JPH11142127A - Wafer surface inspecting method and equipment therefor - Google Patents

Wafer surface inspecting method and equipment therefor

Info

Publication number
JPH11142127A
JPH11142127A JP32393997A JP32393997A JPH11142127A JP H11142127 A JPH11142127 A JP H11142127A JP 32393997 A JP32393997 A JP 32393997A JP 32393997 A JP32393997 A JP 32393997A JP H11142127 A JPH11142127 A JP H11142127A
Authority
JP
Japan
Prior art keywords
wafer surface
light
wafer
point
foreign matter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP32393997A
Other languages
Japanese (ja)
Inventor
Yoichiro Iwa
Akihiko Sekine
Hiroaki Soma
Toshikazu Yoshino
陽一郎 岩
浩明 相馬
寿和 芳野
明彦 関根
Original Assignee
Topcon Corp
株式会社トプコン
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Topcon Corp, 株式会社トプコン filed Critical Topcon Corp
Priority to JP32393997A priority Critical patent/JPH11142127A/en
Priority claimed from US09/184,075 external-priority patent/US6104481A/en
Publication of JPH11142127A publication Critical patent/JPH11142127A/en
Application status is Pending legal-status Critical

Links

Abstract

PROBLEM TO BE SOLVED: To distinguish a foreign matter and a crack on a wafer surface from a dot type recessed part existing on the surface, by independently photoelectrically converting two wavelengths of scattered lights from a light convergence point, and using the difference of intensities of the respective signals.
SOLUTION: By detecting the difference in the intensities of scattered lights when the incident angles are changed, i.e., by detecting the magnitude of change of signals when the incident angles are changed, whether a scattering object is a foreign matter or a recessed part can be distinguished. Laser lights outputted from light sources 21, 22 are converged on the surface of a wafer with independent optical systems 24, 25. The lights outputted from the two light sources 21, 22 are converged on the surface of the wafer, in order to be measured at the same time at the same point. Two illuminating lights which have comparatively nearby different wavelengths are used, and the wafer is illuminated with two different incident angles. Two photoelectric converters 27, 28 receive the two scattered lights of comparatively nearby two different wavelengths at the same azimuth and angle to an incident surface, and output signals. A discriminating circuit 30 discriminates the foreign matter from a dot type recessed part by using the signals.
COPYRIGHT: (C)1999,JPO

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】本発明は,広くは各種物体のウェーハの表面検査方法及び装置に関し、詳しくは半導体ウェーハの表面の異物や傷等を検査するウェーハ表面検査方法に関するものである。 BACKGROUND OF THE INVENTION The present invention generally relates to surface inspection method and apparatus for wafer for various objects, and more particularly to a wafer surface inspection method for inspecting a foreign matter or scratches on the surface of the semiconductor wafer.

【0002】 [0002]

【従来の技術】一般に、半導体集積回路は、半導体基板のウェーハにフォトリソグラフィー工程で回路を形成することにより製造される。 In general, semiconductor integrated circuits are manufactured by forming a circuit in the photolithography process wafer of the semiconductor substrate. この際、1枚のウェーハの表面には、多数の同一の集積回路が作られ、最後にそれらを切り離して単独の集積回路チッブとする。 At this time, the surface of a single wafer, a large number of identical integrated circuits are made, finally disconnect them a single integrated circuit Chibbu.

【0003】ウェーハの表面に異物やキズが存在すると、その部分に形成される回路パターンに欠陥が生じ、 [0003] When foreign matter or scratches on the surface of the wafer is present, the defect occurs in the circuit pattern formed on that portion,
その集積回路は使用不能になる。 Its integrated circuit unusable. その結果、1枚のウェーハから取れる集積回路の数が減り、歩留まり低下を招く。 As a result, fewer take the integrated circuits from one wafer, resulting in a decrease in yield.

【0004】そこで、リソグラフィー工程に入る前に、 [0004] Therefore, before entering the lithography process,
半導体集積回路の材料となるウェーハを検査して、異物が存在しない事を確認している。 Check the wafer which is a material of the semiconductor integrated circuit, it has been confirmed that the foreign matter is not present.

【0005】この検査の方法としては、ウェーハ表面にレーザ光を集光し、その集光点からの散乱光を受光して、その受光信号に基いて異物等を検出する方法が一般的である。 As a method for this test, a laser beam is focused on the wafer surface, by receiving the scattered light from the condensing point, a method of detecting foreign matter on the basis of the received light signal is generally .

