JPH11142127A - Wafer surface inspecting method and equipment therefor - Google Patents

Wafer surface inspecting method and equipment therefor

Info

Publication number
JPH11142127A
JPH11142127A JP32393997A JP32393997A JPH11142127A JP H11142127 A JPH11142127 A JP H11142127A JP 32393997 A JP32393997 A JP 32393997A JP 32393997 A JP32393997 A JP 32393997A JP H11142127 A JPH11142127 A JP H11142127A
Authority
JP
Japan
Prior art keywords
light
wafer surface
wafer
point
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP32393997A
Other languages
Japanese (ja)
Inventor
Toshikazu Yoshino
寿和 芳野
Akihiko Sekine
明彦 関根
Hiroaki Soma
浩明 相馬
Yoichiro Iwa
陽一郎 岩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Topcon Corp
Original Assignee
Topcon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Topcon Corp filed Critical Topcon Corp
Priority to JP32393997A priority Critical patent/JPH11142127A/en
Priority to US09/184,075 priority patent/US6104481A/en
Publication of JPH11142127A publication Critical patent/JPH11142127A/en
Pending legal-status Critical Current

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  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)

Abstract

PROBLEM TO BE SOLVED: To distinguish a foreign matter and a crack on a wafer surface from a dot type recessed part existing on the surface, by independently photoelectrically converting two wavelengths of scattered lights from a light convergence point, and using the difference of intensities of the respective signals. SOLUTION: By detecting the difference in the intensities of scattered lights when the incident angles are changed, i.e., by detecting the magnitude of change of signals when the incident angles are changed, whether a scattering object is a foreign matter or a recessed part can be distinguished. Laser lights outputted from light sources 21, 22 are converged on the surface of a wafer with independent optical systems 24, 25. The lights outputted from the two light sources 21, 22 are converged on the surface of the wafer, in order to be measured at the same time at the same point. Two illuminating lights which have comparatively nearby different wavelengths are used, and the wafer is illuminated with two different incident angles. Two photoelectric converters 27, 28 receive the two scattered lights of comparatively nearby two different wavelengths at the same azimuth and angle to an incident surface, and output signals. A discriminating circuit 30 discriminates the foreign matter from a dot type recessed part by using the signals.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は,広くは各種物体の
ウェーハの表面検査方法及び装置に関し、詳しくは半導
体ウェーハの表面の異物や傷等を検査するウェーハ表面
検査方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates generally to a method and an apparatus for inspecting a wafer surface of various objects, and more particularly to a wafer surface inspection method for inspecting foreign matters and scratches on the surface of a semiconductor wafer.

【0002】[0002]

【従来の技術】一般に、半導体集積回路は、半導体基板
のウェーハにフォトリソグラフィー工程で回路を形成す
ることにより製造される。この際、1枚のウェーハの表
面には、多数の同一の集積回路が作られ、最後にそれら
を切り離して単独の集積回路チッブとする。
2. Description of the Related Art Generally, a semiconductor integrated circuit is manufactured by forming a circuit on a wafer of a semiconductor substrate by a photolithography process. At this time, a large number of identical integrated circuits are formed on the surface of one wafer, and are finally cut off to form a single integrated circuit chip.

【0003】ウェーハの表面に異物やキズが存在する
と、その部分に形成される回路パターンに欠陥が生じ、
その集積回路は使用不能になる。その結果、1枚のウェ
ーハから取れる集積回路の数が減り、歩留まり低下を招
く。
[0003] If foreign matter or scratches exist on the surface of the wafer, a defect occurs in a circuit pattern formed in that portion,
The integrated circuit becomes unusable. As a result, the number of integrated circuits that can be obtained from one wafer is reduced, and the yield is reduced.

【0004】そこで、リソグラフィー工程に入る前に、
半導体集積回路の材料となるウェーハを検査して、異物
が存在しない事を確認している。
Therefore, before entering the lithography process,
Inspection of a wafer as a material of a semiconductor integrated circuit has confirmed that no foreign matter exists.

