JPH11174392A - Optical modulating element - Google Patents

Optical modulating element

Info

Publication number
JPH11174392A
JPH11174392A JP33688197A JP33688197A JPH11174392A JP H11174392 A JPH11174392 A JP H11174392A JP 33688197 A JP33688197 A JP 33688197A JP 33688197 A JP33688197 A JP 33688197A JP H11174392 A JPH11174392 A JP H11174392A
Authority
JP
Japan
Prior art keywords
light
individual electrodes
modulation element
electrode
electro
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP33688197A
Other languages
Japanese (ja)
Other versions
JP3385567B2 (en
Inventor
Ryoichi Yamamoto
亮一 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP33688197A priority Critical patent/JP3385567B2/en
Priority to US09/206,972 priority patent/US6057955A/en
Publication of JPH11174392A publication Critical patent/JPH11174392A/en
Application granted granted Critical
Publication of JP3385567B2 publication Critical patent/JP3385567B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To obtain an excellent image on a binary sensitive material by using an optical modulating element which uses an electrooptic crystal. SOLUTION: In the optical modulating element 10 formed of an electrooptic crystal substrate 11 having individual electrodes 12 arrayed linearly on one surface and a common electrode 12 formed on the other surface, respective individual electrodes 13 are made trapezoid (parallelogram) having a couple of sides, crossing the array direction (x-axial direction) of the individual electrodes 13, at a specific angle to the traveling direction (z-axial direction) of light made incident on the optical modulating element. At this time, the angle of the sides of the individual electrodes crossing the x-axial direction to the z-axial direction is determined so that adjacent individual electrodes 13 share part of the x-axial area of the substrate 11.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、レーザープリンタ
やディジタル複写機等の記録装置、主として2値感材に
対し網点で階調を表現する印刷分野の記録装置に用いら
れる光変調素子に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light modulator used in a recording apparatus such as a laser printer or a digital copying machine, and more particularly to a recording apparatus in the printing field for expressing a gray scale with a halftone dot on a binary photosensitive material. It is.

【0002】[0002]

【従来の技術】従来からレーザプリンタやディジタル複
写機等の記録装置においては、一般に電気光学結晶から
なる光変調素子アレイが用いられている。
2. Description of the Related Art Conventionally, in a recording apparatus such as a laser printer or a digital copier, a light modulation element array made of an electro-optic crystal is generally used.

【0003】特開平4-372927号には、光路長を長くする
ことにより駆動電圧を低くし、電気光学結晶基板の一面
に個別電極、他面に共通電極を設けた光変調素子が開示
されており、特に、画素間のクロストークを防止するた
めに各電極の中間に物理的な開口分離溝を設けることが
望ましい旨が開示されている。
[0003] Japanese Patent Application Laid-Open No. 4-372927 discloses an optical modulation element in which a drive voltage is lowered by increasing an optical path length, and an individual electrode is provided on one surface of an electro-optic crystal substrate and a common electrode is provided on the other surface. In particular, it discloses that it is desirable to provide a physical opening separation groove in the middle of each electrode in order to prevent crosstalk between pixels.

【0004】しかしながら、上記のようにクロストーク
低減のための開口分離溝構造とした場合、記録対象とな
る感材が印刷等の網点画像を構成する場合に用いられる
2値感材であるとき、形成される画像(線)が著しく細
るという問題が生じる。また、該溝を設けない場合に
も、光変調素子の電極幅/電気光学結晶基板厚のアスペ
クト比が小さくなると問題が生じる。該アスペクト比が
小さくなるに従い、透過する変調光が理想的な平行平板
近似から得られる矩形からずれ、ガウス分布的になって
くるため、やはり2値感材への画像形成においては画像
線が細る。なお、端面入射型の光変調素子ではこのよう
なアスペクト比で用いられることが多い。
However, when the aperture separating groove structure for reducing crosstalk is used as described above, when the photosensitive material to be recorded is a binary photosensitive material used for forming a halftone image such as printing. This causes a problem that the formed image (line) becomes extremely thin. Even when the groove is not provided, a problem arises when the aspect ratio of the electrode width of the light modulation element / the thickness of the electro-optic crystal substrate becomes small. As the aspect ratio decreases, the transmitted modulated light deviates from the rectangular shape obtained from the ideal parallel plate approximation and becomes Gaussian, so that the image line becomes narrower in image formation on a binary photosensitive material. . It should be noted that the edge incidence type light modulation element is often used with such an aspect ratio.

