JPH1116815A - Method and device for electron beam lithography device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To draw with high precision even under such condition as a vibration from a floor is transferred to an electron beam lithography device, by performing polarization correction of electron beam for a vibration detection signal in a sample chamber. SOLUTION: The vibration transferred from floor to a sample chamber 7 is detected with a vibration meter 13, and sent to a correction signal generating device 14. At the correction signal generating device 14, based on the transfer function of a vibration signal in the sample chamber 7 which is detected with the vibration meter 13 and a position vibration of electron beam to the vibration of the sample chamber 7, a displacement amount of the electron beam is calculated for polarization-correction real time of the position of electron beam. For calculating a displacement amount of the electron beam, a vibration detection signal is Fourier-transformed to obtain a vibration amplitude of a frequency region, and, based on a transfer function or toe vibration amplitude and the position vibration or the electron beam to the pre-obtained vibration of the sample chamber 7, a displacement amount is identified.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam for performing high-precision drawing by detecting vibration transmitted from an external environment such as floor vibration to an electron beam drawing apparatus and correcting the deflection of the irradiation position of the electron beam. The present invention relates to a writing method, an electron beam writing apparatus, and a semiconductor device.

[0002]

2. Description of the Related Art In recent years, as the degree of integration of semiconductor devices has improved, fine processing dimensions have been required. Therefore, it is required that the drawing accuracy of the electron beam drawing apparatus be higher. An electron beam lithography system consisting of a sample chamber set on a surface plate and an electron optical column converges an electron beam emitted from an electron gun by an electron lens and deflects it by a deflector, thereby forming a desired pattern on the sample. To draw. At this time, when vibration from the floor is transmitted to the surface plate, the sample chamber and the electron optical column vibrate, and the positional relationship between the sample and the electron optical column holding the electron gun, the electron lens, and the deflector. Are relatively displaced, so that the position of the electron beam is displaced on the sample, and the writing accuracy is reduced. Conventionally, for example, in Japanese Patent Application Laid-Open No. 2-189916, a method of correcting a stage position measurement result in accordance with a beam deviation angle in order to reduce the influence of the tilting vibration of an electron beam lithography apparatus on the lithography accuracy. Has been proposed. That is, in the above method, although the coordinates of the stage are read, the length measurement result is corrected according to the magnitude of the shift angle of the electron beam. Further, Japanese Patent Application No. 8-45815 and drawings disclose a method of correcting a beam irradiation position by feeding back a vibration amplitude of each vibration mode to a deflector when a structure vibrates in a plurality of vibration modes. Proposed. In this case, since impulsive vibration is applied as an impulse, a plurality of natural vibrations are excited at the same time. Specifically, 160 Hz, 200 Hz,
By superimposing the vibration amplitudes of the three modes of 250 Hz,
Feedback is provided to the deflector. Further, in Japanese Patent Application Laid-Open No. Hei 6-117481, in order to suppress the vibration of the surface plate caused by disturbance, the vibration of the surface plate is detected, and the actuator supporting the surface plate is driven.
Methods have been proposed to isolate vibrations from the external environment.
That is, in this method, the platen itself is stopped by the actuator against the vibration. However, in this method, since the position of the surface plate only needs to be stopped, there is a possibility that the electron optical barrel also vibrates when the actuator operates.

[0003]

Conventionally, in a low frequency band such as a floor vibration, the sample chamber and the electron optical column vibrate integrally, so that it is not considered that the drawing is affected. However, even when a vibration isolation mechanism is provided between the floor and the sample chamber, the vibration amplitude of the sample chamber is about 1 μm at 5 Hz when the stage is moved. At this time,
When the electron optical column vibrates in the same phase as the sample chamber and the vibration amplitude ratio of the electron optical column to the sample chamber is 1.5 to 3 times, the displacement of the electron beam on the sample is several to several tens. It turned out to be nanometers. In order to cut off vibrations to the apparatus from external environmental vibrations such as floor vibrations, passive vibration damping mechanisms and active vibration damping mechanisms that dampen with an actuator are used. The passive anti-vibration mechanism is, for example, a mechanism that damps vibration by adjusting a spring constant and a damping coefficient of an air damper or an oil damper, and the active anti-vibration mechanism is, for example, mounted on a surface plate with an actuator such as a piezoelectric element. It is a mechanism to stop by applying force. However, the passive vibration isolation mechanism has a large vibration isolation effect in a frequency band of 10 Hz or more, but has a poor vibration isolation effect at the resonance point of the passive vibration isolation mechanism. In this regard, the active vibration isolation mechanism can effectively perform vibration isolation even in a low frequency band. In this active anti-vibration mechanism, the position vibration of the beam can be reduced by operating the actuator to rapidly attenuate the vibration of the structure.

