JPH1126405A - Polishing device - Google Patents
Polishing deviceInfo
- Publication number
- JPH1126405A JPH1126405A JP17570297A JP17570297A JPH1126405A JP H1126405 A JPH1126405 A JP H1126405A JP 17570297 A JP17570297 A JP 17570297A JP 17570297 A JP17570297 A JP 17570297A JP H1126405 A JPH1126405 A JP H1126405A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- workpiece
- polished
- tool
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、ウエハー等の基板
表面を高精度に研磨するための研磨装置及び方法に関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing apparatus and a polishing method for polishing a surface of a substrate such as a wafer with high precision.
【0002】[0002]
【従来の技術】近年、半導体デバイスの超微細化や高段
差化が進み、これに伴ってSOI基板、Si、GeAs、InP
等からなる半導体ウエハー、あるいは半導体集積回路形
成過程において表面に絶縁膜あるいは金属膜を有したウ
エハー、更にディスプレー用の基板等を高精度に研磨す
るための加工手段として化学機械研磨(CMP)装置が
知られている。2. Description of the Related Art In recent years, semiconductor devices have become ultra-miniaturized and highly stepped, and accordingly, SOI substrates, Si, GeAs, InP
A chemical mechanical polishing (CMP) apparatus is used as a processing means for polishing a semiconductor wafer formed of a semiconductor integrated circuit, a wafer having an insulating film or a metal film on a surface thereof, and a display substrate with high precision. Are known.
【0003】ここでは従来のCMP装置について図4と
図5を用いて説明する。図4は被加工物であるウエハー
1がウエハーホルダー3によってその被研磨面を下に向
けた状態で保持され、ウエハー1の口径よりも大きな口
径の例えばポリウレタンからなる研磨パッド2を用いて
ウエハー1を研磨する形態である。この研磨パッド2
は、主として表面に凹凸を有しているかあるいは多孔質
である。図4ではウエハー1は不図示の駆動手段によっ
て矢印が示す方向に回転する。また、研磨パッド2は不
図示の駆動手段により矢印が示す方向に回転する。これ
らウエハー1と研磨パッド2の互いの回転或いはいずれ
か一方の回転によって当接するウエハー1の被研磨面が
研磨される。このとき研磨量を向上させる目的で研磨剤
(スラリー)をスラリー供給手段5から供給する。スラ
リーは例えばミクロンオーダーからサブミクロンオーダ
ーのSiO2の微粒子が安定に分散したアルカリ水溶液であ
る。図6においてスラリーはウエハー1と研磨パッド2
との間へ外部から供給される。Here, a conventional CMP apparatus will be described with reference to FIGS. 4 and 5. FIG. FIG. 4 shows a state in which a wafer 1 to be processed is held by a wafer holder 3 with its surface to be polished facing downward, and the wafer 1 is polished using a polishing pad 2 made of, for example, polyurethane having a diameter larger than the diameter of the wafer 1. Is a form of polishing. This polishing pad 2
Has mainly irregularities on its surface or is porous. In FIG. 4, the wafer 1 is rotated in the direction indicated by the arrow by driving means (not shown). The polishing pad 2 is rotated in a direction indicated by an arrow by driving means (not shown). The surface to be polished of the wafer 1 that is in contact with the wafer 1 and the polishing pad 2 is polished by the rotation of the wafer 1 and the polishing pad 2 or the rotation of one of them. At this time, an abrasive (slurry) is supplied from the slurry supply means 5 for the purpose of improving the polishing amount. The slurry is, for example, an aqueous alkaline solution in which fine particles of SiO 2 on the order of microns to sub-microns are stably dispersed. In FIG. 6, the slurry is composed of a wafer 1 and a polishing pad 2.
Supplied from outside.
【0004】図5は、ウエハー1の口径よりも小さい口
径の研磨パッド2が研磨パッドホルダー6によって保持
され、被研磨面を上に向けて保持されるウエハー1を研
磨する形態である。FIG. 5 shows a mode in which a polishing pad 2 having a diameter smaller than the diameter of the wafer 1 is held by a polishing pad holder 6 and the wafer 1 held with the surface to be polished facing upward is polished.
【0005】このときスラリーは、研磨パッドに設けら
れた小孔7に連通する不図示のスラリー供給手段から小
孔7を介してウエハー1と研磨パッド2との間へ供給さ
れる。At this time, the slurry is supplied between the wafer 1 and the polishing pad 2 through the small holes 7 from slurry supply means (not shown) communicating with the small holes 7 provided in the polishing pad.
【0006】[0006]
【発明が解決しようとする課題】しかしながら上記従来
型のCMP装置では、ウエハー1と研磨パッド2との間に
十分な量のスラリーが保持されないという問題がある。
それは、ウエハー1ないし研磨パッド2、あるいは双方
が回転したときに遠心力が生じその結果、ウエハー1と
研磨パッド2との間に供給されたスラリーが外部へ押し
出されるためである。However, in the above-mentioned conventional CMP apparatus, there is a problem that a sufficient amount of slurry is not held between the wafer 1 and the polishing pad 2.
This is because a centrifugal force is generated when the wafer 1 and / or the polishing pad 2 rotate, and as a result, the slurry supplied between the wafer 1 and the polishing pad 2 is pushed out.
【0007】詳述するに、図4に示した従来型のCMP装
置の場合では、ウエハー1と研磨パッド2との間へ外部
からスラリーが供給されるため、スラリーは回転するウ
エハー1と研磨パッド2との間に入り込むことが困難で
ある。また、図6に示した従来型のCMP装置の場合で
は、スラリーは小孔7から供給されるので当初ウエハー
1と研磨パッド2との間に供給されるが、遠心力によっ
てウエハー1と研磨パッド2との間から外部へ出ていっ
てしまう。More specifically, in the case of the conventional CMP apparatus shown in FIG. 4, since the slurry is supplied from the outside between the wafer 1 and the polishing pad 2, the slurry is rotated by the rotating wafer 1 and the polishing pad. It is difficult to penetrate between the two. In the case of the conventional CMP apparatus shown in FIG. 6, the slurry is initially supplied between the wafer 1 and the polishing pad 2 because the slurry is supplied from the small holes 7, but the slurry is supplied between the wafer 1 and the polishing pad 2 by centrifugal force. They go outside from between the two.
【0008】その結果、図4ないし図5に示した従来の
CMP装置ではウエハー1と研磨パッド2との間には十分
な量のスラリーが保持されないまま、研磨が行われる。
その結果、研磨量が減る。そのため高い研磨量を維持す
るために新たにスラリーを供給してもウエハー1と研磨
パッド2との間に保持されるすらりーの量は再び減り、
その結果、研磨量が再び減少する。また、残存するスラ
リーは、ウエハー1と研磨パッド2との間で局在するこ
とが多く、そのまま研磨が行われるといわゆる研磨むら
が生じる。As a result, the prior art shown in FIGS.
In the CMP apparatus, polishing is performed without holding a sufficient amount of slurry between the wafer 1 and the polishing pad 2.
As a result, the polishing amount is reduced. Therefore, even if a new slurry is supplied to maintain a high polishing amount, the amount of slurry held between the wafer 1 and the polishing pad 2 decreases again,
As a result, the polishing amount decreases again. Further, the remaining slurry is often localized between the wafer 1 and the polishing pad 2, and if the polishing is performed as it is, so-called polishing unevenness occurs.
【0009】また更に、十分な量のスラリーがウエハー
1表面に保持されることでウエハー1の被研磨面が湿潤
状態を保つことができるが、十分な量のスラリーがウエ
ハー1の被研磨面に保持されない場合、ウエハー1の被
研磨面は乾燥状態となりやすい。Further, the surface to be polished of the wafer 1 can be kept wet by holding a sufficient amount of the slurry on the surface of the wafer 1, but a sufficient amount of the slurry can be kept on the surface to be polished of the wafer 1. If not held, the polished surface of the wafer 1 is likely to be in a dry state.
