JPH11260779A - Equipment and method for spin cleaning - Google Patents

Equipment and method for spin cleaning

Info

Publication number
JPH11260779A
JPH11260779A JP33906598A JP33906598A JPH11260779A JP H11260779 A JPH11260779 A JP H11260779A JP 33906598 A JP33906598 A JP 33906598A JP 33906598 A JP33906598 A JP 33906598A JP H11260779 A JPH11260779 A JP H11260779A
Authority
JP
Japan
Prior art keywords
substrate
nozzles
cleaning liquid
bar
cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP33906598A
Other languages
Japanese (ja)
Inventor
Tadahiro Omi
忠弘 大見
Takehisa Nitta
雄久 新田
Mitsunori Nakamori
光則 中森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ULTLA CLEAN TECHNOLOGY KAIHATS
ULTLA CLEAN TECHNOLOGY KAIHATSU KENKYUSHO KK
Original Assignee
ULTLA CLEAN TECHNOLOGY KAIHATS
ULTLA CLEAN TECHNOLOGY KAIHATSU KENKYUSHO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ULTLA CLEAN TECHNOLOGY KAIHATS, ULTLA CLEAN TECHNOLOGY KAIHATSU KENKYUSHO KK filed Critical ULTLA CLEAN TECHNOLOGY KAIHATS
Priority to JP33906598A priority Critical patent/JPH11260779A/en
Publication of JPH11260779A publication Critical patent/JPH11260779A/en
Pending legal-status Critical Current

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  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)

Abstract

PROBLEM TO BE SOLVED: To always wet the whole region of a substrate at the time of scanning with a nozzle, and make a new cleaning liquid supply system and a complex moving system unnecessary, by arranging a bar stretched from a rotating shaft and a plurality of nozzles on a line making the bar a normal or on a circular arc. SOLUTION: This spin cleaning equipment is provided with a means holding rotatably a substrate 1 to be cleaned in a cleaning tank, and nozzles 4 supplying cleaning liquid which have vibrators 3 applying vibration of ultrasonic wave or the like to the cleaning liquid. A bar stretched from a rotating shaft 2 and a plurality of the nozzles 4 are arranged on a line making the bar 3 a normal. In another case, a rectilinear bracket 8 is fixed to the bar 3, and a plurality of nozzles are installed on the fixed bracket 8. The bar 3 holding the nozzles 4 via the bracket 8 scans, and the whole region of the substrate 1 is directly irradiated with the cleaning liquid. While vibration is applied to the cleaning liquid with an ultrasonic vibration element 9 in each of the nozzles 4, the cleaning liquid is supplied to the substrate 1.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明はスピン洗浄装置及びスピ
ン洗浄方法に係り、より詳細には、半導体デバイスや液
晶ディスプレイデバイスなどを作成する工程においてデ
バイス作成用の基板(シリコウェハやガラス)を洗浄する
ためのスピン洗浄装置及びスピン洗浄方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a spin cleaning apparatus and a spin cleaning method, and more particularly, to cleaning a substrate (silicon wafer or glass) for producing a device in a process of producing a semiconductor device or a liquid crystal display device. Cleaning apparatus and a spin cleaning method for the same.

【0002】[0002]

【発明の背景】半導体基板上に形成される半導体装置は
サブミクロンのレベルに高密度化、微細化している。高
密度化を達成するためには、基板の表面は超高清浄な状
態に保たれていなければならない。すなわち、基板全域
から有機物、金属、各種パーティクル、酸化物(酸化
膜)は除去されていなければならない。そのため、基板
洗浄が行われる。
BACKGROUND OF THE INVENTION Semiconductor devices formed on semiconductor substrates are becoming denser and smaller to submicron levels. In order to achieve high densification, the surface of the substrate must be kept ultra-clean. That is, organic substances, metals, various particles, and oxides (oxide films) must be removed from the entire substrate. Therefore, substrate cleaning is performed.

