JPH11150142A - Method and device for inspecting wiring bonding - Google Patents

Method and device for inspecting wiring bonding

Info

Publication number
JPH11150142A
JPH11150142A JP9317298A JP31729897A JPH11150142A JP H11150142 A JPH11150142 A JP H11150142A JP 9317298 A JP9317298 A JP 9317298A JP 31729897 A JP31729897 A JP 31729897A JP H11150142 A JPH11150142 A JP H11150142A
Authority
JP
Japan
Prior art keywords
wire
image
illumination light
electrode
inspection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9317298A
Other languages
Japanese (ja)
Inventor
Nobumichi Kawahara
信途 川原
Hirofumi Hirashima
浩文 平島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP9317298A priority Critical patent/JPH11150142A/en
Publication of JPH11150142A publication Critical patent/JPH11150142A/en
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624Aluminium [Al] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48599Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/859Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To make an electrode pattern section and a wire section easily distinguishable from each other by having an inspection area irradiated with light having such a spectrum that reflectivity is low on the surfaces of wires and high at an electrode section, and analyzing images formed by the reflection of the light. SOLUTION: Light projected upon an object to be inspected is reflected by an electrode section 51 and a ball section 54 and forms an image in an image-pickup device. When the light has a wavelength of <=550 nm, light 52 projected upon the electrode section 51 is of high reflection, and light 53 projected upon the ball section 54 is of low reflection, because the electrode section 51 is formed of an aluminum pattern and wires 55 are made of gold. When the object is irradiated with light having a wavelength of >=550 nm on the other hand, both the electrode section 51 and the ball section 54 shows high reflection the light, and both the electrode and the ball sections 51 and 54 become bright in the image. Therefore, the electrode and the ball sections 51 and 54 are easily distinguishable from each other by comparing these images.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、ワイヤボンディン
グ後の半導体装置の外観検査を行う検査方法および装置
に係るものであり、特に金ワイヤを用いたワイヤボンデ
ィングの外観検査に適したワイヤボンディング検査方法
および装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an inspection method and apparatus for inspecting the appearance of a semiconductor device after wire bonding, and more particularly, to a method for inspecting the appearance of wire bonding using a gold wire. And devices.

【0002】[0002]

【従来の技術】従来、ボンデイング後の外観検査はもっ
ぱら検査作業者による目視検査によって行われており、
光学式の顕微鏡ないしは拡大機能をもった撮像装置によ
ってボンデンィング工程を終了した半導体装置の像を観
察し、定性的に良否判定を行う方法が取られていた。近
年、例えば特開平5−121512号公報に示されるよ
うに、検査対象である半導体装置の正常な状態をデータ
として記憶装置に記憶させた上で、撮像装置と半導体装
置を相対的に移動させて外観画像を取り込み、取り込ま
れた外観画像を画像処理装置によって解析して半導体装
置の構成要素であるリードフレーム、半導体チップ(以
下チップと呼ぶ)、ボンディングワイヤ等の輪郭を抽出
処理し、それぞれの構成要素の位置、形状を捕えた後に
前記各構成要素に対して予め設定された良否判定基準と
比較してボンディングの状態の良否を判定する技術が報
告されている。
2. Description of the Related Art Conventionally, appearance inspection after bonding has been performed exclusively by visual inspection by an inspection operator.
A method has been adopted in which an image of a semiconductor device after the bonding step is completed is observed with an optical microscope or an imaging device having a magnifying function, and quality is qualitatively determined. In recent years, as shown in, for example, Japanese Patent Application Laid-Open No. 5-121512, a normal state of a semiconductor device to be inspected is stored in a storage device as data, and then the imaging device and the semiconductor device are relatively moved. An external image is captured, and the captured external image is analyzed by an image processing apparatus to extract outlines of components such as a lead frame, a semiconductor chip (hereinafter, referred to as a chip), bonding wires, and the like, which are components of the semiconductor device. A technique has been reported in which after determining the position and shape of the element, the quality of the bonding state is determined by comparing with a predetermined quality determination criterion for each of the constituent elements.

【0003】図7は上記従来例の構成を示す図であっ
て、試料台2に載置された被検物1である半導体装置に
対してハーフミラー21を通して照射される落射照明用
の光源11と複数の照射角度を有するリング照明用光源
12を順次切換えながら、駆動ステージ3によって駆動
される撮像装置31によって画像を取り込み、取り込ま
れた画像を画像解析装置43によって二値化ないしは多
値化処理によって解析処理を加え、ワイヤ部の形状及び
位置を算出するものである。
FIG. 7 is a view showing the configuration of the above-mentioned conventional example. A light source 11 for epi-illumination that irradiates a semiconductor device, which is a test object 1, mounted on a sample table 2 through a half mirror 21. While sequentially switching between the ring illumination light source 12 having a plurality of irradiation angles and the image pickup device 31, an image is captured by the imaging device 31 driven by the drive stage 3, and the captured image is binarized or multi-valued by the image analysis device 43. The analysis process is performed to calculate the shape and position of the wire portion.

