JPH11160299A - Apparatus for capturing semiconductor contaminant substance - Google Patents
Apparatus for capturing semiconductor contaminant substanceInfo
- Publication number
- JPH11160299A JPH11160299A JP32807897A JP32807897A JPH11160299A JP H11160299 A JPH11160299 A JP H11160299A JP 32807897 A JP32807897 A JP 32807897A JP 32807897 A JP32807897 A JP 32807897A JP H11160299 A JPH11160299 A JP H11160299A
- Authority
- JP
- Japan
- Prior art keywords
- air
- substance
- adsorbed
- semiconductor
- silicon powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Sampling And Sample Adjustment (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、半導体汚染物質を
ガスクロマトグラフ分析する場合のサンプルの捕集方法
装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for collecting a sample when performing gas chromatographic analysis of a semiconductor contaminant.
【0002】特に半導体の特性に影響を及ぼす汚染物質
を選択的に効率よく捕集することにより、高い分析感度
を提供することを特徴としている。In particular, the present invention is characterized by providing high analytical sensitivity by selectively and efficiently collecting contaminants which affect the characteristics of semiconductors.
【0003】[0003]
【従来の技術】従来空気中の汚染物質を捕集する方法と
して、テナックスと呼ばれる吸着物質やグラスウールな
どをガラス管や石英管に充填したものに空気を通過さ
せ、そこに汚染物質を吸着させて捕集した後、ガラス管
または石英管自体を加熱し、吸着した汚染物質をガスク
ロマトグラフへ導入し分析する方法がある。この方法は
公知であり、最も多く用いられている方法である。2. Description of the Related Art Conventionally, as a method for trapping pollutants in air, air is passed through a glass tube or quartz tube filled with an adsorbent called glass or wool, and the contaminants are adsorbed there. After collection, there is a method in which the glass tube or the quartz tube itself is heated, and the adsorbed contaminants are introduced into a gas chromatograph for analysis. This method is known and is the most frequently used method.
【0004】しかしこの方法では空気自体に含まれる全
ての物質を吸着させる為、一般的な環境分析の方法とし
ては優れているが、半導体産業での捕集方法としてはい
くつかの問題点を有している。半導体産業で問題となる
汚染物質は空気中に含まれる物質の中でもシリコンに選
択的に吸着する物質であり、エステル系化合物やシロキ
サン系化合物はその代表である。従来の方法では、シリ
コンにはほとんど吸着せず、しかもクリーンルームには
多量に存在する物質を多量に吸着する為、前記の選択的
に吸着しなければならない物質の捕集効率を低下させ、
分析の検出感度を低下させるといった問題があった。However, this method is excellent as a general environmental analysis method because it absorbs all substances contained in the air itself, but has several problems as a collection method in the semiconductor industry. doing. Pollutants that pose a problem in the semiconductor industry are substances that selectively adsorb to silicon among substances contained in air, and ester-based compounds and siloxane-based compounds are representative thereof. In the conventional method, it is hardly adsorbed on silicon, and furthermore, it adsorbs a large amount of a substance present in a clean room, so that the collection efficiency of the substance that must be selectively adsorbed is reduced,
There was a problem that the detection sensitivity of analysis was reduced.
【0005】[0005]
【発明が解決しようとする課題】本発明は空気中に微量
に存在し、しかもシリコンに選択的に吸着する汚染物質
のみを効率的に捕集し、高い検出感度の分析方法を提供
することを目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to provide a method for efficiently collecting only contaminants which are present in a trace amount in the air and which selectively adsorb to silicon, and which have high detection sensitivity. Aim.
【0006】[0006]
【課題を解決するための手段】本発明は,空気中の半導
体汚染物質を捕集する方法において、吸着物質としてシ
リコン粉末を充填したサンプリング管に空気を通過させ
て捕集する装置である。SUMMARY OF THE INVENTION The present invention relates to a method for trapping semiconductor contaminants in air, which is an apparatus for trapping air by passing air through a sampling tube filled with silicon powder as an adsorbent.
【0007】[0007]
【作用】本発明の捕集装置を用いる事で、半導体汚染物
質のガスクロマトグラフ質量分析における検出感度を1
0倍以上にすることが可能となる。By using the trapping device of the present invention, the detection sensitivity of semiconductor contaminants in gas chromatography / mass spectrometry can be increased by one.
