JPH11204394A - Proximity exposure method and apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an aligner which restrains adverse effects of Fresnel diffrac tion, while using a proximity exposure method, and an exposure method to be executed by the aligner. SOLUTION: A substrate 107 and a mask 106 are arranged facing apposite to each other. The mask 106 is irradiated from above with illumination light, and the pattern of the mask 106 is transferred to a photoreceptive layer on the substrate 107. In this case, exposure is performed while the substrate 107 and the mask 106 are changed in the thickness direction or the extending direction by the use of a control apparatus 121. Thereby the irregularities in light intensity on the substrate 107 caused by Fresnel diffraction can be made uniform.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a proximity exposure apparatus used in the manufacture of, for example, a semiconductor wafer or a liquid crystal display, and an exposure method using the same.

[0002]

2. Description of the Related Art As an exposure method used in the manufacture of semiconductor wafers and liquid crystal display devices, there is a proximity exposure method which is a so-called proximity exposure method. In this exposure method, a glass substrate or a semiconductor wafer coated with a photosensitive agent (hereinafter, simply referred to as a “substrate”) and a mask are supported in a state of being close to each other, and a parallel illumination light beam is irradiated from above the mask. To transfer the mask pattern drawn on the mask to the photosensitive agent. This exposure method does not require a complicated lens system and a high-precision stage as compared with the projection exposure method, so it is easy to reduce the cost. It has the advantage that defects due to peeling are unlikely to occur. A conventional proximity exposure method and a conventional exposure apparatus will be described below with reference to the drawings. FIG. 12 is a schematic view of a conventional proximity exposure apparatus. The exposure apparatus 50 shown in FIG. 12 roughly includes an exposure station 15 and a height measurement station 16. In FIG. 12, 12 is a guide rail serving as a device base, 14 is a mask height measuring device slidably mounted on the guide rail 12 in the X direction, and 11 is slidably mounted on the guide rail 12 in the X direction. Substrate X
A stage 10, a substrate Z stage connected on the substrate X stage 11, a flattening chuck 9 mounted on the substrate Z stage 10, a plurality of vertical moving elements 8 provided in the flattening chuck 9, 7 is a substrate sucked and held by the flattening chuck 9, 6 is a mask held opposite to the substrate 7, 5 is a mask chuck which sucks and holds the mask 6,
Reference numeral 13 denotes a substrate height measuring device installed at a position facing the substrate 7, 1 denotes a mercury lamp, 2 denotes a reflecting mirror, and 28 denotes a mercury lamp 1.
Shutters that can pass or block light rays
Reference numeral 3 denotes a fly-eye lens, 4 denotes a condenser lens, and 17 denotes a substrate stage constituted by the flattening chuck 9, the substrate Z stage 10, and the substrate X stage 11.

The conventional exposure apparatus 5 configured as described above
The operation of 0 will be described below. The substrate stage 17 on which the substrate 7 is placed moves on the guide rail 12 to the height measuring station 16, and the height of the upper surface of the substrate 7 is measured by the substrate height measuring device 13 installed above the substrate 7. Is done. On the other hand, the mask height measuring device 14 is
2 is moved to the exposure station 15 and the height of the lower surface of the mask 6 held by the mask chuck 5 is measured. Based on these measurement results, the protrusion amount of the vertical moving element 8 provided in the flattening chuck 9 and the substrate Z stage are adjusted so that the gap between the mask 6 and the substrate 7 becomes uniform and a desired value. 10 is adjusted in the Z direction. After that, the substrate stage 17 is moved to the exposure station 15. In the exposure station 15, the light emitted from the mercury lamp 1 is reflected by the reflecting mirror 2, guided to the fly-eye lens 3 through the shutter 28, made uniform by the fly-eye lens, and then converted into a parallel illumination light 23 by the condenser lens 4. Then, the photosensitive agent on the substrate 7 is exposed through the mask 6 supported by the mask chuck 5. After the desired exposure has been performed, the shutter 28 is closed.

[0004]

However, in the case of the proximity exposure apparatus 50 having such a configuration,
When the illumination light beam 23 passes through the mask pattern of the mask 6, Fresnel diffraction occurs, and the intensity distribution of the light beam that passes through the light beam has intensity different from that of the mask pattern. As a result, the pattern transferred to the substrate 7 by exposure and transfer has irregularities different from those of the above-mentioned mask pattern, and there is a problem that the resolution of the pattern drawn on the substrate 7 is deteriorated. This will be described with reference to the drawings and equations.

FIG. 13 shows how a parallel ray 61 is incident on a slit 60 having a width α. Here, the distance from the slit 60 along the traveling direction of the parallel ray 61 is z,
The wavelength of the parallel ray 61 is λ, and the illuminance at the slit 60 is A ′
When ^2, the light intensity i (√ (2 / (λz )) x) is known to be expressed by Equation 1 below. Formula 1 i (√ (2 / ( λz)) x) = (A '2/2) [{X (√ (2 / (λz)) (x + (α / 2)) -X (√ (2 / ( λz)) (x− (α / 2))｝ ² + ΔY (√ (2 / (λz)) (x + (α / 2)) − Y (√ (2 / (λz))) (x− (α / 2))｝ ² ] Here, X and Y are called Fresnel integrals, and are defined as in the following Expression 2.

