JPH11135602A - Electrostatic attraction device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce the generation of particles by setting the surface of a part, where at least a sample of an insulation dielectric layer is attracted to a deposition layer formed by a chemical vapor growth deposition method. SOLUTION: Only the part on an attraction surface of an insulation dielectric layer 3 is set to a deposition layer 4 by CVD method, and large part of remaining, insulation dielectric layer 3 is formed by the sintering method or the flame-spraying method. The deposition layer 4 needs to be formed at the part on the attraction surface of at least the insulation dielectric layer 3. As long as the deposition layer 4 is formed at this part and there are no functional problems in an electrostatic attraction device 1, the deposition layer 4 may be formed on the surface of other parts. In this manner, at least the attraction surface of the insulation dielectric layer 3 is set to the deposition layer by the CVD method, a surface after corrosion and wear when fluorine gas with high corrosive property is used has less recesses and projections, as compared with that which is created by the sintering method and hence becomes uniform, thus reducing the number of occurrence of particles which are generated due to the cutting of a sample (an object to be attracted).

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic chuck, and more particularly to a semiconductor or liquid crystal device capable of strongly electrostatically adsorbing and holding a conductive, semiconductive or insulating sample and easily detaching the sample. The present invention relates to an electrostatic suction device useful for a manufacturing process and the like.

[0002]

2. Description of the Related Art In recent years, processes for manufacturing semiconductors and liquid crystals, in particular, processes such as dry etching, ion implantation, and vapor deposition have been automated and dried, and accordingly, the number of manufacturing processes used under vacuum conditions has been increasing. I have.

[0003] In addition, silicon wafers and glass substrates as substrates have become larger in diameter, and the integration of circuits has been increased.
With miniaturization, positional accuracy at the time of patterning has also become increasingly important. Conventionally, vacuum chucks have been used for transporting and fixing substrates by suction. However, this vacuum chuck cannot be used because there is no pressure difference under vacuum conditions, and conversely, even if the substrate can be sucked under non-vacuum conditions, the sucked portion is locally sucked, so it is sucked. There is a disadvantage that the substrate is partially distorted and cannot be positioned with high accuracy. Therefore, this vacuum chuck is not suitable for recent semiconductor and liquid crystal manufacturing processes.

As an improvement over these drawbacks, attention has been paid to an electrostatic attraction device that transports a substrate by using an electrostatic force or attracts and fixes the substrate, and has begun to be used. Conventionally, such an electrostatic adsorption device has been used in which a copper electrode is attached to an organic resin such as polyimide or silicone rubber, but when the heat resistance of the organic resin is taken into consideration, the temperature of the sample to be adsorbed is 200 ° C or less. There are problems that it can be used only when it is cooled and that its life is short in a corrosive gas atmosphere.

In order to solve the problems of heat resistance and corrosion resistance, recently, aluminum oxide (alumina), boron nitride,
A ceramic made by embedding a conductive electrode consisting of a metal such as copper, molybdenum, and tungsten, or a conductive ceramic thin film such as silicon carbide and graphite in an insulating dielectric layer consisting of an electrically insulating ceramic such as aluminum nitride and silicon nitride An electrostatic chuck (electrostatic chuck) has been devised and started to be used.

The insulating dielectric layer made of the electrically insulating ceramics is formed by a sintering method in which an auxiliary is mixed with ceramic powder and sintered, or by a thermal spraying method in which ceramics are sprayed and formed. Have been devised. For example, Japanese Patent Application Laid-Open No.
Examples thereof include those described in Japanese Patent Application Laid-Open No. 8-123381. However, since thermal spraying is porous and generates dust and lacks reliability, when high performance is required, a normal sintering method is used. The formed one is used.

