JPH1123651A - Burn-in tester - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a burn-in tester for testing small quantity variety production semiconductor integrated circuits in parallel. SOLUTION: A control section 6 delivers instructions read out from device test programs 5A, 5B for zones A, B in a device alternately to test devices 2A, 2B through a test device switch circuit 9. The test devices 2A, 2B perform burn-in test for semiconductor integrated circuits 1A, 1B contained in a thermostatic bath 3. The content described in the device test program is different for different kind of semiconductor integrated circuit. The control section 6 delivers temperature conditions designated by a temperature control instruction issued from the zone A to a thermostatic bath temperature control section 4 at a specified timing thus shifting the temperature of the thermostatic bath 3. When a temperature control instruction is issued from any one zone, the control section 6 interrupts the test for that zone temporarily until a temperature control instruction is issued from the other zone. When the temperature control instruction is issued from both zones, temperature conditions are delivered to the thermostatic bath temperature control section 4 and the test is resumed for the temporarily interrupted zone.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a device to be measured (hereinafter simply referred to as a "device") such as a semiconductor integrated circuit, which is subjected to a test in accordance with a failure mechanism by applying a temperature stress and an electric stress to a defect. The present invention relates to a burn-in test apparatus for finding and removing defective devices. More specifically, the present invention relates to a burn-in test apparatus that performs a burn-in test on a large number of semiconductor integrated circuits in parallel using a device test program that describes test conditions and test procedures.

[0002]

2. Description of the Related Art In a burn-in test apparatus, in order to detect an initial failure of a semiconductor integrated circuit, the semiconductor integrated circuit is operated for a long time with a high-temperature heat load and an electric load of a power supply voltage exceeding a specified value applied to the semiconductor integrated circuit. By doing so, an initial failure is forcibly generated to determine a good product or a defective product. Such a burn-in test is executed in accordance with a device test program described in a language developed for the burn-in test of a semiconductor integrated circuit, and a large number of semiconductor integrated circuits are generally tested at a time. The device test program defines the temperature command to the temperature controller that controls the temperature in the semiconductor integrated circuit oven, the electrical conditions to be applied to the semiconductor integrated circuit, test conditions such as signal data and timing data, and the test flow. Test procedures are described.

[0003]

However, in the conventional burn-in test apparatus, only one type of device test program can be executed in one burn-in test. That is, only one kind of semiconductor integrated circuit can be tested at the same time. However, recent semiconductor integrated circuits have been produced in various types and in small quantities, and the following problems have arisen.

That is, when a burn-in test apparatus capable of testing a large number of semiconductor integrated circuits of the same type is used, if only one type of device test program can be executed in one burn-in test, only a small number of semiconductor integrated circuits can be simultaneously tested. Will be tested. Therefore, most of the burn-in device is occupied in an empty state for a long time. In addition, since a device test program is sequentially executed for each type of semiconductor integrated circuit in order to perform various types of tests, the number of tests and the test time increase. In this regard, it is inevitable to increase the number of burn-in test devices according to the number of types of semiconductor integrated circuits, but it is not a practical solution from the viewpoint of the cost of the device itself and the installation location. I can not say.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object of the present invention is to provide a burn-in test apparatus capable of testing a semiconductor integrated circuit of various kinds and small-quantity production in parallel.

[0006]

According to one aspect of the present invention, there is provided a storage medium for storing, for each zone, a device program in which instructions defining test conditions and test procedures are described. A test means for performing a burn-in test of a device to be tested for each zone according to an instruction described in the device program, and each time a predetermined number of instructions read from the device program are transmitted to the test means, Switching means for switching a zone and transmitting a new command to a test means corresponding to the switched zone is provided.

According to a second aspect of the present invention, in the first aspect of the present invention, a synchronous wait instruction for instructing a synchronous wait between device programs is issued as the instruction is read from the device program. Detecting means for detecting, and each time the synchronization wait instruction is detected, suspends the burn-in test of the zone corresponding to the device program in which the synchronization wait instruction is described, and sets the synchronization wait instruction in all the zones. Control means for restarting the burn-in test of all zones at the time of detection.

