JPH11256391A - Method for forming metallic film on insulating material, method for conducting through-hole using the method and production of contact probe - Google Patents

Abstract

PROBLEM TO BE SOLVED: To surely and easily form a metallic film with high reliability without using Ag paste and to conduct a through-hole in a method for forming the metallic film and a method for producing a contact probe. SOLUTION: A metallic film 17 for etching previously provided on an insulating material 14 while leaving a part where the insulating material is exposed, is vaporized at least partly by plasma etching and a part of the vaporized metal is deposited on a part where the insulating material is exposed to form a plating substrate film 18. Subsequently, the plating substrate is electroplated with a metal to form a metallic plating film 19.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a metal film on an insulating material, such as a polyimide resin, by forming a metal film on the surface of the insulating material. A contact that is used as a probe pin or socket pin, etc., is used as a probe pin or socket pin, and is incorporated into a probe card, test socket, etc., and contacts each terminal of a semiconductor IC chip, a liquid crystal device, etc. to perform an electrical test. The present invention relates to a method for manufacturing a probe.

[0002]

2. Description of the Related Art In general, a contact pin is used to conduct an electrical test by contacting a semiconductor chip such as an IC chip or an LSI chip or each terminal of an LCD (liquid crystal display). In recent years, as the integration and miniaturization of IC chips and the like have increased, the pitch of contact pads, which are electrodes, has been reduced, and the pitch of contact pins has been required to be narrower. However, with a tungsten needle contact probe used as a contact pin, it has been difficult to cope with a multi-pin narrow pitch due to the limitation of the diameter of the tungsten needle.

On the other hand, for example, Japanese Patent Publication No. 7-820
No. 27 proposes a contact probe technique in which a plurality of pattern wirings are formed on a resin film, and the ends of these pattern wirings are arranged so as to protrude from the resin film and serve as contact pins. In this technical example, the tip of each of the plurality of pattern wirings is used as a contact pin, thereby achieving a narrow pitch with a large number of pins.
This eliminates the need for many complicated components.

As shown in FIGS. 6 and 7, a conventional contact probe 1 is cut out into a predetermined shape as an IC probe, and is formed on the surface of a polyimide resin film 2 with Ni (nickel) or a Ni alloy. It has a structure in which the pattern wiring 3 is attached, and the tip of the pattern wiring 3 protrudes from the end of the resin film 2 to form a contact pin 3a. Reference numeral 4 denotes an alignment hole, and reference numeral 5 denotes a window portion opened for connecting the pattern wiring 3 and the wiring on the printed circuit board.

Some of the above-mentioned contact probes 1 are provided with a metal layer 6 serving as a ground on the back surface of the resin film 2 as shown in FIG. In this contact probe 1, contact pins 3a and metal layers 6
In order to make electrical conduction with the via hole H, a via hole H is provided as a through hole reaching both, and the via hole H is filled with an Ag (silver) paste P as a conductive material. The contact pins 3a are provided with Au (gold) plating AU.

The reason why the Ag paste P is used to conduct the via holes H is that a polyimide resin (resin film 2) as an insulating material is provided between the contact pins 3a and the metal layer 6, so This is because it is difficult to form a plating layer in the via hole H by plating, and electrical conduction cannot be achieved. In addition, when a dry method by sputtering is used, a dedicated device, a sputtering target, and the like must be separately prepared, which is costly.

[0007]

SUMMARY OF THE INVENTION Conventional via holes H
However, the following problems remain in the method of conducting the conduction by using the Ag paste P. That is, since the Ag paste P contains a non-conductive material such as an organic solvent and a binder in addition to the Ag powder of the metal component, there is an inconvenience that reliability such as conductivity is low. Further, since the Ag paste P is simply filled in the via hole H, there is a disadvantage that the Ag paste P is easily peeled off even with a slight impact. Furthermore, a step of applying the Ag paste P and a step of heat-treating and curing the Ag paste P are required, and the production is troublesome.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and it is possible to form a metal film reliably and easily with high reliability without using an Ag paste, and to form a metal film on an insulating material capable of further achieving conduction. It is an object of the present invention to provide a method for forming a metal film, a method for conducting through holes using the same, and a method for manufacturing a contact probe.

[0009]

Means for Solving the Problems The present inventors have conducted research on the plasma etching technique and have obtained the following knowledge. That is, when selectively removing a metal film formed on the surface of an insulating material by plasma etching, a certain reactive gas is plasma-ionized to chemically react with a metal film to be etched and evaporate. It has been found that a part of the metal component which has once evaporated to the exposed portion of the insulating material and scattered around has reattached to form a very thin metal film.

