JPH11259810A - Thin film magnetic head and its formation - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a thin film magnetic head excellent in high frequency characteristics and reproduced output characteristics and capable of easily controlling the magnetic anisotropy of an FeMN or FeMNO magnetic alloy layer and to provided formation method capable of reducing the number of the manufacture processes. SOLUTION: In this thin film magnetic head, a magnetic circuit is constructed by the two kinds of a first magnetic layer (lower magnetic layer 22 or upper magnetic layer 32) and a second magnetic layer (intermediate lower magnetic layer 24 or intermediate upper magnetic layer 28). The first magnetic layer is formed of a CoNbZr layer for instance and the second magnetic layer is formed of the FeMN or FeMNO magnetic alloy layer. To the second magnetic layer, the magnetic anisotropy equivalent to the first magnetic layer is imparted by a magnetic action by the magnetic anisotropy imparted to the first magnetic layer. The imparting of the magnetic anisotropy to the first magnetic layer and the imparting of the magnetic anisotropy to the second magnetic layer by the magnetic action are performed by heat treatment in the same fixed magnetic field.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a thin film magnetic head and a method of forming the same, and more particularly, to a thin film magnetic head having a structure in which different types of magnetic layers are stacked and a method of forming the same. More specifically, the present invention provides an amorphous magnetic alloy layer,
The present invention relates to a thin-film magnetic head for constructing a magnetic path by superposing each of FeN-based soft magnetic layers and a method of forming the same.

[0002]

2. Description of the Related Art Conventionally, in a thin film magnetic head incorporated in a magnetic recording / reproducing apparatus such as a digital video tape recorder (VTR) and a hard disk (HDD), a permalloy alloy (NiFe) layer is used as a magnetic layer for constructing a magnetic path. It was common to do. The permalloy alloy layer is formed by a plating method.

[0003] With the recent increase in the density of magnetic recording, the coercive force of a magnetic recording medium is increased, and a magnetic material such as a Co-based amorphous alloy or a FeN-based alloy is used for a magnetic layer of a thin-film magnetic head. There is a tendency. A plating method is not used for forming these magnetic materials, and these magnetic materials are usually formed by sputtering. The formed magnetic layer is patterned into a predetermined planar shape. A resist mask formed by a photolithography technique is used for patterning, and patterning is performed by ion beam etching using the resist mask.

When a permalloy alloy layer is used for a magnetic layer, an organic material is generally used as an insulating material used for a thin-film magnetic head. However, due to the use of a magnetic material such as a Co-based amorphous alloy or a FeN-based alloy, an inorganic material such as SiO ₂ or Al ₂ O ₃ is used as the insulating material. In order to obtain good magnetic properties, a magnetic layer is formed while heating the substrate, and finally the magnetic layer is subjected to a heat treatment at 400 to 600 ° C. The heat resistance temperature of the inorganic material is high, and the insulation performance of the inorganic material is not impaired by this degree of heat treatment.

A method for manufacturing a thin-film magnetic head according to the prior art will be described below. FIG. 11 to FIG. 15 are views of a thin-film magnetic head shown for each manufacturing step for explaining a manufacturing method according to the conventional technique. 11A is a cross-sectional view, FIG. 11B is a plan view, FIG. 12 is a cross-sectional view, FIG.
14B is a plan view, FIG. 14A is a sectional view, FIG. 14B is a plan view, and FIG. 15 is a sectional view.

(1) As shown in FIGS. 11A and 11B, a lower magnetic layer 3 is formed on a non-magnetic substrate 1 with an insulating layer 2 interposed therebetween. After being formed by sputtering, the lower magnetic layer 3 is patterned by ion beam etching. A resist mask formed by a photolithography technique is used for patterning. After the patterning is completed, the resist mask is removed.

(2) As shown in FIG. 12, an insulating layer 4 is formed around the lower magnetic layer 3. Insulating layer 4 is formed of the SiO ₂ layer which is deposited by for example sputtering, the flattening polishing process to expose the surface of the lower magnetic layer 3 in the SiO ₂ layer is performed.

(3) As shown in FIGS. 13A and 13B, an intermediate magnetic layer (intermediate core) 5 is formed on the lower magnetic layer 3, and an insulating layer is provided around the intermediate magnetic layer 5. 6 is formed. As with the lower magnetic layer 3, the intermediate magnetic layer 5 is patterned by ion beam etching after being formed by sputtering. After the insulating layer 6 is deposited by sputtering, a flattening polishing process is performed until the surface of the intermediate magnetic layer 5 is exposed.

(4) As shown in FIGS. 14 (A) and 14 (B), a coil burying groove 7 is formed around the intermediate magnetic layer 5 on the right side in the figure, and the inside of the coil burying groove 7 is formed. The conductive coil 8 is buried. The coil embedding groove 7 is formed by reactive ion etching (RIE), and the conductive coil 8 is formed of, for example, a Cu layer.

