JPH11186551A - Semiconductor device and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device which enhances heat resistance and is high in reliability. SOLUTION: An amorphous carbon film 105 and a light-proof film 106 are provided in the form of a laminated structure pattern on a first interlayer insulating film 104 covering pixel thin film transistors (TFTs). In this case the amorphous carbon film 105 functions as a heat sink, while the light-proof film 106 functions as a black mask. When the heat sink is provided adjacent to the TFTs in this way, heat resistance can be enhanced.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device (such as a semiconductor circuit or an electro-optical device) formed by combining a plurality of thin film transistors (TFTs) formed on the same substrate and an electronic device on which such a semiconductor device is mounted. Related to the configuration of the device.

[0002] In this specification, the term "semiconductor device" means any device that functions by utilizing semiconductor characteristics. In addition to the above-described semiconductor circuits and electro-optical devices, electronic devices are also used for semiconductor devices. It shall be included in the category.

[0003]

2. Description of the Related Art Recently, a plurality of TFs have been formed on a glass substrate.
Attention has been focused on a liquid crystal display (LCD) in which a pixel matrix circuit and a driving circuit are combined by combining T.
Liquid crystal displays are expected to replace CRTs as next-generation displays.

On the other hand, a liquid crystal display is used as an image display device of a monitor or a projector of a notebook personal computer, but has a characteristic that it is very sensitive to temperature. This is due to the fact that the characteristics of the TFT itself are affected by temperature, and that the liquid crystal changes its characteristics with temperature.

[0005] Therefore, although it is desirable to use the liquid crystal display in an environment with small temperature fluctuations, the liquid crystal display is used in an environment that is very easily exposed to heat.

One of them is self-heating of TFTs constituting a circuit, which is an unavoidable heat source.
A liquid crystal display in which more than one million heat sources locally reaching several hundred degrees Celsius are integrated generates extremely high heat.

Further, the backlight light applied to the liquid crystal display is converted into heat, which can be a large heat source. If the light use efficiency is improved as the external light can be used, a method such as a backlightless method can be adopted, but the current technology has to rely on the backlight.

As described above, even under daily use conditions, a liquid crystal display is often exposed to heat, and it is indispensable to increase the heat resistance to obtain a highly reliable product. ing.

[0009]

SUMMARY OF THE INVENTION According to the present invention, a TFT
Using a heat radiation layer (hereinafter referred to as a heat sink) provided on the same substrate as above, efficiently dissipates heat, prevents deterioration of TFT and liquid crystal material due to heat, and realizes a highly reliable liquid crystal display. Make it an issue.

[0010]

An embodiment of the invention disclosed in this specification is a semiconductor device having a semiconductor circuit including a plurality of TFTs formed on the same substrate, wherein at least a part of the semiconductor circuit is provided. The semiconductor circuit is covered with a light-shielding film provided on the substrate, and an amorphous carbon film is selectively formed in a region shielded by the light-shielding film.

According to another aspect of the present invention, there is provided a semiconductor device having a semiconductor circuit comprising a plurality of TFTs formed on the same substrate, wherein a black mask is provided on the semiconductor circuit so as to shield a predetermined portion from light. Is provided, and the black mask has a stacked structure of a light-shielding film and an amorphous carbon film.

In the above configuration, the predetermined location refers to a region where a TFT and / or an electrode wiring is formed. That is, it means a place that cannot be used as an image display area.

According to another aspect of the invention, there is provided a semiconductor device including a pixel matrix circuit having a plurality of pixel electrodes arranged in a matrix on the same substrate, wherein the pixel electrodes are provided on an insulating film. It is made of a conductive film having reflectivity, and an amorphous carbon film is provided between the insulating film and the pixel electrode.

The present invention provides a structure which is not affected by the transmittance of the amorphous carbon film when using the amorphous carbon film as a heat sink (heat radiation layer). In other words, the arrangement of the heat sink made of the amorphous carbon film is matched with the region shielded by the black mask, wiring, and the like (the region that cannot be used for image display), so that the amorphous carbon film can be used without causing a problem in transmittance. It becomes possible.

