JPH11185544A - Evaporating method and evaporating device for orientation-controlled polycrystalline thin film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an evaporating method and an evaporating device for an orientation-controlled polycrystalline thin film, capable of improving a crystal orientation property of a surface of an orientation-controlled polycrystalline thin film without reducing filming efficiency. SOLUTION: An evaporating device for an orientation-controlled polycrystalline the film is made up by providing an evaporating container 40 that can be evacuated, with a target 36, a spatter-beam irradiating device 38 for spattering and accumulating particles composing the target 36 onto a tape- shaped basic material 22 moving near the target 36, an ion gun 39 for irradiating an ion beam to the particles composing the target 36 from a quarter oblique to a filming surface of the basic material 22, and a base-material winding bobbin 25 for winding the base material 22 having an orientation-controlled polycrystalline thin film evaporated thereon. A cover 26 is provided for covering not only the post-evaporation basic material 22 and the wound post-evaporation basic material 22 but also the base-material winding device 25, and a slit is formed in the cover 25 for introducing the post-evaporation tape-shaped basic material 22.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for depositing an orientation-controlled polycrystalline thin film on a tape-shaped substrate, and more particularly to a method and an apparatus for depositing the same. The present invention relates to a method and an apparatus for depositing an orientation-controlling polycrystalline thin film capable of improving the crystal orientation of the surface of the orientation-controlling polycrystalline thin film.

[0002]

2. Description of the Related Art Oxide superconductors discovered in recent years are excellent superconductors having a critical temperature exceeding the temperature of liquid nitrogen. At present, this type of oxide superconductor is a practical superconductor. There are various problems to be solved in order to use this. One of the problems is that the critical current density of the oxide superconductor is low. The problem that the critical current density of the oxide superconductor is low is largely attributable to the existence of electrical anisotropy in the crystal itself of the oxide superconductor. Although it is easy to conduct electricity in the a-axis direction and the b-axis direction,
It is known that it is difficult to conduct electricity in the axial direction. From such a viewpoint, in order to form an oxide superconductor on a base material and use it as a superconductor, an oxide superconductor having a good crystal orientation is formed on the base material, and It is necessary to orient the a-axis or b-axis of the crystal of the oxide superconductor in the direction in which electricity is to flow, and to orient the c-axis of the oxide superconductor in the other direction.

In order to use an oxide superconductor as a conductor, it is necessary to form an oxide superconducting layer having good crystal orientation on a long base material such as a tape.
However, if an oxide superconducting layer is formed directly on a base material such as a metal tape, the metal tape itself is polycrystalline and its crystal structure is significantly different from that of the oxide superconductor. Layers cannot be formed at all. Moreover, the heat treatment performed when forming the oxide superconducting layer causes a diffusion reaction between the metal tape and the oxide superconducting layer, so that the crystal structure of the oxide superconducting layer collapses,
There is a problem that superconductivity is deteriorated. Therefore, the present inventors formed a polycrystalline intermediate thin film such as yttrium-stabilized zirconia (YSZ) on a base material made of a metal tape such as Hastelloy tape, and formed an oxide superconductor on the polycrystalline intermediate thin film. Among them, the critical temperature is about 90K, and Y is excellent in stability and can be used in liquid nitrogen (77K).
Various attempts have been made to produce a superconducting conductor having excellent superconducting properties by forming a ₁ Ba ₂ Cu ₃ Ox-based superconducting layer. Among these attempts, the present inventors have previously proposed a method for forming an intermediate thin film having excellent crystal orientation or obtaining a superconducting tape having excellent superconducting properties in Japanese Patent Application No. Hei.
Patent applications have been filed in Japanese Patent Application Nos. 1-12,836, 3-126837, 3-205551, 4-134443, and 4-293364.

According to the techniques described in these patent applications, when a polycrystalline intermediate thin film is formed on a tape-like base material such as a Hastelloy tape by a sputtering apparatus, the surface of the base film is obliquely formed simultaneously with sputtering. A polycrystalline intermediate thin film having excellent crystal orientation can be formed by a method of forming an intermediate polycrystalline thin film while irradiating an ion beam from a direction (ion beam assisted sputtering method). According to this method, the angle (grain boundary tilt angle) between the a-axis or the b-axis of each crystal lattice of a number of crystal grains forming the polycrystalline intermediate thin film can be made equal to or less than 30 degrees, and the crystal orientation An excellent polycrystalline intermediate thin film can be formed. Further, if a YBaCuO-based superconducting layer is formed on the polycrystalline intermediate thin film having excellent orientation by a laser vapor deposition method or the like, the crystal orientation of the oxide superconducting layer also becomes excellent. An oxide superconducting layer having excellent crystal orientation and having a critical current density as high as 10 ⁵ A / cm ² or more at 77 K can be formed.