(5) A magnetic gap layer 9 on the intermediate magnetic layer 5
Is formed (see FIG. 15). The magnetic gap layer 9 is formed of, for example, an SiO ₂ layer deposited by sputtering.

(6) As shown in FIG. 15, an upper magnetic layer 10 is formed on the magnetic gap layer 9 on the left side (magnetic recording medium side) and on the intermediate magnetic layer 5 on the right side in the figure. An insulating layer 11 is formed around the magnetic layer 10. Each of the upper magnetic layer 10 and the insulating layer 11 is formed in the same manner as each of the lower magnetic layer 3 and the insulating layer 4 described above.

When these series of manufacturing steps are completed, a thin film magnetic head having excellent high frequency characteristics and high recording density is completed. In the thin-film magnetic head, a magnetic circuit is constructed by a magnetic path formed by the lower magnetic layer 3, the intermediate magnetic layer 5, and the upper magnetic layer 10, and the conductive coil 8 wound around a part of the magnetic path. The thin-film magnetic head records magnetic information on a magnetic recording medium and reproduces the magnetic information recorded on the magnetic recording medium.

[0013]

In the above-mentioned thin-film magnetic head, no consideration is given to the following points.
It is known that the magnetic anisotropy of each magnetic layer is strengthened in order to obtain good reproduction output characteristics in a thin film magnetic head. However, the track portion, that is, the plane size of the intermediate magnetic layer 5 is smaller than the plane size of each of the other lower magnetic layer 3 and upper magnetic layer 10, and the influence of the demagnetizing field is large. Therefore, it is necessary to provide the intermediate magnetic layer 5 with a strong magnetic anisotropy that does not change the magnetic anisotropy.

Although it is not a publicly known technique, according to basic research conducted by the present inventors, FeMN (M
Is at least one or more elements selected from metals or semi-metals other than Fe) in the magnetic alloy layer by controlling the substrate temperature at the time of film formation by sputtering, so that a desired magnetic anisotropy can be obtained without heat treatment in a magnetic field. It was clarified that the property was obtained and the strength of the anisotropic magnetic field could be controlled. Further, in the FeMNO magnetic alloy layer, a desired magnetic anisotropy can be obtained without performing a heat treatment in a magnetic field by adjusting a supply amount of a composition element such as oxygen at the time of sputtering film formation. It became clear that the strength of the sphere could be controlled.

[0015] FeMN on a smooth substrate having a relatively large area
When forming a magnetic alloy layer or a FeMNO magnetic alloy layer, as described above, the magnetic anisotropy can be controlled by adjusting the substrate temperature and adjusting the supply of the constituent elements. However, the intermediate magnetic layer 5
In a very small planar shape like
When the MN magnetic alloy layer or the FeMNO magnetic alloy layer is formed, there is a new problem that it is difficult to control the magnetic anisotropy of the FeMN magnetic alloy layer or the FeMNO magnetic alloy layer.

The present invention has been made to solve the above problems. Therefore, an object of the present invention is to provide a thin-film magnetic head which can easily control the magnetic anisotropy of the FeMN magnetic alloy layer or the FeMNO magnetic alloy layer, and has excellent high frequency characteristics and excellent recording / reproducing output characteristics. .

It is a further object of the present invention to provide a method of forming a thin film magnetic head which achieves the above object and can reduce the number of manufacturing steps of the thin film magnetic head.

[0018]

In order to solve the above-mentioned problems, the present invention provides a thin-film magnetic head, comprising: a first magnetic layer provided with magnetic anisotropy; A second magnetic layer controlled to have substantially the same magnetic anisotropy as the first magnetic layer by a magnetic action from the magnetic layer.

The first magnetic layer and the second magnetic layer both form a magnetic path. The first magnetic layer and the second magnetic layer are directly connected, and the first magnetic layer and the second magnetic layer are joined via a non-magnetic layer, specifically, a magnetic gap layer.

The first magnetic layer is preferably an amorphous magnetic alloy layer. The second magnetic layer is preferably a soft magnetic film containing Fe, M, and N as constituent elements, or containing Fe, M, N, and O as constituent elements. Further, the second magnetic layer is preferably a magnetic alloy layer having induced magnetic anisotropy.

In the thin-film magnetic head thus configured, the first magnetic layer provided with magnetic anisotropy can always provide stable magnetic anisotropy to the second magnetic layer. The characteristics can be improved.

Further, according to the present invention, there is provided a method for forming a thin-film magnetic head, comprising the steps of: forming a first magnetic layer on a non-magnetic substrate;
A step of superposing and forming a second magnetic layer different in type from the magnetic layer, performing a heat treatment in a magnetic field to impart magnetic anisotropy to the first magnetic layer, and heat treating the second magnetic layer in the same magnetic field. The first layer is formed by the magnetic action from the first magnetic layer.
A step of giving substantially the same magnetic anisotropy as the magnetic layer;
It is characterized by having.