【0010】その結果、研磨時に発生した研磨屑がウエ
ハー1の被研磨面に予期せずして吸着する。例えばスラ
リー成分である微粒子、中でも特にSiO2の微粒子やCeか
らなる微粒子はSiからなるウエハー1に極めて吸着しや
すく、また一度吸着した上記微粒子はウエハー1から容
易に取り除くことができない。As a result, the polishing debris generated during polishing is unexpectedly adsorbed on the surface to be polished of the wafer 1. For example, fine particles as a slurry component, particularly fine particles of SiO 2 and fine particles of Ce, are extremely easily adsorbed to the wafer 1 made of Si, and the fine particles once adsorbed cannot be easily removed from the wafer 1.
【0011】また上記研磨屑は、それ自体あるいはスラ
リー成分である微粒子と乾燥状態において凝集し、大き
な凝集塊となる。その凝集塊がウエハー1表面上から十
分に除去されぬまま研磨を行えば予期せぬ傷が生じる。[0011] Further, the above-mentioned polishing debris aggregates with itself or fine particles as a slurry component in a dry state to form a large aggregate. If the polishing is performed without sufficiently removing the agglomerates from the surface of the wafer 1, unexpected scratches may occur.
【0012】また、ウエハー1と研磨パッド2との間に
十分な量のスラリーが保持されないと研磨に伴う摩擦熱
が発生しその熱が例えばウエハー1の被研磨面が半導体
素子を有するような場合半導体素子の表面が熱的に改質
され半導体素子の電気的特性を劣化させるという現象を
起こす。If a sufficient amount of slurry is not held between the wafer 1 and the polishing pad 2, frictional heat is generated during polishing, and the heat is generated when the surface to be polished of the wafer 1 has semiconductor elements. A phenomenon occurs in which the surface of the semiconductor device is thermally modified and the electrical characteristics of the semiconductor device deteriorate.
【0013】また、研磨量を上げるためにあるいは生産
性の向上のためにウエハー1ないし研磨パッド2の回転
数を上げた場合、前述した遠心力がより大きく働き、そ
の結果スラリーはウエハー1と研磨パッド2との間にほ
とんど残らない。また前述した予期せぬ摩擦熱が更に多
く発生する。When the rotation speed of the wafer 1 or the polishing pad 2 is increased in order to increase the polishing amount or to improve the productivity, the above-mentioned centrifugal force acts more. Almost no residue is left between the pad 2. Further, the above-mentioned unexpected frictional heat is further generated.
【0014】このようにウエハー1と研磨パッド2との
間にスラリーが十分な量保持されないと様々な予期せぬ
現象を生み、その結果ウエハーの品質低下を招く。As described above, if the slurry is not held between the wafer 1 and the polishing pad 2 in a sufficient amount, various unexpected phenomena occur, and as a result, the quality of the wafer is deteriorated.
【0015】また特に被研磨面がマイクロプロセッサ等
の高価な高集積回路用の基板あるいは薄膜半導体から構
成されるディスプレイ用基板である場合ではその歩留ま
りを向上させることが製造コスト削減の急務である。In particular, when the surface to be polished is an expensive substrate for a highly integrated circuit such as a microprocessor or a display substrate made of a thin film semiconductor, it is urgently necessary to reduce the production cost to improve the yield.
【0016】これらの解決方法として従来技術では必要
以上のスラリーを研磨中供給し続ける。しかしながらそ
の結果、コスト面で大きな負担となる。As a solution to these problems, in the prior art, an unnecessary amount of slurry is continuously supplied during polishing. However, as a result, a large burden is imposed on costs.
【0017】またさらに従来のウエハーはその口径が6
インチであるが、将来的にウエハーの大口径化が進み、
12インチあるいはそれ以上となる。ウエハーの大口径
化に伴いスラリーの消費量も増加するため、スラリーの
効率的な供給手段及び方法を新たに検討する必要があ
る。Further, the conventional wafer has a diameter of 6 mm.
Inch, but in the future the wafer diameter will increase,
12 inches or more. Since the consumption of the slurry increases with the increase in the diameter of the wafer, it is necessary to newly examine a means and a method for efficiently supplying the slurry.
【0018】本発明はこのような従来技術における課題
を踏まえ、ウエハーと研磨パッドとの間に十分な量のス
ラリーが保持される手段あるいは方法を提供するもので
ある。The present invention has been made in view of such problems in the prior art, and provides a means or a method for maintaining a sufficient amount of slurry between a wafer and a polishing pad.
【0019】[0019]
【課題を解決するための手段】そこで本発明は、被加工
物を保持する被加工物保持手段と、研磨工具と、前記被
加工物の被研磨面と前記研磨工具の研磨面とを上下方向
に対向させ所定の加圧力を与えて接触させるための加圧
手段と、前記被加工物と前記研磨工具の少なくともいず
れか一方を回転運動させるための駆動手段と、を有する
研磨装置において、前記被加工物と前記研磨工具の少な
くともいずれか一方を上下方向に往復運動させ前記被加
工物の前記被研磨面と前記研磨工具の前記研磨面とを繰
り返し接触乃至非接触の状態にする手段を有し、前記被
加工物と前記研磨工具とが接触と非接触の状態を繰り返
しながら研磨剤が前記被研磨面に供給されて、前記研磨
工具により前記被加工物の前記被研磨面を研磨すること
を特徴とする研磨装置である。SUMMARY OF THE INVENTION Accordingly, the present invention provides a workpiece holding means for holding a workpiece, a polishing tool, and a method of vertically moving a polishing surface of the workpiece and a polishing surface of the polishing tool. A pressurizing means for applying a predetermined pressure to the workpiece and bringing the workpiece into contact with the workpiece; and a driving means for rotating at least one of the workpiece and the polishing tool. Means for reciprocating at least one of the workpiece and the polishing tool in a vertical direction to repeatedly contact or non-contact the polished surface of the workpiece and the polishing surface of the polishing tool. An abrasive is supplied to the surface to be polished while the workpiece and the polishing tool repeat contact and non-contact states, and the polishing tool grinds the surface to be polished of the workpiece. Characteristic polishing It is the location.
【0020】また、本発明は、被加工物と研磨工具の少
なくともいずれか一方が回転し且つ前記被加工物の被研
磨面と前記研磨工具の研磨面とが所定の加圧力で互いに
接触することで前記被研磨面を研磨する研磨方法におい
て、前記被加工物の前記被研磨面と前記研磨工具の前記
研磨面とが接触と非接触の状態を繰り返し且つ前記被加
工物の前記被研磨面と前記研磨工具の前記研磨面との間
に研磨剤を供給して前記被加工物の前記被研磨面を研磨
することを特徴とする研磨方法である。Further, the present invention provides that the workpiece and / or the polishing tool rotate, and that the polished surface of the workpiece and the polished surface of the polishing tool come into contact with each other at a predetermined pressure. In the polishing method of polishing the surface to be polished, the surface to be polished of the workpiece and the polishing surface of the polishing tool repeat contact and non-contact state and the polished surface of the workpiece and A polishing method, characterized in that a polishing agent is supplied between the polishing tool and the polishing surface to polish the polishing surface of the workpiece.
【0021】(作用)本発明により研磨中に被加工物と
研磨工具との間の間隔を繰り返し狭くあるいは広くする
ことが出来る。つまり前記間隔が広いとき、該間隔に研
磨剤が入り込みやすくなり、その結果被加工物の被研磨
面には十分な量の研磨剤が安定して供給される。同様に
被加工物と研磨工具とを接触させる圧力を減じることに
よっても被研磨面に十分な量の研磨剤が安定して供給さ
れる。(Operation) According to the present invention, the interval between the workpiece and the polishing tool can be repeatedly narrowed or widened during polishing. That is, when the gap is wide, the abrasive easily enters the gap, and as a result, a sufficient amount of the abrasive is stably supplied to the surface to be polished of the workpiece. Similarly, a sufficient amount of abrasive is stably supplied to the surface to be polished by reducing the pressure at which the workpiece and the polishing tool are brought into contact.
【0022】[0022]
【発明の実施の形態】以下に本発明の実施の形態を述べ
る。Embodiments of the present invention will be described below.
