JPH11135544A - Wire bonding tool - Google Patents

Wire bonding tool

Info

Publication number
JPH11135544A
JPH11135544A JP29918597A JP29918597A JPH11135544A JP H11135544 A JPH11135544 A JP H11135544A JP 29918597 A JP29918597 A JP 29918597A JP 29918597 A JP29918597 A JP 29918597A JP H11135544 A JPH11135544 A JP H11135544A
Authority
JP
Japan
Prior art keywords
wire
bonding tool
zirconia
groove
partially stabilized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP29918597A
Other languages
Japanese (ja)
Other versions
JP3450166B2 (en
Inventor
Shoji Hino
将司 日野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP29918597A priority Critical patent/JP3450166B2/en
Priority to US09/214,049 priority patent/US6274524B1/en
Priority to PCT/JP1998/001882 priority patent/WO1998049121A1/en
Publication of JPH11135544A publication Critical patent/JPH11135544A/en
Priority to US09/853,416 priority patent/US6602813B2/en
Application granted granted Critical
Publication of JP3450166B2 publication Critical patent/JP3450166B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H01L2224/78309—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/01006—Carbon [C]
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    • H01L2924/01024—Chromium [Cr]
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    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
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    • H01L2924/01—Chemical elements
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    • H01L2924/01074—Tungsten [W]

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a wire bonding tool where build-up is less even if the bonding of wire is repeated, static electricity is set free at appropriate speed and a chip and a crack do not exist in the edge part of a groove at the time of working the groove or the tip face of the wire bonding tool and at the time of bonding the wire. SOLUTION: At least a tip part 2 of a wire bonding tool 1 is formed of partially stabilized zirconia ceramic which contains more than one type in the oxide of Fe, Cr, Ni and Co in the range of 10-35 weight % as conductivity imparting agent, whose remaining part is substantially formed of zirconia that is partially stabilized by the stabilizer of Y2 O3 , CaO, MgO and CeO2 , whose destruction tenacity value of the sintered body is not less than 5.5 MPam<1/2> , and whose surface resistance value is 10<6> -10<9> Ω.cm.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、ワイヤを所定の接
合位置に圧着させるためのワイヤボンディングツールに
関するものであり、特に、磁気ディスク装置の製造工程
において、ＭＲヘッドやＧＭＲヘッド等の磁気ヘッドと
磁気ヘッド支持体間におけるワイヤのアッセンブリ、磁
気ヘッド支持体と信号処理部間におけるワイヤのアッセ
ンブリ、あるいは磁気ヘッドの厚み加工におけるヘッド
と測定器をつなぐワイヤのアッセンブリ等に好適なもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding tool for crimping a wire to a predetermined bonding position, and more particularly, to a magnetic head such as an MR head or a GMR head in a manufacturing process of a magnetic disk drive. It is suitable for assembling wires between the magnetic head supports, assembling wires between the magnetic head supports and the signal processing unit, or assembling wires connecting the head and the measuring instrument in processing the thickness of the magnetic head.

【０００２】[0002]

【従来の技術】従来、磁気ディスク装置の製造工程にお
いて、磁気ヘッドと磁気ヘッド支持体間におけるワイヤ
のアッセンブリ、磁気ヘッド支持体と信号処理部間にお
けるワイヤのアッセンブリ、あるいは磁気ヘッドの厚み
加工におけるヘッドと測定器をつなぐワイヤのアッセン
ブリ等において、ウェッジと呼ばれるワイヤボンディン
グツール（以下、ボンディングツールと称す。）が使用
されている。2. Description of the Related Art Conventionally, in a manufacturing process of a magnetic disk drive, a wire assembly between a magnetic head and a magnetic head support, a wire assembly between a magnetic head support and a signal processing unit, or a head in thickness processing of a magnetic head. A wire bonding tool called a wedge (hereinafter, referred to as a bonding tool) is used in an assembly of a wire for connecting a wire to a measuring instrument.

【０００３】図１に一般的なボンディングツール１の形
状を示すように、長手方向に対して平面的に切りかいた
略円柱状の本体部５と、該本体部５から先細り状に絞ら
れた先端部２とからなり、図２に示すように上記先端部
２の先端面３には金属ワイヤの圧着時における押圧力を
高めるための溝４が刻設されていた。As shown in FIG. 1, a general bonding tool 1 has a generally cylindrical main body 5 cut in a plane in a longitudinal direction, and is narrowed down from the main body 5 in a tapered shape. As shown in FIG. 2, a groove 4 for increasing the pressing force when crimping the metal wire was formed in the distal end surface 3 of the distal end 2 as shown in FIG.

【０００４】そして、このボンディングツール１によ
り、ワイヤを圧着させるには、まず、図４（ａ）のよう
に、ボンディングツール１でもってワイヤＷを所定の接
合位置まで案内し、図４（ｂ）のように所定の接合位置
にワイヤＷを押し付けたあと、ボンディングツール１で
もってワイヤＷに押圧力を加えながら、超音波振動を付
加することにより、図４（ｃ）のようにワイヤＷを所定
の接合位置に圧着させるようになっていた。In order to press the wire by the bonding tool 1, first, as shown in FIG. 4A, the wire W is guided to a predetermined joining position by the bonding tool 1, and FIG. After the wire W is pressed to a predetermined joining position as shown in FIG. 4A, ultrasonic pressure is applied to the wire W while applying a pressing force to the wire W with the bonding tool 1 so that the wire W is pressed as shown in FIG. At the joint position.

【０００５】また、従来よりこの種のボンディングツー
ル１は超硬合金により形成されていた。Conventionally, this kind of bonding tool 1 has been formed of a cemented carbide.

【０００６】[0006]

【発明が解決しようとする課題】ところが、超硬合金か
らなるボンディングツール１を用いて、ワイヤＷの圧着
を繰り返すと、溝４の表面にワイヤＷが付着する、所謂
ビルトアップが発生するために、ワイヤＷを圧着させる
ことができなくなるといった不都合があった。However, when the bonding of the wire W is repeated using the bonding tool 1 made of a cemented carbide, the wire W adheres to the surface of the groove 4, so-called build-up occurs. In addition, there is a disadvantage that the wire W cannot be pressed.

【０００７】そこで、ビルトアップが少なく、かつ導電
性を有するボンディングツール１として、チタン及びジ
ルコニウムから選択される少なくとも１種の元素の炭化
物、窒化物、硼化物からなる導電性付与剤を含有してな
るジルコニアセラミックスによって形成することが提案
されている（特開昭６４−４１２３２号公報）。In view of the above, the bonding tool 1 having a small build-up and having conductivity contains a conductivity-imparting agent comprising a carbide, nitride or boride of at least one element selected from titanium and zirconium. (Japanese Patent Laid-Open No. Sho 64-41232).

