JPH1125437A - Manufacture of magnetic head and device thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To simplify the manufacturing process in excluding a photolithography process by forming a slider pattern in an aperture part, reduction-projecting this pattern to irradiate a slider surface of the magnetic head and performing direct working of blasting an etching gas on the slider surface. SOLUTION: A magnetic head element part is formed on a alumina titanium carbide substrate 201, and is cut and separated to form slider blocks 204, which are then arranged on a sample holder 207, and this sample holder is introduced into an ion beam working device. The etching gas 210 is supplied from a gas nozzle 117 to blast on the working surfaces prior to irradiating these slider surfaces of the slider blocks 204 with an ion beam 209 formed in a mode for reduction-projecting an image of the aperture formed with the desired pattern. As a result, the etching gas 210 is activated by the ion beam 209 to encourage the working of the alumina titanium carbide film as the substrate, thus finishing the etching in a short time.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film magnetic head and, more particularly, to a slider processing method for floating a magnetic head element on a surface facing a magnetic recording medium.

[0002]

2. Description of the Related Art In recent years, magnetic recording / reproducing apparatuses have been increasing in density and miniaturization, and as a result, the shape of a slider has become complicated in order to keep the distance between a small thin-film magnetic head element and a recording medium constant. Conventionally, as a slider processing method for a thin film magnetic head, a photolithography technique and an ion milling technique have been used as described in JP-A-7-14137.

After the thin film magnetic head elements 602 are formed on the alumina titanium carbide substrate 601, the magnetic head elements are cut and separated line by line, and are arranged on a holder with the slider formation surface facing upward. Then, a resist 603 is applied on the alumina titanium carbide substrate 601 as shown in FIG.

FIG. 6 shows a photolithographic technique.
The resist 603 is exposed and developed to a desired pattern as shown in FIG.

[0005] Thereafter, the alumina titanium carbide substrate 601 is removed by ion milling using the resist 603 exposed as shown in FIG.
Etch 4

[0006] Finally, as shown in FIG.
Is stripped with a solvent or the like, thereby completing the slider processing.

[0007]

However, in the above prior art, since the depth of the groove of the slider is as deep as several microns,
The thickness of the resist is required to be about 10 μm, and there is a problem that the resist is shaved during ion milling and dimensional accuracy is reduced.

When the alumina titanium carbide substrate is etched, the sputtered particles adhere to the side walls of the resist, and the adhered substances remain even after the removal of the resist, forming burrs, lowering the flying characteristics of the slider, There is a problem that the magnetic recording medium is damaged.

[0009]

In order to solve the above-mentioned problem, a slider pattern is formed on an aperture of an optical system of an energy beam processing apparatus without using photolithography technology, and the slider pattern of the aperture is reduced and projected to obtain a magnetic field. This is achieved by directly irradiating the slider surface of the head with an etching gas while spraying the etching gas to directly process the slider surface.

[0010]

BEST MODE FOR CARRYING OUT THE INVENTION

[Embodiment 1] The configuration and operation of a processing apparatus using an ion beam as an energy beam for performing slider processing of a magnetic head element according to the present invention will be described with reference to FIG.

First, an ion beam is extracted from an ion source 101 by an extraction electrode, is focused by an irradiation lens 103, and is irradiated on an aperture 104. Aperture 1
Reference numeral 04 has a switching mechanism that switches between a circular aperture for focusing the ion beam 109 in a spot shape and a mask portion on which a slider pattern is formed. The ion beam 109 that has passed through the aperture 104 passes through a deflection electrode 105 for determining an irradiation position, and is irradiated on a sample by a projection lens 107. An electrode 106 for measuring the current value of the ion beam 109 is provided below the deflection electrode 105, and the current value can be measured by an ammeter 110 attached to the outside.

The ion beam optical system is controlled by a control unit including a high voltage power supply 125 and an ion beam controller 126. These ion beam optical systems are provided in the column chamber 111, and are evacuated to a high vacuum of the order of 10 to ⁶ Pa by a vacuum exhaust device (not shown).

An XY stage 113 is provided in the main chamber 122 for mounting the sample 112 and moving it to an arbitrary position. The XY stage 113 has a mirror 114 for reflecting a laser beam for a laser length measuring device 116. Is mounted, laser light is introduced from outside of the main chamber 122 through a window 115 from a laser length measuring device 116, and the position of the XY stage 113 is measured by the laser length measuring device 116.