【0023】(第1の実施の形態)図1の符号a乃至cに
示すように本発明の第1の実施の形態は、被加工物保持
手段(ウエハーチャック16)によって保持された被加
工物(ウエハー10)が、駆動手段24を有した研磨工
具(脱着可能な研磨パッド11を有した研磨パッドホル
ダー18)によって保持された研磨面に凹凸を有した研
磨パッド11と対向し、ウエハー10と研磨パッド11
との間隔f1、f2をa、b1、cが示す順で変化させる手段
(往復運動手段19)によって駆動する形態である。a
は研磨パッド11がウエハー10と当接し該研磨パッド
11の中心を軸として矢印Dが示す方向に回転(自転)
しウエハー10を研磨する状態を示している。このとき
往復運動手段19は、ウエハー10と研磨パッド11と
を当接する際に所定の圧力を付加するための加圧手段の
働きをも兼ねている。図1において研磨剤(スラリー2
3)は、予めウエハー10と研磨パッド11の凹部との
間F1に保持される。そしてF1に保持されたスラリー2
3がウエハー10の被研磨面と研磨パッド11の研磨面
の凸部と実質上接触している部分に入り込む。f1はウ
エハー10の被研磨面と研磨パッド11の研磨面の凸部
と実質上接触している上記部分の間隔であり、すなわち
その間隔は実質0である。そして研磨パッド11の回転
に伴い、研磨時間が経過するにつれウエハー10と研磨
パッド11との間で矢印Eが図示する様に研磨パッド1
1の自転中心から外側へと移動し、その結果研磨パッド
11の自転中心付近のスラリー23は粗となり、一方研
磨パッドの外周付近のスラリー23は密となるという局
在化が生じる。そしてこのようにaで示した状態で研磨
を長時間続けると上に述べた様に研磨むらや予期せぬ傷
が発生するといった問題が生じる。そのため上記問題が
発生する前に次の工程に進める。そのときのウエハー1
0と研磨パッド11との状態を表した図がb1である。(First Embodiment) As shown by reference numerals a to c in FIG. 1, a first embodiment of the present invention relates to a workpiece held by workpiece holding means (wafer chuck 16). The (wafer 10) faces the polishing pad 11 having an uneven surface on a polishing surface held by a polishing tool (a polishing pad holder 18 having a detachable polishing pad 11) having a driving means 24, and Polishing pad 11
In this embodiment, the gaps f1 and f2 are driven by means (reciprocating means 19) for changing the intervals f1, f2 in the order indicated by a, b1, and c. a
Indicates that the polishing pad 11 is in contact with the wafer 10 and rotates about the center of the polishing pad 11 in the direction indicated by the arrow D (rotation).
2 shows a state in which the wafer 10 is polished. At this time, the reciprocating means 19 also functions as a pressurizing means for applying a predetermined pressure when the wafer 10 and the polishing pad 11 come into contact with each other. In FIG. 1, the abrasive (slurry 2
3) is previously held at F1 between the wafer 10 and the concave portion of the polishing pad 11. And the slurry 2 held in F1
3 enters a portion where the surface to be polished of the wafer 10 and the convex portion of the polishing surface of the polishing pad 11 are substantially in contact with each other. f1 is the distance between the portion to be polished of the wafer 10 and the above-mentioned portion substantially in contact with the projection of the polishing surface of the polishing pad 11, that is, the distance is substantially zero. As the polishing time elapses with the rotation of the polishing pad 11, the polishing pad 1 is moved between the wafer 10 and the polishing pad 11 as shown by an arrow E in FIG.
1 moves outward from the center of rotation of the polishing pad 11, and as a result, the slurry 23 near the center of rotation of the polishing pad 11 becomes coarse while the slurry 23 near the outer periphery of the polishing pad 11 becomes dense. As described above, if polishing is continued for a long time in the state indicated by a, the problems such as uneven polishing and unexpected scratches occur as described above. Therefore, the process proceeds to the next step before the above problem occurs. Wafer 1 at that time
The figure showing the state of 0 and the polishing pad 11 is b1.
【0024】b1は、往復運動手段19が研磨パッド1
1を上方に移動させることでウエハー10と研磨パッド
11との間隔f2が、間隔f1よりも大となり、且つス
ラリー23が不図示のスラリー供給手段によってウエハ
ー10と研磨パッド11との間F2に供給された状態を
示している。なおこの場合ウエハー10と研磨パッド1
1とは全域で非接触である。このときウエハー10と研
磨パッド11との間F2は速やかにスラリー23によっ
て満たされる。また、このとき研磨パッド11はaで表
した状態と同様に回転し続ける。B1 indicates that the reciprocating means 19 is the polishing pad 1
By moving the wafer 1 upward, the space f2 between the wafer 10 and the polishing pad 11 becomes larger than the space f1, and the slurry 23 is supplied to the space F2 between the wafer 10 and the polishing pad 11 by slurry supply means (not shown). FIG. In this case, the wafer 10 and the polishing pad 1
1 is non-contact in the whole area. At this time, the space F2 between the wafer 10 and the polishing pad 11 is quickly filled with the slurry 23. At this time, the polishing pad 11 keeps rotating similarly to the state indicated by a.
【0025】そしてcは、b1で示したウエハー10と研
磨パッド11が、往復運動手段19によって再び当接し
研磨が行われる状態をあらわす。このときスラリー23
は、ウエハー10と研磨パッド11との間F1において
局在することなく一様に分布し、ウエハー10は再び研
磨される。その後研磨が続くとウエハー10と研磨パッ
ド11とは再びaに示す状態となる為、所定時間経過後
は再びb1に示す状態となり、続いてcに示す状態となる
ように一連の状態を繰り返す。また本発明の第1の実施
の形態においてウエハー10と研磨パッド11とはスラ
リー23がウエハー10と研磨パッド11との間F2に速
やかに満たされるようにするという目的から、b1に示
した状態つまりウエハー10と研磨パッド11とが非接
触である場合がより好ましい。また、研磨パッド11の
材質に高い弾性率を有するものを用いて研磨パッド11
を上下方向にくりかえし加圧するとウエハー10と研磨
パッド11が全面で非接触とならずともウエハー10と
研磨パッド11の凹部との間にスラリー23が速やかに
且つ均一に供給されるので状態b1に代えて、b2に示す
様に加圧力を変化させて研磨パッド11の厚みを繰り返
し厚くしたり薄くしたりすることで十分な量のスラリー
23をウエハー10の被研磨面全域へ供給出来る。The symbol c indicates a state in which the wafer 10 and the polishing pad 11 indicated by b1 are brought into contact again by the reciprocating means 19 and polishing is performed. At this time, the slurry 23
Are uniformly distributed without being localized at F1 between the wafer 10 and the polishing pad 11, and the wafer 10 is polished again. Thereafter, when polishing continues, the wafer 10 and the polishing pad 11 return to the state indicated by a, and after a predetermined time elapses, the state returns to b1 and then a series of states is repeated to reach the state indicated by c. In addition, in the first embodiment of the present invention, the wafer 10 and the polishing pad 11 are in the state shown by b1 for the purpose of promptly filling the slurry 23 with F2 between the wafer 10 and the polishing pad 11, More preferably, the wafer 10 and the polishing pad 11 are not in contact with each other. The polishing pad 11 may be made of a material having a high elastic modulus.
When the pressure is repeatedly applied in the vertical direction, the slurry 23 is quickly and uniformly supplied between the wafer 10 and the concave portion of the polishing pad 11 even if the wafer 10 and the polishing pad 11 do not come into non-contact over the entire surface. Alternatively, a sufficient amount of the slurry 23 can be supplied to the entire surface to be polished of the wafer 10 by repeatedly increasing and decreasing the thickness of the polishing pad 11 by changing the pressing force as shown by b2.