【０００８】このジルコニアセラミック製のボンディン
グツール１は、半導体装置の製造工程において、半導体
素子へのワイヤを圧着させるために提案されたものであ
り、静電気の発生に伴う塵埃の付着を防止するようにな
っていた。その為、体積固有抵抗値が１０-3〜１０-5Ω
・ｃｍと非常に小さいものであった。This zirconia ceramic bonding tool 1 has been proposed for crimping a wire to a semiconductor element in a manufacturing process of a semiconductor device, and is designed to prevent the adhesion of dust due to the generation of static electricity. Had become. Therefore, the volume resistivity is 10 -3 to 10 -5 Ω
-It was a very small cm.

【０００９】しかしながら、このボンディングツール１
を磁気ディスク装置の製造工程におけるワイヤＷのアッ
センブリに使用することは難しかった。However, this bonding tool 1
Was difficult to use for the assembly of the wire W in the manufacturing process of the magnetic disk drive.

【００１０】即ち、近年、高密度記録のために、磁気ヘ
ッドとして磁気抵抗素子を用いたＭＲヘッドやＧＭＲヘ
ッドが主流となりつつあった。このヘッドは磁界による
抵抗の変化を利用するもので、磁気抵抗素子に微小な電
流を流し、磁界の変化とともに変化する電気抵抗を検出
することによって読み取りを行うもので、上記ジルコニ
アセラミック製のボンディングツール１をＭＲヘッドや
ＧＭＲヘッドを備えた磁気ディスク装置の製造工程に使
用すると、ボンディングツール１の抵抗値が低すぎるた
めに静電気が一気に除去される結果、大気摩擦による超
高電圧の放電が発生する恐れがあり、圧着させるワイヤ
Ｗを介してヘッドに大電流が流れて磁気抵抗素子を破壊
してしまうといった課題があった。That is, in recent years, for high-density recording, an MR head and a GMR head using a magnetoresistive element as a magnetic head have become mainstream. This head uses a change in resistance due to a magnetic field, and reads by detecting a change in electric resistance that flows with a change in the magnetic field by passing a small current through the magnetoresistive element. When 1 is used in a manufacturing process of a magnetic disk drive provided with an MR head or a GMR head, static electricity is removed at a stretch because the resistance value of the bonding tool 1 is too low, and as a result, an ultra-high voltage discharge occurs due to atmospheric friction. There is a problem that there is a problem that a large current flows to the head via the wire W to be crimped and the magnetoresistive element is destroyed.

【００１１】また、ジルコニアセラミックスは一般的に
他のセラミックスと比較して破壊靱性値や強度が高いも
のの、導電性付与剤を多量に添加するとジルコニアセラ
ミックスの破壊靱性値や強度が低下するために、ボンデ
ィングツール１の先端面３への溝４の加工時（例えば、
ダイシング装置による研削加工）、あるいはワイヤＷの
圧着時において、溝４のエッジ部に欠けや割れを生じる
恐れがあった。そして、溝４のエッジ部に欠けや割れが
あると、ワイヤＷに加える押圧力を高めることができな
いためにワイヤＷの密着強度が低下し、ワイヤＷが剥離
し易かった。Although zirconia ceramics generally have higher fracture toughness and strength than other ceramics, the addition of a large amount of a conductivity-imparting agent lowers the fracture toughness and strength of zirconia ceramics. At the time of processing the groove 4 on the tip surface 3 of the bonding tool 1 (for example,
At the time of grinding using a dicing device) or crimping of the wire W, chipping or cracking may occur at the edge of the groove 4. If the edge of the groove 4 is chipped or cracked, the pressing force applied to the wire W cannot be increased, so that the adhesion strength of the wire W is reduced and the wire W is easily peeled.

【００１２】また、ワイヤＷの圧着部には溝４パターン
が転写されるのであるが、溝４のエッジ部に欠けや割れ
があると仕上がりあとの美観を損なうといった不都合も
あった。Further, the groove 4 pattern is transferred to the crimping portion of the wire W. However, if the edge portion of the groove 4 is chipped or cracked, there is an inconvenience that the appearance after finishing is impaired.

【００１３】さらに、上記ジルコニアセラミックスは、
導電性付与剤にチタンやジルコニウムの炭化物、窒化
物、硼化物を用いていることから、非酸化雰囲気中にて
焼成しなければならず、特殊な装置が必要になるととも
に、上記導電性付与剤は原料自体が高価であることから
製造コストが高くなるといった課題もあった。Further, the above zirconia ceramics
Since titanium, zirconium carbide, nitride, and boride are used as the conductivity-imparting agent, they must be fired in a non-oxidizing atmosphere, and a special device is required. However, there is also a problem that the production cost increases because the raw material itself is expensive.

【００１４】本発明はかかる事情に鑑みて成されたもの
であり、ワイヤのビルトアップが少なく、適度な導電性
を有するとともに、酸化雰囲気中での焼成が可能で安価
に製造できる高靱性の部分安定化ジルコニアセラミック
スによりワイヤボンディングツールを製作することで、
ＭＲヘッドやＧＭＲヘッドを備えた磁気ディスク装置の
製造工程において使用しても、ヘッドの磁気抵抗素子に
悪影響を与えることがなく、ワイヤＷを強固に圧着させ
ることができるとともに、長期間にわたって使えるよう
にすることにある。The present invention has been made in view of the above circumstances, and has a high toughness that can be manufactured inexpensively and can be fired in an oxidizing atmosphere while having a small build-up of a wire, having appropriate conductivity. By manufacturing a wire bonding tool using stabilized zirconia ceramics,
Even when used in the manufacturing process of a magnetic disk device having an MR head or a GMR head, the wire W can be firmly pressed without adversely affecting the magnetoresistive element of the head, and can be used for a long period of time. It is to make.

【００１５】[0015]

【課題を解決するための手段】即ち、本発明は、先端部
が先細り状をなし、その先端面にてワイヤを押圧して圧
着させるためのワイヤボンディングツールにおいて、少
なくとも先端部が、導電性付与剤としてＦｅ、Ｃｒ、Ｎ
ｉ、Ｃｏの酸化物のうち一種以上を１０〜３５重量％の
範囲で含有するとともに、残部が実質的にＹ2 Ｏ3 、Ｃ
ａＯ、ＭｇＯ、ＣｅＯ2 等の安定化剤により部分安定化
されたジルコニアからなり、その焼結体の破壊靱性値が
５．５ＭＰａｍ1/2 以上でかつ表面抵抗値が１０6 〜１
０9 Ω・ｃｍである部分安定化ジルコニアセラミックス
により形成したことを特徴とする。That is, the present invention relates to a wire bonding tool for forming a taper at a tip end and pressing a wire at the tip end surface to press-bond the wire. Fe, Cr, N as agents
One or more oxides of i and Co are contained in the range of 10 to 35% by weight, and the balance is substantially Y 2 O 3 , C
The sintered body is made of zirconia partially stabilized by a stabilizer such as aO, MgO, CeO 2 or the like, and the sintered body has a fracture toughness value of 5.5 MPam 1/2 or more and a surface resistance value of 10 6 to 1
Characterized by being formed by partially stabilized zirconia ceramics is 0 9 Ω · cm.

