JPH11219900A - Aligner and method of exposure - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the overlay accuracy of the transferred image of a pattern on a substrate by effectively suppressing the occurrence magnification error or misalignment in the transferred image. SOLUTION: When lighting light EL is projected on the patterned surface of a mask R at a prescribed incident angle θ from an illumination system (12, M, and 44), the light EL is reflected by the patterned surface, and the reflected light is projected upon a substrate W by a projection optical system PO. Consequently, the pattern in a region on the mask R irradiated with the illuminating light is transferred onto the substrate W. When the pattern is transferred, a stage control system synchronously moves a mask stage RST and a substrate stage WST along a Y-direction, while adjusting the relative position of the mask R to the optical system PO in a Z-direction, based on prescribed positional information for adjustment. As a result, the occurrence of magnification error or misalignment in the transferred image of the pattern on the substrate resulting from the Z-displacement of the mask R can be suppressed effectively, and the overlay accuracy of the transferred image is improved, even though the mask side of the optical system PO is non-telecentric.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus and an exposure method, and more particularly, to an exposure apparatus and an exposure method used when a circuit device such as a semiconductor element or a liquid crystal display element is manufactured by a lithography process. .

[0002]

2. Description of the Related Art At present, at a semiconductor device manufacturing site,
The minimum line width is 0.3 using a reduction projection exposure apparatus, i.e., a so-called stepper, using i-line of a mercury lamp having a wavelength of 365 nm as illumination light.
Circuit devices of about 0.35 μm (64 M (mega) bit D-RAM and the like) are mass-produced. At the same time, 2
An exposure apparatus for mass-producing a next-generation circuit device having a 56-Mbit, 1-G (giga) -bit D-RAM class density and a minimum line width of 0.25 μm or less has been introduced.

As an exposure apparatus for manufacturing the next generation of circuit devices, a wavelength 248 from a KrF excimer laser light source is used.
An ultraviolet pulse laser beam having a wavelength of 193 nm or an ultraviolet pulse laser beam having a wavelength of 193 nm from an ArF excimer laser light source is used as illumination light. By scanning the wafer one-dimensionally relative to the projection field of view of the reduction projection optical system, a scanning exposure operation for transferring the entire reticle circuit pattern into one shot area on the wafer and an inter-shot stepping operation are repeated. A step-and-scan type scanning exposure apparatus has been developed.

There is no doubt that the degree of integration of semiconductor devices will be further increased in the future and will shift from 1 Gbit to 4 Gbit. In that case, the device rule will be about 0.1 μm, that is, about 100 nm L / S. With the exposure apparatus using the above-mentioned ultraviolet pulse laser light having a wavelength of 193 nm as illumination light, there are many technical problems to cope with this. Device rule (practical minimum line width)
The resolution of an exposure apparatus that represents the exposure wavelength λ and the numerical aperture N. A. Is represented by the following equation (1).

(Resolution) = k · λ / N. A. (1) Here, k is a positive constant called a “key factor” of 1 or less, and varies depending on characteristics of a used resist.

As is apparent from the above equation (1), it is extremely effective to reduce the wavelength λ to increase the resolution. In the description, this light is referred to as “EUV (Extreme Ultr
EUV using “aviolet) light” as exposure light
Exposure equipment development has begun, and such EU
V-exposure apparatuses have attracted attention as promising candidates for next-generation exposure apparatuses having a minimum line width of 100 nm.

[0007]

SUMMARY OF THE INVENTION In an EUV exposure apparatus,
In general, a reflective reticle is used, and the reflective reticle is irradiated with illumination light obliquely, and the reflected light from the reticle surface is projected onto a wafer through a projection optical system, thereby forming an illumination area on the reticle. The pattern is transferred onto the wafer. Further, in this EUV exposure apparatus, a ring-shaped illumination area is set on the reticle, and the reticle and the wafer are relatively scanned with respect to the projection optical system so that the entire surface of the pattern on the reticle is projected through the projection optical system to the wafer. A scanning exposure method of sequentially transferring images onto the substrate is adopted.

[0008] This is because, at a wavelength of light (5 to 15 nm) used in an EUV exposure apparatus, there is no material that transmits light efficiently without absorption. Also, because it is difficult to create a beam splitter, the illumination light for the reticle must be irradiated obliquely.

For this reason, the reticle side becomes non-telecentric, and the displacement of the reticle in the direction along the optical axis is longer than the length of the ring-shaped exposure area (the area on the wafer corresponding to the ring-shaped illumination area on the reticle). It appears as a magnification change in the direction and a position change in the short direction.

A description will be given with specific numerical values. Using EUV light with a wavelength of 13 nm as the exposure light, a resolution of 100 n
A projection optical system of mL / S is designed.

The above equation (1) can be transformed into the following equation (2).

N. A. = K · λ / (resolution) (2) Assuming that k = 0.8 now, from the equation (2), the resolution is 10
N.D. necessary to obtain 0 nm L / S. A. Is N. A.
It can be seen that = 0.104 ≒ 0.1. Of course, this N. A. Is a value on the wafer side, which is different from that on the reticle side.

Here, the projection magnification of the projection optical system is represented by i-line,
Assuming that the ratio is 4: 1, which is generally used in a conventional deep ultraviolet exposure apparatus (DUV exposure apparatus) using g-line, KrF excimer laser, or ArF excimer laser as exposure light, N.F. A. If the value is 0.1, the reticle side is a quarter of 0.025. This means that the illumination light applied to the reticle has an angle of about ± 25 with respect to the principal ray.
It means having a mrad spread. Therefore, in order to prevent the incident light and the reflected light from overlapping each other, the incident angle must be at least 25 mrad or more.

For example, in FIG. 14, if the incident angle θ (= outgoing angle θ) is 50 mrad, the displacement of the pattern surface of the reticle R in the Z direction (hereinafter also referred to as “the displacement of the reticle in the Z direction”) ΔZ The lateral shift ε of the circuit pattern drawn on the reticle R is expressed by the following equation (3).

Ε = ΔZ · tan θ (3) From this equation (3), for example, when the reticle R is displaced by 1 μm in the vertical direction (Z direction) in FIG. 14, the lateral displacement of the image on the reticle pattern surface is about 50 nm. It can be seen that a quarter of the 12.5 nm image shift occurs on the wafer. It is said that an allowable overlay error (overlay error) in a semiconductor process having a device rule of 100 nm L / S is 30 nm or less.
It can be said that it is very severe that an overlay error as large as 12.5 nm occurs only by displacement in the direction. That is, the overlay error can be caused by about 10 nm each due to other factors such as positioning accuracy of the reticle and the wafer (alignment accuracy), positioning accuracy of the wafer stage including so-called stepping accuracy, distortion of the projection optical system, and the like.

The reticle Z displacement in the Z direction is also caused by the parallelism of the reticle and the flatness of the reticle holder supporting the reticle.
The development of a technique for reducing the overlay error caused by the directional displacement is now urgently needed.

The present invention has been made under such circumstances, and a first object of the present invention is to provide an exposure apparatus capable of improving overlay accuracy.

It is a second object of the present invention to provide an exposure method capable of improving the overlay accuracy.

[0019]

According to the present invention, there is provided an exposure apparatus for transferring a pattern formed on a mask (R) onto a substrate (W) via a projection optical system (PO). A mask stage (RST) holding the mask, wherein the mask (R) is a reflective mask, the projection optical system (PO) is a reflective optical system, and a substrate stage (WST) holding the substrate. An illumination system (12, 30, M, 44) for irradiating exposure light (EL) at a predetermined incident angle to a pattern surface of the mask; and a mask pattern illuminated by the exposure light. In order to transfer onto the substrate via the projection optical system, while adjusting the position of the mask in the first axis direction which is the optical axis direction of the projection optical system based on predetermined adjustment position information, Mask stage and substrate stay Preparative said second axial stage control system that moves synchronously along a perpendicular to the first axial direction (8
0, 34, 62).

According to this, when the illumination system irradiates the illumination light for exposure at a predetermined incident angle to the pattern surface of the mask, the illumination light is reflected by the pattern surface of the mask, and the reflected exposure light is exposed. Illumination light is projected onto the substrate by a projection optical system including a reflection optical system, and the pattern of the region on the mask illuminated with the illumination light is transferred onto the substrate. When transferring the mask pattern, the stage control system adjusts the position of the mask in the first axis direction, which is the optical axis direction of the projection optical system, based on the predetermined adjustment position information, and moves the mask stage and the substrate stage together. Synchronous movement is performed along a second axis direction orthogonal to the first axis direction. Accordingly, the entire surface of the mask pattern is sequentially transferred onto the substrate by scanning exposure, and at this time, the position of the mask in the optical axis direction (first axis direction) of the projection optical system is adjusted based on the adjustment position information. In spite of the fact that the mask side of the projection optical system is non-telecentric, it is possible to effectively suppress the occurrence of a magnification error and a position shift in a transfer image of a pattern on a substrate due to the displacement of the mask in the optical axis direction. As a result, it is possible to improve the overlay accuracy.

According to a second aspect of the present invention, in the exposure apparatus according to the first aspect, the adjustment position information is a first position corresponding to a moving direction of the mask stage (RST) on the second axis. The stage control system includes the adjustment position information and the second adjustment position information, and the stage control system (80, 34, 62) moves the mask stage during the synchronous movement of the mask stage and the substrate stage (WST). For each direction, the position of the mask in the first axial direction is adjusted using the adjustment position information corresponding to the moving direction among the first adjustment position information and the second adjustment position information. It is characterized by the following.

According to this, in the stage control system, at the time of synchronous movement of the mask stage and the substrate stage, the first adjustment position information and the second adjustment position information are provided for each movement direction of the mask stage.
The position of the mask in the first axis direction is adjusted by using the adjustment position information corresponding to the moving direction of the adjustment position information of the above, so that the mask stage moves from one side to the other side along the second axis. When the displacement in the first axial direction during the synchronous movement is different due to mechanical factors (movement characteristics of the stage) between the movement to the other side and the movement from the other side to the one side, the effect is also affected. The first of the mask with high accuracy without receiving
The axial position adjustment can be performed, and it is possible to effectively suppress the occurrence of a magnification error or a position shift in a transferred image of a pattern on a substrate due to a displacement of a mask in an optical axis direction.

In these cases, for example, claim 3
As described above, the adjustment position information may be information measured in advance. In such a case, the first movement of the mask is performed during the synchronous movement of the mask stage and the substrate stage.
Since the adjustment can be performed by, for example, feedforward control based on information measured in advance without measuring the axial displacement, an adjustment error due to a control delay hardly occurs in the adjustment, and the first axis of the mask is adjusted. Components for adjusting the directional position can be simplified.

However, in the exposure apparatus according to claim 1 or 2, the measuring apparatus (R) for measuring the position of the mask (R) in the first axial direction as in the invention according to claim 4 is provided.
IFZ), the stage control system (80, 34, 62) controls the mask stage (RS
T) measuring the adjustment position information using the measurement device during the synchronous movement of the substrate stage (WST) and the substrate stage (WST), and adjusting the position of the mask in the first axial direction using the adjustment position information. You may do it.

In this case, various types of the measuring device are conceivable. For example, as in the invention described in claim 5, the measuring device irradiates the mask with a length measuring beam perpendicularly to the mask. An interferometer (RIFZ) that measures the position of the mask in the first axis direction by receiving the reflected light may be used. In such a case, the light is obliquely incident on the pattern surface of the mask at a predetermined incident angle and does not affect the exposure illumination light reflected at the same exit angle as the incident angle, and the interference measurement is performed by the exposure illumination light. It is possible to measure and adjust the position of the mask in the optical axis direction during the synchronous movement with high accuracy (for example, accuracy of several nm to 1 nm or less) without being affected by the long beam.

In this case, the irradiation position of the length measuring beam irradiated on the mask from the interferometer and the number of the length measuring beams are not particularly limited, but, for example, as in the invention according to claim 6 The interferometer (RIFZ) irradiates at least two measurement beams to the irradiation area (IA) of the exposure light of the mask (R), and irradiates the mask (R) at each irradiation position of each measurement beam. It is desirable to measure the position of R) in the first axis direction. In such a case, the two measurement beams are irradiated by the interferometer into the irradiation area of the exposure illumination light, which is the target area of the pattern transfer every moment, and the position of the mask in the first axis direction is changed at each position. As a result, based on the most accurate measurement data, it is possible to adjust not only the position in the first axial direction in the target area of the pattern transfer on the mask from time to time but also the inclination thereof. It is possible to further improve the overlay accuracy.

In each of the above-mentioned inventions, the interferometer irradiates a different beam in the direction of the second axis of the mask with a measurement beam, as in the invention of the seventh invention. The position of the mask in the first axis direction is measured for each irradiation position of each measurement beam. In such a case, at least in the second axial direction (synchronous movement direction), it becomes possible to adjust the positional shift and the tilt shift of the mask in the optical axis direction during the synchronous movement between the mask stage and the substrate stage.

In each of the inventions described in claims 5 to 7, as in the invention described in claim 8, the interferometer (RIF)
Z) may include a reference mirror fixed to the projection optical system (PO), and an interferometer main body arranged at a position distant from the projection optical system. In such a case, the main body of the interferometer is separated from the projection optical system. The adverse effects can be avoided.