【0004】また、特開平7−58500号公報では、
プリント基板上の配線パターンのみを抽出するために基
板上の銅電極部と電子部品のアルミ電極部とで反射率の
異なるように650nm以下の照明光を用いて、画像の
取り込みを行う例が示されており、さらに、特開平8−
29138号公報では半球ドーム形状に配置されたLE
Dでプリント基板を照明してパターンの欠陥検査を行う
例が報告されている。
In Japanese Patent Application Laid-Open No. 7-58500,
In order to extract only a wiring pattern on a printed circuit board, an example is shown in which an image is captured using illumination light of 650 nm or less so that the reflectance is different between the copper electrode part on the board and the aluminum electrode part of the electronic component. And Japanese Patent Laid-Open No. 8-
Japanese Patent No. 29138 discloses an LE arranged in a hemispherical dome shape.
An example in which a pattern defect inspection is performed by illuminating a printed board with D has been reported.

【0005】[0005]

【発明が解決しようとする課題】しかるに上記従来例に
おいて、例えば特開平5−121512号公報に示され
るようなワイヤボンディング検査装置の場合、照明光源
については特に規定がなされておらず一般には白色電球
等の光源装置を用いるか、あるいは比較的高い輝度を得
ることが容易である赤色LEDが用いられているため
に、半導体装置上に電極部を形成しているアルミパター
ンと、ワイヤ部の金線部との反射特性には差異が少な
く、電極部上の輝点とワイヤ上の輝点を誤認識するとい
った欠点があった。
However, in the above conventional example, in the case of a wire bonding inspection apparatus as disclosed in, for example, Japanese Patent Application Laid-Open No. 5-121512, the illumination light source is not particularly specified, and a white light bulb is generally used. Because a red light LED that can easily obtain a relatively high luminance is used, or an aluminum pattern forming an electrode portion on a semiconductor device, and a gold wire of a wire portion are used. There is a small difference in the reflection characteristics with respect to the portion, and there is a defect that the bright spot on the electrode portion and the bright spot on the wire are erroneously recognized.

【0006】図4はワイヤボンディングされた半導体装
置の表面を側面から拡大して観察した状態を示している
が、同図において51は半導体装置表面の電極部、54
はボンディングされたワイヤー部55のボール部を示し
ている。
FIG. 4 shows a state in which the surface of the wire-bonded semiconductor device is enlarged and observed from the side. In FIG. 4, reference numeral 51 denotes an electrode portion on the surface of the semiconductor device;
Indicates a ball portion of the bonded wire portion 55.

【0007】ここで、ボール部54は半導体装置上に圧
着される際に図示しないキャピラリの先端部とチップの
表面との間に挟まれるために、図4に示すように電極部
51とほぼ平行な平面部が形成される。
Here, since the ball portion 54 is sandwiched between the tip of the capillary (not shown) and the surface of the chip when it is crimped on the semiconductor device, it is substantially parallel to the electrode portion 51 as shown in FIG. A flat surface portion is formed.

【0008】一方、ボンディング部を観察するために落
射照明を使用した場合、照明光52,53は電極部51
に対して垂直に入射して正反射し、撮像装置31上に結
像することとなるので、電極部51で反射した照明光5
2とボール部54の平面部で反射した照明光53とは同
じ条件で撮像装置31上に結像し、図5(a)に示すよ
うな画像が形成される。
On the other hand, when epi-illumination is used to observe the bonding portion, the illumination light 52, 53
To the illumination light 5 reflected by the electrode unit 51 because the light is perpendicularly reflected and specularly reflected to form an image on the imaging device 31.
2 and the illumination light 53 reflected on the flat portion of the ball portion 54 form an image on the imaging device 31 under the same conditions, and an image as shown in FIG. 5A is formed.

【0009】ここで図5(a)に示す画像では電極部5
1とボール部54の平面部分は同様に高輝度部分として
捕えられるために、画像解析装置43によって画像解析
を行なう際に両者の識別が困難であり、ボール部の形状
または位置を誤って認識することが多い。
Here, in the image shown in FIG.
1 and the flat portion of the ball portion 54 are similarly captured as high-luminance portions, so that it is difficult to identify the two when performing image analysis by the image analysis device 43, and to incorrectly recognize the shape or position of the ball portion. Often.

【0010】また、特開平7−58500B号公報で
は、検査対象がプリント基板上の配線パターンであるた
め、基板上の銅電極部と電子部品のアルミ電極部とが認
識可能な照明光が用いられており、ボンディングワイヤ
の検査には適用することができず、更に、特開平8−2
9138号公報ではいわゆる暗視野照明または拡散照明
として、半球ドーム形状に配置した構造についての例を
示しているに過ぎず、電極部とワイヤ部の識別性能の向
上を望むことはできない。
In Japanese Patent Application Laid-Open No. 7-58500B, since the object to be inspected is a wiring pattern on a printed circuit board, illumination light that can recognize the copper electrode section on the board and the aluminum electrode section of the electronic component is used. Therefore, the method cannot be applied to the inspection of the bonding wire.
No. 9138 merely shows an example of a structure arranged in a hemispherical dome shape as so-called dark-field illumination or diffuse illumination, and it cannot be desired to improve the discrimination performance between the electrode portion and the wire portion.