【0006】図1は、従来のウェーハ表面検査装置を示す。 [0006] Figure 1 illustrates a conventional wafer surface inspection device. 光源10にはレーザが用いられている。 Laser is used as the light source 10. 光源10を出た光は、光学系11によって入射角約20度でウェーハ12の表面に集光される。 Light exiting the light source 10 is focused on the surface of the wafer 12 at about 20 degrees angle of incidence by an optical system 11. 集光点13からの散乱光はレンズ14によって光電変換器15に受光される。 Scattered light from the condensing point 13 is received by the photoelectric converter 15 by the lens 14. ウェーハ12はモータ16によって回転され、それと同時に並進機構(図示せず)によって移動され、結果的に集光点13がウェーハ12の全面を走査するようになっている。 Wafer 12 is rotated by the motor 16, therewith are moved simultaneously by translation mechanism (not shown), resulting in the focal point 13 is adapted to scan the entire surface of the wafer 12.

【0007】散乱光を受光する光電変換器15は、集光点13が異物等を横切る際に散乱光の強度に応じたパルス状の信号を出力する。 [0007] The photoelectric converter 15 for receiving the scattered light, the focal point 13 outputs a pulse signal corresponding to the intensity of the scattered light when crossing the foreign matter. それゆえ、このパルス状の信号を信号検出回路17で検出し、その信号出力の大きさによって、散乱物体つまり異物の存在と大きさを判断するようになっている。 Therefore, to detect the pulse signal by the signal detecting circuit 17, the magnitude of the signal output, so as to determine the presence and size of the scattering object, that the foreign matter.

【0008】一方、集積回路の集積度の増加が回路パターンの微細化を進め、それによって検査すべき異物の大きさも微細化し、それとともに検査装置の感度が向上してきている。 On the other hand, advance the miniaturization of the circuit pattern increases the degree of integration of integrated circuits, thereby also the size finer foreign substance to be examined, the sensitivity along with the inspection apparatus it has been improved.

【0009】このような背景の下で、この検査によって異物と検出されたものの中に、回路パターンを作製する際に障害とならない程度の微小な点状の凹部が誤認によって含まれている事が近年判ってきた。 [0009] Under this background, among those detected as foreign by this test, be it small point-like recess of the grade which is not an obstacle in making the circuit pattern contained by misidentification It has been found in recent years.

【0010】つまり、集積回路製造上問題とならない凹部が異物と誤認されるため、使用可能なウェーハが不良と判定されてしまうことがあった。 [0010] That is, recesses that do not integrated circuit manufacturing problems because it is mistaken as foreign, was sometimes would be determined usable wafer defective. この凹部は、当然再洗浄によっても取り除けないから、結局使えないウェーハと判定され、無駄になっていた。 The recess, because not be removed even by naturally re-washing, it is determined that the wafer can not be used after all, had been wasted. このことは、今後、 This is the future,
ウェーハの大型化に伴って、無駄が大きくなっていく事を意味している。 Along with the increase in the size of the wafer, which means that the waste becomes larger.

【0011】 [0011]

【発明が解決しようとする課題】本発明の目的は、半導体基板その他のウェーハの表面検査の際に、ウェーハ表面上の異物や傷と、ウェーハ表面に存在する点状の凹部とを区別して検出できる検査方法及び装置を提供する事である。 The purpose of the 0008] The present invention, during the surface inspection of the semiconductor substrate other wafer, detected separately with foreign matter or scratches on the wafer surface, and a point-like recesses present on the wafer surface it is to provide an inspection method and apparatus capable.

【0012】 [0012]

【課題を解決するための手段】このような課題は、特許請求の範囲の各請求項に記載したウェーハ表面検査方法及び装置によって解決される。 Means for Solving the Problems] Such problem is solved by a wafer surface inspection method and apparatus described in the following claims.

【0013】たとえば、本発明の解決手段の1つは、光源からの光をウェーハ表面に集光し、集光点を走査しながら、集光点からの散乱光を光電変換器で受光し、光電変換器からの信号を検出することにより、ウェーハ表面上の異物や傷を検査するウェーハ表面検査方法において、2つの異なる波長の光を、異なる入射角で、同一点に集光し、集光点からの散乱光を2波長別々に光電変換し、各々の信号の強度差を利用して、ウェーハ表面上の異物や傷と、ウェーハ表面に存在する点状の凹部とを区別する事を特徴とするウェーハ表面検査方法である。 [0013] For example, one of the solutions of the present invention condenses the light from the light source to the wafer surface, while scanning the focal point, and receiving scattered light from the focal point by a photoelectric converter, by detecting a signal from the photoelectric converter, the wafer surface inspection method for inspecting a foreign matter or scratches on the wafer surface, light of two different wavelengths, at different angles of incidence, focused to the same point, the condenser the scattered light from the point two wavelengths separately performs photoelectric conversion, characterized by using the intensity difference of each signal, and the foreign matter or scratches on the wafer surface, that to distinguish between point-like recess which is present on the wafer surface a wafer surface inspection method to be.

