JPH11149019A - Optical transmitting and receiving device and its manufacturing method, and optical semiconductor module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a highly integrated and easy-to-assemble optical transmitting and receiving device. SOLUTION: A semiconductor laser element 111 emitting an optical signal for transmission is fixed to an optical signal transmission area 110a of a 1st base 110. An incident part 130a of an optical fiber 130 (one end part) is held in a optical fiber end part holding area 110b of the 1st base 110. A 2nd base 120 is fixed to an optical signal receiving area 110c of the 1st base 110, and the 2nd base 120 is holding the main body of optical fiber 130. A half mirror 124, which allows a transmitting optical signal emitted from a semiconductor laser element 111 to transmit while reflecting an optical signal for reception made incident from the other end part of the optical fiber 130, is inserted in a main body of the 2nd base 120 and the optical fiber 130. A 1st photo-detector 126 for reception receiving the optical signal for reception reflected by the half mirror 124 is fixed to the 2nd base 120.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is used in optical fiber communication for transmitting an optical signal output from a semiconductor laser device through an optical fiber, and has an optical receiving function and an optical transmitting function integrated in a hybrid manner. The present invention relates to an apparatus and a manufacturing method thereof, and an optical semiconductor module in which a semiconductor laser element and an optical fiber are optically coupled.

[0002]

2. Description of the Related Art In recent years, an optical subscriber system for transmitting data and multi-channel image information from a center station to general households using optical fibers has been proposed and studied. In this optical subscriber system, a plurality of optical receivers for simultaneously receiving different types of optical signals wavelength-multiplexed to a subscriber terminal in a general home, and requests and data from the subscriber terminal to a center station are transmitted. An optical transmission device for transmission is required.

Further, in order to reduce the cost, an optical transmitter and an optical receiver used in an optical subscriber system employ a passive alignment type mounting technique in which a light emitting element and a light receiving element are coupled to an optical fiber without operating. Is often used.

Further, for miniaturization and high functionality, a technology for compactly integrating an optical receiving device and an optical transmitting device is required.

Therefore, as an optical transmitting and receiving apparatus in which an optical receiving apparatus and an optical transmitting apparatus are compactly integrated, 1996
37 (a) and 37 (b) are proposed in the IEICE General Conference Proceedings SC-2-5.

Hereinafter, the conventional optical transmitting and receiving apparatus will be described.
This will be described with reference to FIGS.

FIG. 37A shows a plan structure of a conventional optical transmitting / receiving apparatus, and FIG.
The cross-sectional structure of the line A is shown.
The fiber block 10 and the PLC (Plan
er Lightwave Circuit) substrate 20. The fiber block 10 holds one end of each of a first optical fiber 11 for transmitting and receiving an optical signal and a second optical fiber 12 for receiving an optical signal. The PLC substrate 20 includes a semiconductor laser device 21 for outputting light in the 1.3 μm band, a monitoring light receiving device 22 for monitoring the output of the semiconductor laser device 21, and a first device for receiving light in the 1.3 μm band. And a WDM that transmits light in the 1.55 μm band while reflecting light in the 1.3 μm band.
A filter 24 is held therein, and an optical waveguide 25 is
Are formed. The other end of the second receiving optical fiber 12 is connected to a second receiving light receiving element 13 for receiving light in the wavelength band of 1.55 μm and outputting video information.

The fiber block 10 and the PLC board 20 are optically connected to each other at an output port 26 and a common port 27. The transmission light in the 1.3 μm wavelength band output from the semiconductor laser device 21 is After passing through the Y-branch 25a of the optical waveguide 25, the light passes through the WDM filter 24, and then passes through the common port 27 and is output from the other end of the first optical fiber 11. Also,
Wavelength input from the other end of the first optical fiber 11.
1.3 out of 3 μm band and 1.55 μm band receiving light
After the light in the μm band passes through the common port 27,
The light passes through the filter 24 and then passes through the Y-branch 25a of the optical waveguide 25 and is received by the first light receiving element 23 for reception. Further, of the 1.3 μm band and 1.55 μm band receiving light input from the other end of the first optical fiber 11, the 1.55 μm band light is reflected by the WDM filter 24, The light passes through the output port 26 and is received by the second light receiving element 13 for reception.

In the conventional optical transmitting / receiving apparatus, the first and second optical fibers 11, 13 as external transmission paths are
All couplings other than coupling with the LC substrate 20 are performed by passive alignment.

In an optical semiconductor module used as an optical transmitter, a V-shaped concave groove extending in the optical axis direction is formed in a base made of silicon, and an optical fiber is housed in the concave groove. It has become possible to accurately mount optical fibers as a base.

However, it is difficult to mount the semiconductor laser device accurately on the base because of the electrodes formed on the semiconductor laser device and the base and the small size of the semiconductor laser device. It is.

Therefore, a technique for mounting a semiconductor laser device on a base with high precision by a passive alignment method is required. T. Hashimoto et al., MOC '95, D5, 1995 discloses an optical semiconductor device as shown in FIG. A method for manufacturing a module has been proposed.

That is, a concave groove 31 for positioning a fiber extending in the optical axis direction is formed in a base 30 made of silicon.
And a notch 32 extending in a direction perpendicular to the optical axis, and a wiring pattern 33 and A
A positioning base mark 34 made of a u layer is formed. On the other hand, the back surface of the semiconductor laser
Surface electrode (not shown) composed of a layer and Au
A positioning laser mark 41 made of a layer is formed. In this case, the wiring pattern 33 of the base 30 and the base mark 34 are formed in the same step, and the surface electrode of the semiconductor laser element 40 and the laser mark 41 are formed in the same step. No processing steps are required.

An infrared ray 51 emitted from an infrared light source 50 and transmitted through the base 30 and the semiconductor laser element 40 is received by the CCD camera 52, and the base mark 34 of the base 30 and the laser mark 41 of the semiconductor laser element 40 are image-recognized. Thereby, the base 30 and the semiconductor laser element 40 are aligned.

The single-mode optical fiber 60 is positioned in a plane perpendicular to the optical axis by being housed in the concave groove 31, and the stopper wall surface of the cut groove 32 (the semiconductor laser element side). (Wall surface), positioning in the optical axis direction is performed.

[0016]

However, FIG.
In the conventional optical transceiver shown in FIGS. 1A and 1B, the PLC substrate 20 is used as an optical platform.
Since the shortening of the length of the LC substrate 20 is restricted by the minimum bending radius of the waveguide 25, the length of the PLC substrate 20 increases in the traveling direction of light. It becomes difficult. That is, the PLC substrate 20
Has a minimum bending radius at which no loss occurs due to a difference in refractive index between the waveguide layer and the cladding layer. The minimum bending radius can be reduced by increasing the refractive index difference, but the refractive index difference is reduced to 0.75% (0.
The refractive index difference of 75% is the maximum value in consideration of the internal loss of the waveguide and the connection loss with the optical fiber. ), The minimum bending radius can only be reduced to about 5 mm. Therefore, FIGS. 37 (a) and (b)
In the optical transmitting and receiving device shown in (1), the length of the PLC substrate 20 in the optical axis direction is required to be at least about 15 mm, and the optical transmitting and receiving device further requires a fiber connection portion. The length will be 20 mm or more.

In the above-mentioned conventional optical transmitting and receiving apparatus, the wavelength 1..
The 55 μm band receiving light is output from the output port 26 of the PLC substrate 20 to the second optical fiber 12,
Therefore, there is a problem in that the cost reduction and downsizing of the optical transmitting and receiving device are restricted due to the configuration of receiving by the receiving light receiving element 13.

In the assembly process, the PLC
After cutting the cut grooves on the substrate 20 with a dicing saw and inserting the WDM filter 24 into the cut grooves, the position and angle of the WDM filter 24 are adjusted, but the WDM filter 24 must be mounted with high precision. Therefore, there is a problem that the loss of light traveling toward the output port 26 after entering from the common port 27 increases.

When the fiber block 10 is joined to the PLC substrate 20, the first optical fiber 11 and the common port 27, and the second optical fiber 12 and the output port 26
Are required to be connected with high efficiency at the same time, so that it is necessary to perform alignment by active alignment, which causes a problem that the assembly process is complicated.

Further, the PLC substrate 20 and the semiconductor laser device 21, the PLC substrate 20 and the first light receiving device 23 for reception,
Semiconductor laser device 21, monitor light receiving device 22, first and second optical fibers 11, 12 and PLC substrate 20
There are many mounting steps that require high precision, such as mounting, respectively, so that there is a problem that cost reduction is hindered.

The conventional optical semiconductor module shown in FIG. 38 has the following problem.

First, a mask for forming the base mark 34 is provided in the concave groove 31 of the base 30.
It is necessary to perform alignment so that the position in the direction perpendicular to the optical axis in a plane parallel to the surface of the optical disk coincides. However,
Since a mask shift always occurs at the time of mask alignment, a position shift occurs between the base mark 34 and the concave groove 31. Further, since the semiconductor laser element 40 is aligned using the base mark 34 which is displaced with respect to the concave groove 31, the semiconductor laser element 40
There is a problem that double displacement occurs with respect to the 0 concave groove 31.

When the infrared ray 51 emitted from the infrared light source 50 is received by the CCD camera 52 and the image is recognized, the base mark 34 and the laser mark 41 having different distances from the CCD camera 52 are simultaneously observed. There is also a problem that any one of the marks is defocused and blurred for image recognition.

The finer the base mark 34 and the laser mark 41 are, the more precise and accurate the alignment can be. However, since the base mark 34 and the laser mark 41 are formed by a metal vapor deposition method, the base mark 34 and the laser mark 41 are formed. Since the pattern edges of the laser mark 34 and the laser mark 41 fluctuate on the order of microns, there is a problem that accurate image recognition cannot be performed.

The relative distance between the emitting end face of the semiconductor laser element 40 and the laser mark 41 varies on the order of several microns due to the precision at the time of cleavage, and the stopper wall surface of the cut groove 32 in the base 30 and the base mark 34. The relative distance to the groove 32
Depending on the precision of the formation, variations on the order of several microns occur.

Further, according to the conventional image recognition method, a pattern in which the base mark 34 and the laser mark 41 are superimposed is image-recognized by using the infrared rays 51 emitted from the infrared light source 50, so that mechanical Since such adjustments are made, there is also a problem that variations in the relative position between the emission end face of the semiconductor laser element 40 and the laser mark 41 and variations in the formation of the cut groove 32 in the base 30 cannot be suppressed.

Due to the various problems described above, in the conventional optical semiconductor module, the optical axis of the semiconductor laser device and the optical axis of the optical fiber are greatly displaced from each other, and the light emitting end face of the semiconductor laser device and the optical axis are shifted. There is a problem that the distance between the fire and the incident end face varies greatly.

In view of the above, it is an object of the present invention to provide an optical transceiver that is highly integrated and easy to assemble, thereby realizing a reduction in the price, size, and functionality of the optical transceiver. It is an object of the present invention to reduce the displacement between the optical axis of the semiconductor laser device and the optical axis of the optical fiber, and to reduce the variation in the distance between the emission end face of the semiconductor laser element and the incidence end face of the optical fire. This is the second purpose.

[0029]

In order to achieve the first object, a first optical transmitting / receiving apparatus according to the present invention comprises an optical fiber for transmitting an optical signal for transmission and receiving an optical signal for reception. A first optical transmission / reception apparatus having an optical signal transmission area and an optical signal reception area spaced apart from each other, and having a fiber end holding area between the optical signal transmission area and the optical signal reception area. A base, a semiconductor laser element fixed to an optical signal transmission area of the first base and emitting an optical signal for transmission, and a semiconductor laser element provided in a fiber end holding area of the first base; Fiber end holding means for holding one end of an optical fiber on which an outgoing transmission optical signal is incident, and fixed to an optical signal receiving area of the first base for holding a main body of the optical fiber The second And the second base and the optical fiber are held so as to be inserted into the main body of the optical fiber. The optical signal for transmission emitted from the semiconductor laser element is transmitted, and the optical signal is transmitted from the other end of the optical fiber. A reflective filter that reflects the receiving optical signal, and a receiving light receiving element that is fixed to the second base and receives the receiving optical signal that is reflected by the reflective filter.

According to the first optical transmission / reception device, the second base holding the main body of the optical fiber and the light receiving element for reception and holding the reflection type filter inserted into the main body of the optical fiber is formed by the second base. Since the semiconductor laser element is fixed and fixed to the first base holding one end of the optical fiber by the fiber end holding means, the main body of the optical fiber, the reflection type filter and the receiving After the second base holding the light receiving element for use and the first base holding one end of the semiconductor laser element and the optical fiber are separately provided, the second base is fixed to the first base. As compared with the structure in which the semiconductor laser element, one end and main body of the optical fiber, the reflection type filter and the light receiving element for reception are fixed to one base, the assembly process is improved. It becomes easier.

In order to achieve the first object, a second optical transmission / reception device according to the present invention includes a package, an optical fiber for transmitting a transmission optical signal and receiving a reception optical signal, and a package. A first base fixed to the bottom, having an optical signal transmission area and an optical signal reception area at an interval from each other, and having a fiber end holding area between the optical signal transmission area and the optical signal reception area; A semiconductor laser element fixed to the optical signal transmission area of the first base and emitting an optical signal for transmission, and a semiconductor laser element provided in the fiber end holding area of the first base and emitted from the semiconductor laser element. Fiber end holding means for holding one end of an optical fiber on which an optical signal for transmission is incident, and a second base fixed to the bottom of the package and holding the main body of the optical fiber. While being held so as to be inserted into the second base and the main body of the optical fiber, the transmitting optical signal emitted from the semiconductor laser element is transmitted, and the receiving light incident from the other end of the optical fiber is transmitted. A reflection type filter for reflecting a signal, and being fixed to the second base,
A receiving light receiving element for receiving a receiving optical signal reflected by the reflection type filter.

According to the second optical transceiver, the first base for holding the semiconductor laser element and one end of the optical fiber, and the second base for holding the main body of the optical fiber, the reflection filter, and the light receiving element for reception are provided. After the base and the base are provided separately, the first base and the second base can be fixed to the package, so that the semiconductor laser element, one end and main body of the optical fiber, the reflection type filter, and the The assembly process is easier than in a structure in which the light receiving element is fixed to one base.

In the first or second optical transceiver, the first base preferably has optical axis direction positioning means for regulating the position of one end of the optical fiber in the optical axis direction.

In the first or second optical transmission / reception device, the fiber end holding means has an optical axis vertical in-plane positioning means for regulating the position of one end of the optical fiber in a plane perpendicular to the optical axis. Is preferred.

In the first or second optical transmission / reception device, the optical axis vertical in-plane positioning means is formed in the fiber end holding area of the first base so as to extend in the optical axis direction, and extends from the opening side to the bottom side. A concave groove having a pair of wall surfaces approaching each other as it goes toward, and holding one end of the optical fiber; and one end of the optical fiber fixed above the concave groove in the first base and held in the concave groove. It is preferable to have a pressing member for pressing the portion against a pair of wall surfaces of the concave groove.