FIG. 4 is a schematic structural view showing an example of a conventional apparatus for depositing an orientation-controlled polycrystalline thin film used in the above-mentioned ion beam assisted sputtering method. The deposition apparatus for the orientation control polycrystalline thin film has a configuration in which an ion gun for ion beam assist is provided in an ion beam sputtering apparatus.
And a substrate 2 for heating the substrate.
A substrate feeding bobbin 4 for feeding the substrate, a substrate winding bobbin 5 for winding the substrate 2 on which the orientation control polycrystalline intermediate thin film is formed on the substrate holder 3, and a diagonally above the substrate holder 3. A target 6 disposed oppositely and having the same composition as the orientation-controlling polycrystalline intermediate thin film having a desired composition; a sputter beam irradiation device 8 disposed obliquely above the target 6 toward the lower surface of the target 6; The ion gun 7, which is disposed to face the side of the holder 3 and is spaced apart from the target 6, is housed in a vacuum processing container 10 capable of being evacuated. The ion gun 7 is opposed to the ion gun 7 with its central axis S inclined with respect to the film-forming surface of the substrate 2 at an incident angle θ (an angle between a perpendicular (normal) of the substrate 2 and the central axis S). As a result, the ion beam is incident on the deposition surface of the substrate 2 at an incident angle θ.
Irradiation is possible.

[0006]

In the case where an orientation-controlling polycrystalline intermediate thin film is formed on the substrate 2 using a conventional orientation-controlling polycrystalline thin film deposition apparatus, the crystal orientation of the polycrystalline intermediate thin film is reduced. Can be controlled by the incident angle θ of the ion beam with respect to the base material 2, but since the optimum irradiation area (optimum deposition area) of the ion beam is limited, the tape-shaped base material located outside the optimum irradiation area 2. The polycrystalline intermediate thin film deposited on 2 has poor crystal orientation,
Therefore, when an oxide superconducting layer is formed on such a polycrystalline intermediate thin film having a poor crystal orientation, the crystal orientation of the oxide superconducting layer deteriorates, and as a result, the superconducting properties of the resulting oxide superconducting conductor deteriorate. There was a problem of doing it. Therefore, in order to solve such a problem, a plate-shaped mask 11 is arranged between the tape-shaped substrate 2 and the ion gun 7 to orient the surface of the tape-shaped substrate 2 located in the optimum irradiation area. A control polycrystalline intermediate thin film was deposited.

However, even if the mask 11 as described above is provided, the effect of improving the crystal orientation is insufficient, and the constituent particles of the target 6 diffused in a vacuum in the vapor deposition processing vessel 10 may cause the substrate winding bobbin. On the 5th side, it adheres to the surface of the orientation-controlling polycrystalline intermediate thin film on the base material 2, and the outermost surface of the orientation-controlling polycrystalline intermediate thin film is covered with a thin film having poor crystal orientation, and therefore this crystal orientation is poor. There was dissatisfaction with the superconducting properties of the oxide superconducting conductor obtained by forming the oxide superconducting layer on the thin film. Further, a method of forming a film while removing such a thin film having poor crystal orientation with an ion beam has been considered, but there was a problem that the film formation efficiency was greatly reduced.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide an orientation control polycrystalline thin film capable of improving the crystal orientation on the surface of the orientation control polycrystalline thin film without lowering the film forming efficiency. An object of the present invention is to provide a vapor deposition method and an apparatus for depositing an orientation-controlled polycrystalline thin film that can be suitably used for carrying out the method.

