JPH11186687A - Semiconductor device and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce a mounting space at the time of mounting plural boards mounted with plural electronic parts on a mother board and the manhour in assembly, and efficiently absorb and dissipate heat generated from a power element mounted on each board. SOLUTION: A plurality of ceramic boards 10 where drive transistors 21 having heat generation properties and other electronic parts 22 are mounted are joined collectively with one heat radiating fin 40, and then they are mounted on a mother board 60. Therefore, the heat from the transistor 21, etc., can be absorbed and dissipated efficiently to the side of the heat radiating fin 40, and also the manhour in assembly can be reduced. Furthermore, after plural boards 10 are joined to the heat radiating fin 40, the electronic parts 21 and 22, the wiring pattern, etc., on the plural ceramic boards 10 are collected and packaged by resin adhesive or the like, and it also becomes possible to reduce the manhour in packaging.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which a plurality of substrates on which a plurality of electronic components are mounted are mounted on a motherboard, and a method of manufacturing the same. In particular, heat from a power element can be efficiently radiated. Also, the present invention relates to a semiconductor device capable of reducing the number of assembling steps and the like by adopting a simple mounting structure and a method of manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, as a prior art document relating to a semiconductor device and a method of manufacturing the same, there is Japanese Patent Application Laid-Open No. Hei 8-111575.
The one disclosed in Japanese Patent Application Publication No. HEI 10-203 (1995) is known. In this device, a semiconductor chip itself is directly mounted on a metal substrate, so-called bare chip mounting, and positioning pins provided on the substrate are inserted into holes on the motherboard and assembled, and heat from the power elements is radiated. The technique for is shown.

[0003]

By the way, in the above-mentioned device, if a plurality of boards are required in function, a large number of holes are required on the motherboard to insert the positioning pins of each board. The mounting space of the motherboard is impaired because the holes are formed. Further, when a plurality of substrates are required, there is a problem that the number of steps for assembling the motherboard increases. Furthermore, when a plurality of substrates are required, the substrates themselves have the function of heat radiation fins (heat sinks), but are independent of each other, so that the heat generated from the power elements mounted on each substrate is efficiently absorbed and absorbed. There was a problem that it could not be emitted.

Therefore, the present invention has been made to solve such a problem, and it is possible to reduce the mounting space and the number of assembling steps when mounting a plurality of boards on which a plurality of electronic components are mounted on a motherboard. It is an object of the present invention to provide a semiconductor device capable of efficiently absorbing and dissipating heat generated from a power element mounted on each substrate, and a method of manufacturing the same.

[0005]

According to the semiconductor device of the present invention, a plurality of substrates on which a plurality of electronic components including heat-generating electronic components are mounted are joined together to one heat radiation member. Later mounted on motherboard. Therefore, heat from the heat-generating electronic components mounted on the plurality of substrates can be efficiently absorbed and dissipated to the heat radiating member side, and the number of steps for assembling the motherboard with the plurality of substrates can be reduced. Furthermore, after a plurality of substrates are joined to the heat dissipation member, electronic components, wiring patterns, and the like mounted on the substrates can be packaged together with a resin material or the like, so that the number of package steps can be reduced.

In the semiconductor device according to the second aspect, heat from electronic components having heat generation is conducted to the housing via the heat radiating member. As a result, the housing having a large heat capacity serves as a heat radiating member, so that heat from electronic components having heat generation can be efficiently absorbed and dissipated.

In the semiconductor device according to the third aspect, since the connector member is disposed near the heat radiating member, the distance between the heat-generating electronic components on the plurality of substrates and the connector member can be minimized. . Therefore, a large current from the heat-generating electronic component or the like can efficiently flow to the connector member side.

In the semiconductor device according to the fourth aspect, the direct radiant heat from the heat-generating electronic components mounted on the plurality of substrates is transmitted to the electronic components mounted on the motherboard on the opposite side of the heat radiating member. As a result, it is possible to suppress a rise in the temperature of the entire inside of the housing as a result.

