JPH11189865A - Electrode structure for vapor deposition, device for vapor deposition, method of vapor deposition and production of organic light emitting element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a vapor deposition film free from defects and excellent in flatness by winding wire meshes made of a high m.p. material in multistage on the periphery of a vapor deposition materia, heating the vapor deposition materia by applying current to the wire mesh to evaporate the vapor deposition material with uniform heating and to prevent the incorporation of impurities by the wire mesh. SOLUTION: Plural pieces of the wire meshes 12 are laminated and wound on the periphery of the vapor deposition 11 and current is applied to the wire meshes 12 through an electrode 13. Then the wire meshes 12 generate heat to uniformly heat the vapor deposition material 11 to effectively sublime and to prevent the scattering of the impurities with the wire mesh. The wire mesh 12 has 10-200 μ mesh size, is preferably made of a material such as W, Ta, Mo, Pt, Ni or the alloy and if necessary an insulating or high resistant shielding plate is mounted to restrict the scattering direction of the vapor deposition material. As the vapor deposition material a material not intimate with the wire mesh, e.g. a sublimable metal, a metal oxide or the like, or a material intimate with the wire mesh, e.g. Mg, Li, In, Ca or the like is used.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to an electrode structure for vapor deposition,
The present invention relates to a vapor deposition apparatus, a vapor deposition method, and a method for manufacturing an organic light emitting element, for example, those used for devices such as semiconductor devices, display devices, and memory device electrical components.

[0002]

2. Description of the Related Art In order to form a vapor-deposited thin film, vapor deposition by a resistance heating method is generally used for both a metal-deposited film and a non-metal-deposited film. The reason is that the apparatus is simple and is possible if a heating power source and a boat for vapor deposition are used. The application range is very wide, and it is a technology that has been industrially established.

On the other hand, in recent years, in addition to the diversification of device types and functions, the demands on reliability of devices have become strict, and the conventional techniques have become insufficient. Taking concrete numerical values as an example, it is required to realize a vapor-deposited film having a thickness of 0.1 μm or less, a large area, and a surface having a flatness of approximately several tens of angstroms and having no defects. . In the conventional deposition method by simple resistance heating, a satisfactory film can be obtained locally, but a satisfactory film can be obtained in a large area because impurities on the surface of the deposition material are scattered and deposited on the substrate surface. Could not be realized. In particular, when a sublimable material is used, since the deposited material scatters in various sizes due to the non-uniform temperature of the deposited portion, a film having a satisfactory surface property cannot be obtained.
And so on.

[0004] The specifications from the device side for the current thin film technology have become very strict. In particular, in a semiconductor device, non-uniformity of a submicron-sized deposition surface in a range of 30 cm is not allowed. The same is required for a display device, for example, a uniform deposition surface of grains having a size of several tens of atoms.

[0005]

In a conventional boat for resistance heating, a part of a plate of a high melting point metal such as tantalum, molybdenum, and tungsten is depressed, a deposition material is put in the depression, and an electric current is supplied to the high melting point metal. Generally, the material is evaporated by flowing heat to evaporate the material. In order to maintain the uniformity of the evaporation, a hole for evaporation is provided in the lid mounted on the upper part, and the target material is deposited only from the hole. If it is still insufficient, a partition is provided between the upper lid and the depression to allow the material to evaporate from the upper hole via the partition, so that the impurities do not scatter directly and adhere to the substrate. And

[0006] In either case of attaching a lid or providing a partition as described above, the vapor deposition material must be regarded as a flow of a small group of vapor deposition materials. Specifically, in both cases, the flow stops. Therefore, in many cases, continuous operation does not occur due to clogging at that portion. In particular, when there are many impurities (including oxides of the material), it is difficult to operate uniformly.

[0007] In order to solve the clogging of the material, the purpose is to enlarge the hole or raise the temperature of the clogged portion to eliminate the clogging and obtain a continuous flow. I want to avoid as much as possible in order to generate other problem factors. Further, with such a method, it is impossible to obtain a completely evaporated film without any defect.