[0009]

According to the first aspect of the present invention,
The constituent particles of the target generated from the target provided in the evaporation processing container capable of being evacuated are sequentially deposited on the tape-shaped substrate moving in the vicinity of the target, and ions are formed obliquely from the film forming surface of the substrate. In a method for depositing an orientation control polycrystalline thin film, the orientation control polycrystal thin film is deposited by sequentially irradiating an ion beam and irradiating an ion beam with the ion beam. Means for solving the above problems are a method for depositing an orientation control polycrystalline thin film, which comprises a step of winding up while covering the periphery of a tape-shaped substrate on which the orientation control polycrystalline thin film is deposited while depositing the thin film. did.

Further, the invention according to claim 2 provides a target, a sputter means for sputtering the constituent particles of the target and depositing it on a tape-shaped substrate moving near the target, and the tape-shaped base. An ion gun that irradiates the constituent particles of the target being deposited on the material with an ion beam from an oblique direction of the substrate deposition surface, and a substrate winding device that winds a tape-like substrate on which an orientation control polycrystalline thin film is deposited In a vapor deposition apparatus for orientation control polycrystalline thin film that is provided in a vacuum processing container capable of vacuum evacuation, a tape-shaped substrate after vapor deposition,
A cover is provided for covering the tape-shaped base material after evaporation wound by the base material winding device together with the base material winding device, and the tape-shaped base material after evaporation is introduced into the cover. The object of the present invention is to provide an apparatus for depositing an orientation control polycrystalline thin film, characterized in that a slit for forming the same is formed.

[0011]

BEST MODE FOR CARRYING OUT THE INVENTION In the following, in a method for producing an oxide superconducting conductor, a method for depositing an orientation-controlled polycrystalline thin film according to the present invention will be described. A method for depositing a thin film and an embodiment applied to a deposition apparatus used for the method will be described. FIG. 1 is a schematic configuration diagram showing one embodiment of an orientation control polycrystalline thin film deposition apparatus of the present invention. The apparatus for depositing an orientation-controlled polycrystalline thin film according to this embodiment includes a substrate holder 23 that supports the tape-shaped substrate 22 and can be heated to a desired temperature, and a tape-shaped substrate 22 on the substrate holder 23. Feeding bobbin (substrate feeding device) 24 for feeding the substrate and a substrate winding bobbin for winding a tape-shaped substrate 22 on which an orientation control polycrystalline intermediate thin film (orientation control polycrystalline thin film) is formed. (Substrate winding device) 25 and tape-shaped substrate 2 after vapor deposition
2 and a cover 26 for covering the tape-shaped base material 22 after evaporation wound up by the base material winding device 25 together with the base material winding device 25, and a predetermined interval diagonally above the base material holder 23. A plate-like target 36 disposed oppositely, a sputter beam irradiator (sputtering means) 38 disposed obliquely above the target 36 toward the lower surface of the target 36, and a predetermined distance beside the substrate holder 23. The ion gun 39, which is opposed to the target 36 and is spaced apart from the target 36, is housed in a vacuum processing container 40 capable of being evacuated.

The substrate holder 23 is provided with a heater therein so that the tape-shaped substrate 22 sent out onto the substrate holder 23 can be heated to a desired temperature as required. The substrate holder 23 is rotatably attached to the support 23a by a pin or the like so that the inclination angle can be adjusted. Such a substrate holder 23
Is disposed in an optimum irradiation area (optimum evaporation area) of the ion beam irradiated from the ion gun 39 in the evaporation processing container 40. As a constituent material of the tape-shaped base material 22,
A long metal tape appropriately selected from various metal materials such as stainless steel, copper, or various alloys such as nickel alloys such as Hastelloy can be used.

In the vapor deposition device of this embodiment, the tape-shaped substrate 22 is continuously fed from the substrate delivery bobbin 24 onto the substrate holder 23, and the orientation-controlled polycrystalline intermediate thin film is deposited in the optimum irradiation region. By winding the base material 2 thus wound by the base material winding bobbin 25, a continuous film can be formed on the base material 22. This substrate winding bobbin 25
Are arranged outside the optimum irradiation area. The substrate winding bobbin 25 and the tape-shaped substrate 22 after evaporation wound thereon are covered with a cover 26.