【0011】本発明は、上記従来の技術の有する問題点
に鑑みてなされたものであって、チップ上の電極パター
ン部とワイヤ部との識別を容易に行うことの可能な画像
の取り込みを可能とする照明光で照明して検査を行うワ
イヤボンディング検査方法および装置を提供することを
課題としており、また、白色照明光を発する光源を用い
た場合であっても、チップ上の電極パターン部とワイヤ
部との識別を容易に行うことの可能な画像の取り込みを
可能とすることを課題としている。
SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems of the related art, and has been made capable of capturing an image in which an electrode pattern portion and a wire portion on a chip can be easily identified. It is an object of the present invention to provide a wire bonding inspection method and apparatus for performing an inspection by illuminating with an illumination light, and even when a light source that emits white illumination light is used, an electrode pattern portion on a chip and An object of the present invention is to enable capturing of an image that can be easily distinguished from a wire portion.

【0012】[0012]

【課題を解決するための手段】本発明は、上記従来の技
術の有する問題点を次のようにして解決した。
SUMMARY OF THE INVENTION The present invention has solved the above-mentioned problems of the prior art as follows.

【0013】検査領域をワイヤ表面での反射率が低く、
かつ電極部での反射率が高いスペクトルを有する照明光
で照射し、該照明光の反射によって形成される画像を解
析することによってボンディングの状態を検査する。さ
らに詳しくは、前記検査領域をワイヤ表面での反射率が
低く、かつ電極部での反射率が高いスペクトルを有する
波長領域における観察画像と、ワイヤ表面及び電極部で
の反射率が高いスペクトルを有する波長領域における観
察画像とを比較することによって電極部とワイヤ部とを
識別する。
The inspection area has a low reflectance on the wire surface,
In addition, the state of bonding is inspected by irradiating with illumination light having a spectrum having a high reflectance at the electrode portion and analyzing an image formed by reflection of the illumination light. More specifically, the inspection area has an observation image in a wavelength region having a low reflectance at the wire surface and a high reflectance at the electrode portion, and a spectrum having a high reflectance at the wire surface and the electrode portion. The electrode portion and the wire portion are identified by comparing the observation image in the wavelength region.

【0014】[0014]

【発明の実施の形態】本発明によるワイヤボンデイング
検査方法は、ワイヤ表面での反射率が低く、かつ電極部
での反射率が高いスペクトルを有する照明光によって検
査領域を照明して、前記照明光の反射によって形成され
る画像を取り込むことを特徴としており、電極部とワイ
ヤ部の両者に照明光を反射させる条件が揃っている場合
であっても、電極部では高反射が得られ、ワイヤ部では
低い反射となり電極部の画像とワイヤ部の画像とを容易
に識別することが可能となる。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The wire bonding inspection method according to the present invention illuminates an inspection area with illumination light having a spectrum having a low reflectance on a wire surface and a high reflectance on an electrode portion. It is characterized by taking in an image formed by reflection of light, and even if conditions for reflecting illumination light to both the electrode portion and the wire portion are equal, high reflection is obtained at the electrode portion, and the wire portion is obtained. In this case, the reflection becomes low, and the image of the electrode portion and the image of the wire portion can be easily distinguished.

【0015】また、前記検査領域をワイヤ表面での反射
率が低く、かつ電極部での反射率が高いスペクトルを有
する波長領域における観察画像と、ワイヤ表面及び電極
部での反射率が高いスペクトルを有する波長領域におけ
る観察画像とを比較することによって電極部とワイヤ部
とを識別することを特徴としており、電極部の画像が変
化せずにワイヤ部の画像が変化した2種類の画像を比較
することによって、ワイヤ部のみを識別することが可能
となる。
[0015] Further, the inspection area is formed by an observation image in a wavelength region having a spectrum having a low reflectance on the wire surface and a high reflectance on the electrode portion, and a spectrum having a high reflectance on the wire surface and the electrode portion. It is characterized by discriminating between the electrode portion and the wire portion by comparing the observation image in the wavelength region having the image portion, and comparing two types of images in which the image of the wire portion has changed without changing the image of the electrode portion. This makes it possible to identify only the wire portion.

【0016】本発明によるワイヤボンデイング検査装置
は、ワイヤボンデイングされた半導体チップ及びリード
フレームを搭載する搭載手段と、被検査領域を照明する
ための照明装置と、ワイヤを撮像して画像信号を得る撮
像手段と、画像解析装置とからなり、前記画像信号に基
づいてボンディングの状態を検査するボンディングワイ
ヤ検査装置であって、前記照明装置が、前記検査領域を
ワイヤ表面での反射率が低く、かつ電極部での反射率が
高いスペクトルを有する照明光で照射することを特徴と
する。
A wire bonding inspection apparatus according to the present invention comprises: mounting means for mounting a wire-bonded semiconductor chip and a lead frame; an illuminating device for illuminating a region to be inspected; and an imaging device for imaging a wire to obtain an image signal. Means for inspecting a bonding state based on the image signal, wherein the lighting device has a low reflectance on the wire surface in the inspection area, and an electrode. It is characterized by irradiating with illumination light having a spectrum with a high reflectance at the portion.

