JPH11243072A - Rising liquid at end of polishing of semiconductor substrate and rinsing method using the liquid - Google Patents
Rising liquid at end of polishing of semiconductor substrate and rinsing method using the liquidInfo
- Publication number
- JPH11243072A JPH11243072A JP4545098A JP4545098A JPH11243072A JP H11243072 A JPH11243072 A JP H11243072A JP 4545098 A JP4545098 A JP 4545098A JP 4545098 A JP4545098 A JP 4545098A JP H11243072 A JPH11243072 A JP H11243072A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- liquid
- rinsing
- semiconductor substrate
- rinsing liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、研磨装置により半
導体基板の表面を研磨し、その研磨終了時にこの研磨装
置において半導体基板の表面をリンスするリンス液及び
これを用いたリンス法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a rinsing liquid for polishing the surface of a semiconductor substrate by a polishing apparatus, and rinsing the surface of the semiconductor substrate in the polishing apparatus at the end of the polishing, and a rinsing method using the same. .
【０００２】[0002]
【従来の技術】単結晶インゴットから切出されてスライ
スされたシリコンウェーハに代表される半導体基板は、
機械研磨（ラッピング）、化学エッチング等の工程を経
た後、機械的化学的研磨（メカノケミカルポリッシン
グ）が行われる。この最終研磨の機械的化学的研磨工程
において、保持具に取付けたシリコンウェーハを回転定
盤上に貼付けたポリエステルのフェルト、ラミネート等
の柔らかい研磨用パッドに押付け、研磨液を滴下しなが
ら研磨用パッドを回転することにより、ウェーハ表面を
鏡面状に研磨する。この研磨液には、例えば約５０ｎｍ
の粒径を有するＳｉＯ2の微粉からなる砥粒を水酸化ナ
トリウム（ＮａＯＨ）水溶液に溶かした研磨液が用いら
れる。ここで砥粒を水酸化ナトリウム水溶液に溶かして
研磨液を調製する理由は、第一にＮａＯＨのＯＨ基をウ
ェーハのＳｉと反応させて酸化シリコンを生成し、これ
をＳｉＯ2の微粉により削り取ってウェーハの平坦度を
高めるためであり、第二に研磨液のｐＨを高め、ＯＨ-
イオンによりＳｉＯ2粒子同士を反発させ、粒子の凝集
を防ぐためである。これまで、研磨液による研磨が終了
に近づくと、研磨液の供給を停止すると同時に、ウェー
ハ表面から砥粒を除去するためにリンス液を供給してい
た。従来、このリンス液として超純水が用いられ、リン
ス時にはこの定盤上の研磨用パッドに超純水を供給して
いた。2. Description of the Related Art A semiconductor substrate typified by a silicon wafer cut and sliced from a single crystal ingot is:
After passing through steps such as mechanical polishing (lapping) and chemical etching, mechanical chemical polishing (mechanochemical polishing) is performed. In the mechanical and chemical polishing step of the final polishing, the silicon wafer attached to the holder is pressed against a soft polishing pad such as a polyester felt or a laminate stuck on a rotary platen, and the polishing pad is dropped while the polishing liquid is dropped. Is rotated to polish the wafer surface to a mirror surface. This polishing liquid contains, for example, about 50 nm.
A polishing liquid is used in which abrasive grains made of fine powder of SiO 2 having a particle size of 1 are dissolved in an aqueous solution of sodium hydroxide (NaOH). Here, the reason for preparing the polishing solution by dissolving the abrasive grains in an aqueous sodium hydroxide solution is that firstly, the OH group of NaOH reacts with Si of the wafer to generate silicon oxide, which is scraped off with fine powder of SiO 2. Secondly, the pH of the polishing solution is increased to increase the flatness of the wafer, and the OH −
This is because ions repel the SiO 2 particles to prevent aggregation of the particles. Heretofore, when the polishing with the polishing liquid has come to an end, the supply of the polishing liquid has been stopped and, at the same time, the rinsing liquid has been supplied to remove the abrasive grains from the wafer surface. Conventionally, ultrapure water has been used as the rinsing liquid, and during rinsing, ultrapure water has been supplied to the polishing pad on the surface plate.