In the semiconductor device according to the fifth aspect, the lead terminals of the plurality of substrates are inserted into the holes formed in the terminal alignment plate, so that the positional relationship of the lead terminals with respect to the hole positions on the motherboard side is compensated. This leads to an effect that the lead terminals of the substrate can be easily mounted in the holes of the motherboard.

In the semiconductor device according to the present invention, since a thick film substrate made of a material having high heat dissipation properties is employed as the plurality of substrates, heat generated from heat-generating electronic components mounted on the plurality of substrates can be obtained. Can be efficiently transmitted to a heat radiating member or the like, and a temperature rise in an electronic component or the like having heat generation can be suppressed.

According to the semiconductor device of the present invention, since a plurality of boards are divided and classified for each control content, for example, necessary boards can be selectively selected according to the control content according to the specifications of the vehicle or the like. What is necessary is just to join to a heat dissipation member. Also, by joining only necessary ones of the plurality of substrates to the heat radiating member, the heat radiating member can be shared, and further, the mother board, the housing, and the like can be shared.

In the semiconductor device according to the present invention, since electronic components having heat generation and a control circuit required for controlling the electronic components are formed on the same substrate, for example, control according to the specification of a vehicle or the like is performed. Since it is possible to easily switch to a compatible model simply by selecting a board corresponding to the content, a common motherboard can be achieved.

According to the method of manufacturing a semiconductor device of the ninth aspect, since the plurality of substrates are integrated by the heat radiating member, the number of steps for assembling the plurality of substrates to the motherboard can be reduced, and the mounting on the plurality of substrates can be achieved. It is possible to efficiently absorb and radiate the heat from the electronic component to the heat radiating member side.

[0014]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below based on examples.

FIG. 1 is a perspective view showing an entire configuration of a semiconductor device according to an embodiment of the present invention, and FIG. 2 is a partial cross-sectional view showing a main part configuration with a case and the like in FIG. 1 omitted. It is. In the following drawings, components having the same configuration or corresponding parts are denoted by the same reference numerals and symbols, and detailed description thereof will be omitted.

Referring to FIG. 1, a semiconductor device 10 of this embodiment is shown.
0, ceramic substrates 10A, 10B, 10C, and 10D having high heat dissipation properties are used as thick film substrates. The plurality of ceramic substrates 10A, 10B, 10C, 1
0D is divided and classified for each control content, as described later. Hereinafter, a plurality of ceramic substrates 10A, 10A
When describing a configuration common to each of B, 10C, and 10D, the description will be made simply by representing the “ceramic substrate 10”.

In FIG. 1 and FIG.
In 0, a drive transistor (power transistor) 21 as a power element having heat generation and other electronic components 22 are mounted. The ceramic substrate 10 is further joined to one radiating fin 40 formed of an aluminum material or the like via a coating agent 45 having a high thermal conductivity in order to absorb and dissipate heat generated in the driving transistor 21. ing.

Lead terminal 31 from ceramic substrate 10
Is inserted into a predetermined hole formed in the motherboard 60 via one terminal arrangement plate 35 having an insulating property, and is soldered. The terminal alignment plate 35 is provided with a plurality of tapered holes 35a corresponding to the arrangement positions of the lead terminals 31 arranged on the ceramic substrate 10. Therefore, by inserting the lead terminals 31 of the ceramic substrate 10 into the holes 35a of the terminal alignment plate 35, the subsequent alignment / holding state of the lead terminals 31 is compensated. Thereby, even if there are a plurality of ceramic substrates 10, the positional relationship between the arrangement positions of the lead terminals 31 and the positions of the mounting holes 60 a on the motherboard 60 side is compensated, and the lead terminals 31 of the ceramic substrate 10 Mounting on the hole 60a becomes easy.

A plurality of ceramic substrates 10 are placed at desired positions at a desired position, for example, a silicon-based coating material 4 having high thermal conductivity.
5, one heat dissipating fin 40 joined by
Are fixed to the motherboard 60 using screws 49. Further, near the periphery of one side of the motherboard 60, the connector 50 is fixed using screws 59, and the lead terminals 51 of the connector 50 are soldered and electrically connected. Motherboard 6 configured in this way
0 is housed in a case 70 made of, for example, an aluminum material or the like having a high thermal conductivity as shown in FIG. 1 and then covered with a cover (not shown) made of an aluminum material or the like and screwed. The semiconductor device 100
Is configured.