[0008] An example of a method for manufacturing an organic light emitting device manufactured by depositing a Mg metal electrode using a conventional deposition method is as follows. In a conventional deposition method using a boat, evaporation is performed. The oxide of Mg scattered on the organic thin film substrate remains as a black spot that does not emit light, and the black spot further expands, thereby shortening the life of the light emitting element itself. When the number of depositions is repeated, the number of black spots due to Mg oxide further increases. Therefore, prevention is required.

In view of the above-mentioned problems of the conventional vapor deposition method, the present invention prevents impurities from scattering and adhering to a substrate, thereby achieving a surface flatness of 0.1 μm or less. The purpose of the present invention is to provide a vapor deposition electrode structure, a vapor deposition apparatus, a vapor deposition method and a method for producing an organic light emitting device using the same, which are tens of angstroms, have no defects, and can produce a vapor deposition film having a large area. is there.

[0010]

In order to solve the above-mentioned problems, the present invention according to claim 1 comprises a vapor deposition material, and a wire mesh wound around the vapor deposition material, wherein the wire mesh comprises:
An electrode structure for vapor deposition characterized by heating the vapor deposition material when energized.

According to a second aspect of the present invention, there is provided the electrode structure for vapor deposition according to the first aspect, wherein a plurality of the metal meshes are superposed and wound around the vapor deposition material.

According to a third aspect of the present invention, there is provided the electrode structure for vapor deposition according to the first or second aspect, wherein the size of the stitch of the wire mesh is between 10 μm and 200 μm.

According to a fourth aspect of the present invention, the material of the wire mesh is
The electrode structure for vapor deposition according to any one of claims 1 to 3, wherein the electrode structure is any one of tungsten, tantalum, molybdenum, platinum, and nickel, or an alloy of these metals.

According to a fifth aspect of the present invention, in order to limit the scattering direction of the vapor deposition material, a shielding plate having an insulating property or a resistance higher than that of the wire mesh is provided. An electrode structure for vapor deposition according to any one of the above.

According to a sixth aspect of the present invention, there is provided the electrode structure for vapor deposition according to any one of the first to fifth aspects, wherein the vapor deposition material is a material that is incompatible with the material of the wire netting.

According to a seventh aspect of the present invention, the vapor deposition material is any one of a sublimable metal, a metal oxide, a sulfide, a fluoride, an amorphous material, and an organic material. Is an electrode structure for vapor deposition.

The invention according to claim 8 is the electrode structure for vapor deposition according to any one of claims 1 to 5, wherein the vapor deposition material is a material compatible with the material of the wire netting.

According to a ninth aspect of the present invention, the vapor deposition material is any one of magnesium, lithium, indium, and calcium, or an alloy containing at least one of them. It is an electrode structure for vapor deposition of the statement.

According to a tenth aspect of the present invention, the vapor deposition material comprises:
The electrode structure for vapor deposition according to any one of claims 1 to 9, wherein the metal mesh is formed in a wire shape, and the wire mesh is formed integrally with the vapor deposition material to form a wire shape.

The present invention according to claim 11 is an evaporation apparatus comprising the electrode structure for evaporation according to any one of claims 1 to 10, wherein the evaporation material is evaporated on a substrate.

According to a twelfth aspect of the present invention, there is provided the electrode structure for vapor deposition according to the tenth aspect, a feeding means for feeding the electrode structure for vapor deposition, and a winding means for winding the electrode structure for vapor deposition after the vapor deposition. A vapor deposition apparatus, wherein the vapor deposition material is vapor-deposited on a substrate.

According to a thirteenth aspect of the present invention, there is provided an electrode structure for vapor deposition according to any one of the first to tenth aspects.
13. An evaporation method using the evaporation apparatus according to 1 or 12, wherein the evaporation material is evaporated on a substrate by a resistance heating method.

According to a fourteenth aspect of the present invention, when the vapor deposition material is a material compatible with the wire mesh, the vapor deposition material is melted or sublimated to deposit on the wire mesh in advance, and the The vapor deposition is performed by evaporating the vapor deposition material again.
The vapor deposition method described in 1.

According to a fifteenth aspect of the present invention, there is provided a method for manufacturing an organic light emitting device, wherein the vapor deposition method according to the thirteenth or fourteenth aspect is used.

According to a sixteenth aspect of the present invention, the vapor deposition material comprises:
The method according to claim 15, wherein the organic light-emitting device is aluminum quinoline.