【0005】この検査の方法としては、ウェーハ表面に
レーザ光を集光し、その集光点からの散乱光を受光し
て、その受光信号に基いて異物等を検出する方法が一般
的である。
[0005] As a method of this inspection, a method is generally used in which a laser beam is focused on the wafer surface, scattered light from the focused point is received, and a foreign substance or the like is detected based on the received light signal. .

【0006】図1は、従来のウェーハ表面検査装置を示
す。光源10にはレーザが用いられている。光源10を
出た光は、光学系11によって入射角約20度でウェー
ハ12の表面に集光される。集光点13からの散乱光は
レンズ14によって光電変換器15に受光される。ウェ
ーハ12はモータ16によって回転され、それと同時に
並進機構(図示せず)によって移動され、結果的に集光
点13がウェーハ12の全面を走査するようになってい
る。
FIG. 1 shows a conventional wafer surface inspection apparatus. The light source 10 uses a laser. Light emitted from the light source 10 is condensed on the surface of the wafer 12 by the optical system 11 at an incident angle of about 20 degrees. The scattered light from the focal point 13 is received by the photoelectric converter 15 by the lens 14. The wafer 12 is rotated by a motor 16 and simultaneously moved by a translation mechanism (not shown) so that the focal point 13 scans the entire surface of the wafer 12.

【0007】散乱光を受光する光電変換器15は、集光
点13が異物等を横切る際に散乱光の強度に応じたパル
ス状の信号を出力する。それゆえ、このパルス状の信号
を信号検出回路17で検出し、その信号出力の大きさに
よって、散乱物体つまり異物の存在と大きさを判断する
ようになっている。
[0007] The photoelectric converter 15 for receiving the scattered light outputs a pulse-like signal corresponding to the intensity of the scattered light when the converging point 13 crosses a foreign substance or the like. Therefore, the pulse-like signal is detected by the signal detection circuit 17, and the presence and size of a scattering object, that is, a foreign substance, is determined based on the magnitude of the signal output.

【0008】一方、集積回路の集積度の増加が回路パタ
ーンの微細化を進め、それによって検査すべき異物の大
きさも微細化し、それとともに検査装置の感度が向上し
てきている。
On the other hand, the increase in the degree of integration of integrated circuits has promoted the miniaturization of circuit patterns, thereby miniaturizing the size of foreign substances to be inspected and, at the same time, improving the sensitivity of inspection apparatuses.

【0009】このような背景の下で、この検査によって
異物と検出されたものの中に、回路パターンを作製する
際に障害とならない程度の微小な点状の凹部が誤認によ
って含まれている事が近年判ってきた。
Against this background, some of the foreign matter detected by this inspection may include a small point-like concave portion that does not hinder the production of a circuit pattern. In recent years it has been known.

【0010】つまり、集積回路製造上問題とならない凹
部が異物と誤認されるため、使用可能なウェーハが不良
と判定されてしまうことがあった。この凹部は、当然再
洗浄によっても取り除けないから、結局使えないウェー
ハと判定され、無駄になっていた。このことは、今後、
ウェーハの大型化に伴って、無駄が大きくなっていく事
を意味している。
That is, since a concave portion which does not cause a problem in manufacturing an integrated circuit is erroneously recognized as a foreign substance, a usable wafer may be determined to be defective. Since the recess cannot be removed by re-cleaning, it is determined that the wafer is unusable and wasted. This will be
This means that as the size of the wafer increases, the waste increases.

【0011】[0011]

【発明が解決しようとする課題】本発明の目的は、半導
体基板その他のウェーハの表面検査の際に、ウェーハ表
面上の異物や傷と、ウェーハ表面に存在する点状の凹部
とを区別して検出できる検査方法及び装置を提供する事
である。
SUMMARY OF THE INVENTION An object of the present invention is to detect a foreign substance or a scratch on a wafer surface and a point-like concave portion present on the wafer surface in the inspection of the surface of a semiconductor substrate or other wafers. It is an object of the present invention to provide an inspection method and apparatus which can perform the inspection.