In the method of forming a thin-film magnetic head having the above-described structure, the step of imparting magnetic anisotropy to the first magnetic layer by the heat treatment in a magnetic field includes the step of providing the second magnetic layer with the same magnetic properties as the first magnetic layer. Magnetic anisotropy can be imparted. Therefore, the number of manufacturing steps of the thin-film magnetic head can be reduced by an amount corresponding to the step of providing magnetic anisotropy to the second magnetic layer.

[0024]

Embodiments of the present invention will be described below with reference to the drawings.

(First Embodiment) FIG. 1 shows a first embodiment of the present invention.
FIG. 3 is a longitudinal sectional structural view of a thin-film magnetic head for performing recording and reproduction incorporated in the magnetic recording and reproducing apparatus according to the embodiment. The thin-film magnetic head includes a lower magnetic layer (lower core) 22, an intermediate lower magnetic layer (intermediate lower core) 24, a magnetic gap layer 27, an intermediate upper magnetic layer (intermediate upper core) 28, an upper magnetic layer (Upper core) 32 and conductive coils 26 and 30 are provided.

The thin-film magnetic head according to the present embodiment is incorporated in a video tape recorder, and a non-magnetic substrate 20, for example, a CaTiO ₃ substrate is used.

The lower magnetic layer 22 is formed on the surface of the non-magnetic substrate 20 via the insulating layer 21. The insulating layer 21 is formed of an inorganic material such as a SiO ₂ layer or an Al ₂ O ₃ layer. The lower magnetic layer 22 is formed of an amorphous magnetic alloy layer, specifically, a CoNbZr layer.
The magnetic anisotropy of a Co-based magnetic material including a CoNbZr layer can be easily controlled by applying a magnetic field during the heat treatment.

The lower intermediate magnetic layer 24 is formed on the lower magnetic layer 22, and the upper intermediate magnetic layer 28 is formed on the lower intermediate magnetic layer 24. The intermediate lower magnetic layer 24 and the upper intermediate magnetic layer 28 are each made of a soft material containing Fe (iron), Si (silicon), Mo (molybdenum), N (nitrogen), and O (oxygen) having high saturation magnetic flux density. It is formed of a magnetic material. In addition, the intermediate lower magnetic layer 2
4. The upper intermediate magnetic layer 28 may be formed of a soft magnetic material containing Fe, Si, Mo and N each having a high saturation magnetic flux density as a composition element. In the soft magnetic film forming each of the intermediate lower magnetic layer 24 and the intermediate upper magnetic layer 28, the lower magnetic layer 22 or the upper magnetic layer Magnetic anisotropy equivalent to that of the upper magnetic layer 32 is provided. That is, the intermediate lower magnetic layer 2
4. The magnetic anisotropy of the intermediate upper magnetic layer 28 is controlled by the magnetic action from the lower magnetic layer 22 or the upper magnetic layer 32.

The upper magnetic layer 32 is formed on the intermediate upper magnetic layer 28. The upper magnetic layer 32 is made of Co, like the lower magnetic layer 22 described above.
It is formed of an NbZr layer.

The magnetic gap layer 27 is provided on the side of the magnetic recording medium (not shown) (the left side in FIG. 1).
And the upper intermediate magnetic layer 28. On the side opposite to the magnetic recording medium side (the right side in FIG. 1), the intermediate lower magnetic layer 2
4 and the upper intermediate magnetic layer 28 are magnetically connected. Each of the conductive coils 26 and 30 is connected to the intermediate lower magnetic layer 2.
4 and the upper intermediate magnetic layer 28 are disposed around the connection portion. The magnetic gap layer 27 is formed of an inorganic material such as an SiO ₂ layer or an Al ₂ O ₃ layer. Each of the conductive coils 26 and 30 is laminated, and at least a portion is electrically connected between the conductive coil 26 and the conductive coil 30. Each of the conductive coils 26 and 30 is formed of, for example, a Cu layer.

An insulating layer 23 is formed around the lower magnetic layer 22, an insulating layer 25 is formed around the intermediate lower magnetic layer 24, and an insulating layer 29 is formed around the upper intermediate magnetic layer 28. An insulating layer 33 is formed around the upper magnetic layer 32.
The insulating layer 31 is formed on the insulating layer 29. Insulating layer 23,
25, 29, 31, and 33 are, for example, SiO ₂ layers or Al, respectively.
It is formed of an inorganic material such as a ₂ O ₃ layer.

The thin-film magnetic head thus configured is
Lower magnetic layer 22, intermediate lower magnetic layer 24, magnetic gap layer 2
7. A magnetic circuit is constructed by the magnetic path formed by the intermediate upper magnetic layer 28 and the upper magnetic layer 32 and the conductive coils 26 and 30. The thin-film magnetic head performs magnetic recording of information on a magnetic recording medium and reproduces information magnetically recorded on the magnetic recording medium.