【００１６】[0016]

【発明の実施の形態】以下、本発明の実施形態を説明す
る。Embodiments of the present invention will be described below.

【００１７】図１は本発明に係るワイヤボンディングツ
ール１の一実施形態を示す図で、（ａ）は正面図、
（ｂ）は側面図であり、図２はワイヤボンディングツー
ル１の先端部２を拡大した図で、（ａ）は正面図、
（ｂ）は側面図である。FIG. 1 is a view showing one embodiment of a wire bonding tool 1 according to the present invention, wherein (a) is a front view,
(B) is a side view, FIG. 2 is an enlarged view of the tip 2 of the wire bonding tool 1, (a) is a front view,
(B) is a side view.

【００１８】このワイヤボンディングツール１（以下、
ボンディングツールと称す。）は、長手方向に対して平
面的に切りかいた略円柱状の本体部５と、該本体部５か
ら先細り状に絞られた先端部２とからなり、該先端部２
の先端面３には一方の側面から他方の側面まで貫通する
半円状の溝４を刻設してあり、ワイヤＷの圧着時におけ
る押圧力を高めるようになっている。なお、溝４のパタ
ーンとしてはざまざまなものがあり、例えば、図３
（ａ）のように二本の溝４を平行に刻設したものや、図
３（ｂ）のように溝４を碁盤目状に刻設したものなど、
ワイヤＷの圧着時における押圧力を高めるために少なく
とも一つの溝４を備えていれば良い。This wire bonding tool 1 (hereinafter, referred to as a wire bonding tool 1)
It is called a bonding tool. ) Includes a substantially cylindrical main body 5 cut in a plane with respect to the longitudinal direction, and a distal end portion 2 tapered from the main body portion 5.
A semicircular groove 4 penetrating from one side surface to the other side surface is formed in the tip surface 3 of the wire W to increase the pressing force when the wire W is crimped. Note that there are various patterns of the groove 4.
As shown in FIG. 3A, two grooves 4 are cut in parallel, or as shown in FIG. 3B, grooves 4 are cut in a grid pattern.
It is sufficient that at least one groove 4 is provided in order to increase the pressing force when the wire W is crimped.

【００１９】そして、このボンディングツール１により
ワイヤＷを圧着させるには、まず、図４（ａ）のよう
に、ボンディングツール１でもってワイヤＷを所定の接
合位置まで案内し、図４（ｂ）のように所定の接合位置
にワイヤＷを押し付けたあと、ボンディングツール１で
もってワイヤＷに押圧力を加えながら、超音波振動を付
加することにより、図４（ｃ）のようにワイヤＷを所定
の接合位置に強固に圧着させるようになっている。In order to crimp the wire W by the bonding tool 1, first, as shown in FIG. 4A, the wire W is guided to a predetermined joining position by the bonding tool 1, and FIG. After the wire W is pressed to a predetermined joining position as shown in FIG. 4A, ultrasonic pressure is applied to the wire W while applying a pressing force to the wire W with the bonding tool 1 so that the wire W is pressed as shown in FIG. Is firmly pressed to the joint position of

【００２０】また、このボンディングツール１は全体
を、導電性付与剤としてＦｅ、Ｃｒ、Ｎｉ、Ｃｏの酸化
物のうち一種以上を含有してなり、焼結体の破壊靱性値
が５．５ＭＰａｍ1/2 以上でかつ表面抵抗値が１０6 〜
１０9 Ω・ｃｍである部分安定化ジルコニアセラミック
スにより形成してある。The bonding tool 1 as a whole contains at least one of oxides of Fe, Cr, Ni and Co as a conductivity-imparting agent, and the sintered body has a fracture toughness value of 5.5 MPam 1. / 2 or more and the surface resistance value is 10 6 or more
It is formed of partially stabilized zirconia ceramics having a resistivity of 10 9 Ω · cm.

【００２１】部分安定化ジルコニアセラミックスの破壊
靱性値が５．５ＭＰａｍ1/2 未満であると、ボンディン
グツール１の先端面３への溝４の加工時（例えば、ダイ
シング装置による研削加工）あるいはワイヤＷの圧着時
において、溝４のエッジ部に欠けや割れが発生するため
に、そのようなボンディングツール１を用いてワイヤＷ
を圧着させても大きな押圧力を加えることができないた
めに密着強度が低くなり、ワイヤＷが剥がれ易くなると
ともに、ワイヤＷの圧着部には溝４パターンが転写され
るのであるが、溝４のエッジ部に欠けや割れがあると仕
上がりあとの美観を損なうからである。When the fracture toughness value of the partially stabilized zirconia ceramic is less than 5.5 MPam 1/2 , the groove 4 is formed on the tip surface 3 of the bonding tool 1 (eg, by a dicing device) or the wire W At the time of crimping, chipping or cracking occurs at the edge of the groove 4.
However, since a large pressing force cannot be applied to the wire W, the adhesive strength is reduced, the wire W is easily peeled off, and the groove 4 pattern is transferred to the wire W crimp portion. If the edges are chipped or cracked, the appearance after finishing is impaired.

【００２２】また、部分安定化ジルコニアセラミックス
の表面抵抗値を１０6 〜１０9 Ω・ｃｍするのは、１０
9 Ω・ｃｍより大きくなると、絶縁性が高すぎるために
静電気の除去効果が得られないからであり、逆に、１０
6 Ω・ｃｍより小さくなると、先端部２に溜まった静電
気が一気に逃げ易くなるため、大気摩擦による放電が発
生し易くなるからである。The reason why the surface resistance of the partially stabilized zirconia ceramic is set to 10 6 to 10 9 Ω · cm is 10 Ω · cm.
If it is larger than 9 Ω · cm, the effect of removing static electricity cannot be obtained because the insulating property is too high.
If the resistance is smaller than 6 Ω · cm, the static electricity accumulated in the distal end portion 2 easily escapes at a stretch, and discharge due to atmospheric friction is likely to occur.

【００２３】なお、より好ましい部分安定化ジルコニア
セラミックスの特性としては、破壊靱性値が６．０ＭＰ
ａｍ1/2 以上でかつ表面抵抗値が１０7 〜１０9 Ω・ｃ
ｍの範囲にあるものが良い。The more preferable properties of the partially stabilized zirconia ceramics are those having a fracture toughness of 6.0 MPa.
am 1/2 or more and the surface resistance value is 10 7 to 10 9 Ω · c
Those in the range of m are good.

