JPH1119567A - Wafer treatment device - Google Patents

Wafer treatment device

Info

Publication number
JPH1119567A
JPH1119567A JP17400097A JP17400097A JPH1119567A JP H1119567 A JPH1119567 A JP H1119567A JP 17400097 A JP17400097 A JP 17400097A JP 17400097 A JP17400097 A JP 17400097A JP H1119567 A JPH1119567 A JP H1119567A
Authority
JP
Japan
Prior art keywords
substrate
liquid
nozzle
developer
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17400097A
Other languages
Japanese (ja)
Inventor
Masami Otani
正美 大谷
Joichi Nishimura
讓一 西村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dainippon Screen Manufacturing Co Ltd
Original Assignee
Dainippon Screen Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Screen Manufacturing Co Ltd filed Critical Dainippon Screen Manufacturing Co Ltd
Priority to JP17400097A priority Critical patent/JPH1119567A/en
Publication of JPH1119567A publication Critical patent/JPH1119567A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To perform the uniform treatment by a treating liquid by supplying the liquid to a wafer uniformly. SOLUTION: After a developer supply nozzle 21 begins to move, a pump for a developer supply source 24 is started earlier by a specified time than the time at which the slit 21a of the developer supply nozzle 21 reaches one of the ends of a base W and a variable valve 25 is rapidly opened to switch an operation from a non-liquid supply state to a liquid supply state. At a time T2 when the slit 21a of the nozzle 21 reaches the other end of the wafer W, the variable valve 25 is gradually closed to switch, step by step, from the liquid supply state to the non-liquid supply state and the pump for the developer supply source 24 is stopped. Thus it is possible to gradually decrease the developer to be discharged from the nozzle 21 to the wafer W side, so that the developer is prevented from being ejected inertially from the inside of an area near the slit 21a of the nozzle 21. Therefore, the formation of an unintentional defective development part on a resist coat is prevented from occurring.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】この発明は、半導体ウェハ、
フォトマスク用ガラス基板、液晶表示用ガラス基板、光
ディスク用基板等の基板(以下、単に「基板」とい
う。)に各種液処理を施す基板処理装置に関する。
TECHNICAL FIELD The present invention relates to a semiconductor wafer,
The present invention relates to a substrate processing apparatus that performs various types of liquid processing on a substrate (hereinafter, simply referred to as a “substrate”) such as a glass substrate for a photomask, a glass substrate for a liquid crystal display, and a substrate for an optical disk.

【0002】[0002]

【従来の技術】従来の基板処理装置として、例えば、予
め露光処理してある基板に現像処理を施すための基板現
像装置が存在する。
2. Description of the Related Art As a conventional substrate processing apparatus, for example, there is a substrate developing apparatus for performing a developing process on a substrate which has been exposed in advance.

【0003】このような基板現像装置では、レジスト膜
にチップパターンを露光した基板を吸引チャック上に水
平に吸引保持する。そして、静止状態の基板に対して、
基板上方に配置した基板の直径と同等以上の長さのスリ
ット状の液吐出口を有する現像液供給ノズルから現像液
を吐出させつつ、この現像液供給ノズルをその長手方向
に垂直な方向に一定速度で移動させる。現像液供給ノズ
ルから基板上に吐出された現像液は、その表面張力によ
って基板上に薄い膜状に盛られる。この状態で、一定現
像時間だけ基板の静止状態を維持することによって基板
表面のレジストの現像が進行する。その後、基板を吸引
チャックとともに回転させながら基板上に純水等の洗浄
液を供給してリンスを行い、さらに洗浄液の供給を停止
して回転を継続することで基板を乾燥させている。
In such a substrate developing apparatus, a substrate having a resist film on which a chip pattern is exposed is horizontally held on a suction chuck. Then, for the substrate in the stationary state,
While discharging the developing solution from a developing solution supply nozzle having a slit-shaped liquid discharging port having a length equal to or greater than the diameter of the substrate disposed above the substrate, the developing solution supply nozzle is kept constant in a direction perpendicular to its longitudinal direction. Move at speed. The developer discharged from the developer supply nozzle onto the substrate is formed on the substrate in a thin film by the surface tension. In this state, the development of the resist on the substrate surface proceeds by keeping the substrate stationary for a certain development time. Thereafter, while the substrate is rotated together with the suction chuck, a cleaning liquid such as pure water is supplied onto the substrate to perform rinsing, and further, the supply of the cleaning liquid is stopped and the rotation is continued to dry the substrate.