【0005】上記のような光変調素子の一例を図5に示
す。図5(a)に示す従来例の光変調素子40は、電気光
学結晶基板(PLZT板)41の一面に共通電極42、他面
に複数個の個別電極43が設けられ、各個別電極43は長方
形状に形成されている。同図(b)は(a)の光変調素
子40を個別電極上方から見た図である。開口ピッチは10
0 μm、電極の形状は幅(x方向幅)=80μm、長さ
(z方向長)=2mm、基板厚(y方向厚)=250 μm
とし、開口ピッチ/PLZT板厚比は1/2.5 である。
この光変調素子において、連続する開口a,b,cを光
透過状態/光遮断状態/光透過状態に設定した場合の透
過光のプロファイルは図4(c)に示すものとなる。図
示するように、ビームのプロファイルは平行平板近似か
ら予想される矩形ではなく、ガウス分布に近い形状とな
る。このようなプロファイルとなる光変調素子を用いて
2値感材等を露光する場合、例えば、同図中の閾値レベ
ルTh 以上のパワーの光のみにより画像が形成されるた
め、感光材料上に形成される画像線が本来の開口ピッチ
と比較して細いものとなってしまう。具体的には、使用
される感光材料(感材)上に画像が形成され得るパワー
閾値レベルTh がピークパワーの80%であった場合、線
画像の幅は開口ピッチの0.65倍となる。隣り合う開口が
共に光透過状態となっている場合にはそれぞれの端部に
おいて透過状態がオーバーラップするために線の細りは
少ないが、上記のように両隣が非透過状態となるような
場合には線細りのために良好な画像が得られない。
FIG. 5 shows an example of such a light modulation element. The light modulation element 40 of the conventional example shown in FIG. 5A has a common electrode 42 on one surface of an electro-optic crystal substrate (PLZT plate) 41 and a plurality of individual electrodes 43 on the other surface. It is formed in a rectangular shape. FIG. 2B is a diagram of the light modulation element 40 of FIG. 1A viewed from above the individual electrodes. Opening pitch is 10
0 μm, electrode shape width (x-direction width) = 80 μm, length (z-direction length) = 2 mm, substrate thickness (y-direction thickness) = 250 μm
And the opening pitch / PLZT plate thickness ratio is 1 / 2.5.
In this light modulation element, the profile of the transmitted light when the continuous openings a, b, and c are set to the light transmitting state / light blocking state / light transmitting state is as shown in FIG. As shown in the figure, the beam profile has a shape close to a Gaussian distribution, not a rectangle expected from the parallel plate approximation. When exposing a binary photosensitive material or the like using a light modulation element having such a profile, for example, an image is formed only by light having a power equal to or higher than the threshold level Th in FIG. The resulting image line becomes narrower than the original aperture pitch. Specifically, when the power threshold level Th at which an image can be formed on a photosensitive material (sensitive material) used is 80% of the peak power, the width of the line image is 0.65 times the aperture pitch. When the adjacent openings are both in the light transmitting state, the lines are less thin because the transmitting states overlap at each end, but as described above, when both sides are in the non-transmitting state No good image can be obtained due to line thinning.

【0006】また、特開昭63-129318 号には、1次元状
に配列された開口の形状が、光軸(z軸)に垂直な平面
(xy平面)で見て台形であることを特徴とする光変調
素子が開示されている。一般に、開口列に垂直な方向に
感材を主走査して画像を形成する場合、各開口の形状を
単純な分離された長方形で構成すると、各開口間で露光
され得ない空白部が生じ、結果として画像の主走査方向
に縦スジムラが生じる。この特開昭63-129318 号では、
この問題を解決するために、開口形状を台形にし、感材
が主走査方向に走査された時に各開口からの露光をオー
バーラップさせる旨が開示されている。
Japanese Patent Application Laid-Open No. 63-129318 is characterized in that the openings arranged one-dimensionally are trapezoidal when viewed on a plane (xy plane) perpendicular to the optical axis (z axis). Is disclosed. In general, when an image is formed by main-scanning a photosensitive material in a direction perpendicular to the row of openings, if the shape of each opening is configured as a simple separated rectangle, a blank portion that cannot be exposed between the openings occurs. As a result, vertical unevenness occurs in the main scanning direction of the image. In this JP-A-63-129318,
In order to solve this problem, it is disclosed that the shape of the opening is trapezoidal, and exposure from each opening is overlapped when the photosensitive material is scanned in the main scanning direction.

