JPH1116485A - Electron gun, ion generator, ion trap device, electron trap device, or vapor deposition device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To trap unnecessary reverse flow electrons, reduce discharge elements, obstruct the entry of reverse flow electrons, and lengthen the life by arranging a magnetic field generating means as an ion trap, an ion trap target, and a magnetic shield means. SOLUTION: Cations reversely advancing to electron beams pass through a magnetic lens 12 and a gas pouring chamber 11, and the amount of cations is increased in the gas pouring chamber 11. The cations enter from an opening 9a of a magnetic shield 9 in reverse to electron beams. Since magnetic field is generated by a coil 7 on the inside of the magnetic shield 9, the cations go out from an opening 9c different from an opening 9b from which the electron beams go in, and collide with an ion trap target 8. Since the ion trap target 8 is at an earth potential the same as an anode 5, charges are absorbed, generated scattered atoms flow out on the electron beam side with a vacuum exhaust device 10 nearly arranged, to avert generating ions again eventually.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a technique relating to an electron gun, an ion generator, an ion trap device, an electron trap device, or a vapor deposition device.

[0002]

2. Description of the Related Art JP-A-56-52845 and JP-A-57-15
No. 8930 discloses that an electron gun that separates an electron beam and ions, traps ions, emits only an electron beam, and uses the electron gun is used in a picture tube (CRT).

[0003] In this technique, since the ions are anions, there is no problem in that the ions travel in a direction opposite to the electron beam of the cations described below to attack the electron gun.

[0004] In the case of an electron beam which is a particle bundle of negative charge, the potential inside the electron beam becomes negative from its surroundings.

Positive ions generated by the thermal ionization and interaction with the electrons are taken into the electron beam while being accelerated by the negative potential and proceed in the opposite direction to the electron beam.

[0006] The ions traveling backward from the electron beam are accelerated by an electric field formed by the electron beam and have a velocity depending on the charge density, beam diameter, and generated ion density of the electron beam.

The ions traveling in the opposite direction are further accelerated by an electric field for electron acceleration formed between the cathode and the anode, and collide with the cathode, causing so-called sputtering to reduce the amount of the cathode.

In the cathode, it is necessary to maintain the electron generating surface at a high temperature in order to emit many electrons.

For this reason, a filament is arranged on the back side of the electron generating surface, and the cathode is thinned to maintain a high temperature. Therefore, when the cathode is reduced, a through hole is formed, which restricts the amount of generated electrons, changes the electron beam generation direction due to electric field change due to the formation of the through hole, and causes a filament such as a filament by the ions passing through the through hole to be behind the cathode. This has adverse effects such as damage to the equipment to be placed.

In a device such as a vapor deposition device or a welding device which applies an electron gun to a metal as a target, the target metal becomes ions and goes back to the electron beam, damaging a cathode or the like, which is an electron generating portion, and greatly shortening its life. To be shorter.

For this reason, countermeasures such as installing an ion collector behind the cathode and providing an ion trap in the middle have been taken.

As an ion trap type electron gun, as shown in Japanese Patent Application Laid-Open No. 3-84838, fins with a large number of electric fields applied between magnetic lenses are provided to remove ions traveling backward inside the electron beam. There is something to say.

This utilizes the fact that forces acting on ions and electrons in an electric field are in opposite directions.

[0014]

A conventional cation ion trap, in which the traveling direction of electrons and the traveling direction of ions are opposite to each other, is a conventional ion trap for cations, which is a medium for ions and gases such as residual gas, metal and the like entering the inside of the electron gun. It is considered that the discharge frequently occurs between the ground potential regions such as the voltage application portion and the casing which are set as described above.

When the discharge occurs, a voltage current having a steep rise is applied to the power supply maintaining the voltage, and there is a concern that the power supply may be damaged and the life thereof may be shortened.

Even when the capacity of the power supply is increased, a protection circuit is provided, the generation of electron beams is temporarily interrupted, and damage is prevented by exhausting ions by a vacuum device,
The interruption of the electron beam results in a reduction of the working time.

Therefore, an ion trap utilizing an electric field is
It can be applied only to a special device configuration that can be applied even in a state where discharge frequently occurs.