Equation 2

(Equation 2)

The above equation 1 changes depending on z, α, and λ. Therefore, by using the parameter m shown in Equation 3 below, Equation 1 is expressed by Equation 4 shown below. Equation 3 z = (mα ² ) / (2λ)

[0008] Equation 4 i (√ (2 / ( λz)) x) = (A '2/2) [{X (2 / √m) ((x / α) + (1/2)) -X ( 2 / √m) ((x / α) − (１ ／))｝ ² + ｛Y (2 / √m) ((x / α) + (１ ／)) − Y (2 / √m) ((X / α)-(1/2))｝ ² ]

When the parameter m in the above equation 4 is 0.2, 0.
In the case of 4, 0.6, and 0.8, x / α is plotted on the horizontal axis, and the intensity distribution of the light intensity i is represented by a graph as shown in FIGS. In this case, changing the value of the parameter m as described above corresponds to changing the distance z from the slit 60, as can be seen from Equation (3).
The respective positions of the distance z corresponding to the respective parameters m are the positions of “a” to “d” shown in FIG. As can be seen from FIGS. 13 and 14, the intensity distribution of the parallel light beam 61 that has passed through the slit 60 is uneven, and changes depending on the distance z from the slit 60, and the position and number of peaks also change. Therefore, depending on the gap size between the mask 6 and the substrate 7 corresponding to the distance z,
Irregularities are also formed in the mask pattern exposed and transferred to the photosensitive agent on the substrate 7, which adversely affects the resolution performance of the pattern drawn on the substrate 7. The present invention has been made in order to solve such a problem, and it is an object of the present invention to provide an exposure apparatus which uses a proximity method and suppresses adverse effects of Fresnel diffraction, and an exposure method executed by the exposure apparatus. With the goal.

[0010]

In a proximity exposure method according to a first aspect of the present invention, an object to be exposed and a mask are arranged so as to face each other along a thickness direction, and illumination light is transmitted through the mask. A proximity exposure method for irradiating the object to be exposed with a mask pattern drawn on the mask and exposing and transferring the mask pattern onto the object to be exposed, wherein the illumination light is irradiated onto the object to be exposed, The exposure is performed while changing the distance between the exposure body and the mask.

In a proximity exposure method according to a second aspect of the present invention, an object to be exposed and a mask are arranged so as to face each other along a thickness direction, and illumination light is applied to the object to be exposed via the mask. A proximity exposure method for exposing and transferring a mask pattern drawn on the mask onto the object to be exposed, while irradiating the object with the illumination light, the object and the mask The exposure is performed while keeping the distance between the masks constant and moving the object to be exposed and the mask relative to each other.

A proximity exposure apparatus according to a third aspect of the present invention is arranged such that an object to be exposed and a mask are arranged to face each other along a thickness direction, and irradiates the object to be exposed with illumination light via the mask. A proximity exposure apparatus for exposing and transferring a mask pattern drawn on the mask onto the object to be exposed, wherein the object to be exposed stage supporting the object to be exposed, and the object to be exposed and the mask An exposure target stage first driving device for moving the exposure target stage in the thickness direction of the exposure target to adjust an interval, and synchronizing the irradiation of the illumination light to the exposure target stage first driving device; And a control device for adjusting the interval between the object to be exposed and the mask a plurality of times.

According to a fourth aspect of the present invention, there is provided a proximity exposure apparatus according to the third aspect, wherein the object stage is replaced with the object stage instead of the first stage drive device. An exposure object stage second drive device for moving the exposure object stage in the extension direction of the exposure object stage, the control device controls the exposure object stage second drive device to synchronize the exposure object stage with the irradiation of the illumination light. It can be configured to move a plurality of times.

A proximity exposure apparatus according to a fifth aspect of the present invention, in the exposure apparatus according to the third aspect, irradiates the illumination light only to a portion having a width B on a plane of the object to be exposed, Further, the irradiation unit further includes a moving exposure unit that scans and moves on the surface of the object to be exposed, and the control device includes:
In order to perform continuous exposure instead of adjusting the interval between the exposure target and the mask to a plurality of times in synchronization with the irradiation of the illumination light to the exposure target stage first driving device, The moving exposure unit may be moved at a constant speed V, and the exposure target stage first driving device may be driven at a cycle of B / V.

A proximity exposure apparatus according to a sixth aspect of the present invention, in the exposure apparatus according to the fourth aspect, irradiates the illumination light only to a portion having a width B on a plane of the object to be exposed, Further, the irradiation unit further includes a moving exposure unit that scans and moves on the surface of the object to be exposed, and the control device includes:
To perform continuous exposure instead of moving the object to be exposed a plurality of times in the extending direction of the object to be exposed in synchronization with the irradiation of the illumination light with respect to the object stage second driving device. Alternatively, the moving exposure unit may be moved at a constant speed V, and the exposure target stage second driving device may be driven in the extending direction at a cycle of B / V.

In a proximity exposure apparatus according to a seventh aspect of the present invention, an object to be exposed and a mask are arranged so as to face each other along a thickness direction, and illumination light is applied to the object to be exposed via the mask. A proximity exposure apparatus for exposing and transferring a mask pattern drawn on the mask onto the object to be exposed, wherein a mask support member for supporting the mask, and an interval between the object and the mask are adjusted. A first driving device for the mask supporting member for moving the mask supporting member in the thickness direction of the mask, and the object to be exposed is synchronized with the irradiation of the illumination light to the first driving device for the mask supporting member. A control device for adjusting the interval with the mask to a plurality of times.