【0007】上述のように開口形状を台形にしたことに
より、前述の特開平4-372927号で述べた問題点である画
像(線)の細りに対して改善効果が期待される。一方、
このような開口の形状および配置を、PLZTセラミッ
ク等の電気光学結晶の2次の電気光学効果を用いるよう
に実現するためには立体的に形成された開口形状が必須
であるが、端面入射型の構造で実現するためには電気光
学結晶に斜めに開口分離溝を切り込み形成する等の複雑
な加工を行う必要があり、工業的には現実的でない。
[0007] The trapezoidal shape of the opening as described above is expected to improve the thinning of the image (line), which is a problem described in the above-mentioned JP-A-4-372927. on the other hand,
In order to realize such a shape and arrangement of the opening so as to use the secondary electro-optic effect of an electro-optic crystal such as a PLZT ceramic, a three-dimensionally formed opening shape is indispensable. In order to realize this structure, it is necessary to perform complicated processing such as forming an opening separation groove obliquely in the electro-optic crystal, which is not industrially practical.

【0008】[0008]

【発明が解決しようとする課題】本発明は、電気光学結
晶の2次電気光学効果を用いた端面入射型の光変調素子
において、特に2値感材へ露光する場合に、感材上に形
成される画像の線幅が著しく細くなるという従来の光変
調素子における問題点を鑑みて、2値感材上への画像形
成時にも線幅が細らない光変調素子を提供することを目
的とする。
SUMMARY OF THE INVENTION The present invention relates to an edge-incidence type light modulation element using the secondary electro-optic effect of an electro-optic crystal, particularly when a binary photosensitive material is exposed to light. In view of the problem in the conventional light modulation element that the line width of an image to be formed becomes extremely narrow, an object of the present invention is to provide a light modulation element in which the line width is not reduced even when an image is formed on a binary photosensitive material. I do.

【0009】[0009]

【課題を解決するための手段】本発明の光変調素子は、
一方の面に複数個の個別電極が一次元的に配列形成さ
れ、他方の面に前記複数個の個別電極の全てに対向する
共通電極が形成された電気光学結晶基板からなり、前記
共通電極と前記各個別電極に挟まれた前記電気光学結晶
基板の各部分をそれぞれ前記対向する電極間の電圧の制
御により光を透過する状態と光を遮断する状態との間で
切り換える開口部とし、前記電気光学結晶基板の一端面
から前記個別電極の配列方向に対して垂直な方向から前
記開口部に入射された光を変調する光変調素子におい
て、前記各個別電極が、該各個別電極の占める該個別電
極の前記配列方向の前記電気光学結晶基板上の領域を、
隣り合う個別電極と一部共有する形状に形成されている
ことを特徴とするものである。
According to the present invention, there is provided an optical modulator comprising:
A plurality of individual electrodes are one-dimensionally arranged and formed on one surface, and the other surface is formed of an electro-optic crystal substrate in which a common electrode facing all of the plurality of individual electrodes is formed. An opening for switching between a state in which light is transmitted and a state in which light is blocked by controlling a voltage between the opposing electrodes; In a light modulation element that modulates light incident on the opening from a direction perpendicular to the arrangement direction of the individual electrodes from one end face of the optical crystal substrate, each of the individual electrodes occupies the individual electrode occupied by the individual electrode. A region on the electro-optic crystal substrate in the arrangement direction of the electrodes,
It is characterized in that it is formed in a shape that is partially shared with adjacent individual electrodes.

【0010】ここで、開口部とは対向する電極に挟まれ
た部分を意味する。この開口部が光透過状態に設定され
た場合の該開口部における光透過率は開口部全体にわた
って一様であるとは限らず、また、必ずしも光透過領域
と一致するものではない。
[0010] Here, the opening means a portion sandwiched between opposing electrodes. When this opening is set in a light transmitting state, the light transmittance in the opening is not always uniform over the entire opening and does not always coincide with the light transmitting region.

