JPH11227190A - Ink jet recording head and fabrication thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for fabricating an ink jet recording head in which defective bonding of a nozzle plate and clogging of nozzle can be prevented. SOLUTION: The method for fabricating an ink jet recording head comprises a step for forming diaphragms 301 on the opposite sides of a substrate for forming a pressure room 21, a step (A) for etching one diaphragm 301 according to the profile of the pressure room 21 to expose the substrate, a step (B) for etching the exposed substrate until the other diaphragm 301 is exposed, and a step (C) for etching the diaphragm 301 selectively to remove an eave part 12 of the diaphragm formed at the open end of the pressure room 21 by one diaphragm 301 and the substrate.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an ink jet recording head, and more particularly to a method of manufacturing a pressure chamber substrate, the method comprising: removing an eaves remaining on a silicon oxide film when etching a pressure chamber substrate; To prevent clogging of nozzles and nozzles.

[0002]

2. Description of the Related Art Ink jet recording heads include a nozzle plate provided with nozzles, a pressure chamber substrate formed with a pressure chamber, a vibration plate provided on the pressure chamber substrate, and a piezoelectric element formed on the vibration plate. Is provided. The piezoelectric element has a ferroelectric ceramic thin film such as lead zirconate titanate (PZT) sandwiched between electrode films. When a voltage is applied to the piezoelectric element, a volume change occurs in the piezoelectric element. When the volume changes, the diaphragm is deformed, and pressure is applied to the ink in the pressure chamber, so that the ink is ejected from the nozzles.

Conventionally, in a method of manufacturing an ink jet recording head, as shown in FIG. 7, an oxide film such as a silicon oxide film is formed on both surfaces of a pressure chamber substrate 20 made of silicon or the like. Hereinafter, the oxide film on the side where the piezoelectric element is formed is referred to as the vibration plate 30, and the oxide film on the side where the nozzle plate is bonded is referred to as the etching mask 31.

Then, an etching mask 31 formed on the surface to which the nozzle plate is to be bonded is placed in a cavity (pressure chamber) 2.
The pressure chamber substrate 20 was etched after the window was provided by removing it according to the shape of FIG.

[0005]

However, in the pressure chamber forming step, when etching the pressure chamber substrate,
As shown in FIG. 7, the eaves portion 12 may be formed at the end of the etching mask 31 facing the cavity 21. This eaves portion 12 cracked or chipped, leaving fragments of the etching mask in the cavity.
For this reason, there have been inconveniences such as defective adhesion of the nozzle plate due to the debris, and defective discharge of the ink due to the debris clogging the nozzle.

In particular, in the wet anisotropic etching of silicon using KOH, the difference in etching rate is large depending on the plane orientation, and the surface that is easily etched (the end surface of the wall forming the cavity) is exposed at the stage of forming the reservoir. In addition, the eaves are formed large, and the above-mentioned inconvenience has been a serious problem in manufacturing.

[0007] In view of the above problems, a first object of the present invention is to provide:
By removing the eaves of the etching mask generated in the process of forming the pressure chamber, it is possible to prevent poor adhesion of the nozzle plate and clogging of the nozzle, thereby improving the product yield and reducing the cost of the ink jet recording head. To provide a manufacturing technology that can be used.

A second object of the present invention is to improve the uniformity of the product by removing the eaves of the etching mask, selecting the presence or absence of etching of the diaphragm, and adjusting the compliance of the head. Another object of the present invention is to provide a manufacturing technique capable of improving the product yield and reducing the cost of the ink jet recording head.

[0009]

An ink jet recording head for solving the first problem is provided with a pressure chamber substrate provided with a pressure chamber, a diaphragm provided on the pressure chamber substrate, and a diaphragm provided on the diaphragm. And a piezoelectric element, wherein the vibration plate has a concave portion formed in a region exposed in the pressure chamber.

That is, in the pressure chamber forming step, when the diaphragm is etched to remove the eaves formed on the diaphragm, the other diaphragm exposed in the pressure chamber is also slightly etched. Therefore, a concave portion is formed in the other diaphragm toward the pressure chamber. It is presumed that the ink jet recording head provided with the diaphragm having the concave portion uses the manufacturing method of the present invention.

Further, in the present invention, the boundary between the diaphragm and the pressure chamber substrate facing the pressure chamber has an eaves shape due to the erosion of the diaphragm more than the pressure chamber substrate.