In a proximity exposure apparatus according to an eighth aspect of the present invention, an object to be exposed and a mask are arranged so as to face each other along the thickness direction, and illumination light is applied to the object to be exposed via the mask. A proximity exposure apparatus that exposes and transfers a mask pattern drawn on the mask onto the object to be exposed, and irradiates the illumination light only to a part having a width B on a plane of the object to be exposed. And a moving exposure unit in which the illuminated portion scans and moves on the plane of the object to be exposed, and a mask deformation device that deflects a local illumination portion through which the illumination light having the width B passes through the mask. A gap measuring device for measuring a gap in the thickness direction between the mask and the object to be exposed in the local illumination portion, and moving the movable exposure portion at a constant speed V, and a measurement value by the gap measuring device. Set value B / V of the deformation cycle of the serial mask
And a control device that controls the mask deformation device to control the amount of deflection of the mask based on the above.

[0018]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A proximity exposure method and a proximity exposure apparatus according to embodiments of the present invention will be described.
This will be described below with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals. In the present embodiment, a glass substrate or a semiconductor wafer coated with a photosensitive agent corresponds to an example which fulfills the function of the “subject to be exposed” described in the above “Means for Solving the Problems”. An example that fulfills the function of “1 driving device” corresponds to the substrate Z stage driving device in the present embodiment, and an example that fulfills the function of “mask supporting member first driving device” corresponds to the mask Z stage driving device in the present embodiment. .

First Embodiment A proximity exposure apparatus according to the first embodiment will be described below with reference to FIG. The proximity exposure apparatus 100 shown in FIG. 1 roughly includes an exposure station 115, a height measurement station 116, and a control device 121. The exposure station 115 has an exposure unit 151 and a mask chuck 105 for holding the mask 106 by suction, as in the related art. The exposure unit 151 includes a mercury lamp 10
1 and a reflecting mirror 1 for reflecting light from the mercury lamp 101
02 and the mercury lamp 101 by the shutter driving device 119.
Shutter 1 driven to pass or block light
28, a fly-eye lens 103 through which light passing through the shutter 128 passes, and a condenser lens 104 which projects light from the fly-eye lens 103 onto the mask 106. The height measuring station 116 has a substrate height measuring device 113 for measuring the height from the reference position on the exposure surface 107a of the substrate 107 facing the mask 106.

A guide rail 112 serving as an apparatus base extends between the exposure station 115 and the height measuring station 116.
A mask height measuring device 114 for measuring the height of the mask 106 held by the mask chuck 105 from the reference position on the surface 106a facing the substrate 107 is guided by the guide rail 112 so as to be slidable in the X direction. Installed. Further, a substrate stage 117 is slidably mounted on the guide rail 112. The substrate stage 117 is a substrate X stage 11 slidably mounted on the guide rail 112 in the X direction.
1 and a substrate 10 mounted on a substrate X stage 111 in a Z direction corresponding to the thickness direction of the substrate 107 and the mask 106.
Substrate Z stage 110 for driving substrate 7 by substrate Z stage driving device 120 so as to be movable, and exposure surface 107a of substrate 107 mounted on substrate Z stage 110
Exposure surface 107 so that
a flattening chuck 109 for flattening a. or,
In the flattening chuck 109, a plurality of substrate supporting members 108 each of which is a rod-shaped member movable in the thickness direction for the above-mentioned flattening and supports the substrate 107, respectively.
And

The control device 121 controls the substrate height measuring device 1
13, the mask height measuring device 114, the shutter driving device 119, the substrate Z stage driving device 120, and the flattening chuck 109, which are connected to the exposure surface 107a of the substrate 107.
Measurement control, height measurement control of the opposing surface 106a of the mask 106, operation control of the shutter 103, Z of the substrate 107
Control of movement in the direction and movement control of the substrate support member 108 for flattening the exposure surface 107a based on the measurement result obtained from the substrate height measuring device 113 are performed.

The operation of the proximity exposure apparatus 100 configured as described above will be described below. The substrate stage 117 on which the substrate 107 is mounted moves to the height measuring station 116 on the guide rail 112, and the height of the exposure surface 107a of the substrate 107 is reduced by the substrate height measuring device 113 installed above the substrate 107. Measured. On the other hand, the mask height measuring device 114 moves on the guide rail 112 to the exposure station 115, and measures the height of the facing surface 106a of the mask 106. Then, based on the measurement results of the substrate height measuring device 113 and the mask height measuring device 114, the control device 12
Reference numeral 1 denotes a substrate supporting member and a substrate Z provided in a flattening chuck 109 such that the distance between the mask 106 and the substrate 107 in the thickness direction is uniform and a desired value.
The stage 110 is moved in the thickness direction. afterwards,
The substrate stage 117 moves to the exposure station 115. On the other hand, with respect to the illumination for exposure, light emitted from the mercury lamp 101 is reflected by the reflecting mirror 102 and is reflected by the shutter 128.
Through the fly-eye lens 103, and after being uniformed by the fly-eye lens 103, the light is converted into a parallel illumination light beam 123 by the condenser lens 104. The illuminating light beam 123 is irradiated to the photosensitive agent on the substrate 107 through the mask 106 supported by the mask chuck 105 for exposure.