【0003】基板の大口径化に伴い、従来主流であった
複数枚の基板を洗浄液を貯留した洗浄槽内に浸して洗浄
を行うバッチ式洗浄装置から、一枚の基盤を回転可能な
ホルダに搭載して基板を回転させると共に洗浄液を上か
ら垂らす枚葉式スピン洗浄装置への転換が図られてい
る。
[0003] With the increase in the diameter of the substrate, a batch type cleaning apparatus in which a plurality of substrates, which has been the mainstream in the past, is immersed in a cleaning tank storing a cleaning liquid to perform cleaning, is moved from a batch type cleaning apparatus to a rotatable holder. The conversion to a single-wafer spin cleaning apparatus in which a substrate is rotated by mounting and a cleaning liquid is dropped from above is attempted.

【0004】前者は複数枚処理のため大面積を占め、基
板の大口径化に伴い装置もさらに大型化する。リンスに
用いる純水使用量も多い。後者は装置面積が小さく純水
使用量を大幅に低減できる。クリーンルームのレイアウ
ト、ユーティリテイへの負担からも後者が望ましい。
[0004] The former occupies a large area for processing a plurality of sheets, and the apparatus is further increased in size as the diameter of the substrate increases. A large amount of pure water is used for rinsing. The latter has a small device area and can greatly reduce the amount of pure water used. The latter is desirable in view of the layout of the clean room and the burden on utilities.

【0005】スピン洗浄装置の場合、洗浄液に800k
Hz〜2MHzの周波数の振動を与えながら、基板に供
給するノズル型の超音波発生装置を用いるのが一般的で
ある。基板洗浄において微粒子除去のためには超音波を
照射し、その振動により基板上から微粒子を引き離すこ
とが必要不可欠である。ノズル型超音波発生装置は、液
噴出口の面積が小さい。
[0005] In the case of a spin cleaning device, 800 k
It is common to use a nozzle-type ultrasonic generator that supplies a substrate with vibration at a frequency of Hz to 2 MHz. In order to remove the fine particles in the cleaning of the substrate, it is indispensable to irradiate the ultrasonic waves and separate the fine particles from the substrate by the vibration. In the nozzle type ultrasonic generator, the area of the liquid ejection port is small.

【0006】微粒子除去には振動の与えられた洗浄液を
基板に作用させることが不可欠である。振動の与えられ
た洗浄液による微粒子除去能力は、滴下ポイントを中心
に数センチの広がりを持つ。該基板上に複数のノズルを
配置しスピン洗浄を行えば、ノズルを走査せずとも微粒
子は除去できる。
[0006] In order to remove fine particles, it is essential to apply a vibration-applied cleaning liquid to the substrate. The ability of the vibrated cleaning liquid to remove fine particles has a spread of several centimeters around the drop point. If a plurality of nozzles are arranged on the substrate and spin cleaning is performed, fine particles can be removed without scanning the nozzles.

【0007】しかし、均一な処理をすることはできな
い。また、隣り合ったノズルからの振動が打ち消し合
い、縞状に微粒子が残ることもある。基板全面に均一な
処理を施すには、振動の与えられた洗浄液を直接、基板
全域に照射することが重要である。そのためにノズルを
走査しなければならない。
However, uniform processing cannot be performed. Also, vibrations from adjacent nozzles may cancel each other, and fine particles may remain in stripes. In order to perform a uniform treatment on the entire surface of the substrate, it is important to directly irradiate the entire surface of the substrate with a cleaning liquid subjected to vibration. For that purpose, the nozzle must be scanned.

【0008】図6に示単一のノズルでは、基板全域を走
査するために長い時間が必要である。これは基板の大口
径化が進むとさらに顕著になる。
With the single nozzle shown in FIG. 6, it takes a long time to scan the entire substrate. This becomes more remarkable as the diameter of the substrate increases.

【0009】ノズルを保持するバーと平行に複数のノズ
ルを並べた配置(図7)にしても顕著な時間の短縮はな
い。これらには共通して、ノズルを走査すると基板中心
が乾く難点がある。ウェットプロセス中に洗浄基板全域
が乾くことは、微粒子の付着、洗浄液と基板との過剰な
反応がおき避けなければならない。
Even if a plurality of nozzles are arranged in parallel with the bar holding the nozzles (FIG. 7), there is no noticeable reduction in time. A common problem is that when the nozzle is scanned, the center of the substrate dries. Drying of the entire area of the cleaning substrate during the wet process must be avoided due to adhesion of fine particles and excessive reaction between the cleaning liquid and the substrate.