According to the manufacturing process of the present invention, when a concave portion is formed on the pressure chamber side of the other diaphragm, etching proceeds in the direction of the extending material of the film due to the action of the etchant. Since this etching liquid selectively forms the vibration plate, an eave portion is formed at the boundary between the pressure chamber substrate and the vibration plate.

A method of manufacturing an ink jet type recording head which solves the above first problem comprises a pressure chamber substrate provided with a pressure chamber, a diaphragm provided on the pressure chamber substrate, and a piezoelectric plate provided on the diaphragm. And a body element. (A) a vibration plate forming step of forming a vibration plate on one surface of the pressure chamber substrate for forming the pressure chamber; and (b) an etching mask forming an etching mask on the other surface of the pressure chamber substrate. And (c) a mask etching step of etching the etching mask according to the shape of the pressure chamber to expose the pressure chamber substrate, and (d) a pressure of etching the exposed pressure chamber substrate until the other diaphragm is exposed. A chamber substrate etching step, and (e) an eave removing step of removing an eaves portion of the etching mask formed at an opening end of the pressure chamber by the etching mask and the pressure chamber substrate by selectively etching the etching mask. And is provided.

The invention for solving the second problem is as follows: (a) Before the eaves removing step, a resist layer for preventing the other diaphragm from being etched is formed on the other of the resist layers exposed in the pressure chamber. A resist forming step of forming the resist on the pressure chamber side of the diaphragm; and (b) a removing step of removing a resist layer formed on the pressure chamber side of the diaphragm after the eaves removing step.

For example, in the eaves removing step, the eaves of the etching mask are removed with an etching solution for etching the etching mask at a higher etching rate than the pressure chamber substrate.

This etching solution is a mixture of a buffer such as ammonium fluoride and hydrofluoric acid at a predetermined ratio.

The etching mask is, for example, silicon oxide, and the pressure chamber substrate is, for example, formed of silicon.

Further, the present invention further comprises a step of forming a piezoelectric element sandwiched between the electrode films on the diaphragm.

[0019]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the best embodiments of the present invention will be described with reference to the drawings.

<Embodiment 1> Embodiment 1 of the present invention solves the above first problem.

(Structure of Inkjet Recording Head) FIG. 1 is a perspective view of an inkjet printer in which an inkjet recording head manufactured by the manufacturing method of this embodiment is built. As shown in FIG. 1, an ink jet printer 100 according to the present embodiment includes an ink jet recording head 1, a tray 3, and the like in a main body 2 of the present invention. The paper 5 is placed on the tray 3. When printing data is supplied from a computer (not shown), an internal roller (not shown) takes the paper 5 into the main body 2. When the paper 5 passes near the rollers, the ink jet recording head 1 is driven in the direction of the arrow in FIG.
The printed paper 5 is discharged from the discharge port 4.

FIG. 2 is a perspective view of a main part of the ink jet recording head. A partial cross-sectional view is shown for easy understanding. FIG. 3 shows a layer structure of a main part of the ink jet recording head as viewed from a section AA in FIG.

As shown in FIG. 2, the main part of the ink jet recording head has a vibration plate 30 formed on one surface of an integrally formed pressure chamber substrate 20, and a piezoelectric element 40 formed on the vibration plate. It is configured. A nozzle plate 10 having a nozzle 11 is bonded to the other surface of the pressure chamber substrate 20.

The pressure chamber substrate 20 has a plurality of cavities 21 each of which functions as a pressure chamber formed by etching a silicon single crystal substrate or the like. Each cavity is formed so as to be filled with ink. You. The side wall 22 is a portion left without being etched, and is formed so as to partition between the cavities 21. The reservoir 23
The cavities 21 are formed so as to form a common flow path capable of supplying ink. The supply port 24 is formed so that ink can be introduced into each cavity 21.

The vibration plate 30 causes the cavity 21 to change in volume by bending due to the change in volume generated in the piezoelectric element 40. A piezoelectric element 40 is formed at a position corresponding to the cavity 21 on the vibration plate 30. In addition, an ink tank port 31 is provided in a part of the vibration plate 30 corresponding to the reservoir 23. As shown in FIG. 3, the diaphragm 30 is an insulating (SiO ₂ ) film 301 formed by thermally oxidizing a silicon substrate.
And the lower electrode film 302 are laminated. However, the lower electrode film 302 does not need to be provided on the entire surface of the vibration plate, and may be provided only on the portion of the piezoelectric element 40 or other necessary portions.