【0012】[0012]

【課題を解決するための手段】このような課題は、特許
請求の範囲の各請求項に記載したウェーハ表面検査方法
及び装置によって解決される。
This problem is solved by a wafer surface inspection method and apparatus described in the claims.

【0013】たとえば、本発明の解決手段の1つは、光
源からの光をウェーハ表面に集光し、集光点を走査しな
がら、集光点からの散乱光を光電変換器で受光し、光電
変換器からの信号を検出することにより、ウェーハ表面
上の異物や傷を検査するウェーハ表面検査方法におい
て、2つの異なる波長の光を、異なる入射角で、同一点
に集光し、集光点からの散乱光を2波長別々に光電変換
し、各々の信号の強度差を利用して、ウェーハ表面上の
異物や傷と、ウェーハ表面に存在する点状の凹部とを区
別する事を特徴とするウェーハ表面検査方法である。
For example, one of the solutions of the present invention is to condense light from a light source on a wafer surface, scan a light converging point, receive scattered light from the light converging point by a photoelectric converter, In a wafer surface inspection method for detecting foreign matter and scratches on a wafer surface by detecting a signal from a photoelectric converter, two different wavelengths of light are collected at the same point at different angles of incidence and collected. It is characterized in that scattered light from a point is photoelectrically converted into two wavelengths separately, and the difference in the intensity of each signal is used to distinguish foreign matter or scratches on the wafer surface from dot-like recesses on the wafer surface. Wafer surface inspection method.

【0014】また、本発明の別の解決手段は、光源と、
その光源からの光をウェーハ表面に集光する光学系と,
集光点をウェーハ表面の所定域にわたって走査するため
の走査手段と、集光点からの散乱光を受光する光電変換
器を備えた受光部と、受光部からの信号を検出する信号
検出器とを有するウェーハ表面検査装置において、前記
光源は2つの異なる波長の光源であり,前記光学系は2
つの波長の光を異なる入射角でウェーハ表面の同一点に
集光するように構成され、さらに、前記受光部は2つの
波長を別々に受光するように構成されていて、信号検出
器からの出力を利用して、ウェーハ表面上の異物や傷等
と、ウェーハ表面に存在する点状の凹部とを区別する弁
別回路を設けた事を特徴とするウェーハ表面検査装置で
ある。
Another solution of the present invention is to provide a light source,
An optical system that focuses light from the light source on the wafer surface,
Scanning means for scanning the focal point over a predetermined area of the wafer surface, a light receiving section having a photoelectric converter for receiving scattered light from the focal point, and a signal detector for detecting a signal from the light receiving section Wherein the light source is a light source of two different wavelengths and the optical system is
Light of two wavelengths is condensed at the same point on the wafer surface at different angles of incidence, and the light receiving unit is configured to separately receive the two wavelengths, and the output from the signal detector is And a discrimination circuit for discriminating a foreign substance or a scratch on the wafer surface from a point-like concave portion existing on the wafer surface by utilizing the method.

【0015】[0015]

【発明の実施の形態】本発明は、種々の技術分野で利用
されているウェーハ、たとえば半導体基板その他のウェ
ーハの表面を検査するウェーハ表面検査方法及び装置を
提供するものである。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention provides a wafer surface inspection method and apparatus for inspecting the surface of a wafer, for example, a semiconductor substrate or other wafers used in various technical fields.