【0026】本発明においては、第1の実施の形態にお
いて説明したように駆動手段24と往復運動手段19と
して研磨パッド11を有する研磨パッドホルダー18を
駆動させる構成を用いることが出来るが、ウエハー10
を保持するウエハーチャック16を回転させ且つ上下方
向に往復運動させても構わないし、あるいは研磨パッド
ホルダー18とウエハーチャック16を共に回転させ且
つ上下方向に往復運動させても構わない。In the present invention, as described in the first embodiment, a structure for driving the polishing pad holder 18 having the polishing pad 11 as the driving means 24 and the reciprocating means 19 can be used.
The wafer chuck 16 holding the wafer may be rotated and vertically reciprocated, or the polishing pad holder 18 and the wafer chuck 16 may be rotated together and vertically reciprocated.
【0027】また、往復運動手段19としては油圧式乃
至気圧式シリンダからなる流体圧力制御手段であっても
よいし、あるいはばね等からなる硬い弾性部材を用いる
ことが出来る。The reciprocating means 19 may be a fluid pressure control means comprising a hydraulic or pneumatic cylinder, or a hard elastic member such as a spring.
【0028】また、往復運動手段19が第3の駆動手段
14に大きな負荷をかけないならば、往復運動手段19
の設置位置を研磨パッドホルダー18に設置し、研磨パ
ッドホルダー18とともに第3の駆動手段14によって
回転されるように構成することが好ましい。If the reciprocating means 19 does not apply a large load to the third driving means 14, the reciprocating means 19
It is preferable that the setting position is set on the polishing pad holder 18 so as to be rotated by the third driving means 14 together with the polishing pad holder 18.
【0029】また、本発明においては、第1の実施の形
態において説明したように研磨パッド11を水平方向へ
の運動として上記に説明した自転運動させる構成を用い
ることが出来るが、さらに上記自転の自転軸と異なる軸
を中心に回転する公転運動や、あるいは水平方向への揺
動運動を併用させることが出来る。またウエハホルダー
17に駆動装置を設置して上述の各運動を行わせること
も出来る。また、対向するウエハー10と研磨パッド1
1の中心を揃えず偏心させた状態で回転させても構わな
い。Further, in the present invention, as described in the first embodiment, the above-described configuration in which the polishing pad 11 rotates in the horizontal direction as the horizontal movement can be used. A revolving motion rotating around an axis different from the rotation axis or a swinging motion in the horizontal direction can be used together. In addition, a driving device may be provided on the wafer holder 17 to perform the above-described movements. The opposing wafer 10 and polishing pad 1
It is also possible to rotate the eccentric 1 without eccentricity.
【0030】また、本発明においては、ウエハー10と
研磨パッドは、ウエハー10の被研磨面が下を向き、そ
して研磨パッド11の研磨面が上を向く様に配置されて
も構わない。In the present invention, the wafer 10 and the polishing pad may be arranged such that the surface to be polished of the wafer 10 faces downward and the polishing surface of the polishing pad 11 faces upward.
【0031】また、本発明においては、ウエハー10の
固定手段として、ガイドリングや、減圧装置を用いてウ
エハー10の裏面をウエハーチャック16に吸着させる
真空チャックを用いることが出来る。更に摩擦係数の高
い部材を用いたバッキング材、ワックスあるいは純水を
介してウエハー裏面をウエハーチャック16に固定する
ことも好ましいものである。In the present invention, as a means for fixing the wafer 10, a guide ring or a vacuum chuck for adsorbing the back surface of the wafer 10 to the wafer chuck 16 using a pressure reducing device can be used. Further, it is also preferable to fix the back surface of the wafer to the wafer chuck 16 via a backing material using a member having a high friction coefficient, wax or pure water.
【0032】また、本発明においては、ウエハー10と
研磨パッド11との大小関係は、ウエハー10が研磨パ
ッド11より大きくても小さくても構わないが、本発明
者が詳しくウエハー10と研磨パッド11との大小関係
について検討したところ、ウエハー10と研磨パッド1
1の形状が共に略円形であってウエハー10に対して研
磨パッド11が大口径である場合が好適である。またよ
り好ましくは、ウエハー10の口径に対する研磨パッド
11の口径の比は1以上2未満である。Further, in the present invention, the magnitude relationship between the wafer 10 and the polishing pad 11 may be larger or smaller than the polishing pad 11. After examining the magnitude relationship between the wafer 10 and the polishing pad 1,
It is preferable that both of the shapes 1 are substantially circular and the polishing pad 11 has a large diameter with respect to the wafer 10. More preferably, the ratio of the diameter of the polishing pad 11 to the diameter of the wafer 10 is 1 or more and less than 2.
【0033】また、上記口径の比が1未満の場合、つま
り研磨パッド11の口径がウエハー10に対して小径で
ある場合は研磨パッド11をウエハー10の被研磨面全
面へ移動させながら研磨するかあるいは復数の研磨パッ
ド11をウエハー10の被研磨面全面を覆うように用い
れば全面研磨が可能である。ウエハー10全面のうち局
所的な一部分のみを特定して研磨することができるので
一度研磨したウエハの修正研磨に応用することが出来
る。When the diameter ratio is less than 1, that is, when the diameter of the polishing pad 11 is smaller than that of the wafer 10, polishing is performed while moving the polishing pad 11 over the entire surface of the wafer 10 to be polished. Alternatively, if a plurality of polishing pads 11 are used so as to cover the entire surface to be polished of the wafer 10, the entire surface can be polished. Since only a local part of the entire surface of the wafer 10 can be specified and polished, it can be applied to the correction polishing of a once polished wafer.
【0034】また、本発明においては、スラリー23の
供給方法としては、スラリー供給手段によってウエハー
10の外周より供給する方法あるいは研磨パッドの中心
に小孔を設けウエハー10の中心から外周へ放射状にス
ラリー23を供給する方法がある。後者による供給方法
は、回転する研磨パッド11の遠心力に順じてスラリー
が放射状に移動するため、ウエハー全面にスラリー23
を供給することが出来る点でより好ましい方法である。In the present invention, the slurry 23 can be supplied from the outer periphery of the wafer 10 by the slurry supply means or by providing a small hole at the center of the polishing pad to radiate the slurry from the center of the wafer 10 to the outer periphery. 23 is provided. In the latter supply method, since the slurry moves radially in accordance with the centrifugal force of the rotating polishing pad 11, the slurry 23
Is more preferable in that it can supply
【0035】また、研磨パッド11は例えばポリウレタ
ンからなるもので、ポリウレタンは、発砲ポリウレタン
や多孔質ポリウレタン、或いは高密度且つ高剛性ポリウ
レタンであってもよい。またあるいは、研磨パッド11
はテフロンからなるものでもよい。The polishing pad 11 is made of, for example, polyurethane, and the polyurethane may be foamed polyurethane, porous polyurethane, or high-density and high-rigidity polyurethane. Alternatively, the polishing pad 11
May be made of Teflon.
【0036】また、本発明において用いられる研磨剤
は、例えばシリカ(SiO2)、アルミナ(Al2O3)、酸化
マンガン(MnO2)、酸化セリウム(CeO)等の微粒子の
み、あるいは前記微粒子を水酸化ナトリウム(NaOH)、水
酸化カリウム(KOH)、過酸化水素(H2O2)等を含む液体に
分散させたものが挙げられる。例えば被研磨対象物の構
成元素がSiならばSiO2、CeO等の微粒子を分散させたス
ラリー、また被研磨対象物の構成元素がAl、Cu、W等の
金属であればAl2O3 、MnO2の微粒子を分散させたスラリ
ーを用いることがより好ましい。The abrasive used in the present invention may be, for example, only fine particles of silica (SiO 2 ), alumina (Al 2 O 3 ), manganese oxide (MnO 2 ), cerium oxide (CeO) or the like. Examples thereof include those dispersed in a liquid containing sodium hydroxide (NaOH), potassium hydroxide (KOH), hydrogen peroxide (H 2 O 2 ), and the like. For example, if the constituent element of the object to be polished is Si, SiO 2 , a slurry in which fine particles such as CeO are dispersed, and if the constituent element of the object to be polished is a metal such as Al, Cu, and W, Al 2 O 3 , It is more preferable to use a slurry in which MnO 2 fine particles are dispersed.