[0007]

However, a ceramic electrostatic attraction device using an insulating dielectric layer formed by a sintering method is harder than an organic resin electrostatic attraction device. When the sample to be adsorbed comes into contact with the sample, the surface of the sample or the insulating dielectric layer is shaved, and for example, when an 8-inch wafer is used as a sample, tens of thousands of particles are generated. In order to avoid such a problem, an example has been devised in which irregularities are provided on the surface of the electrostatic adsorption device with which the sample comes into contact, and particles generated by reducing the contact area as much as possible are reduced to about 1/10. It takes time and effort in processing and the like, and the contact area is small, so that there are problems such as scratching the sample to be adsorbed, which is not practical. As described above, when the ceramic electrostatic chuck is used, there is a problem that the yield of devices to be manufactured is reduced.

In addition, since a highly corrosive fluorine-based gas has recently been used in a semiconductor process, there is a problem that the vicinity of the surface of ceramics is gradually corroded and irregularities become large. As a result, the number of particles generated by scraping the sample to be adsorbed increases, and the number of ceramic particles generated due to the lack of the convex portions of the ceramic also increases, which greatly reduces the yield of the device to be manufactured. There was a problem.

The present invention has been made in view of the above problems, and can reduce the number of particles generated when a sample to be adsorbed is desorbed or the like, thereby lowering the yield of a device manufactured. It is an object of the present invention to provide an electrostatic attraction device capable of suppressing the pressure.

[0010]

Means for Solving the Problems The present invention has been made to solve the above-mentioned problems, and the invention described in claim 1 of the present invention is characterized by covering with an insulating dielectric layer made of an electrically insulating ceramic. Voltage is applied to the conductor electrode
In an electrostatic attraction device for electrostatically adsorbing a sample on the insulating dielectric layer, at least the surface of the insulating dielectric layer at which the sample is adsorbed has a chemical vapor deposition method (hereinafter, referred to as a CVD method). The present invention provides an electrostatic attraction device characterized by comprising a vapor-deposited layer formed by the method described in (1).

As described above, at least the surface of the insulating dielectric layer to which the sample is adsorbed (hereinafter, sometimes referred to as the adsorbed surface) is formed as a vapor-deposited layer by the CVD method.
The surface after corrosive wear when a highly corrosive fluorine-based gas is used has less irregularities and is more uniform than that produced by a sintering method. Therefore, the number of particles generated by the shaving of the sample (adsorbed object) can be reduced and the particles of the ceramic particles generated by lacking the projections of the unevenness can be reduced as compared with those made by the sintering method. Occurrence can be suppressed. Further, since the sintered body is covered with the CVD film, generation of dust and impurities from the sintered body can be prevented.

In this case, as described in claim 2, it is preferable that the suction surface of the insulating dielectric layer is a mirror surface. As described above, the particles cause a decrease in the yield of the device and the like, and the particles are attracted by the convex portions of the micro unevenness which is the surface roughness of the adsorption surface of the ceramic electrostatic adsorption device. This is caused by the bumps of the microscopic unevenness existing on the surface where the sample is adsorbed, and the projections of the sample are cut off.However, by making the adsorption surface of the insulating dielectric layer a mirror surface, This is because microscopic irregularities on the suction surface can be reduced, and the number of particles having a size that reduces the yield of the device can be reduced.

Furthermore, as described in claim 3, it is preferable that the adsorption surface of the insulating dielectric layer is a mirror surface having an average surface roughness Ra of 0.3 μm or less. This is because, in the latest devices, the line width of the pattern is often a quarter-micron size, and in such a case, particles of 0.3 μm or more pose a problem. Average surface roughness Ra (center line average roughness) 0.3
This is because the number of particles having a problematic size can be reduced by using a mirror surface of μm or less.

Further, as described in claim 4 of the present invention, it is preferable that the crystallite size of the vapor deposition layer formed by the CVD method is less than 100 nm. in this way,
By setting the crystallite size to less than 100 nm, even if wear progresses and the ceramic particles fall off to form particles, it is difficult to form large particles that reduce the yield of the device.