A first object of the present invention is to provide a long-life electron gun, a second object is to provide a long-life ion generator capable of trapping unnecessary back-flow electrons, and a third object is to provide an ion generator having a long life. A fourth object of the present invention is to provide a long-lived ion trap device having a small number of discharge elements, and a long-lived electron trap device for preventing the back-flow electrons from entering the ion source of the ion generator. In particular, a fifth object is to provide a long-life evaporation apparatus.

[0019]

According to a first aspect of the present invention, there is provided an electron gun having an ion trap around a trajectory of an electron beam. Magnetic field generating means arranged on the side of the orbit, and a target for capturing ions of earth potential arranged at a position upstream of the electron beam from the magnetic field generating means and at a position shifted laterally from the orbit of the electron beam, A magnetic shield means covering the magnetic field generating portion and having an opening at a site where the electron beam passes, wherein the ion trap to which a magnetic field is applied can suppress discharge, and can be used continuously for a long time. A long-life electron gun can be provided.

Similarly, the second means is an electron gun characterized in that the center of the magnetic field generating means is eccentric with respect to the center of the opening in the first means. In accordance with the eccentricity, a gradient is given to the magnitude of the magnetic field in the ion trap by the magnetic field generating means, so that the ions can be largely separated from the trajectories of the electrons, and the separation performance of the electrons and the ions is improved.

Similarly, the third means is an electron gun provided with a vacuum exhaust device for exhausting the atmosphere near the ion capturing target in the first means or the second means.
In addition to the function and effect of the means, scattered atoms generated by sputtering when ions collide with the ion capture target can be diffused to the electron beam and ionized again to positively exhaust gas so as not to generate ions. Generation of unnecessary ions later can be suppressed.

Similarly, the fourth means is any one of the first means to the third means, wherein the gas inflow chamber through which the electron beam passes downstream of the magnetic field generating means with respect to the electron beam; An electron gun having a magnetic lens for passing the electron beam out of the chamber, wherein the electron beam passes through the gas inflow chamber in addition to the function and effect of any one of the first to third means. In the process of receiving, by the action of the plasma focus, it is possible to subsequently control the electron beam diameter to be small with a magnetic lens, and it is easy to obtain the function of controlling the electron beam diameter required in a vapor deposition apparatus or a welding apparatus, In addition, ions generated in the process of passing the electron beam through the gas inflow chamber travel in the opposite direction to the electron beam and are trapped.

Fifth means for achieving the second object is an ion source, an extraction electrode for ion acceleration disposed downstream of the ion source from the ion source, and an ion source disposed downstream of the ion beam from the extraction electrode. In an ion generator comprising an electron trap, a magnetic field generating means disposed on the side of the ion beam trajectory as the electron trap, and an ion beam upstream of the magnetic field generating means and a side of the ion beam trajectory An ion generating apparatus comprising: a target for capturing an electron at a ground potential disposed at a position shifted to the side; and a magnetic shield means having an opening through which the ion beam can pass and covering the magnetic generating means, and applying a magnetic field. The electron trap can suppress discharge, and can provide a long-life ion gun that can be used continuously.

Sixth means for achieving the third object is a magnetic field generating means arranged on the side of the electron beam trajectory, an electron beam upstream of the magnetic field generating means and a lateral side of the electron beam trajectory. An ion trapping target having a ground potential disposed at a position deviated from the target, magnetic shielding means having an opening covering the magnetic field generating portion and allowing passage of the electron beam, and a vacuum for exhausting an atmosphere near the ion trapping target. This is an ion trap device including an exhaust device, and an ion trap to which a magnetic field is applied can suppress discharge, and can provide a long-life ion trap device.

A seventh means for achieving the fourth object is a magnetic field generating means arranged on the side of the ion beam trajectory, an ion beam upstream of the magnetic field generating means and a side of the ion beam trajectory. An electron trap device comprising: a target for capturing an electron at a ground potential disposed at a shifted position; and a magnetic shield means having an opening covering the magnetic field generating means and allowing passage of the ion beam. The trap can suppress discharge, and can provide a long-life electron trap device.