However, in the method using active vibration isolation, since the actuator is operated so that the position of the sample chamber is stopped, the displacement of the electron beam caused when the electron optical column vibrates due to the operation of the actuator cannot be reduced. . Then, we detect the vibration of the structure,
A better effect can be expected by a method of directly correcting the deflection of the beam. Further, since the beam position correction does not use an actuator, the price of the apparatus can be reduced. On the other hand, in the above-mentioned conventional example, correction is performed by feeding back only a plurality of modes of natural vibration to the deflector. However, in view of the frequency band, it is necessary to correct the surroundings of the natural vibration. That is, regarding the beam position correction focusing on the natural vibration of the structure, it is possible to remove the influence of the vibration appearing as a spectrum,
It does not work well for floor vibrations that have a distribution in a certain frequency band. Accordingly, an object of the present invention is to solve such a conventional problem and to correct the deflection of the vibration detection signal of the sample chamber to the position of the electron beam in a state where the vibration from the floor is transmitted to the electron beam drawing apparatus. It is an object of the present invention to provide an electron beam lithography method and an electron beam lithography apparatus that can perform high-precision drawing by correcting the peripheral frequency band of the natural vibration of the structure and correcting the natural frequency of the structure.

[0005]

In order to achieve the above object, in the electron beam writing method of the present invention, first, a transfer function between the position vibration of the electron beam and the position vibration of the sample chamber is measured. The measurement result of the transfer function is stored in the correction amount calculation device in the correction signal generation device. Next, a vibration detection signal is obtained from a vibrometer attached to the sample chamber, and the vibration detection signal is supplied to a correction signal generation device. In the correction signal generation device, the vibration detection signal is Fourier-transformed into the vibration amplitude of the sample chamber and supplied to the correction amount calculation device. Next, the amount of displacement of the electron beam is calculated based on the vibration amplitude of the sample chamber and the transfer function, and the amount of correction for correcting the displacement is determined.
Further, the signal adjuster converts the position correction amount of the electron beam into a correction signal to the deflector, and adjusts the magnitude and phase of the correction signal. By supplying this correction signal to the deflector, it is possible to carry out drawing with the influence of floor vibration removed. In the present invention, since the transfer function of the vibration of the electron optical column with respect to the vibration of the sample chamber is invariable, the position change of the electron optical column can be predicted from the vibration detection signal of the sample chamber based on this transfer function. I paid attention. Further, since the electron beam is emitted from an electron gun mounted on the upper part of the electron optical column, there is a correlation between the position of the upper part of the electron optical column and the position of the electron beam on the sample. Therefore, it is possible to correct the displacement of the electron beam from the transfer function of the position vibration of the electron beam with respect to the position vibration of the sample chamber and the vibration detection signal of the electron optical column.

[0006]

Embodiments of the present invention will be described below in detail with reference to the drawings. In an electron beam writing apparatus for writing a fine pattern, mechanical vibration is one of the factors that lower the writing accuracy. In the passive vibration isolation mechanism, the vibration isolation effect is poor with respect to a low vibration of 10 Hz or less such as floor vibration, and vibration that cannot be completely removed may be transmitted to the sample chamber. At this time, it has been measured that the vibration of the electron optical column is amplified more than the vibration of the sample chamber. Therefore, in the present invention, in order to reduce the displacement of the electron beam due to this vibration, the magnitude and phase of the transfer function of the beam relative to the position vibration of the sample chamber are detected while detecting the vibration of the sample chamber. Based on this, the irradiation position of the electron beam is corrected in real time. That is, in the present invention, the drawing is performed while correcting the beam position shift caused by the floor vibration. Further, according to the present invention, since the beam position shift due to the floor vibration can be corrected as described above, no extra mechanism is required for the vibration isolation table, and the vibration isolation table can be simplified.