Further, in the invention described in claim 4, as in the invention described in claim 9, the stage control system (80, 34, 62) uses the measured adjustment position information to perform the mask control. 11. The position in the first axial direction may be adjusted by feedforward control.
The stage control system may adjust the position of the mask in the first axial direction by feedback control using the measured adjustment position information. In the former case, the stage control system may perform a so-called look-ahead control that measures the position of the mask in the optical axis direction before the target area of the pattern transfer on the mask is rushed to the irradiation area of the exposure illumination light. Although it is necessary, the first of the mask is controlled by feedforward control based on the measured information.
Since the position in the axial direction can be adjusted, a control delay hardly occurs in the adjustment. In the latter case, the control delay is more likely to occur than in the former case, but in addition to the need for read-ahead control, etc., the position of the mask in the first axis direction can be adjusted with higher accuracy. it can.

[0030] The eleventh aspect of the present invention is directed to the first aspect.
In each of the inventions according to the first to tenth aspects, a first slit which is arranged close to a pattern surface of the mask (R) and defines a first illumination area (IA) on the mask to be irradiated with the exposure illumination light. (44a) and a second slit (4) that defines a second illumination area where the exposure illumination light is applied to a mark (for example, RM1, RM4) formed on the mask.
4b); a slit plate (44); a first position at which the exposure illumination light is applied to the first slit (44a); A switching mechanism (46) for switching between a second position irradiated to the two slits (44b) is further provided.

According to this, in the switching mechanism, the slit plate is switched to the first position at the time of exposure so that the illumination light for exposure is applied to the first slit defining the first illumination area on the mask. At the time of the alignment, the slit plate is switched to the second position so that the illumination light for exposure is applied to the second slit that defines the second illumination area to be applied to the mark portion formed on the mask. be able to. This makes it possible to set an appropriate illumination area at the time of exposure and at the time of alignment using the same slit plate, and it is not necessary to provide a slit plate for each purpose.

[0032] The invention described in claim 12 provides the invention as set forth in claims 1-1.
0, the mask stage (RS
T), the substrate stage (WST), and the projection optical system (PO) are supported by separate support members, and include a plane including the second axis orthogonal to the first axis of the mask stage and the substrate stage. Further comprising an interferometer system (70) for measuring a position in the second axis, the second axis being orthogonal to the first axis of the mask stage and the substrate stage with respect to a member supporting the projection optical system. Is characterized by measuring a relative position in a plane including According to this, the mask stage, the substrate stage, and the projection optical system are supported by separate support members. Since the relative position in the plane including the second axis orthogonal to the axis is measured, the positions of the mask stage and the substrate stage can be managed with reference to the member supporting the projection optical system, and no inconvenience occurs. .
That is, since the mask stage, the substrate stage, and the projection optical system are not mechanically connected, the mask stage,
The reaction force due to acceleration / deceleration when the substrate stage moves and the vibration of the support member of each stage adversely affect the imaging characteristics of the projection optical system. Does not adversely affect the behavior of the other stage.

[0033] The invention according to claim 13 is the invention according to claims 1-1.
0, the exposure illumination light (EL)
Is light in the soft X-ray region, and the substrate stage (WST)
An opening (SLT) formed by a fluorescent substance (63), a reflective layer (64) or an absorption layer of the exposure illumination light on the surface thereof, and the exposure illumination light through the opening. Is further provided with an aerial image measuring device (FM) having a photoelectric conversion element (PM) for photoelectrically converting light emitted from the fluorescent substance when the fluorescent substance reaches the fluorescent substance. According to this, on the substrate stage, a fluorescent substance, an opening formed on the surface by a thin film of a reflective layer or an absorbing layer of the exposure illumination light, and the exposure illumination light reaches the fluorescent substance via the opening. Aerial image measuring device having a photoelectric conversion element for photoelectrically converting light emitted from the fluorescent substance when the light is emitted, as described above, although there is no substance that normally transmits light in the soft X-ray region, Even when such light is used as illumination light for exposure, it is possible to measure an aerial image using the illumination light for exposure. Therefore, the projection position of the mask pattern on the substrate stage can be easily obtained by using this aerial image measuring device.

In each of the first to twelfth aspects of the present invention, when the exposure illumination light (EL) is light in a soft X-ray region as in the fourteenth aspect, the mask ( It is preferable that the pattern of R) be formed of the exposure illumination light absorbing substance formed on the reflection layer of the exposure illumination light. In such a case, since the pattern is formed (patterned) by the absorption material of the illumination light for exposure, the multilayer film as the reflective material for the soft X-ray region which is the illumination light for exposure is patterned. Unlike this, the pattern can be repaired in the case of failure. Also, by appropriately selecting the material of the absorbing substance,
The reflection layer and the absorbing substance of the above-mentioned exposure illumination light can be set to have substantially the same reflectance with respect to the length measurement beam (for example, light in the visible region) of the interferometer. The position of the mask in the optical axis direction can be measured.

According to a fifteenth aspect of the present invention, a mask (R)
An exposure optical system (P) having an optical axis inclined with respect to a first direction orthogonal to the mask, and irradiating the mask with illumination light.
RM, IM, 30, M, 44); a projection optical system (PO) for projecting the illumination light reflected by the mask onto the substrate
Driving devices (RST, WS) for synchronously moving the mask and the substrate at a speed ratio according to the magnification of the projection optical system
T, 80, 34, 62); a correction device (80, 34) for moving the mask relative to the projection optical system in the first direction in order to correct an image magnification error of the pattern during the synchronous movement. , RST).

According to this, the illumination optical system irradiates the mask with illumination light in the optical axis direction inclined with respect to the first direction orthogonal to the mask. That is, the illumination light from the illumination optical system is applied to the mask from an oblique direction. Then, the illumination light is reflected on the mask surface, and the reflected light is projected onto the substrate by the projection optical system, and the pattern on the mask illuminated with the illumination light is transferred onto the substrate. In transferring the mask pattern, the driving device synchronously moves the mask and the substrate at a speed ratio corresponding to the magnification of the projection optical system. During this synchronous movement, the correction device moves the mask relative to the projection optical system in the first direction in order to correct the image magnification error of the pattern. As a result, the entire surface of the mask pattern is sequentially transferred onto the substrate by scanning exposure, and at this time, the mask is moved relative to the projection optical system in the first direction with respect to the projection optical system in order to correct an image magnification error of the pattern. Therefore, it is possible to effectively suppress the occurrence of a magnification error in the transfer image of the pattern on the substrate due to the displacement of the mask in the optical axis direction,
As a result, it is possible to improve the overlay accuracy.

In this case, the illumination optical system (PRM, IM, 30, M,
44) a wavelength of 5 to 15 nm as the illumination light (EL);
The projection optical system (PO) may include only a plurality of reflective optical elements. In such a case, the pattern of the mask is transferred onto the substrate through the projection optical system including only the reflection optical element using EUV light as the illumination light for exposure, so that a very fine pattern, for example, 100 nm L / S
High-accuracy transfer of patterns becomes possible.

In the exposure apparatus according to claim 15 or 16, as in the invention according to claim 17, the correction device (80, RST, 34, RIFZ) is provided in the first direction of the mask (R). Measurement device (RI
When FZ) is provided, the mask may be moved based on the output of the measuring device.

The invention according to claim 18 is a mask (R)
An exposure optical system (PRM) for irradiating the mask with illumination light whose principal ray is inclined with respect to a first direction orthogonal to the mask (R). , IM, 30, M, 44); a projection optical system (PO) for projecting illumination light emitted from the mask onto the substrate; Drive (RS) that moves synchronously with the substrate
T, WST, 80, 34, 62); and a correction device (80, RST, 34) for compensating for a change in image magnification of the pattern caused by movement of the mask.

According to this, the mask is irradiated from the illumination optical system with illumination light whose principal ray is inclined with respect to the first direction orthogonal to the mask. That is, the illumination light from the illumination optical system is applied to the mask from an oblique direction. Then, illumination light whose principal ray is inclined with respect to a first direction orthogonal to the mask emitted from the mask is projected onto the substrate by the projection optical system, and the pattern on the mask illuminated with the illumination light is transferred onto the substrate. Is done. When transferring this mask pattern,
The driving device synchronously moves the mask and the substrate at a speed ratio according to the magnification of the projection optical system. The change in the image magnification of the pattern caused by the movement of the mask during the synchronous movement is compensated by the correction device. Therefore, the entire surface of the mask pattern is sequentially transferred onto the substrate by scanning exposure, and at this time, the image magnification error of the pattern is compensated for by the correction device. The occurrence of a magnification error can be effectively suppressed, and as a result, the overlay accuracy can be improved.

In this case, the mask (R) is a reflection type mask, and the illumination optical system (PRM, IM, 30, M, 44) is used as the illumination light. The mask may be irradiated with EUV light having a wavelength of 5 to 15 nm, and the projection optical system (PO) may include only a plurality of reflection optical elements (M1 to M4). In such a case, since the pattern of the mask is transferred onto the substrate through the projection optical system including only the reflection optical element using EUV light as the illumination light for exposure, a very fine pattern, for example, a 100 nm L / S pattern High-accuracy transfer is possible.

In the exposure apparatus according to claim 18 or 19, as in the invention according to claim 20, the correction device (RST, 80, 34) includes an object plane of the projection optical system during the synchronous movement. A driving member (RST, 34) for moving the mask (R) in the first direction on the side may be included.

In this case, it is sufficient that the driving member moves the mask in the first direction on the object plane side of the projection optical system during the synchronous movement. The drive member may tilt the mask relatively to an object plane of the projection optical system. In such a case, during the synchronous movement, the driving member
In addition to moving the mask in the first direction on the object plane side of the projection optical system, tilt adjustment with respect to the object plane of the projection optical system becomes possible. In addition, it is possible to effectively suppress the occurrence of a magnification error or a position shift in a transferred image of a pattern on a substrate due to a displacement of a mask in an optical axis direction, thereby improving overlay accuracy. It becomes possible.

According to a twenty-second aspect of the present invention, a mask (R)
An exposure optical system (PRM, IM, 30,...) For irradiating the mask with illumination light inclined with respect to a perpendicular line of the mask.
M, 44); and a projection optical system (PO) for projecting the illumination light reflected by the mask onto the substrate, wherein the illumination optical system is close to the mask on the incident side of the illumination light. A field stop (44) that defines an irradiation area of the illumination light on the mask, and adjusts at least one of a shape, a size, and a position of the illumination area by the field stop. It is characterized by the following.

According to this, the illumination optical system irradiates the mask with illumination light inclined with respect to the normal to the mask. That is, the illumination light is emitted obliquely from the illumination optical system to the mask. Then, the illumination light reflected by the mask is projected onto the substrate by the projection optical system, and the pattern of the mask is transferred onto the substrate. In this case, the illumination optical system
A field stop that is arranged close to the illumination light incident side with respect to the mask and that defines an irradiation area of the illumination light on the mask; at least one of the shape, size, and position of the illumination area is determined by the field stop; In this case, the degree of freedom of the cross-sectional shape of the illumination light irradiated from the illumination optical system toward the mask is increased as compared with the case where the field stop is not provided. The degree of freedom in design is improved.
In particular, when the position of the irradiation area of the illumination light on the mask is adjusted by the field stop, the same illumination light can be used for another purpose, for example, exposure, mark position detection, and the like.

In this case, as in the invention according to claim 23, the field stop (44) is a first opening (44a) for irradiating a part of the pattern with the illumination light (EL).
And a second opening (44b) for irradiating the illumination light to marks (for example, RM1 and RM4) formed on the mask, and a switching mechanism (46) for switching between the first opening and the second opening. ) Is desirable. In such a case, the switching mechanism switches the field stop to the first opening side at the time of exposure so that the illumination light irradiates a part of the pattern on the mask, and aligns the mask (alignment).
At times, the field stop can be switched to the second opening side so that the illumination light irradiates the mark formed on the mask. Thus, it is possible to set an appropriate illumination area at the time of exposure and at the time of alignment using the same field stop.

According to a twenty-fourth aspect of the present invention, the mask (R)
In an exposure method for transferring a pattern formed on the mask onto the substrate via a projection optical system (PO) while synchronously moving the substrate and the substrate (W), a reflection type mask is prepared as the mask (R). Using a reflection optical system as the projection optical system (PO), irradiating the pattern surface of the mask with exposure illumination light at a predetermined incident angle θ, and irradiating the pattern of the mask with the exposure illumination light. Is transferred onto the substrate via the projection optical system, the position of the mask (R) in the first axis direction which is the optical axis direction of the projection optical system is adjusted based on predetermined adjustment position information. The mask and the substrate are synchronously moved along a second axis direction orthogonal to the first axis direction.

According to this, the pattern surface of the mask is irradiated with the illumination light for exposure at a predetermined incident angle, and the pattern of the mask illuminated by the illumination light for exposure is transferred onto the substrate via the projection optical system. At this time, while adjusting the position of the mask in the first axis direction which is the optical axis direction of the projection optical system based on the predetermined adjustment position information, the mask and the substrate are moved in the second axis direction orthogonal to the first axis direction. Are moved synchronously. Therefore, the entire surface of the mask pattern is sequentially transferred onto the substrate by scanning exposure, and at this time, the position of the mask in the optical axis direction (first axis direction) of the projection optical system is adjusted based on the adjustment position information. Effectively eliminates magnification errors and positional deviations in the transferred image of the pattern on the substrate due to the displacement of the mask in the optical axis direction even though the mask side of the projection optical system (reflection optical system) is non-telecentric. As a result, the overlay accuracy can be improved.