【０００３】[0003]
【発明が解決しようとする課題】しかし、従来の超純水
によるリンス法には、次の問題点がある。 研磨用パッド上に残留しているスラリー状の研磨液
が超純水によって希釈されると、研磨液のｐＨが中性付
近まで下がり、砥粒が分散状態を保持できなくなって凝
集するとともにウェーハ表面に付着して残留しやすくな
る。 この研磨液中で凝集した砥粒は、ｐＨの中性付近へ
の低下でウェーハ表面と相互に作用して、これによりウ
ェーハ表面にマイクロスクラッチ、ダメージ等を生じる
不都合がある。 更にウェーハ表面に砥粒が残留した場合には、研磨
装置から取外した後の洗浄工程でウェーハ表面にピット
が形成される。However, the conventional rinsing method using ultrapure water has the following problems. When the slurry-like polishing liquid remaining on the polishing pad is diluted with ultrapure water, the pH of the polishing liquid drops to near neutrality, and the abrasive grains cannot maintain a dispersed state and agglomerate, and the wafer surface is aggregated. To adhere to and remain. The abrasive grains agglomerated in the polishing liquid interact with the wafer surface due to a decrease in pH to near neutrality, thereby causing micro-scratch, damage and the like on the wafer surface. Further, when abrasive grains remain on the wafer surface, pits are formed on the wafer surface in a cleaning step after removal from the polishing apparatus.
【０００４】本発明の目的は、研磨終了時に研磨液中の
砥粒を半導体基板表面に凝集、付着させず、かつ研磨用
パッドから速やかに除去し、これにより基板表面にマイ
クロスクラッチ、ピット、ダメージ及び汚染を生じさせ
ない半導体基板の研磨時のリンス液及びこれを用いたリ
ンス法を提供することにある。An object of the present invention is to remove abrasive grains in a polishing liquid from the polishing pad without aggregating and adhering to the surface of the semiconductor substrate at the end of polishing, thereby quickly removing micro scratches, pits, and damage on the substrate surface. Another object of the present invention is to provide a rinsing liquid for polishing a semiconductor substrate which does not cause contamination and a rinsing method using the same.
【０００５】[0005]
【課題を解決するための手段】請求項１に係る発明は、
図１に示すように半導体基板１６の表面の研磨終了時に
半導体基板１６の表面をリンスするリンス液１９におい
て、酸化剤を含有し、酸化還元電位が１０ｍＶ以上であ
ることを特徴とする半導体基板の研磨終了時のリンス液
である。請求項２に係る発明は、請求項１に係る発明で
あって、アルカリを更に含有し、ｐＨが８．０以上であ
るリンス液である。請求項３に係る発明は、請求項１又
は２に係る発明であって、分散剤を更に含有するリンス
液である。The invention according to claim 1 is
As shown in FIG. 1, a rinsing liquid 19 for rinsing the surface of the semiconductor substrate 16 at the end of polishing the surface of the semiconductor substrate 16 contains an oxidizing agent and has an oxidation-reduction potential of 10 mV or more. This is the rinse liquid at the end of polishing. A second aspect of the present invention is the rinsing solution according to the first aspect, further comprising an alkali and having a pH of 8.0 or more. The invention according to claim 3 is the invention according to claim 1 or 2, which is a rinse liquid further containing a dispersant.
【０００６】請求項４に係る発明は、図１に示すように
研磨装置１０により半導体基板１６の表面を研磨し、そ
の研磨終了時に研磨装置１０において半導体基板１６の
表面をリンスする方法において、酸化剤を含有し、酸化
還元電位が１０ｍＶ以上であるリンス液１９により半導
体基板１６をリンスする方法である。請求項５に係る発
明は、請求項４に係る発明であって、リンス液１９がア
ルカリを更に含有し、そのｐＨが８．０以上である研磨
方法である。請求項６に係る発明は、請求項４又は５に
係る発明であって、リンス液１９が分散剤を更に含有す
る研磨方法である。According to a fourth aspect of the present invention, there is provided a method for polishing a surface of a semiconductor substrate by a polishing apparatus as shown in FIG. This is a method of rinsing the semiconductor substrate 16 with a rinsing liquid 19 containing an agent and having a redox potential of 10 mV or more. The invention according to claim 5 is the polishing method according to claim 4, wherein the rinsing liquid 19 further contains an alkali and the pH thereof is 8.0 or more. The invention according to claim 6 is the polishing method according to claim 4 or 5, wherein the rinsing liquid 19 further contains a dispersant.