At this time, the case 70 of the semiconductor device 100
The protrusions 75 formed on the inner surface of the
Is held in contact with the protruding portions 41 formed at both ends of the fin, heat from the radiation fins 40 is absorbed and dissipated to the case 70 side. The connector 5 fixed to the motherboard 60 housed in the case 70 of the semiconductor device 100
Only the 0 connection terminal side faces the outside from the opening 71 of the case 70.

Here, in the semiconductor device 100 in the configuration of the present embodiment, the radiation fins 40 are arranged in the case 70 in a screen shape substantially in parallel with the connector 50. In other words, the inside of the semiconductor device 100 is electromagnetically shielded by surrounding the case 70 and the cover (not shown) made of an aluminum material or the like, and the opening 71 side with the radiation fins 40 made of the aluminum material or the like. Become.

As described above, the semiconductor device 100 of this embodiment
Are mounted on a plurality of ceramic substrates 10 (10A, 10B, 10C, 10C) on which a plurality of electronic components 21, 22 including a driving transistor 21 as an electronic component having heat generation are mounted.
D), a plurality of ceramic substrates 10 are joined, and a plurality of ceramic substrates 10 are electrically connected to heat radiation fins 40 as one heat radiation member that absorbs and dissipates heat from the electronic components. Ceramic substrate 10
Motherboard 60 for fixing radiation fins 40 integral with
Is provided. That is, a plurality of electronic components 2
The plurality of ceramic substrates 10 on which the components 1 and 22 are mounted are joined together to one heat radiation fin 40, and then mounted on the motherboard 60. Therefore, heat from the drive transistors 21 mounted on the plurality of ceramic substrates 10 can be efficiently absorbed and dissipated to the radiation fins 40, and
The man-hour for assembling the motherboard 60 with the plurality of ceramic substrates 10 can be reduced. Furthermore, after the plurality of ceramic substrates 10 are joined to the heat radiation fins 40, the electronic components 21, 22 and the wiring patterns mounted on the ceramic substrate 10 can be packaged together with a resin material or the like. It is also possible to reduce.

The semiconductor device 100 of this embodiment further includes a case 7 as a housing for housing the motherboard 60.
0, and the projection 75 provided on the case 70 is in contact with or joined to the projection 41 of the radiation fin 40 as a heat radiation member, and the drive transistor 21 as an electronic component having heat generation via the radiation fin 40. Heat from case 70
It conducts heat to the side. That is, heat from the drive transistor 21 is conducted to the case 70 via the heat radiation fins 40. Thereby, the case 70 having a large heat capacity is provided.
Can efficiently absorb and dissipate the heat from the drive transistor 21 as a heat dissipating member.

The semiconductor device 100 of this embodiment is
Further, a connector 50 is provided as a connector member for electrically connecting the motherboard 60 to external wiring, and the connector 50 is disposed adjacent to the heat radiation fins 40 as heat radiation members. In other words, the connector 50 is
By being arranged near 0, the distance between the drive transistor 21 of the ceramic substrate 10 and the connector 50 can be minimized. For this reason, a large current from the drive transistor 21 can efficiently flow to the connector 50 side. When the ceramic substrate 10 is arranged near the connector 50 via the heat radiation fins 40 and other lead components on the motherboard 60 are also arranged near the connector 50, only those areas are subjected to the jet soldering. The portion outside the range can be so-called reflow soldering. Thereby, the size of the land of the surface mount component on the motherboard 60 can be reduced, and the mounting density can be increased.

The semiconductor device 100 of this embodiment further includes a plurality of ceramic substrates 10 (10A, 10B, 10C).
(C, 10D) is provided with one terminal alignment plate 35 having a hole 35a formed therein corresponding to the arrangement of the lead terminals 31 arranged on the mother board 60 via the terminal alignment plate 35. It is a thing to connect. That is, the lead terminals 31 of the plurality of ceramic substrates 10 are
By inserting the lead terminals 31 into the holes 35 a of the fifth mother board 60, the positional relationship of the lead terminals 31 with respect to the positions of the holes 60 a on the motherboard 60 side is compensated, and the lead terminals 31 of the plurality of ceramic substrates 10 are easily mounted in the holes 60 a of the motherboard 60.