【００２４】このような特性を持たせるためには、上記
導電性付与剤を１０〜３５重量％、好ましくは１０〜２
５重量％の範囲で含有するとともに、残部が実質的にＹ
2 Ｏ3 、ＣａＯ、ＭｇＯ、ＣｅＯ2 等の安定化剤によっ
て部分安定化されたジルコニアから構成されていること
が必要で、その焼結体中の全ジルコニア量に対する単斜
晶以外のジルコニア量が９０％以上、好ましくは９５％
以上であるものが良い。In order to provide such properties, the above-mentioned conductivity-imparting agent is added in an amount of 10 to 35% by weight, preferably 10 to 35% by weight.
5% by weight, with the balance being substantially Y
It is necessary to be composed of zirconia partially stabilized by a stabilizer such as 2 O 3 , CaO, MgO, CeO 2 , and the amount of zirconia other than monoclinic with respect to the total amount of zirconia in the sintered body is reduced. 90% or more, preferably 95%
The above is good.

【００２５】即ち、導電性付与剤の含有量が１０重量％
未満では抵抗値を下げる効果が小さく、表面抵抗値を１
０9 Ω・ｃｍ以下とすることができないからであり、逆
に、３５重量％より多くなると、焼結体の破壊靱性値を
５．５ＭＰａｍ1/2 以上とすることができず、溝４の加
工時やワイヤＷの圧着時において溝４のエッジ部に欠け
や割れが発生し易くなるとともに、表面抵抗値が１０6
Ω・ｃｍ未満にまで低下して大気摩擦による放電が発生
し易くなるからである。しかも、上記導電性付与剤は鉄
系金属の酸化物であるため、多量に含有させると磁気を
帯び易くなるといった不都合もあった。That is, the content of the conductivity-imparting agent is 10% by weight.
If it is less than 1, the effect of lowering the resistance value is small, and the surface resistance value is 1
Is because it is impossible or less 0 9 Ω · cm, conversely, becomes more than 35 wt%, the fracture toughness value of the sintered body can not be 5.5MPam 1/2 or more, of the groove 4 At the time of working or crimping of the wire W, chipping or cracking easily occurs at the edge of the groove 4 and the surface resistance value is 10 6
This is because the discharge is reduced to less than Ω · cm and discharge due to atmospheric friction easily occurs. In addition, since the conductivity-imparting agent is an oxide of an iron-based metal, if it is contained in a large amount, there is an inconvenience that the agent tends to be magnetized.

【００２６】一方、ジルコニアの結晶状態には立方晶、
正方晶、単斜晶の３つの状態があり、特に正方晶ジルコ
ニアは外部応力に対し、応力誘軌変態を受けて単斜晶ジ
ルコニアに相変態し、この時に生じる体積膨張によって
単斜晶ジルコニアの周囲に微小なマイクロクラックを形
成して外部応力の進行を阻止できるため、ジルコニアセ
ラミックスの破壊靱性値や強度等の機械的特性を高める
ことができる。そして、焼結体中における全ジルコニア
量に対する単斜晶以外のジルコニア量を９０％以上とす
れば、導電性付与剤を含有していることによる破壊靱性
値や曲げ強度等の劣化を抑えることができる。On the other hand, the crystalline state of zirconia is cubic,
There are three states, tetragonal and monoclinic. In particular, tetragonal zirconia undergoes stress-induced transformation to external stress and undergoes phase transformation to monoclinic zirconia. Since micro microcracks can be formed around the periphery to prevent the progress of external stress, mechanical properties such as fracture toughness and strength of the zirconia ceramic can be enhanced. When the amount of zirconia other than monoclinic is 90% or more of the total amount of zirconia in the sintered body, deterioration of the fracture toughness value and bending strength due to the inclusion of the conductivity-imparting agent can be suppressed. it can.

【００２７】なお、ジルコニアセラミックス中の全ジル
コニア量に対する単斜晶以外のジルコニア量を算出する
には、Ｘ線回折により単斜晶ジルコニアのＸ線回折強度
と、単斜晶ジルコニア以外のジルコニア（正方晶ジルコ
ニアと立方晶ジルコニア）のＸ線回折強度をそれぞれ測
定し、数１により算出することができる。In order to calculate the amount of zirconia other than monoclinic with respect to the total amount of zirconia in the zirconia ceramics, the X-ray diffraction intensity of monoclinic zirconia and the zirconia other than monoclinic zirconia (square X-ray diffraction intensities of cubic zirconia and cubic zirconia) are measured, respectively, and can be calculated by Equation 1.

【００２８】[0028]

【数１】 (Equation 1)

【００２９】さらに、上記ジルコニアセラミックスに
は、焼成温度抑制剤としてＣａ、Ｋ、Ｎａ、Ｍｇ、Ｚ
ｎ、Ｓｃなどの酸化物を３重量％以下の範囲で含有する
こともできる。これらの焼成温度抑制剤は、低温での焼
結を可能とするためジルコニア及び導電性付与剤の粒成
長を抑えることができ、破壊靱性値は勿論のこと、曲げ
強度や硬度等の機械的特性を高めることができる。Further, the above zirconia ceramics may contain Ca, K, Na, Mg, Z
An oxide such as n or Sc may be contained in a range of 3% by weight or less. These sintering temperature suppressors enable sintering at a low temperature, which can suppress the grain growth of zirconia and the conductivity-imparting agent, as well as mechanical properties such as flexural strength and hardness, as well as fracture toughness values. Can be increased.

【００３０】なお、残部が実質的にジルコニアからなる
とは、上記導電性付与剤以外の他の成分は殆どがジルコ
ニアからなり、他の成分を含んでいたとしても不可避不
純物と焼成温度抑制剤を３重量％以下の範囲で含む以外
は他の成分を積極的に添加していないことを指す。The phrase that the balance substantially consists of zirconia means that most of the components other than the above-mentioned conductivity-imparting agent consist of zirconia. It indicates that other components are not positively added except that they are contained in the range of not more than% by weight.

【００３１】また、圧着時におけるワイヤＷのビルトア
ップを抑えるとともに、焼結体の機械的特性を高め、溝
４のエッジ部における欠けや割れを防ぐためには、ジル
コニアの平均結晶粒子径を０．２〜０．５μｍとするこ
とが良い。これはジルコニアの平均結晶粒子径が０．５
μｍより大きくなると、破壊靱性値や硬度等の機械的特
性が大きく低下するとともに、溝４の加工後における面
粗さが粗くなり過ぎるためにワイヤＷのビルトアップが
発生し易くなるからである。なお、下限値を０．２μｍ
未満としたのは、０．２μｍとすることは製造上難しい
からである。In order to suppress the build-up of the wire W during crimping, to improve the mechanical properties of the sintered body, and to prevent chipping or cracking at the edge of the groove 4, the average crystal grain diameter of zirconia is set to 0. The thickness is preferably 2 to 0.5 μm. This is because the average crystal particle size of zirconia is 0.5
If it is larger than μm, mechanical properties such as fracture toughness and hardness are greatly reduced, and the surface roughness after processing of the groove 4 becomes too rough, so that the wire W is likely to build up. The lower limit is 0.2 μm
The reason why it is less than 0.2 μm is that it is difficult to make the thickness 0.2 μm in manufacturing.