In the first or second optical transmission / reception device, the fiber end holding means is formed in the fiber end holding region of the first base so as to extend in the optical axis direction, and holds one end of the optical fiber. And a resin groove for introducing the supplied resin into the concave groove so as to extend in a direction intersecting with the concave groove and communicate with the concave groove in the fiber end holding region of the first base. It preferably has a groove.

In the first or second optical transmission / reception device, the fiber end holding means is formed in the fiber end holding region of the first base so as to extend in the optical axis direction, and holds one end of the optical fiber. And a resin extending in a direction intersecting with the concave groove and communicating with the concave groove, and discharging the resin supplied to the concave groove to the outside. It is preferable to have a discharge groove.

In the first or second optical transmission / reception apparatus, it is preferable that a reflection film for reflecting a transmission optical signal emitted from the semiconductor laser element is provided between the reflection type filter and the reception light receiving element. .

The first or second optical transmission / reception device is held so as to be inserted at the other end side of the optical fiber with respect to the main body portion of the optical fiber and the reflection filter in the second base. A wavelength that transmits a transmission optical signal emitted from the optical fiber and selectively reflects a reception optical signal in a predetermined wavelength band among reception optical signals in a plurality of wavelength bands incident from the other end of the optical fiber. It is preferable to further include a selective reflection filter and another reception light receiving element fixed to the second base and receiving the reception optical signal reflected by the wavelength selection reflection filter.

In this case, it is more preferable to provide a filter between the wavelength selective reflection type filter and another receiving light receiving element for selectively transmitting a receiving optical signal in a predetermined wavelength band.

In the first or second optical transmission / reception device, the semiconductor laser element has a first base and the optical axis of light emitted from the semiconductor laser element has a predetermined inclination angle with respect to the optical axis of the optical fiber. It is preferable that they are fixed as follows.

In this case, the predetermined inclination angle is preferably 2 to 3 °.

To achieve the first object, a third optical transmitting / receiving apparatus according to the present invention comprises an optical transmitting / receiving apparatus having an optical fiber for transmitting a transmitting optical signal and receiving a receiving optical signal. A base having an optical signal transmission area and an optical signal reception area spaced apart from each other, and having a fiber end holding area between the optical signal transmission area and the optical signal reception area; and an optical signal transmission area of the base. And a semiconductor laser element that emits a transmission optical signal and an optical fiber that is provided in an optical signal transmission area of the base and receives an optical signal for transmission emitted from the semiconductor laser element. The optical axis direction positioning means for regulating the position in the optical axis direction, and the optical fiber is provided in the fiber end holding area of the base, and the light in a state where the position of one end of the optical fiber in the plane perpendicular to the optical axis is regulated. Fiber end holding means for holding one end of the fiber, fiber main body holding means provided in the optical signal receiving area of the base and holding the main body of the optical fiber, and fiber main body holding means And a reflection filter which is held so as to be inserted into the optical fiber and transmits the transmission optical signal emitted from the semiconductor laser element, and reflects the reception optical signal incident from the other end of the optical fiber. And a receiving light receiving element fixed to the optical signal receiving area of the base and receiving the receiving optical signal reflected by the reflection type filter.

According to the third optical transmitting / receiving device, the optical axis direction positioning means for regulating the position of one end of the optical fiber in the optical axis direction is provided in the optical signal transmission area of the base.
The position of one end of the optical fiber in the direction of the optical axis, and
The distance between the semiconductor laser device fixed to the base and the one end of the optical fiber can be reliably restricted. Further, the fiber end holding means for holding the one end of the optical fiber in a state where the position of the one end of the optical fiber in the plane perpendicular to the optical axis is regulated is provided in the optical fiber end holding area of the base. The position of one end of the optical fiber in a plane perpendicular to the optical axis can be reliably restricted.

In the third optical transmission / reception device, the fiber end holding means is formed on the base so as to extend in the optical axis direction, has a pair of wall surfaces which approach each other from the opening side to the bottom side, and A concave groove holding the fiber, and a pressing member fixed above the concave groove in the fiber end holding area of the base and pressing one end of the optical fiber held in the concave groove against a pair of wall surfaces. Is preferred.

The method for manufacturing an optical transceiver according to the present invention
The present invention is directed to a method for manufacturing an optical transmitting and receiving apparatus including an optical fiber for transmitting an optical signal for transmission and receiving an optical signal for reception, having an optical signal transmitting area and an optical signal receiving area at an interval from each other, and A first base having a fiber end holding region between the transmission region and the optical signal receiving region has a cross-sectional shape capable of holding one end of the optical fiber in a fiber end holding region of the first base and extends in the optical axis direction. A concave groove forming step of forming an optical fiber end holding concave groove, a laser element fixing step of fixing a semiconductor laser element that emits a transmission optical signal to an optical signal transmission area of the first base, and a second step. After forming a concave groove for holding an optical fiber main body having a cross-sectional shape capable of holding the main body of the optical fiber and extending in the optical axis direction on the base, the optical fiber is inserted into the concave groove for holding the optical fiber main body. book of A fiber main body fixing step of fixing a portion, and after forming a cut groove extending in a direction perpendicular to the optical axis in the second base and the main body of the optical fiber, the semiconductor laser device emits the light inside the cut groove. A filter fixing step of fixing a reflective filter that transmits a transmission optical signal incident on one end of the optical fiber and reflects a reception optical signal incident from the other end of the optical fiber; A light receiving element fixing step of fixing a light receiving element for receiving a light signal for reception reflected by the reflection type filter above the concave groove for holding the optical fiber main body portion, and an end of the optical fiber to the first base. And the second base to which the main body of the optical fiber, the reflective filter and the light receiving element for reception are fixed is fixed to the concave groove for holding the end of the optical fiber. And a base fixing step of fixing the No. transmission area.

In the method of manufacturing an optical transceiver according to the present invention, either the concave groove forming step or the laser element fixing step may be performed first.

According to the method for manufacturing an optical transceiver of the present invention, the second base and the main body of the optical fiber fixed to the concave groove for holding the main body of the optical fiber of the second base have a direction perpendicular to the optical axis. After forming the notch groove extending into the notch groove, the reflection filter is fixed inside the notch groove, so that the reflection filter is securely fixed to the optical path of the optical fiber.
Further, after the reflection type filter is fixed to the second base, the reception light receiving element is fixed above the concave groove for holding the optical fiber body in the second base. The positional relationship is precisely regulated.

After the semiconductor laser device is fixed to the first base, one end of the optical fiber is fixed to the concave groove for holding the end of the optical fiber formed in the first base. The positional relationship with the one end is precisely regulated.

In order to fix the second base to which the main body of the optical fiber, the reflection type filter and the light receiving element for reception are fixed to the first base, the first base and the second base are provided separately. After that, the second base can be fixed to the first base, so that the semiconductor laser element, one end and main body of the optical fiber, the reflection filter, and the light receiving element for reception are fixed to one base. Compared with the manufacturing method, the assembly process becomes easier, and the optical transceiver capable of adjusting the optical axis on the order of submicrons by the passive alignment method can be manufactured simply and reliably.

In the method of manufacturing an optical transceiver according to the present invention, the base fixing step includes the step of controlling the position of the one end of the optical fiber in the optical axis direction and the position in the plane perpendicular to the optical axis with the second base fixed. Is fixed to the optical signal transmission area of the first base.

In the method of manufacturing an optical transceiver according to the present invention, the step of forming the concave groove includes the step of extending the optical fiber end holding groove into the fiber end holding region of the first base in a direction intersecting the optical fiber end holding concave groove. Forming a resin introduction groove communicating with the section holding concave groove, the base fixing step includes: attaching one end of the optical fiber to the optical fiber end holding concave groove of the first base from the resin introduction groove; It is preferable to include a step of fixing with a resin supplied to the concave groove for holding the optical fiber end.

To achieve the second object, a first optical semiconductor module according to the present invention comprises: a base having a concave groove extending in an optical axis direction and a cut groove extending in a direction perpendicular to the optical axis; And a semiconductor laser element that emits semiconductor laser light and is received in the concave groove of the base with the incident end face abutting on the semiconductor laser side wall surface of the cut groove and emitted from the semiconductor laser element. The target is an optical semiconductor module having an optical fiber for transmitting laser light and an alignment mark formed on a base for aligning the semiconductor laser element with the base. The alignment mark is the same as the concave groove. And the same etching.

In the first optical semiconductor module, the alignment mark may include a pair of lateral alignment marks formed at positions symmetrical with respect to the optical axis on both sides of a region where the semiconductor laser element is fixed on the base. preferable.

In the first optical semiconductor module, it is preferable that the alignment mark includes a base edge alignment mark formed at an edge portion of the cut groove in the base with the wall surface on the semiconductor laser side.

In the first optical semiconductor module, the alignment mark includes a pair of lateral alignment marks formed at positions symmetrical with respect to the optical axis on both sides of the region where the semiconductor laser element is fixed on the base, and the alignment mark on the base. It is preferable to include a base edge alignment mark formed at the edge of the cut groove with the wall surface on the semiconductor laser side.

The first optical semiconductor module is further provided with a laser edge alignment mark formed on the bottom surface of the semiconductor laser element at the optical fiber side edge for aligning the semiconductor laser element with the base. Is preferred.

In this case, it is preferable that the alignment mark of the base includes a base edge alignment mark formed at the edge of the cut groove in the base with the wall surface on the semiconductor laser side.

In order to achieve the second object, a second optical semiconductor module according to the present invention has a base having a concave groove extending in the optical axis direction, and is fixed to the base and emits semiconductor laser light. A semiconductor laser device having a double channel structure, an optical fiber housed in a concave groove of the base and transmitting laser light emitted from the semiconductor laser device, and formed on the base; and a position between the semiconductor laser device and the base. The present invention is directed to an optical semiconductor module including an alignment mark for performing alignment, and the alignment mark has a V-shaped cross section formed at a position symmetrical with respect to an optical axis in a region where a base semiconductor laser element is fixed. A convex alignment mark including a convex portion existing between the pair of grooves is included.

In the second semiconductor optical module, the pair of grooves on both sides of the convex portion are preferably formed by the same photolithography and the same etching as the concave groove.

[0061]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) Hereinafter, an optical transceiver according to a first embodiment will be described with reference to FIG.
This will be described with reference to (b) and FIGS. 2 (a) and 2 (b).

The optical transmission / reception device according to the first embodiment includes a first base 1 made of silicon and having an optical transmission function.
10 and the second made of GaAs having an optical receiving function.
And the base 120 are integrated.

On the optical signal transmission area 110a provided on the left side of FIG. 1 of the first base 110, for example, a semiconductor laser element 11 for emitting light in the 1.3 μm band is provided.
1, and a monitoring light receiving element 112 composed of a photodiode for monitoring the intensity of light emitted from the semiconductor laser element 111 are mounted. The wavelength of the light emitted from the semiconductor laser element 111 is preferably in the 1.3 μm band in consideration of the use of an optical subscriber system. As the monitor light receiving element 112, a side-incidence type is preferable.
It is preferable to use a device that has a linear and sufficiently high light receiving sensitivity in the wavelength band of light emitted from the semiconductor laser element 111.

As shown in FIG. 1B, the monitor light receiving element 112 is positioned in the optical axis direction so that the reflected light from the light receiving surface of the monitor light receiving element 112 does not re-enter the active layer region of the semiconductor laser element 111. It is fixed at an angle to be inclined.

On the upper surface of the optical fiber end holding area 110b provided on the first base 110 on the right side of the optical signal transmission area 110a, a first concave portion having a trapezoidal cross section as shown in FIG. The groove 113 is formed so as to extend in the optical axis direction, and the first concave groove 113 accommodates the incident portion 130a of the single mode optical fiber 130.

As the optical fiber 130, in order to sufficiently suppress the return loss from the semiconductor laser device 111,
It is preferable to use an incident end face subjected to a non-reflection treatment. Also, the mode field diameter of the optical fiber 130 and the spot diameter of the semiconductor laser element 111 (the feasible range is 1) so that the light emitted from the semiconductor laser element 111 is coupled at the incident end face of the optical fiber 130 with high coupling efficiency. It is preferable to select the mode field diameter of the optical fiber 130 such that the size of the optical fiber 130 is about the same as that of the optical fiber 130.

Further, it is preferable that the distance between the semiconductor laser element 111 and the optical fiber 130 is as small as possible so that the light emitted from the semiconductor laser element 111 is coupled at the incident end face of the optical fiber 130 with higher coupling efficiency. Although not shown, in order to shorten the optical distance between the semiconductor laser element 111 and the optical fiber 130, a resin or an oil whose refractive index is matched between the semiconductor laser element 111 and the optical fiber 130 is not shown. May be filled.

On the central portion of the first base 110, a fiber holding member 115 having a second concave groove 114 having a longer base than the first concave groove 113 is fixed. The incident portion 130a of the fiber 130 is
And the bottom surface of the second concave groove 114 is sandwiched by three points. In this case, since the fiber pressing member 115 is fixed to the first base 110 with a photocurable resin or a thermosetting resin having a contracting property, the incident portion 130a of the optical fiber 130 has the fiber pressing member 115. Under the force of approaching the first base 110, it is securely held by three points of both wall surfaces of the first concave groove 113 and the bottom surface of the second concave groove 114. The second concave groove 11 of the fiber holding member 115
4 may be formed by etching or by machining with a dicing saw or the like.

A cutout 116 extending in a direction perpendicular to the optical axis is formed on the right side of the optical signal transmission area 110a in the first base 110. Fiber stopper 1 formed of a wall surface of cutout portion 116 on optical signal transmission region 110a side
17, the incident end face of the optical fiber 130 contacts the semiconductor laser device 111 and the optical fiber 130.
Is restricted with respect to the incident end face.

Since the incident portion 130a of the optical fiber 130 is sandwiched by three points and the incident end face of the optical fiber 130 is in contact with the fiber stopper 117, the optical axis of the submicron order is obtained by the passive alignment method. Adjustment is possible.

The fixing positions of the semiconductor laser element 111 and the monitoring light receiving element 112 on the first base 110 need to be positioned with high precision with respect to the center line of the first concave groove 113 and the fiber stopper 117. An alignment mark 118 is provided in the optical signal transmission area 110a of the first base 110.

The second base 120 is fixed on the optical signal receiving area 110c provided on the right side of the optical fiber end holding area 110b in the first base 110. As shown in FIG. 2B, a third concave groove 121 having a rectangular cross section is formed on the upper surface. The optical fiber 1 is provided inside the third concave groove 121.
The optical fiber 130 is formed by a resin filled in the third concave groove 121.
It is fixed to the bottom surface. In this case, the optical fiber 130
When the incident end face of the abuts against the wall surface of the notch 116,
Optical fiber end holding area 110b of first base 110
The optical fiber 130 is fixed to the bottom surface of the third concave groove 121 such that a space is formed between the third concave groove 121 and the second base 120. As described below, the optical fiber 130
Since the optical fiber 130 is used for both the optical transmitting function and the optical receiving function, it is necessary to accurately control the height of the optical axis of the optical fiber 130. Therefore, the optical fiber 130 contacts the bottom surface of the third concave groove 121 over the entire length. Has been fixed to be.