【0016】ウェーハ表面に付着した異物等やウェーハ
表面に形成された傷等から反射した散乱光の強さは、光
源からの光の波長と異物や傷の大きさの関係で変わり、
また入射角と受光する方位・角度によって変化する事が
判っている。つまり、散乱光の強さは、光の波長と、異
物等の大きさと、光の入射角と、受光する方位・角度に
依存して変化するのである。
The intensity of scattered light reflected from a foreign substance or the like attached to the wafer surface or a scratch or the like formed on the wafer surface changes depending on the relationship between the wavelength of the light from the light source and the size of the foreign substance or flaw.
Further, it is known that it changes depending on the incident angle and the azimuth / angle at which light is received. That is, the intensity of the scattered light changes depending on the wavelength of the light, the size of the foreign matter, the incident angle of the light, and the azimuth / angle at which the light is received.

【0017】たとえば、前述したようにウェーハ表面の
点状の凹部は異物と誤認されることがあるが、それは、
可視域の波長よりもかなり小さい、異物と同等の散乱光
を生じる領域において発生する事である。このような領
域では、受光部の方位・角度を固定した時、入射角の変
化に対する散乱光の強さの変化は、ウェーハ表面に付着
した異物に対するものと比べて、表面の微小な凹部の方
が大きい。そこで、入射角を大きくしていくことによ
り、つまり入射角を検査面に対して近付けていくことに
より、異物からの散乱光が変化しないように感度を調整
していくと、凹部からの散乱光は弱くなっていく。この
ようなことが実験で確認された。
For example, as described above, a point-like concave portion on the wafer surface may be mistaken for a foreign substance.
This occurs in a region that is considerably smaller than the wavelength in the visible region and generates scattered light equivalent to that of a foreign substance. In such a region, when the azimuth and angle of the light receiving unit are fixed, the change in the intensity of the scattered light with respect to the change in the incident angle is smaller in the minute concave portions of the surface than in the case of the foreign matter attached to the wafer surface. Is big. Therefore, by increasing the incident angle, that is, by making the incident angle closer to the inspection surface, and adjusting the sensitivity so that the scattered light from the foreign matter does not change, the scattered light from the concave portion is obtained. Is getting weaker. This was confirmed by experiments.

【0018】従って、入射角を変えて散乱光強度の差を
調べると、つまり入射角が変わった時の信号の変化の大
きさを調べると、その散乱物体が異物であるか凹部であ
るかの区別がつく。
Therefore, when the difference in the scattered light intensity is examined by changing the incident angle, that is, when the magnitude of the signal change when the incident angle is changed is examined, it is determined whether the scattered object is a foreign substance or a concave part. I can distinguish them.

【0019】このような知見に基いて、本発明において
は、2つの異なる波長の光を、異なる入射角で、同一点
に集光し、集光点からの散乱光を2波長別々に光電変換
し、各々の信号の強度差を利用して、ウェーハ表面上の
異物や傷と、ウェーハ表面に存在する点状の凹部とを区
別するのである。
Based on such knowledge, in the present invention, two different wavelengths of light are condensed at the same point at different angles of incidence, and the scattered light from the converging point is separately converted into two wavelengths by photoelectric conversion. Then, using the difference in the intensity of each signal, a foreign substance or a scratch on the wafer surface is distinguished from a point-like concave portion present on the wafer surface.

【0020】たとえば、本発明によれば、異なる波長の
2つの光源と、それら2つのの光源からの光をウェーハ
表面に集光する際に、2つの波長の光を異なる入射角で
ウェーハ表面の同一点に集光するように構成された光学
系と,集光点をウェーハ表面の所定域にわたって走査す
るための走査手段と、集光点からの散乱光を受光する際
に、2つの波長を別々に受光するように構成されている
2つの光電変換器と、2つの光電変換器からの信号を検
出する信号検出器と、信号検出器からの出力を利用し
て、ウェーハ表面上の異物や傷等と、ウェーハ表面に存
在する点状の凹部とを区別する弁別回路を設ける。
For example, according to the present invention, when two light sources having different wavelengths and light from the two light sources are condensed on the wafer surface, the light having the two wavelengths is incident on the wafer surface at different incident angles. An optical system configured to focus light at the same point, scanning means for scanning the focus point over a predetermined area of the wafer surface, and two wavelengths for receiving scattered light from the focus point. Two photoelectric converters that are configured to receive light separately, a signal detector that detects signals from the two photoelectric converters, and the use of an output from the signal detector to detect a foreign substance or the like on the wafer surface. A discriminating circuit is provided for discriminating a flaw or the like from a dot-shaped recess present on the wafer surface.