In this case, as in the invention according to the twenty-fifth aspect, the adjustment position information includes the first adjustment position information corresponding to the moving direction of the mask (R) on the second axis. The first adjustment position information and the second adjustment position for each of the mask movement directions during the synchronous movement of the mask (R) and the substrate (W). The position of the mask in the first axial direction may be adjusted using the adjustment position information corresponding to the moving direction in the information. In such a case, at the time of synchronous movement between the mask and the substrate, for each moving direction of the mask, one of the first adjusting position information and the second adjusting position information corresponding to the moving direction corresponds to the adjusting position information. Is used to adjust the position of the mask in the first axis direction, so that when the mask moves from one side to the other side along the second axis and when it moves from the other side to the one side, the mask moves synchronously. Even if the position displacement in the first axial direction differs due to mechanical factors (movement characteristics of the stage), etc., the position of the mask in the first axial direction can be adjusted with high accuracy without being affected by the displacement. Accordingly, it is possible to effectively suppress the occurrence of a magnification error or a position shift in a transfer image of a pattern on a substrate due to the displacement of the mask in the optical axis direction.

In the exposure method according to the twenty-fourth or twenty-fifth aspect, as in the twenty-sixth aspect, the position information for adjustment may be information measured in advance, or the twenty-seventh aspect. As described in the invention, the adjustment position information is measured during the synchronous movement of the mask and the substrate, and the first position of the mask is determined using the adjustment position information.
The position in the axial direction may be adjusted. In the former case, during the synchronous movement between the mask and the substrate, the displacement can be adjusted by, for example, feedforward control based on information measured in advance without measuring the displacement in the first axial direction of the mask. During the adjustment, an adjustment error due to a control delay is less likely to occur, and a component for adjusting the position of the mask in the first axial direction can be simplified. Also,
In the latter case, the position of the mask in the first axis direction can be adjusted with high accuracy by feedback control using information measured during the synchronous movement.

According to a twenty-eighth aspect of the present invention, the mask (R)
In the exposure method for transferring the pattern of (1) onto the substrate (W) via the projection optical system (PO), the mask is irradiated with illumination light whose principal ray is inclined with respect to a direction orthogonal to the mask. In synchronization with the relative movement of the mask with respect to light, the substrate is relatively moved with respect to the illumination light reflected by the mask and passing through the projection optical system, and the synchronous movement of the mask and the substrate is performed. A change in image magnification of the pattern caused by the change is compensated. Here, the change in the image magnification of the pattern caused by the synchronous movement between the mask and the substrate means the change in the image magnification of the pattern caused by the movement of the mask during the synchronous movement, mainly the movement of the projection optical system in the optical axis direction. I do.

According to this, since the change in the image magnification of the pattern caused by the synchronous movement between the mask and the substrate is compensated, the displacement of the mask in the optical axis direction is achieved despite the fact that the object plane side of the projection optical system is non-telecentric. As a result, it is possible to effectively suppress the occurrence of a magnification error or a position shift in a transferred image of a pattern on a substrate, and as a result, it is possible to improve the overlay accuracy.

According to a twenty-ninth aspect of the present invention, a mask (R)
An exposure optical system (PRM, IM, 30, M, 44) for irradiating illumination light onto the pattern surface of the mask while tilting the pattern surface onto the substrate (W).
A projection optical system (PO) for projecting illumination light emitted from the mask onto the substrate; and a driving device for synchronously moving the mask and the substrate at a speed ratio corresponding to a magnification of the projection optical system ( RST, WST, 80, 34, 62); at least one of a position of the mask in a direction orthogonal to an object plane of the projection optical system and a relative inclination of the mask with respect to the object plane during the synchronous movement. (80, RIFZ, 34, RST).

According to this, illumination light is emitted from the illumination optical system at an angle to the pattern surface of the mask. That is, the illumination light from the illumination optical system is applied to the pattern surface of the mask obliquely. Then, the illumination light is reflected on the mask surface, and the reflected light is projected onto the substrate by the projection optical system, and the pattern on the mask illuminated with the illumination light is transferred onto the substrate. In transferring the mask pattern, the driving device synchronously moves the mask and the substrate at a speed ratio corresponding to the magnification of the projection optical system. During this synchronous move,
The adjusting device adjusts at least one of a position of the mask in a direction orthogonal to the object plane of the projection optical system and a relative inclination of the mask with respect to the object plane. Thereby, the entire surface of the mask pattern is sequentially transferred onto the substrate by scanning exposure, and at this time, the position of the mask in the direction orthogonal to the object plane of the projection optical system and the relative inclination of the mask with respect to the object plane are adjusted by the adjusting device. Therefore, it is possible to effectively suppress the occurrence of a magnification error or distortion in the transfer image of the pattern on the substrate due to the displacement or inclination of the mask in the optical axis direction, and as a result, The alignment accuracy can be improved.

The invention according to claim 30 is an exposure apparatus for transferring a pattern formed on a reflection type mask (R) onto a substrate (W), wherein an odd number is provided between the reflection type mask and the substrate. A projection optical system (PO ') having a plurality of reflection surfaces (M5 to M9); a mask stage (RST) holding the reflection mask; and a projection optical system on the same side as the reflection mask. Substrate stage (W
ST); and a drive system (80, 34, 62) for driving the mask stage and the substrate stage substantially in a predetermined direction during scanning exposure of the substrate.

According to this, since the substrate stage for holding the substrate is arranged on the same side of the projection optical system as the reflection type mask, the mask stage and the substrate stage are connected by the same support member (stage base). Can be supported. Further, for example, when the mass ratio between the substrate stage and the mask stage is the same as the projection magnification, at the time of scanning exposure, the drive system moves the mask stage and the substrate stage to a speed ratio corresponding to the projection magnification of the projection optical system. By driving in the opposite direction substantially along the predetermined direction, the law of conservation of momentum is established and the reaction force acting on the support member (stage base) by driving the mask stage and the support member by driving the substrate stage The acting reaction force is canceled out, and the synchronization error between the two stages becomes almost zero. This is effective in preventing the pattern transfer image on the substrate from being displaced due to the synchronization error and the vibration of the supporting member. , And as a result, the overlay accuracy can be improved.

For example, when the mass ratio between the substrate stage and the mask stage is different from the projection magnification, both stages are supported by a movable stage base that moves freely according to the reaction force of their driving force. When the mask stage and the substrate stage are driven substantially along a predetermined direction by the drive system during the scanning exposure of the substrate, the movable stage is movable according to the magnitude and direction of the resultant force of the reaction force of the driving forces of both stages. The mold stage base moves relative to the fixed member,
Since the momentum of the system including the mask stage, the wafer stage and the movable stage base is preserved, and the movement of the center of gravity of the entire system and the resulting unbalanced load do not occur, the synchronization error between the two stages becomes almost zero as described above. Become. As a result, it is possible to effectively suppress the occurrence of displacement in the pattern transfer image on the substrate, and as a result, it is possible to improve the overlay accuracy.

In this case, when the mask stage and the substrate stage are arranged on different surfaces, the reaction force caused by the drive of both stages exerts a rotational momentum on the support member, and therefore the influence of the rotational moment. It is necessary to provide some device for removing the noise, for example, an active vibration isolation table.

In this sense, the mask stage (RST) and the substrate stage (RST) may be configured as described above.
(WST) are arranged on the same surface, and the driving system
During the scanning exposure of the substrate, it is preferable that the mask stage and the substrate stage are driven in opposite directions on the same straight line substantially along a predetermined direction. In such a case, at the time of scanning exposure, the drive system drives the mask stage and the substrate stage in opposite directions on the same line substantially along the predetermined direction at a speed ratio according to the projection magnification of the projection optical system. For the same reason as described above, the synchronization error between the two stages becomes almost zero, and the moment applied to the support member also becomes zero.
An expensive active anti-vibration table is not required.

In the exposure apparatus according to each of the inventions described in claims 30 and 31, as in the invention described in claim 32, the illumination light (EL) is inclined to the reflection type mask (R) by inclining its principal ray. Illumination optical system for irradiation (PRM, IM, 3
0, M, and 44), the driving system may relatively drive the reflective mask and the substrate relative to the illumination light. In such a case, the illumination optical system irradiates the mask with illumination light whose principal ray is inclined. That is, the illumination light from the illumination optical system is applied to the mask from an oblique direction. Then, illumination light emitted from the mask is projected onto the substrate by the projection optical system, and the pattern on the mask illuminated with the illumination light is transferred onto the substrate.

In this case, a diaphragm member (44) for defining an irradiation area of the illumination light (EL) on the reflection type mask (R) in an arc slit shape is further provided. You may have. In such cases,
Since the irradiation area of the illumination light on the reflective mask is defined by an aperture member in the shape of an arc slit, a cross section of the illumination light irradiated from the illumination optical system toward the reflection mask as compared with the case without the aperture member The degree of freedom of the shape is increased, and accordingly, the degree of freedom of designing the optical element constituting the illumination optical system is improved.

In the exposure apparatus according to each of the inventions described in claims 32 and 33, as in the invention described in claim 34, the illumination light has a wavelength of 5 to 15 nm,
The projection optical system may include only a plurality of reflection optical elements. In such a case, EUV is used as the illumination light.
Since light is used to transfer the pattern of the mask onto the substrate via a projection optical system consisting of only a plurality of reflective optical elements,
It is possible to transfer a very fine pattern, for example, a 100 nm L / S pattern with high accuracy.

The invention according to claim 35 is an exposure apparatus for transferring a pattern formed on a reflective mask (R) onto a substrate (W) via a projection optical system (PO), wherein A stage system (RST, RST) that synchronously moves the reflective mask and the substrate at a speed ratio according to the magnification of the optical system
WST, 80, 34, 62); a holding member (R) provided in the stage system and holding the reflective mask.
H), wherein the holding member is made of a material having substantially the same linear expansion coefficient as the substrate material of the reflective mask.

According to this, by the stage system,
The reflective mask and the substrate are synchronously moved at a speed ratio according to the magnification of the projection optical system, and scanning exposure is performed. During this scanning exposure, thermal expansion occurs in the reflective mask and the holding member due to a rise in temperature due to irradiation of illumination light and the like, but the holding member is made of a material having a linear expansion coefficient substantially the same as the substrate material of the reflective mask. Since it is configured, a force (thermal stress) that tends to shift between the two does not act.

[0065]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment A first embodiment of the present invention will be described below with reference to FIGS.

FIG. 1 schematically shows the entire configuration of an exposure apparatus 10 according to the first embodiment. The exposure apparatus 10 is a projection exposure apparatus that performs an exposure operation by a step-and-scan method using light in a soft X-ray region (EUV light) having a wavelength of 5 to 15 nm as exposure illumination light EL.
In the present embodiment, as will be described later, a projection optical system PO that projects a reflected light beam from a reticle R as a mask on a wafer W vertically is used.
The projection direction of the illumination light EL from the projection optical system PO onto the wafer W is referred to as the optical axis direction of the projection optical system PO. Is described as a Y-axis direction, and a direction perpendicular to the paper surface is described as an X-axis direction.

The exposure apparatus 10 projects a partial image of a circuit pattern drawn on a reflective reticle R as a mask onto a wafer W as a substrate through a projection optical system PO, and Is scanned relative to the projection optical system PO in a one-dimensional direction (here, the Y-axis direction), so that the entire circuit pattern of the reticle R is transferred to the wafer W.
The image is transferred to each of the plurality of upper shot areas by a step-and-scan method.

The exposure apparatus 10 includes a light source device 12 that emits the EUV light EL horizontally along the Y direction.
A mirror M (reflecting the illumination optical system) that reflects the EUV light EL from A reticle stage RST for holding the reticle R, and a projection optical system P including a reflection optical system for projecting the EUV light EL reflected on the pattern surface of the reticle R perpendicularly to the surface to be exposed of the wafer W.
O, a wafer stage WST for holding the wafer W, focus sensors (14a, 14b), an alignment optical system ALG, and the like.

As shown in FIG. 2, the light source device 12 includes a light source 16 and a part of an illumination optical system (PRM, IM, 30).
It is composed of The light source 16 includes, for example, a high-power laser 20 such as a YAG laser or an excimer laser excited by a semiconductor laser, a condensing lens 22 for condensing a laser beam L from the high-power laser 20 at a predetermined converging point, And an EUV light generating substance 24 such as a copper tape disposed at the light spot.

Here, the mechanism of generation of EUV light will be briefly described.
Is irradiated on the EUV light generating substance 24 disposed at the converging point of the condensing lens 22, the EUV light generating substance 24 becomes high temperature by the energy of the laser light, is excited into a plasma state, and is brought into a low potential state. The EUV light EL is emitted during the transition.

Since the EUV light EL generated in this manner diverges in all directions, a parabolic mirror PRM is provided in the light source device 12 for the purpose of condensing the EUV light EL. The EUV light EL is collected by the PRM and converted into a parallel light flux. An EUV light reflection layer for reflecting EUV light is formed on the inner surface of the parabolic mirror PRM, and a cooling device 26 is attached to the back surface. As the cooling device 26, a device using a cooling liquid is preferable from the viewpoint of cooling efficiency, but is not limited to this. Metal is suitable for the material of the parabolic mirror PRM in terms of heat conduction. It is known that, as a EUV light reflecting layer formed on the surface of a parabolic mirror PRM, a multilayer film in which two types of substances are alternately laminated is used to reflect only light of a specific wavelength. For example, molybdenum Mo
Dozens of layers of Si
It is known that EUV light is selectively reflected. Light of a wavelength not reflected is absorbed by the multilayer film or the like and converted into heat, so that the temperature of the parabolic mirror PRM increases. In order to cool the parabolic mirror PRM, the cooling device 26 is required. The EUV light EL converted into parallel light by the parabolic mirror PRM is a parallel light having a circular cross section perpendicular to the optical axis and a uniform intensity distribution.