【0010】それを防止するためには、常に中心に液を
供給するノズルを設ける必要がある(図8)。しかし新た
な機構、具体的には洗浄液供給系、それを保持する系が
必要となる。また、ともに中心部に洗浄液を供給したい
ので交錯する。また洗浄装置内特に基板上面に物体、特
に可動部が多いことは好ましくない。
In order to prevent this, it is necessary to always provide a nozzle for supplying the liquid to the center (FIG. 8). However, a new mechanism, specifically, a cleaning liquid supply system and a system for holding the same are required. In addition, they both cross because they want to supply the cleaning liquid to the center. Further, it is not preferable that there are many objects, especially movable parts, in the cleaning apparatus, especially on the upper surface of the substrate.

【0011】ノズルを回転軸から延ばされたバーと平行
に走査すれば基板全域は乾かないが、回転かつ平行走査
できる複雑な可動系が必要である(図9)。この場合、バ
ーを引いた場合の空間が必要になり、装置面積が大きく
なり、好ましくない。本発明は基板全域に振動の与えら
れた洗浄液を、直接に照射するスピン洗浄方法及びスピ
ン洗浄装置を提供することを目的とする。
If the nozzle is scanned in parallel with the bar extended from the rotation axis, the entire substrate is not dried, but a complicated movable system capable of rotating and scanning in parallel is required (FIG. 9). In this case, a space is required when the bar is pulled, which increases the area of the apparatus, which is not preferable. SUMMARY OF THE INVENTION It is an object of the present invention to provide a spin cleaning method and a spin cleaning apparatus for directly irradiating a cleaning liquid having a vibration applied to the entire substrate.

【0012】[0012]

【発明が解決しようとする課題】本発明は、ノズルを走
査する場合に基板全域が常に濡れているために、新たな
洗浄液供給系を必要とせず、複雑な可動系も必要としな
いスピン洗浄装置及びスピン洗浄方法を提供することを
課題とする。
SUMMARY OF THE INVENTION The present invention provides a spin cleaning apparatus which does not require a new cleaning liquid supply system and does not require a complicated movable system because the entire area of the substrate is always wet when scanning the nozzle. And a spin cleaning method.

【0013】[0013]

【課題を解決するための手段】本発明のスピン洗浄装置
は、洗浄槽内に洗浄すべき基板を回転可能に保持する手
段と、洗浄液を供給するノズルを有して、該洗浄液に超
音波などの振動を与える振動子が設けられているノズル
を持つスピン洗浄装置において、回転軸からのばされた
バーと、該バーを法線とする直線ないし円弧上に複数の
ノズルが並んでいることを特徴とする。
A spin cleaning apparatus according to the present invention comprises means for rotatably holding a substrate to be cleaned in a cleaning tank, and a nozzle for supplying a cleaning liquid. In a spin cleaning apparatus having a nozzle provided with a vibrator for providing a vibration, a bar extended from a rotation axis and a plurality of nozzles are arranged on a straight line or an arc having the bar as a normal line. Features.

【0014】本発明のスピン洗浄方法は、洗浄槽内に洗
浄すべき基板を回転可能に保持する手段と、洗浄液を供
給するノズルを有して、該洗浄液に超音波などの振動を
与える振動子が設けられているノズルを持り、回転軸か
らのばされたバーと、該バーを法線とする直線ないし円
上に複数のノズルが並んでいるスピン洗浄装置におい
て、複数のノズル間のノズルピッチ幅だけ、ノズルを走
査することにより基板全域に振動の与えられた洗浄液を
直接照射することを特徴とする。
A spin cleaning method according to the present invention includes a vibrator having means for rotatably holding a substrate to be cleaned in a cleaning tank and a nozzle for supplying a cleaning liquid, and applying vibration such as ultrasonic waves to the cleaning liquid. In a spin cleaning apparatus having a nozzle provided with a plurality of nozzles arranged in a straight line or a circle having a bar extending from a rotation axis and a bar extending from the rotation axis, a nozzle between the plurality of nozzles is provided. It is characterized in that the entire area of the substrate is directly irradiated with the vibrated cleaning liquid by scanning the nozzles by the pitch width.

