JPH1114800A - X-ray reflector and x-ray reflection optical system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To produce X-ray beam whose intensity distribution is constant. SOLUTION: The X-ray 2 radiated from a light source 1 is reflected by a reflector 3 and projected on an exposure surface 5. The reflector 3 is constituted of SiC and Pt film 4 is formed on the surface. In X-ray intensity distribution on the exposure surface 5, an uneven condition exists that the intensity of an area 15a which the X-ray from a reflection point 13a reaches is high and an area 15a which the X-ray from a reflection point 13b reaches is low. Elimination of the uneven condition in such a case requires lowering the reflectance of the reflection point 13a. Lowering the reflectance is conducted by masking the section of the reflection point 13a for exposure of SiC at the time of forming the Pt film 4 on the surface of the reflector 3.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an X-ray lithography utilizing synchrotron radiation (SR) or the like, which collects or expands X-rays radiated from a light source to efficiently provide an exposure apparatus. The present invention relates to an X-ray reflecting mirror and an X-ray reflecting optical system used for projecting.

[0002]

2. Description of the Related Art X-ray lithography uses an X-ray to form a fine pattern of a super LSI, and transfers a fine pattern of 0.1 μm or less smaller than the wavelength of visible light due to its short wavelength. It is a technology that can be done. In X-ray lithography, an X-ray source that generates X-rays, an X-ray exposure apparatus that transfers a fine pattern using X-rays, and X-rays emitted from the X-ray source are introduced into the X-ray exposure apparatus. An X-ray optical system is required. However, at present, there is no X-ray source having a high directivity such as a laser, so that only an X-ray source diverging from the source exists. Therefore, in order to irradiate an X-ray exposure apparatus with a powerful X-ray beam, an X-ray optical system for converging divergent X-rays is indispensable. X-ray reflectors are used in such optical systems.

In a conventional X-ray reflecting optical system, an X-ray reflecting mirror for condensing X-rays is described by a polynomial such as a spherical surface, a paraboloid of revolution, a spheroidal surface, or a toroidal surface combining spherical surfaces having different curvatures. A reflecting mirror having the following shape is used. Further, in order to efficiently collect X-rays in a specific exposure area, an X-ray combining several reflectors having these shapes is used.
Line optics have also been used. Electromagnetic waves are reflected with high reflectance if the surface of the material is smooth. In order to reflect X-rays having a short wavelength among electromagnetic waves, the smoothness of the surface needs to have asperities as small as the size of atoms. Furthermore, in order to reflect X-rays, it is necessary to use the total reflection phenomenon that occurs when the angle between the reflecting surface and the incident X-rays is set to a low angle of 1 degree or 2 degrees or less. Since the incident angle is small, it is important to improve not only the unevenness of the surface but also the flatness. At present, an X-ray reflector having a high flatness and a very smooth surface is being developed by using a material which does not deform due to high rigidity and does not deform due to heat because of high thermal conductivity.

Recently, attempts have been made in the semiconductor industry to use X-ray lithography in an ultra-large scale integrated circuit manufacturing process, and in order to be industrially feasible, an improvement in exposure efficiency is essential. The exposure efficiency is higher as the intensity of X-rays at the time of exposure is higher and the exposure area per exposure is larger. Furthermore, to maintain the quality of the exposure in the area to be exposed,
The X-ray intensity in the region must be constant. Therefore, in order to improve the exposure efficiency, it is indispensable to form an X-ray beam having high intensity over a large area and high intensity uniformity.

[0005]

In order to improve the exposure efficiency in X-ray lithography, it is essential to form an X-ray beam having high intensity and high intensity uniformity. In order to increase the intensity, an optical system having a large aperture capable of capturing as much divergent X-rays as possible is required. On the other hand, the intensity uniformity tends to be low when the system takes in as much X-rays as possible. This corresponds to confining the X-rays in which the operation of condensing spreads to a certain area, and the density of the X-ray beam is generated in the condensing area because it is forcibly packed. The uniformity of X-ray intensity required by X-ray lithography is 4% or less, and cannot be achieved even with slight beam density. As described above, the conventional X-ray reflection optical system has a problem that X-ray irradiation with high intensity and high uniformity cannot be performed. The present invention relates to an X-ray reflecting mirror and an X-ray reflecting optical system for producing an X-ray beam having a constant X-ray intensity distribution in a focused region, which is necessary for using X-ray lithography in the semiconductor industry. The purpose is to provide.