【0004】なお、基板上に現像液を供給する際には、
現像液供給源から現像液供給ノズルまでに至る配管の中
間部に設けた開閉バルブを、現像液供給ノズルが基板上
方を通過する間だけ開状態として、必要なタイミングで
基板上に現像液の供給が行えるようにしている。
[0004] When supplying the developing solution onto the substrate,
The opening and closing valve provided in the middle part of the pipe from the developer supply source to the developer supply nozzle is opened only while the developer supply nozzle passes above the substrate, and the developer is supplied to the substrate at the required timing. Can be done.

【0005】[0005]

【発明が解決しようとする課題】しかし、上記のような
基板現像装置では、現像液供給ノズルが基板上方の通過
を完了するタイミングで現像液の吐出を停止させる際
に、現像液供給源から開閉バルブにかけての1次側で
は、現像液の供給の流れを直ちに停止させることができ
るが、開閉バルブから現像液供給ノズルにかけての2次
側では、現像液の慣性によって、現像液供給ノズルのス
リット近傍で現像液と外部のエアとが置換されてしまう
場合があった。このようなエアは、現像液供給ノズル内
部に気泡となって滞留し、次に現像液の吐出を開始する
タイミングまでに現像液供給ノズルから抜ききれない場
合も生じる。このように滞留した気泡は、これが基板上
に現像液供給ノズルから吐出されれば、現像液の均一な
吐出パターンがエア周辺で乱れ、基板全面における均一
な液膜の形成が妨げられたり、基板に形成される液膜中
に気泡が混入した状態となったり、或いはエア周辺で現
像液を劣化させることになったりして、結果的にレジス
ト膜上に意図しない現像不良部分が形成されることにな
る。
However, in the substrate developing apparatus as described above, when the discharge of the developer is stopped at the timing when the developer supply nozzle completes the passage above the substrate, the developer is opened and closed by the developer supply source. On the primary side to the valve, the flow of the developer supply can be stopped immediately, but on the secondary side from the opening and closing valve to the developer supply nozzle, due to the inertia of the developer, the vicinity of the slit of the developer supply nozzle In some cases, the developer and the outside air are replaced. Such air may remain as bubbles in the developer supply nozzle, and may not be completely removed from the developer supply nozzle by the next timing when the discharge of the developer is started. If such bubbles are discharged from the developer supply nozzle onto the substrate, the uniform discharge pattern of the developer is disturbed around the air, preventing the formation of a uniform liquid film over the entire surface of the substrate, or Bubbles may be mixed in the liquid film formed on the substrate, or the developer may be deteriorated around the air, resulting in an unintended defective development on the resist film. become.

【0006】そこで、この発明は、基板に現像液等の処
理液を均一に供給して均一な液処理を行うことができる
基板処理装置を提供することを目的とする。
Accordingly, an object of the present invention is to provide a substrate processing apparatus capable of uniformly supplying a processing liquid such as a developing solution to a substrate and performing a uniform liquid processing.

【0007】[0007]

【課題を解決するための手段】上記の目的を達成するた
め、請求項1の基板処理装置は、基板を略水平に保持し
つつ当該基板の上方から処理液を吐出して当該基板に液
処理を行う基板処理装置であって、前記基板上に前記処
理液を供給する処理液供給ノズルと、前記処理液供給ノ
ズルに前記処理液を送液する送液配管と、前記送液配管
の経路中に介在され、前記処理液供給ノズルへの前記処
理液の供給を許容する送液状態と前記処理液供給ノズル
への前記処理液の供給を遮断する非送液状態とに切り換
わる切換手段と、前記切換手段を前記送液状態から前記
非送液状態へ切換速度を制御しつつ切り換えせしむる切
換速度制御手段とを備えたことを特徴とする。
In order to achieve the above object, a substrate processing apparatus according to claim 1 discharges a processing liquid from above the substrate while holding the substrate substantially horizontally, and performs liquid processing on the substrate. A processing liquid supply nozzle for supplying the processing liquid onto the substrate; a liquid supply pipe for supplying the processing liquid to the processing liquid supply nozzle; Switching means interposed between the liquid supply state to allow the supply of the processing liquid to the processing liquid supply nozzle, and a non-liquid supply state to interrupt the supply of the processing liquid to the processing liquid supply nozzle, Switching speed control means for switching the switching means from the liquid sending state to the non-liquid sending state while controlling the switching speed.

