JPH11139881A - Composite sintered compact of silicon nitride and boron nitride - Google Patents

Composite sintered compact of silicon nitride and boron nitride

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Publication number
JPH11139881A
JPH11139881A JP9319165A JP31916597A JPH11139881A JP H11139881 A JPH11139881 A JP H11139881A JP 9319165 A JP9319165 A JP 9319165A JP 31916597 A JP31916597 A JP 31916597A JP H11139881 A JPH11139881 A JP H11139881A
Authority
JP
Japan
Prior art keywords
boron nitride
nitride
silicon
silicon nitride
composite sintered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9319165A
Other languages
Japanese (ja)
Inventor
Yasuaki Unno
泰明 海野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Isuzu Ceramics Research Institute Co Ltd
Original Assignee
Isuzu Ceramics Research Institute Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Isuzu Ceramics Research Institute Co Ltd filed Critical Isuzu Ceramics Research Institute Co Ltd
Priority to JP9319165A priority Critical patent/JPH11139881A/en
Publication of JPH11139881A publication Critical patent/JPH11139881A/en
Pending legal-status Critical Current

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  • Sliding-Contact Bearings (AREA)

Abstract

PROBLEM TO BE SOLVED: To produce a composite sintered compact of the silicon nitride and the boron nitride increased in friction characteristic without lowering mechanical strength. SOLUTION: The subject compact has a two-layer structure in which a silicon nitride layer 4 containing the boron nitride (n-BN) is present on a surface of a base material 3 consisting of the silicon nitride 5, and in the silicon nitride 4 containing the boron nitride (h-BN) 6, the compd. of iron and silicon (Fi-Si) 7 is present at an intercrystalline phase between the silicon nitride 5 and the boron nitride (h-BN) 6. The content of the boron nitride (h-BN) 6 dispersed in the surface layer 4 is 3-50 vol.%. A thickness of the surface layer 4 is 30-500 μm. An average value of a longitudinal direction length of the boron nitride 6 dispersed in the surface layer 4 is 0.5-10 μm. The thickness of the compd. phase 7 of the iron and the silicon at the surface layer 4 is 0.3-10 μm.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は摺動部品に適した窒
化ケイ素と窒化ホウ素の複合焼結体、特に窒化ホウ素の
低摩擦性を利用した窒化ケイ素と窒化ホウ素の複合焼結
体に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a composite sintered body of silicon nitride and boron nitride suitable for sliding parts, and more particularly to a composite sintered body of silicon nitride and boron nitride utilizing the low friction property of boron nitride. is there.

【0002】[0002]

【従来の技術】固体潤滑性を有する六方晶窒化ホウ素
(h-BN)は、それ自身の濡れ性が悪いことから、10気
圧以下の低圧焼成により窒化ホウ素(h-BN)を窒化ケイ
素(Si3N4 )と複合させて組織の緻密な焼結体を得るこ
とはできない。一方、ホツトプレスなどの高圧焼成によ
れば、窒化ケイ素(Si3N4 )からなる母相ないし連続相
に、窒化ホウ素(h-BN)の粒子が分散する、組織の緻密
な焼結体(セラミツクス)を得ることができる。しか
し、高圧焼成では出発原料である窒化ホウ素(h-BN)粉
末が、焼成中に2次粒子として凝集して粒子サイズが大
きくなり、また気孔が多く残るので、十分な機械的強度
が得られない。また、気孔により焼結体の表面は凸凹が
生じるので、摩擦係数が大きくなり、窒化ホウ素(h-B
N)の固体潤滑性を利用することはできない。それ故
に、摺動部品に適した窒化ケイ素系焼結体を得るには、
機械的特性に優れた窒化ケイ素に、境界潤滑域でも低摩
擦性を発揮する窒化ホウ素(h-BN)をいかに複合するか
が課題となる。
2. Description of the Related Art Since hexagonal boron nitride (h-BN) having solid lubricity has poor wettability, boron nitride (h-BN) is converted to silicon nitride (Si-BN) by firing at a low pressure of 10 atm or less. It is not possible to obtain a sintered body with a fine structure by combining with 3 N 4 ). On the other hand, according to high-pressure firing such as hot pressing, a dense sintered body (ceramics) in which boron nitride (h-BN) particles are dispersed in a matrix or continuous phase composed of silicon nitride (Si 3 N 4 ). ) Can be obtained. However, in high-pressure firing, the starting material, boron nitride (h-BN) powder, agglomerates as secondary particles during firing and the particle size increases, and many pores remain, resulting in sufficient mechanical strength. Absent. In addition, since the surface of the sintered body is uneven due to pores, the coefficient of friction increases, and boron nitride (hB
The solid lubricity of N) cannot be used. Therefore, to obtain a silicon nitride based sintered body suitable for sliding parts,
The challenge is how to combine boron nitride (h-BN), which exhibits low friction even in the boundary lubrication region, with silicon nitride, which has excellent mechanical properties.