It becomes possible to make it 0 times or more.
【0008】[0008]
【発明の実施の形態】以下、本発明の実施例を示す。図
1は本発明の捕集方法を示す図である。本発明は石英管
2の中に、100〜500μmに粉砕したシリコン粉末
3を充填する。石英管の一方は空気吸入口1として用
い、もう一方をポンプ4と接続する事により本発明の捕
集システムを構成する。Embodiments of the present invention will be described below. FIG. 1 is a diagram showing the trapping method of the present invention. In the present invention, a quartz tube 2 is filled with silicon powder 3 crushed to 100 to 500 μm. One of the quartz tubes is used as an air suction port 1 and the other is connected to a pump 4 to constitute the collection system of the present invention.
【0009】前記システムのポンプ4を駆動すると空気
は空気吸入口1より吸入され、シリコン粉末3の中を通
過する。この際、空気中特にシリコンに選択的に吸着さ
れるエステル系化合物やシロキサン系化合物などがシリ
コン粉末に効率的に吸着され、半導体産業で問題とはな
らず空気中に多量に含まれる不要な化合物は吸着されず
に空気とともに排気として排出される。シリコン粉末3
には半導体産業で問題とならない化合物はほとんど吸着
されない為、問題となる化合物の吸着のみでシリコン粉
末3が飽和するまで吸着は可能となる。この結果、従来
と比べ多量の捕集が可能となる。ここで用いるシリコン
粉末は細かいほど表面積は増加する為多量の吸着が可能
となる反面、空気の流量は低下する為多量の空気を吸入
することが困難となる。またシリコン粉末3を通過する
速度に応じて化合物により吸着する効率が変化する事か
らシリコン粉末の径は100〜500μmが最適であ
る。流速1リッター/分にて積算20リッターで捕集作
業は終了する。When the pump 4 of the system is driven, air is sucked from the air inlet 1 and passes through the silicon powder 3. At this time, ester-based compounds and siloxane-based compounds that are selectively adsorbed in the air, especially on silicon, are efficiently adsorbed on the silicon powder, and do not pose a problem in the semiconductor industry and are unnecessary compounds contained in the air in large amounts. Is not adsorbed and is discharged as exhaust gas together with air. Silicon powder 3
Since almost no compounds that do not cause a problem in the semiconductor industry are adsorbed, the adsorption of the compound that causes a problem is possible until the silicon powder 3 is saturated. As a result, a larger amount of trapping can be performed than in the past. As the silicon powder used here becomes finer, the surface area increases, so that a large amount of adsorption is possible. On the other hand, the flow rate of air decreases, so that it becomes difficult to inhale a large amount of air. Since the efficiency of adsorption by the compound changes according to the speed of passing through the silicon powder 3, the diameter of the silicon powder is optimally 100 to 500 μm. At a flow rate of 1 liter / minute, the collecting operation is completed with a total of 20 liters.
【0010】前記捕集方法にて捕集した後、シリコン粉
末3を充填した石英管2を図2に示すようにヒーター1
2で囲まれた中に装着する。シリコン粉末を充填した石
英管11にヘリウムガスを50cc/分で流し、ヒータ
ー12で30分間、400℃に加熱することでシリコン
粉末3に吸着された汚染物質は完全に脱離し、コールド
トラップ13に導かれる。この時、液体窒素冷却部及び
ヒーター部14を液体窒素で−40℃に冷却する事でコ
ールドトラップ13に汚染物質は完全にトラップされ
る。次に液体窒素冷却部及びヒーター部14を高周波に
より250℃に急激に加熱するとコールドトラップから
は濃縮された汚染物質が脱離しガスクロマトグラフ部1
5の分離カラム16へ導入される。汚染物質は分離カラ
ム16の中で各成分ごとに分離し、順次質量分析部17
に導かれ質量分析されてその定性と定量が可能となる。After being collected by the above-mentioned collecting method, the quartz tube 2 filled with the silicon powder 3 is heated as shown in FIG.