That is, an object of the present invention is to replace the conventional resistance heating boat with a wire mesh of a high melting point material as a heating source and to evaporate it while refining it in multiple stages with a wire mesh. The first of the reasons for using wire mesh is that it is possible to use a uniform heating source, and it is possible to avoid unnecessary heating of the material, and the second is to ensure the uniformity of the temperature of the heating source After that, it is possible to have a multi-stage purification effect. Third, it is possible to minimize the gap between the deposition material and the heating source (for the purpose of minimizing the thermal resistance and preventing unnecessary reactions such as oxidation of the surface), This aims at preventing contamination of impurities. Fourth, the operation can be performed continuously by enabling continuous supply of new material.

In particular, when evaporating a material such as a sublimable metal, oxide, or fluoride, the material often adheres to the substrate as a lump, but this lump appears as a defect in the film. Never attach clumps to the substrate.

Usually, the size of such a lump is in the range of 1 micron to several tens of microns. The vapor deposition electrode structure of the present invention aims at preventing the generation of a lump, The purpose is to prevent scattered materials from the evaporation material from directly hitting the substrate by multiplexing the wire mesh because it cannot be removed, and to produce a high-purity evaporation source by causing re-evaporation in the wire mesh portion. Things. Although the relationship between the size of the wire mesh and the number of sheets to be overlapped is experimentally determined, it has been found that most of the flying objects are usually stopped at the first wire mesh portion.

In the present invention, the heater portion is particularly described as a wire mesh. However, the structure of the wire mesh is not limited to a wire mesh in which wires are alternately stacked, and a wire mesh formed by etching a metal plate or punching a hole is equivalent. It has the function of

The key to the effective operation of the electrode structure of the present invention is that the heating electrode has a simple structure and the uniformity of heating of the material is high. In the conventional boat for vapor deposition, it was difficult to uniformly perform the material only by heating the boat, and thus it was found that the vapor deposition material heated carelessly was linked to the defect of the vapor deposition film.
That is, it has been found that uniform heating of the material leads to the formation of a film having few defects.

[0031]

Embodiments of the present invention will be described below with reference to the drawings.

(First Embodiment) First, the first embodiment of the present invention will be described.
An embodiment will be described with reference to the drawings.

FIG. 1 is a perspective view showing an electrode structure for vapor deposition according to the first embodiment of the present invention. In FIG.
Reference numeral 11 denotes a vapor deposition material, 12 denotes a heating wire mesh, and 13 denotes a current-carrying electrode. The electrode structure for vapor deposition in the present embodiment heats the vapor deposition material 11 by supplying electricity to the wire mesh 12 which is wound twice around the rod-shaped vapor deposition material 11 having a circular cross section by the current-carrying electrode 13. .

The material of the wire mesh 12 is, for example, tungsten, tantalum, molybdenum, platinum, nickel, or an alloy of these metals.
Materials that are not compatible with the above materials, such as sublimable metals, metal oxides, sulfides, fluorides, amorphous materials, and organic material materials.

Next, a vapor deposition method using the electrode structure for vapor deposition in the present embodiment will be described.

When the wire net 12 is energized, the vapor deposition material 11 melts and starts evaporating or sublimating. At that time, the evaporation material 11
Is scattered, but is stopped by the wire mesh. Experiments have confirmed that most of the flying objects are stopped at the inner wire mesh. In addition, 1 of wire mesh
Between the first sheet and the second sheet, a product that has melted, evaporated or sublimated accumulates and may be purified again by evaporation or sublimation.

As described above, the vapor deposition method using the vapor deposition electrode structure according to the present embodiment can prevent impurities from scattering and adhering to the substrate. It is possible to produce a large-area deposited film which is thick, has a surface flatness of several tens of angstroms, and has no defects.

In the present embodiment, the vapor deposition material of the present invention has been described as having a rod shape, but the present invention is not limited to this. For example, when the vapor deposition material is metal, the shape of the wire is the easiest to handle, and when it is non-metal, it is easy to handle a granular material that has been processed to some extent by sintering or the like. In the case of a powdery material, it is better to perform a certain amount of pretreatment so that the powdery material does not spill out from the wire mesh. Further, the cross-sectional shape is not limited to a circle, and may have a substantially rectangular cross-section as shown in FIG. 2, for example.

