７】（２）評価 得られた静電チャックを電気炉に入れ、大気中６５０℃
の温度で２時間保持し、冷却して取り出し目視観察し
た。その結果、変形は全く無かった。このことは、本発
明の静電チャックが６５０℃以上の耐熱性を有している
ことを示している。(2) Evaluation The obtained electrostatic chuck was placed in an electric furnace, and was placed in the atmosphere at 650 ° C.
, And then cooled and taken out for visual observation. As a result, there was no deformation. This indicates that the electrostatic chuck of the present invention has heat resistance of 650 ° C. or higher.
【００２８】（実施例２） （１）静電チャックの作製 強化材として＃１８０（平均粒径６６μｍ）の市販Ｓｉ
Ｃ粉末７０重量部と＃８００（平均粒径１４μｍ）の市
販ＳｉＣ粉末３０重量部を用い、それにバインダーとし
てコロイダルシリカ液をそのシリカ固形分がＳｉＣ粉末
１００重量部に対し２重量部となる量を添加し、それに
消泡剤としてフォーマスタＶＬ（サンノブコ社製）を
０．２重量部、イオン交換水を２４重量部加え、ポット
ミルで１２時間混合した。得られたスラリーをφ３５０
×厚さ２５ｍｍの円板状の成形体が得られるシリコーン
ゴム型に流し込んで沈降成形を行い、−３０℃に冷却し
て冷凍品を得た。得られた冷凍品を１０５０℃で３時間
焼成してプリフォームを形成した。Example 2 (1) Production of Electrostatic Chuck Commercially available Si of # 180 (average particle size 66 μm) as a reinforcing material
Using 70 parts by weight of C powder and 30 parts by weight of commercially available SiC powder of # 800 (average particle size: 14 μm), a colloidal silica liquid was used as a binder in such an amount that the silica solid content was 2 parts by weight based on 100 parts by weight of SiC powder. Then, 0.2 parts by weight of FORMASTER VL (manufactured by Sannobuco) and 24 parts by weight of ion-exchanged water were added to the mixture as an antifoaming agent, followed by mixing in a pot mill for 12 hours. The obtained slurry is φ350
× Discs were cast into a silicone rubber mold having a thickness of 25 mm to obtain a molded product, subjected to sedimentation molding, and cooled to −30 ° C. to obtain a frozen product. The obtained frozen product was fired at 1050 ° C. for 3 hours to form a preform.
【００２９】形成したプリフォームとＡｌ−１２Ｓｉ−
３Ｍｇ−２Ｃｕ−３Ｔｉ組成のアルミニウム合金を組み
合わせ、その合金を窒素気流中で８２５℃の温度で６０
時間非加圧浸透させた後、冷却して金属−セラミックス
複合材料を作製した。得られた複合材料の表面を表面粗
さがＲｍａｘで６．３μｍ以下になるまでダイアモンド
砥石で研削した後、その上面にプラズマ溶射でＡｌ2Ｏ3
膜を３０μｍの厚さに形成して静電チャックを作製し
た。The formed preform and Al-12Si-
An aluminum alloy having a composition of 3Mg-2Cu-3Ti is combined, and the alloy is heated to 825 ° C in a nitrogen stream at a temperature of 825 ° C.
After non-pressurized infiltration for a time, cooling was performed to produce a metal-ceramic composite material. After grinding the surface of the obtained composite material with a diamond grindstone until the surface roughness becomes 6.3 μm or less in Rmax, Al 2 O 3 is formed on the upper surface by plasma spraying.
The film was formed to a thickness of 30 μm to produce an electrostatic chuck.
【００３０】（２）評価 得られた静電チャックを電気炉に入れ、大気中５５０℃
の温度で２時間保持し、冷却して取り出し目視観察し
た。その結果、変形は全く無かった。このことは、本発
明の静電チャックが５５０℃以上の耐熱性を有している
ことを示している。(2) Evaluation The obtained electrostatic chuck was placed in an electric furnace, and was placed in the air at 550 ° C.