As shown in FIG. 2, the cover 26 has a slit 27 for introducing the vapor-deposited tape-like base material 22 led out of the optimum irradiation area to outside this area. The structure is such that the base material 22 wound around the bobbin 25 can be taken out. As a material of the cover 26, it is preferable to use a material that does not react with constituent particles of the target 36 described later, and examples thereof include stainless steel and an aluminum alloy. The shape of the slit 27 is substantially the same as the outline of the outer shape of the tape-shaped base material 22 after the vapor deposition to be introduced. It is preferable that the gap formed between the substrate 22 and the substrate 22 is as small as possible. If the gap between the slit 27 and the tape-shaped base material 22 after the vapor deposition is too large, the constituent particles of the target 26 that diffuse into the vacuum in the vapor deposition processing container 40 will cover the cover 2 from the gap.
6, and adheres to the surface of the orientation-controlling polycrystalline intermediate thin film formed on the base material 22, and the crystal orientation of the outermost surface of the orientation-controlling polycrystalline intermediate thin film deteriorates. The disposition position of such a cover 26 is immediately after the optimum irradiation area (immediately after the base material holder 23) so that the tape-like base material 22 after deposition led out of the optimum irradiation area can be immediately covered. It is preferable to dispose it at a position where the slit 27 opens.

The target 36 is for forming a target orientation-controlling polycrystalline intermediate thin film, and has the same composition or a similar composition as the target orientation-controlling polycrystalline intermediate thin film. Specifically, zirconia (YSZ) stabilized with MgO or Y ₂ O ₃ , MgO, SrTiO _3, or the like is used as the target 36, but the present invention is not limited to this, and is suitable for the orientation control polycrystalline intermediate thin film to be formed. A target may be used as appropriate. Such a target 36 is rotatably attached to a target support 36a by a pin or the like, so that the tilt angle can be adjusted.

The sputter beam irradiator (sputtering means) 38 is configured such that an evaporation source is housed in a container and an extraction electrode is provided near the evaporation source. By irradiating the beam, constituent particles of the target 36 can be beaten toward the base material 22.

The ion gun 39 has substantially the same configuration as that of the sputter beam irradiation device 38. The ion gun 39 accommodates an evaporation source inside a container, and has an extraction electrode near the evaporation source. Then, a part of the atoms or molecules generated from the evaporation source is ionized, and the ionized particles are controlled by an electric field generated by an extraction electrode and irradiated as an ion beam. There are various methods for ionizing particles, such as a DC discharge method, a high-frequency excitation method, a filament method, and a cluster ion beam method. The filament type is a method in which a tungsten filament is energized and heated to generate thermoelectrons, which are collided with evaporated particles in a high vacuum to be ionized. In the cluster ion beam method, clusters of aggregated molecules coming out of vacuum from a nozzle provided at an opening of a crucible containing raw materials are bombarded with thermal electrons to be ionized and emitted. In the vapor deposition apparatus of this embodiment, an ion gun 39 having the internal structure shown in FIG. 3 is used. The ion gun 39 includes an extraction electrode 46 and a filament 47 inside a cylindrical container 45.
And an introduction pipe 48 for Ar gas or the like, and can irradiate ions from the tip of the container 45 in a beam shape in parallel.

The ion gun 39 is, as shown in FIG.
The center axis S is set to the incident angle θ with respect to the film forming surface of the base material 22.
(The angle between the perpendicular (normal) of the substrate 22 and the center line S)
Thus, they face each other at an angle. This incident angle θ is 5
The range of 0 to 60 degrees is preferable, but the range of 55 to 60 degrees is preferable.
Most preferred. Therefore, the ion gun 39 forms the
Ion beam can be irradiated at an incident angle θ to the surface
It is arranged so that. The ion gun 39
Therefore, the ion beam applied to the base material 22 is He ⁺, N
e⁺, Ar⁺, Xe⁺, Kr⁺Noble gas ionbee
Or a mixed ion beam of them and oxygen ions
And so on. However, the orientation-controlled polycrystal to be formed
In order to adjust the crystal structure of the intermediate thin film,
It is necessary to have a sufficient amount, and it is not effective with ions that are too light.
Considering that⁺, Kr⁺Use ions such as
Is preferred.