The semiconductor device 100 of this embodiment is
A ceramic substrate 10 (10A, 10B, 1), which is mainly used as a thick film substrate made of a material having high heat dissipation, is used as a plurality of substrates.
0C, 10D). Thereby, heat from the drive transistor 21 mounted on the ceramic substrate 10 can be efficiently transmitted to the radiation fins 40 and the like, and a rise in temperature in the drive transistor 21 can be suppressed.

Next, description will be made with reference to FIGS. 3 and 4 showing a state where the plurality of ceramic substrates 10 are joined to the radiation fins 40 in the semiconductor device 100 of this embodiment.

As shown in FIG. 3, the plurality of ceramic substrates 10 include, for example, a ceramic substrate 10A constituting a power supply circuit of the semiconductor device 100, ceramic substrates 10B and 10C constituting a fuel injection circuit, for each control content. Electronic components required for each control circuit are mounted by being divided and classified into ceramic substrates 10D constituting a motor drive circuit for a DC motor or the like in throttle control. These ceramic substrates 10 are joined and arranged at predetermined positions of the radiation fins 40 with the above-mentioned coating material 45.

As described above, since the ceramic substrate 10 is divided and classified for each control content, as shown in FIG. 4, a necessary substrate is selectively radiated according to the control content according to the specification of the vehicle. What is necessary is just to join to the fin 40. 4A shows a four-cylinder internal combustion engine that requires a ceramic substrate 10A having a power supply circuit, ceramic substrates 10B and 10C having a fuel injection circuit, and a ceramic substrate 10D having a motor drive circuit. FIG. 4B shows a case where a ceramic substrate 10A having a power supply circuit and ceramic substrates 10B and 10C having a fuel injection circuit are required, and a ceramic substrate 10D having a motor drive circuit is not required. It can correspond to a cylinder internal combustion engine. That is, the plurality of ceramic substrates 1
0 (10A, 10B, 10C, 10D), by joining only necessary ones to the radiating fins 40, the radiating fins 40 can be shared.
It is also possible to make the case and the case 70 common.

Further, since the ceramic substrate 10 is divided and classified for each control content, as shown in FIG. 4 (c), in order to correspond to a six-cylinder internal combustion engine, a ceramic substrate having a fuel injection circuit is mounted. 10E may be added to FIG. 4A, and the radiation fin 40 'enlarged by the area may be used. In this case, the motherboard 60 and the like have different shapes. In any case, the plurality of ceramic substrates 10 (10A, 10B, 10C, 10D,
10E) is divided and classified for each control content,
Combinations of boards corresponding to control contents according to the specifications of the vehicle can be freely set, and common use of components can be easily achieved.

As described above, the semiconductor device 100 of the present embodiment
Are mounted on a plurality of ceramic substrates 10 (10A, 10B, 10C, 10C) on which a plurality of electronic components 21, 22 including a driving transistor 21 as an electronic component having heat generation are mounted.
D, 10E) and a plurality of ceramic substrates 10,
A heat dissipating fin 40 as one heat dissipating member for absorbing and dissipating heat from the electronic component;
And a motherboard 60 for fixing the plurality of ceramic substrates 10 and the integrated heat dissipation fins 40. The plurality of ceramic substrates 10 are classified according to the control content and the electronic components 21 and 22 are classified. To implement.

That is, since the plurality of ceramic substrates 10 are divided and classified for each control content, it is sufficient that the necessary substrates are selectively bonded to the radiation fins 40 according to the control content according to the specifications of the vehicle. Becomes Further, by joining only necessary ones of the plurality of ceramic substrates 10 to the heat radiation fins 40, the heat radiation fins 40 can be shared, and further, the motherboard 60, the case 70, and the like can be shared. .

Next, the characteristics of the ceramic substrate 10 on which electronic components are mounted in the semiconductor device 100 of the present embodiment will be described with reference to FIG.