【０００７】請求項１及び４に係る発明によれば、リン
ス液が酸化剤を含み、所定の酸化還元電位を有すると、
リンス初期に半導体基板の表面に酸化膜が形成され、こ
の酸化膜は研磨後の基板の活性な表面を保護する。即
ち、従来砥粒の凝集により基板表面に生じていたマイク
ロスクラッチの発生、不純物金属によるシリサイドの形
成、ダメージの発生をこの酸化膜は抑制する。請求項２
及び５に係る発明によれば、リンス液が酸化剤に加えて
更にアルカリを含むと、リンス液の供給によってもこれ
までの高いｐＨを低下させずに維持し、研磨液中の砥粒
の凝集を抑制する。またアルカリの添加により、酸化剤
の酸化力を高める効果もある。請求項３及び６に係る発
明によれば、リンス液が酸化剤に加えて更に分散剤を含
むか、或はリンス液が酸化剤及びアルカリに加えて更に
分散剤を含むと、研磨液中の砥粒を分散させ、その凝集
を抑制する。According to the first and fourth aspects of the present invention, when the rinsing liquid contains an oxidizing agent and has a predetermined oxidation-reduction potential,
An oxide film is formed on the surface of the semiconductor substrate at the initial stage of rinsing, and this oxide film protects the active surface of the polished substrate. That is, the oxide film suppresses the occurrence of micro-scratch, the formation of silicide due to the impurity metal, and the occurrence of damage which have conventionally occurred on the substrate surface due to the aggregation of abrasive grains. Claim 2
According to the inventions according to (5) and (5), when the rinsing liquid further contains an alkali in addition to the oxidizing agent, even if the rinsing liquid is supplied, the previously high pH is maintained without lowering, and the abrasive particles in the polishing liquid are aggregated. Suppress. The addition of the alkali also has the effect of increasing the oxidizing power of the oxidizing agent. According to the third and sixth aspects of the present invention, when the rinsing liquid further contains a dispersant in addition to the oxidizing agent, or when the rinsing liquid further contains a dispersing agent in addition to the oxidizing agent and the alkali, the polishing liquid contains Disperse abrasive grains and suppress their aggregation.
【０００８】[0008]
【発明の実施の形態】本発明のリンス液でリンスされる
半導体基板は、主としてシリコンウェーハである。その
他の基板としてＧａＡｓ、ＩｎＰなどのウェーハが挙げ
られる。このリンス液に含まれる酸化剤としては過酸化
水素水、オゾン水等が挙げられる。リンス液中の酸化剤
の含有量は、リンス液の酸化還元電位が１０ｍＶ以上に
なるように決められる。この酸化剤によりリンス液の酸
化還元電位が１０ｍＶに満たない場合には、酸化剤の酸
化力が不十分となる。好ましい酸化還元電位は３０〜１
５０ｍＶである。またリンス液に含まれるアルカリとし
ては水酸化アンモニム（ＮＨ4ＯＨ）、水酸化カリウム
（ＫＯＨ）、水酸化ナトリウム（ＮａＯＨ）、アミン類
等が挙げられる。リンス液中のアルカリの含有量は、リ
ンス液のｐＨが８．０以上になるように決められる。こ
のアルカリによりリンス液のｐＨが８．０に満たない場
合には、リンス時に希釈される研磨液のｐＨが中性に近
づき、砥粒の凝集を生じるようになる。好ましいｐＨは
９．０〜１０．５である。更にリンス液に含まれる分散
剤としてはキシレン、ピロリン酸ナトリウム、ヘキサメ
タリン酸ナトリウム、リン酸三ナトリウム等が挙げられ
る。リンス液中の分散剤の含有量は０．００１〜５０ミ
リｍｏｌ／Ｌの範囲から決められる。BEST MODE FOR CARRYING OUT THE INVENTION A semiconductor substrate rinsed with a rinsing liquid according to the present invention is mainly a silicon wafer. Other substrates include wafers such as GaAs and InP. Examples of the oxidizing agent contained in the rinsing liquid include hydrogen peroxide water, ozone water, and the like. The content of the oxidizing agent in the rinsing liquid is determined so that the oxidation-reduction potential of the rinsing liquid is 10 mV or more. When the oxidation-reduction potential of the rinsing liquid is less than 10 mV by this oxidizing agent, the oxidizing power of the oxidizing agent becomes insufficient. The preferred oxidation-reduction potential is 30 to 1
50 mV. Examples of the alkali contained in the rinsing liquid include ammonium hydroxide (NH 4 OH), potassium hydroxide (KOH), sodium hydroxide (NaOH), and amines. The alkali content in the rinsing liquid is determined so that the pH of the rinsing liquid is 8.0 or more. If the pH of the rinsing liquid is less than 8.0 due to the alkali, the pH of the polishing liquid diluted at the time of rinsing becomes close to neutral, and agglomeration of abrasive grains occurs. The preferred pH is between 9.0 and 10.5. Further, examples of the dispersant contained in the rinsing liquid include xylene, sodium pyrophosphate, sodium hexametaphosphate, and trisodium phosphate. The content of the dispersant in the rinsing liquid is determined from the range of 0.001 to 50 mmol / L.