The XY stage 113 is controlled by an XY stage controller 127, and the laser length measuring device can read the measured coordinates by a laser length measuring device controller 128.

Further, in the main chamber 122, for example, a microchannel plate 108 is provided below the optical axis of the ion beam 109 as a secondary particle detector, and secondary particles emitted from the sample 112 by irradiation of the ion beam 109 are detected. Then, a scanning ion microscope image can be observed.

A gas nozzle 117 for spraying an etching gas onto the sample 112 is provided, and valves 120 and 121 and a flow control device 1 are provided in front of the gas nozzle 117.
A gas cylinder 118 is attached via 19, and the etching gas in the gas cylinder 118 is sprayed on the sample 112. The supply and flow rate control of the etching gas are controlled by a gas controller 129. The inside of the main chamber 122 is also evacuated to a high vacuum of the order of 10 to ⁴ Pa by a vacuum exhaust device (not shown).

The sample 112 is introduced from the load lock chamber 124 through the gate valve 123.

Each controller of the above-mentioned ion beam processing apparatus is controlled by a control device 130, and is configured to be capable of setting processing positions and setting conditions.

A method for manufacturing the magnetic head according to the first embodiment using the present apparatus will be described with reference to FIG. First, as shown in FIG. 2A, a magnetic head element portion is formed on an alumina titanium carbide substrate 201.

Next, the magnetic head elements are cut and separated line by line to form a slider block 204 as shown in FIG. At this time, the slider surface is cut and polished so that the alignment mark 205 formed simultaneously with the formation of the thin-film magnetic head element can be seen.

The cut slider blocks 204 are arranged on a sample holder 207 as shown in FIG. 2C. A plurality of alignment marks 206 for positioning are provided on the sample holder 207. When the thin-film magnetic head element is mounted, the dimension of the sample holder 207 is measured by a dimension measuring device using a laser length measuring device or the like. The relative position between the alignment mark 206 and the alignment mark 205 of the magnetic head element is measured. After that, the sample holder 207 is introduced into the ion beam processing apparatus.

First, the sample holder 207 is placed on the XY stage 11
3, the alignment mark 206 of the sample holder 207
Is moved so as to be below the optical axis of the ion beam, and a focused ion beam 208 focused to φ0.1 μm or less is irradiated while scanning as shown in FIG.
07 alignment mark 206 is observed.

A plurality of alignment marks 206 on the sample holder 207 are observed, and a correlation between the position of the alignment mark 206 and the position of the XY stage 113 of the ion beam processing device is obtained. By doing so, the alignment mark 2 of the sample holder 207 measured by the above-described dimension measuring device is obtained.
06 from the magnetic head element alignment mark 205
The position is known, and the magnetic head element can be automatically moved to the processing position by the XY stage 113.

Then, as shown in FIG. 2E, the aperture of the optical system of the ion beam is switched to an aperture on which a desired slider pattern is formed, and the mode of the aperture image is switched to a mode of reducing and projecting the ion beam 209. Irradiate the slider surface of the magnetic head 204. At this time, in order to improve the processing throughput, the ion beam 2
Before irradiating 09, the etching gas 210 is supplied from the gas nozzle 117 and sprayed on the processing surface.

As a result, the etching gas 210 is activated by the ion beam 209 to accelerate the processing of the alumina titanium carbide film as the substrate, and the etching is completed in a short time. The processing time is determined in advance by the current value of the ion beam 209 and the processing speed based on the gas flow rate by an experiment, and the electrode 1 for measuring the current value by the deflection electrode 105 before irradiating the substrate with the ion beam 209.
By deflecting the ion beam 209 to 06 and measuring the current value with the ammeter 110, the time for processing an arbitrary depth is determined from the relationship between the processing speed and the gas flow rate.

After the processing is completed, the irradiation of the ion beam 209 is temporarily stopped, and the XY stage 113 is moved.
The next magnetic head element is processed by the same process.

As an etching gas that reacts with the alumina titanium carbide film, for example, a fluorine-based gas such as XeF _2, a chlorine-based gas such as Cl ₂ or BCl _3, or an oxygen gas may be used. Alternatively, a mixed gas of these may be used.