The present invention is a technique based on the above research results, and employs the following configuration in order to solve the above problems. In other words, in the method for forming a metal film on an insulating material according to the first aspect, the etching metal film provided in advance is at least partially evaporated by plasma etching while leaving a part where the insulating material is exposed on the insulating material. A base film forming step of forming a plating base film by attaching a part of the evaporated metal to a portion where the insulating material is exposed; and a plating film for forming a plating metal film by electroplating a metal on the plating base film. A technique including a forming step is employed.

In this method of forming a metal film on an insulating material, at least a portion of the etching metal film previously provided on the insulating material in the base film forming step by plasma etching while leaving a part of the insulating material exposed is partially etched. Since the plating base film is formed by evaporating and attaching a part of the evaporated metal to a portion where the insulating material is exposed, a metal thin film composed of a metal component of the etching metal film is formed on the surface of the insulating material exposed portion. . Further, in the plating film forming step, a metal is electrolytically plated on the plating underlayer to form a plating metal film, so that only the metal is deposited with the metal of the plating underlayer as a nucleus, and a thick plating metal film is firmly formed. You. The metal of the metal film for etching and the metal deposited by electrolytic plating may be different from each other. That is, the plating base film and the plating metal film in the portion where the insulating material is exposed may be formed of different metal materials.

According to a second aspect of the present invention, there is provided a through-hole conduction method in which at least one of the metal films formed on the front and back surfaces of the film-like or plate-like insulating material has an opening and reaches the both metal films. A method of conducting a through-hole for electrically conducting both metal films through the through-hole plating step of forming the plated metal film in the through-hole by the method of forming a metal film on an insulating material according to claim 1. In the through hole plating step, at least the etching metal film formed on the metal film on the opening side is plasma etched in the base film forming step to expose the insulating material on the inner peripheral surface of the through hole. Forming a plating base film on a portion; and the plating metal for electrically connecting both metal films on the front and back surfaces to the inner peripheral surface of the through hole in the plating film forming step. Technique and a step of forming a is employed.

[0013] In this through hole conduction method, in the through hole plating step, at least the etching metal film formed on the metal film on the opening side is plasma-etched in the base film forming step to form an inner peripheral surface of the through hole. A step of forming a plating base film on a portion where the insulating material is exposed, and a step of forming a plating metal film for electrically connecting both metal films on the front and back surfaces to the inner peripheral surface of the through hole in the plating film forming step. Because the metal component evaporated by plasma etching enters the through hole from the opening and adheres to the exposed insulating material on the inner peripheral surface,
A thick plated metal film can be formed also in the through hole, and conduction of the metal films on the front and back surfaces can be easily performed via the plated metal film.

According to a third aspect of the present invention, there is provided a contact probe manufacturing method, wherein a plurality of pattern wirings are formed on a front surface of a film having a rear surface metal film provided on a back surface side, and each end of these pattern wirings is projected from the film. A method for manufacturing a contact probe, comprising disposing contact pins and electrically connecting said contact pins and a back metal film through through holes, said method being applied to or bonded to a material of said contact pins on a substrate layer. A first metal layer forming step of forming a first metal layer of a material; and a step of applying a mask on the first metal layer and providing the pattern wiring and the contact pins in an unmasked portion. A plating step of forming a second metal layer by plating, a step of forming an etching metal film on the back metal film, and removing the mask. A film applying step of applying the film covering at least a portion provided for the contact pins on the second metal layer, and the through hole opening on the back side of the film and reaching the pattern wiring; Forming a through hole; forming a through hole; separating a portion including the film and the second metal layer from a portion including the substrate layer and the first metal layer; A conductive step of forming the plating base film and the plated metal film by the through hole conduction method according to claim 2 in the formed through hole and conducting the pattern wiring and the back surface metal film. Adopted.

In this method of manufacturing a contact probe,
The method further comprises a conduction step of forming a plating base film and a plating metal film in the through hole conduction method according to claim 2 in the through hole formed in the through hole formation step, and conducting the pattern wiring and the back surface metal film. In addition, the contact pins and the back metal film can be easily brought into conduction through the plated metal film formed in the through hole.