【0015】[0015]

【発明の実施の形態】(形態例1)図1、図2及び図3
に本発明の実施形態を示す。
(Embodiment 1) FIGS. 1, 2 and 3
1 shows an embodiment of the present invention.

【0016】本形態では、洗浄槽(図示せず)に洗浄す
べき基板1を回転可能に保持する手段(図示せず)と、
洗浄液を供給するノズル4を有して、洗浄液に超音波な
どの振動を与える振動子3が設けられているノズル4を
持つスピン洗浄装置において、回転軸2からのばされた
バー3と、バー3を法線とする直線に複数のノズル4が
並んでいる。図1、図2に示す例では、バー3に直線状
のブラケット8を固定しブラケット8に複数のノズルを
取り付けてある。
In this embodiment, means (not shown) for rotatably holding a substrate 1 to be cleaned in a cleaning tank (not shown);
In a spin cleaning apparatus having a nozzle 4 having a nozzle 4 for supplying a cleaning liquid and a vibrator 3 for applying vibration such as ultrasonic waves to the cleaning liquid, a bar 3 extended from a rotating shaft 2, A plurality of nozzles 4 are arranged in a straight line with 3 as a normal line. In the example shown in FIGS. 1 and 2, a linear bracket 8 is fixed to the bar 3, and a plurality of nozzles are attached to the bracket 8.

【0017】以下より詳細に説明する。まず、四角形の
ガラス基板や石英基板あるいは円形のシリコンウェハな
どを洗浄槽内の基板ホルダー上に固定する。
This will be described in more detail below. First, a square glass substrate, a quartz substrate, a circular silicon wafer, or the like is fixed on a substrate holder in a cleaning tank.

【0018】必要に応じて、洗浄槽内を減圧して、高純
度窒素を供給して槽内をパージする。基板1を回転させ
て、洗浄液をノズル4より噴射する。このときの回転速
度は好ましくは500〜1500rpmである。
If necessary, the pressure in the cleaning tank is reduced, and high-purity nitrogen is supplied to purge the tank. The substrate 1 is rotated, and the cleaning liquid is ejected from the nozzle 4. The rotation speed at this time is preferably 500 to 1500 rpm.

【0019】各ノズル4内に設けられている超音波振動
素子9により洗浄液に800kHzから2MHzの周波
数の振動を与えながら基板4に洗浄液供給する。ブラケ
ット8を介してノズル4を保持するバー3を走査して基
板1全域に洗浄液を直接に照射する。この際、走査量
(すなわちバー3の移動量)はノズル4同士のピッチ幅
lだけ行えばよい。洗浄液の供給量は600〜1500
cc/分とすることが好ましい。
The cleaning liquid is supplied to the substrate 4 while applying a vibration of a frequency of 800 kHz to 2 MHz to the cleaning liquid by the ultrasonic vibration element 9 provided in each nozzle 4. The bar 3 holding the nozzle 4 is scanned through the bracket 8 to directly irradiate the entire surface of the substrate 1 with the cleaning liquid. At this time, the scanning amount (that is, the moving amount of the bar 3) may be adjusted by the pitch width 1 between the nozzles 4. The supply amount of the cleaning liquid is 600 to 1500
It is preferably set to cc / min.

【0020】本発明に用いられる洗浄液としては、純
水、超純水、オゾン添加超純水、フッ化水素酸、過酸化
水素水、水酸化アンモニウム、硫酸、塩酸、イソプロピ
ルアルコール等から選択された少なくとも1つや、これ
らから選択される少なくとも2つの混合液が挙げられ
る。
The washing liquid used in the present invention is selected from pure water, ultrapure water, ozone-added ultrapure water, hydrofluoric acid, aqueous hydrogen peroxide, ammonium hydroxide, sulfuric acid, hydrochloric acid, isopropyl alcohol and the like. At least one or at least two mixed liquids selected from these are exemplified.