【0008】また、請求項2の基板処理装置は、前記切
換手段が、弁の開閉量に応じて前記処理液供給ノズルへ
の送液量を調節可能な開閉バルブであり、前記切換速度
制御手段が、前記開閉バルブの弁を駆動をする電動モー
タを有することを特徴とする。
Further, in the substrate processing apparatus according to the present invention, the switching means is an opening / closing valve capable of adjusting a liquid supply amount to the processing liquid supply nozzle in accordance with an opening / closing amount of the valve, and the switching speed control means. However, it is characterized by having an electric motor for driving the valve of the open / close valve.

【0009】また、請求項3の基板処理装置は、前記電
動モータが、ステッピングモータであることを特徴とす
る。
In a third aspect of the present invention, the electric motor is a stepping motor.

【0010】[0010]

【発明の実施の形態】図1は、本発明に係る基板現像装
置の一実施形態である基板現像装置100の構造を説明
する図である。
FIG. 1 is a view for explaining the structure of a substrate developing apparatus 100 which is an embodiment of the substrate developing apparatus according to the present invention.

【0011】図1に示すように、この基板現像装置10
0は、処理対象である基板Wをセットする基板処理部1
0と、基板処理部10にセットされた基板W上に現像液
を供給する現像液供給部20と、基板処理部10にセッ
トされた基板W上にリンス用の純水を供給する洗浄液供
給部30と、これらの動作を制御する制御手段である制
御部40とを備え、制御部40からの制御によって、外
部から順次供給される基板Wに対し適当なタイミングで
現像処理、リンス処理、及びスピンドライ処理を行う。
As shown in FIG. 1, this substrate developing device 10
0 is a substrate processing unit 1 for setting a substrate W to be processed.
0, a developer supply unit 20 for supplying a developer onto the substrate W set in the substrate processing unit 10, and a cleaning liquid supply unit for supplying pure water for rinsing to the substrate W set in the substrate processing unit 10. 30 and a control unit 40 as control means for controlling these operations. Under the control of the control unit 40, the developing process, the rinsing process, and the spinning process are performed on the substrate W sequentially supplied from the outside at appropriate timing. Perform dry processing.

【0012】基板処理部10は、昇降可能なカップ11
内に基板Wを吸着保持するとともに基板回転モータ12
に連結されて基板Wとともに回転する吸着チャック13
と、基板Wを支持して昇降させるリフタピン14と、現
像液の液盛りに際して基板Wを把持する基板把持部15
と、リフタピン14及び基板把持部15を駆動して昇降
させる昇降駆動モータ16と、カップ11を駆動して昇
降させるカップ昇降部17とを備えている。
The substrate processing unit 10 includes a vertically movable cup 11
The substrate W is sucked and held in the
Chuck 13 which is connected to and rotates with the substrate W
A lifter pin 14 that supports and raises and lowers the substrate W, and a substrate gripper 15 that grips the substrate W when the developer is filled.
And a lifting drive motor 16 for driving and lifting the lifter pins 14 and the substrate gripping section 15 and a cup lifting section 17 for driving and lifting the cup 11.

【0013】現像液供給部20は、現像液供給ノズル2
1をノズル水平駆動部22の駆動によって基板Wに沿っ
て移動させつつ、現像液供給源24からポンプ(図示を
省略)によって送り出される現像液を送液配管28を通
じて現像液供給ノズル21から吐出させることによっ
て、基板W上面に現像液の液盛りを行う。この際、流量
制御部27は、送液配管28の経路中に介在された切換
手段である可変バルブ25の開閉状態を制御して現像液
供給ノズル21からの現像液の吐出状態を制御する。な
お、ノズル昇降駆動部23は、現像液供給ノズル21及
びノズル水平駆動部22を昇降させることが可能で、現
像液の液盛り時以外はそれらを上方に退避させる。
The developer supply section 20 is provided with a developer supply nozzle 2.
While the nozzle 1 is moved along the substrate W by the driving of the nozzle horizontal drive unit 22, the developer supplied from the developer supply source 24 by a pump (not shown) is discharged from the developer supply nozzle 21 through the liquid supply pipe 28. Thus, the developer W is loaded on the upper surface of the substrate W. At this time, the flow control unit 27 controls the open / close state of the variable valve 25 which is a switching means interposed in the path of the liquid feed pipe 28 to control the state of discharge of the developer from the developer supply nozzle 21. Note that the nozzle raising / lowering drive unit 23 can raise / lower the developer supply nozzle 21 and the nozzle horizontal drive unit 22, and retreats them upward except when the developer is filled.