According to a third aspect of the present invention, in the second aspect of the present invention, the synchronization waiting instruction is a temperature control instruction for controlling a temperature in the same constant temperature chamber in which the devices are accommodated. The control means starts temperature control in the constant temperature bath based on the predetermined temperature control command described in any one of the device programs when the burn-in test is restarted. And The invention according to claim 4 is the invention according to any one of claims 1 to 3, further comprising a status output unit that outputs an execution status of the burn-in test by the test unit for each of the zones. And The invention according to claim 5 is characterized in that, in the invention according to any one of claims 1 to 4, each of the test means creates a test result of the burn-in test.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a block diagram showing a configuration of the burn-in test apparatus according to the embodiment. In the present embodiment, two zones, zone A and zone B, are assumed as zones in the burn-in test apparatus. In the following description, the number of zones will be described as “2”. The “zone” is a region which is electrically divided in the same constant temperature bath so that multiple types of semiconductor integrated circuits can be burned in with different test patterns at the same time.

Now, the semiconductor integrated circuits 1A and 1A shown in FIG.
B are test objects of the burn-in test. The semiconductor integrated circuit 1A belongs to the zone A, and the semiconductor integrated circuit 1B belongs to the zone B. Note that the semiconductor integrated circuits 1A, 1
B is composed of a number of devices each of the same type. The test devices 2A and 2B are devices for performing a burn-in test on the semiconductor integrated circuits 1A and 1B, respectively. These test devices accumulate the test results obtained by the burn-in test in a memory or the like provided therein. In this way, by storing the test results for each test device, even if one of the test devices fails or the burn-in test device fails due to a defect in the semiconductor integrated circuit to be tested, The burn-in test in the zone where the abnormality has occurred can be stopped, and the burn-in test in the normal zone can be continued to proceed to the next step.

The thermostat 3 contains the semiconductor integrated circuits 1A and 1B, and the thermostat temperature controller 4 controls the temperature inside the thermostat 3 in accordance with a temperature control command from a controller 6 described later. The test contents of the semiconductor integrated circuits 1A and 1B are described in the device test programs 5A and 5B, respectively. The device test program is prepared for each type of semiconductor integrated circuit, and if the device test program differs, the instructions described therein also differ. However, it is premised that the temperature change in the thermostat 3 by the temperature control command is basically the same in all device test programs. However, as will be described later, if the burn-in test on the zone B is completed first, the result of the burn-in test on the zone B will not affect the result of the temperature change on the side of the zone A whatever. An exception is the case. The device test programs 5A and 5B are all stored in a medium such as a hard disk, but are not shown in FIG.

The control unit 6 includes a description of a file stored in the host computer 7 and a command issued by an operator operating the input device 8 (hereinafter referred to as an “command by an operator”).
According to the device test program 5A,
Capture 5B. Further, the control unit 6 analyzes the test flow described in the fetched device test program in units of instructions, and controls the test apparatus switching circuit 9 provided therein to transmit the analyzed instructions to the test apparatus 2A. , 2B
Output alternately to

Here, as for the above-mentioned temperature control command, only the one described in the device test program 5A is treated as valid, and the temperature condition specified by the command is applied to the control unit 6.
Is output to the thermostatic bath temperature control unit 4. Therefore, even if a temperature control command is described in the device test program 5B, the temperature condition specified by the command is not sent to the thermostatic bath temperature controller 4.

In the control unit 6, an instruction which requires a synchronization wait process between device test programs is registered in advance as a "synchronization wait instruction", and is used as a synchronization wait trigger. The above-described temperature control command is a kind of a synchronization wait command. By synchronizing the device test programs 5A and 5B with the temperature control command, a burn-in test is performed at a temperature change expected by each device test program. Will be.

Further, the control unit 6 holds the execution state of the device test program for each of the zones A and B. Specific execution states include an “executable state” in which the device test program is executed, and a “synchronization wait state” in which synchronization with another device test program is waited for by executing a preceding synchronization wait instruction. In addition, there is an “end waiting state” in which the execution of the device test program has been completed. However, when in the end waiting state, it is also treated as being in the synchronization waiting state at the same time. The other functions of the control unit 6 will be clarified in the description of the operation.

The display device 10 and the output device 11 include the control unit 6
The execution status and the like of the burn-in test output from are displayed or output as needed for each zone. The execution status includes the elapsed time from the start of execution of the device test program, the line number of the device test program being executed, the test number of each test item, its running time, the value of the power supply voltage, and the like. In addition to the above, the display device 10 and the output device 11
Can display and output the test results stored in the test devices 2A and 2B. The display device 10,
Which of the output devices 11 is selected or both are selected is determined by an instruction from an operator or the like.