The piezoelectric element 40 is configured by laminating a piezoelectric layer 401 and an upper electrode film 402 on a lower electrode film 302. The piezoelectric layer 401 is, for example, a ferroelectric ceramic such as PZT, and has a perovskite crystal structure that produces an electromechanical conversion action. Note that the piezoelectric layer 401 is not limited to a single layer, and may be a stack of a plurality of piezoelectric thin film layers or a stack of different types of piezoelectric thin film layers.

A cavity mask 311 is provided on the nozzle-side surface of the pressure chamber substrate 20. The cavity mask 311 is a film that functions as a mask when etching the cavity, and is a silicon thermal oxide film (S
iO ₂ ).

The nozzle plate 10 is provided with the nozzle 11 at a position corresponding to the cavity 21.
It is configured to be adhered to.

Further, an output terminal of a drive circuit (not shown) is connected to the upper electrode film 402 of each piezoelectric element 40, and an earth terminal of the drive circuit is connected to the lower electrode film 302.

In particular, in the cavity 21 of the present embodiment,
As shown in FIG. 3, the insulating film 301 constituting the diaphragm 30
Is formed with a concave portion 32. An eave portion 26 is formed at the boundary between the vibration plate 30 and the pressure chamber substrate 20 on the cavity 21 side. These shapes are formed by the eaves removal step of the present invention.

(Operation) Next, the principle of ink droplet ejection in the ink jet recording head 1 of the present invention will be described.
Lower electrode film 302 and upper electrode film 402 of piezoelectric element 40
When no voltage is applied between the piezoelectric layer 401
Does not change volume. Therefore, the pressure in the cavity 21 corresponding to the piezoelectric element 40 to which no voltage is applied does not change, and no ink droplet is ejected from the nozzle 11.

On the other hand, the lower electrode film 302 of the piezoelectric element 40
When a voltage causing a volume change in the piezoelectric element is applied between the piezoelectric layer 401 and the upper electrode film 402,
Causes a volume change. Therefore, the diaphragm 30 to which the piezoelectric element 40 to which the voltage is applied is attached is largely bent, and changes the volume in the cavity 21. Therefore, the pressure in the cavity 21 increases instantaneously, and the ink droplet is ejected from the nozzle 11.

(Description of Manufacturing Method) Next, a method of manufacturing the ink jet recording head according to the present invention will be described with reference to FIGS.

Insulating film forming step (FIG. 4A):
An insulating film (SiO ₂ ) 301 is formed on one surface of a master 201 having a composition such as silicon, and a cavity mask 311 is formed on the other surface. Since the master 201 is formed from a silicon wafer of several inches, it has a thickness of, for example, about 200 μm. The insulating film 301 is formed to have a thickness of, for example, about 1 μm so as to obtain strength enough to function as a diaphragm. The cavity mask 311 is formed at a time in the same process. For the production of the insulating film, a known thermal oxidation method or the like is used.

In this embodiment, since the diaphragm 30 on which the piezoelectric element 40 is provided becomes thinner by etching in the eaves removing step, it is necessary to form the insulating film 301 to a thickness in consideration of the thinning. There is.

Next, the lower electrode film 302 is formed on the insulating film 301. The lower electrode film 302 is made of a conductive material, for example, platinum.
It is formed by laminating about 5 μm. In addition, it is preferable to stack a plurality of layers. For example, by laminating a titanium layer, a platinum layer, and a titanium layer with a thickness of 0.005 μm, 0.5 μm, and 0.02 μm, the adhesion to the upper and lower layers can be increased. For forming these layers, a known direct current sputtering method or the like is used.

The piezoelectric layer 401 uses ferroelectric ceramics having piezoelectric characteristics. Examples of ferroelectric ceramics include lead titanate (PbTiO ₃ ) and lead zirconate titanate (Pb (Zr, Ti) O ₃ : PZ
T), lead zirconate (PbZrO ₃ ), lead lanthanum titanate ((Pb, La) TiO ₃ ), lead lanthanum zirconate ((Pb, La) (Zr, Ti) O ₃ ): P
LZT) or lead magnesium zirconate niobate titanate (Pb (Mg _1/3 Nb _2/3 ) _0.1 (Z
r, Ti) _0.9 O ₃ ) or the like can be used.