【0021】[0021]

【実施例】図2は、本発明の1実施例を示す。これは、
従来のウェーハ表面検査装置を改良した例である。
FIG. 2 shows an embodiment of the present invention. this is,
This is an example in which a conventional wafer surface inspection device is improved.

【0022】図2に示すように、本発明によるウェーハ
表面検査装置においては、異なる波長の2つの光源2
1,22と、それら2つのの光源21,22からの光を
ウェーハ23の表面に集光する際に、2つの波長の光を
異なる入射角でウェーハ23の表面の同一点に集光する
ように構成された光学系24,25と,集光点26をウ
ェーハ23の表面の所定領域(たとえば全領域)にわた
って走査するための走査手段(図示せず)と、集光点2
6からの散乱光を受光する際に、2つの波長を別々に受
光するように構成されている2つの光電変換器27,2
8と、2つの光電変換器27,28からの信号を検出す
る信号検出器29と、信号検出器29からの出力を利用
して、ウェーハ表面上の異物や傷等と、ウェーハ表面に
存在する点状の凹部とを区別する弁別回路30が設けら
れている。
As shown in FIG. 2, in the wafer surface inspection apparatus according to the present invention, two light sources 2 having different wavelengths are used.
When the light from the two light sources 21 and 22 and the light from the two light sources 21 and 22 are collected on the surface of the wafer 23, the light of the two wavelengths is collected at the same point on the surface of the wafer 23 at different incident angles. , A scanning unit (not shown) for scanning the focal point 26 over a predetermined area (for example, the entire area) of the surface of the wafer 23, and a focal point 2
The two photoelectric converters 27 and 2 configured to separately receive two wavelengths when receiving the scattered light from
8, a signal detector 29 for detecting signals from the two photoelectric converters 27 and 28, and a foreign matter or a flaw on the wafer surface using the output from the signal detector 29 and present on the wafer surface. A discriminating circuit 30 for distinguishing from a dot-shaped recess is provided.

【0023】光源21,22はレーザが用いられてい
る。光源21,22を出た光は、別々の光学系24,2
5によってウェーハ23の表面に集光される。これら2
つの光源21,22を出た光は、同一時刻にかつ同一の
点で測定するためにウェーハ23の表面に集光される。
しかも、比較的接近した異なる2つの波長(例えば、4
88nmと514.5nm)の照明光を用いて、2つの
異なる入射角(例えば、20度と70度)でウェーハ2
3を照明するように構成する。そして、2つの光電変換
器27,28は、それらの比較的接近した異なる2つの
波長の散乱光を入射面に対し同じ方位・角皮で受光し、
信号を出力する。信号検出器29は、2つの光電変換器
27,28からの信号を検出し、弁別回路30は、その
信号検出器29からの出力信号を利用して、ウェーハ表
面上の異物や傷等と、ウェーハ表面に存在する点状の凹
部とを区別する。
As the light sources 21 and 22, lasers are used. Light emitted from the light sources 21 and 22 is separated into separate optical systems 24 and 2
5 condenses on the surface of the wafer 23. These two
Light emitted from the two light sources 21 and 22 is condensed on the surface of the wafer 23 for measurement at the same time and at the same point.
Moreover, two relatively different wavelengths (for example, 4
Wafer 2 at two different angles of incidence (eg, 20 degrees and 70 degrees) using illumination light of 88 nm and 514.5 nm).
3 is configured to be illuminated. Then, the two photoelectric converters 27 and 28 receive the scattered lights of two different wavelengths which are relatively close to each other with the same azimuth and cuticle on the incident surface,
Output a signal. The signal detector 29 detects signals from the two photoelectric converters 27 and 28, and the discrimination circuit 30 uses the output signal from the signal detector 29 to detect foreign matter and scratches on the wafer surface, A distinction is made between point-like recesses present on the wafer surface.