The light source device 12 further includes an illumination mirror IM that reflects the EUV light EL converted into the parallel light and deflects it toward the folding mirror M in FIG. The rear side in the traveling direction of the EUV light EL (FIG. 2)
And a wavelength selection window 30 disposed on the right side of the drawing in FIG. As shown in FIG. 2, the illumination mirror IM has a curved surface on the side irradiated with the EUV light EL, and two kinds of materials are alternately laminated on the curved surface (for example, molybdenum Mo and silicon). Dozens of layers of Si coating)
A reflective layer made of a multilayer film is formed, and the EUV light reflected by the reflective layer is designed to be just a narrow slit on the reticle R.

An arc-shaped illumination area having a predetermined area to be described later (an illumination area having a shape obtained by extracting a part of a ring-shaped illumination area) is used to illuminate a pattern surface of a reticle R described later in a vertical direction in the plane of FIG. , The pattern surface of the reticle R is just the focal plane. In this case, since the emission source of the EUV light EL has a finite size, the EUV light EL has a width of about 1 mm to 10 mm on the focal plane even if the pattern surface of the reticle R is a focal plane. Have. Therefore, it is not too thin to illuminate the arc-shaped illumination area. On the back side of the reflection surface of the illumination mirror IM, a cooling device 28 similar to the cooling device 26 described above is provided.

Here, the wavelength selection window 30 is provided for the purpose of cutting visible light. This is because EUV reflective films composed of multilayer films have a very sharp wavelength selectivity for wavelengths near EUV light and selectively reflect only specific wavelengths used for exposure. Will be similarly reflected. This is called reticle R or projection optical system PO
The mirror (which will be described later) forming the reticle R and the projection optical system PO due to unnecessary energy, or unnecessary light is transferred onto the wafer W in the worst case. Since the image may be deteriorated, an attempt is made to prevent such a situation from occurring.

FIG. 3 shows the light source device 12 shown in FIG. 2 as viewed from one side in the Y direction (left side in FIG. 2). In FIG. 3, the folding mirror M of FIG. The reflection surface of the illumination mirror IM is not shown in FIG. 3, but has a rectangular shape when viewed from the back side of the paper of FIG. That is, the illumination mirror IM has a concave curved surface in FIG. 2 and a rectangular shape in FIG.
Has the same shape as a part of the inner peripheral surface of the cylinder. In this case, the EUV light EL is converged in the plane of FIG. 2 but remains parallel in the plane of FIG. 3, so that the length in the left-right direction in FIG. It is the length in the longitudinal direction. It should be noted that even though the light source is parallel, the spatial coherency is not necessarily zero because the size of the light source is finite as described above.

Returning to FIG. 1, the reticle stage RST
Although not shown in FIG. 1, is actually arranged on a reticle stage base 32 arranged along the XY plane as shown in FIG. The reticle stage base 32 is supported by floating. The reticle stage RST is a magnetic levitation type two-dimensional linear actuator 3
4 is driven by a predetermined stroke in the Y direction, and is also driven by a small amount in the X direction and the θ direction (rotation direction around the Z axis). The reticle stage RST is configured to be driven by a minute amount in the Z direction and the tilt direction with respect to the XY plane by the magnetic levitation type two-dimensional linear actuator 34.

A permanent magnet (not shown) is provided at the bottom of the periphery of the reticle stage RST. A floating type two-dimensional linear actuator 34 is configured,
The main controller 80, which will be described later, controls the current flowing through the coil 34a to thereby control the current of the reticle stage RST.
Position and orientation control in the dimensional direction is performed.

The reticle stage RST includes a reticle holder RH for holding the reticle R facing the reticle stage base 32 and a stage body 35 for holding the peripheral portion of the reticle holder RH, as shown in FIG.
And a temperature control unit 36 provided inside the stage main body 35 on the back side (upper side) of the reticle holder RH to control the temperature of the reticle holder RH. As the reticle holder RH, a reticle holder of an electrostatic chuck type is used. This is because the exposure apparatus 10 of the present embodiment is actually housed in a vacuum chamber (not shown) because the EUV light EL is used as the illumination light for exposure. Because it cannot be used. Reticle holder RH
The material may be a material used in a conventional DUV exposure apparatus, such as low expansion glass or ceramic.

A plurality of temperature sensors 38 are arranged at predetermined intervals on the reticle suction surface of the reticle holder RH, and the temperature of the reticle R is accurately measured by these temperature sensors 38. The controller 36 performs temperature control so as to maintain the temperature of the reticle R at a predetermined target temperature. As a cooling device constituting the temperature control unit 36, a liquid cooling type in which a cooling liquid is drawn in from outside through a flexible tube, a method using an electronic element such as a Peltier element, and a heat pipe such as a heat pipe. A method using an exchanger can be adopted.

The side surface of the reticle stage RST on one side in the Y direction is mirror-finished to form a reflection surface 40a for light in the visible region. Although not shown in FIG. 4, as shown in FIG. 6, reticle stage RS
The side surface on one side in the X direction of T is also mirror-finished to form a reflection surface 40b for light in the visible region. And
In this exposure apparatus 10, the position of the reticle stage RST in the XY plane is managed by an interferometer system that irradiates the reflection surfaces 40a and 40b with a measurement beam, similarly to the exposure apparatus using a conventional DUV light source. This interferometer system will be described later in detail.

On the surface (pattern surface) of reticle R, E
A reflection film that reflects UV light is formed. This reflection film is, for example, a multilayer film in which two kinds of substances are alternately laminated. Here, a reflective film having a reflectance of about 70% for EUV light having a wavelength of 13 nm is formed using a multilayer film of molybdenum Mo and silicon Si. A material that absorbs EUV light is applied on one surface of the reflective film, and patterning is performed. When a reflective object such as a multilayer film is patterned, it is impossible to repair the failure when it fails. On the other hand, when the patterning is performed by providing an absorbing layer, the pattern can be repaired because the process can be redone. Since most existing substances do not reflect EUV light, they can be used for absorbing layers. In the present embodiment, as described later, laser interferometers (RIFZ1 to RIFZ3) are used to measure the position of the reticle R in the Z direction. Therefore, measurement beams (light in the visible region) from these laser interferometers are used. The absorption layer is formed of a substance that can provide the same reflectance as that of the reflection layer. In addition, the criteria for selecting the material for forming the absorbing layer include ease of patterning, adhesion to the reflective layer, and small changes over time due to oxidation and the like.

FIG. 5 shows an example of the reticle R. The rectangular area at the center in the figure is the pattern area PA.
It is. The hatched arc-shaped area is the arc-shaped illumination area IA irradiated with the EUV light EL as the illumination light for exposure. Here, the reason why the exposure is performed using the arc-shaped illumination area is that only the area where the various aberrations of the projection optical system PO described later are the smallest can be used. At both ends in the X direction of the pattern area PA of the reticle R, reticle alignment marks RM1 to RM6 as alignment marks are formed at predetermined intervals along the Y direction. Reticle alignment marks RM1 and RM4, RM2 and R
M5, RM3, and RM6 are respectively arranged substantially along the X direction.

As is apparent from FIG. 5, when the arc-shaped illumination area IA is used, it is not practical to perform the batch exposure (still exposure), and in this embodiment, the scanning exposure is performed as described later. Will be

The material of the reticle R is not particularly limited since the reflective layer is formed on the surface of the reticle R as described above. As a material of the reticle R, for example, low expansion glass, quartz glass (including, for example, Zerodur (trade name) of Schott Co., and ULE (trade name) of Corning Co., Ltd.), ceramics, and silicon wafer can be considered. As a criterion for selecting this material, for example, the same material as the material of the reticle holder RH may be used as the material of the reticle R. In such a case, thermal expansion occurs in the reticle R and the reticle holder RH due to a temperature rise due to irradiation of the exposure illumination light EL and the like. However, if both materials are the same, they expand by the same amount. There is a merit that a force (thermal stress) that tries to shift does not work. The present invention is not limited to this, and the same effect can be obtained by using different materials having the same linear expansion coefficient as the material of the reticle R and the reticle holder RH. For example, reticle R
Use of silicon carbide (SiC) for the reticle holder RH. When a silicon wafer is used as the material of the reticle R, there is also an advantage that a process device such as a pattern drawing device, a resist coating device, and an etching device can be used as it is. In this embodiment, for this reason, a silicon wafer is used as the material of the reticle R, and the reticle holder is formed of SiC.

Returning to FIG. 1, below the reticle R (on the EUV light incident side), a movable blind 42 and a slit plate 44 as a field stop are arranged close to the reticle R. More specifically, these movable blinds 42,
The slit plate 44 is actually arranged inside the reticle stage base 32 as shown in FIG.

The slit plate 44 has an arc-shaped illumination area IA.
The slit plate 44 may be fixed to the projection optical system PO. However, in the present embodiment, the slit plate 44 is configured to be drivable by a driving mechanism 46 as a switching mechanism including a motor and the like. Have been. FIG. 7 is a plan view of the slit plate 44 and the driving mechanism 46 thereof. The slit plate 44 includes a first slit 44a as a first opening that defines an arc-shaped illumination area (first illumination area) IA on the reticle R to which the EUV light EL as exposure illumination light is irradiated, and a reticle. R pattern area PA
Marks RM1 and RM4 formed on both sides of
(Or RM2 and RM5, and RM3 and RM6) have a second slit 44b as a second opening that defines a second illumination area where the exposure illumination light EL is irradiated. The drive mechanism 46 includes a motor 46A, a feed screw 46C connected to an output shaft of the motor via a joint 46B, and a control unit 46D for the motor 46A. A feed screw 46C is screwed into a nut portion (not shown) projecting from the slit plate 44 on the back side of the paper surface in FIG. For this reason,
The rotation of the motor 46A drives the feed screw 46C to rotate, whereby the axial direction (Y direction) of the feed screw 46C is changed.
The slit plate 44 is driven. The control unit 46D of the drive mechanism 46 includes a main controller 80 described later.
In accordance with the instruction from FIG. 10 (see FIG. 10), at the time of exposure, the slit illumination plate EL is used to expose the slit plate 44 to the first slit 44a.
When the reticle R is aligned (aligned), the slit plate 44 is switched to the second position where the exposure illumination light EL is applied to the second slit 44b. Instead of the feed screw mechanism, for example, a linear motor is used to
4 may be driven.

Returning to FIG. 4, the movable blind 42
Is to prevent the redundant circuit pattern drawn in the same reticle R from being included in the illumination area IA when it is not desired to transfer the redundant circuit pattern to the wafer W. In response to an instruction from the main control device 80 (see FIG. 10),
6D controls the movement of the reticle stage RST in the Y direction in synchronization with the movement in the Y direction. In this case, the starting of the movable blind 42 may start scanning in the same manner as the reticle R after the reticle R starts scanning, or may start moving in accordance with the arrival of a target pattern to be hidden.

Referring back to FIG. 1, as the projection optical system PO, as described above, a reflection optical system consisting of only a reflection optical element (mirror) is used. Have been. Therefore, EUV including the pattern information reflected by the reticle R and drawn on the reticle R
The light EL is irradiated onto the wafer W after being reduced to a quarter by the projection optical system PO.

Here, the projection optical system PO will be described in more detail with reference to FIG. As shown in FIG.
The projection optical system PO includes the EUV light E reflected by the reticle R.
A total of four mirrors (reflection optical elements) of a first mirror M1, a second mirror M2, a third mirror M3, and a fourth mirror M4, which sequentially reflect L, and a lens barrel PP holding these mirrors M1 to M4. It is composed of The reflecting surfaces of the first mirror M1 and the fourth mirror M4 have an aspherical shape,
The reflection surface of the mirror M2 is flat, and the reflection surface of the third mirror M3 is spherical. Each reflecting surface achieves a processing accuracy of about 1/50 to 1/60 or less of the exposure wavelength with respect to the design value, and has an error of 0.2 to 0.3 nm or less in RMS value (standard deviation). The material of each mirror is low expansion glass or metal, and EUV is formed on the surface by a multilayer film in which two kinds of materials similar to the reticle R are alternately stacked.
A reflection layer for light is formed.

In this case, as shown in FIG. 8, a hole is formed in the fourth mirror M4 so that the light reflected by the first mirror M1 can reach the second mirror M2. Similarly, the first mirror M1 is provided with a hole so that the light reflected by the fourth mirror M4 can reach the wafer W. Of course,
Instead of making a hole, the outer shape of the mirror may have a cutout through which a light beam can pass.

Since the environment in which the projection optical system PO is placed is also a vacuum, there is no escape for heat due to the irradiation of the illumination light for exposure. Therefore, in the present embodiment, a cooling device that cools the lens barrel PP is provided while connecting the mirrors M1 to M4 and the lens barrel PP holding the mirrors M1 to M4 with a heat pipe HP. That is, the lens barrel PP has a double structure of an inner mirror holding portion 50 and a cooling jacket 52 as a cooling device mounted on an outer peripheral portion thereof. A helical pipe 58 is provided for flowing from the outlet tube 56 to the outlet tube 56 side. Here, cooling water is used as the cooling liquid. The cooling water flowing out of the cooling jacket 52 through the outflow tube 56 exchanges heat with the refrigerant in a refrigeration apparatus (not shown), and is cooled to a predetermined temperature. The cooling water is circulated in this manner.