【0003】[0003]

【発明が解決しようとする課題】本発明の課題は上述の
問題に鑑み、機械的強度を損うことなく摩擦特性を高め
た、窒化ケイ素と窒化ホウ素の複合焼結体を提供するこ
とにある。
SUMMARY OF THE INVENTION In view of the above problems, an object of the present invention is to provide a composite sintered body of silicon nitride and boron nitride which has improved friction characteristics without impairing mechanical strength. .

【0004】[0004]

【課題を解決するための手段】上記課題を解決するため
に、本発明の構成は窒化ケイ素(Si3N4 )からなる基材
の表面に窒化ホウ素(h-BN)を含む窒化ケイ素層が存在
する2層構造体であり、窒化ホウ素を含む窒化ケイ素層
では、窒化ケイ素母相中に板状の窒化ホウ素が基材表面
に平行にかつほぼ均一に分散しており、また窒化ホウ素
の周りに鉄とケイ素の化合物(Fe-Si )が存在すること
を特徴とする。
Means for Solving the Problems In order to solve the above problems, the structure of the present invention is to provide a silicon nitride layer containing boron nitride (h-BN) on the surface of a substrate made of silicon nitride (Si 3 N 4 ). In a silicon nitride layer containing boron nitride, which is an existing two-layer structure, plate-like boron nitride is dispersed in the silicon nitride matrix in a direction substantially parallel to the surface of the base material, and around the boron nitride. And a compound of iron and silicon (Fe-Si).

【0005】[0005]

【発明の実施の形態】本発明では複合焼結体が2層構造
をなし、表面層である六方晶窒化ホウ素(h-BN)を含む
窒化ケイ素層のみに窒化ホウ素が存在するので、窒化ホ
ウ素の含有量を多くしても機械的強度の低下が少い。表
面層である窒化ホウ素を含む窒化ケイ素層では、窒化ホ
ウ素の周囲に、焼結助剤との親和性が高い鉄とケイ素の
化合物(Fe-Si )が存在するので、複合焼結体に存する
気孔が少く組織が緻密なものになり、機械的強度の低下
がない。
BEST MODE FOR CARRYING OUT THE INVENTION In the present invention, the composite sintered body has a two-layer structure, and boron nitride exists only in the silicon nitride layer containing hexagonal boron nitride (h-BN) as the surface layer. , The decrease in mechanical strength is small. In the silicon nitride layer containing boron nitride, which is the surface layer, the compound of iron and silicon (Fe-Si), which has a high affinity for the sintering aid, exists around the boron nitride, so it exists in the composite sintered body. The structure is dense with few pores, and there is no decrease in mechanical strength.

【0006】[0006]

【実施例】図1に示すように、本発明による窒化ケイ素
と窒化ホウ素の複合焼結体2は、窒化ケイ素(Si3N4
からなる基材3の表面に、厚さが30〜500μmの六
方結晶窒化ホウ素[(h-BN)、以下これを単に窒化ホウ
素と呼ぶ]を含む窒化ケイ素層4(以下これを表面相と
呼ぶ)が存在する2層構造体である。図2に示すよう
に、表面層4では窒化ケイ素5の母相に板状の窒化ホウ
素6が、基材である窒化ケイ素3の表面に対しほぼ平行
に分散し、窒化ケイ素5と窒化ホウ素6との間の粒界相
に、鉄とケイ素の化合物(Fe-Si )7が存在する。表面
層4に分散する窒化ホウ素6の含有量は3〜50vol.%
であり、窒化ホウ素6の長手方向の長さの平均値は0.
5〜10μmである。表面層4における鉄とケイ素の化
合物相7の厚さは0.3〜10μmである。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS As shown in FIG. 1, a composite sintered body 2 of silicon nitride and boron nitride according to the present invention is made of silicon nitride (Si 3 N 4 ).
A silicon nitride layer 4 (hereinafter, referred to as a surface phase) containing hexagonal crystalline boron nitride [(h-BN), hereinafter simply referred to as boron nitride] having a thickness of 30 to 500 μm ) Is a two-layer structure. As shown in FIG. 2, in the surface layer 4, a plate-like boron nitride 6 is dispersed in the matrix of the silicon nitride 5 substantially parallel to the surface of the silicon nitride 3 serving as the base material. The iron-silicon compound (Fe—Si 2) 7 is present in the grain boundary phase between. The content of boron nitride 6 dispersed in the surface layer 4 is 3 to 50 vol.%.
And the average value of the length in the longitudinal direction of the boron nitride 6 is 0.1.
5 to 10 μm. The thickness of the compound phase 7 of iron and silicon in the surface layer 4 is 0.3 to 10 μm.