【0017】前記画像解析装置は、前記検査領域をワイ
ヤ表面での反射率が低く、かつ電極部での反射率が高い
スペクトルを有する波長領域における観察画像と、ワイ
ヤ表面及び電極部での反射率が高いスペクトルを有する
波長領域における観察画像とを比較することによって電
極部とワイヤ部とを識別することを特徴とする。
[0017] The image analysis device may include an observation image in the wavelength region having a spectrum in which the reflectance on the wire surface is low and the reflectance on the electrode portion is high, and the reflectance on the wire surface and the electrode portion. Is characterized in that the electrode part and the wire part are distinguished by comparing with an observation image in a wavelength region having a high spectrum.

【0018】前記照明光を発生させる光源として青色L
EDを使用していることを特徴とする。
As a light source for generating the illumination light, blue L
ED is used.

【0019】前記照明光を発生させる光源として白色光
源を使用し、照明光または反射光の光路中に波長フィル
タを挿入することによって青色の照明光によって照明を
行うか、あるいは反射光の中から青色の波長領域を選択
的に抽出して使用することを特徴とする。
A white light source is used as a light source for generating the illumination light, and a wavelength filter is inserted into an optical path of the illumination light or the reflected light to perform illumination with blue illumination light, or a blue light is selected from the reflected light. Is selectively extracted and used.

【0020】[0020]

【実施例】(第1の実施例)図1は、本発明の特徴を最
もよく表す図面であり、以下、同図をおいて本発明によ
るワイヤボンディング検査装置(以下、本装置と呼ぶ)
について説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) FIG. 1 is a drawing that best illustrates the features of the present invention. Hereinafter, a wire bonding inspection apparatus according to the present invention (hereinafter, referred to as the present apparatus) will be described with reference to FIG.
Will be described.

【0021】図1において1は被検物、2は被検物1を
移動させるための検査ステージ(以下、ステージと呼
ぶ)、5は撮像系の焦点深度及び光量を調整する絞り装
置、6は照明光量及び照明波長を調整するための光学調
整装置、11は照明光を発生させる光源(白色光源)、
31は被検物1の像を捕えるための撮像装置、7はコン
デンサレンズ、21はハーフミラー、41は入力装置4
2に接続され装置全体の制御を行うコントローラ、43
は撮像装置31によって捕えられた像に演算処理を加え
るための画像解析装置である。なお、44は撮像素子駆
動回路、45はランプ電源回路、46はアクチュエータ
駆動回路、47はステージ駆動回路である。
In FIG. 1, reference numeral 1 denotes a test object, 2 denotes an inspection stage for moving the test object 1 (hereinafter, referred to as a stage), 5 denotes an aperture device for adjusting the depth of focus and light quantity of an image pickup system, and 6 denotes a diaphragm device. An optical adjustment device for adjusting an illumination light amount and an illumination wavelength, 11 a light source (white light source) for generating illumination light,
31 is an imaging device for capturing an image of the test object 1, 7 is a condenser lens, 21 is a half mirror, 41 is an input device 4.
A controller 43 connected to the controller 2 for controlling the entire apparatus;
Is an image analysis device for adding arithmetic processing to the image captured by the imaging device 31. Reference numeral 44 denotes an image sensor driving circuit, 45 denotes a lamp power supply circuit, 46 denotes an actuator driving circuit, and 47 denotes a stage driving circuit.

【0022】被検物1は図示しない搬送装置によってス
テージ2上に搬送された後に固定され、コントローラ4
1の指令によって事前に規定された位置へ移動する。一
方、光源11より出射した照明光はコンデンサレンズ7
を通過した後に、光学調整装置6によって選択的に抽出
された波長が550nm以下である青色の照明光がハー
フミラー21を介して被検物1上に照射されるようにな
っている。
The test object 1 is fixed after being transferred onto the stage 2 by a transfer device (not shown).
It moves to a position specified in advance by the instruction 1. On the other hand, the illumination light emitted from the light source 11 is
After that, blue illumination light having a wavelength of 550 nm or less selectively extracted by the optical adjustment device 6 is irradiated onto the test object 1 via the half mirror 21.