【0011】なお、各個別電極の形状としては、該個別
電極の前記配列方向と交わる一対の辺の少なくとも一方
の辺が前記光の進行方向に対して所定の角度を有する台
形状であり、前記所定の角度をθ、前記一方の辺の長さ
をLとしたとき、隣り合う前記個別電極の間隔dが d<L×sinθ であることが望ましい。
The shape of each individual electrode is a trapezoidal shape in which at least one of a pair of sides intersecting with the arrangement direction of the individual electrodes has a predetermined angle with respect to the traveling direction of the light. When a predetermined angle is θ and the length of the one side is L, it is preferable that a distance d between the adjacent individual electrodes satisfies d <L × sin θ.

【0012】前記「台形状」とは、菱形、平行四辺形を
も含み、その配列は該台形を同方向に配したものであっ
ても、入れ子的に配したものであってもよい。
The "trapezoidal shape" includes a rhombus and a parallelogram, and the arrangement may be such that the trapezoids are arranged in the same direction or nested.

【0013】なお、「前記所定の角度をθ、前記一方の
辺の長さをLとしたとき、隣り合う前記個別電極の間隔
dが、d<L×sinθであること」とは、即ち、前記
所定の角度θとしては、電極の間隔dを挟んで隣り合う
電極が該間隔dでオーバーラップする(領域を共有す
る)だけの角度を有するという意味である。なお、上式
は、前記一方の辺の長さLの光軸方向への射影長をL’
としたときの、d<L’×tanθと同じ意味である。
[0013] When the predetermined angle is θ and the length of the one side is L, the interval d between the adjacent individual electrodes is d <L × sin θ. The predetermined angle θ means that electrodes adjacent to each other with an electrode distance d therebetween have an angle enough to overlap (share a region) at the distance d. In the above equation, the projection length of the length L of the one side in the optical axis direction is L ′.
Has the same meaning as d <L ′ × tan θ.

【0014】[0014]

【発明の効果】本発明の光変調素子は、電気光学結晶基
板の一面に配された複数の個別電極の各個別電極が、該
個別電極の配列方向の領域を隣り合う個別電極と一部共
有する形状に形成されていることにより、各開口が光透
過状態に設定されたとき、所定の値、例えば2値感材へ
の画像形成に必要なパワー閾値以上の透過光量を示す部
分が、電極が長方形状であり同等の開口ピッチを有する
従来の素子と比較して広がる。従って、2値感材を露光
する場合にも本光変調素子を用いると各開口を透過した
光により形成される画像の線画像の幅は、長方形状の個
別電極を有する従来の光変調素子の場合と比較して細り
が小さくなり、結果として良好な画像を得ることができ
る。
According to the light modulation element of the present invention, each of the plurality of individual electrodes arranged on one surface of the electro-optic crystal substrate partially shares the area in the arrangement direction of the individual electrodes with the adjacent individual electrodes. When each opening is set in a light transmitting state, a portion showing a predetermined amount, for example, a transmitted light amount equal to or higher than a power threshold necessary for image formation on a binary photosensitive material, is formed by the electrode. Is wider than a conventional element having a rectangular shape and the same opening pitch. Therefore, when the present light modulation element is used even when exposing a binary photosensitive material, the width of the line image of the image formed by the light transmitted through each opening is smaller than that of a conventional light modulation element having rectangular individual electrodes. As compared with the case, the thinning is reduced, and as a result, a good image can be obtained.

【0015】[0015]

【発明の実施の形態】以下に、本発明の実施の形態を図
面を用いて詳細に説明する。
Embodiments of the present invention will be described below in detail with reference to the drawings.

【0016】図1は本発明の光変調素子の一実施形態の
電極配置(給電用のボンディングワイヤは図示せず)
(同図(a),(b))と透過光プロファイル(同図
(c))を示す。
FIG. 1 shows an electrode arrangement of a light modulation device according to an embodiment of the present invention (bonding wires for power supply are not shown).
(FIGS. 3A and 3B) and a transmitted light profile (FIG. 3C).