Further, a rotary pump 51 and a cryopump 52 for bringing the inside of the container 40 into a low pressure state such as a vacuum, and an atmosphere gas supply source 53 such as a gas cylinder are connected to the evaporation processing container 40, respectively. ,
The inside of the vapor deposition processing container 40 can be set to a low pressure state such as a vacuum and an argon gas or other inert gas atmosphere or an inert gas atmosphere containing oxygen. Further, the evaporation processing container 40 includes:
A current density measuring device 54 for measuring the current density of the ion beam in the container 40 and a pressure gauge 55 for measuring the pressure in the container 40 are attached. In the vapor deposition apparatus of this embodiment, the tilt angle can be adjusted by rotatably attaching the substrate holder 23 to the support 23a with a pin or the like. The angle of inclination of 39 may be adjusted to adjust the angle of incidence of the ion beam, and the angle adjusting mechanism is not limited to this example, and it is needless to say that various configurations can be employed. It is.

Next, a case where an YSZ orientation-controlling polycrystalline intermediate thin film is formed on the tape-like base material 22 by using the vapor deposition apparatus having the above structure will be described. In order to form an orientation control polycrystalline intermediate thin film (orientation control polycrystalline thin film) on the tape-like base material 22, a target 36 made of YSZ is used, the base material holder 23 is arranged in the optimum irradiation area, and the inclination angle is adjusted. The adjusted ion beam emitted from the ion gun 39 is applied to the film-forming surface of the base material 22 which has been moved onto the base material holder 23.
Irradiation can be performed at an angle in the range of 0 to 60 degrees. Further, the base material delivery device 24 on which the tape-shaped base material 22 is wound is disposed in the evaporation processing container 40, while the evaporation processing container 40
The slit 27 is provided immediately after the optimum irradiation area (immediately after the base material holder 23) so as to be able to immediately cover the tape-shaped base material 22 after deposition, which is led out of the optimum irradiation area, outside the optimum irradiation area. The base material winding bobbin 25 is accommodated in the cover 26, and the tape-shaped base material 22 is transferred from the base material delivery bobbin 24 to the base material holder 23.
It is set so that it can be continuously fed up and then wound up by the substrate winding bobbin 25 in the cover 26. Next, the inside of the evaporation processing container 40 is evacuated to a reduced pressure atmosphere.
Then, the ion gun 39 and the sputter beam irradiation device 38
Activate

When the target 36 is irradiated with an ion beam from the sputtering beam irradiation device 38, the constituent particles of the target 36 are beaten out and fly over the substrate 22. Then, the constituent particles struck out of the target 36 are deposited on the base material 22 sent out onto the base material holder 23 located in the optimum irradiation area, and at the same time, a mixed ion beam of Ar ions and oxygen ions is irradiated from the ion gun 39. To deposit a polycrystalline intermediate thin film having a desired thickness in the desired direction, and then introduce the tape-shaped base material 22 after evaporation sent out of the optimum irradiation region to the outside of the region through the slit 27 into the cover 26. It is wound around the winding bobbin 25.

Here, the incident angle θ at the time of ion irradiation is
A range of 50 to 60 degrees is preferred, and a range of 55 to 60 degrees is most preferred. If θ is 90 degrees, the c-axis of the polycrystalline intermediate thin film is oriented at right angles to the film-forming surface on the substrate 22, but the (111) plane stands on the film-forming surface of the substrate 22. Not preferred. When θ is 30 degrees, the polycrystalline intermediate thin film does not even have c-axis orientation. If the ion beam is irradiated at an angle in the preferable range as described above, the (100) plane of the crystal of the polycrystalline intermediate thin film stands. By performing sputtering while performing ion beam irradiation at such an incident angle, the YSZ
A) and b axis of the crystal axis of the polycrystalline intermediate thin film can be oriented, but this is because the sputter particles being deposited are irradiated with an ion beam at an appropriate angle. It seems to be.

In the above-described method for depositing the orientation-controlling polycrystalline intermediate thin film, the constituent particles of the target 36 are sequentially deposited on the tape-like base material 22 and irradiated with an ion beam to form the orientation-controlling polycrystalline intermediate thin film. Since the thin film is deposited and wound up while covering the tape-shaped substrate 22 on which the orientation control polycrystalline intermediate thin film is deposited, the target 36 diffused in a vacuum in the deposition processing container 40. Is hardly attached to the surface of the orientation controlling polycrystalline intermediate thin film formed on the substrate 22 on the substrate winding bobbin 25 side, and the crystal orientation is attached to the outermost surface of the orientation controlling polycrystalline intermediate thin film. A thin film having poor properties can be significantly reduced to a practically negligible level.
Therefore, when an oxide superconducting layer is formed on an orientation-controlling polycrystalline intermediate thin film having little crystal adhesion with poor crystal orientation and excellent crystal orientation on the outermost surface, the oxide superconducting layer also has crystal orientation. The superconductivity of the obtained oxide superconducting conductor can be improved.