[0006]

According to the present invention, there is provided an X-ray reflector for converging an X-ray radiated from an X-ray source to a predetermined area by reflection on a reflection surface. ,
The reflection surface has a region having a high X-ray reflectivity and a region having a low X-ray reflectivity. In an X-ray reflection optical system that condenses X-rays emitted from an X-ray source with a reflecting mirror, the X-rays are reflected on the surface of the reflecting mirror at a reflectance corresponding to an incident angle. The reflectivity is expressed by the Fresnel equation, and is influenced by the type of the material constituting the reflecting surface and the roughness corresponding to the unevenness of the reflecting surface. Therefore, X
Since the X-rays from this area are attenuated by reducing the reflectivity of the surface area of the reflecting mirror that reflects the X-rays reaching the area where the rays are too strong, the intensity distribution of the X-rays in the light-collecting area Can be kept constant.

Further, as described in the second aspect, the region having a high X-ray reflectivity is a region where a substance having a high X-ray reflectivity is formed, and a region having a low X-ray reflectivity. Is X
This is a region where a substance having a low line reflectance is formed. Also,
As described in claim 3, the region where the X-ray reflectance is high is a region where the surface roughness is small, and the region where the X-ray reflectance is low is a region where the surface roughness is large. According to a fourth aspect of the present invention, there is provided an X-ray reflection optical system for projecting an X-ray radiated from an X-ray source onto an exposure surface by reflection.
X that reflects X-rays emitted from the source and focuses it on the exposed surface
X-ray reflecting mirror and X arranged on the exposure surface and irradiated on the exposure surface
A position intensity detecting means for detecting a line intensity distribution, and irradiating the reflection region to reduce the X-ray reflectivity of the reflection region of the X-ray reflecting mirror corresponding to the position where the X-ray intensity is high on the exposure surface For generating ions or neutral particles.

[0008]

BEST MODE FOR CARRYING OUT THE INVENTION

1. Embodiment 1. Next, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a block diagram of an X-ray reflection optical system according to a first embodiment of the present invention. The X-ray 2 diverging from the light source 1 is reflected at each of the reflection points 13 a and 13 b on the surface of the X-ray reflector 3,
a, 15b. The reflecting mirror 3 is made of silicon carbide (SiC
), And a Pt film 4 is formed on the surface thereof.

In such an X-ray reflecting optical system, the position of the light source 1, the position of the reflecting mirror 3, the position of the exposure surface 5, the position of the reflecting mirror 3,
And the incident angle at which the X-rays 2 enter the reflecting mirror 3 are determined, the density distribution of the X-rays applied to the exposure surface 5 is uniquely determined. In general, the X-ray intensity distribution is not constant due to the difference in reflectivity and the density distribution due to the distribution of reflection points, and a strong portion and a weak portion have an intensity of 10% or more.

Now, in the X-ray intensity distribution on the exposure surface 5,
The area 15a where the X-rays from the reflection point 13a reach is large, and the area 15b where the X-rays from the reflection point 13b reach
It is assumed that there is a non-uniformity of the X-ray intensity that the intensity of X-ray is small. In order to eliminate such non-uniformity, the reflectance at the reflection point 13a of the reflecting mirror 3 corresponding to the region 15a where X-rays are strong may be reduced. Thereby, the X-ray intensity distribution on the exposure surface 5 can be made constant.

Next, a method for locally reducing the reflectance of the X-ray reflecting mirror 3 will be described. The X-rays 2 emitted from the light source 1 are reflected on the surface of the reflecting mirror 3 at a reflectance corresponding to the incident angle. The reflectivity is expressed by the Fresnel equation, and is affected by the type of the material constituting the reflecting surface and the unevenness of the reflecting surface. For example, the material constituting the reflection surface is Pt, A
In the case of heavy metals such as u, W, Ta, U, Pd, and Ru, the reflectivity is high, and in the case of light substances such as C, Si, and Al, the reflectivity is low.