An eighth means for achieving the fifth object is that an electron gun by any one of the first means to the fourth means and an electron beam from the electron gun are put into a crucible in a vacuum vessel. Electron beam deflecting means for directing the evaporated material;
Above the crucible is a vapor deposition device provided with a region for mounting a vapor deposition plate in the vacuum vessel, and the ion trap device of the electron gun uses a magnetic field that is unlikely to cause a discharge. Interrupt,
There is no damage, and furthermore, it is possible to prevent the generated ions from entering the electron gun and damaging the electron gun by capturing the ions with an ion trap device, thereby further extending the life of the vapor deposition device. I can do things.

[0027]

DESCRIPTION OF THE PREFERRED EMBODIMENTS First, an embodiment of an ion trap type electron gun (hereinafter simply referred to as an electron gun) will be described below.

The ion trap incorporated in the electron gun is
Since the magnetic field is applied to separate the ions from the electron beam, the ion trap mediates the ions and vapors by installing a deposition prevention plate at earth potential in the area where the ions and vapors fly. It is possible to suppress the discharge that occurred.

Therefore, the ion trap can be applied to any apparatus configuration without interrupting the operation due to discharge.

Considering the ion separation performance when a magnetic field is applied, a single charged charged particle passing through a magnetic field draws an orbital radius proportional to the momentum, and the mass ratio of ions to electrons is about 10,000 times or more. In consideration of this, the orbital radii are different and there is no problem in the separation performance. Specifically, it is reported that the electric field formed inside the electron beam has a magnitude of about several tens V to 100 V when comparing the periphery of the electron beam with the center thereof.

FIGS. 7 and 8 show the orbits of ions and electrons in a uniform magnetic field calculated from the ion acceleration mechanism.

The case where the magnetic field is 0.001T and 0.01T, respectively.

The accelerating voltage of the electron beam is 30, 40.
kV.

FIGS. 7 and 8 show that it is sufficiently possible to separate ions and electrons.

For example, in FIG. 7, the center axis is 0.1 to 0.2 m.
By further proceeding, ions and electrons can be sufficiently separated in the direction perpendicular to this axis.

FIG. 1 shows an electron gun incorporating an ion trap.
And specifically has the following configuration.

FIG. 1 shows damage from ions which are made of a material having a high melting point or a small work function, such as tungsten, lanthanum hexaboride, or a metal oxide, generate an electron beam, and enter the electron beam in a direction opposite to the accelerated electron beam. In order to avoid the problem, the cathode provided with a hole in the center 3, the cathode support part which also serves as a cathode support and a current introduction system 4, an ion collector which receives ions transmitted through the hole in the center of the cathode 1, the cathode is heated to generate an electron beam Maintaining filament 2, Anode for accelerating electrons generated from cathode 5,
A magnetic lens 6 for converging an electron beam emitted from the anode 6, a coil 7 for generating a magnetic field in a configuration for trapping ions downstream of the anode, an ion capturing target 8 for capturing separated ions, and surroundings. A magnetic shield 9 for minimizing the influence of the magnetic field of the vacuum, a vacuum exhaust device 10 for exhausting the trapped ions and their scattered atoms out of the electron gun, and a gas that corrects astigmatism of the electron beam and converges again (plasma focus action). Injection chamber 11, magnetic lens 12 and 1 to 1
This is an ion trap type electron gun including an electron gun storage container 13 that stores or supports up to 12 components.
Positive ions traveling backward from the electron beam pass through the magnetic lens 12 and the gas injection chamber 11 from the target and residual gas, and increase the amount of cations in the gas injection chamber 11.

The cations enter from the opening 9a of the magnetic shield 9 in the opposite direction to the electron beam. However, since the magnetic field from the coil 7 is applied inside the magnetic shield 9,
Positive ions exit from an opening 9 c different from the opening 9 b into which the electron beam flows, and collide with the ion capturing target 8. Since the ion capturing target 8 is at the ground (earth) potential similarly to the anode 5, the electric charge is absorbed. In addition, scattered atoms are generated due to the collision of the ions with the ion capturing target 8, but the ions are not generated again by flowing into the electron beam side because the vacuum pumping device 10 is provided close to the scattered atoms.