【００３２】さらに導電性付与剤の平均結晶粒子径が大
き過ぎても部分安定化ジルコニアセラミックスの破壊靱
性値や曲げ強度等の機械的特性を低下させるため、５μ
ｍ以下、好ましくは３μｍ以下とすることが良い。Further, even if the average crystal particle diameter of the conductivity-imparting agent is too large, the partially stabilized zirconia ceramics may deteriorate mechanical properties such as fracture toughness and bending strength.
m or less, preferably 3 μm or less.

【００３３】かくして本発明のボンディングツール１
は、先端面３への溝４の加工時あるいは圧着の繰り返し
において溝４のエッジ部に欠けや割れを生じることがな
く、また、ワイヤＷのビルトアップも少ないために、長
期使用が可能であるとともに、静電気が発生したとして
も徐々に逃がすことができるため、大気摩擦による放電
の発生がなく、導通短絡による取り扱い不良事故を防ぐ
ことができ、さらには非磁性であることから磁気を帯び
ることもない。Thus, the bonding tool 1 of the present invention
Does not cause chipping or cracking at the edge of the groove 4 during processing of the groove 4 on the tip end surface 3 or during repetition of pressure bonding, and has little build-up of the wire W, so that it can be used for a long time. At the same time, even if static electricity is generated, it can be gradually released, so there is no discharge due to atmospheric friction, it can prevent mishandling accidents due to conduction short-circuit, and because it is non-magnetic, it can be magnetized. Absent.

【００３４】その為、本発明のボンディングツール１を
ＭＲヘッドやＧＭＲヘッドを備えた磁気ディスク装置の
製造工程に用いても、ヘッドの磁気抵抗素子に悪影響を
及ぼすことなく、ワイヤＷを所定の接合位置に強固に圧
着させることができるとともに、ワイヤＷの圧着面には
ボンディングツール１の溝パターンが転写され、見た目
にも美しい仕上げ面とすることができる。Therefore, even when the bonding tool 1 of the present invention is used in a manufacturing process of a magnetic disk drive having an MR head or a GMR head, the wire W can be bonded to a predetermined position without adversely affecting the magnetoresistive element of the head. It is possible to firmly press the wire W at the position, and the groove pattern of the bonding tool 1 is transferred to the press-bonded surface of the wire W, so that the finished surface is also beautiful in appearance.

【００３５】次に、図１に示すボンディングツール１の
製造方法について説明する。Next, a method of manufacturing the bonding tool 1 shown in FIG. 1 will be described.

【００３６】まず、ＺｒＯ2 粉末に対し、安定化剤とし
てＹ2 Ｏ3 、ＣａＯ、ＭｇＯ、ＣｅＯ2 を所定の範囲で
添加する。例えば、Ｙ2 Ｏ3 についてはＺｒＯ2 に対し
３〜９ｍｏｌ％の範囲で、ＣａＯについてはＺｒＯ2 に
対し８〜１２ｍｏｌ％の範囲で、ＭｇＯについてはＺｒ
Ｏ2 に対し１６〜２６ｍｏｌ％の範囲で、ＣｅＯ2 につ
いては１０〜１６ｍｏｌ％の範囲でそれぞれ添加すれば
良く、これらの範囲で添加すればジルコニアを部分安定
化することができる。なお、安定化剤は粉末の状態で添
加する以外に、予め共沈法などによりＺｒＯ2 粉末中に
所定の範囲で固溶させても良い。First, Y 2 O 3 , CaO, MgO and CeO 2 are added as a stabilizer to the ZrO 2 powder in a predetermined range. For example, in the range of 3～9Mol% to ZrO 2 for Y 2 O 3 in the range of 8～12Mol% to ZrO 2 for CaO, for MgO Zr
In O 2 to the range of 16~26mol%, for CeO 2 may be added each in the range of 10~16mol%, it can be partially stabilized zirconia be added in these ranges. In addition to adding the stabilizer in the form of a powder, the stabilizer may be previously dissolved in the ZrO 2 powder in a predetermined range by a coprecipitation method or the like.

【００３７】また、導電性付与剤としては、Ｆｅ
2 Ｏ3 、Ｃｒ2 Ｏ3 、ＮｉＯ、Ｃｏ3 Ｏ4のうち一種以
上を１０〜３５重量％添加する。なお、焼成温度を下げ
るためにＣａ、Ｋ、Ｎａ、Ｍｇ、Ｚｎ、Ｓｃなどの酸化
物を３重量％以下の範囲で添加しても良い。Further, as the conductivity-imparting agent, Fe
One or more of 2 O 3 , Cr 2 O 3 , NiO and Co 3 O 4 are added in an amount of 10 to 35% by weight. Note that oxides such as Ca, K, Na, Mg, Zn, and Sc may be added in a range of 3% by weight or less in order to lower the firing temperature.

【００３８】そして、これらの粉末を調合し、粉末プレ
ス成形法や射出成形法等の公知のセラミック成形手段に
て所定の形状に成形したあと、得られた成形体を焼成す
るのであるが、導電性付与剤が酸化物であることから酸
化雰囲気中で焼成することができる。Then, these powders are blended, molded into a predetermined shape by a known ceramic molding means such as a powder press molding method or an injection molding method, and then the obtained molded body is fired. Since the property imparting agent is an oxide, it can be fired in an oxidizing atmosphere.

【００３９】具体的には酸化雰囲気中にて１４５０〜１
５５０℃の温度で１〜数時間焼成すれば良く、焼成温度
抑制剤を添加したものにおいては、酸化雰囲気中にて１
３５０〜１４５０℃の温度で１〜数時間焼成すれば良
い。Specifically, 1450 to 1 in an oxidizing atmosphere
It may be fired at a temperature of 550 ° C. for one to several hours.
What is necessary is just to bake at 350-1450 degreeC for 1 to several hours.

【００４０】このような条件にて焼成すれば、焼結体中
における全ジルコニア量に対する単斜晶以外のジルコニ
ア量を９０％以上とすることができ、破壊靱性値５．５
ＭＰａｍ1/2 以上、曲げ強度７００ＭＰａ以上を有する
部分安定化ジルコニアセラミックスを得ることができ
る。By firing under such conditions, the amount of zirconia other than monoclinic crystal with respect to the total amount of zirconia in the sintered body can be 90% or more, and the fracture toughness value is 5.5.
A partially stabilized zirconia ceramic having a MPam 1/2 or more and a bending strength of 700 MPa or more can be obtained.