【0014】洗浄液供給部30は、ノズル回転モータ3
2の回転駆動によって、リンスノズル31を回転中の基
板Wの中央位置まで移動させ、洗浄液供給源34から供
給される洗浄液をリンスノズル31先端から基板W上面
に供給して基板Wのリンス処理を行う。なお、ノズル昇
降駆動部33は、リンスノズル31及びノズル回転モー
タ32を昇降させることが可能で、リンス処理時以外は
それらを上方に退避させる。
The cleaning liquid supply unit 30 includes a nozzle rotation motor 3
The rinsing nozzle 31 is moved to the center position of the rotating substrate W by the rotation drive of 2, and the cleaning liquid supplied from the cleaning liquid supply source 34 is supplied from the tip of the rinsing nozzle 31 to the upper surface of the substrate W to perform the rinsing processing of the substrate W. Do. The nozzle lifting drive unit 33 can raise and lower the rinsing nozzle 31 and the nozzle rotation motor 32, and retracts them upward except during the rinsing process.

【0015】制御部40は、基板処理部10に設けた基
板回転モータ12及び昇降駆動モータ16に制御信号を
送ってこれら基板回転モータ12及び昇降駆動モータ1
6をそれぞれ適当なタイミングで動作させる。また、制
御部40は、現像液供給部20に設けたノズル水平駆動
部22、ノズル昇降駆動部23及び流量制御部27に制
御信号を送ってこれらノズル水平駆動部22、ノズル昇
降駆動部23及び流量制御部27をそれぞれ適当なタイ
ミングで動作させる。さらに、制御部40は、洗浄液供
給部30に設けたノズル昇降駆動部33及び洗浄液供給
源34に制御信号を送ってこれらノズル昇降駆動部33
及び洗浄液供給源34をそれぞれ適当なタイミングで動
作させる。
The control unit 40 sends control signals to the substrate rotation motor 12 and the elevation drive motor 16 provided in the substrate processing unit 10 to control the substrate rotation motor 12 and the elevation drive motor 1.
6 are operated at appropriate timing. The control unit 40 also sends control signals to the nozzle horizontal drive unit 22, the nozzle elevating drive unit 23, and the flow rate control unit 27 provided in the developer supply unit 20 to send these control signals to the nozzle horizontal drive unit 22, the nozzle elevating drive unit 23, The flow controller 27 is operated at an appropriate timing. Further, the control unit 40 sends a control signal to the nozzle raising / lowering driving unit 33 and the cleaning liquid supply source 34 provided in the cleaning liquid supply unit 30 to send the nozzle raising / lowering driving unit 33
The cleaning liquid supply source 34 is operated at an appropriate timing.

【0016】現像液供給ノズル21は、スリット状のノ
ズルとなっており、その下端に設けられた基板Wの直径
より長いスリット21aによって、現像液供給源24か
ら可変バルブ25を介して供給される現像液を基板W上
面にカーテン状に吐出する。
The developing solution supply nozzle 21 is a slit-shaped nozzle, and is supplied from a developing solution supply source 24 via a variable valve 25 by a slit 21a provided at the lower end thereof and having a diameter larger than the diameter of the substrate W. The developer is discharged onto the upper surface of the substrate W in a curtain shape.

【0017】ノズル水平駆動部22は、ノズル駆動モー
タ22a、プーリ22b、及びタイミングベルト22c
を備えており、ノズル駆動モータ22aの回転により、
タイミングベルト22cに連結された現像液供給ノズル
21のスリット21aを一定の高さに維持しつつ水平移
動可能となっている。
The nozzle horizontal drive unit 22 includes a nozzle drive motor 22a, a pulley 22b, and a timing belt 22c.
The rotation of the nozzle drive motor 22a provides
The slit 21a of the developer supply nozzle 21 connected to the timing belt 22c can be moved horizontally while maintaining the slit 21a at a constant height.

【0018】可変バルブ25は、これに設けた弁の開閉
量に応じて現像液供給源24から現像液供給ノズル21
への現像液の送液量を調節可能な開閉バルブである。電
動モータ26は、可変バルブ25の弁を駆動するステッ
ピングモータであり、流量制御部27によってデジタル
的に制御される。流量制御部27は、電動モータ26を
介して可変バルブ25を制御して、この可変バルブ25
を現像液供給ノズル21への現像液の供給を許容する送
液状態と現像液供給ノズル21への現像液の供給を遮断
する非送液状態との間で切り換える。さらに、可変バル
ブ25を送液状態から非送液状態に切り換える際には、
その切換速度を制御する。つまり、電動モータ26の動
作速度を調節して可変バルブ25の弁を徐々に開状態か
ら閉状態に切り換える。
The variable valve 25 is connected to the developer supply nozzle 21 from the developer supply source 24 in accordance with the opening / closing amount of a valve provided therein.
The opening / closing valve is capable of adjusting the amount of the developer supplied to the opening / closing valve. The electric motor 26 is a stepping motor that drives a valve of the variable valve 25, and is digitally controlled by the flow control unit 27. The flow control unit 27 controls the variable valve 25 via the electric motor 26,
Is switched between a liquid supply state in which the supply of the developer to the developer supply nozzle 21 is permitted and a non-liquid supply state in which the supply of the developer to the developer supply nozzle 21 is shut off. Further, when switching the variable valve 25 from the liquid sending state to the non-liquid sending state,
The switching speed is controlled. That is, the operating speed of the electric motor 26 is adjusted to gradually switch the valve of the variable valve 25 from the open state to the closed state.