In the above exposure, a shutter opening command is sent from the control device 121 to the shutter drive device 119, and in synchronization with this, the control device 121 sends the shutter Z command from the substrate Z stage drive device 120
It starts when a move command is sent to. As described above with reference to FIGS. 13 and 14, the mask 106 and the substrate 1
Since the exposure intensity distribution to the photosensitive agent due to Fresnel diffraction occurs in accordance with the distance between the mask and the mask, the exposure is performed by changing the distance between the mask 106 and the substrate 107 to a plurality.
The exposure intensity distribution can be made uniform. Therefore,
The substrate Z stage 110 is moved in the Z direction by a predetermined amount so as to achieve the uniformity so that the exposure intensity distribution is uniformed. The controller 121 sends a substrate closing instruction to the substrate Z stage driving device 1 at the same time.
A stop command is sent to the CPU 20 to end the exposure. The predetermined amount for achieving the uniformity is preferably, for example, an amount such that a peak portion and a valley portion of the exposure intensity overlap as shown in FIG. As described above, by moving the substrate 107 in the Z direction, by changing the distance between the mask 106 and the substrate 107 and performing a plurality of exposure operations, it is possible to suppress the influence of Fresnel diffraction, thereby achieving high-resolution exposure. Can be achieved.

As a modification of the above-described proximity exposure apparatus 100, a proximity exposure apparatus 200 shown in FIG.
Can also be configured. That is, in the above-described proximity exposure apparatus 100, the substrate Z stage 110 is used to change the distance between the mask 106 and the substrate 107.
07 is moved in the Z direction, but in the proximity exposure apparatus 200, the mask 106 is moved in the Z direction instead of moving the substrate 107.
It was configured to move in the direction. That is, the mask 10
The mask chuck 105 holding the mask 6 is attached to a mask Z stage 210, and the mask Z stage 210 is moved in the Z direction by a mask Z stage driving device 220. The operation of the mask Z stage driving device 220 is controlled by the control device 221 to control the amount of movement of the mask 106 in the Z direction. The proximity exposure apparatus 2
In the case of 00, the substrate stage 217 on which the substrate 107 is mounted is not provided with the substrate Z stage 110 provided in the proximity exposure apparatus 100. Other configurations are the same as those of the above-described proximity exposure apparatus 100.
The description is omitted.

As described above, the proximity exposure apparatus 200
In the proximity exposure apparatus 100 described above.
Substrate Z stage 11 performed during the exposure operation in
Instead of the movement of 0 in the Z direction, the mask 106 is moved in the Z direction by the mask Z stage 210 under the control of the control device 221. The other operations are the same as those in the case of the proximity exposure apparatus 100, and a description thereof will be omitted. As in the proximity exposure apparatus 200, by moving the mask 106 in the Z direction, the distance between the mask 106 and the substrate 107 is changed to perform a plurality of exposure operations, thereby suppressing the influence of Fresnel diffraction. And high resolution exposure can be achieved.

Further, the above-described proximity exposure apparatus 1
As a modification of 00, the proximity exposure apparatus 300 shown in FIG. That is, in the proximity exposure apparatus 100 described above, the substrate Z stage 110,
Was moved in the Z direction, but the proximity exposure apparatus 3
00, the substrate X stage 31 is controlled by the control device 321 at the time of exposure instead of the substrate Z stage driving device 120.
A substrate X stage driving device 320 for moving the substrate 1 in the X direction, which is the direction in which the substrate 107 extends, is provided. The other configuration is the same as the configuration of the proximity exposure apparatus 100 described above, and the description is omitted here.

The basic operation of the proximity exposure apparatus 300 thus configured is the same as that of the above-described proximity exposure apparatus 100, except that the control unit 321 controls the substrate X stage at each exposure. Drive 320
Is that the substrate X stage 311, that is, the substrate 107, is moved in the X direction. That is, similarly to the case of the proximity exposure apparatus 100, after the mask 106 and the substrate 107 are opposed to each other at a desired interval, a shutter opening command is sent from the control device 321 to the shutter driving device 119, and at the same time, Exposure is started when a movement command is sent from the control device 321 to the substrate X stage driving device 320, and the substrate X stage 311 moves by a predetermined amount in the X direction, and predetermined exposure is performed. At the end of the exposure, a shutter closing command is sent from the control device 321 to the shutter driving device 119, and at the same time, a stop command is sent from the control device 321 to the substrate X stage driving device 320 to end the exposure. The predetermined movement amount is an amount capable of making the exposure intensity distribution to the photosensitive agent by Fresnel diffraction uniform. In other words, it is preferable that the movement amount is such that the portion where the exposure intensity peaks and the portion where the valleys appear as shown in FIG. As described above, in the proximity exposure apparatus 300, the substrate 107 is moved in the X direction in each exposure operation, and the relative position between the substrate 107 and the mask 106 is maintained while maintaining the distance between the substrate 107 and the mask 106 in the Z direction. By performing exposure while changing, the influence of Fresnel diffraction can be suppressed, and high-resolution exposure can be achieved. As described above, in the proximity exposure apparatus 300, the substrate 107 is moved in the X direction, but the same effect can be obtained by moving the substrate 107 in the Y direction in the same manner as described above.

The above-described proximity exposure apparatus 200
Is a proximity exposure apparatus 4 shown in FIG.
00 can also be configured. That is, in the proximity exposure apparatus 200 described above, the mask Z stage driving device 2
20, the mask Z stage 210, ie, the mask 10
6 is moved in the Z direction. However, in the proximity exposure apparatus 400, the mask 10 is controlled by the control unit 421 at the time of exposure instead of the mask Z stage driving apparatus 220.
A mask X stage driving device 420 for moving the mask X stage 410 holding the mask 6 in the X direction is provided. The other configuration is the same as the configuration of the proximity exposure apparatus 200 described above, and a description thereof will be omitted.