In the electrostatic chuck according to the present invention, the thickness of the deposited layer formed by the CVD method is preferably 10 μm or more. This is because, in the CVD method, an abnormally grown portion (for example, a needle crystal) having a size of 10 μm called a nodule may be generated. Therefore, when the thickness of the deposited layer is less than 10 μm, the surface is polished to a mirror surface. In this case, the nodule portion easily becomes a pinhole and a sufficient life may not be obtained.

According to the present invention, as the electrically insulating ceramic which is the material of the insulating dielectric layer, aluminum oxide (Al ₂ O ₃ ), aluminum nitride (AlN), oxynitride Aluminum (AlO
_x N _y), silicon oxide (SiO _2), silicon nitride (Si ₃ N _4),
Silicon oxynitride (SiO _x N _y ), zirconium oxide (Zr
O ₂ ), titanium oxide (TiO ₂ ), titanium nitride (TiN),
Sialon (SiAl _x O _y N _z ), boron nitride (BN),
Or 2 selected from silicon and silicon carbide (SiC)
More than one kind of mixture can be used. Further, as described in claim 7, as a material of a deposition layer formed by a CVD method, aluminum oxide, aluminum nitride, aluminum oxynitride, boron nitride, boron carbonitride (BC _x N
_y ), aluminum boron nitride (AlB _x N _y ), or aluminum boron oxynitride (AlB _x O _y N _z ). Here, x, y, and z are arbitrary numbers.

Further, the electrostatic attraction device of the present invention may include a heater circuit built therein. Depending on the manufacturing process of a semiconductor device or the like, it may be necessary to heat the sample to be adsorbed. However, by incorporating a heater circuit, the sample can be efficiently heated.

[0018]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described, but the present invention is not limited to these embodiments.

FIG. 1 shows an example of the electrostatic chuck of the present invention.
FIG. 1 shows a schematic cross-sectional view thereof. Electrostatic adsorption device 1 of the present invention
Is a bipolar electrode 2 which is a conductor electrode, a plate-shaped insulating dielectric layer 3 covering the entire surface thereof, and a vapor deposition layer 4 formed on one side of the insulating dielectric layer 3 by a CVD method.
The plate portion 6 is adhered and fixed to the surface of the insulating dielectric layer 3 opposite to the suction surface via an adhesive layer 5. A voltage can be applied to the bipolar electrode 2 through a lead wire 7 from an external power supply. When a voltage is applied to the bipolar electrode 2 from an external power supply, the electrostatic attraction device 1 moves between a sample, for example, a semiconductor wafer and a surface of the vapor deposition layer 4 which are arranged opposite to the surface of the vapor deposition layer 4. An electrostatic force is generated to strongly hold the wafer by suction.

The electrostatic attraction device 1 of the present invention is characterized in that a vapor deposition layer 4 is provided on the attraction surface of the insulating dielectric layer 3, that is, the upper surface in FIG. .

In the present invention, the insulating dielectric layer 3
May be formed by the vapor deposition layer 4 by the CVD method, but considering the cost and the time required for formation, the portion of the adsorbing surface of the insulating dielectric layer 3 as in the example shown in FIG. Preferably, only the deposited layer 4 is formed by a CVD method, and most of the remaining insulating dielectric layer 3 is formed by a sintering method or a thermal spraying method. The vapor deposition layer 4 needs to be formed at least on the suction surface of the insulating dielectric layer 3, as long as it is formed on this portion, as long as there is no functional problem of the electrostatic suction device 1. The vapor deposition layer 4 may be formed on the surface of another portion, and the entire insulating dielectric layer 3 may be covered with the vapor deposition film 4 by the CVD method.

As described above, by forming at least the adsorption surface of the insulating dielectric layer 3 as a vapor-deposited layer by the CVD method, the surface after corrosion and abrasion when a highly corrosive fluorine-based gas is used is sintered. It has less unevenness and is more uniform than those made by the method. Therefore, the number of particles generated when the sample (adsorbed object) is shaved can be reduced as compared with the one made by the sintering method, and the ceramic particles generated due to the lack of the projections of the irregularities can be reduced. Occurrence can also be suppressed.

