JPH11251643A - Light emitting diode with hermetically sealed housing and its manufacture - Google Patents
Light emitting diode with hermetically sealed housing and its manufactureInfo
- Publication number
- JPH11251643A JPH11251643A JP10363742A JP36374298A JPH11251643A JP H11251643 A JPH11251643 A JP H11251643A JP 10363742 A JP10363742 A JP 10363742A JP 36374298 A JP36374298 A JP 36374298A JP H11251643 A JPH11251643 A JP H11251643A
- Authority
- JP
- Japan
- Prior art keywords
- emitting diode
- light emitting
- glass tube
- hermetically sealed
- tube piece
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ハーメチックシー
ルされたハウジングを有する発光ダイオード及びこの発
光ダイオードの製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode having a hermetically sealed housing and a method for manufacturing the light emitting diode.
【０００２】[0002]
【従来の技術】表面取付け技術のための周知の発光ダイ
オード、すでに小さな寸法の点で傑出しているＳＭＤ−
ＬＥＤの他に、現在なおさらに小さな発光ダイオード、
いわゆるミニ−ＬＥＤが市販されている。これらのミニ
−ＬＥＤは、チップ−オン−ボード技術において製造さ
れ、その際、ダイオードチップは、まずプリント板上に
取付けられ、かつ接触させられ、かつ最後に光を透過す
る合成樹脂によって覆われる。プリント板は、表面取付
けのために必要な接続要素を有する。このような発光ダ
イオードは、例えば会社カタログ“Ｃｉｔｉｚｅｎ Ｅ
ｌｅｃｔｒｏｎｉｃ Ｐｒｏｄｕｃｔｓ ’９６”に、
ＣＨＩＰ−ＬＥＤと称して記載されている。その手間の
かかる製造は、これら公知のミニ−ＬＥＤにおいて不利
である。さらにこのようなハウジングは、ハーメチック
シールされておらず、このことは、例えば自動車におけ
るような極端な条件における使用を大幅に制限する。2. Description of the Related Art Known light-emitting diodes for surface mounting technology, SMDs which are already outstanding in small dimensions.
In addition to LEDs, even smaller light-emitting diodes are now
So-called mini-LEDs are commercially available. These mini-LEDs are manufactured in chip-on-board technology, where the diode chips are first mounted and contacted on a printed circuit board and finally covered with a light-transmitting synthetic resin. The printed circuit board has the necessary connecting elements for surface mounting. Such a light emitting diode is available, for example, in the company catalog “Citizen E
Electronic Products '96 ”
It is described as a CHIP-LED. Its complicated manufacturing is disadvantageous in these known mini-LEDs. Furthermore, such housings are not hermetically sealed, which greatly limits their use in extreme conditions, for example in motor vehicles.
【０００３】[0003]
【発明が解決しようとする課題】それ故に本発明の課題
は、発光ダイオードの製造方法を提供することにあり、
その際、ハウジングは、ハーメチックシールされてお
り、小さな寸法を有し、かつ方法は、簡単に、したがっ
て望ましいコストで実施されるようにする。SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a method for manufacturing a light emitting diode.
Here, the housing is hermetically sealed, has small dimensions, and the method is implemented simply and therefore at a desired cost.
【０００４】[0004]
【課題を解決するための手段】この課題は、特許請求の
範囲第１及び２項の特徴を有する方法によって、次のよ
うにして解決される。すなわちシリコンダイオードに対
して通常のＭＥＬＦ、ミニ−又はミクロ−ＭＥＬＦハウ
ジングを利用する。またダイオードチップを、２つの金
属スタンプの間に配置し、かつガラス管片内に溶融す
る。This object is achieved by the method having the features of claims 1 and 2 as follows. That is, a conventional MELF, mini- or micro-MELF housing is utilized for silicon diodes. A diode chip is also placed between the two metal stamps and melts in the glass tube piece.
【０００５】本発明の別の課題は、このような発光ダイ
オードを提供することにある。この課題は、特許請求の
範囲第８項に記載の発光ダイオードによって、次のよう
にして解決される。すなわち２つの金属スタンプの間に
配置されたダイオードチップが設けられており、このダ
イオードチップが、ガラス管片内において気密に囲まれ
ている。It is another object of the present invention to provide such a light emitting diode. This problem is solved by the light emitting diode described in claim 8 as follows. That is, a diode chip is provided between the two metal stamps, and the diode chip is hermetically enclosed in the glass tube piece.