[0024]

(Embodiment) Using a deposition apparatus for an orientation-controlling polycrystalline thin film having the structure shown in FIG. 1, a substrate feeding device wound with a tape-shaped substrate was disposed in a deposition processing container. A cover is arranged so that a slit is opened immediately after the base material holder so that the tape-shaped base material after vapor deposition can be immediately covered, and a base material winding bobbin is stored in the cover, and the base material is sent out. The tape-shaped substrate was continuously fed from the bobbin onto the substrate holder, and then set so that the substrate could be wound up by the substrate winding bobbin in the cover. 10m width as a tape-shaped substrate
m, thickness 0.1mm, length 10cm Hastelloy C27
Six tapes were used. Further, a target made of YSZ (stabilized zirconia) was used. Then, the inside of the vapor deposition processing container of this vapor deposition apparatus was evacuated with a vacuum pump.
The pressure was reduced to 0 × 10 ⁻⁴ Torr. Sputtering voltage 1000
V, the sputtering current was set to 100 mA, the beam incident angle of the ion source was set to 55 degrees, the assist voltage of the ion source was set to 300 V, and the current density of the ion beam was set to 100 μA / c.
m ² , ion irradiation was performed simultaneously with sputtering on the film-forming surface of the substrate, and the tape speed was 10 cm /
The YSZ orientation control polycrystalline intermediate thin film having a thickness of 1.0 μm is deposited by feeding the tape-shaped base material in a time, and the tape-shaped base material after the deposition is introduced from the slit into the cover. The substrate was wound around a substrate winding bobbin while covering the periphery of the substrate. In addition, the current density of the ion beam is based on a numerical value measured by a current density measuring device attached to a deposition processing container.

Next, an oxide superconducting layer having a thickness of 1.0 μm was formed on the orientation-controlling polycrystalline intermediate thin film by using a laser vapor deposition apparatus, thereby producing an oxide superconducting conductor. As a target provided in this laser deposition apparatus, Y _0.7 Ba _1.7 Cu
_A target composed of an oxide superconductor having a composition of _3.0 O _7-x was used. After the pressure inside the vapor deposition processing chamber was reduced to 1 × 10 ⁻⁶ Torr, oxygen was introduced into the interior to 2 × 10 ⁻³ Torr, and laser vapor deposition was performed. An ArF laser having a wavelength of 193 nm was used as a laser for target evaporation. After this film formation, the thin film was heat-treated at 400 ° C. for 60 minutes in an oxygen atmosphere. The oxide superconductor obtained by the above process has a thickness of 102.0 μm, a width of 10 mm, and a length of 10c.
m.

This oxide superconductor was cooled and the critical current density was measured. As a result, the critical current density was 3.0 × 1.
It showed 0 ⁵ A / cm ² (77K, 0T), and it was confirmed that it exhibited extremely excellent superconducting properties. An oxide superconducting conductor having such excellent superconducting properties was obtained because there was no adhesion of a thin film having poor crystal orientation on the outermost surface of the orientation control polycrystalline thin film, and therefore, the crystal orientation on the outermost surface was excellent. This is considered to be because an oxide superconducting layer having excellent crystal orientation can be formed on the orientation control polycrystalline thin film. Therefore, according to the vapor deposition method of the above-described embodiment, since a step of winding while covering the tape-shaped substrate on which the orientation control polycrystalline thin film is vapor-deposited is provided, without lowering the film forming efficiency,
It was found that the crystal orientation of the surface of the orientation controlled polycrystalline thin film could be improved.

(Comparative Example 1) Using a conventional apparatus for depositing a polycrystalline thin film of orientation control having the structure shown in FIG. An oxide superconducting conductor was produced in the same manner as in the above example except that it was wound around a take-up bobbin. The oxide superconductor here has a thickness of about 102.0 μm, a width of 10 mm, and a length of 10 mm.
cm. The tape speed at the time of forming the YSZ orientation control polycrystalline intermediate thin film here was 10 cm / hour. The oxide superconductor was cooled and the critical current density was measured. As a result, the critical current density was 1.0 × 10 ⁵ A /
cm ² (77 K, 0 T), indicating that the superconducting properties were poor compared to the oxide superconducting conductor obtained in the example.