【0037】また、微粒子の粒径はおよそ8nm〜50
nmで粒度分布が比較的そろっていることがより好まし
い。The particle size of the fine particles is about 8 nm to 50 nm.
More preferably, the particle size distribution is relatively uniform in nm.
【0038】また、特に酸化マンガンを研磨微粒子とし
て用いる場合には、酸化マンガン微粒子を液体に分散さ
せる必要はなく粉体のまま直接ウエハー10と研磨パッ
ドとの間に供給した状態で研磨しても構わない。In particular, when manganese oxide is used as the polishing fine particles, it is not necessary to disperse the manganese oxide fine particles in a liquid. I do not care.
【0039】また、本発明により研磨される被加工物と
しては、例えば 略円形であるSOI基板、Si、GeAs、I
nP等からなる半導体ウエハー、半導体集積回路形成過程
において表面に絶縁膜あるいは金属膜を有したウエハ
ー、あるいは表面に被研磨層を有する四角形のディスプ
レー用の基板等が挙げられる。The workpiece to be polished according to the present invention includes, for example, a substantially circular SOI substrate, Si, GeAs,
Examples include a semiconductor wafer made of nP or the like, a wafer having an insulating film or a metal film on the surface in the process of forming a semiconductor integrated circuit, or a square display substrate having a layer to be polished on the surface.
【0040】(第2の実施の形態)図2は、第2の実施
の形態によるCMP装置を示す。この装置は、ウエハー1
0をその被研磨面を上に向けた状態で保持するためのウ
エハーチャック16を有するウエハーホルダー17と、
ウエハー10を回転させるための第1の駆動手段12
と、ガイド部と動力部から構成されるウエハーを揺動さ
せるための第2の駆動手段13と、研磨パッド11を回
転するための第3ないし第4の駆動手段14、15と、
研磨パッド11を上下運動し且つウエハー10に圧接す
るための往復運動手段19と、スラリーを供給するため
のスラリー供給手段20と、往復運動手段19が研磨パ
ッド11をウエハー10に圧接するときの圧力を制御す
るための制御装置21と、ウエハー10の口径以上且つ
2倍以下である研磨パッド11をウエハー11の被研磨
面に対向するように保持する研磨パッドホルダー18
と、を有する。(Second Embodiment) FIG. 2 shows a CMP apparatus according to a second embodiment. This device is used for wafer 1
A wafer holder 17 having a wafer chuck 16 for holding the wafer 0 with its polished surface facing up;
First drive means 12 for rotating wafer 10
Second driving means 13 for swinging a wafer comprising a guide part and a power part, third and fourth driving means 14 and 15 for rotating the polishing pad 11,
Reciprocating means 19 for vertically moving the polishing pad 11 and pressing against the wafer 10, slurry supplying means 20 for supplying slurry, and pressure when the reciprocating means 19 presses the polishing pad 11 against the wafer 10. And a polishing pad holder 18 for holding a polishing pad 11 having a diameter equal to or larger than twice the diameter of the wafer 10 so as to face a surface to be polished of the wafer 11.
And
【0041】このCMP装置では、ウエハー10を保持す
るためのウエハーチャック16が第1の駆動手段12に
より矢印Gが示す方向に回転し、また第2の駆動手段1
3により矢印Hが示す方向に揺動する。また、制御装置
21と電気的に接続した往復運動手段19が脱着自在な
研磨パッド11を有する研磨パッドホルダー18を上下
に往復運動させ、研磨パッド11がウエハー10と接
触、非接触を繰り返す。このとき研磨パッド11とウエ
ハー10は制御装置21によって予め入力された任意の
圧力で互いに当接し、そして制御装置21に予め入力さ
れた任意の時間で先述の接触と非接触とが繰り返され
る。また、制御装置21は非接触状態におけるウエハー
10と研磨パッド11との間隔を制御することが出来
る。また第3の駆動手段14が矢印Iが示す方向に研磨
パッド11を自転させる。In this CMP apparatus, the wafer chuck 16 for holding the wafer 10 is rotated by the first driving means 12 in the direction shown by the arrow G, and the second driving means 1
3 swings in the direction indicated by the arrow H. The reciprocating means 19 electrically connected to the control device 21 reciprocates the polishing pad holder 18 having the detachable polishing pad 11 up and down, and the polishing pad 11 repeats contact and non-contact with the wafer 10. At this time, the polishing pad 11 and the wafer 10 abut against each other at an arbitrary pressure previously input by the control device 21, and the above-described contact and non-contact are repeated at an arbitrary time previously input to the control device 21. Further, the control device 21 can control the distance between the wafer 10 and the polishing pad 11 in a non-contact state. The third driving means 14 rotates the polishing pad 11 in the direction indicated by the arrow I.
【0042】また、第4の駆動手段15が、研磨パッド
11を矢印Jが示す方向に公転させる。このように研磨
パッド11を2つの異なる回転軸を中心に回転させるこ
とで研磨パッド11は自転と公転をする。The fourth driving means 15 revolves the polishing pad 11 in the direction indicated by the arrow J. By rotating the polishing pad 11 about two different rotation axes in this way, the polishing pad 11 rotates and revolves.
【0043】また、スラリーはスラリー供給手段20と
連通する研磨パッドホルダ18に設けられた小孔22か
らウエハー10と研磨パッド11との間に供給される。The slurry is supplied between the wafer 10 and the polishing pad 11 through a small hole 22 provided in the polishing pad holder 18 communicating with the slurry supply means 20.
【0044】このようにウエハー10と研磨パッド11
とが接触と非接触とを繰り返すことで小孔22から供給
されるスラリーがウエハー10と研磨パッド11との間
の全域に効率よく供給されるので所定時間あたりの研磨
量を確保しながらウエハー10に傷をつけることなく研
磨することが出来る。As described above, the wafer 10 and the polishing pad 11
The slurry supplied from the small holes 22 is efficiently supplied to the entire region between the wafer 10 and the polishing pad 11 by repeating contact and non-contact between the wafer 10 and the wafer 10 while ensuring the polishing amount per predetermined time. Can be polished without damaging the surface.
【0045】また、上述した第1、第3及び第4の駆動
手段12、14、15によるウエハー10と研磨パッド
11の回転方向はそれぞれ必ずしも矢印で示した方向で
ある必要はなくそれぞれ任意に回転方向を決めて構わな
い。また、回転数もそれぞれ任意に決めて構わない。ま
た回転数は数rpmから数千rpmの範囲で選択可能である。
なお、本発明者が詳しく検討した結果、第1、第3及び
第4の駆動手段12、14、15によるウエハー10と
研磨パッド11の回転方向並びに回転数はいずれも同方
向且つ同回転数とすることがウエハー研磨面をより平坦
化するためにより好ましいことがわかった。また回転数
を特定の回転数以上にすると研磨パッド11をウエハー
10から離す際ウエハー10が研磨パッド11に張り付
くという現象が減ることもわかった。例えばこのときの
回転数はおよそ10rpm以上からである。The directions of rotation of the wafer 10 and the polishing pad 11 by the first, third and fourth driving means 12, 14 and 15 are not necessarily in the directions indicated by arrows, but can be arbitrarily rotated. You can decide the direction. Further, the number of rotations may be arbitrarily determined. The rotation speed can be selected in a range from several rpm to several thousand rpm.
As a result of a detailed study by the present inventor, the rotation direction and rotation speed of the wafer 10 and the polishing pad 11 by the first, third and fourth driving means 12, 14, and 15 are all in the same direction and the same rotation speed. Has been found to be more preferable for flattening the polished surface of the wafer. It was also found that when the number of rotations was set to a specific number of rotations or more, the phenomenon that the wafer 10 was stuck to the polishing pad 11 when the polishing pad 11 was separated from the wafer 10 was reduced. For example, the rotation speed at this time is about 10 rpm or more.
【0046】以下に本発明によるウエハーの研磨方法を
説明する。The method for polishing a wafer according to the present invention will be described below.