【0023】被検物1上に照射された照明光は図4に示
すごとく、従来例と同様に電極部51とボール部54上
で反射され再びハーフミラー21を介して撮像装置31
上に結像するが、このとき、一般に照明光は被検物の材
質によって図6に示すような反射特性を示す性質があ
る。図6において62はアルミの分光反射率、63は銅
の分光反射率、64は金の分光反射率を示しており、同
図によれば550nm以下の波長領域では、アルミの反
射率は他の波長とほぼ変化がなく高い反射率を示してい
るのに対して、金の反射率は急激に低下していることが
わかる。
As shown in FIG. 4, the illuminating light radiated onto the test object 1 is reflected on the electrode portion 51 and the ball portion 54 as in the conventional example, and is again reflected by the image pickup device 31 via the half mirror 21.
At this time, the illumination light generally has a property of exhibiting a reflection characteristic as shown in FIG. 6 depending on the material of the test object. 6, 62 indicates the spectral reflectance of aluminum, 63 indicates the spectral reflectance of copper, and 64 indicates the spectral reflectance of gold. According to FIG. 6, in the wavelength region of 550 nm or less, the reflectance of aluminum is other than that. It can be seen that while the reflectance is high with almost no change in the wavelength, the reflectance of gold sharply decreases.

【0024】一方、チップ上の電極部は一般にアルミパ
ターンによって形成されており、ボールボンディングに
用いられるワイヤには金線が使用されているために、上
記の構成によって550nm以下の照明光を照射した場
合には図4における電極部51に照射された照明光52
の反射は高反射となるが、ボール部54照射された照明
光53の反射が低反射となってしまい、また、チップ上
の電極部以外の絶縁部56は反射率の低い材質で形成さ
れているために撮像装置31によって捕えられる画像は
図5(b)に示すように、電極部のみが明るく浮かび上
がった状態となる。
On the other hand, the electrode portion on the chip is generally formed of an aluminum pattern, and a gold wire is used for the wire used for ball bonding. In this case, the illumination light 52 applied to the electrode unit 51 in FIG.
Is high reflection, but the reflection of the illumination light 53 irradiated on the ball portion 54 is low reflection, and the insulating portion 56 other than the electrode portion on the chip is formed of a material having a low reflectance. As a result, the image captured by the imaging device 31 has a state in which only the electrode portions are brightly raised as shown in FIG. 5B.

【0025】続いて、光学調整装置6はコントローラ4
1の指示によって550nmを超える波長の光を透過す
るように設定が変更され、上記と同様の手順で被検物1
の画像を撮像装置31によって取り込むと、図6の反射
特性にしたがって、電極部51とボール部54はいずれ
も高い反射率を示すのに対して、絶縁部56は550n
mを超える波長においても反射率が低いために、今度は
図5(a)に示すように電極部51上とボール部54上
の平面が明部として捕えられる。
Subsequently, the optical adjustment device 6 is controlled by the controller 4
In accordance with the instruction of No. 1, the setting is changed so that light of a wavelength exceeding 550 nm is transmitted.
6 is captured by the imaging device 31, according to the reflection characteristics of FIG. 6, both the electrode portion 51 and the ball portion 54 exhibit high reflectance, whereas the insulating portion 56 has 550n.
Since the reflectance is low even at a wavelength exceeding m, the flat surface on the electrode portion 51 and the ball portion 54 is captured as a bright portion as shown in FIG.

【0026】ただしこのとき、撮像装置31は一般に5
50nm以下の波長領域において感度が低下する特徴を
もっており、また白色光源である光源11についても5
50nm以下の波長領域において発光強度が低下する特
性をもっているために、撮像装置31によって取り込ま
れる画像のコントラストを良好な状態にするためには光
源11の照明光量を550nmを超える波長の照明を使
用する場合と比較して増大させる必要性がある。したが
って本装置においては画像を取り込む前に、撮像装置3
1の画像照度及び画像の輝度分布の分散を画像解析装置
43によって算出し、予め設定された閾値に達するよう
にランプ電源回路45を制御して、自動的に光源11の
照明強度を調整可能としている。
At this time, however, the imaging device 31 is generally 5
The sensitivity is reduced in a wavelength region of 50 nm or less.
Since the emission intensity is reduced in a wavelength region of 50 nm or less, an illumination light having a wavelength exceeding 550 nm is used as the illumination light amount of the light source 11 in order to maintain a good contrast of an image captured by the imaging device 31. There is a need to increase it compared to the case. Therefore, in this apparatus, before capturing an image,
The image illuminance and the variance of the luminance distribution of the image are calculated by the image analyzer 43, and the lamp power supply circuit 45 is controlled so as to reach a preset threshold value, so that the illumination intensity of the light source 11 can be automatically adjusted. I have.

【0027】更に撮像系を構成している光学素子につい
て言えば、色収差によって550nm以下波長の照明光
を用いた場合と550nmを超える波長の照明光を用い
た場合とでは、焦点位置にずれが生じる場合が発生する
ため、本装置においては実際に使用する照明光の波長領
域をそれぞれ100nm以下に制限して450〜550
nmの短波長域と600〜700nmの長波長域の二区
間に分けて使用するとともに、各波長領域の中心波長で
の光学性能がほぼ一致するような、いわゆる色消し処理
をされた撮像系が用いられている。
Further, regarding the optical elements constituting the image pickup system, there is a shift in the focal position between the case where illumination light having a wavelength of 550 nm or less is used and the case where illumination light having a wavelength exceeding 550 nm is used due to chromatic aberration. In this device, the wavelength range of the illumination light actually used is limited to 100 nm or less and 450 to 550 in this apparatus.
An imaging system that has been so-called achromatized so as to be used in two sections of a short wavelength range of 600 nm and a long wavelength range of 600 to 700 nm, and that the optical performance at the center wavelength of each wavelength range substantially matches. Used.