In this embodiment, the ion beam processing apparatus is provided with optical observation means such as an optical microscope or a laser microscope, and the alignment mark 206 of the sample holder 207 and the alignment mark 205 of the magnetic head element are respectively provided by the optical observation means. The processing positioning can also be performed by observing and determining the correlation position between the mark position and the XY stage 113.

Embodiment 2 Next, a second embodiment of the present invention will be described. Example 1 Configuration of Ion Beam Processing Apparatus
Is the same as FIG. As in the working method, a magnetic head element is cut out and mounted on a sample holder in the same manner as in the first embodiment, and the relative position of the alignment mark is measured by a dimension measuring device, and then introduced into the ion beam processing device.

The ion beam is narrowed down in the ion beam processing apparatus, and the position of the alignment mark and the relative position of the XY stage are measured. Then, the aperture is switched to a slider pattern, the parameters of the ion beam optical system are switched to a mode in which the slider pattern is reduced and projected, and the ion beam formed in the slider pattern is irradiated on the slider processing surface of the magnetic head. At this time, under the condition that the irradiated ion beam 209 is focused on the slider processing surface, the beam current density distribution is in a state without disturbance as shown in FIG.

On the other hand, the condition of the projection lens is slightly shifted from the condition of focusing on the slider processing surface of the magnetic head, so that the ion beam 301 to be irradiated is out of focus. As a result, as shown in FIG. 3B, the current density distribution of the irradiated ion beam 301 becomes inaccurate at the end of the ion beam 301, and the beam sags.

By processing the slider with this ion beam 301, the cross-sectional shape of the processed slider follows the current density pattern of the ion beam 301 as shown in FIG. I can do it. The inclination angle of the side wall can be set to an arbitrary inclination angle by examining the conditions of the projection lens 107 and the cross-sectional shape of the processed slider by an experiment in advance.

As in the first embodiment, the slider can be processed at a high speed by supplying the etching gas during the irradiation with the ion beam and performing the processing.

In the first and second embodiments, an ion beam is used as an energy beam, but the same processing can be performed by using an electron beam.

[Embodiment 3] A method of using a laser beam as an energy beam according to a third embodiment of the present invention will be described with reference to FIGS. FIG. 4 is a schematic diagram of the device configuration of the present embodiment.

In FIG. 4, a laser beam 402 is oscillated from a laser oscillator 401, and the beam diameter is expanded by a beam expander 403. Then, the light passes through the half mirror 406, passes through the slit in which the pattern of the slider is formed, is reflected by the mirror 405, and is reflected by the objective lens 408.
And irradiates the sample 112 via the laser introduction window 409. The light emitted from the reference light source 410 has the same optical axis as the laser light 402 by the half mirror 406, and is irradiated onto the sample 112 in the same manner as the laser light 402.

Light emitted from another reference light source 411 illuminates the sample 112 by the half mirror 407,
The image of No. 2 is captured by the imaging lens 412 and the CCD camera 413, and is observed by the monitor 414. At this time, the light emitted from the reference light source 410 causes the slit 40
4 can be observed on the monitor 414.

The XY stage 113 and the gas nozzle 117 are provided in the main chamber 413 as in the first embodiment.

[Embodiment 4] Next, a method of processing a slider of a magnetic head using the present apparatus will be described with reference to FIG.
First, a magnetic head element is formed on an alumina titanium carbide substrate 201 as shown in FIG.

Next, the magnetic head elements are cut and separated line by line to form a slider block 204 as shown in FIG. At this time, the slider surface is cut and polished so that the alignment mark 205 formed simultaneously with the formation of the thin-film magnetic head element can be seen.

The cut slider blocks 204 are arranged on the sample holder 207 as shown in FIG. 5C. Then, the sample holder 207 is introduced into the magnetic head manufacturing apparatus of FIG. 4, and is moved to the optical axis position by the XY stage 113.

Illuminated by the reference light source 411, the magnetic head is observed, and is observed on the monitor 414 as shown in FIG. On the monitor 414, there is a cross mark 501 for performing alignment with the alignment mark 205 of the magnetic head. The XY stage 113 is moved so that the cross mark 501 and the alignment mark 205 are aligned to perform processing positioning.