【0019】図1に示す基板現像装置100の動作の概
要について説明する。まず、図示しない外部装置の搬送
アームによって基板処理部10まで搬送してきた基板W
を吸着チャック13上に載置・吸着させて基板Wのセッ
トを完了する。次に、吸着チャック13を吸着解除状態
に切り替え、リフタピン14を上昇させて基板Wを上昇
させる。そして現像液供給ノズル21を基板Wの一端よ
り手前側の位置から、基板Wの他端を通り越した位置ま
で現像液を吐出させつつ基板W上方を移動させて基板W
全面に現像液の液盛りを行う。次に、現像液の液盛りが
終了すると、現像のために一定時間だけ基板Wを静止状
態に維持する。次に、現像が終了すると吸着チャック1
3を吸着状態に切り替えた直後にリフタピン14を降下
させて吸着チャック13上に再び基板Wを吸着保持す
る。なお、それと同時にカップ11を上昇させ、吸着チ
ャック13及び基板Wを一体とした回転を開始する。次
に、リンスノズル31を基板W中央の上方位置に移動さ
せ、洗浄液の供給を開始してリンス処理を開始する。次
に、リンス処理終了後も基板Wの回転を維持してそのま
ま基板Wを回転させて洗浄液を振り切るスピンドライ処
理工程に移る。次に、スピンドライ処理が終了すると基
板Wの回転を停止し、吸着解除状態にする。なお、それ
と同時にカップ11を降下させる。最後に、外部の搬送
アームにより処理の終了した基板Wを搬出し、次の基板
Wが投入されるか、基板処理を終了する。
The outline of the operation of the substrate developing apparatus 100 shown in FIG. 1 will be described. First, the substrate W transported to the substrate processing unit 10 by a transport arm of an external device (not shown).
The substrate W is placed on the suction chuck 13 and sucked to complete the setting of the substrate W. Next, the suction chuck 13 is switched to the suction release state, the lifter pins 14 are raised, and the substrate W is raised. Then, the developer supply nozzle 21 is moved above the substrate W while discharging the developer from a position on the near side of one end of the substrate W to a position beyond the other end of the substrate W to move the substrate W
The entire surface is filled with a developer. Next, when the liquid level of the developing solution is completed, the substrate W is kept stationary for a certain period of time for development. Next, when the development is completed, the suction chuck 1
Immediately after switching 3 to the suction state, the lifter pins 14 are lowered to suction-hold the substrate W on the suction chuck 13 again. At the same time, the cup 11 is raised, and the rotation of the suction chuck 13 and the substrate W is started. Next, the rinsing nozzle 31 is moved to a position above the center of the substrate W, and the supply of the cleaning liquid is started to start the rinsing process. Next, even after the rinsing process is completed, the rotation of the substrate W is maintained while the rotation of the substrate W is maintained, and the process proceeds to a spin dry process in which the cleaning liquid is shaken off. Next, when the spin dry process is completed, the rotation of the substrate W is stopped, and the substrate W is brought into the suction release state. At the same time, the cup 11 is lowered. Finally, the processed substrate W is carried out by the external transfer arm, and the next substrate W is loaded or the substrate processing is completed.