【0024】図3は、同じ散乱光強度レベルの異物から
出力される信号と凹部から出力される信号の例を対比し
て示す。
FIG. 3 shows an example of a signal output from a foreign substance having the same scattered light intensity level and an example of a signal output from a concave portion.

【0025】ウェーハ表面の点状の凹部と異物との区別
は、次のようにして行う。すなわち、2つの光電変換器
27,28の方位・角度を固定し、入射角の変化に対す
る散乱光の強さの変化を検出する。ウェーハ表面に付着
した異物に対する散乱光の強さの変化を検出するととも
に、ウェーハ表面の微小な凹部に対する散乱光の強さの
変化を検出する。両者を比べると、図3に示されている
ように、入射角が小さいときは、両者の信号は比較的大
きく、両者の区別は困難であるが、入射角が大きいとき
は、異物の信号は比較的大きいのに対し、凹部の信号は
比較的小さく、両者の区別は容易である。
The distinction between the point-like concave portions on the wafer surface and the foreign matters is performed as follows. That is, the azimuth and angle of the two photoelectric converters 27 and 28 are fixed, and the change in the intensity of the scattered light with respect to the change in the incident angle is detected. A change in the intensity of the scattered light with respect to the foreign matter attached to the wafer surface is detected, and a change in the intensity of the scattered light with respect to the minute concave portion on the wafer surface is detected. Comparing the two, as shown in FIG. 3, when the incident angle is small, the signals of the two are relatively large, and it is difficult to distinguish between the two. While the signal is relatively large, the signal in the concave portion is relatively small, and it is easy to distinguish between the two.

【0026】このように入射角を変えて散乱光強度の
差、つまり入射角が変わった時の信号の変化の大きさを
比較すると、その散乱物体が異物であるか凹部であるか
の区別がつくのである。
By comparing the difference in the intensity of the scattered light, ie, the magnitude of the change in the signal when the angle of incidence is changed, by changing the angle of incidence, it is possible to determine whether the scattered object is a foreign substance or a recess. It comes.

【0027】なお、点状の凹部と、凹部形状の傷とを区
別できなくなる可能性があるが、傷は一般に異物や点状
の凹部に比べて大きく(長く)、信号が孤立して存在す
るかどうか(隣り合う複数の走査線にも存在するかどう
か)を調べることにより、区別するようにする。
Although there is a possibility that it is not possible to distinguish the point-shaped recess from the recess-shaped scratch, the scratch is generally larger (longer) than the foreign material or the dot-shaped recess, and the signal is present in isolation. By checking whether they are present on a plurality of adjacent scanning lines as well.

【0028】前述の実施例では、同一の入射面内で、異
なる入射角となるようにしたが、入射面に対し同じ方位
・角度で受光すると言う条件を満たせば入射面は別々で
もよい。
In the above-described embodiment, different incident angles are set within the same incident plane. However, different incident planes may be used as long as light is received at the same azimuth and angle with respect to the incident plane.

【0029】また、前述の実施例では、ウェーハの回転
と並進機構を用いた螺旋走査と呼ばれる走査方式を採用
しているが、本発明は、これに限らず、レーザビームを
X−Y2次元に走査する等の方法及び装置にも適用でき
る。
Further, in the above-described embodiment, a scanning method called spiral scanning using a rotation and translation mechanism of a wafer is adopted. However, the present invention is not limited to this, and the laser beam is converted into two-dimensional XY. The present invention can be applied to a method and an apparatus for scanning.