For forming the piezoelectric layer 401, a sol-gel (s
ol-gel) method. First, a solution is prepared with a predetermined strong electric field ceramic. The solution is applied to a certain thickness to form a plurality of ceramic layers. For example, when a known spin coating method is used, 500 rotations per minute is 30
It is applied for 30 seconds at 1500 revolutions per minute for 30 seconds and finally for 10 seconds at 500 revolutions per minute. After application, a constant temperature (for example, 180
) For a certain period of time (for example, about 10 minutes). After drying, in order to further evaporate the organic solvent, at a predetermined high temperature (for example, 400 ° C.) for a certain period of time (3
(0 min) degrease. This coating, drying and degreasing are repeated eight times to laminate eight ceramic layers.

After the four ceramic layers and the eight ceramic layers are stacked, the crystallization of the ceramic layers is further promoted,
In order to improve the characteristics as a piezoelectric body, heat treatment is performed in a predetermined atmosphere. For example, after laminating four layers, in an oxygen atmosphere, rapid thermal processing (RTA) is performed at 600 degrees for 5 minutes.
Heat for 1 minute at 725 degrees. After stacking the eight layers, the substrate is heated at 650 ° C. for 5 minutes and at 900 ° C. for 1 minute in an oxygen atmosphere.

If the total thickness of the piezoelectric layer is too large, the number of manufacturing steps increases, making it impossible to manufacture at a reasonable cost, or requiring a high driving voltage. If it is too thin, the thickness cannot be made uniform, and the characteristics of each piezoelectric element separated after etching may vary. Therefore,
The thickness of the piezoelectric layer is preferably about 450 nm to 2000 nm.

The upper electrode film 402 is an electrode for applying a voltage to the piezoelectric layer 401. The upper electrode film 402
0.1 μm of a conductive material, for example, platinum (Pt)
It is formed with a thickness of about.

Step of Forming Piezoelectric Element (FIG. 10C): In the step of forming the piezoelectric body, the piezoelectric layer 401 and the upper electrode film 4 are formed.
This is a step of masking 02 so as to have a shape conforming to the shape of each cavity 21 and etching the periphery thereof to form a shape of a piezoelectric element. In other words, spinner method, using a method such as spray method to apply a uniform thickness of resist,
Exposure and development are performed to form a resist on the upper electrode film 404. Unnecessary layer structure portions are removed by applying ion milling, dry etching, or the like that is usually used.

Mask etching step (FIG. 5A):
In the mask etching step, the etching mask 311 is removed according to the shape of the cavity 21 to form the exposed portion 25 of the master. That is, a resist having a uniform thickness is applied using a method such as a spinner method or a spray method, and the resist is exposed and developed to remove only the cavity forming portion of the resist. Next, the etching mask 311 is removed using a method such as dry etching. In addition to dry etching, an ion trimming method or wet etching using an etching solution having a high etching rate for silicon oxide can be used.

Pressure Chamber Substrate Etching Step (FIG. 7B): In the pressure chamber substrate etching step, the master 20
The cavity 21 is formed by etching the exposed portion 25 of FIG. As the etching method, the cavity space is etched using anisotropic etching using active gas such as wet anisotropic etching and parallel plate reactive ion etching. This etching has a high selectivity and selectively etches only the silicon master. Even in the case of anisotropic etching, erosion proceeds at a constant etching rate in the surface direction of the master. Therefore, an eave portion 12 of the etching mask 311 is formed at the end of the opening of the cavity. In particular, in the anisotropic etching of silicon using KOH, a difference in etching speed depending on the plane orientation is large, and in some cases, a large eave is formed.

Eaves removing step (FIG. 4C): In the eaves removing step, the eaves portion of the etching mask 311 formed at the opening end of the cavity 21 is removed by wet etching. The etching solution used for this etching has a high selectivity for etching the etching mask 311 at a higher etching rate than the silicon master 201. For example, as the etching solution, a solution in which a buffer such as ammonium fluoride is mixed with hydrofluoric acid is preferable. When ammonium fluoride is used as a buffer, an etching solution in which hydrofluoric acid: ammonium fluoride is mixed at a ratio of 1: 6 is used. When wet etching is performed with this etchant, silicon oxide is selectively etched. The inner surface of the insulating film 301 on the cavity side is also etched at the same time, but the eaves portion 12 is also etched from the inside of the opening.
Etching is performed at twice the speed of the insulating film 301. Therefore, the eaves portion 12 of the cavity 21 is removed cleanly.