The basic operation of the proximity exposure apparatus 400 configured as described above is the same as that of the above-described proximity exposure apparatus 200, except that the control unit 421 controls the mask X-stage drive at each exposure. Device 420
Is that the mask X stage 410, that is, the mask 106 is moved in the X direction. The operation of moving the mask 106 in the X direction for each exposure operation is basically the same as the operation of the proximity exposure apparatus 300 described above. Thus, the proximity exposure apparatus 400
In each exposure operation, the mask 106 is moved in the X direction, and exposure is performed while changing the relative position between the mask 106 and the substrate 107 while maintaining the distance between the substrate 107 and the mask 106 in the Z direction. The influence of Fresnel diffraction can be suppressed, and high-resolution exposure can be achieved. As described above, the proximity exposure apparatus 400
Then, the mask 106 was moved in the X direction.
06 can be moved in the Y direction in the same manner as described above, and the same effect can be obtained.

Second Embodiment A proximity exposure apparatus according to a second embodiment will be described below with reference to FIG. The basic configuration of the proximity exposure apparatus 500 shown in FIG. 5 is the same as the configuration of the proximity exposure apparatus 100 described above with reference to FIG. The difference between the two is that the exposure station 515 corresponds to the exposure station 115.
Is that a moving exposure unit 551 is provided instead of the exposure unit 151, and a scanning stage driving device 526 for moving the scanning stage 552 in which the moving exposure unit 551 is installed in the X and Y directions is provided. The operation of the scanning stage driving device 526 is controlled by the control device 521. The other configuration of the proximity exposure apparatus 500 is the same as the configuration of the proximity exposure apparatus 100. The moving exposure unit 551 will be described. In the exposure unit 151 of the proximity exposure apparatus 100, the mask 1
06 is configured to project the irradiation light to almost the entire surface, but the moving exposure unit 551 in the proximity exposure apparatus 500 applies the irradiation light to a part of the mask 106, for example, a part having a width B in the X direction. The projection is performed, and the irradiated portion is moved, for example, in the X direction. The moving exposure unit 551 includes
Mercury lamp 501 corresponding to mercury lamp 101 described above
And a reflecting mirror 502 corresponding to the above-described reflecting mirror 102, a fly-eye lens 503 corresponding to the above-described fly-eye lens 103, and a condenser lens 504 corresponding to the above-described condenser lens 104. The moving exposure unit 551 configured as described above is installed on the scanning stage 552, and the scanning stage 552 is moved at a speed V in the X direction, for example, by the scanning stage driving device 526.

The operation of the proximity exposure apparatus 500 thus configured will be described. As in the case of the proximity exposure apparatus 100 described above, after the substrate 107 and the mask 106 are opposed to each other, the scanning stage 552 is moved at a constant speed V, for example, X Scan in the direction. The control device 521 and the substrate Z stage driving device 520 move the substrate Z stage 110 in the Z direction in synchronization with the above-described scanning operation by the scanning stage 552.
At this time, the substrate Z stage 110 is moved in the Z direction by a repetitive operation of a cycle B / V as shown in FIG. 8 or FIG. Here, B is the above-mentioned irradiation width dimension, and V is the above-mentioned moving speed. The vertical axis in FIGS. 8 and 9 is described as “Z or X”, but in this example, it is replaced with “Z”. As described above, the irradiation light having the irradiation width dimension B is scanned at a speed V on the mask 106, that is, the substrate 107, and the substrate 107 is moved in the Z direction at a period B / V.
Focusing on a certain point of the substrate 107 irradiated with the irradiation light, the substrate 10 is irradiated at the time when the irradiation light is irradiated.
7 moves in the Z direction for one cycle. As described above, since the exposure intensity distribution to the photosensitive agent due to Fresnel diffraction occurs according to the distance between the mask 106 and the substrate 107, the exposure is performed by changing the distance between the mask 106 and the substrate 107. The exposure intensity distribution can be made uniform. Therefore, in the proximity exposure apparatus 500, since the irradiated portion having the irradiation width B scans the substrate 107 and the substrate 107 moves in the Z direction, the influence of the Fresnel diffraction over the entire exposed surface 107a of the substrate 107 is reduced. The exposure can be performed with high resolution.
In the proximity exposure apparatuses 100 to 400 described above, it is necessary to stop the exposure operation every time the mask 106 or the substrate 107 is moved in the thickness direction or moved in the extending direction. Device 5
At 00, the substrate 107 moves periodically in the Z direction in response to the irradiation portion having the irradiation width B scanning the substrate 107, so that the substrate 1 can be moved without stopping the exposure operation.
At 07, the exposure operation can be continuously performed on the entire exposure surface. Note that the amplitude width of the substrate 107 in one cycle is an amount by which the exposure intensity distribution can be made uniform.