【0014】また、本発明の別の解決手段は、光源と、 [0014] Another solution of the present invention includes a light source,
その光源からの光をウェーハ表面に集光する光学系と, An optical system for focusing the light from the light source on the wafer surface,
集光点をウェーハ表面の所定域にわたって走査するための走査手段と、集光点からの散乱光を受光する光電変換器を備えた受光部と、受光部からの信号を検出する信号検出器とを有するウェーハ表面検査装置において、前記光源は2つの異なる波長の光源であり,前記光学系は2 Scanning means for scanning the focal point over a predetermined area of ​​the wafer surface, and a light receiving unit having a photoelectric converter for receiving scattered light from the focal point, a signal detector for detecting signals from the light receiving portion in the wafer surface inspection apparatus having the light source is a light source of the two different wavelengths, wherein the optical system 2
つの波長の光を異なる入射角でウェーハ表面の同一点に集光するように構成され、さらに、前記受光部は2つの波長を別々に受光するように構成されていて、信号検出器からの出力を利用して、ウェーハ表面上の異物や傷等と、ウェーハ表面に存在する点状の凹部とを区別する弁別回路を設けた事を特徴とするウェーハ表面検査装置である。 One of which is configured to focused on the same point of the wafer surface at different incident angles of light of a wavelength, further wherein the receiving unit is a two wavelengths be configured to receive separately output from the signal detector by utilizing a foreign matter or scratches on the wafer surface, a wafer surface inspection device, characterized in that provided that distinguish discrimination circuit and a point-like recesses present on the wafer surface.

【0015】 [0015]

【発明の実施の形態】本発明は、種々の技術分野で利用されているウェーハ、たとえば半導体基板その他のウェーハの表面を検査するウェーハ表面検査方法及び装置を提供するものである。 DETAILED DESCRIPTION OF THE INVENTION The present invention is to provide a variety of wafers that are used in the art, for example, a wafer surface inspection method and apparatus for inspecting a surface of the semiconductor substrate other wafer.

【0016】ウェーハ表面に付着した異物等やウェーハ表面に形成された傷等から反射した散乱光の強さは、光源からの光の波長と異物や傷の大きさの関係で変わり、 The strength of the foreign matter adhering to the wafer surface and the like and scattered light reflected from the formed scratches on the wafer surface will vary by the size of the relationship between a light wavelength and the foreign matter and scratches from a light source,
また入射角と受光する方位・角度によって変化する事が判っている。 Also known is possible to vary the azimuth and angle of light with incident angle. つまり、散乱光の強さは、光の波長と、異物等の大きさと、光の入射角と、受光する方位・角度に依存して変化するのである。 That is, the intensity of the scattered light, the wavelength of light, the size of the foreign matter, and the incident angle of light is to vary depending on the azimuth and angle for receiving.

【0017】たとえば、前述したようにウェーハ表面の点状の凹部は異物と誤認されることがあるが、それは、 [0017] For example, although point-like recesses of the wafer surface as described above may be mistaken as foreign, it
可視域の波長よりもかなり小さい、異物と同等の散乱光を生じる領域において発生する事である。 Much smaller than the wavelength of the visible range, it is to occur in the region to produce foreign matter equivalent scattered light. このような領域では、受光部の方位・角度を固定した時、入射角の変化に対する散乱光の強さの変化は、ウェーハ表面に付着した異物に対するものと比べて、表面の微小な凹部の方が大きい。 In such regions, when fixing the azimuth-angle of the light receiving portion, the intensity of the change of the scattered light with respect to the change of the incident angle, as compared to those for foreign matter adhered to the wafer surface, towards the fine concave surface It is large. そこで、入射角を大きくしていくことにより、つまり入射角を検査面に対して近付けていくことにより、異物からの散乱光が変化しないように感度を調整していくと、凹部からの散乱光は弱くなっていく。 Therefore, by gradually increasing the angle of incidence, that is by going close the inspection surface angle of incidence, the scattered light from a particle is gradually adjust the sensitivity so as not to be changed, the scattered light from the recess go weakened. このようなことが実験で確認された。 Such a thing has been confirmed by experiment.