The amorphous carbon film used in the present invention is a substance exhibiting intermediate characteristics between diamond and graphite. In this specification, those having characteristics close to diamond are particularly diamond-like carbon (hereinafter, referred to as diamond-like carbon).
DLC) and those having characteristics close to graphite are called graphite-like carbon (GLC).

Note that there is no clear boundary between the DLC film and the GLC film, and the DLC film is generally defined as a thin film mainly composed of carbon or carbon exhibiting physical properties like diamond and mainly composed of sp ³ bonds. I have. In the present invention, it is not necessary to clearly distinguish the amorphous carbon film into the DLC film and the GLC film.
Attention should be paid only when an effect specific to C is expected.

Although these amorphous carbon films have high thermal conductivity, they can be used as heat sinks.
It is known that the transmittance decreases as the film quality approaches the GLC film. Also, DL having a relatively high transmittance
Even with the C film, the transmittance tends to decrease as the film thickness increases.

The present invention is a technique for effectively utilizing such an amorphous carbon film having a low transmittance as a heat sink. That is, by adopting the structure of the present invention, an amorphous carbon film is used as a heat sink in a range of 5 nm to 1 μm (typically 100 to 300 nm, preferably 50 to 100 nm in the case of a DLC film). It becomes possible.

The present invention is also effective for a semiconductor device using a TFT having any structure and characteristics. Note that the effect of the present invention is remarkable when the TFT has high operation performance and self-heating of the TFT is severe.

For example, the present inventors disclosed in Japanese Patent Application Laid-Open No. 9-3122.
Extremely fast operation TFT as disclosed in Japanese Patent Publication No. 60
When this is used in the construction of a semiconductor circuit, the amount of heat generated is also large.

A UMIBOND substrate using a known smart cut method or a SIM using oxygen ion implantation
When a TFT composed of a single-crystal silicon thin film is manufactured using an OX substrate or the like, a TF having a very high operating speed is used.
T is obtained.

As described above, the amount of heat generated increases as the operation speed of the TFT increases, and the thermal deterioration increases. It is easily expected that such problems will become more serious as the performance of liquid crystal displays and the like improves in the future.

The present invention is a very simple and effective means as a countermeasure against such thermal deterioration, and can prevent the TFT and the liquid crystal layer from deteriorating due to heat storage.

Further, in obtaining the above configuration, another configuration of the present invention includes a step of sequentially laminating an amorphous carbon film and a light shielding film on an insulating film formed on a plurality of TFTs; Continuously etching the film to form a pattern in the same shape.

In another aspect of the invention, a step of forming a pattern made of an amorphous carbon film only above the TFT on the insulating film formed on the plurality of TFTs, and a step of covering the amorphous carbon film with Forming a pattern made of a light-shielding film.

According to another aspect of the invention, there is provided a method of manufacturing a semiconductor device including a plurality of pixel TFTs arranged in a matrix on the same substrate, wherein the drain electrode of each of the plurality of pixel TFTs is provided. Forming an opening in an insulating film covering the plurality of pixel TFTs;
Forming a laminated film composed of an amorphous carbon film and a light-shielding film having conductivity by covering the opening;
Wherein the drain electrode and the light-shielding film form an auxiliary capacitor using the amorphous carbon film as a dielectric.

[0027]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The details of the embodiments of the present invention will be described with reference to the following examples.

[0028]

[Embodiment 1] The configuration of this embodiment will be described with reference to FIG. FIG. 1A is a cross-sectional view of a pixel matrix circuit of a transmission type liquid crystal display. However, only the configuration of the substrate on which the TFT is formed (active matrix substrate) will be described.

Reference numeral 101 denotes a substrate having an insulating surface.
02 and 103 are pixels TF forming a pixel matrix circuit
T is shown.

Each of the pixel TFTs 102 and 103 may have a known TFT structure. That is, in the configuration of the present embodiment, the TFT structure itself does not directly affect the effects of the invention, so that any structure TFT can be used.

The pixel TFTs 102 and 103 are covered with a first interlayer insulating film 104, and a black mask is provided thereon. The feature of this embodiment is that this black mask has a laminated structure of an amorphous carbon film 105 and a light shielding film 106.