【0028】当然のことながら、色収差によって生じる
焦点ずれ分を見込んで、照明波長領域毎に被検物1と撮
像系との相対距離を自動調整する機能を利用すること
は、本発明の趣旨に反するものではない。
Naturally, the use of the function of automatically adjusting the relative distance between the test object 1 and the imaging system for each illumination wavelength region in anticipation of the defocus caused by chromatic aberration is within the scope of the present invention. Not contrary.

【0029】以上の手順によって取り込まれた図5
(a)の画像と図5(b)の画像は、それぞれ画像解析
装置43へと送られて、まず図5(b)の画像を二値化
しない多値化処理することによって電極部51のみの画
像を抽出し、更に図5(a)の画像を多値化処理するこ
とによって電極部51とボール部54の合成画像を抽出
する。更に電極部51とボール部54の合成画像から電
極部51のみの画像を差し引くことによってボール部5
4のみの画像を容易に抽出することができる。
FIG. 5 captured by the above procedure
The image shown in FIG. 5A and the image shown in FIG. 5B are respectively sent to the image analyzer 43, and the image shown in FIG. 5A is further extracted, and a combined image of the electrode portion 51 and the ball portion 54 is extracted by subjecting the image of FIG. Further, by subtracting the image of only the electrode portion 51 from the composite image of the electrode portion 51 and the ball portion 54, the ball portion 5
Only four images can be easily extracted.

【0030】(第2の実施例)第1の実施例では照明用
の光源として白色光源を用いたが、本実施例では照明用
の光源としてLED光源を用いている。
(Second Embodiment) In the first embodiment, a white light source is used as a light source for illumination. However, in this embodiment, an LED light source is used as a light source for illumination.

【0031】図2において、LED光源15には指向性
の高い赤色LED及び青色LEDが1点に集光するよう
に規則的に配列されており、コントローラ41によって
ランプ電源回路45が制御されて照明光源の色の選択と
照明強度の調整が行われるようになっている。照明光は
1点に集光された後に平行光に形成され、第1の実施例
と同様に被検物1上に照射され、撮像装置31によって
画像の取り込みが行われるようになっている。
In FIG. 2, a red LED and a blue LED having high directivity are regularly arranged in the LED light source 15 so as to converge at one point, and the lamp power supply circuit 45 is controlled by the controller 41 to provide illumination. The selection of the color of the light source and the adjustment of the illumination intensity are performed. The illuminating light is converged on one point, is formed into parallel light, is irradiated on the test object 1 as in the first embodiment, and an image is captured by the imaging device 31.

【0032】(第3の実施例)本実施例では照明用の光
源としてレーザ光源を用いている。
(Third Embodiment) In this embodiment, a laser light source is used as a light source for illumination.

【0033】図3において、レーザ電源48には赤色レ
ーザ光源13と青色レーザ光源14が並列して接続さ
れ、照明光がハーフミラー21,22,23を介して被
検物1上に照射されるようになっている。
In FIG. 3, a red laser light source 13 and a blue laser light source 14 are connected in parallel to a laser power supply 48, and illumination light is applied to the test object 1 via half mirrors 21, 22 and 23. It has become.

【0034】更に、ビームスプリッター24によって5
50nm以下の波長とその他の波長とを分離した上で、
それぞれ撮像装置31および32によって画像を同時に
捕えることが可能となっており、照明光の波長を切換え
る必要がないために撮像にかかる時間を短縮できる構造
となっている。
Further, the beam splitter 24
After separating the wavelength of 50 nm or less from other wavelengths,
Images can be captured at the same time by the imaging devices 31 and 32, respectively, and there is no need to switch the wavelength of illumination light, so that the time required for imaging can be reduced.

【0035】ここで、上記したいずれの実施例において
も落射照明を例にとって説明しているが暗視野照明ない
し拡散照明等においても同様の効果が得られることはい
うまでもなく、図1〜図3は撮像系を構成している光学
素子の配置を限定するものではない。
Here, in each of the above embodiments, the epi-illumination is described as an example. However, it goes without saying that the same effect can be obtained in dark-field illumination or diffuse illumination. Reference numeral 3 does not limit the arrangement of the optical elements constituting the imaging system.

