JPH11260974A - Semiconductor device, and manufacture of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To form a clear mark by raising the mechanical strength of a semiconductor device of such structure that other main face of a semiconductor chip is exposed. SOLUTION: In a semiconductor device 1 of such a structure that other main face of a semiconductor chip 2 where a specified circuit is made in one main face, an external terminal 12 which corresponds to a plurality of electrode pads provided at one main face of the semiconductor chip and is electrically connected to it, a sealing part 14 which covers the pad, and, on the surface of the protective film 4 provided at other main face of the semiconductor chip, a mark 5 are made. Hereby, the mechanical strength of the semiconductor chip can be raised, and the mark recognition in visual inspection can be stabilized.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a manufacturing technique therefor, and more particularly to a semiconductor device having a structure in which a back surface of a semiconductor chip is exposed and a technique for manufacturing the same.

[0002]

2. Description of the Related Art In general, a semiconductor device is constructed so that the surface of the semiconductor chip is sealed with a resin or the like for the purpose of protecting the semiconductor chip. 2. Description of the Related Art In recent years, semiconductor devices have been reduced in size and thickness, and packages having a structure in which a back surface (hereinafter, referred to as another main surface) of a semiconductor chip is exposed, for example, CSP (Chip Size Package) and T
Products such as CP (Tape Carrier Package) have been commercialized. Regarding the configuration of a semiconductor device having a structure in which the other main surface of the semiconductor chip is exposed, for example, 199
The description is given on pages 139 to 141 of the first volume of "VLSI Packaging Technology" issued by Nikkei BP on May 31, 3rd. As an outline, after connecting a semiconductor chip having bumps formed on electrode pads to inner leads formed on a film carrier, a circuit forming surface (hereinafter, referred to as one main surface) of the semiconductor chip is sealed with resin by potting. This is a configuration of

In a semiconductor device having a structure in which the other main surface of the semiconductor chip is exposed, a mark, for example, a character or a symbol, is formed on the other main surface of the semiconductor chip of the semiconductor device. The need for processing is increasing. The marking process generally includes a method of forming a mark by stamping with ink and a laser mark method of forming a mark by laser processing. A mark on a semiconductor device is formed by these methods. As a marking technique for this semiconductor device, for example, “VLSI” issued by Nikkei BP on May 31, 1993.
Packaging Technology ", Volume 50, pages 51 to 51.

[0004]

However, in a semiconductor device having a structure in which the other main surface of the semiconductor chip is exposed as described above, since the other main surface of the semiconductor chip is exposed, When the mechanical strength of the semiconductor device is weak and a mechanical stress is applied to the semiconductor chip by transporting the semiconductor chip or the like, there is a problem that chips and cracks of the semiconductor chip are easily generated.

Also, when forming a mark on the semiconductor device in which the other main surface of the semiconductor chip is exposed, the mark is formed on the other main surface of the semiconductor chip. Even in the case of using a mark forming method by stamping or a laser mark method of forming a mark by the laser processing, the quality of the mark is affected by the surface condition of the other main surface of the semiconductor chip, and the mark is unclear. turn into. Further, in the mark method using the ink stamping, there is a possibility that the printing of the mark may be blurred or blurred due to ink shortage or unevenness of the ink. The type switching loss time increases.

An object of the present invention is to improve the mechanical strength and reliability of a semiconductor device having a structure in which the other main surface of a semiconductor chip is exposed, without hindering the miniaturization and thinning of the package. Technology that can be used.

Another object of the present invention is to provide a technique for forming another mainly clear mark of the semiconductor chip without being affected by the other main surface condition of the semiconductor chip. is there.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0009]

The following is a brief description of an outline of a typical invention among the inventions disclosed in the present application.

In other words, the present invention relates to a semiconductor device having a substantially square plate shape and a structure in which another main surface of a semiconductor chip having a predetermined circuit formed on one main surface is exposed, and a manufacturing technique therefor. A plurality of electrode pads provided on a surface, a plurality of external terminals provided corresponding to each of the electrode pads, and electrically connected to the electrode pads, and a sealing covering the electrode pads of the semiconductor chip And a protective film provided on the other main surface of the semiconductor chip.

Further, the semiconductor device has a mark provided on a surface of the protective film.

Further, the mark is formed on the protective film by laser processing.

[0013] Further, the protective film is formed on the other main surface of the semiconductor chip by forming a protective film on the other main surface of the semiconductor wafer when the semiconductor chip is a semiconductor wafer. A protective film is formed on the other main surface of the semiconductor chip by cutting and separating each semiconductor chip.