【００４１】なお、得られた部分安定化ジルコニアセラ
ミックスにＨＩＰ処理を施してさらに機械的特性を高め
ても良い。Incidentally, the obtained partially stabilized zirconia ceramics may be subjected to HIP treatment to further enhance the mechanical properties.

【００４２】しかるのち、得られたジルコニアセラミッ
クスを必要に応じて適宜研削や研磨加工を施したあと、
ダイシング装置によって先端面３の一方の側面から他方
の側面に貫通する溝４を形成することより、図１に示す
ボンディングツール１を得ることができる。Thereafter, the obtained zirconia ceramics is appropriately ground or polished as required,
The bonding tool 1 shown in FIG. 1 can be obtained by forming the groove 4 penetrating from one side surface of the tip end surface 3 to the other side surface by the dicing device.

【００４３】なお、図１にはボンディングツール１の全
体を部分安定化ジルコニアセラミックスにより形成した
例を示したが、例えば、ボンディングツール１の先端部
２を部分安定化ジルコニアセラミックスにより形成し、
本体部５をステンレス、アルミニウム合金、黄銅といっ
た金属や樹脂により形成し、両者を接合したものであっ
ても良いことは言うまでもない。また、図１においては
ウェッジと呼ばれるボンディングツール１を示しが、こ
れ以外に、先端部が先細り状をなし、ワイヤを挿通させ
る貫通孔を具備してなるキャピラリと呼ばれるボンディ
ングツールに適用することもできる。FIG. 1 shows an example in which the entire bonding tool 1 is formed of partially stabilized zirconia ceramics. For example, the tip 2 of the bonding tool 1 is formed of partially stabilized zirconia ceramics.
Needless to say, the main body 5 may be formed of a metal or resin such as stainless steel, an aluminum alloy, or brass, and joined together. Although FIG. 1 shows a bonding tool 1 called a wedge, the present invention can also be applied to a bonding tool called a capillary having a tapered end portion and a through hole through which a wire is inserted. .

【００４４】（実施例）ここで、導電性付与剤の材質及
び含有量を変えて、破壊靱性値、曲げ強度、ビッカース
硬度、表面抵抗値、磁性の有無等を異ならせた部分安定
化ジルコニアセラミックスによりボンディングツール１
を試作し、先端面３への溝４の加工時における破損（欠
けや割れ）の有無、静電気の除去度合いを測定した。(Examples) Here, partially stabilized zirconia ceramics having different toughness values, flexural strengths, Vickers hardness, surface resistance values, presence or absence of magnetism, etc., by changing the material and content of the conductivity imparting agent. By bonding tool 1
Were fabricated, and the presence or absence of breakage (chipping or cracking) and the degree of static electricity removal during processing of the groove 4 in the front end face 3 were measured.

【００４５】本実験では、破壊靱性値をＪＩＳ Ｒ１６
０７に基づいて測定し、曲げ強度については別に用意し
た各試料片を用いてＪＩＳ Ｒ１６０１に基づいて測定
した。ただし、曲げ強度において、ＪＩＳで規定する寸
法の試験片が得られない時は、ワイブル係数と有効体積
を加味した公知の手法によりＪＩＳに規定する試験片で
の曲げ強度に換算すれば良い。In this experiment, the fracture toughness value was measured according to JIS R16
07, and the flexural strength was measured based on JIS R1601 using separately prepared sample pieces. However, when a test piece having a dimension specified by JIS cannot be obtained in terms of bending strength, it may be converted into the bending strength of a test piece specified by JIS by a known method in consideration of the Weibull coefficient and the effective volume.

【００４６】また、ジルコニア焼結体中の全ジルコニア
量に対する単斜晶以外のジルコニア量は、Ｘ線回折によ
り各ジルコニアのＸ線回折強度を求め、前述の数１によ
り算出し、表面抵抗値については、シシド静電気製簡易
表面抵抗計（メガレスタＨＴ−３０１）によって測定す
るとともに、磁性の有無については、振動試料型磁力計
により残留磁束密度を測定し、１４ガウス以下であった
ものを「磁性なし」、１４ガウスより高かったものを
「磁性有り」として評価した。Further, the amount of zirconia other than monoclinic with respect to the total amount of zirconia in the zirconia sintered body is calculated by the above-mentioned formula 1 by obtaining the X-ray diffraction intensity of each zirconia by X-ray diffraction. Was measured with a simple surface resistance meter (Mishiresta HT-301) made of Shisido Electrostatics, and the presence or absence of magnetism was measured by measuring the residual magnetic flux density with a vibrating sample magnetometer. , And those higher than 14 Gauss were evaluated as "with magnetism".

【００４７】さらに、破損の有無については、０．３ｍ
ｍ×０．３ｍｍの先端面３に、０．０５ｍｍの幅を有す
る半円状の溝４をダイシング装置によって形成した２０
本のボンディングツール１のうち、溝４のエッジ部に欠
けや割れがなかったものの割合が８５％未満であったも
のを×、８５％以上であったものを○として評価し、静
電気の除去度合いについては、ボンディングツール１に
１０００Ｖの電圧を印加し、その先端より３ｃｍ離れた
部位での電圧とその降下時間を測定し、その測定部位で
の電圧値が１００Ｖとなるまでの降下時間が０．１〜２
０秒の間にあるものを○、それ以外のものを×として評
価した。Further, regarding the presence or absence of breakage, 0.3 m
A semicircular groove 4 having a width of 0.05 mm was formed on a tip surface 3 of mx 0.3 mm by a dicing apparatus.
Of the bonding tools 1, those with less than 85% of the edges of the groove 4 having no chipping or cracking were evaluated as x, and those with 85% or more as ○, and the degree of static electricity removal was evaluated. With respect to (3), a voltage of 1000 V is applied to the bonding tool 1, and a voltage at a position 3 cm away from the tip and a descent time thereof are measured. 1-2
The sample within 0 seconds was evaluated as ○, and the others were evaluated as ×.

【００４８】各ジルコニアセラミックスの組成と特性及
び結果は表１にそれぞれ示す通りである。Table 1 shows the composition, characteristics and results of each zirconia ceramic.

【００４９】なお、本実験に用いた部分安定化ジルコニ
アセラミックスは、いずれもＺｒＯ2 に対しＹ2 Ｏ3 を
３ｍｏｌ％添加して部分安定化したもので、導電性付与
剤として、Ｆｅ2 Ｏ3 、Ｃｒ2 Ｏ3 、ＮｉＯ、Ｃｏ3 Ｏ
4 のうちいずれか一種を添加した。The partially stabilized zirconia ceramics used in this experiment were all partially stabilized by adding 3 mol% of Y 2 O 3 to ZrO 2 , and Fe 2 O 3 was used as a conductivity-imparting agent. , Cr 2 O 3 , NiO, Co 3 O
Any one of 4 was added.