According to a fourth aspect of the present invention, in the method of manufacturing a contact probe according to the third aspect, the film attaching step includes the step of attaching the second metal layer including a portion provided to the contact pin. An overall attaching step of covering the entire film and attaching the film, and a pin exposing step of removing a portion of the film covering a portion provided for the contact pin, wherein the conducting step includes the entire attaching step. A technique of performing the base film forming step between the exposing step and the exposing step is employed.

In this method of manufacturing a contact probe,
In the conduction step, since the base film forming step is performed between the entire deposition step and the exposing step, in the base film forming step, the portions other than the through holes are covered with the film, the substrate layer, and the first metal layer, and are evaporated. Metal components adhere only to through holes. Therefore, since metal does not adhere to unnecessary portions other than the through holes, short-circuit failure between contact pins and the like can be prevented.

In the method for manufacturing a contact probe according to a fifth aspect of the present invention, in the method for manufacturing a contact probe according to the third aspect, the film attaching step is performed by excluding at least a portion provided to the contact pin. A partial application step of covering the metal layer and applying the film, and an end face protection that covers at least an end face of the film provided on the contact pin exposed in the partial application step and provided with a protective film. And a protective film removing step of removing the protective film. The conducting step employs a technique of performing the base film forming step between the end face protecting step and the protective film removing step.

In this method of manufacturing a contact probe,
In the conduction step, a base film formation step is performed between the end face protection step and the protection film removal step, so that at least a portion provided to the contact pins in the base film formation step is covered with the protection film, and the evaporated metal component Adheres to the through-hole, but does not adhere to the end surface of the film on the side provided with the contact pins, thereby preventing short circuit failure.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of a method for manufacturing a contact probe according to the present invention will be described below in the order of steps with reference to FIGS.

[Base Metal Layer Forming Step (First Metal Layer Forming Step)] First, as shown in FIG. 1A and FIG. C
Base metal layer (first metal layer) by u (copper) plating
11 is formed.

[Pattern forming step] After a photoresist layer 12 is formed on the base metal layer 11, as shown in FIGS. 1B and 2B, the photoresist is formed by photolithography. A photomask 13 having a predetermined pattern is applied to the layer 12, and the layer 12 is exposed to light.
As shown in FIG. 3C, the photoresist layer 12 is developed to remove the portion that will become the pattern wiring 3, and an opening 12a is formed in the remaining photoresist layer (mask) 12.

In the present embodiment, the photoresist layer 12 is formed of a negative photoresist, but the desired opening 1 is formed by employing a positive photoresist.
2a may be formed. In the present embodiment, the photoresist layer 12 corresponds to a “mask” in the present invention. However, the "mask" in the claims of the present application
The term “open” means that the opening 1 is formed through an exposure and development process using a photomask 13 like the photoresist layer 12 of the present embodiment.
However, it is not limited to the one in which 2a is formed. For example, a film or the like in which a hole is formed in advance in a portion to be plated (that is, a film formed in advance in a state indicated by reference numeral 13 in FIG. 1C) may be used. In the present invention,
When such a film or the like is used as a “mask”, the pattern forming step in the present embodiment is unnecessary.

[Plating Step] Then, FIG.
As shown in FIG. 2D, a Ni alloy layer (second metal layer) N serving as the pattern wiring 3 is formed in the opening 12a by electrolytic plating. After the above plating process,
As shown in FIG. 1E and FIG. 2E, the photoresist layer 12 is removed.

[Overall Deposition Step [Film Deposition Step]] Next, as shown in FIG. 1F and FIG. 2F, the contact pins 3a shown in FIG. The resin film (insulating material) 14 is adhered on the entire Ni alloy layer N including the portion to be the tip portion with an adhesive (insulating material) 14a.

The resin film 14 is a two-layer tape in which a metal film 15 is integrally provided on the back side of a polyimide resin PI (insulating material). A film 16 and an etching metal film 17 formed of Au (gold) on the copper foil 16.

Prior to the entire deposition step, the metal film 15 of the two-layer tape is subjected to copper etching using a photomechanical technique, as shown in FIGS. 1 (f) and 2 (f). As described above, the ground surface of the copper foil 16 is formed, and the hole 16a is formed by selectively removing only the copper foil 16 in the portions provided for the contact pins 3a, the window 5, and the via hole H, respectively. Then, place A on the remaining copper foil 16
A metal film 17 for etching with u is formed by electrolytic plating or vapor deposition.