【0007】[実施例1]主原料であるケイ素(Si)粉
末と焼結助剤であるアルミナ(Al2O3 )粉末とイツトリ
ア(Y2O3)粉末との混合粉末80vol.%に、予め粒径が
0.3〜8μmの窒化ホウ素(h-BN)粉末の表面に鉄
(Fe)メツキした粉末20vol.%を混合し、スプレード
ライヤにより粒径が10〜80μmの粒子に造粒して、
溶射原料の粒子を作製した。
[Example 1] A mixed powder of silicon (Si) powder as a main raw material, alumina (Al 2 O 3 ) powder and sintering aid and yttria (Y 2 O 3 ) powder as 80 vol. The surface of boron nitride (h-BN) powder having a particle size of 0.3 to 8 μm is mixed with 20 vol.% Of a powder coated with iron (Fe) in advance and granulated into particles having a particle size of 10 to 80 μm by a spray dryer. hand,
Particles of the thermal spraying raw material were produced.

【0008】一方、主原料である窒化ケイ素(Si3N4
粉末に、焼結助剤であるアルミナ(Al2O3 )粉末とイツ
トリア(Y2O3)粉末とを添加した混合粉末から成形体を
成形し、該成形体を10気圧、温度1300℃の窒素雰
囲気で約3時間焼成して気孔を有する仮焼体を得た。得
られた仮焼体の表面に、上述した溶射原料の粒子を溶射
した。この時、仮焼体の溶射層の気孔率を50〜60%
にした。次いで溶射層を備えた仮焼体を、10気圧、温
度1300℃の窒素雰囲気で3時間反応焼成し、次いで
10気圧、温度1800℃の窒素雰囲気で3時間焼成し
て、本発明による窒化ケイ素と窒化ホウ素の複合焼結体
を得た。
On the other hand, silicon nitride (Si 3 N 4 ) as a main raw material
A compact is formed from a mixed powder obtained by adding alumina (Al 2 O 3 ) powder and yttria (Y 2 O 3 ) powder, which are sintering aids, to the powder at 10 atm and a temperature of 1300 ° C. Calcination was carried out for about 3 hours in a nitrogen atmosphere to obtain a calcined body having pores. The particles of the above-mentioned sprayed material were sprayed on the surface of the obtained calcined body. At this time, the porosity of the sprayed layer of the calcined body is set to 50 to 60%.
I made it. Next, the calcined body provided with the sprayed layer is fired in a nitrogen atmosphere at 10 atm and a temperature of 1300 ° C. for 3 hours, and then fired in a nitrogen atmosphere at 10 atm and a temperature of 1800 ° C. for 3 hours. A composite sintered body of boron nitride was obtained.