In this embodiment, the amorphous carbon film 10
5 is a DLC film. When a DLC film is used, its thickness is preferably in the range of 5 to 300 μm (preferably 50 to 100 nm). The detailed film forming method and the film forming apparatus are described in Japanese Patent Publication No. 3-727 by the present inventors.
No. 11, Japanese Patent Publication No. 4-27690, Japanese Patent Publication No. 4-27690
The description is omitted because it is disclosed in Japanese Patent No. 27691.

When forming the DLC film, the thickness is 5 nm.
Below, uniform film formation is difficult, and the effect as a heat sink cannot be expected much. 50 for effective heat dissipation
A film thickness of at least nm is preferred. On the other hand, when the thickness exceeds 300 nm, a large step is formed later, which is not preferable. This is the same when the GLC film is used as the amorphous carbon film.

However, in the case of using a DLC film, it is necessary to consider a problem that the DLC film is extremely hard, and thus, the thicker the film, the more likely it is to break. Therefore, in order to use the DLC film as a heat sink, it is desirable to have a film thickness of about 50 to 100 nm (GLC film).
Such constraints do not need to be taken into account as the film is softer than the DLC film).

The DLC film 105 is almost transparent when the thickness is small, but gradually becomes brown (or yellow) as the thickness increases or approaches the graphite composition, and the transmittance decreases. Therefore, in order to use it as a heat sink of a transmissive liquid crystal display as in this embodiment, it is necessary to selectively form the heat sink in a region not used for image display (light shielding region).

In the present embodiment, such a structure is used for the light shielding film 10.
6 and the DLC film 105 is provided.

As the light-shielding film 106, an organic resin film in which a black pigment or graphite is dispersed (hereinafter referred to as a black resin film) or a thin film which is usually used as a black mask, such as a light-shielding conductive film, is used. Can be. The thickness may be selected in the range of 50 to 200 nm.

The laminated structure as shown in FIG. 1A can be formed by first forming a DLC film and a light-shielding film sequentially, and then successively etching to form a pattern in the same shape. The DLC film 105 can be etched by oxygen plasma, hydrogen plasma, ion milling, or the like.

If the light-shielding film 106 is a black resin film, oxygen plasma etching may be performed. If the light-shielding film 106 is a conductive film having a light-shielding property, etching can be easily performed using a chlorine-based or fluorine-based etching gas.

When a conductive film (typically, a metal film such as titanium, chromium, or aluminum) is used as the light-shielding film 106, the light-shielding film 106 is used as a mask in a self-aligned manner.
Since the pattern formation of the LC film 105 can be performed, it is effective in improving the aperture ratio.

As described above, the DLC film 105 and the light shielding film 1
A black mask having a layered structure with No. 06 is formed. In this embodiment, the lower layer of the black mask is the DLC film 1
05, the function as a heat sink can be added to the function as a black mask.

Here, FIG. 1B shows a partially enlarged pixel matrix circuit having the configuration shown in FIG. 1A. 1
Reference numeral 10 denotes a substrate on which a TFT is formed (TFT is abbreviated), and 104 denotes a first interlayer insulating film.

On the first interlayer insulating film 104, a black mask is formed so as to shield the source wiring, the gate wiring, and the pixel TFT from light. The black mask has a laminated structure of the DLC film 105 and the light shielding film 106.

Further, as shown in FIG. 1A, a black mask is covered with a second interlayer insulating film 107, and a pixel electrode 108 made of a transparent conductive film (typically, ITO) is pattern-formed thereon. Known means may be used for forming the pixel electrode.

At this time, if the light-shielding film 106 is a conductive film, an auxiliary capacitance may be formed between the light-shielding film 106 and the pixel electrode 108. In this case, since the dielectric becomes the second interlayer insulating film, the thickness of the second interlayer insulating film is determined based on a balance between flatness and formation capacitance.

The first interlayer insulating film 104 is formed of the pixel TF
It is preferable to use an organic resin film having high flatness so as to absorb a step of T102 and T103. As the organic resin film, polyimide, polyamide, polyimide amide, and acrylic which can be formed by a spin coating method are preferable.

The amorphous carbon film is very compatible with the organic resin film and has high adhesion. Therefore, the structure in which the DLC film is provided on the organic resin film is also effective for preventing the peeling of the DLC film.