FIG. 2 and FIG. 3 show the relationship between the incident angle of X-rays and the reflectance when the material constituting the reflecting surface is Pt and SiC. X-rays having a wavelength of 0.6 to 0.9 nm used in X-ray lithography were used as X-rays for irradiating the reflecting surface. 2A shows a case where the wavelength of the X-ray is 0.6 nm, FIG. 2B shows a case where the wavelength is 0.7 nm, FIG. 3A shows a case where the wavelength is 0.8 nm, and FIG. Is the case where the wavelength is 0.9 nm.

When the incident angle of X-rays on Pt or SiC is 1.5 degrees or more, Pt shows a high reflectance, whereas SiC hardly reflects X-rays. Therefore, a region composed of a heavy metal such as Pt and S
When there is a region composed of a light element such as iC, the intensity of the reflected X-ray is different.

From the above, in order to lower the reflectance of the reflecting point 13a of the reflecting mirror 3 corresponding to the region 15a where X-rays are strong, it is necessary to expose SiC at the position of the reflecting point 13a. As a result, the reflectivity decreases and the X-rays are hardly reflected, so that the X-ray intensity at the position of the region 15a decreases.

Next, the X-ray intensity distribution on the exposure surface 5 is actually calculated, and it is examined which region on the reflection surface should be changed in the X-ray reflectivity. Here, the spatial coordinates x, y, z are shown in FIG.
Shall be taken as follows. That is, from the light source 1 to the exposure surface 5
Is the y-axis direction, the upward vertical direction perpendicular thereto is the z-axis direction, and is perpendicular to y and z, and when the y-axis is rotated clockwise toward the z-axis, The direction in which the screw advances is x
In the axial direction.

The light source 1 is a synchrotron radiation (Synchrot)
ron Radiation (hereinafter abbreviated as SR)
As a light source, the spread of this SR light source is standard deviation 0.8 mm
Was assumed to be a normal distribution with a variance of The distance between the light source 1 and the center of the reflecting mirror 3 is 2760 mm,
The distance between the center of the lens and the exposure surface 5 is 6340 mm. The reflecting mirror 3 has a shape that can be expressed by the following equation.

[0017] ^{z = 9.22079702752712 × 10 -6 + 0.004270800575741973x} 2 + 8.28115405993602 × 10 -8 x 4 + 5.014815819129886 × 10 -12 x 6 -7.389003736146092 × 10 -6 y -6.175952366769869 × 10 - ^{7 x 2 y -5.244035396540827 × 10 -11} x 4 y + 3.532448535214485 × 10 -6 y 2 + 2.703327315869953 × 10 -10 x 2 y 2 -4.432466606511452 × 10 -10 y 3 + 1.083541174146448 × 10 ^-13 y ⁴ ... (1)

Equation (1) includes terms of the third or higher order of x, y, and z, which indicates that the reflecting mirror 3 is a non-planar mirror having a complicated shape. Then, the X-ray 2 is applied to the center (x =
(y = z = 0), the incident angle is 1.58 degrees. In the X-ray reflection optical system as described above, assuming that 20,000 SRs are generated from the light source 1, the intensity distribution formed by the SRs on the exposure surface 5 is calculated.

FIG. 4 shows the shape of the SR light source, and FIG. 5 shows the intersection of the SR radiated from the SR light source 1 and the reflecting surface of the reflecting mirror 3. Then, the SR reflected by the reflecting mirror 3
The overall shape of the intersection group formed on the exposure surface 5 is linear as shown in FIG. Subsequently, when the density of X-rays on the exposure surface 5 is calculated, a contour distribution as shown in FIG. 7A is obtained.
FIG. 7B shows the result of integrating this distribution in the z-axis direction.
This corresponds to the X-ray intensity distribution. When obtaining the intensity, the X-ray spectrum between wavelengths of 0.5 to 1.5 nm was integrated.