, And then cooled and taken out for visual observation. As a result, there was no deformation. This indicates that the electrostatic chuck of the present invention has a heat resistance of 550 ° C. or higher.
【００３１】[0031]
【発明の効果】以上の通り、本発明にかかる方法で静電
チャックを製造すれば、耐熱性に優れた静電チャックを
得ることができるようになった。このことにより、軽
量、高剛性を維持しつつ、５５０〜６５０℃の耐熱性を
有する材料はセラミックス以外にはないことから、より
幅広い適用が可能となった。特に半導体製造装置の分野
では、今後予想されるシリコンウェハの大径化に適応で
きるものとして多いに期待できる。As described above, when an electrostatic chuck is manufactured by the method according to the present invention, an electrostatic chuck having excellent heat resistance can be obtained. As a result, there is no material other than ceramics having heat resistance of 550 to 650 ° C. while maintaining light weight and high rigidity, so that a wider application is possible. In particular, in the field of semiconductor manufacturing equipment, it can be expected that it can be adapted to a large-diameter silicon wafer expected in the future.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 高橋 平四郎 千葉県松戸市松戸新田314−１ (72)発明者 樋口 毅 東京都東久留米市氷川台１−３−９ (72)発明者 小山 富和 東京都北区浮間１−３−１−805 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Heishiro Takahashi 314-1 Matsudo Nitta, Matsudo-shi, Chiba (72) Inventor Takeshi Higuchi 1-3-9 Hikawadai, Higashi-Kurume-shi, Tokyo (72) Inventor Tomi Koyama Wa 1-3-1 805, Ukima, Kita-ku, Tokyo
Claims (4)
ャックにおいて、該電導体が、金属にセラミックス粉末
を複合させた金属−セラミックス複合材料であり、該絶
縁体が、セラミックスであることを特徴とする静電チャ
ック。1. An electrostatic chuck having a conductor surface coated with an insulator, wherein the conductor is a metal-ceramic composite material obtained by combining a metal with ceramic powder, and the insulator is ceramic. An electrostatic chuck characterized by the above-mentioned.
００μｍの平均粒径を有するＡｌＮ、Ａｌ2Ｏ3またはＳ
ｉＣ粉末であり、電導体中の金属が、Ｔｉ、Ｃｒ、Ｍｎ
の少なくとも１種を０．５〜１０重量％含むアルミニウ
ム合金であり、絶縁体が、１０〜１００μｍの厚さを有
するセラミックス溶射膜であることを特徴とする請求項
１記載の静電チャック。2. The method according to claim 1, wherein the ceramic powder in the conductor is 1 to 1%.
AlN, Al 2 O 3 or S having an average particle size of 00 μm
iC powder, and the metal in the conductor is Ti, Cr, Mn.
2. The electrostatic chuck according to claim 1, wherein the insulator is an aluminum alloy containing at least one of 0.5 to 10% by weight, and the insulator is a ceramic sprayed film having a thickness of 10 to 100 [mu] m.
Ｎ、Ａｌ2Ｏ3またはＳｉＣ粉末に、無機バインダーを加
えて成形し、それを焼成してプリフォームを形成し、そ
のプリフォームにＴｉ、Ｃｒ、Ｍｎの少なくとも１種を
０．５〜１０重量％含むアルミニウム合金を７００〜１
０００℃の温度で非加圧で浸透させることにより電導体
となる金属−セラミックス複合材料を作製した後、その
複合材料表面に溶射によりセラミックス膜を形成するこ
とを特徴とする静電チャックの製造方法。3. Al having an average particle size of 1 to 100 μm.
An inorganic binder is added to N, Al 2 O 3, or SiC powder, molded and fired to form a preform, and at least one of Ti, Cr, and Mn is added to the preform in an amount of 0.5 to 10% by weight. % Of aluminum alloy containing 700-1%
A method for manufacturing an electrostatic chuck, comprising: preparing a metal-ceramic composite material to be an electric conductor by infiltrating at a temperature of 000 ° C. under non-pressure, and then forming a ceramic film on the surface of the composite material by thermal spraying. .