On the ceramic substrate 10, a driving transistor 21 as a power element for driving an object to be controlled,
Other electronic components 22 for controlling the drive transistor 21 are mounted to form a predetermined circuit. As described above, since a circuit is formed independently for each control content on the ceramic substrate 10 including the power element,
As described above, the desired ceramic substrate 10 corresponding to the control content according to the specification of the vehicle is selected from the plurality of ceramic substrates.
Is selected and attached to the heat radiation fins 40, it is possible to easily switch to a compatible model and achieve a common motherboard 60.

As described above, the semiconductor device 100 of this embodiment is
Is a power element for driving a control target by a drive transistor 21 as an electronic component having heat generation, and forms a control circuit for controlling the drive transistor 21 on the ceramic substrate 10 on which the drive transistor 21 is mounted. In other words, since the drive transistor 21 and the control circuit required to control the drive transistor 21 are formed on the same ceramic substrate 10, the corresponding model can be easily selected only by selecting the ceramic substrate 10 corresponding to the control content according to the specifications of the vehicle. Since the switching to the motherboard 60 can be performed, the motherboard 60 can be shared.

Next, a modified example of the positional relationship between the radiating fin 40 to which the ceramic substrate 10 is joined and the connector 50 in the semiconductor device 100 according to one embodiment of the present invention by mounting on the motherboard 60 will be described. This will be described with reference to the partial cross-sectional view of FIG. FIG. 6 shows the ceramic substrate 10 joined to the radiating fin 40 in FIG. 2 from the opposite direction and directed toward the connector 50. As for the overall configuration of the semiconductor device 100, a plurality of ceramic substrates 10 are joined. Except for the mounting direction of the radiation fins 40, it is the same as FIG. 1 showing a perspective view of the above-described embodiment, and a detailed description thereof will be omitted.

In FIG. 6, the radiating fins 40 are arranged substantially parallel to the connector 50, and the radiating fins 40 are arranged in a screen. The ceramic substrate 10 includes a drive transistor (power transistor) 21 as a power element having heat generation properties and other electronic components 22 connected to a connector 50.
It is joined to the radiation fin 40 so as to face the side. With such a configuration, radiant heat from the drive transistor 21 and the like mounted on the ceramic substrate 10 is prevented from being radiated to the electronic component 61 mounted on the motherboard 60, and the temperature of the electronic component 61 and the like rises. Can be reduced.

As described above, the semiconductor device 100 of the present embodiment
The heat radiation fins 40 as the heat radiation member are arranged substantially in parallel with the connector 50 as the connector member,
A plurality of ceramic substrates 10 (10A, 10B, 10C,
10D) is disposed on the connector 50 side. As a result, direct radiant heat from the drive transistor 21 and the like mounted on the ceramic substrate 10 is transferred to the electronic component 61 mounted on the motherboard 60 on the opposite side of the radiation fin 40.
As a result, the temperature rise inside the case 70 can be suppressed.

Next, a description will be given with reference to a partial cross-sectional view of FIG. 7 showing a wiring pattern on a surface of a mother board 60 on which the ceramic substrate 10 and the connector 50 are mounted in the semiconductor device 100 according to an embodiment of the present invention. I do.
In FIG. 7, the drive transistor 21 and other electronic components 22 mounted on the ceramic substrate 10 are omitted. In addition, since an insulating film is formed on the upper surface of the wiring pattern of the motherboard 60 in FIG. 7, a wiring pattern portion hidden by the insulating film is indicated by a broken line, and a land portion is indicated by a solid line.

The ceramic substrate 10 in the semiconductor device 100
When the drive transistor 21 mounted on the motherboard 60 is electrically connected to an external control target (for example, a DC motor) via the connector 50, the wiring on the motherboard 60 is generally smaller than the magnitude of the drive current. It is necessary to increase the width of the pattern. Further, it is necessary to secure a gap between the lead terminals 31 provided on the ceramic substrate 10. Therefore, in this embodiment, of the lead terminals 31 from the ceramic substrate 10, only the terminals connected to the connector 50 are bent toward the connector 50, and the other terminals are bent toward the opposite side. Accordingly, the land 65 connecting the ceramic substrate 10 and the land 66 connecting the lead terminal 51 of the connector 50 on the surface of the motherboard 60 can be connected by the wiring pattern 68 as a thick and shortest power (for large current) pattern. Becomes Further, the distance between the lead terminals 31 and 51 can be reduced.