【0009】本発明による窒化ケイ素と窒化ホウ素の複
合焼結体2を溶射した面に対し垂直に切断し、その組織
を電子顕微鏡により観察し、分析したところ、本発明に
よる窒化ケイ素と窒化ホウ素の複合焼結体2は窒化ケイ
素(Si3N4 )層つまり基材3と、窒化ホウ素(h-BN)を
含有する窒化ケイ素(Si3N4 )層(表面層)4との2層
構造のものであり、基材3及び表面層4ともに気孔率は
1%以下であつた。表面層4において、窒化ホウ素(h-
BN)は窒化ケイ素基材3の表面に対し平行をなす板状の
もので均一に分散していた。これは原料ではほぼ球状で
あつた窒化ホウ素(h-BN)が溶射時の衝突により変形し
たものと思われる。また、窒化ホウ素(h-BN)の表面に
メツキした鉄(Fe)は、焼成中に鉄とケイ素の化合物
(Fe-Si )に変化しており、この鉄とケイ素の化合物は
結晶粒界成分に密着していた。窒化ケイ素(Si3N4 )の
基材3と表面層4との間には、気孔や亀裂は見られなか
つた。
The composite sintered body 2 of silicon nitride and boron nitride according to the present invention was cut perpendicularly to the sprayed surface, and its structure was observed and analyzed with an electron microscope. The composite sintered body 2 has a two-layer structure of a silicon nitride (Si 3 N 4 ) layer, that is, a substrate 3, and a silicon nitride (Si 3 N 4 ) layer (surface layer) 4 containing boron nitride (h-BN). The porosity of both the substrate 3 and the surface layer 4 was 1% or less. In the surface layer 4, boron nitride (h-
BN) was a plate-like material parallel to the surface of the silicon nitride substrate 3 and was uniformly dispersed. This is thought to be due to the fact that boron nitride (h-BN), which was almost spherical in the raw material, was deformed by collision during thermal spraying. In addition, iron (Fe) plated on the surface of boron nitride (h-BN) changes into a compound of iron and silicon (Fe-Si) during firing, and the compound of iron and silicon has a grain boundary component. Was in close contact with No pores or cracks were found between the substrate 3 of silicon nitride (Si 3 N 4 ) and the surface layer 4.

【0010】本発明による窒化ケイ素と窒化ホウ素の複
合焼結体2の表面加工及び研磨した後、4点曲げ強度試
験と摺動摩擦試験を行つた。表面層4に分散する窒化ホ
ウ素(h-BN)の含有量が17vol.%である本発明の窒化
ケイ素と窒化ホウ素の複合焼結体2と、従来の窒化ケイ
素焼結体との摩擦特性は図3に示すとおりである。本発
明の窒化ケイ素と窒化ホウ素の複合焼結体2は、従来の
一般的な窒化ケイ素焼結体よりも摩擦係数が小さい理由
は、混合潤滑域では鉄とケイ素の化合物(Fe-Si )が潤
滑油を吸着して潤滑油膜を形成すること、境界潤滑域で
は窒化ホウ素が固体潤滑剤として働くことによるものと
考えられる。
After surface treatment and polishing of the composite sintered body 2 of silicon nitride and boron nitride according to the present invention, a four-point bending strength test and a sliding friction test were performed. The friction characteristics between the silicon nitride-boron nitride composite sintered body 2 of the present invention in which the content of boron nitride (h-BN) dispersed in the surface layer 4 is 17 vol. As shown in FIG. The composite sintered body 2 of silicon nitride and boron nitride of the present invention has a smaller coefficient of friction than a conventional general silicon nitride sintered body because a compound of iron and silicon (Fe-Si) is mixed in the mixed lubrication region. It is considered that the lubricating oil is adsorbed to form a lubricating oil film, and that boron nitride acts as a solid lubricant in the boundary lubrication region.

【0011】[実施例2]実施例1と同様の方法で作製
した、表面層4に分散する窒化ホウ素(h-BN)の含有量
が異なる複数の窒化ケイ素と窒化ホウ素の複合焼結体に
ついて、4点曲げ強度試験と摺動摩擦試験を行つたとこ
ろ、図4に示すような結果を得た。表面層4に分散する
窒化ホウ素の含有量が3vol.%以下では摩擦係数が低減
する効果は得られず、また表面層4に分散する窒化ホウ
素の含有量が50vol.%を超えると、気孔が生じるため
強度が低下した。
[Example 2] A plurality of composite sintered bodies of silicon nitride and boron nitride having different contents of boron nitride (h-BN) dispersed in the surface layer 4 manufactured in the same manner as in Example 1 When a four-point bending strength test and a sliding friction test were performed, the results shown in FIG. 4 were obtained. If the content of boron nitride dispersed in the surface layer 4 is 3 vol.% Or less, the effect of reducing the friction coefficient cannot be obtained, and if the content of boron nitride dispersed in the surface layer 4 exceeds 50 vol. As a result, the strength was reduced.

