JPH11204483A - Cleaning device and cleaning - Google Patents

Cleaning device and cleaning

Info

Publication number
JPH11204483A
JPH11204483A JP10284806A JP28480698A JPH11204483A JP H11204483 A JPH11204483 A JP H11204483A JP 10284806 A JP10284806 A JP 10284806A JP 28480698 A JP28480698 A JP 28480698A JP H11204483 A JPH11204483 A JP H11204483A
Authority
JP
Japan
Prior art keywords
cleaning
cleaned
contact pressure
target
cleaning body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10284806A
Other languages
Japanese (ja)
Other versions
JP3292367B2 (en
Inventor
Akira Yonemizu
昭 米水
Nobukazu Ishizaka
信和 石坂
Tomoko Hamada
知子 濱田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP28480698A priority Critical patent/JP3292367B2/en
Publication of JPH11204483A publication Critical patent/JPH11204483A/en
Application granted granted Critical
Publication of JP3292367B2 publication Critical patent/JP3292367B2/en
Anticipated expiration legal-status Critical
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Links

Abstract

PROBLEM TO BE SOLVED: To provide a cleaning device of a structure, wherein the contact pressure of a cleaning body to the surface of a material to be cleaned, is easily set to as to prevent giving scratches on the surface of the material to be cleaned and at the same time, even of a deviation, nonunieformity is density or the like is generated in the cleaning body, the cleaning body copes with it to clean the surface of the material to be cleaned with its good follow-up power as it maintains the prescribed contact pressure. SOLUTION: A material W to be cleaned is held in such a way that the surface of an object of cleaning of the material W is made to face to a cleaning body 51, the cleaning body 51 is rotatably supported by an arm member 21, which can be freely whirled and elevated, and the body 51 is supported by the arm member 21 in a vertically movable state. The material W and the cleaning body 51 are relatively moved in a state that the cleaning body 51 is brought into contact with the surface of the object of cleaning of the material W at a prescribed contact pressure to clean the surface o the object of cleaning of the material W.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は,洗浄装置及び洗浄
方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning apparatus and a cleaning method.

【0002】[0002]

【従来の技術】例えば半導体デバイスの製造プロセスを
例にとって説明すると,LSI等の半導体デバイスがそ
の表面に形成される半導体ウエハ表面は,プロセス中
は,極めて厳格な清浄度を維持する必要がある。そのた
め各種の製造,処理プロセスの前後には,必要に応じて
その都度半導体ウエハの表面を洗浄することがあり,例
えばフォトリソグラフィ工程では,かかる洗浄が不可欠
となっている。
2. Description of the Related Art For example, taking a semiconductor device manufacturing process as an example, the surface of a semiconductor wafer on which semiconductor devices such as LSIs are formed must maintain extremely strict cleanliness during the process. Therefore, before and after various manufacturing and processing processes, the surface of the semiconductor wafer may be cleaned as needed, and such cleaning is indispensable in, for example, a photolithography process.

【0003】このような洗浄を行う従来の技術として
は,例えば,特開昭57−102024号や特開昭62
−259447号公報等において開示されている,いわ
ゆるスクラブ洗浄方式が一般的である。このスクラブ洗
浄方式においては,回転するブラシやスポンジを半導体
ウエハの洗浄対象面に接触させ,表面に付着した異物を
こすり洗いするようになっている。
As a conventional technique for performing such cleaning, for example, Japanese Patent Application Laid-Open No.
A so-called scrub cleaning method disclosed in, for example, Japanese Unexamined Patent Publication (Kokai) No. 259,947 is commonly used. In this scrub cleaning method, a rotating brush or sponge is brought into contact with the surface to be cleaned of the semiconductor wafer to scrub foreign substances adhering to the surface.

【0004】そして前記従来の技術においては,そのよ
うなブラシ等の洗浄体を半導体ウエハなどの被洗浄処理
体表面に接触させるにあたり,レコード針の針圧調整等
に用いられている機構と同様の機構を採用している。即
ち,ブラシ等の洗浄体を支持するアームの一端にバラン
スウエイトを配置し,このバランスウエイトの重量を支
持アーム側の総重量よりも軽めに設定し,その重量差に
よって接触圧を得るようにていたのである。
In the prior art, when a cleaning body such as a brush is brought into contact with the surface of a processing target such as a semiconductor wafer, a mechanism similar to a mechanism used for adjusting the stylus pressure of a record needle or the like is used. The mechanism is adopted. That is, a balance weight is arranged at one end of an arm supporting a cleaning body such as a brush, and the weight of the balance weight is set to be lighter than the total weight of the support arm side, so that a contact pressure is obtained by the weight difference. It was.

【0005】[0005]

【発明が解決しようとする課題】ところで半導体ウエハ
表面にそのようなブラシ等を接触させて洗浄する場合,
その接触圧の値が極めて重要である。なぜなら接触圧が
過大にすぎると,半導体ウエハ表面に傷をつけてしま
い,即歩留まりの低下を招くからである。従って,ブラ
シ等の洗浄体を半導体ウエハ表面に接触させるにあたっ
ては,その接触圧をどの程度に設定するかが問題であ
る。
In the case of cleaning by bringing such a brush or the like into contact with the surface of a semiconductor wafer,
The value of the contact pressure is extremely important. This is because if the contact pressure is too high, the surface of the semiconductor wafer will be damaged, which will immediately lower the yield. Therefore, when bringing a cleaning body such as a brush into contact with the surface of a semiconductor wafer, there is a problem of how to set the contact pressure.

【0006】この点,支持アームに設けたバランスウエ
イトによって接触圧調整を行う前記従来技術は,接触圧
の調整が極めて困難であった。また洗浄回数を重ねてい
くと,ブラシやスポンジはその弾性復元性が減退し,偏
りや「くせ」,粗密が生じ,当初設定の接触圧が維持で
きなくなり,洗浄不十分や洗浄不均一の原因となる。従
ってその場合には,適宜接触圧を調整する必要がある
が,この点前記従来技術にでは支持アームに設けたバラ
ンスウエイトによって接触圧調整を行うため,その都度
バランスウエイトからの支点距離を調節する必要があ
り,極めて困難な作業を強いられていた。
[0006] In this regard, in the above prior art in which the contact pressure is adjusted by the balance weight provided on the support arm, it is extremely difficult to adjust the contact pressure. As the number of washings increases, the elasticity of brushes and sponges deteriorates, causing unevenness, "habiting", and unevenness, making it impossible to maintain the initially set contact pressure. Becomes Therefore, in that case, it is necessary to adjust the contact pressure as appropriate. However, in this regard, in the prior art, since the contact pressure is adjusted by the balance weight provided on the support arm, the fulcrum distance from the balance weight is adjusted each time. And required extremely difficult work.

【0007】本発明はかかる点に鑑みてなされたもので
あり,その目的とするところは,被洗浄処理体の表面に
傷つけないように接触圧を容易に設定するとともに,前
記した洗浄体に偏りや粗密等が発生してもそれに対処し
て,前記所定の接触圧を維持した追従性のよい洗浄装置
及び洗浄方法を提供することにある。
SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object of the present invention is to easily set a contact pressure so as not to damage the surface of an object to be cleaned and to bias the above-mentioned cleaning body. It is an object of the present invention to provide a cleaning device and a cleaning method which can cope with the occurrence of unevenness or density and maintain the predetermined contact pressure with good followability.

【0008】[0008]

【課題を解決するための手段】そこで前記目的達成のた
め,請求項1によれば,洗浄体と,被洗浄処理体の洗浄
対象面を前記洗浄体と対面させるようにして前記被洗浄
処理体を保持する保持部材と,前記洗浄体を回転可能に
支持する洗浄体支持手段と,前記洗浄体支持手段が取り
付けられたアーム部材と,前記アーム部材を旋回させる
アーム旋回手段と,前記アーム部材を昇降させるアーム
昇降手段と,前記洗浄体支持手段を昇降させる洗浄体昇
降手段と,を具備し,前記洗浄体を前記洗浄対象面に所
定の接触圧で接触させた状態で前記被洗浄処理体及び前
記洗浄体を相対的に移動させて前記被洗浄処理体の前記
洗浄対象面を洗浄する,洗浄装置が提供される。
In order to achieve the above object, according to the present invention, the cleaning object and the object to be cleaned are arranged so that the surface to be cleaned of the object to be cleaned faces the cleaning object. A holding member for holding the cleaning member, a cleaning member supporting means for rotatably supporting the cleaning member, an arm member to which the cleaning member supporting means is attached, an arm turning means for turning the arm member, and the arm member. An arm elevating means for elevating and lowering the washing body supporting means for elevating the washing body support means, wherein the object to be cleaned is contacted with the washing body at a predetermined contact pressure with the surface to be washed; A cleaning apparatus is provided for relatively moving the cleaning body to clean the surface to be cleaned of the cleaning target body.