According to the above-described means, there is provided a semiconductor device having a substantially square plate shape and a structure in which another main surface of a semiconductor chip having a predetermined circuit formed on one main surface is exposed, and a manufacturing technique thereof. A plurality of electrode pads provided on one main surface of the semiconductor chip, a plurality of external terminals provided corresponding to each of the electrode pads, and electrically connected to the electrode pads; and Since the semiconductor device is configured to include a sealing portion that covers a pad and a protective film provided on another main surface of the semiconductor chip, mechanical strength of the semiconductor chip can be improved. Reliability can also be improved.

In the semiconductor device, a mark may be provided on a surface of the protective film.
Since the mark can be formed without being affected by the surface condition of the other main surface of the semiconductor chip, the mark can be clearly displayed, and further, the appearance defect such as sharpness and chipping of the mark can be reduced. be able to.

Further, since the marks are formed on the protective film by laser processing, appearance defects such as bleeding of the marks are reduced, and only when changing the type, only mask replacement is required. Can be improved.

When forming a protective film on the other main surface of the semiconductor chip, the semiconductor chip forms a protective film on the other main surface of the semiconductor wafer at a stage of a semiconductor wafer;
The semiconductor wafer is cut and separated into individual semiconductor chips to form a protective film on the other main surface of the semiconductor chip, so that a pick-up needle is used when picking up the semiconductor chip from the adhesive tape. Therefore, the other main surface of the semiconductor chip is not directly pushed up, and the occurrence of cracks or the like due to the push-up needle of the semiconductor chip can be reduced. Further, the semiconductor chip can be protected from mechanical stress caused by the transportation of the semiconductor chip.

[0018]

Embodiments of the present invention will be described below with reference to the drawings.

In all the drawings for explaining the embodiments of the present invention, components having the same function are denoted by the same reference numerals, and
The description of the repetition is omitted.

Embodiment 1 First, as a semiconductor device having a structure in which the other main surface of a semiconductor chip is exposed, for example, CSP (Chip Size Package) or TCP (Tape Carr)
In this embodiment, a case where the present invention is applied to a CSP semiconductor device will be described with reference to the drawings.

FIG. 1 is an oblique projection view showing a semiconductor device according to an embodiment of the present invention, FIG. 2 is a schematic plan view showing the structure of the back side of the semiconductor device, and FIG. FIG. 2A is a sectional view taken along the line AA ′.

Semiconductor device 1 according to one embodiment of the present invention
Is a small package whose package size is close to the size of a semiconductor chip as shown in FIGS. 1 to 3, for example.
This is a fan-in type CSP in which bump electrodes (external terminals) are arranged on the semiconductor chip. Further, such a CSP is also a BGA (Ball Grid Array) since the external terminals are constituted by bump electrodes.

The semiconductor device 1 has a semiconductor chip 2, and the semiconductor chip 2 has a substantially rectangular plate shape, and a predetermined circuit is formed on one main surface. The semiconductor chip 2 has, on one main surface, electrode pads 3 for electrical conduction with the outside, and the electrode pads 3 are formed, for example, along a pair of opposing sides of the semiconductor chip 2. Are arranged in the vicinity of. The semiconductor chip 2 has a protective film 4 on another main surface, that is, a surface opposite to the circuit forming surface. The protective film 4 is formed by curing a coating liquid made of, for example, an organic material of a chain polyimide, and is configured to improve the mechanical strength of the semiconductor chip 2. Further, a predetermined mark 5 is formed on the protective film 4 provided on the other main surface of the semiconductor chip 2. The mark 5 is composed of characters such as a trademark, a product name, and a lot number.