(First Embodiment) FIG. 1 is a cross-sectional configuration diagram of an electron beam lithography apparatus showing a first embodiment of the present invention. The electron beam 3 emitted from the electron gun 2 in the electron optical column 1 is
The light is converged by the electron lens 4 and deflected by the deflector 5 to irradiate the sample 6. Inside the sample chamber 7, a stage 8 on which the sample 6 is mounted is housed.
Is driven by the stage drive system 9. Electron optical column 1
Is set on the upper surface of the sample chamber 7. Further, a main body composed of the electron optical column 1 and the sample chamber 7 is installed on a vibration isolation table 10. The electron optical column 1 and the sample chamber 7
Is evacuated by a pump 12 through a valve 11 and is kept in a vacuum. A vibrometer 13 is attached to the sample chamber 7, and the vibration of the sample chamber 7 is detected. The vibration meter 13 may be either an accelerometer or a displacement meter. Examples of the accelerometer include a piezoelectric accelerometer, an electrodynamic accelerometer, a strain gauge accelerometer, and a servo accelerometer, and examples of the displacement meter include a capacitance displacement meter and a laser displacement meter. When an accelerometer is used, a displacement signal is obtained by integrating the acceleration signal twice.

FIG. 2 is a diagram showing a vibration mode of the electron beam lithography apparatus, and FIG. 3 is a diagram showing a transfer function between the vibration of the electron optical column and the vibration of the sample chamber. The beam position correction in the present invention is performed as follows. The vibration detection signal of the sample chamber 7 is sent to the correction signal generator 14 to generate a deflection correction signal. The method of generating the deflection correction signal will be described later. This deflection correction signal is added to the deflection signal of the drawing data output from the electron beam controller 15 and sent to the deflector 5. Thus, in this embodiment,
The displacement is reduced by correcting the deflection of the position of the electron beam while detecting the vibration. As shown in FIG. 2, the sample chamber 7 vibrates due to floor vibration or stage movement,
When the relative position between the sample 6 and the electron optical column 1 changes, a beam position shift occurs on the sample 6. As a result of measuring the transfer function of the electron optical column 1 with respect to the sample chamber 7, the phase of the transfer function was as shown in FIG. 3A, and the vibration amplitude of the transfer function was as shown in FIG. 3B. The electron optical column 1 vibrated in the same phase as the sample chamber 7, and the vibration amplitude ratio of the electron optical column 1 to the sample chamber 7 was 5 to 8 dB (1.5 to 2.5 times). For this reason,
It was found that the vibration transmitted from the floor vibration was further amplified in the process of being transmitted from the sample chamber 7 to the electron optical column 1.

Next, a method of measuring the irradiation position of the electron beam will be described. FIG. 4 is a diagram showing a method of measuring the position of an electron beam by the knife edge method, and FIG. 5 is a diagram showing a method of measuring the position of the electron beam by the standard mark method. As shown in FIG. 4A, the electron beam 3 is applied to a knife edge 16 made of metal, silicon, or the like. When the position of the electron beam 3 changes, the current amount of the beam current detector 17 changes as shown in FIG. As shown in FIG. 4B, while the electron beam 3 is irradiated on the sample 17 without irradiating the knife edge 16, the amount of transmitted electrons is large.
When the electron beam 3 begins to impinge on the knife edge 16, the amount of transmitted electrons rapidly decreases. Therefore, by examining the relationship between the current amount of the beam current detector 17 and the scanning amount of the electron beam, the change in the beam irradiation position can be measured from the change in the current amount. Further, as shown in FIG. 5A, when the electron beam 3 is irradiated to the edge of the standard mark 18 and the reflected electrons at that time are detected by the reflected electron detector 19, as shown in FIG. While the electron beam 3 irradiates the sample without hitting the edge of the standard mark 18, the amount of reflected electrons is small,
, The amount of reflected electrons rapidly increases. The change in the irradiation position of the electron beam may be measured from the change in the amount of reflected electrons.