【0009】本発明でいうところの洗浄体とは,ブラシ
やスポンジ等,適当な弾性をもって洗浄対象面に接触さ
せて,その表面に付着している異物を除去するための手
段をいう。発明者らの検証によれば,洗浄体と被洗浄処
理体の洗浄対象面との接触圧が,60gf以下,とりわ
け50gf以下にすると,半導体ウエハなどの被洗浄処
理体に対して洗浄体が傷つけないことが確認されてい
る。従って,例えば被洗浄処理体として半導体ウエハを
例にとった場合,デバイス形成面側の洗浄を行うような
場合の接触圧は,50にgf以下,例えば30gf近辺
となるように設定すれば,さらに好ましい結果が得られ
る。また,洗浄体に偏り,「くせ」,粗密があっても,
接触圧を所定の値に維持することにより,追従性が良好
となる。ところで,例えば被洗浄処理体として半導体ウ
エハを例にとった場合,デバイス形成面でない裏面側に
ついては,相対的に高い接触圧で洗浄しても支障はな
い。即ち被洗浄処理体の表裏面に,要求される洗浄度合
いや,傷の許容度等に差がある場合,かならずしも前記
した場合と同一接触圧にて洗浄する必要はない。例えば
半導体ウエハの裏面,即ちデバイス非形成面を洗浄対象
とする場合などには,洗浄体との接触圧を200gf〜
1kgfに設定して良い。この場合,より好ましくは,
200gf〜400gf,とりわけ300gf近辺の接
触圧の範囲で洗浄するとよい。
The term "cleaning body" as used in the present invention refers to a means such as a brush or a sponge for removing foreign substances adhering to the surface to be cleaned by bringing the surface into contact with the surface to be cleaned with appropriate elasticity. According to the verification by the inventors, when the contact pressure between the cleaning object and the surface to be cleaned of the object to be cleaned is 60 gf or less, particularly 50 gf or less, the cleaning object damages the object to be cleaned such as a semiconductor wafer. Has not been confirmed. Therefore, for example, when a semiconductor wafer is taken as an example of the object to be cleaned, the contact pressure when cleaning the device forming surface side is set to 50 or less, for example, around 30 gf. Good results are obtained. In addition, even if the washing body is uneven,
By maintaining the contact pressure at a predetermined value, the followability is improved. By the way, for example, when a semiconductor wafer is taken as the object to be cleaned, there is no problem even if the back side other than the device forming surface is cleaned with a relatively high contact pressure. That is, when there is a difference in the required degree of cleaning, the tolerance of scratches, and the like on the front and back surfaces of the object to be cleaned, it is not always necessary to perform cleaning with the same contact pressure as in the above case. For example, when the back surface of the semiconductor wafer, that is, the non-device-formed surface is to be cleaned, the contact pressure with the cleaning body is set to 200 gf or more.
It may be set to 1 kgf. In this case, more preferably,
The cleaning may be performed in a contact pressure range of 200 gf to 400 gf, especially around 300 gf.

【0010】この請求項1の洗浄装置において,請求項
2に記載したように,前記洗浄対象面に対する前記洗浄
体の接触圧を検知する手段をさらに具備していても良
い。このように接触圧を検知することによって,接触圧
を,50gf以下の値,例えば30gf前後に設定,維
持しておくことができるようになる。
In the cleaning apparatus of the first aspect, as described in the second aspect, a means for detecting a contact pressure of the cleaning body with respect to the surface to be cleaned may be further provided. By detecting the contact pressure in this manner, the contact pressure can be set and maintained at a value of 50 gf or less, for example, about 30 gf.

【0011】また請求項3に記載したように,前記洗浄
体の位置を検出する手段をさらに具備していても良い。
洗浄体の位置を検出して,洗浄体の昇降範囲を例えば5
mm以下とすれば,洗浄体に回転ブラシ,回転スポンジを
用いて,プーリー,ベルトを介した回転駆動を与える場
合,良好な回転を実現することができる。また請求項4
に記載したように,前記洗浄対象面への塵埃の付着を防
止する手段を有していても良い。
Further, as described in claim 3, the apparatus may further comprise means for detecting the position of the cleaning body.
The position of the cleaning body is detected, and the vertical range of the cleaning body
When the diameter is set to be equal to or less than mm, good rotation can be realized when a rotary brush and a rotary sponge are used for the cleaning body and a rotary drive is applied through a pulley and a belt. Claim 4
As described in the above, a means for preventing dust from adhering to the surface to be cleaned may be provided.

【0012】請求項5に記載したように,前記洗浄体昇
降手段は,例えば流体によりピストンを移動させるシリ
ンダである。このシリンダ構造のフリクションロスが略
1gf以下のものを使用すれば,洗浄体と被洗浄処理体
の洗浄対象面との接触圧を微調整するあたり正確な調整
を実現することが可能になる。
[0012] As described in claim 5, the washing body lifting / lowering means is, for example, a cylinder for moving a piston by a fluid. If the cylinder structure having a friction loss of about 1 gf or less is used, accurate adjustment can be realized when finely adjusting the contact pressure between the cleaning object and the surface to be cleaned of the object to be cleaned.

【0013】また請求項6に記載したように,前記所定
の接触圧を維持するための手段をさらに具備していても
良い。例えば被洗浄処理体として半導体ウエハを例にと
った場合,デバイス形成面側の洗浄を行うような場合の
接触圧は,50にgf以下,例えば30gf近辺となる
ように設定すれば,さらに好ましい結果が得られる。ま
た例えば半導体ウエハの裏面,即ちデバイス非形成面を
洗浄対象とする場合などには,洗浄体との接触圧を20
0gf〜1kgfに設定して良い。この場合,より好ま
しくは,200gf〜400gf,とりわけ300gf
近辺の接触圧の範囲で洗浄するとよい。
Further, as set forth in claim 6, the apparatus may further comprise means for maintaining the predetermined contact pressure. For example, in the case where a semiconductor wafer is taken as an example of the object to be cleaned, it is more preferable that the contact pressure when cleaning the device forming surface side is set to 50 or less, for example, about 30 gf. Is obtained. For example, when the back surface of the semiconductor wafer, that is, the surface on which the device is not formed is to be cleaned, the contact pressure with the cleaning body is set at 20.
It may be set to 0 gf to 1 kgf. In this case, more preferably, 200 gf to 400 gf, especially 300 gf
It is good to wash within the range of the contact pressure in the vicinity.

【0014】また請求項7に記載したように,退避状態
において前記洗浄体を洗浄する手段をさらに具備してい
ても良い。例えば洗浄終了後,次の洗浄を行う前に,被
洗浄処理体から待避させた位置にてその都度洗浄体自体
を適宜の洗浄液で洗浄するようにすれば,洗浄の際に常
に清浄な洗浄体でこれを行うことができる。
Further, as set forth in claim 7, a means for cleaning the cleaning body in the retracted state may be further provided. For example, after cleaning is completed, before the next cleaning is performed, the cleaning body itself may be washed with an appropriate cleaning liquid at a position evacuated from the cleaning target object, so that a clean cleaning body is always provided at the time of cleaning. You can do this with

【0015】請求項8によれば,被洗浄処理体の洗浄対
象面を洗浄体と対面させるようにして前記被洗浄処理体
を保持し,前記洗浄体を前記被洗浄処理体の洗浄対象面
に接触させて洗浄対象面を洗浄する洗浄方法において,
前記洗浄体を前記被洗浄処理体の洗浄対象面から離した
状態で前記洗浄対象面上の所定の位置まで移動させる第
1工程と,前記洗浄体を前記洗浄対象面上の所定の位置
に接触するまで下降させる第2工程と,前記洗浄体及び
前記被洗浄処理体を相対的に移動させて,所定の接触圧
で前記被洗浄処理体の洗浄対象面を洗浄する第3工程を
備える洗浄方法が提供される。
According to the eighth aspect, the object to be cleaned is held such that the surface to be cleaned of the object to be cleaned faces the cleaning body, and the object to be cleaned is placed on the surface to be cleaned of the object to be cleaned. In the cleaning method of contacting and cleaning the surface to be cleaned,
A first step of moving the cleaning body to a predetermined position on the cleaning target surface in a state where the cleaning body is separated from the cleaning target surface of the cleaning target body, and contacting the cleaning body with a predetermined position on the cleaning target surface And a third step of relatively moving the cleaning body and the cleaning target body to clean the surface to be cleaned of the cleaning target body with a predetermined contact pressure. Is provided.