【0018】従って、入射角を変えて散乱光強度の差を調べると、つまり入射角が変わった時の信号の変化の大きさを調べると、その散乱物体が異物であるか凹部であるかの区別がつく。 [0018] Thus, by examining the difference in the scattered light intensity by changing the incident angle, i.e. examining the magnitude of the change in signal when the incident angle is changed, if the scattering object is a concave portion or a foreign object distinction arrive.

【0019】このような知見に基いて、本発明においては、2つの異なる波長の光を、異なる入射角で、同一点に集光し、集光点からの散乱光を2波長別々に光電変換し、各々の信号の強度差を利用して、ウェーハ表面上の異物や傷と、ウェーハ表面に存在する点状の凹部とを区別するのである。 [0019] Based on this finding, in the present invention, light of two different wavelengths, at different angles of incidence, focused to the same point, the scattered light from the focal point 2 wavelengths separately photoelectric conversion and, by utilizing the strength difference between the respective signals, and the foreign matter or scratches on the wafer surface and to distinguish between point-shaped recess present on the wafer surface.

【0020】たとえば、本発明によれば、異なる波長の2つの光源と、それら2つのの光源からの光をウェーハ表面に集光する際に、2つの波長の光を異なる入射角でウェーハ表面の同一点に集光するように構成された光学系と,集光点をウェーハ表面の所定域にわたって走査するための走査手段と、集光点からの散乱光を受光する際に、2つの波長を別々に受光するように構成されている2つの光電変換器と、2つの光電変換器からの信号を検出する信号検出器と、信号検出器からの出力を利用して、ウェーハ表面上の異物や傷等と、ウェーハ表面に存在する点状の凹部とを区別する弁別回路を設ける。 [0020] For example, according to the present invention, different from the two light sources of wavelengths, when condensing the light on the wafer surface from their 2 horns of light sources, the wafer surface with light of two wavelengths at different angles of incidence an optical system configured to focused on the same point, and scanning means for scanning the focal point over a predetermined area of ​​the wafer surface, when receiving scattered light from the focal point, the two wavelengths and two photoelectric converter is configured to separate light, and a signal detector for detecting signals from two photoelectric converter using the output from the signal detector, the foreign matter on the wafer surface Ya and wounds, provided that distinguish discrimination circuit and a point-like recesses present on the wafer surface.

【0021】 [0021]

【実施例】図2は、本発明の1実施例を示す。 DETAILED DESCRIPTION FIG. 2 shows an embodiment of the present invention. これは、 this is,
従来のウェーハ表面検査装置を改良した例である。 It is an example obtained by improving the conventional wafer surface inspection device.

【0022】図2に示すように、本発明によるウェーハ表面検査装置においては、異なる波長の2つの光源2 As shown in FIG. 2, the wafer surface inspection device according to the invention, the two different-wavelength light source 2
1,22と、それら2つのの光源21,22からの光をウェーハ23の表面に集光する際に、2つの波長の光を異なる入射角でウェーハ23の表面の同一点に集光するように構成された光学系24,25と,集光点26をウェーハ23の表面の所定領域(たとえば全領域)にわたって走査するための走査手段(図示せず)と、集光点2 And 1, 22, when condensing the light from these two horns of light sources 21, 22 on the surface of the wafer 23, so as to condense the same point of the surface of the wafer 23 with light of two wavelengths at different angles of incidence and an optical system 24, 25 configured, scanning means for scanning the focal point 26 over a predetermined region of the surface of the wafer 23 (e.g., entire area) (not shown), the focusing point 2
6からの散乱光を受光する際に、2つの波長を別々に受光するように構成されている2つの光電変換器27,2 When receiving scattered light from the 6, two photoelectric converters two wavelengths is configured to receive separately 27,2
8と、2つの光電変換器27,28からの信号を検出する信号検出器29と、信号検出器29からの出力を利用して、ウェーハ表面上の異物や傷等と、ウェーハ表面に存在する点状の凹部とを区別する弁別回路30が設けられている。 8, a signal detector 29 for detecting signals from the two photoelectric converters 27 and 28, using the output from the signal detector 29, a foreign matter or scratches on the wafer surface, present on the wafer surface the point-like recess distinguish discrimination circuit 30 is provided.