On the left side of the second base 120, there is formed a first cut groove 122 having a predetermined angle with respect to the optical axis and extending in a direction perpendicular to the optical axis.
The first cut groove 122 allows light in the 1.3 μm wavelength band incident from the left side of the optical fiber 130 to pass therethrough, while 1.3 μm wavelength incident from the right side of the optical fiber 130.
A half mirror 124 that reflects the light in the m band upward is sandwiched. Further, a second cut groove 123 is formed on the right side of the second base 120 at a predetermined angle with respect to the optical axis and extending in a direction perpendicular to the optical axis. A WDM filter 125 that transmits light in the 1.3 μm band and reflects light in the 1.55 μm band upward is sandwiched by the 123.

On the left side of the second base 120,
A surface-illuminated first receiving light-receiving element 126 composed of a photodiode for receiving light in the 1.3 μm band reflected by the half mirror 124 is fixed, and is located on the right side of the second base 120. , A surface-illuminated second receiving light receiving element 127 composed of a photodiode that receives light in the 1.55 μm band reflected by the WDM filter 125 is fixed. In this case, the light reflected by the half mirror 124 accurately enters the first receiving light receiving element 126, and the WDM filter 1
The light reflected by the second light receiving element 127
It is necessary to design the optical path so that the light is accurately incident on the optical path. For this reason, while the optical fiber 130 is fixed to the bottom surface of the third concave groove 121, the first cut groove 122 and the second cut groove 123 are processed at an accurate angle and position accuracy by dicing cut. The half mirror 124 and the WDM filter 125 are fixed to the first and second cut grooves 122 and 123 with resin. Also,
As the first and second receiving light receiving elements 126 and 127, it is preferable to use those having sufficiently high sensitivity to the wavelength band of incident light and excellent in high-frequency signal characteristics.

According to the optical transmission / reception device according to the first embodiment, the optical fiber 130 functioning as a waveguide is in a linear state, and therefore does not need to be bent unlike the conventional optical transmission / reception device. There is no restriction on the radius of curvature of the fiber. Since the optical path of the optical signal for reception is changed by the reflection type half mirror 124 and the WDM filter 125, the length of the optical transmitting and receiving apparatus in the optical axis direction is determined by the thickness of the half mirror 124 and the WDM filter 125 and the thickness of the WDM filter 125. 1
And the size of the bottom surfaces of the second light receiving elements 126 and 127 for reception. Therefore, the length of the optical transmitting and receiving device in the optical axis direction is sufficient to be 10 to 12 mm, which can be suppressed to about half of the case where the PLC substrate is used.

In an optical transmitting / receiving apparatus using a PLC substrate, a function for receiving an optical signal in the 1.55 μm band needs to be provided outside the apparatus main body. Although there is a problem such as an increase in the fiber connection process, according to the first embodiment, the wavelength 1.5
Since the function of receiving an optical signal in the 5 μm band can be accommodated in the apparatus main body, the size of the entire apparatus can be reduced.

In the optical transmission / reception apparatus using the PLC substrate, as shown in FIG. 37, a port for inputting an optical signal and a port for outputting an optical signal for outputting an optical signal in a 1.55 μm band are required. Therefore, the connection portion between the PLC substrate and the optical fiber is provided at two places. According to the first embodiment, the optical signal receiving function and the transmitting function are provided on one continuous optical fiber. Therefore, since there is no connection portion of the optical fiber in the device, a connection step of the optical fiber is not required.

In each of the optical transceiver using the PLC substrate and the optical transceiver according to the first embodiment, light having a wavelength of 1.3 μm band and light having a wavelength of 1.55 μm are converted from an optical signal for reception. A WDM filter is used for the separation, and the separation accuracy of the optical signal largely depends on the size of the receiving surface on which the reflected light is incident. In an optical transmitting and receiving apparatus using a PLC substrate, since the reflected light from the WDM filter is incident on the PLC substrate, the size of the receiving surface is as small as about 4 to 8 μm, and the positional deviation of the reflected light is ± 1 to 2 μm. Since it is necessary to mount the WDM filter so as to be within the range, high accuracy is required for the angle and the position of the WDM filter in the optical axis direction. On the other hand, in the first embodiment, the light receiving surface of the light receiving element for reception has a large diameter of about 80 μm, so that the spread of the reflected light and the mounting accuracy of the light receiving element for reception (about ± 5 μm) are taken into consideration. Even so, the mounting accuracy of the WDM filter becomes extremely loose.

In an optical transmitting and receiving apparatus using a PLC substrate, the mounting accuracy of each component is within ± 1 μm between the waveguide of the PLC substrate and the semiconductor laser device, and the mounting accuracy between the semiconductor laser device and the monitor light receiving device. The distance is within ± 5 μm, and the distance between the waveguide on the PLC substrate and the light receiving element for reception is ± 5.
μm, the distance between the waveguide of the PLC substrate and the two optical fibers is within ± 2 μm, and the precision of the cut groove for inserting the WDM filter is within ± 3 μm, the width accuracy within ± 3 μm, and the optical axis direction. A positional accuracy of about ± 3 μm and an angular accuracy of about ± 1 degree with respect to the optical axis are required. On the other hand, in the first embodiment, the distance between the optical fiber and the semiconductor laser element is within ± 1 μm, the distance between the semiconductor laser element and the monitoring light receiving element is within ± 5 μm, the position of each receiving light receiving element. The accuracy is within ± 5 μm, and the accuracy of the cut groove for inserting the WDM filter is ± 3 μm.
A groove width accuracy within m, a position accuracy of about ± 5 to 10 μm in the optical axis direction, and an angle accuracy of about ± 3 degrees with respect to the optical axis are required.

As described above, the optical transmitting / receiving apparatus according to the first embodiment has a smaller number of components requiring high positional accuracy and a lower positional accuracy than the optical transmitting / receiving apparatus using the PLC substrate. This is very advantageous from the viewpoint of mass productivity.

In the first embodiment, the wavelength of light emitted from the semiconductor laser device 111 is 1.3 μm
Although it is a band, a 1.55 μm band or another wavelength band may be used instead.

As the structure of the semiconductor laser element 111, a narrow emission angle laser element or a laser element having a spot size conversion function is used so that higher coupling efficiency to the incident end face of the optical fiber 130 can be expected. Is also good.

Although a substrate made of silicon is used as the first base 110, a glass substrate or a ceramic substrate may be used instead so that the first concave groove 113 is processed with high accuracy. May be used. However, when a glass substrate or a ceramic substrate is used, it is preferable to increase the thickness of the electrode wiring layer formed on the glass substrate or the ceramic substrate so that heat radiation of the semiconductor laser element 111 is efficiently performed. . The area of the electrode wiring layer is usually larger than the bottom area of the semiconductor laser element 111, and the electrode wiring layer extends from the bottom of the semiconductor laser element 111 in the horizontal direction. Therefore, when the thickness of the electrode wiring layer is increased, the cross-sectional area of the heat radiation path increases, so that the semiconductor laser element 111 can efficiently radiate heat.

As the second base 120, Ga
Although a substrate made of As was used, a glass substrate or a ceramic substrate having excellent insulating properties may be used instead.

(First Modification of First Embodiment) Hereinafter,
An optical transceiver according to a first modification of the first embodiment will be described with reference to FIGS. In FIGS. 3A and 3B, the same members as those in the first embodiment shown in FIGS. 1A and 1B are denoted by the same reference numerals, and description thereof will be omitted.

As a feature of the first modification, the first base 1
The 10 and the second base 120 are fixed to the bottom of the package 100, respectively. As in the first embodiment, the semiconductor laser element 111 and the monitoring light receiving element 11 are placed on the optical signal transmission area 110a of the first base 110.
2 is mounted. Further, a cutout portion 116 is formed in the first base 110, and the incident end face of the optical fiber 130 abuts on a fiber stopper 117 formed of a wall surface of the cutout portion 116 on the side of the optical signal transmission region 110 a, Semiconductor laser device 111 and optical fiber 130
Is restricted with respect to the incident end face.

As in the first embodiment, the second base 12
An optical fiber 130 is accommodated inside a third concave groove (not shown) formed on the upper surface of the optical fiber 0, and the optical fiber 130 is fixed by resin filled in the third concave groove. ing.

According to the first modification, the package 100
After performing an output test on the semiconductor laser element 111 held by the first base 110 fixed to the first base 110, the second base 120 holding the optical fiber 130 can be fixed to the package 100. Loss generated by coupling the optical fiber 130 to the laser element 111 can be reduced.

(Second Modification of First Embodiment) Hereinafter,
An optical transceiver according to a second modification of the first embodiment will be described with reference to FIG. In FIG. 4, the same members as those of the first embodiment shown in FIGS. 1A and 1B are denoted by the same reference numerals, and the description thereof will be omitted.

As a feature of the second modification, the monitor light receiving element 112 is of a chamfered incidence type. That is, the light emitted from the semiconductor laser element 111 is reflected by a light jumping mirror 112 a provided below the monitor light receiving element 112.
After being reflected upward by the light receiving element 112 for monitoring.
Incident on the light receiving section 112b provided above the.

According to the second modification, light emitted from the left side surface of the semiconductor laser device 111 and reflected by the right side surface of the monitor light receiving device 112 re-enters the active layer region of the semiconductor laser device 111. It becomes difficult to do. For this reason,
Unlike the first embodiment, it is not necessary to incline the monitor light receiving element 112 with respect to the optical axis direction. Therefore, the mounting tolerance is increased, and the mounting of the semiconductor laser element 111 and the monitor light receiving element 112 is easy. become.

(Third Modification of First Embodiment) Hereinafter,
An optical transceiver according to a third modification of the first embodiment will be described with reference to FIG. In FIG. 5, the same members as those of the first embodiment shown in FIGS. 1A and 1B are denoted by the same reference numerals, and description thereof will be omitted.

As a feature of the third modification, the semiconductor laser element 111 and the monitor light receiving element 112 are fixed to the first base 110 at a predetermined inclination angle α in a plane with respect to the optical axis direction. I have.

According to the third modification, the optical fiber 130
The light that has entered the optical transmission and reception device from the optical transmission and reception device is reflected while being attenuated inside the optical transmission and reception device, and then enters the optical fiber 130 again. Attenuation amount of this reflected light (reflection attenuation amount)
Has a significant effect on the amount of noise in an optical network system using an optical transceiver. In particular, the return loss of light in the same wavelength band as the light emitted from the semiconductor laser element 111 has the greatest effect on the system.

The return loss of the light in the same wavelength band as the light emitted from the semiconductor laser element 111 largely depends on the attenuation of the optical coupling portion between the semiconductor laser element 111 and the optical fiber 130.

According to the third modification, since the semiconductor laser element 111 has the inclination angle α, the optical fiber 1
After being emitted from the end face of the semiconductor laser device 111,
Can reduce the coupling efficiency of light that is reflected by the optical fiber 130 and re-enters the optical fiber 130 again, so that a sufficient return loss can be secured.

FIG. 33 shows that the mode field diameter φ is 10 μm.
The return loss at the optical coupling portion (the coupling portion between the semiconductor laser element 111 and the optical fiber 130) of the light incident from the outside to the inside of the optical transceiver through the optical fiber 130 of m, and the inclination angle of the semiconductor laser element 111 The relationship with α is shown. In FIG. 33, the dashed-dotted line indicates the calculated value in the case where no means for preventing reflection is taken on the emission surface of the semiconductor laser element 111 (the reflectivity on the emission surface of the semiconductor laser element 111 is 30%), and the solid line indicates the solid line. Semiconductor laser device 111
When an anti-reflection resin is filled between the semiconductor laser device 111 and the optical fiber 130 (the reflectance at the emission surface of the semiconductor laser element 111 is 1
4%. ), And the broken line indicates the case where the emission surface of the semiconductor laser element 111 is coated with an AR coating (the reflectance at the emission surface of the semiconductor laser element 111 is 10%).
The black circles indicate the case where the anti-reflection resin is filled between the semiconductor laser element 111 and the optical fiber 130 (the reflectance at the emission surface of the semiconductor laser element 111 is 14%
It is. ) Shows the average of the experimental values obtained for the five samples. In the experiment, the inclination angle α was obtained for each case of 0 °, 2 °, and 2.6 °. In each experimental value, the variation in the return loss was within ± 1 dB. In FIG. 33, the calculated value and the experimental value are extremely similar, as can be seen from the comparison between the case of the solid line and the case of the black circle, both of which reflectivity is 14%.

FIG. 34 shows a case where the emission angle (spread angle) of the light emitted from the semiconductor laser element 111 is 15 ° (LD: 15 deg in the drawing) and a case where the emission angle is 12 ° (in the drawing). LD: expressed as 12 deg.), And shows the relationship between the inclination angle α of the semiconductor laser element 111 and the excess loss (the amount of reduction in the coupling efficiency at the incidence part of the optical fiber).

As can be seen from FIG. 33, the inclination angle α is 2
When ゜, the return loss can be improved by about 3.5 dB, and when the inclination angle α is 3 °, the return loss can be improved by about 8.0 dB. However, when the semiconductor laser element 111 is tilted with respect to the optical axis, the coupling efficiency of the light emitted from the semiconductor laser element 111 at the incident portion 130a of the optical fiber 130 decreases.

However, as can be seen from FIG.
When the emission angle of the semiconductor laser element 111 is 15 ° and the inclination angle α is 2 °, the excess loss is 0.5 d.
B, and the excess loss is about 1.0 dB when the inclination angle α is 3 °. Therefore, by sufficiently increasing the coupling efficiency when the inclination angle α is 0 °,
By setting the inclination angle α to about 2 to 3 °, excess loss that occurs can be suppressed to a level that does not cause any problem.
For the above reasons, by setting the inclination angle α to 2 to 3 °, it is possible to achieve both improvement of the return loss and prevention of reduction of the coupling efficiency.

(Second Embodiment) Hereinafter, an optical transceiver according to a second embodiment will be described with reference to FIGS. 6 (a), 6 (b) and 7. FIG.

The optical transmitting / receiving apparatus according to the second embodiment has an optical transmitting function and an optical receiving function mounted on a base 200 made of silicon. That is, the base 200 is
It has an LD / PD integrated monolithic structure.

In the left part of the base 200 in FIG. 6, the optical signal transmission area 20 formed one step lower than the other parts.
On the optical signal transmission area 200a, for example, a semiconductor laser element 211 that emits light in a wavelength band of 1.3 μm and the intensity of light emitted from the semiconductor laser element 211 are monitored. A monitoring light-receiving element 212 composed of a photodiode is mounted. The wavelength of the light emitted from the semiconductor laser element 211 is preferably in the 1.3 μm band in consideration of the use of an optical subscriber system.
As the monitor light receiving element 212, an end face incident type is preferable, and a light receiving sensitivity that is linear and sufficiently high in a wavelength band of light emitted from the semiconductor laser element 211 is preferably used.

As the optical fiber 230, in order to sufficiently suppress the return loss from the semiconductor laser element 211,
It is preferable to use an incident end face subjected to a non-reflection treatment. Further, the mode field diameter of the optical fiber 230 and the spot diameter of the semiconductor laser element 211 (the feasible range is 1) so that the light emitted from the semiconductor laser element 211 is coupled at the incident end face of the optical fiber 230 with high coupling efficiency. It is preferable to select the mode field diameter of the optical fiber 230 such that the size of the optical fiber 230 is about the same as that of the optical fiber 230.