【0016】また請求項9によれば,被洗浄処理体の洗
浄対象面を洗浄体と対面させるようにして前記被洗浄処
理体を保持して前記被洗浄処理体を回転させ,前記洗浄
体を前記被洗浄処理体の洗浄対象面に接触させて洗浄対
象面を洗浄する洗浄方法において,前記洗浄体を前記被
洗浄処理体の洗浄対象面から離した状態で前記洗浄対象
面上の所定の位置まで移動させる第1工程と,前記洗浄
体を前記洗浄対象面上の所定の位置に接触するまで下降
させる第2工程と,前記洗浄体を前記被洗浄処理体の洗
浄対象面上で移動させながら,前記洗浄体を前記洗浄対
象面に所定の接触圧で接触させて洗浄対象面を洗浄する
第3工程を備える洗浄方法が提供される。
According to a ninth aspect of the present invention, the object to be cleaned is held so that the surface to be cleaned of the object to be cleaned faces the object to be cleaned, the object to be cleaned is rotated, and the object to be cleaned is rotated. In a cleaning method for cleaning a cleaning target surface by contacting the cleaning target surface of the cleaning target body, a predetermined position on the cleaning target surface in a state where the cleaning body is separated from the cleaning target surface of the cleaning target body A first step of moving the cleaning body to a predetermined position on the surface to be cleaned, and a second step of lowering the cleaning body until the cleaning body comes into contact with a predetermined position on the surface to be cleaned. And a cleaning method including a third step of cleaning the surface to be cleaned by bringing the cleaning body into contact with the surface to be cleaned at a predetermined contact pressure.

【0017】これら請求項8,9の洗浄方法において,
請求項10に記載したように,前記被洗浄処理体の洗浄
対象面に対する前記洗浄体の接触圧は,第3工程よりも
前に設定されていても良い。また請求項11に記載した
ように,前記被洗浄処理体の洗浄対象面に対する前記洗
浄体の接触圧は,予めプログラムされていても良い。ま
た請求項12に記載したように,前記被洗浄処理体の洗
浄対象面に対する前記洗浄体の接触圧は,第3工程の間
一定に保たれても良い。また請求項13に記載したよう
に,前記被洗浄処理体の洗浄対象面に対する前記洗浄体
の接触圧は,前記被洗浄処理体の洗浄対象面に応じて変
更されても良い。また請求項14に記載したように,前
記被洗浄処理体の洗浄対象面に対する前記洗浄体の接触
圧は常時測定又は検出されていても良い。
In the cleaning method according to claims 8 and 9,
As set forth in claim 10, the contact pressure of the cleaning body with respect to the surface to be cleaned of the cleaning target body may be set before the third step. As described in claim 11, the contact pressure of the cleaning body with respect to the surface to be cleaned of the cleaning target body may be programmed in advance. As described in claim 12, the contact pressure of the cleaning body with respect to the surface to be cleaned of the cleaning target body may be kept constant during the third step. According to a thirteenth aspect of the present invention, the contact pressure of the cleaning object with respect to the surface to be cleaned of the object to be cleaned may be changed according to the surface to be cleaned of the object to be cleaned. As described in claim 14, the contact pressure of the cleaning body with respect to the surface to be cleaned of the cleaning target body may be constantly measured or detected.

【0018】[0018]

【発明の実施の形態】以下,本発明の実施の形態を図に
基づいて説明すると,本実施の形態は被洗浄処理体であ
る半導体ウエハの表面に対して,いわゆるスクラブ洗浄
を行うための洗浄装置として構成されており,図1は本
実施の形態にかかる洗浄装置1の概略構成を平面から示
しており,被洗浄処理体である半導体ウエハ(以下,
「ウエハ」という)Wは,別設のモータなどの回転駆動
装置(図示せず)によって比較的低速で回転するスピン
チャック2の上に,例えば真空吸着やベルヌーイチャッ
ク方式によって保持されるようになっている。またこの
スピンチャック2の下方には,ウエハWの洗浄時に,洗
浄液が装置外部へ飛散することを防止するためのカップ
3が設けられている。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. This embodiment is directed to cleaning for performing a so-called scrub cleaning on the surface of a semiconductor wafer to be cleaned. FIG. 1 is a plan view showing a schematic configuration of a cleaning apparatus 1 according to the present embodiment, and is a semiconductor wafer (hereinafter, referred to as a cleaning target).
The “wafer” W is held on a spin chuck 2 that rotates at a relatively low speed by a rotation drive device (not shown) such as a separate motor, for example, by vacuum suction or a Bernoulli chuck method. ing. A cup 3 is provided below the spin chuck 2 to prevent the cleaning liquid from scattering outside the apparatus when cleaning the wafer W.

【0019】そして前記ウエハWを洗浄するための洗浄
体等を備えた洗浄機構10は,前記スピンチャック2の
一側近傍に配置されている。この洗浄機構10において
は,図2にその詳細を示したように,洗浄装置1本体に
対して固定されている基台11の下面に,ブラケット1
2が固着され,さらにその摺動部13aが図中の往復矢
印A1のように上下スライドする上下動シリンダ13
が,このブラケット12に固定されている。前記摺動部
13aは,その上下動(往復矢印A1)によって,モー
タ14などがその上面に配置されている支持板15全体
を上下動(往復矢印A2)させるようになっている。
A cleaning mechanism 10 including a cleaning body for cleaning the wafer W is disposed near one side of the spin chuck 2. As shown in detail in FIG. 2, the cleaning mechanism 10 includes a bracket 1 on a lower surface of a base 11 fixed to the main body of the cleaning device 1.
2 is fixed, elevating cylinder 13, further the sliding portion 13a is vertical slide as reciprocating arrow A 1 in FIG.
Are fixed to the bracket 12. The vertical movement (reciprocating arrow A 1 ) of the sliding portion 13 a causes the motor 14 and the like to vertically move (reciprocating arrow A 2 ) the entire support plate 15 disposed on the upper surface thereof.

【0020】そしてかかる支持板15の上下動を安定し
てかつ円滑に行うため,支持板15とブラケット12と
の間には上下方向にガイド(図示せず)が設けられてお
り,また前記モータ14の外側を摺動自在なケーシング
16がブラケット12に固定されている。
In order to stably and smoothly move the support plate 15 up and down, a guide (not shown) is provided between the support plate 15 and the bracket 12 in the vertical direction. A casing 16 slidable on the outside of 14 is fixed to the bracket 12.

【0021】前記モータ14は,タイミング機構を有し
たタイプであり,その回転は,ベルトなどの伝達部材1
7を介して,支持板15に設けられている減速装置18
に伝達され,さらにこの減速装置18からの回転力は,
シャフト19へと伝達されるように構成されている。従
って,モータ14の回転軸の正反転によって,このシャ
フト19は,図中の往復回動矢印B1に示したように正
反転するようになっている。
The motor 14 is of a type having a timing mechanism, and its rotation is controlled by a transmission member 1 such as a belt.
7, the speed reducer 18 provided on the support plate 15
And the rotational force from the speed reducer 18 is
It is configured to be transmitted to the shaft 19. Thus, the positive reversal of the rotation shaft of the motor 14, the shaft 19 is adapted to positive inverted as shown in reciprocating rotation arrow B 1 in FIG.