【0020】図2は、現像液の液盛り時における可変バ
ルブ25の動作の詳細を説明する図である。現像液供給
ノズル21が図1に示す退避位置からの移動を開始した
後、現像液供給ノズル21のスリット21aが基板Wの
一端上方に達する時間T1よりも一定時間だけ早い時間
T0で現像液供給源24のポンプの駆動をスタートさ
せ、同時に電動モータ26の動作により可変バルブ25
を瞬時に開放してこれを非送液状態から送液状態に高速
で切り換える。現像液供給ノズル21のスリット21a
が基板Wの他端上方に達した時間T2で、電動モータ2
6の動作速度を調節することにより可変バルブ25を徐
々に閉止して送液状態から非送液状態に漸次切り換え、
現像液供給源24のポンプを停止させる。なお、スリッ
ト21aが基板Wのエッジを通過する時間T1、T2は、
現像液供給ノズル21の位置を検出するセンサ(図示を
省略)の出力に基づいて決定している。以上のように、
可変バルブ25を徐々に閉止することにより、現像液供
給ノズル21から吐出される現像液を徐々に減少させる
ことができ、現像液供給ノズル21のスリット21a近
傍の内側から現像液が慣性で飛び出してしまうことを防
止できる。つまり、現像液の供給停止の際にスリット2
1a近傍において内部の現像液と外部のエアとが置換さ
れて現像液供給ノズル21内に気泡が混入することを防
止でき、現像液の均一な吐出パターンが気泡周辺で乱れ
て基板全面における均一な液膜の形成が妨げられたり、
基板に形成される液膜中に気泡が混入した状態となった
り、あるいは気泡周辺で現像液が劣化したりすることを
防止でき、レジスト膜上に意図しない現像不良部分が形
成されることを予防できる。なお、スリット21aが基
板Wのエッジ上方を通過する時間T1、T2は、現像液供
給ノズル21の位置を検出するセンサ(図示を省略)の
出力に基づいて決定している。
FIG. 2 is a diagram for explaining the details of the operation of the variable valve 25 when the developer is filled. After the developer supply nozzle 21 starts moving from the retracted position shown in FIG. 1, the developer supply is performed at a time T0 which is earlier by a fixed time than the time T1 when the slit 21a of the developer supply nozzle 21 reaches one end above the substrate W. The drive of the pump of the source 24 is started, and at the same time, the operation of the electric motor 26
Is instantaneously released and is switched at high speed from the non-liquid sending state to the liquid sending state. Slit 21a of developer supply nozzle 21
At the time T2 when the motor reaches above the other end of the substrate W, the electric motor 2
6, the variable valve 25 is gradually closed by adjusting the operation speed, and the liquid supply state is gradually switched to the non-liquid supply state.
The pump of the developer supply source 24 is stopped. The times T1, T2 during which the slit 21a passes through the edge of the substrate W are:
The determination is made based on the output of a sensor (not shown) that detects the position of the developer supply nozzle 21. As mentioned above,
By gradually closing the variable valve 25, the developing solution discharged from the developing solution supply nozzle 21 can be gradually reduced, and the developing solution pops out from the inside near the slit 21a of the developing solution supply nozzle 21 by inertia. Can be prevented. That is, when the supply of the developer is stopped, the slit 2
In the vicinity of 1a, the inside developer and the outside air are replaced to prevent bubbles from being mixed into the developer supply nozzle 21, and the uniform discharge pattern of the developer is disturbed around the bubbles and uniform over the entire surface of the substrate. Liquid film formation is hindered,
Prevents bubbles from being mixed into the liquid film formed on the substrate, or prevents the developer from deteriorating around the bubbles, and prevents unintended defective development on the resist film. it can. The times T1 and T2 during which the slit 21a passes above the edge of the substrate W are determined based on the output of a sensor (not shown) for detecting the position of the developer supply nozzle 21.

【0021】可変バルブ25を徐々に閉止する際には、
可変バルブ25の弁の開量を実線のように直線状に減少
させる方法もあるが、一点鎖線で示すように、可変バル
ブ25に設けた弁の開量の減少速度を当初小さくし、そ
の後徐々に開量の減少速度を大きくすることも可能であ
る。
When gradually closing the variable valve 25,
There is also a method of linearly decreasing the opening amount of the variable valve 25 as shown by a solid line. However, as shown by a dashed line, the rate of decrease of the opening amount of the valve provided on the variable valve 25 is initially reduced, and then gradually. It is also possible to increase the rate of decrease of the opening amount.

【0022】以上実施形態に即してこの発明を説明した
が、この発明は上記実施形態に限定されるものではな
い。例えば、上記実施形態では、電動モータ26として
ステッピングモータを用いているが、これをサーボモー
タやスピードコントロールモータに置き換えることも可
能である。
Although the present invention has been described with reference to the embodiment, the present invention is not limited to the above embodiment. For example, in the above embodiment, a stepping motor is used as the electric motor 26, but this can be replaced with a servo motor or a speed control motor.