【0047】図3は第2の実施の形態で説明した研磨装
置を用いた場合に研磨パッド11がウエハ10を研磨す
る様子を経時的に4つの状態k、l、m、nと、k乃至nの
各状態におけるウエハ10と研磨パッド11との距離が
変化する様子を表した模式図である。なおtは時間の経
過を、そしてpはウエハ10と研磨パッド11との間の
距離を表す。FIG. 3 shows four states k, l, m, n, and k to k of the polishing pad 11 polishing the wafer 10 with time when the polishing apparatus described in the second embodiment is used. FIG. 9 is a schematic diagram illustrating a state where a distance between a wafer 10 and a polishing pad 11 changes in each state of n. Here, t represents the passage of time, and p represents the distance between the wafer 10 and the polishing pad 11.
【0048】はじめにkの状態において、研磨パッド1
1はウエハ10と加圧力を受けて当接しながら自転及び
公転する。このようにして研磨が行われるが、このとき
小孔22から供給される矢印でその流れを示したスラリ
ー23は研磨パッド11とウエハ10との間隙へ入り込
んでいる。kの状態を長時間続けた場合には不均一な研
磨や凝集塊による不測の傷が生じるために次の動作とし
てウエハー10と研磨パッド11とを離す。First, in the state of k, the polishing pad 1
1 rotates and revolves while abutting on the wafer 10 under pressure. Polishing is performed in this manner. At this time, the slurry 23 indicated by the arrow supplied from the small holes 22 flows into the gap between the polishing pad 11 and the wafer 10. If the state of k is continued for a long time, uneven polishing or unexpected damage due to agglomerates may occur, so that the wafer 10 and the polishing pad 11 are separated as the next operation.
【0049】lの状態は、回転する研磨パッド11が時
刻t1に一定の距離だけ上方へ移動を開始し、ウエハー
10と研磨パッド11とが距離f2だけ離れて非接触の
状態になる。このとき研磨パッド11はkの状態と同様
に自転および公転し続ける。その結果スラリー23がウ
エハ10と研磨パッド11との間の領域全てにすばやく
行き渡る。また更に、スラリー23が行き渡ることによ
って不要な研磨屑がウエハー10の被研磨面から除去さ
れる。In the state 1, the rotating polishing pad 11 starts moving upward by a predetermined distance at time t 1, and the wafer 10 and the polishing pad 11 are separated from each other by a distance f 2 to be in a non-contact state. At this time, the polishing pad 11 keeps rotating and revolving similarly to the state of k. As a result, the slurry 23 quickly spreads over the entire region between the wafer 10 and the polishing pad 11. Furthermore, unnecessary polishing debris is removed from the surface to be polished of the wafer 10 by the spread of the slurry 23.
【0050】そしてlの状態の後ウエハー10と研磨パ
ッド11は時刻t2においてmの状態つまり回転する研磨
パッド11が下方へ移動を開始し、ウエハ10と再び接
触する。そしてその後研磨パッド11は加圧力を受けて
再びウエハー10に当接し、自転することにより研磨が
なされる。After the state l, the wafer 10 and the polishing pad 11 are moved to the state m, that is, the rotating polishing pad 11 starts moving downward at time t2, and comes into contact with the wafer 10 again. After that, the polishing pad 11 receives the pressing force, comes into contact with the wafer 10 again, and is rotated by itself to be polished.
【0051】この状態がnの状態である。nの状態はk
の状態と同じである。This state is the state of n. The state of n is k
The state is the same.
【0052】以上に述べた研磨方法を繰り返すことで所
定時間あたりの研磨量を低下させることなく、被研磨面
に傷をつけずに研磨することが出来る。By repeating the above-described polishing method, polishing can be performed without reducing the amount of polishing per predetermined time and without damaging the surface to be polished.
【0053】具体的に言えば、ウエハー10を研磨する
のに要する時間を1分とするならば、該1分の間に研磨
パッドがウエハー10と数回非接触となる。また研磨パ
ッド11とウエハー10とが非接触である時間、つまり
t2とt1との差とは数秒であり、その間に十分な量の
スラリーがウエハー10の被研磨面全域に供給するため
に要する時間である。また、非接触状態におけるウエハ
ー10と研磨パッド11との間の距離f2は、回転する
ウエハー10が非接触時に飛び出さない程度の距離であ
り、ウエハー10の厚みより小さく、より具体的には
0.2〜0.8mmである。More specifically, if the time required to polish the wafer 10 is 1 minute, the polishing pad is not in contact with the wafer 10 several times during the 1 minute. Also, the time during which the polishing pad 11 and the wafer 10 are out of contact, that is,
The difference between t2 and t1 is a few seconds, which is the time required to supply a sufficient amount of slurry to the entire surface of the wafer 10 to be polished. Further, the distance f2 between the wafer 10 and the polishing pad 11 in the non-contact state is a distance that does not cause the rotating wafer 10 to fly out when not in contact, and is smaller than the thickness of the wafer 10, more specifically, 0. 0.2 to 0.8 mm.
【0054】なお、研磨パッド11の上下運動の周期及
びウエハー10との間の距離は、研磨が目標とする値の
範囲内となるように設定されることが望ましい。また、
研磨パッド11の上下運動の周期を短くしたり研磨パッ
ド11の運動距離を大きくすることで研磨パッド11の
上下運動はスラリーを行き渡らせるためのポンプとして
の機能を大きく発現する。この場合も不要な凝集塊が効
果的に除去される。また、本発明は一度研磨された被加
工物の被加工面内の更に研磨すべき部分を特定し、前記
部分を研磨する修正研磨にも用いることが出来る。ま
た、研磨パッド11が弾性率のおおきな素材からなる場
合には、ウエハー10と研磨パッド11とは必ずしも上
記研磨中全域が非接触とならなくても微小な隙間を介し
て、十分な量のスラリーがウエハ10と研磨パッド11
との間に行き届く。したがって、研磨パッド11をウエ
ハー10に当接させるときの圧力を時間と共に繰り返し
増減することによっても、同様の作用効果がある。It is desirable that the period of the vertical movement of the polishing pad 11 and the distance between the polishing pad 11 and the wafer 10 are set so as to be within the range of the target value of the polishing. Also,
By shortening the period of the vertical movement of the polishing pad 11 or increasing the movement distance of the polishing pad 11, the vertical movement of the polishing pad 11 greatly functions as a pump for distributing the slurry. Also in this case, unnecessary aggregates are effectively removed. Further, the present invention can be used for a modified polishing for specifying a portion to be further polished in a processing surface of a workpiece once polished, and polishing the portion. When the polishing pad 11 is made of a material having a large elastic modulus, the wafer 10 and the polishing pad 11 need not have a sufficient amount of slurry through a small gap even if the whole area is not in non-contact during the polishing. Are the wafer 10 and the polishing pad 11
Reach between. Therefore, similar effects can be obtained by repeatedly increasing and decreasing the pressure when the polishing pad 11 is brought into contact with the wafer 10 with time.
【0055】[0055]
【発明の効果】本発明によれば研磨剤が被加工物の被研
磨面に供給され、研磨工具により前記被加工物の前記被
研磨面を研磨する研磨装置において、前記被加工物と前
記研磨工具とが接触と非接触の状態を繰り返しながら或
いは加圧力を変化させながら研磨をおこなうため、前記
被加工物と前記研磨工具との間に研磨中前記研磨剤が均
一に且つ十分な量供給される。その結果、所定時間あた
りの安定した研磨量を確保しながら傷をつけることなく
研磨することが出来る。According to the present invention, in a polishing apparatus for supplying an abrasive to a surface to be polished of a workpiece and polishing the surface to be polished of the workpiece with a polishing tool, Since the polishing is performed while the tool is repeatedly brought into contact with and not in contact with each other or while changing the pressing force, the polishing agent is uniformly and sufficiently supplied between the workpiece and the polishing tool during polishing. You. As a result, it is possible to perform polishing without scratching while securing a stable polishing amount per predetermined time.
【図1】本発明の第1の実施の形態を説明する模式図で
ある。FIG. 1 is a schematic diagram illustrating a first embodiment of the present invention.