That is, when the adsorption surface of the insulating dielectric layer is formed by the sintering method, since it is formed by the sintering method, an auxiliary agent is contained and a highly corrosive fluorine-based gas is used. The use of a material has a problem that the auxiliary portion of the adsorption surface is corroded and worn first and the unevenness is increased since the auxiliary agent has lower corrosion resistance than the ceramic particles. When the irregularities become large in this way, there is a drawback that particles generated by contact with the sample at the time of desorption are promoted, and furthermore, the convex portions are chipped to generate particles of ceramics. Result. On the other hand, in the electrostatic adsorption device of the present invention, the adsorption surface of the insulating derivative layer is a vapor-deposited layer formed by a CVD method, and since it does not contain an auxiliary agent, it has high corrosion resistance, and even if it is corroded, Since the wear is uniform, there is no disadvantage such as that obtained by the sintering method.

In the present invention, it is preferable that the surface of the vapor deposition layer 4 be a mirror surface. Here, the mirror surface refers to a surface having a surface roughness Ra smaller than the wavelength of visible light, and is not necessarily required to be flat, and may have some undulations. With the mirror surface, the number of particles generated due to contact with the sample to be adsorbed can be further reduced. In other words, the particles are such that the protrusions of the microscopic unevenness existing on the suction surface of the insulating dielectric layer 3 of the electrostatic chuck made of ceramics are replaced with the convexities of the micro unevenness existing on the surface in contact with the electrostatic chuck of the sample. This occurs when the projections on the surface of the sample are scraped off when contacting the part. Therefore, by making the surface of the vapor deposition layer 4, that is, the adsorption surface a mirror surface, microscopic irregularities on the adsorption surface are reduced. As a result, the protrusions on the sample surface are less likely to be scraped, and the number of particles having a size that reduces the yield of the device can be reduced.

Further, according to the present invention, the deposited layer 4
Is preferably a mirror surface having an average surface roughness Ra of 0.3 μm or less, and more preferably a mirror surface having an average surface roughness of 0.1 μm or less. This is because, in the latest devices, the line width of the pattern is often a quarter-micron size, and in this case, the size of the particle that becomes a problem is 0.3 μm or more. Is set to an average surface roughness Ra of 0.3 or less, preferably 0.1 μm or less, thereby reducing the number of particles having a problematic size in the latest devices.

It is to be noted that, instead of forming a vapor deposition layer by the CVD method and forming a mirror surface as in the present invention, the adsorption surface of the insulating dielectric layer itself formed by the sintering method is made a mirror surface. There are the following problems. The insulating dielectric layer formed by the sintering method contains an auxiliary agent. If a highly corrosive fluorine gas is used, this auxiliary portion is corroded and worn before the ceramic particles. Therefore, if such a highly corrosive fluorine gas or the like is used even if the adsorption surface is a mirror surface, the surface of the adsorption surface will have large irregularities, and the effect of the mirror surface will be reduced. Therefore, the use of a mirror surface as the suction surface is particularly effective when the suction surface is formed as the vapor-deposited layer 4 by the CVD method as in the present invention.

In the present invention, the thickness of the deposition layer 4 is 10 μm.
m or more, and particularly preferably 20 μm or more. This is for the following reason.
In general, when a film is formed by a CVD method, an abnormally grown portion having a size of 10 microns called a nodule may be generated. Therefore, if the film thickness of the vapor deposition layer 4 is not more than 10 μm, preferably not more than 20 μm, the nodule portion easily becomes a pinhole when the surface is polished to a mirror surface, and a sufficient life may not be obtained.