Next, a magnetic interaction in which one magnetic material magnetically affects another type of magnetic material will be described. 2 (A) and 2 (B) are plan views of a main part of a sample prepared for explaining magnetic interaction. In the sample shown in FIG. 2A, a CoNbZr layer 22S and a FeSiN layer 24S are sequentially stacked on the entire surface of the nonmagnetic substrate 20S. The CoNbZr layer 22S is a magnetic layer corresponding to the lower magnetic layer 22 (or the upper magnetic layer 32). The FeSiN layer 24S is a magnetic layer corresponding to the lower intermediate magnetic layer 24 (or upper intermediate magnetic layer 28). The sample size (plane size of the magnetic layer) is 10mm
× 10 mm. The thickness of the CoNbZr layer 22S is 1 μm, and the thickness of the FeSiN layer 24S is 1 μm.

The sample shown in FIG.
CoNbZr layer 22S and FeSiN layer 24S on a part of the surface of S
Are arranged at regular intervals. The size of the sample (the plane dimension of the magnetic layer) is 50 μm × 50 μm. The composite magnetic layer with a fine shape
Co on the non-magnetic substrate 20S by sputtering
After sequentially laminating the NbZr layer 22S and the FeSiN layer 24S, the CoNbZr layer 22S and the FeSiN layer 24 are subjected to ion beam etching using a mask formed by photolithography.
It is formed by patterning each of S. As in the sample shown in FIG. 2A, the CoNbZr layer 22S,
Each film thickness of the FeSiN layer 24S is 1 μm.

FIGS. 3 and 4 are diagrams showing the results of measuring the magnetic properties of the above-described samples. Each figure shows the magnetic permeability μ of each magnetic layer when no heat treatment was performed (no) and when heat treatment was performed (present). The heat-treated sample is a sample having a temperature of 420 when a fixed magnetic field of about 10 kG is applied in the direction A or the direction B in FIG. 2A or 2B.
This is a sample that has been subjected to a heat treatment of 10 ° C. for 10 minutes. Permeability μ
Is a value calculated as a film thickness of 2 μm. CoNbZr layer 22
In the composite magnetic layer in which the FeSiN layer 24S is superposed on the S, the magnetic permeability μ is determined by the magnetic permeability of the CoNbZr layer 22S and the FeSiN layer 24S.
It is calculated as an average value of S and the magnetic permeability. FIG. 2 (A),
The magnetic permeability μ in the direction A shown in FIG. 2B is shown on the left side of the hyphen, and the magnetic permeability μ in the direction B is shown on the right side of the hyphen.

As shown in FIGS. 3 and 4, FeS film formed by sputtering at a substrate temperature of 170 ° C. (film forming condition 1)
No clear magnetic anisotropy can be confirmed in the iN layer 24S before the heat treatment in the fixed magnetic field. When heat treatment is performed in a fixed magnetic field,
FeSi so that the direction of application of the fixed magnetic field is in the easy axis direction.
The N layer 24S is given magnetic anisotropy. CoNbZr layer 22
Similarly, when heat treatment is performed in a fixed magnetic field, S is given magnetic anisotropy so that the direction of application of the fixed magnetic field is in the direction of the axis of easy magnetization. These characteristics can be known from the values of the magnetic permeability μ of the FeSiN layer 24S and the CoNbZr layer 22S in a sample of 10 mm × 10 mm size.

50 μm × 50 μm as a composite magnetic layer having a fine shape
In the sample having the size, the magnetic permeability μ of the CoNbZr layer 22S after the heat treatment in the fixed magnetic field is substantially equal to the sample having the size of 10 mm × 10 mm. However, when the shape becomes fine, the FeSiN layer 24S
Can no longer confirm a clear magnetic anisotropy, and the FeSiN layer 24
The magnetic permeability μ of S also decreases.

However, the FeSiN layer is formed on the CoNbZr layer 22S.
The composite magnetic layer obtained by superimposing the layers 24S has a magnetic permeability μ obtained by averaging the magnetic permeability μ of the CoNbZr layer 22S and the magnetic permeability μ of the FeSiN layer 24S before and after the heat treatment in the fixed magnetic field. The magnetic anisotropy is given to the FeSiN layer 24S in accordance with the magnetic anisotropy given to the CoNbZr layer 22S. This phenomenon becomes remarkable by performing heat treatment in a fixed magnetic field, and even in a sample having a size of 50 μm × 50 μm, the magnetic anisotropy is given to the FeSiN layer 24S in accordance with the magnetic anisotropy given to the CoNbZr layer 22S. . Further, as shown in FIGS. 3 and 4, a similar tendency can be confirmed even when the application direction of the fixed magnetic field is changed in the heat treatment in the fixed magnetic field. That is, the CoNbZr layer 22S and the FeSiN layer 2
When each of the 4S is superimposed, the magnetic anisotropy of the FeSiN layer 24S is controlled by the magnetic action due to the magnetic anisotropy given to the CoNbZr layer 22S. The magnetic anisotropy of the FeSiN layer 24S is given in the same direction as the magnetic anisotropy given to the CoNbZr layer 22S.