If the trajectories of the positive ion and the electron beam, which have been subjected to the magnetic field by the coil 7, are drawn in an extremely easy-to-understand manner, FIG.
A is the orbit of the electron beam, B is the trajectory of the cation, and both travel in the opposite direction and have different orbital radii.
Can be separated from each other.

FIG. 2 shows a high-efficiency ion separation ion trap type electron gun as a second embodiment.

FIG. 2 shows damage from ions that are made of a material having a high melting point or a small work function, such as tungsten, lanthanum hexaboride, or a metal oxide, generate an electron beam, and enter the accelerated electron beam. In order to avoid the problem, the cathode with a hole in the center 3, the cathode support part 4 which also serves as a cathode support and current introduction system 4, the ion collector 1 which receives the ions transmitted through the hole in the center of the cathode 1, the cathode is heated to generate an electron beam Filament 2, which maintains the anode, anode 5, which accelerates the electrons generated from the cathode 5,
A magnetic lens 6 for converging an electron beam emitted from the anode, a coil 7 that is located downstream of the anode and generates a magnetic field in a configuration for trapping ions, and a target 8 for capturing ions at a ground potential for capturing separated ions. A magnetic shield 9 for minimizing the influence of a magnetic field on the surroundings; a vacuum exhaust device 10 for exhausting the trapped ions and their scattered atoms outside the electron gun; a gas injection chamber for correcting astigmatism of the electron beam and converging again; This is an ion trap type electron gun comprising an electron gun housing container 13 for housing or supporting components 11, magnetic lenses 12 and 1 to 12.

Positive ions traveling backward from the electron beam pass from the ion capturing target 8 and the residual gas through the magnetic lens 12 and the gas injection chamber 11 to increase the amount of ions in the gas injection chamber, and the magnetic shield 9 It enters from the opening 9a. Since a magnetic field generated by the coil 7 is applied to the inside of the magnetic shield 9, positive ions exit from an opening 9c different from the opening 9b into which the electron beam flows, and collide with the ion capturing target 8 at a ground potential. Since this magnetic field is closer to the right side than the center axis by the magnetic field generating coil 7, the strength of the magnetic field becomes weaker toward the left side from the center as it approaches the end. Therefore, the radius of the orbit of the ions separated from the electron beam increases as the distance from the electron beam increases, and the distance between the ions and the electron beam increases as compared with the case of a uniform magnetic field. Since the ion capture target 8 has the same ground potential as the anode 5, the charge is absorbed. In addition, scattered atoms are generated by the collision of ions, but do not flow into the electron beam side because the evacuation device 10 is provided close to the scattered atoms.

The orbit of the electron beam and the cations in this example are shown in FIG. 9, where A is the trajectory of the electron beam and C is the trajectory of the cations. Since the orbital radius of the cations according to the second embodiment is large, the separation distance of the cations from the electron beam according to the second embodiment is increased and the separation performance is improved.

The third embodiment is shown as the electron trap type ion gun shown in FIG.

In FIG. 3, an ion / neutral gas storage unit 14 for introducing and filling a neutral gas serving as a base of an ion beam from an ion gas inlet 16 and ionizing the charged neutral gas to generate ions. The ion generating electron generating filament 15, the generated ions are taken out of the ion / neutral gas storage unit, and the ion extraction electrode 17 accelerates the ion generation. An electron trap type ion gun is shown that includes a generated coil 7, an electron capture target 18 for capturing separated electrons, and a magnetic shield 9 for minimizing the influence of a magnetic field on the surroundings.

Electrons traveling backward from the ion beam enter through the opening 9 a of the magnetic shield 9. Since a magnetic field is applied to the inside of the magnetic shield 9, the electrons exit from an opening 9 c different from the opening 9 b into which the ion beam flows, and collide with the electron capturing target 18. Since the electron capture target 18 has the same ground potential as the ion extraction electrode 17, the charge is absorbed.

Conceptually, the trajectories of the ion beam and the electron can be considered assuming that A in FIG. 9 is the trajectory of the ion beam and D is the trajectory of the electron.