【0021】また、いくつかの洗浄液による洗浄工程を
時系列に行ってもよい。必要に応じて乾燥窒素を洗浄し
た基板に吹き付け基板を乾燥させる。
Further, the washing steps with some washing liquids may be performed in a time series. If necessary, dry nitrogen is sprayed onto the washed substrate to dry the substrate.

【0022】本発明に用いられる洗浄液としては、オゾ
ンを添加した純水、フッ酸と過酸化水素水と純水の混合
液などがある。
The cleaning liquid used in the present invention includes pure water to which ozone has been added, and a mixed liquid of hydrofluoric acid, hydrogen peroxide and pure water.

【0023】より好ましくは、オゾン添加純水、フッ
酸、過酸化水素水、界面活性剤、純水を用意して、オゾ
ン添加純水での洗浄工程、フッ酸と過酸化水素水と界面
活性剤を含む純水での洗浄工程と、オゾン添加純水での
洗浄工程と、希釈フッ酸での洗浄工程と、純水での洗浄
工程とを順次行えるようにするとよい。この洗浄方法は
室温であっても効果的であり、従来のRCA洗浄のよう
に100℃前後に加熱する必要がない。
More preferably, ozone-added pure water, hydrofluoric acid, hydrogen peroxide solution, a surfactant, and pure water are prepared, and a washing step with ozone-added pure water is performed. It is preferable that a washing step with pure water containing an agent, a washing step with ozone-added pure water, a washing step with diluted hydrofluoric acid, and a washing step with pure water can be sequentially performed. This cleaning method is effective even at room temperature, and does not need to be heated to about 100 ° C. unlike the conventional RCA cleaning.

【0024】(形態例2)図4に他の実施形態を示す。
図1に示すブラケット8は直線状のものを用いたが、本
例では円弧上のブラケットを用いた。ここでいう円弧に
は円、楕円、双曲線、放物線を含む。他の点は形態例1
と同様である。
(Embodiment 2) FIG. 4 shows another embodiment.
The bracket 8 shown in FIG. 1 is a straight bracket, but in this example, a bracket on an arc is used. Here, the arc includes a circle, an ellipse, a hyperbola, and a parabola. Other points are form example 1.
Is the same as

【0025】(形態例3)図5に他の形態例を示す。図
4に示す例はブラケット8は回転軸2側にその中心を持
つ円弧の形状であったが、本例では、回転軸2と反対側
にその中心を持つ円弧の形状である。他の点は形態例1
と同様である。
(Embodiment 3) FIG. 5 shows another embodiment. In the example shown in FIG. 4, the bracket 8 has an arc shape having its center on the rotation shaft 2 side, but in this example, the bracket 8 has an arc shape having its center on the opposite side to the rotation shaft 2. Other points are form example 1.
Is the same as

【0026】[0026]

【実施例】本例では、図1に示すスピン洗浄装置を用い
て8インチサイズのシリコンウェハを洗浄した実施例で
ある。
EXAMPLE In this example, an 8-inch silicon wafer was cleaned using the spin cleaning apparatus shown in FIG.

【0027】洗浄はスピン洗浄法により行った。基板全
域をアルミナ粒子で汚染した。
Washing was performed by a spin washing method. The entire substrate was contaminated with alumina particles.

【0028】このシリコン基板を1.5MHzの周波数
の振動を与えながら、0.5%HFと、0.5%H22
と50ppmの界面活性剤とを含有する超純水による洗
浄を8秒,16秒,24秒,32秒行った。そのときノ
ズルを走査して基板全域に振動を与えられた洗浄液を直
接に照射した。その後、超純水によるリンスを16秒行っ
た。
The silicon substrate is subjected to a vibration of a frequency of 1.5 MHz while applying 0.5% HF and 0.5% H 2 O 2.
Washing with ultrapure water containing and 50 ppm of a surfactant was performed for 8 seconds, 16 seconds, 24 seconds, and 32 seconds. At that time, the nozzle was scanned and the entire area of the substrate was directly irradiated with the vibrated cleaning liquid. Thereafter, rinsing with ultrapure water was performed for 16 seconds.