【0023】光源21,22はレーザが用いられている。 The light source 21 and 22 the laser is used. 光源21,22を出た光は、別々の光学系24,2 Light exiting the light source 21 and 22, separate optics 24,2
5によってウェーハ23の表面に集光される。 5 by being focused on the surface of the wafer 23. これら2 These 2
つの光源21,22を出た光は、同一時刻にかつ同一の点で測定するためにウェーハ23の表面に集光される。 The light exiting the One light source 21, is focused on the surface of the wafer 23 to measure the same point and at the same time.
しかも、比較的接近した異なる2つの波長(例えば、4 Moreover, relatively closely spaced two different wavelengths (for example, 4
88nmと514.5nm)の照明光を用いて、2つの異なる入射角(例えば、20度と70度)でウェーハ2 Using illumination light of 88nm and 514.5 nm), the wafer 2 at two different incidence angles (e.g., 20 degrees and 70 degrees)
3を照明するように構成する。 3 configured to illuminate the. そして、2つの光電変換器27,28は、それらの比較的接近した異なる2つの波長の散乱光を入射面に対し同じ方位・角皮で受光し、 Then, two photoelectric converters 27 and 28, received with respect to the incident surface of their relatively close in two different scattered light wavelength in the same orientation, cuticle,
信号を出力する。 And it outputs the signal. 信号検出器29は、2つの光電変換器27,28からの信号を検出し、弁別回路30は、その信号検出器29からの出力信号を利用して、ウェーハ表面上の異物や傷等と、ウェーハ表面に存在する点状の凹部とを区別する。 Signal detector 29 detects the signals from the two photoelectric converters 27 and 28, discriminator 30, and using the output signal from the signal detector 29, foreign matter or scratches on the wafer surface and the like, distinguish between point-shaped recess present on the wafer surface.

【0024】図3は、同じ散乱光強度レベルの異物から出力される信号と凹部から出力される信号の例を対比して示す。 [0024] Figure 3 shows in comparison an example of a signal output from the signal and a recess which is output from the same scattered light intensity level of the foreign matter.

【0025】ウェーハ表面の点状の凹部と異物との区別は、次のようにして行う。 The distinction between point-like recess and the foreign matter on the wafer surface is performed as follows. すなわち、2つの光電変換器27,28の方位・角度を固定し、入射角の変化に対する散乱光の強さの変化を検出する。 That is, the azimuth-angle of the two photoelectric converters 27 and 28 is fixed, to detect the intensity change of the scattered light with respect to change of the incident angle. ウェーハ表面に付着した異物に対する散乱光の強さの変化を検出するとともに、ウェーハ表面の微小な凹部に対する散乱光の強さの変化を検出する。 It detects the intensity change of the scattered light with respect to foreign matter attached to the wafer surface to detect the intensity change of the scattered light with respect to the minute recesses of the wafer surface. 両者を比べると、図3に示されているように、入射角が小さいときは、両者の信号は比較的大きく、両者の区別は困難であるが、入射角が大きいときは、異物の信号は比較的大きいのに対し、凹部の信号は比較的小さく、両者の区別は容易である。 Comparing the two, as shown in FIG. 3, when the incident angle is small, both of the signal is relatively large, but both distinction is difficult, when a large angle of incidence, the signal of foreign matter whereas relatively large, the signal of the recess is relatively small, both distinction is easy.

【0026】このように入射角を変えて散乱光強度の差、つまり入射角が変わった時の信号の変化の大きさを比較すると、その散乱物体が異物であるか凹部であるかの区別がつくのである。 The difference in scattered light intensity by changing the incident angle in this way, i.e. when comparing the magnitude of the change in signal when the incident angle is changed, the distinction between whether the scattering object is a concave portion or a foreign object it is to arrive.

【0027】なお、点状の凹部と、凹部形状の傷とを区別できなくなる可能性があるが、傷は一般に異物や点状の凹部に比べて大きく(長く)、信号が孤立して存在するかどうか(隣り合う複数の走査線にも存在するかどうか)を調べることにより、区別するようにする。 [0027] Incidentally, the point-like recess, but it may become impossible distinguish between wounds concave shape, scratches are generally larger than the foreign matter and the point-like recess (long), the signal exists in isolation or by examining how the (whether or not to present a plurality of scan lines adjacent), so as to distinguish.

【0028】前述の実施例では、同一の入射面内で、異なる入射角となるようにしたが、入射面に対し同じ方位・角度で受光すると言う条件を満たせば入射面は別々でもよい。 [0028] In the above embodiment, in the same incident plane has been set to be different incident angles, the incident surface satisfies the condition called received at the same azimuth-angle to the plane of incidence may be separate.

【0029】また、前述の実施例では、ウェーハの回転と並進機構を用いた螺旋走査と呼ばれる走査方式を採用しているが、本発明は、これに限らず、レーザビームをX−Y2次元に走査する等の方法及び装置にも適用できる。 Further, in the illustrated embodiment adopts the scan method called helical scan using a rotating and translation mechanism of the wafer, the present invention is not limited thereto, the laser beam to X-Y2-dimensional It can be applied to a method and apparatus such as a scanning.