【図2】本発明の第2の実施の形態を説明する模式図で
ある。FIG. 2 is a schematic diagram illustrating a second embodiment of the present invention.
【図3】本発明の実施例によるウエハーの研磨方法にお
いてスラリーの供給と研磨パッドの上下運動と上下運動
に伴う研磨パッドとウエハーとの間の距離を経時的に表
した模式図である。FIG. 3 is a schematic diagram showing the supply of slurry, the vertical movement of the polishing pad, and the distance between the polishing pad and the wafer due to the vertical movement of the polishing pad over time in the method of polishing a wafer according to an embodiment of the present invention.
【図4】従来の化学機械研磨装置の1形態を表す模式図
である。FIG. 4 is a schematic view illustrating one embodiment of a conventional chemical mechanical polishing apparatus.
【図5】従来の化学機械研磨装置の別の形態を表す模式
図である。FIG. 5 is a schematic view illustrating another embodiment of a conventional chemical mechanical polishing apparatus.
10、1 ウエハー 11、2 研磨パッド 12 第1の駆動手段 13 第2の駆動手段 14 第3の駆動手段 15 第4の駆動手段 16 ウエハーチャック 18 研磨パッドホルダー 19 往復運動手段 20、5 スラリー供給手段 21 制御装置 22、7 小孔 23 スラリー 24 駆動手段 17、3 ウエハーホルダー 4 研磨テーブル 6 研磨パッドホルダー DESCRIPTION OF SYMBOLS 10, 1 Wafer 11, 2 Polishing pad 12 1st drive means 13 2nd drive means 14 3rd drive means 15 4th drive means 16 Wafer chuck 18 Polishing pad holder 19 Reciprocating movement means 20, 5 Slurry supply means Reference Signs List 21 control device 22, 7 small hole 23 slurry 24 drive means 17, 3 wafer holder 4 polishing table 6 polishing pad holder
Claims (33)
と、研磨工具と、前記被加工物の被研磨面と前記研磨工
具の研磨面とを上下方向に対向させ所定の加圧力を与え
て接触させるための加圧手段と、前記被加工物と前記研
磨工具の少なくともいずれか一方を回転運動させるため
の駆動手段と、を有する研磨装置において、前記被加工
物と前記研磨工具の少なくともいずれか一方を上下方向
に往復運動させ前記被加工物の前記被研磨面と前記研磨
工具の前記研磨面とを繰り返し接触乃至非接触の状態に
する手段を有し、前記被加工物と前記研磨工具とを繰り
返し非接触の状態としながら研磨剤を前記被研磨面に供
給し、前記研磨工具により前記被加工物の前記被研磨面
を研磨することを特徴とする研磨装置。1. A workpiece holding means for holding a workpiece, a polishing tool, and a predetermined pressure is applied by vertically opposing a polished surface of the workpiece and a polishing surface of the polishing tool. And a driving unit for rotating at least one of the workpiece and the polishing tool, and at least one of the workpiece and the polishing tool. Means for reciprocating one of the workpieces in a vertical direction to repeatedly contact or non-contact the surface to be polished of the workpiece and the polishing surface of the polishing tool, wherein the workpiece and the polishing tool are provided. A polishing agent is supplied to the surface to be polished while repeatedly keeping the surface in a non-contact state, and the surface to be polished of the workpiece is polished by the polishing tool.
状態で設置されていることを特徴とする請求項1記載の
研磨装置。2. The polishing apparatus according to claim 1, wherein the polishing tool is installed with the polishing surface facing down.
で設置されていることを特徴とする請求項1記載の研磨
装置。3. The polishing apparatus according to claim 1, wherein the polishing tool is installed with a polishing surface facing upward.
磨面の全面を研磨することを特徴とする請求項1記載の
研磨装置。4. The polishing apparatus according to claim 1, wherein the polishing tool polishes the entire surface of the workpiece to be polished.
磨面の一部のみを研磨することを特徴とする請求項1記
載の研磨装置。5. The polishing apparatus according to claim 1, wherein the polishing tool polishes only a part of the polished surface of the workpiece.
の前記被研磨面より大きいことを特徴とする請求項1記
載の研磨装置。6. The polishing apparatus according to claim 1, wherein said polishing surface of said polishing tool is larger than said polishing surface of said workpiece.
あることを特徴とする請求項1記載の研磨装置。7. The polishing apparatus according to claim 1, wherein the surface to be polished of the workpiece is substantially circular.
り、且つ前記被加工物の前記被研磨面の口径に対する前
記研磨工具の前記研磨面の口径の比が1以上2未満の範
囲にあることを特徴とする請求項7記載の研磨装置。8. The polishing surface of the polishing tool is substantially circular, and the ratio of the diameter of the polishing surface of the polishing tool to the diameter of the polishing surface of the workpiece is in a range of 1 or more and less than 2. The polishing apparatus according to claim 7, wherein the polishing apparatus is provided.
の前記被研磨面より小さいことを特徴とする請求項1記
載の研磨装置。9. The polishing apparatus according to claim 1, wherein the polishing surface of the polishing tool is smaller than the surface to be polished of the workpiece.
られていることを特徴とする請求項9項記載の研磨装
置。10. The polishing apparatus according to claim 9, wherein at least two polishing tools are provided.
させることを特徴とする請求項1記載の研磨装置。11. The polishing apparatus according to claim 1, wherein the driving means rotates the polishing tool.
させることを特徴とする請求項11記載の研磨装置。12. The polishing apparatus according to claim 11, wherein said driving means revolves said polishing tool.
段を自転させることを特徴とする請求項1記載の研磨装
置。13. The polishing apparatus according to claim 1, wherein said driving means rotates said workpiece holding means on its own axis.
段を公転させることを特徴とする請求項13記載の研磨
装置。14. The polishing apparatus according to claim 13, wherein said driving means revolves said workpiece holding means.
有することを特徴とする請求項1記載の研磨装置。15. The polishing apparatus according to claim 1, further comprising swing means for swinging the polishing tool.
することを特徴とする請求項1記載の研磨装置。16. The polishing apparatus according to claim 1, further comprising swing means for swinging the workpiece.
加工物のうち一方を静止させ他方を往復運動させること
を特徴とする請求項1記載の研磨装置。17. The polishing apparatus according to claim 1, wherein said means causes one of the polishing tool and the workpiece to stand still and the other to reciprocate.
加工物の両方を往復運動させることを特徴とする請求項
1記載の研磨装置18. The polishing apparatus according to claim 1, wherein said means reciprocates both said polishing tool and said workpiece.
御手段のうち少なくともいずれか1つを有することを特
徴とする請求項1記載の研磨装置。19. The polishing apparatus according to claim 1, wherein said means has at least one of an elastic member and a fluid pressure control means.
号を前記手段に与え、非接触の状態における前記被加工
物の前記被研磨面と前記研磨工具の前記研磨面との間の
距離を任意に設定するための制御手段を有することを特
徴とする請求項1記載の研磨装置。20. An electric signal which is electrically connected to the means, and which gives an electric signal to the means, and measures a distance between the polished surface of the workpiece and the polished surface of the polishing tool in a non-contact state. 2. The polishing apparatus according to claim 1, further comprising control means for arbitrarily setting.
気信号を前記加圧手段に与え、前記研磨工具と前記被加
工物とを接触させるための圧力を任意に設定するための
制御手段を有することを特徴とする請求項1記載の研磨
装置。21. A control means electrically connected to the pressurizing means, applying an electric signal to the pressurizing means, and arbitrarily setting a pressure for bringing the polishing tool into contact with the workpiece. The polishing apparatus according to claim 1, further comprising:
給手段と連通する小孔を有していることを特徴とする請
求項1記載の研磨装置。22. The polishing apparatus according to claim 1, wherein said polishing surface of said polishing tool has a small hole communicating with an abrasive supply means.
ドとそれを保持するパッドホルダーを有することを特徴
とする請求項1記載の研磨装置。23. The polishing apparatus according to claim 1, wherein the polishing tool has a removable polishing pad and a pad holder for holding the polishing pad.