An elastomer (elastic body) 6 having an elastic structure is connected to the one main surface of the semiconductor chip 2. At this time, the elastomer 6 is connected to the semiconductor chip 2.
Are connected to one main surface of the semiconductor chip 2 except for the electrode pad 3 and its vicinity. The elastomer 6 has a three-layer structure, for example, provided with an adhesive layer on the upper and lower surfaces of a base layer of, for example, a porous fluororesin or a polyimide resin, and is adhered to the semiconductor chip 2 by the adhesive layer. On the surface of the elastomer 6 facing the bonding surface of the semiconductor chip, a plurality of bump bonding portions 7 for connecting bump electrodes described later are formed. The bump bonding portion 7 is made of, for example, Cu (copper), and is formed, for example, in a substantially circular shape corresponding to the connected bump electrode. Each of the bump bonding portions 7 has a wiring 8 and is electrically connected to a lead 9 via the wiring 8. The leads 9 are connected to the corresponding electrode pads 3 of the semiconductor chip 2. Therefore, the electrode pads 3 of the semiconductor chip 2 are electrically connected to the bump connection portions 7 via the leads 9 and the wirings 8, respectively. The semiconductor chip 2 is connected to a film base 10 made of a polyimide resin or the like via the elastomer 6. The film substrate 10 has flexibility, and has a hole 11 for bump connection at a portion corresponding to the bump connection portion 7. The bump electrodes 12 are electrically connected to the bump connection portions 7 through the bump connection holes 11, respectively. The bump electrode 12 is made of metal such as solder, for example, and is formed in a substantially ball shape. The bump electrodes 12 are arranged in a lattice shape inside the semiconductor chip 2. The film substrate 10 has an opening 13 corresponding to the electrode pad 3 of the semiconductor chip 2 and a position in the vicinity thereof. Then, the electrode pads 3 of the semiconductor chip 2 and the leads 9 are
A sealing portion 14 made of an epoxy resin or the like is formed at a connection portion with the connection portion and near the connection portion.

In the semiconductor device 1 having the structure in which the other main surface of the semiconductor chip 2 is exposed as described above, by forming the protective film 4 on the other main surface of the semiconductor chip 2,
Mechanical strength of the semiconductor device 1 can be improved,
The reliability of the semiconductor device can be improved.

Further, the protection film 4 is formed on the other main surface of the semiconductor chip 2, and marks 5 such as a trademark, a product name, and a lot number are formed on the protection film 4,
In the semiconductor device 1 having a structure in which the other main surface of the semiconductor chip 2 is exposed, the mark 5 can be clearly displayed, and appearance defects such as cut of the mark and chipping can be reduced.

Next, a method for manufacturing a semiconductor device according to an embodiment of the present invention will be described with reference to the drawings.

FIG. 4 is a view showing a manufacturing flow of the semiconductor device according to the present embodiment, and FIGS. 5A to 5D are sectional views showing an assembly of a semiconductor chip with a protective film mounted on the semiconductor device. 6 and 7 are views showing a structure of a film carrier with an elastomer, FIGS. 8 and 9 are views showing the film carrier to which a semiconductor chip is attached, and FIG. 10 is a cross-sectional view showing a film carrier connected to inner leads. ,
11 is a cross-sectional view showing the resin-sealed film carrier, FIGS. 12 and 13 are diagrams showing the bump-formed film carrier, and FIG. 14 is a schematic diagram showing a mark forming process on a semiconductor device.

A semiconductor device according to an embodiment of the present invention is manufactured, for example, according to a manufacturing flow shown in FIG.

First, a semiconductor chip 2 used for manufacturing the semiconductor device 1 is formed by slicing a cylindrical Si (silicon) ingot formed by, for example, a single crystal pulling method or the like. This is a substantially square and plate-shaped piece obtained by cutting a semiconductor wafer having a predetermined circuit formed on a main surface into predetermined circuits.

FIG. 5A is a partial sectional view of the semiconductor wafer 15, and a plurality of semiconductor chips 2 are formed on one semiconductor wafer 15. A plurality of electrode pads 3 are formed on one main surface of the semiconductor chip 2, and the electrode pads 3 are respectively arranged near a pair of opposite sides of the semiconductor chip. The semiconductor wafer 15 on which the predetermined circuit is formed is spin-coated with, for example, a coating liquid composed of an organic material such as a chain polyimide by a spinner, for example, while protecting one main surface. The spin-coated application liquid is uniformly applied to the entire other main surface of the semiconductor wafer 15 as shown in FIG. The semiconductor wafer 15 coated with the coating liquid is cured and baked at a predetermined temperature, for example, 200 to 400 ° C., so that the coating liquid is cured and a uniform protective film 4 is formed on the other main surface of the semiconductor wafer 15. It is formed.

The semiconductor wafer 15 on which the protective film 4 is formed is attached, for example, on an adhesive tape 16 attached to a ring-shaped frame member (not shown) as shown in FIG. As the pressure-sensitive adhesive tape 16, for example, a UV tape having a property that the adhesive strength is reduced by irradiation with ultraviolet rays is used. The semiconductor wafer 15 attached to the adhesive tape 16 is diced by a dicing blade in a high-speed rotation state, and the semiconductor wafer 15 is
It is cut and separated every time. At this time, the protection film 4 formed on the other main surface of the semiconductor wafer 15 is also cut integrally with the semiconductor chip 2.