Next, the above-described proximity exposure apparatus 50
A proximity exposure apparatus 600 which is a modification example of No. 0 will be described with reference to FIG. Proximity exposure apparatus 5
In the exposure operation, the substrate 107 is moved in the Z direction in the exposure operation. However, in the proximity exposure apparatus 600, the substrate 107 is moved at a predetermined cycle in the X direction while maintaining the space between the mask 106 and the substrate 107 in the Z direction. It was configured to move. That is, the control device 621 controls the substrate X stage 611 via the substrate X stage driving device 620.
Is moved in the X direction by the repetitive operation of the cycle B / V as shown in FIG. 8 or FIG. Here, B is the above-mentioned irradiation width dimension, and V is the above-mentioned moving speed. In addition, although the vertical axis in FIGS. 8 and 9 is described as “Z or X”, it is replaced with “X” in this example. Thus, the irradiation light having the irradiation width dimension B is applied to the mask 106,
, And by moving the substrate 107 in the X direction at a cycle B / V, focusing on a certain point of the substrate 107 irradiated with the irradiation light, the time during which the irradiation light is irradiated Then, the substrate 107 reciprocates in the X direction for one cycle. Although the distance between the substrate 107 and the mask 106 is kept constant, the above-mentioned exposure intensity distribution can be made uniform since the peak portion of the light intensity applied to the substrate 107 moves in the X direction. Therefore, in the proximity exposure apparatus 600, since the irradiated portion having the irradiation width B scans the substrate 107 and the substrate 107 moves in the X direction, the influence of the Fresnel diffraction over the entire exposed surface 107a of the substrate 107 is reduced. The exposure can be suppressed, high-resolution exposure can be performed, and the exposure operation can be continuously performed as described above. Note that the amplitude width of the substrate 107 in one cycle is an amount by which the exposure intensity distribution can be made uniform.

Third Embodiment Next, a proximity exposure apparatus according to a third embodiment will be described with reference to FIG. The proximity exposure apparatus 700 shown in FIG. 7 roughly includes an exposure unit 710, a mask deformation device 720, a gap measurement device 740, and a control device 750.
In FIG. 7, reference numeral 771 denotes a gantry, and 772 denotes a gantry 771.
773 is a Y-axis guide fixed to the Y-axis guide 772 and slidably mounted on the Y-axis guide 772 in the Y-direction.
Is an X axis guide fixed to the Y stage 773.
The mount 771 has a Z stage 7 movable in the Z direction.
The Z stage 788 has a substrate 107 attached thereto.
The substrate chuck 789 for holding the substrate is fixed. Further, a mask base 790 having one end fixed to the base 771 and the other end connected to the mask chuck 105 is attached to the base 771 so that the mask 106 is disposed above the substrate 107. Is
The mask 106 is held by suction.

An illumination scanning stage 775 slidably mounted in the X direction is mounted on the X-axis guide 774. The illumination scanning stage 775 has an illumination Z stage 776 slidably mounted in the Z direction, and a servomotor 777 fixed to the illumination scanning stage 775.
The illumination Z stage 776 is provided with a servo motor 77
7 moves in the Z direction by rotation of a ball screw 778 attached to the output shaft. Also, the Z of the lighting Z stage 776
The amount of movement in the direction is controlled by the control device 750 via the illumination Z-stage drive device 753 that drives the servomotor 777. The illumination Z stage 776 includes a local illumination unit 7
The local illumination unit 779 has a mercury lamp 78.
The irradiation light emitted from 3 and reflected by the reflecting mirror 784 and collected is supplied via an optical fiber 782. The supplied irradiation light is supplied to a lens 7 provided in an illumination Z stage 776.
For example, the light is formed as irradiation light having a width dimension B in the X direction through 85, and is irradiated on a later-described local deformation portion of the mask 106. Furthermore, the lighting Z stage 77
6, the mask deforming device 720 is attached. The mask deforming device 720 has a
9 is connected to a pneumatic pipe 780 whose other end is connected to a pneumatic source 781. Therefore, by blowing compressed air from the pneumatic source 781 to the mask 106 via the pneumatic piping 780, the mask 106 is locally bent toward the substrate 107. In addition, the irradiation light is projected from the local illumination unit 779 to the portion 106b closest to the substrate 107 among the bent portions.

Further, the substrate 107 is mounted on the Y stage 773.
An X-axis guide 791 is fixedly extended below the X-axis guide 791, and the X-axis guide 791 is slidable in the X direction by a driving device 794 in synchronization with the irradiation scanning stage. 786 are attached. The controller 750 calculates the distance between the facing surface 106a of the mask 106 in the portion 106b of the mask 106 that is bent closest to the substrate 107 and the exposed surface 107a of the substrate 107. The height of the opposing surface 106a in the bending portion 106b and the substrate 10
7, a gap measuring device 787 for measuring the height of the exposure surface 107a is fixed. The control device 750 includes an opposing surface 106 a in the bent portion 106 b of the mask 106.
A set value is supplied from a gap setting device 751 for setting a distance between the substrate and the exposure surface 107a of the substrate 107, and a measured value of the actual distance is supplied from a gap measuring device 787. Therefore, the control device 750 controls the operations of the illumination Z-stage driving device 753 and the servomotor 777 so that the actual measurement value becomes the above set value, and controls the movement amount of the illumination Z-stage 776 in the Z direction. I do. or,
The air pressure source 781 is controlled by the control device 750 to control the pressure of the compressed air to be sent out.
3, 794 are connected to the control device 750 to control the operation.

The operation of the proximity exposure apparatus 700 thus configured will be described below. First, scanning exposure using local illumination will be described. The light emitted from the mercury lamp 783 is condensed by the reflecting mirror 784, guided to one end of the optical fiber 782, and emitted from the other end. The emitted light flux is adjusted to a parallel light by the lens 785 in the local illumination unit 779, and is irradiated on the substrate 107. Local illumination unit 77
Reference numeral 9 denotes an X stage 775 and a Y stage 773 above the mask 106 and their respective driving devices 793 and 79.
2, the light can be radiated by scanning the entire surface of the substrate 107.