【0017】本発明の光変調素子10は、PLZTセラミ
ックからなる電気光学結晶基板11と、該光学結晶基板11
の下面に形成された共通電極12と、上面に形成された複
数個の個別電極13とからなる(図1(a))。図1
(b)は同図(a)に示されている光変調素子10を個別
電極13の上方から見た図である。同図(b)に示すよう
に、本光変調素子10は、各個別電極13のx軸と交わる辺
がz軸に対して所定の角度θを有し、該個別電極13が平
行四辺形状に形成されていることを特徴とする。なお、
本発明の光変調素子10は、図2に示すように温度調節用
アッシィ20の上に配され、各個別電極13は図示しない駆
動回路に接続されている。なお、温度調節用アッシィ20
は、サーモエレクトロニック素子21、放熱フィン22、サ
ーミスタ23を備えている。
The light modulation element 10 of the present invention comprises an electro-optic crystal substrate 11 made of PLZT ceramic,
And a plurality of individual electrodes 13 formed on the upper surface (FIG. 1A). FIG.
FIG. 2B is a diagram of the light modulation element 10 shown in FIG. As shown in FIG. 1B, in the present light modulation element 10, the side of each individual electrode 13 that intersects the x-axis has a predetermined angle θ with respect to the z-axis, and the individual electrode 13 has a parallelogram shape. It is characterized by being formed. In addition,
As shown in FIG. 2, the light modulation element 10 of the present invention is disposed on a temperature adjusting assembly 20, and each individual electrode 13 is connected to a drive circuit (not shown). Note that the temperature control assembly 20
Includes a thermoelectronic element 21, a heat radiation fin 22, and a thermistor 23.

【0018】以下に、本光変調素子の構造を作成方法と
併せて説明する。
In the following, the structure of the present light modulation element will be described together with the manufacturing method.

【0019】電気光学媒体としては、(LaxPb1-x)(ZryTi
1-y)1-x/4O3 、組成比は%単位でx/y/1-y=9/65/35、グ
レインサイズ平均4μmφのPLZTセラミックを用
い、素子の母材としては、該PLZTセラミックを250
μm厚にスライスし、両面を若干研磨したウエファーを
用いる。
As the electro-optical medium, (La x Pb 1-x ) (Zr y Ti
1-y ) 1-x / 4 O 3 , using a PLZT ceramic having a composition ratio of x / y / 1-y = 9/65/35 in units of% and an average grain size of 4 μmφ. 250 PLZT ceramic
A wafer sliced to a thickness of μm and slightly polished on both sides is used.

【0020】先ず、該ウエファーの片面に共通電極12と
して、真空蒸着法によりCr/Au 積層膜を形成する。この
ときCr膜の厚みは50A (オングストローム)、Au膜の厚
みは500Aとする。次に共通電極12が形成された面と対向
する他面にリフトオフ法により個別電極群を形成する。
この個別電極13を形成する面にフォトレジストを塗布
し、予め個別電極パターンおよび個別の素子へ切断する
際のカッティングマーク等のパターンを設けたフォトマ
スクにて露光後現像し、フォトレジストのパターンを形
成する。その後、共通電極形成と同様にCr/Au 電極を真
空蒸着法により形成する。最後に、そのウエファーをア
セトン中に浸漬してフォトレジストパターンを溶解して
該フォトレジストパターン上に蒸着されていたCr/Au 薄
膜をリフトオフし、所望の電極パターン(複数個の個別
電極13)を得る。
First, a Cr / Au laminated film is formed as a common electrode 12 on one side of the wafer by a vacuum deposition method. At this time, the thickness of the Cr film is 50 A (angstrom), and the thickness of the Au film is 500 A. Next, an individual electrode group is formed by a lift-off method on the other surface opposite to the surface on which the common electrode 12 is formed.
A photoresist is applied to the surface on which the individual electrodes 13 are to be formed, and is exposed and developed using a photomask provided with a pattern such as an individual electrode pattern and a cutting mark for cutting into individual elements in advance. Form. Thereafter, a Cr / Au electrode is formed by a vacuum deposition method in the same manner as the formation of the common electrode. Finally, the wafer is immersed in acetone to dissolve the photoresist pattern, lift off the Cr / Au thin film deposited on the photoresist pattern, and form a desired electrode pattern (a plurality of individual electrodes 13). obtain.

【0021】本実施形態では、光変調素子の幾何学的な
寸法として、開口ピッチは100 μmとし、個別電極の形
状は幅(x方向)=90μm、長さ(z軸=光軸方向の射
影長)=2mm、光軸(z軸)と個別電極の辺がなす角
度θを1°、電極の間隔(x方向)=10μm、とした。
開口ピッチ/PLZT板厚比は1/2.5 である。
In this embodiment, as the geometric dimensions of the light modulation element, the aperture pitch is 100 μm, and the shape of the individual electrodes is width (x direction) = 90 μm and length (z axis = projection in the direction of the optical axis). Length) = 2 mm, the angle θ between the optical axis (z-axis) and the side of the individual electrode was 1 °, and the distance between electrodes (x direction) was 10 μm.
The opening pitch / PLZT plate thickness ratio is 1 / 2.5.