Attach it while surrounded by 2. Helium gas is flowed through the quartz tube 11 filled with silicon powder at a flow rate of 50 cc / min and heated to 400 ° C. for 30 minutes by the heater 12, whereby the contaminants adsorbed on the silicon powder 3 are completely desorbed. Be guided. At this time, contaminants are completely trapped in the cold trap 13 by cooling the liquid nitrogen cooling unit and the heater unit 14 to -40 ° C. with liquid nitrogen. Next, when the liquid nitrogen cooling unit and the heater unit 14 are rapidly heated to 250 ° C. by high frequency, concentrated contaminants are desorbed from the cold trap and the gas chromatograph unit 1 is removed.
5 into the separation column 16. The contaminants are separated for each component in the separation column 16 and the mass spectrometer 17
, And mass spectrometry is performed to enable qualitative and quantitative determination.
【0011】[0011]
【発明の効果】以上のように本発明の捕集装置を用いる
事で、半導体汚染物質のガスクロマトグラフ質量分析に
おける検出感度を10倍以上にすることが可能となっ
た。As described above, the use of the trapping device of the present invention makes it possible to increase the detection sensitivity of semiconductor contaminants by gas chromatography / mass spectrometry to 10 times or more.
【図1】本発明の実施例による半導体汚染物質の捕集装
置を示す図。FIG. 1 is a view showing an apparatus for collecting semiconductor contaminants according to an embodiment of the present invention.
【図2】本発明の実施例による半導体汚染物質の分析方
法を示す図。FIG. 2 is a view showing a method of analyzing semiconductor contaminants according to an embodiment of the present invention.
【図3】従来の実施例による半導体汚染物質の捕集装置
を示す図。FIG. 3 is a diagram showing an apparatus for collecting semiconductor contaminants according to a conventional embodiment.
1 空気吸入口 2 石英管 3 シリコン粉末 4 ポンプ 5 排気 11 シリコン粉末を充填した石英管 12 ヒーター 13 コールドトラップ 14 液体窒素冷却部及びヒーター部 15 ガスクロマトグラフ部 16 分離カラム 17 質量検出部 21 空気吸入口 22 ガラス管 23 グラスウール 24 ポンプ 25 排気 DESCRIPTION OF SYMBOLS 1 Air inlet 2 Quartz tube 3 Silicon powder 4 Pump 5 Exhaust 11 Quartz tube filled with silicon powder 12 Heater 13 Cold trap 14 Liquid nitrogen cooling unit and heater unit 15 Gas chromatograph unit 16 Separation column 17 Mass detector 21 Air inlet 22 glass tube 23 glass wool 24 pump 25 exhaust
Claims (1)
おいて、吸着物質としてシリコン粉末を充填したサンプ
リング管に空気を通過させて捕集する事を特徴とする半
導体汚染物質の捕集装置。1. A method for collecting semiconductor contaminants in air, wherein the air is collected through a sampling tube filled with silicon powder as an adsorbent and collected.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32807897A JPH11160299A (en) | 1997-11-28 | 1997-11-28 | Apparatus for capturing semiconductor contaminant substance |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32807897A JPH11160299A (en) | 1997-11-28 | 1997-11-28 | Apparatus for capturing semiconductor contaminant substance |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH11160299A true JPH11160299A (en) | 1999-06-18 |
Family
ID=18206274
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP32807897A Withdrawn JPH11160299A (en) | 1997-11-28 | 1997-11-28 | Apparatus for capturing semiconductor contaminant substance |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH11160299A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014106159A (en) * | 2012-11-28 | 2014-06-09 | Fis Inc | Gas component adsorption tube, gas component sampling device, and gas component sampling method |
CN111128418A (en) * | 2020-01-02 | 2020-05-08 | 中国原子能科学研究院 | Method and system for detecting cold trap purification performance |
-
1997
- 1997-11-28 JP JP32807897A patent/JPH11160299A/en not_active Withdrawn
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014106159A (en) * | 2012-11-28 | 2014-06-09 | Fis Inc | Gas component adsorption tube, gas component sampling device, and gas component sampling method |
CN111128418A (en) * | 2020-01-02 | 2020-05-08 | 中国原子能科学研究院 | Method and system for detecting cold trap purification performance |
CN111128418B (en) * | 2020-01-02 | 2022-04-08 | 中国原子能科学研究院 | Method and system for detecting cold trap purification performance |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20050201 |