FIG. 6 is a diagram showing a method of measuring a transfer function at a resonance point, and FIG. 7 is a diagram showing a method of automatically measuring a transfer function. In this embodiment, in order to accurately obtain the magnitude and phase characteristics of the amplitude with respect to the frequency, the measurement is performed using a configuration as shown in FIG. Then, the relationship between the position vibration of the beam and the vibration of the sample chamber 7, that is, the transfer function at the resonance point is obtained as follows. As shown in FIG. 6, a vibration meter 13 is attached to the sample chamber 7, and the vibration of the sample chamber 7 is detected. Further, the position vibration of the electron beam on the sample is measured from the output signal of the beam current detector 17 by the knife edge method. The thus obtained vibration detection signal of the sample chamber 7 and the detection signal of the position vibration of the electron beam are given to the transfer function measuring device 20. The transfer function measuring device 20 measures a transfer function between the vibration of the sample chamber 7 and the position vibration of the electron beam. From the magnitude and phase of the transfer function at the resonance point,
The vibration amplitude ratio and the phase difference between the beam and the sample chamber 7 are known. Therefore, based on the beam position vibration, the vibration amplitude ratio of the sample chamber 7 and the phase difference, the amount of displacement of the beam can be calculated from the vibration detection signal of the sample chamber 7. Further, as shown in FIG. 7, a vibrator 21 is attached to the device, and a frequency sweep signal, a random vibration signal, and an impulse signal are given to the vibrator 21 by a vibration signal generator 22, and the device is intentionally mounted. The transfer function between the vibration of the sample chamber 7 and the position vibration of the electron beam may be measured automatically.

FIG. 8 is a block diagram of a correction signal generating apparatus according to an embodiment of the present invention. As shown in FIG. 8, the correction signal generation device 14 includes a frequency analysis device 23, a correction amount calculation device 24, and a signal adjustment unit 25. By detecting the vibration detection signal of the sample chamber 7 with the vibrometer 13 and supplying it to the frequency analyzer 23, the frequency analyzer 23 extracts only the resonance point component of the vibration isolation table from the vibration detection signal. As a specific example of the frequency analysis device 23, there is a bandpass filter set at the resonance point of the vibration isolation table. The transfer function between the previously measured vibration of the sample chamber 7 and the position vibration of the electron beam is stored in the next correction amount calculating device 24. The amount of displacement of the beam is calculated from the vibration detection signal of the resonance point component of the sample chamber 7 that has passed through the frequency analyzer 23 and the magnitude and phase of the transfer function at the resonance point of the vibration isolation table. Since the relationship between the position of the electron beam and the deflection voltage is linear, the signal adjuster 25 outputs a signal for correcting the position shift of the beam supplied from the correction amount calculator 24.

FIG. 9 is a diagram illustrating a method of correcting the position of an electron beam in the X and Y directions according to the present invention, and FIG. 10 is a diagram illustrating a method of supplying a correction signal to a deflector according to the present invention. In order to reduce the displacement of the beam on the XY plane, as shown in FIG.
7, the vibrations of the sample chamber 7 in the X and Y directions are detected and supplied to a bandpass filter X28 and a bandpass filter Y29. Then, the signal after passing through each band-pass filter is supplied to the correction amount calculating device 24, and the amount of displacement of the beam in the X direction is calculated based on the transfer function in the X direction, and based on the transfer function in the Y direction. The amount of displacement of the beam in the Y direction is calculated.
The signal adjusting unit 25 outputs a correction signal corresponding to the beam position shift occurring in the X direction and the Y direction, respectively, to the correction signal X3
0 and output as a correction signal Y31. As shown in FIG. 10, the correction signal X3 output from the correction signal generation device 14
0 and the correction signal Y31 are stored in the electron beam controller 15 respectively.
Are added to the deflection signal X32 and the deflection signal Y33 output from the controller and supplied to the deflector X34 and the deflector Y35. As described above, the beam position deviation caused by the floor vibration is corrected by correcting the deflection of the beam position based on the transfer function of the beam position vibration with respect to the vibration of the sample chamber 7 based on the vibration detection signal of the sample chamber 7. To draw. In the first embodiment, a method is described in which a transfer function at a resonance point is obtained, a beam position shift is calculated from the transfer function, and deflection of the beam position is corrected. For example, this is an embodiment in which a signal based on the air damper of the vibration isolation table 10 is corrected.