The semiconductor chips 15 cut into each of the semiconductor chips 2 are sequentially picked up by a pickup device or the like. The pick-up process is performed, for example, by irradiating an ultraviolet ray to the adhesive tape 16 to which the semiconductor wafer 15 is adhered to reduce the adhesive force of the adhesive tape 16 and then pushing up the needle from the side opposite to the semiconductor wafer mounting surface of the adhesive tape 16. Is used to push up another main surface of the semiconductor chip 2 to be picked up. The protruded semiconductor chip 2 is peeled off from the adhesive tape 16 integrally with the protective film 4.

The semiconductor chip 2 peeled off from the adhesive tape 16 is vacuum-sucked by a collet disposed above the semiconductor chip 2, and the semiconductor chip 2 having the protective film 4 on another main surface as shown in FIG. can get.

By forming the protective film 4 on the other main surface of the semiconductor chip 2 in advance, the adhesive tape 16
When the semiconductor chip 2 is picked up from above, the push-up needle does not directly push up the other main surface of the semiconductor chip, and the occurrence of scratches and the like on the other main surface of the semiconductor chip by the push-up needle can be reduced. . Therefore, cracks and the like generated due to scratches of the semiconductor chip when the semiconductor chip is heated can be reduced. Further, in the manufacture of a semiconductor device, the semiconductor chip or a film carrier on which the semiconductor chip is mounted can be transported, and the semiconductor chip can be protected from mechanical stress generated during transport between processes, and the semiconductor caused by the transport can be protected. The occurrence of cracks in chips can be reduced.

The semiconductor chip 2 having the protective film 4 on the other main surface is mounted on a previously prepared elastomer-equipped film carrier 18.

The above-mentioned film carrier with elastomer 18
Are shown in FIGS. 6 and 7, for example.
One unit of the film carrier 18 is continuously arranged at a constant interval. The film carrier 18 is formed of a film substrate 10 made of a polyimide resin, and along the transport direction of the film carrier 18,
A plurality of sprocket holes 19 are formed at regular intervals near the end of the film base 10. The strip-shaped film carrier 18 can be intermittently conveyed by the sprocket holes 19 formed at regular intervals. The film carrier 18 has an opening 13 of a predetermined size corresponding to the position of the electrode pad 3 of the semiconductor chip 2 attached to the film carrier 18. In the semiconductor chip 2 of the present embodiment, a plurality of electrode pads 3 are formed in the vicinity of a pair of opposed sides, respectively, and the openings 13 are substantially corresponding to the plurality of electrode pads 3 provided on each side. It is open in a square shape. Then, the configuration is such that an inner lead connection can be made from an opening 13 formed corresponding to the arrangement of the electrode pads 3 of the semiconductor chip 2.

The film carrier 18 has a plurality of bump connection portions 7 formed on the back surface of the film carrier 18 corresponding to portions except for the vicinity of the electrode pads 3 of the semiconductor chip 2 to be mounted. The bump connection portions 7 are formed in a substantially circular shape, and are arranged in a grid at predetermined intervals. Further, the plurality of bump connection portions 7 are electrically connected to the leads 9 via wirings 8, respectively. The bump connection part 7, the wiring 8 and the lead 9 are integrally formed, and the other end of the lead 9 extends to the opening 13 of the film carrier 18, and the electrode pad of the semiconductor chip 2 is formed. 3 above. A plurality of bump connection holes 11 are formed in the film carrier 18 corresponding to the respective bump connection portions 7, and bumps are arranged in the bump connection holes 11, and the metal bumps are formed. It is configured to be electrically connected to the bump connection part 7.

Further, the film carrier 18 has an elastomer (elastic body) 6 connected to at least the mounting position of the semiconductor chip 2 except for the opening 13. The elastomer 6 has a three-layer structure, for example, and the film carrier 18 is formed by the adhesive layer of the elastomer 6.
To form a film carrier with an elastomer. A film carrier with such an elastomer is prepared.

Next, a semiconductor chip is attached to the prepared film carrier with elastomer.

The semiconductor chip is attached by attaching the semiconductor chip 2 having the protective film 4 formed on the elastomer 6 adhered to the film carrier 18 as shown in FIGS.
Are bonded as shown in FIG. The semiconductor chip 2 is attached so that the electrode pads 3 of the semiconductor chip 2 are arranged in the openings 13 of the film carrier 18 and the leads 9 are arranged corresponding to the electrode pads 3 respectively. Affixed to face down bonding. At this time, the semiconductor chip 2 is attached to the elastomer 6
Is fixed to the film carrier 18 by the adhesive layer.