In the present embodiment, the wire mesh of the present invention is wound twice around the vapor deposition material, and is made of tungsten, tantalum, molybdenum, platinum, nickel, or a metal of these metals. Although it was described as an alloy and the size of the mesh of the wire mesh was not particularly described, the material of the wire mesh, the size of the mesh of the wire mesh, the number of superimposed wire meshes, etc., were closely related to the deposition material. Because it is tied, the ease of oxidation of the deposition material,
It is conceivable to determine the quality of heat conduction, taking into account the vapor pressure in vacuum, etc.
By adjusting the number of superimposed sheets, it is possible in most cases to cope with favorable combinations. Also, the fineness of the wire mesh is not always better. Since the material that has been heated and evaporated returns to a solid at the mesh of the wire mesh and evaporates again, the wire mesh that is smaller than necessary quickly becomes clogged and loses the function of the wire mesh. 10 as the finest case
The limit is about a micron, and if the size is smaller than that, it is impossible to perform the function of the wire mesh. Therefore,
The size of the mesh of the wire mesh is preferably selected between 10 microns and 200 microns.

Even if the wire mesh is single or triple or more, although there is a quantitative difference in the effect of preventing the impurities from scattering and adhering to the substrate, the effect is remarkable compared with the conventional method. can get.

As the material used for the wire netting, considering the life of the boat and the contamination of the deposited film with impurities,
It is desirable to use a high melting point material. When the temperature of the deposition material is low, a commonly used material such as stainless steel or nickel can be used.

(Second Embodiment) First, the second embodiment of the present invention
An embodiment will be described. In this embodiment, except for using a material compatible with a wire mesh as a deposition material,
This is the same as the first embodiment described above. Therefore,
In the present embodiment, components that are not particularly described are the same as those in the first embodiment, and components having the same names as those in the first embodiment are described unless otherwise specified.
It has the same function as the first embodiment.

The deposition material of the electrode structure for deposition in the present embodiment is a material compatible with the material of the wire mesh, for example, magnesium, lithium, indium, calcium, or an alloy of these metals.

Next, a vapor deposition method using the electrode structure for vapor deposition in the present embodiment will be described.

When the wire net is energized, the deposition material melts and begins to evaporate or sublime. At this time, the impurities contained in the deposition material try to fly, but are stopped by the wire mesh. Further, the vapor deposition material once melted and evaporated or sublimated is deposited along a wire mesh, and is evaporated or sublimated again from the deposited portion, whereby the purity can be improved in accordance with the number of depositions.

In the above description, the viscosity of the molten material and the degree of conformity thereof determine the size of the wire mesh. If the mesh of the wire mesh is made finer than necessary, clogging occurs and the effect of the wire mesh is reduced.
It must be about 0 microns.

As described above, the vapor deposition method using the vapor deposition electrode structure in this embodiment can prevent impurities from scattering and adhering to the substrate. It is possible to produce a large-area deposited film which is thick, has a surface flatness of several tens of angstroms, and has no defects.

An example of depositing lithium as a low melting point metal will be described below. Lithium is a very reactive material, so when using the conventional method, if unnecessary heating is performed, the surface of the material reacts to form a film that becomes scum on the surface,
Prevents continuous deposition operations. If the temperature of the wire mesh is increased forcibly to remove the scum, the scum of the reactant will be deposited and mixed with the original lithium on the substrate surface, causing defects due to sand-like scattered matter, and the function of the device will be reduced. To lose. Under the same conditions, when the deposition is performed using the deposition electrode structure according to the present embodiment, the power required for heating is reduced by half to one-third, and furthermore, scum of a reaction product that causes a problem on the wire mesh surface is generated. It was confirmed that no sandy product was observed on the substrate.

It should be noted that the material of the wire mesh, the size of the mesh of the wire mesh, the number of superposed wire meshes, and the like are not limited to those described in the present embodiment. Is the same as

(Third Embodiment) Next, a third embodiment of the present invention will be described.
An embodiment will be described with reference to the drawings. This embodiment is the same as the above-described first embodiment except for the shape of the electrode structure for vapor deposition. Therefore, in the present embodiment, components that are not particularly described are assumed to be the same as those in the first embodiment, and constituent members having the same names as those in the first embodiment are given the same reference numerals, Unless otherwise described, it has the same function as the first embodiment.