(Second Embodiment) FIG. 11 shows a second embodiment of the present invention, in which the position of a beam is corrected in an arbitrary frequency band. In the first embodiment,
Although the method of measuring the transfer function at the resonance point and the method of correcting the position of the electron beam have been described, in the present embodiment, the method of correcting the position of the beam in a frequency band around the resonance point will be described in detail.
The signal detected from the vibration meter 13 is supplied to the frequency analyzer 23. Here, the resonance point of the vibration isolation table 10 is assumed to be f and an integer n. In the frequency analyzer 23, an arbitrary frequency band (f-
nδ,..., f,..., f + nδ) are subjected to discrete frequency analysis of the vibration detection signal. The correction amount calculating device 24 calculates the position correction amount of the beam for each frequency in the same manner as in the first embodiment, and supplies it to the signal adjusting unit 25 for each frequency. The signal adjuster 25 outputs a signal corresponding to the beam position correction amount for each frequency. Further, the output signal is added to one to obtain a deflection correction signal. Note that if the addition is performed immediately after the frequency analysis, the correction amount is incorrectly calculated.
The reason is that, as a function of the filter, one sensor separates the waveform into a plurality of different waveforms. Therefore, if the correction amount is calculated with the overlapped signal, it does not correspond to the beam position, and as a result, the influence on the beam differs. come.

FIG. 12 shows another embodiment of the frequency analyzer, in which a plurality of bandpass filters are used. FIG. 13 shows the relationship between the vibration of the surface plate and the position vibration of the electron beam. FIG. 14 is a diagram illustrating a configuration example of a correction amount calculation device. The resonance point is set to f (Hz) and n is an integer, and a band-pass filter 36 is provided in the frequency analysis device 23 in which the center frequency is shifted by δ (Hz) from f-n δ (Hz) to f + n δ (Hz), A vibration detection signal is supplied to these bandpass filters 36 at the same time. From the signal passing through each bandpass filter, the vibration amplitude of the sample chamber 7 at each frequency can be obtained. Note that the center frequency of the bandpass filter is a frequency f ± iδ (Hz) centered on the resonance point f.
(I = 1, 2,..., N). Next, in the correction amount calculating device 24, the transfer function between the vibration amplitude of the sample chamber 7 for each vibration frequency obtained as shown in FIG. (B)), the displacement of the electron beam can be reduced as shown in FIG.
It can be obtained as shown in (c). Therefore, as shown in FIG. 14, in the correction amount calculating device 24, the signal amplitudes (A-2, A-1, A0, A + 1, A + 2) passed through the plurality of band-pass filters 36 in the frequency analyzing device 23 are calculated. By amplifying by the magnitude of the transfer function (K-2, K-1, K0, K + 1, K + 2), the displacement of the electron beam for each frequency can be reduced by (E-2, E-1, E0, E + 1, E + 2). ) Can be obtained in real time. Next, this beam position shift is sent to the signal controller 25 for each frequency,
By performing the same signal processing as in the embodiment, the beam position can be corrected not only at the resonance point but also at the frequency bands before and after the resonance point.

(Third Embodiment) FIG. 15 shows a third embodiment of the present invention, and is an example of a configuration using a fast Fourier transform unit as a frequency analyzer. The vibration detection signal of the sample chamber 7 is converted to a fast Fourier transformer 3
7 and the vibration amplitude (A-
2, A-1, A0, A + 1, A + 2). Further, a time history waveform for each frequency is obtained by performing an inverse Fourier transform at each frequency using the inverse Fourier transformer 38. Hereinafter, by performing the same signal processing as in the second embodiment, the beam position can be corrected not only at the resonance point but also at the frequency bands before and after the resonance point. The fast Fourier transformer 37 is a kind of Fourier transformer, and performs digital Fourier transform. The fast Fourier transformer 37 outputs a spectrum waveform of the vibration detection signal in real time and supplies it to each frequency.

(Fourth Embodiment) FIG. 16 shows a fourth embodiment of the present invention, and is an example of a configuration in which an apparatus main body is installed on a surface plate. The main body composed of the electron optical column 1 and the sample chamber 7 is installed on a surface plate 39, and the surface plate 39
It is installed on. The vibration meter 13 is attached to the surface plate 39 to detect the vibration of the surface plate 39. By subjecting the vibration detection signal of the surface plate to the same processing as the vibration detection signals of the sample chamber described in the first to third embodiments, the displacement of the beam caused by the floor vibration is corrected. Normally, as shown in FIG. 16, the main body is used by being installed on a surface plate 39.