Each of FIGS. 3 and 4 shows a CoNbZr layer 22S.
Also shown is the magnetic permeability μ of a sample in which an Al ₂ O ₃ layer is interposed between the sample and the FeSiN layer 24S. The Al ₂ O ₃ layer corresponds to the magnetic gap layer 27 shown in FIG. In the case where an Al ₂ O ₃ layer is interposed between the CoNbZr layer 22S and the FeSiN layer 24S, the
The magnetic anisotropy is given to the FeSiN layer 24S by the induced magnetic anisotropy action by the magnetic anisotropy given to the r layer 22S. Furthermore, not only in the case where the CoNbZr layer 22S and the FeSiN layer 24S are in direct contact with each other, but also in the case where the CoNbZr layer 22S and the FeSiN layer 24S are indirectly in contact with each other via the Al ₂ O ₃ layer, the magnetic difference of the FeSiN layer 24S can be obtained. Anisotropy can be controlled.

FIG. 5 is a diagram showing the results of measuring the magnetic characteristics of the sample in which the conditions for forming the FeSiN layer 24S were changed. FeSiN
The layer 24S is formed by sputtering at a substrate temperature of 280 ° C. (film forming condition 2). Although not a known technique, as a result of basic research conducted by the present inventors, the magnetic anisotropy of the FeSiN layer 24S changes depending on the substrate temperature at the time of film formation by sputtering, and this magnetic anisotropy is controlled by adjusting the substrate temperature. It has been confirmed that it can be controlled. At the stage when the film was formed at a substrate temperature of 280 ° C. (before heat treatment in a fixed magnetic field), FIG.
As shown in (1), the FeSiN layer 24S already has a distinct magnetic anisotropy. In a sample of 10 mm × 10 mm size, the direction of the magnetic anisotropy of the FeSiN layer 24S does not change even if the heat treatment is performed while applying a fixed magnetic field in the direction A, which is the direction of the hard axis. It can be confirmed that the magnetic anisotropy imparted to the FeSiN layer 24S by the film formation is very stable.

However, a magnetic layer having a fine shape of 50
In a sample having a size of μm × 50 μm, clear magnetic anisotropy of the FeSiN layer 24S cannot be confirmed. Further, in the composite magnetic layer in which the FeSiN layer 24S is superposed on the CoNbZr layer 22S, a clear magnetic interaction as shown in FIGS. 3 and 4 cannot be confirmed.

The following summarizes the measurement results of the magnetic characteristics described above.

(A) FeSiN layer 24S on CoNbZr layer 22S
In the composite magnetic layer in which the CoNbZr layer 22S
Due to magnetic interaction due to magnetic anisotropy imparted to FeSi
The N layer 24S can be given the same magnetic anisotropy as the CoNbZr layer 22S.

(B) The FeSiN layer 24S must be a magnetic film whose magnetic anisotropy is independently induced by heat treatment in a fixed magnetic field.

(C) From CoNbZr layer 22S to FeSiN layer 24S
Magnetic interaction becomes more effective as the planar size of the FeSiN layer 24S decreases. In particular, in the thin-film magnetic head, the plane size of each of the lower intermediate magnetic layer 24 and the upper middle magnetic layer 28 is much smaller than the plane size of each of the lower magnetic layer 22 and the upper magnetic layer 32. 2
4. The use of magnetic interaction is optimal when controlling the magnetic anisotropy of the upper intermediate magnetic layer 28.

Next, a method of manufacturing the above-described thin film magnetic head will be described. 6 to 10 are longitudinal sectional structural views of the thin-film magnetic head shown in each manufacturing process for explaining the manufacturing method.

(1) A lower magnetic layer 22 is formed on a non-magnetic substrate 20 via an insulating layer 21 (see FIG. 6). Lower magnetic layer 2
2 is formed of a CoNbZr layer formed by sputtering,
This CoNbZr layer is formed with a thickness of, for example, 5 μm. The CoNbZr layer formed by sputtering is patterned by ion beam etching. The ion beam etching is performed, for example, under the conditions of an Ar gas pressure of 2.666 × 10 ⁻² Pa, a beam acceleration voltage of 600 V, and a beam incident angle of 10 degrees. Under such conditions, the CoNbZr layer is patterned in about 150 minutes. A resist mask formed by a photolithography technique is used for patterning. After the patterning is completed, the resist mask is removed.

(2) As shown in FIG. 6, an insulating layer 23 is formed around the lower magnetic layer 22. Insulating layer 23 is formed of SiO ₂ layer deposited at a film thickness of 7μm by sputtering for example, the flattening polishing process to expose the surface of the lower magnetic layer 22 in the SiO ₂ layer is performed.