【0012】[実施例3]実施例1と同様の方法で作製
した、窒化ホウ素(h-BN)が分散する表面層4の厚さt
(図1)が異なる複数の窒化ケイ素と窒化ホウ素の複合
焼結体について、4点曲げ強度試験と摺動摩擦試験を行
つたところ、図5に示すような結果を得た。表面層4の
厚さが30μm以下の窒化ケイ素と窒化ホウ素の複合焼
結体を作製することは困難であつた。窒化ケイ素と窒化
ホウ素の複合焼結体の表面層4の厚さが500μmを超
えると、表面層4ないし被膜に亀裂が発生し、強度が低
下した。表面層4の厚さtは、基材3となる窒化ケイ素
の仮焼体に、窒化ホウ素を含む溶射原料の粒子を溶射す
る厚さに依存し、溶射する厚さが厚くなると、溶射時に
亀裂が発生する。
Example 3 The thickness t of the surface layer 4 in which boron nitride (h-BN) is dispersed, manufactured in the same manner as in Example 1,
When a four-point bending strength test and a sliding friction test were performed on a plurality of composite sintered bodies of silicon nitride and boron nitride having different (FIG. 1), results as shown in FIG. 5 were obtained. It was difficult to produce a composite sintered body of silicon nitride and boron nitride in which the thickness of the surface layer 4 was 30 μm or less. When the thickness of the surface layer 4 of the composite sintered body of silicon nitride and boron nitride exceeded 500 μm, cracks occurred in the surface layer 4 or the coating and the strength was reduced. The thickness t of the surface layer 4 depends on the thickness of the calcined body of silicon nitride serving as the base material 3 at which the particles of the thermal spraying material containing boron nitride are thermally sprayed. Occurs.

【0013】[実施例4]実施例1と同様の方法で作製
した、表面層4に分散する窒化ホウ素(h-BN)の粒径が
異なる複数の窒化ケイ素と窒化ホウ素の複合焼結体につ
いて、4点曲げ強度試験と摺動摩擦試験を行つた。4点
曲げ強度試験の結果、表面層4に分散する窒化ホウ素の
長手方向の長さの平均値が0.5〜10μmである窒化
ケイ素と窒化ホウ素の複合焼結体では、強度の低下は見
られなかつたが、表面層4に分散する窒化ホウ素の長手
方向の長さが10μmを超える窒化ケイ素と窒化ホウ素
の複合焼結体では、窒化ホウ素の粒子が破壊の起点とな
り、強度が低下した。
[Example 4] A plurality of composite sintered bodies of silicon nitride and boron nitride produced by the same method as in Example 1 and having different particle diameters of boron nitride (h-BN) dispersed in the surface layer 4 A four-point bending strength test and a sliding friction test were performed. As a result of the four-point bending strength test, a decrease in the strength of the composite sintered body of silicon nitride and boron nitride in which the average length in the longitudinal direction of boron nitride dispersed in the surface layer 4 is 0.5 to 10 μm is not observed. However, in the composite sintered body of silicon nitride and boron nitride in which the length of the boron nitride dispersed in the surface layer 4 in the longitudinal direction exceeds 10 μm, the particles of boron nitride serve as a starting point of fracture, and the strength is reduced.

【0014】[実施例5]出発原料として窒化ホウ素
(h-BN)の表面の鉄(Fe)メツキの厚さが異なるものを
用い、実施例1と同様の方法で複数の窒化ケイ素と窒化
ホウ素の複合焼結体2を作製し、窒化ホウ素(h-BN)の
表面にメツキする鉄の厚さを変えることによる、窒化ケ
イ素と窒化ホウ素の複合焼結体2の表面層4に分散する
鉄とケイ素の化合物(Fe-Si )相の厚さの影響を試験し
た。試験の結果、窒化ケイ素と窒化ホウ素の複合焼結体
2の表面層4に存在する鉄とケイ素の化合物相の厚さが
0.3μm以下では、窒化ホウ素の表面に鉄がメツキさ
れていない部分が残るために、鉄とケイ素の化合物相に
気孔が生じる。また、窒化ケイ素と窒化ホウ素の複合焼
結体2の表面層4に存在する鉄とケイ素の化合物相の厚
さが10μmを超えると、鉄とケイ素の化合物相の内部
に鉄とケイ素の化合物にならない鉄のままの部分が存在
し、この部分に亀裂が生じ、強度が低下した。
Example 5 A plurality of silicon nitride and boron nitride were formed in the same manner as in Example 1 by using a material having a different iron (Fe) plating thickness on the surface of boron nitride (h-BN) as a starting material. By dispersing iron in the surface layer 4 of the composite sintered body 2 of silicon nitride and boron nitride by changing the thickness of iron plated on the surface of boron nitride (h-BN). The effect of the thickness of the iron and silicon compound (Fe-Si) phase was tested. As a result of the test, when the thickness of the compound phase of iron and silicon present in the surface layer 4 of the composite sintered body 2 of silicon nitride and boron nitride is 0.3 μm or less, a portion where iron is not plated on the surface of boron nitride , Pores are formed in the iron-silicon compound phase. When the thickness of the iron-silicon compound phase present in the surface layer 4 of the composite sintered body 2 of silicon nitride and boron nitride exceeds 10 μm, the iron-silicon compound phase is formed inside the iron-silicon compound phase. There was a part of the iron that did not remain, and cracks occurred in this part, and the strength was reduced.