【0036】また、上記実施例ではワイヤの中でも特に
ボール部の画像に注目して説明がなされているが、ワイ
ヤの画像上に存在するすべての輝点について同様の効果
が得られるので、例えばボール部以外のワイヤの水平部
分に観察される輝点とチップ上の電極を識別してワイヤ
の軌跡を算出する際にも有効であることはいうまでもな
い。
In the above embodiment, the description is made with particular attention to the image of the ball portion among the wires. However, the same effect can be obtained for all the luminescent spots present on the image of the wire. It is needless to say that the present invention is also effective in calculating the locus of the wire by identifying the bright spot observed on the horizontal portion of the wire other than the portion and the electrode on the chip.

【0037】[0037]

【発明の効果】以上説明したように本発明による検査方
法および装置によれば、チップ上の電極パターン部とワ
イヤ部との識別を容易に行うことの可能な画像が得られ
る。また、白色照明光を発する光源を用いた場合であっ
ても、チップ上の電極パターン部とワイヤ部との識別を
容易に行うことのできる画像の取り込みが可能となる。
As described above, according to the inspection method and apparatus of the present invention, an image can be obtained which allows the electrode pattern portion on the chip to be easily distinguished from the wire portion. Further, even when a light source that emits white illumination light is used, it is possible to capture an image that can easily identify an electrode pattern portion and a wire portion on a chip.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1の実施例に係るワイヤボンディン
グ検査装置の説明図である。
FIG. 1 is an explanatory diagram of a wire bonding inspection apparatus according to a first embodiment of the present invention.

【図2】本発明の第2の実施例に係るワイヤボンディン
グ検査装置の説明図である。
FIG. 2 is an explanatory diagram of a wire bonding inspection device according to a second embodiment of the present invention.

【図3】本発明の第3の実施例に係るワイヤボンディン
グ検査装置の説明図である。
FIG. 3 is an explanatory diagram of a wire bonding inspection apparatus according to a third embodiment of the present invention.

【図4】被検物上に照射された照明光を示す図である。FIG. 4 is a diagram showing illumination light applied to a test object.

【図5】取り込み画像を示す図であり、(a)は550n
mを超える照明光を照射した場合、(b)は550nm以
下の照明光を照射した場合を示している。
FIG. 5 is a diagram showing a captured image, (a) showing 550n;
(b) shows a case where illumination light having a wavelength of 550 nm or less is applied.

【図6】照明光の特性を示す図である。FIG. 6 is a diagram showing characteristics of illumination light.

【図7】従来のボンディングワイヤ検査装置の説明図で
ある。
FIG. 7 is an explanatory diagram of a conventional bonding wire inspection device.

【符号の説明】[Explanation of symbols]

1 被検物 2 検査ステージ(ステージ) 3 駆動ステージ 5 絞り装置 6 光学調整装置 7 コンデンサレンズ 11 光源 12 光源 13 赤色レーザ光源 14 青色レーザ光源 15 LED光源 21 ハーフミラー 22 ハーフミラー 23 ハーフミラー 24 ビームスプリッター 31 撮像装置 32 撮像装置 41 コントローラ 42 入力装置 43 画像解析装置 44 撮像素子駆動回路 45 ランプ電源回路 46 アクチェータ駆動回路 47 ステージ駆動回路 51 電極部 52 照明光 53 照明光 54 ボール部 55 ワイヤ部 56 絶縁部 61 銀の分光反射率 62 アルミの分光反射率 63 銅の分光反射率 64 金の分光反射率 DESCRIPTION OF SYMBOLS 1 Test object 2 Inspection stage (stage) 3 Drive stage 5 Aperture device 6 Optical adjustment device 7 Condenser lens 11 Light source 12 Light source 13 Red laser light source 14 Blue laser light source 15 LED light source 21 Half mirror 22 Half mirror 23 Half mirror 24 Beam splitter REFERENCE SIGNS LIST 31 imaging device 32 imaging device 41 controller 42 input device 43 image analysis device 44 imaging device drive circuit 45 lamp power supply circuit 46 actuator drive circuit 47 stage drive circuit 51 electrode unit 52 illumination light 53 illumination light 54 ball unit 55 wire unit 56 insulating unit 61 Spectral reflectance of silver 62 Spectral reflectance of aluminum 63 Spectral reflectance of copper 64 Spectral reflectance of gold

Claims (9)