The film carrier 18 on which the semiconductor chip 2 is mounted is shifted to an inner lead connection step.

In the inner lead connecting step, the leads of the film carrier 18 on which the semiconductor chip 2 is mounted are connected to the electrode pads of the semiconductor chip by, for example, a single point bonding method as shown in FIG. This connection is performed by ultrasonic thermocompression bonding of the respective leads 9 to the corresponding electrode pads 3 one by one from the opening 13 of the film carrier 18 by a bonding tool.

Next, the film carrier 18 in which all the leads 9 and the electrode pads 3 have been connected to the inner leads is transferred to a resin sealing step.

In the resin sealing step, the film carrier 18 is conveyed to a predetermined portion, and a sealing resin is applied by a dispenser or the like to form a sealing portion 14 in the film carrier 18. The sealing resin is made of, for example, an epoxy resin, and is applied from the opening 13 of the film carrier 18 by a dispenser. Then, the applied sealing resin is applied to at least a connection portion between the lead 9 and the electrode pad 3 and an area of the semiconductor chip 2 near the connection portion. At this time, the sealing resin applied from the opening 13 is in a state of being bridged between the film substrate 10 and the semiconductor chip 2. Then, the film carrier 18 coated with the sealing resin is cured and baked at a predetermined temperature to cure the sealing resin as shown in FIG. Is formed.

Next, the film carrier 18 on which the sealing portion 14 is formed is shifted to a bump forming step.

In the bump formation step, a metal ball formed in advance is prepared, and the metal ball is supplied to the bump connection portion 7 from the bump connection hole 11 of the film carrier 18. Then, the film carrier 18 in which the metal balls are supplied to all the bump connection holes 11 is reflowed under predetermined conditions. This allows
The metal ball is electrically connected to the bump connection part 7, and the bump electrode 12 is formed on the film carrier 18 as shown in FIGS. The electrode pad 3 of the semiconductor chip 2 is electrically connected to the bump electrode 18 via the lead 9, the wiring 8, and the bump connection 7.

Next, the film carrier 18 on which the bump electrodes 12 are formed is shifted to a marking step.

In the mark step, the protective film 4 provided on the other main surface of the semiconductor chip 2 mounted on the semiconductor device 1 of the film carrier 18 intermittently conveyed.
In the present embodiment, the mark 5 is formed by, for example, a laser mark method configured as shown in FIG. 14, for example, a trademark, a product name, a lot number, and the like. In the laser mark method, for example, YAG (Yttrium Aluminum
Garnet) lasers are used. Then, the laser light 21 emitted from the laser oscillator 20 reaches the mask 23 via, for example, a reflecting mirror 22. The mask 2
For example, a glass mask is used as 3, and characters formed on the semiconductor device 1 are arranged on the mask 23. The mask 23 is moved by a driving mechanism or the like, so that a predetermined character can be selected from the characters arranged on the mask 23. By switching the characters arranged on the mask 23 in this manner, a desired character can be sequentially printed on the semiconductor device 1. The laser beam 21 passing through the mask 23 is imaged by the imaging lens 24 on the protective film 4 formed on the other main surface of the semiconductor chip 2 of the semiconductor device 1. The protective film 4
A predetermined mark 5 is printed thereon.

In the semiconductor device in which the other main surface of the semiconductor chip is exposed as described above, a protective film 4 is formed on the other main surface of the semiconductor chip 2, and a mark 5 is formed on the protective film 4. The mark 5 can form a clear mark on the semiconductor device without being affected by the surface condition of the other main surface of the semiconductor chip 2. Further, since a clear mark can be formed on the semiconductor device, it is possible to reduce the appearance defect caused by the mark such as the mark break, chipping, etc., thereby improving the yield of semiconductor device manufacturing and reducing the manufacturing cost. . In addition, by forming the protective film 4 formed on the other main surface of the semiconductor chip with a color, a printed mark is formed more clearly. In addition, by forming marks with the laser mark method, appearance defects such as bleeding of marks are reduced,
Stress applied to the semiconductor chip by the irradiated laser can also be reduced. Further, since marks are formed by the laser mark method, the workability and flexibility can be improved by only changing the mask when changing the product type.

Next, the semiconductor device 1 on the film carrier 18 on which the formation of the mark 5 has been completed is shifted to a cutting step, and is cut into individual semiconductor devices 1 so that the semiconductor device 1 shown in FIG.
As shown in FIG. 3, the semiconductor device 1 having the protection film 4 on the other main surface of the exposed semiconductor chip 2 and having the mark 5 formed on the protection film 4 is obtained.