【0022】ここで光軸と個別電極の辺がなす角度θと
しては、隣り合う個別電極が基板のx軸方向の領域の一
部を共有する、即ち、z方向から見たとき、個別電極の
端の一部が隣り合う電極とオーバーラップする程度の角
度が必要である。下限としては少なくとも隣り合う電極
が1点でオーバーラップする角度が必要であり、例え
ば、本実施形態においては、tan-1(10μm/2mm)=0.
3 °が必要となる。また、どのような感材に記録するか
により必要なオーバーラップ量が異なるため該角度の上
限は記録すべき感材によって異なるが、概ね開口ピッチ
の1/3程度でオーバーラップする程度が望ましい。本
実施形態の光変調素子の長さ=2mmに対してはtan
-1(60μm/2mm)〜2°程度までである。
Here, the angle θ formed between the optical axis and the side of the individual electrode is such that adjacent individual electrodes share a part of the region of the substrate in the x-axis direction, ie, when viewed from the z direction, An angle is required such that a part of the end overlaps with the adjacent electrode. As a lower limit, at least an angle at which adjacent electrodes overlap at one point is necessary. For example, in this embodiment, tan -1 (10 μm / 2 mm) = 0.
3 ° is required. Also, since the necessary amount of overlap differs depending on the type of photographic material to be recorded, the upper limit of the angle varies depending on the photographic material to be recorded, but it is preferable that the angle overlaps at about 1/3 of the aperture pitch. For the length of the light modulation element of this embodiment = 2 mm, tan
-1 (60 μm / 2 mm) to about 2 °.

【0023】また、本実施形態では、電極形状は平行四
辺形としたが、図3(a)に示すように電極を同様な角
度を持った台形として入れ子的に配してもよい。なお、
Z軸方向から見て互いにオーバーラップする形状であれ
ばどんな形状であってもよく、例えば図3(b),
(c)に示す三角形状や、多角形状であってもよい。次
に、ダイサーによりウエファーを各素子へ切断する。各
素子は幅(x方向)=26mm(256 個の開口)、長さ
(z方向)=2mmの形状とした。
In this embodiment, the electrodes are parallelograms. However, as shown in FIG. 3A, the electrodes may be nested as trapezoids having similar angles. In addition,
Any shape may be used as long as the shapes overlap each other when viewed from the Z-axis direction.
The shape may be triangular or polygonal as shown in FIG. Next, the wafer is cut into each element by a dicer. Each element had a shape of width (x direction) = 26 mm (256 openings) and length (z direction) = 2 mm.

【0024】切断した各素子の光入射端面15および出射
端面16は、光学研磨されたのち、実際に用いる光の波長
に対して無反射コートが施される。ここでは、無反射コ
ーティングにSiO2膜を用いたが、その他の材料により構
成してもよい。
The light incident end face 15 and the output end face 16 of each cut element are optically polished, and then coated with a non-reflection coating for the wavelength of light actually used. Here, the SiO 2 film is used for the anti-reflection coating, but may be made of other materials.

【0025】加工された素子10の共通電極12が形成され
た側の面(共通電極12の表面)を、温度調節用アッシィ
20の上に取り付けられた台板(図示せず)の上に固定す
る。台板は共通電極の電気的な端子も兼ねているので良
導電性で、且つ、良熱伝導性の材料が望ましい。ここで
は、アルミ(Al)からなる台板を用い、該台板と素子
10との接着には導電性接着材を用いた(図1)。なお、
この接着には半田等を用いてもよい。この台板の電気光
学素子10に近い部分には温度検出用のサーミスタを挿入
するための穴を設けてあり、サーミスタ23を挿入してあ
る。最後に、各個別電極13を駆動回路に結線されたボン
ディングパッド24へワイヤーボンディングにより接続す
る。
The surface on the side of the processed element 10 on which the common electrode 12 is formed (the surface of the common electrode 12) is attached to a temperature adjusting assembly.
It is fixed on a base plate (not shown) mounted on 20. Since the base plate also serves as an electrical terminal of the common electrode, a material having good electrical conductivity and good thermal conductivity is desirable. Here, a base plate made of aluminum (Al) is used.
A conductive adhesive material was used for bonding with FIG. 10 (FIG. 1). In addition,
For this bonding, solder or the like may be used. A hole for inserting a thermistor for temperature detection is provided in a portion of the base plate near the electro-optical element 10, and a thermistor 23 is inserted therein. Finally, each individual electrode 13 is connected to a bonding pad 24 connected to the drive circuit by wire bonding.