【0022】前記シャフト19の上部は基台11を遊貫
しており,その上端部近傍には,適宜の支持柱20の下
端部が取り付けられており,さらにこの支持柱20の上
端部には,アーム部材21の一端部近傍が固着されてい
る。なおこれらシャフト19,支持柱20の外周は,ア
ーム部材21一端部下面に取り付けられた筒状のカバー
22で覆われており,さらにこのカバー22の内周に
は,このカバー22と回転摺動自在な形態の筒状のカバ
ー23が位置しており,このカバー23の下端部は,基
台11の上面に固定されている。従って,前記シャフト
19の正反転(往復回動矢印B1)により,アーム部材
21は,前記カバー22ごと,図2中の往復回動矢印B
2に示したように示したように,旋回するようになって
いる。また予めプログラムメモリ等に組み込まれたプロ
グラムに従って,このアーム部材21は,ウエハW上の
所定の範囲,例えば図1における往復回動矢印Xの範囲
で旋回させることも可能なように構成されている。
An upper portion of the shaft 19 penetrates the base 11, and a lower end of an appropriate support column 20 is attached near the upper end thereof. The vicinity of one end of the arm member 21 is fixed. The outer peripheries of the shaft 19 and the support column 20 are covered with a cylindrical cover 22 attached to the lower surface of one end of the arm member 21. A flexible cylindrical cover 23 is located, and the lower end of the cover 23 is fixed to the upper surface of the base 11. Accordingly, the forward / reverse rotation of the shaft 19 (reciprocating rotation arrow B 1 ) causes the arm member 21 to move with the cover 22 together with the reciprocating rotation arrow B in FIG.
As shown in Fig. 2, it turns. Further, the arm member 21 is configured to be capable of turning in a predetermined range on the wafer W, for example, in the range of the reciprocating rotation arrow X in FIG. 1 according to a program previously stored in a program memory or the like. .

【0023】前記アーム部材21は,フレーム21aと
カバー21bを有しており,後述の洗浄体51を回転駆
動させるためのモータ24は,このアーム部材21にお
けるカバー21bの下面に設けられている。前記アーム
部材21の他端部近傍には,図3に示したように,支持
部材31がフレーム21a上に固定されており,さらに
この支持部材31の一側には,この支持部材31に対し
て上下動自在に取り付けられた摺動体32の一端部が取
り付けられている。またこの摺動体32の下面は,フレ
ーム21a上に設けられた支持部材33の上面に設けら
れた圧力センサSに当接し,摺動体32の下方への押圧
力が測定可能なように構成されている。
The arm member 21 has a frame 21a and a cover 21b. A motor 24 for rotating and driving a cleaning body 51 described later is provided on the lower surface of the cover 21b of the arm member 21. As shown in FIG. 3, a support member 31 is fixed on the frame 21a near the other end of the arm member 21, and one side of the support member 31 is One end of a sliding body 32 which is mounted so as to be vertically movable is mounted. The lower surface of the sliding member 32 is configured to abut against a pressure sensor S provided on the upper surface of a support member 33 provided on the frame 21a so that the downward pressing force of the sliding member 32 can be measured. I have.

【0024】一方前記アーム部材21には,フレーム2
1aに対して固定されているエアシリンダ34が設けら
れており,このエアシリンダ34の下面には,前記摺動
体32を上下動させるための,摺動部材35が設けられ
ている。そしてこの摺動部材35は,供給部36からの
エアの供給,排気部37からのエアの排出によって,そ
の推力が自在に制御されるように構成されている。従っ
て,前記摺動部材35の上下動により,摺動体32は図
3中の往復矢印C1に示したように上下動するものであ
る。さらにこのエアシリンダ34における摺動部材35
のフリクションロスは,1gf以下となっている。なお
摺動部材35の先端部は,摺動体32に当接するように
し,摺動体32を下方に向かって一定圧で押圧するよう
に構成してもよい。
On the other hand, the arm 2 has a frame 2
An air cylinder 34 fixed to 1a is provided, and a sliding member 35 for moving the sliding body 32 up and down is provided on a lower surface of the air cylinder 34. The thrust of the sliding member 35 is freely controlled by the supply of air from the supply unit 36 and the discharge of air from the exhaust unit 37. Therefore, the vertical movement of the sliding member 35, sliding body 32 is to move up and down as shown in reciprocating arrow C 1 in FIG. Further, the sliding member 35 of the air cylinder 34
Is 1 gf or less. The distal end of the sliding member 35 may be configured to be in contact with the sliding body 32 and to press the sliding body 32 downward at a constant pressure.

【0025】前記摺動体32の他端部には,シャフト4
1の上端部が回転自在に支持されており,当該シャフト
41の下端部は,アーム部材21の下方に突出してい
る。そしてこのシャフト41の上端部近傍には,従動プ
ーリ42が固着されており,前出モータ24のシャフト
に固着された駆動プーリ43と,この従動プーリ42と
の間には,ベルト44が掛け渡されている。従って,モ
ータ24の回転力はこのベルト49を介してシャフト4
1に伝わり,それによってシャフト41は比較的高速に
回転するようになっている。
The other end of the sliding body 32 has a shaft 4
The upper end of the shaft 41 is rotatably supported, and the lower end of the shaft 41 projects below the arm member 21. A driven pulley 42 is fixed near the upper end of the shaft 41, and a belt 44 is stretched between the driven pulley 43 fixed to the shaft of the motor 24 and the driven pulley 42. Have been. Therefore, the rotational force of the motor 24 is transmitted to the shaft 4 via the belt 49.
1 so that the shaft 41 rotates at a relatively high speed.

【0026】前記シャフト41の突出部外周には,シャ
フトカバー45が配置されており,さらにこのシャフト
カバー45の内側には,スペーサ46を介してボールベ
アリング47が配され,シャフト41の外周を支持して
いる。そしてこのシャフト41の下端部には,防塵体4
8,取付部材49を介して,洗浄部材50が着脱自在に
設けられている。
A shaft cover 45 is disposed on the outer periphery of the protruding portion of the shaft 41. A ball bearing 47 is disposed inside the shaft cover 45 via a spacer 46 to support the outer periphery of the shaft 41. doing. The lower end of the shaft 41 is provided with a dustproof body 4.
8, a cleaning member 50 is detachably provided via the mounting member 49.

【0027】前記防塵体48は,上面が開口しており,
シャフトカバー45内に発生する塵埃,パーティクルが
そのまま下方に落下するのを防止しており,またシャフ
トカバー45下端面との間でシャフト41の上下動範囲
を規制している。
The dustproof body 48 has an open upper surface.
Dust and particles generated in the shaft cover 45 are prevented from falling down as it is, and the vertical movement range of the shaft 41 is restricted between the shaft cover 45 and the lower end surface.

【0028】前記取付部材49の下部に装着した洗浄部
材50は,本実施の形態においては,その下面に洗浄体
51として略円柱形状のスポンジ材を具備している。も
ちろん洗浄対象によって,かかるスポンジ材に代えて,
適宜毛足の硬いナイロンブラシなどの硬質ブラシや,毛
足の柔らかい,例えばモヘアブラシなどの軟質ブラシを
適宜洗浄体51として選択することが可能である。
In the present embodiment, the cleaning member 50 attached to the lower portion of the mounting member 49 has a substantially cylindrical sponge material as a cleaning body 51 on the lower surface thereof. Of course, depending on the object to be cleaned, instead of such sponge material,
It is possible to appropriately select a hard brush such as a nylon brush having a hard bristle or a soft brush having a soft bristle such as a mohair brush as the cleaning body 51 as appropriate.

【0029】そして以上の構成により,エアシリンダ3
4によって摺動体32が上下動(図3中の往復矢印
1)すると,洗浄部材50は図3中の往復矢印C2に示
したように,上下動する。また本実施の形態において
は,この上下動範囲は,5mm以下となるように設定され
ている。
With the above configuration, the air cylinder 3
When the sliding member 32 moves up and down (reciprocating arrow C 1 in FIG. 3) due to 4, the cleaning member 50 moves up and down as shown by the reciprocating arrow C 2 in FIG. In the present embodiment, the vertical movement range is set to be 5 mm or less.

【0030】前記洗浄部材50の下方における基台11
の上面には,上面が開口した洗浄容器52が設けられて
おり,常態,即ち図2,図3に示した状態においては,
洗浄部材50下面の洗浄体51の部分が,この洗浄容器
52内に入り込むようになっており,その状態で,洗浄
容器52側壁に形成された噴出口53から,適宜の洗浄
液,例えば純水が,この噴出口53を通じて,別設の洗
浄液噴出装置(図示せず)から洗浄体51に対して噴出
されるように構成されている。図3に示した状態,即ち
常態時における洗浄体51の下面は,スピンチャック2
上に保持されているウエハWの上面より2〜3mm低くな
るように設定されている。即ち図3においてh=2〜3
mmである。
The base 11 below the cleaning member 50
A cleaning container 52 having an open upper surface is provided on the upper surface of the container. In the normal state, that is, in the state shown in FIGS.
A portion of the cleaning body 51 on the lower surface of the cleaning member 50 enters the cleaning container 52, and in this state, an appropriate cleaning liquid, for example, pure water is supplied from an ejection port 53 formed on the side wall of the cleaning container 52. The cleaning liquid is jetted from a separately provided cleaning liquid jetting device (not shown) to the cleaning body 51 through the jetting port 53. The lower surface of the cleaning body 51 in the state shown in FIG.
The height is set to be 2-3 mm lower than the upper surface of the wafer W held thereon. That is, in FIG.
mm.