Embodiment 2 Next, a method of manufacturing a semiconductor device according to another embodiment of the present invention will be described with reference to the drawings.

In the present embodiment, as in the case of the first embodiment, a case where the present invention is applied to, for example, a method of manufacturing a Fan-in type CSP will be described.

FIG. 15 is a view showing a manufacturing flow of a semiconductor device according to another embodiment of the present invention, FIGS. 16 and 17 are views showing a step of attaching a chip to a film carrier of this embodiment, and FIG. FIG. 19 is a sectional view showing a sealing step of the present embodiment, FIG. 20 is a sectional view showing a bump forming step of the present embodiment, and FIG. 21 is a semiconductor of the present embodiment. FIG. 9 is a cross-sectional view showing a step of forming a protective film on another main surface of the chip.

A method of manufacturing a semiconductor device according to another embodiment of the present invention is performed, for example, according to a manufacturing flow shown in FIG.

First, a semiconductor chip 2 used for manufacturing a semiconductor device has a predetermined surface on a disk-shaped substrate obtained by slicing a cylindrical Si ingot formed by, for example, a single crystal pulling method. By cutting the semiconductor wafer 15 on which the circuit is formed into predetermined circuits, the semiconductor chip 2 having a substantially square plate shape is formed.
A plurality of electrode pads 3 are arranged on one main surface of the semiconductor chip 2 in the vicinity of a pair of opposed sides of the semiconductor chip 2.

As in the first embodiment, the elastomer-equipped film carrier 18 as shown in FIGS. 4 and 5 is prepared. The configuration of the elastomer-equipped film carrier is the same as in the first embodiment, and a description thereof will be omitted.

Next, a semiconductor chip is attached to the prepared film carrier with elastomer.

In attaching the semiconductor chip 2, the semiconductor chip is adhered to the elastomer 6 adhered to the film carrier 18 as shown in FIGS. The semiconductor chip 2 is attached by face-down bonding such that the electrode pads 3 are arranged in the openings 13 of the film carrier 18 and the leads 9 are arranged corresponding to the electrode pads 3. At this time, the semiconductor chip 2 is bonded and fixed to the film carrier 18 by the adhesive layer of the elastomer 6.

Next, the film carrier 18 on which the semiconductor chip 2 is mounted is transferred to an inner lead connection step, and the film carrier 1 on which the semiconductor chip 2 is mounted is mounted.
8 connects the lead to the electrode pad by, for example, a single point bonding method as shown in FIG.

Then, the film carrier 18 in which all the leads 9 and the electrode pads 3 have been connected to the inner leads is transferred to a resin sealing step, and a predetermined portion of the film carrier 18 is coated with a sealing resin by a dispenser or the like. , The applied sealing resin is at least the lead 9
Is applied to a connection portion between the semiconductor chip 2 and the electrode pad 3 and an area around the semiconductor chip 2 near the connection portion. At this time, the sealing resin applied from the opening 13 is in a state of being bridged between the film substrate 10 and the semiconductor chip 2 as in the first embodiment. Then, the film carrier 18 coated with the sealing resin is cured and baked at a predetermined temperature, and the sealing resin is cured as shown in FIG. 19 to form a sealing portion 14 covering the electrode pads of the semiconductor chip. You.

The film carrier 18 on which the sealing portion 14 has been formed is shifted to a bump forming step. In the bump forming step, metal balls formed in advance on the film carrier 18 are supplied to the bump connection portions 7 from the respective bump mounting holes 11. Then, the film carrier 18 in which the metal balls are supplied to all the bump connection holes 11 is reflowed under predetermined conditions, and FIG.
A bump electrode 12 is formed on the bump connection part 7 as shown in FIG.

Next, the protective film 4 is formed on the other main surface of the semiconductor chip 2 of the film carrier 18 on which the bump electrodes 12 are formed.

The protective film 4 is formed by applying a coating liquid 25 made of, for example, an organic material such as a chain polyimide on the other main surface of the semiconductor chip 2, and the coating liquid is formed as shown in FIG. It is formed by a drawing method in which coating is performed while moving the dispenser 26. The coating liquid 25 applied to the other main surface of the semiconductor chip 2 spreads uniformly.
Then, the coating liquid 25 is applied to the other surface of the semiconductor chip 2.
The semiconductor device 1 on which the semiconductor chip 1 is applied is cured and baked at a predetermined temperature, so that the coating liquid is cured, and the protective film 4 is formed on the other main surface of the semiconductor chip 2 mounted on the semiconductor device 1.