【0015】[0015]

【発明の効果】上述のように、本発明の窒化ケイ素と窒
化ホウ素の複合焼結体は、窒化ケイ素(Si3N4 )からな
る基材の表面に窒化ホウ素(h-BN)を含む窒化ケイ素層
が存在する2層構造体であり、窒化ホウ素を含む窒化ケ
イ素層つまり表面層では、窒化ホウ素と窒化ケイ素との
間の粒界相に鉄とケイ素の化合物(Fe-Si )が存在する
ものであり、特に表面層では窒化ホウ素の周囲に、焼結
助剤との親和性が高い鉄とケイ素の化合物が存在するの
で、焼結中に窒化ホウ素の粒子が凝集して団塊化するの
が抑制される。上述の理由から基材としての窒化ケイ素
の機械的強度が損われることなく、表面層の窒化ホウ素
の低摩擦性が発揮される。
As described above, the composite sintered body of silicon nitride and boron nitride of the present invention has a nitride containing boron nitride (h-BN) on the surface of a substrate made of silicon nitride (Si 3 N 4 ). In a two-layer structure in which a silicon layer is present, in a silicon nitride layer containing boron nitride, that is, a surface layer, a compound of iron and silicon (Fe-Si) is present in a grain boundary phase between boron nitride and silicon nitride. In particular, in the surface layer, there is a compound of iron and silicon, which has a high affinity for the sintering aid, around the boron nitride, so that during the sintering, the boron nitride particles aggregate and agglomerate. Is suppressed. For the reasons described above, the low friction property of the boron nitride in the surface layer is exhibited without impairing the mechanical strength of the silicon nitride as the base material.

【0016】したがつて、本発明の窒化ケイ素と窒化ホ
ウ素の複合焼結体を、例えば内燃機関のシリンダライ
ナ、軸受などの摺動部品に用いれば、摩擦による動力損
失が減じ、燃費を低減できる。
Accordingly, when the composite sintered body of silicon nitride and boron nitride of the present invention is used for a sliding part such as a cylinder liner or a bearing of an internal combustion engine, power loss due to friction is reduced and fuel consumption can be reduced. .

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係る窒化ケイ素と窒化ホウ素の複合焼
結体の概要を示す側面断面図である。
FIG. 1 is a side sectional view showing an outline of a composite sintered body of silicon nitride and boron nitride according to the present invention.

【図2】同窒化ケイ素と窒化ホウ素の複合焼結体の組織
を模式的に表す側面断面図である。
FIG. 2 is a side sectional view schematically showing the structure of a composite sintered body of silicon nitride and boron nitride.

【図3】同窒化ケイ素と窒化ホウ素の複合焼結体の摩擦
特性を表すストライベツク線図である。
FIG. 3 is a strike diagram showing friction characteristics of the composite sintered body of silicon nitride and boron nitride.

【図4】同窒化ケイ素と窒化ホウ素の複合焼結体におけ
る、表面層の窒化ホウ素の含有量に対する、4点曲げ強
度と摩擦係数の関係を表す線図である。
FIG. 4 is a diagram showing the relationship between the four-point bending strength and the friction coefficient with respect to the content of boron nitride in the surface layer in the composite sintered body of silicon nitride and boron nitride.