【０００９】本発明のリンス液を用いて半導体基板をリ
ンスするときの研磨方法には、片面研磨方法と両面研磨
方法がある。図１に片面研磨装置１０を示す。この研磨
装置１０は回転定盤１１と基板保持具１２を備える。回
転定盤１１は大きな円板であり、その底面中心に接続さ
れたシャフト１５によって回転する。回転定盤１１の上
面には研磨用パッド１３が貼付けられる。基板保持具１
２は加圧ヘッド１２ａとこれに接続して加圧ヘッド１２
ａを回転させるシャフト１２ｂからなる。加圧ヘッド１
２ａの下面には研磨プレート１４が取付けられる。研磨
プレート１４の下面には複数枚の半導体基板１６が貼付
けられる。回転定盤１１の上部にはスラリー状の研磨液
１７を供給するための配管１８と、リンス液１９を供給
するための配管２０が設けられる。この研磨装置１０に
より半導体基板１６を研磨する場合には、加圧ヘッド１
２ａを下降して半導体基板１６に所定の圧力を加えて基
板１６を押える。配管１８から研磨液１７を研磨用パッ
ド１３に供給しながら、加圧ヘッド１２ａと回転定盤１
１とを同一方向に回転させて、基板１６の表面を鏡面状
に研磨する。所定の研磨が行われた後、半導体基板１６
をリンスする場合、研磨液の供給を停止すると同時に配
管２０からリンス液１９を研磨用パッド１３に供給し始
める。リンス液を供給しながら、加圧ヘッド１２ａと回
転定盤１１を回転させる。このとき加圧ヘッド１２ａの
加圧力を下げることが好ましい。研磨用パッド１３上に
供給されたリンス液は半導体基板１６の表面と研磨用パ
ッド１３の間に行渡り、これまでの研磨液を洗い流す。The polishing method for rinsing a semiconductor substrate using the rinsing liquid of the present invention includes a single-side polishing method and a double-side polishing method. FIG. 1 shows a single-side polishing apparatus 10. The polishing apparatus 10 includes a rotary platen 11 and a substrate holder 12. The rotating surface plate 11 is a large disk, and is rotated by a shaft 15 connected to the center of the bottom surface. A polishing pad 13 is attached to the upper surface of the rotary platen 11. Substrate holder 1
2 is a pressure head 12a connected to the pressure head 12a.
and a shaft 12b for rotating a. Pressure head 1
A polishing plate 14 is attached to the lower surface of 2a. A plurality of semiconductor substrates 16 are attached to the lower surface of the polishing plate 14. A pipe 18 for supplying a slurry-like polishing liquid 17 and a pipe 20 for supplying a rinsing liquid 19 are provided above the rotary platen 11. When polishing the semiconductor substrate 16 by the polishing apparatus 10, the pressing head 1
2 a is lowered to apply a predetermined pressure to the semiconductor substrate 16 and press the substrate 16. While supplying the polishing liquid 17 to the polishing pad 13 from the pipe 18, the pressing head 12 a and the rotary platen 1
1 is rotated in the same direction, and the surface of the substrate 16 is mirror-polished. After the predetermined polishing is performed, the semiconductor substrate 16
In the case of rinsing, the supply of the polishing liquid is stopped, and at the same time, the supply of the rinsing liquid 19 from the pipe 20 to the polishing pad 13 is started. The pressurizing head 12a and the rotating platen 11 are rotated while supplying the rinsing liquid. At this time, it is preferable to reduce the pressing force of the pressing head 12a. The rinsing liquid supplied on the polishing pad 13 flows between the surface of the semiconductor substrate 16 and the polishing pad 13 to wash away the polishing liquid.