(Fifth Embodiment) FIG. 17 is a view showing a fifth embodiment of the present invention, and shows a manufacturing process of a semiconductor integrated circuit using the electron beam drawing method of the present invention. 17A to 17D are cross-sectional views of the element showing the steps.
Since the experiment was performed, the electron beam lithography method of the present invention was not used in all the steps, but was performed using the method of the present invention only in the step of patterning the photosensitive agent 49 in FIG. 17C. In other steps, the effect of the present invention was confirmed by using a conventional method. The P well layer 41, the P layer 42, the field oxide film 43, the polycrystalline silicon / silicon oxide film gate 44, the P high concentration diffusion layer 45, the P high concentration diffusion layer 4
6 and the like were formed (FIG. 17A). Next, an insulating film 47 of phosphor glass (PSG) was applied, and the insulating film 47 was dry-etched to form a contact hole 48 (FIG. 1).
7 (B)). Next, the W / TiN electrode wiring 5 is formed in a usual manner.
No. 0 material was applied, a photosensitive agent 49 was applied thereon, and the photosensitive agent 49 was patterned using the electron beam drawing method of the present invention (FIG. 17C). Then, a W / TiN electrode wiring 50 was formed by dry etching or the like.

Next, an interlayer insulating film 51 was formed, and a hole pattern 52 was formed by a usual method. Hole pattern 52
Are embedded with W plugs to connect the Al second wiring 53 (FIG. 17D). The subsequent passivation process
The conventional method was used. In the present embodiment, only the main manufacturing process has been described, but the same process as the conventional method is used except that the electron beam drawing method of the present invention is used in the lithography process for forming the W / TiN electrode wiring. Through the above steps, a fine pattern can be formed, and a CMOS LSI can be manufactured with a high yield. As a result of manufacturing a semiconductor integrated circuit by using the electron beam drawing method of the present invention, it was possible to prevent the occurrence of poor resolution of wiring, and to greatly improve the yield of non-defective products.

[0019]

As described above, according to the present invention,
Even in a state where the vibration from the floor is transmitted to the electron beam drawing apparatus, highly accurate drawing can be performed by correcting the deflection of the vibration detection signal of the sample chamber to the position of the electron beam.
Further, according to the configuration of the present invention, the vibration isolation table can be simplified.

[Brief description of the drawings]

FIG. 1 is a sectional structural view of an electron beam lithography apparatus showing a first embodiment of the present invention.

FIG. 2 is a diagram illustrating a vibration mode of the electron beam writing apparatus.

FIG. 3 is a characteristic diagram showing a transfer function of the vibration of the electron optical column with respect to the vibration of the sample chamber.

FIG. 4 is a diagram showing a method of measuring the position of an electron beam by a knife edge method.

FIG. 5 is a diagram showing a method of measuring the position of an electron beam by a standard mark method.

FIG. 6 is a diagram showing a method for measuring a transfer function according to the present invention.

FIG. 7 is a diagram illustrating a method for automatically measuring a transfer function according to the present invention.

FIG. 8 is a diagram showing a configuration of a correction signal generation device according to the present invention.

FIG. 9 is a diagram showing a method for correcting the position of an electron beam in the X and Y directions according to the present invention.

FIG. 10 is a diagram showing a method of supplying a correction signal in FIG. 9 to a deflector.

FIG. 11 is a configuration diagram of an electron beam lithography apparatus according to a second embodiment of the present invention, in which a correction signal is discretely generated in an arbitrary frequency band.

FIG. 12 is an example in which a plurality of bandpass filters are used in the frequency analysis device according to the present invention.

FIG. 13 is a diagram showing the relationship between the vibration of the sample chamber and the position vibration of the electron beam.

FIG. 14 is a diagram illustrating a configuration example of a correction amount calculation device according to the present invention.

FIG. 15 is a configuration diagram of an electron beam lithography apparatus showing a third embodiment of the present invention, in which a fast Fourier transform is used for a frequency analysis apparatus.

FIG. 16 is a sectional structural view of an electron beam lithography apparatus according to a fourth embodiment of the present invention, showing an example in which the apparatus main body is installed on a surface plate.