From FIG. 7B, it can be seen that the intensity distribution of this optical system is strong in the shaded area, and that the X-ray intensity is not constant in the exposure area. Note that the points vary because the density of light rays generated from the light source 1 varies, and by increasing the number of light rays, the variation is reduced.

Next, it will be examined which region is changed in X-ray reflectivity to make the X-ray intensity on the exposure surface 5 uniform.
First, the reflecting surface of the reflecting mirror 3 is divided into 13 regions parallel to the x-axis as shown in FIG. Each area is called a class. FIGS. 9 to 20 show the contour distribution of dense and dense contours formed on the exposure surface 5 by X-rays reflected from each area on the reflecting mirror 3 and the X-ray intensity distribution obtained by integrating the contour distribution in the z-axis direction.
Shown in

It should be noted that X reflected from classes 31 and 43
Since the line is so weak that it can be ignored, only the sparse / dense distribution is shown in FIG. 9 for class 31 and class 43 is not shown. As can be seen from FIGS. 9 to 13, the X-rays reflected from the classes 31 to 35 of the reflecting mirror 3 reach the central part (near x = 0) of the exposure surface 5 and form a distribution. on the other hand,
As can be seen from FIGS. 14 to 20, the X-rays reflected from the classes 36 to 43 are emitted from the periphery (x = 10, −
10) and form a distribution.

Of the X-ray intensity distribution due to reflection from each class, the intensity distribution of X-rays reflected from class 39 (FIG. 1)
7 (b)), the ratio where the peripheral portion is stronger than the central portion substantially corresponds to the ratio where the peripheral portion is stronger relative to the central portion in the entire X-ray intensity distribution of FIG. 7 (b). You can see that it is doing. Therefore, if the structure is such that the Pt film 4 is not formed on the surface of the class 39 of the reflecting mirror 3 and the SiC is exposed, as shown in FIG. 21, the class 39 hardly reflects X-rays.

Thus, the entire X-ray intensity distribution is shown in FIG.
As shown in FIG. 2, it can be seen that the peripheral portion becomes lower and a certain strength is obtained. In order to expose SiC on the surface of the reflecting mirror 3, it is only necessary to mask a portion corresponding to the class 39 when forming the Pt film 4 on the surface of the reflecting mirror 3.

As described above, according to the present embodiment, the X-rays on the exposure surface 5 can be masked only by masking the class of the reflection mirror 3 corresponding to the position where the X-ray intensity is high on the exposure surface 5 when manufacturing the reflection mirror.
The reflecting mirror 3 having a constant line intensity can be realized.

Embodiment 2 In the first embodiment, as a method of reducing the reflectivity of class 39 of the reflecting mirror 3, a method of exposing SiC, which is a material of the reflecting mirror 3, is employed. In the present embodiment, the Pt film 4 is formed thick. By doing so, a decrease in reflectance is realized.

As described above, the reflectance is affected by the roughness corresponding to the unevenness of the surface of the material constituting the reflection surface. FIG. 23 shows a case where the reflectance is attenuated in such a manner that the surface roughness σ is described by the following equation.

[0028]

(Equation 1)

The wavelength λ of the X-ray was 0.7 nm, and the incident angle θ at which the X-ray was incident on the reflecting surface was 1.58 degrees. It can be seen that even if the surface is entirely covered with Pt, there is a large difference in reflectance between the case where the surface roughness σ is 0 in rms roughness and the case where the surface roughness is 2 nm or more. When the surface roughness σ exceeds 3 nm, X-rays are hardly reflected. Therefore, in the present embodiment, the reflectance of the reflecting mirror 3 is locally changed by forming the Pt film 4 thick.

FIG. 24 shows the change in the surface roughness of the Pt film with respect to the film thickness. The Pt film was formed by a vacuum evaporation method. For use as a reflective film, the thickness of the Pt film is 7 to 10 nm.
It is necessary to consider the film thickness distribution during film formation.
Pt is formed with a thickness of 0 to 20 nm. The surface roughness for a film thickness of 10 nm is about 0.9 nm. And
The reflectance at this time is about 80% (0.8) according to FIG.