【００１０】[0010]
【実施例】次に本発明の具体的態様を示すために、本発
明の実施例を比較例とともに説明する。 ＜実施例１＞図１に示した研磨装置１０において、シリ
コンウェーハ１６をＳｉＯ2の砥粒をＮａＯＨ水溶液に
溶かした研磨液１７で研磨し、研磨液の供給を停止する
と同時に配管２０から３重量％の過酸化水素（Ｈ2Ｏ2）
水からなるリンス液１９を研磨用パッド１３に滴下して
シリコンウェーハ１６をリンスした。このリンス液の酸
化還元電位は約３３０ｍＶ、ｐＨは約５．４であった。 ＜実施例２＞リンス液として１重量％の過酸化水素水と
０．１重量％のＮＨ4ＯＨとを含む水溶液を用いた以
外、実施例１と同様にしてシリコンウェーハをリンスし
た。このリンス液の酸化還元電位は約３８ｍＶ、ｐＨは
約９．８であった。EXAMPLES Next, examples of the present invention will be described together with comparative examples in order to show specific embodiments of the present invention. <Embodiment 1> In the polishing apparatus 10 shown in FIG. 1, a silicon wafer 16 is polished with a polishing liquid 17 in which abrasive grains of SiO 2 are dissolved in an aqueous NaOH solution. % Hydrogen peroxide (H 2 O 2 )
A rinsing liquid 19 composed of water was dropped on the polishing pad 13 to rinse the silicon wafer 16. The oxidation-reduction potential of the rinse was about 330 mV, and the pH was about 5.4. Example 2 A silicon wafer was rinsed in the same manner as in Example 1, except that an aqueous solution containing 1% by weight of hydrogen peroxide and 0.1% by weight of NH 4 OH was used as a rinsing liquid. The oxidation-reduction potential of the rinse was about 38 mV, and the pH was about 9.8.
【００１１】＜実施例３＞リンス液として１重量％の過
酸化水素水と０．６重量％のピロリン酸ナトリウムとを
含む水溶液を用いた以外、実施例１と同様にしてシリコ
ンウェーハをリンスした。このリンス液の酸化還元電位
は約１４０ｍＶ、ｐＨは約９．０であった。 ＜実施例４＞リンス液として１重量％の過酸化水素水と
０．１重量％のＮＨ4ＯＨと０．６重量％のピロリン酸
ナトリウムとを含む水溶液を用いた以外、実施例１と同
様にしてシリコンウェーハをリンスした。このリンス液
の酸化還元電位は約５０ｍＶ、ｐＨは約９．９であっ
た。 ＜比較例＞リンス液として超純水を用いた以外、実施例
１と同様にしてシリコンウェーハをリンスした。Example 3 A silicon wafer was rinsed in the same manner as in Example 1 except that an aqueous solution containing 1% by weight of hydrogen peroxide and 0.6% by weight of sodium pyrophosphate was used as a rinsing liquid. . The oxidation-reduction potential of the rinse was about 140 mV, and the pH was about 9.0. <Example 4> Same as Example 1 except that an aqueous solution containing 1% by weight of hydrogen peroxide, 0.1% by weight of NH 4 OH, and 0.6% by weight of sodium pyrophosphate was used as a rinsing liquid. And the silicon wafer was rinsed. The oxidation-reduction potential of the rinse was about 50 mV, and the pH was about 9.9. Comparative Example A silicon wafer was rinsed in the same manner as in Example 1 except that ultrapure water was used as a rinsing liquid.