In the present invention, the size of the crystallite of the vapor deposition layer 4 is preferably less than 100 nm.
This is because if the ceramic particles have such a size, even if the ceramic particles fall off and become particles, there is little problem due to the small diameter. Note that the size of the crystallite is determined by an X-ray diffraction method. The material of the vapor deposition layer 4 in the present invention is an electrically insulating ceramic and C
There is no particular limitation as long as a deposition layer can be formed by a VD method. For example, aluminum oxide, aluminum nitride, aluminum oxynitride, boron nitride, boron carbonitride, aluminum boron nitride, or aluminum boron oxynitride is used. The material of the insulating dielectric layer used, and the type of the sample to be adsorbed, etc.
What is necessary is just to select suitably from a point of a thermal expansion coefficient, avoidance of the cause of an impurity, etc.

The insulating dielectric layer 3 of the present invention includes aluminum oxide, aluminum nitride, aluminum oxynitride, silicon oxide, silicon nitride, silicon oxynitride, zirconium oxide, titanium oxide, titanium nitride, sialon, boron nitride, and A single substance selected from silicon carbide or a mixture of two or more kinds can be used. In the present invention,
Among them, it is preferable to use aluminum nitride. Various known dopants may be added to the ceramic as the raw material in order to adjust the volume resistivity of the obtained electrically insulating ceramic.

The volume resistivity of the insulating dielectric layer 3 has an appropriate value depending on the temperature to be used. For example, when the temperature of the semiconductor wafer to be adsorbed and held is 20 ° C. or lower, the insulating dielectric layer 3 Is 1 × 10 ⁸
When it is about 1 × 10 ¹³ Ω · cm, the electrostatic force is sufficiently exerted and no device damage occurs.

Further, when the temperature of the held semiconductor wafer is 20 ° C. or more, if the volume resistivity of the insulating dielectric layer 3 is about 1 × 10 ¹³ Ω · cm or more, the leakage current flowing through the wafer is It does not damage the circuit drawn on the wafer.

As described above, when the volume resistivity of the insulating dielectric layer 3 is set to an optimum value, a small leak current flows between the insulator and the wafer, and a strong electrostatic force is generated by the Johnsen-Rahbek effect. In this case, a good suction holding state can be obtained, and an electrostatic suction device having excellent response characteristics can be obtained.

The insulating dielectric layer 3 is a sample on which high dielectric ceramic powder, for example, barium titanate, lead titanate, zirconium titanate, PLZT (lead lanthanum zirconate titanate) or the like is adsorbed. For example, as long as it does not affect the semiconductor device, it may be added.

Inside the insulating dielectric layer 3, a bipolar electrode 2, which is a conductor electrode covered by the insulating dielectric layer 3, is formed. As a material of the conductor electrode,
One or more alloys selected from metals such as aluminum, iron, copper, silver, gold, titanium, tungsten, molybdenum and platinum, and conductive ceramics such as graphite, carbon, silicon carbide, titanium nitride and titanium carbide Alternatively, these mixed sintered bodies are used.

In order to form the conductor electrode, a screen printing method, a thermal spraying method, a photolithography method or a plating method can be used. In order to form the electric field for adsorption, the object to be adsorbed is used as one electrode, and the other electrode is of a monopolar type in which the other electrode is arranged in an insulating dielectric layer, or as shown in FIG. As described above, a bipolar type in which two electrodes are arranged in the insulating dielectric layer 3 can be used.

As an example of a method of manufacturing the electrostatic chuck according to the present invention, for example, a binder and a solvent are kneaded with ceramic powder to form a green sheet, and an electrode is formed by screen printing using a metal powder paste on one surface of the green sheet. Print. Next, another green sheet is superposed, integrated by pressing with a high-pressure press, sintered at a high temperature into a sintered body, and both surfaces of the sintered body are precisely polished to obtain an insulating dielectric layer. . This insulating dielectric layer is inserted into a CVD device,
An evaporation layer having a desired thickness is formed by a CVD method. This vapor-deposited layer can be obtained by polishing using, for example, free abrasive grains and making the surface a mirror surface.

As a method of making the surface of the deposition layer a mirror surface,
A vapor deposition layer may be directly formed on the insulating dielectric layer after sintering, and the surface thereof may be polished. However, after previously polishing the surface on which the insulating dielectric layer is to be vapor-deposited, the vapor deposition layer Is preferably formed, and the surface of the deposited layer is preferably mirror-polished.
This is because, if the surface of the insulating dielectric layer covering the vapor deposition layer is rough, the surface of the vapor deposition layer to be formed is also rough, and the generation of the nodules tends to be intense. Not only inefficient,
This is because the thickness becomes uneven, and the surface of the insulating dielectric layer may be exposed. When the surface on which the insulating dielectric layer is to be deposited is polished in advance to a mirror surface and then the deposited layer is formed, the surface of the deposited layer is also likely to be a mirror surface, and subsequent mirror polishing can be omitted.

As another example for obtaining the electrostatic attraction device of the present invention, a metal plate or a conductive ceramic sheet is prepared as an electrode, and insulating ceramic is sprayed on both surfaces thereof to a desired thickness to form a plate. After forming and polishing both surfaces with high precision, a vapor deposited layer may be formed.

In order to generate an electrostatic force in the electrostatic chuck 1 of the present invention, it is necessary to apply a voltage to the bipolar electrode 2. A hole leading to the electrode 2 is provided, and a lead wire 7 is wired to the electrode 2 from an external power supply. When the material of the electrode 2 can be soldered, such as copper, platinum, nickel-plated or gold-plated tungsten, etc., the lead wire 7 is connected to the electrode with solder having a melting point higher than the operating temperature of the electrostatic chuck. Is soldered. When the electrode 2 is made of a material that cannot be soldered, such as graphite, tungsten, titanium nitride, or the like, a threaded pin made of an alloy or the like that matches the coefficient of thermal expansion of the ceramic is passed through the hole, and silver is passed through the electrode. It has a brazing structure.

In the electrostatic attraction device 1 of the present invention, a plate portion 6 may be provided on the surface opposite to the attraction surface via an adhesive layer 5. The plate portion 6 is useful as a reinforcing plate for bonding as a reinforcing material first, since the electrostatic adsorption device 1 of the present invention is thin and easily broken, and then the plate portion 6 is generally used. Has good thermal conductivity and easy to radiate heat, and has a small coefficient of thermal expansion or a value similar to that of the insulating dielectric layer, distorting the electrostatic attraction part,
Those that do not give a warp or the like are preferable. Such a plate portion 6 is made of one type of ceramic selected from aluminum oxide, aluminum nitride, silicon nitride, zirconium oxide, titanium oxide, sialon, boron nitride, silicon carbide, or the like, or a mixed sintered body of two or more types. Can be formed from In addition, these ceramics plates and Al, Cu, T
A laminated plate obtained by integrating a metal plate such as i or an alloy plate such as stainless steel can also be used.

For the adhesive layer 5 for joining the insulating dielectric layer 3 and the plate portion 6, a thermosetting resin adhesive having high heat resistance is usually used. In particular, it is preferable to use a liquid material at normal temperature, because the insulating dielectric layer 3 and the plate portion 6 can be uniformly and easily bonded, and can be applied to all forms. For applying such a liquid adhesive, an application method such as spin coating, bar coating, or spray coating is used.

[0042]

The present invention will be described below with reference to examples. An insulating dielectric layer was prepared by embedding a tungsten electrode in a sintered aluminum nitride disk having a diameter of 150 mm and a thickness of 2 mm. The surface to be the adsorption surface was polished. This was placed at the center of a reaction vessel of a hot wall type chemical vapor deposition apparatus having an inner diameter of 200 mm. After the pressure in the reaction vessel was reduced and heated to 800 ° C., ammonia gas and aluminum trichloride gas were supplied at 500 cc / min and 100 cc / min, respectively, and the reaction was carried out at a pressure of 1 Torr for 1 hour. As a result, a 20-μm-thick deposited layer of aluminum nitride was formed on the disk of the insulating dielectric layer made of sintered aluminum nitride by the CVD method.

The surface of the deposited layer was polished by machining to 10 μm to obtain a mirror surface having a surface roughness Ra of 0.3 μm, thereby completing the electrostatic chuck of the present invention. The electrodes of this electrostatic chuck
A voltage of kV was applied, a 6-inch Si wafer was adsorbed, and the number of particles of 0.3 μm or more generated on the wafer was measured. The number was 1.1 × 10 ^3. The number of generated particles was smaller than that of tens of thousands / wafer on average.

The present invention is not limited to the above embodiment. The above embodiment is an exemplification, and has substantially the same configuration as the technical idea described in the claims of the present invention. Within the technical scope of

[0045]

According to the present invention, there is provided an electrostatic capacitor for applying a voltage to a conductive electrode covered with an insulating dielectric layer made of electrically insulating ceramics to electrostatically adsorb a sample on the insulating dielectric layer. The adsorption device is an electrostatic adsorption device in which at least the surface of the insulating dielectric layer to which a sample is adsorbed is formed by a vapor deposition layer formed by a chemical vapor deposition method. The contact between the surface and the sample reduces the number of particles generated by shaving the sample, and reduces the number of ceramic particles generated from the adsorption surface of the electrostatic adsorption device due to corrosion wear due to corrosive gas such as fluorine-based gas. Can also be reduced. Therefore, there is an effect that the yield of semiconductor devices and the like manufactured using the electrostatic chuck of the present invention is improved.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view showing an example of the electrostatic suction device of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Electrostatic adsorption device, 2 ... Bipolar electrode, 3 ... Insulating dielectric layer, 4 ... Vapor deposition layer, 5 ... Adhesive layer, 6 ... Plate part, 7 ···Lead.

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Kazuyoshi Tamura 2-13-1 Isobe, Annaka-shi, Gunma Prefecture Shin-Etsu Chemical Industry Co., Ltd.

Claims (8)

[Claims] An electrostatic attraction device for applying a voltage to a conductive electrode covered with an insulating dielectric layer made of electrically insulating ceramics to electrostatically adsorb a sample to said insulating dielectric layer. An electrostatic attraction device characterized in that at least a surface of the insulating dielectric layer at which a sample is adsorbed is formed of a vapor deposition layer formed by a chemical vapor deposition method. 2. The electrostatic chuck according to claim 1, wherein a surface of a portion of the insulating dielectric layer where the sample is sucked is a mirror surface. 3. The electrostatic chuck according to claim 2, wherein the surface of the insulating dielectric layer on which the sample is sucked is a mirror surface having an average surface roughness Ra of 0.3 μm or less. 4. The static electricity storage device according to claim 1, wherein a crystallite size of the deposition layer formed by the chemical vapor deposition method is less than 100 nm. Electroadsorption device. 5. The electrostatic adsorption according to claim 1, wherein a thickness of the vapor deposition layer formed by the chemical vapor deposition method is 10 μm or more. apparatus. 6. The electrically insulating ceramic is made of aluminum oxide, aluminum nitride, aluminum oxynitride, silicon oxide, silicon nitride, silicon oxynitride, zirconium oxide, titanium oxide, titanium nitride, sialon, boron nitride, and silicon carbide. The electrostatic adsorption device according to any one of claims 1 to 5, wherein the electrostatic adsorption device is selected from a single substance or a mixture of two or more kinds. 7. A deposition layer formed by the chemical vapor deposition method is made of aluminum oxide, aluminum nitride, aluminum oxynitride, boron nitride, boron carbonitride, aluminum boron nitride, or aluminum boron oxynitride. The electrostatic attraction device according to any one of claims 1 to 6, wherein 8. The electrostatic attraction device according to claim 1, further comprising a heater circuit.