JPH11243161A - Integrated circuit module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To adequately prevent RF signals from leaking out to a bias circuit and following circuits, while materializing an integrated circuit module to be miniaturized in size and simplified in structure. SOLUTION: A dielectric body 103 is constituted in a capacitor is filled up in a space (pin insertion hole) between a connecting conductor (connecting pin 101) and a package 100 so as to surround the connecting conductor 101, whereby the dielectric body 103 functions also as a member for hermetic sealing, and the dielectric body 103 functions both as a capacitor for restraining RF signals from leaking out and as a hermetic sealing member and is conductive so that an integrated circuit module of this kind contributes to simplifying the constitution and stabilizing the characteristics.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an MMIC (Monolithic Microwave Integrated) packaged in a package.
Circuit) or MIC (Microwave Integrated Cir)
The present invention relates to an integrated circuit module such as a cuit) and, more particularly, to an improvement of such a circuit module in which the size of the integrated circuit module is reduced and the leakage of an RF signal from a bias circuit of the integrated circuit module to a subsequent circuit section is suppressed.

[0002]

2. Description of the Related Art FIG. 5 is a circuit diagram showing a one-stage amplifier constituted by a GaAs substrate as an example of an MMIC. In FIG. 5, a FET 2 which is a semiconductor element is formed on a GaAs substrate 1 at the center in the same figure. This F
An input matching circuit 3 having an input terminal 11 in a stage preceding ET2.
However, output matching circuits 4 each having an output terminal 12 are arranged at the subsequent stage. This input matching circuit 3 and FET 2
A gate bias inductor 5 is connected to the connection middle point (gate of the FET 2) G, and a drain bias inductor 8 is connected to the connection middle point (drain of the FET 2) D between the FET 2 and the output matching circuit 4. It is connected. The other end of the gate bias inductor 5 is connected to a gate bias terminal 7.
And grounded (connected to a common ground metal on the GaAs substrate 1) through a gate bias bypass capacitor 6. Similarly, the other end of the drain bias inductor 8 is connected to the drain bias terminal 10 while the drain bias bypass capacitor 9 is connected.
(Connected to a common ground metal on the GaAs substrate 1). In the case of an MMIC, these semiconductor elements, circuit elements, and terminals are all formed on a GaAs substrate by a semiconductor manufacturing technique.

In the case of the MMIC, the FET 2 is a GaAs substrate, but the other elements except the capacitor are formed as a conductive film pattern on an alumina ceramic substrate.
On the other hand, the capacitor is formed by die bonding a chip type on an alumina ceramic substrate.

In general, in this type of circuit module, a bias circuit is provided by an LPF (Low Pa) using a series inductor and a parallel capacitor as shown in the example of FIG.
ssFilter) is often used. Usually the inductor is a spiral coil or meander line
a A conductive pattern is formed on an As substrate or an alumina ceramic substrate.

In the case of the MMIC, the capacitor is generally formed by sandwiching a high dielectric layer between conductive film patterns on a GaAs substrate. In the case of the MIC, a chip type capacitor is die-bonded to an alumina ceramic substrate. Formed.

In the semiconductor integrated circuit module configured as described above, when the required frequency increases, the lumped constant element as described above exhibits a behavior that cannot be considered to function as a single element. . That is, the inductor has an effect that it is not a single element of the inductor due to the parasitic capacitance. For this reason, a bypass circuit configuration as shown in FIG. 6 is often employed.

FIG. 6 is a circuit diagram showing a bypass circuit generally adopted for the circuit of FIG. The circuit in FIG. 6 is a bias circuit using a distributed constant line 110 having a required frequency and a quarter wavelength. In this bias circuit, by short-circuiting (grounding) the other end of the distributed constant line 110 with the bypass capacitor 6, the impedance seen from the gate side of the FET can be made theoretically infinite.

[0008]

However, in the bias circuit of FIG. 6, the higher the frequency, the more the RF signal is radiated from the circuit, and the terminal 7 (or FIG. 5) does not pass through the bias circuit. There is a problem that an RF signal is often transferred directly to the terminal 10).