【0029】従来例1として、図1の形態のノズルを走
査した場合、実施例として、図6の形態のノズルを使用
した場合で行った。
As a conventional example 1, scanning was performed with the nozzle of the form shown in FIG. 1, and as an example, the scanning was performed with the nozzle of the form shown in FIG.

【0030】このときの回転数は1000rpmであっ
た。洗浄後の基板上の微粒子数を表面異物検査機で測定
し、微粒子除去率を計算した結果を表1に示す。評価微
粒子径は0.20μm以上である。
The rotation speed at this time was 1000 rpm. The number of fine particles on the substrate after cleaning was measured by a surface foreign matter inspection device, and the result of calculating the fine particle removal rate is shown in Table 1. The evaluation fine particle diameter is 0.20 μm or more.

【0031】[0031]

【表1】 従来例では十分な除去に32秒もの長い時間が必要であ
る。実施例では16秒までに十分除去できていた。
[Table 1] In the conventional example, a long time as long as 32 seconds is required for sufficient removal. In the example, the removal was sufficient by 16 seconds.

【0032】[0032]

【発明の効果】本発明の効果は以下の通りである。他の
ノズルを使用して同等の洗浄能力と比べて、 単一のノズルを走査した場合より洗浄時間が早い。 単一のノズル、複数のノズルをバーと平行に設け走
査した場合と違い、基板中心が乾かない。
The effects of the present invention are as follows. Cleaning time is faster than scanning a single nozzle compared to equivalent cleaning performance using other nozzles. Unlike the case where a single nozzle and a plurality of nozzles are provided in parallel with the bar and scanning is performed, the center of the substrate does not dry.

【0033】 基板中心が乾かないための洗浄液供給
系、それを保持する系を新たに設ける必要がない。 基板中心が乾かないために複雑な可動系を設ける必
要がない。
There is no need to newly provide a cleaning liquid supply system for keeping the center of the substrate from drying out and a system for holding the same. Since the center of the substrate does not dry, there is no need to provide a complicated movable system.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施の形態1に係り、回転軸からのば
されたバーと直角な直線上に並んでいる複数のノズルを
回転走査した状態を示す平面図である。
FIG. 1 is a plan view showing a state in which a plurality of nozzles arranged on a straight line perpendicular to a bar extended from a rotation axis are rotated and scanned according to Embodiment 1 of the present invention.

【図2】複数の超音波ジェットノズルから洗浄液が噴出
している状態を示す斜視図である。
FIG. 2 is a perspective view showing a state in which a cleaning liquid is jetted from a plurality of ultrasonic jet nozzles.

【図3】超音波ジェットノズルの斜視図である。FIG. 3 is a perspective view of an ultrasonic jet nozzle.

【図4】本発明の実施の形態例2に係り、回転軸側に中
心がある円弧上に並んでいる複数のノズルを回転走査し
た状態を示す平面図である。
FIG. 4 is a plan view showing a state in which a plurality of nozzles arranged in an arc having a center on the rotation axis side are rotationally scanned according to the second embodiment of the present invention.

【図5】本発明の実施の形態例3に係り、回転軸と反対
側に中心がある円弧上に並んでいる複数のノズルを回転
走査した状態を示す平面図である。
FIG. 5 is a plan view showing a state in which a plurality of nozzles arranged on an arc whose center is on the opposite side to the rotation axis are rotationally scanned according to the third embodiment of the present invention.

【図6】従来例に係り、単一のノズルを回転走査した状
態を示す平面図である。
FIG. 6 is a plan view showing a state in which a single nozzle is rotationally scanned according to a conventional example.

【図7】従来例に係り、回転軸から延ばされたバーと平
行に複数設けているノズルを回転走査した状態を示す平
面図である。
FIG. 7 is a plan view showing a state in which a plurality of nozzles provided in parallel with a bar extending from a rotation axis are rotationally scanned according to a conventional example.