For this reason, in the projection optical system PO of the present embodiment, even if heat energy is given to the mirrors M1, M2, M3 and M4 by irradiation of the exposure illumination light (EUV light) EL,
Heat exchange is performed between the lens barrel PP whose temperature has been adjusted to a constant temperature by the heat pipe HP, and the mirrors M1, M2, M
3. M4 is cooled to the constant temperature. In this case, in the present embodiment, as shown in FIG. 8, the mirrors M1, M2, M4, etc. are not only on the back side but also on the front side (reflection side) where the illumination light for exposure is not irradiated. Also, since the heat pipe HP is attached, the cooling of each mirror is performed more effectively than when only the back side is cooled. Needless to say, the heat pipe HP on the back surface side of the third mirror M3 and the front surface side of the first mirror M1 reaches the inner peripheral surface of the lens barrel PP in the depth direction of the drawing. In addition, the external appearance of the lens barrel PP has a quadrangular prism shape as shown in FIG.

Returning to FIG. 1, wafer stage WST
Are arranged on a wafer stage base 60 arranged along the XY plane, and are levitated and supported on the wafer stage base 60 by a magnetic levitation type two-dimensional linear actuator 62. The wafer stage WST is driven at a predetermined stroke in the X direction and the Y direction by the magnetic levitation type two-dimensional linear actuator 62,
It is also driven in a minute amount in the θ direction (the rotation direction around the Z axis). Also, this wafer stage WST
Z by the magnetic levitation type two-dimensional linear actuator 62
It is configured such that it can be driven by a very small amount in the direction and the tilt direction with respect to the XY plane.

A permanent magnet (not shown) is provided on the bottom surface of wafer stage WST. A floating type two-dimensional linear actuator 62 is formed, and the position and orientation of the wafer stage WST in the six-dimensional direction are controlled by controlling a current flowing through the coil by a main controller 80 described later. .

On the upper surface of wafer stage WST, a wafer holder (not shown) of the electrostatic chuck type is mounted, and wafer W is held by suction by the wafer holder. Further, the side surface of wafer stage WST on the other side in the Y direction in FIG. 1 is mirror-finished, and a reflection surface 74a for light in the visible region is formed. Although not shown in FIG. 1, as shown in FIG. 6, the side surface on one side in the X direction of the wafer stage WST is also mirror-finished,
A reflection surface 74b for light in the visible region is formed.
In the exposure apparatus 10, the reflection surfaces 74a, 7a
The position of the projection optical system PO with respect to the projection optical system PO is accurately measured by an interferometer system which irradiates the measurement beam 4b. This interferometer system will be described later.

At one end of the upper surface of wafer stage WST,
There is provided an aerial image measuring instrument FM for measuring the relative position relationship (so-called baseline measurement) of the position where the pattern drawn on the reticle R is projected onto the surface of the wafer W and the alignment optical system ALG. . This aerial image measuring instrument FM corresponds to a reference mark plate of a conventional DUV exposure apparatus.

FIGS. 9A and 9B show a plan view and a longitudinal sectional view of the aerial image measuring instrument FM, respectively. As shown in these figures, a slit SLT as an opening is formed on the upper surface of the aerial image measuring instrument FM. The slit SLT is patterned on the EUV light reflecting layer 64 formed on the surface of the fluorescent substance 63 having a predetermined thickness fixed on the upper surface of the wafer stage WST. Note that an EUV light absorption layer may be provided instead of the reflection layer 64, and an opening may be formed in this absorption layer.

An opening 66 is formed in the upper surface plate of the wafer stage WST below the slit SLT. Inside the wafer stage WST opposed to the opening 66, a photoelectric conversion element PM such as a photomultiplier is provided. Are located. Accordingly, when the aerial image measuring instrument FM is irradiated with the EUV light EL from above via the projection optical system PO, the EUV light transmitted through the slit SLT reaches the fluorescent substance 63, and the fluorescent substance 63 It emits light with a longer wavelength than. This light is received by the photoelectric conversion element PM and converted into an electric signal corresponding to the intensity of the light. The output signal of the photoelectric conversion element PM is also supplied to the main controller 80.

Next, referring to FIG. 6, reticle stage R
The configuration and the like of the interferometer system 70 (see FIG. 10) for measuring the positions of the ST and the wafer stage WST will be described in detail. In FIG. 6, the corresponding laser interferometer is typically shown using the length measurement axis of each laser interferometer.

The interferometer system 70 includes four laser interferometers RIFX1, RIFX2, RIFY1, and RIFY2 for measuring the position of the reticle stage RST in the XY plane.
And four laser interferometers WIFX1, WIFX2, WIY for measuring the position of the wafer stage WST in the XY plane
1 and WIFY2.

The interferometer RIFY1 has a reticle stage R
The measurement beam RIFY1M is projected onto the reflection surface 40a of the ST, and the reference beam R is applied to a fixed mirror (reference mirror) 72a (see FIG. 1) attached to the barrel PP of the projection optical system PO.
By projecting IFY1R and receiving each reflected light, the relative position of the reticle stage RST in the Y direction with respect to the fixed mirror 72a at the projection position of the measurement beam RIFY1M is measured.

Similarly, the interferometer RIFY2 applies the measurement beam RIFY2M to the reflection surface 40a of the reticle stage RST.
Is projected, a reference beam RIFY2R is projected onto a fixed mirror (reference mirror) 72a (see FIG. 1) attached to the barrel PP of the projection optical system PO, and the respective reflected light is received, thereby measuring the measurement beam. The relative position of the reticle stage RST in the Y direction with respect to the fixed mirror 72a at the projection position of RIFY2M is measured.

The above two interferometers RIFY1, RIFY2
The center of the irradiation position of the measurement beams RIFY1M and RIFY2M is aligned with the center of the illumination area IA (the center of the reticle R in the X direction). Therefore, the average of the measured values of these two interferometers is the Y direction position of reticle stage RST, and the difference between the two measured values divided by the interferometer axis interval is the rotation angle of reticle stage RST (here α1). )give. These interferometers RIFY1, RIFY
The measured value of 2 is supplied to the main controller 80, and the main controller 80 calculates the average value and the rotation angle α1.

The interferometer RIFX1 projects the measurement beam RIFX1M on the reflection surface 40b of the reticle stage RST, and also applies the reference beam RIFX to a fixed mirror (reference mirror) 72b attached to the barrel PP of the projection optical system PO.
By projecting 1R and receiving each reflected light, the relative position of the reticle stage RST in the X direction with respect to the fixed mirror 72b at the projection position of the measurement beam RIFX1M is measured.

Similarly, the interferometer RIFX2 uses the measurement beam RIFX2M on the reflection surface 40b of the reticle stage RST.
And a reference beam RIF is applied to a fixed mirror (reference mirror) 72b attached to the barrel PP of the projection optical system PO.
By projecting X2R and receiving each reflected light, the relative position of the reticle stage RST in the X direction with respect to the fixed mirror 72b at the projection position of the measurement beam RIFX2M is measured.

The above two interferometers RIFX1 and RIFX2
The center of the irradiation position of the measurement beams RIFX1M and RIFX2M is aligned with the center of the illumination area IA (see point P2 in FIG. 5). Accordingly, the average of the measured values of these two interferometers is the X-direction position of the reticle stage RST, and the difference between the two measured values divided by the interferometer axis interval is the rotation angle of the reticle stage RST (here α2). )give. The measurement values of these interferometers RIFX1 and RIFX2 are supplied to the main control device 80, and the main control device 8
At 0, the average value and the rotation angle α2 are calculated. In this case, main controller 80 calculates one of rotation angles α1 and α2 or an average value (α1 + α2) / 2 as the rotation angle of reticle stage RST in the θ direction.

The interferometer WIFY1 is connected to the wafer stage WS
By projecting the measurement beam WIFY1M on the reflection surface 74a of T and projecting the reference beam WIFY1R on a fixed mirror (reference mirror) 76a attached to the barrel PP of the projection optical system PO, and receiving each reflected light. The relative position in the Y direction of wafer stage WST with respect to fixed mirror 76a at the projection position of measurement beam WIFY1M is measured.

Similarly, interferometer WIFY2 projects measurement beam WIFY2M on reflection surface 74a of wafer stage WST, and also transmits reference beam WIFY to fixed mirror (reference mirror) 76a attached to barrel PP of projection optical system PO.
By projecting 2R and receiving each reflected light, the relative position in the Y direction of wafer stage WST with respect to fixed mirror 76a at the projection position of measurement beam WIFY2M is measured.

The above two interferometers WIFY1, WIFY2
The center of the irradiation position of the measurement beams WIFY1M and WIFY2M corresponds to the center of the arc-shaped exposure area SA (see FIG. 11) on the wafer corresponding to the illumination area IA. Therefore, the average value of the measured values of these two interferometers is the Y-direction position of wafer stage WST, and the difference between the two measured values divided by the interferometer axis interval is the rotation angle of wafer stage WST (here, β1). )give. The measured values of these interferometers WIFY1 and WIFY2 are supplied to the main controller 80, and the main controller 80 calculates the average value and the rotation angle β1.

The interferometer WIFX1 projects the measurement beam WIFX1M on the reflection surface 74b of the wafer stage WST, and also applies the reference beam WIFX1 to the fixed mirror (reference mirror) 76b attached to the barrel PP of the projection optical system PO.
By projecting R and receiving each reflected light,
Fixed mirror 76 at the projection position of the measurement beam WIFX1M
The relative position of wafer stage WST in the X direction with respect to b is measured.

Similarly, interferometer WIFX2 projects measurement beam WIFX2M on reflection surface 74b of wafer stage WST, and also transmits reference beam WIFX to fixed mirror (reference mirror) 76b attached to barrel PP of projection optical system PO.
By projecting 2R and receiving each reflected light, the relative position of wafer stage WST in the X direction with respect to fixed mirror 76b at the projection position of measurement beam WIFX2M is measured.

The above two interferometers WIFX1 and WIFX2
The center of the irradiation position of the measurement beams WIFX1M and WIFX2M corresponds to the center of the exposure area SA corresponding to the illumination area IA. Therefore, the average value of the measured values of these two interferometers is the X direction position of wafer stage WST, and the difference between the two measured values divided by the interferometer axis interval is the rotation angle of wafer stage WST (here, β2). )give. The measurement values of these interferometers WIFX1 and WIFX2 are supplied to the main controller 80, and the main controller 80
Then, the average value and the rotation angle β2 are calculated. In this case, main controller 80 calculates one of rotation angles β1 and β2 or an average value (β1 + β2) / 2 as the rotation angle of wafer stage WST in the θ direction.

Returning to FIG. 1, a measuring device for measuring the position of the reticle R in the Z direction (first axis direction) is provided on the lens barrel PP of the projection optical system PO, which is the reference for all the measurements of the eight interferometers. As a reticle surface measurement laser interferometer RIFZ. This laser interferometer RIFZ is actually
As shown in FIG. 6, laser interferometers RIFZ1, RI
Three of FZ2 and RIFZ3 are arranged at a predetermined interval and fixed to the lens barrel PP. In FIG. 1 (and FIG. 4), these are typically shown as a laser interferometer RIFZ.

These laser interferometers RIFZ1 to RIFZ
The measurement beam from Z3 is projected onto the pattern area of the reticle R at a predetermined incident angle θ via the turning mirror M at three different points in the irradiation area of the exposure illumination light EL, that is, the arc-shaped illumination area IA. The exposure illumination light EL is projected onto the pattern surface of the reticle R through an optical path in the Z direction at the center of the incident light path and the emission light path (reflection light path) of the exposure illumination light EL (see FIGS. 1 and 4). Therefore, the laser interferometer RIFZ
1, RIFZ2 and RIFZ3 are obliquely incident on the pattern surface of the reticle R at a predetermined incident angle θ and do not affect the exposure illumination light EL reflected at the same exit angle as the incident angle, and The interferometer measurement beam is not affected by the illumination light EL and has high accuracy (for example, several n
It is possible to measure the position of the reticle R in the Z direction with an accuracy of m to 1 nm or less.

Here, as the laser interferometers RIFZ1 to RIFZ3, those having a built-in reference mirror having a built-in reference mirror (not shown) in the main body are used, and the measurement on the reticle R is performed based on the position of the reference mirror. Z of beam irradiation position
The directional position is measured. In this case, the laser interferometer RI is located at the position of the point P1 in the illumination area IA shown in FIG.
The measurement beam from FZ1 is projected, the measurement beam from laser interferometer RIFZ2 is projected at the position of point P2, and the measurement beam from laser interferometer RIFZ3 is projected at the position of point P3. Point P2 is the illumination area I
The center of A, that is, the point on the central axis in the X direction of the pattern area PA and the center point in the Y direction of the illumination area, the points P1, P
3 is located symmetrically with respect to the central axis.

These three laser interferometers RIFZ1 to RIFZ-R
The measured value of IFZ3 is input to the main controller 80 (see FIG. 10), and the main controller 80 uses the magnetic levitation type two-dimensional linear actuator based on these three measured values as described later. The reticle stage RST, that is, the Z position and the tilt of the reticle R are corrected via 34.