Next, the operation of the burn-in test apparatus having the above configuration will be described with reference to FIGS. Here, FIG.
3 is a flowchart showing the entire operation of the burn-in test apparatus, and FIGS. 3 and 4 are flowcharts showing details of the instruction analysis processing shown in FIG. FIG. 5 is a diagram showing both the temperature change according to the description of the device test program 5A and the execution states of the device test programs 5A and 5B.

First, when the power supply of the burn-in test apparatus is turned on, a control program for controlling the burn-in test is started. As a result, the control unit 6 initializes the states of both zones to an executable state as initialization processing, and waits for a command from an operator or the like. Thereafter, in step S1 of FIG. 2, when the reading of the device test program is instructed by an instruction of the operator or the like, the control unit 6 sequentially loads the device test programs 5A and 5B into the internal memory.

Next, in step S2, when the start of the burn-in test is instructed by an instruction from an operator or the like, the control unit 6 initializes the test apparatus to which the test command is output to zone A in step S3. The time at this point is time t0 in FIG. Next, the control section 6 advances the processing to step S4 to perform an instruction analysis processing of the device test program. As will be described in detail below, in this instruction analysis processing, the device test programs 5A and 5B are analyzed in instruction units, and the test apparatuses 2A and 2B are controlled to perform the burn-in test simultaneously and in parallel.

When the processing of the control section 6 proceeds to step S4, the processing shown in FIGS. 3 and 4 is called. First, the control unit 6 determines whether or not the setting of the test apparatus is the zone A side in step S21. At this point, since the zone A is initially set in step S3, the control unit 6 advances the process to step S22 and switches the test device switching circuit 9 to the test device 2A. Next, the control unit 6 reads one command described in the device test program 5A in step S23, and determines in step S24 whether the read command is a program end command.

At this point, the device test program 5
Since A has not been completed, the control unit 6 proceeds to step S26.
Then, it is determined whether the read command is a test condition setting command, and if so, in step S27, the test condition is output to the test device 2A set as the test device. Next, in step S28 of FIG. 4, the control unit 6 determines whether the read instruction is a synchronization wait instruction. In this case, since the instruction is a test condition setting instruction, the process proceeds to step S28.
Proceed to 29. In step S29, the control unit 6 determines whether the setting of the test apparatus is the zone A side. Since the determination result in this case is "Yes", the process proceeds to step S42, and the setting of the test apparatus is performed. Switch to zone B side.

Next, in step S31, the controller 6 determines whether both the zone A and the zone B are in a synchronization waiting state. In this case, since both zones are in an executable state, the instruction analysis processing is terminated. Let it. Next, the control unit 6 advances the processing to step S5 (FIG. 2), and determines whether or not the zone A is in the end waiting state. In this case, since no zone is in the end waiting state, the control unit 6 further advances the process to step S6, and recognizes that the zone B is not in the end waiting state. Next, the control unit 6 advances the process to step S7, and determines whether or not the device test programs of both zones have been completed. In this case, since neither process has been completed, the process returns to step S4.

Then, in the same manner as described above, FIG.
4 is called, in this case, the setting of the test apparatus is switched to the zone B side in step S42,
The result of the determination in step S21 is "No". Therefore,
As in steps S22 to S24 described above, the control unit 6 switches the test device switching circuit 9 to the test device 2B side by sequentially processing steps S34 to S36, reads one instruction from the device test program 5B, and Is a program termination instruction. Since the determination result in this case is also “No”, the control unit 6 performs the process in step S
Proceed to 26.

If the read command is a test condition setting command, the process proceeds to step S2 in the same manner as described above.
7 (FIG. 3), and proceeds to steps S28 and S29 (FIG. 4) to output the test conditions specified by the command to the test apparatus 2B and determine whether the setting of the test apparatus is the zone A side. In this case, since the setting of the test apparatus is the zone B side, the control unit 6 switches the setting of the test apparatus to the zone A side in step S30, and then proceeds to step S5 in FIG. 2 via step S31. Even in this case, since both zones are not in the end waiting state, the control unit 6 advances the processing to steps S5, S6, S7 and returns to step S4.