Next, an exploded perspective view of FIG. 8 showing a process of assembling the radiating fins 40 to which the ceramic substrate 10 is bonded to the motherboard 60 in the semiconductor device 100 according to one embodiment of the present invention. I will explain. In addition,
In FIG. 8, the terminal alignment plate 35 for aligning the lead terminals 31 of the ceramic substrate 10 and the case 70 for accommodating the motherboard 60 are omitted.

As shown in FIG. 8, first, a plurality of ceramic substrates 10 on which a plurality of electronic components including heat-generating electronic components are mounted, and radiation fins 40 are bonded by a coating material 45 having a high thermal conductivity. Is done. Thereafter, the lead terminals 3 of the plurality of ceramic substrates 10 integrated with the radiation fins 40 are formed.
1 is inserted into a predetermined hole of the motherboard 60, and the radiation fins 40 are fixed with screws 49. Then, the lead terminals 31 of the plurality of ceramic substrates 10 are electrically connected by being soldered to the land portions of the motherboard 60,
The process of attaching the plurality of ceramic substrates 10 to the motherboard 60 is completed. Thereby, the plurality of ceramic substrates 1
0 can be inserted into the motherboard 60 at one time, so that the assembling time is shortened and the productivity can be improved.

As described above, the semiconductor device 100 of the present embodiment
Is manufactured by mounting a plurality of ceramic substrates 10 (10A, 10B, 10A) on which a plurality of electronic components 21, 22 including a drive transistor 21 as an electronic component having heat generation are mounted.
C, 10D) as radiation fins as one radiation member
And a step of joining the radiating fins 40 joined to the plurality of ceramic substrates 10 to the mother board 60 by using a coating agent 45 as a joining agent having high thermal conductivity. According to such a process procedure, since the plurality of ceramic substrates 10 are integrated by the radiation fins 40, the number of steps for assembling the plurality of ceramic substrates 10 to the motherboard 60 can be reduced, and the plurality of ceramic substrates 10 are mounted on the ceramic substrate 10. Fins 40 that efficiently dissipate the heat from the
Can be absorbed and diverged to the side.

Next, the main part of FIGS. 9 and 10 showing a state in which the radiation fins 40 to which the ceramic substrate 10 is joined in the semiconductor device 100 according to one embodiment of the present invention are assembled to the case 70. Description will be made with reference to a cross-sectional view.

As shown in FIG. 9, a plurality of ceramic substrates 10 on which a plurality of electronic components including electronic components having heat generation properties are mounted are bonded to a radiation fin 40 via a coating material 45. The radiation fins 40 and the case 70
Are fixed by screws 79 while maintaining the contact state. With such a configuration, heat generated by the drive transistor 21 and the like mounted on the ceramic substrate 10 can be efficiently absorbed and dissipated to the case 70 via the ceramic substrate 10, the coating agent 45, and the radiation fins 40. Becomes

In FIG. 10, the heat conductive sheet 46 is interposed between the heat radiation fins 40 and the case 70.
With such a configuration, heat generated by the drive transistor 21 and the like mounted on the ceramic substrate 10 is efficiently transmitted to the case 70 via the ceramic substrate 10, the coating agent 45, the radiating fins 40, and the heat conductive sheet 46. It will be absorbed and diverged. Further, according to this configuration, as shown in FIG. 9, the man-hour for screwing the heat radiation fin 40 and the case 70 is not required, so that the workability at the time of assembly is improved.

As described above, the semiconductor device 100 of this embodiment
Further includes a case 70 as a housing for accommodating the motherboard 60, and the case 70 is in contact with or joined to the heat dissipating fins 40 as the heat dissipating members, and The heat is conducted to the case 70 side. Thereby, the radiation fins 40
Can be more efficiently transmitted to the case 70 side, so that the temperature rise of the electronic components and the like can be further suppressed.