On the other hand, the wafer W based on the lens barrel PP
Is measured by an obliquely incident light type focus sensor 14 fixed to the projection optical system PO. As shown in FIG. 1, the focus sensor 14 is fixed to a column (not shown) that holds the lens barrel PP, and is similar to the light transmitting system 14a that irradiates the detection beam FB obliquely to the wafer W surface. And a light receiving system 14b fixed to the illustrated column and receiving the detection beam FB reflected by the surface of the wafer W. As this focus sensor, for example, a multipoint focal position detection system disclosed in Japanese Patent Application Laid-Open No. 6-283403 or the like is used. It is important that the focus sensors 14 (14a, 14b) are fixed integrally with the lens barrel PP.

As is apparent from the above description, in this embodiment, the position of the reticle R in the XYZ three-dimensional directions is measured with reference to the lens barrel PP of the projection optical system PO.
Since the position in the XYZ three-dimensional direction of the wafer W is measured with reference to the barrel PP of the projection optical system PO, the projection optical system PO
Reticle stage RST and wafer stage WST
The persons need not be supported by the same support member, and each may be supported by a separate support member.
That is, there is no problem if there is no mechanical contact between the projection optical system PO, the reticle stage RST, and the wafer stage WST. Further, the interferometer system 7 described above is used.
Also, since the main body of each interferometer composing 0 performs measurement with reference to each fixed mirror attached to the barrel PP, the mechanical contact with the projection optical system PO, the reticle stage RST, and the wafer stage WST No need.

Further, in this embodiment, the projection optical system PO
As shown in FIG. 1, the alignment optical system ALG is fixed to the side surface of. The alignment optical system ALG irradiates the alignment mark (or the aerial image measuring instrument FM) on the wafer W with broadband light,
An image-forming alignment sensor that receives the reflected light and detects the mark by an image processing method, and an LIA (Laser Interferom) that irradiates a laser beam to the grating mark and detects diffracted light.
etric Alignment) type alignment sensor and AFM
Various types such as a scanning probe microscope such as (atomic force microscope) can be used.

FIG. 10 shows the above-described various parts.
The configuration of a control system related to position and orientation control of wafer W (wafer stage WST) and reticle R (reticle stage WST) is schematically shown in a block diagram.
A main control device 80 (comprising a microcomputer or a minicomputer) and the magnetic levitation linear actuators 34 and 62 in the control system shown in FIG. 10 constitute a stage control system. A drive device is constituted by wafer stage WST.

Next, the first book constructed as described above is used.
The operation of the exposure process by the exposure apparatus 10 according to the embodiment will be described.

First, the reticle R is transported by a reticle transport system (not shown), and is suction-held by the reticle holder RH of the reticle stage RST at the loading position. Next, based on a command from the main controller 80, the driving mechanism 46 switches the slit plate 44 to a position (second position) where the exposure illumination light EL can irradiate the second slit 44b. Next, the main controller 80 controls the magnetic levitation type 2
By controlling the positions of wafer stage WST and reticle stage RST via two-dimensional linear actuators 62 and 34, reticle alignment marks RM1, RM4, RM2, RM5, RM3, RM drawn on reticle R.
6 are sequentially irradiated with two exposure illumination lights EL,
Reticle alignment marks RM1, RM4, RM2
The projected image of the reticle pattern image on the wafer W surface is obtained by detecting the projected image of RM5, RM3, and RM6 on the wafer W surface by the aerial image measuring device FM. That is,
Perform reticle alignment.

Next, main controller 80 moves wafer stage WST via magnetic levitation type two-dimensional linear actuator 62 so that slit SLT of aerial image measuring instrument FM is located immediately below alignment optical system ALG. Based on the detection signal of the alignment optical system ALG and the measurement value of the interferometer system 70 at that time, the image forming position of the pattern image of the reticle R on the wafer W surface and the relative position of the alignment optical system ALG; That is, a baseline amount is obtained.

When the baseline measurement is completed, main controller 80 sets a predetermined wafer alignment mark among the wafer alignment marks attached to each shot area of wafer W on wafer stage WST as a sample target. Position detection is performed using alignment optical system ALG while sequentially moving wafer stage WST. In this manner, when the position detection of the wafer alignment mark of the sample shot is completed, the positions of all the shot areas on the wafer W are obtained by using the data and by using the statistical method using the least squares method. When the alignment measurement is completed in this manner, main controller 80 switches slit plate 44 via drive mechanism 46 to a position (first position) where first slit 44a is irradiated with illumination light EL for exposure.

Then, main controller 80 performs step-and-scan exposure using EUV light as exposure illumination light EL as follows. That is, while monitoring the position information from the interferometer system 70 in accordance with the position information of each shot region above the wafer W obtained above, the wafer stage WST is moved through the magnetic levitation type two-dimensional linear actuator 62 to the first shot. And the reticle stage RST is positioned at the scanning start position via the magnetic levitation type two-dimensional linear actuator 34, and scanning exposure of the first shot is performed.
In this scanning exposure, the main controller 80 controls the magnetic levitation type 2
The speeds of the reticle stage RST and the wafer stage WST are controlled via the two-dimensional linear actuators 34 and 62 so that the speed ratio between the reticle stage RST and the wafer stage WST exactly matches the projection magnification of the projection optical system PO. Exposure (transfer of a reticle pattern) is performed in a constant speed synchronous state. When the scanning exposure of the first shot is completed in this way, a stepping operation between shots for moving wafer stage WST to the scanning start position of the second shot is performed. Then, the scanning exposure of the second shot is performed in the same manner as described above. In this case, in order to improve the throughput by omitting the operation of returning the reticle stage RST, the directions of the scanning exposure of the first shot and the second shot are opposite, that is, the exposure of the first shot is one direction on the Y axis. When the exposure is performed from the side to the other side, the exposure of the second shot is performed from the other side to the one side. That is, alternate scanning is performed. In this manner, the stepping operation between shots and the scanning exposure operation for shots are repeated, and the pattern of the reticle R is transferred to all shot regions on the wafer W by the step-and-scan method. FIG. 11 shows how the reticle pattern is transferred to the plurality of shot areas S on the wafer W in this manner. In the case of FIG.
The number of shots contained in one row is appropriately set to an even number or an odd number so that a complete shot can be efficiently obtained from one wafer.

Here, during the above-mentioned scanning exposure and alignment, the distance between the surface of the wafer W and the projection optical system PO and the XY plane are determined by focus sensors (14a, 14b) integrally attached to the projection optical system PO. The inclination is measured, and the main controller 80 and the projection optical system P
Wafer stage WST is controlled such that the distance from O and the parallelism are always constant.

In main controller 80, reticle surface measuring laser interferometers RIFZ1, RIFZ2, RIFZ3 are provided.
The distance between the projection optical system PO and the pattern surface of the reticle R during exposure (during transfer of the reticle pattern) is always kept constant based on the predetermined adjustment position information measured by at least one of the above. Controlling the magnetic levitation type two-dimensional linear actuator 34 to project the projection optical system PO of the reticle R.
The reticle stage RST and the substrate stage WST are synchronously moved along the Y-axis direction (second axis direction) while adjusting the position in the optical axis direction (first axis direction, Z direction). In this case, main controller 80 performs reticle surface measurement laser interferometer RIFZ in each movement direction of reticle stage RST, for example, in the first shot and the second shot, during synchronous movement of reticle stage RST and wafer stage WST.
1, the Z of the reticle stage RST using the adjustment position information corresponding to the moving direction among the first adjustment position information and the second adjustment position information measured by at least one of RIFZ2 and RIFZ3. The direction position is adjusted.

Therefore, according to the present embodiment, the entire surface of the reticle R pattern is sequentially transferred onto the wafer W by the scanning exposure, and at this time, based on the adjustment position information, the direction of the optical axis of the projection optical system (the (One axis direction) is adjusted, so that the transfer image of the pattern on the wafer W due to the displacement of the reticle R in the optical axis direction has a magnification error even though the reticle side of the projection optical system PO is non-telecentric. It is possible to effectively suppress the occurrence of misalignment or misalignment, and as a result, it is possible to improve the overlay accuracy.
Further, when the reticle stage RST moves from one side to the other side along the Y-axis and when it moves from the other side to the one side, the positional displacement of the reticle R in the Z direction during the synchronous movement is a mechanical factor. Even if the reticle R is different due to (moving characteristics of the stage) or control characteristics, the Z position of the reticle R can be adjusted with high accuracy without being affected by the displacement. It is possible to more effectively suppress the occurrence of a magnification error or a position shift in a transfer image of the pattern on the wafer W.

Here, main controller 80 adjusts the position of reticle R during exposure in the Z direction by adjusting at least one of laser interferometers RIFZ1, RIFZ2, and RIFZ3 for measuring reticle surface in advance. Information (first
May be performed by feed-forward controlling the magnetic levitation type two-dimensional linear actuator 34 based on the position information for adjustment and the second position information for adjustment), or the laser interference for reticle surface measurement during actual scanning exposure. Total RI
Adjustment position information obtained by real-time measurement using at least one of FZ1, RIFZ2, and RIFZ3 (first
Of the magnetic levitation type two-dimensional linear actuator 34 based on the adjustment position information and the second adjustment position information). In the former case, during the synchronous movement between the reticle stage RST and the wafer stage WST, the adjustment is performed by feedforward control based on information measured in advance without measuring the Z displacement of the reticle R. During the adjustment, an adjustment error due to a control delay hardly occurs. In the latter case, it is necessary to devise a control system that does not cause a control delay as compared with the former case, but there is an advantage that the position of the reticle R in the Z direction can be adjusted with higher accuracy.

Also, a reticle surface measuring laser interferometer RI
The FZ1, RIFZ2, and RIFZ3 irradiate different positions in the arc-shaped illumination area IA of the reticle R with respective measurement beams, and the Z of the reticle R is irradiated at the irradiation position of each measurement beam.
Since the directional position is measured, by using all of these reticle surface measurement laser interferometers RIFZ1, RIFZ2, and RIFZ3, the pattern transfer area on the reticle R at every moment is determined based on the most accurate measurement data. It is possible to adjust not only the Z position but also the inclination, and as a result, it is possible to further improve the overlay accuracy.

As is apparent from the above description, in the present embodiment, the main controller 80, the magnetic levitation type two-dimensional linear actuator 34, the reticle surface measuring laser interferometer RI
A correction device that relatively moves the reticle R in the first direction with respect to the projection optical system PO in order to correct an image magnification error of the reticle pattern during the synchronous movement of the reticle R and the wafer W by the FZ and the reticle stage RST, , A correction device for compensating for a change in the image magnification of the reticle pattern caused by the movement of the reticle R. Also,
In this embodiment, the main controller 80, the magnetic levitation type two-dimensional linear actuator 34, the laser interferometer RIFZ for reticle surface measurement, and the reticle stage RST allow the object surface of the projection optical system to be moved during the synchronous movement of the reticle R and the wafer W. An adjustment device is configured to adjust at least one of a position of the reticle in a direction orthogonal to the reticle and a relative inclination of the reticle with respect to the object plane. Furthermore, in the present embodiment, a driving member that drives the reticle R in the Z direction on the object plane side of the projection optical system PO during the synchronous movement of the reticle R and the wafer W by the magnetic levitation type two-dimensional linear actuator 34 and the reticle stage RST. Is configured.

As described in detail above, according to the first embodiment, the illumination optical system (PRM, IM, 30, M,
44), the reticle R is irradiated with illumination light EL in the optical axis direction inclined with respect to the Z direction orthogonal to the reticle R, and this illumination light is reflected on the pattern surface of the reticle R, and the reflected light is projected onto the projection optical system PO. Thus, the pattern on the reticle R projected on the wafer W and illuminated with the illumination light is transferred to the wafer W. When transferring the reticle pattern, the driving devices (80, 34, 62, RST, WST) use a reticle R and a wafer W at a speed ratio corresponding to the magnification of the projection optical system PO.
And move synchronously. During this synchronous movement, the correction device (8
0, 34, RST, and RIFZ), the reticle R with respect to the projection optical system PO is used to correct the image magnification error of the pattern.
Are relatively moved in the Z direction. At this time, the correction device may move the reticle R in the Z direction based on the output of the reticle surface measurement laser interferometer RIFZ. Thus, in the exposure apparatus 10 of the present embodiment, the entire surface of the pattern of the reticle R is sequentially transferred onto the wafer W by the scanning exposure, and at this time, the projection optical system PO is used by the correction device to correct the image magnification error of the pattern. Relative to the reticle R in the Z direction, it is possible to effectively suppress the occurrence of a magnification error in the transfer image of the pattern on the wafer W due to the displacement of the reticle R in the optical axis direction, As a result, it is possible to improve the overlay accuracy.

According to the present embodiment, the illumination system (1
2, PRM, IM, 30, M, 44) irradiate the reticle R with EUV light having a wavelength of 5 to 15 nm as illumination light EL, and a plurality of reflection optical elements (M1) as projection optical system PO.
To M4), the reticle pattern is projected onto the projection optical system P using EUV light.
Since it is transferred to the wafer W via O, a very fine pattern, for example, a 100 nm L / S pattern can be transferred with high accuracy.

Further, according to the present embodiment, interferometer system 70 includes reticle stage RST and wafer stage WS
The relative position of the reticle R with respect to the projection optical system PO in the Z direction is measured by a laser interferometer RIFZ with respect to the projection optical system PO with respect to the projection optical system PO. Since the relative position in the direction is measured by the focus sensor 14, the reticle stage RST and the wafer stage WST
Even if the and the projection optical system PO are supported by separate support members, there is no problem. For this reason, reticle stage RS
T, wafer stage WST, and projection optical system PO need not be mechanically connected, so that reticle stage RS
T, the reaction force due to the acceleration / deceleration during the movement of the wafer stage WST and the vibration of the support member of each stage adversely affect the imaging characteristics of the projection optical system PO, or the reaction due to the acceleration / deceleration during the movement of one of the stages. The force does not adversely affect the behavior of the other stage via the support member.