Thereafter, the device test program 5
If the command read from A or 5B is not a temperature control command, a synchronization wait command, or a program end command,
Instructions are alternately read one by one from the device test programs 5A and 5B, and burn-in tests at room temperature are performed in parallel in the test devices 2A and 2B as shown at times t0 to t1 in FIG. However, if the command is not a test condition setting command, the determination result of step S26 in FIG.
o ", the control unit 6 advances the processing to step S37, confirms that the instruction is not a temperature control instruction, and then advances the processing to step S45 to perform individual processing (each processing) corresponding to the read instruction. Instructions for executing test items, collecting test results, determining whether test results are normal or abnormal, etc.)
The process proceeds to step S28 in FIG. This step S
The processing after 28 is the same as described above.

Thereafter, when the temperature control command at 80 ° C. is read from the device test program 5A at time t1 in FIG. 5, the determination result in step S37 in FIG. 3 is “Yes”.
Becomes Therefore, the control unit 6 determines whether or not the setting of the test apparatus is the zone A side in step S38. Since the determination result is “Yes”, the controller 6 stores the temperature condition in an internal memory in step S39 in order to output the temperature condition to the thermostatic bath temperature controller 4 in step S33 described later. That is, at this time, the control unit 6 does not output the temperature condition to the thermostatic bath temperature control unit 4.

Next, at step S40 in FIG.
When it is determined whether or not the setting of the test apparatus is the zone A side, the determination result is “Yes”. After setting the execution state of the zone A side to the synchronization waiting state in step S41,
In step S42, the setting of the test apparatus is switched to the zone B side, and the instruction analysis processing is ended via step S31. Thereafter, the burn-in test is performed only in the test apparatus 2B on the zone B side until time t2 in FIG. Therefore, the control unit 6 detects that the zone A is in the synchronization waiting state in the process of step S30, and prevents the setting of the test apparatus from being switched to the zone A. It is assumed that the device control program 5B does not include a temperature control command, a synchronization wait command, and a program end command until time t2.

Then, when the temperature control command at 80 ° C. is read from the device test program 5B at time t2, the result of the determination in step S37 becomes “Yes”. Therefore, the control unit 6 executes step S38 in the same manner as described above, but in this case, the determination result is “No”, so the process proceeds to step S28 in FIG. Here, as described above, since the temperature control command is a kind of the synchronization waiting command, the control unit 6 sequentially performs the processing in steps S40 and S46.
(FIG. 4), the execution state of the zone B is set to the synchronization waiting state in step S46, and the setting of the test apparatus is switched to the zone A side in step S47.

Next, in step S31, the control unit 6 determines whether both the zone A and the zone B are in a synchronization waiting state, and if the result of the determination is "Yes", the control unit 6 determines in step S32 that both zones are in a standby state. Change the execution state of the to the executable state and release the synchronization wait. Next, in step S33, the control unit 6 sets the setting of the test apparatus to the zone A side, and outputs the temperature condition stored in the internal memory to the constant temperature bath temperature control unit 4 in step S39. To end. As a result, the temperature inside the thermostat 3 rises from room temperature to 80 ° C. At this time, the execution state of both zones is an executable state, and the setting of the test apparatus has been switched to the zone A side. Therefore, the subsequent operations are the same as those at the times t0 to t1.

As shown in FIG. 5, since the temperature in the thermostat 3 gradually increases toward the set value of 80 ° C., the device test programs 5A and 5B indicate that the temperature has reached the set value. It is described that the burn-in test is restarted when the above is confirmed.

As described above, when the temperature control command is first detected on the zone A side, the zone A side waits for synchronization until the temperature control command is detected on the zone B side. After the execution, the temperature control is started at the temperature set value specified by the temperature control command on the zone A side. The semiconductor integrated circuit in the zone in the synchronization waiting state is still subjected to the temperature stress, but in this case, no electrical stress is applied, so that even if the synchronization waiting state continues, the test result is affected. No such problem occurs.

Thereafter, when a temperature control command of 25 ° C. is read from the device test program 5B at time t3 in FIG. 5, the determination result in step S37 in FIG. 3 is “Yes”.
After that, the control unit 6 proceeds to step S38 (FIG. 3), steps S28, S40, S46, S47, and S3.
In step 1 (FIG. 4), the execution state of the zone B is set to the synchronization waiting state, and the setting of the test apparatus is switched to the zone A. Therefore, thereafter, the burn-in test is performed only on the zone A side according to the device test program 5A, and the zone B side is in a synchronization waiting state until time t4. Note that, as in the period between times t1 and t2, step S4
In the process 2, the control unit 6 detects that the zone B side is in the synchronization waiting state, and prevents the setting of the test apparatus from being switched to the zone B side.