Further, it is preferable that the distance between the semiconductor laser element 211 and the optical fiber 230 is as small as possible so that the light emitted from the semiconductor laser element 211 is coupled at the incident end face of the optical fiber 230 with higher coupling efficiency. Although not shown, in order to shorten the optical distance between the semiconductor laser element 211 and the optical fiber 230, a resin or an oil whose refractive index is matched between the semiconductor laser element 211 and the optical fiber 230 is not shown. May be filled.

As shown in FIG. 6B, the monitor light-receiving element 212 is positioned in the direction of the optical axis so that the reflected light from the light-receiving surface of the monitor light-receiving element 212 does not re-enter the active layer region of the semiconductor laser element 211. It is fixed at an angle to be inclined.

Optical signal transmission area 20 on base 200
An optical fiber end holding area 200b and an optical signal receiving area 200c, which are one step higher than the optical signal transmitting area 200a, are provided on the right side of the optical signal transmitting area 200a. As shown in FIG. 7, the optical fiber end holding area 200b and the optical signal receiving area 200c have a pentagonal cross section including an upper quadrangular portion and a lower triangular portion, and have a concave shape extending in the optical axis direction. The groove 201 is formed continuously, and the concave groove 2 is formed.
A single mode optical fiber 230 is accommodated in 01.

Optical signal transmission area 20 in base 200
On the right side of Oa, a notch 20 extending in a direction perpendicular to the optical axis
2 are formed. The incident end face of the optical fiber 230 is in contact with the fiber stopper 203 formed by the wall surface of the notch 202 on the optical signal transmission area 200a side, thereby regulating the distance between the semiconductor laser element 211 and the incident end face of the optical fiber 230. Have been.

Optical fiber end holding area 2 of base 200
7, a convex portion 20 is formed on the lower surface as shown in FIG.
The fiber pressing member 204 having the fiber holding member 4a is fixed by a thermosetting or light-curing resin 205 having a contracting property, and the convex portion 204a of the fiber pressing member 204 is fixed.
The incident portion 230a of the optical fiber 230 is in contact with both wall surfaces of the triangular portion of the concave groove 201 due to the bottom surface. As a result, the incident portion 230a of the optical fiber 230 is connected to both wall surfaces of the triangular portion of the concave groove 201 and the fiber holding member 2.
04 and the bottom of the convex portion 204a. In this case, since the fiber pressing member 204 is fixed to the base 200 with the resin 205 having shrinkage, the incident portion 230a of the optical fiber 230 is
The fiber holding member 204 receives the force approaching the base 200, and is securely held by three points, that is, both the wall surfaces of the triangular portion of the concave groove 201 and the bottom surface of the convex portion 204 a of the fiber holding member 204.

The convex portion 204a of the fiber holding member 204 may be formed by etching a silicon substrate, processing the silicon substrate by a dicing saw, or forming a glass material by using a high-precision mold. It can be pressed or processed by a dicing saw.

Since the incident portion 230a of the optical fiber 230 is sandwiched by three points and the incident end face of the optical fiber 230 is in contact with the fiber stopper 203, the optical axis of the submicron order is obtained by the passive alignment method. Adjustment is possible. Further, since the optical fiber 230 is fixed to the concave groove 201 extending continuously to the optical fiber end holding area 200b and the optical signal receiving area 200c, the height of the optical axis of the optical fiber 230 can be accurately adjusted by self-alignment. Can be controlled.

The fixed positions of the semiconductor laser element 211 and the monitor light receiving element 212 on the base 200 need to be positioned with high precision with respect to the center line of the concave groove 201 and the fiber stopper 203.
The alignment mark 20 is provided in the optical signal transmission area 200a of FIG.
6 are provided.

A first cut groove 207 is formed at a left side of the optical signal receiving area 200c of the base 200 at a predetermined angle with respect to the optical axis and extending in a direction perpendicular to the optical axis. One cut groove 207 transmits light in the 1.3 μm wavelength band from the incident side of the optical fiber 230, while reflecting light in the 1.3 μm band from the output side of the optical fiber 230 upward. Half mirror 22
4 are held. A second cut groove 208 having a predetermined angle with respect to the optical axis and extending in a direction perpendicular to the optical axis is formed in a right portion of the optical signal receiving area 200c of the base 200. Cut groove 2
08, a WDM filter 225 that transmits light in the 1.3 μm band and reflects upward in the 1.55 μm band is sandwiched.

On the left side of the optical signal receiving area 200c of the base 200, a surface-incident type first receiving light receiving device comprising a photodiode receiving the light in the 1.3 μm band reflected by the half mirror 224 is provided. The element 226 is fixed and the optical signal receiving area 200 of the base 200 is
On the right side of c, a surface-incident type second receiving light receiving element 22 composed of a photodiode for receiving light in the wavelength band of 1.55 μm reflected by the WDM filter 225.
7 is fixed. In this case, the light reflected by the half mirror 224 accurately enters the first light receiving element 226, and the light reflected by the WDM filter 225 accurately enters the second light receiving element 227. First, it is necessary to design an optical path. Therefore, with the optical fiber 230 fixed inside the concave groove 201, the first cut groove 207 and the second cut groove 20
8 is processed by dicing and cutting at an accurate angle and position accuracy, and the half mirror 224 and the WDM filter 225 are first and second cut grooves 207 and 208.
Is fixed with resin. As the first and second light receiving elements for reception 226 and 227, those having sufficiently high sensitivity to the wavelength band of incident light and excellent in high-frequency signal characteristics are preferably used.

The optical transmitting / receiving apparatus according to the second embodiment is
Compared to an optical transceiver using an LC substrate, the number of components requiring high positional accuracy is small and the positional accuracy may be moderate. Therefore, the first point is that it is very advantageous from the viewpoint of mass productivity. This is the same as the embodiment.

In the second embodiment, the wavelength of light emitted from the semiconductor laser device 211 is 1.3 μm
Although it is a band, a 1.55 μm band or another wavelength band may be used instead.

Further, as the structure of the semiconductor laser element 211, a narrow emission angle laser element or a laser element having a spot size conversion function is used so that higher coupling efficiency to the incident end face of the optical fiber 230 can be expected. Is also good.

Although a substrate made of silicon is used as the base 200, a glass substrate or a ceramic substrate may be used instead so that the concave groove 201 can be processed with high accuracy. However, when a glass substrate or a ceramic substrate is used, it is preferable to increase the thickness of the electrode wiring layer formed on the glass substrate or the ceramic substrate so that the semiconductor laser element 211 can efficiently radiate heat. .

(Third Embodiment) Hereinafter, an optical transmitting and receiving apparatus according to a third embodiment will be described with reference to FIGS.
This will be described with reference to FIG.

In the third embodiment, the optical fiber 130 in the first embodiment is fixed to the first base 110 and the second base 120, or the optical fiber 230 in the second embodiment is fixed to the base 200. It relates to a structure to be fixed.

As shown in FIG. 8, a semiconductor laser element 311 is mounted on an optical signal transmitting area 300a of a base 300, and an optical fiber end holding area 300b of the base 300 and an optical signal receiving area (not shown) are provided. , A concave groove 301 having a trapezoidal cross section and extending in the optical axis direction is formed continuously, and the concave groove 301 accommodates a single mode optical fiber 330. In addition, base 30
On the right side of the optical signal transmission area 300a at 0, a notch 302 extending in a direction perpendicular to the optical axis is formed, and the optical stopper 303 is formed by a wall of the optical signal transmission area 300a on the optical signal transmission area 300a side. The incident end face of the fiber 330 is in contact.

As shown in FIGS. 8 and 9 (a), the right side of the optical fiber end holding area 300b of the base 300 extends in the direction perpendicular to the optical axis and communicates with the concave groove 301 and has the concave groove 301. A pair of resin supply grooves 304 having a bottom surface located on the upper side as compared to the bottom surface is formed,
A resin supply groove 304 is provided at the center of each resin supply groove 304.
And a trapezoidal pyramid-shaped resin supply concave portion 305 having a bottom surface located above the bottom surface. Thus, when a low-viscosity resin for fixing the optical fiber 330 to the base 300 is supplied to the resin supply recess 305, the supplied resin flows from the resin supply recess 305 to the resin supply groove 30.
4 and is introduced into the concave groove 301. The resin introduced into the concave groove 301 flows between the optical fiber 330 and the wall surface or the bottom surface of the concave groove 301 in the optical axis direction by capillary action, and fixes the optical fiber 330 to the wall surface or the bottom surface of the concave groove 301.

As shown in FIGS. 8, 9B and 9C, a concave groove 3 extending in the direction perpendicular to the optical axis is formed on the left side of the optical fiber end holding area 300b of the base 300.
01 and a pair of resin discharge grooves 306 having a bottom surface located above the bottom surface of the concave groove 301. As a result, the optical fiber 330 is
The remaining resin consumed for fixing to the wall surface or the bottom surface of the first unit is discharged to the outside through the resin discharge groove 306. For this reason, even if a large amount of resin more than the required amount is supplied, it is possible to avoid a situation where the resin flows into the vicinity of the semiconductor laser element 311 after flowing into the notch portion 302 from the concave groove 301 and a certain amount of resin is supplied. Since it is used to fix the optical fiber 330 to the wall surface or the bottom surface of the concave groove 301, stable fixing can be realized.

The resin supply groove 304, the resin supply recess 305, and the resin discharge groove 306 may be provided on the fiber holding member in addition to the base.

(Fourth Embodiment) Hereinafter, an optical transceiver according to a fourth embodiment will be described with reference to FIGS.
This will be described with reference to FIG. In the fourth embodiment, the jacket (or the MU ferrule) 131 of the optical fiber 130 is fixed to the first base 110 in the first embodiment. Therefore, the same members as those in the first embodiment will not be described. 1 (a), the description thereof will be omitted.

As shown in FIG. 10A, the first base 110 extends from the optical signal receiving area 110c to the side opposite to the semiconductor laser device 111 and has the optical signal receiving area 110c.
A higher jacket holding region 110d is provided, and the jacket holding region 110d is provided with a fourth concave groove 140 having a rectangular cross section and extending in the optical axis direction. The optical fiber 1 is provided inside the fourth concave groove 140.
Thirty jackets 131 (or MU ferrules) are housed. As shown in FIG. 10B, the jacket (or MU ferrule) 131 is attached to the first base 110 by a photo-setting or thermosetting resin 141. Fixed.

The fourth concave groove 140 may be formed by using a dicing saw or by etching.

Further, as the jacket holding region 110d, a jacket holding member provided separately from the first base 110 may be fixed to the first base 110.

(Fifth Embodiment) Hereinafter, an optical transceiver according to a fifth embodiment will be described with reference to FIG. The fifth embodiment relates to a modification of the mounting structure of the first light receiving elements 126, 226 for reception in the first or second embodiment. That is, the light having a wavelength of 1.55 μm is selectively transmitted or the light having a wavelength of 1.3 μm is selectively transmitted directly below the first light receiving elements 126 and 226 and directly above the optical fibers 130 and 230. Is provided with a filter 340 that reflects light. In FIG. 11A, reference numeral 341 denotes the first light receiving element 1 for reception.
26, 226 is a refractive index matching resin that is fixed to the base.

Hereinafter, the reason for providing the filter 340 will be described.

Of the light emitted from the semiconductor laser elements 111 and 211, a component having a large incident angle on the interface between the core layer and the clad layer of the optical fiber 130230 attenuates after passing through the core layer and proceeding to the clad layer. While
A component having a small incident angle propagates through the core layer. Therefore, in a portion of the optical fiber that is relatively far from the light incident end surface, almost no light component penetrates from the core layer to the cladding layer. However, a light component penetrating from the core layer to the cladding layer exists in a portion of the optical fiber that is relatively close to the light incident end face. In FIG. 11A, an arrow A indicates a light component traveling directly from the semiconductor laser elements 111 and 211 to the cladding layer, and an arrow B indicates a light component between the core layer and the cladding layer after being emitted from the semiconductor laser elements 111 and 211. The light component reflected at the interface toward the cladding layer is shown. The light component indicated by arrow A or arrow B is
When the light passes through the half mirrors 124 and 224 and enters the first light receiving elements 126 and 226 for reception, noise occurs. However, if the filter 340 is provided immediately below the first receiving light receiving elements 126 and 226, the light in the 1.3 μm wavelength band emitted from the semiconductor laser elements 111 and 211 is indicated by an arrow A or an arrow B. Since the components are removed by the filter 340, the first receiving light receiving elements 126, 2
It does not enter 26 and does not become noise. As a result, light in the 1.3 μm band is isolated.

FIG. 11B shows a modification of the fifth embodiment. Instead of providing the filter 340 directly below the first receiving light receiving elements 126 and 226, the first receiving light receiving element shown in FIG. Light receiving surfaces 126a, 226a of 126, 226
In addition, a coating layer that selectively transmits light in the wavelength band of 1.55 μm or selectively reflects light in the wavelength band of 1.3 μm is formed.

Although the first to fifth embodiments described above are directed to a two-wavelength band multiplexing optical transmitting / receiving apparatus, a WD that selectively reflects incident light of each wavelength band is described.
By increasing the number of M filters, an optical transceiver for wavelength multiplexing over three wavelength bands can be realized. For example, an optical transmitting / receiving device for wavelength multiplexing in three wavelength bands will be described.
While the light of the first wavelength band among the light of the first, second, and third wavelength bands transmitted from the center station is reflected upward at a position closest to the center station in the optical fiber,
A first WDM filter for transmitting light of the second and third wavelength bands is provided, and light of the second wavelength band is reflected upward at a position next to the center station next to the first WDM filter in the optical fiber. On the other hand, a second WDM filter that transmits light in the third wavelength band is provided, and the light in the third wavelength band transmitted from the center station is reflected upward at the farthest position from the center station in the optical fiber. On the other hand, a half mirror for transmitting light in the third wavelength band emitted from the semiconductor laser device is provided. In this case, in order to increase the reception light in one wavelength band, the length of the base is set to 1-2 m.
This can be dealt with by increasing the size by about m and providing an additional WDM filter and a light receiving element for reception.

(Method of Manufacturing Optical Transmitting / Receiving Device According to First Embodiment) A method of manufacturing the optical transmitting / receiving device according to the first embodiment will be described below with reference to FIGS.

First, the plan view of FIG.
A first electrode wiring 151, a second electrode wiring 152, a first upper electrode pad 153, and a second upper electrode pad 154 are formed on a silicon substrate 110A as shown in the side view of FIG. At the same time, the first optical fiber end holding region and the first
Is formed. Thereafter, as shown in FIG. 12C, the silicon substrate 110 is
A, a notch 1 is formed on the right side of the optical signal transmission area on the silicon substrate 110A.
16 are formed. By doing so, the silicon substrate 11
A first base 110 of OA is obtained.

Next, as shown in FIG. 12D, the semiconductor laser element 111 is mounted on the first electrode wiring 151, and the monitoring light receiving element 112 is mounted on the second electrode wiring 152. I do. Then, the semiconductor laser element 11
The first upper electrode and the first upper electrode pad 153 are wire-bonded, and the upper electrode of the monitor light receiving element 112 and the second upper electrode pad 154 are wire-bonded.