The fourth embodiment is shown in FIG. 4 as a single ion trap device.

In FIG. 4, a vacuum vessel 38 having an electron beam upstream opening 19, an electron beam downstream opening 20, a vacuum exhaust port, and magnetic shield openings 9a, 9b, 9c provided inside the vacuum vessel 38 are provided. Magnetic shield 9, magnetic field generating coil 21 installed inside vacuum vessel, vacuum vessel 3
A magnetic field generating coil power supply 22 installed outside the magnetic field generating coil 8 and electrically connected to the magnetic field generating coil;
And an ion trap device constituted by the vacuum exhaust device 10. The electron beam generator is connected to the electron beam upstream aperture 19, and a target substance or object is connected to the electron beam downstream aperture 20 for use. The trajectory of the electron beam is optimized by adjusting the current of the coil power supply 22 for generating the magnetic field.

Also in this case, as in the first embodiment, the electron beam enters the magnetic shield 9 from the opening 9b and receives the magnetic field from the magnetic field generating coil 21 to bend the orbit of the electron beam. 9 is emitted outside.

The cations enter the magnetic shield 9 through the opening 9a and receive a magnetic field from the magnetic field generating coil 21 to bend the trajectory of the cations, so that the ion capturing target 8 at the earth potential is obtained.
At this time, the atmosphere affected by the scattered atoms at the time of capture is exhausted by the vacuum exhaust device 10 and released to the outside of the magnetic shield 9.

Also in this example, since the ion trap is formed by applying a magnetic field, a discharge accident can be suppressed.

The fifth embodiment is shown in FIG. 5 as an electron trap device.

In FIG. 5, a vacuum container 38 having an ion beam upstream opening 23, an ion beam downstream opening 24, a vacuum exhaust port, and a magnetic shield having magnetic shield openings 9a and 9b installed inside the vacuum container 38 are shown. 9, a magnetic field generating coil 21 installed inside the vacuum vessel, and a vacuum vessel 38
A magnetic field generating coil power supply 22 that is installed outside the device and is electrically connected to the magnetic field generating coil; an electron capture target 18;
This is an electron trap device including the vacuum evacuation device 10. The ion beam generator has an ion beam upstream aperture 23.
And the target substance or object is connected to the ion beam downstream opening 24 for use. The trajectory of the electron beam is optimized by adjusting the current of the coil power supply 22 for generating the magnetic field.

In this case, the ion beam enters the magnetic shield 9 from the opening 9b and receives a magnetic field from the magnetic field generating coil 21 to bend the trajectory of the ion beam.
From the magnetic shield 9.

The electrons enter the magnetic shield 9 through the opening 9a and receive a magnetic field generated by the magnetic field generating coil 21 to bend the trajectory of the electrons, and collide with the ion capturing target 8 at the ground potential to be captured.

Also in this example, since the electron trap is formed by applying a magnetic field, a discharge accident can be suppressed.

The sixth embodiment is shown in FIG. 6 as a vapor deposition apparatus.

In FIG. 6, a material having a high melting point or a small work function, such as tungsten, lanthanum hexaboride, or a metal oxide, is used to generate an electron beam and to avoid damage from ions that travel backward to the electron beam. A cathode 3 having a hole in the center 3, a cathode support portion 4 serving also as a cathode support and a current introducing system 4, an ion collector 1 for receiving ions transmitted through the hole in the center of the cathode 1, and maintaining the cathode at a high temperature to generate an electron beam. A filament 2, an anode for accelerating electrons generated from a cathode 5, a magnetic lens 6 for converging an electron beam emitted from the anode, a coil 7, which is located downstream of the anode and traps ions, and generates a magnetic field; A target 8 for capturing an ion at a ground potential for capturing trapped ions, a magnetic system for minimizing the influence of a magnetic field on the surroundings. Field 9, the vacuum exhaust device for exhausting the trapped ions and scattered atoms outside the electron gun 10, the gas injection chamber 1 converging corrected correction marks aberration of the electron beam again
1, an electron gun storage container 13 for storing the magnetic lens 12 and components 1 to 12, an evaporating substance 36, a crucible 35 for loading the evaporating substance, an evaporation plate 37, a film thickness meter 30 for measuring an evaporation amount, Electron beam deflection coil 3 for deflecting the electron beam trajectory to irradiate the electron beam to the evaporating substance
3, a deflection coil power supply 34 of the power supply, an ion collector ammeter 25, a target ammeter 26 for ion capture, a cathode voltage adjuster 27, a filament voltage and a current adjuster 28,
This is an electron gun for a vapor deposition apparatus that includes a magnetic field adjusting device 29 for the coil 7, a film thickness gauge control device 31, and an electron gun feedback control device 32.