【0030】また、入射角を大きくすると、凹部からの
散乱光が小さくなるから、凹部からの散乱光が検出され
ないという点に着目すれば、1波長だけを用いて、入射
角を大きくし、信号検出回路を工夫すれば、ウェーハ表
面上の異物や傷等と、ウェーハ表面に存在する点状の凹
部とを区別することが可能となるが、その場合、異物の
サイズが非常に小さくなると、小さな信号も検出する必
要が生じる。そうすると、凹部からの信号を検出するよ
うになってしまう。これに対し、本発明のように信号強
度を比較するように構成すると、異物のサイズが非常に
小さくなっても、異物と凹部の区別が出来る。
When the incident angle is increased, the scattered light from the concave portion is reduced. Therefore, if attention is paid to the fact that the scattered light from the concave portion is not detected, the incident angle is increased by using only one wavelength and the signal is increased. If the detection circuit is devised, it is possible to distinguish foreign matters and scratches on the wafer surface from point-like concave portions present on the wafer surface, but in this case, when the size of the foreign matter becomes very small, The signal also needs to be detected. Then, a signal from the concave portion will be detected. On the other hand, when the signal strength is compared as in the present invention, even if the size of the foreign matter becomes very small, the foreign matter and the concave portion can be distinguished.

【0031】[0031]

【発明の効果】本発明による、半導体基板その他のウェ
ーハ表面検出装置は、半導体集積回路を作る際に問題と
ならない微小な凹部を除いて、ウェーハ表面に付着した
異物や傷を、ウェーハ表面に存在する点状の凹部と区別
して検出できる。その結果、材料であるウェーハの無駄
を省く事ができる。
According to the present invention, a semiconductor substrate or other wafer surface detecting apparatus can remove foreign matter and scratches adhering to the wafer surface except for minute concave portions which do not pose a problem when fabricating a semiconductor integrated circuit. It can be detected separately from the dot-shaped concave portions. As a result, waste of the wafer as the material can be eliminated.

【図面の簡単な説明】[Brief description of the drawings]

【図1】従米のウェーハ表面検査装置の概略構成図。FIG. 1 is a schematic configuration diagram of a conventional U.S. wafer surface inspection apparatus.

【図2】本発明による好適な実施例を示す概略構成図。FIG. 2 is a schematic configuration diagram showing a preferred embodiment according to the present invention.

【図3】本発明による、異物と凹部を弁別するのに用い
る信号の一例を示す模式図。
FIG. 3 is a schematic diagram showing an example of a signal used to discriminate a foreign substance and a concave portion according to the present invention.

【符号の説明】[Explanation of symbols]

10 光源 11 光学系 12 ウェーハ 13 集光点 14 レンズ 15 光電変換器 16 モータ 17 信号検出回路 21,22 光源 23 ウェーハ 24,25 光学系 26 集光点 27,28 光電変換器 29 信号検出器 30 弁別回路 DESCRIPTION OF SYMBOLS 10 Light source 11 Optical system 12 Wafer 13 Focus point 14 Lens 15 Photoelectric converter 16 Motor 17 Signal detection circuit 21, 22 Light source 23 Wafer 24, 25 Optical system 26 Focus point 27, 28 Photoelectric converter 29 Signal detector 30 Discrimination circuit