FIG. 3 is a longitudinal sectional view showing an electrode structure for vapor deposition according to a third embodiment of the present invention. FIG.
, 11 is a deposition material, 12 is a wire mesh for heating,
Numeral 12a indicates an end of the wire net 12. In the electrode structure for vapor deposition in the present embodiment, the wire mesh 12 is wound around the vapor deposition material 11 in a state where the end portion of the wire mesh 12 is left in the longitudinal direction of the rod-shaped vapor deposition material 11 to form an end 12a. ,
By applying a current to the end 12a, the deposition material 11 is heated.

The structure of the electrode for vapor deposition in the present embodiment is as follows.
The present embodiment is directed to a vapor deposition material that is shorter than the vapor deposition electrode structure according to the first embodiment.

According to the vapor deposition method using the vapor deposition electrode structure in this embodiment, it is also possible to prevent impurities from scattering and adhering to the substrate. A large-area deposited film having a flatness of several tens of angstroms and having no defects can be manufactured.

The vapor deposition material according to the second embodiment may be used instead of the vapor deposition material according to the first embodiment.

(Fourth Embodiment) Next, a fourth embodiment of the present invention will be described.
An embodiment will be described with reference to the drawings. The present embodiment is the same as the above-described third embodiment except that a shielding plate for limiting the scattering direction of the evaporation material is provided. Therefore, in the present embodiment, components that are not particularly described are assumed to be the same as those in the third embodiment, and constituent members having the same names as those in the third embodiment are denoted by the same reference numerals, and are not particularly described. Unless otherwise described, it has the same function as the third embodiment.

FIG. 4 is a longitudinal sectional view showing an electrode structure for vapor deposition according to a fourth embodiment of the present invention.
FIG. 9 is a perspective view showing an electrode structure for vapor deposition according to a fourth embodiment of the present invention. 4 and 5, reference numeral 11 denotes a deposition material, 12 denotes a heating wire mesh, 12a denotes an end of the wire mesh 12, and 14 denotes a shielding plate. In the electrode structure for vapor deposition in the present embodiment, the wire mesh 12 is wound around the vapor deposition material 11 in a state where the end portion of the wire mesh 12 is left in the longitudinal direction of the rod-shaped vapor deposition material 11 to form an end 12a. , End 1
By applying a current to 2a, the deposition material 11 is heated,
The shielding plate 14 prevents the evaporated or sublimated evaporation material from dissipating to unnecessary portions. The shielding plate 14 has an insulating property or a higher resistance than a wire mesh.

The structure of the electrode for vapor deposition in the present embodiment is as follows.
In addition to the electrode structure for vapor deposition in the third embodiment, a shield plate having insulating properties or higher resistance than a wire net is provided in order to limit the scattering direction of the vapor deposition material.
Therefore, the deposition method using the electrode structure for vapor deposition in this embodiment can produce a vapor deposition film more efficiently than the vapor deposition method using the electrode structure for vapor deposition in the third embodiment.

The vapor deposition electrode structure in this embodiment has been described as being provided with a shielding plate in addition to the vapor deposition electrode structure in the third embodiment.
In the electrode structure for vapor deposition according to the embodiment or the second embodiment, a shield plate may be provided so as to cover a portion opposite to a vapor deposition target.

(Fifth Embodiment) Next, a fifth embodiment of the present invention will be described.
An embodiment will be described with reference to the drawings. This embodiment relates to a vapor deposition apparatus including the electrode structure for vapor deposition according to the first embodiment or the second embodiment.
Therefore, in this embodiment, the description of the electrode structure for vapor deposition is the same as the electrode structure for vapor deposition in the first embodiment or the second embodiment unless otherwise specified. Constituent members having the same names as those of the electrode structure for vapor deposition in the embodiment or the second embodiment are denoted by the same reference numerals, and unless otherwise specified, the components in the first embodiment or the second embodiment are not described. It has the same function as the electrode structure for vapor deposition.