【0030】また、入射角を大きくすると、凹部からの散乱光が小さくなるから、凹部からの散乱光が検出されないという点に着目すれば、1波長だけを用いて、入射角を大きくし、信号検出回路を工夫すれば、ウェーハ表面上の異物や傷等と、ウェーハ表面に存在する点状の凹部とを区別することが可能となるが、その場合、異物のサイズが非常に小さくなると、小さな信号も検出する必要が生じる。 Further, the larger the incident angle, since the scattered light from the concave portion is small, focusing on the point that the scattered light from the concave portion is not detected, by using only one wavelength, by increasing the angle of incidence, the signal If devising the detection circuit, and the foreign matter or scratches on the wafer surface and the like, although it is possible to distinguish between point-shaped recess present on the wafer surface, in which case, the size of the foreign matter is very small, small signal also need to be detected occur. そうすると、凹部からの信号を検出するようになってしまう。 Then, it becomes possible to detect a signal from the recess. これに対し、本発明のように信号強度を比較するように構成すると、異物のサイズが非常に小さくなっても、異物と凹部の区別が出来る。 In contrast, when configured to compare the signal strength as in the present invention, also the size of the foreign matter is very small, it can distinguish between foreign substances and the recess.

【0031】 [0031]

【発明の効果】本発明による、半導体基板その他のウェーハ表面検出装置は、半導体集積回路を作る際に問題とならない微小な凹部を除いて、ウェーハ表面に付着した異物や傷を、ウェーハ表面に存在する点状の凹部と区別して検出できる。 According the present invention, a semiconductor substrate other wafer surface detecting device, with the exception of the small recesses does not become a problem in making the semiconductor integrated circuit, the foreign substances or scratch adhering to the wafer surface, present on the wafer surface point-like recess to be detected separately. その結果、材料であるウェーハの無駄を省く事ができる。 As a result, it is possible to eliminate the waste of the wafer, which is the material.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】従米のウェーハ表面検査装置の概略構成図。 1 is a schematic diagram of a wafer surface inspection apparatus 従米.

【図2】本発明による好適な実施例を示す概略構成図。 Schematic block diagram showing a preferred embodiment according to the invention, FIG.

【図3】本発明による、異物と凹部を弁別するのに用いる信号の一例を示す模式図。 According to the present invention; FIG, schematic diagram showing an example of a signal used to discriminate foreign matter and recesses.

【符号の説明】 DESCRIPTION OF SYMBOLS

10 光源 11 光学系 12 ウェーハ 13 集光点 14 レンズ 15 光電変換器 16 モータ 17 信号検出回路 21,22 光源 23 ウェーハ 24,25 光学系 26 集光点 27,28 光電変換器 29 信号検出器 30 弁別回路 10 light source 11 optical system 12 wafer 13 condensing point 14 lens 15 photoelectric converter 16 motor 17 signal detecting circuit 21, 22 a light source 23 wafers 24,25 optics 26 focusing point 27, 28 photoelectric converters 29 signal detector 30 discriminates circuit

───────────────────────────────────────────────────── フロントページの続き (72)発明者 岩 陽一郎 東京都板橋区蓮沼町75番1号 株式会社ト プコン内 ────────────────────────────────────────────────── ─── of the front page continued (72) inventor rock Yoichiro Itabashi-ku, Tokyo Hasunuma-cho, 75th No. 1 Co., Ltd. door in Pucon