【0023】また、上記実施形態では、基板現像装置1
00において、現像処理の終了に際して現像液の吐出を
徐々に減少させてスリット21a内にエアが混入するこ
とを防止しているが、レジスト等の塗布処理装置でも上
記の方法を適用できる。つまり、塗布処理装置におい
て、塗布処理の終了に際し、塗布液の吐出速度を上記可
変バルブ25及び電動モータ26と同様の調節機構を用
いて徐々に減少させることにより、塗布液を吐出するス
リットやノズル内にエアが混入して塗布不良が生じるこ
とを防止できる。
In the above embodiment, the substrate developing device 1
At 00, although the discharge of the developing solution is gradually reduced at the end of the developing process to prevent air from being mixed into the slit 21a, the above-described method can be applied to a coating apparatus for a resist or the like. That is, in the coating processing apparatus, at the end of the coating processing, the discharge speed of the coating liquid is gradually reduced by using the same adjustment mechanism as the variable valve 25 and the electric motor 26, so that the slit or the nozzle for discharging the coating liquid is used. It is possible to prevent the occurrence of coating failure due to air being mixed into the inside.

【0024】[0024]

【発明の効果】以上の説明から明らかなように請求項1
の装置では、前記基板上に前記処理液を供給する処理液
供給ノズルと、前記処理液供給ノズルに前記処理液を送
液する送液配管と、前記送液配管の経路中に介在され、
前記処理液供給ノズルへの前記処理液の供給を許容する
送液状態と前記処理液供給ノズルへの前記処理液の供給
を遮断する非送液状態とに切り換わる切換手段と、前記
切換手段を前記送液状態から前記非送液状態へ切換速度
を制御しつつ切り換えせしむる切換速度制御手段とを備
えるので、切換手段を前記送液状態から前記非送液状態
へ徐々に切り換えて、前記処理液供給ノズルから基板側
に吐出される処理液を徐々に減少させることができる。
したがって、前記処理液供給ノズルから基板側に吐出さ
れる処理液の運動量を徐々に減少させることができ、処
理液供給ノズルの吐出口近傍の内側から処理液が慣性で
飛び出してしまうことを予防できるので、処理液供給ノ
ズルの吐出口近傍において内部の処理液と外部のエアと
が置換されて処理液供給ノズル内に気泡が混入すること
を有効に防止できる。
As is apparent from the above description, claim 1
In the apparatus, a processing liquid supply nozzle that supplies the processing liquid on the substrate, a liquid supply pipe that supplies the processing liquid to the processing liquid supply nozzle, and is interposed in a path of the liquid supply pipe,
Switching means for switching between a liquid sending state allowing supply of the processing liquid to the processing liquid supply nozzle and a non-liquid sending state for interrupting the supply of the processing liquid to the processing liquid supply nozzle; and Switching speed control means for switching from the liquid sending state to the non-liquid sending state while controlling the switching speed, so that the switching means is gradually switched from the liquid sending state to the non-liquid sending state, The processing liquid discharged from the processing liquid supply nozzle toward the substrate can be gradually reduced.
Therefore, the momentum of the processing liquid discharged from the processing liquid supply nozzle toward the substrate can be gradually reduced, and it is possible to prevent the processing liquid from jumping out from the inside near the discharge port of the processing liquid supply nozzle by inertia. Therefore, it is possible to effectively prevent the inside of the processing liquid supply nozzle from being replaced with the internal processing liquid and the outside air near the discharge port of the processing liquid supply nozzle, thereby effectively preventing air bubbles from entering the processing liquid supply nozzle.

【0025】また、請求項2の基板処理装置では、前記
切換手段が弁の開閉量に応じて前記処理液供給ノズルへ
の送液量を調節可能な開閉バルブであり、前記切換速度
制御手段が前記開閉バルブの弁を駆動をする電動モータ
を有するので、前記切換手段の状態を簡易に切り換え
て、処理液供給ノズルへの送液量を簡易に調節すること
ができる。
Further, in the substrate processing apparatus according to the second aspect, the switching means is an opening / closing valve capable of adjusting an amount of liquid sent to the processing liquid supply nozzle in accordance with an opening / closing amount of the valve. Since the electric motor for driving the opening / closing valve is provided, the state of the switching means can be easily switched, and the amount of liquid sent to the processing liquid supply nozzle can be easily adjusted.

【0026】また、請求項3の基板処理装置では、前記
電動モータがステッピングモータであるので、開閉バル
ブの弁の駆動量をデジタル的に精密に制御することがで
き、処理液供給ノズル内に気泡が混入することを有効に
防止できる。
Further, in the substrate processing apparatus according to the third aspect, since the electric motor is a stepping motor, the driving amount of the on-off valve can be precisely controlled digitally, and bubbles are generated in the processing liquid supply nozzle. Can be effectively prevented from mixing.