【0026】上述のようにして作成された光変調素子10
は、図4に示すような光学系30において用いられる。図
4は、上記光変調素子10を含む記録装置の光学系30の側
面図である。レーザ光源31から出射されたレーザ光L
は、シリンドリカルレンズ32を含むレンズ群33により光
変調素子10全体を照明する線状の光に成形される。成形
された光は、偏光比が不足する場合は偏光子(図3には
図示せず)を通した後、1/2波長板34により偏光方向
を光変調素子10のx軸に対して45°回転させて、該素子
10に入射する。該光変調素子10に入射した光は、変調素
子10の個別電極13に印加されている電圧に応じて電気光
学媒体中に生じる複屈折により、その偏光面が回転させ
られて出射される。
The light modulation device 10 produced as described above
Is used in an optical system 30 as shown in FIG. FIG. 4 is a side view of the optical system 30 of the recording apparatus including the light modulation element 10. Laser light L emitted from laser light source 31
Is shaped into linear light for illuminating the entire light modulating element 10 by a lens group 33 including a cylindrical lens 32. The shaped light is passed through a polarizer (not shown in FIG. 3) when the polarization ratio is insufficient, and then the polarization direction is changed by the half-wave plate 34 to 45 with respect to the x-axis of the light modulation element 10. ° rotate the element
It is incident on 10. The light incident on the light modulation element 10 is emitted with its polarization plane rotated by birefringence generated in the electro-optic medium according to the voltage applied to the individual electrodes 13 of the modulation element 10.

【0027】本実施形態においては、光透過状態に設定
するべき開口に対応する電極間には80Vを印加した。
In the present embodiment, 80 V was applied between the electrodes corresponding to the openings to be set in the light transmitting state.

【0028】光変調素子10を透過した光は、再び1/2
波長板35にて45°だけ戻され(なお、1/2波長板35は
必ずしも必要ではない)、前述の図示しない偏光子とク
ロスニコルを成すように配置された偏光子36において偏
光面角度の変調を光の強度変化に変換される。その後、
結像レンズ系37で開口像を所望のサイズに縮小し、ドラ
ム38上の感材面上に結像する。本実施形態においては、
光変調素子10の開口ピッチ=100 μmを30μmに縮小し
た。
The light transmitted through the light modulation element 10 is again reduced to a half.
The light is returned by 45 ° at the wave plate 35 (the half-wave plate 35 is not always necessary). The modulation is converted to a change in light intensity. afterwards,
The aperture image is reduced to a desired size by the imaging lens system 37, and is formed on the photosensitive material surface on the drum 38. In the present embodiment,
The aperture pitch of the light modulating element 10 was reduced from 100 μm to 30 μm.

【0029】図1(c)には、連続した開口a,b,c
を光透過状態/光遮断状態/光透過状態と設定した場合
の透過光プロファイルの例を示している。このように、
光透過状態とされている開口a,cを透過する光の光量
はほぼ開口幅と等しい幅で感材の閾値レベルTh を越え
るものとなっており、隣り合う開口が連続して光透過状
態となっていない場合でも、各開口から出射された光に
より形成される画像線は細りがほとんどなく、2値感材
上においても良好な画像が得られる。具体的には、画像
が形成されるパワーの閾値レベルTh が80%であった場
合の線画像の幅は開口ピッチの1.0 倍であった。
FIG. 1C shows continuous openings a, b, and c.
2 shows an example of a transmitted light profile when is set to a light transmitting state / light blocking state / light transmitting state. in this way,
The amount of light transmitted through the openings a and c in the light transmitting state exceeds the threshold level Th of the light-sensitive material at a width substantially equal to the opening width, and the adjacent openings are continuously in the light transmitting state. Even if it is not, the image line formed by the light emitted from each opening has almost no thinning, and a good image can be obtained even on the binary photosensitive material. Specifically, the width of the line image when the threshold level Th of the power for forming an image was 80% was 1.0 times the aperture pitch.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施形態に係る光変調素子FIG. 1 is a light modulation element according to an embodiment of the present invention.

【図2】本発明の光変調素子に制御回路を配した光変調
装置
FIG. 2 is a light modulation device in which a control circuit is arranged in the light modulation element of the present invention.