As described above, the insulating film 301 exposed on the inner surface of the cavity is also etched because it is made of silicon oxide. From this, the cavity 21
In the insulating film 301 on the bottom surface of FIG. Further, in the wet etching, since the etching is performed with a certain isotropic property, the erosion by the etching proceeds in the surface direction of the concave portion 32, and the silicon master left unetched relatively projects. Therefore, the insulating film 301 and the master 2
An eave portion 26 is formed at the boundary with 01. The recess 32 and the eaves 26 are evidence that the manufacturing method of the present embodiment has been used.

Nozzle Plate Bonding Step (FIG. 3): In the nozzle plate bonding step, the nozzle plate 10 is bonded to the master 201 after etching. The nozzle plates 10 are bonded together so that the nozzles 11 are positioned in the respective spaces of the cavities 21. As an adhesive for bonding, for example, an epoxy resin or the like is used. When the nozzle plate 10 is bonded, it is attached to a predetermined mold, and the ink jet recording head 1 is completed.

As described above, according to the first embodiment,
Since the eaves of the vibration plate generated in the process of forming the cavity are removed before bonding the nozzle plate, it is possible to prevent poor adhesion of the nozzle plate and clogging of the nozzle due to remaining pieces of the vibration plate. Therefore, by using the manufacturing method of the present embodiment, the yield of products can be improved and the cost of the inkjet recording head can be reduced.

<Second Embodiment> A second embodiment of the present invention solves the second problem.

The construction of the ink jet recording head and the like in this embodiment is the same as that in the first embodiment, and therefore the same members are denoted by the same reference numerals and description thereof will be omitted.

Next, a method of manufacturing the ink jet recording head according to the present embodiment will be described. In the second embodiment,
This relates to a modification of the manufacturing method according to the first embodiment. The steps up to the pressure chamber substrate etching step (FIG. 10B) are the same as those in the above-described embodiment, and thus the description thereof is omitted.

Resist Layer Forming Step (FIG. 6A): In the resist layer forming step, after the cavity 21 is formed, a resist layer is formed on the bottom of the cavity 21 (on the insulating film provided with the piezoelectric element in FIG. 6). 50 are provided. The resist layer 50 plays a role of protecting the diaphragm 301 from erosion of an etching solution for etching the insulating film 301. As a method for forming the resist layer 50, a resist must be provided at the bottom of the cavity 21. For example, a positive resist is applied using a method such as a spinner method or a spray method, and is thickly accumulated in a cavity to form a thin resist on an etching mask. Then, exposure is performed under such a condition that only the resist on the etching mask can be completely exposed, and the exposure is not sufficiently performed in the cavity where the resist is thickly stored. Finally, only the exposed portion is removed by development, and the unexposed portion is left as a resist layer 50.

Eaves removing step (FIG. 5B): The eaves removing step is performed in the same manner as the eaves removing step in the first embodiment (FIG. 5C). Depending on the etchant
Although the eaves portion 12 is removed, the insulating film 301 at the bottom of the cavity 21 is not etched because it is protected by the resist layer 50.

Removal Step (FIG. 6C): In the removal step, the resist layer 50 is removed. After the eaves portion 12 is removed, the resist layer 50 becomes unnecessary. Therefore, the resist layer 50 is sufficiently exposed and developed and removed, or the resist layer 50 is removed using a plasma ashing apparatus or the like. After removing the resist layer, the nozzle plate 10 is bonded by a bonding process as in the first embodiment (see FIG. 3).

As described above, according to the second embodiment, since the resist layer is provided in the cavity before the eaves portion is removed, the thickness of the diaphragm can be kept constant. Therefore, the yield of the product can be improved, and the cost of the ink jet recording head can be reduced.

<Other Modifications> The present invention can be applied in various modifications without depending on the above embodiments. For example, in the above embodiment, the silicon master is etched after the formation of the piezoelectric element, but the step of providing the piezoelectric element may be performed after the formation of the cavity.

The layer structure of the piezoelectric element is not limited to the above embodiment, but may have another layer structure.

The present invention can be applied not only to the manufacture of an ink jet recording head but also to any industrial field in which the eaves of an oxide film is a problem in etching a silicon wafer. That is, by applying the eaves removing step of the present invention, it is possible to prevent the generation of fragments of the oxide film left on the surface of the silicon wafer and to prevent the trouble caused by the fragments.