Further, according to the present embodiment, the slit plate 44 in the illumination optical system has the first slit 44a for irradiating a part of the reticle pattern with the illumination light EL and the second slit 44a for irradiating the reticle alignment mark with the illumination light EL. 2 slits 44
b, and a driving mechanism 46 for switching the first slit 44a and the second slit 44b with respect to the illumination light EL is provided, so that the same slit plate 44 is suitable for exposure and alignment. It is possible to set an illumination area. Also, in this case, the degree of freedom of the cross-sectional shape of the illumination light irradiated from the illumination optical system toward the reticle R is increased as compared with the case where the slit plate 44 is not provided, and the optical element constituting the illumination optical system accordingly. The degree of freedom of design is improved.

In this embodiment, the exposure illumination light EL is used.
Is light in the soft X-ray region, and on the wafer stage WST,
A fluorescent substance 63, a slit SLT formed on the surface of the reflective layer 62 for the exposure illumination light EL by a thin film, and a fluorescent light when the exposure illumination light EL reaches the fluorescent substance 63 via the slit SLT. Aerial image measuring instrument F having a photoelectric conversion element PM for photoelectrically converting light emitted from the generating substance 63
Since there is no material that normally transmits light in the soft X-ray region because M is included, even when such light is used as illumination light for exposure, measurement of an aerial image can be performed using the illumination light for exposure. The projection position of the reticle pattern on wafer stage WST can be easily obtained using this aerial image measuring instrument FM.

In this embodiment, the pattern of the reticle R is formed by the EUV light (exposure illumination light) EL absorbing material formed on the reflection layer of the EUV light EL. Unlike the case of patterning a multilayer film made of a reflective material of light in the soft X-ray region, which is illumination light, the pattern can be repaired in the case of failure. In addition, by appropriately selecting the material of the absorbing substance, the reflecting layer of the exposure illumination light and the absorbing substance can be made to have substantially the same reflectance with respect to the measurement beam (for example, light in the visible region) of the interferometer RIFZ. And the Z-axis position of the reticle R can be measured with almost the same accuracy over the entire surface of the reticle R.

In the above-described embodiment, the case where the reference mirror integrated type is used as the reticle surface measurement laser interferometer RIFZ has been described as an example. However, the present invention is not limited to this. An interferometer as a measuring device for measuring a position may have a reference mirror fixed to the projection optical system and an interferometer main body arranged at a position distant from the projection optical system. In such a case, it is possible to avoid adversely affecting the optical characteristics of the projection optical system or various sensors fixed to the projection optical system, such as an alignment sensor and a focus sensor, due to the heat generated by the interferometer body. Also, in the above embodiment, the 3
Although the description has been given of the case where one measurement beam is applied to the illumination area IA on the reticle R, the present invention is not limited to this. For example, the interferometer RIFZ irradiates the measurement beam to different positions in the Y direction of the reticle R, and The position of the reticle R in the Z direction may be measured for each beam irradiation position. In such a case, at least in the Y direction (synchronous movement direction), it is possible to adjust the positional shift and the tilt shift of the reticle R in the optical axis direction during the synchronous movement between the reticle R and the wafer W. In this case, at least two measurement beams from the interferometer RIFZ are applied to the Y of the illumination area IA on the reticle.
In the case of irradiating the reticle R in both directions, so-called read-ahead control is performed during the synchronous movement of the reticle R and the wafer W, so that the Z position of the reticle R can be adjusted by feed forward. In such a case, the main controller 80, the magnetic levitation type two-dimensional linear actuator 34,
A reticle surface measuring laser interferometer RIFZ and a reticle stage RST constitute an adjusting device for adjusting at least one of a position of the reticle in a direction orthogonal to an object plane of the projection optical system and a relative inclination of the reticle with respect to the object plane. Is done.

In the above embodiment, the driving member for moving the reticle R in the Z direction (first direction) on the object plane side of the projection optical system PO during the synchronous movement is the reticle stage WST holding the reticle R and the reticle stage WST. Has been described with the magnetic levitation type two-dimensional linear actuator 34 for driving the reticle stage RST.
Another actuator such as a piezo element for driving the reticle holder RH holding the reticle R at a plurality of points in the Z direction may be provided on the upper side, and a driving member may be configured by this. In any case, it is desirable that the driving member is to tilt the reticle R relatively to the object plane of the projection optical system PO. In such a case, during the synchronous movement, in addition to the reticle R being moved in the Z direction on the object plane side of the projection optical system PO by the driving member, the inclination of the projection optical system PO with respect to the object plane can be adjusted. In spite of the fact that the object plane side of the projection optical system is non-telecentric, it is possible to effectively prevent a transfer error of the pattern on the wafer W from being caused by a magnification error or a displacement due to the displacement of the reticle R in the optical axis direction. As a result, the overlay accuracy can be improved.

In the above embodiment, the slit plate 44 is used.
The case where the arc-shaped illumination area IA is defined by using is described. However, the present invention is not limited to this. If each optical member constituting the illumination optical system is designed so that the illumination light EL has an arc shape. It is not always necessary to provide the slit plate 44 immediately below the reticle R.

The reticle alignment mark is RM
Instead of the positions of 1 to RM6, RM7 to RM12 in FIG.
Position. In such a case, the slit plate 44
As long as there is a slit plate having only the first slit 44a, the driving mechanism 46 is unnecessary. Alternatively, reticle alignment marks may be formed at all positions of RM1 to RM12, and all of them may be used.

<< Second Embodiment >> Next, a second embodiment of the present invention will be described with reference to FIGS.
Here, the same reference numerals are used for the same or equivalent components as those in the first embodiment, and the detailed description thereof will be omitted.

FIG. 12 shows an exposure apparatus 1 according to the second embodiment.
00 is schematically shown. Similarly to the above-described exposure apparatus 10, this exposure apparatus 100 also includes light (EU) in the soft X-ray region having a wavelength of 5 to 15 nm as exposure illumination light EL.
(V light) to perform an exposure operation by a step-and-scan method.

The exposure apparatus 100 differs from the above-described exposure apparatus 10 in that a projection optical system PO 'is provided instead of the above-described projection optical system PO, and is characterized in this point.

FIG. 13 shows the internal configuration of the projection optical system PO '. As shown in FIG. 13, the projection optical system PO ′ includes an odd number (here, five) of mirrors M5 to M9, and as a result, FIG.
As shown in the figure, both the reticle stage RST and the wafer stage WST are on the same side with respect to the projection optical system PO ′.

That is, in the second embodiment, the reticle stage RST and the wafer stage WST are placed on a stage base 60 ′ similar to the above-described wafer stage base 60 disposed substantially horizontally below the projection optical system PO. Are arranged together. Both of these stages RST, WS
T is a magnetic levitation type 2 on the stage base 60 '.
It is levitated and supported by the linear actuators 34 and 62, and is driven in six degrees of freedom in the same manner as in the first embodiment.

The magnetic levitation type two-dimensional linear actuator 34 is constituted by a permanent magnet (not shown) provided at the bottom of the reticle stage RST and a coil (not shown) extended on the stage base 60 ′ in the XY two-dimensional directions. ing. Similarly, a magnetic levitation type two-dimensional linear actuator 62 includes a permanent magnet (not shown) provided at the bottom of wafer stage WST and an XY2
It is constituted by a coil (not shown) stretched in the dimension direction. By controlling the current flowing through each of the coils by the main controller 80 described above, position and orientation control of the two stages in the six-dimensional direction and synchronous movement in the scanning direction are performed. That is, in the second embodiment, at the time of scanning exposure, the reticle stage RST and the wafer stage WST are oriented in opposite directions substantially along the scanning direction (Y-axis direction) at a speed ratio corresponding to the projection magnification of the projection optical system PO ′. The driving system is constituted by the magnetic levitation type two-dimensional linear actuators 34 and 62 and the main controller 80.

In this case, the ratio of the mass of wafer stage WST holding wafer W to reticle stage RST holding reticle R is set to be the same as the projection magnification of projection optical system PO ′.

The construction of other parts is the same as that of the exposure apparatus 10 of the first embodiment described above. Therefore, FIG.
Shows only a reticle surface measurement laser interferometer RIFZ, but other measurement systems, that is, a reticle XY
Needless to say, an interferometer, a wafer XY interferometer, a focus sensor, an alignment optical system, and the like are actually provided in the same manner as in the first embodiment.

Further, in FIG. 13, mirrors M5 to M
Although the cooling system of No. 9 is not provided, it may be provided similarly to the first embodiment.

In the exposure apparatus 100 of the second embodiment thus configured, the reticle R and the projection optical system P are also controlled by the laser interferometer RIFZ for reticle surface measurement.
The interval of O 'can be measured, and the same operation and effect as those of the first embodiment can be obtained.
Further, according to the exposure apparatus 100, at the time of scanning exposure,
When the driving system (34, 62, 80) drives the reticle stage RST and the wafer stage WST in opposite directions substantially along a predetermined direction at a speed ratio according to the projection magnification of the projection optical system PO ', the momentum conservation law Holds, the momentum of the system including the stage base 60 ′, the reticle stage RST and the wafer stage WST is preserved, and the center of gravity of the system does not move. Therefore, the reaction force acting on stage base 60 'by driving reticle stage RST and the reaction force acting on stage base 60' by driving wafer stage WST cancel each other, and the synchronization error between the two stages becomes almost zero.

As is clear from FIG. 13, reticle stage RST and wafer stage WST are arranged on the same plane, and drive systems (34, 62,
80), the same straight lines substantially along the scanning direction are driven in opposite directions, so that no moment acts on the stage base 60 '.

As described above, in exposure apparatus 100, reticle stage RST and wafer stage WS during scanning exposure
It is possible to effectively suppress the occurrence of a positional shift in the pattern transfer image on the wafer W due to a synchronization error with T, a vibration of the stage base 60 ′, and an eccentric load acting on the stage base. In addition, the overlay accuracy can be further improved, and the stage base 60 'may be supported by a passive vibration isolator that insulates minute vibrations from the floor surface, and an expensive active vibration isolator is not required.

In the second embodiment, the case where reticle stage RST and wafer stage WST are arranged on the same plane has been described, but the present invention is not limited to this. That is, reticle stage RS
T and wafer stage WST may be arranged on different surfaces of the same stage base at different height positions. In such a case, the stage base may be supported by any device that eliminates the influence of the rotational moment exerted on the stage base by the reaction force resulting from the drive of both stages, for example, an active vibration isolator. Thus, it is possible to prevent the stage base from being inclined due to the unbalanced load generated by the rotation moment.

In the second embodiment, the wafer W
Has been described, the ratio of the mass of the wafer stage WST holding the reticle R to the mass of the reticle stage RST holding the reticle R is set to be the same as the projection magnification of the projection optical system PO ′. May be. That is, by providing another base member for supporting the above-mentioned stage base 60 'by, for example, a magnetic levitation method, it is possible to cope with a case where the mass ratio between the wafer stage WST and the reticle stage WST is different from the projection magnification. . In this case, the stage base 60 'moves relative to the base member according to the magnitude and direction of the resultant force of the reaction force of the driving force of both stages, but this relative movement causes the reticle stage RST and the wafer to move. This is because the center of gravity of the entire system including the stage WST and the stage base can be maintained at a predetermined position. In this case, the stage base 60 'may be supported above the other base member by a magnetic levitation type two-dimensional linear actuator. In this way, when the stage base 60 'moves from the reference position by a predetermined amount or more, the magnetic levitation type two-dimensional linear actuator generates a driving force in the XY plane, thereby returning the stage base 60' to the reference position. be able to.

The projection optical system and the illumination optical system shown in the first and second embodiments are merely examples, and it goes without saying that the present invention is not limited to these.

In the above embodiment, the illumination light EL
Is not limited to EUV light having a wavelength of 13.4 nm,
1.5 nm EUV light may be used. In this wavelength region, a multilayer film in which molybdenum and beryllium are alternately laminated is formed on the surface of the optical element. In addition, 70n
To transfer an mL / S pattern or a 50 nm isolated pattern, a projection optical system having a numerical aperture of about 0.1 to 0.12 is used for EUV light having a wavelength of 13.4 nm, and a wavelength of 1
For 1.5 nm EUV light, a projection optical system having a numerical aperture of about 0.08 to 0.1 is used.

Further, in the light source device 12 of the above embodiment, a tape target such as a copper tape is used, but a gas jet target or a cryo target may be used instead.

[0159]

As described above, claims 1 to 23,
According to each of the inventions described in claims 29 to 35, it is possible to effectively suppress a magnification error or a displacement from occurring in a transferred image of a pattern on a substrate, and as a result, to improve the overlay accuracy. This has an unprecedented excellent effect that it can be achieved.

Further, according to the present invention, it is possible to effectively suppress the occurrence of a magnification error or a displacement in a transferred image of a pattern on a substrate due to a displacement of a mask in an optical axis direction. And an exposure method capable of improving the overlay accuracy.

[Brief description of the drawings]

FIG. 1 is a view schematically showing a configuration of an exposure apparatus according to a first embodiment.