The semiconductor device 1 in which the protective film 4 is formed on the other main surface of the semiconductor chip 2 is shifted to a mark step, and a mark 5 is formed on the protective film 4. In the formation of the mark 5, a predetermined mark 5 is formed on the semiconductor device 1 by, for example, a laser mark method as in the first embodiment.

As described above, before the marking step, the protective film 4 is formed on the other main surface of the semiconductor chip, and the mark 5 is formed on the protective film 4. 5 can form a clear mark on the semiconductor device without being affected by the surface condition of the other main surface of the semiconductor chip. Since a clear mark can be formed on the semiconductor device, the mark sharpness, chipping,
It is possible to reduce appearance defects caused by marks such as bleeding. Further, since the protection film 4 is formed at the stage of assembling the semiconductor device, the present invention can be applied only to the assembly line of the semiconductor device.

Then, the semiconductor device 1 on which the mark 5 is formed is shifted to a cutting step, where the film carrier 18 is formed.
1 and 2, the semiconductor chip 2 has a protective film 4 on another main surface as shown in FIGS. 1 and 2, and a mark 5 is formed on the protective film 4. The device 1 is obtained.

As described above, the invention made by the present inventor has been specifically described based on the embodiments. However, the present invention is not limited to the above embodiments, and can be variously modified without departing from the gist thereof. Needless to say. For example, in this embodiment, a case where the present invention is applied to a fan-in type CSP is specifically described. However, any semiconductor device having a structure in which the other main surface of the semiconductor chip is exposed may be used. As shown in FIG. 22, the present invention is variously applicable to a TCP semiconductor device in which external terminals are formed of leads, or a semiconductor device such as a fan-out type CSP or BGA.

In the present embodiment, the stage of the semiconductor wafer
Alternatively, the case where the protective film is formed at the stage of the film carrier after the formation of the bump electrode has been described. However, the present invention is not limited to this. For example, the stage may be such that the film carrier is cut for each semiconductor device.

Further, in this embodiment, the case where the protective film is formed by applying the protective film has been described. However, for example, a protective substrate is attached to the other main surface of the semiconductor chip with an adhesive or the like, or a mark is formed in advance. Alternatively, the protection film may be formed by attaching the protection substrate to another main surface of the semiconductor chip with an adhesive or the like.

Further, in this embodiment, in a semiconductor device having a structure in which the other main surface of the semiconductor chip is exposed, a protective film formed on the other main surface of the semiconductor chip is formed by using a laser mark method by a predetermined method. Although the case of forming the mark has been described, any configuration may be used as long as the mark can be formed on the protective film formed on the other main surface of the semiconductor chip, for example, the mark is formed by an ink method. .

Further, in the present embodiment, the case of forming a trademark, a product name, a lot number, etc. as a mark has been described. However, any mark, figure, etc. formed on the protective film may be used. For example, a mark for positioning a semiconductor chip or a semiconductor device may be formed.

[0073]

The effects obtained by typical ones of the inventions disclosed in the present application will be briefly described as follows.

That is, in a semiconductor device having a substantially quadrangular plate-like structure in which another main surface of a semiconductor chip having a predetermined circuit formed on one main surface is exposed, a plurality of semiconductor chips provided on one main surface of the semiconductor chip are provided. An electrode pad, a plurality of external terminals provided corresponding to each of the electrode pads, and electrically connected to the electrode pad, a sealing portion covering the electrode pad, and other main terminals of the semiconductor chip. Having a protective film provided on the surface, and forming a predetermined mark on the surface of the protective film, thereby improving the mechanical strength of the semiconductor chip and improving the reliability of the semiconductor device. it can. Further, by forming a protective film on the other main surface of the semiconductor chip and forming a mark on the protective film, the mark can be clearly displayed, and the mark in the quality improvement and appearance inspection of the semiconductor device can be improved. Recognition can be stabilized. Further, the appearance defect of the mark can be reduced without depending on the surface condition of the other main surface of the semiconductor chip, and the yield of the semiconductor device can be improved.

[Brief description of the drawings]

FIG. 1 is an oblique projection view illustrating a schematic configuration of a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a plan view showing a semiconductor device according to one embodiment of the present invention.

FIG. 3A shows a semiconductor device according to an embodiment of the present invention;
It is sectional drawing between -A '.

FIG. 4 is a process flow showing a method for manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 5 is a cross-sectional view showing a process of forming a semiconductor chip with a protective film used in the semiconductor device according to one embodiment of the present invention.