Then, in this overall application step, the polyimide resin PI of the two-layer tape is applied to the Ni alloy layer N via the adhesive 14a. The metal film 1
5 may use Ni, Ni alloy or the like in addition to the copper foil 16.

[Via Hole Forming Step (Through Hole Forming Step)] After the resin film 14 is bonded, as shown in FIG. 3A and FIG. Is selectively applied only to the portion provided to the via hole H, that is, only the hole 16a, thereby evaporating the polyimide resin PI and the adhesive 14a in the portion where the copper foil 16 is removed by the copper etching. As a result, a via hole H having an opening on the back surface and reaching the Ni alloy layer N is formed.

[Base Film Forming Step (Through Hole Plating Step)] After forming the via hole H, as shown in FIGS. 3B and 4B, the back surface of the resin film 14 is plasma etched. Plasma treatment is performed by the apparatus. That is, using CF ₄ as a reaction gas, the ionization is plasma ionized, and F ⁺ and Au of the etching metal film 17 are chemically reacted to selectively etch and evaporate. Further, by mixing O ₂ in addition to CF ₄ as a reaction gas, the oxygen radical O ⁺ is chemically reacted with the polyimide resin PI and the residue of the adhesive 14a remaining at the time of forming the via hole, and this is removed by ashing.

At this time, the etching metal film 17
As u evaporates and scatters to the surroundings, a part thereof enters the via hole H from the opening and re-attaches to the portion where the polyimide resin PI and the adhesive 14a are exposed, and plating of a very thin film of Au is performed. A base film 18 is formed.

[Pin Exposing Step] After the base film forming step, as shown in FIG. 3C and FIG.
The portion provided to the contact pin 3a and the window 5 opened in the above is irradiated with a laser beam from the back side to evaporate the resin film 14 covering the portion provided to the contact pin 3a and the window 5 and selectively. Is performed.

[Ashing process] After the pin exposing process,
The back side of the resin film 14 is again subjected to plasma processing by a plasma etching apparatus. In the plasma treatment in the base film forming step, CF ₄ and O ₂ were used as reaction gases.
In the plasma processing in the ashing processing step, oxygen radicals O ⁺ are chemically reacted with the polyimide resin PI and the residue of the adhesive 14a remaining in the pin exposing step by using only O ₂ , and the oxygen radicals O ⁺ are removed by ashing.

[Separation Step] Then, as shown in FIG. 3D and FIG. 4D, a portion composed of the resin film 14, the pattern wiring 3 and the base metal layer 11 is removed from the supporting metal plate 10. Let it separate.

[Cu etch process] After separation, FIG.
And as shown in FIG. 4 (e), through Cu etching,
The base metal layer 11 is removed, and only the pattern wiring 3 is adhered to the resin film 14.

[Plating Film Forming Step (Gold Coating Step)] Then, as shown in FIGS. 3 (f) and 4 (f), the exposed pattern wiring 3 is plated with Au, and the surface is Au-plated. The layer AU is formed. At this time, the Au layer AU is formed on the entire surface of the contact pins 3a protruding from the resin film 14 over the entire circumference. At the same time, on the inner surface of the via hole H, Au is deposited on the plating base film 18 using Au of the plating base film 18 as a nucleus, and a thick plating metal film 19 is formed. That is, the contact pin 3a (pattern wiring 3) and the copper foil 16
It becomes electrically conductive through the plated metal film 19 formed in the via hole H.

Through the above steps, the contact probe 100 in which the contact pins 3a are electrically connected to the copper foil 16 serving as the ground plane by the via holes H is manufactured.

In the method of manufacturing the contact probe 100, the insulating material in the via hole H, that is, the polyimide resin PI and the adhesive 14a
Au of the etching metal film 17 is evaporated and reattached to the exposed metal film 17 by plasma etching to form a plating base film 18, and only Au is exposed to the exposed polyimide resin PI and the adhesive 14a by electrolytic plating. Since the Au film is deposited, a thick Au film having excellent conductivity can be firmly formed in the via hole H as compared with the case of the Ag paste.

The copper foil 1 on the opening side of the via hole H
The etching metal film 17 formed on the substrate 6 is plasma-etched to form a plating base film 18 on the inner peripheral surface of the via hole H.
Is formed, and the plated metal film 19 is formed in the plating film forming step. Therefore, Au evaporated by plasma etching enters the via hole H from the opening and adheres to the exposed portion of the inner peripheral surface of the insulating material. , The thick plated metal film 19 can be easily formed also in the via hole H,
The pattern wiring 3 and the copper foil 16 can be electrically conducted.