(3) The intermediate lower magnetic layer 24 on the lower magnetic layer 22
Is formed, and an insulating layer 25 is formed around the intermediate lower magnetic layer 24 (see FIG. 7). The intermediate lower magnetic layer 24 is formed of a FeSiMoNO layer formed by sputtering.
The layer is formed with a thickness of, for example, 5 μm. FeSiMoNO layer,
In order to obtain a sufficient magnetic interaction in a heat treatment in a fixed magnetic field performed later, for example, the film is formed under the condition that the anisotropic magnetic field Hk is 3 Oe or less. The FeSiMoNO layer formed by sputtering is patterned by ion beam etching. The conditions for ion beam etching are the same as described above. The insulating layer 25 is formed of, for example, a SiO ₂ layer deposited to a thickness of 7 μm by sputtering, and a flattening polishing process is performed on the SiO ₂ layer until the surface of the intermediate lower magnetic layer 24 is exposed.

(4) As shown in FIG. 7, a coil embedding groove 25H is formed in the insulating layer 25 around the middle lower magnetic layer 24 on the right side in the figure, and a lower side is formed inside the coil embedding groove 25H. Of the conductive coil 26 is buried. The coil embedding groove 25H is formed by reactive ion etching, and the conductive coil 26 is formed of, for example, a Cu layer.

(5) The magnetic gap layer 27 is formed on the intermediate lower magnetic layer 24 (see FIG. 8). The magnetic gap layer 27 is formed of, for example, a SiO ₂ layer deposited by sputtering,
The O ₂ layer is formed with a thickness of, for example, 0.2 μm.

(6) An upper intermediate magnetic layer 28 is formed on the magnetic gap layer 27, and an insulating layer 29 is formed around the upper intermediate magnetic layer 28 (see FIG. 8). The upper intermediate magnetic layer 28 is made of FeSi formed by sputtering in the same manner as the intermediate lower magnetic layer 24.
The FeSiMoNO layer is formed with a thickness of, for example, 5 μm. The FeSiMoNO layer is formed, for example, under conditions where the anisotropic magnetic field Hk is 3 Oe or less so that sufficient magnetic interaction can be obtained in a heat treatment in a fixed magnetic field performed later. The FeSiMoNO layer formed by sputtering is patterned by ion beam etching. The conditions for ion beam etching are the same as described above. Insulating layer 2
9 is S deposited with a film thickness of 7 μm by sputtering, for example.
formed by iO ₂ layers, this is the SiO ₂ layer flattening polishing treatment to the surface of the intermediate upper magnetic layer 28 is exposed is performed.

(7) As shown in FIG. 8, a coil embedding groove 29H is formed in the insulating layer 29 around the middle upper magnetic layer 28 on the right side in the figure, and the upper side of the coil embedding groove 29H is formed inside the coil embedding groove 29H. The conductive coil 30 is embedded. The coil embedding groove 29H is similarly formed by reactive ion etching, and the conductive coil 30 is formed of, for example, a Cu layer.

(8) The insulating layer 31 is formed on the insulating layer 29 (see FIG. 9). The insulating layer 31 is formed of, for example, an SiO ₂ layer deposited by sputtering.

(9) The upper magnetic layer 32 is formed on the insulating layer 31 and on the intermediate upper magnetic layer 28 (see FIG. 9). The upper magnetic layer 32 is formed of a CoNbZr layer formed by sputtering in the same manner as the lower magnetic layer 22, and the CoNbZr layer has a thickness of, for example, 5 μm.
It is formed with a film thickness of. CoNb deposited by sputtering
The Zr layer is patterned by ion beam etching.

(10) As shown in FIG. 9, the upper magnetic layer 32
Is formed around the substrate. The insulating layer 33 is formed of, for example, an SiO ₂ layer deposited to a thickness of 7 μm by sputtering, and a flattening polishing process is performed on the SiO ₂ layer until the surface of the upper magnetic layer 32 is exposed.

(11) Here, in order to impart magnetic anisotropy to each of the lower magnetic layer 22 and the upper magnetic layer 32, a heat treatment in a fixed magnetic field is performed. The heat treatment in the fixed magnetic field is, for example, 9
With a fixed magnetic field of kG applied, in an Ar gas atmosphere, 45
Perform at a temperature of 0 ° C. By the heat treatment in the fixed magnetic field, the lower magnetic layer 22 and the upper magnetic layer 32 are given magnetic anisotropy as shown in FIG. Further, magnetic anisotropy is imparted to the intermediate lower magnetic layer 24 and the intermediate upper magnetic layer 28 by magnetic interaction from the lower magnetic layer 22 and the upper magnetic layer 32. The middle lower magnetic layer 24 and the middle upper magnetic layer 28 are given the same magnetic anisotropy as the magnetic anisotropy given to the lower magnetic layer 22 and the upper magnetic layer 32.