On the other hand, Pt is applied to the surface of the class 39 of the reflecting mirror 3.
If the film 4 is formed to have a thickness of 70 nm or more, the surface roughness is reduced to about 2 nm, and the reflectance is reduced to about 40% according to FIG. Thus, the reflecting mirror 3 having a constant X-ray intensity on the exposure surface 5 can be realized. Further, by further increasing the thickness of the Pt film 4, the surface roughness can be increased.

Embodiment 3 FIG. 25 is a block diagram of an X-ray reflection optical system according to a third embodiment of the present invention.
The same components as those in FIG. 1 are denoted by the same reference numerals. In the first embodiment, a method in which the Pt film 4 is not formed is used as a method of lowering the reflectivity of the class 39. In the present embodiment, however, the ions 12 such as inactive He, Ne, Ar, and Xe are used. Is applied to the surface of the Pt film 4 to utilize the phenomenon that the surface is roughened by the sputtering effect and the reflectance is reduced.

In general, when a substance is irradiated with particles having high energy, a sputtering phenomenon occurs, and atoms on the surface are knocked out, causing irregularities on the surface of the substance. By deteriorating the surface roughness of class 39 by such sputtering, the reflectivity of class 39 is reduced, so that a uniform X-ray intensity distribution on exposure surface 5 can be obtained.

Embodiment 4 In the present embodiment, as a method of lowering the reflectance of class 39, the method of Embodiment 3
Instead of irradiating ions having a high energy as described above, ions of a light element having a low energy, for example, Si
By irradiating C, Si, Al or the like, a film composed of these light elements is formed. Since the energy is low, a sputtering phenomenon does not occur and a film can be formed.

When X-rays are obliquely incident on a substance, they hardly penetrate the substance, so that a very thin reflective film is sufficient. For example, when X-rays are incident on Pt at an incident angle of 1.58 degrees,
FIG. 26 shows the reflectance of the Pt film when the light is incident on the film. P
In the case of the t film, it is understood that the light is sufficiently reflected at 10 nm. The same is true for light elements. Therefore, the reflecting mirror 3
For example, if only 50 nm of SiC is formed on the surface of class 39, the reflectivity of class 39 will be that of SiC. Thereby, a uniform X-ray intensity distribution on the exposure surface 5 can be obtained.

Embodiment 5 FIG. 27 is a block diagram of an X-ray reflection optical system according to a fifth embodiment of the present invention.
The same components as those in FIG. 1 are denoted by the same reference numerals. In the present embodiment, an X-ray reflection optical system for X-ray lithography is actually installed in a vacuum, and ions or neutral particles are generated in a vacuum vessel (not shown) in which the reflection mirror 3 is housed. The apparatus 6 is installed, and ions or neutral particles 12 of metals and light elements are installed.
Is irradiated on the reflecting surface of the reflecting mirror 3.

At this time, the X-ray intensity on the exposure surface 5 is detected by a position intensity detection monitor 7 provided on the exposure surface 5, and the position of the reflecting mirror 3 corresponding to the position on the exposure surface 5 where the X-ray intensity is strong is detected. A class (class 39 in the first to fourth embodiments) is irradiated with ions or neutral particles 12 to attenuate the X-ray reflectivity of this class.

As a method of attenuating the reflectivity by the ions or neutral particles 12 irradiated from the generator 6, a material (for example, P
The thickness of t) may be increased, sputtering may be performed as in the third embodiment, or a material having a low reflectance may be formed as in the fourth embodiment.

As described with reference to FIGS. 7 and 9 to 20, the relationship between the X-ray intensity distribution and the reflection point on the reflecting mirror 3 is calculated in advance, and the actual X-ray intensity distribution is calculated. By lowering the reflectivity of the class of the reflecting mirror 3 corresponding to the position where the X-ray intensity is high while detecting with the intensity detection monitor 7, more accurate correction can be performed.

In the above embodiment, a non-planar mirror whose shape is described by equation (1) is used as the X-ray reflecting mirror 3, but the present invention is not limited to this. Is also good.