【図5】同窒化ケイ素と窒化ホウ素の複合焼結体におけ
る、表面層の厚さに対する4点曲げ強度と摩擦係数の関
係を表す線図である。
FIG. 5 is a diagram showing the relationship between the four-point bending strength and the friction coefficient with respect to the thickness of the surface layer in the composite sintered body of silicon nitride and boron nitride.

【符号の説明】[Explanation of symbols]

2:複合焼結体 3:基材(窒化ケイ素層) 4:窒化
ホウ素を含む窒化ケイ素層 5:窒化ケイ素 6:窒化
ホウ素 7:鉄とケイ素の化合物
2: Composite sintered body 3: Base material (silicon nitride layer) 4: Silicon nitride layer containing boron nitride 5: Silicon nitride 6: Boron nitride 7: Compound of iron and silicon

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】窒化ケイ素(Si3N4 )からなる基材の表面
に窒化ホウ素(h-BN)を含む窒化ケイ素層が存在する2
層構造体であり、窒化ホウ素を含む窒化ケイ素層では、
窒化ケイ素母相中に板状の窒化ホウ素が基材表面に平行
にかつほぼ均一に分散しており、また窒化ホウ素の周り
に鉄とケイ素の化合物(Fe-Si )が存在することを特徴
とする、窒化ケイ素と窒化ホウ素の複合焼結体。
1. A silicon nitride layer containing boron nitride (h-BN) is present on the surface of a substrate made of silicon nitride (Si 3 N 4 ).
In a silicon nitride layer containing boron nitride, which is a layer structure,
In the silicon nitride matrix, plate-like boron nitride is distributed almost uniformly and parallel to the substrate surface, and a compound of iron and silicon (Fe-Si) exists around the boron nitride. A composite sintered body of silicon nitride and boron nitride.
【請求項2】前記窒化ホウ素(h-BN)を含む窒化ケイ素
層における、窒化ホウ素粒子の長手方向の長さの平均値
は0.5〜10μmであり、窒化ホウ素の含有量は3〜
50vol.%である、請求項1に記載の窒化ケイ素と窒化
ホウ素の複合焼結体。
2. The silicon nitride layer containing boron nitride (h-BN) has an average longitudinal length of boron nitride particles of 0.5 to 10 μm, and a boron nitride content of 3 to 10 μm.
The composite sintered body of silicon nitride and boron nitride according to claim 1, which is 50 vol.%.
【請求項3】前記窒化ホウ素(h-BN)を含む窒化ケイ素
層における、鉄とケイ素の化合物(Fe-Si )の厚さは
0.3〜10μmである、請求項1に記載の窒化ケイ素
と窒化ホウ素の複合焼結体。
3. The silicon nitride according to claim 1, wherein the thickness of the compound of iron and silicon (Fe-Si) in the silicon nitride layer containing boron nitride (h-BN) is 0.3 to 10 μm. And boron nitride composite sintered body.
【請求項4】前記窒化ホウ素(h-BN)を含む窒化ケイ素
層の厚さは30〜500μmである、請求項1に記載の
窒化ケイ素と窒化ホウ素の複合焼結体。
4. The composite sintered body of silicon nitride and boron nitride according to claim 1, wherein said silicon nitride layer containing boron nitride (h-BN) has a thickness of 30 to 500 μm.
JP9319165A 1997-11-06 1997-11-06 Composite sintered compact of silicon nitride and boron nitride Pending JPH11139881A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9319165A JPH11139881A (en) 1997-11-06 1997-11-06 Composite sintered compact of silicon nitride and boron nitride

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9319165A JPH11139881A (en) 1997-11-06 1997-11-06 Composite sintered compact of silicon nitride and boron nitride

Publications (1)

Publication Number Publication Date
JPH11139881A true JPH11139881A (en) 1999-05-25

Family

ID=18107167

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9319165A Pending JPH11139881A (en) 1997-11-06 1997-11-06 Composite sintered compact of silicon nitride and boron nitride

Country Status (1)

Country Link
JP (1) JPH11139881A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016011218A (en) * 2014-06-27 2016-01-21 京セラ株式会社 Silicon nitride substrate, circuit board including the same, and electronic device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016011218A (en) * 2014-06-27 2016-01-21 京セラ株式会社 Silicon nitride substrate, circuit board including the same, and electronic device

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