First, the accelerating voltage adjusting range of the cathode voltage adjusting device 16, the filament voltage and current adjusting device 17 is set. Next, the acceleration voltage is changed within the initially set range so that the ion collector ammeter 14 is minimized, and at the same time, the ion capturing target ammeter is maximized. At this time, the filament voltage and the current flowing from the current adjusting device 17 to the filament 2 are controlled so that the signal from the film thickness control device 31 becomes constant. As a result, stable operation of the electron gun is ensured for a long time, the life of the vapor deposition apparatus is prolonged, and there is no obstacle due to a discharge accident and the vapor deposition operation is not interrupted.

As described above, according to the configuration in which the control device for improving the performance of the ion trap is added, an ion collector is provided behind the cathode, which is an electron beam generating source, and the amount of ions flowing into the electron gun is used as a current. It measures and adjusts the strength of the magnetic field of the ion trap so that this current value is minimized. Since the orbit radius of the electron beam is changed by this adjustment, feedback control can be performed on the anode application voltage and the filament current which are acceleration voltages.

In particular, when evaporating a metal or the like by electron beam heating such as an evaporation apparatus, the present invention can be applied to an apparatus that needs to control the amount of evaporation, and a signal from a film thickness gauge installed in the evaporation apparatus is used as a feedback control signal. The case is described. That is, the intensity B of the magnetic field of the ion trap is determined based on a signal from the ion collector, and the corresponding anode application voltage V is set so that B / ΔV becomes constant. Next, the filament current is adjusted so that the signal from the film thickness meter becomes constant, and a highly efficient operation without waste can be performed.

[0063]

According to the first aspect of the present invention, it is possible to prevent a short life from being sputtered by ions, reduce a discharge accident, and extend the life of the electron gun.

According to the second aspect of the present invention, in addition to the effect of the first aspect of the invention, an effect of improving the performance of separating ions from an electron beam can be obtained.

According to the third aspect of the present invention, in addition to the effects of the first or second aspect of the present invention, the generation of ions again after trapping the ions is prevented, so that the ion gun is less worn out by the ions. It can be further reduced.

According to the fourth aspect of the present invention, in addition to the effect of any one of the first to third aspects of the present invention,
The effect is obtained that the convergence can be improved by adding a plasma focus effect to the electron beam.

According to the fifth aspect of the present invention, the configuration of the ion source can be prevented from being worn by capturing the electrons that travel in reverse with the progress of the ion beam, and there is no discharge accident. A gun can be provided.

According to the sixth aspect of the present invention, it is possible to provide an ion trap device capable of capturing ions traveling backward with respect to the progress of the electron beam and suppressing a discharge accident.

According to the seventh aspect of the present invention, it is possible to provide an electron trap device that captures electrons that travel in reverse with the progress of the ion beam and can suppress a discharge accident.

According to the eighth aspect of the present invention, it is possible to extend the life of the vapor deposition apparatus and to suppress interruption of the work due to a discharge accident.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view of an electron gun according to a first embodiment of the present invention.

FIG. 2 is a longitudinal sectional view of an electron gun according to a second embodiment of the present invention.

FIG. 3 is a longitudinal sectional view of an ion gun according to a third embodiment of the present invention.

FIG. 4 is a longitudinal sectional view of an ion trap device according to a fourth embodiment of the present invention.

FIG. 5 is a longitudinal sectional view of an electron trap device according to a fifth embodiment of the present invention.

FIG. 6 is a longitudinal sectional view of a deposition apparatus according to a sixth embodiment of the present invention.