When the temperature control command of 25 ° C. is read from the device test program 5A at time t4, the result of the determination in step S37 in FIG. 3 becomes “Yes”. Therefore, the control unit 6 performs the processing in steps S38, S3
9 (FIG. 3), S40, S41, S42, S31 (FIG. 4)
Then, the temperature condition designated by the command is stored in the internal memory, and the execution state of the zone A is set to the synchronization waiting state. Next, the control unit 6 further performs the processing in step S
After proceeding to steps S32 and S33 to release the synchronization waiting state of both zones, the zone switched in step S42 is reset to the zone A side, and the temperature condition is sent to the thermostatic bath temperature controller 4. Thus, the burn-in test at 25 ° C. is restarted in both zones.

As described above, even when the temperature control command is first detected on the zone B side, the zone B side waits for synchronization until the temperature control command is detected on the zone A side. Is executed, a temperature transition occurs. However, in this case, the temperature control command on the zone B side at the time t3 is ignored, and the temperature value of the temperature control command on the zone A read at the time t4 is regarded as valid, and the temperature inside the thermostat 3 is controlled. Is done.

Thereafter, at time t5 in FIG. 5, when a program end instruction is read from the device test program 5B and an instruction to end the burn-in test on the zone B side is issued, the determination result in step S36 in FIG. ". Therefore, the control unit 6 changes the execution state of the zone B to the end waiting state in step S43, and ends the instruction analysis processing. Thereby, after the determination result of step S5 in FIG. 2 is “No”, the determination result of step S6 is “Y”.
es ", the control unit 6 switches the setting of the test apparatus to the zone A in the executable state in step S10,
In step S11, the execution state of the zone A is changed to an executable state. Thus, if the execution state of the zone A is the synchronization waiting state, the state is released.

Next, the processing of the control section 6 returns to step S4 via step S7, reads the device test program 5A continuously, and performs a burn-in test only on the zone A side. Thereafter, at time t6 in FIG. 5, when a temperature control command of 30 ° C. is read from the device test program 5A, the determination result of step 37 in FIG.
s ", the control unit 6 sequentially performs steps S38 to S42, and then determines in step S31 whether both zones are in a synchronization waiting state. In this case, since the zone A is in the synchronization waiting state and the zone B is in the end waiting state, the control unit 6
Considers that zone B is also in the synchronization waiting state as described above, and sequentially processes steps S32 and S33. As a result, the temperature condition stored in step S39 is output to the constant temperature bath temperature control unit 4 to set the temperature of the constant temperature bath 3 to 30 ° C., and the control unit 6 continues the burn-in test on the zone A side. Do.

Then, when a program end instruction is read from the device test program 5A at time t7 in FIG. 5, the determination result of step S24 becomes "Yes". Therefore, the control unit 6 also sets the execution state of the zone A to the end waiting state in step S25, and ends the instruction analysis processing. As a result, the execution state of both zones is set to the end wait state, and the control unit 6 performs steps S5, S8, S8 in FIG.
After sequentially executing steps S9, S6, S10, and S11, it is recognized in step S7 that both zones are in an end waiting state. Therefore, at this point, the burn-in test in both zones is completed.

As described above, in the zone where the burn-in test has been completed earlier, the zone is placed in a waiting state until the burn-in test of the other zone is completed. In the zone where the burn-in test has not been completed, the device test is completed. Even if a temperature control command or a synchronization wait command is read from the program, no synchronization wait is performed until the burn-in test ends.

Incidentally, if the burn-in test on the zone A side is completed first, step S39 in FIG. 3 is not executed, so that even if the temperature control command is read from the device test program 5B, the temperature change caused by this is not affected. Will not occur. That is, in this case, since the temperature change expected by the device test program 5B is not performed, such a device test program is not created.

In the above embodiment, the number of zones has been described as 2. However, the present invention can be applied without any problem even when the number of zones is 3 or more. In such a case, as the number of zones increases, the processing related to zone B described above increases. In the above embodiment, the temperature control command is taken as the synchronization wait command. However, when a synchronization wait command other than the temperature control command is used, the operation is performed in accordance with the above description. In the above embodiment, the device test program to be read is switched in units of one instruction, but may be switched in units of two or more instructions. In the above embodiment, a device test program is prepared for each type of semiconductor integrated circuit. However, a semiconductor integrated circuit of the same type is divided into a plurality of zones, and a burn-in test is performed using different device test programs. It may be performed.