When the present embodiment having the above configuration is implemented, the transmittance of the image display area is reduced by overlapping the DLC film functioning as a heat sink and the light shielding film functioning as a black mask in the same pattern. A heat radiation effect can be obtained effectively without impairment.

When an organic resin film is used as a base of the DLC film 105 (first interlayer insulating film 104), a DLC film can be formed with a high yield.

[Embodiment 2] Although the embodiment 1 has been described focusing on the pixel matrix circuit, the configuration of the embodiment 1 is also used when a black mask is provided on a driver circuit formed integrally with the pixel matrix circuit. It is possible.

When the present invention is implemented including the driver circuit, the cross section of the active matrix substrate is shown in FIG.
The configuration is as shown in FIG.

In FIG. 2, reference numeral 201 denotes a substrate having an insulating surface; 202, an N-channel TFT (NTFT);
Reference numeral 3 denotes a P-channel type TFT (PTFT), which is complementarily combined to form a CMOS circuit.
A driver circuit is configured using the S circuit. Also,
Reference numeral 204 denotes a pixel TFT forming a pixel matrix circuit.

Also in the case of the present embodiment, the black mask for shielding light on the TFT has a laminated structure of the amorphous carbon 205 and the light shielding film 206. Since the driver circuit does not need to consider the aperture ratio unlike the pixel matrix circuit, the entire driver circuit may be covered as shown in FIG.

The individual Ts constituting the driver circuit
A black mask may be provided for each FT. That is, TFT
A configuration may be adopted in which a black mask (including a heat sink) is not provided except for a portion where is disposed.

In particular, when a conductive film is used as the light-shielding film 206, there is a possibility that a parasitic capacitance may be formed between the light-shielding film 206 and the wiring below the light-shielding film 206. The configuration provided is effective.

Further, since the heat source of the driver circuit is mainly the TFT itself, the effect can be obtained if the heat sink (amorphous carbon film) is provided at least on the TFT.

Since the driver circuit needs to operate the TFTs at high speed, the heat generation of each TFT is large. In particular, the configuration of this embodiment is extremely effective when a high-performance TFT as disclosed in Japanese Patent Application Laid-Open No. 9-313260 by the present inventors is used.

[Embodiment 3] In this embodiment, a configuration in which an amorphous carbon film is selectively provided only above pixel TFTs in a pixel matrix circuit will be described with reference to FIG.

FIG. 3 is a partially enlarged view of the pixel matrix circuit. Reference numeral 301 denotes an image display area, and 302 denotes a black mask. The black mask 302 is made of a light-shielding film such as a black resin film or a metal film, and is arranged so as to shield the pixel TFT, the gate wiring, and the source wiring from light.

In the structure of this embodiment, the amorphous carbon film 303 is selectively provided only above the region where the pixel TFT is arranged, and the heat generated from the TFT is released. Therefore, in this embodiment, the light shielding film 302 as a black mask is used.
And an amorphous carbon film 30 as a heat sink
And 3 are formed separately.

When the wiring portion is not provided with a heat sink as described above, a step generated in the wiring portion can be reduced, so that the occurrence of disclination (display defect due to defective alignment of liquid crystal) can be suppressed. Can be.

It is needless to say that the configuration in which an amorphous carbon film is provided on the upper part of each TFT as in this embodiment can be applied to a driver circuit.

[Embodiment 4] In this embodiment, a configuration in which a heat sink using an amorphous carbon film is provided for a reflection type liquid crystal display will be described with reference to FIG.

The reflection type liquid crystal display does not have the concept of the aperture ratio unlike the transmission type liquid crystal display because the pixel electrode is formed of a reflective conductive film (a material mainly composed of aluminum or the like). In other words, a dead space completely below the pixel electrode is a region that can be freely used.

Therefore, it is not necessary to consider the transmittance of the amorphous carbon film when fabricating the reflection type liquid crystal display, so that a structure in which the reflection type liquid crystal display is provided on the entire lower surface of the pixel electrode as shown in FIG. 4 is also possible.

That is, as shown in FIG.
On the first interlayer insulating film 403 formed so as to cover the first and the second masks 402, a black mask 404 made of only a light-shielding film is provided.
Is disposed at a predetermined position, and a second interlayer insulating film 405 is formed so as to cover it.