【０００６】本発明の有利な構成は、特許請求の範囲の
従属請求項の特徴にしたがって行なわれる。[0006] Advantageous configurations of the invention are achieved according to the features of the dependent claims.
【０００７】シリコンダイオードをハーメチックシール
されたガラスハウジング内に配置することは、周知であ
る。１９９６年のＴＥＭＩＣ ＴＥＬＥＦＵＮＫＥＮ
ｍｉｃｒｏｅｌｅｃｔｒｏｎｉｃ ＧｍｂＨ社のデータ
シートによれば、ガラスからなるハーメチックシールさ
れたハウジングを備えた一連のシリコンＺ−ダイオード
が公知である。これらは、例えばいわゆるミクロ−ＭＥ
ＬＦガラスハウジングを有する系列ＢＺＭ５５Ｃ・・・
のタイプである。その際、ダイオードチップは、ガラス
管片内に収納されており、このガラス管片の両方の端部
は、それぞれ１つの金属スタンプによって閉じられてい
る。その製造の際に、この装置は、金属スタンプが一方
において両側においてダイオードチップに接触し、かつ
他方において溶融して金属スタンプに結合し、かつこの
ようにしてダイオードチップを気密に閉じるように、加
熱され、かつ同時に回転軸線に沿って圧力にさらされ
る。このプロセスステップは、例えば移動炉内におい
て、ほぼ６３０°Ｃの温度で、すなわちガラスの流動限
界より上の温度で行なわれる。[0007] It is well known to arrange silicon diodes in hermetically sealed glass housings. 1996 TEMIC TELEFUNKEN
According to the datasheet of the company microelectronic GmbH, a series of silicon Z-diodes with a hermetically sealed housing made of glass is known. These are, for example, the so-called micro-ME
Series BZM55C with LF glass housing
Type. In this case, the diode chip is housed in a glass tube, the two ends of which are each closed by a metal stamp. During its manufacture, the device is heated so that the metal stamp contacts the diode chip on one side on both sides and melts and bonds to the metal stamp on the other side, and thus closes the diode chip tightly. And is simultaneously exposed to pressure along the axis of rotation. This process step is carried out, for example, in a moving furnace at a temperature of approximately 630 ° C., ie above the glass flow limit.
【０００８】しかしちょうどこの高い温度、及び製造の
際及びまさしく動作の際にもダイオードチップに作用す
る圧力は、このようなハウジング、又は主としてＩＩＩ
−Ｖ混晶タイプの化合物半導体からなる発光ダイオード
にこれに関連した溶融プロセスを適用することから、常
に専門家を遠ざけていた。すなわちハウジングの溶融の
ために必要な温度は、すでに前記の半導体材料の分解が
始まる温度のきわめて近くにある。さらに専門家は、常
にこれらの材料における圧力による接触が光利得の減少
に、かつ劣化現象の増加に通じるという見解を持ってい
た。However, just this high temperature, and the pressure acting on the diode chip during manufacture and indeed during operation, can cause such housings, or mainly III
Specialists have always been kept away from applying the related melting process to light emitting diodes made of -V mixed crystal type compound semiconductors. That is, the temperature required for melting the housing is already very close to the temperature at which the decomposition of the semiconductor material begins. Furthermore, experts have always had the view that pressure contact in these materials leads to a reduction in optical gain and an increase in degradation phenomena.
【０００９】このような偏見の存在に対する別の印は、
このハウジング種類のいくらか大きな変形が、ＭＥＬＦ
ハウジングが、すでに８０年代のなかばからシリコンダ
イオードのために利用され、かつガラスが、それよりず
っと以前からハウジング材料としてそれ自体シリコンダ
イオードのために利用されているとはいえ、しかし現在
までまだガラス内に溶融されかつハーメチックシールさ
れた発光ダイオードが、市販において入手できないとい
う点にある。とはいえまたガラスは、カプセル材料とし
て化学的に安定であり、透明であり、かつ５５０°Ｃよ
り上までの温度に対して安定である。Another sign of the existence of such prejudice is:
A somewhat larger variant of this housing type is the MELF
Although housing has been used for silicon diodes since the middle of the eighties and glass has been used for silicon diodes as a housing material long before, but to date still in glass The problem is that light emitting diodes that have been melted and hermetically sealed are not commercially available. However, glass is also chemically stable as an encapsulant, is transparent, and is stable to temperatures above 550 ° C.
【００１０】本発明は、既存の偏見を克服し、かつ支配
的な見解に反して発光ダイオードチップに、ガラス管片
内における気密な密閉の点で傑出したＭＥＬＦ、ミニ−
又はミクロ−ＭＥＬＦハウジングを備えることにある。
あらゆる期待に反して、これらのダイオードは、大きな
光利得、長い寿命、高い温度安定性、環境の影響に対す
る高い耐性、及び小さな熱抵抗を有する。The present invention overcomes the existing prejudice and, contrary to the prevailing opinion, provides a light emitting diode chip with a MELF, a mini-cell that stands out in terms of hermetic sealing within a glass tube piece.
Or to provide a micro-MELF housing.
Contrary to all expectations, these diodes have high optical gain, long lifetime, high temperature stability, high resistance to environmental influences, and low thermal resistance.
【００１１】[0011]
【発明の実施の形態】次に本発明による発光ダイオード
の実施例、及びその製造方法を図１により説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, an embodiment of a light emitting diode according to the present invention and a method for manufacturing the same will be described with reference to FIG.
【００１２】シリコンダイオードチップの周知の組立と
同様に、発光ダイオードチップ３は、まだこれらを個別
化しないうちにチップ複合体において金属隆起部４、
５、いわゆるバンプを備える。これらのバンプ４、５
は、ダイオード３の上側及び／又は下側においてそれぞ
れの接点層装置上に取付けられ、かつなるべく銀Ａｇ又
は金Ａｕからなる。Similar to the well-known assembly of silicon diode chips, the light-emitting diode chips 3 are provided with metal bumps 4,
5, provided with so-called bumps. These bumps 4, 5
Are mounted on the respective contact layer device on the upper and / or lower side of the diode 3 and preferably consist of silver Ag or gold Au.
【００１３】ダイオード３は、個別化され、それからバ
ンプ４、５を備えた上側及び下側がガラス管片２の端部
の方向を指し示すように、ガラス管片２内に配置され
る。ガラス管片２は、丸い横断面を有する。所定の用途
のために、例えば四角形片片のような別の横断面の形
も、有利なことがある。The diode 3 is singulated and then placed in the glass tube piece 2 such that the upper and lower sides with the bumps 4, 5 point in the direction of the end of the glass tube piece 2. The glass tube piece 2 has a round cross section. For certain applications, other cross-sectional shapes, for example square pieces, may also be advantageous.
【００１４】ガラス管片２の両方の端部は、例えば銅Ｃ
ｕからなるそれぞれ１つの金属スタンプ１によって閉じ
られる。長手方向に、すなわち回転軸線に沿って管片２
及びスタンプ１は、圧力を受け、かつこのようにして利
用されたガラスの流動化温度より上に加熱される。その
際、管片２は、両方のスタンプ１によって気密に閉じら
れる。スタンプ１は、ガラス管片２のように、丸い横断
面を有し、かつ管片の内径より大きい第１の直径Ｒ１を
有する第１の区間１ａ、回りを囲む肩部１ｃ、及び管片
の内径より小さい第２の直径Ｒ２を有する内側の円筒形
部分１ｂを有する。スタンプ１は、その内側の円筒形の
部分１ｂにより、バンプ又は接点層装置４、５を介して
発光ダイオードチップ３に接触し、かつこのようにして
電気的な結合を行なう。Both ends of the glass tube piece 2 are, for example, copper C
u are closed by one metal stamp 1 each. In the longitudinal direction, ie along the axis of rotation, the tube piece 2
And the stamp 1 is heated under pressure and above the fluidization temperature of the glass thus utilized. At that time, the tube piece 2 is closed airtight by both stamps 1. The stamp 1, like a glass tube piece 2, has a round section and a first section 1 a having a first diameter R 1 that is larger than the inside diameter of the tube piece, a surrounding shoulder 1 c, and It has an inner cylindrical portion 1b having a second diameter R2 smaller than the inner diameter. The stamp 1 contacts the light-emitting diode chip 3 via bumps or contact layer devices 4, 5 by means of its inner cylindrical part 1b, and thus makes an electrical connection.
【００１５】製造技術的に、振動ふるいによって部分の
構成が行なわれ、この振動ふるい内に決められた順序
で、下側スタンプ、ガラス管片、発光ダイオードチップ
及び上側スタンプが挿入振動させられ、続いて圧力をか
けられ、かつ移動炉内において溶融される。この比較的
簡単な製造様式は、ミクロＭＥＬＦガラスハウジング内
における発光ダイオードをきわめて望ましく製造する。According to the manufacturing technology, the parts are constructed by means of a vibrating sieve, in which a lower stamp, a glass tube piece, a light-emitting diode chip and an upper stamp are inserted and vibrated in a predetermined order. And melted in a moving furnace. This relatively simple manufacturing mode makes the production of light-emitting diodes in micro-MELF glass housings very desirable.
【００１６】方法の特別な構成において、真空の存在す
るところで、ガラス管片、発光ダイオードチップ及びス
タンプの装置の加熱が行なわれるので、ガラス管片の残
りの内部空間は消滅し、かつ管片のガラスは、ダイオー
ドチップに直接結合される。ダイオードチップとガラス
の間にもはやエアギャップは存在せず、かつガラスは、
半導体結晶から光を出力結合するために一層望ましい屈
折率を有するので、発光ダイオードの光出力結合は、は
っきりと改善することができる。In a special configuration of the method, the heating of the glass tube pieces, the light emitting diode chips and the stamping device takes place in the presence of a vacuum, so that the remaining internal space of the glass tube pieces disappears and the tube pieces remain unfilled. The glass is directly bonded to the diode chip. There is no longer an air gap between the diode chip and the glass, and the glass
The light out-coupling of the light-emitting diode can be significantly improved because it has a more desirable refractive index for coupling out the light from the semiconductor crystal.
【００１７】その他の点において、このように組み立て
られた発光ダイオードは、驚くほど大きな光利得、長い
寿命、高い温度安定性、環境の影響に対する良好な耐
性、及び小さな熱抵抗を有する。ハーメチックシールし
かつ光学的に透明なガラスハウジングによって、ミクロ
−ＭＥＬＦハウジングにおいて、１．２ｍｍの直径及び
１．９ｍｍの長さであるきわめて小さな寸法を有するお
おいに温度に対して安定な発光ダイオードが生じる。In other respects, the light-emitting diodes thus assembled have surprisingly high optical gain, long lifetime, high temperature stability, good resistance to environmental influences, and low thermal resistance. The hermetically sealed and optically clear glass housing results in a largely temperature-stable light emitting diode in a micro-MELF housing with very small dimensions of 1.2 mm diameter and 1.9 mm length.
【図１】ＭＥＬＦハウジングを有する発光ダイオードの
横断面図である。FIG. 1 is a cross-sectional view of a light emitting diode having a MELF housing.
１ スタンプ ２ ガラス管片 ３ ダイオードチップ ４、 隆起部 ５ 隆起部 REFERENCE SIGNS LIST 1 stamp 2 glass tube piece 3 diode chip 4 ridge 5 ridge
───────────────────────────────────────────────────── フロントページの続き (72)発明者 ライネル・フイーマン ドイツ連邦共和国レーレンシユタインスフ エルド・リヒアルト−ヴアーグネル−シユ トラーセ４ ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Rijnell Fiemann Rerenshuitinsuf Germany Erd Richhard-Wagner-Schleuch 4
Claims (9)
ＬＦ、ミニ−又はミクロ−ＭＥＬＦハウジングを利用す
ることを特徴とする、ハーメチックシールされたハウジ
ングを有する発光ダイオードの製造方法。1. A conventional ME for a silicon diode.
A method for producing a light emitting diode having a hermetically sealed housing, characterized in that it utilizes an LF, mini- or micro-MELF housing.
スタンプ（１）の間に配置し、かつガラス管片（２）内
に溶融することを特徴とする、ハーメチックシールされ
たハウジングを有する発光ダイオードの製造方法。2. A light emitting device having a hermetically sealed housing, characterized in that a diode chip (3) is arranged between two metal stamps (1) and is melted in a glass tube piece (2). Diode manufacturing method.
（３）のそれぞれの表面側に電気的に接触させることを
特徴とする、請求項２に記載のハーメチックシールされ
たハウジングを有する発光ダイオードの製造方法。3. The production of a light-emitting diode with a hermetically sealed housing according to claim 2, characterized in that the stamp (1) is brought into electrical contact with the respective front side of the light-emitting diode chip (3). Method.
隆起部（４，５）を配置することを特徴とする、請求項
３に記載のハーメチックシールされたハウジングを有す
る発光ダイオードの製造方法。4. The method for manufacturing a light-emitting diode with a hermetically sealed housing according to claim 3, wherein metal bumps (4, 5) are arranged on the front side of the light-emitting diode (3). .
（２）とともに溶融することを特徴とする、請求項２又
は３に記載のハーメチックシールされたハウジングを有
する発光ダイオードの製造方法。5. The method as claimed in claim 2, wherein the outer surface of the stamp (1) is melted together with the glass tube piece (2).
混晶タイプの化合物半導体からなることを特徴とする、
請求項１ないし５の１つに記載のハーメチックシールさ
れたハウジングを有する発光ダイオードの製造方法。6. A diode chip (3) comprising: III-V
Characterized by being composed of a mixed crystal type compound semiconductor,
A method for manufacturing a light emitting diode comprising a hermetically sealed housing according to one of claims 1 to 5.
その際、ガラス管片（２）の材料をダイオードチップ
（３）に直接結合することを特徴とする、請求項１ない
し６の１つに記載のハーメチックシールされたハウジン
グを有する発光ダイオードの製造方法。7. Melting is performed in the presence of a vacuum,
7. The method as claimed in claim 1, wherein the material of the glass tube piece is directly connected to the diode chip. .
れたダイオードチップ（３）が設けられており、このダ
イオードチップが、ガラス管片（２）内において気密に
囲まれていることを特徴とする、ハーメチックシールさ
れたハウジングを有する発光ダイオード。8. A diode chip (3) arranged between two metal stamps (1) is provided, said diode chip being hermetically enclosed in a glass tube piece (2). A light emitting diode having a hermetically sealed housing.
プ（１）が、いわゆるＭＥＬＦ、ミニ−又はミクロ−Ｍ
ＥＬＦハウジングを形成していることを特徴とする、請
求項８に記載の発光ダイオード。9. The glass tube piece (2) and both metal stamps (1) are made of so-called MELF, mini- or micro-M
9. The light emitting diode according to claim 8, wherein the light emitting diode forms an ELF housing.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19751911A DE19751911A1 (en) | 1997-11-22 | 1997-11-22 | Manufacturing LED with hermetically sealed casing |
| DE19751911.3 | 1997-11-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11251643A true JPH11251643A (en) | 1999-09-17 |
Family
ID=7849594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10363742A Pending JPH11251643A (en) | 1997-11-22 | 1998-11-17 | Light emitting diode with hermetically sealed housing and its manufacture |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH11251643A (en) |
| DE (1) | DE19751911A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007053976A1 (en) * | 2005-11-09 | 2007-05-18 | Tak Cheong Electronics (Shanwei) Co., Ltd. | A new glass packaging diode |
| JP2010135678A (en) * | 2008-12-08 | 2010-06-17 | Toshiba Corp | Optical semiconductor device and method of manufacturing optical semiconductor device |
| US7824937B2 (en) * | 2003-03-10 | 2010-11-02 | Toyoda Gosei Co., Ltd. | Solid element device and method for manufacturing the same |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10032453A1 (en) * | 2000-07-04 | 2002-01-24 | Vishay Semiconductor Gmbh | Radiation emitting component used for producing white light has pigments of one or more luminescent dyes arranged in and/or on a glass housing |
| DE102006008793A1 (en) * | 2006-02-24 | 2007-09-13 | Osram Opto Semiconductors Gmbh | Electronic component |
| DE102008011862A1 (en) * | 2008-02-29 | 2009-09-03 | Osram Opto Semiconductors Gmbh | Miniature housing, carrier assembly with at least one miniature housing, and a method for producing a carrier assembly |
-
1997
- 1997-11-22 DE DE19751911A patent/DE19751911A1/en not_active Withdrawn
-
1998
- 1998-11-17 JP JP10363742A patent/JPH11251643A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7824937B2 (en) * | 2003-03-10 | 2010-11-02 | Toyoda Gosei Co., Ltd. | Solid element device and method for manufacturing the same |
| US8154047B2 (en) | 2003-03-10 | 2012-04-10 | Toyoda Gosei Co., Ltd. | Solid element device and method for manufacturing the same |
| US8685766B2 (en) | 2003-03-10 | 2014-04-01 | Toyoda Gosei Co., Ltd. | Solid element device and method for manufacturing the same |
| WO2007053976A1 (en) * | 2005-11-09 | 2007-05-18 | Tak Cheong Electronics (Shanwei) Co., Ltd. | A new glass packaging diode |
| JP2010135678A (en) * | 2008-12-08 | 2010-06-17 | Toshiba Corp | Optical semiconductor device and method of manufacturing optical semiconductor device |
| US8039857B2 (en) | 2008-12-08 | 2011-10-18 | Kabushiki Kaisha Toshiba | Optical semiconductor device and method of manufacturing optical semiconductor device |
| US8241937B2 (en) | 2008-12-08 | 2012-08-14 | Kabushiki Kaisha Toshiba | Optical semiconductor device and method of manufacturing optical semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| DE19751911A1 (en) | 1999-06-02 |
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