【図8】従来例に係り、基板中心に常に洗浄液を供給す
るための機構が付いている状態を示す平面図である。
FIG. 8 is a plan view showing a state in which a mechanism for constantly supplying a cleaning liquid to the center of a substrate is provided according to a conventional example.

【図9】従来例に係り、回転軸から延ばされたバーと平
行に複数設けているノズルを平行走査した状態を示す平
面図である。
FIG. 9 is a plan view showing a state in which a plurality of nozzles provided in parallel with a bar extending from a rotation axis are scanned in parallel according to a conventional example.

【符号の説明】[Explanation of symbols]

1 被洗浄基板、 2 走査するための回転軸、 3 ノズルを保持するバー、 4 ノズル、 5 常に基板中心に洗浄液を垂らすための配管、 6 配管を保持するバー、 7 バーを保持する台、 8 ノズルを取り付けるブラケット、 9 超音波振動素子。 Reference Signs List 1 substrate to be cleaned, 2 rotating shaft for scanning, 3 bar for holding nozzle, 4 nozzle, 5 pipe for always dropping cleaning liquid at the center of substrate, 6 bar for holding pipe, 7 table for holding bar, 8 Bracket for mounting nozzle, 9 Ultrasonic vibration element.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 新田 雄久 東京都文京区本郷4丁目1番4号株式会社 ウルトラクリーンテクノロジー開発研究所 内 (72)発明者 中森 光則 宮城県仙台市青葉区荒巻字青葉(無番地) 東北大学内 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Yuhisa Nitta 4-1-1 Hongo, Bunkyo-ku, Tokyo Ultra Clean Technology Development Laboratory Co., Ltd. (72) Inventor Mitsunori Nakamori Aramaki Aoba-ku, Aoba-ku, Sendai, Miyagi Prefecture Aoba (unnumbered) Tohoku University

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 洗浄槽内に洗浄すべき基板を回転可能に
保持する手段と、洗浄液を供給するノズルを有して、該
洗浄液に超音波などの振動を与える振動子が設けられて
いるノズルを持つスピン洗浄装置において、 回転軸からのばされたバーと、該バーを法線とする直線
ないし円弧上に複数のノズルが並んでいることを特徴と
するスピン洗浄装置。
1. A nozzle having means for rotatably holding a substrate to be cleaned in a cleaning tank and a vibrator having a nozzle for supplying a cleaning liquid and applying vibration such as ultrasonic waves to the cleaning liquid. A spin cleaning device comprising: a bar extended from a rotation axis; and a plurality of nozzles arranged on a straight line or an arc having the bar as a normal line.
【請求項2】 請求項1記載のスピン洗浄装置におい
て、複数のノズル間のノズルピッチ幅だけ、ノズルを走
査することにより基板全域に振動の与えられた洗浄液を
直接照射することを特徴とするスピン洗浄方法。
2. A spin cleaning apparatus according to claim 1, wherein the entire area of the substrate is directly irradiated with a cleaning liquid having a vibration by scanning the nozzles by a nozzle pitch width between a plurality of nozzles. Cleaning method.
JP33906598A 1997-12-02 1998-11-30 Equipment and method for spin cleaning Pending JPH11260779A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33906598A JPH11260779A (en) 1997-12-02 1998-11-30 Equipment and method for spin cleaning

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP33195097 1997-12-02
JP9-331950 1997-12-02
JP33906598A JPH11260779A (en) 1997-12-02 1998-11-30 Equipment and method for spin cleaning

Publications (1)

Publication Number Publication Date
JPH11260779A true JPH11260779A (en) 1999-09-24

Family

ID=26574022

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33906598A Pending JPH11260779A (en) 1997-12-02 1998-11-30 Equipment and method for spin cleaning

Country Status (1)

Country Link
JP (1) JPH11260779A (en)

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US7494549B2 (en) 2002-08-16 2009-02-24 Dainippon Screen Mfg. Co., Ltd. Substrate treatment apparatus and substrate treatment method
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