The second interlayer insulating film 405 is made of D
An organic resin film is preferable in consideration of the adhesion to the LC film and the workability in forming the contact hole.

Then, an amorphous carbon film 406 is formed on the second interlayer insulating film 405. Since there is no need to consider the transmittance, there is no problem even if the film thickness is increased. Therefore,
It can be said that it is preferable to form the film so thick that the film does not peel off and enhance the heat conduction effect. Actually 50-200 nm
(Typically 100 to 150 nm).

After the amorphous carbon film 406 is formed on the second interlayer insulating film 405, a contact hole is formed by patterning. When forming a contact hole, first, an amorphous carbon film 406 is formed.
Is opened by oxygen plasma treatment.

Then, if the second interlayer insulating film 405 is an organic resin film, it is possible to continuously form openings by oxygen plasma treatment until the pixel TFTs 401 and 402 are reached. Of course, when an inorganic film such as a silicon oxide film is used as the second interlayer insulating film, a hydrofluoric acid-based etchant or the like may be used as appropriate.

After the contact holes are formed in this way, a reflective conductive film is formed and patterned to form a pixel electrode 407. As the pixel electrode 407, aluminum having a high surface reflectance or a material mainly containing aluminum is preferable.

As described above, an active matrix substrate having a structure as shown in FIG. 4 is realized. With such a configuration, it is possible to efficiently release heat generated in the active layer of the TFT and release heat due to light absorbed by the pixel electrode.

On the surface of the pixel electrode, a very small part of the incident light (light from the light source) is absorbed without being reflected, and the pixel electrode itself has heat. In the configuration of the present embodiment, by providing an amorphous carbon film in close contact with the pixel electrode that has generated heat in this way, it is possible to prevent heat accumulation in the pixel electrode.

[Embodiment 5] In this embodiment, a configuration in which a black mask having a laminated structure of a light shielding film and an amorphous carbon film is used as an auxiliary capacitor will be described with reference to FIG.

In FIG. 5A, reference numeral 501 denotes a pixel TFT
And a first interlayer insulating film 5 made of an organic resin film thereon.
02 is formed. An opening is provided in the second interlayer insulating film 502 so that the drain electrode 503 is exposed, and the amorphous carbon film 504 and the light shielding film 5 are formed so as to cover the opening.
The pattern of the black mask composed of the pattern 05 is formed.

In this embodiment, since the amorphous carbon film 504 is used as a dielectric of an auxiliary capacitor, a film having high insulating properties is required. Therefore, D
It is preferable to use an LC film.

In this embodiment, it is necessary to use a material having conductivity as the light shielding film 505. Typically, a metal film with low resistivity and low reflectance, such as titanium or chromium, is preferable. In addition, it is also effective to reduce the resistivity by laminating titanium and an aluminum alloy.

After forming the second interlayer insulating film 506, a contact hole is formed to form a pixel electrode 507. Here, if the pixel electrode 507 is a transparent conductive film, a transmissive liquid crystal display is obtained.

The feature of this embodiment having the structure shown in FIG. 5A is that the drain electrode 503 is
Is used as an upper electrode and an auxiliary capacitor 508 is formed using the amorphous carbon film 504 as a dielectric. Therefore, it is preferable that the amorphous carbon film 504 be formed under such conditions that the dielectric constant is as high as possible and the withstand voltage is high.

In the case of a transmission type liquid crystal display, the drain electrode 503 is provided so as to overlap the TFT as shown in FIG. 5A, so that the area for forming the auxiliary capacitance can be increased without sacrificing the aperture ratio. be able to.

On the other hand, a reflection type liquid crystal display (FIG. 5)
In the case of (B)), since the space below the pixel electrode 509 is a dead space, the drain electrode 51 is formed over the entire pixel region.
And an amorphous carbon film 5 is formed thereon.
Then, a black mask having a laminated structure of the light-shielding film 512 and the light-shielding film 512 is formed.

As described above, in the case of the reflection type liquid crystal display, the auxiliary capacitance 513 can be formed by making the most of the pixel area.