Claims (4)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 光源からの光をウェーハ表面に集光し、 1. A light from a light source is focused on the wafer surface,
    集光点を走査しながら、集光点からの散乱光を光電変換器で受光し、光電変換器からの信号を検出することにより、ウェーハ表面上の異物や傷を検査するウェーハ表面検査方法において、 2つの異なる波長の光を、異なる入射角で、同一点に集光し、集光点からの散乱光を2波長別々に光電変換し、 While scanning the focal point, and receiving scattered light from the focal point by a photoelectric converter, by detecting a signal from the photoelectric converter, the wafer surface inspection method for inspecting a foreign matter or scratches on the wafer surface , light of two different wavelengths, different angles of incidence, focused to the same point, the scattered light from the condensing point 2 wavelengths separately performs photoelectric conversion,
    各々の信号の強度差を利用して、ウェーハ表面上の異物や傷と、ウェーハ表面に存在する点状の凹部とを区別する事を特徴とするウェーハ表面検査方法。 By utilizing the strength difference between the respective signals, and the foreign matter or scratches on the wafer surface, wafer surface inspection method comprising distinguishing between a point-shaped recesses present on the wafer surface.
  2. 【請求項2】 2つの異なる波長の散乱光を受光する際に、その受光位置が、各波長の照明光の入射面に対して、同じ相対位置関係になるようにした請求項1に記載のウェーハ表面検査方法。 When receiving the wherein the two different wavelengths scattered light, the light receiving position, with respect to the plane of incidence of the illumination light of each wavelength, according to claim 1 which is to be the same relative positions the wafer surface inspection method.
  3. 【請求項3】 光源と、その光源からの光をウェーハ表面に集光する光学系と,集光点をウェーハ表面の所定域にわたって走査するための走査手段と、集光点からの散乱光を受光する光電変換器を備えた受光部と、受光部からの信号を検出する信号検出器とを有するウェーハ表面検査装置において、 前記光源は2つの異なる波長の光源であり,前記光学系は2つの波長の光を異なる入射角でウェーハ表面の同一点に集光するように構成され、さらに、前記受光部は2 3. A light source, an optical system for condensing light from the light source to the wafer surface, and scanning means for scanning the focal point over a predetermined area of ​​the wafer surface, the scattered light from the condensing point a light receiving unit having a photoelectric converter for receiving, in the wafer surface inspection device and a signal detector for detecting signals from the light receiving portion, the light source is a light source of the two different wavelengths, the optical system is two It is configured to focused on the same point of the wafer surface with light of a wavelength different incident angles, further, the light receiving section 2
    つの波長を別々に受光するように構成されていて、信号検出器からの出力を利用して、ウェーハ表面上の異物や傷等と、ウェーハ表面に存在する点状の凹部とを区別する弁別回路を設けた事を特徴とするウェーハ表面検査装置。 One of the wavelengths is configured to receive separately, signal by utilizing the output from the detector, and the foreign matter or scratches on the wafer surface, distinguish discrimination circuit and a point-like recesses present on the wafer surface wafer surface inspection device, characterized in that the provided.
  4. 【請求項4】 2つの異なる波長の散乱光を受光する受光部を、各波長の照明光の入射面に対して、同じ相対位置関係になるように配置した請求項3に記載のウェーハ表面検査装置。 The 4. A light receiving section for receiving scattered light of two different wavelengths, to the plane of incidence of the illumination light of each wavelength, the wafer surface inspection according to claim 3, arranged to run in the same relative positions apparatus.
JP32393997A 1997-11-11 1997-11-11 Wafer surface inspecting method and equipment therefor Pending JPH11142127A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32393997A JPH11142127A (en) 1997-11-11 1997-11-11 Wafer surface inspecting method and equipment therefor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP32393997A JPH11142127A (en) 1997-11-11 1997-11-11 Wafer surface inspecting method and equipment therefor
US09/184,075 US6104481A (en) 1997-11-11 1998-11-02 Surface inspection apparatus

Publications (1)

Publication Number Publication Date
JPH11142127A true JPH11142127A (en) 1999-05-28

Family

ID=18160324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32393997A Pending JPH11142127A (en) 1997-11-11 1997-11-11 Wafer surface inspecting method and equipment therefor

Country Status (1)

Country Link
JP (1) JPH11142127A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001235429A (en) * 2000-02-24 2001-08-31 Topcon Corp Surface inspection instrument
JP2005003447A (en) * 2003-06-10 2005-01-06 Topcon Corp Method and apparatus for inspecting surface
US7187438B2 (en) * 2001-03-01 2007-03-06 Hitachi, Ltd. Apparatus and method for inspecting defects
JP2007511739A (en) * 2003-09-04 2007-05-10 ケーエルエー・テンコール・テクノロジーズ・コーポレーション Method and system for inspection of the specimen using different test parameters
US7242016B2 (en) 2000-03-08 2007-07-10 Hitachi, Ltd. Surface inspection apparatus and method thereof
JP2007212479A (en) * 2007-05-07 2007-08-23 Hitachi High-Technologies Corp System and method for defect inspection
JP2008058331A (en) * 2000-06-14 2008-03-13 Qc Optics Inc Highly sensitive optical inspection system and method for detecting defect on diffraction surface
JP2008268141A (en) * 2007-04-25 2008-11-06 Hitachi High-Technologies Corp Defect inspection device and its method
JP4643785B2 (en) * 2000-02-24 2011-03-02 株式会社トプコン Surface inspection apparatus
JP2013130450A (en) * 2011-12-21 2013-07-04 Seiko Epson Corp Image processing method