FIG. 7 is a circuit diagram showing an example of a known MMIC disclosed in Japanese Patent Laying-Open No. 2-105701. 7, parts corresponding to those in FIG. 5 described above are indicated using the same reference numerals. In the MMIC disclosed in the publication, a GaAs substrate 1 has a semiconductor element FET2 located at the center in FIG.
Are formed. The input section (I
N), and an output matching circuit 4 having an output section (OUT) is arranged at a subsequent stage. The midpoint of connection between this input matching circuit 3 and FET2 (the gate of FET2)
G) G has a gate bias inductor 5 and F
A drain bias inductor 8 is connected to a connection point D between the ET 2 and the output matching circuit 4 (drain of the FET 2). The other end of the gate bias inductor 5 is connected to a gate bias terminal 7 while being grounded through a gate bias bypass capacitor 6 (GaAs).
Connected to a common ground metal 15 on the substrate 1). The other end of the drain bias inductor 8 is connected to the drain bias terminal 10 while being grounded through the drain bias bypass capacitor 9 (the GaAs substrate 1).
Connected to the upper common ground metal 15).

The above is the circuit configuration based on the electrical characteristics, but the bias circuit section 13 corresponding to the above-described distributed constant line is used.
As a physical configuration of (14), a configuration is adopted in which a dielectric layer having a high dielectric constant is provided on the GaAs substrate 1 and a pattern of the inductor 5 (8) is formed directly thereon. Thus, the bypass capacitor 6 (9) parasitic on the inductor 5 (8) is effectively used to function as a low-pass filter.

[0011] Japanese Patent Laid-Open No. 2-1057 described above with reference to FIG.
Also in the example of the MMIC disclosed in Japanese Patent Publication No. 01, the higher the frequency, the more the RF signal is radiated from the circuit, so that the terminal 7 (or the terminal 10) does not pass through the bias circuit.
However, there is a problem that the direct transfer of the RF signal to the mobile phone increases. As a result, there is a possibility that the circuit may exhibit undesirable characteristics such as oscillation or remarkable change in characteristics due to cooperation with the impedance connected after the bias circuit.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-described circumstances, and has been made to reduce the size and simplification of the circuit, sufficiently suppress the leakage of the RF signal to the bias circuit and thereafter, and realize this type of integration. An object is to stabilize the characteristics of a circuit module.

[0013]

In order to solve the above-mentioned problems, an integrated circuit module according to the present invention has the following characteristic configuration.

(1) An integrated circuit module in which an integrated circuit is enclosed in a package, wherein a connection terminal for obtaining electrical continuity between a predetermined terminal portion of the integrated circuit and the outside of the package is provided. And a dielectric provided between the connection conductor and the package over a predetermined portion of a path for leading the connection conductor from a predetermined terminal portion of the integrated circuit to the outside of the package. An integrated circuit module wherein the dielectric is formed as a component of a capacitor as a circuit element in a circuit for preventing an RF signal from leaking outside through the connection conductor.

(2) A dielectric constituting a component of the capacitor is disposed so as to be buried around the connection conductor, and the capacitor cooperates with a predetermined lumped constant circuit section in the preceding stage. The integrated circuit module according to (1), wherein the integrated circuit module occupies a position as a last-stage filter element for forming a low-pass filter.

(3) The dielectric constituting a component of the capacitor is disposed so as to be buried around the connecting conductor, and the capacitor is located in front of itself and has a quarter wavelength of a required frequency. The integrated circuit module according to (1), which is connected to the distributed constant line section.

(4) The integrated circuit module according to (1), wherein the dielectric constituting the component of the capacitor is a glass having a high dielectric constant.

(5) The integrated circuit module according to (1), wherein the dielectric material constituting the capacitor is a ceramic having a high dielectric constant.

(6) The dielectric constituting the component of the capacitor is disposed so as to be buried around the bias terminal of the package, and the capacitor leaks from the distributed constant line located in the preceding stage of the capacitor. The integrated circuit module according to (1), wherein the signal is connected to ground.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be clarified by describing in detail embodiments of the present invention with reference to the drawings. FIG. 1 is a plan view showing a state in which most of a cover of an MMIC module which is an embodiment of an integrated circuit module of the present invention is cut off. FIG. 2 shows the MMI of FIG.
It is a sectional side view which shows the state which cut | disconnected the C module by the ee line. In FIGS. 1 and 2, the same reference numerals are given to the same circuit portions as the MMIC modules in FIGS. 5 and 7 in terms of function.