Further, in the entire deposition step, the resin film 14 is set so as to cover the entire Ni alloy layer N including the portions provided for the contact pins 3a and the windows 5, and in the pin exposure step, a base film forming step is performed. Since the portion of the resin film 14 covering the portions to be provided later for the contact pins 3a and the windows 5 is removed, the portions other than the via holes H are covered with the resin film 14, the supporting metal plate 10 and the base metal layer 11 in the base film forming step. The evaporated Au adheres only to the via hole H. Therefore, since Au does not adhere to unnecessary portions other than the via hole H, a short circuit between the contact pins 3a can be prevented.

Next, a second embodiment of the method for manufacturing a contact probe according to the present invention will be described in the order of steps with reference to FIG. The steps in the second embodiment are the same as those in the first embodiment up to the steps of [base metal layer forming step (first metal layer forming step)], [pattern forming step], and [plating step]. Therefore, steps after the plating step will be described.

[Partial Deposition Step [Film Deposition Step]] As shown in FIG. 5A, on the entire Ni alloy layer N including the part to be the contact pin 3a, as in the first embodiment. Resin film (insulating material) 14 is bonded with an adhesive (insulating material) 14a.

"Via Hole Forming Step (Through Hole Forming Step) and Pin Exposure Step" After the resin film 14 is bonded, as shown in FIG.
By irradiating the entire surface with a laser beam from the back surface side, the polyimide resin PI and the adhesive 14a in the portion where the copper foil 16 has been removed by the copper etching are evaporated. by this,
In the hole 16a, a via hole H having an opening on the back surface side and reaching the Ni alloy layer N is formed, and a portion of the polyimide resin PI and the adhesive 14a provided to the contact pin 3a and the window 5 is provided. Removed. That is, the resin film 14 is formed on the Ni alloy layer N except for the portion provided for the window portion 5 and the contact pin 3a and the via hole H.
And is placed in an adhered state.

[Ashing Process Step] Then, the back surface of the resin film 14 is subjected to plasma processing by a plasma etching apparatus. In this plasma treatment, using only O ₂ as a reaction gas, the oxygen radical O ⁺ is chemically reacted with the residue of the polyimide resin PI and the adhesive 14a remaining in the above step, and the ashing is removed.

[End face protection process] After the ashing process,
As shown in FIG. 5B, a portion provided for the window 5 and the contact pins 3a and an end surface 14b of the resin film 14 on the side provided for the contact pins 3a are formed by heat-resistant polyimide tape or the like. Masking by covering with a protective film 20.

[Base Film Forming Step (Through Hole Plating Step)] After the end face protecting step, as shown in FIG. 5C, the back surface of the resin film 14 is subjected to plasma processing by a plasma etching apparatus. At this time, CF is used as a reaction gas.
_{Using 4} and O ₂ , Au is evaporated from the etching metal film 17 and scattered around, and a part thereof is re-attached to the portion of the via hole H where the polyimide resin PI and the adhesive 14 a are exposed, A plating base film 18 made of a very thin Au film is formed.

[Protective film removing step] After the base film forming step,
As shown in FIG. 5D, the protective film 20 that has protected the contact pins 3a and the end faces 14b and the like is peeled off from the contact pins 3a and removed. At this time, the window 5,
Portion Provided for Contact Pin 3a and End Face 14
Since b was covered with the protective film 20 in the base film forming step, Au did not adhere and the plating base film 18 was not formed.

Thereafter, similarly to the first embodiment, the [separation step], the [Cu etching step], and the [plating film forming step (gold coating step)] are sequentially performed, whereby the first step is performed.
A contact probe similar to that of the embodiment can be manufactured.

In the method for manufacturing a contact probe according to the second embodiment, since a base film forming step is performed between the end face protecting step and the protective film removing step, at least a portion provided for the contact pin 3a in the base film forming step. The evaporated Au is covered with the protective film 20 and adheres to the via hole H, but does not adhere to the end surface 14b of the resin film 14 on the side provided for the contact pin 3a, thereby preventing a short circuit failure. it can.

The present invention also includes the following embodiments. (1) In the above embodiments, the present invention is applied to a method of manufacturing a contact probe, but the present invention may be applied to a method of forming a metal film on another insulating material. For example, the present invention may be applied to a method of conducting both metal films through through holes in a flexible substrate having a metal film formed on the front and back surfaces.