【００１２】＜比較評価＞実施例１〜４及び比較例のリ
ンス液のリンス効果を確かめるために、リンス直後のシ
リコンウェーハを図示しないアンロードステーションに
移動した後、直ちにウェーハ表面のマイクロスクラッチ
は原子間力顕微鏡（ＡＦＭ）にて、ピット、パーティク
ルはパーティクルカウンタにてそれぞれ計測した。マイ
クロスクラッチはウェーハ表面の線状キズ、ピットは表
面欠陥、パーティクルはウェーハ表面に付着した直径が
０．１２μｍ以上の微小の異物をいう。また研磨終了時
に残留する砥粒によって生じたウェーハ表面の微小な凹
凸であるヘイズを測定した。このヘイズは、ウェーハ表
面の微小な凹凸（表面粗さ）などに起因する微小な散乱
光の入射光に対する百万分率（ｐｐｍ）で表され、レー
ザの散乱を利用した表面検査装置により測定した。これ
らの結果を表１に示す。<Comparative Evaluation> In order to confirm the rinsing effect of the rinsing liquids of Examples 1 to 4 and Comparative Example, the silicon wafer immediately after rinsing was moved to an unloading station (not shown), and the micro-scratch on the wafer surface was immediately replaced with atomic atoms. With an atomic force microscope (AFM), pits and particles were measured with a particle counter, respectively. Microscratch refers to linear scratches on the wafer surface, pits refer to surface defects, and particles refer to minute foreign matters having a diameter of 0.12 μm or more attached to the wafer surface. Further, haze, which is minute unevenness on the wafer surface caused by abrasive grains remaining at the end of polishing, was measured. This haze is expressed in parts per million (ppm) with respect to incident light of minute scattered light caused by minute irregularities (surface roughness) on the wafer surface, and was measured by a surface inspection device using laser scattering. . Table 1 shows the results.
【００１３】[0013]
【表１】 [Table 1]
【００１４】表１から明らかなように、マイクロスクラ
ッチ、ピット、パーティクル及びヘイズの全ての項目に
ついて、比較例と比べて実施例１〜４は優れていた。実
施例１〜４の中で酸化剤と分散剤を含む実施例３のリン
ス液と、酸化剤とアルカリと分散剤を含む実施例４のリ
ンス液の双方の結果が特に優れていた。As apparent from Table 1, Examples 1 to 4 were superior to Comparative Examples in all items of microscratch, pit, particle and haze. Among the Examples 1 to 4, the results of both the rinsing solution of Example 3 containing an oxidizing agent and a dispersant and the rinsing solution of Example 4 containing an oxidizing agent, an alkali and a dispersing agent were particularly excellent.
【００１５】[0015]
【発明の効果】以上述べたように、本発明のリンス液を
用いたリンス法によれば、研磨終了時に研磨液中の砥粒
を半導体基板表面に凝集、付着させず、かつ研磨用パッ
ドから速やかに除去し、これにより基板表面にマイクロ
スクラッチ、ピット、ダメージ及び汚染を生じさせない
優れた効果がある。特に酸化剤に加えてアルカリ又は分
散剤を含んだリンス液を用いて研磨終了時の半導体基板
をリンスすると、その効果はより優れたものとなる。As described above, according to the rinsing method using the rinsing liquid of the present invention, at the end of polishing, the abrasive grains in the polishing liquid are not aggregated and adhered to the surface of the semiconductor substrate, and the polishing pad is removed from the polishing pad. It is quickly removed, thereby providing an excellent effect of preventing micro scratches, pits, damage and contamination on the substrate surface. In particular, when the semiconductor substrate at the end of polishing is rinsed with a rinse liquid containing an alkali or a dispersant in addition to the oxidizing agent, the effect is more excellent.
【図１】本発明のリンス液を用いてリンスする研磨装置
の構成図。FIG. 1 is a configuration diagram of a polishing apparatus for rinsing using a rinsing liquid of the present invention.
１０ 研磨装置 １１ 回転定盤 １３ 研磨用パッド １６ シリコンウェーハ（半導体基板） １７ 研磨液 １９ リンス液 Reference Signs List 10 polishing apparatus 11 rotary platen 13 polishing pad 16 silicon wafer (semiconductor substrate) 17 polishing liquid 19 rinse liquid
───────────────────────────────────────────────────── フロントページの続き (72)発明者 加藤 健夫 東京都千代田区大手町１丁目５番１号 三 菱マテリアル株式会社内 (72)発明者 高石 和成 東京都千代田区大手町１丁目５番１号 三 菱マテリアルシリコン株式会社内 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Takeo Kato 1-5-1, Otemachi, Chiyoda-ku, Tokyo Within Mitsui Materials Corporation (72) Inventor Kazunari Takaishi 1-5, Otemachi, Chiyoda-ku, Tokyo No. 1 Mitsubishi Materials Silicon Co., Ltd.
Claims (6)
記半導体基板(16)の表面をリンスするリンス液(19)にお
いて、 酸化剤を含有し、酸化還元電位が１０ｍＶ以上であるこ
とを特徴とする半導体基板の研磨終了時のリンス液。1. A rinsing liquid (19) for rinsing the surface of the semiconductor substrate (16) at the end of polishing the surface of the semiconductor substrate (16), wherein the rinsing liquid contains an oxidizing agent and has a redox potential of 10 mV or more. A rinsing liquid at the end of polishing a semiconductor substrate.