───────────────────────────────────────────────────── フロントページの続き (72)発明者 岩 陽一郎 東京都板橋区蓮沼町75番1号 株式会社ト プコン内 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Yoichiro Iwa 75-1 Hasunumacho, Itabashi-ku, Tokyo Inside Topcon Co., Ltd.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 光源からの光をウェーハ表面に集光し、
集光点を走査しながら、集光点からの散乱光を光電変換
器で受光し、光電変換器からの信号を検出することによ
り、ウェーハ表面上の異物や傷を検査するウェーハ表面
検査方法において、 2つの異なる波長の光を、異なる入射角で、同一点に集
光し、集光点からの散乱光を2波長別々に光電変換し、
各々の信号の強度差を利用して、ウェーハ表面上の異物
や傷と、ウェーハ表面に存在する点状の凹部とを区別す
る事を特徴とするウェーハ表面検査方法。
1. A method for condensing light from a light source on a wafer surface,
In the wafer surface inspection method of inspecting foreign matter and scratches on the wafer surface by scanning the focal point and receiving scattered light from the focal point with a photoelectric converter and detecting a signal from the photoelectric converter. The light of two different wavelengths is condensed at the same point at different angles of incidence, and the scattered light from the converging point is photoelectrically converted into two wavelengths separately.
A wafer surface inspection method characterized in that a difference in the intensity of each signal is used to distinguish a foreign substance or a scratch on the wafer surface from a point-like concave portion present on the wafer surface.
【請求項2】 2つの異なる波長の散乱光を受光する際
に、その受光位置が、各波長の照明光の入射面に対し
て、同じ相対位置関係になるようにした請求項1に記載
のウェーハ表面検査方法。
2. The light receiving device according to claim 1, wherein when receiving the scattered light beams of two different wavelengths, the light receiving positions thereof have the same relative positional relationship with respect to the incident surface of the illumination light beam of each wavelength. Wafer surface inspection method.
【請求項3】 光源と、その光源からの光をウェーハ表
面に集光する光学系と,集光点をウェーハ表面の所定域
にわたって走査するための走査手段と、集光点からの散
乱光を受光する光電変換器を備えた受光部と、受光部か
らの信号を検出する信号検出器とを有するウェーハ表面
検査装置において、 前記光源は2つの異なる波長の光源であり,前記光学系
は2つの波長の光を異なる入射角でウェーハ表面の同一
点に集光するように構成され、さらに、前記受光部は2
つの波長を別々に受光するように構成されていて、信号
検出器からの出力を利用して、ウェーハ表面上の異物や
傷等と、ウェーハ表面に存在する点状の凹部とを区別す
る弁別回路を設けた事を特徴とするウェーハ表面検査装
置。
3. A light source, an optical system for condensing light from the light source on a wafer surface, a scanning unit for scanning a converging point over a predetermined area on the wafer surface, and a scattered light from the converging point. In a wafer surface inspection apparatus having a light receiving unit provided with a photoelectric converter for receiving light and a signal detector for detecting a signal from the light receiving unit, the light source is a light source having two different wavelengths, and the optical system has two light sources. The light receiving unit is configured to collect light having different wavelengths at the same point on the wafer surface at different incident angles.
Discriminator circuit that is configured to receive two wavelengths separately and uses the output from the signal detector to distinguish foreign matter or scratches on the wafer surface from dot-shaped recesses on the wafer surface Wafer surface inspection equipment characterized by having a.
【請求項4】 2つの異なる波長の散乱光を受光する受
光部を、各波長の照明光の入射面に対して、同じ相対位
置関係になるように配置した請求項3に記載のウェーハ
表面検査装置。
4. The wafer surface inspection according to claim 3, wherein the light receiving units that receive the scattered lights of two different wavelengths are arranged so as to have the same relative positional relationship with respect to the incident surface of the illumination light of each wavelength. apparatus.
JP32393997A 1997-11-11 1997-11-11 Wafer surface inspecting method and equipment therefor Pending JPH11142127A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP32393997A JPH11142127A (en) 1997-11-11 1997-11-11 Wafer surface inspecting method and equipment therefor
US09/184,075 US6104481A (en) 1997-11-11 1998-11-02 Surface inspection apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32393997A JPH11142127A (en) 1997-11-11 1997-11-11 Wafer surface inspecting method and equipment therefor

Publications (1)

Publication Number Publication Date
JPH11142127A true JPH11142127A (en) 1999-05-28

Family

ID=18160324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32393997A Pending JPH11142127A (en) 1997-11-11 1997-11-11 Wafer surface inspecting method and equipment therefor

Country Status (1)

Country Link
JP (1) JPH11142127A (en)

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