FIG. 17 is a process chart showing a case where the drawing method of the present invention is applied to a manufacturing process of a semiconductor integrated circuit.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Electron optical column, 2 ... Electron gun, 3 ... Electron beam, 4 ...
Electron lens, 5 ... deflector, 6 ... sample, 7 ... sample chamber, 8 ...
Stage, 9: Stage drive system, 10: Vibration isolation table, 11 ...
Valve 12 Vacuum pump 13 Vibrometer 14 Correction signal generator 15 Electron beam controller 16 Knife edge 17 Beam current detector 18 Standard mark
19: backscattered electron detector, 20: arrival function measuring device, 21 ...
Exciter, 22 Excitation signal generator, 23 Frequency analyzer, 24 Correction amount calculator, 25 Signal adjuster, 26
Vibrometer X, 27 ... Vibrometer Y, 28 ... Bandpass filter X, 29 ... Bandpass filter Y, 30 ... Correction signal X,
31: correction signal Y, 32: deflection signal X, 33: deflection signal Y, 34: deflector X, 35: deflector Y, 36: bandpass filter, 37: fast Fourier transformer, 38: inverse Fourier transformer 39 ... plate, 40 ... N minus silicon substrate, 41 ... P well layer, 42 ... P layer, 43 ... field oxide film, 44 ... polycrystalline silicon / silicon oxide film gate, 45 ... P high concentration diffusion layer, 46 ... N high concentration diffusion layer, 4
7 ... phosphor glass (PSG) insulating film, 48 ... contact hole, 49 ... photosensitizer, 50 ... W / TiN electrode wiring, 5
1 ... interlayer insulating film, 52 ... hole pattern, 53 ... Al second wiring.

Claims (8)

[Claims] An electron beam emitted from an electron gun is converged by an electron lens, the electron beam is deflected by a deflector, and the electron beam is irradiated on a sample to draw a predetermined pattern on the sample. In the beam writing method, a first step of analyzing a resonance point of the vibration or a vibration frequency around the resonance point in response to the vibration of the sample chamber, and analyzing the vibration frequency analysis result and data stored in advance. An electron beam writing method, comprising: a second step of specifying a shift amount of an electron beam; and a third step of writing a pattern while deflecting the shift amount to an irradiation position of the electron beam. . 2. The electron beam lithography method according to claim 1, wherein the second step of specifying the displacement of the electron beam is performed by performing a Fourier transform on a vibration detection signal from the sample chamber, thereby obtaining a vibration amplitude in a frequency domain. An electron beam lithography method, wherein the amount of displacement of the electron beam is specified from the vibration amplitude and a previously determined transfer function of the position vibration of the electron beam with respect to the vibration of the sample chamber. . 3. The electron beam drawing method according to claim 2, wherein a fast Fourier transform process is used as the step of performing the Fourier transform. 4. A semiconductor device manufactured by using the drawing method according to claim 1. 5. An electron gun, an electron lens for converging an electron beam from the electron gun, an electron optical column having a deflector for deflecting the electron beam, a stage for mounting a sample, and placing the sample in a vacuum atmosphere. An electron beam lithography apparatus comprising: a stage mechanism having a sample chamber for holding; receiving a vibration of the sample chamber, and discretely detecting vibration detection signals of a resonance point of the vibration isolation table and each frequency component around the resonance point. Means for performing frequency analysis; means for specifying the amount of displacement of the electron beam from the transfer function between the vibration detection signal and the previously measured vibration of the position of the electron beam relative to the vibration of the sample chamber; and deflecting the displacement. Means for drawing a predetermined pattern while making corrections. 6. An electron gun, an electron lens for converging an electron beam from the electron gun, an electron optical column having a deflector for deflecting the electron beam, a stage for mounting a sample, and placing the sample in a vacuum atmosphere. An electron beam lithography apparatus comprising: a stage mechanism having a sample chamber for holding; a platen on which the sample chamber is installed; and an anti-vibration table supporting the platen. Means for detecting the position of the electron beam; means for specifying the amount of displacement of the electron beam by using the vibration detection signal from the vibration detecting means; and drawing a predetermined pattern while deflecting and correcting the amount of displacement to the irradiation position of the electron beam. Means for performing electron beam drawing. 7. The electron beam lithography apparatus according to claim 5, further comprising a band-pass filter as a unit for specifying a displacement amount of the electron beam from the vibration detection signal. Electron beam drawing equipment. 8. A semiconductor device manufactured by using the drawing method according to claim 5.