On the screen of the monitor 414, an image 502 of the slit 404 by the reference light source 410 is projected and visible.
2 are irradiated. Next, while the etching gas 210 is blown from the gas nozzle 117, the slider 211 is processed by irradiating the laser beam 402 onto which the image of the slit 404 is projected.

After the processing of one location is completed, the next magnetic head slider is processed by the above-described positioning method.

As the laser beam of this embodiment, for example, a fundamental wave of an Ar laser or a second harmonic of a YAG laser may be used, and the etching gas may be the same as that of the first embodiment.

In this embodiment, since the magnetic head element is not irradiated with the charged beam, there is an effect that the element is not damaged.

In the present invention, the slider processing of the magnetic head is performed by the energy beam that has been reduced and projected. However, the present invention can be applied to, for example, processing of a micromechanical component.

[0048]

According to the present invention, it is possible to omit the photolithography step when processing the slider of the magnetic head, thereby simplifying the process and reducing the manufacturing cost. In addition, burrs do not occur during slider processing, and a high-precision magnetic head slider can be formed. Further, since the slider pattern merely changes the shape of the aperture, it is possible to quickly respond to the pattern change. is there.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of an ion beam processing apparatus of the present invention.

FIG. 2 is a process schematic diagram of a slider processing method of the present invention.

FIG. 3 is a schematic view of slider processing according to a second embodiment of the present invention.

FIG. 4 is a process schematic diagram of a conventional magnetic head slider processing method.

[Explanation of symbols]

101: ion source, 102: extraction electrode, 103
... irradiation lens, 104 ... aperture, 105 ... deflection electrode, 106 ... electrode, 107 ... projection lens, 108
... micro channel plate, 109 ... ion beam, 110 ... ammeter, 111 ... column chamber,
Reference numeral 112: sample, 113: XY stage, 114: mirror, 115: window, 116: laser measuring instrument, 117: gas nozzle, 118: gas cylinder, 119: charge control device, 120, 121: valve, 122: main chamber, 123 ... Gate valve, 124 ... Load lock chamber, 125 ... High voltage power supply, 126 ... Ion beam controller, 127 ... XY stage controller, 128 ...
Laser length measuring device controller, 129: gas supply controller, 130: control device, 201: alumina titanium carbide substrate, 202: magnetic head element, 203:
Element part, 204: slider block, 205: alignment mark on slider block, 206: alignment mark on sample holder, 207: sample holder, 208
... Focused ion beam, 209 ... Shaped ion beam, 210 ... Etching gas, 211 ... Slider, 3
01: shaped ion beam with shifted focal position, 302:
Slider having a side wall inclination angle, 401: laser oscillator, 402: laser light, 403: beam expander, 404: slit, 405: mirror, 40
6,407: half mirror, 408: objective lens, 40
9: laser light introduction window, 410, 411: reference light source, 41
2 ... imaging lens, 413 ... CCD camera, 414 ... monitor, 415 ... laser oscillator controller, 5
01 cross mark, 502 slit image, 601
... Alumina titanium carbide substrate, 602 ... Magnetic head element, 603 ... Resist, 604 ... Ion, 605 ... Slider.

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[Procedure amendment]

[Submission date] September 24, 1997

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Brief description of drawings

[Correction method] Change

[Correction contents]

[Brief description of the drawings]

FIG. 1 is a configuration diagram of an ion beam processing apparatus of the present invention.

FIG. 2 is a process schematic diagram of a slider processing method of the present invention.

FIG. 3 is a schematic view of slider processing according to a second embodiment of the present invention.

FIG. 4 is a schematic diagram of a laser beam processing apparatus according to a third embodiment of the present invention.

FIG. 5 is a process schematic diagram of a slider processing method according to a third embodiment of the present invention.

FIG. 6 is a process schematic diagram of a conventional magnetic head slider processing method.