【図3】本発明の光変調素子の形状を表す図FIG. 3 is a diagram showing a shape of a light modulation element of the present invention.

【図4】本発明の光変調素子を備えた記録装置の光学系
の側面図
FIG. 4 is a side view of an optical system of a recording apparatus provided with the light modulation element of the present invention.

【図5】従来の端面入射型光変調素子FIG. 5 is a conventional end-surface incidence type light modulation element.

【符号の説明】[Explanation of symbols]

10 光変調素子 11 電気光学結晶基板 12 共通電極 13 個別電極 20 温度調節用アッシィ 21 サーモエレクトロニック素子 22 放熱フィン 23 サーミスタ 24 ボンディングパッド 31 レーザ光源 32 シリンドリカルレンズ 33 レンズ群 34,35 λ/2板 36 偏光子 37 結像レンズ系 38 ドラム 10 light modulation element 11 electro-optic crystal substrate 12 common electrode 13 individual electrode 20 temperature control assembly 21 thermoelectronic element 22 heat radiation fin 23 thermistor 24 bonding pad 31 laser light source 32 cylindrical lens 33 lens group 34, 35 λ / 2 plate 36 polarized light Child 37 Imaging lens system 38 Drum

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 一方の面に複数個の個別電極が一次元的
に配列形成され、他方の面に前記複数個の個別電極の全
てに対向する共通電極が形成された電気光学結晶基板か
らなり、前記共通電極と前記各個別電極に挟まれた前記
電気光学結晶基板の各部分をそれぞれ前記対向する電極
間の電圧の制御により光を透過する状態と光を遮断する
状態との間で切り換える開口部とし、前記電気光学結晶
基板の一端面から前記個別電極の配列方向に対して垂直
な方向から前記開口部に入射された光を変調する光変調
素子において、 前記各個別電極が、該各個別電極の占める該個別電極の
前記配列方向の前記電気光学結晶基板上の領域を、隣り
合う個別電極と一部共有する形状に形成されていること
を特徴とする光変調素子。
1. An electro-optic crystal substrate in which a plurality of individual electrodes are one-dimensionally arranged on one surface and a common electrode is formed on the other surface to face all of the plurality of individual electrodes. An opening for switching each part of the electro-optic crystal substrate sandwiched between the common electrode and each of the individual electrodes between a state in which light is transmitted and a state in which light is blocked by controlling a voltage between the opposing electrodes; A light modulator that modulates light incident on the opening from a direction perpendicular to the arrangement direction of the individual electrodes from one end surface of the electro-optic crystal substrate, wherein each of the individual electrodes is A light modulation element, wherein a region of an electrode on the electro-optic crystal substrate in the arrangement direction of the electrode is partially shared with an adjacent individual electrode.
【請求項2】 前記各個別電極が、該個別電極の前記配
列方向と交わる一対の辺の少なくとも一方の辺が前記光
の進行方向に対して所定の角度を有する台形状であり、 前記所定の角度をθ、前記一方の辺の長さをLとしたと
き、隣り合う前記個別電極の間隔dが d<L×sinθ であることを特徴とする請求項1記載の光変調素子。
2. Each of the individual electrodes has a trapezoidal shape in which at least one of a pair of sides intersecting with the arrangement direction of the individual electrodes has a predetermined angle with respect to a traveling direction of the light. 2. The light modulation element according to claim 1, wherein, when an angle is θ and a length of the one side is L, a distance d between the adjacent individual electrodes is d <L × sin θ.
JP33688197A 1997-12-08 1997-12-08 Light modulation element Expired - Fee Related JP3385567B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP33688197A JP3385567B2 (en) 1997-12-08 1997-12-08 Light modulation element
US09/206,972 US6057955A (en) 1997-12-08 1998-12-08 Optical modulator and drive method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33688197A JP3385567B2 (en) 1997-12-08 1997-12-08 Light modulation element

Publications (2)

Publication Number Publication Date
JPH11174392A true JPH11174392A (en) 1999-07-02
JP3385567B2 JP3385567B2 (en) 2003-03-10

Family

ID=18303526

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP3385567B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007310251A (en) * 2006-05-22 2007-11-29 V Technology Co Ltd Aligner

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007310251A (en) * 2006-05-22 2007-11-29 V Technology Co Ltd Aligner

Also Published As

Publication number Publication date
JP3385567B2 (en) 2003-03-10

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