れか一方が回転し且つ前記被加工物の被研磨面と前記研
磨工具の研磨面とが所定の加圧力で互いに接触すること
で前記被研磨面を研磨する研磨方法において、前記被加
工物の前記被研磨面と前記研磨工具の前記研磨面とを繰
り返し接触と非接触の状態とし且つ前記被加工物の前記
被研磨面と前記研磨工具の前記研磨面との間に研磨剤を
供給して前記被加工物の前記被研磨面を研磨することを
特徴とする研磨方法。24. The object to be polished by rotating at least one of a workpiece and a polishing tool and contacting a polished surface of the object and a polished surface of the polishing tool with each other at a predetermined pressure. In the polishing method for polishing a surface, the polishing surface of the workpiece and the polishing surface of the polishing tool are repeatedly brought into contact and non-contact with each other, and the polishing surface of the workpiece and the polishing tool are A polishing method, characterized in that a polishing agent is supplied between the substrate and the polishing surface to polish the surface to be polished of the workpiece.
を表面に設けた絶縁性基板、被研磨層を表面に設けた半
導体基板のいずれか1つであることを特徴とする請求項
24記載の研磨方法。25. The workpiece according to claim 24, wherein the workpiece is one of a semiconductor substrate, an insulating substrate having a layer to be polished on the surface thereof, and a semiconductor substrate having a layer to be polished on the surface thereof. The polishing method as described above.
いることを特徴とする請求項24記載の研磨方法。26. The polishing method according to claim 24, wherein the polishing agent comprises only fine particles.
ミニウム、酸化マンガンのうち少なくとも1つを含むこ
とを特徴とする請求項26記載の研磨方法。27. The polishing method according to claim 26, wherein said fine particles include at least one of silicon oxide, aluminum oxide and manganese oxide.
ことを特徴とする請求項24記載の研磨方法。28. The polishing method according to claim 24, wherein the polishing agent is a liquid containing fine particles.
磨した後、更に研磨すべき部分を特定し、特定された前
記部分のみを再び研磨することを特徴とする請求項24
記載の研磨方法29. The method according to claim 24, wherein after polishing the entire surface of the workpiece, the portion to be polished is further specified, and only the specified portion is polished again.
Polishing method described
と、研磨工具と、前記被加工物の被研磨面と前記研磨工
具の研磨面とを上下方向に対向させ所定の加圧力を与え
て接触させるための加圧手段と、前記被加工物と前記研
磨工具の少なくともいずれか一方を回転運動させるため
の駆動手段と、を有する研磨装置において、前記加圧手
段が所定の周期で加圧力を変化させる手段を有し、加圧
力を変化させながら研磨剤を前記被研磨面に供給して、
前記研磨工具により前記被加工物の前記被研磨面を研磨
することを特徴とする研磨装置。30. A workpiece holding means for holding a workpiece, a polishing tool, and a predetermined pressure is applied by vertically opposing a polished surface of the workpiece and a polished surface of the polishing tool. And a driving unit for rotating at least one of the workpiece and the polishing tool, wherein the pressing unit applies a pressing force at a predetermined cycle. Has a means for changing, supplying the abrasive to the surface to be polished while changing the pressing force,
A polishing apparatus for polishing the polished surface of the workpiece with the polishing tool.
とを特徴とする請求項30記載の研磨装置。31. The polishing apparatus according to claim 30, wherein said polishing surface is made of polyurethane.
れか一方が回転し且つ前記被加工物の被研磨面と前記研
磨工具の研磨面とが所定の加圧力を受けて接触すること
で前記被研磨面を研磨する研磨方法において、所定の周
期で加圧力を変化させ且つ前記被加工物の前記被研磨面
と前記研磨工具の前記研磨面との間に研磨剤を供給して
前記被加工物の前記被研磨面を研磨することを特徴とす
る研磨方法。32. At least one of the workpiece and the polishing tool is rotated, and the polished surface of the workpiece and the polished surface of the polishing tool are brought into contact with each other by receiving a predetermined pressing force. In a polishing method for polishing a polished surface, a pressure is changed at a predetermined cycle, and an abrasive is supplied between the polished surface of the workpiece and the polished surface of the polishing tool. Polishing the surface to be polished.
とを特徴とする請求項32記載の研磨方法。33. The polishing method according to claim 32, wherein polyurethane is used for said polishing surface.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17570297A JPH1126405A (en) | 1997-07-01 | 1997-07-01 | Polishing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17570297A JPH1126405A (en) | 1997-07-01 | 1997-07-01 | Polishing device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH1126405A true JPH1126405A (en) | 1999-01-29 |
Family
ID=16000760
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17570297A Withdrawn JPH1126405A (en) | 1997-07-01 | 1997-07-01 | Polishing device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH1126405A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002067307A1 (en) * | 2001-02-20 | 2002-08-29 | Kabushiki Kaisha Ishiihyoki | Apparatus and method for surface polishing |
JP2009184088A (en) * | 2008-02-08 | 2009-08-20 | Nikon Corp | Polishing device |
JP2009279741A (en) * | 2008-05-26 | 2009-12-03 | Kovax Corp | Polishing device and method for spherical body and plate |
JP2010208014A (en) * | 2009-03-06 | 2010-09-24 | Lg Chem Ltd | Float glass polishing system |
WO2023054562A1 (en) * | 2021-09-30 | 2023-04-06 | 三桜工業株式会社 | Polishing device, polishing method, and program |
-
1997
- 1997-07-01 JP JP17570297A patent/JPH1126405A/en not_active Withdrawn
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002067307A1 (en) * | 2001-02-20 | 2002-08-29 | Kabushiki Kaisha Ishiihyoki | Apparatus and method for surface polishing |
JP2009184088A (en) * | 2008-02-08 | 2009-08-20 | Nikon Corp | Polishing device |
JP2009279741A (en) * | 2008-05-26 | 2009-12-03 | Kovax Corp | Polishing device and method for spherical body and plate |
JP2010208014A (en) * | 2009-03-06 | 2010-09-24 | Lg Chem Ltd | Float glass polishing system |
WO2023054562A1 (en) * | 2021-09-30 | 2023-04-06 | 三桜工業株式会社 | Polishing device, polishing method, and program |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6152805A (en) | Polishing machine | |
KR100272112B1 (en) | Chemical mechanical polishing apparatus and method thereof | |
US5725417A (en) | Method and apparatus for conditioning polishing pads used in mechanical and chemical-mechanical planarization of substrates | |
JP2000049122A (en) | Manufacture of semiconductor device | |
KR20060020614A (en) | Polishing machines including under-pads and methods for mechanical and/or chemical-mechanical polishing of microfeature woekpieces | |
JPH10315125A (en) | Method and device for surface grinding | |
US6270396B1 (en) | Conditioning apparatus and conditioning method | |
US6576552B2 (en) | Method for polishing semiconductor device | |
US6913528B2 (en) | Low amplitude, high speed polisher and method | |
JPH1126404A (en) | Polishing apparatus | |
US7137866B2 (en) | Polishing apparatus and method for producing semiconductors using the apparatus | |
JPH1126405A (en) | Polishing device | |
JP2007067166A (en) | Chemomechanical polishing method of sic substrate | |
JP2004356336A (en) | Double-sided polishing method of semiconductor wafer | |
JP3528501B2 (en) | Semiconductor manufacturing method | |
JPH1199470A (en) | Polishing device | |
JPH11262854A (en) | Precisely polishing device and precisely polishing method using thereof | |
JP2003225862A (en) | Polishing device | |
US7175515B2 (en) | Static pad conditioner | |
JPH11333677A (en) | Polishing device for substrate | |
US7166013B2 (en) | Polishing apparatus and method for producing semiconductors using the apparatus | |
JPH09326379A (en) | Method and apparatus for polishing semiconductor substrate | |
KR20000008937A (en) | Method and apparatus for polishing wafer | |
KR20110099432A (en) | Double side polishing machine | |
JPH11320424A (en) | Grinding wheel for polishing substrate and polishing device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20040907 |