【0031】本実施の形態にかかる洗浄装置1は,以上
のように構成されており,次にこの洗浄装置1を用い
て,スピンチャック2上に保持されているウエハWの上
面,即ちデバイス形成面のスクラブ洗浄を行う方法につ
いて説明すると,まず図2の状態から上下動シリンダ1
3を作動させて,その摺動部13aを引き上げ,アーム
部材21を上昇させて,洗浄部材50を洗浄容器52か
ら引き上げ,次にそのままの状態でモータ14を作動さ
せて,アーム部材21を旋回させ,そのままウエハW上
の所定位置,例えば中心にまで移動させる。
The cleaning apparatus 1 according to the present embodiment is configured as described above. Next, using this cleaning apparatus 1, the upper surface of the wafer W held on the spin chuck 2, ie, the device formation The method of scrub cleaning the surface will be described.
3, the sliding portion 13a is pulled up, the arm member 21 is raised, the cleaning member 50 is pulled up from the cleaning container 52, and then the motor 14 is operated as it is to rotate the arm member 21. Then, the wafer W is moved to a predetermined position on the wafer W, for example, to the center.

【0032】次いでモータ24を作動させて洗浄部材5
0を高速回転させながら,上下動シリンダ13の摺動部
13aを所定の位置にまで下降させて,洗浄部材50の
洗浄体51をウエハW表面に接触させ,エアシリンダ3
4の作動によって,図4に示したように,ウエハW表面
に対する洗浄体51の所定の接触圧を得る。この場合,
当該接触圧は,エアシリンダ34の制御によってなさ
れ,具体的には,例えば30gfに設定する。そしてか
かる場合,圧力センサSの検出信号によって,エアシリ
ンダ34の制御を行うように構成しておくことにより,
かかる接触圧の設定は自動的になされる。
Next, the motor 24 is operated to operate the cleaning member 5.
0 is rotated at a high speed, the sliding portion 13a of the vertically moving cylinder 13 is lowered to a predetermined position to bring the cleaning body 51 of the cleaning member 50 into contact with the surface of the wafer W, and the air cylinder 3 is rotated.
4, a predetermined contact pressure of the cleaning body 51 against the surface of the wafer W is obtained as shown in FIG. in this case,
The contact pressure is controlled by controlling the air cylinder 34, and specifically, is set to, for example, 30 gf. In such a case, by controlling the air cylinder 34 by the detection signal of the pressure sensor S,
The setting of the contact pressure is automatically performed.

【0033】例えば図2において,摺動部13aが下降
し待機状態の時に,下降状態である摺動体32の押圧を
圧力センサSで測定する。この測定値は,摺動体32に
かかる自重とエアシリンダ34による押圧力の和であ
り,即ち,前記接触圧に相当する。従って,エアシリン
ダ34の押圧力を制御することにより,所定の接触圧に
設定できる。
For example, in FIG. 2, when the sliding portion 13a is lowered and is in a standby state, the pressure of the sliding body 32 in the lowered state is measured by the pressure sensor S. This measured value is the sum of the weight of the sliding body 32 and the pressing force of the air cylinder 34, that is, it corresponds to the contact pressure. Therefore, by controlling the pressing force of the air cylinder 34, a predetermined contact pressure can be set.

【0034】またそのような接触圧の設定は,予めダミ
ーウエハを用いてプログラムしておくことにより,洗浄
部材50の下降によって自動的になされ,以後,待機中
に常時圧力センサSによって検出させることにより,微
調整のみを適宜実施するようにしてもよい。
The setting of such a contact pressure is automatically performed by lowering the cleaning member 50 by programming in advance using a dummy wafer. Thereafter, the contact pressure is constantly detected by the pressure sensor S during standby. , Only the fine adjustment may be appropriately performed.

【0035】そしてそのように接触圧が設定された洗浄
体51を高速回転させ,アーム部材21を,図1中のX
の範囲で往復回動させつつ,適宜の洗浄液,例えば純水
を洗浄体51部分に供給することにより,ウエハW表面
はその全域に渡って,スクラブ洗浄されるのである。洗
浄中,摺動体32,即ち洗浄部材50は,支持部材31
に対して矢印C1に示したように,上下動可能な状態で
あり,洗浄部材50が上下動したとしても,エアシリン
ダ34の押圧力は一定であるため,接触圧は常に一定に
設定することが可能となる。この場合,洗浄体51とウ
エハW表面との接触圧は,30gfに設定されているか
ら,洗浄体51がウエハW表面を傷つけるおそれはな
く,しかも十分な洗浄効果が得られる。
Then, the cleaning body 51 having the contact pressure thus set is rotated at a high speed, and the arm member 21 is moved to the position X in FIG.
By supplying an appropriate cleaning liquid, for example, pure water to the cleaning body 51 while reciprocating in the range, the surface of the wafer W is scrub-cleaned over the entire area. During cleaning, the sliding member 32, that is, the cleaning member 50,
As shown by the arrow C1, the contact pressure is always set to be constant because the pressing force of the air cylinder 34 is constant even if the cleaning member 50 moves up and down as shown by the arrow C1. Becomes possible. In this case, since the contact pressure between the cleaning body 51 and the surface of the wafer W is set to 30 gf, there is no possibility that the cleaning body 51 will damage the surface of the wafer W, and a sufficient cleaning effect can be obtained.

【0036】そしてそのようにして洗浄が終了すると,
上下動シリンダ13の作動によって,アーム部材21が
上昇し,次いでモータ14の作動によって,アーム部材
21は旋回待避して,洗浄部材50は洗浄容器52の上
方へと戻り,次いでそのまま下降して,洗浄体51が洗
浄容器52内に位置する。この状態で別設の洗浄液噴出
装置(図示せず)から洗浄体51に対して例えば純水な
どの洗浄液が噴出され,洗浄体51自身が洗浄に付され
て,清浄状態にされる。従って,次のウエハWに対して
洗浄を行う場合にも,常に清浄な状態の洗浄体51でこ
れを実施することが可能になっている。
When washing is completed in such a manner,
By the operation of the vertical movement cylinder 13, the arm member 21 is raised, and then by the operation of the motor 14, the arm member 21 is turned and retracted, and the cleaning member 50 returns to above the cleaning container 52, and then descends as it is. The cleaning body 51 is located in the cleaning container 52. In this state, a cleaning liquid such as pure water is jetted from the separately provided cleaning liquid jetting device (not shown) to the cleaning body 51, and the cleaning body 51 itself is subjected to cleaning to be cleaned. Therefore, even when cleaning is performed on the next wafer W, the cleaning can be performed with the cleaning body 51 that is always in a clean state.

【0037】その間,洗浄が終了したウエハWは,別設
の搬送装置(図示せず)によって,搬送され,次の洗浄
対象であるウエハWがスピンチャック2上に保持され,
以後,既述の洗浄プロセスと同様な手順が繰り返され
て,次々に被洗浄処理体であるウエハWが洗浄処理され
て行くのである。
In the meantime, the cleaned wafer W is transferred by a separate transfer device (not shown), and the next wafer W to be cleaned is held on the spin chuck 2.
Thereafter, the same procedure as the above-described cleaning process is repeated, and the wafers W to be cleaned are sequentially cleaned.

【0038】ところでそのようにして洗浄処理回数を重
ねていくと,洗浄体51には所定の荷重がかけられてい
るので,その弾性復元性が減退し,そのままでは,接触
圧が変動して,所期の洗浄効果が得られなかったり,あ
るいは過大な接触圧がウエハWに加わって,ウエハWが
ダメージを受けるおそれがある。
When the number of times of the cleaning process is increased in this manner, the elasticity of the cleaning body 51 is reduced because a predetermined load is applied to the cleaning body 51, and the contact pressure fluctuates as it is. The intended cleaning effect may not be obtained, or an excessive contact pressure may be applied to the wafer W to damage the wafer W.

