JPH11145403A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPH11145403A
JPH11145403A JP9317607A JP31760797A JPH11145403A JP H11145403 A JPH11145403 A JP H11145403A JP 9317607 A JP9317607 A JP 9317607A JP 31760797 A JP31760797 A JP 31760797A JP H11145403 A JPH11145403 A JP H11145403A
Authority
JP
Japan
Prior art keywords
chip
block
integrated circuit
function
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9317607A
Other languages
Japanese (ja)
Inventor
Tamotsu Kobayashi
保 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Engineering Ltd
Original Assignee
NEC Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Engineering Ltd filed Critical NEC Engineering Ltd
Priority to JP9317607A priority Critical patent/JPH11145403A/en
Publication of JPH11145403A publication Critical patent/JPH11145403A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16135Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain a non-defective one chip by a method, wherein a circuit in a chip is divided into a plurality of circuits for blocks, signal terminals of adjacent blocks are connected electrically on a semiconductor wafer, each block is detachably arranged, and the one chip is made capable of being constituted at an arbitrary place. SOLUTION: A circuit in a one chip is divided into two consisting of a function A block and a function B block. Signal terminals 2-1 to 2-6 are connected to pads 1-1 to 1-6 respectively, and the pads 1-1 to 1-6 are connected to pads 1-1' to 1-6', respectively. When the function A block malfunctions in a chip X, the function B block of the chip X and the function A block of another chip, which is located on the right side of the function B block, are used as a new chip Y. The content and the pad arrangement of the functional blocks of the chip Y and the chip X are all identical. Accordingly, a non-defective one chip can be obtained.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、情報処理装置など
に使用される大規模半導体集積回路として好適な集積回
路であって、さらに詳しくは改良された生産歩留まり向
上手段を備えた半導体集積回路に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an integrated circuit suitable as a large-scale semiconductor integrated circuit used for an information processing device and the like, and more particularly to a semiconductor integrated circuit having improved production yield improving means. .

【0002】[0002]

【従来の技術】従来のこの種の半導体集積回路を開示し
ている文献として、特開平5−136331号公報があ
る。この公報に示されている半導体集積回路は、図2お
よび図3に示す如く構成されている。
2. Description of the Related Art Japanese Unexamined Patent Publication No. Hei 5-136331 discloses a conventional semiconductor integrated circuit of this type. The semiconductor integrated circuit disclosed in this publication is configured as shown in FIGS.

【0003】図2は半導体チップの一部を取り出して示
す部分断面図であり、図3の(a)(b)は図2に示す
構造の半導体チップの概略的な平面図である。図2およ
び図3において、3および8はチップ、4,9,17は
パッド、5および10は絶縁保護膜、6は超音波接着箇
所、11はメタル線切断部分、12はバンプ接続箇所で
ある。また13〜16は機能ブロック、18及び19は
メタル線である。
FIG. 2 is a partial cross-sectional view showing a part of the semiconductor chip, and FIGS. 3A and 3B are schematic plan views of the semiconductor chip having the structure shown in FIG. 2 and 3, 3 and 8 are chips, 4, 9, and 17 are pads, 5 and 10 are insulating protective films, 6 is an ultrasonic bonding portion, 11 is a metal wire cutting portion, and 12 is a bump connection portion. . 13 to 16 are functional blocks, and 18 and 19 are metal wires.

【0004】図2および図3に示すように、この半導体
集積回路は、複数の機能ブロック13〜16を主体とし
て構成されており、半導体チップの周辺部には、各機能
ブロックの全ての入出力信号をチップ外と送受信させ得
る如く、チップ外部と電気的な接続をはかるためのパッ
ド17が設けられている。
As shown in FIGS. 2 and 3, this semiconductor integrated circuit is mainly composed of a plurality of functional blocks 13 to 16, and all input / outputs of each functional block are provided around a semiconductor chip. A pad 17 for electrically connecting to the outside of the chip is provided so that signals can be transmitted and received to and from the outside of the chip.

【0005】この半導体集積回路は、半導体チップの試
験段階で、ある機能ブロックに不良が発見された場合、
次の如く処置される。すなわち、その不良機能ブロック
と鏡面対称となっている図3の(b)に示すような機能
ブロックの単体チップ8(良品)を用意する。そして不
良機能ブロックについてはパッド群の内側で電気的に切
断すると共に、当該機能ブロックの鏡面対称性を利用し
て、機能ブロック単体チップ8のパッド面と不良機能ブ
ロックのパッド面とを重ね合わせて電気的に接続する。
In this semiconductor integrated circuit, when a defect is found in a certain functional block in a test stage of a semiconductor chip,
The treatment is as follows. That is, a single chip 8 (non-defective product) of a functional block as shown in FIG. 3B, which is mirror-symmetric with the defective functional block, is prepared. The defective functional block is electrically cut inside the pad group, and the pad surface of the functional block unit chip 8 and the pad surface of the defective functional block are overlapped by utilizing the mirror symmetry of the functional block. Make an electrical connection.

【0006】かくしてこの半導体集積回路においては、
不良機能ブロックが、新たに接続した良品機能ブロック
単体チップによって補完されるため、生産歩留まりが向
上する。
Thus, in this semiconductor integrated circuit,
Since the defective functional block is complemented by the newly connected non-defective functional block unit chip, the production yield is improved.

【0007】[0007]

【発明が解決しようとする課題】上記従来の半導体集積
回路には、次のような欠点がある。 (a)鏡面対称の機能ブロック単体チップが必要であ
る。 (b)半導体チップ内の不良機能ブロックを、電気的に
切断する工程が必要である。 (c)良品の鏡面対称の機能ブロック単体チップを電気
的に接続する工程が必要である。
The above-mentioned conventional semiconductor integrated circuit has the following disadvantages. (A) A mirror-symmetric functional block unit chip is required. (B) A step of electrically cutting defective functional blocks in the semiconductor chip is required. (C) A step of electrically connecting non-defective mirror-symmetric functional block unit chips is required.

【0008】本発明の目的は、1チップ構成の場合に比
べて生産歩留りを著しく向上できる上、鏡面対称の機能
ブロック単体チップを格別に用意する必要がなく、しか
も煩雑な操作を行なうことなく良品化をはかることので
きる半導体集積回路を提供することにある。
An object of the present invention is to significantly improve the production yield as compared with the case of a one-chip configuration, and eliminate the need for specially preparing a mirror-symmetrical functional block unit chip, and perform a good product without performing complicated operations. It is an object of the present invention to provide a semiconductor integrated circuit that can be implemented.

【0009】[0009]

【課題を解決するための手段】前述課題を解決するため
に本発明は下記のような特徴的構成を採用している。 (1)本発明の半導体集積回路は、チップ内の回路が複
数に分割されてブロック化され、半導体ウエハ−上にお
いて隣合ったブロックどうしの信号端子どうしが電気的
に接続され、かつ各ブロック間が切り離し可能な状態に
配置されており、任意の箇所で1チップを構成する事を
可能ならしめている。
In order to solve the above-mentioned problems, the present invention employs the following characteristic configuration. (1) In a semiconductor integrated circuit according to the present invention, a circuit in a chip is divided into a plurality of blocks to form blocks, signal terminals of adjacent blocks on a semiconductor wafer are electrically connected to each other, and a signal Are arranged in a detachable state, and it is possible to configure one chip at an arbitrary position.

【0010】(2)上記(1)に記載した回路であっ
て、任意の箇所で1チップを構成する場合において、使
用されるパッドは全て上記1チップを構成する前のもの
と同じである。
(2) In the circuit described in the above (1), when one chip is formed at an arbitrary position, all pads used are the same as those before forming the one chip.

【0011】(3)上記(1)に記載した回路であっ
て、半導体ウエハ−上において、複数に分割されたブロ
ックの中に不良ブロックが存在する場合、上記不良ブロ
ック分だけシフトすることにより、新たな1チップを構
成する手段を備えている。
(3) In the circuit described in the above (1), when a defective block is present among a plurality of divided blocks on a semiconductor wafer, the circuit is shifted by the amount of the defective block. There is provided means for forming a new one chip.

【0012】(4)上記(1)に記載した回路であっ
て、半導体ウエハ−上において、チップ内の回路は左右
に二分割されてブロック化されている。
(4) In the circuit described in (1), the circuit in the chip is divided into two parts on the semiconductor wafer and divided into blocks on the right and left sides.

【0013】(5)上記(1)に記載した回路であっ
て、半導体ウエハ−上において、チップ内の回路は上下
左右に四分割されてブロック化されている。
(5) In the circuit described in the above (1), on a semiconductor wafer, a circuit in a chip is divided into upper, lower, left, and right and divided into four blocks.

【0014】[0014]

【発明の実施の形態】(第1実施形態)図1は本発明の
第1実施形態に係る半導体集積回路の要部構成を示す平
面図である。図1において、1ー1ないし1ー6及び1
ー1′ないし1ー6′はパッドであり、2ー1ないし2
ー6は信号端子である。
DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) FIG. 1 is a plan view showing a main part of a semiconductor integrated circuit according to a first embodiment of the present invention. In FIG. 1, 1-1 to 1-6 and 1
-1 'to 1-6' are pads, and 2-1 to 2
-6 is a signal terminal.

【0015】図1に示すように、本実施形態の半導体チ
ップは、1チップ内の回路が機能Aのブロックと機能B
のブロックとに二分割されている。そして例えばチップ
Xにおける機能Aのブロックおよび機能Bのブロックに
着目してみると、信号端子2−1ないし2−6はパッド
1−1ないし1−6にそれぞれ接続されている。上記パ
ッド1−1ないし1−6は、パッド1−1′ないし1−
6′にそれぞれ接続されている。また機能Aのブロック
における端子2−7と、機能Bのブロックにおける端子
2−8とは内部で接続されている。
As shown in FIG. 1, in a semiconductor chip of this embodiment, a circuit in one chip is composed of a block having a function A and a circuit having a function B.
Is divided into two blocks. For example, focusing on the function A block and the function B block of the chip X, the signal terminals 2-1 to 2-6 are connected to the pads 1-1 to 1-6, respectively. The pads 1-1 to 1-6 correspond to the pads 1-1 'to 1-
6 '. The terminal 2-7 in the function A block and the terminal 2-8 in the function B block are internally connected.

【0016】チップXにおいて機能Aのブロックが不良
である場合、チップXの機能Bのブロックとその右隣に
位置している別のチップの機能Aのブロックとを使用
し、新たなチップYとする。このチップYとチップXと
の機能ブロックの内容及び使用するパッドの配置は全て
同じであるため、良品としての1チップが取れる。
If the block of the function A in the chip X is defective, the block of the function B of the chip X and the block of the function A of another chip located on the right side thereof are used, and the new chip Y and the block of the function A are used. I do. Since the contents of the functional blocks and the arrangement of the pads to be used for the chips Y and X are all the same, one non-defective chip can be obtained.

【0017】かくして本実施形態においては、例えば検
査工程等において、一つの機能ブロックに不良が存在す
ることが検知されても、隣合った機能ブロックが良品で
あれば、チップとして良品と認めることができ、通常の
1チップ構成の場合よりも遥かに歩留まりが向上する。
Thus, in this embodiment, even if it is detected in one inspection step or the like that a defect exists in one functional block, if the adjacent functional blocks are non-defective, it may be recognized as a non-defective chip. As a result, the yield is much improved as compared with the normal one-chip configuration.

【0018】(変形例)実施形態に示された半導体集積
回路は、下記の変形例を含んでいる。例えば、1チップ
内の回路を三つ以上に分割し前記実施形態と同様な回路
構成とすることができ、また、半導体ウエハ−上におい
て、複数に分割されたブロックの中に不良ブロックが存
在する場合、上記不良ブロック分だけシフトすることに
より、新たな1チップを構成する手段を備えたものとす
ることができる。
(Modifications) The semiconductor integrated circuit shown in the embodiment includes the following modifications. For example, a circuit in one chip can be divided into three or more to have a circuit configuration similar to that of the above embodiment, and a defective block exists in a plurality of divided blocks on a semiconductor wafer. In such a case, it is possible to provide a means for forming a new one chip by shifting by the defective block.

【0019】[0019]

【発明の効果】本発明によれば、一つの機能ブロックに
不良が存在しても、隣合った機能ブロックが良品であれ
ば、良品のチップとして取り扱えるので、1チップ構成
の場合に比べて生産歩留りを著しく向上できる上、鏡面
対称の機能ブロック単体チップを格別に用意する必要が
なく、しかも半導体チップ内の不良機能ブロックの電気
的な切り離し及び良品機能ブロック単体チップの電気的
な接続処理等を格別に行なうことなく良品化をはかるこ
とのできる半導体集積回路を提供できる。
According to the present invention, even if there is a defect in one functional block, if the adjacent functional blocks are non-defective, they can be handled as non-defective chips. Yield can be significantly improved, and there is no need to specially prepare a mirror-symmetrical function block unit chip, and electrical disconnection of defective function blocks in a semiconductor chip and electrical connection processing of non-defective function block unit chips can be performed. It is possible to provide a semiconductor integrated circuit that can be made non-defective without special treatment.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1実施形態に係る半導体集積回路の
要部構成を示す図。
FIG. 1 is a diagram showing a main configuration of a semiconductor integrated circuit according to a first embodiment of the present invention.

【図2】従来例に係る半導体集積回路の構成を示す図
で、半導体チップの一部を取り出して示す部分断面図。
FIG. 2 is a diagram showing a configuration of a semiconductor integrated circuit according to a conventional example, and is a partial cross-sectional view showing a part of a semiconductor chip.

【図3】従来例に係る半導体集積回路の構成を示す図
で、図2に示す構造の半導体チップの概略的な平面図。
FIG. 3 is a diagram showing a configuration of a semiconductor integrated circuit according to a conventional example, and is a schematic plan view of a semiconductor chip having a structure shown in FIG. 2;

【符号の説明】[Explanation of symbols]

1ー1〜1ー6,1ー1′〜1ー6′ パッド 2ー1〜2ー6 信号端子 3.8 チップ 4,9,17 パッド 5,10 絶縁保護膜 6 超音波接着箇所 11 メタル線切断部分 12 バンプ接続箇所 13〜16 機能ブロック 18,19 メタル線 1-1 to 1-6, 1-1 'to 1-6' Pad 2-1 to 2-6 Signal Terminal 3.8 Chip 4, 9, 17 Pad 5, 10 Insulation Protective Film 6 Ultrasonic Bonding Location 11 Metal Line cutting part 12 Bump connection part 13-16 Function block 18, 19 Metal wire

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】半導体チップ内の回路が複数に分割されて
ブロック化され、半導体ウエハ−上において隣合ったブ
ロックどうしの信号端子どうしが電気的に接続され、か
つ各ブロック間が切り離し可能な状態に配置されてお
り、任意の箇所で1チップを構成する事を可能ならしめ
たことを特徴とする半導体集積回路。
A circuit in a semiconductor chip is divided into a plurality of blocks to form blocks, signal terminals of adjacent blocks on a semiconductor wafer are electrically connected to each other, and the blocks can be separated from each other. A semiconductor integrated circuit, wherein one chip can be configured at an arbitrary position.
【請求項2】任意の箇所で1チップを構成する場合にお
いて、使用されるパッドは全て上記1チップを構成する
前のものと同じであることを特徴とする請求項1に記載
の半導体集積回路。
2. The semiconductor integrated circuit according to claim 1, wherein when one chip is formed at an arbitrary position, all pads used are the same as those before forming said one chip. .
【請求項3】半導体ウエハ−上において、複数に分割さ
れたブロックの中に不良ブロックが存在する場合、上記
不良ブロック分だけシフトすることにより、新たな1チ
ップを構成する手段を備えたことを特徴とする請求項1
に記載の半導体集積回路。
3. When a defective block is present among a plurality of divided blocks on a semiconductor wafer, a means for forming a new chip by shifting by the defective block is provided. Claim 1.
3. The semiconductor integrated circuit according to claim 1.
【請求項4】半導体ウエハ−上において、チップ内の回
路は左右に二分割されてブロック化されることを特徴と
する請求項1に記載の半導体集積回路。
4. The semiconductor integrated circuit according to claim 1, wherein the circuit in the chip is divided into two parts on the semiconductor wafer and divided into left and right parts.
【請求項5】半導体ウエハ−上において、チップ内の回
路は上下左右に四分割されてブロック化されることを特
徴とする請求項1に記載の半導体集積回路。
5. The semiconductor integrated circuit according to claim 1, wherein the circuit in the chip is divided into four parts vertically and horizontally on a semiconductor wafer to form a block.
JP9317607A 1997-11-04 1997-11-04 Semiconductor integrated circuit Pending JPH11145403A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9317607A JPH11145403A (en) 1997-11-04 1997-11-04 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9317607A JPH11145403A (en) 1997-11-04 1997-11-04 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPH11145403A true JPH11145403A (en) 1999-05-28

Family

ID=18090093

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9317607A Pending JPH11145403A (en) 1997-11-04 1997-11-04 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPH11145403A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6972487B2 (en) 2001-03-30 2005-12-06 Fujitsu Limited Multi chip package structure having a plurality of semiconductor chips mounted in the same package

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6972487B2 (en) 2001-03-30 2005-12-06 Fujitsu Limited Multi chip package structure having a plurality of semiconductor chips mounted in the same package

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