【特許請求の範囲】[Claims] 【請求項1】 画像信号に基づいてボンディングの状態
を検査するボンディングワイヤ検査方法であって、検査
領域をワイヤ表面での反射率が低く、かつ電極部での反
射率が高いスペクトルを有する照明光で照射し、該照明
光の反射によって形成される画像を解析することを特徴
とするワイヤボンディング検査方法。
1. A bonding wire inspection method for inspecting a bonding state based on an image signal, wherein an illumination area has a spectrum having a low reflectance on a wire surface and a high reflectance on an electrode portion in an inspection area. A wire bonding inspection method, wherein an image formed by reflection of the illumination light is analyzed.
【請求項2】 前記照明光は550nm以下の波長であ
ることを特徴とする請求項1記載のワイヤボンディング
検査方法。
2. The wire bonding inspection method according to claim 1, wherein the illumination light has a wavelength of 550 nm or less.
【請求項3】 前記検査領域をワイヤ表面での反射率が
低く、かつ電極部での反射率が高いスペクトルを有する
波長領域における観察画像と、ワイヤ表面及び電極部で
の反射率が高いスペクトルを有する波長領域における観
察画像とを比較することによって電極部とワイヤ部とを
識別することを特徴とする請求項1記載のワイヤボンデ
ィング検査方法。
3. An observation image in a wavelength region having a spectrum having a low reflectance on a wire surface and a high reflectance on an electrode portion, and a spectrum having a high reflectance on a wire surface and an electrode portion. 2. The wire bonding inspection method according to claim 1, wherein the electrode part and the wire part are identified by comparing the observation image in the wavelength region having the electrode part.
【請求項4】 複数の波長領域における観察画像を比較
する際に、それぞれの波長領域の範囲が100nm以下
であることを特徴とする請求項3記載のワイヤボンデイ
ング検査方法。
4. The wire bonding inspection method according to claim 3, wherein, when comparing observation images in a plurality of wavelength regions, the range of each wavelength region is 100 nm or less.
【請求項5】 ワイヤボンデイングされた半導体チップ
及びリードフレームを搭載する搭載手段と、被検査領域
を照明するための照明装置と、ワイヤを撮像して画像信
号を得る撮像手段と、画像解析装置とからなり、前記画
像信号に基づいてボンディングの状態を検査するボンデ
ィングワイヤ検査装置であって、前記照明装置が、前記
検査領域をワイヤ表面での反射率が低く、かつ電極部で
の反射率が高いスペクトルを有する照明光で照射するこ
とを特徴とするワイヤボンディング検査装置。
5. A mounting device for mounting a wire-bonded semiconductor chip and a lead frame, an illuminating device for illuminating a region to be inspected, an imaging device for capturing an image of a wire to obtain an image signal, and an image analyzing device. A bonding wire inspection device for inspecting a bonding state based on the image signal, wherein the illumination device has a low reflectance of the inspection region on a wire surface and a high reflectance of an electrode portion. A wire bonding inspection apparatus characterized by irradiating with illumination light having a spectrum.
【請求項6】 前記画像解析装置は、前記検査領域をワ
イヤ表面での反射率が低く、かつ電極部での反射率が高
いスペクトルを有する波長領域における観察画像と、ワ
イヤ表面及び電極部での反射率が高いスペクトルを有す
る波長領域における観察画像とを比較することによって
電極部とワイヤ部とを識別することを特徴とする請求項
5記載のワイヤボンディング検査装置。
6. The image analysis apparatus according to claim 1, wherein the inspection area includes an observation image in a wavelength region having a spectrum having a low reflectance on a wire surface and a high reflectance on an electrode portion, and an inspection image on the wire surface and the electrode portion. 6. The wire bonding inspection apparatus according to claim 5, wherein the electrode part and the wire part are identified by comparing an observation image in a wavelength region having a spectrum with a high reflectance.
【請求項7】 前記照明光を発生させる光源として青色
LEDを使用していることを特徴とする請求項5または
6記載のワイヤボンディング検査装置。
7. The wire bonding inspection apparatus according to claim 5, wherein a blue LED is used as a light source for generating the illumination light.
【請求項8】 照明用光源として白色光源を使用し、照
明光の光路中に波長フィルタを挿入することによって青
色の照明光を選択的に抽出して使用することを特徴とす
る請求項5または6記載のワイヤボンディング検査装
置。
8. The illumination device according to claim 5, wherein a white light source is used as the illumination light source, and a blue illumination light is selectively extracted and used by inserting a wavelength filter in an optical path of the illumination light. 7. The wire bonding inspection apparatus according to 6.
【請求項9】 照明用光源として白色光源を使用し、前
記白色光源によって照射された検査領域の画像から青色
の反射光を選択的に抽出して使用することを特徴とする
請求項5または6記載のワイヤボンディング検査装置。
9. A white light source is used as an illumination light source, and blue reflected light is selectively extracted and used from an image of an inspection area illuminated by the white light source. The wire bonding inspection apparatus according to the above.
JP9317298A 1997-11-18 1997-11-18 Method and device for inspecting wiring bonding Pending JPH11150142A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9317298A JPH11150142A (en) 1997-11-18 1997-11-18 Method and device for inspecting wiring bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9317298A JPH11150142A (en) 1997-11-18 1997-11-18 Method and device for inspecting wiring bonding

Publications (1)

Publication Number Publication Date
JPH11150142A true JPH11150142A (en) 1999-06-02

Family

ID=18086671

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9317298A Pending JPH11150142A (en) 1997-11-18 1997-11-18 Method and device for inspecting wiring bonding

Country Status (1)

Country Link
JP (1) JPH11150142A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012069732A (en) * 2010-09-24 2012-04-05 Nec Corp Ball bond inspection device and ball bond inspection method used for the ball bond inspection device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012069732A (en) * 2010-09-24 2012-04-05 Nec Corp Ball bond inspection device and ball bond inspection method used for the ball bond inspection device

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