FIG. 6 is a configuration diagram showing the configuration of a vapor deposition apparatus according to the fifth embodiment of the present invention. In FIG.
Reference numeral 21 denotes a deposition electrode structure having the deposition material 11 and the wire mesh 12 shown in FIG. 1, and reference numeral 22 denotes a winding portion of the used electrode structure. Reference numeral 23 denotes a stock portion of an unused electrode structure, and reference numeral 13 denotes a current-carrying electrode shown in FIG. The electrode structure 12 for vapor deposition has the same rod shape as the electrode structure for vapor deposition in the first embodiment or the second embodiment, but has a longer length. That is, it is a wire-like electrode structure for vapor deposition.

Next, the operation of the vapor deposition apparatus according to the present embodiment will be described.

By rotating the winding part 22 corresponding to the winding means of the present invention and the stock part 23 corresponding to the feeding means of the present invention synchronously in the direction of the arrow in FIG. Is continuously supplied between the current-carrying electrodes 13 and is supplied with electricity. Therefore, even if the vapor-deposited material 11 heated by the wire net 12 is not evaporated or sublimated by the supply of electricity, a new vapor-deposited material 11 is supplied. Continuous vapor deposition becomes possible.

That is, in the conventional method, the deposition material is replenished every batch for the formation of the deposition film,
Although the heating boat was replaced, the use of the vapor deposition apparatus of the present embodiment makes it possible to continuously replenish the vapor deposition material and the wire mesh which is a boat, thereby greatly improving the work efficiency of the vapor deposition process. Leads to.

It should be noted that even in a vapor deposition apparatus such as the vapor deposition apparatus of the present embodiment, which does not include a winding means and a feeding means, any one of the above-described first to fourth embodiments can be used. In the case of the vapor deposition apparatus using the electrode structure for vapor deposition in the above, the same effects as those of the respective embodiments can be obtained.

In this embodiment, the description has been made on the assumption that the electrode structure for vapor deposition in the first embodiment or the second embodiment is used as the electrode structure for vapor deposition. In the case of having a shield plate as in the case of the electrode structure for vapor deposition and using a wire-like electrode structure for vapor deposition, the same effect as in the fourth embodiment can be obtained.

(Sixth Embodiment) Next, a sixth embodiment of the present invention will be described.
An embodiment will be described with reference to the drawings. The present embodiment relates to a method for manufacturing an organic light emitting device using the vapor deposition method in the second embodiment. Therefore, in this embodiment, the description of the electrode structure for vapor deposition and the vapor deposition method is the same as that of the second embodiment unless otherwise specified.

The organic light emitting device is a transparent electrode having a positive electrode,
This is an element that emits light from the organic layer when a minus is applied to the electron injection electrode. FIG. 7 is a sectional view of an organic light emitting device manufactured by using the method for manufacturing an organic light emitting device according to the sixth embodiment of the present invention. 7, reference numeral 31 denotes a glass substrate having a transparent electrode 310 on the surface, 32 denotes an organic layer, and 33 denotes an electron injection electrode. The material of the organic layer 32 is, for example, aluminum quinoline or a material containing the same.

When the electron injection electrode 33 is formed on the organic layer 32, the vapor deposition method of the present invention is used.

The material used for the electron injection electrode 33 must use an active element such as magnesium, calcium, or lithium. These elements are generally deposited by resistance heating using a boat, but it is difficult to obtain a completely defect-free film. Further, the film pressure of the organic layer 32 is 1000
It is an important requirement that the electrode 33 does not affect the organic layer 32 because it is as thin as angstrom. The intrusion of foreign matter during the deposition of the electrode 33 appears as a defect in the organic light emitting device. In the conventional method of manufacturing an electrode by resistance heating, the number of defects on the light emitting surface is about several tens per square millimeter. However, when the method for manufacturing an organic light emitting device in the present embodiment is used, 0.1 to 0.5 It was confirmed that it was possible to reduce the number to one.

Further, when the organic layer 32 is made of a material which sublimates from a solid phase, such as aluminum quinoline, the use of the vapor deposition method of the present invention in forming the organic layer 32 provides a sufficient effect. .

[0071]

As is apparent from the above description, the present invention prevents the impurities from scattering and adhering to the substrate, thereby achieving a film thickness of 0.1 μm or less.
It is possible to provide a vapor deposition electrode structure, a vapor deposition apparatus, a vapor deposition method, and a method for producing an organic light-emitting element using the same, which can produce a large-area vapor-deposited film having a surface flatness of several tens angstroms and having no defects. .