FIG. 2 is a diagram showing a configuration of the inside of the light source device of FIG. 1;

FIG. 3 is a left side view of the light source device of FIG. 2;

FIG. 4 is a diagram showing in detail each component of the configuration near the reticle stage in FIG. 1;

FIG. 5 is a schematic plan view of a reticle.

FIG. 6 is a diagram illustrating a configuration of an interferometer system that measures the positions of a reticle stage and a wafer stage in an XY plane.

FIG. 7 is a plan view showing an example of the slit plate of FIG. 1 and a driving mechanism thereof.

8 is a diagram schematically showing an internal configuration of the projection optical system of FIG.

9A is a plan view showing the aerial image measuring device, and FIG. 9B is a side view showing the aerial image measuring device of FIG.

FIG. 10 is a block diagram schematically showing a configuration of a control system related to position and orientation control of a wafer (wafer stage) and a reticle (reticle stage).

FIG. 11 is a diagram showing a state in which a reticle pattern is transferred to a plurality of shot areas on a wafer.

FIG. 12 is a view schematically showing an overall configuration of an exposure apparatus according to a second embodiment.

FIG. 13 is a diagram showing an internal configuration of the projection optical system of FIG.

FIG. 14 is a diagram for explaining a problem to be solved by the invention.

[Explanation of symbols]

10 exposure apparatus, 12 light source device (part of illumination system), 3
0: wavelength selection window (part of illumination optical system, part of illumination system),
34: magnetic levitation type two-dimensional linear actuator (part of stage control system, part of drive unit, part of correction unit, part of drive member, part of adjustment unit), 44 ... slit plate (field stop, A part of the illumination optical system), 44a: first slit (first opening), 44b: second slit (second opening),
46: drive mechanism (switching mechanism), 62: magnetic levitation type two-dimensional linear actuator (part of stage control system, part of drive device), 63: fluorescent substance, 70: interferometer system, 80: main controller (Part of stage control system, part of drive unit, part of correction unit, part of adjustment unit), R: reticle (mask), PO: projection optical system, W: wafer (substrate), RST: reticle Stage (mask stage, part of driving device, part of driving member, part of adjusting device), W
ST: Wafer stage (substrate stage, part of drive unit), PM: parabolic mirror (part of illumination optical system, part of illumination system), M: folding mirror (part of illumination optical system, illumination system) IA) arc-shaped illumination area (first illumination area), R
IFZ: laser interferometer for reticle surface measurement (measuring device, interferometer, part of correction device, part of adjustment device), FM: aerial image measuring device, SLT: slit (opening), EL: illumination light for exposure, PM: photoelectric conversion element.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁶ Identification code FI H01L 21/30 516A 518 531A

Claims (35)

[Claims] 1. An exposure apparatus for transferring a pattern formed on a mask onto a substrate via a projection optical system, wherein the mask is a reflective mask, the projection optical system is a reflective optical system, A mask stage for holding a mask; a substrate stage for holding the substrate; an illumination system for irradiating illumination light for exposure at a predetermined incident angle with respect to a pattern surface of the mask; and an illumination system illuminated by the illumination light for exposure. To transfer the pattern of the mask onto the substrate via the projection optical system,
While adjusting the position of the mask in the first axis direction, which is the optical axis direction of the projection optical system, based on the predetermined adjustment position information, the mask stage and the substrate stage are perpendicular to the first axis direction. An exposure apparatus comprising: a stage control system that performs synchronous movement along two axial directions. 2. The stage control system, wherein the adjustment position information includes first adjustment position information and second adjustment position information according to a moving direction of the mask stage on the second axis. The one corresponding to the movement direction of the first adjustment position information and the second adjustment position information for each movement direction of the mask stage during the synchronous movement of the mask stage and the substrate stage. The exposure apparatus according to claim 1, wherein the position of the mask in the first axial direction is adjusted using the adjustment position information. 3. The exposure apparatus according to claim 1, wherein the adjustment position information is information measured in advance. 4. A measuring device for measuring a position of the mask in the first axis direction, wherein the stage control system uses the measuring device during the synchronous movement of the mask stage and the substrate stage. 3. The exposure apparatus according to claim 1, wherein the position information for adjustment is measured, and the position of the mask in the first axial direction is adjusted using the position information for adjustment. 4. 5. The interferometer for measuring a position of the mask in the first axis direction by irradiating the mask with a length measuring beam vertically and receiving reflected light thereof. The exposure apparatus according to claim 4, wherein: 6. The interferometer irradiates at least two measurement beams on an irradiation area of the mask with the exposure illumination light, and applies an irradiation position of the mask in a first axial direction for each irradiation position of each measurement beam. The exposure apparatus according to claim 5, wherein the position is measured. 7. The interferometer irradiates different positions of the mask in the second axis direction with a measurement beam, and measures the position of the mask in the first axis direction for each irradiation position of each measurement beam. The exposure apparatus according to claim 5, wherein: 8. The interferometer according to claim 5, wherein the interferometer includes a reference mirror fixed to the projection optical system, and an interferometer body disposed at a position distant from the projection optical system.
8. The exposure apparatus according to claim 7. 9. The exposure according to claim 4, wherein the stage control system adjusts the position of the mask in the first axis direction by feedforward control using the measured adjustment position information. apparatus. 10. The exposure apparatus according to claim 4, wherein the stage control system adjusts the position of the mask in the first axis direction by feedback control using the measured position information for adjustment. . 11. A first slit which is arranged close to a pattern surface of the mask and defines a first illumination area on the mask to be irradiated with the exposure illumination light, and a mark portion formed on the mask. A slit plate having a second slit defining a second illumination area to which the exposure illumination light is applied; and a first position at which the exposure illumination light is applied to the first slit. The exposure apparatus according to any one of claims 1 to 10, further comprising: a switching mechanism configured to switch between a second position where the exposure illumination light is applied to the second slit. 12. A surface including the second axis orthogonal to the first axis of the mask stage and the substrate stage, wherein the mask stage, the substrate stage, and the projection optical system are supported by separate support members. Further comprising an interferometer system for measuring a position in the mask, wherein the interferometer system includes a second axis orthogonal to the first axis of the mask stage and the substrate stage with respect to a member supporting the projection optical system. The exposure apparatus according to any one of claims 1 to 10, wherein a relative position is measured. 13. The exposure illumination light is light in a soft X-ray region, and is formed on the substrate stage by a fluorescent substance and a thin film of a reflection layer or an absorption layer of the exposure illumination light on the surface thereof. And an aerial image measuring device having a photoelectric conversion element for photoelectrically converting light emitted from the fluorescent substance when the exposure illumination light reaches the fluorescent substance via the opening. The exposure apparatus according to claim 1. 14. The illumination light for exposure is light in a soft X-ray region, and the pattern of the mask is formed by an absorption material of the illumination light for exposure formed on a reflective layer of the illumination light for exposure. The exposure apparatus according to claim 1, wherein the exposure is performed. 15. An exposure apparatus for transferring a pattern of a mask onto a substrate, comprising: an illumination optical system having an optical axis inclined with respect to a first direction orthogonal to the mask, and irradiating the mask with illumination light. A projection optical system for projecting the illumination light reflected by the mask onto the substrate; a driving device for synchronously moving the mask and the substrate at a speed ratio according to a magnification of the projection optical system; An exposure apparatus, comprising: a correction device that moves the mask relative to the projection optical system in the first direction in order to correct an image magnification error of the pattern during movement. 16. The illumination system irradiates the mask with EUV light having a wavelength of 5 to 15 nm as the illumination light, and the projection optical system includes only a plurality of reflection optical elements. Item 16. An exposure apparatus according to Item 15. 17. The apparatus according to claim 15, wherein the correction device has a measurement device that measures a position of the mask in the first direction, and moves the mask based on an output of the measurement device. 17. The exposure apparatus according to item 16. 18. An exposure apparatus for transferring a pattern of a mask onto a substrate, comprising: an illumination optical system for irradiating the mask with illumination light whose principal ray is inclined with respect to a first direction orthogonal to the mask; A projection optical system for projecting illumination light emitted from the substrate onto the substrate; a driving device for synchronously moving the mask and the substrate at a speed ratio corresponding to a magnification of the projection optical system; generated by movement of the mask An exposure apparatus comprising: a correction device that compensates for a change in the image magnification of the pattern. 19. The illumination optical system according to claim 19, wherein the mask is a reflective mask, and the illumination optical system has a wavelength of 5 to 15 nm as the illumination light.
20. The exposure apparatus according to claim 18, wherein the mask is irradiated with EUV light during the period, and the projection optical system includes only a plurality of reflection optical elements. 20. The apparatus according to claim 18, wherein the correction device includes a driving member that moves the mask in the first direction on the object plane side of the projection optical system during the synchronous movement. Exposure equipment. 21. The exposure apparatus according to claim 20, wherein the driving member tilts the mask relatively to an object plane of the projection optical system. 22. An exposure apparatus for transferring a pattern of a mask onto a substrate, comprising: an illumination optical system for irradiating the mask with illumination light inclined with respect to a normal to the mask; and illumination reflected by the mask. A projection optical system for projecting light onto the substrate, wherein the illumination optical system is arranged close to the mask on the incident side of the illumination light, and an irradiation area of the illumination light on the mask An exposure apparatus comprising: a field stop for defining at least one of a shape, a size, and a position of the illumination area by the field stop. 23. The field stop has a first opening for irradiating a part of the pattern with the illumination light, and a second opening for irradiating a mark formed on the mask with the illumination light, 23. The exposure apparatus according to claim 22, further comprising a switching mechanism for switching between the first opening and the second opening. 24. An exposure method for transferring a pattern formed on the mask onto the substrate via a projection optical system while synchronously moving the mask and the substrate, wherein a reflective mask is prepared as the mask, Using a reflective optical system as an optical system, the pattern surface of the mask is irradiated with illumination light for exposure at a predetermined incident angle θ, and the pattern of the mask illuminated by the illumination light for exposure is projected through the projection optical system. When transferring onto the substrate via the above, while adjusting the position of the mask in the first axial direction which is the optical axis direction of the projection optical system based on predetermined adjustment position information, the mask and the substrate An exposure method, comprising: synchronously moving along a second axis direction orthogonal to the first axis direction. 25. The position information for adjustment includes first position information for adjustment and second position information for adjustment according to a moving direction of the mask on the second axis, and the mask, the substrate, At the time of the synchronous movement, the mask is adjusted by using, for each moving direction of the mask, one of the first adjustment position information and the second adjustment position information corresponding to the movement direction. 25. The exposure method according to claim 24, wherein the position in the first axis direction is adjusted. 26. The exposure method according to claim 24, wherein the adjustment position information is information measured in advance. 27. The method according to claim 27, wherein the position information for adjustment is measured during the synchronous movement of the mask and the substrate, and the position of the mask in the first axial direction is adjusted using the position information for adjustment. The exposure method according to claim 24 or 25, wherein 28. An exposure method for transferring a pattern of a mask onto a substrate via a projection optical system, comprising: irradiating the mask with illumination light whose principal ray is inclined with respect to a direction orthogonal to the mask; In synchronization with the relative movement of the mask with respect to the substrate, relative to the illumination light reflected by the mask and passing through the projection optical system, the substrate is relatively moved, and the mask and the substrate are synchronously moved. An exposure method for compensating a change in image magnification of the pattern caused by movement of the mask. 29. An exposure apparatus for transferring a pattern of a mask onto a substrate, comprising: an illumination optical system for irradiating the pattern surface of the mask with inclined illumination light; and an illumination optical system for emitting illumination light emitted from the mask. A projection optical system for projecting onto the substrate;
A driving device that synchronously moves the mask and the substrate at a speed ratio according to a magnification of the projection optical system;
An exposure apparatus comprising: an adjusting device that adjusts at least one of a position of the mask in a direction orthogonal to an object plane of the projection optical system and a relative inclination of the mask with respect to the object plane. 30. An exposure apparatus for transferring a pattern formed on a reflective mask onto a substrate, comprising: a projection optical system having an odd number of reflective surfaces between the reflective mask and the substrate; A mask stage for holding a mold mask; a substrate stage for holding the substrate on the same side of the projection optical system as the reflective mask; and a mask stage and the substrate stage for scanning and exposing the substrate. An exposure apparatus including a drive system that is driven substantially along a direction. 31. The mask stage and the substrate stage are arranged on the same surface, and the drive system is configured to move the mask stage and the substrate stage substantially in the same straight line along a predetermined direction during scanning exposure of the substrate. 31. The exposure apparatus according to claim 30, wherein the driving is performed in a reverse direction. 32. An illumination optical system for irradiating the reflective mask with illumination light while tilting a principal ray thereof, wherein the driving system moves the reflective mask and the substrate relative to the illumination light, respectively. The exposure apparatus according to claim 30, wherein the exposure apparatus is driven. 33. The exposure apparatus according to claim 32, further comprising an aperture member that defines an irradiation area of the illumination light on the reflective mask in a shape of a circular slit. 34. The illumination light has a wavelength of 5 to 15 nm.
34. The exposure apparatus according to claim 32, wherein the projection optical system includes only a plurality of reflection optical elements. 35. An exposure apparatus for transferring a pattern formed on a reflection type mask onto a substrate via a projection optical system, wherein the reflection type mask and the reflection type mask are formed at a speed ratio according to a magnification of the projection optical system. A stage system for synchronously moving the substrate; and a holding member provided on the stage system for holding the reflective mask, wherein the holding member is made of a material having substantially the same linear expansion coefficient as a substrate material of the reflective mask. An exposure apparatus comprising: