JPH1114524A - Diamond indenter - Google Patents

Diamond indenter

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Publication number
JPH1114524A
JPH1114524A JP9168916A JP16891697A JPH1114524A JP H1114524 A JPH1114524 A JP H1114524A JP 9168916 A JP9168916 A JP 9168916A JP 16891697 A JP16891697 A JP 16891697A JP H1114524 A JPH1114524 A JP H1114524A
Authority
JP
Japan
Prior art keywords
diamond
indenter
crystal
synthetic
knoop
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9168916A
Other languages
Japanese (ja)
Other versions
JP3885293B2 (en
Inventor
Hitoshi Sumiya
均 角谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
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Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP16891697A priority Critical patent/JP3885293B2/en
Publication of JPH1114524A publication Critical patent/JPH1114524A/en
Application granted granted Critical
Publication of JP3885293B2 publication Critical patent/JP3885293B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide a diamond indenter which is made of diamond synthesized by a temperature difference method under high pressure and has high hardness, long life, and small variance in quality. SOLUTION: The diamond indenter is made of the synthetic diamond monocrystal which is synthesized by the temperature difference method under high pressure and <=3 ppm in impurity amount. For example, the diamond indenter is a Knoop indenter; and the pressing-in direction of the indenter is parallel to the <001> direction of the synthetic diamond crystal and the direction of the long ridge of the indenter tip is parallel to the <110> direction of the synthetic diamond crystal.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、ダイヤモンド圧子
に関するもので、特に高硬度で、寿命が長く、品質のバ
ラツキの小さいダイヤモンド圧子を提供するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a diamond indenter, and more particularly to a diamond indenter having a high hardness, a long life and a small variation in quality.

【0002】[0002]

【従来の技術】従来の硬度測定用圧子は、天然ダイヤモ
ンド結晶の中から適当な原石を選択し、製作されていた
が、天然ダイヤモンドには結晶欠陥や不純物が多いため
充分なヌープ強度を有する圧子を得ることが難しく、原
石による寿命のバラツキが大きいという欠点があった。
2. Description of the Related Art A conventional indenter for measuring hardness has been manufactured by selecting an appropriate rough from natural diamond crystals. However, indenters having sufficient Knoop strength because natural diamond has many crystal defects and impurities. However, there is a disadvantage in that it is difficult to obtain such a material, and there is a large variation in the life due to the rough.

【0003】[0003]

【発明が解決しようとする課題】このように、天然ダイ
ヤモンドは結晶欠陥や不純物が多く、これらは圧縮によ
る破壊の起点となる。そのため、従来の天然ダイヤモン
ド製圧子は、品質が安定せず、寿命が大きくバラつくと
いう問題があり、特にダイヤモンド焼結体や、cBN焼
結体などの超硬質材料の硬度測定時にこれが大きな問題
となった。本発明者は上記の問題点を解決するため鋭意
研究の結果、高圧下温度差法により合成された不純物量
が3ppm以下の合成ダイヤモンド結晶を用いることで
天然ダイヤモンド製圧子のもつ欠点を解消することがで
きることを発見して本発明に到達した。すなわち、本発
明は高圧下の温度差法により合成されるダイヤモンドか
らなる、高硬度で寿命が長く品質のバラツキの小さいダ
イヤモンド圧子を提供することを目的とする。
As described above, natural diamond has many crystal defects and impurities, and these become starting points of destruction by compression. Therefore, the conventional natural diamond indenter has a problem that the quality is not stable and the life is greatly varied. This is a serious problem particularly when measuring the hardness of ultra-hard materials such as a diamond sintered body and a cBN sintered body. became. The inventor of the present invention has conducted intensive studies to solve the above-mentioned problems, and as a result, has solved the drawbacks of the natural diamond indenter by using a synthetic diamond crystal having an impurity amount of 3 ppm or less synthesized by a high-pressure temperature difference method. The inventors have found that the present invention can be performed, and arrived at the present invention. That is, an object of the present invention is to provide a diamond indenter made of diamond synthesized by a temperature difference method under high pressure and having high hardness, long life and small quality variation.

【0004】[0004]

【課題を解決するための手段】上記の目的は、本発明の
下記の態様により達成することができる。 (1)高圧下の温度差法により合成された不純物量3p
pm以下、好ましくは1ppm以下の合成ダイヤモンド
単結晶から作製されたことを特徴とするダイヤモンド圧
子。 (2)前記合成ダイヤモンド結晶の<100>方向が、
ダイヤモンド圧子の押し込み方向と平行であることを特
徴とする上記(1)に記載のダイヤモンド圧子。 (3)前記ダイヤモンド圧子がヌープ圧子であり、その
圧子の押し込み方向が前記合成ダイヤモンド結晶の<0
01>方向と平行であり、かつ圧子先端の長い方の陵の
方向が前記合成ダイヤモンド結晶の<110>方向と平
行であることを特徴とする上記(1)に記載のダイヤモ
ンド圧子。 (4)前記ダイヤモンド圧子がヴィッカース圧子であ
り、その圧子の押し込み方向が前記合成ダイヤモンド結
晶の<001>方向と平行であり、圧子先端の陵の方向
が合成ダイヤモンド結晶の<110>方向と平行である
ことを特徴とする上記(1)に記載のダイヤモンド圧
子。
The above objects can be achieved by the following aspects of the present invention. (1) Impurity amount 3p synthesized by temperature difference method under high pressure
A diamond indenter made of a synthetic diamond single crystal of pm or less, preferably 1 ppm or less. (2) The <100> direction of the synthetic diamond crystal is
The diamond indenter according to the above (1), which is parallel to the direction in which the diamond indenter is pushed. (3) The diamond indenter is a Knoop indenter, and the indentation direction of the indenter is <0 of the synthetic diamond crystal.
The diamond indenter according to the above (1), wherein the direction of the longer ridge at the tip of the indenter is parallel to the <110> direction of the synthetic diamond crystal. (4) The diamond indenter is a Vickers indenter, the indentation direction of the indenter is parallel to the <001> direction of the synthetic diamond crystal, and the direction of the tip of the indenter is parallel to the <110> direction of the synthetic diamond crystal. The diamond indenter according to the above (1), wherein:

【0005】[0005]

【発明の実施の形態】天然ダイヤモンドは、多くの窒素
不純物を含み、地球内部の複雑な成長履歴を反映して、
全ての天然ダイヤモンドは結晶内に多くの歪や結晶欠陥
をもち、結晶によるバラツキも大きい。天然ダイヤモン
ドからは、不純物や結晶欠陥を含まない高い品質の結晶
を安定入手することはほとんど不可能である。これに対
し、ダイヤモンドが熱力学的に安定な高圧高温条件で育
成される合成ダイヤモンド単結晶は、天然ダイヤモンド
よりはるかに結晶性に優れ、品質も安定している。しか
し、通常の合成ダイヤモンドは、窒素を孤立置換型不純
物として数十ppm〜数百ppm含み(Ib型)、各種
の特性に影響を及ぼす。この窒素不純物は、窒素ゲッタ
ーを溶媒に添加することで除去できるが、インクルージ
ョンを含み易くなり良質な結晶が得られなくなる。しか
し、本発明者らにより、窒素ゲッターを添加しても良質
な結晶が得られる方法が提案された(Sumiya etal., Di
amond and Related Materials, 5, 1359(1996) )。こ
のようにして、窒素不純物を3ppm以下に制御した高
純度合成ダイヤモンド結晶(IIa型)は、不純物による
結晶欠陥や歪がない。このため、硬度、強度などの機械
的特性が向上し、品質のバラツキも小さくなると考えら
れる。
DETAILED DESCRIPTION OF THE INVENTION Natural diamond contains many nitrogen impurities and reflects the complex growth history inside the earth.
All natural diamonds have many strains and crystal defects in the crystal, and there is great variation due to the crystal. From natural diamond, it is almost impossible to stably obtain high-quality crystals free of impurities and crystal defects. On the other hand, a synthetic diamond single crystal in which diamond is grown under high pressure and high temperature conditions that are thermodynamically stable has much better crystallinity than natural diamond and stable quality. However, ordinary synthetic diamond contains several tens ppm to several hundred ppm of nitrogen as an isolated substitutional impurity (Ib type), and affects various characteristics. This nitrogen impurity can be removed by adding a nitrogen getter to the solvent, but inclusions are likely to be included and a good-quality crystal cannot be obtained. However, the present inventors have proposed a method of obtaining a high-quality crystal even when a nitrogen getter is added (Sumiya et al., Di.
amond and Related Materials, 5, 1359 (1996)). Thus, the high-purity synthetic diamond crystal (IIa type) in which the nitrogen impurity is controlled to 3 ppm or less has no crystal defects or distortion due to the impurity. For this reason, it is considered that mechanical properties such as hardness and strength are improved, and variations in quality are reduced.

【0006】上記の窒素不純物を3ppm以下に制御し
た高純度合成ダイヤモンド結晶(IIa型)は、例えば、
次のような方法により得ることができる。すなわち、炭
素源として高純度黒鉛、溶媒金属としてFe−Co等を
用い、窒素ゲッターとしてTiを1.0〜2.0重量%
の割合で溶媒に添加する。得られた原料系は、種結晶と
共に超高圧発生装置内に配置し、圧力約5.5GPa、
温度約1350℃に数時間〜数十時間、炭素源と種結晶
部間の温度差20〜50℃として種結晶上にダイヤモン
ドを生長させる。
A high-purity synthetic diamond crystal (IIa type) in which the nitrogen impurity is controlled to 3 ppm or less is, for example,
It can be obtained by the following method. That is, high-purity graphite is used as a carbon source, Fe-Co or the like is used as a solvent metal, and 1.0 to 2.0% by weight of Ti is used as a nitrogen getter.
To the solvent. The obtained raw material system was placed in an ultra-high pressure generator together with a seed crystal, and the pressure was about 5.5 GPa.
The diamond is grown on the seed crystal at a temperature of about 1350 ° C. for several hours to several tens of hours with a temperature difference of 20 to 50 ° C. between the carbon source and the seed crystal part.

【0007】このようにして得られたIIa型ダイヤモン
ド結晶からヌープ圧子及びヴィッカース圧子は次のよう
にして作製する。ヌープ圧子の場合はヌープ圧子の押し
込み方向(Z軸方向)を、ダイヤモンドの<001>方
向、かつ、ヌープ圧子の長軸方向(圧子先端の長い方の
陵の方向)をダイヤモンドの<110>方向となるよう
に研磨してヌープ圧子の形状に仕上げる〔図3(a)参
照〕。ヴィッカース圧子の場合はヴィッカース圧子の押
し込み方向(Z軸方向)を、ダイヤモンドの<001>
方向、かつ、ヴィッカース圧子の対角方向(圧子先端の
陵の方向)をダイヤモンドの<110>方向となるよう
に、ダイヤモンドを研磨し、ヴィッカース圧子の形状に
仕上げる〔図3(b)参照〕。
A Knoop indenter and a Vickers indenter are produced from the IIa type diamond crystal thus obtained as follows. In the case of a Knoop indenter, the pushing direction (Z-axis direction) of the Knoop indenter is set in the <001> direction of the diamond, and the long axis direction of the Knoop indenter (the direction of the longer ridge at the tip of the indenter) is set in the <110> direction of the diamond. And finished in the shape of a Knoop indenter (see FIG. 3A). In the case of a Vickers indenter, the pushing direction (Z-axis direction) of the Vickers indenter is set to <001> of diamond.
The diamond is polished so that the direction and the diagonal direction of the Vickers indenter (the direction of the tip of the indenter) are the <110> direction of the diamond, and the diamond is finished in the shape of a Vickers indenter (see FIG. 3B).

【0008】本発明者等は、この高純度合成ダイヤモン
ドの機械的特性を詳細に調べたところ、天然ダイヤモン
ドや従来の合成ダイヤモンドに見られない特徴を有する
ことを見いだした。表1に、窒素量の異なる合成ダイヤ
モンド結晶の(100)面の<100>方向及び<11
0>方向のヌープ硬度を測定した結果を示す。(10
0)面<100>方向のヌープ硬度は、図1に示すよう
に、窒素量の減少とともに向上する。窒素量1ppm以
下のものは、硬度10000kg/mm2 以上と高硬度
である。また、窒素が3ppm以下の合成ダイヤモンド
結晶においては、(100)面<110>方向は正常な
ヌープ圧痕が形成されず、非常に硬いことを示す。図2
に、窒素量0.1ppmの合成IIa型ダイヤモンド結晶
と、60〜240ppmの窒素を含むIb型ダイヤモン
ド結晶、及び天然のIa型ダイヤモンド結晶(凝集型窒
素不純物を約1000ppm含む)の(100)面上の
各方位のヌープ硬度の測定結果を示す。
The present inventors have examined the mechanical properties of the high-purity synthetic diamond in detail and found that the high-purity synthetic diamond has characteristics not found in natural diamond and conventional synthetic diamond. Table 1 shows the <100> direction and <11> of the (100) plane of synthetic diamond crystals having different nitrogen contents.
The result of measuring the Knoop hardness in the 0> direction is shown. (10
0) The Knoop hardness in the <100> plane increases as the amount of nitrogen decreases, as shown in FIG. Those having a nitrogen content of 1 ppm or less have high hardness of 10,000 kg / mm 2 or more. In the case of a synthetic diamond crystal containing 3 ppm or less of nitrogen, a normal Knoop indentation is not formed in the (100) plane <110> direction, indicating that the crystal is very hard. FIG.
On the (100) plane of a synthetic IIa diamond crystal having a nitrogen amount of 0.1 ppm, an Ib type diamond crystal containing 60 to 240 ppm of nitrogen, and a natural Ia type diamond crystal (containing about 1000 ppm of aggregated nitrogen impurities) 3 shows the measurement results of the Knoop hardness in each direction.

【0009】天然Ia型ダイヤモンドや通常の合成Ib
型ダイヤモンドは(100)面上では<100>方向が
<110>方向より硬いが、不純物量3ppm以下のII
a型ダイヤモンドはこれとは逆の傾向を示し、特に<1
10>方向は、ヌープ圧子による圧痕が形成されず、極
めて硬い。これは、合成IIa型ダイヤモンド結晶は圧子
押し込みによる変形の起点となる不純物、欠陥が極めて
少ないためと考えられる。なお、不純物3ppmを越え
るとこの傾向は見られなくなり、天然Ia型ダイヤモン
ド結晶や合成Ib型ダイヤモンド結晶と同様の傾向を示
すようになる。以上の知見から、不純物3ppm以下の
合成ダイヤモンドをダイヤモンド圧子として用い、ま
た、圧子の結晶方位を図3のように定めた。その結果、
従来のダイヤモンド圧子よりはるかに高い強度、長い寿
命の圧子が得られることがわかった。
[0009] Natural Ia type diamond and ordinary synthetic Ib
In the type diamond, the <100> direction is harder than the <110> direction on the (100) plane, but II
The a-type diamond shows the opposite tendency, especially <1.
In the 10> direction, no indentation is formed by the Knoop indenter, and the direction is extremely hard. This is presumably because the synthetic IIa type diamond crystal has very few impurities and defects which are the starting points of deformation due to indentation. When the impurity exceeds 3 ppm, this tendency is not observed, and the same tendency as that of the natural Ia type diamond crystal and the synthetic Ib type diamond crystal is obtained. From the above findings, synthetic diamond having an impurity of 3 ppm or less was used as a diamond indenter, and the crystal orientation of the indenter was determined as shown in FIG. as a result,
It was found that an indenter with much higher strength and longer life than conventional diamond indenters could be obtained.

【0010】[0010]

【実施例】 (実施例1)高圧下の温度差法によるダイヤモンド結晶
の合成において、原料に高純度黒鉛、溶媒にFe−Co
溶媒を用い、窒素ゲッターとしてTiを1.5重量%溶
媒に添加し、圧力5.5GPa、温度1350℃、合成
時間20時間で、約0.2カラットの高純度IIa型ダイ
ヤモンド単結晶を合成した。得られたダイヤモンド結晶
は、無色透明で、紫外可視スペクトル、赤外線スペクト
ルとも、窒素などの不純物による吸収がほとんど認めら
れず、不純物0.1ppm以下の高純度IIa型結晶であ
ることを確認した。このダイヤモンド結晶から、ヌープ
圧子を以下のように作製した。ヌープ圧子の押し込み方
向(Z軸方向)を、ダイヤモンドの<001>方向、か
つ、ヌープ圧子の長軸方向(圧子先端の長い方の陵の方
向)をダイヤモンドの<110>方向となるように、ダ
イヤモンドを研磨し、ヌープ圧子の形状に仕上げた。こ
うして作製したヌープ圧子で、ダイヤモンド焼結体の硬
度を、荷重10kg重で測定し、その寿命を従来の天然
ダイヤモンド製ヌープ圧子の場合と比較した。高純度合
成IIa型ダイヤモンド製ヌープ圧子は従来のヌープ圧子
の10倍以上の寿命であった。また、原石による寿命の
バラツキも極めて小さかった。
EXAMPLES Example 1 In the synthesis of diamond crystals by the temperature difference method under high pressure, high-purity graphite was used as a raw material and Fe—Co was used as a solvent.
Using a solvent, Ti was added as a nitrogen getter to a 1.5% by weight solvent, and a pressure of 5.5 GPa, a temperature of 1350 ° C., and a synthesis time of 20 hours were used to synthesize a high-purity type IIa diamond single crystal of about 0.2 carats. . The obtained diamond crystal was colorless and transparent, and almost no absorption due to impurities such as nitrogen was recognized in both the ultraviolet visible spectrum and the infrared spectrum, and it was confirmed that the diamond crystal was a high-purity type IIa crystal having an impurity of 0.1 ppm or less. From this diamond crystal, a Knoop indenter was produced as follows. The push direction (Z-axis direction) of the Knoop indenter is the <001> direction of the diamond, and the long axis direction of the Knoop indenter (the direction of the longer ridge at the tip of the indenter) is the <110> direction of the diamond. The diamond was polished to a Knoop indenter shape. The hardness of the diamond sintered body was measured with a load of 10 kg weight using the Knoop indenter thus manufactured, and its life was compared with that of a conventional natural diamond Knoop indenter. The high-purity synthetic type IIa diamond Knoop indenter has a service life that is at least 10 times that of the conventional Knoop indenter. Also, the variation in the life due to the rough stone was extremely small.

【0011】(実施例2)実施例1と同様に合成した不
純物0.1ppm以下のダイヤモンド結晶から、ヴィッ
カース圧子を次のように作製した。ヴィッカース圧子の
押し込み方向(Z軸方向)を、ダイヤモンドの<001
>方向、かつ、ヴィッカース圧子の対角方向(圧子先端
の陵の方向)をダイヤモンドの<110>方向となるよ
うに、ダイヤモンドを研磨し、ヴィッカース圧子の形状
に仕上げた。こうして作製したヴィッカース圧子で、ダ
イヤモンド焼結体の硬度を、荷重10kg重で測定し、
その寿命を従来の天然ダイヤモンド製ヴィッカース圧子
の場合と比較した。高純度合成IIa型ダイヤモンド製ヴ
ィッカース圧子は従来のヴィッカース圧子の10倍以上
の寿命であった。また、原石による寿命のバラツキも極
めて小さかった。
(Example 2) A Vickers indenter was produced as follows from a diamond crystal having an impurity of 0.1 ppm or less synthesized in the same manner as in Example 1. The Vickers indenter indentation direction (Z-axis direction) is
The diamond was polished so that the> direction and the diagonal direction of the Vickers indenter (the direction of the ridge at the tip of the indenter) became the <110> direction of the diamond, and finished in the shape of a Vickers indenter. With the Vickers indenter thus manufactured, the hardness of the diamond sintered body was measured under a load of 10 kg,
Its life was compared with that of a conventional natural diamond Vickers indenter. The Vickers indenter made of a high-purity synthetic type IIa diamond has a life ten times or more that of a conventional Vickers indenter. Also, the variation in the life due to the rough stone was extremely small.

【0012】[0012]

【比較例】窒素ゲッターを用いずに、他は実施例1と同
様にしてダイヤモンドを合成した。得られたダイヤモン
ドは、約0.3カラットの窒素不純物を含んだIb型結
晶で、黄色を呈していた。赤外吸収スペクトルより見積
もった窒素量は約60ppmであった。この合成Ib型
ダイヤモンド結晶より、実施例1と同様にしてヌープ圧
子を作製した。ダイヤモンド焼結体の硬度測定テストで
は、寿命のバラツキは小さいものの、数回〜数十回の使
用で破壊した。
Comparative Example A diamond was synthesized in the same manner as in Example 1 except that no nitrogen getter was used. The resulting diamond was an Ib type crystal containing about 0.3 carats of nitrogen impurities and was yellow. The amount of nitrogen estimated from the infrared absorption spectrum was about 60 ppm. A Knoop indenter was produced from this synthetic Ib type diamond crystal in the same manner as in Example 1. In the hardness measurement test of the diamond sintered body, although the variation in the life was small, the diamond was broken after several to several tens of uses.

【0013】[0013]

【表1】 *圧痕が形成されないため測定不可[Table 1] * Measurement is not possible because no indentation is formed

【0014】[0014]

【発明の効果】本発明のダイヤモンド圧子は、ヌープ圧
子又はヴィッカース圧子のいずれも硬度が非常に高く、
寿命も従来の圧子と比べて10倍以上に達する。原石に
よる寿命のバラツキも極めて小さい。勿論、ヌープ圧子
やヴィッカース圧子以外のダイヤモンド圧子やインデン
ターに適用することができる。
EFFECT OF THE INVENTION The diamond indenter of the present invention has a very high hardness of either a Knoop indenter or a Vickers indenter,
The service life also reaches 10 times or more as compared with the conventional indenter. The variation in life due to rough stones is extremely small. Of course, the present invention can be applied to diamond indenters and indenters other than Knoop indenters and Vickers indenters.

【図面の簡単な説明】[Brief description of the drawings]

【図1】図1は本発明による合成ダイヤモンド結晶の
(100)<100>のヌープ硬度と窒素不純物量との
関係を示すグラフである。
FIG. 1 is a graph showing the relationship between the (100) <100> Knoop hardness and the amount of nitrogen impurities of a synthetic diamond crystal according to the present invention.

【図2】図2は本発明による合成ダイヤモンド結晶を含
む各種ダイヤモンド結晶の(100)面上のヌープ硬度
の異方性を示すグラフである。
FIG. 2 is a graph showing the anisotropy of Knoop hardness on the (100) plane of various diamond crystals including a synthetic diamond crystal according to the present invention.

【図3】図3(a)及び(b)は本発明に係るダイヤモ
ンド圧子の先端部の形状示す概念図である〔(a)はヌ
ープ圧子、(b)はヴィッカース圧子で、それぞれ上の
図が横面図、下の図が正面図である〕。
FIGS. 3 (a) and 3 (b) are conceptual diagrams showing the shape of the tip of a diamond indenter according to the present invention [(a) is a Knoop indenter, (b) is a Vickers indenter, and each of the above figures is an upper diagram. Is a side view, and the lower figure is a front view].

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 高圧下の温度差法により合成された不純
物量3ppm以下の合成ダイヤモンド単結晶から作製さ
れたことを特徴とするダイヤモンド圧子。
1. A diamond indenter manufactured from a synthetic diamond single crystal having an impurity amount of 3 ppm or less synthesized by a temperature difference method under high pressure.
【請求項2】 前記合成ダイヤモンド結晶の<100>
方向が、ダイヤモンド圧子の押し込み方向と平行である
ことを特徴とする請求項1に記載のダイヤモンド圧子。
2. The synthetic diamond crystal <100>
The diamond indenter according to claim 1, wherein the direction is parallel to the direction in which the diamond indenter is pushed.
【請求項3】 前記ダイヤモンド圧子がヌープ圧子であ
り、その圧子の押し込み方向が前記合成ダイヤモンド結
晶の<001>方向と平行であり、かつ圧子先端の長い
方の陵の方向が前記合成ダイヤモンド結晶の<110>
方向と平行であることを特徴とする請求項1に記載のダ
イヤモンド圧子。
3. The diamond indenter is a Knoop indenter, the indentation direction of the indenter is parallel to the <001> direction of the synthetic diamond crystal, and the direction of the longer ridge at the tip of the indenter is the direction of the synthetic diamond crystal. <110>
The diamond indenter according to claim 1, wherein the indenter is parallel to the direction.
【請求項4】 前記ダイヤモンド圧子がヴィッカース圧
子であり、その圧子の押し込み方向が前記合成ダイヤモ
ンド結晶の<001>方向と平行であり、圧子先端の陵
の方向が合成ダイヤモンド結晶の<110>方向と平行
であることを特徴とする請求項1に記載のダイヤモンド
圧子。
4. The diamond indenter is a Vickers indenter, the indentation direction of the indenter is parallel to the <001> direction of the synthetic diamond crystal, and the direction of the ridge of the indenter tip is the <110> direction of the synthetic diamond crystal. The diamond indenter according to claim 1, wherein the indenter is parallel.
JP16891697A 1997-06-25 1997-06-25 Diamond indenter Expired - Fee Related JP3885293B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16891697A JP3885293B2 (en) 1997-06-25 1997-06-25 Diamond indenter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16891697A JP3885293B2 (en) 1997-06-25 1997-06-25 Diamond indenter

Publications (2)

Publication Number Publication Date
JPH1114524A true JPH1114524A (en) 1999-01-22
JP3885293B2 JP3885293B2 (en) 2007-02-21

Family

ID=15876943

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16891697A Expired - Fee Related JP3885293B2 (en) 1997-06-25 1997-06-25 Diamond indenter

Country Status (1)

Country Link
JP (1) JP3885293B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1671726A1 (en) * 2003-10-10 2006-06-21 SUMITOMO ELECTRIC INDUSTRIES Ltd Diamond tool, synthetic single crystal diamond and method for synthesizing single crystal diamond, and diamond jewelry
JP2008180568A (en) * 2007-01-24 2008-08-07 Sumitomo Electric Ind Ltd Diamond indentor
JP2013024649A (en) * 2011-07-19 2013-02-04 Allied Material Corp Diamond indenter and manufacturing method thereof
KR20200038883A (en) * 2017-08-10 2020-04-14 스미토모덴키고교가부시키가이샤 Indenter made of polycrystalline diamond, method for evaluating crack generation load using the same, and apparatus for evaluating the same

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0277176A (en) * 1988-04-30 1990-03-16 Osaka Diamond Ind Co Ltd Light emitting chip
JPH07309696A (en) * 1994-03-25 1995-11-28 Tokyo Gas Co Ltd Diamond crystal and its production
JPH08151297A (en) * 1994-10-05 1996-06-11 Sumitomo Electric Ind Ltd Production of diamond
JPH0972840A (en) * 1995-09-04 1997-03-18 Shimadzu Corp Indentation-type hardness tester
JPH09122739A (en) * 1995-07-07 1997-05-13 General Electric Co <Ge> Composite diamond wire drawing die
JPH09165295A (en) * 1994-12-05 1997-06-24 Sumitomo Electric Ind Ltd Diamond single crystal little in defect and synthetic method therefor

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0277176A (en) * 1988-04-30 1990-03-16 Osaka Diamond Ind Co Ltd Light emitting chip
JPH07309696A (en) * 1994-03-25 1995-11-28 Tokyo Gas Co Ltd Diamond crystal and its production
JPH08151297A (en) * 1994-10-05 1996-06-11 Sumitomo Electric Ind Ltd Production of diamond
JPH09165295A (en) * 1994-12-05 1997-06-24 Sumitomo Electric Ind Ltd Diamond single crystal little in defect and synthetic method therefor
JPH09122739A (en) * 1995-07-07 1997-05-13 General Electric Co <Ge> Composite diamond wire drawing die
JPH0972840A (en) * 1995-09-04 1997-03-18 Shimadzu Corp Indentation-type hardness tester

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1671726A1 (en) * 2003-10-10 2006-06-21 SUMITOMO ELECTRIC INDUSTRIES Ltd Diamond tool, synthetic single crystal diamond and method for synthesizing single crystal diamond, and diamond jewelry
EP1671726A4 (en) * 2003-10-10 2007-07-25 Sumitomo Electric Industries Diamond tool, synthetic single crystal diamond and method for synthesizing single crystal diamond, and diamond jewelry
US7404399B2 (en) 2003-10-10 2008-07-29 Sumitomo Electric Industries, Ltd. Diamond tool, synthetic single crystal diamond and method of synthesizing single crystal diamond, and diamond jewelry
JP2008180568A (en) * 2007-01-24 2008-08-07 Sumitomo Electric Ind Ltd Diamond indentor
JP2013024649A (en) * 2011-07-19 2013-02-04 Allied Material Corp Diamond indenter and manufacturing method thereof
KR20200038883A (en) * 2017-08-10 2020-04-14 스미토모덴키고교가부시키가이샤 Indenter made of polycrystalline diamond, method for evaluating crack generation load using the same, and apparatus for evaluating the same

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