[Explanation of Signs] 101: ion source, 102: extraction electrode, 103
... irradiation lens, 104 ... aperture, 105 ... deflection electrode, 106 ... electrode, 107 ... projection lens, 108
... micro channel plate, 109 ... ion beam, 110 ... ammeter, 111 ... column chamber,
Reference numeral 112: sample, 113: XY stage, 114: mirror, 115: window, 116: laser measuring instrument, 117: gas nozzle, 118: gas cylinder, 119: charge control device, 120, 121: valve, 122: main chamber, 123 ... Gate valve, 124 ... Load lock chamber, 125 ... High voltage power supply, 126 ... Ion beam controller, 127 ... XY stage controller, 128 ...
Laser length measuring device controller, 129: gas supply controller, 130: control device, 201: alumina titanium carbide substrate, 202: magnetic head element, 203:
Element part, 204: slider block, 205: alignment mark on slider block, 206: alignment mark on substrate holder, 207: sample holder, 208
... Focused ion beam, 209 ... Shaped ion beam, 210 ... Etching gas, 211 ... Slider, 3
01: shaped ion beam with shifted focal position, 302:
Slider having a side wall inclination angle, 401: laser oscillator, 402: laser light, 403: beam expander, 404: slit, 405: mirror, 406,
407: half mirror, 408: objective lens, 409 ...
Laser light introduction window, 410, 411 ... Reference light source, 412 ...
Imaging lens, 413: CCD camera, 414: Monitor, 415: Laser oscillator controller, 50
1 Cross mark, 502 Slit image, 601
Alumina titanium carbide substrate, 602: magnetic head element, 603: resist, 604: ion, 605: slider.

Claims (9)

[Claims] In a method of manufacturing a magnetic head for recording and reproducing magnetic information on and from a magnetic recording medium, a processing method is performed by irradiating an energy beam for reducing and projecting a mask image of a mask with a slider pattern on a surface facing the magnetic recording medium. When the mask image is reduced and projected, the positional relationship between the alignment mark on the sample holder and the alignment mark on the magnetic head element is measured in advance, and the processing position is set based on the coordinate information. Manufacturing method of a magnetic head. 2. The method according to claim 1, wherein, when reducing and projecting the image of the mask, (1) mounting the magnetic head on the sample holder, and aligning the alignment mark provided on the sample holder with the alignment mark formed on the magnetic head element. (2) introducing the sample holder into the magnetic head manufacturing apparatus, finely focusing the ion beam, and scanning the alignment marks on the sample holder. Checking the alignment mark position with a scanning ion microscope image to determine the relative position of the XY stage and the sample holder, and (3) determining the processing position from the relative positions of the XY stage, the sample holder, and the magnetic head element , A method of manufacturing a magnetic head. 3. The method according to claim 1, wherein, when reducing and projecting the image of the mask, (1) mounting the magnetic head on the sample holder, and aligning the alignment mark provided on the sample holder with the alignment mark formed on the magnetic head element. (2) introducing the sample holder into the magnetic head manufacturing apparatus, confirming the position of the alignment mark with an optical microscope image, and checking the positions of the XY stage and the sample holder. A method of manufacturing a magnetic head, comprising: a step of determining a relative position; and (3) a step of determining a processing position from the relative positions of the XY stage, the sample holder, and the magnetic head element. 4. A method of forming a slider pattern on a surface facing a magnetic recording medium in a magnetic head for recording / reproducing magnetic information on / from a magnetic recording medium, the method comprising the steps of: Characterized by reactive etching by irradiation of an energy beam for reducing and projecting an image of the magnetic head. 5. The etching gas according to claim 4, wherein the etching gas supplied simultaneously with the irradiation of the energy beam is a fluorine-based gas such as XeF _2, a chlorine-based gas such as Cl ₂ or BCl _3, or an oxygen gas alone or a mixed gas thereof. The method of manufacturing the magnetic head to be used. 6. The method of manufacturing a magnetic head according to claim 1, wherein the energy beam for reducing and projecting the image of the mask is an ion beam. 7. A method according to claim 1, wherein the energy beam for projecting the image of the mask is an electron beam. 8. A method for manufacturing a magnetic head according to claim 1, wherein the focus position of the energy beam obtained by reducing and projecting the pattern of the mask is shifted so that the side wall of the slider has an arbitrary inclination angle. 9. A magnetic head manufacturing apparatus comprising: means for reducing and projecting an ion beam in a mask pattern; and means for converging and irradiating an ion beam, wherein the magnetic head element and the sample holder are mounted on a sample holder on which the magnetic head element is mounted. A plurality of alignment marks provided on a sample holder so that a relative position with respect to the magnetic head can be measured.