JPH11251413A - Vacuum treatment apparatus - Google Patents

Vacuum treatment apparatus

Info

Publication number
JPH11251413A
JPH11251413A JP10053230A JP5323098A JPH11251413A JP H11251413 A JPH11251413 A JP H11251413A JP 10053230 A JP10053230 A JP 10053230A JP 5323098 A JP5323098 A JP 5323098A JP H11251413 A JPH11251413 A JP H11251413A
Authority
JP
Japan
Prior art keywords
substrate
vacuum
vacuum chamber
electrode
air
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10053230A
Other languages
Japanese (ja)
Inventor
Ryota Furukawa
良太 古川
Ryuji Nagatome
隆二 永留
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP10053230A priority Critical patent/JPH11251413A/en
Publication of JPH11251413A publication Critical patent/JPH11251413A/en
Pending legal-status Critical Current

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Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a vacuum treatment apparatus, capable of preventing deviation in position of a substrate in a vacuum chamber and a trouble during carriage. SOLUTION: In a vacuum treatment apparatus, a thin-plate substrate 4 is mounted on an electrode 3 as a mounting part in a vacuum chamber 6. The inside of the vacuum chamber 6 is put in a vacuum, and the substrate 4 is treated under low-pressure atmosphere. The electrode 3 has a plurality of air discharging grooves 3a arranged linearly and continuously in a substrate carrying direction on its upper face to discharge air between the lower face of the substrate 4 and the electrode 3. Then, the dislocation of the substrate 4 caused by a difference in pressure between the upper and lower faces of the substrate 4 during vacuum exhausting can be prevented. In addition, a plurality of carrying nails can be provided, so that the carrying nails do not come out of the edge of the substrate 4 during carriage, and the substrate 4 is carried steadily.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、薄板状の基板を真
空処理する真空処理装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum processing apparatus for vacuum processing a thin substrate.

【0002】[0002]

【従来の技術】基板の表面処理等を行う装置として、プ
ラズマ処理装置などの真空処理装置が知られている。こ
の真空処理装置は、減圧雰囲気下で対象物である基板の
処理を行うものであり、処理に際しては真空チャンバ内
に基板を載置して真空チャンバ内を真空排気することが
行われる。
2. Description of the Related Art Vacuum processing apparatuses such as a plasma processing apparatus are known as apparatuses for performing surface treatment of a substrate. This vacuum processing apparatus is for processing a substrate as an object under a reduced-pressure atmosphere. At the time of processing, a substrate is placed in a vacuum chamber and the inside of the vacuum chamber is evacuated.

【0003】[0003]

【発明が解決しようとする課題】ところで、近年樹脂製
のテープ基板などの薄板状の基板が広く用いられるよう
になっている。この薄板状の基板はたわみ易く軽量であ
るため、取扱いには種々の困難がある。その1つとし
て、真空処理の際の真空チャンバ内での位置ずれがあ
る。
Incidentally, in recent years, thin plate-shaped substrates such as resin tape substrates have been widely used. Since the thin plate-shaped substrate is easy to bend and lightweight, there are various difficulties in handling. One of them is displacement in a vacuum chamber during vacuum processing.

【0004】基板が真空チャンバ内の基板載置部上に搬
入された後、真空チャンバ内の排気が行われるが、この
とき真空チャンバ内の全体が均一に排気されるとは限ら
ず、通常は障害物がなく排気され易い基板の上方の空間
部分の空気が先行して排気される。そして基板と基板載
置部の表面の隙間には空気が残留し易く、基板が薄くた
わみ易い場合には特にこの空気残留の発生頻度が高い。
この結果基板の上面と下面には圧力差が生じて基板には
浮力が働くこととなり、これにより基板の位置ずれが発
生するという問題点があった。
After the substrate is loaded on the substrate mounting portion in the vacuum chamber, the vacuum chamber is evacuated. At this time, the entire vacuum chamber is not always evacuated uniformly. The air in the space above the substrate that is easily exhausted without obstacles is exhausted first. Air is likely to remain in the gap between the substrate and the surface of the substrate mounting portion, and particularly when the substrate is thin and easily bent, the frequency of occurrence of the air residue is high.
As a result, a pressure difference is generated between the upper surface and the lower surface of the substrate, so that buoyancy acts on the substrate, which causes a problem that a displacement of the substrate occurs.

【0005】また、基板は一般に搬送路上で基板の後端
部を搬送爪で押送して搬送されるが、薄板状の基板の場
合には搬送爪が基板から外れ易く、真空チャンバ内の搬
入・搬出時にトラブルが発生するという問題点があっ
た。
[0005] Further, the substrate is generally conveyed by pushing the rear end portion of the substrate on a conveyance path by a conveyance claw. In the case of a thin plate-shaped substrate, the conveyance claw is easily detached from the substrate, so that the substrate is loaded and unloaded into a vacuum chamber. There was a problem that a trouble occurred during unloading.

【0006】そこで本発明は、真空チャンバ内での基板
の位置ずれや搬送時のトラブルを防止することができる
真空処理装置を提供することを目的とする。
SUMMARY OF THE INVENTION It is an object of the present invention to provide a vacuum processing apparatus capable of preventing a displacement of a substrate in a vacuum chamber and a trouble at the time of transfer.

【0007】[0007]

【課題を解決するための手段】請求項1記載の真空処理
装置は、真空チャンバ内に配置され薄板状の基板を載置
する基板載置部と、前記真空チャンバ内を真空排気する
排気手段とを備え、前記基板載置部の上面に、載置され
た基板の下面と前記上面との隙間の空気を抜く空気抜き
溝を設けた。
According to a first aspect of the present invention, there is provided a vacuum processing apparatus, comprising: a substrate mounting portion disposed in a vacuum chamber for mounting a thin substrate; and an exhaust means for evacuating the vacuum chamber. And an air vent groove for venting air in a gap between the lower surface of the mounted substrate and the upper surface is provided on the upper surface of the substrate mounting portion.

【0008】請求項2記載の真空処理装置は、請求項1
記載の真空処理装置であって、前記空気抜き溝が、前記
基板載置部の基板搬送方向に直線状に連続して配列され
た複数の溝であるようにした。
[0008] The vacuum processing apparatus according to the second aspect is the first aspect.
In the vacuum processing apparatus described above, the air vent groove is a plurality of grooves that are linearly and continuously arranged in the substrate transfer direction of the substrate mounting unit.

【0009】請求項1記載の発明によれば、基板載置部
の上面に基板の下面と前記上面の隙間の空気を抜く空気
抜き溝を設けることにより、真空排気時の基板の位置ず
れを防止することができる。
According to the first aspect of the present invention, an air vent groove for bleeding air between the lower surface of the substrate and the upper surface is provided on the upper surface of the substrate mounting portion, thereby preventing displacement of the substrate during vacuum evacuation. be able to.

【0010】請求項2記載の発明によれば、前記空気抜
き溝を複数設け基板搬送方向に直線状に連続して配列す
ることにより、搬送爪が基板から外れることなく安定し
て基板を搬送することができる。
According to the second aspect of the present invention, by providing a plurality of the air vent grooves and arranging them linearly and continuously in the substrate transport direction, the substrate can be transported stably without the transport claws coming off the substrate. Can be.

【0011】[0011]

【発明の実施の形態】次に本発明の実施の形態を図面を
参照して説明する。図1は本発明の一実施の形態の真空
処理装置の真空チャンバの断面図、図2は同真空処理装
置の真空チャンバの平面図である。
Embodiments of the present invention will now be described with reference to the drawings. FIG. 1 is a sectional view of a vacuum chamber of a vacuum processing apparatus according to an embodiment of the present invention, and FIG. 2 is a plan view of the vacuum chamber of the vacuum processing apparatus.

【0012】まず図1、図2を参照して真空処理装置の
構造を説明する。図2において、ベース部材1には開口
部1aが設けられており、開口部1aには絶縁部材2を
介して電極3が下方より装着されている。電極3の上方
には蓋部材5が昇降自在に配設されている。蓋部材5が
下降して蓋部材5の下端部がベース部材1に当接した状
態で、蓋部材5、ベース部材1および電極3で囲まれる
空間は真空チャンバ6を構成する。電極3上には基板4
が載置される。したがって電極3は基板載置部となって
いる。ベース部材上の蓋部材5との当接面には真空チャ
ンバ6を密封するシール部材7が装着されている。
First, the structure of a vacuum processing apparatus will be described with reference to FIGS. In FIG. 2, an opening 1 a is provided in the base member 1, and an electrode 3 is attached to the opening 1 a from below through an insulating member 2. A cover member 5 is disposed above the electrode 3 so as to be able to move up and down. When the lid member 5 is lowered and the lower end of the lid member 5 is in contact with the base member 1, a space surrounded by the lid member 5, the base member 1 and the electrode 3 constitutes a vacuum chamber 6. Substrate 4 on electrode 3
Is placed. Therefore, the electrode 3 is a substrate mounting portion. A seal member 7 that seals the vacuum chamber 6 is mounted on a surface of the base member that is in contact with the lid member 5.

【0013】ベース部材1には管部8が設けられてお
り、真空チャンバ6には管部8を介して排気手段として
の真空排気部9およびプラズマガス供給部10が接続さ
れている。真空排気部8は真空チャンバ6内の空気を排
出する。プラズマガス供給部10は真空チャンバ6内に
アルゴンガスなどのプラズマ発生用ガスを供給する。ま
た電極3は高周波電源11と電気的に接続されており、
高周波電源11を駆動することにより、電極3には高周
波電圧が印加される。
The base member 1 is provided with a tube section 8, and the vacuum chamber 6 is connected to a vacuum exhaust section 9 as an exhaust means and a plasma gas supply section 10 via the tube section 8. The vacuum exhaust unit 8 exhausts the air in the vacuum chamber 6. The plasma gas supply unit 10 supplies a plasma generating gas such as an argon gas into the vacuum chamber 6. The electrode 3 is electrically connected to a high-frequency power supply 11,
By driving the high frequency power supply 11, a high frequency voltage is applied to the electrode 3.

【0014】次に電極3の上面の構造について説明す
る。図1、図2に示すように電極3の上面には、基板4
が搬送される方向(図2において左右方向)に直線状に
連続して配列された複数の溝3aが設けられている。こ
の溝3aの機能については後述する。また電極3の上面
には搬送方向に細長形状のガイド部材12が2本装着さ
れている。ガイド部材12は基板4の幅寸法Bに対応し
た間隔で配置され、溝3aを距てる凸部3bの上面に設
けられたボルト孔14にボルト13によって固定され
る。図1の断面に示すようにボルト13はガイド部材1
2に設けられた座グリ穴12a内に嵌入し、ガイド部材
12の上面から突出しないようになっている。
Next, the structure of the upper surface of the electrode 3 will be described. As shown in FIG. 1 and FIG.
A plurality of grooves 3a arranged linearly and continuously in the direction in which is transported (the left-right direction in FIG. 2) are provided. The function of the groove 3a will be described later. On the upper surface of the electrode 3, two elongated guide members 12 are mounted in the transport direction. The guide members 12 are arranged at intervals corresponding to the width dimension B of the substrate 4, and are fixed by bolts 13 in bolt holes 14 provided on the upper surface of the convex portion 3 b that extends the groove 3 a. As shown in the cross section of FIG.
The guide member 12 does not protrude from the upper surface of the guide member 12.

【0015】ベース部材1の上流側(図2において左
側)、および下流側には、搬送レール15,16がそれ
ぞれ1対づつ配設されている。基板4は上流側から搬送
レール15上を搬送アーム17によって後端部を押送さ
れて電極3上に搬入され、処理終了後には搬送レール1
6上に搬出される。搬送アーム17の先端部には、複数
(図2においては3個)の搬送爪17aが設けられてい
る。搬送レール15,16も基板4の幅Bに応じて搬送
幅が可変となっている。
On the upstream side (left side in FIG. 2) and downstream side of the base member 1, a pair of transport rails 15 and 16 are provided. The rear end of the substrate 4 is pushed by the transfer arm 17 on the transfer rail 15 from the upstream side and is loaded onto the electrode 3.
6 is carried out. A plurality of (three in FIG. 2) transfer claws 17a are provided at the distal end of the transfer arm 17. The transfer width of the transfer rails 15 and 16 is also variable according to the width B of the substrate 4.

【0016】この真空処理装置は上記のような構成より
成り、次に動作を説明する。まず図1において真空チャ
ンバ6が開いた状態、すなわち蓋部材5が上昇した状態
で搬送アーム17によって基板4が真空チャンバ6内に
搬入される。次いで蓋部材5が下降して真空チャンバ6
が閉じられると真空排気部9を駆動して真空チャンバ6
内の空気が排出される。
This vacuum processing apparatus has the above-described configuration, and its operation will be described next. First, in FIG. 1, the substrate 4 is carried into the vacuum chamber 6 by the transfer arm 17 with the vacuum chamber 6 opened, that is, with the lid member 5 raised. Next, the lid member 5 is lowered and the vacuum chamber 6
Is closed, the vacuum exhaust unit 9 is driven to operate the vacuum chamber 6.
The air inside is exhausted.

【0017】このとき、図1に示すように、基板4がた
わんだ状態で載置され、基板4の下面と電極3上面との
隙間に空気が残留していても、基板4の全長にわたって
存在する溝3aにより前記隙間内の空気を速やかに抜く
ことができるため、基板4の上面と下面に圧力差が生じ
ることはない。したがって、電極3の上面がフラットの
場合に生じていた前記圧力差による真空排気時の基板4
の位置ずれが発生しない。すなわち溝3aは基板4の下
面と基板載置部である電極3の上面との隙間の空気を抜
く空気抜き溝として機能する。
At this time, as shown in FIG. 1, even if air is left in the gap between the lower surface of the substrate 4 and the upper surface of the electrode 3, the substrate 4 is placed over the entire length of the substrate 4. The gap 3a allows the air in the gap to be quickly evacuated, so that there is no pressure difference between the upper surface and the lower surface of the substrate 4. Therefore, when the substrate 4 is evacuated due to the pressure difference, which occurs when the upper surface of the electrode 3 is flat.
Does not occur. That is, the groove 3a functions as an air bleeding groove for bleeding air in a gap between the lower surface of the substrate 4 and the upper surface of the electrode 3 serving as the substrate mounting portion.

【0018】この後プラズマガス供給部10により真空
チャンバ6内にアルゴンガスなどのプラズマ発生用のガ
スを供給する。次いで高周波電源11を駆動して電極3
に高周波電圧を印加することにより、真空チャンバ6内
にはプラズマが発生する。その結果発生したイオンや電
子が基板4の表面に衝突することにより、基板4の表面
のプラズマ処理が行われる。このとき、ガイド部材12
を固定するボルト13は、ガイド部材12の上面から突
出しておらず基板4の周囲には形状的な凹凸がないた
め、ボルト等が突出している状態と比較してプラズマ放
電がより均一化され、したがって均一なプラズマ処理が
行われる。
Thereafter, a plasma generation gas such as argon gas is supplied into the vacuum chamber 6 by the plasma gas supply unit 10. Next, the high frequency power supply 11 is driven to drive the electrode 3
By applying a high frequency voltage to the vacuum chamber 6, plasma is generated in the vacuum chamber 6. The ions and electrons generated as a result collide with the surface of the substrate 4, so that the surface of the substrate 4 is subjected to plasma processing. At this time, the guide member 12
Since the bolts 13 for fixing do not protrude from the upper surface of the guide member 12 and have no irregularities around the substrate 4, the plasma discharge is made more uniform as compared with the state where the bolts and the like protrude, Therefore, uniform plasma processing is performed.

【0019】プラズマ処理が終了すると、真空チャンバ
6内には大気が導入される。このとき前述のガイド部材
12によって基板4がガイドされているので導入された
空気の流れによる基板4の位置ずれが発生しない。その
後、蓋部材5を上昇させて基板4を搬送レール16上に
搬出する。このとき、搬送アーム17には複数の搬送爪
17aが設けられているので、基板4の後端部を安定し
て押送することができ、基板4の搬送ミスを減少させる
ことができる。
When the plasma processing is completed, the atmosphere is introduced into the vacuum chamber 6. At this time, since the substrate 4 is guided by the guide member 12, the substrate 4 does not shift due to the flow of the introduced air. Thereafter, the lid member 5 is lifted, and the substrate 4 is carried out onto the transport rail 16. At this time, since the transfer arm 17 is provided with the plurality of transfer claws 17a, the rear end of the substrate 4 can be pushed in a stable manner, and the transfer error of the substrate 4 can be reduced.

【0020】[0020]

【発明の効果】本発明によれば、基板載置部の上面に基
板の下面と前記上面の空気を抜く空気抜き溝を設けたの
で、薄板の基板のように軽量でたわみ易く前記隙間に空
気が残留した場合においても、真空排気時に基板の上面
と下面の間に圧力差が発生しない。したがって圧力差に
よる基板の位置ずれを防止することができる。また空気
抜き溝を複数の連続した直線状の溝とすることにより、
基板の後端部を複数の搬送爪で安定して押送できるの
で、搬送ミスを減少させることができる。
According to the present invention, the lower surface of the substrate and the air vent groove for releasing air from the upper surface are provided on the upper surface of the substrate mounting portion. Even if it remains, no pressure difference occurs between the upper and lower surfaces of the substrate during evacuation. Therefore, displacement of the substrate due to the pressure difference can be prevented. In addition, by making the air vent groove a plurality of continuous linear grooves,
Since the rear end portion of the substrate can be stably pushed by the plurality of transport claws, transport errors can be reduced.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施の形態の真空処理装置の真空チ
ャンバの断面図
FIG. 1 is a sectional view of a vacuum chamber of a vacuum processing apparatus according to an embodiment of the present invention.

【図2】本発明の一実施の形態の真空処理装置の真空チ
ャンバの平面図
FIG. 2 is a plan view of a vacuum chamber of the vacuum processing apparatus according to the embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 ベース部材 3 電極 3a 溝 4 基板 5 蓋部材 6 真空チャンバ 9 真空排気部 10 プラズマガス供給部 11 高周波電源 12 ガイド部材 DESCRIPTION OF SYMBOLS 1 Base member 3 Electrode 3a Groove 4 Substrate 5 Cover member 6 Vacuum chamber 9 Vacuum exhaust part 10 Plasma gas supply part 11 High frequency power supply 12 Guide member

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】真空チャンバの内部に配置され薄板状の基
板を載置する基板載置部と、前記真空チャンバ内を真空
排気する排気手段とを備え、前記基板載置部の上面に、
載置された基板の下面と前記上面との隙間の空気を抜く
空気抜き溝を設けたことを特徴とする真空処理装置。
A substrate mounting portion disposed inside the vacuum chamber for mounting a thin plate-shaped substrate; and an exhaust unit for evacuating the vacuum chamber, wherein an upper surface of the substrate mounting portion is provided.
A vacuum processing apparatus comprising: an air vent groove for venting air in a gap between a lower surface of a mounted substrate and the upper surface.
【請求項2】前記空気抜き溝が、前記基板載置部の基板
搬送方向に直線状に連続して配列された複数の溝である
ことを特徴とする請求項1記載の真空処理装置。
2. The vacuum processing apparatus according to claim 1, wherein said air vent groove is a plurality of grooves arranged linearly and continuously in a substrate transport direction of said substrate mounting portion.
JP10053230A 1998-03-05 1998-03-05 Vacuum treatment apparatus Pending JPH11251413A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10053230A JPH11251413A (en) 1998-03-05 1998-03-05 Vacuum treatment apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10053230A JPH11251413A (en) 1998-03-05 1998-03-05 Vacuum treatment apparatus

Publications (1)

Publication Number Publication Date
JPH11251413A true JPH11251413A (en) 1999-09-17

Family

ID=12937030

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10053230A Pending JPH11251413A (en) 1998-03-05 1998-03-05 Vacuum treatment apparatus

Country Status (1)

Country Link
JP (1) JPH11251413A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002057209A (en) * 2000-06-01 2002-02-22 Tokyo Electron Ltd Single-wafer processing apparatus and single-wafer processing method
KR20170101142A (en) 2016-02-26 2017-09-05 가부시키가이샤 무라타 세이사쿠쇼 Vacuum device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002057209A (en) * 2000-06-01 2002-02-22 Tokyo Electron Ltd Single-wafer processing apparatus and single-wafer processing method
KR20170101142A (en) 2016-02-26 2017-09-05 가부시키가이샤 무라타 세이사쿠쇼 Vacuum device
US10861683B2 (en) 2016-02-26 2020-12-08 Murata Manufacturing Co., Ltd. Vacuum device

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