(2) In each of the above embodiments, the present invention is applied to a method of manufacturing an IC contact probe, but may be applied to another method. For example, the present invention is applied to a method of manufacturing a contact probe used for an IC chip test socket mounted on an IC chip burn-in test device or the like or a contact probe used for an LCD test probe device for protecting the IC chip by holding it inside. May be.

(3) Although Au is used for the metal film 17 for etching, Ag (silver), Cu (copper), Al (aluminum), Ni (nickel) or the like may be used instead of Au. That is, a metal having good conductivity is preferable. When these etching metal films are employed, a gas that can react with these metals and generate a compound having a high vapor pressure is appropriately selected as a reaction gas used for plasma etching. For example, Au
In the case of Al or Cu, a fluorine-based gas is preferable, and in the case of Al, a chlorine-based gas is preferable.

(4) In the second embodiment, the end face protection step is performed after the ashing processing step. However, the ashing processing step may be performed later. That is, the end face protection step may be performed first, followed by the base film formation step (through-hole plating step) and the protection film removal step, and then the ashing processing step.

[0054]

According to the present invention, the following effects can be obtained. (1) According to the method for forming a metal film on an insulating material according to claim 1, the metal film for etching provided in advance in the base film forming step is evaporated by plasma etching, and the metal evaporated on the portion where the insulating material is exposed is removed. A plating base film is formed by attaching it, and in the plating film forming step, a metal is electrolytically plated on the plating base film to form a plating metal film. Therefore, the metal of the plating base film formed on the exposed surface of the insulating material is nucleated. Then, the metal is deposited, and a thick plated metal film can be formed. Therefore, only the metal component is deposited in the portion where the insulating material is exposed, so that a thick metal film having excellent conductivity can be firmly and easily formed as compared with the case of the Ag paste. Also, there is no need to prepare a separate target as in the case of sputtering,
A metal film can be formed over an insulating material.

(2) In the through hole conduction method according to the second aspect, in the through hole plating step, the etching metal film formed on the metal film on the opening side is subjected to plasma etching in the base film forming step. Forming a plating base film on the exposed portion of the insulating material on the inner peripheral surface of the through hole, and plating metal for electrically connecting both metal films on the front and back surfaces to the inner peripheral surface of the through hole in the plating film forming process Forming a film, the evaporated metal component enters the through-hole through the opening and adheres to the exposed portion of the insulating material on the inner peripheral surface thereof, thereby forming a thick plated metal film also in the through-hole. Can be formed firmly. Therefore, there is no need for a time-consuming step conventionally performed to achieve conduction of the through hole, that is, a step of applying an Ag paste and a heat treatment thereof, and the conduction is reliably achieved via the plated metal film in the through hole. be able to.

(3) According to the method for manufacturing a contact probe according to the third aspect, the plating base film and the plating metal film are formed in the through hole formed in the through hole forming step by the through hole conduction method according to the second aspect. Is formed, and a conduction step for conducting the pattern wiring and the back surface metal film is provided, so that the contact pins and the back surface metal film can be easily brought into conduction through the plated metal film formed in the through hole.

(4) In the method for manufacturing a contact probe according to the fourth aspect, in the conduction step, the base film forming step is performed between the entire deposition step and the exposing step, so that the through hole is formed in the base film forming step. Is protected by film, and metal does not adhere to unnecessary parts other than through holes,
Short-circuit failure between contact pins can be prevented.

(5) According to the method for manufacturing a contact probe according to the fifth aspect, in the conduction step, the base film forming step is performed between the end face protecting step and the protective film removing step.
In the base film forming step, at least a portion provided for the contact pin is covered with the protective film, and the evaporated metal component adheres to the through hole, but does not adhere to the end surface of the film on the side provided for the contact pin. Without
Short-circuit failure can be prevented.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing steps in one embodiment of a method for manufacturing a contact probe according to the present invention.

FIG. 2 is a cross-sectional view of a contact pin showing a step in an embodiment of a method for manufacturing a contact probe according to the present invention.

FIG. 3 is a cross-sectional view showing a step in one embodiment of a method for manufacturing a contact probe according to the present invention.

FIG. 4 is a sectional view of a contact pin showing a step in an embodiment of a method for manufacturing a contact probe according to the present invention.

FIG. 5 is a sectional view of a contact pin portion showing a step in an embodiment of the method for manufacturing a contact probe according to the present invention.