[0059]

According to the present invention, since the eaves of the vibration plate generated during the process of forming the pressure chamber are removed before the nozzle plate is bonded, poor adhesion of the nozzle plate and clogging of the nozzle can be prevented. And the cost of the ink jet recording head can be reduced.

According to the present invention, the eaves of the etching mask are removed, the presence or absence of etching of the diaphragm can be selected, and the compliance of the head can be adjusted. Therefore, the uniformity of the product is improved and the product yield is improved. And the cost of the ink jet recording head can be reduced.

[Brief description of the drawings]

FIG. 1 is a perspective view and a partial cross-sectional view of an ink jet recording head of the present invention.

FIG. 2 is a cross-sectional view illustrating a laminated structure of the piezoelectric element of the present invention.

FIG. 3 is a manufacturing process sectional view for explaining a method for manufacturing a piezoelectric element in the ink jet recording head of the present invention.

FIG. 4 is a cross-sectional view illustrating a manufacturing process for explaining a method for manufacturing the ink jet recording head according to the first embodiment. (A) is an insulating film forming step, (B) is a piezoelectric thin film forming step, and (C)
Denotes a piezoelectric element forming step.

FIG. 5 is a manufacturing process sectional view for explaining the method for manufacturing the ink jet recording head of the first embodiment. (A) is a diaphragm etching step, (B) is a pressure chamber etching step, and (C) is an eaves removing step.

FIG. 6 is a cross-sectional view showing a manufacturing process for explaining a method for manufacturing the ink jet recording head according to the second embodiment. (A) is a resist layer forming step, (B) is an eaves removing step and (C)
Is a removing step.

FIG. 7 is a diagram illustrating a problem in a conventional manufacturing method.

[Explanation of symbols]

REFERENCE SIGNS LIST 100 ink jet printer 10 nozzle plate 11 nozzle 20 pressure chamber substrate 21 cavity (pressure chamber) 22 side wall 23 reservoir 24 supply port 30 diaphragm 31 ink tank port 40 piezoelectric element 101 silicon Substrate 301: Silicon oxide (SiO ₂ ) film 302: Lower electrode film 303: Eave portion 401: Piezoelectric layer 402: Upper electrode film 501: Mask

Claims (8)

[Claims] 1. An ink jet recording head comprising: a pressure chamber substrate provided with a pressure chamber; a vibration plate provided on the pressure chamber substrate; and a piezoelectric element provided on the vibration plate. The inkjet recording head according to claim 1, wherein the diaphragm has a concave portion formed in a region exposed in the pressure chamber. 2. An eaves shape is formed at a boundary portion between the vibration plate and the pressure chamber substrate facing the pressure chamber because the vibration plate is eroded more than the pressure chamber substrate. 3. The ink jet recording head according to item 1. 3. Production of an ink jet recording head comprising: a pressure chamber substrate provided with a pressure chamber; a vibration plate provided on the pressure chamber substrate; and a piezoelectric element provided on the vibration plate. In the method, a diaphragm forming step of forming a diaphragm on one surface of a pressure chamber substrate for forming a pressure chamber; an etching mask forming step of forming an etching mask on the other surface of the pressure chamber substrate; A mask etching step of etching an etching mask according to the shape of the pressure chamber to expose the pressure chamber substrate; a pressure chamber substrate etching step of etching the exposed pressure chamber substrate until the diaphragm is exposed; The eaves portion of the etching mask formed at the opening end of the pressure chamber by the etching mask and the pressure chamber substrate is used as the etching mask. Method of manufacturing the ink jet recording head comprising: the eaves removal step of removing by etching the 択的, the. 4. A resist for forming a resist layer for preventing the diaphragm from being etched before the eaves removing step, on the pressure chamber side of the diaphragm exposed in the pressure chamber. 4. The method of manufacturing an ink jet recording head according to claim 3, further comprising: a forming step; and a removing step of removing a resist layer formed on the pressure chamber side of the diaphragm after the eave removing step. 5. The method according to claim 3, wherein, in the eaves removing step, the eaves portion of the etching mask is removed by an etching solution for etching the etching mask at a higher etching rate than the pressure chamber substrate. . 6. The method according to claim 3, wherein the etching solution is a mixture of a buffer such as ammonium fluoride and hydrofluoric acid at a predetermined ratio. 7. The method according to claim 3, wherein the etching mask is silicon oxide, and the pressure chamber substrate is formed of silicon. 8. The method according to claim 3, further comprising the step of forming a piezoelectric element sandwiched between electrode films on the vibration plate.