【図面の簡単な説明】[Brief description of the drawings]

【図1】この発明に係る基板処理装置の一実施形態であ
る基板現像装置の構成を説明する図である。
FIG. 1 is a diagram illustrating a configuration of a substrate developing apparatus that is an embodiment of a substrate processing apparatus according to the present invention.

【図2】図1の基板現像装置の動作を説明するグラフで
ある。
FIG. 2 is a graph illustrating an operation of the substrate developing device of FIG.

【符号の説明】[Explanation of symbols]

100 基板処理装置 10 基板処理部 20 現像液供給部 21 現像液供給ノズル 24 現像液供給源 25 可変バルブ 26 電動モータ 27 流量制御部 28 送液配管 30 洗浄液供給部 40 制御部 DESCRIPTION OF SYMBOLS 100 Substrate processing apparatus 10 Substrate processing part 20 Developer supply part 21 Developer supply nozzle 24 Developer supply source 25 Variable valve 26 Electric motor 27 Flow rate control part 28 Liquid supply pipe 30 Cleaning liquid supply part 40 Control part

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 基板を略水平に保持しつつ当該基板の上
方から処理液を吐出して当該基板に液処理を行う基板処
理装置であって、 前記基板上に前記処理液を供給する処理液供給ノズル
と、 前記処理液供給ノズルに前記処理液を送液する送液配管
と、 前記送液配管の経路中に介在され、前記処理液供給ノズ
ルへの前記処理液の供給を許容する送液状態と前記処理
液供給ノズルへの前記処理液の供給を遮断する非送液状
態とに切り換わる切換手段と、 前記切換手段を前記送液状態から前記非送液状態へ切換
速度を制御しつつ切り換えせしむる切換速度制御手段
と、を備えたことを特徴とする基板処理装置。
1. A substrate processing apparatus for performing processing on a substrate by discharging a processing liquid from above the substrate while holding the substrate substantially horizontally, wherein the processing liquid supplies the processing liquid onto the substrate. A supply nozzle; a liquid supply pipe that supplies the processing liquid to the processing liquid supply nozzle; and a liquid supply that is interposed in a path of the liquid supply pipe and allows the supply of the processing liquid to the processing liquid supply nozzle. Switching means for switching between a state and a non-liquid sending state in which the supply of the processing liquid to the processing liquid supply nozzle is interrupted, and controlling a switching speed of the switching means from the liquid sending state to the non-liquid sending state. A substrate processing apparatus, comprising: switching speed control means for switching.
【請求項2】 前記切換手段は、弁の開閉量に応じて前
記処理液供給ノズルへの送液量を調節可能な開閉バルブ
であり、前記切換速度制御手段は、前記開閉バルブの弁
を駆動をする電動モータを有することを特徴とする請求
項1記載の基板処理装置。
2. The switching means is an opening / closing valve capable of adjusting an amount of liquid supplied to the processing liquid supply nozzle in accordance with an opening / closing amount of the valve. The switching speed control means drives a valve of the opening / closing valve. The substrate processing apparatus according to claim 1, further comprising an electric motor that performs the following.
【請求項3】 前記電動モータは、ステッピングモータ
であることを特徴とする請求項2記載の基板処理装置。
3. The substrate processing apparatus according to claim 2, wherein said electric motor is a stepping motor.
JP17400097A 1997-06-30 1997-06-30 Wafer treatment device Pending JPH1119567A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17400097A JPH1119567A (en) 1997-06-30 1997-06-30 Wafer treatment device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17400097A JPH1119567A (en) 1997-06-30 1997-06-30 Wafer treatment device

Publications (1)

Publication Number Publication Date
JPH1119567A true JPH1119567A (en) 1999-01-26

Family

ID=15970903

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17400097A Pending JPH1119567A (en) 1997-06-30 1997-06-30 Wafer treatment device

Country Status (1)

Country Link
JP (1) JPH1119567A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004327781A (en) * 2003-04-25 2004-11-18 Dainippon Screen Mfg Co Ltd Substrate processing equipment
JP2021533554A (en) * 2019-07-09 2021-12-02 セミコン テク グローバル リミテッド Particle monitoring device and method for chemical solution

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004327781A (en) * 2003-04-25 2004-11-18 Dainippon Screen Mfg Co Ltd Substrate processing equipment
JP2021533554A (en) * 2019-07-09 2021-12-02 セミコン テク グローバル リミテッド Particle monitoring device and method for chemical solution

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