[0028]

As described above, in the method for depositing an orientation-controlling polycrystalline thin film according to the first aspect, constituent particles of a target are sequentially deposited on a tape-shaped base material and an ion beam is irradiated. Since the method comprises a step of winding while covering the tape-shaped base material on which the orientation control polycrystalline thin film is deposited while depositing the orientation control polycrystalline thin film, constituent particles of the target diffused into the deposition processing container Hardly adheres to the surface of the orientation controlling polycrystalline thin film formed on the substrate on the substrate winding device side, and a thin film with poor crystal orientation that adheres to the outermost surface of the orientation controlling polycrystalline thin film is practically used. In addition, it can be greatly reduced to a level where there is almost no problem. Therefore, when an oxide superconducting layer is formed on an orientation-controlling polycrystalline thin film having little crystal adhesion with poor crystal orientation and excellent crystal orientation on the outermost surface, this oxide superconducting layer also has crystal orientation. And the superconducting properties of the resulting oxide superconducting conductor can be improved. Further, since a thin film having poor crystal orientation is hardly attached to the outermost surface of the orientation control polycrystalline thin film, it is not necessary to form such a thin film having poor crystal orientation while removing it with an ion beam. In addition, the film forming efficiency does not significantly decrease.

In the apparatus for depositing an orientation-controlling polycrystalline thin film according to the second aspect of the present invention, in particular, the tape-shaped base material after the evaporation and the tape-shaped base material after the evaporation wound on the substrate winding device A cover for covering the base material together with the base material winding device is provided, and a slit for introducing the tape-shaped base material after vapor deposition is formed in the cover. It can be suitably used for a deposition method of a crystalline thin film.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram showing an embodiment of an orientation control polycrystalline thin film deposition apparatus of the present invention.

FIG. 2 is a perspective view showing a cover provided in the orientation control polycrystalline thin film deposition apparatus of FIG. 1;

FIG. 3 is a cross-sectional view showing an example of an ion gun provided in the orientation control polycrystalline thin film deposition apparatus shown in FIG.

FIG. 4 is a schematic configuration diagram showing an example of a conventional apparatus for depositing an orientation control polycrystalline thin film.

[Explanation of symbols]

22: tape-shaped base material, 25: base material winding bobbin (base material winding device), 26: cover, 27: slit, 36 ...
-Target, 38 ... Sputter beam irradiation device (sputtering means), 39 ... Ion gun, 40 ... Vapor deposition container.

 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Takashi Saito 1-5-1, Kiba, Koto-ku, Tokyo Inside Fujikura Co., Ltd.

Claims (2)

[Claims] 1. A target component particle generated from a target provided in an evaporation processing container capable of being evacuated is sequentially deposited on a tape-shaped substrate moving in the vicinity of the target, and the substrate deposition surface In an orientation control polycrystalline thin film deposition method of irradiating an ion beam from an oblique direction to deposit an orientation control polycrystalline thin film, the constituent particles of the target are sequentially deposited on the tape-shaped base material and the ion beam is irradiated. And depositing the orientation control polycrystalline thin film while covering the tape-shaped substrate on which the orientation control polycrystalline thin film is deposited. 2. A target, sputtering means for sputtering constituent particles of the target and depositing the target on a tape-shaped substrate moving in the vicinity of the target, and a target for depositing the target on the tape-shaped substrate. An ion gun that irradiates the constituent particles with an ion beam from an oblique direction of the substrate deposition surface, and a substrate winding device that winds up a tape-shaped substrate on which an orientation-controlling polycrystalline thin film has been deposited. In a deposition apparatus for an orientation-controlling polycrystalline thin film provided in a container, a tape-shaped base material after evaporation and a tape-like base material after evaporation wound by the base material winding device are used as the base material. An apparatus for depositing an orientation-controlled polycrystalline thin film, comprising a cover for covering the entire winding device, wherein the cover is provided with a slit for introducing a tape-shaped base material after the deposition.