As an effect of prevention, compared with the conventional method, the number of extra particles attached to the substrate is 1/100.
It has been confirmed that it can be reduced to 1/1000.

[Brief description of the drawings]

FIG. 1 is a perspective view showing an electrode structure for vapor deposition in a first embodiment of the present invention.

FIG. 2 is a perspective view showing another example of the shape of the electrode structure for vapor deposition according to the first embodiment of the present invention.

FIG. 3 is a longitudinal sectional view showing a deposition electrode structure according to a third embodiment of the present invention.

FIG. 4 is a longitudinal sectional view showing an electrode structure for vapor deposition according to a fourth embodiment of the present invention.

FIG. 5 is a perspective view showing a vapor deposition electrode structure according to a fourth embodiment of the present invention.

FIG. 6 is a configuration diagram showing a configuration of a vapor deposition apparatus according to a fifth embodiment of the present invention.

FIG. 7 is a cross-sectional view of an organic light emitting device manufactured using a method for manufacturing an organic light emitting device according to a sixth embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 11 Deposition material 12 Wire mesh 13 Current-carrying electrode 14 Shielding plate 21 Deposition electrode structure 22 Winding part of used electrode structure 23 Stock part of unused electrode structure 31 Glass plate 32 Organic layer 33 Electron injection electrode 310 Transparent electrode

Claims (16)

[Claims] 1. An electrode for vapor deposition, comprising: a vapor deposition material; and a wire mesh wound around the vapor deposition material, wherein the wire mesh heats the vapor deposition material when energized. Construction. 2. The electrode structure for vapor deposition according to claim 1, wherein a plurality of the metal meshes are stacked and wound around the vapor deposition material. 3. The electrode structure for vapor deposition according to claim 1, wherein the size of the stitch of the wire mesh is between 10 μm and 200 μm. 4. The material of the wire mesh is selected from the group consisting of tungsten, tantalum, molybdenum, platinum, and nickel;
The electrode structure for vapor deposition according to any one of claims 1 to 3, wherein the electrode structure is an alloy of these metals. 5. The vapor deposition according to claim 1, further comprising a shielding plate having an insulating property or a resistance higher than that of the wire mesh to restrict a scattering direction of the vapor deposition material. Electrode structure. 6. The electrode structure for vapor deposition according to claim 1, wherein the vapor deposition material is a material that is incompatible with the material of the wire netting. 7. The electrode structure for vapor deposition according to claim 6, wherein the vapor deposition material is any one of a sublimable metal, a metal oxide, a sulfide, a fluoride, an amorphous material, and an organic material. 8. The electrode structure for vapor deposition according to claim 1, wherein the vapor deposition material is a material compatible with the material of the wire netting. 9. The electrode structure according to claim 8, wherein the deposition material is any one of magnesium, lithium, indium, and calcium, or an alloy containing at least one of them. . 10. The vapor deposition material is in the form of a wire,
The wire mesh is formed so as to be integrated with the vapor deposition material into a wire shape.
10. The electrode structure for vapor deposition according to any one of 9. 11. An evaporation apparatus comprising the electrode structure for evaporation according to claim 1, wherein said evaporation material is evaporated on a substrate. 12. An electrode structure for vapor deposition according to claim 10, comprising: a feeding means for feeding the electrode structure for vapor deposition; and a winding means for winding the electrode structure for vapor deposition after vapor deposition. An evaporation apparatus characterized by performing evaporation on a substrate. 13. A method of depositing the deposition material on a substrate by a resistance heating method using the electrode structure for vapor deposition according to claim 1 or the vapor deposition device according to claim 11 or 12. A vapor deposition method characterized by the above-mentioned. 14. When the vapor deposition material is a material compatible with the wire netting, the vapor deposition material is melted or sublimated, deposited on the wire net in advance, and the deposited vapor deposition material is re-used. The vapor deposition method according to claim 13, wherein vapor deposition is performed by evaporating. 15. A method for manufacturing an organic light emitting device, comprising using the vapor deposition method according to claim 13. 16. The method according to claim 15, wherein the deposition material is aluminum quinoline.