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001235429A (en) * 2000-02-24 2001-08-31 Topcon Corp Surface inspection instrument
JP4644329B2 (en) * 2000-02-24 2011-03-02 株式会社トプコン Surface inspection apparatus
JP4643785B2 (en) * 2000-02-24 2011-03-02 株式会社トプコン Surface inspection apparatus
US8729514B2 (en) 2000-03-08 2014-05-20 Hitachi High-Technologies Corporaation Surface inspection apparatus and method thereof
US7952085B2 (en) 2000-03-08 2011-05-31 Hitachi, Ltd. Surface inspection apparatus and method thereof
US7242016B2 (en) 2000-03-08 2007-07-10 Hitachi, Ltd. Surface inspection apparatus and method thereof
US7417244B2 (en) 2000-03-08 2008-08-26 Hitachi, Ltd. Surface inspection apparatus and method thereof
US9551670B2 (en) 2000-03-08 2017-01-24 Hitachi, Ltd. Surface inspection apparatus and method thereof
JP2008058331A (en) * 2000-06-14 2008-03-13 Qc Optics Inc Highly sensitive optical inspection system and method for detecting defect on diffraction surface
US7315366B2 (en) 2001-03-01 2008-01-01 Hitachi High-Technologies Corporation Apparatus and method for inspecting defects
US7187438B2 (en) * 2001-03-01 2007-03-06 Hitachi, Ltd. Apparatus and method for inspecting defects
US7511806B2 (en) 2001-03-01 2009-03-31 Hitachi High-Tech Electronics Engineering Co., Ltd. Apparatus and method for inspecting defects
JP2005003447A (en) * 2003-06-10 2005-01-06 Topcon Corp Method and apparatus for inspecting surface
JP2007511739A (en) * 2003-09-04 2007-05-10 ケーエルエー・テンコール・テクノロジーズ・コーポレーション Method and system for inspection of the specimen using different test parameters
JP2008268141A (en) * 2007-04-25 2008-11-06 Hitachi High-Technologies Corp Defect inspection device and its method
JP2007212479A (en) * 2007-05-07 2007-08-23 Hitachi High-Technologies Corp System and method for defect inspection
JP2013130450A (en) * 2011-12-21 2013-07-04 Seiko Epson Corp Image processing method

Similar Documents

Publication Publication Date Title
US6608676B1 (en) System for detecting anomalies and/or features of a surface
US6862096B2 (en) Defect detection system
US6891611B1 (en) Sample inspection system
JP6231156B2 (en) System and method for detecting defects on the wafer
US20080225298A1 (en) High throughput brightfield/darkfield water inspection system using advanced optical techniques
US7068363B2 (en) Systems for inspection of patterned or unpatterned wafers and other specimen
US6810139B2 (en) Pixel based machine for patterned wafers
US6449037B2 (en) Method of and device for detecting micro-scratches
US6400454B1 (en) Apparatus and method for inspector defects
KR100261387B1 (en) Method and equipment for inspecting foreign substance
US4342515A (en) Method of inspecting the surface of an object and apparatus therefor
KR100190312B1 (en) Foreign substance inspection apparatus
JP4789438B2 (en) Method and apparatus for determining the surface layer thickness using a continuous multi-wavelength surface scan
JP3967935B2 (en) Precision measuring apparatus and method combined
US7746453B2 (en) Pattern defect inspection apparatus and method
JP6010042B2 (en) Wafer inspection
US7916287B2 (en) Surface inspection method and surface inspection apparatus
JP2796316B2 (en) Inspection method and apparatus of the defect or foreign matter
US8384887B2 (en) Methods and systems for inspection of a specimen using different inspection parameters
US4898471A (en) Particle detection on patterned wafers and the like
WO1996012939A1 (en) Defect detection in patterned substrates using optical computing
JP4825423B2 (en) Dark field inspection system having a programmable light selection array
GB2119506A (en) Inspecting photomasks for dust
JP2005321237A (en) Pattern inspection method and pattern inspection device
US7280233B2 (en) Method and apparatus for inspecting an edge exposure area of a wafer

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20041105

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060623

A131 Notification of reasons for refusal

Effective date: 20060704

Free format text: JAPANESE INTERMEDIATE CODE: A131

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060829

A521 Written amendment

Effective date: 20060921

Free format text: JAPANESE INTERMEDIATE CODE: A523

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20061024

A521 Written amendment

Effective date: 20061207

Free format text: JAPANESE INTERMEDIATE CODE: A523

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20070213