Next, the plan view of FIG.
A first receiving electrode pad 161 and a second receiving electrode pad 162 are formed on a GaAs substrate 120A as shown in the side view of FIG.
A marking line is formed in a region where the first cut groove 122 and the second cut groove 123 are formed. afterwards,
As shown in FIGS. 13C and 13D, when the third concave groove 121 is formed by a dicing saw, a second base 120 is obtained.

Next, as shown in FIG. 14A, the optical fiber 130 is housed in the third concave groove 121 of the second base 120 and fixed with resin. Then, as shown in FIG. As shown, the first cut groove 122 and the second cutout 122 are formed on the second base 120 and the optical fiber 130 by a dicing saw.
Is formed. Thereafter, FIG.
As shown in FIG. 5, a half mirror 124 is inserted into the first cut groove 122, and W is inserted into the second cut groove 123.
The DM filter 125 is inserted and fixed with a resin whose refractive index is matched.

Next, as shown in FIG. 14D, the first receiving light receiving element 126 and the second receiving light receiving element 127 are mounted on the second base 120, respectively.
4 (e), the second base 120 is fixed to a predetermined area on the first base 110. afterwards,
The fiber pressing member 115 is fixed to the optical fiber end holding area of the first base 110, and the incident part of the optical fiber 130 is held.

Next, as shown in FIG. 15A, after the first base 110 is fixed on the package 155 with silver paste having excellent heat conductivity, the jacket (or MU ferrule) of the optical fiber 130 is formed. ) 131 is fixed to the package 155 with resin. After that, as shown in FIG. 15B, the first electrode wiring 151 and the second electrode wiring 1
52, a first upper electrode pad 153, a second upper electrode pad 154, a first receiving electrode pad 161 and a second receiving electrode pad 162, respectively.
5 is wire-bonded to each of the electrode pads formed.

Next, as shown in FIG. 15C, when a cap 156 is fixed to the package 155 and easily sealed, an optical transceiver is obtained.

(Sixth Embodiment) Hereinafter, the structure of an optical semiconductor module according to a sixth embodiment will be described with reference to FIGS.

On the left side of FIG. 16 of the base 400 made of silicon, for example, a semiconductor laser element 410 for emitting laser light in the 1.3 μm band and the intensity of the laser light emitted from the semiconductor laser element 410 are monitored. A monitoring light receiving element 420 composed of a photodiode is mounted. The monitoring light-receiving element 420 is preferably of a waveguide type.
It is preferable that the light-receiving sensitivity be linear and sufficiently high in the wavelength band of the laser light emitted from.

A base concave groove 401 having a trapezoidal cross section extending in the optical axis direction is formed in the base 400 by etching, and a notch groove 402 having a rectangular cross section extending in a direction perpendicular to the optical axis is formed by etching and dicing. The single mode optical fiber 430 is housed in the concave groove 401 of the base with the end face of the optical fiber 430 abutting against the stopper wall surface 402 a of the cut groove 402.

Incidentally, as the optical fiber 430, the laser beam emitted from the semiconductor laser element 410 is the optical fiber 4
The mode field diameter of the optical fiber 430 and the spot diameter of the semiconductor laser element 410 (the achievable range is 1.5 to 4.5) so that the light is coupled at the incident end face of the optical fiber 30 with high coupling efficiency.
It is about μm. It is preferable to select the mode field diameter of the optical fiber 430 such that the size of the optical fiber 430 is substantially the same as that of the optical fiber 430. Further, it is preferable that the incident end face of the optical fiber 430 is subjected to a non-reflection treatment in order to sufficiently suppress the effect of the external resonator due to the reflected light from the semiconductor laser element 410.

On the center of the base 400, the optical fiber 430 housed in the base concave groove 401 is placed.
A fiber holding member 440 that holds down to zero is provided. The fiber holding member 440 has a holding member concave groove 4 whose base is longer than the base concave groove 401.
The optical fiber 4 is formed by etching.
Numeral 30 is sandwiched between three wall surfaces of the concave groove 401 of the base and the bottom surface of the concave groove 441 of the holding member. In this case, the fiber pressing member 440 is fixed to the base 400 with a light curable resin or a thermosetting resin having a contracting property, and the optical fiber 430 is attached to the base 400 by the contracting force of the resin. Receiving the approaching force, it is securely held by the three points of the two wall surfaces of the base concave groove 401 and the bottom surface of the pressing member concave groove 441. Thereby, in the passive alignment method, 0.5 μm with respect to a direction perpendicular to the surface of the base 400.
m or less can be adjusted. Also, the optical fiber 43
No. 0 is the stopper wall surface 402 of the cut groove 402
a, the distance between the semiconductor laser element 410 and the incident end face of the optical fiber 430 is restricted.

Further, in the vicinity of the area where the semiconductor laser element 410 is mounted on the base 400, the wiring 403 for the laser element is formed by metal vapor deposition, and the area where the monitoring light receiving element 420 is mounted on the base 400. Are formed by metal vapor deposition in the vicinity of.

As a first feature of the sixth embodiment, a pair of quadrangular pyramid-shaped first base marks 405 for positioning the semiconductor laser element 410 is formed in the area of the base 400 where the semiconductor laser element 410 is mounted. A pair of quadrangular pyramid-shaped second base marks 406 for positioning the monitor light receiving element 420 are located at positions symmetrical to the optical axis on both sides, and the monitor light receiving element 420 is mounted on the base 400. Are formed by the same etching process using the same photomask as the base concave groove 401 at positions symmetrical with respect to the optical axis on both sides of the substrate.

Hereinafter, referring to FIGS. 19A to 19D, the base concave groove 401, the first base mark 405, and the second base mark 406 are formed by the same etching process using the same photomask. A method of forming will be described. Note that the first base mark 405 and the second base mark 406 are not actually located on the sides of the base concave groove 401, but for convenience of illustration, FIGS.
In (d), the first base mark 405 and the second base mark 405
The method for forming the base concave groove 401 and the base mark will be described on the assumption that any one of the base marks 406 is located near the base concave groove 401.

First, as shown in FIG. 19A, an SiO ₂ film 450 is deposited over the entire surface of a base 400 made of silicon, and then, as shown in FIG.
On the O ₂ film 450, a resist pattern 451 having respective openings in formation regions of the forming area and the base mark of the base concave groove 401.

Next, etching is performed on the SiO ₂ film 450 using the resist pattern 451 as a mask.
As shown in FIG. 19C, a mask 452 made of a SiO ₂ film 450 and having a groove opening 452a in a region where a base concave groove 401 is formed and having a mark opening 452b in a region where a base mark is formed was formed. After that, the resist pattern 451 is removed.

Next, as shown in FIG. 19D, the base 400 is subjected to crystal anisotropic etching using a mask 452 with a KOH-based etchant. In this case, in order to accurately form the base concave groove 401 having a trapezoidal cross section, the mask 452 is formed on the (100) plane of the base 400 made of silicon, and the groove opening 452 of the mask 452 is formed.
The position is adjusted so that the longitudinal direction of “a” is horizontal or perpendicular to the <110> direction of the base 400. In this case, the etching rate of the (111) plane which is the wall surface of the base concave groove 401 and the base mark is the bottom surface (1).
Since the etching rate of the (00) plane is about 1/100, if the (111) plane is exposed during the etching, the etching is substantially stopped. Therefore, even when the base concave groove 401 and the base mark are simultaneously etched from the groove opening 452a and the mark opening 452b formed on the mask 452 with respect to the base 400, a pattern is accurately formed. be able to. That is, the base concave groove 401 extending in the optical axis direction and the quadrangular pyramid base mark can be simultaneously etched. In this case, the width of the groove opening 452a of the mask 452 is appropriately set, and the etching is stopped when a desired depth of the base concave groove 401 is obtained. It can be formed in a trapezoidal shape. Also, the mask 45 on the base 400
Although slight overetching occurs in the lower part of 2,
By controlling the width dimension and the etching time of the groove opening 452a of the mask 452, a very fine and accurate pattern can be formed.

According to the first feature of the sixth embodiment, the first base mark 405 for positioning the semiconductor laser element 410 and the second base mark 406 for positioning the light receiving element 420 for monitoring are used as bases. Since the first and second base marks 405 and 406 are formed by the same etching process using the same photomask as that of the concave groove 401, the first and second base marks 405 and 406 do not shift with respect to the base concave groove 401. In addition, the monitor light receiving element 420 can be mounted with an optical axis deviation of 1 μm or less with respect to the base concave groove 401.

In addition, the first and second base marks 40
Since the edges 5 and 406 are formed by etching, the edges are sharper than the marks formed by the metal deposition method, and therefore, they are very excellent as a pattern for image recognition.

Further, the first and second base marks 40
5 and 406 are formed by the same etching process using the same photomask as that of the base concave groove 401, so that a special process for forming a mark is unnecessary, which is advantageous in cost. .

By the way, the first and second base marks 405 having a width of about 1 to 2 μm or 1 μm or less,
In the case of forming the mask 406, a desired pattern cannot be obtained by etching only by setting the width of the mark opening 452a of the mask 452 to about 1 to 2 μm or 1 μm or less. The reason is that the line width of the first and second base marks 405 and 406 is set to about 1 to 2 μm or 1 μm.
m, the width of the base concave groove 401 is 4
Since it is as large as about 00 to 200 μm, the base concave groove 40
1 and 2
Of the first and second base marks 405 and 406 are over-etched.
The line width of 406 is the mark opening 452b of the mask 452.
Is larger than the width by several μm.

The mark opening 45 of the mask 452 is also provided.
If the width of 2b is 5 μm or less, the mark opening 452b is closed by bubbles generated during etching, so that an etched area and an unetched area are formed, and the pattern is deformed. Sometimes. Therefore, it is extremely difficult to form the first and second base marks 405 and 406 having a width of 5 μm or less by etching.

Therefore, as shown in FIGS. 20A to 20C, a plurality of V-shaped grooves 455 or quadrangular pyramid pits 456 are formed adjacent to each other, and the V-shaped groove 455 and the quadrangular pyramid pits are formed. The first and second base marks 405 and 406 can be formed using the non-etched region 457 between the 456. FIG. 20C is a cross-sectional view taken along line XX-XX in FIGS. 20A and 20B. In this case, as shown in FIG. 21, by using over-etching, a mark pattern including a non-etched region 457 having a width: w of about 1 to 2 μm can be easily formed. If the condition of the amount of over-etching is accurately controlled, a mark pattern having a width of 1 μm or less can be formed.

As a second feature of the sixth embodiment, FIG.
As shown in FIG.
A third portion for determining the position of the semiconductor laser element 410 in the optical axis direction at the edge portion on the side of the second stopper wall surface 402a.
23 are formed and the base mark 407 of FIG.
As shown in FIG. 5, a pair of cross-shaped first laser marks 411 are formed at positions symmetrical with respect to the active region on both sides of the active region (indicated by a dashed line) on the back surface of the semiconductor laser element 410. And the semiconductor laser element 41
The second laser mark 412 is formed on the back surface of the laser beam at the edge portion on the laser light emitting end surface side. In FIG. 23, reference numeral 413 denotes a metal electrode formed on the back surface of the semiconductor laser element 410.

The cut groove 40 in the base 400
A third portion for determining the position of the semiconductor laser element 410 in the optical axis direction at the edge portion on the side of the second stopper wall surface 402a.
Is formed, the notch groove 40 is formed.
No. 2 needs to be diced with high precision to the position of the semiconductor laser element 410 in the optical axis direction. Therefore, FIG.
As shown in FIG. 5, an edge portion on the side of the stopper wall surface 402a on the bottom surface of the cut groove 402 of the base 400 includes
A groove forming mark 408 is formed.

(Seventh Embodiment) Hereinafter, as a seventh embodiment, a semiconductor laser device 410 in the method for manufacturing an optical semiconductor module according to the sixth embodiment will be described.
Will be described with reference to FIGS.

FIG. 25 is a schematic configuration diagram of a mounting apparatus for mounting the semiconductor laser element 410 on the base 400.
Stage 4 that can be moved in each of the axis, Z-axis, and θ-axis directions
Above 60, a substrate heater 461 holding the base 400 and heating the held base 400, a lower CCD camera 462 having a coaxial incident white light source,
A stage calibration marker 463 is provided. An upper stage 470 movable in the Y-axis direction is disposed above the lower stage 460.
The upper stage 470 is provided with a fixing tool 471 for holding the semiconductor laser element 410 and fixing the held semiconductor laser element 420 to the base 400, and an upper CCD camera 472 having a coaxial incident white light source. The stage calibration marker 463
Is provided to calibrate the relative position between the lower stage 460 and the upper stage 470 (align the origin).

FIG. 26 is a schematic view showing a mounting process for mounting the semiconductor laser element 410 on the base 400. In FIG. 26, reference numeral 464 denotes a lower monitor for displaying an image recognized by the lower CCD camera 462; Is the upper CCD
An upper monitor for displaying an image recognized by the camera 472,
A control device 480 drives the lower stage 460 and the upper stage 470 in response to the input of the image recognized by the lower CCD camera 462 and the image recognized by the upper CCD camera 472.

First, the stage calibration marker 463 is simultaneously observed by the lower CCD camera 462 and the upper CCD camera 472 to recognize the relative position between the lower stage 460 and the upper stage 470.

Next, the pair of first laser marks 41 of the semiconductor laser element 410 is moved by the lower CCD camera 462.
The first and second laser marks 412 are image-recognized, and information on the position of the semiconductor laser element 410 in the X-axis direction, the position in the Z-axis direction, and the shift angle θ with respect to the X-axis is obtained and stored.

Hereinafter, a pair of first laser marks 411 of the semiconductor laser element 410 are moved by the lower CCD camera 462.
FIGS. 23 and 25 to 25 show a method of recognizing an image of the second laser mark 412 and obtaining information on the position of the semiconductor laser element 410 in the X-axis direction, the position in the Z-axis direction, and the shift angle θ with respect to the X-axis. This will be described with reference to FIG.

First, as shown in FIG. 27A, after the image of the center of the right laser mark 411R of the pair of first laser marks 411 is recognized and stored, the lower stage 460 is moved. Then, as shown in FIG. 27B, the central part of the left laser mark 411L of the pair of first laser marks 411 is image-recognized and stored.

Next, from the position of the center of the left laser mark 411L and the position of the center of the right laser mark 411R, the position in the X-axis direction and the shift angle θ with respect to the X-axis are recognized, and the semiconductor laser The coordinates of the X axis of the element 410 on the XZ plane and the shift angle θ with respect to the X axis are stored.

Next, the lower stage 460 is moved to recognize the image of the center of the second laser mark 412 as shown in FIG.
The coordinates of the Z axis on the Z plane are stored.

Next, similarly, the upper CCD camera 47
2, a pair of first base marks 4 on the base 400
05 and the third base mark 407 are image-recognized, and information on the position of the base 400 in the X-axis direction, the position in the Z-axis direction, and the shift angle θ with respect to the X-axis is obtained and stored.