In FIGS. 1 and 2, a GaAs substrate 1 has a semiconductor element, an FET, located at the center as shown in FIG.
2 are formed. Previous stage of this FET2 (gate G)
Is formed with an input matching circuit 3 having an input terminal 11, and a subsequent stage (drain D) is formed with an output matching circuit 4 having an output terminal 12. GaAs is placed on the gate G of FET2.
Gate bias inductor 5 formed on substrate 1
Are connected at one end. Similarly, one end of a drain bias inductor 8 formed on the GaAs substrate 1 is connected to the drain D of the FET 2. The other end of the gate bias inductor 5 is connected to the gate bias terminal 7, and the other end of the drain bias inductor 8 is connected to the drain bias terminal 10.

The above-mentioned gate bias terminal 7 has a connection conductor (connection pin) 101 connected thereto by a metal wire.
Through the outside of the package 100 (e.g., other circuits, etc.).
The drain bias terminal 10 is configured to be electrically connected to the outside of the package 100 through a connection conductor (connection pin) 102 connected to the drain bias terminal 10 by a metal wire. Note that a cover 120 is provided on the package 100.

In the MMIC module shown in FIGS. 1 and 2,
In particular, the connecting conductors (connecting pins) 101 and 102 extend from the gate bias terminal 7 and the drain bias terminal 10 to the outside of the package 100, respectively, over a predetermined portion of the path (in the illustrated example, the insertion hole portion). ), And dielectrics 103 and 104 are provided between the connecting conductors (connecting pins) 101 and 102 and the package 100 (insertion holes), and these dielectrics 103 and 104 are connected by the above-mentioned connection. It is formed so as to constitute a component of a capacitor as a circuit element in a circuit that functions to prevent an RF signal from leaking outside through conductors (connection pins) 101 and 102.

In the embodiments shown in FIGS. 1 and 2, high dielectric constant glass or ceramic is used as the dielectrics 103 and 104 constituting the components of the capacitor. The dielectrics 103 and 104 constituting the components of the capacitor are disposed so as to be buried around the bias terminals of the package 100. The capacitor having the dielectrics 103 and 104 as an element cooperates with a predetermined lumped-constant circuit section in the preceding stage to occupy the position of a final-stage filter element for constituting the low-pass filter.

To describe the MMIC module of FIG. 1 in more detail, the inductor 5 is provided with the GaAs substrate 1 described above.
It is formed as a spiral coil or an amenda line with a conductive film pattern thereon, and functions as a series inductor of an LPF. The capacitor which is a component of the LPF is the above-mentioned capacitor.
The value (specification) of the inductor 5 is selected so as to form a distributed constant line having a quarter wavelength of a required frequency in the MMIC module including a lead line from the contact G to the connection conductor (connection pin) 101. I have.

Therefore, the above-mentioned capacitor is located at a preceding stage of the MMIC module and is electrically connected to the distributed constant line section having a quarter wavelength of the required frequency in the MMIC module. This capacitor functions to short-circuit the other end of the distributed constant line section having a quarter wavelength of the required frequency (connect to a common ground conductor). For this reason, the aforementioned RF
Regarding signal emission or leakage of the RF signal from the inductor 5, the RF signal surely passes through the capacitor and is absorbed by the capacitor, so that leakage to the subsequent stage can be suppressed.

FIG. 3 is a schematic plan view showing a state where most of a cover of an MMIC module according to another embodiment of the integrated circuit module of the present invention is cut off. FIG. 4 is a side sectional view showing a state where the MMIC module of FIG. 3 is cut along a roll line. In FIGS. 3 and 4, circuit portions having the same configuration as the MMIC module in FIGS. 1 and 2 described above are not shown in detail, and circuit portions having the same function are denoted by the same reference numerals. , And detailed description of those units will be omitted.

In the embodiment shown in FIGS. 3 and 4, FIG.
And the connection conductors (connection pins) 101 and 102 of the MMIC module shown in FIG.
These connection conductors (connection pins) are arranged in the thickness direction with respect to the extension of the MIC module.
101 and 102 are arranged sideways (as shown in the figure, along the spread of the flat MMIC module as a whole). Other components and operations are the same as those of the embodiment shown in FIGS.