FIG. 6 is a plan view showing a configuration of an elastomer-equipped film carrier used for manufacturing a semiconductor device.

FIG. 7 is a cross-sectional view taken along the line BB ′ of FIG. 6 of the film carrier with an elastomer used for manufacturing a semiconductor device.

FIG. 8 is a plan view showing a step of attaching a semiconductor chip of a semiconductor device according to an embodiment of the present invention.

FIG. 9 is a cross-sectional view taken along the line CC ′ of FIG. 8 illustrating a step of attaching a semiconductor chip of the semiconductor device according to the embodiment of the present invention;

FIG. 10 is a sectional view showing an inner lead connection of the semiconductor device according to one embodiment of the present invention;

FIG. 11 is a cross-sectional view illustrating resin sealing of a semiconductor device according to an embodiment of the present invention.

FIG. 12 is a plan view showing a bump forming step of the semiconductor device according to one embodiment of the present invention;

FIG. 13 is a cross-sectional view taken along the line DD ′ of FIG. 12, illustrating a bump forming step of the semiconductor device according to the embodiment of the present invention;

FIG. 14 is a schematic configuration diagram illustrating a mark forming step of the semiconductor device according to one embodiment of the present invention;

FIG. 15 is a process flow showing a method for manufacturing a semiconductor device according to another embodiment of the present invention.

FIG. 16 is a plan view showing a step of attaching a semiconductor chip of a semiconductor device according to another embodiment of the present invention.

FIG. 17 is a sectional view taken along the line EE ′ of FIG. 16 showing a step of attaching a semiconductor chip of a semiconductor device according to another embodiment of the present invention;

FIG. 18 is a cross-sectional view showing an inner lead connection of a semiconductor device according to another embodiment of the present invention.

FIG. 19 is a cross-sectional view illustrating resin sealing of a semiconductor device according to another embodiment of the present invention.

FIG. 20 is a cross-sectional view showing a bump forming step of a semiconductor device according to another embodiment of the present invention.

FIG. 21 is a sectional view illustrating a flow of forming a protective film of a semiconductor device according to another embodiment of the present invention.

FIG. 22 is a cross-sectional view showing an example when the present invention is applied to TCP.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Semiconductor device, 2 ... Semiconductor chip, 3 ... Electrode pad,
4 ... Protective film, 5 ... Mark, 6 ... Elastomer (elastic body),
7 Bump connection portion, 8 Wiring, 9 Lead, 10 Film base, 11 Bump connection hole, 12 Bump electrode (external terminal), 13 Opening, 14 Sealing portion, 15 Semiconductor wafer, 16 adhesive tape, 17 dicing line, 18 film carrier, 19 sprocket hole, 20 laser oscillator, 21 laser light, 22 reflecting mirror, 23 mask, 24 imaging lens, 25 imaging lens Coating liquid,
26 ... Dispenser,

Claims (8)

[Claims] 1. A semiconductor device having a structure in which another main surface of a semiconductor chip in which a predetermined circuit is formed on one main surface and which is formed in a substantially quadrangular plate is exposed on one main surface of the semiconductor chip. A plurality of electrode pads, a plurality of external terminals provided corresponding to each of the electrode pads, and a plurality of external terminals electrically connected to the electrode pads, a sealing portion covering the electrode pads, A semiconductor device, comprising: a protective film provided on another main surface. 2. The semiconductor device according to claim 1, further comprising a mark provided on a surface of said protective film. 3. The semiconductor device according to claim 1, wherein said protective film is made of a polyimide resin. 4. A method of manufacturing a semiconductor device having a structure in which another main surface of a semiconductor chip having a predetermined circuit formed on one main surface and having a substantially square plate shape and another main surface is exposed, Electrically connecting a plurality of electrode pads provided on the surface to a plurality of external terminals provided corresponding to the electrode pads, and forming a sealing portion covering the electrode pads of the semiconductor chip And a step of forming a protective film on another main surface of the semiconductor chip. 5. The method according to claim 4, further comprising the step of forming a mark on a protective film formed on another main surface of said semiconductor chip. 6. The method according to claim 5, wherein said mark is formed on said protective film by laser processing. 7. The step of forming a protective film on the other main surface of the semiconductor chip, the step of forming a protective film on the other main surface of the semiconductor wafer when the semiconductor chip is a semiconductor wafer, 6. The method according to claim 4, wherein a protective film is formed on another main surface of the semiconductor chip by cutting and separating the semiconductor chip for each semiconductor chip. 8. The method according to claim 4, wherein said protective film is formed of a polyimide resin.