Next, the control procedure 480 sets the lower stage 46 so that the deviation angle θ of the base 400 with respect to the X axis coincides with the deviation angle θ of the semiconductor laser element 410 with respect to the X axis.
Rotate 0. Thereafter, control device 480 determines the position of semiconductor laser element 410 and base 400 in the X-axis direction and Z
The lower stage 460 is moved in the X-axis direction and the Z-axis direction so that the axial positions match.

Next, similarly, control device 480 moves upper stage 470 in the Y-axis direction so that the position of semiconductor laser element 410 and base 400 in the Y-axis direction coincide with each other, and fixes tool for fixing. The semiconductor laser element 410 is fixed to the base 400 by 471.

According to the seventh embodiment, the stage calibration marker 463 is simultaneously observed by the lower CCD camera 462 and the upper CCD camera 472 to recognize the relative position between the lower stage 460 and the upper stage 470. Since the lower CCD camera 462 recognizes each mark of the semiconductor laser element 410 and the upper CCD camera 472 recognizes each mark of the base 400, the relative position between the semiconductor laser element 410 and the base 400 is very accurate. Further, the lower CCD camera 462 recognizes each mark of the semiconductor laser element 410 and
Since the D camera 472 recognizes each mark of the base 400, that is, it is not necessary to recognize each mark of the semiconductor laser element 410 and the base 400 which are far apart by one CCD camera, the semiconductor laser element 410 and the base There is no danger that one of the marks 400 is defocused and the image is blurred.

Therefore, according to the seventh embodiment, the direction perpendicular to the optical axis in the plane parallel to the surface of the base 400 (X-axis direction)
With an accuracy of 1 μm or less, and in the optical axis direction (Z
(In the axial direction) with a precision of about 1 to 2 μm. In addition, the output end face of the semiconductor laser device 410 and the optical fiber
Since the distance from the incident end face 30 can be accurately controlled, the variation in the distance in the optical axis direction, which was several to several tens of μm in the conventional method, can be suppressed to about 1 to 2 μm.

Further, according to the seventh embodiment, the distance between the emission end face of the semiconductor laser element 410 and the incidence end face of the optical fiber 430 can be set to about 1 to 2 μm, so that the laser light emitted from the semiconductor laser It can be coupled to the incident end face of the optical fiber 430 with high coupling efficiency.
Note that the emission end face of the semiconductor laser element 410 and the optical fiber 4
The reason why the laser light emitted from the semiconductor laser element 410 can be coupled to the incident end face of the optical fiber 430 with high coupling efficiency by shortening the distance from the incident end face of the optical fiber 30 will be described later.

Although not described, the monitor light receiving element 420 is fixed to the base 400 in the same manner as the semiconductor laser element 410.

(Eighth Embodiment) Hereinafter, as an eighth embodiment, a step of mounting an optical fiber in a method of manufacturing an optical semiconductor laser module will be described with reference to FIGS.

As in the sixth embodiment, a semiconductor laser element and a monitor light receiving element are mounted on the left side of FIG. 28 of the base 400, but are not shown. As shown in FIGS. 28, 29 (a) and 29 (b), a base concave groove 401 having a trapezoidal cross section extending in the optical axis direction is formed in the base 400 by etching, and in a direction perpendicular to the optical axis. Is formed by etching and dicing, and the single mode optical fiber 430 is formed in the base concave groove 40.
The optical fiber 430 is stored in a state where the end face of the optical fiber 430 is in contact with the stopper wall surface 402 a of the cut groove 402. On the central portion of the base 400, the base concave groove 40 is provided.
A fiber pressing member 440 for pressing the optical fiber 430 housed in the base 1 to the base 400 is provided.

As a feature of the eighth embodiment, the optical fiber 430 is pressed against the base 400 with the fiber holding member 440 having a longer base length and a unchanged cross-sectional area than the base concave groove 401. The pressing concave groove 445 that functions, and is formed so as to be continuous with the pressing concave groove 445, and has a tapered cross-sectional area toward the right side in FIG.
An introduction concave groove 446 that functions to introduce 0 is formed.

According to the eighth embodiment, the optical fiber 43
The laser-side end at 0 is inserted into an introduction section composed of the base concave groove 401 and the introduction concave groove 446 of the fiber pressing member 440, and then pressed toward the laser side to form the base concave groove 401 and the fiber retainer. It reaches a pressing portion composed of the pressing concave groove 445 of the member 440. Thus, the optical axis can be adjusted to 1 μm or less by the passive alignment method.

(Ninth Embodiment) Hereinafter, as a ninth embodiment, a method for connecting optical fibers will be described.

FIG. 30 shows a calculation result (shown by a line) of the coupling efficiency of the single mode optical fiber with respect to the emission angle of the semiconductor laser device, using the mode field diameter of the single mode optical fiber as a parameter, and an experimental result (FIG. 30). (Indicated by dots). In this calculation, the distance between the semiconductor laser device and the optical fiber is 0 μm.

As can be seen from FIG. 30, the mode field diameter φ of the optical fiber, which is a parameter, is 15 μm,
When it is 0 μm, 6.3 μm, and 3.0 μm, the coupling efficiency is theoretically 100% when the emission angle of the semiconductor laser device is in the range of 0 ° to 30 °, which is common to all of these optical fibers.
I always have a point.

This is because, if the emission angle of the semiconductor laser device and the mode field diameter of the optical fiber are optimized without using a lens system, a high coupling efficiency close to 100% can be obtained. Is shown.

According to the experimental results, when the emission angle of the semiconductor laser device and the mode field diameter of the optical fiber are used in a combination that is close to the optimum, a high coupling efficiency exceeding 70% is obtained. In this experiment, the coupling efficiency was obtained only up to about 70 to 80% because the mode field pattern of the single mode optical fiber was almost perfect Gaussian, while the emission angle of the semiconductor laser device was Is considered to be a pattern deviating from Gaussian.

FIG. 31 shows an incident end face of an optical fiber having a mode field diameter φ of 10 μm, 6.3 μm, and 3.0 μm and an emission end face of the semiconductor laser element when a semiconductor laser element having an emission angle of 15 ° is used. 4 shows the calculation results of excess loss with respect to the distance to the distance. As can be seen from FIG. 31, even at the same distance, the smaller the mode field diameter of the optical fiber, the greater the rate of decrease in coupling efficiency.

However, when the distance in the z-axis direction is around 0 μm, the excess loss of the coupling efficiency is small in any of the optical fibers. Therefore, the shorter the distance between the semiconductor laser element and the optical fiber is, the more the excess loss becomes. It can be seen that the coupling efficiency can be reduced and the coupling efficiency can be increased.

FIG. 32 shows that the mode field diameter φ is 10 μm.
7 shows the relationship between the misalignment of the optical axis of the single-mode optical fiber of m, 6.3 μm, and 3.0 μm and the semiconductor laser device, and the excess loss.

According to the sixth and seventh embodiments, the position accuracy of the semiconductor laser device and the optical fiber in directions perpendicular to the optical axis (X-axis and Y-axis directions) is about 0.8 μm on average. The position accuracy of the semiconductor laser element and the optical fiber in the optical axis direction (Z-axis direction) is about 1.5 μm on average.
It is. Therefore, when the mode field diameter φ of the optical fiber is 6.3 μm, the coupling loss due to the displacement is reduced to 0.3.
When the mode field diameter φ of the optical fiber is 3.0 μm, the coupling loss due to the displacement can be suppressed to 2.0 dB or less.

First, when a semiconductor laser device having an emission angle of 15 ° is used and it is assumed that there is no displacement between the semiconductor laser device and the optical fiber, the mode field diameter φ of the optical fiber is 6.3 μm. In this case, the coupling efficiency between the semiconductor laser device and the optical fiber has an advantage of about 3 dB as compared with the case where the mode field diameter φ of the optical fiber is 10 μm.

Therefore, if the sum of the coupling loss and the connection loss is 1.5 dB or less, it is considered that there is an advantage.
According to the sixth and seventh embodiments, when the mode field diameter φ of the optical fiber is 6.3 μm, the coupling loss due to the displacement can be suppressed to 0.8 dB, so that the connection loss of the fiber is kept within 0.7 dB. Then you have an advantage.

Next, assuming that a semiconductor laser device having an emission angle of 15 ° is used and there is no displacement between the semiconductor laser device and the optical fiber, the mode field diameter φ of the optical fiber is 3.degree. When the diameter is 0 μm, the coupling efficiency between the semiconductor laser element and the optical fiber has an advantage of about 2.0 dB as compared with the case where the mode field diameter φ of the optical fiber is 10 μm.

Therefore, if the sum of the coupling loss and the connection loss is 2.5 dB or less, it is considered that there is an advantage.
According to the sixth and seventh embodiments, when the mode field diameter φ of the optical fiber is 3.0 μm, the coupling loss due to displacement can be suppressed to 2.0 dB, so that the connection loss of the optical fiber is within 0.5 dB. If you do, you have an advantage.

First, consider a case where an optical fiber having a core diameter of 3.0 μm and an optical fiber having a core diameter of 10 μm are connected.

By the way, the connection loss at the time of optical fiber connection is about 9 if the mode field diameter difference is 120%.
The coupling efficiency is 5% (-0.2 dB).

Since the ratio between the core diameter of 3.0 μm and the core diameter of 10 μm is about 330%, if a simple connection method is adopted, and if the difference between the core diameters is 120%, the core diameter becomes 3.0%. In order to connect an optical fiber having a diameter of 0 μm and an optical fiber having a core diameter of 10 μm, six stages of optical fibers are required as optical fibers of a buffer. In this case, the coupling loss is as high as 1.4 dB.

Therefore, it is preferable to connect the optical fibers by fusion. When an optical fiber is connected by fusion, the connection loss is 0.5 when the core diameter ratio is 160%.
When the core diameter ratio is 150%, the connection loss can be suppressed to about 0.3 dB. When the core diameter ratio is 140%, the connection loss can be suppressed to about 0.2 dB.
If the core diameter ratio is 30%, the connection loss can be suppressed to about 0.1 dB.

When optical fibers are connected by fusion and the difference in core diameter is made 130%, when an optical fiber having a core diameter of 3.0 μm and an optical fiber having a core diameter of 10 μm are connected, the light of a buffer is connected. Four-stage optical fiber is sufficient as the fiber. In this case, the coupling loss can be suppressed to 0.6 dB.

Next, consider a case where an optical fiber having a core diameter of 6.3 μm and an optical fiber having a core diameter of 10 μm are connected.

Since the ratio between the core diameter of 6.3 μm and the core diameter of 10 μm is about 160%, a simple connection method is adopted, and if the difference between the core diameters is 120%, the core diameter becomes 6.6. In order to connect an optical fiber having a diameter of 3 μm and an optical fiber having a core diameter of 10 μm, only one optical fiber is required as an optical fiber of a buffer. In this case, the coupling loss can be suppressed to 0.2 dB. In this case, even if they are directly connected, a loss of about 0.5 dB is sufficient.

(Tenth Embodiment) Hereinafter, as a tenth embodiment, a method of mounting a semiconductor laser device having a double channel structure will be described.

FIGS. 35 and 36 show an optical laser module in which a semiconductor laser element 510 having a double channel structure is mounted on a base 500. FIG.

As shown in FIG. 35, the semiconductor laser device 5
10 is fixed to the surface of the base 500 by solder 520. A mesa-type stripe region 511, an active layer 512, and a current block layer 513 are formed in the main body of the semiconductor laser device 510.
A pair of recesses 515 are formed on both sides of the active layer 512 on the bottom surface of the pair 10. The metal film 51 is formed on the entire bottom surface of the semiconductor laser device 510 including the concave portion 515.
6, an electrode 517 is provided below the active layer 512 on the metal film 516, and an insulating film 518 is provided between the metal film 516 and the main body of the semiconductor laser device 510. Is formed.

On the other hand, at positions on both sides of the active layer 512 of the semiconductor laser device 510 on the upper surface of the base 500,
First V-shaped groove 501 and second V-shaped groove 50 having V-shaped cross section
2 are formed by the same etching process using the same mask as the base concave groove 101 shown in FIG. 1, whereby the first V-shaped groove 5 on the upper surface of the base 500 is formed.
A convex portion 503 having a trapezoidal cross section remains in the region to be etched between the first V-shaped groove 01 and the second V-shaped groove 502. The first V
As a method for forming the V-shaped groove 501 and the second V-shaped groove 502, it is preferable to employ the method described with reference to FIGS. In this case, an extremely narrow width dimension, for example, 1 μm
The convex portion 503 having the following width dimensions can be formed.

According to the tenth embodiment, the convex portions 503
Is formed by the same etching process using the same mask as the concave groove for storing the optical fiber of the base, so that there is no displacement between the convex portion 503 and the concave groove for storing the optical fiber. For this reason, when fixing the semiconductor laser element 510 to the base 500,
The semiconductor laser element 510 is mounted on the base 500 without causing a positional deviation in the direction perpendicular to the optical axis with respect to the base 500 when the center line of the base 500 and the convex portion 503 of the base 500 are aligned. When aligning the center line of the semiconductor laser element 510 with the convex portion 503 of the base 500, the positional relationship can be easily confirmed by enlarging both with a stereoscopic microscope or the like.

[0206]

According to the first optical transmitting / receiving apparatus, one end of the semiconductor laser element and the optical fiber, which are required to have an accurate positional relationship with each other, are held by the first base while being inserted into the main body of the optical fiber. The receiving light receiving element, which requires an accurate positional relationship with respect to the reflection type filter, is held on the second base together with the reflection type filter, so that the semiconductor laser element and one end of the optical fiber are fixed to the first base. In this case, it is only necessary to consider the positional relationship between them, and when fixing the reflective filter and the light receiving element for reception to the second base, it is only necessary to consider the positional relationship between them. And one end of the optical fiber can be easily fixed in a state where the positional relationship between the two is accurately maintained, and the reflection type filter and the light receiving element for reception can be fixed in the positional relationship between the two. It can be fixed easily in a state of maintaining accurate. Therefore, the optical transmission / reception device according to the present invention facilitates optical axis adjustment on the order of submicrons by the passive alignment method.

According to the second optical transmitting / receiving apparatus, when fixing one end of the semiconductor laser element and the optical fiber to the first base, it is only necessary to consider the positional relationship between the two.
When fixing the reflection type filter and the receiving light receiving element to the second base, it is only necessary to consider the positional relationship between them, so that the semiconductor laser element and one end of the optical fiber accurately maintain the positional relationship between them. In this state, the reflection type filter and the receiving light receiving element can be easily fixed in a state in which the positional relationship between the two is accurately maintained. Therefore, the optical transmitting and receiving device according to the present invention,
Optical axis adjustment on the order of submicrons is facilitated by the passive alignment method.

Further, after an output test is performed on the semiconductor laser device held by the first base fixed to the package, the second base holding the main body of the optical fiber can be fixed to the package. Further, it is possible to reduce a loss caused by coupling an optical fiber to a defective semiconductor laser device.

In the first or second optical transmission / reception device, if the first base has the optical axis direction positioning means, the position of one end of the optical fiber in the optical axis direction, and thus the first base, Since the distance between the fixed semiconductor laser element and one end of the optical fiber can be restricted, the coupling efficiency of light emitted from the semiconductor laser element at one end of the optical fiber can be improved.