【００５０】[0050]

【表１】 [Table 1]

【００５１】この結果、Ｆｅ2 Ｏ3 の含有量が１０重量
％未満である試料Ｎｏ．１，２は、優れた機械的特性
（曲げ強度、破壊靱性値、ビッカース硬度）を有したい
たものの、表面抵抗値が１０9 Ω・ｃｍより高いために
静電気の除去効果が得られなかった。As a result, the sample No. having a Fe 2 O 3 content of less than 10% by weight. Samples Nos. 1 and 2 had excellent mechanical properties (flexural strength, fracture toughness, Vickers hardness), but were unable to remove static electricity because their surface resistance was higher than 10 9 Ω · cm.

【００５２】また、Ｆｅ2 Ｏ3 、ＮｉＯ、Ｃｏ3 Ｏ4 、
Ｃｒ2 Ｏ3 の含有量が３５重量％より多い試料Ｎｏ．６
〜８，10,12,14は、導電性付与剤の添加量が多すぎるた
めに機械的特性が大きく低下し、中でも破壊靱性値が
５．５ＭＰａｍ1/2 未満にまで低下した。その為、ボン
ディングツール１への溝４加工時おいて、破損が激しか
った。しかも、表面抵抗値が１０6 Ω・ｃｍ未満と低い
ために、静電気が一気に逃げてしまうといった問題もあ
った。Further, Fe 2 O 3 , NiO, Co 3 O 4 ,
Sample No. 3 having a Cr 2 O 3 content of more than 35% by weight. 6
In Nos. To 8, 10, 12, and 14, the mechanical properties were significantly reduced due to the excessive amount of the conductivity-imparting agent added, and in particular, the fracture toughness value was reduced to less than 5.5 MPam 1/2 . Therefore, when the groove 4 was formed on the bonding tool 1, the damage was severe. In addition, since the surface resistance is as low as less than 10 6 Ω · cm, there is a problem that static electricity escapes at a stretch.

【００５３】これに対し、Ｆｅ2 Ｏ3 、ＮｉＯ、Ｃｏ3
Ｏ4 、Ｃｒ2 Ｏ3 の含有量が１０〜３５重量％の範囲に
ある試料Ｎｏ．３〜５，９, 11,13 は、いずれも破壊靱
性値が５．５ＭＰａｍ1/2 以上であるため、ボンディン
グツール１への溝４加工時おいて、殆ど破損が見られな
かった。しかも、各材質は非磁性であり、表面抵抗値が
１０6 〜１０9 Ω・ｃｍの範囲にあるため、静電気を適
度な速度で逃がすことができ、優れた静電気除去効果も
有していた。On the other hand, Fe 2 O 3 , NiO, Co 3
Sample No. 3 in which the content of O 4 and Cr 2 O 3 is in the range of 10 to 35% by weight. In all of Nos. 3 to 5, 9, 11, and 13, the fracture toughness value was 5.5 MPam 1/2 or more, and almost no damage was observed when the groove 4 was formed in the bonding tool 1. In addition, since each material is non-magnetic and has a surface resistance in the range of 10 6 to 10 9 Ω · cm, static electricity can be released at an appropriate speed, and it has an excellent static electricity removing effect.

【００５４】この結果、導電性付与剤としてＦｅ、Ｎ
ｉ、Ｃｏ、Ｃｒの酸化物のうち一種以上を１０〜３５重
量％の範囲で含有するとともに、残部がＹ2 Ｏ3 により
部分安定化されたジルコニアからなり、その焼結体の破
壊靱性値が５．５ＭＰａｍ1/2以上でかつ表面抵抗値が
１０6 〜１０9 Ω・ｃｍである部分安定化ジルコニアセ
ラミックスによりボンディングツール１を製作すれば、
先端面３における溝４のエッジ部に破損がなく、かつ適
度なスピードで静電気を除去できることが判った。As a result, Fe, N
One or more oxides of i, Co, and Cr are contained in the range of 10 to 35% by weight, and the balance is made of zirconia partially stabilized by Y 2 O 3 , and the fracture toughness value of the sintered body is If the bonding tool 1 is manufactured from partially stabilized zirconia ceramics having a resistance value of 5.5 MPam 1/2 or more and a surface resistance value of 10 6 to 10 9 Ω · cm,
It was found that there was no damage at the edge of the groove 4 on the tip end surface 3 and that static electricity could be removed at an appropriate speed.

【００５５】[0055]

【発明の効果】以上のように、本発明によれば、先端部
が先細り状をなし、その先端面にてワイヤを押圧して圧
着させるためのワイヤボンディングツールにおいて、少
なくとも先端部を、導電性付与剤としてＦｅ、Ｃｒ、Ｎ
ｉ、Ｃｏの酸化物のうち一種以上を１０〜３５重量％の
範囲で含有するとともに、残部が実質的にＹ2 Ｏ3 、Ｃ
ａＯ、ＭｇＯ、ＣｅＯ2 等の安定化剤により部分安定化
されたジルコニアからなり、その焼結体の破壊靱性値が
５．５ＭＰａｍ1/2 以上でかつ表面抵抗値が１０6 〜１
０9 Ω・ｃｍである部分安定化ジルコニアセラミックス
により形成したことから、圧着の繰り返しにおいて静電
気が発生したとしても徐々に逃がすことができるため、
導通短絡による取り扱い不良事故を生じることがなく、
また、非磁性であることから磁気を帯びることもない。As described above, according to the present invention, in a wire bonding tool for pressing a wire by pressing a wire on a tip surface thereof, the tip portion is tapered, and at least the tip portion is made of a conductive material. Fe, Cr, N as imparting agents
One or more oxides of i and Co are contained in the range of 10 to 35% by weight, and the balance is substantially Y 2 O 3 , C
The sintered body is made of zirconia partially stabilized by a stabilizer such as aO, MgO, CeO 2 or the like, and the sintered body has a fracture toughness value of 5.5 MPam 1/2 or more and a surface resistance value of 10 6 to 1
From what has been formed by partially stabilized zirconia ceramics is 0 9 Ω · cm, it is possible to escape gradually even static electricity is generated in the repetition of the crimping,
No mishandling accidents due to conduction short circuits
Further, since it is non-magnetic, it does not take on magnetism.

【００５６】しかも、ワイヤのビルトアップが少なく、
また、ボンディングツールの先端面への溝の加工時ある
いはワイヤの圧着時に溝のエッジ部に欠けや割れを生じ
ることがないため、長期間にわたって使用することがで
きる。Moreover, there is little build-up of the wire,
In addition, the groove is not chipped or cracked at the edge of the groove when the groove is formed on the tip surface of the bonding tool or when the wire is pressed, so that the groove can be used for a long period of time.

【００５７】その為、本発明のボンディングツールをＭ
ＲヘッドやＧＭＲヘッドを備えた磁気ディスク装置の製
造工程に用いても、ヘッドの磁気抵抗素子に悪影響を及
ぼすことなく、ワイヤを所定の接合位置に強固に圧着さ
せることができるとともに、ワイヤの圧着面にはボンデ
ィングツールの溝パターンが転写され、見た目にも美し
い仕上げ面とすることができる。Therefore, the bonding tool of the present invention is
Even when used in a manufacturing process of a magnetic disk drive equipped with an R head or a GMR head, the wire can be firmly crimped to a predetermined joining position without adversely affecting the magnetoresistive element of the head, and the wire crimping can be performed. The groove pattern of the bonding tool is transferred to the surface, so that it is possible to provide a beautifully finished surface.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明に係るワイヤボンディングツールの一実
施形態を示す図であり、（ａ）は正面図、（ｂ）は側面
図である。FIG. 1 is a view showing one embodiment of a wire bonding tool according to the present invention, wherein (a) is a front view and (b) is a side view.

【図２】本発明に係るワイヤボンディングツールの先端
部を拡大した図であり、（ａ）は正面図、（ｂ）は側面
図である。FIGS. 2A and 2B are enlarged views of a tip portion of a wire bonding tool according to the present invention, wherein FIG. 2A is a front view and FIG. 2B is a side view.

【図３】（ａ）（ｂ）はワイヤボンディングツールの先
端面におけるさまざまな溝パターンを示す図である。FIGS. 3A and 3B are diagrams showing various groove patterns on a front end surface of a wire bonding tool.

【図４】（ａ）〜（ｃ）はワイヤボンディングツールに
よるワイヤの圧着工程を示す説明図である。FIGS. 4A to 4C are explanatory diagrams showing a wire crimping step using a wire bonding tool.

【符号の説明】[Explanation of symbols]

１・・・ワイヤボンディングツール ２・・・先端部
３・・・先端面 ４・・・溝 ５・・・本体部 Ｗ・・・ワイヤ1 Wire bonding tool 2 Tip
3 ... tip surface 4 ... groove 5 ... body W ... wire

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】先端部が先細り状をなし、その先端面にて
ワイヤを押圧して圧着させるためのワイヤボンディング
ツールにおいて、少なくとも上記先端部が、導電性付与
剤としてＦｅ、Ｃｒ、Ｎｉ、Ｃｏの酸化物のうち一種以
上を１０〜３５重量％の範囲で含有するとともに、残部
が実質的にＹ2 Ｏ3 、ＣａＯ、ＭｇＯ、ＣｅＯ2 等の安
定化剤により部分安定化されたジルコニアからなり、そ
の焼結体の破壊靱性値が５．５ＭＰａｍ1/2 以上でかつ
表面抵抗値が１０6 〜１０9 Ω・ｃｍである部分安定化
ジルコニアセラミックスにより形成したことを特徴とす
るワイヤボンディングツール。1. A wire bonding tool for forming a tapered tip portion and pressing a wire at its tip surface for pressure bonding, wherein at least the tip portion is made of Fe, Cr, Ni, Co as a conductivity-imparting agent. along with containing in the range of one or more 10 to 35 wt% of the oxide, the balance being substantially Y 2 O 3, CaO, MgO , made of partially stabilized zirconia, stabilizers such as CeO 2 A wire bonding tool formed of a partially stabilized zirconia ceramic having a sintered body having a fracture toughness value of 5.5 MPam 1/2 or more and a surface resistance value of 10 6 to 10 9 Ω · cm.
JP29918597A 1997-04-25 1997-10-30 Wire bonding tool Expired - Fee Related JP3450166B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP29918597A JP3450166B2 (en) 1997-10-30 1997-10-30 Wire bonding tool
US09/214,049 US6274524B1 (en) 1997-04-25 1998-04-22 Semiconductive zirconia sintering body and electrostatic removing member constructed by semiconductive zirconia sintering body
PCT/JP1998/001882 WO1998049121A1 (en) 1997-04-25 1998-04-22 Semiconductive zirconia sinter and destaticizing member comprising semiconductive zirconia sinter
US09/853,416 US6602813B2 (en) 1997-04-25 2001-05-10 Electrostatic removing member having semiconductive zirconia sintered body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29918597A JP3450166B2 (en) 1997-10-30 1997-10-30 Wire bonding tool

Publications (2)

Publication Number Publication Date
JPH11135544A true JPH11135544A (en) 1999-05-21
JP3450166B2 JP3450166B2 (en) 2003-09-22

Family

ID=17869251

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29918597A Expired - Fee Related JP3450166B2 (en) 1997-04-25 1997-10-30 Wire bonding tool

Country Status (1)

Country Link
JP (1) JP3450166B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005285959A (en) * 2004-03-29 2005-10-13 Tadahiro Omi Atmosphere-controlled bonding device, bonding method, and electronic device
JP2006013297A (en) * 2004-06-29 2006-01-12 Murata Mfg Co Ltd Ultrasonic joining apparatus
JP2006508011A (en) * 2002-11-22 2006-03-09 サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド Zirconia reinforced alumina ESD protective ceramic composition, component and method for forming the same
US7094718B2 (en) 2000-11-21 2006-08-22 Saint-Gobain Ceramics & Plastics, Inc. ESD dissipative ceramics
KR101970285B1 (en) * 2018-11-22 2019-04-18 에스피반도체통신(주) Wire bonding tool for semiconductor

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7094718B2 (en) 2000-11-21 2006-08-22 Saint-Gobain Ceramics & Plastics, Inc. ESD dissipative ceramics
US7579288B2 (en) 2000-11-21 2009-08-25 Saint-Gobain Ceramics & Plastics, Inc. Method of manufacturing a microelectronic component utilizing a tool comprising an ESD dissipative ceramic
JP2006508011A (en) * 2002-11-22 2006-03-09 サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド Zirconia reinforced alumina ESD protective ceramic composition, component and method for forming the same
JP2011068561A (en) * 2002-11-22 2011-04-07 Saint-Gobain Ceramics & Plastics Inc Ceramic composition for esd protection of zirconia-strengthened alumina, member and method for manufacturing the same
JP2005285959A (en) * 2004-03-29 2005-10-13 Tadahiro Omi Atmosphere-controlled bonding device, bonding method, and electronic device
JP4532957B2 (en) * 2004-03-29 2010-08-25 財団法人国際科学振興財団 Atmosphere-controlled bonding apparatus, bonding method, and electronic apparatus
JP2006013297A (en) * 2004-06-29 2006-01-12 Murata Mfg Co Ltd Ultrasonic joining apparatus
KR101970285B1 (en) * 2018-11-22 2019-04-18 에스피반도체통신(주) Wire bonding tool for semiconductor

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