FIG. 6 is an essential part perspective view showing a contact probe in a conventional example of a method for manufacturing a contact probe according to the present invention.

FIG. 7 is a plan view showing a contact probe in a conventional example of a method for manufacturing a contact probe according to the present invention.

FIG. 8 is a cross-sectional view showing a contact pin portion in a conventional example of a method for manufacturing a contact probe according to the present invention.

[Description of Signs] 3 Pattern wiring 3a Contact pin 11 Base metal layer (first metal layer) 12 Photoresist layer (mask) 14 Resin film (insulating material) 14a Adhesive (insulating material) 15 Metal film 16 Copper foil ( Back metal film) 17 Etching metal film 18 Plating base film 19 Plating metal film 20 Protective film 100 Contact probe AU Au layer H Via hole (through hole) N Ni alloy layer (second metal layer) PI Polyimide resin (insulating material) )

──────────────────────────────────────────────────の Continuation of the front page (51) Int.Cl. ⁶ Identification symbol FI H05K 3/42 640 H05K 3/42 640B (72) Inventor Hideaki Yoshida 12th Techno Park, Mita City, Hyogo Mitsubishi Materials Corporation Inside the Mita Plant (72) Inventor Toshinobu Ishii Twelve sixteen Techno Park in Mita City, Hyogo Prefecture Inside the Mita Plant of Mitsubishi Materials Corporation

Claims (5)

[Claims] At least a portion of an etching metal film provided on an insulating material is partially evaporated by plasma etching while leaving a portion where the insulating material is exposed. A plating film forming step of forming a plating metal film by electroplating a metal on the plating plating film by forming a plating plating film by partially attaching the plating plating film. A method for forming a metal film on an insulating material. 2. A metal film formed on the front and back surfaces of a film-like or plate-like insulating material has an opening in at least one of the metal films and electrically connects the two metal films via a through hole reaching both metal films. A method of forming a metal film on an insulating material according to claim 1, further comprising a through-hole plating step of forming the plated metal film in the through-hole by the method of forming a metal film on an insulating material according to claim 1. A step of plasma-etching the etching metal film formed on the metal film on the opening side in the base film forming step to form a plating base film on a portion of the inner peripheral surface of the through hole where the insulating material is exposed; Forming the plated metal film on the inner peripheral surface of the through hole in the plated film forming step to electrically connect the two metal films on the front and back surfaces. Through hole conduction method. 3. A plurality of pattern wirings are formed on a surface of a film having a back surface metal film provided on a back surface side, and each tip of these pattern wirings is arranged so as to protrude from the film to form contact pins. A method of manufacturing a contact probe in which a metal film is electrically connected to a metal via a through hole, wherein a first metal layer of a material to be attached to or bonded to a material of the contact pin is formed on a substrate layer. Forming a first metal layer, and applying a mask on the first metal layer, and forming a second metal layer to be provided for the pattern wiring and the contact pins on an unmasked portion by plating. A plating step, a step of forming an etching metal film on the back metal film, and at least the contact on the second metal layer from which the mask has been removed. A film applying step of applying the film covering except for a portion provided to the film; a through hole forming step of opening the back surface of the film to form the through hole reaching the pattern wiring; 3. A separation step of separating a portion made of the second metal layer from a portion made of the substrate layer and the first metal layer; and a separation step in the through hole formed in the through hole forming step. A method for manufacturing a contact probe, comprising: a step of forming the plating base film and the plating metal film by a through-hole conduction method and conducting the pattern wiring and the back metal film. 4. The method of manufacturing a contact probe according to claim 3, wherein, in the film attaching step, the film is attached so as to cover an entirety of the second metal layer including a portion provided for the contact pin. And a pin exposing step of removing a portion of the film covering a portion provided for the contact pin, wherein the conducting step includes the step of forming the base film between the entire applying step and the exposing step. A method for manufacturing a contact probe, comprising performing a forming step. 5. The method of manufacturing a contact probe according to claim 3, wherein, in the film attaching step, the film is attached so as to cover the second metal layer except at least a portion provided for the contact pin. A partial coating step, a pin protecting step of covering at least an end surface of the film on a side of a portion provided to the contact pin exposed in the partial coating step with a protective film, and a protective film for removing the protective film. A method of manufacturing a contact probe, comprising: a removing step; wherein the conducting step includes performing the base film forming step between the pin protecting step and the protective film removing step.