In the first or second optical transmission / reception device, if the fiber end holding means has the optical axis vertical in-plane positioning means, the position of one end of the optical fiber in the plane perpendicular to the optical axis can be determined. Since it can be regulated, the coupling efficiency of the light emitted from the semiconductor laser element at one end of the optical fiber can be improved.

In the first or second optical transmission / reception device, the positioning means in the plane perpendicular to the optical axis has a pair of wall surfaces approaching each other from the opening side to the bottom side, and has a concave shape for holding one end of the optical fiber. When the groove and the pressing member that presses one end of the optical fiber against the pair of wall surfaces of the concave groove are provided, three ends of the optical fiber can be supported by the pair of wall surfaces of the concave groove and the pressing member. Therefore, the position of one end of the optical fiber in a plane perpendicular to the optical axis can be reliably regulated.

In the first or second optical transmission / reception device, the fiber end holding means includes a concave groove for holding one end of the optical fiber, and a resin introduction extending in a direction intersecting the concave groove and communicating with the concave groove. When the optical fiber is provided, the resin can be reliably introduced into the concave groove from the resin introduction groove, so that the optical fiber can be securely fixed to the concave groove.

In the first or second optical transmission / reception device, the fiber end holding means includes a concave groove for holding one end of the optical fiber, and a resin discharge extending in a direction intersecting the concave groove and communicating with the concave groove. And the remaining resin supplied to the concave groove and used for fixing the optical fiber can be discharged to the outside from the resin discharge groove, so that the resin overflowing from the concave groove is in the vicinity of the semiconductor laser element. Can be prevented, so that the characteristics of the semiconductor laser element can be prevented from deteriorating.

In the first or second optical transmission / reception device, if a reflection film is provided between the reflection type filter and the reception light receiving element, the transmission light signal emitted from the semiconductor laser element receives the reception light signal. Can be prevented from entering the
Even if the light receiving element for reception is arranged near the semiconductor laser element, noise generated by the optical signal for transmission can be prevented.

When the first or second optical transmission / reception device includes the wavelength selective reflection type filter and another reception light receiving element, the reception light of a plurality of wavelength bands incident from the other end of the optical fiber. The receiving optical signal of the predetermined wavelength band among the signals is reflected by the wavelength selective reflection type filter, and the reflected receiving optical signal of the predetermined wavelength band can be received by another receiving light receiving element. The received optical signals for a plurality of wavelength bands can be separately received.

In this case, if a filter for selectively transmitting a receiving optical signal in a predetermined wavelength band is provided between the wavelength selective reflection type filter and another receiving light receiving element, the other receiving light receiving element may be used. Noise generated by the transmitting optical signal incident on the optical signal and the receiving optical signal outside the predetermined wavelength band can be prevented.

In the first or second optical transmission / reception device, the semiconductor laser element is provided on the first base, and the optical axis of light emitted from the semiconductor laser element has a predetermined inclination angle with respect to the optical axis of the optical fiber. When the light is emitted from the semiconductor laser device, it is difficult for the light reflected by the incident portion of the optical fiber to re-enter the active layer region of the semiconductor laser device. Can be secured.

In this case, when the predetermined inclination angle is 2 to 3 °, it is possible to achieve both improvement of the return loss and prevention of reduction of the coupling efficiency.

According to the third optical transmitting / receiving device, the distance between the semiconductor laser device fixed to the first base and one end of the optical fiber can be regulated, and the distance perpendicular to the optical axis of the one end of the optical fiber can be controlled. Since the position in the plane can be regulated, the coupling efficiency of the light emitted from the semiconductor laser element at one end of the optical fiber can be improved.

[0220] In the third optical transmitting and receiving apparatus, the fiber end holding means has a pair of wall surfaces approaching each other from the opening side to the bottom side, and has a concave groove for holding one end of the optical fiber. And a pressing member for pressing one end of the optical fiber against the pair of wall surfaces of the concave groove, the three end portions of the optical fiber can be supported by the pair of wall surfaces of the concave groove and the pressing member. The position of the one end in a plane perpendicular to the optical axis can be reliably restricted.

According to the method of manufacturing an optical transceiver of the present invention, the second base to which the main body of the optical fiber, the reflection filter and the light receiving element for reception are fixed is fixed to the first base. After the base and the second base are provided separately, the second base can be fixed to the first base, so that the semiconductor laser device, one end and main body of the optical fiber, the reflection type filter, In addition, as compared with a manufacturing method in which a light receiving element for reception is fixed to one base, an assembly process is facilitated, and an optical transmitting and receiving apparatus capable of adjusting an optical axis on the order of submicrons by a passive alignment method is easily and reliably manufactured. be able to. In this case, after fixing the reflection type filter to the second base,
Since the receiving light receiving element is fixed above the optical fiber body holding groove in the second base, the positional relationship between the reflection type filter and the receiving light receiving element is accurately regulated, and the first base is fixed to the first base. After fixing the semiconductor laser device,
Since one end of the optical fiber is fixed in the concave groove for holding the end of the optical fiber formed in the first base, the positional relationship between the semiconductor laser element and one end of the optical fiber is also accurately regulated.

In the method for manufacturing an optical transceiver according to the present invention, in the base fixing step, the position of one end of the optical fiber in the direction of the optical axis and the position in the plane perpendicular to the optical axis are regulated. Is fixed to the first base, the distance between the semiconductor laser element fixed to the first base and one end of the optical fiber, and the plane perpendicular to the optical axis of the one end of the optical fiber Because you can regulate the position,
It is possible to manufacture an optical transmitting and receiving apparatus having excellent coupling efficiency at one end of an optical fiber for light emitted from a semiconductor laser element.

In the method of manufacturing an optical transceiver according to the present invention, the step of forming a concave groove includes the step of forming a resin introduction groove communicating with the concave groove for holding the end of the optical fiber, and the step of fixing the base includes the step of fixing one end of the optical fiber. Is fixed by the resin supplied from the groove for resin introduction to the concave groove for holding the end of the optical fiber, the resin can reliably flow into the concave groove for holding the end of the optical fiber. The fiber can be securely fixed.

According to the first optical semiconductor module, since the alignment mark is formed by the same photolithography and the same etching as the concave groove, the alignment mark is located between the alignment mark formed on the base and the concave groove. Since there is no displacement, the displacement between the semiconductor laser device positioned by the alignment mark and the optical fiber housed in the concave groove can be greatly reduced, and thereby the laser light The coupling efficiency to the fiber can be improved.

In the first optical semiconductor module, when the alignment mark includes a pair of side alignment marks formed at positions symmetrical with respect to the optical axis of the base, the base between the semiconductor laser element and the base is provided. Position deviation in the direction perpendicular to the optical axis in a plane parallel to the surface of the base, so that the laser light emitted from the semiconductor laser device and the optical fiber are perpendicular to the optical axis in a plane parallel to the surface of the base. Therefore, the coupling efficiency of the laser beam to the optical fiber can be greatly improved.

In the first optical semiconductor module, if the alignment mark includes a base edge alignment mark formed at the edge of the cut groove in the base with the wall surface on the semiconductor laser side, the gap between the semiconductor laser element and the base may be reduced. Since the positional deviation in the optical axis direction and, consequently, the variation in the distance between the emission end face of the semiconductor laser element and the incidence end face of the optical fiber can be reduced, the distance between the emission end face of the semiconductor laser element and the incidence end face of the optical fiber can be reduced. Since the length can be shortened, the coupling efficiency of the laser light to the optical fiber can be greatly improved.

In the first optical semiconductor module, the alignment mark is formed by a pair of side alignment marks formed at positions symmetrical with respect to the optical axis of the base, and an edge between a cut groove of the base and a wall surface of the semiconductor laser side. Including the base edge alignment mark formed in the portion, between the laser light emitted from the semiconductor laser element and the optical fiber, the positional deviation in the direction parallel to the optical axis in a plane parallel to the surface of the base, and Since the variation in the distance between the emission end face of the semiconductor laser element and the incidence end face of the optical fiber can be reduced, the coupling efficiency of the laser light to the optical fiber can be further improved.

If the first optical semiconductor module has a laser edge alignment mark formed on the optical fiber side edge on the bottom surface of the semiconductor laser device,
Since the positional deviation between the semiconductor laser element and the base in the optical axis direction and, consequently, the variation in the distance between the emission end face of the semiconductor laser element and the incidence end face of the optical fiber can be reduced, the emission end face of the semiconductor laser element and the optical fiber can be reduced. Can be shortened, and the coupling efficiency of the laser light to the optical fiber can be greatly improved.

In this case, if the base alignment mark includes a base edge alignment mark formed at the edge of the cut groove in the base with the wall surface on the semiconductor laser side, the emission end face of the semiconductor laser element and the incidence end face of the optical fiber are provided. And the distance between the emission end face of the semiconductor laser device and the incidence end face of the optical fiber can be further reduced, so that the coupling efficiency of the laser light to the optical fiber can be further improved. Can be.

According to the second optical semiconductor module of the present invention, the alignment mark is formed between the pair of V-shaped grooves formed at positions symmetrical with respect to the optical axis of the base. Since the semiconductor laser device and the base include a convex alignment mark composed of a portion, the positional deviation in a direction perpendicular to the optical axis in a plane parallel to the surface of the base between the semiconductor laser device and the base can be reduced. The displacement between the laser light and the optical fiber in a direction perpendicular to the optical axis in a plane parallel to the surface of the base can be reduced, thereby greatly improving the coupling efficiency of the laser light to the optical fiber. In this case, since the semiconductor laser element has a double channel structure and it is not necessary to form an electrode in a region where a pair of V-shaped grooves is formed in the base, a pair of V-shaped grooves is formed. It can be formed.

In the second semiconductor optical module, since a pair of grooves having a V-shaped cross section does not cause displacement between the convex alignment mark and the concave groove, the semiconductor laser device positioned by the convex alignment mark is used. And the positional deviation between the optical fiber and the optical fiber accommodated in the concave groove can be greatly reduced, so that the coupling efficiency of the laser light to the optical fiber can be greatly improved.

[Brief description of the drawings]

FIGS. 1A and 1B show an optical transceiver according to a first embodiment, FIG. 1A is a cross-sectional view taken along the line Ia-Ia in FIG. 1B, and FIG. is there.

FIGS. 2A and 2B show an optical transceiver according to the first embodiment, and FIG. 2A shows IIa-IIa in FIG.
FIG. 1B is a cross-sectional view of FIG.
It is sectional drawing of the IIb line.

FIGS. 3A and 3B show an optical transmitting and receiving apparatus according to a first modification of the first embodiment, and FIG.
It is sectional drawing of the IIIa-IIIa line, (b) is a top view.

FIG. 4 is a partial cross-sectional view of an optical transceiver according to a second modification of the first embodiment.

FIG. 5 is a partial plan view of an optical transceiver according to a third modification of the first embodiment.

6A and 6B show an optical transceiver according to a second embodiment, FIG. 6A is a cross-sectional view taken along the line VIa-VIa in FIG. 6B, and FIG. 6B is a plan view. is there.

FIG. 7 shows an optical transceiver according to a second embodiment, and is a cross-sectional view taken along the line VII-VII in FIG.

FIG. 8 is a plan view of an optical transceiver according to a third embodiment.

FIGS. 9A to 9C show an optical transceiver according to a third embodiment, FIG. 9A is a cross-sectional view taken along line IXa-IXa in FIG. 8, and FIGS. FIG. 7B is a plan view, and FIG. 7C is a perspective view, showing a resin discharge groove of the optical transceiver according to the third embodiment.

10A and 10B show an optical transceiver according to a fourth embodiment, wherein FIG. 10A is a cross-sectional view, and FIG. 10B is a cross-sectional view taken along line Xb-Xb in FIG. is there.

11A is a partial cross-sectional view of an optical transceiver according to a fifth embodiment, and FIG. 11B is a light receiving surface of a first light receiving element of the optical transceiver according to the fifth embodiment. FIG.

FIGS. 12A to 12E show respective steps of a method for manufacturing the optical transceiver according to the first embodiment; FIGS.
Is a plan view, and (b) to (d) are side views.

13 (a) to 13 (d) show respective steps of a method for manufacturing the optical transceiver according to the first embodiment, FIG. 13 (a) is a plan view, and FIGS. 13 (b) and 13 (c) are side views. And (d) is a sectional view.

FIGS. 14A to 14E are side views showing each step of the method for manufacturing the optical transceiver according to the first embodiment.

FIGS. 15A to 15C show steps of a method for manufacturing the optical transceiver according to the first embodiment, and FIGS.
Is a cross-sectional view, and (b) is a plan view.

FIG. 16 is a plan view of an optical semiconductor module according to a sixth embodiment.

FIG. 17 is a front view of an optical semiconductor module according to a sixth embodiment.

FIG. 18 is a right side view of the optical semiconductor module according to the sixth embodiment.

FIGS. 19A to 19C are cross-sectional views illustrating steps of forming a base concave groove and first to third base marks in the method for manufacturing an optical semiconductor module according to the sixth embodiment; (D) shows a method of manufacturing the optical semiconductor module according to the sixth embodiment, in which the base concave groove and the first to third grooves are provided.
FIG. 4 is a perspective view illustrating a step of forming a base mark.

FIGS. 20A to 20C show V-shaped grooves and quadrangular pyramid pits serving as first to third base marks in the optical semiconductor module according to the sixth embodiment; FIGS. (b) is a plan view, and (c) is a cross-sectional view taken along line XX-XX in (a) and (b).

FIG. 21 is a cross-sectional view showing a method of forming V-shaped grooves and quadrangular pyramid pits serving as first to third base marks in the optical semiconductor module according to the sixth embodiment.

FIG. 22 is a plan view showing a part of an optical semiconductor module according to a sixth embodiment.

FIG. 23 is a bottom view of the semiconductor laser device of the optical semiconductor module according to the sixth embodiment.

FIG. 24 is a plan view of a base of the optical semiconductor module according to the sixth embodiment.

FIG. 25 is a schematic configuration diagram of a mounting device used in a method of manufacturing an optical semiconductor module according to a seventh embodiment.

FIG. 26 is a schematic diagram illustrating a step of mounting a semiconductor laser element as a base in the method for manufacturing an optical semiconductor module according to the seventh embodiment.

FIGS. 27A to 27C are partial plan views of a semiconductor laser device for explaining the alignment between a semiconductor laser device and a base in the method for manufacturing an optical semiconductor laser module according to the seventh embodiment; is there.

FIG. 28 is a plan view illustrating a step of mounting an optical fiber as a base in the method for manufacturing an optical semiconductor module according to the eighth embodiment.

FIG. 29A is a front view illustrating a step of mounting an optical fiber on a base in the method for manufacturing an optical semiconductor module according to the eighth embodiment, and FIG. 29B is a front view illustrating the light according to the eighth embodiment. It is a perspective view explaining the process of mounting based on an optical fiber in the manufacturing method of a semiconductor module.

FIG. 30 is a diagram for explaining a method of connecting optical fibers according to the ninth embodiment, and illustrates an emission angle of the semiconductor laser device, an optical fiber coupling efficiency, and a mode field diameter of the optical fiber as parameters. FIG. 4 is a characteristic diagram showing the relationship of FIG.