【0039】しかしながら本実施の形態にかかる洗浄装
置1によれば,圧力センサSによって常時かかる接触圧
が監視されているので,前記所定の接触圧を実現してい
るエアシリンダ34を,この圧力センサSからの検出信
号に基づいて,所定の接触値になるように制御しておく
ことにより,常に接触圧は一定となり,前記した弾性復
元性が減退しても,常に所定の接触圧の下で,所期の洗
浄効果を実現することが可能である。従って洗浄回数を
重ねても,被洗浄処理体であるウエハWに対してダメー
ジを与えることはなく,極めて歩留まりの高い洗浄処理
を実施することができる。
However, according to the cleaning device 1 of the present embodiment, since the contact pressure is constantly monitored by the pressure sensor S, the air cylinder 34 that realizes the predetermined contact pressure is replaced with the pressure sensor S. By controlling the contact pressure to a predetermined value based on the detection signal from S, the contact pressure is always constant, and even if the elastic restorability described above decreases, the contact pressure is always maintained under the predetermined contact value. Thus, it is possible to achieve the desired cleaning effect. Therefore, even if the number of times of cleaning is increased, the wafer W to be cleaned is not damaged, and a cleaning process with a very high yield can be performed.

【0040】ところで洗浄回数を重ね,洗浄体51の弾
性復元性が著しく減退して,前記5mmの摺動範囲では,
所定の接触圧が得られないようになった場合には,洗浄
体51自体を交換することが望ましいが,それを検知し
て所定の警告信号を発する装置を備えておけば,洗浄体
51の交換時期や,メンテナンス時期を事前に把握する
ことができ,不測の事態が発生することを未然に防止す
ることができる。例えば洗浄体51弾性復元性が減退し
て洗浄中に摺動体32が下がり,圧力センサSに当接す
るのを検知することにより,前記対応が可能となる。な
お摺動体32の側方に,光電型等の位置センサPSを配
置して,洗浄中の摺動体32の下がりすぎを検知するよ
うにしてもよい。
By the way, the number of times of cleaning is increased, and the elastic restoring property of the cleaning body 51 is remarkably reduced.
When the predetermined contact pressure cannot be obtained, it is desirable to replace the cleaning body 51 itself. However, if a device that detects this and issues a predetermined warning signal is provided, the cleaning body 51 can be replaced. The replacement time and the maintenance time can be known in advance, and the occurrence of an unexpected situation can be prevented. For example, by detecting that the elasticity of the cleaning body 51 is reduced and the sliding body 32 is lowered during cleaning and comes into contact with the pressure sensor S, the above-described measures can be taken. Note that a position sensor PS such as a photoelectric sensor may be arranged on the side of the sliding body 32 to detect that the sliding body 32 is lowered too much during cleaning.

【0041】また前記実施の形態ににかかる洗浄装置1
において,シャフト41を支持している摺動体32は,
その摺動範囲が5mm以下に設定されているから,接触圧
の調整のためにエアシリンダ34の摺動部材35を適宜
摺動させても,ベルト44と従動プーリ42との位置関
係に過大な変位が発生してシャフト41の回転が変動す
ることはなく,またシャフト41に対しては,極めて効
率よくロスのない回転力が伝達される。従って処理回数
を重ねても,各被洗浄処理体において個体差のない,常
に一定の質を維持した均一な洗浄処理が実施できるもの
である。
The cleaning apparatus 1 according to the above embodiment
In the above, the sliding body 32 supporting the shaft 41 is
Since the sliding range is set to 5 mm or less, even if the sliding member 35 of the air cylinder 34 is appropriately slid for adjusting the contact pressure, the positional relationship between the belt 44 and the driven pulley 42 is excessive. The rotation of the shaft 41 does not fluctuate due to displacement, and the rotational force without loss is transmitted to the shaft 41 extremely efficiently. Therefore, even if the number of times of processing is increased, uniform cleaning processing can be performed without any individual difference between the cleaning target bodies and always maintaining a constant quality.

【0042】なお前記実施の形態においては,洗浄対象
面が被洗浄処理体であるウエハWの表面,即ちデバイス
形成面であったため,接触圧を30gfに設定してあっ
たが,洗浄対象面がウエハWの裏面,即ちデバイス非形
成面である場合には,接触圧を変更して,例えば洗浄体
51がPVAスポンジの場合,200gf〜1kgf,
好ましくは200gf〜400gf,とりわけ300g
f近辺に設定しておくことにより,裏面に対してダメー
ジを与えることなく,かつ十分な洗浄効果を得ることが
できる。
In the above embodiment, the contact pressure was set to 30 gf because the surface to be cleaned was the surface of the wafer W to be cleaned, that is, the device forming surface. When the cleaning body 51 is a PVA sponge, the contact pressure is changed in the case of the back surface of the wafer W, that is, in the case of the device non-forming surface, for example, 200 gf to 1 kgf.
Preferably 200 gf to 400 gf, especially 300 gf
By setting it near f, a sufficient cleaning effect can be obtained without damaging the back surface.

【0043】ところで一般的に,例えば被洗浄処理体で
あるウエハについては,前処理の種類によっては,その
ようにウエハの表裏面,即ちデバイス形成面と,デバイ
ス非形成面の両方を洗浄する必要があるが,既述したよ
うに,その場合の洗浄に当たっては,洗浄体51と洗浄
対象面との接触圧の設定を,ウエハ表裏面によって変え
た方が,ダメージのない効果的な洗浄が得られる。
In general, for example, for a wafer to be cleaned, depending on the type of pretreatment, it is necessary to clean both the front and back surfaces of the wafer, that is, both the device forming surface and the device non-forming surface. However, as described above, in the case of cleaning in this case, if the setting of the contact pressure between the cleaning body 51 and the surface to be cleaned is changed depending on the front and back surfaces of the wafer, effective cleaning without damage can be obtained. Can be

【0044】従って,例えばそのように接触圧の設定を
デバイス形成面用と非形成面用とに予め区別した2種類
の洗浄装置を具備し,一の洗浄装置においては,デバイ
ス形成面のみを洗浄するようにし,他の洗浄装置におい
ては,デバイス非形成面のみを洗浄するようにした,い
わゆるハイブリッド型の複合洗浄装置を構成すれば,被
洗浄処理体の洗浄を極めて効率よく,かつ効果的に実施
することができる。かかる場合,例えば個々の洗浄装置
における保持装置,例えば前出実施の形態におけるスピ
ンチャック間で,被洗浄処理体を搬送中に表裏逆にして
搬送する搬送装置を設けておけば,連続して被洗浄処理
体の表裏を洗浄できる洗浄装置を提供することができ
る。
Therefore, for example, two types of cleaning devices are provided in which the setting of the contact pressure is previously distinguished between the device forming surface and the non-forming surface. In one cleaning device, only the device forming surface is cleaned. In other cleaning apparatuses, a so-called hybrid-type composite cleaning apparatus that cleans only the non-device-formed surface can be extremely efficiently and effectively cleaned. Can be implemented. In such a case, for example, if a transport device that transports the object to be cleaned upside down during transport is provided between the holding devices in the individual cleaning devices, for example, the spin chucks in the above-described embodiment, the transport device is continuously mounted. A cleaning device capable of cleaning the front and back of the cleaning processing body can be provided.

【0045】なお前記実施の形態にかかる洗浄装置1に
おけるエアシリンダ34は,その摺動部35が下部に位
置している摺動体32に対して,上方からこれをいわば
押圧することによって,所定の接触圧を得ていたが,か
かる構成に変えて,例えば図5に示した構成としてもよ
い。
The air cylinder 34 in the cleaning device 1 according to the above-described embodiment is pressed against the sliding body 32 whose sliding portion 35 is located at a lower portion from above, so to speak, by a predetermined amount. Although the contact pressure has been obtained, the configuration shown in FIG. 5 may be used instead of this configuration.