上である請求項１記載のリンス液。2. The rinsing solution according to claim 1, further comprising an alkali and having a pH of 8.0 or more.
載のリンス液。3. The rinse according to claim 1, further comprising a dispersant.
面を研磨し、その研磨終了時に前記研磨装置(10)におい
て前記半導体基板(16)の表面をリンスする方法におい
て、 酸化剤を含有し、酸化還元電位が１０ｍＶ以上であるリ
ンス液(19)により前記半導体基板(16)をリンスすること
を特徴とする半導体基板のリンス法。4. A method for polishing a surface of a semiconductor substrate (16) by a polishing device (10) and rinsing the surface of the semiconductor substrate (16) in the polishing device (10) at the end of the polishing, comprising: A method of rinsing a semiconductor substrate, comprising rinsing the semiconductor substrate (16) with a rinsing liquid (19) having a redox potential of 10 mV or more.
そのｐＨが８．０以上である請求項４記載のリンス法。5. The rinsing liquid (19) further contains an alkali,
The rinsing method according to claim 4, wherein the pH is 8.0 or more.
求項４又は５記載のリンス法。6. The rinsing method according to claim 4, wherein the rinsing liquid (19) further contains a dispersant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04545098A JP3551226B2 (en) | 1998-02-26 | 1998-02-26 | Rinse solution after polishing of semiconductor substrate and rinsing method using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04545098A JP3551226B2 (en) | 1998-02-26 | 1998-02-26 | Rinse solution after polishing of semiconductor substrate and rinsing method using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11243072A true JPH11243072A (en) | 1999-09-07 |
| JP3551226B2 JP3551226B2 (en) | 2004-08-04 |
Family
ID=12719691
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP04545098A Expired - Fee Related JP3551226B2 (en) | 1998-02-26 | 1998-02-26 | Rinse solution after polishing of semiconductor substrate and rinsing method using the same |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007103703A (en) * | 2005-10-05 | 2007-04-19 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Polishing method of semiconductor wafer |
| JP2010278448A (en) * | 1998-12-09 | 2010-12-09 | Applied Materials Inc | Polishing platen rinse for controlled passivation of silicon/polysilicon surfaces |
| WO2012002525A1 (en) * | 2010-07-02 | 2012-01-05 | 株式会社Sumco | Method for polishing silicon wafer |
| JP2012028796A (en) * | 2002-11-08 | 2012-02-09 | Fujimi Inc | Polishing compound and method of manufacturing silicon wafer |
| JP2017204523A (en) * | 2016-05-10 | 2017-11-16 | 株式会社テクニカルフィット | Polishing member and polishing method |
| KR20230062646A (en) | 2020-12-16 | 2023-05-09 | 가부시키가이샤 사무코 | Silicon wafer polishing method and silicon wafer manufacturing method |
-
1998
- 1998-02-26 JP JP04545098A patent/JP3551226B2/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010278448A (en) * | 1998-12-09 | 2010-12-09 | Applied Materials Inc | Polishing platen rinse for controlled passivation of silicon/polysilicon surfaces |
| JP2012028796A (en) * | 2002-11-08 | 2012-02-09 | Fujimi Inc | Polishing compound and method of manufacturing silicon wafer |
| JP2007103703A (en) * | 2005-10-05 | 2007-04-19 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Polishing method of semiconductor wafer |
| WO2012002525A1 (en) * | 2010-07-02 | 2012-01-05 | 株式会社Sumco | Method for polishing silicon wafer |
| JP5622124B2 (en) * | 2010-07-02 | 2014-11-12 | 株式会社Sumco | Polishing method of silicon wafer |
| JP2017204523A (en) * | 2016-05-10 | 2017-11-16 | 株式会社テクニカルフィット | Polishing member and polishing method |
| KR20230062646A (en) | 2020-12-16 | 2023-05-09 | 가부시키가이샤 사무코 | Silicon wafer polishing method and silicon wafer manufacturing method |
| DE112021006523T5 (en) | 2020-12-16 | 2023-11-16 | Sumco Corporation | METHOD FOR POLISHING A SILICON WAFER AND METHOD FOR PRODUCING A SILICON WAFER |
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| JP3551226B2 (en) | 2004-08-04 |
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