[0041]

According to the present invention, as described in the first aspect, the region where the reflectivity of the X-ray is high and the X-ray reflectivity are located on the reflection surface of the X-ray reflector.
By providing a region having a low line reflectivity, it is possible to avoid a phenomenon in which the intensity distribution of the X-ray optical system, which was inevitable in the past, becomes nonuniform, and the intensity distribution required for X-ray lithography is constant. An X-ray beam can be provided. As a result, an optical system required for X-ray lithography can be provided, so that ultra-fine patterns of the order of 0.1 μm can be mass-produced, and high-speed ultra-low-power LSI mass production can be realized. Further, it can be used as an illumination system for various X-ray optical systems, for example, an X-ray reduction optical system, an X-ray microscope, and the like.

Further, as described in claim 2, a region having a high X-ray reflectivity is defined as a region where a substance having a high X-ray reflectivity is formed, and a region having a low X-ray reflectivity is defined as an X-ray reflectivity. An area where a substance having a low reflectance is formed, and an area of the X-ray reflecting mirror corresponding to a position where the X-ray intensity is high in the exposure area is an area where the X-ray reflectance is low, so that an X-ray The strength can be made uniform. In addition, a region where a substance having a low X-ray reflectivity, which is a region having a low X-ray reflectivity, is easily realized, for example, by forming a reflective film by masking a corresponding portion when manufacturing a reflecting mirror. Can be.

As described in claim 3, an area having a high X-ray reflectivity is defined as an area having a small surface roughness, and an area having a low X-ray reflectivity is defined as an area having a large surface roughness. By setting the region of the X-ray reflecting mirror corresponding to the position where the X-ray intensity is high within the region to the region where the X-ray reflectivity is low, the X-ray intensity can be made uniform within the exposure region. Further, a region having a large surface roughness, which is a region having a low X-ray reflectivity, can be easily realized by, for example, irradiating ions or forming a film made of a light element on the relevant portion after manufacturing the reflector. Can be.

Further, by providing the X-ray reflecting mirror, the position intensity detecting means and the generator, the X-ray intensity distribution on the exposed surface can be detected by the position intensity detecting means while the X-ray reflecting mirror is provided. The X-ray reflectivity of the reflection region of the X-ray reflecting mirror corresponding to the position where the X-ray intensity is high can be reduced by irradiation of ions or neutral particles, and more accurate correction can be performed.

[Brief description of the drawings]

FIG. 1 is a block diagram of an X-ray reflection optical system according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a relationship between an incident angle of X-rays and a reflectance.

FIG. 3 is a diagram showing a relationship between an incident angle of X-rays and a reflectance.

FIG. 4 is a diagram showing a shape of an SR light source.

FIG. 5 is a diagram showing an intersection between an X-ray emitted from a light source and a reflecting mirror.

FIG. 6 is a diagram illustrating an intersection between an X-ray and an exposure surface.

FIG. 7 shows the density distribution of X-rays on the exposure surface and the density distribution of z-rays.
It is a figure which shows the X-ray intensity distribution integrated in the axial direction.

FIG. 8 is a diagram showing an example in which the surface of a reflecting mirror is divided into 13 regions.

FIG. 9 is a diagram showing a density distribution on an exposure surface of an X-ray reflected from a class 31 of a reflecting mirror;

FIG. 10 is a diagram showing a coarse / dense distribution on an exposure surface of an X-ray reflected from a reflecting mirror class 32 and an X-ray intensity distribution obtained by integrating the coarse / dense distribution in the z-axis direction.

FIG. 11 is a diagram showing a coarse / dense distribution on an exposure surface of an X-ray reflected from a reflecting mirror class 33 and an X-ray intensity distribution obtained by integrating the coarse / dense distribution in the z-axis direction.

FIG. 12 is a diagram showing a coarse / dense distribution on an exposure surface of an X-ray reflected from a reflector class 34 and an X-ray intensity distribution obtained by integrating the dense / dense distribution in the z-axis direction.

FIG. 13 is a diagram showing a dense / dense distribution on an exposure surface of an X-ray reflected from a reflecting mirror class 35 and an X-ray intensity distribution obtained by integrating the dense / dense distribution in the z-axis direction.

FIG. 14 is a diagram showing a coarse / dense distribution on an exposure surface of an X-ray reflected from a reflecting mirror class 36 and an X-ray intensity distribution obtained by integrating the dense / dense distribution in the z-axis direction.

FIG. 15 is a diagram showing a density distribution on an exposure surface of an X-ray reflected from a class 37 of a reflecting mirror and an X-ray intensity distribution obtained by integrating the density distribution in the z-axis direction.

FIG. 16 is a diagram showing a dense / dense distribution on an exposure surface of an X-ray reflected from a reflecting mirror class 38 and an X-ray intensity distribution obtained by integrating the dense / dense distribution in the z-axis direction.

FIG. 17 is a diagram showing a coarse / dense distribution on an exposure surface of an X-ray reflected from a reflecting mirror class 39 and an X-ray intensity distribution obtained by integrating the coarse / dense distribution in the z-axis direction.

FIG. 18 is a diagram illustrating a coarse / dense distribution on an exposure surface of an X-ray reflected from a reflecting mirror class 40 and an X-ray intensity distribution obtained by integrating the coarse / dense distribution in the z-axis direction.

FIG. 19 is a diagram showing a dense / dense distribution on an exposure surface of an X-ray reflected from a reflector class 41 and an X-ray intensity distribution obtained by integrating the dense / dense distribution in the z-axis direction.

FIG. 20 is a diagram showing a density distribution on an exposure surface of an X-ray reflected from a class 42 of a reflecting mirror and an X-ray intensity distribution obtained by integrating the density distribution in the z-axis direction.

FIG. 21 is a diagram showing an intersection between an X-ray and a reflecting mirror when SiC is exposed to the reflecting mirror class 39.

FIG. 22 is a diagram showing an X-ray intensity distribution of the entire exposed surface when SiC is exposed to a reflecting mirror class 39.

FIG. 23 is a diagram showing the relationship between the surface roughness of the reflecting surface and the reflectivity of X-rays with respect to X-rays having an incident angle of 1.58 degrees and a wavelength of 0.7 nm.

FIG. 24 is a diagram showing the relationship between the thickness of the Pt film and the surface roughness of the Pt film.

FIG. 25 is a block diagram of an X-ray reflection optical system according to a third embodiment of the present invention.

FIG. 26 is a diagram showing the relationship between the thickness of a Pt film and the reflectivity of X-rays.

FIG. 27 is a block diagram of an X-ray reflection optical system according to a fifth embodiment of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Light source, 2 ... X-ray, 3 ... X-ray reflecting mirror, 4 ... Pt film, 5
... exposure surface, 6 ... generator, 7 ... position intensity detection monitor.

Claims (4)

[Claims] 1. An X-ray reflector for converging X-rays radiated from an X-ray source onto a predetermined area by reflection on a reflection surface, wherein the reflection surface comprises a region having a high X-ray reflectivity and an X-ray. An X-ray reflector having a low reflectance region. 2. The X-ray reflector according to claim 1, wherein the region having a high X-ray reflectance is a region where a substance having a high X-ray reflectance is formed, and the X-ray reflectance is high. An X-ray reflecting mirror, wherein the low region is a region where a substance having low X-ray reflectance is formed. 3. The X-ray mirror according to claim 1, wherein the region having a high X-ray reflectivity is a region having a small surface roughness, and the region having a low X-ray reflectivity is a surface roughness. An X-ray reflecting mirror, characterized in that the area is large. 4. An X-ray reflection optical system for projecting an X-ray radiated from an X-ray source onto an exposure surface by reflection, wherein the X-ray reflects the X-ray radiated from the X-ray source and condenses the light on the exposure surface. A reflecting mirror, a position intensity detecting means disposed on the exposure surface and detecting an intensity distribution of X-rays applied to the exposure surface, and an X-ray reflecting mirror corresponding to a position on the exposure surface where the X-ray intensity is strong. An X-ray reflection optical system, comprising: a generator for generating ions or neutral particles for irradiating the reflection region to reduce the X-ray reflectivity of the reflection region.