FIG. 31 is a view for explaining a method of connecting optical fibers according to the ninth embodiment, wherein the distance between the semiconductor laser element and the optical fiber and excess loss are set using the mode field diameter of the optical fiber as a parameter. FIG. 4 is a characteristic diagram showing a relationship between

FIG. 32 is a view for explaining the method of connecting optical fibers according to the ninth embodiment, wherein the optical axis displacement between the semiconductor laser element and the optical fiber is set using the mode field diameter of the optical fiber as a parameter. FIG. 4 is a characteristic diagram illustrating a relationship between an amount and an excess loss.

FIG. 33 shows the relationship between the inclination angle α of the semiconductor laser element and the return loss at the coupling portion between the semiconductor laser element and the optical fiber in the optical transceiver according to the third modification of the first embodiment. FIG.

FIG. 34 is a diagram illustrating a relationship between an inclination angle of a semiconductor laser element and excess loss in an optical transceiver according to a third modification of the first embodiment.

FIG. 35 is a sectional view showing a part of the optical semiconductor module according to the tenth embodiment.

FIG. 36 is a perspective view showing a part of the optical semiconductor module according to the tenth embodiment.

37 (a) and (b) show a conventional optical transmitting / receiving device, (a) is a schematic plan view, and (b) is a cross-sectional view taken along line AA in (a).

FIG. 38 is a perspective view illustrating a positioning step in a conventional method for manufacturing an optical semiconductor module.

[Explanation of symbols]

110 first base 110a optical signal transmitting area 110b optical fiber end holding area 110c optical signal receiving area 110d jacket holding area 110A silicon substrate 111 semiconductor laser element 112 monitoring light receiving element 113 first concave groove 114 second concave groove 115 Fiber holding member 116 Notch 117 Fiber stopper 118 Alignment mark 120 Second base 120A GaAs substrate 121 Third concave groove 122 First cut groove 123 Second cut groove 124 Half mirror 125 WDM filter 126 First Receiving light receiving element 126a Light receiving surface 127 Second receiving light receiving element 130 Optical fiber 130a Incident part 131 Jacket (or MU ferrule) 140 Fourth concave groove 141 Resin 151 First electrode arrangement 152 Second electrode wiring 153 First upper electrode pad 154 Second upper electrode pad 155 Package 156 Cap 161 First receiving electrode pad 162 Second receiving electrode pad 163 200 Base 200a Optical signal transmission area 200b Optical fiber end holding area 200c Optical signal receiving area 201 Concave groove 202 Notch 203 Fiber stopper 204 Fiber pressing member 204a Convex part 205 Resin 206 Alignment mark 207 First cut groove 208 Second cut groove 211 Semiconductor laser Element 212 Monitor light receiving element 224 Half mirror 225 WDM filter 226 First receiving light receiving element 226a Light receiving surface 227 Second receiving light receiving element 230 Optical fiber 230a Incident part 300 Base 300a Light Signal transmission area 300c Optical signal reception area 301 Concave groove 302 Notch section 303 Fiber stopper 304 Resin supply groove 305 Resin supply concave section 306 Resin discharge groove 311 Semiconductor laser element 330 Optical fiber 340 Filter 341 Refractive index matching resin 400 Base 401 Base concave groove 402 Notch groove 402a Stopper wall 403 Laser element wiring 404 Light receiving element wiring 405 First base mark 406 Second base mark 407 Third base mark 408 Groove forming mark 410 Semiconductor laser element 411 First Laser mark 412 second laser mark 413 metal electrode 420 monitoring light receiving element 430 optical fiber 440 fiber pressing member 441 pressing member concave groove 450 SiO ₂ film 451 resist pattern 452 Mask 452a Groove opening 452b Mark opening 455 V-shaped groove 456 Square pyramid pit 457 Non-etched area 460 Lower stage 461 Substrate heater 462 Lower CCD camera 463 Stage calibration marker 464 Lower monitor 470 Upper Stage 471 Fixing tool 472 Upper CCD camera 480 Controller 500 Base 501 First V-shaped groove 502 Second V-shaped groove 503 Convex portion 510 Semiconductor laser element 511 Stripe region 512 Active layer 513 Current block layer 515 Concave groove 516 Metal film 517 Electrode 520 Solder

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Masahiro Mitsuda 1006 Kazuma Kadoma, Kadoma City, Osaka Matsushita Electric Industrial Co., Ltd.

Claims (25)

[Claims] An optical fiber for transmitting an optical signal for transmission and receiving an optical signal for reception, an optical signal transmission area and an optical signal reception area spaced apart from each other, and an optical signal transmission area and an optical signal reception A first base having a fiber end holding area between the first base and an optical signal transmission area of the first base;
A semiconductor laser element that emits a transmission optical signal; one end of the optical fiber that is provided in a fiber end holding area of the first base and that receives a transmission optical signal emitted from the semiconductor laser element; Fiber end holding means for holding the first base, fixed to the optical signal receiving area of the first base,
A second base that holds the main body of the optical fiber; and a second base that is held so as to be inserted into the second base and the main body of the optical fiber, for transmission emitted from the semiconductor laser element. A reflection filter that transmits an optical signal and reflects a reception optical signal incident from the other end of the optical fiber; a reception filter fixed to the second base and reflected by the reflection filter; An optical transmitting and receiving device comprising: a receiving light receiving element for receiving an optical signal for use. 2. A package, an optical fiber for transmitting a transmission optical signal and receiving a reception optical signal, and an optical signal transmission region and an optical signal reception fixed to a bottom portion of the package and spaced apart from each other. A first base having an area, and having a fiber end holding area between an optical signal transmission area and an optical signal reception area; fixed to the optical signal transmission area of the first base;
A semiconductor laser element that emits a transmission optical signal; one end of the optical fiber that is provided in a fiber end holding area of the first base and that receives a transmission optical signal emitted from the semiconductor laser element; A fiber end holding means for holding the optical fiber, a second base fixed to the bottom of the package and holding a main body of the optical fiber, and a main body of the second base and the optical fiber. A reflection filter that is held so as to be inserted into the portion and transmits a transmission optical signal emitted from the semiconductor laser element and reflects a reception optical signal incident from the other end of the optical fiber. And a receiving light receiving element fixed to the second base and receiving a receiving optical signal reflected by the reflection type filter. Communication device. 3. The optical system according to claim 1, wherein the first base has optical axis direction positioning means for regulating a position of one end of the optical fiber in an optical axis direction. Optical transceiver. 4. The fiber end holding means has an optical axis vertical in-plane positioning means for regulating a position of one end of the optical fiber in a plane perpendicular to the optical axis. Item 3. The optical transceiver according to item 1 or 2. 5. The optical axis vertical in-plane positioning means is formed in the fiber end holding area of the first base so as to extend in the optical axis direction, and a pair approaching each other from the opening side toward the bottom side. A concave groove holding one end of the optical fiber, and one end of the optical fiber fixed to the first base above the concave groove and held by the concave groove. The optical transceiver according to claim 1, further comprising a pressing member that presses against a pair of wall surfaces of the concave groove. 6. The fiber end holding means is formed in the fiber end holding area of the first base so as to extend in the optical axis direction, and has a concave groove holding one end of the optical fiber; A resin introduction groove formed in the fiber end holding region of the first base so as to extend in a direction intersecting the concave groove and communicate with the concave groove, and to introduce supplied resin into the concave groove; The optical transceiver according to claim 1, further comprising: 7. The fiber end holding means is formed in the fiber end holding area of the first base so as to extend in the optical axis direction, and has a concave groove holding one end of the optical fiber; A resin discharge portion is formed in the fiber end holding region of the first base so as to extend in a direction intersecting the concave groove and communicate with the concave groove, and discharge resin supplied to the concave groove to the outside. The optical transceiver according to claim 1, further comprising a groove. 8. The semiconductor device according to claim 1, further comprising a reflection film between the reflection type filter and the reception light receiving element, the reflection film reflecting a transmission optical signal emitted from the semiconductor laser element. Or the optical transmitting and receiving device according to 2. 9. The optical fiber is held so as to be inserted on the other end side of the optical fiber with respect to the main body portion of the optical fiber and the reflection filter in the second base, and is emitted from the semiconductor laser element. A wavelength selective reflection type that transmits a transmission optical signal and selectively reflects a reception optical signal of a predetermined wavelength band among reception optical signals of a plurality of wavelength bands incident from the other end of the optical fiber. The filter further comprising: a filter; and another receiving light receiving element fixed to the second base and receiving a receiving optical signal reflected by the wavelength selective reflection filter. 3. The optical transceiver according to 1 or 2. 10. The apparatus according to claim 1, further comprising a filter between the wavelength selective reflection type filter and the other light receiving element for receiving, the filter selectively transmitting the optical signal for reception in the predetermined wavelength band. The optical transceiver according to claim 9. 11. The semiconductor laser device is fixed to the first base such that an optical axis of light emitted from the semiconductor laser device has a predetermined inclination angle with respect to an optical axis of the optical fiber. 3. The method according to claim 1, wherein
An optical transmitting / receiving device according to claim 1. 12. The optical transceiver according to claim 11, wherein the predetermined inclination angle is 2 to 3 degrees. 13. An optical fiber for transmitting an optical signal for transmission and receiving an optical signal for reception, an optical signal transmission area and an optical signal reception area spaced from each other, and an optical signal transmission area and an optical signal reception. A base having a fiber end holding region between the base, a semiconductor laser element fixed to the optical signal transmission region of the base, and emitting a transmission optical signal; An optical axis direction positioning means provided for restricting a position in the optical axis direction of one end of the optical fiber on which a transmission optical signal emitted from the semiconductor laser element is incident; and a fiber end holding area of the base. It is provided in,
Fiber end holding means for holding one end of the optical fiber in a state where the position of one end of the optical fiber in a plane perpendicular to the optical axis is provided, and provided in an optical signal receiving area of the base. A fiber main body holding unit that holds the main body of the optical fiber; and a fiber main body holding unit that is held so as to be inserted into the optical fiber and that is transmitted from the semiconductor laser device. A reflection filter that transmits a trust light signal and reflects a reception light signal incident from the other end of the optical fiber; fixed to an optical signal reception area of the base and reflected by the reflection filter; An optical transmitting and receiving apparatus comprising: a receiving light receiving element that receives a received optical signal. 14. The fiber end holding means is formed on the base so as to extend in the optical axis direction, has a pair of wall surfaces approaching each other from the opening side to the bottom side, and holds the optical fiber. And a pressing member fixed above the concave groove in the fiber end holding region of the base and pressing one end of the optical fiber held in the concave groove against the pair of wall surfaces, and 14. The optical transmitting and receiving device according to claim 13, comprising: 15. A method of manufacturing an optical transmitting and receiving apparatus comprising an optical fiber for transmitting an optical signal for optical transmission and receiving an optical signal for reception, comprising: an optical signal transmitting area and an optical signal receiving area spaced apart from each other. And a cross-sectional shape capable of holding one end of the optical fiber in a fiber end holding area of the first base having a fiber end holding area between the optical signal transmitting area and the optical signal receiving area. Forming a concave groove for holding an optical fiber end portion extending in the optical axis direction, and fixing a semiconductor laser element for emitting a transmission optical signal to the optical signal transmission region of the first base. An element fixing step, and after forming an optical fiber main body holding concave groove having a cross-sectional shape capable of holding the main body of the optical fiber and extending in the optical axis direction in the second base, For holding A fiber main body fixing step of fixing the main body of the optical fiber inside the concave groove, and after forming a cut groove extending in a direction perpendicular to the optical axis in the second base and the main body of the optical fiber, Inside the cut groove, a transmitting optical signal emitted from the semiconductor laser device and incident on one end of the optical fiber is transmitted, and a receiving optical signal incident from the other end of the optical fiber is reflected. A filter fixing step of fixing a reflection type filter, and a reception light receiving element for receiving a reception optical signal reflected by the reflection type filter above the optical fiber body holding groove in the second base. A light receiving element fixing step of fixing, and fixing one end of the optical fiber to the concave groove for holding the end of the optical fiber of the first base, and a main body of the optical fiber Fixing the second base, to which the reflection type filter and the receiving light receiving element are fixed, to the optical signal receiving area of the first base. . 16. The method according to claim 16, wherein the second base is fixed to the first base in a state where a position of one end of the optical fiber in an optical axis direction and a position in a plane perpendicular to the optical axis are regulated. The method for manufacturing an optical transmitting / receiving device according to claim 15, further comprising a step of fixing the optical transmitting / receiving device to the optical signal receiving area. 17. The concave groove for extending the optical fiber end portion in the fiber end retaining region of the first base in a direction intersecting with the optical fiber end retaining concave groove. Forming a resin introduction groove communicating with the first base base, wherein the base fixing step includes: attaching one end of the optical fiber to the optical fiber end holding concave groove of the first base; 16. The method according to claim 15, further comprising the step of fixing the optical fiber end holding groove with a resin supplied thereto. 18. A base having a concave groove extending in the optical axis direction and a cut groove extending in a direction perpendicular to the optical axis, a semiconductor laser element fixed to the base and emitting semiconductor laser light, An optical fiber that is housed in the concave groove of the base while being in contact with a wall surface of the cut groove on the semiconductor laser side, and that transmits laser light emitted from the semiconductor laser element; and An optical semiconductor, comprising: an alignment mark for aligning the semiconductor laser element and the base; wherein the alignment mark is formed by the same photolithography and the same etching as the concave groove. module. 19. The alignment mark includes a pair of lateral alignment marks formed at positions symmetrical with respect to an optical axis on both sides of a region of the base where the semiconductor laser element is fixed. An optical semiconductor module according to claim 18. 20. The optical semiconductor module according to claim 18, wherein said alignment mark includes a base edge alignment mark formed on an edge portion of said base with said semiconductor laser side wall surface of said cut groove. . 21. A pair of side alignment marks formed at positions symmetrical with respect to an optical axis on both sides of a region of the base where the semiconductor laser element is fixed, and the notch in the base. 19. The optical semiconductor module according to claim 18, further comprising a base edge alignment mark formed at an edge of the groove with a wall surface on the semiconductor laser side. 22. The semiconductor laser device, further comprising a laser edge alignment mark formed at an edge portion on the optical fiber side on a bottom surface of the semiconductor laser device for aligning the semiconductor laser device with the base. The optical semiconductor module according to claim 18, wherein 23. The optical semiconductor module according to claim 22, wherein the alignment mark includes a base edge alignment mark formed on an edge portion of the base with a wall surface of the cut groove on the semiconductor laser side. . 24. A base having a concave groove extending in the direction of the optical axis, a semiconductor laser element having a double channel structure fixed to the base and emitting semiconductor laser light, housed in the concave groove of the base, An optical fiber for transmitting a laser beam emitted from the semiconductor laser element; and an alignment mark formed on the base for aligning the semiconductor laser element with the base. A convex alignment mark formed of a convex portion existing between a pair of grooves having a V-shaped cross section formed at positions symmetrical with respect to an optical axis in a region where the semiconductor laser element of the base is fixed. An optical semiconductor module, comprising: 25. The optical semiconductor module according to claim 24, wherein the pair of grooves are formed by the same photolithography and the same etching as the concave grooves.