[0041]

As described above, according to the present invention,
A device program is prepared for each zone, and a command is read from the device program and sent to the test means to perform a burn-in test of the device.
Each time a predetermined number of instructions are sent to the test means, the zone is switched, and a burn-in test is performed by a different test means. As a result, a plurality of types of device test programs can be run in parallel, so that burn-in tests of various types of devices can be performed simultaneously. Therefore, in testing a device manufactured in a large variety of small quantities, the test time can be reduced as compared with the conventional device, and energy saving and test cost can be reduced. Further, the operation efficiency can be improved because the number of devices to be tested at one time increases. Furthermore, since the number of required burn-in test devices can be reduced, equipment costs can be reduced and space can be saved.

According to the second aspect of the present invention, a synchronization wait instruction is detected in response to the instruction read from the device program, and the burn-in test of the corresponding zone is temporarily stopped. The burn-in test is restarted when it is detected. As a result, the burn-in test can be performed while synchronizing the zones as needed. According to the third aspect of the present invention, a temperature control command for controlling the temperature of the same thermostatic chamber accommodating each device is defined as a synchronization wait command, and the temperature control command is detected in all the zones and the burn-in test is performed. At the point when it can be restarted, the temperature control in the thermostat is started. Thus, by installing only one temperature control device for the thermostatic chamber, it is possible to simultaneously run these device test programs while changing the temperature expected by each device program.

According to the fourth aspect of the present invention, the execution status of the burn-in test is output for each zone, so that the operator can appropriately check the progress status of the burn-in test for each zone, and when an abnormality occurs in the apparatus. Early response is possible. According to the fifth aspect of the present invention, since the test result of the burn-in test is created in each test means, an abnormality occurs in the apparatus due to a failure of any test means or a defective device to be tested. Also in this case, the burn-in test of the normal zone can be advanced to the next step.

[Brief description of the drawings]

FIG. 1 is a block diagram showing a configuration of a burn-in test apparatus according to an embodiment of the present invention.

FIG. 2 is a flowchart showing an overall operation of the apparatus.

FIG. 3 is a flowchart showing details of an instruction analysis process of the apparatus.

FIG. 4 is a flowchart illustrating details of an instruction analysis process of the apparatus.

FIG. 5 is a diagram showing a state of a temperature change according to a description of a device test program 5A and an execution state of the device test program in each of zones A and B in the embodiment.

[Explanation of symbols]

1A, 1B: semiconductor integrated circuit, 2A, 2B: test device,
3 ... constant temperature bath, 4 ... constant temperature bath temperature control unit, 5A, 5B ... device test program, 6 ... control unit, 7 ... host computer, 8 ... input device, 9 ... test device switching circuit, 10 ...
Display device, 11 output device

Claims (5)

[Claims] 1. A storage means for storing, for each zone, a device program in which an instruction defining a test condition or a test procedure is described, and a burn-in test of a device to be tested is performed in accordance with the instruction in the device program. A test unit to be implemented for each zone, and the zone is switched each time a predetermined number of commands read from the device program are sent to the test unit, and a new test unit corresponding to the switched zone is provided. A burn-in test apparatus comprising: a switching unit for transmitting a command. 2. A detecting means for detecting a synchronization wait instruction for instructing a synchronization wait between device programs as the instruction is read from the device program, and each time the synchronization wait instruction is detected. Control to suspend the burn-in test of the zone corresponding to the device program in which the synchronization wait instruction is described, and to resume the burn-in test of all the zones when the synchronization wait instruction is detected in all the zones. The burn-in test apparatus according to claim 1, further comprising: 3. The synchronization wait command is a temperature control command for controlling the temperature in the same thermostatic chamber in which the devices are accommodated, and the control means determines in advance when the burn-in test is restarted. 3. The burn-in apparatus according to claim 2, wherein the control of the temperature in the constant temperature bath is started based on the temperature control command described in any one of the device programs. 4. The burn-in test apparatus according to claim 1, further comprising status output means for outputting the execution status of said burn-in test by said test means for each of said zones. 5. The test means according to claim 1, wherein each of said test means prepares a test result of said burn-in test.
The burn-in test apparatus according to any one of the above items.