As understood from the above description of the MMIC module of FIGS. 1 and 2 and the MMIC module of FIGS.
Rather than providing a capacitor for the bias circuit on the MIC or on the MIC, a capacitor is provided on a connection conductor (connection pin) for establishing conduction between the bias circuit portion of the package and the outside, so that RF to the bias circuit and thereafter can be achieved. Signal leakage can be sufficiently suppressed, and the characteristics of this type of integrated circuit module can be stabilized.

In this type of integrated circuit module, MM
It is indispensable to form a hermetically sealed package in order to prevent a chemical change of the GaAs substrate of IC or MIC, and a connection conductor (connection pin) for applying a bias is also an essential element. Between the connection conductor (connection pin) and the package (pin insertion hole), a dielectric constituting a component of the capacitor is filled and embedded so as to surround the connection conductor. The body also functions as a member for hermetic sealing.
Having both the function of suppressing the leakage of the F signal and the function of hermetic sealing contributes to both simplification of the configuration and stabilization of characteristics as an integrated circuit module of this kind.

[0031]

As described above, according to the present invention, it is possible to reduce the size and simplification of the circuit and to improve the RF
An integrated circuit module in which signal leakage is sufficiently suppressed and characteristics are stabilized can be provided.

[Brief description of the drawings]

FIG. 1 is a plan view showing a state where most of a cover of an MMIC module which is an embodiment of an integrated circuit module of the present invention is cut off.

FIG. 2 is a side sectional view showing a state where the MMIC module of FIG. 1 is cut along the line II.

FIG. 3 is a schematic plan view showing a state where most of a cover of an MMIC module which is another embodiment of the integrated circuit module of the present invention is cut off.

FIG. 4 is a side sectional view showing a state where the MMIC module of FIG. 3 is cut along a roll line.

FIG. 5 is a circuit diagram showing a one-stage amplifier constituted by a GaAs substrate, which is an example of the MMIC.

FIG. 6 is a circuit diagram showing a bypass circuit generally adopted for the circuit of FIG. 5;

FIG. 7 is a circuit diagram showing an example of a known MMIC.

[Explanation of symbols]

 Reference Signs List 1 GaAs substrate 2 FET 3 input matching circuit 4 output matching circuit 5 inductor 6 bypass capacitor 7 gate bias terminal 8 inductor 9 bypass capacitor 10 drain bias terminal 11 input terminal 12 output terminal 13 bias circuit section 14 bias circuit section 15 ground metal DESCRIPTION OF SYMBOLS 100 Package 101 Connection conductor (connection pin) 102 Connection conductor (connection pin) 103 Dielectric 104 Dielectric 120 Cover

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁶ Identification code FI H01P 5/08 H01L 29/80 G H03F 3/60

Claims (6)

[Claims] An integrated circuit module in which an integrated circuit is enclosed in a package, a connection conductor for obtaining electrical continuity between a predetermined terminal of the integrated circuit and the outside of the package, A dielectric provided between the connection conductor and the package over a predetermined portion of a path leading out of the connection conductor from a predetermined terminal portion of the integrated circuit to the outside of the package; Further, the dielectric is formed so as to form a component of a capacitor as a circuit element in a circuit for preventing an RF signal from leaking outside through the connection conductor. Integrated circuit module. 2. A dielectric constituting a component of the capacitor is disposed so as to be buried around the connection conductor, and the capacitor cooperates with a predetermined lumped-constant circuit section at a preceding stage to form the low-pass capacitor. 2. The integrated circuit module according to claim 1, wherein the integrated circuit module is configured to occupy a position as a last-stage filter element for forming a filter. 3. A capacitor constituting a component of the capacitor is disposed so as to be buried around the connection conductor, and the capacitor is located in front of itself and has a required frequency of one.
2. The integrated circuit module according to claim 1, wherein the integrated circuit module is connected to a 定 数 wavelength distributed constant line section. 4. A high-permittivity glass as a dielectric constituting a component of said capacitor.
An integrated circuit module as described. 5. The integrated circuit module according to claim 1, wherein the dielectric constituting the component of the capacitor is a high dielectric constant ceramic. 6. A dielectric constituting a component of said capacitor is disposed so as to be buried around a bias terminal of said package, and said capacitor leaks from an RF signal leaking from a distributed constant line portion located in front of itself. 2. The integrated circuit module according to claim 1, wherein the module is connected to ground.