Next, a method for locally bringing the mask 106 and the substrate 107 close to each other will be described. Control device 750
The Z stage 788 is moved in the Z direction by the driving device 795 whose operation is controlled by the
07a and the opposing surface 106a of the mask 106 are adjusted in advance so as to approach several tens of microns. The exit portion of the irradiation light beam in the local illumination unit 779 has a nozzle shape, and the local illumination unit 779 is arranged above the mask 106.
By blowing out compressed air supplied from the pneumatic source 781 via the air pipe 780, the mask 106 is locally deformed. The pressure at the exit of the nozzle-shaped irradiation light beam depends on the distance between the tip of the nozzle and the upper surface 106c of the mask 106.
And the amount of deformation of the mask 106 also increases. On the other hand, the distance between the substrate 107 and the mask 106 is measured by a laser reflection type gap measuring device 787,
The output signal is supplied to the gap setting device 7 by the control device 750.
The difference signal is compared with the signal from the controller 51, and a deviation signal as a comparison result is supplied to the illumination Z-stage driving device 753. Lighting Z
The stage driving device 753 sends a control signal to the servomotor 777 in response to the deviation signal, drives the illumination Z stage 776 via the ball screw 778 in the Z direction, and adjusts the amount of deformation of the mask 106. Thereby, the substrate 107 and the mask 106 can be locally brought close to the set interval.

Next, the illumination scanning stage 775 is moved in the X and Y directions at a constant speed V by the driving devices 792 and 793 under the control of the controller 750, and the illumination light beam 7 having the width B
While scanning the substrate 107 at 11, the gap setting device 7
As a set value to be supplied to 51, a repetitive signal having a cycle B / V as shown in FIG. By operating in this manner, while a certain point on the mask 106 is scanned from one end to the other end of the illumination light beam 23 having the width B, the illumination Z stage 776 moves by one period in the Z direction. . The lighting Z stage 7
Along with the movement of 76 in the Z direction, the amount of deflection of the mask 106 toward the substrate 107 by the compressed air periodically changes as described above, and the interval between the mask 106 and the substrate 107 periodically changes. Therefore, the above-described proximity exposure apparatus 500
Similarly to the case of the above, since the exposure intensity distribution to the photosensitive agent by Fresnel diffraction occurs according to the distance between the mask 106 and the substrate 107, the exposure is performed by changing the distance between the mask 106 and the substrate 107. The exposure intensity distribution can be made uniform. As described above, in the proximity exposure apparatus 700, the irradiation portion having the irradiation width B
7 and scan the mask 1 in the irradiated area.
Since the distance between the substrate 06 and the substrate 107 is changed, the influence of Fresnel diffraction can be suppressed over the entire exposure surface 107a of the substrate 107, high-resolution exposure can be performed, and the exposure operation is continuously performed as described above. be able to.
The amplitude width of the illumination Z stage 776 in the Z direction in the Z direction is an amount that can make the exposure intensity distribution uniform, and is set arbitrarily according to the pressure of the compressed air sent from the pneumatic source 781. can do.

[0039]

According to the exposure method of the first embodiment of the present invention and the exposure apparatus of the third, fifth, seventh and eighth aspects, the control apparatus is provided, and Since the distance between the object to be exposed and the mask is fluctuated, light beams having various intensity distributions that pass through the mask and are generated on the object to be exposed due to Fresnel diffraction are superimposed and integrated, and the intensity distribution of the light beam varies. Can be reduced, and the unevenness of the pattern to be exposed and transferred can be reduced, so that high-resolution exposure can be performed. In addition, the unevenness of the pattern is
The unevenness of the pattern caused by the unevenness of the intensity distribution caused by the Fresnel diffraction.

Further, according to the exposure method of the second embodiment of the present invention and the exposure apparatus of the fourth and sixth aspects, the control apparatus is provided, and the distance between the object to be exposed and the mask is adjusted during the irradiation of the illumination light. Since the exposure target and the mask are relatively moved in the direction in which the exposure object extends, light beams having an intensity distribution determined by Fresnel diffraction that pass through the mask are superimposed while being shifted in the extension direction of the exposure target and the mask. By doing so, it is possible to accumulate and uniform the variation in light intensity, and to reduce the unevenness of the pattern to be exposed and transferred, so that high-resolution exposure can be performed.

According to the configuration of the exposure apparatus of the fifth embodiment and the sixth embodiment, the illumination light is transmitted over the width B on the plane of the object to be exposed.
And a moving exposure unit that irradiates only a part of the object and scans and moves the irradiated part on the plane of the object to be exposed, and moves the object to be exposed in a thickness direction or an extending direction at a cycle of B / V. Since it is moved, a point on the object to be exposed
The object to be exposed moves by one period in the thickness direction or the extension direction during irradiation from one end to the other end. Therefore, the movement operation of the object to be exposed and the exposure operation can be continuously performed.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a configuration of a proximity exposure apparatus according to a first embodiment of the present invention.

FIG. 2 is a view showing a modification of the exposure apparatus shown in FIG.

FIG. 3 is a view showing still another modification of the exposure apparatus shown in FIG.

FIG. 4 is a view showing another modification of the exposure apparatus shown in FIG.

FIG. 5 is a diagram illustrating a configuration of a proximity exposure apparatus according to a second embodiment of the present invention.

FIG. 6 is a view showing a modification of the exposure apparatus shown in FIG.

FIG. 7 is a diagram illustrating a configuration of a proximity exposure apparatus according to a third embodiment of the present invention.

FIG. 8 is a diagram illustrating an example of a movement of a substrate Z stage or a substrate X stage.

FIG. 9 is a view showing another example of the movement of the substrate Z stage or the substrate X stage.

FIG. 10 is a graph showing an example of a change in an interval between a substrate and a mask with respect to time.