【0046】図5に示した例においては,摺動部35’
が上方に位置するエアシリンダ34’を備え,摺動体3
2と一体になった適宜の被押圧部61を,この摺動部3
5’によって上昇,下降させるように構成したものであ
る。かかる構成によれば,図6に示したように,エアシ
リンダ34’の摺動部35’の上下動推力の調整のみに
よって,洗浄体51のウエハに対する接触圧が得られ
る。即ち原理的には,図7に示したように,フローティ
ング構成となっている。従って,所定の接触圧を得る場
合,摺動体32,従動プーリ42を含めた洗浄部材50
の自重から,所望する所定の接触圧荷重を差し引いた推
力をエアシリンダ34’によって得ればよく,制御が容
易で,より微調整が簡単になっている。従って,接触圧
の小さい,いわゆるデバイス形成面の洗浄に適してい
る。
In the example shown in FIG. 5, the sliding portion 35 '
Is provided with an air cylinder 34 'positioned above,
The appropriate pressed part 61 integrated with the sliding part 3 is
It is configured to be raised and lowered by 5 '. According to such a configuration, as shown in FIG. 6, the contact pressure of the cleaning body 51 with respect to the wafer can be obtained only by adjusting the vertical thrust of the sliding portion 35 'of the air cylinder 34'. That is, in principle, it has a floating configuration as shown in FIG. Therefore, when a predetermined contact pressure is obtained, the cleaning member 50 including the sliding body 32 and the driven pulley 42 is used.
A thrust obtained by subtracting a desired predetermined contact pressure load from the own weight may be obtained by the air cylinder 34 ', so that the control is easy and the fine adjustment is easier. Therefore, it is suitable for cleaning a so-called device forming surface having a small contact pressure.

【0047】なお前記した各実施の形態は,いずれも被
洗浄処理体が半導体ウエハであったが,もちろんこれに
限らず,例えばLCD基板であっても本発明は適用でき
る。また叙上の本発明の実施の形態でも述べたように,
本発明の作用効果,即ちブラシ,スポンジ等を被洗浄処
理体の洗浄対象面に接触させて,ダメージのない洗浄を
行うことに着目すれば,単なる洗浄のみならず,例えば
所定の液剤を被処理体の表面に塗布する場合の,塗布方
法,塗布装置に対しても,本発明は応用できるものであ
る。
In each of the above-described embodiments, the object to be cleaned is a semiconductor wafer. However, the present invention is not limited to this. For example, the present invention can be applied to an LCD substrate. Also, as described in the embodiment of the present invention described above,
Focusing on the function and effect of the present invention, that is, performing a damage-free cleaning by bringing a brush, a sponge, or the like into contact with the surface to be cleaned of the object to be cleaned, not only a simple cleaning but also, for example, a predetermined liquid material is processed. The present invention can also be applied to a coating method and a coating device when coating on the body surface.

【0048】[0048]

【発明の効果】請求項1,2,3,6の洗浄装置は,被
洗浄処理体の洗浄対象面を洗浄体が傷つけることはな
く,例えば被洗浄処理体が半導体ウエハの場合,デバイ
ス形成面に対しての洗浄にとって好適である。また,洗
浄体に偏り,「くせ」,粗密があっても,常に接触圧が
所定の値に維持されるので,追従性が良好で安定した洗
浄を実施することができ,その都度接触圧の調整を別途
行う必要はない。しかもデバイス形成面に対して洗浄体
が傷つけるおそれはないものである。またデバイス非形
成面の洗浄にも好適であり,当該面を傷つけることな
く,必要かつ十分な洗浄を実施することができる。
According to the cleaning apparatus of the first, second, third, and sixth aspects, the cleaning object does not damage the surface to be cleaned of the object to be cleaned. It is suitable for cleaning against. In addition, even if the cleaning body is uneven, uneven, or uneven, the contact pressure is always maintained at a predetermined value, so that it is possible to perform cleaning with good followability and stable cleaning. No separate adjustment is required. In addition, there is no possibility that the cleaning body is damaged on the device forming surface. It is also suitable for cleaning the surface on which no device is formed, and can perform necessary and sufficient cleaning without damaging the surface.

【0049】請求項4の洗浄装置によれば,被洗浄処理
体の洗浄対象面への塵埃の付着を低減できる。請求項5
によれば,フリクションロスが略1gf以下のシリンダ
を使用すれば,洗浄体と被洗浄処理体の洗浄対象面との
接触圧を微調整するあたり正確な調整を実現することが
可能になる。請求項7によれば,常に清浄な洗浄体で洗
浄を実施することができ,被洗浄処理体に対して均一な
洗浄効果が得られ,この点から歩留まりの向上が図れ
る。
According to the cleaning apparatus of the fourth aspect, it is possible to reduce the adhesion of dust to the surface to be cleaned of the object to be cleaned. Claim 5
According to this, if a cylinder having a friction loss of about 1 gf or less is used, accurate adjustment can be realized when finely adjusting the contact pressure between the cleaning object and the surface to be cleaned of the object to be cleaned. According to the seventh aspect, the cleaning can always be performed with a clean cleaning body, and a uniform cleaning effect can be obtained for the cleaning target body. In this regard, the yield can be improved.

【0050】また請求項8,9,10,11,12,1
3,14の洗浄方法によっても,被洗浄処理体の洗浄対
象面を傷つけることなく洗浄でき,例えば被洗浄処理体
が半導体ウエハの場合,デバイス形成面に対しての洗浄
にとって好適である。また,洗浄体に偏り,「くせ」,
粗密があっても,常に接触圧が所定の値に維持されるの
で,追従性が良好で安定した洗浄を実施することがで
き,その都度接触圧の調整を別途行う必要はない。しか
もデバイス形成面に対して洗浄体が傷つけるおそれはな
いものである。またデバイス非形成面の洗浄にも好適で
あり,当該面を傷つけることなく,必要かつ十分な洗浄
を実施することができる。
Claims 8, 9, 10, 11, 12, 1
According to the cleaning methods 3 and 14, cleaning can be performed without damaging the surface to be cleaned of the object to be cleaned. For example, when the object to be cleaned is a semiconductor wafer, it is suitable for cleaning the device forming surface. In addition, it is biased toward the washing body,
Even if the density is uneven, the contact pressure is always maintained at a predetermined value, so that it is possible to carry out stable cleaning with good followability, and it is not necessary to separately adjust the contact pressure each time. In addition, there is no possibility that the cleaning body is damaged on the device forming surface. It is also suitable for cleaning the surface on which no device is formed, and can perform necessary and sufficient cleaning without damaging the surface.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施の形態にかかる洗浄装置の平面説
明図である。
FIG. 1 is an explanatory plan view of a cleaning apparatus according to an embodiment of the present invention.

【図2】図1の洗浄装置における洗浄機構の縦断面説明
図である。
FIG. 2 is an explanatory longitudinal sectional view of a cleaning mechanism in the cleaning device of FIG. 1;

【図3】図2の洗浄機構における要部縦断面説明図であ
る。
FIG. 3 is an explanatory longitudinal sectional view of a main part of the cleaning mechanism of FIG. 2;

【図4】ウエハを洗浄している際の洗浄体とウエハとの
接触状況を示す側面説明図である。
FIG. 4 is an explanatory side view showing a contact state between the cleaning body and the wafer when the wafer is being cleaned.

【図5】フローティング方式で接触圧を得る構成の洗浄
機構の要部縦断面の説明図である。
FIG. 5 is an explanatory view of a vertical section of a main part of a cleaning mechanism configured to obtain a contact pressure by a floating method.

【図6】図5の洗浄機構における作用を説明するための
説明図である。
FIG. 6 is an explanatory diagram for explaining an operation of the cleaning mechanism of FIG. 5;

【図7】図5の洗浄機構における原理を説明するための
説明図である。
FIG. 7 is an explanatory diagram for explaining the principle of the cleaning mechanism of FIG. 5;

【符号の説明】[Explanation of symbols]

1 洗浄装置 2 スピンチャック 10 洗浄機構 13 上下動シリンダ 14 モータ 19 シャフト 21 アーム部材 24 モータ 34 エアシリンダ 41 シャフト 42 従動プーリ 43 駆動プーリ 44 ベルト 50 洗浄部材 51 洗浄体 S 圧力センサ W ウエハ REFERENCE SIGNS LIST 1 cleaning device 2 spin chuck 10 cleaning mechanism 13 up-down moving cylinder 14 motor 19 shaft 21 arm member 24 motor 34 air cylinder 41 shaft 42 driven pulley 43 drive pulley 44 belt 50 cleaning member 51 cleaning member S pressure sensor W wafer

Claims (14)