When these series of manufacturing steps are completed, a thin-film magnetic head having excellent high-frequency characteristics and high recording density is completed.

As described above, in the thin-film magnetic head according to the present embodiment, the intermediate lower magnetic layer 24 is formed by the lower magnetic layer 22 or the upper magnetic layer 32 provided with magnetic anisotropy.
Alternatively, a stable magnetic anisotropy can always be provided to the intermediate upper magnetic layer 28. When the magnetic anisotropy given to the intermediate lower magnetic layer 24 or the upper intermediate magnetic layer 28 matches the magnetic path direction,
Since the magnetic efficiency of the magnetic path can be improved, the recording / reproducing output characteristics of the thin-film magnetic head can be improved. Further, if the magnetic anisotropy imparted to the lower intermediate magnetic layer 24 or the upper intermediate magnetic layer 28 is increased, the high frequency characteristics of the thin-film magnetic head can be improved.

Further, in the method of forming the thin-film magnetic head thus configured, the step of imparting magnetic anisotropy to the lower magnetic layer 22 or the upper magnetic layer 32 by a heat treatment step in a fixed magnetic field includes: The magnetic anisotropy equivalent to that of the lower magnetic layer 22 or the upper magnetic layer 32 can be given to the upper magnetic layer 24 or the intermediate upper magnetic layer 28. Therefore, the lower intermediate magnetic layer 24 or the upper intermediate magnetic layer 2
8, the number of manufacturing steps of the thin-film magnetic head can be reduced by an amount corresponding to the step of giving magnetic anisotropy to the magnetic head.

(Second Embodiment) In this embodiment, a case will be described in which a magnetic layer, particularly an intermediate magnetic layer, is formed of another material in a thin-film magnetic head. FIG. 10 is a longitudinal sectional structural view of a thin-film magnetic head for performing recording and reproduction incorporated in the magnetic recording and reproducing apparatus according to the second embodiment of the present invention. The thin-film magnetic head includes a lower magnetic layer 22, an intermediate lower magnetic layer 24, a magnetic gap layer 27, and an upper intermediate magnetic layer 2 on a non-magnetic substrate 20, similarly to the thin-film magnetic head according to the above-described first embodiment.
8, an upper magnetic layer 32, and conductive coils 26 and 30.

The thin-film magnetic head according to the present embodiment is incorporated in a hard disk, and the non-magnetic substrate 20 is made of, for example, Al.
₂ O ₃ -TiC substrate is used.

The lower magnetic layer 22 is formed of a CoNbZr layer. The lower intermediate magnetic layer 24 is composed of Fe, Si and N having a high saturation magnetic flux density.
Is formed of a soft magnetic material having magnetic anisotropy containing as a constituent element. The intermediate lower magnetic layer 24 includes the lower magnetic layer 22.
(Or, the same magnetic anisotropy as that of the lower magnetic layer 22 is given by magnetic interaction due to the magnetic anisotropy given to the intermediate upper magnetic layer 28 or the upper magnetic layer 32). The middle upper magnetic layer 28 is formed of a CoNbZr layer, which is a magnetic layer similar to the lower magnetic layer 22.
The upper magnetic layer 32 is formed of a CoNbZr layer like the lower magnetic layer 22.

Similarly to the thin-film magnetic head according to the first embodiment, the lower magnetic layer 22, the intermediate upper magnetic layer 28 and the upper magnetic layer 32 are given magnetic anisotropy by heat treatment in a fixed magnetic field. Magnetic anisotropy is provided to the intermediate lower magnetic layer 24 by magnetic interaction. The middle lower magnetic layer 24 is given the same magnetic anisotropy as the magnetic anisotropy given to the lower magnetic layer 22, the intermediate upper magnetic layer 28, and the upper magnetic layer 32. The basic manufacturing method is the same as the method of manufacturing the thin-film magnetic head according to the above-described first embodiment, and a description thereof will be omitted.

In the thin-film magnetic head configured as described above, the same effects as those obtained by the thin-film magnetic head according to the first embodiment can be obtained.

The present invention is not limited to the above embodiment. For example, the present invention uses a FeMN (M is at least one or more compositional element selected from metals or metalloids other than Fe) layer or a FeMNO layer as a soft magnetic film having a high saturation magnetic flux density. it can. The compositional elements that compose this soft magnetic film include C, Al, Ti, V, Cr, Co, Ni,
Cu, Ga, Ge, Y, Zr, Mo, Ag, In, Sn, Sb, Hf, W, Pt,
Au, Ta, Pb, and Pd are included.

Further, the present invention is not limited to the structure of the thin film magnetic head described above. For example, the present invention relates to the above-described second embodiment.
Upper magnetic layer 28 of the thin-film magnetic head according to the third embodiment.
Can be applied to a thin-film magnetic head in which no is present. Also, the present invention does not include the intermediate lower magnetic layers 24 and 28, and the lower magnetic layer (for example, CoNbZr layer) 22 and the upper magnetic layer (for example, FeSiMoNO2).
The present invention can be applied to a thin-film magnetic head in which a magnetic gap layer 27 is formed between the thin film magnetic head and the layer 32. Further, the present invention can be applied to a composite magnetic head or the like including a read-only head including a magnetoresistive element or a giant magnetoresistive element and a write-only head.

[0068]

According to the present invention, FeMN having a high saturation magnetic flux density is provided.
It is possible to easily control the magnetic anisotropy of the magnetic alloy layer or the FeMNO magnetic alloy layer, and to provide a thin-film magnetic head having excellent recording characteristics, high frequency characteristics, and excellent reproduction output characteristics.

Further, according to the present invention, since the vicinity of the magnetic gap is formed of a FeMN magnetic alloy layer or a FeMNO magnetic alloy layer having a high saturation magnetic flux density, the recording characteristics are excellent, and the upper and lower magnetic layers are made of CoM.
Since it is formed of the NbZr layer, a thin-film magnetic head having excellent reproduction output characteristics can be provided.

Further, the present invention can provide a method of forming a thin-film magnetic head which can reduce the number of manufacturing steps of the thin-film magnetic head.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional structural view of a thin-film magnetic head for performing recording / reproduction incorporated in a magnetic recording / reproduction device according to a first embodiment of the present invention.

FIGS. 2A and 2B are plan views of main parts of a sample prepared for explaining magnetic interaction.

FIG. 3 is a diagram showing a result of measuring magnetic properties of a sample.

FIG. 4 is a diagram showing a result of measuring magnetic properties of a sample.

FIG. 5 is a diagram showing a result of measuring magnetic properties of a sample.

FIG. 6 is a longitudinal sectional structural view of the thin-film magnetic head in a first manufacturing step illustrating a manufacturing method.

FIG. 7 is a longitudinal sectional structural view of the thin-film magnetic head in a second manufacturing process.

FIG. 8 is a longitudinal sectional structural view of the thin-film magnetic head in a third manufacturing step.

FIG. 9 is a longitudinal sectional structural view of the thin-film magnetic head in a fourth manufacturing step.

FIG. 10 is a longitudinal sectional structural view of a thin-film magnetic head for performing recording and reproduction incorporated in a magnetic recording and reproducing apparatus according to a second embodiment of the present invention.

FIG. 11A is a cross-sectional view of a thin-film magnetic head in a first manufacturing step illustrating a manufacturing method according to the related art, and FIG.
FIG. 3 is a plan view of the thin-film magnetic head.

FIG. 12 is a sectional view of the thin-film magnetic head in a second manufacturing step.

13A is a cross-sectional view of the thin-film magnetic head in a third manufacturing step, and FIG. 13B is a plan view of the thin-film magnetic head.

14A is a cross-sectional view of the thin-film magnetic head in a fourth manufacturing step, and FIG. 14B is a plan view of the thin-film magnetic head.

FIG. 15 is a sectional view of the thin-film magnetic head in a fifth manufacturing step.

[Explanation of symbols]

 Reference Signs List 20 nonmagnetic substrate 20S nonmagnetic substrate (sample) 22 lower magnetic layer 22S CoNbZr layer 24 intermediate lower magnetic layer 24S FeSiN layer 27 magnetic gap layer 28 intermediate upper magnetic layer 32 upper magnetic layer 26, 30 conductive coil

Claims (4)

[Claims] A first magnetic layer provided with a magnetic anisotropy; and a first magnetic layer superposed on the first magnetic layer, the magnetic effect of the first magnetic layer being substantially the same as that of the first magnetic layer. A thin-film magnetic head, comprising: a second magnetic layer that is controlled to be isotropic. 2. The method according to claim 1, wherein the first magnetic layer is an amorphous magnetic alloy layer, and the second magnetic layer is formed of Fe, M (M is at least one selected from metal elements or metalloid elements other than Fe. 2. The thin-film magnetic head according to claim 1, wherein the thin-film magnetic head is a soft magnetic film that contains N or more elements as constituent elements, or contains Fe, M, N, and O as constituent elements. 3. The thin-film magnetic head according to claim 1, wherein the second magnetic layer is a magnetic alloy layer having an induced magnetic anisotropy. 4. A step of laminating a first magnetic layer and a second magnetic layer of a type different from the first magnetic layer on a non-magnetic substrate, and performing a heat treatment in a magnetic field to form the first magnetic layer. Giving magnetic anisotropy to the second magnetic layer and applying the same magnetic anisotropy to the second magnetic layer by a magnetic action from the first magnetic layer by the same heat treatment in a magnetic field. A method for forming a thin-film magnetic head, comprising: