JPH11251057A - Manufacture of organic electroluminescence element and manufacturing device therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the occurrence of a short circuit with the same mask by making the distance between a substrate and an insertion plate forming a pattern when one electrode is formed smaller than the distance between the substrate and the insertion plate when a thin film layer including an organic electroluminescence region pinched between a first electrode and a second electrode is formed. SOLUTION: A glass substrate of 100 mm square coated with ITO on the whole face is etched to obtain an ITO stripe pattern having the average line width of 2.000 mm, the interval of 0.5 mm, and the number of lines of 30. A deposition metal mask 2 (plate thickness 50 μm, hole size 2. 000 mm square, hole interval 0. 5 mm, and number of holes 30) aligned with holes in a line is arranged on this glass substrate 1 at the gap D1 (G2) of 50 μm and the deposition source-substrate distance of 50 cm to form an organic thin film layer, then a second electrode is formed at the gap D2 (G1) of 20 μn. The patterns of a first electrode and the second electrode are smaller in size than the organic thin film layer, and no short circuit occurs.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for manufacturing an electroluminescent device used for a flat light source or a display.

[0002]

2. Description of the Related Art Thin-film electroluminescent devices are expected to be self-luminous thin-film display devices.

When the thin film electroluminescent elements are classified according to the material of the layer, they are classified into inorganic electroluminescent elements and organic electroluminescent elements. In an electroluminescent device using an inorganic material, ZnS, Z
In general, a II-VI group semiconductor such as nSe or CaS is doped with Mn or a rare earth element which is a light emission center.

On the other hand, in an electroluminescent device using an organic material, a device having a layer structure in which a hole transport layer made of an aromatic diamine and a light emitting layer made of an aluminum complex of 8-hydroxyquinoline are provided (Appl. Phys. Let
t. , 5l, 913, (1987)), and can be driven at a lower voltage than inorganic ones, and it is expected that full colorization is relatively easy.

At present, there are many devices having an anode / hole transport band / EL emission band / electron transport band / cathode, but there are cases where one or both of the hole transport band and the electron transport band are not provided. . The hole transport band or the electron transport band can be a single layer or two or more layers according to the necessity of carrier injection, carrier transport, blocking of excitons involved in carriers and light emission, increase in adhesion between layers, and the like. It is.
Further, each layer can be formed by a so-called doping method using a guest mixed with a rehost by a method such as co-evaporation.

As a film forming method, for example, a resistance heating method,
Electron beam heating method. It can be performed by a narrowly-defined vapor deposition method such as a high-frequency induction heating method, or a broadly-defined vapor deposition method such as an MBE method, a sputtering method, a laser beam method, an ion plating method, and a cluster ion beam vapor deposition method.

[0007] Generally, the vapor deposition method can control the film thickness more precisely than a wet film forming method such as a spin coater, a dip coater, a doctor blade, a roller coater, and the like. Since a film can be formed without using a binder or the like, it is advantageous in that a more efficient element can be easily manufactured.

As a method of manufacturing an element by using a vapor deposition method, a method of manufacturing an element by using a photolithography method is known in addition to a method of performing patterning using an insertion plate such as an evaporation mask. However, in the photolithography method, the solvent in the photoresist enters the element, the high-temperature atmosphere during the photoresist baking, the element such as the photoresist developing solution or the etching solution, and the plasma during dry etching cause damage. For reasons such as
There was a problem that the element was significantly deteriorated. There is also known a method in which a high wall perpendicular to a substrate is provided, oblique deposition is selectively performed, and a pattern is formed on the substrate by forming a portion hidden by the wall and a portion not hidden by the wall.

However, there is a problem that the accuracy of oblique deposition is poor and control is difficult. Further, in order to make the pattern finer, it is necessary to increase the aspect ratio (bottom / height) of the cross-sectional shape, but it is difficult to form such a wall. The vapor deposition method is the simplest of these methods, and is widely used because the film thickness and the pixel size can be controlled relatively easily.

[0010]

However, in a method of manufacturing an organic electroluminescent device using a deposition mask,
When the substrate is forcibly brought into close contact with the vapor deposition mask, the mask comes into contact with the organic thin film layer as the electroluminescent medium and is damaged, causing a problem that the element is damaged and a short circuit occurs between the electrodes.

When the substrate and the deposition mask are not adhered to each other, if the same mask is used for the deposition of the organic thin film layer and the electrode, the deposition of the electrode material is often out of the pattern of the organic material due to wraparound. In addition, there is a problem that a short circuit between the electrodes occurs with a high probability. Therefore, it is usually necessary to use at least a plurality of vapor deposition masks for forming an organic thin film layer and an electrode for manufacturing an organic electroluminescent element. (Pattern matching)) was required. If the matching is insufficient, problems such as pattern misalignment and short-circuiting occur, and much time and expensive equipment are required to perform the matching with high accuracy. Eventually, reliability, yield or productivity declined.

Further, the positional accuracy of a vapor deposition mask such as a metal mask is at most about several μm, and if the mask is replaced, the size of the hole of the vapor deposition mask for forming an organic thin film layer becomes smaller than that of the hole of the vapor deposition mask for forming an electrode. At least 0.5, depending on size
Unless it is not larger than about μm, a short circuit occurs with a very high probability. Therefore, it is extremely disadvantageous for manufacturing a high-definition element.

[0013]

SUMMARY OF THE INVENTION It is an object of the present invention to provide a method and an apparatus for manufacturing an organic electroluminescent device which uses the same mask for vapor deposition of an organic thin film layer and at least one electrode and does not cause a short circuit. To provide. Another object of the present invention is to provide a manufacturing method and a manufacturing apparatus which are advantageous for manufacturing a high-definition element.

[0014]

Means for Solving the Problems The present inventors have conducted intensive studies to solve the above-mentioned problems, and have reached the present invention. That is, the present invention includes the following inventions and embodiments.

A pair of electrodes (a first electrode and a second electrode) formed on a substrate and facing each other, and at least an electroluminescent (EL) region sandwiched between the electrodes. In a method of manufacturing an organic electroluminescent device including a vacuum deposition method, a distance between a substrate and an insertion plate having at least a hole for forming a pattern (a distance between the substrate and the insertion plate when forming at least one electrode). Gl) with respect to the distance G2 between the substrate and the insertion plate when Gl forms at least one or more single-layer or laminated thin film layers including at least the organic electroluminescent region sandwiched between the first electrode and the second electrode. And manufacturing the organic electroluminescent device such that Gl <G2.

In the manufacturing method described above, the distance Ll between the insertion plate and the evaporation source-insertion plate used when forming at least one electrode is at least one or more of a single layer or a stacked thin film layer including at least an organic electroluminescent region. Plate used to form the substrate and the distance L2 between the insert plate and the substrate
A method for manufacturing an organic electroluminescent device, wherein the method is manufactured in the same manner as described above.

Alternatively, in the method for manufacturing an organic electroluminescent device according to the above, after forming the electrodes, a wiring material is vapor-deposited while moving or vibrating in a direction in which the wiring extends while keeping the insertion plate parallel to the substrate, or A method for manufacturing an organic electroluminescent device, wherein a wiring is formed by performing an operation of vapor deposition a plurality of times after shifting in a direction of elongation.

[0018] An apparatus for manufacturing an organic electroluminescent device used in the method or the method, wherein a mechanism for moving a substrate position on a vertical line of the substrate is provided so that a distance between the substrate and the insertion plate is variable.

An apparatus for manufacturing an organic electroluminescent element used in the method described in the above or the method described above, wherein a mechanism is provided for moving the position of the insertion plate on a vertical line at the center of the substrate so that the distance between the substrate and the insertion plate is variable. .

The substrate is moved to a specific position (a,
b, c,...), the material forming each layer constituting the organic electroluminescent element is deposited from a point (A, B, C,...) on a vertical line at the center of the substrate. In the manufacturing apparatus used in the method for manufacturing an organic electroluminescent device described in the above, the substrate position (a, b, c...) And the deposition source position (A,
B, C,...) Can be set to an arbitrary size (Na, Nb, Nc,...), And the evaporation source or the substrate (and the insertion plate) can be moved on a vertical line in the center of the substrate. An apparatus for manufacturing an organic electroluminescent device, comprising:

[0021]

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for depositing an electroluminescent device including a pair of electrodes (a first electrode and a second electrode) opposed to each other and at least an electroluminescent region sandwiched between the electrodes. In the manufacturing method using the method, when forming the respective layers constituting the electroluminescent element, between the substrate and the insertion plate (e.g., an evaporation mask having a hole for forming a pattern or the like inserted between the evaporation source and the substrate). The method and the apparatus for manufacturing an electroluminescent element utilizing the fact that the distance G of each layer is individually set in accordance with each layer to change the deposition area where each layer is deposited on a substrate.

The inventors of the present application have made that the insertion plate is the same and that the position of the insertion plate is farther from the substrate, the area of the pattern deposited on the substrate becomes gradually larger. It has been experimentally confirmed that the state changes as it is, and the present invention has been achieved.

For example, if the distance between the substrate and the insertion plate at the time of forming the electrode is made smaller than that at the time of forming the organic thin film layer, the pattern of the electrode to be deposited is slightly smaller than the pattern of the organic thin film layer (normally). Vapor deposition conditions, for example, mask hole diameter to 1
00 μm, insertion plate (mask plate) -substrate distance to several hundreds
μm. In the case of the distance between the deposition source and the insertion plate to several tens of cm and the diameter of the deposition source hole to several mm, the difference in pattern size can be appropriately selected as long as the difference in size per side is not short-circuited.
Usually, it is about 0.5 μm or more, preferably about 1 μm or more) and it can be formed into a similar shape having the same center. Accordingly, pattern displacement and short-circuit between electrodes do not occur, and the reliability and yield of the element can be significantly improved. In forming the electrodes, the same effect can be obtained by bringing the substrate closer to the insertion plate instead of bringing the insertion plate closer to the substrate.

It is needless to say that a display using an organic electroluminescent device can be manufactured by using an insertion plate having a plurality of holes. In addition, it goes without saying that this technique can be applied not only to a single-color element, but also to a multi-color element and a full-color element in which one pattern component is represented by three colors of RGB.

Actually, in order to drive a plurality of elements,
It is necessary to connect the electrodes to the wiring. For example, after forming the electrodes, if the wiring material is deposited while moving or vibrating the insertion plate in the direction in which the wiring extends, (or in the direction in which the insertion plate extends) The operation of vapor deposition after shifting may be performed several times), and the formation of wiring does not require replacement of the insertion plate even once, and therefore does not require mating, thereby producing a simple and highly reliable organic electroluminescent device. it can.

[0026]

Embodiments of the present invention will be described below in detail.

Embodiment 1 Embodiment 1 will be described with reference to FIG. After washing a 100 mm square, 1.1 mm thick non-alkali glass substrate,
A film of about 1500 Å of TO was formed by sputtering, and an anode having a sheet resistance of 15 ohm / □ was obtained. IT
The glass substrate on which O was formed over the entire surface was etched using photolithography technology to obtain an average line width of 2.000.
A stripe pattern of ITO having a thickness of 0.5 mm, an interval of 0.5 mm and a line number of 30 was obtained.

Next, the glass substrate 1 on which the ITO has been patterned is subjected to ultrasonic cleaning with a surfactant, acetone and isopropyl alcohol, and finally ultrasonic cleaning with pure water.
Dry in dry nitrogen. Next, after performing UV / ozone cleaning, a metal mask 2 for vapor deposition having holes arranged in a row on the glass substrate 1 (plate thickness: 50 μm, hole size: 2.000 mm)
□, hole interval 0.5 mm, number of holes 30), gap Dl
(G2) was set to 50 μm, and the IT0 stripe and holes were arranged so as to overlap with each other and fixed to the holder. The substrate is moved to the holder, and the gap G between the substrate and the deposition mask is moved.
Is provided.

Next, an organic thin film layer and a second electrode (here,
Is a cathode). First, as a hole transport layer,
N, N'-diphenyl-N, N'-bis (3-methylphenyl
Enyl) [1,1'-biphenyl] -4,4'-diamid
(TPD) and tris-
(8-hydroxyquinolinol) aluminum (Alq
_Three), Magnesium Mg and silver Ag as electrode materials
With four different molybdenum resistance heating evaporation
Boats 3, 4, 5, 6 (Each boat has a direct
(With a lid with a hole of 1 mm in diameter).
Put in the chamber. Also, the distance from the evaporation source to the substrate
Hold the holder in the chamber so that Ll is 50 cm.
And the degree of vacuum in the chamber is 1 × 10^-6T
It was kept below orr.

Next, in the arrangement shown in FIG. 1A, 500 Å of a hole transport material, TPD, was vapor-deposited (deposition rate: 0.5 to 2 Å / sec). The average size of the formed pattern is 2.01 mm
And a pattern larger than the line width of ITO was obtained.

Next, as shown in FIG. 1 (b), Alq ₃
And set AIq ₃ to 500
Angstrom evaporation was performed (evaporation rate: 0.5 to 2 Å / sec). The pattern size of the formed Alq ₃ was 2.02 mm □ on average, and a pattern larger than the line width of 1TO was obtained.

Next, as shown in FIG. 1C, the deposition boat 5 containing Mg and the deposition boat 6 containing Ag were moved and arranged on a vertical line at the center of the substrate to form a second electrode. . At this time, the position of the substrate was brought closer to the evaporation mask, and the gap D2 (G1) between them was set to 20 μm.

Mg and Ag are co-evaporated, and the film forming speed ratio is 1
0 to 1. The deposition rate of Mg was about 3 Å / sec, and a film was formed to a thickness of about 2000 Å to form a second electrode. The size of the pattern of the second electrode was 2.005 mm □, which was a pattern slightly smaller than the organic thin film layer. The difference in pattern size between the organic thin film layer and the second electrode was slight, but no protrusion of the second electrode from the organic layer was observed. When each pixel was energized, short-circuit did not occur in all pixels, and uniform green light emission could be obtained.

Example 2 An example in which a wiring pattern is formed using only a single evaporation mask to easily produce a green display free from short-circuits will be described. Second Embodiment A second embodiment will be described with reference to FIGS.

Area 10 cm × 10 cm, thickness 0.7 mm
A non-alkali glass substrate 1 of a surfactant, acetone,
The substrate was subjected to ultrasonic cleaning with isopropyl alcohol, and finally, ultrasonic cleaning with pure water and dried in dry nitrogen. Next, U
After performing V / ozone cleaning, a vapor deposition mask 2 (plate thickness 30 μm, hole size 140 μm × 140 μm) was formed on the glass substrate 1.
m, hole interval 60 μm (pitch 200 μm), number of holes 256
× 256) with the gap D3 (G1) set to 20 μm and fixed to a holder.

The holder is provided with a mechanism for precisely moving the evaporation mask 2 and a mechanism for precisely controlling the gap with the substrate 1 and the movement in a direction parallel to the substrate. Substrate 1,
The holder holding the deposition mask 2 includes the transparent electrode (first electrode) forming chamber 11, the processing chamber 12, the organic thin film layer forming chamber 13, and the second electrode forming chamber 14 shown in FIG. It moves within a single-wafer-type deposition apparatus.

First, the holder holding the glass substrate 1 and the vapor deposition mask 2 was put into the processing chamber 12 through the insertion port, and the processing chamber was gradually evacuated and kept at 1 × 10 ^-6 Torr. Next, the holder was moved to and installed in a high-frequency excitation ion plating chamber 11 for forming a transparent electrode (first electrode) maintained at 4 × 10 ⁻⁷ Torr. Fig. 3.2 (c)
As shown in (2), the evaporation source was disposed immediately below the center of the substrate, and the distance T1 to the substrate was set to 50 cm. Oxygen gas pressure 1
During high frequency discharge at 0 ^-4 Torr level, metal indium (l
n) is deposited, and the deposition rate is 10 angstroms / sec.
While the vapor deposition is performed in step c, the vapor deposition mask 2 is slowly moved (200 μm / min or less) in a constant direction (Y direction) while keeping the gap D3 (G1) with the substrate 1 constant (20 μm) to obtain a thickness. A transparent electrode (first electrode) of indium oxide (In ₂ O ₃ ) of about 2,000 angstroms and a wiring 17 were obtained.

The size of the pattern of the first electrode and the wiring 17 is as follows:
It was 1.0 μm. Next, the deposition mask 2 was returned to the initial position, and the holder was moved to the processing chamber 12. Next, it is put into the chamber 13 for forming an organic thin film, and FIG.
An organic thin film layer was formed in the arrangement shown in (d). At this time, the deposition mask is moved away from the substrate, and a gap D with the substrate is set.
4 (G2) was 50 μm. The distance between the evaporation source and the substrate was 50 cm (T1), the same as when the first electrode was formed.

In the chamber 13, N, N'-diphenyl-N, N'-bis (α
-Naphthyl) [1,1′-biphenyl] -4,4′-diamine (α-NPD), tris- (8-hydroxyquinolinol) aluminum (AIq ₃ ) serving also as a light emitting layer and an electron transport layer, Quinacridone (Qd) is set in a crucible-type evaporation source with a lid having a hole having a diameter of 2 mm.
The degree of vacuum in the chamber is kept on the order of 10 ^-6 Torr.

First, α-NPD as a hole transport layer was deposited. The deposition rate was set to 1 Å / sec, and 550 Å was deposited. Next, α-NPD
Was removed from immediately below the substrate, and an evaporation source containing Alq ₃ and Qd was disposed immediately below the substrate. Alq ₃ and Qd of 250
A light-emitting layer was formed by co-evaporation of Angstrom. Each deposition rate is 2 angstroms / sec (Al
q ₃ ) and 0.2 Å / sec (Qd). Next, only the deposition source containing Qd was removed from the center line of the substrate, and only Alq ₃ was deposited at 300 Å (deposition rate was 2 Å / sec) to form an electron transport layer. As described above, an organic thin film layer composed of three layers was formed.

The pattern 18 of the organic thin film layer is 142.6 μm.
m □, and the line width of the first electrode and the wiring 17 is 141.0.
A pattern slightly larger than μm was obtained (FIG. 3.2).
(E)).

After the formation of the organic thin film layer, the holder holding the substrate 1 and the deposition mask 2 was moved to the processing chamber 12 again. Next, it was placed in the second electrode forming chamber 14, and the second electrode and the wiring were formed as shown in FIG. 3.2 (c). In the chamber 14, Al, which is a second electrode and a wiring material, contains aluminum oxide (A) in advance.
l ₂ O ₃ ), placed in a crucible type evaporation source, fixed on a vertical line at the center of the substrate so that the distance from the substrate is 50 cm (equal to Tl), and the degree of vacuum in the chamber is 10
^-5 Torr level.

The vapor deposition mask 2 was brought closer to the substrate 1, the gap between them was returned to 20 μm (G1), and the holder was set at a predetermined position. Next, Al was deposited at 1000 Å at a deposition rate of 10 Å / sec to form a second electrode. Subsequently, the vapor deposition mask 2 is vapor-deposited while slowly moving (200 μm / min or less) and moving in the direction (X direction) orthogonal to the first electrode and wiring direction (Y direction) while keeping the distance from the substrate 1 constant. Two electrodes and a wiring pattern 19 were obtained. Second electrode and wiring pattern 1
9 had a line width of 141.4 μm and could be formed slightly smaller than the pattern 18 of the organic thin film layer (FIG. 3.
2 (e)).

As shown in FIG. 3.2 (e), the region where each electrode and the wiring pattern (17, 19) intersect is slightly smaller than the organic thin film layer forming region 18, and no short circuit occurs between the electrodes. A good high-definition green display could be manufactured. As described above, the organic electroluminescent element including the wiring was easily and reliably manufactured using a single mask.

Example 3 An example in which a high-definition multi-color display free from short-circuits was manufactured using a single evaporation mask will be described. Third Embodiment A third embodiment will be described with reference to FIGS.

A 15 cm × 7.5 cm glass substrate 1 is
Ultrasonic cleaning was performed with a surfactant, acetone, and isopropyl alcohol, and finally, ultrasonic cleaning was performed with pure water, followed by drying in dry nitrogen. Next, UV / ozone cleaning was performed for 5 minutes.

First, about 1500 Å of ITO was formed on a glass substrate by sputtering.
Next, the 1TO was buttered by etching to obtain a striped first electrode and a wiring having a line width of 70 μm and an interval of 30 μm (pitch: 100 μm). A substrate formed up to ITO and a deposition mask 2 (27 shown in FIG.
0μm (length) × 70μm (width) holes are 300μ pitch
m vertical pitch 900μm, arranged on a houndstooth check)
Was attached to the holder. The holder for holding the deposition mask 2 and the substrate 1 has a mechanism for precisely moving the deposition mask 2 in parallel with the substrate 1 and an adjustment mechanism for adjusting the gap with the substrate 1. 2 is provided so as to be movable on the normal line of the center of the substrate.

Using the holder mechanism, adjustment was made so that the holes of the evaporation mask overlapped the stripe wiring of 1TO, and the gap D5 (G2) between the substrate and the evaporation mask was uniform at 30 μm. Next, N, which is a hole transport layer,
N'-diphenyl-N, N'-bis (α-naphthyl)
[1,1′-biphenyl] -4,4′-diamine (α-
NPD), a green light-emitting material and an AI which is an electron transport material
q ₃ , magnesium phthalocyanine as a red light emitting material, distyryl arylene derivative as a blue light emitting material,
The second electrode and the wiring material Al were put into different molybdenum resistance heating evaporation boats, respectively, and arranged in a plane (hereinafter referred to as an evaporation plane) in a chamber, and the distance of the substrate 1 from the evaporation plane was 40 cm. Position and secure the holder.

Next, the inside of the chamber was kept at a vacuum of 10 ⁻⁵ Torr or less, and an organic thin film layer was formed in the arrangement shown in FIG. First, the vapor deposition boat containing α-NPD was moved on a vertical line in the center of the substrate 1 in the vapor deposition plane, and vapor deposition was performed at 550 Å at a vapor deposition rate of 2 Å / sec. Next, a green light-emitting material and AIq ₃ as an electron transport material were vapor-deposited from the same position at 600 angstroms (evaporation rate 3 angstroms / sec). Next, the deposition mask 2 is set to 100 μm in the X direction with respect to the substrate 1.
It was moved, and α-NPD as a hole transport material and magnesium phthalocyanine as a red light emitting material were sequentially deposited in the same manner. Further, the deposition mask is set to 100 μm in the X direction.
After being moved, α-NPD as a hole transporting material and distyryl arylene derivative as a blue light emitting material were sequentially deposited in the same manner. The three-color pixel patterns 21 obtained in this manner are almost the same size, and
Pattern (272.1 μm (vertical) × 70.8 μm) whose width (width in the X direction) is slightly larger than the line width of 70 μm
(Horizontal)). Next, the deposition mask was returned to the initial position, and the second electrode was formed. Figure 5.3
As shown in (c), the vapor deposition mask 2 was brought close to the substrate 1 so that the gap D6 (G2) between them was 15 μm. The evaporation boat containing Al was moved on the normal line of the center of the substrate, and the evaporation boat was moved at a deposition speed of 10 angstroms / sec.
0 angstrom was deposited. Next, while slowly moving the mask (200 μm / min or less) in the X direction,
Al was evaporated to obtain a second electrode and a wiring pattern 24.

The width of the second electrode and the wiring 24 is 270.9
μm, and organic thin film layer patterns 21 (green), 22
It could be formed slightly smaller than the vertical width (width in the Y direction) of (red) and 23 (blue). As shown in FIG. 5.3 (e), the size of the pattern (21, 22, 23) of the organic thin film layer depends on the respective electrodes and wirings (20 (first electrode and wiring) and 24 (second electrode and wiring). In this case, a three-color display in which the crossing of the wirings) is slightly covered, and no short circuit occurs at all, could be manufactured. Vertical of the organic thin film layer pattern (21, 22, 23),
Since the difference between the horizontal width and the width of the first electrode and the wiring and the width of the second electrode and the wiring is only 1 to 2 μm, a multi-color or full-color display with higher definition can be manufactured. As described above, using a single mask, a high-definition display that does not cause a short circuit can be easily manufactured.

[0051]

As described above, according to the present invention,
An organic electroluminescent device which does not cause short circuit, has high reliability and can achieve high definition, and a display using the same can be manufactured by a simple method.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view showing one example of a method for manufacturing an organic electroluminescent device of the present invention. FIG. 1 (a) is a schematic cross-sectional view when a hole transport layer is deposited. 1 (b) is a schematic cross-sectional view when a light-emitting layer is deposited. c) Schematic cross-sectional view during second electrode deposition

FIG. 2 is a schematic view showing an example of a method for manufacturing an organic electroluminescent device of the present invention. (1) 2 (a) Schematic top view of a vapor deposition apparatus used in Example 2 (b) Vapor deposition mask and movement of mask Schematic showing the direction

FIG. 3 is a schematic view showing an example of a method for manufacturing an organic electroluminescent device of the present invention. (2) 2 (c) Schematic cross-sectional view when forming a first electrode and a second electrode 2 (d) When depositing an organic thin film layer FIG. 2 (e) is a schematic diagram showing the formed pattern.

FIG. 4 is a schematic view showing an example of a method for manufacturing an organic electroluminescent device of the present invention. (1) 3 (a) Top view of a deposition mask used in Example 3

FIG. 5 is a schematic view showing an example of a method for manufacturing an organic electroluminescent device of the present invention. (1) 3 (b) Schematic sectional view at the time of depositing an organic thin film layer. 3 (c) Schematic sectional view at the time of forming a second electrode. FIG. 3D is a schematic view showing the formed pattern.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Substrate 2 Deposition mask 3-6 Deposition boat for resistance heating 7, 8 Boat fixing stand 11 First electrode formation chamber 12 Processing chamber 13 Organic thin film layer formation chamber 14 Second electrode formation chamber 15 Vacuum valve 16 Insertion port 17 First electrode and wiring pattern 18 Organic thin film layer forming pattern 19, 24 Second electrode and wiring pattern 20 ITO (first electrode) and wiring pattern 21 Green organic thin layer forming pattern 22 Red organic thin layer forming pattern 23 Blue organic thin layer Formation pattern L1 Distance between deposition layer and mask when forming organic thin film layer L2 Distance between deposition source and mask when forming second electrode D1, D4, D5 Distance between mask and substrate when forming organic thin film layer (G2) D2, D3 , D6 Mask-substrate distance (G1) when forming the second electrode T1, T2, T3, T4 Distance between evaporation source and substrate when forming thin film layer

────────────────────────────────────────────────── ───

[Procedure amendment]

[Submission date] March 8, 1999

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Claims

[Correction method] Change

[Correction contents]

[Claims]

[Procedure amendment 2]

[Document name to be amended] Statement

[Correction target item name] 0016

[Correction method] Change

[Correction contents]

In the manufacturing method described above, the distance Ll between the insertion plate and the evaporation source-insertion plate used when forming at least one electrode is at least one or more of a single layer or a stacked thin film layer including at least an organic electroluminescent region. Plate used for forming the substrate and distance L between the vapor deposition source and the insert plate
2. A method for manufacturing an organic electroluminescent device, which is manufactured in the same manner as in 2.

[Procedure amendment 3]

[Document name to be amended] Statement

[Correction target item name] 0029

[Correction method] Change

[Correction contents]

Next, an organic thin film layer and a second electrode (here,
Is a cathode). First, as a hole transport layer,
N, N'-diphenyl-N, N'-bis (3-methylphenyl
Enyl) [1,1'-biphenyl] -4,4'-diamid
(TPD) and tris-
(8-hydroxyquinolinol) aluminum (Alq
_Three), Magnesium Mg and silver Ag as electrode materials
With four different molybdenum resistance heating evaporation
Boats 3, 4, 5, 6 (Each boat has a direct
(With a lid with a hole of 1 mm in diameter).
I put it in Yamber. Also,Distance from evaporation source to insertion plate
SeparationHold the holder so that Ll is 50 cm
Installed in a bar, and set the degree of vacuum in the chamber to 1 × 10^-6T
 It was kept below orr.

[Procedure amendment 4]

[Document name to be amended] Statement

[Correction target item name] 0030

[Correction method] Change

[Correction contents]

Next, in the arrangement shown in FIG. 1A , TPD, which is a hole transporting material, was vapor-deposited at a thickness of 500 angstroms (evaporation rate: 0.5 to 2 angstroms / sec). The average size of the formed pattern is 2.01 mm
And a pattern larger than the line width of ITO was obtained.

[Procedure amendment 5]

[Document name to be amended] Statement

[Correction target item name] 0031

[Correction method] Change

[Correction contents]

Next, as shown in FIG.
set the deposition boat 4 that contains the q _3, AIq ₃ 50
0 angstrom evaporation (evaporation rate 0.5 to 2 angstrom / sec) was performed. The pattern size of the formed Alq ₃ was 2.02 mm □ on average, and a pattern larger than the line width of 1TO was obtained.

[Procedure amendment 6]

[Document name to be amended] Statement

[Correction target item name] 0032

[Correction method] Change

[Correction contents]

Next, as shown in FIG.
The vapor deposition boat 5 containing Ag and the vapor deposition boat 6 containing Ag were moved and arranged on a vertical line at the center of the substrate to form a second electrode. At this time, the position of the substrate was brought closer to the evaporation mask, and the gap D2 (G1) between them was set to 20 μm.

[Procedure amendment 7]

[Document name to be amended] Statement

[Correction target item name] 0036

[Correction method] Change

[Correction contents]

The holder is provided with a mechanism for precisely moving the evaporation mask 2 and a mechanism for precisely controlling the gap with the substrate 1 and the movement in a direction parallel to the substrate. Substrate 1,
The holder holding the vapor deposition mask 2 includes a transparent electrode (first electrode) forming chamber 11 shown in FIG.
The substrate is moved in a single-wafer type vapor deposition apparatus including a processing chamber 12, an organic thin film layer forming chamber 13, and a second electrode forming chamber.

[Procedure amendment 8]

[Document name to be amended] Statement

[Correction target item name] 0037

[Correction method] Change

[Correction contents]

First, the holder holding the glass substrate 1 and the vapor deposition mask 2 was put into the processing chamber 12 through the insertion port, and the processing chamber was gradually evacuated and kept at 1 × 10 ^-6 Torr. Next, the holder was moved to a high-frequency excitation ion plating chamber 11 for forming a transparent electrode (first electrode) kept at 4 × 10 ⁻⁷ Torr and set there. 2 (c) in FIG.
As shown in (2), the evaporation source was disposed immediately below the center of the substrate, and the distance T1 to the substrate was set to 50 cm. Oxygen gas pressure 1
During high frequency discharge at 0 ^-4 Torr level, metal indium (l
n) is deposited, and the deposition rate is 10 angstroms / s.
While vapor deposition is performed at ec, the vapor deposition mask 2 is kept at a constant (20 μm) while keeping the gap D3 (G1) with the substrate 1 constant.
Slowly (200 μm / min or less) in a fixed direction (Y
Direction) to obtain a transparent electrode (first electrode) of indium oxide (In ₂ O ₃ ) having a thickness of about 2000 Å and a wiring 17.

[Procedure amendment 9]

[Document name to be amended] Statement

[Correction target item name] 0038

[Correction method] Change

[Correction contents]

The size of the pattern of the first electrode and the wiring 17 is as follows:
It was 1.0 μm. Next, the deposition mask 2 was returned to the initial position, and the holder was moved to the processing chamber 12. Next, it is inserted into the organic thin film forming chamber 13 and 2 in FIG.
An organic thin film layer was formed in the arrangement shown in (d) . At this time, the deposition mask is moved away from the substrate, and a gap D with the substrate is set.
4 (G2) was 50 μm. The distance between the evaporation source and the substrate was 50 cm (T1), the same as when the first electrode was formed.

[Procedure amendment 10]

[Document name to be amended] Statement

[Correction target item name] 0041

[Correction method] Change

[Correction contents]

The pattern 18 of the organic thin film layer is 142.6 μm.
m □, and the line width of the first electrode and the wiring 17 is 141.0.
A pattern slightly larger than μm was obtained ( 2 in FIG. 3 ) .
(E) ).

[Procedure amendment 11]

[Document name to be amended] Statement

[Correction target item name] 0042

[Correction method] Change

[Correction contents]

After the formation of the organic thin film layer, the holder holding the substrate 1 and the deposition mask 2 was moved to the processing chamber 12 again. Next, it is had in the second electrode forming Chiyanba 14, to form a second electrode and the wiring in the arrangement shown in 2 (c) of FIG. In the chamber 14, Al as the second electrode and the wiring material contains aluminum oxide (A) in advance.
l ₂ O ₃ ), placed in a crucible type evaporation source, fixed on a vertical line at the center of the substrate so that the distance to the substrate is 50 cm (equal to Tl), and the degree of vacuum in the chamber is 10 cm.
^-5 Torr level.

[Procedure amendment 12]

[Document name to be amended] Statement

[Correction target item name] 0043

[Correction method] Change

[Correction contents]

The vapor deposition mask 2 was brought closer to the substrate 1, the gap between them was returned to 20 μm (G1), and the holder was set at a predetermined position. Next, Al was deposited at 1000 Å at a deposition rate of 10 Å / sec to form a second electrode. Subsequently, the deposition mask 2 is attached to the substrate 1
The second electrode and the wiring pattern 19 were obtained while slowly (200 μm / min or less) and moving in the direction (x direction) perpendicular to the first electrode and the wiring direction (Y direction) while keeping the distance between the first electrode and the wiring. . The size of the second electrode and the wiring pattern 19 was 141.4 μm in line width, and could be formed slightly smaller than the pattern 18 of the organic thin film layer ( FIG. 3 ) .
2 (e) ).

[Procedure amendment 13]

[Document name to be amended] Statement

[Correction target item name] 0044

[Correction method] Change

[Correction contents]

As shown in FIG . 3E , the region where each electrode and the wiring pattern (17, 19) intersect is slightly smaller than the region 18 where the organic thin film layer is formed, and no short circuit occurs between the electrodes. A good high-definition green display could be manufactured. As described above, the organic electroluminescent element including the wiring was easily and reliably manufactured using a single mask.

[Procedure amendment 14]

[Document name to be amended] Statement

[Correction target item name] 0047

[Correction method] Change

[Correction contents]

First, about 1500 Å of ITO was formed on a glass substrate by sputtering.
Next, the 1TO was buttered by etching to obtain a striped first electrode and a wiring having a line width of 70 μm and an interval of 30 μm (pitch: 100 μm). A substrate formed up to ITO and a deposition mask 2 (27 ) shown in FIG.
0μm (length) × 70μm (width) holes are 300μ pitch
m vertical pitch 900μm, arranged on a houndstooth check)
Was attached to the holder. The holder for holding the deposition mask 2 and the substrate 1 has a mechanism for precisely moving the deposition mask 2 in parallel with the substrate 1 and an adjustment mechanism for adjusting the gap with the substrate 1. 2 is provided so as to be movable on the normal line of the center of the substrate.