[Brief description of the drawings]

FIG. 1 is a perspective view showing a schematic configuration of a semiconductor device according to an example of an embodiment of the present invention.

FIG. 2 is a partial sectional view showing a configuration of a main part in FIG.

FIG. 3 is an explanatory diagram showing a state in which a plurality of ceramic substrates are joined to radiation fins in a semiconductor device according to an example of an embodiment of the present invention.

FIG. 4 is an explanatory view showing a modification of FIG. 3;

FIG. 5 is an explanatory view showing characteristics of a ceramic substrate on which electronic components are mounted in a semiconductor device according to an example of an embodiment of the present invention.

FIG. 6 is a partial cross-sectional view showing a modification of a main part configuration in a semiconductor device according to one example of an embodiment of the present invention.

FIG. 7 is a partial cross-sectional view showing a wiring pattern on a mother board surface on which a ceramic substrate and a connector are mounted in a semiconductor device according to an example of an embodiment of the present invention.

FIG. 8 is an exploded perspective view showing an assembling process in a semiconductor device according to an example of an embodiment of the present invention.

FIG. 9 is a partial cross-sectional view showing an assembled state of a radiation fin and a case to which a ceramic substrate is joined in a semiconductor device according to an example of an embodiment of the present invention.

FIG. 10 is a partial sectional view showing a modification of FIG. 9;

[Explanation of symbols]

Reference Signs List 10 (10A, 10B, 10C, 10D) Ceramic substrate (plural substrates) 21 Driving transistor (electronic component having heat generation) 31 Lead terminal 35 Terminal alignment plate 40 Radiating fin (radiating member) 45 Coating agent (bonding agent) 50 Connector (connector member) 60 Motherboard 70 Case (housing) 100 Semiconductor device

 ──────────────────────────────────────────────────の Continued on the front page (72) Inventor Yukihide Niimi 1-1-1, Showa-cho, Kariya-shi, Aichi Pref.

Claims (9)

[Claims] A plurality of substrates on which a plurality of electronic components including an electronic component having a heat generating property are mounted; one heat radiation member joining the plurality of substrates and absorbing and dissipating heat from the electronic components; A semiconductor device, comprising: a motherboard that electrically connects the plurality of substrates, and fixes the one heat radiation member integrated with the plurality of substrates. And a housing for accommodating the motherboard, wherein the housing is in contact with or joined to the heat dissipation member, and conducts heat from the electronic component to the housing side via the heat dissipation member. The semiconductor device according to claim 1, wherein: 3. The device according to claim 1, wherein the motherboard further includes a connector member that is electrically connected to an external wiring, and the connector member is disposed adjacent to the heat radiating member. 13. The semiconductor device according to claim 1. 4. The semiconductor device according to claim 3, wherein said heat radiating member is arranged substantially in parallel with said connector member, and said plurality of substrates are arranged on said connector member side. 5. The semiconductor device according to claim 1, further comprising: a terminal alignment plate having holes formed therein corresponding to the arrangement of the lead terminals provided on the plurality of substrates, wherein the lead terminal is provided via the terminal alignment plate. The semiconductor device according to claim 1, wherein the semiconductor device is electrically connected to the motherboard. 6. The semiconductor device according to claim 1, wherein the plurality of substrates are thick film substrates made of a material having a high heat dissipation property. 7. A plurality of substrates on which a plurality of electronic components including an electronic component having a heat generating property are mounted; one heat radiation member joining the plurality of substrates and absorbing and dissipating heat from the electronic components; A motherboard that electrically connects the plurality of substrates and that fixes the one heat radiation member integrated with the plurality of substrates, wherein the plurality of substrates are classified according to control content and the electronic component is provided. A semiconductor device characterized by mounting. 8. The electronic component having heat generation properties is a power element for driving a control target, and a control circuit for controlling the power element is formed on a substrate on which the power element is mounted. Item 8. The semiconductor device according to item 7. 9. A step of joining a plurality of substrates on which a plurality of electronic components including an electronic component having heat generation are mounted to one heat radiation member with a bonding agent having high thermal conductivity; Bonding one heat radiation member to the motherboard.