FIG. 7 is a graph showing the orbital calculation results of electrons and ions at 0.001T.

FIG. 8 is a graph showing the results of orbital calculations of electrons and ions at 0.01T.

FIG. 9 is a path diagram schematically showing an orbital path between an electron beam and positive ions in the first and second embodiments of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Ion collector, 2 ... Filament, 3 ... Cathode, 4 ... Cathode support part, 5 ... Anode, 6, 12 ... Magnetic lens, 7 ... Coil, 8 ... Target for ion capture, 9 ... Magnetic shield, 9a, 9b, 9c: magnetic shield opening, 1
0: vacuum exhaust device, 11: gas injection chamber, 11a: gas inlet, 11b: gas exhaust port, 13: electron gun storage container, 1
4 ... ion / neutral gas storage unit, 15 ... electron generating filament for ion generation, 16 ... ion gas inlet, 17 ...
Ion extraction electrode, 18: electron capture target, 19: electron beam upstream opening, 20: electron beam downstream opening, 21 ...
Coil for generating magnetic field, 22 ... Coil power supply for generating magnetic field, 23
... Ion beam upstream aperture, 24 ... Ion beam downstream aperture, 25 ... Ion collector ammeter, 26 ... Ion capture target ammeter, 27 ... Cathode voltage regulator, 28 ... Filament voltage and current regulator, 29 ... For magnetic field generator Magnetic field adjusting device, 30: thickness gauge, 31: thickness gauge control device, 32
... Electron gun feedback control device, 33 ... Electron beam deflection coil, 34 ... Power supply for deflection coil, 35 ... Crucible,
36: evaporation substance, 37: evaporation plate, 38: vacuum container.

Claims (8)

[Claims] 1. An electron gun having an ion trap around a trajectory of an electron beam.
Magnetic field generating means arranged on the side of the electron beam trajectory; and ground potential ion capture arranged at a position upstream of the electron beam from the magnetic field generating means and at a position shifted laterally from the electron beam trajectory. An electron gun comprising: a target for use; and magnetic shield means covering the magnetic field generating portion and having an opening at a site where the electron beam passes. 2. The electron gun according to claim 1, wherein the center of the magnetic field generating means is eccentric with respect to the center of the opening. 3. An electron gun according to claim 1, further comprising a vacuum exhaust device for exhausting an atmosphere near the ion capturing target. 4. The gas inflow chamber according to claim 1, wherein the gas inflow chamber passes the electron beam on the downstream side of the electron beam with respect to the magnetic field generation means, and the gas inflow chamber exits from the gas inflow chamber. And a magnetic lens that passes the electron beam. 5. An ion generating apparatus comprising: an ion source; an extraction electrode for ion acceleration disposed downstream of the ion beam from the ion source; and an electron trap disposed downstream of the ion beam from the extraction electrode. A magnetic field generating means disposed on the side of the ion beam trajectory as the electron trap; and a ground potential disposed at a position shifted from the magnetic field generating means on the ion beam upstream side and on the side of the ion beam trajectory. An electron capture target;
A magnetic shield unit having an opening through which the ion beam can pass and covering the magnetic generation unit. 6. A magnetic field generating means disposed on a side of an electron beam orbit, and an ion having a ground potential disposed at a position upstream of the magnetic field generating means and on a side of the electron beam orbit shifted from the magnetic field generating means. An ion trap device comprising: a capture target; magnetic shield means covering the magnetic field generating portion and having an opening allowing passage of the electron beam; and a vacuum exhaust device for exhausting an atmosphere near the ion capture target. 7. A magnetic field generating means disposed on a side of an ion beam orbit, and an electron capture of a ground potential disposed on a position upstream of the magnetic field generating means and on a side of the ion beam orbit. An electron trap device comprising: a target for use; and a magnetic shield unit that covers the magnetic field generation unit and has an opening that allows the passage of the ion beam. 8. An electron gun according to any one of claims 1 to 4, and electron beam deflecting means for directing an electron beam from said electron gun to a vaporized substance placed in a crucible in a vacuum vessel. A vapor deposition apparatus including a region for mounting a vapor deposition plate in the vacuum vessel above the crucible.