As described above, the black mask having the laminated structure of the amorphous carbon film and the light shielding film has not only the function as the black mask and the function as the heat sink but also has the function of forming an auxiliary capacitance. Can be.

[Embodiment 6] In this embodiment, an active matrix substrate having the structure shown in Embodiments 1 to 5 is used and A
An example in which an MLCD is configured will be described. Here, the appearance of the AMLCD of this embodiment is shown in FIG.

In FIG. 6, reference numeral 601 denotes an active matrix substrate on which a pixel matrix circuit 602, a source side drive circuit 603, and a gate side drive circuit 604 are formed. It is preferable that the driving circuit is configured by a CMOS circuit in which NTFT and PTFT are complementarily combined. 605 is a counter substrate.

In the AMLCD shown in FIG. 6, an active matrix substrate 601 and a counter substrate 605 are bonded together with their end faces aligned. However, only a part of the counter substrate 60
5 and remove the FPC (flexible print circuit) 6 from the exposed active matrix substrate.
06 is connected. The FPC 606 transmits an external signal to the inside of the circuit.

Reference numeral 609 denotes a logic circuit basically formed of a CMOS circuit, which is a signal processing circuit for performing processing such as conversion and correction of an image signal. Specifically, A /
It includes a D converter circuit, a γ correction circuit, a memory circuit, and the like.

Of course, the electro-optical device using the present invention is not limited to the configuration shown in FIG. 6, but may have another configuration.

[Embodiment 7] The construction of the present invention is similar to that of the AMLC
In addition to D, the present invention can be applied to various other electro-optical devices and semiconductor circuits.

As an electro-optical device other than AMLCD, E
Examples include an L (electroluminescence) display device and an image sensor.

The semiconductor circuit includes an arithmetic processing circuit such as a microprocessor constituted by an IC chip, and a high-frequency module (MMIC) for handling input / output signals of a portable device.
Etc.).

As described above, the present invention can be applied to all semiconductor devices functioning with a semiconductor circuit composed of TFTs.

[Embodiment 8] The electro-optical devices and semiconductor circuits described in Embodiments 6 and 7 are used as displays of various electronic apparatuses. Note that an electronic device described in this embodiment is defined as a product equipped with an active matrix liquid crystal display device.

Examples of such electronic devices include a video camera, a still camera, a projector, a projection TV, a head-mounted display, a car navigation, a personal computer (including a notebook type), and a portable information terminal (a mobile computer, a mobile phone, etc.). Is mentioned. One example is shown in FIG.

FIG. 7A shows a mobile phone, and a main body 200.
1, audio output unit 2002, audio input unit 2003, display device 2004, operation switch 2005, antenna 2006
It consists of. The present invention can be applied to the audio output unit 2002, the audio input unit 2003, the display device 2004, and the like.

FIG. 7B shows a video camera,
101, display device 2102, audio input unit 2103, operation switch 2104, battery 2105, image receiving unit 210
6. The present invention can be applied to the display device 2102, the sound input unit 2103, and the image receiving unit 2106.

FIG. 7C shows a mobile computer (mobile computer), which includes a main body 2201 and a camera section 2.
202, an image receiving unit 2203, operation switches 2204, and a display device 2205. The present invention is applied to the image receiving section 220.
3. Applicable to the display device 2205 and the like.

FIG. 7D shows a head mounted display, which includes a main body 2301, a display device 2302, and a band 2
303. The present invention can be applied to the display device 2302.

FIG. 7E shows a rear type projector, which includes a main body 2401, a light source 2402, a display device 2403,
Polarizing beam splitter 2404, reflector 240
5, 2406 and a screen 2407. The invention can be applied to the display device 2403.

FIG. 7F shows a front type projector, which includes a main body 2501, a light source 2502, and a display device 250.
3. It comprises an optical system 2504 and a screen 2505. The invention can be applied to the display device 2503.

As described above, the applicable range of the present invention is extremely wide, and can be applied to electronic devices in various fields. In addition, the present invention can be used for an electronic bulletin board, a display for advertising, and the like.

[0102]

By implementing the present invention, the heat generated by the self-heating of the TFT and the irradiation of the backlight is efficiently released to the outside, and the thermal degradation of the TFT and the thermal degradation of the liquid crystal material due to the accumulation of the heat are prevented. Can be prevented.