[Procedure amendment 15]

[Document name to be amended] Statement

[Correction target item name] 0049

[Correction method] Change

[Correction contents]

Next, the inside of the chamber is set at 10 ⁻⁵ T rr.
Maintaining the vacuum below, to form an organic thin film layer in the arrangement shown in 3 (b) of FIG. First, the vapor deposition boat containing α-NPD was moved on a vertical line in the center of the substrate 1 in the vapor deposition plane, and vapor deposition was performed at 550 Å at a vapor deposition rate of 2 Å / sec. Next, a green light-emitting material and AIq ₃ as an electron transport material were vapor-deposited from the same position at 600 angstroms (evaporation rate 3 angstroms / sec).
Next, the vapor deposition mask 2 is placed on the substrate 1 by 100 μm in the X direction.
Then, α-NPD as a hole transporting material and magnesium phthalocyanine as a red light emitting material were sequentially deposited in the same manner. Further, the deposition mask is set to 100 μm in the X direction.
Then, α-NPD, which is a hole transport material, and distyryl arylene derivative, which is a blue light emitting material, were sequentially vapor-deposited in the same manner. The three-color pixel patterns 21 obtained in this manner are of substantially the same size,
A pattern (272.1 μm (length) × 70.8 μm) whose width (width in the x direction) is slightly larger than the O line width of 70 μm
(Horizontal)). Next, the deposition mask was returned to the initial position, and the second electrode was formed. 5 in FIG.
As shown in (c) , the vapor deposition mask 2 was brought close to the substrate 1 so that the gap D6 (G2) between them was 15 μm. The evaporation boat containing Al was moved on the normal line of the center of the substrate, and the evaporation boat was moved at a deposition speed of 10 angstroms / sec.
0 angstrom was deposited. Next, while slowly moving the mask (200 μm / min or less) in the X direction,
Al was evaporated to obtain a second electrode and a wiring pattern 24.

[Procedure amendment 16]

[Document name to be amended] Statement

[Correction target item name] 0050

[Correction method] Change

[Correction contents]

The width of the second electrode and the wiring 24 is 270.9
μm, and organic thin film layer patterns 21 (green), 22
It could be formed slightly smaller than the vertical width (width in the Y direction) of (red) and 23 (blue). As shown in FIG. 5D, the size of the pattern (21, 22, 23) of the organic thin film layer depends on the size of each electrode and wiring (20 (first electrode and wiring), 24 (second electrode and wiring). In this case, a three-color display in which the crossing of the wirings) is slightly covered, and no short circuit occurs at all, could be manufactured. Vertical of the organic thin film layer pattern (21, 22, 23),
Since the difference between the horizontal width and the width of the first electrode and the wiring and the width of the second electrode and the wiring is only 1 to 2 μm, a multi-color or full-color display with higher definition can be manufactured. . As described above, using a single mask, a high-definition display that does not cause a short circuit can be easily manufactured.

Claims (6)

[Claims] 1. A pair of electrodes (a first electrode and a second electrode) formed on a substrate and opposed to each other, and at least electroluminescence (hereinafter sometimes abbreviated as EL) sandwiched between the electrodes. In a method of manufacturing an organic electroluminescent device including a region using a vacuum deposition method, a method of forming at least one electrode includes: a distance between a substrate and an insertion plate having at least a hole for forming a pattern (substrate-
When Gl forms at least one or more single-layer or laminated thin-film layers including at least the organic electroluminescent region sandwiched between the first electrode and the second electrode, the substrate-insert plate A method for manufacturing an organic electroluminescent device, wherein the device is manufactured such that Gl <G2 with respect to a distance G2. 2. The manufacturing method according to claim 1, wherein the distance Ll between the insertion plate and the vapor deposition source and the insertion plate used for forming at least one electrode is a single-layer or laminated thin film including at least an organic electroluminescent region. A method for manufacturing an organic electroluminescent device, wherein the organic EL device is manufactured in the same manner as an insertion plate and an insertion plate-substrate distance L2 used for forming at least one layer. 3. The method for manufacturing an organic electroluminescent device according to claim 1, wherein after the electrodes are formed, the insert plate is moved or vibrated in the direction in which the wiring extends while keeping the insertion plate parallel to the substrate. A method for manufacturing an organic electroluminescent device, wherein a wiring material is formed by performing a plurality of operations of vapor-depositing a wiring material or displacing the wiring material in a direction in which the wiring material is elongated, and forming the wiring. 4. The organic electroluminescence used in the method according to claim 1, further comprising a mechanism for moving the position of the substrate on a vertical line of the substrate so that the distance between the substrate and the insertion plate is variable. Device manufacturing equipment. 5. The method according to claim 1, wherein a mechanism is provided for moving the position of the insertion plate on a vertical line at the center of the substrate so that the distance between the substrate and the insertion plate is variable. Manufacturing equipment for electroluminescent devices. 6. The method according to claim 1, wherein the substrate is moved to a specific position (ab.
c. ), The material forming each layer constituting the organic electroluminescent element is deposited from a point (ABC,...) On a vertical line at the center of the substrate. In the manufacturing apparatus used in the method for manufacturing an organic electroluminescent device described above, the distance (Na, Nb, Nc,...) Between the substrate position (a, b, c...) And the deposition source position (A, B, C,.
Wherein the evaporation source or the substrate (and the insertion plate) can be moved on a vertical line at the center of the substrate so that the size can be set to an arbitrary size.