Ｎ、Ａｌ2Ｏ3またはＳｉＣ粉末を型枠に充填し、その充
填粉末にＴｉ、Ｃｒ、Ｍｎの少なくとも１種を０．５〜
１０重量％含むアルミニウム合金を７００〜１０００℃
の温度で非加圧で浸透させることにより電導体となる金
属−セラミックス複合材料を作製した後、その複合材料
表面に溶射によりセラミックス膜を形成することを特徴
とする静電チャックの製造方法。4. Al having an average particle size of 1 to 100 μm
A mold is filled with N, Al 2 O 3 or SiC powder, and at least one of Ti, Cr, and Mn is added to the filled powder in an amount of 0.5 to
700-1000 ° C of aluminum alloy containing 10% by weight
A method for producing an electrostatic chuck, comprising: preparing a metal-ceramic composite material that becomes an electric conductor by infiltrating under pressure at a non-pressurized temperature, and then forming a ceramic film by thermal spraying on the surface of the composite material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8245098A JP3888766B2 (en) | 1998-03-16 | 1998-03-16 | Electrostatic chuck and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8245098A JP3888766B2 (en) | 1998-03-16 | 1998-03-16 | Electrostatic chuck and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11265930A true JPH11265930A (en) | 1999-09-28 |
| JP3888766B2 JP3888766B2 (en) | 2007-03-07 |
Family
ID=13774864
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8245098A Expired - Fee Related JP3888766B2 (en) | 1998-03-16 | 1998-03-16 | Electrostatic chuck and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3888766B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003064428A (en) * | 2001-08-27 | 2003-03-05 | Taiheiyo Cement Corp | Ceramics/metal composite member |
| JP2006332204A (en) * | 2005-05-24 | 2006-12-07 | Toto Ltd | Electrostatic chuck |
| US7312974B2 (en) | 2003-05-26 | 2007-12-25 | Kyocera Corporation | Electrostatic chuck |
| US7672111B2 (en) | 2006-09-22 | 2010-03-02 | Toto Ltd. | Electrostatic chuck and method for manufacturing same |
| WO2012014873A1 (en) * | 2010-07-26 | 2012-02-02 | 京セラ株式会社 | Electrostatic chuck |
-
1998
- 1998-03-16 JP JP8245098A patent/JP3888766B2/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003064428A (en) * | 2001-08-27 | 2003-03-05 | Taiheiyo Cement Corp | Ceramics/metal composite member |
| US7312974B2 (en) | 2003-05-26 | 2007-12-25 | Kyocera Corporation | Electrostatic chuck |
| JP2006332204A (en) * | 2005-05-24 | 2006-12-07 | Toto Ltd | Electrostatic chuck |
| US7468880B2 (en) | 2005-05-24 | 2008-12-23 | Toto Ltd. | Electrostatic chuck |
| KR100968019B1 (en) * | 2005-05-24 | 2010-07-07 | 토토 가부시키가이샤 | An electrostatic chuck |
| US7760484B2 (en) | 2005-05-24 | 2010-07-20 | Toto Ltd. | Electrostatic chuck |
| US7672111B2 (en) | 2006-09-22 | 2010-03-02 | Toto Ltd. | Electrostatic chuck and method for manufacturing same |
| WO2012014873A1 (en) * | 2010-07-26 | 2012-02-02 | 京セラ株式会社 | Electrostatic chuck |
| KR20130091630A (en) * | 2010-07-26 | 2013-08-19 | 쿄세라 코포레이션 | Electrostatic chuck |
| JP5409917B2 (en) * | 2010-07-26 | 2014-02-05 | 京セラ株式会社 | Electrostatic chuck |
| US8810992B2 (en) | 2010-07-26 | 2014-08-19 | Kyocera Corporation | Electrostatic chuck |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3888766B2 (en) | 2007-03-07 |
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