As a result, it is possible to realize a highly reliable electro-optical device and semiconductor circuit and an electronic apparatus equipped with them.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a configuration of an active matrix substrate.

FIG. 2 is a diagram illustrating a configuration of an active matrix substrate.

FIG. 3 illustrates a structure of a pixel matrix circuit.

FIG. 4 is a diagram showing a configuration of an active matrix substrate.

FIG. 5 is a diagram showing a configuration of an active matrix substrate.

FIG. 6 illustrates a configuration of a liquid crystal display.

FIG. 7 illustrates a structure of an electronic device.

Claims (15)

[Claims] 1. A semiconductor device having a semiconductor circuit including a plurality of TFTs formed on the same substrate, wherein at least a part of the semiconductor circuit is provided on a substrate on which the semiconductor circuit is formed. A semiconductor device, wherein an amorphous carbon film is selectively formed in a region covered with a film and shielded from light by the light-shielding film. 2. The semiconductor device according to claim 1, wherein said amorphous carbon film and said light-shielding film have the same pattern. 3. A semiconductor device having a semiconductor circuit comprising a plurality of TFTs formed on the same substrate, wherein a black mask is provided on the semiconductor circuit so as to shield a predetermined portion from light. A semiconductor device, wherein the black mask has a laminated structure of a light shielding film and an amorphous carbon film. 4. The method according to claim 3, wherein the predetermined location is TF
A semiconductor device characterized by being a region where T and / or electrode wiring is formed. 5. The semiconductor device according to claim 1, wherein the light shielding film is a black resin film or a conductive film. 6. A semiconductor device according to claim 1, wherein said amorphous carbon film is made of carbon mainly containing sp ³ bonds or a material mainly containing carbon. 7. A semiconductor device including a pixel matrix circuit having a plurality of pixel electrodes arranged in a matrix on the same substrate, wherein the pixel electrode is formed of a reflective conductive film provided on an insulating film. A semiconductor device, wherein an amorphous carbon film is provided between the insulating film and the pixel electrode. 8. A semiconductor device including a plurality of pixel TFTs arranged in a matrix on the same substrate, wherein an opening is provided in an interlayer insulating film on the pixel TFTs.
The opening is covered with a laminated film composed of an amorphous carbon film and a light-shielding film having conductivity, and a drain electrode of the pixel TFT and the light-shielding film form an auxiliary capacitance using the amorphous carbon film as a dielectric. A semiconductor device characterized in that: 9. The semiconductor device according to claim 8, wherein the insulating film is an organic resin film made of one or more materials selected from polyimide, polyamide, polyimide amide, and acrylic. 10. The semiconductor device according to claim 8, wherein said amorphous carbon film is made of carbon mainly containing sp ³ bonds or a material mainly containing carbon. 11. A step of sequentially laminating an amorphous carbon film and a light-shielding film on an insulating film formed on a plurality of TFTs, and forming the same shape by continuously etching the amorphous carbon film and the light-shielding film. A method for manufacturing a semiconductor device, comprising: 12. A step of forming a pattern made of an amorphous carbon film only above the TFT on an insulating film formed on a plurality of TFTs, and forming a pattern made of a light shielding film covering the amorphous carbon film. A method for manufacturing a semiconductor device, comprising: 13. A method of manufacturing a semiconductor device including a plurality of pixel TFTs arranged in a matrix on the same substrate, wherein the plurality of pixel TFTs are formed on a drain electrode of each of the plurality of pixel TFTs. Providing an opening in an insulating film covering the TFT; and forming a laminated film comprising an amorphous carbon film and a light-shielding film having conductivity covering the opening, comprising: A method for manufacturing a semiconductor device, comprising forming an auxiliary capacitor using the amorphous carbon film as a dielectric with the light-shielding film. 14. A semiconductor according to claim 11, wherein said insulating film is an organic resin film made of one or more materials selected from polyimide, polyamide, polyimide amide and acrylic. Method for manufacturing the device. 15. The method for manufacturing a semiconductor device according to claim 11, wherein the amorphous carbon film is made of carbon mainly containing sp ³ bonds or a material mainly containing carbon.