FIG. 11 is a graph showing another example of a change in the interval between the substrate and the mask with respect to time.

FIG. 12 is a schematic view of a conventional proximity exposure apparatus.

FIG. 13 is a diagram illustrating a state in which a parallel light beam enters a slit.

FIG. 14 is a diagram showing an intensity distribution of a light beam passing through a slit.

[Explanation of symbols]

100: proximity exposure apparatus, 106: mask, 1
07: substrate, 110: substrate Z stage, 120: substrate Z
Stage driving device, 121: control device, 200: proximity exposure device, 210: mask Z stage, 220
... Mask Z stage driving device, 221 ... Control device, 30
0: proximity exposure apparatus, 320: substrate X stage driving apparatus, 321: control apparatus, 400: proximity exposure apparatus, 420: mask X stage driving apparatus, 421
... Control device, 500 ... Proximity exposure device, 521
... Control device, 551: Moving exposure unit, 600: Proximity exposure device, 621: Control device, 700: Proximity exposure device, 710: Exposure unit, 720: Mask deformation device, 740: Gap measuring device, 750: Control device .

Claims (9)

[Claims] An object to be exposed (107) and a mask (106).
And a proxy for irradiating illumination light onto the object to be exposed through the mask and exposing and transferring a mask pattern drawn on the mask onto the object to be exposed. A proximity exposure method, wherein exposure is performed while changing the distance between the object and the mask while the illumination light is being irradiated on the object. 2. An object to be exposed (107) and a mask (106).
And a proxy for irradiating illumination light onto the object to be exposed through the mask and exposing and transferring a mask pattern drawn on the mask onto the object to be exposed. A method of exposing the object, wherein the exposure is performed while the distance between the object and the mask is kept constant and the object and the mask are relatively moved during the irradiation of the object with the illumination light. A proximity exposure method. 3. An object to be exposed (107) and a mask (106).
And a proxy for irradiating illumination light onto the object to be exposed through the mask and exposing and transferring a mask pattern drawn on the mask onto the object to be exposed. An exposure stage, wherein the exposure stage supports the exposure target (117).
An exposure target stage first driving device (120) for moving the exposure target stage in a thickness direction of the exposure target to adjust a distance between the exposure target and the mask; and an exposure target stage. Proximity exposure, comprising: a control device (121) for adjusting a distance between the object to be exposed and the mask to a plurality of times in synchronization with the irradiation of the illumination light to the first drive device. apparatus. 4. An exposure target stage second drive device (320) for moving the exposure target stage in the extending direction of the exposure target object, instead of the exposure target stage first drive device.
4. The proximity exposure apparatus according to claim 3, wherein the control device moves the exposure target stage a plurality of times in synchronization with the irradiation of the illumination light with respect to the exposure target stage second driving device. 5. . 5. An object to be exposed (107) and a mask (106).
And a proxy for irradiating illumination light onto the object to be exposed through the mask and exposing and transferring a mask pattern drawn on the mask onto the object to be exposed. A mask exposure member (105) for supporting the mask, and a mask support member for moving the mask support member in a thickness direction of the mask to adjust a distance between the object and the mask. A first driving device (210), and a control device (221) for adjusting the distance between the object to be exposed and the mask to a plurality of times in synchronization with the irradiation of the illumination light to the mask driving member first driving device. And a proximity exposure apparatus. 6. A mask support member second drive device (410) for moving the mask support member in a direction in which the mask extends in place of the mask support member first drive device, wherein the control device includes: The proximity exposure apparatus according to claim 5, wherein the mask support member is moved a plurality of times in synchronization with the irradiation of the illumination light with respect to the mask support member second drive device. 7. A moving exposure section (55) which irradiates the illumination light only to a portion having a width B on the plane of the object to be exposed and scans and moves the irradiated part on the plane of the object to be exposed.
The control device may further comprise: adjusting the distance between the object and the mask to a plurality of times in synchronization with the irradiation of the illumination light with respect to the object stage first driving device. 4. The proxy according to claim 3, wherein the moving exposure unit is moved at a constant speed V and the exposure target stage first driving device is driven at a cycle of B / V to perform continuous exposure. Miti exposure equipment. 8. A moving exposure section (55) that irradiates the illumination light only to a portion having a width B on the plane of the object to be exposed, and the irradiated part scans and moves on the plane of the object to be exposed.
The control device may further include: moving the object to be exposed a plurality of times in the direction in which the object to be exposed extends in synchronization with the irradiation of the illumination light with respect to the object stage second driving device. Instead, in order to perform continuous exposure, the moving exposure unit is moved at a constant speed V, and the exposure target stage second driving device is driven in the extending direction at a cycle of B / V. The proximity exposure apparatus according to claim 4, wherein: 9. An object to be exposed (107) and a mask (106).
And a proxy for irradiating illumination light onto the object to be exposed through the mask and exposing and transferring a mask pattern drawn on the mask onto the object to be exposed. A moving exposure unit that irradiates the illumination light only to a part having a width B on the plane of the object to be exposed and scans and moves the irradiated part on the plane of the object to be exposed; 710) and a mask deformation device (720) for bending a local illumination portion through which the illumination light having the width B passes through the mask.
A gap measuring device (740) for measuring a gap in the thickness direction between the mask and the object to be exposed in the local illumination portion, and moving the moving exposure unit at a constant speed V, and using the gap measuring device. A control device (750) for causing the mask deformation device to control the amount of deflection of the mask based on the measured value and the set value B / V of the deformation period of the mask.
And a proximity exposure apparatus.