【特許請求の範囲】[Claims] 【請求項1】 洗浄体と,被洗浄処理体の洗浄対象面を
前記洗浄体と対面させるようにして前記被洗浄処理体を
保持する保持部材と,前記洗浄体を回転可能に支持する
洗浄体支持手段と,前記洗浄体支持手段が取り付けられ
たアーム部材と,前記アーム部材を旋回させるアーム旋
回手段と,前記アーム部材を昇降させるアーム昇降手段
と,前記洗浄体支持手段を昇降させる洗浄体昇降手段
と,を具備し,前記洗浄体を前記洗浄対象面に所定の接
触圧で接触させた状態で前記被洗浄処理体及び前記洗浄
体を相対的に移動させて前記被洗浄処理体の前記洗浄対
象面を洗浄する,洗浄装置。
1. A cleaning body, a holding member that holds the cleaning target so that a surface to be cleaned of the cleaning target faces the cleaning body, and a cleaning body that rotatably supports the cleaning target. Support means, an arm member to which the cleaning body supporting means is attached, an arm turning means for rotating the arm member, an arm lifting / lowering means for raising / lowering the arm member, and a cleaning body lifting / lowering means for raising / lowering the cleaning body supporting means. Means for cleaning the body to be cleaned by relatively moving the body to be cleaned and the body to be cleaned while the body to be cleaned is in contact with the surface to be cleaned at a predetermined contact pressure. A cleaning device that cleans the target surface.
【請求項2】 前記洗浄対象面に対する前記洗浄体の接
触圧を検知する手段をさらに具備する,請求項1に記載
の洗浄装置。
2. The cleaning apparatus according to claim 1, further comprising means for detecting a contact pressure of the cleaning body with respect to the surface to be cleaned.
【請求項3】 前記洗浄体の位置を検出する手段をさら
に具備する,請求項1又は2に記載の洗浄装置。
3. The cleaning apparatus according to claim 1, further comprising means for detecting a position of the cleaning body.
【請求項4】 前記洗浄対象面への塵埃の付着を防止す
る手段を有する,請求項1,2又は3のいずれかに記載
の洗浄装置。
4. The cleaning apparatus according to claim 1, further comprising means for preventing dust from adhering to the surface to be cleaned.
【請求項5】 前記洗浄体昇降手段は,流体によりピス
トンを移動させるシリンダである,請求項1,2,3又
は4のいずれかに記載の洗浄装置。
5. The cleaning apparatus according to claim 1, wherein said cleaning body lifting / lowering means is a cylinder for moving a piston by a fluid.
【請求項6】 前記所定の接触圧を維持するための手段
をさらに具備する,請求項1,2,3,4又は5のいず
れかに記載の洗浄装置。
6. The cleaning apparatus according to claim 1, further comprising a means for maintaining the predetermined contact pressure.
【請求項7】 退避状態において前記洗浄体を洗浄する
手段をさらに具備する,請求項1,2,3,4,5又は
6のいずれかに記載の装置。
7. The apparatus according to claim 1, further comprising means for cleaning the cleaning body in a retracted state.
【請求項8】 被洗浄処理体の洗浄対象面を洗浄体と対
面させるようにして前記被洗浄処理体を保持し,前記洗
浄体を前記被洗浄処理体の洗浄対象面に接触させて洗浄
対象面を洗浄する洗浄方法において,前記洗浄体を前記
被洗浄処理体の洗浄対象面から離した状態で前記洗浄対
象面上の所定の位置まで移動させる第1工程と,前記洗
浄体を前記洗浄対象面上の所定の位置に接触するまで下
降させる第2工程と,前記洗浄体及び前記被洗浄処理体
を相対的に移動させて,所定の接触圧で前記被洗浄処理
体の洗浄対象面を洗浄する第3工程を備える洗浄方法。
8. The object to be cleaned is held by holding the object to be cleaned so that the surface to be cleaned of the object to be cleaned faces the object to be cleaned, and bringing the object to be cleaned into contact with the surface to be cleaned of the object to be cleaned. A cleaning method for cleaning a surface; a first step of moving the cleaning body to a predetermined position on the cleaning target surface in a state where the cleaning body is separated from the cleaning target surface of the cleaning target body; A second step of lowering the surface to be contacted with a predetermined position on the surface, and relatively moving the cleaning body and the object to be cleaned to clean the surface to be cleaned of the object to be cleaned with a predetermined contact pressure. A cleaning method comprising a third step of performing.
【請求項9】 被洗浄処理体の洗浄対象面を洗浄体と対
面させるようにして前記被洗浄処理体を保持して前記被
洗浄処理体を回転させ,前記洗浄体を前記被洗浄処理体
の洗浄対象面に接触させて洗浄対象面を洗浄する洗浄方
法において,前記洗浄体を前記被洗浄処理体の洗浄対象
面から離した状態で前記洗浄対象面上の所定の位置まで
移動させる第1工程と,前記洗浄体を前記洗浄対象面上
の所定の位置に接触するまで下降させる第2工程と,前
記洗浄体を前記被洗浄処理体の洗浄対象面上で移動させ
ながら,前記洗浄体を前記洗浄対象面に所定の接触圧で
接触させて洗浄対象面を洗浄する第3工程を備える洗浄
方法。
9. The cleaning target is held and the cleaning target is rotated so that the surface to be cleaned of the cleaning target faces the cleaning target, and the cleaning target is rotated by the cleaning target. In a cleaning method for cleaning a surface to be cleaned by contacting the surface to be cleaned, a first step of moving the cleaning body to a predetermined position on the surface to be cleaned while being separated from the surface to be cleaned of the object to be cleaned. A second step of lowering the cleaning body until it comes into contact with a predetermined position on the surface to be cleaned; and moving the cleaning body on the surface to be cleaned of the object to be cleaned while moving the cleaning body. A cleaning method including a third step of cleaning the surface to be cleaned by bringing the surface to be cleaned into contact with a predetermined contact pressure.
【請求項10】 前記被洗浄処理体の洗浄対象面に対す
る前記洗浄体の接触圧は,第3工程よりも前に設定され
ている,請求項8又は9に記載の洗浄方法。
10. The cleaning method according to claim 8, wherein a contact pressure of the cleaning body with respect to the surface to be cleaned of the cleaning target body is set before a third step.
【請求項11】 前記被洗浄処理体の洗浄対象面に対す
る前記洗浄体の接触圧は,予めプログラムされている,
請求項8,9又は10のいずれかに記載の洗浄方法。
11. A contact pressure of the cleaning body with respect to a cleaning target surface of the cleaning target body is programmed in advance.
The cleaning method according to claim 8, 9 or 10.
【請求項12】 前記被洗浄処理体の洗浄対象面に対す
る前記洗浄体の接触圧は,第3工程の間一定に保たれ
る,請求項8,9,10又は11のいずれかに記載の洗
浄方法。
12. The cleaning according to claim 8, wherein the contact pressure of the cleaning body with respect to the surface to be cleaned of the cleaning target body is kept constant during the third step. Method.
【請求項13】 前記被洗浄処理体の洗浄対象面に対す
る前記洗浄体の接触圧は,前記被洗浄処理体の洗浄対象
面に応じて変更される,請求項8,9,10,11又は
12のいずれかに記載の洗浄方法。
13. The cleaning object according to claim 8, wherein a contact pressure of the cleaning object with respect to the surface to be cleaned of the object to be cleaned is changed according to a surface to be cleaned of the object to be cleaned. The washing method according to any one of the above.
【請求項14】 前記被洗浄処理体の洗浄対象面に対す
る前記洗浄体の接触圧は常時測定又は検出されている,
請求項8,9,10,11,12又は13のいずれかに
記載の洗浄方法。
14. A contact pressure of the cleaning body with respect to a cleaning target surface of the cleaning target body is constantly measured or detected.
The cleaning method according to any one of claims 8, 9, 10, 11, 12, and 13.
JP28480698A 1994-05-12 1998-09-21 Cleaning device and cleaning method Expired - Fee Related JP3292367B2 (en)

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Application Number Priority Date Filing Date Title
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Related Parent Applications (1)

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Cited By (2)

* Cited by examiner, † Cited by third party
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JP2016131186A (en) * 2015-01-13 2016-07-21 株式会社ディスコ Spinner cleaning device
US9978617B2 (en) 2012-08-20 2018-05-22 Ebara Corporation Substrate cleaning apparatus and substrate processing apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9978617B2 (en) 2012-08-20 2018-05-22 Ebara Corporation Substrate cleaning apparatus and substrate processing apparatus
KR20180126082A (en) 2012-08-20 2018-11-26 가부시키가이샤 에바라 세이사꾸쇼 Substrate cleaning apparatus and substrate processing apparatus
US10707103B2 (en) 2012-08-20 2020-07-07 Ebara Corporation Substrate cleaning apparatus and substrate processing apparatus
JP2016131186A (en) * 2015-01-13 2016-07-21 株式会社ディスコ Spinner cleaning device

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