JPH11134634A - Perpendicular magnetic record medium and its production - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce medium noise in recording and reproduction and to improve characteristics of reproduction output voltage to recording density by sequentially forming a soft magnetic film having a crystal structure with a body-centered cubic lattice as a space lattice and having designated lattice planes as oriented faces and a perpendicularly magnetized film having a crystal structure with a hexagonal close-packed lattice as a space lattice. SOLUTION: A soft magnetic film 13 of 'Sendust(R)' and a perpendicularly magnetized film 14 of CoCrTa consisting of 78 at.% Co, 19 at.% Cr and 3 at.% Ta and having a hexagonal close-packed lattice as a space lattice are successively formed on a glass substrate 12 to obtain the objective perpendicular magnetic record medium 11. The temp. of the substrate is set at 200 deg.C in forming the Sendust film, the Sendust film has lattice planes (200) as oriented faces and the half-width Δθ50 of the CoCrTa film is halved as compared with that at <200 deg.C temp. of the substrate when forming the Sendust film. The lattice matchability of the lattice planes (200) of the Sendust film and the lattice planes (001) of the CoCrTa film is satisfactory and high quality and high recording density are easily attained.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a perpendicular magnetic recording medium and a method of manufacturing the same, and more particularly, to one of storage devices such as a computer, and a magnetic disk for storing various data in a perpendicular magnetic recording system. The present invention relates to a perpendicular magnetic recording medium suitable for use in the present invention and a method for manufacturing the same.

[0002]

2. Description of the Related Art In recent years, as the speed of processing of personal computers, workstations, and the like has been increased, and the scale of processing data has been increased or the size of apparatuses has been reduced, one of these storage devices has been developed.
It is necessary to increase the capacity and size of the magnetic disk, which is one of the two types, and the magnetic disk is required to have a higher recording density. However, in order to increase the recording density with the horizontal magnetic recording method, which is widely used today and stores data by magnetizing the magnetic layer in the horizontal direction (film surface direction), the recording magnetization due to the miniaturization of the recording bit is increased. The problem of thermal fluctuation and the problem of high coercive force, which may exceed the recording capability of the recording head, occur. In other words, in order to realize a high recording density, the recording bits are inevitably reduced, but if the recording bits are too small, the influence of the heat energy generated during recording cannot be ignored, and the recording magnetization is easily reduced by heat. And the recorded magnetization may disappear. This phenomenon in which the recording magnetization easily moves due to heat is called thermal fluctuation of the recording magnetization. Also, when increasing the recording density by the horizontal magnetic recording method, it is inevitable to increase the coercive force of the recording medium, but since the recording capability of the recording head which must generate a magnetic field exceeding the coercive force is limited, the recording is limited. The coercive force of the medium cannot be too high. Therefore, there is a limit to increasing the recording density in the horizontal magnetic recording system.

Therefore, as a recording method capable of greatly improving the recording density of a magnetic disk while solving these problems, conventionally, a perpendicular magnetic recording method in which data is stored by magnetizing the magnetic layer in a perpendicular direction (film thickness direction). Recording methods are being studied. As one of the perpendicular magnetic recording media used in the perpendicular magnetic recording method, for example, “Journal of the Japan Society of Applied Magnetics, Vol.
8, No. 1, 1984, p. 17 ", a perpendicular magnetic recording medium having a two-layer film structure comprising a soft magnetic film having a high magnetic permeability and a perpendicular magnetic film having a high perpendicular anisotropy. There is. FIG. 47 is a cross-sectional view of a principal part showing a schematic structure of a conventional perpendicular magnetic recording medium 1 disclosed in the above-mentioned document. The perpendicular magnetic recording medium 1 is a soft magnetic film made of, for example, a permalloy (an alloy made of nickel (Ni) and iron (Fe)) on a substrate 2 made of a nonmagnetic material such as glass or aluminum (Al). (Backing layer) 3 and, for example, cobalt (C
o) and a perpendicular magnetization film 4 made of an alloy film containing chromium (Cr). However, in the perpendicular magnetic recording medium 1, since the perpendicular magnetic film 4 has poor vertical orientation indicating the degree to which the crystal grains have the C axis (vertical axis) as the easy axis of magnetization, the perpendicular magnetic film 4 itself has a perpendicular direction. The coercive force H _C小 さ く becomes small, and as a result, there is a disadvantage that the recording / reproducing characteristics are deteriorated, such as the data recording characteristics and the reproduction output are lowered.

In order to improve the vertical orientation of the perpendicular magnetization film, Japanese Patent Application Laid-Open No. 61-34722 discloses a permalloy film on a substrate made of a non-magnetic material such as a polyamide heat-resistant film. Perpendicular magnetic recording in which a soft magnetic film composed of a non-magnetic thin film composed of titanium (Ti), silicon oxide (SiO ₂ ) or amorphous, and a perpendicular magnetic film composed of a CoCr film are formed in this order. A medium is disclosed. JP-A-6-103555 discloses that a soft magnetic film composed of a permalloy film and Co, Cr and tantalum (Ta) are formed on a non-magnetic substrate such as Al. There is disclosed a perpendicular magnetic recording medium in which a perpendicular magnetization film composed of a CoCrTa film whose composition amount is changed in the film thickness direction is formed in order. CoC
It is known that an rTa film has a good BH loop angularity, a high vertical coercive force H _C 、, and a small index indicating crystallographic vertical orientation (“Masauki Sagoi eta”).
l., J. Appl. Phys. 67 (10), 15 May 1990 "). However, in any of the above-described perpendicular magnetic recording media, since the permalloy film is used as the soft magnetic film, the perpendicular orientation of the perpendicular magnetization film is not significantly improved. Also, JP-A-6-1035
In order to manufacture the perpendicular magnetic recording medium disclosed in Japanese Patent No. 55-155 by, for example, a sputtering method, it is necessary to prepare a plurality of types of targets according to the compositions of Co, Cr, and Ta in the thickness direction of the CoCrTa film. Along with the increase in material cost, a dedicated sputtering apparatus capable of appropriately switching a plurality of types of targets and performing sputtering is required.

On the other hand, Japanese Patent Application Laid-Open No. 57-36435 discloses a soft magnetic film made of a sendust (alloy composed of silicon (Si), Fe and Al) film on a substrate made of glass or the like. There is disclosed a perpendicular magnetic recording medium in which a film and a perpendicular magnetization film made of a CoCr film are sequentially formed. In this perpendicular magnetic recording medium, a sendust film having a crystal structure in which a body-centered cubic lattice (body-centered cubic lattice) is a space lattice is formed on a substrate with a lattice plane (110) plane, which is a crystal closest plane, as an orientation plane. Hexagonal closest packing (hcp; hexagonal closest packing)
packing) Co having a crystal structure with a lattice as a spatial lattice
The Cr film is formed with the lattice plane (001) plane (C plane, vertical direction) as the orientation plane. In addition, the applicant filed Japanese Patent Application No.
As disclosed in Japanese Patent Application No. 9-030523, a first soft magnetic film composed of a NiP film or an Fe film and a second soft magnetic film composed of a sendust film are formed on a glass substrate or a NiP / Al alloy substrate. A perpendicular magnetic recording medium has been proposed in which a soft magnetic film and a perpendicular magnetic film composed of a CoCrTa film or a CoCr film are sequentially formed.

[0006]

In the conventional perpendicular magnetic recording medium disclosed in the above-mentioned Japanese Patent Application Laid-Open No. 57-36435, the lattice plane (110) of the sendust film and the lattice plane (001) of the CoCr film are used. ) The lattice matching with the plane, that is, the compatibility at the interface between the sendust film and the CoCr film is not good, so that the crystallinity required for the perpendicular magnetization film to grow as a complete CoCr film having a desired ratio is disturbed. Although the film thickness of the initial growth layer becomes large, the thicker the initial growth layer, the larger the thickness of the crystal layer is. Further, since the lattice alignment between the lattice plane (110) of the sendust film and the lattice plane (001) of the CoCr film is not good, the perpendicular orientation of the CoCr film is poor. In addition, there is a problem that interference from adjacent recording bits increases and the reproduction output voltage attenuates quickly, that is, the characteristics of the reproduction output voltage with respect to the recording density are not good. On the contrary,
The conventional perpendicular magnetic recording medium disclosed in Japanese Patent Application No. 09-030523 needs to have a multilayer structure or an annealing treatment.
There is a disadvantage that the price of the perpendicular magnetic recording medium increases.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and can be manufactured at low cost and easily, can reduce medium noise at the time of recording and reproduction, and improve the characteristics of the reproduction output voltage with respect to the recording density. It is an object of the present invention to provide a perpendicular magnetic recording medium and a method for manufacturing the same.

[0008]

In order to solve the above-mentioned problems, a perpendicular magnetic recording medium according to the present invention has a crystal structure in which a body-centered cubic lattice is a space lattice on a substrate, A soft magnetic film having a lattice plane (200) as an orientation plane and a perpendicular magnetization film having a crystal structure having a hexagonal close-packed lattice as a spatial lattice are sequentially formed.

A perpendicular magnetic recording medium according to a second aspect of the present invention has a crystal structure in which a body-centered cubic lattice is a spatial lattice on a substrate, and is formed with a lattice plane (200) plane as an orientation plane. A crystal orientation control film, a soft magnetic film having a crystal structure with a body-centered cubic lattice as a spatial lattice, and having a lattice plane (200) oriented as an orientation plane, and a hexagonal close-packed lattice as a spatial lattice. And a perpendicular magnetization film having the above-described crystal structure.

According to a third aspect of the present invention, there is provided the perpendicular magnetic recording medium according to the second aspect, wherein the crystal orientation control film is a film made of any one element of vanadium, chromium, niobium, and molybdenum. It is characterized by being an alloy film composed of any two or more elements, or an alloy film composed of at least one element and at least one other element.

According to a fourth aspect of the present invention, there is provided the perpendicular magnetic recording medium according to any one of the first to third aspects, wherein the perpendicular magnetic film comprises cobalt and chromium having an atomic percentage of chromium of 30% or less. And an alloy film made of tantalum,
Alternatively, the alloy film is characterized by being an alloy film made of cobalt and chromium in which the atomic percentage of chromium is 30% or less.

According to a fifth aspect of the present invention, there is provided the perpendicular magnetic recording medium according to any one of the first to fourth aspects, wherein the soft magnetic film is made of iron, silicon, aluminum, titanium, ruthenium, cobalt, or nitrogen. It is characterized in that it is an alloy film composed of any two or more elements.

According to a sixth aspect of the present invention, there is provided the perpendicular magnetic recording medium according to any one of the first to fifth aspects, wherein the substrate is an alloy substrate made of nickel, phosphorus and aluminum, a glass substrate, a carbon substrate, Silicon substrate, or
It is a sapphire substrate.

Further, in the method of manufacturing a perpendicular magnetic recording medium according to the present invention, the body-centered cubic lattice is formed as a spatial lattice on the substrate while maintaining the substrate temperature at a predetermined temperature of 200 ° C. or more. The soft magnetic film having the modified crystal structure is placed on the lattice plane (20
0) a first step of forming a plane as an orientation plane, and a second step of forming a perpendicular magnetization film having a crystal structure with a hexagonal close-packed lattice as a space lattice on the soft magnetic film. It is characterized by.

According to a second aspect of the present invention, there is provided a method for manufacturing a perpendicular magnetic recording medium, comprising: maintaining a substrate temperature at a predetermined temperature on a substrate; A first step of forming a soft magnetic film having a crystal structure having a body-centered cubic lattice as a spatial lattice with the lattice plane (200) oriented as an orientation plane;
A second step of forming a perpendicular magnetization film having a crystal structure using a hexagonal close-packed lattice as a space lattice on the soft magnetic film.

According to a ninth aspect of the present invention, there is provided a method for manufacturing a perpendicular magnetic recording medium according to the seventh or eighth aspect, wherein the substrate temperature is maintained at a predetermined temperature on the substrate before the first step. In addition, a third step of forming a crystal orientation control film having a crystal structure using a body-centered cubic lattice as a spatial lattice with a lattice plane (200) plane as an orientation plane is performed.

According to a tenth aspect of the present invention, there is provided the method for manufacturing a perpendicular magnetic recording medium according to the ninth aspect, wherein the crystal orientation control film is a film made of any one element of vanadium, chromium, niobium, and molybdenum. , An alloy film composed of any two or more elements, or an alloy film composed of at least one element and at least one other element.

[0018] The eleventh aspect of the present invention is the seventh aspect of the present invention.
0, wherein the perpendicular magnetization film has an atomic percentage of chromium of 30% or less, an alloy film made of cobalt, chromium, and tantalum, or an atomic percentage of chromium. It is characterized in that it is an alloy film composed of 30% or less of cobalt and chromium.

The twelfth aspect of the present invention is the seventh aspect of the present invention.
1. The method of manufacturing a perpendicular magnetic recording medium according to claim 1, wherein the soft magnetic film is made of iron, silicon, aluminum,
It is characterized by being an alloy film composed of any two or more elements of titanium, ruthenium, cobalt and nitrogen.

The invention according to claim 13 is the invention according to claims 7 to 1
2. The method for manufacturing a perpendicular magnetic recording medium according to any one of items 2, wherein the substrate is an alloy substrate made of nickel, phosphorus, and aluminum, a glass substrate, a carbon substrate, a silicon substrate, or a sapphire substrate. And

[0021]

According to the structure of the present invention, the soft magnetic film is used alone or together with the crystal orientation control film to form the lattice plane (0) of the perpendicular magnetization film.
Since the lattice plane (200) having good lattice matching with the (01) plane is formed as the orientation plane, the perpendicular orientation of the perpendicular magnetization film is improved, and the thickness of the initial growth layer of the perpendicular magnetization film is reduced. Can be thin. The perpendicular magnetic recording medium has a three-layer structure at most. Further, according to the manufacturing method having the configuration of the present invention, it is not necessary to perform annealing or change the composition of each element constituting the perpendicular magnetization film in the film thickness direction. Therefore, the perpendicular magnetic recording medium can be manufactured inexpensively and easily, the medium noise during recording and reproduction can be reduced, and the characteristics of the reproduction output voltage with respect to the recording density can be improved.

[0022]

Embodiments of the present invention will be described below with reference to the drawings. The description will be specifically made using an embodiment. A. First Embodiment FIG. 1 is a sectional view showing a main part of a schematic structure of a perpendicular magnetic recording medium 11 according to a first embodiment of the present invention. The perpendicular magnetic recording medium 11 has a circular glass substrate 12 having a diameter of 2.5 inches.
On top, a soft magnetic film 13 composed of a sendust film and C
o: 78 at%, Cr: 19 at%, Ta: 3 at%, and a perpendicular magnetization film 14 composed of a CoCrTa film having a crystal structure having a hexagonal close-packed lattice as a spatial lattice.
Are sequentially formed. Here, “at%” refers to atomic percent, which is the number of atoms of a certain element when the number of atoms in the entire substance is set to 100.
In this case, Co has 78 atoms, Cr has 19 atoms,
Ta has 3 atoms. Hereinafter, a method of manufacturing the perpendicular magnetic recording medium 11 will be described. First, the glass substrate 1
A soft magnetic film 13 composed of a sendust film is formed on a substrate 2 by sputtering using a 6-inch FeSiAl target while maintaining the substrate temperature at a predetermined temperature in the range of 200 ° C. to 300 ° C. A 500 nm film is formed. The film formation conditions are as follows: an initial vacuum degree of 5 × 10 ⁻⁷ mTorr and an input power of 0.5 k
w, Argon (Ar) gas pressure 4 mTorr, deposition rate 3 nm / sec
And Next, on the soft magnetic film 13, Co: 78 at%,
Co having a composition of Cr: 19 at% and Ta: 3 at%
CoCr by sputtering using a CrTa target.
A perpendicular magnetization film 14 composed of a Ta film is formed to a thickness of 100 nm.

FIG. 2 shows the substrate temperature when the sendust film was formed, the crystal orientation of the sendust film, and the CoC.
The relation with the vertical orientation of the rTa film is shown. The crystal orientation of the Sendust film is measured using an X-ray diffraction method, and the numerical values shown in FIG. 2 are the diffraction intensities of the X-rays reflected from the lattice planes (110) and (200), respectively. (Unit: count / second, cps; counts per second). The fact that the X-ray diffraction intensity is high means that the crystal grains of the sendust film are oriented in the direction of the lattice plane. The vertical orientation of the CoCrTa film was also measured using an X-ray diffraction method.
When the X-rays are reflected by the lattice plane (002) plane (C plane, vertical direction) of the Ta film, the diffraction intensity is made incident on the surface of the CoCrTa film from the direction in which the diffraction intensity peaks, and the perpendicular magnetic recording medium is caused to be near the black angle. Then, the change in the diffraction intensity obtained when the sample is rotated with respect to the X-ray reflection angle (2θ) is measured. A curve representing the change in the diffraction intensity with respect to the X-ray reflection angle (2θ) is called a rocking curve, and the crystal orientation around a certain crystal axis (in this case, the crystal orientation around the C axis, that is, the vertical orientation) The numerical value shown in FIG. 2 is the angular width (half width) Δθ _{50 at} which the diffraction intensity is reduced to half in this locking curve (in FIG.
The half-width Δθ ₅₀ of the CrTa film is indicated, and this expression is used hereinafter. ). Therefore, as the value of the half width Δθ ₅₀ of the CoCrTa film is smaller, the crystal grains of the CoCrTa film are oriented in the C-axis direction, and the dispersion of the orientation is smaller.
That is, the vertical orientation is good.

As can be seen from FIG. 2, the substrate temperature when the sendust film was formed was changed from 100 ° C. to 200 ° C.
By setting the temperature to ゜ C or more, the sendust film changes the orientation from the lattice plane (110) plane to the lattice plane (200) plane. The half-width Δθ ₅₀ of the CoCrTa film is such that when the substrate temperature during the formation of the sendust film is 200 ° C. or higher, that is, when the sendust film is formed with the lattice plane (200) plane as the orientation plane, The substrate temperature at the time of film formation is less than 200 ° C., that is, almost halved as compared with the case where the sendust film is formed with the lattice plane (110) plane as the orientation plane. This indicates that the lattice matching between the lattice plane (200) of the sendust film and the lattice plane (001) of the CoCrTa film is good. That is,
The half-width Δθ ₅₀ of the CoCrTa film is obtained by forming the sendust film with the lattice plane (200) having good lattice matching with the lattice plane (001) of the CoCrTa film as an orientation plane.
Is almost halved, it is considered that the vertical orientation of the CoCrTa film is improved.

Here, FIGS. 3 to 5 show the recording / reproducing characteristics of the perpendicular magnetic recording medium manufactured by the above-mentioned manufacturing method, that is, the medium noise, the reproducing output voltage and the medium S with respect to the recording density.
/ N characteristics. 3 to 5, each curve a is
Curves representing the characteristics when a CoCrTa film is formed after forming a sendust film at a predetermined temperature within the range of 200 ° C. to 300 ° C. during the film formation. It is a curve showing the characteristic when a CoCrTa film is formed after forming a sendust film at a predetermined temperature of less than 200 ° C. The unit of recording density is kFRPI (kilo Fl
ux Reverse PerInch), for example, 1 kFRPI means a recording state of a digital signal having a magnetization reversal 1,000 times per inch on a perpendicular magnetic recording medium. These recording / reproducing characteristics are based on ID / MR (Inductive / Magnet) in which a recording ring head and a reproducing magnetoresistive element are combined.
The recording track width was 4 mm, the reproduction track width was 3 mm, the recording gap length was 0.4 mm, and the reproduction gap length was 0.32 mm. The evaluation was performed under the conditions that the amplitude of the recording current was 10 mA, the sense current was 12 mA, the peripheral speed was 12.7 m / s, the flying height was 45 nm, and the noise band band was 45 MHz.

According to FIG. 3, the substrate temperature during the formation of the sendust film is set in the range of 200 ° C. to 300 ° C. (curve a), and compared with the case where the substrate temperature is less than 200 ° C. (curve b). Thus, it can be seen that the medium noise is small and the noise characteristics are very excellent at all recording densities. This is because the sendust film is formed with the lattice plane (200) plane having good lattice matching with the lattice plane (001) plane of the CoCrTa film as an orientation plane, thereby reducing the thickness of the initial growth layer of the CoCrTa film. It is considered that the noise reduction was realized. Further, according to FIG. 4, the substrate temperature during the formation of the sendust film is set in the range of 200 ° C. to 300 ° C. (curve a), compared with the case where the substrate temperature is less than 200 ° (curve b). Thus, it can be seen that the decay of the reproduction output voltage with the increase in the recording density is slow, a high reproduction output voltage can be secured up to a high recording density, and it is easy to realize a high recording density. This means that the sendust film is formed by the lattice plane (00) of the CoCrTa film.
It is considered that the vertical orientation of the CoCrTa film is improved by forming the lattice plane (200) plane having good lattice matching with the 1) plane as the orientation plane, and the characteristics of the read output voltage with respect to the recording density are improved. . Further, according to FIG.
The substrate temperature at the time of Sendust film formation is 200 ° C. to 300 ° C.
By setting it within the range of {C (curve a), the medium S / N is better by 2 to 6 dB at all recording densities and higher quality and higher recording than in the case of less than 200 ° (curve b). It can be seen that the density can be achieved. That is, by forming the sendust film with the lattice plane (200) plane having good lattice matching with the lattice plane (001) plane of the CoCrTa film as the orientation plane, it is easy to realize high quality and high recording density.

B. Second Embodiment Next, a second embodiment will be described. The perpendicular magnetic recording medium of this example has a schematic structure similar to the structure shown in FIG. 1, and uses a 6 inch FeSi target for the manufacturing method, the composition of the perpendicular magnetic film, and the conditions for forming the soft magnetic film. The other components are the same as those of the first embodiment described above. The soft magnetic film is composed of a 500-nm-thick FeSi film and the 100-nm-thick CoCrTa film on a 2.5-inch-diameter circular glass substrate. And a perpendicular magnetization film formed in this order.

FIG. 6 shows the relationship between the substrate temperature when the FeSi film is formed, the crystal orientation of the FeSi film, and the vertical orientation of the CoCrTa film. The measurement method and the meaning of each numerical value shown in FIG. 6 are the same as in the first embodiment. As can be seen from FIG. 6, the substrate temperature when the FeSi film was
By changing the temperature from 0 ° C. to 200 ° C. or more, the FeSi film becomes a lattice plane (1) at the substrate temperature 200 ° C. as in the case of the sendust film of the first embodiment.
The orientation is changed from the 10) plane to the lattice plane (200) plane. Accordingly, the half width Δθ _{50 of the} CoCrTa film is also
As in the case of the above-mentioned first embodiment, it is almost halved. That is, by setting the substrate temperature to 200 ° C. or higher, the orientation plane of the FeSi film is shifted to the lattice plane (0%) of the CoCrTa film.
It is considered that the lattice matching with the (01) plane changed to the lattice plane (200) plane with good lattice orientation, and the vertical orientation of the CoCrTa film was improved.

Next, FIGS. 7 to 9 show the recording / reproducing characteristics of the perpendicular magnetic recording medium manufactured by the above-mentioned manufacturing method, that is, the medium noise, the reproducing output voltage and the medium S / V with respect to the recording density.
The characteristics of N are shown. 7 to 9, each curve a represents a characteristic in a case where a CoCrTa film is formed after forming an FeSi film at a predetermined substrate temperature in a range of 200 ° C. to 300 ° C. during film formation. The curves, each curve b, are characteristics representing the characteristics when a CoCrTa film is formed after forming an FeSi film at a predetermined substrate temperature of less than 200 ° C. during film formation. The head and other measurement conditions and evaluation conditions for measuring these recording / reproducing characteristics are the same as in the first embodiment. According to FIG. 7, the substrate temperature at the time of forming the FeSi film is 2
By setting it within the range of 00 ° C. to 300 ° C. (curve a), as compared with the case where the temperature is less than 200 ° (curve b),
It can be seen that the medium noise is small at all recording densities and the noise characteristics are very excellent. This is because the FeSi film is formed with the lattice plane (200) having good lattice matching with the lattice plane (001) of the CoCrTa film as an orientation plane, thereby reducing the thickness of the initial growth layer of the CoCrTa film. It is considered that the noise reduction was realized. Further, according to FIG. 8, the substrate temperature during the formation of the FeSi film is set in the range of 200 ° C. to 300 ° C. (curve a), compared with the case where the substrate temperature is less than 200 ° (curve b). Thus, it can be seen that the decay of the reproduction output voltage with the increase in the recording density is slow, a high reproduction output voltage can be secured up to a high recording density, and it is easy to realize a high recording density. This is Fe
The vertical orientation of the CoCrTa film is improved by forming the Si film as the orientation plane with the lattice plane (200) having good lattice matching with the lattice plane (001) of the CoCrTa film, and the reproduction output voltage is recorded. It is considered that the characteristics with respect to the density were improved. Further, according to FIG. 9, by setting the substrate temperature at the time of forming the FeSi film in the range of 200 ° C. to 300 ° C. (curve a), it is compared with the case where the substrate temperature is less than 200 ° (curve b). The medium S / N at all recording densities
Is 1 to 2 dB, which means that high quality and high recording density can be realized. That is, the FeSi film is formed of CoCrT
By forming the lattice plane (200) plane having good lattice matching with the lattice plane (001) plane of the a film as the orientation plane, it is easy to realize high quality and high recording density.

C. Third Embodiment Next, a third embodiment will be described. The perpendicular magnetic recording medium of this example has a schematic structure similar to that shown in FIG. 1, and uses a 6-inch FeAl target for the manufacturing method, the composition of the perpendicular magnetic film, and the conditions for forming the soft magnetic film. The other components are the same as those of the first embodiment described above. A soft magnetic film composed of a 500 nm thick FeAl film and a 100 nm thick CoCrTa film are formed on a circular glass substrate having a diameter of 2.5 inches. And a perpendicular magnetization film formed in this order.

FIG. 10 shows the relationship between the substrate temperature when the FeAl film is formed, the crystal orientation of the FeAl film, and the vertical orientation of the CoCrTa film. The measurement method and the meaning of each numerical value shown in FIG. 10 are the same as those in the first embodiment. FIG.
As can be seen from the figure, by changing the substrate temperature at the time of forming the FeAl film from 100 ° C. to 200 ° C. or more, similar to the case of the sendust film of the first embodiment,
At the substrate temperature of 200 ° C., the orientation of the FeAl film changes from the lattice plane (110) to the lattice plane (200), and accordingly, the half width Δθ of the CoCrTa film changes.
₅₀ is almost halved as in the case of the first embodiment.
That is, by setting the substrate temperature to 200 ° C. or higher, the lattice plane (200) in which the orientation plane of the FeAl film has good lattice matching with the lattice plane (001) plane of the CoCrTa film.
It is considered that the orientation changed to a plane, and the vertical orientation of the CoCrTa film was improved.

Next, FIGS. 11 to 13 show recording / reproducing characteristics of the perpendicular magnetic recording medium manufactured by the above-mentioned manufacturing method, that is, FIG.
6 shows characteristics of a medium noise, a reproduction output voltage, and a medium S / N with respect to a recording density. 11 to 13, each curve a indicates that the substrate temperature at the time of film formation is a CoCrTa film after a FeAl film is formed at a predetermined temperature within a range of 200 ° C. to 300 ° C.
Curves representing the characteristics when the film is formed, each curve b indicates that the substrate temperature at the time of film formation is reduced at a predetermined temperature of less than 200 ° C.
It is a curve showing the characteristic when a CoCrTa film is formed after forming a film. The head and other measurement conditions and evaluation conditions for measuring these recording / reproducing characteristics are the same as in the first embodiment. According to FIG. 11, by setting the substrate temperature during the formation of the FeAl film in the range of 200 ° C. to 300 ° C. (curve a), the substrate temperature is lower than 200 ° C. (curve b). It can be seen that the medium noise is small at all recording densities and the noise characteristics are very excellent. This is Fe
By forming the Al film with the lattice plane (200) plane having good lattice matching with the lattice plane (001) plane of the CoCrTa film as the orientation plane, the thickness of the initial growth layer of the CoCrTa film can be reduced. It is considered that low noise was realized. According to FIG. 12, by setting the substrate temperature at the time of forming the FeAl film in the range of 200 ° C. to 300 ° C. (curve a), it is compared with the case where the substrate temperature is less than 200 ° (curve b). Thus, it can be seen that the decay of the reproduction output voltage with the increase in the recording density is slow, a high reproduction output voltage can be secured up to a high recording density, and it is easy to realize a high recording density. This is because the FeAl film is replaced with the lattice plane (001) of the CoCrTa film.
It is considered that by forming the lattice plane (200) plane having good lattice matching with the plane as the orientation plane, the perpendicular orientation of the CoCrTa film was improved, and the characteristics of the read output voltage with respect to the recording density were improved. Further, according to FIG.
The substrate temperature at the time of forming the eAl film is set to 200 ° C. to 300 ° C.
(Curve a), the medium S / N is 2 to 5 dB better at all recording densities, and high quality and high recording density can be achieved as compared with the case where the angle is less than 200 ° (curve b). It can be seen that it can be realized. That is, the FeAl film is
By forming the lattice plane (200) plane having good lattice matching with the lattice plane (001) plane of the oCrTa film as the orientation plane, it is easy to realize high quality and high recording density.

D. Fourth Embodiment Next, a fourth embodiment will be described. The perpendicular magnetic recording medium of this example has a schematic structure similar to the structure shown in FIG. 1, and the manufacturing method and the composition of the perpendicular magnetic film are the same as those of the first embodiment.
The conditions for forming the soft magnetic film were set at a substrate temperature of 100 ° C. and a gas pressure of Ar gas of 1
Except that the gas pressure is set within a range of 0 to 30 mTorr, it is the same as the first embodiment described above, and is formed of a 500-nm thick sendust film on a circular glass substrate having a diameter of 2.5 inches. Soft magnetic film and 100 nm thick CoCr
And a perpendicular magnetization film made of a Ta film.

FIG. 14 shows A when the sendust film was formed.
Gas pressure of r gas, crystal orientation of Sendust film and Co
The relationship with the vertical orientation of the CrTa film is shown. The measurement method and the meaning of each numerical value shown in FIG. 14 are the same as those in the first embodiment. As can be seen from FIG. 14, the gas pressure of Ar gas when the sendust film was formed was changed from 40 mTorr to 3
By controlling the gas pressure to 30 mTorr or less by setting the pressure to 0 mTorr or less.
At the boundary, the sendust film changes orientation from the lattice plane (110) plane to the lattice plane (200) plane.
The half width Δθ ₅₀ of the oCrTa film is also almost halved as in the case of the first embodiment. That is, by setting the gas pressure of the Ar gas to 30 mTorr or less, the orientation plane of the sendust film changes to a lattice plane (200) plane having good lattice matching with the lattice plane (001) plane of the CoCrTa film.
It is considered that the vertical orientation of the oCrTa film was improved.

Next, FIGS. 15 to 17 show the recording / reproducing characteristics of the perpendicular magnetic recording medium manufactured by the above-described manufacturing method, that is, FIG.
6 shows characteristics of a medium noise, a reproduction output voltage, and a medium S / N with respect to a recording density. 15 to 17, each curve a represents a characteristic when a CoCrTa film is formed after a sendust film is formed at an Ar gas pressure of 10 mTorr during the film formation, and each curve b is a curve during the film formation. After forming a sendust film with the Ar gas pressure of 40 mTorr, CoCr
It is a curve showing the characteristic when a Ta film is formed. The head and other measurement conditions and evaluation conditions for measuring these recording / reproducing characteristics are the same as in the first embodiment. According to FIG. 15, the gas pressure of Ar gas at the time of forming the sendust film was 10 mT.
At orr (curve a), the medium noise is small at all recording densities, and the noise characteristics are very excellent as compared to the case of 40 mTorr (curve b). This is because the sendust film is formed with the lattice plane (200) plane having good lattice matching with the lattice plane (001) plane of the CoCrTa film as an orientation plane, thereby reducing the thickness of the initial growth layer of the CoCrTa film. It is considered that the noise reduction was realized. Also, according to FIG.
When the gas pressure of the Ar gas at the time of forming the sendust film is 10 mTorr (curve a), the decay of the reproduction output voltage with the increase in the recording density is slower and higher than when the gas pressure is 40 mTorr (curve b). It can be seen that a high reproduction output voltage can be secured up to the recording density, and it is easy to realize a high recording density. This means that the sendust film is formed by the lattice plane (00) of the CoCrTa film.
It is considered that the vertical orientation of the CoCrTa film is improved by forming the lattice plane (200) plane having good lattice matching with the 1) plane as the orientation plane, and the characteristics of the read output voltage with respect to the recording density are improved. . Further, according to FIG. 17, the gas pressure of the Ar gas at the time of forming the sendust film was set to 10 mTorr.
r (curve a), compared to the case of 40 mTorr (curve b), the medium S / N at all recording densities
Is 2 to 3 dB, which means that high quality and high recording density can be realized. That is, the Sendust film is made of CoCr.
By forming the lattice plane (200) plane having good lattice matching with the lattice plane (001) plane of the Ta film as the orientation plane, it is easy to realize high quality and high recording density.

E. Fifth Embodiment Next, a fifth embodiment will be described. The perpendicular magnetic recording medium of this example has a schematic structure similar to the structure shown in FIG. 1, and the manufacturing method, the composition of the perpendicular magnetization film, and the conditions for forming the soft magnetic film are 6 inches, such as Fe, Si, Al, Ruthenium (R
u) and a target made of Ti, except that a target made of Ti is used, and a 500-nm thick FeSiAlRuTi film is formed on a circular glass substrate having a diameter of 2.5 inches.
Soft magnetic film composed of a film and 100 nm thick CoCrT
and a perpendicular magnetization film made of an a film.

FIG. 18 shows the relationship between the gas pressure of Ar gas when the FeSiAlRuTi film is formed, the crystal orientation of the FeSiAlRuTi film, and the vertical orientation of the CoCrTa film. The measurement method and the meaning of each numerical value shown in FIG. 18 are the same as those in the first embodiment. As can be seen from the figure, the gas pressure of the Ar gas when the FeSiAlRuTi film was formed was changed from 40 mTorr to 30 mTorr or less, so that the FeS
The iAlRuTi film changes from the lattice plane (110) plane to the lattice plane (2).
00) plane, the orientation of CoC
The half-value width Δθ ₅₀ of the rTa film is almost halved as in the case of the first embodiment. That is, by setting the gas pressure of the Ar gas to 30 mTorr or less, the FeSiAl
The orientation plane of the RuTi film is the lattice plane (00) of the CoCrTa film.
It is considered that the lattice matching with the (1) plane changed to a lattice plane (200) plane with good lattice plane, and the vertical orientation of the CoCrTa film was improved.

Next, FIG. 19 to FIG. 21 show recording / reproducing characteristics of the perpendicular magnetic recording medium manufactured by the above-mentioned manufacturing method, that is, FIG.
6 shows characteristics of a medium noise, a reproduction output voltage, and a medium S / N with respect to a recording density. 19 to 21, each curve “a” represents F assuming that the gas pressure of Ar gas during film formation is 10 mTorr.
The curves representing the characteristics when the CoCrTa film is formed after the formation of the eSiAlRuTi film, and each curve b represents the Ar at the time of film formation.
FeSiAlRuTi with a gas pressure of 40 mTorr
It is a curve showing the characteristic when a CoCrTa film is formed after forming a film. The head and other measurement conditions and evaluation conditions for measuring these recording / reproducing characteristics are the same as in the first embodiment. According to FIG. 19, when the gas pressure of the Ar gas at the time of forming the FeSiAlRuTi film is set to 10 mTorr (curve a), the medium noise is smaller at all recording densities than when the gas pressure is set to 40 mTorr (curve b). It can be seen that the noise characteristics are very excellent. This is FeSi
Replace the AlRuTi film with the lattice plane (001) of the CoCrTa film.
It is considered that by forming the lattice plane (200) plane having good lattice matching with the plane as the orientation plane, the thickness of the initial growth layer of the CoCrTa film can be reduced, and low noise can be realized. . According to FIG. 20, the FeSiA
When the gas pressure of the Ar gas during the formation of the lRuTi film is 10 mTorr (curve a), the decay of the reproduction output voltage with the increase in the recording density is slower and higher than when the gas pressure is 40 mTorr (curve b). It can be seen that a high reproduction output voltage can be secured up to the recording density, and it is easy to realize a high recording density. This is because the FeSiAlRuTi film is made to have a lattice plane (20) having good lattice matching with the lattice plane (001) plane of the CoCrTa film.
By forming the 0) plane as an orientation plane, CoCrT
It is considered that the vertical orientation of the a film was improved, and the characteristics of the read output voltage with respect to the recording density were improved. Further, according to FIG. 21, by setting the gas pressure of the Ar gas at the time of forming the FeSiAlRuTi film to 10 mTorr (curve a),
Compared with the case of 40 mTorr (curve b), the medium S / N is better by 1 to 2 dB at all recording densities, and it can be seen that high quality and high recording density can be realized. That is, Fe
The SiAlRuTi film is formed on the lattice plane (00) of the CoCrTa film.
1) By forming the lattice plane (200) having good lattice matching with the plane as the orientation plane, it is easy to realize high quality and high recording density.

F. Sixth Embodiment Next, a sixth embodiment will be described. The perpendicular magnetic recording medium of this example has a schematic structure similar to the structure shown in FIG. 1, and the manufacturing method, the composition of the perpendicular magnetization film, and the film forming conditions of the soft magnetic film are 6 inches of Fe, Ta, and nitrogen ( A fourth embodiment is the same as the fourth embodiment except that a target made of N) is used. A soft magnetic film composed of a 500 nm-thick FeTaN film is formed on a circular glass substrate having a diameter of 2.5 inches. And a perpendicular magnetization film made of a CoCrTa film having a thickness of 100 nm.

FIG. 22 shows the A when the FeTaN film was formed.
Gas pressure of r gas, crystal orientation of FeTaN film and Co
The relationship with the vertical orientation of the CrTa film is shown. The measurement method and the meaning of each numerical value shown in FIG. 22 are the same as those in the first embodiment. As can be seen from FIG. 22, the gas pressure of the Ar gas when the FeTaN film was formed was changed from 40 mTorr to 3
By controlling the gas pressure to 30 mTorr or less by setting the pressure to 0 mTorr or less.
At the boundary, the orientation of the FeTaN film changes from the lattice plane (110) to the lattice plane (200).
The half width Δθ ₅₀ of the oCrTa film is also almost halved as in the case of the first embodiment. That is, by setting the gas pressure of the Ar gas to 30 mTorr or less, FeTa
The orientation plane of the N film changes to a lattice plane (200) plane having good lattice matching with the lattice plane (001) plane of the CoCrTa film, and C
It is considered that the vertical orientation of the oCrTa film was improved.

Next, FIGS. 23 to 25 show the recording / reproducing characteristics of the perpendicular magnetic recording medium manufactured by the above-mentioned manufacturing method, that is, FIG.
6 shows characteristics of a medium noise, a reproduction output voltage, and a medium S / N with respect to a recording density. In FIGS. 23 to 25, each curve “a” represents F at a gas pressure of Ar gas of 10 mTorr during film formation.
Curves representing the characteristics in the case where a CoCrTa film is formed after forming an eTaN film, and each curve b represents a CoCrTa film after forming an FeTaN film with an Ar gas pressure of 40 mTorr during film formation.
It is a curve showing the characteristic when a Ta film is formed. The head and other measurement conditions and evaluation conditions for measuring these recording / reproducing characteristics are the same as in the first embodiment. According to FIG. 23, the gas pressure of Ar gas at the time of forming the FeTaN film was 10 mT
At orr (curve a), the medium noise is small at all recording densities, and the noise characteristics are very excellent as compared to the case of 40 mTorr (curve b). This is because the FeTaN film is formed with the lattice plane (200) plane having good lattice matching with the lattice plane (001) plane of the CoCrTa film as an orientation plane, thereby reducing the thickness of the initial growth layer of the CoCrTa film. It is considered that the noise reduction was realized. According to FIG. 24,
When the gas pressure of the Ar gas at the time of forming the FeTaN film is 10 mTorr (curve a), the decay of the reproduction output voltage with the increase in the recording density is slower and higher than when the gas pressure is 40 mTorr (curve b). It can be seen that a high reproduction output voltage can be secured up to the recording density, and it is easy to realize a high recording density. This means that the FeTaN film is replaced with the lattice plane (00) of the CoCrTa film.
It is considered that the vertical orientation of the CoCrTa film is improved by forming the lattice plane (200) plane having good lattice matching with the 1) plane as the orientation plane, and the characteristics of the read output voltage with respect to the recording density are improved. . Furthermore, according to FIG. 25, the gas pressure of the Ar gas at the time of forming the FeTaN film was set to 10 mTorr.
r (curve a), compared to the case of 40 mTorr (curve b), the medium S / N at all recording densities
Is 1 to 4 dB, which means that high quality and high recording density can be realized. That is, the FeTaN film is made of CoCr.
By forming the lattice plane (200) plane having good lattice matching with the lattice plane (001) plane of the Ta film as the orientation plane, it is easy to realize high quality and high recording density.

G. Seventh Embodiment Next, a seventh embodiment will be described. The perpendicular magnetic recording medium of this example has a schematic structure similar to the structure shown in FIG. 1, and uses a 6-inch FeCo target for the manufacturing method, the composition of the perpendicular magnetic film, and the conditions for forming the soft magnetic film. The other features are the same as those of the fourth embodiment described above. The soft magnetic film is composed of a 500-nm-thick FeCo film and a 100-nm-thick CoCrTa film on a 2.5-inch-diameter circular glass substrate. And a perpendicular magnetization film formed in this order.

FIG. 26 is a graph showing the relationship between Ar and the FeCo film.
Gas pressure, crystal orientation of FeCo film and CoCr
The relationship with the vertical orientation of the Ta film is shown. Measurement method and FIG.
The meaning of each numerical value shown in FIG. 6 is the same as in the first embodiment. As can be seen from FIG. 26, the gas pressure of the Ar gas when the FeCo film was formed was changed from 40 mTorr to
rr or less, the FeCo film moves from the lattice plane (110) plane to the lattice plane (20) at the gas pressure of 30 mTorr.
0) The orientation is changed to the plane, and accordingly, CoCr
The half width Δθ ₅₀ of the Ta film is also almost halved as in the case of the first embodiment. That is, when the gas pressure of the Ar gas is set to 30 mTorr or less, the orientation plane of the FeCo film changes to the lattice plane (200) having good lattice matching with the lattice plane (001) of the CoCrTa film, and the CoCrT
It is considered that the vertical orientation of the a film was improved.

Next, FIGS. 27 to 29 show the recording / reproducing characteristics of the perpendicular magnetic recording medium manufactured by the above-described manufacturing method, that is, FIG.
6 shows characteristics of a medium noise, a reproduction output voltage, and a medium S / N with respect to a recording density. 27 to FIG. 29, each curve a represents F at a gas pressure of Ar gas of 10 mTorr during film formation.
Curves representing the characteristics when the CoCrTa film is formed after the formation of the eCo film, and each curve b represents the CoCrTa film after forming the FeCo film with the Ar gas pressure at the time of film formation being 40 mTorr.
It is a curve showing the characteristic at the time of forming a film. The head and other measurement conditions and evaluation conditions for measuring these recording / reproducing characteristics are the same as in the first embodiment. According to FIG. 27, the gas pressure of Ar gas at the time of forming the FeCo film was set to 10 mTorr.
It can be seen that the medium noise is small and the noise characteristics are very excellent at all recording densities as compared with the case (curve a) and the case of 40 mTorr (curve b). This is because the FeCo film is formed with a lattice plane (200) plane having good lattice matching with the lattice plane (001) plane of the CoCrTa film as an orientation plane, thereby reducing the thickness of the initial growth layer of the CoCrTa film. It is considered that the noise reduction was realized. According to FIG. 28,
When the gas pressure of the Ar gas at the time of forming the FeCo film is 10 mTorr (curve a), the decay of the reproduction output voltage with the increase in the recording density is slower and higher than when the gas pressure is 40 mTorr (curve b). It can be seen that a high reproduction output voltage can be secured up to the recording density, and it is easy to realize a high recording density. This is because the FeCo film is replaced with the lattice plane (001) of the CoCrTa film.
It is considered that by forming the lattice plane (200) plane having good lattice matching with the plane as the orientation plane, the perpendicular orientation of the CoCrTa film was improved, and the characteristics of the read output voltage with respect to the recording density were improved. Further, according to FIG.
When the gas pressure of the Ar gas at the time of forming the eCo film is set to 10 mTorr (curve a), the medium S / N is 3 to 3 m at all recording densities as compared with the case of 40 mTorr (curve b).
8 dB is good, which indicates that high quality and high recording density can be realized. In other words, the FeCo film is replaced with a lattice plane (20) having good lattice matching with the lattice plane (001) plane of the CoCrTa film.
By forming the 0) plane as an orientation plane, it is easy to realize high quality and high recording density.

H. Eighth Embodiment Next, an eighth embodiment will be described. FIG. 30 is a cross-sectional view of a principal part showing a schematic structure of a perpendicular magnetic recording medium 21 according to an eighth embodiment of the present invention. The perpendicular magnetic recording medium 21
A crystal orientation control film 23 composed of a vanadium (V) film having a crystal structure having a body-centered cubic lattice as a spatial lattice, on a circular glass substrate 22 having a diameter of 2.5 inches;
a soft magnetic film 24 composed of an i-film, Co: 78 at%,
Co having a composition of Cr: 19 at% and Ta: 3 at%
A perpendicular magnetization film 25 made of a CrTa film is sequentially formed. Hereinafter, the perpendicular magnetic recording medium 21
A method of manufacturing the device will be described. First, using a 6-inch V target on the glass substrate 22 by sputtering,
After maintaining the substrate temperature at 200 ° C., a crystal orientation control film 23 composed of a V film is formed to a thickness of 20 nm, and then the substrate temperature is adjusted to 100 ° C. by using a 6-inch FeSi target by sputtering. Is formed, a soft magnetic film 24 made of a FeSi film is formed to a thickness of 500 nm. The film forming conditions are the same as in the first embodiment. Next, on the soft magnetic film 24, Co: 78 at%, Cr: 19 at%, Ta: 3a
Using a CoCrTa target having a composition of t%, a perpendicular magnetization film 25 made of a CoCrTa film is formed to a thickness of 100 nm by a sputtering method.

FIG. 31 shows that the crystal orientation control film 23 has V
The crystal orientation of the FeSi film and the vertical orientation of the CoCrTa film with and without the film are shown. The measurement method and the meaning of each numerical value shown in FIG.
This is the same as the embodiment. As can be seen from FIG.
By forming a V film before forming a Si film, F
Even if the eSi film is formed while maintaining the substrate temperature at 100 ° C., the orientation changes from the lattice plane (110) plane to the lattice plane (200) plane, and accordingly, the half width Δθ of the CoCrTa film is changed. ₅₀ is significantly lower. That is, by providing the V film, the orientation surface of the FeSi film is changed to CoC.
It is considered that the lattice matching with the lattice plane (001) of the rTa film was changed to the lattice plane (200), and the vertical orientation of the CoCrTa film was improved. This is presumably because the V film is formed with the lattice plane (200) plane as the orientation plane, and the FeSi film is epitaxially grown on the orientation plane.

Next, FIG. 32 to FIG. 34 show the recording / reproducing characteristics of the perpendicular magnetic recording medium manufactured by the above manufacturing method, that is, FIG.
Medium noise with respect to recording density, reproduction output voltage and medium S
/ N characteristics. In these figures, each curve a is
A curve representing characteristics when the V film is provided, and each curve b is a curve representing characteristics when the V film is not provided. The head and other measurement conditions and evaluation conditions for measuring these recording / reproducing characteristics are the same as in the first embodiment. According to FIG. 32, when the V film is provided (curve a), the medium noise is small at all recording densities and the noise characteristics are very excellent as compared with the case where no V film is provided (curve b). You can see that. This is because the FeSi film has a lattice plane (20) having good lattice matching with the lattice plane (001) plane of the CoCrTa film.
By forming the 0) plane as an orientation plane, CoCrT
It is considered that the thickness of the initial growth layer of the a-film can be reduced, and the noise can be reduced. According to FIG. 33, by providing the V film (curve a), the decay of the reproduction output voltage with the increase in the recording density is slower and higher than when the V film is not provided (curve b). It can be seen that a high reproduction output voltage can be secured up to the recording density, and it is easy to realize a high recording density. This is because the FeSi film has a lattice plane (2) having good lattice matching with the lattice plane (001) plane of the CoCrTa film.
By forming the (00) plane as the orientation plane, CoCr
It is considered that the vertical orientation of the Ta film was improved, and the characteristics of the read output voltage with respect to the recording density were improved. further,
According to FIG. 34, by providing a V film (curve a),
Compared with the case where the V film was not provided (curve b), the medium S / N was good by 2 to 6 dB at all recording densities, and it can be seen that high quality and high recording density can be realized. That is, F
By forming the eSi film with the lattice plane (200) plane having good lattice matching with the lattice plane (001) plane of the CoCrTa film as the orientation plane, it is easy to realize high quality and high recording density.

I. Ninth Embodiment Next, a ninth embodiment will be described. The perpendicular magnetic recording medium of this example has a schematic structure similar to the structure shown in FIG. 30, and is formed on a circular glass substrate having a diameter of 2.5 inches.
It has a crystal structure with a body-centered cubic lattice as a spatial lattice, and has a Cr:
A crystal orientation control film composed of a CrNb film having a composition of 50 at% and niobium (Nb): 50 at%;
a soft magnetic film composed of an O film and Co: 78 at%, C
CoC having a composition of r: 19 at% and Ta: 3 at%
and a perpendicular magnetization film made of an rTa film. Hereinafter, a method for manufacturing the perpendicular magnetic recording medium will be described. First, a 6-inch CrNb target having a composition of Cr: 50 at% and Nb: 50 at% was formed on a glass substrate by a sputtering method and a CrNb film was formed while maintaining the substrate temperature at 200 ° C. After depositing a crystal orientation control film of 20 nm, 6
Using an inch FeCo target, a substrate temperature of 10
While maintaining the temperature at 0 ° C., a soft magnetic film made of a FeCo film is formed to a thickness of 500 nm. The film forming conditions are the same as in the first embodiment. Next, on the soft magnetic film, Co: 78 at
%, Cr: 19 at%, and Ta: 3 at% using a CoCrTa target having a composition of Co by sputtering.
A perpendicular magnetization film made of a CrTa film is formed to a thickness of 100 nm.

FIG. 35 shows that CrN was used as a crystal orientation control film.
The crystal orientation of the FeCo film and the vertical orientation of the CoCrTa film with and without the b film are shown, respectively. The measurement method and the meaning of each numerical value shown in FIG. 35 are the same as in the first embodiment. As can be seen from FIG.
By forming the CrNb film before forming the Co film, the FeCo film can be formed while maintaining the substrate temperature at 100 ° C. from the lattice plane (110) plane to the lattice plane (200).
The orientation has been changed in the plane, and accordingly, CoCrTa
The half width Δθ _{50 of the} film is significantly reduced. In other words, by providing the CrNb film, the orientation surface of the FeCo film changes to a lattice surface (200) having good lattice matching with the lattice (001) surface of the CoCrTa film, and
It is considered that the vertical orientation of the Ta film was improved. This is presumably because the CrNb film is formed with the lattice plane (200) plane as the orientation plane, and the FeCo film grows epitaxially on the orientation plane.

Next, FIGS. 36 to 38 show the recording / reproducing characteristics of the perpendicular magnetic recording medium manufactured by the above-described manufacturing method, that is, FIG.
6 shows characteristics of a medium noise, a reproduction output voltage, and a medium S / N with respect to a recording density. 36 to 38, each curve a is a curve representing a characteristic when a CrNb film is provided, and each curve b is a curve representing a characteristic when a CrNb film is not provided. The head and other measurement conditions and evaluation conditions for measuring these recording / reproducing characteristics are the same as in the first embodiment. According to FIG. 36, when the CrNb film was provided (curve a), no CrNb film was provided (curve b).
Media noise is smaller at all recording densities compared to
It can be seen that the noise characteristics are very excellent. this is,
By forming the FeCo film with the lattice plane (200) plane having good lattice matching with the lattice plane (001) plane of the CoCrTa film as the orientation plane, the thickness of the initial growth layer of the CoCrTa film can be reduced. It is considered that low noise was realized. Further, according to FIG. 37, the provision of the CrNb film (curve a) causes the reproduction output voltage to decay slowly with the increase in the recording density as compared with the case where the CrNb film is not provided (curve b). It can be seen that a high reproduction output voltage can be secured up to the recording density, and it is easy to realize a high recording density. This is because the vertical orientation of the CoCrTa film is improved by forming the FeCo film as the orientation plane with the lattice plane (200) having good lattice matching with the lattice plane (001) of the CoCrTa film, and the reproduction output is improved. It is considered that the characteristics of the voltage with respect to the recording density were improved. Further, according to FIG. 38, by providing a CrNb film (curve a), C
Compared with the case where the rNb film was not provided (curve b), the medium S / N was better by 1 to 4 dB at all recording densities, and it can be seen that high quality and high recording density can be realized. That is, the FeCo film is replaced with the lattice plane (001) of the CoCrTa film.
By forming the lattice plane (200) plane having good lattice matching with the plane as the orientation plane, it is easy to realize high quality and high recording density.

J. Tenth Embodiment Next, a tenth embodiment will be described. The perpendicular magnetic recording medium of this example has a schematic structure similar to the structure shown in FIG. 30, and has a crystal structure using a body-centered cubic lattice as a space lattice on a 2.5-inch-diameter circular glass substrate. Has, C
r: 80 at%, molybdenum (Mo): a crystal orientation control film composed of a CrMo film having a composition of 20 at%, a soft magnetic film composed of an FeAl film, and Co: 78 a
A perpendicular magnetization film composed of a CoCrTa film having a composition of t%, Cr: 19 at%, and Ta: 3 at% is formed in order. Hereinafter, a method for manufacturing the perpendicular magnetic recording medium will be described. First, a CrMo film was formed on a glass substrate using a 6-inch CrMo target having a composition of 80 at% Cr and 20 at% Mo by sputtering, while maintaining the substrate temperature at 200 ° C. After forming a crystal orientation control film to a thickness of 20 nm, a soft magnetic film composed of a FeAl film is formed to a thickness of 500 nm by sputtering using a 6-inch FeAl target while maintaining the substrate temperature at 100 ° C. I do. The film forming conditions are the same as in the first embodiment. Next, on the soft magnetic film, Co:
Using a CoCrTa target having a composition of 78 at%, Cr: 19 at%, and Ta: 3 at%, a perpendicular magnetic film composed of a CoCrTa film is formed to a thickness of 100 nm by a sputtering method.
Is formed.

FIG. 39 shows that the crystal orientation control film was made of CrM.
The crystal orientation of the FeAl film and the vertical orientation of the CoCrTa film when the o film is provided and when it is not provided are shown. The measurement method and the meaning of each numerical value shown in FIG. 39 are the same as those in the first embodiment. As can be seen from the figure, by forming the CrMo film before forming the FeAl film, the FeAl film can be formed while maintaining the substrate temperature at 100 ° C. from the lattice plane (110) plane to the lattice plane. The orientation of the (200) plane is changed, and accordingly, C
The half width Δθ ₅₀ of the oCrTa film is significantly reduced. That is, by providing the CrMo film, F
The orientation plane of the eAl film is the lattice plane of the CoCrTa film (001)
It is considered that the lattice matching with the plane changed to a lattice plane (200) plane having a good lattice plane, and the vertical orientation of the CoCrTa film was improved. This is considered to be because the CrMo film is formed with the lattice plane (200) plane as the orientation plane, and the FeAl film grows epitaxially on the orientation plane.

Next, FIG. 40 to FIG. 42 show recording / reproducing characteristics of the perpendicular magnetic recording medium manufactured by the above manufacturing method, that is, FIG.
6 shows characteristics of a medium noise, a reproduction output voltage, and a medium S / N with respect to a recording density. In FIGS. 40 to 42, each curve a is a curve representing the characteristic when the CrMo film is provided, and each curve b is a curve representing the characteristic when the CrMo film is not provided. The head and other measurement conditions and evaluation conditions for measuring these recording / reproducing characteristics are the same as in the first embodiment. According to FIG. 40, when the CrMo film was provided (curve a), no CrMo film was provided (curve b).
Media noise is smaller at all recording densities compared to
It can be seen that the noise characteristics are very excellent. this is,
By forming the FeAl film with the lattice plane (200) plane having good lattice matching with the lattice plane (001) plane of the CoCrTa film as the orientation plane, it is possible to reduce the thickness of the initial growth layer of the CoCrTa film. It is considered that low noise was realized. According to FIG. 41, by providing the CrMo film (curve a), the reproduction output voltage decay with the increase in the recording density is slower and higher than when the CrMo film is not provided (curve b). It can be seen that a high reproduction output voltage can be secured up to the recording density, and it is easy to realize a high recording density. This is because the vertical orientation of the CoCrTa film is improved by forming the FeAl film as the orientation plane with the lattice plane (200) having good lattice matching with the lattice plane (001) of the CoCrTa film, thereby improving the reproduction output. It is considered that the characteristics of the voltage with respect to the recording density were improved. Further, according to FIG. 42, by providing a CrMo film (curve a), C
Compared with the case where no rMo film was provided (curve b), the medium S / N was better by 1 to 2 dB at all recording densities, and it can be seen that high recording density and high quality can be realized. That is, the FeAl film is replaced with the lattice plane (001) of the CoCrTa film.
By forming the lattice plane (200) plane having good lattice matching with the plane as the orientation plane, it is easy to realize high quality and high recording density.

K. Eleventh Embodiment Next, an eleventh embodiment will be described. The perpendicular magnetic recording medium of this example has a schematic structure similar to the structure shown in FIG. 30, and has a crystal structure using a body-centered cubic lattice as a space lattice on a 2.5-inch-diameter circular glass substrate. Has, C
r: 50 at%, V: 20 at%, Nb: 20 at%,
Mo: a crystal orientation control film composed of a CrVNbMo film having a composition of 10 at%, a soft magnetic film composed of a sendust film, Co: 78 at%, Cr: 19 at%,
And a perpendicular magnetization film made of a CoCrTa film having a composition of Ta: 3 at%. Hereinafter, a method for manufacturing the perpendicular magnetic recording medium will be described. First, Cr: 50 was sputtered on a glass substrate.
at%, V: 20 at%, Nb: 20 at%, Mo: 1
6 inch CrVNbMo heater with 0 at% composition
Using a get, while maintaining the substrate temperature at 200 ° C,
The crystal orientation control film composed of the CrVNbMo film is 20
6 inch FeSiA by sputtering
Using a target, a soft magnetic film made of a sendust film is formed to a thickness of 500 nm while maintaining the substrate temperature at 100 ° C. The film forming conditions are the same as in the first embodiment. Next, on the soft magnetic film, Co: 78 at%, Cr: 1
CoCrTa having a composition of 9 at% and Ta: 3 at%
Using a target, a perpendicular magnetic film made of a CoCrTa film is formed to a thickness of 100 nm by a sputtering method.

FIG. 43 shows that the crystal orientation control film was made of CrV
The crystal orientation of the sendust film and the vertical orientation of the CoCrTa film when the NbMo film is provided and when it is not provided are shown. The measurement method and the meaning of each numerical value shown in FIG. 43 are the same as in the first embodiment. As can be seen from FIG. 43, by forming the CrVNbMo film before forming the sendust film, the sendust film has a substrate temperature of 10%.
Even when formed while maintaining the temperature at 0 ° C., the orientation changes from the lattice plane (110) plane to the lattice plane (200) plane, and the half-width Δθ ₅₀ of the CoCrTa film is remarkably reduced. ing. That is, by providing the CrVNbMo film, the orientation plane of the sendust film has a lattice plane (20) having good lattice matching with the lattice plane (001) plane of the CoCrTa film.
It is considered that the orientation changed to the 0) plane, and the vertical orientation of the CoCrTa film was improved. This is presumably because the CrVNbMo film was formed with the lattice plane (200) plane as the orientation plane, and the sendust film was epitaxially grown on the orientation plane.

Next, FIG. 44 to FIG. 46 show recording / reproducing characteristics of the perpendicular magnetic recording medium manufactured by the above-mentioned manufacturing method, that is, FIG.
6 shows characteristics of a medium noise, a reproduction output voltage, and a medium S / N with respect to a recording density. In FIGS. 44 to 46, each curve a is a curve representing the characteristics when the CrVNbMo film is provided, and each curve b is a curve representing the characteristics when the CrVNbMo film is not provided. The head and other measurement conditions and evaluation conditions for measuring these recording / reproducing characteristics are the same as in the first embodiment. According to FIG. 44, CrVNbMo
By providing the film (curve a), it can be seen that the medium noise is small at all recording densities and the noise characteristics are extremely excellent as compared with the case where the CrVNbMo film is not provided (curve b). This is because the Sendust film is made of CoCr
By forming the lattice plane (200) having good lattice matching with the lattice plane (001) of the Ta film as an orientation plane, C
It is considered that the thickness of the initial growth layer of the oCrTa film can be reduced, and noise reduction can be realized. Also,
According to FIG. 45, by providing the CrVNbMo film (curve a), the decay of the reproduction output voltage with the increase in the recording density was slower than that in the case where the CrVNbMo film was not provided (curve b). It can be seen that a high reproduction output voltage can be secured up to this point, and it is easy to realize a high recording density. This means that the sendust film is formed by the lattice plane (00) of the CoCrTa film.
It is considered that the vertical orientation of the CoCrTa film is improved by forming the lattice plane (200) plane having good lattice matching with the 1) plane as the orientation plane, and the characteristics of the read output voltage with respect to the recording density are improved. . Further, according to FIG. 46, by providing the CrVNbMo film (curve a),
Compared with the case where the CrVNbMo film was not provided (curve b), the medium S / N was 2 to 5 dB better at all recording densities, and it can be seen that high quality and high recording density can be realized.
That is, by forming the sendust film with the lattice plane (200) plane having good lattice matching with the lattice plane (001) plane of the CoCrTa film as the orientation plane, it is easy to realize high quality and high recording density.

Although the embodiments of the present invention have been described in detail with reference to the drawings, the specific configuration is not limited to the embodiments, and changes in design and the like may be made without departing from the gist of the present invention. Even if there is, it is included in the present invention. For example, in the above-described embodiments, the composition of the sendust film and other soft magnetic films is not shown at all, but any of these may be of a general composition. Further, the soft magnetic film is not limited to the alloy film shown in each of the above embodiments,
In short, any crystal may be used as long as it has a crystal structure with a body-centered cubic lattice as a spatial lattice and is formed on a substrate with the lattice plane (200) as an orientation plane. For example, Fe, Si, Al, R
An alloy film made of any two or more elements of u, Ti, N, and Co may be used. Further, in the above-described embodiment, the perpendicular magnetization films are all made of Co: 78 at%, C:
CoC having a composition of r: 19 at% and Ta: 3 at%
Although an example in which an rTa film is used has been described, the present invention is not limited to this. In short, the lattice plane (001) plane is (20) of the soft magnetic film.
Any material may be used as long as it is oriented in the 0) plane. For example, in the case of a CoCrTa film, Cr is 30a.
t% or less, and if it is a CoCr film, the Cr content is 3%.
What is less than 3 at% may be used. Further, in the above-described embodiment, an example is described in which the substrate is entirely formed of a glass substrate, but the present invention is not limited to this. For example, NiP / A
1 alloy substrate, carbon (C) substrate, Si substrate, or sapphire substrate may be used. In addition, in the above-described embodiment, an example is described in which the perpendicular magnetization film, the soft magnetic film, and the crystal orientation control film are all formed by a sputtering method using Ar gas. However, the present invention is not limited thereto. Kr) gas may be used, or another film formation method such as a vapor deposition method or a chemical vapor deposition (CVD) method may be used.

Further, in the above-described first to third embodiments, examples have been described in which the substrate temperature during the formation of the soft magnetic film is set to a predetermined temperature within the range of 200 ° C. to 300 ° C. However, the present invention is not limited to this. In short, the substrate temperature may be 200 ° C. or higher and a temperature at which a soft magnetic film can be formed. Further, in the above-described fourth to seventh embodiments, the example in which the gas pressure of the Ar gas at the time of forming the soft magnetic film is set to a predetermined gas pressure within the range of 10 to 30 mTorr has been described. The gas pressure of the Ar gas is not limited to 30 mTorr or less, that is, any gas pressure that can form a soft magnetic film may be used. In addition, in the eighth to eleventh embodiments described above, as the crystal orientation control film, a V film, a CrNb film, a CrMo film and a C
Although the example using the rVNbMo film has been described, the present invention is not limited to this. For example, a single film of Cr, Nb, and Mo,
An alloy film combining two or more of Cr, V, Nb, and Mo; or any of Cr, V, Nb, and Mo;
Alternatively, any combination of two or more of them may be used as well as an alloy-based film containing other elements as long as the crystal structure using the body-centered cubic lattice as a spatial lattice is not damaged as a crystal orientation control film. Further, the above-described first to third embodiments, fourth to seventh embodiments
In the embodiments of the present invention and the eighth to eleventh eleventh embodiments, the substrate temperature and the Ar
Although the example in which the gas pressure of the gas is set has been described, the present invention is not limited to this, and the film forming conditions of the respective soft magnetic films may be combined. In this case, a more remarkable effect is obtained.

[0059]

As described above, according to the structure of the present invention, the soft magnetic film alone or together with the crystal orientation control film has good lattice matching with the lattice plane (001) plane of the perpendicular magnetization film. Since the lattice plane (200) plane is formed as the orientation plane, the perpendicular orientation of the perpendicular magnetization film is improved, and the thickness of the initial growth layer of the perpendicular magnetization film can be reduced. The perpendicular magnetic recording medium has a three-layer structure at most. Further, according to the manufacturing method according to the configuration of the present invention,
It is not necessary to perform annealing or change the composition of each element constituting the perpendicular magnetization film in the film thickness direction. Therefore, the perpendicular magnetic recording medium can be manufactured inexpensively and easily, the medium noise during recording and reproduction can be reduced, and the characteristics of the reproduction output voltage with respect to the recording density can be improved.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a main part showing a schematic structure of a perpendicular magnetic recording medium according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a relationship between a substrate temperature when a sendust film is formed, a crystal orientation of a sendust film, and a vertical orientation of a CoCrTa film in the example.

FIG. 3 is a diagram showing characteristics of a medium noise with respect to a recording density of the perpendicular magnetic recording medium in the embodiment.

FIG. 4 is a diagram showing characteristics of a reproduction output voltage with respect to a recording density of the perpendicular magnetic recording medium in the embodiment.

FIG. 5 is a diagram showing characteristics of the medium S / N with respect to the recording density of the perpendicular magnetic recording medium in the example.

FIG. 6 shows the substrate temperature, the crystal orientation of the FeSi film and the CoC in forming the FeSi film in the second embodiment of the present invention.
FIG. 4 is a diagram illustrating a relationship with the vertical orientation of an rTa film.

FIG. 7 is a diagram showing characteristics of medium noise with respect to the recording density of the perpendicular magnetic recording medium in the example.

FIG. 8 is a diagram showing characteristics of a reproduction output voltage with respect to a recording density of the perpendicular magnetic recording medium in the example.

FIG. 9 is a diagram showing characteristics of the medium S / N with respect to the recording density of the perpendicular magnetic recording medium in the example.

FIG. 10 shows the substrate temperature, the crystal orientation of the FeAl film, and the Co temperature in forming the FeAl film in the third embodiment of the present invention.
FIG. 4 is a diagram showing a relationship with the vertical orientation of a CrTa film.

FIG. 11 is a diagram showing characteristics of medium noise with respect to the recording density of the perpendicular magnetic recording medium in the example.

FIG. 12 is a diagram showing characteristics of a reproduction output voltage with respect to a recording density of the perpendicular magnetic recording medium in the example.

FIG. 13 is a diagram showing characteristics of the medium S / N with respect to the recording density of the perpendicular magnetic recording medium in the example.

FIG. 14 is a diagram showing the relationship between the gas pressure of Ar gas during the formation of a sendust film, the crystal orientation of the sendust film, and the vertical orientation of the CoCrTa film in the fourth embodiment of the present invention.

FIG. 15 is a diagram showing characteristics of medium noise with respect to the recording density of the perpendicular magnetic recording medium in the example.

FIG. 16 is a diagram showing a characteristic of a reproduction output voltage with respect to a recording density of the perpendicular magnetic recording medium in the example.

FIG. 17 is a diagram showing characteristics of the medium S / N with respect to the recording density of the perpendicular magnetic recording medium in the example.

FIG. 18 shows a FeSiA according to a fifth embodiment of the present invention.
Gas pressure of Ar gas during lRuTi film formation and FeSiA
FIG. 4 is a diagram showing the relationship between the crystal orientation of an lRuTi film and the vertical orientation of a CoCrTa film.

FIG. 19 is a diagram showing characteristics of medium noise with respect to the recording density of the perpendicular magnetic recording medium in the example.

FIG. 20 is a diagram showing characteristics of a reproduction output voltage with respect to a recording density of a perpendicular magnetic recording medium in the example.

FIG. 21 is a diagram showing characteristics of the medium S / N with respect to the recording density of the perpendicular magnetic recording medium in the example.

FIG. 22 shows a FeTaN according to a sixth embodiment of the present invention.
FIG. 4 is a diagram showing the relationship between the gas pressure of Ar gas at the time of film formation and the crystal orientation of a FeTaN film and the vertical orientation of a CoCrTa film.

FIG. 23 is a diagram showing characteristics of medium noise with respect to the recording density of the perpendicular magnetic recording medium in the example.

FIG. 24 is a diagram showing characteristics of a reproduction output voltage with respect to a recording density of the perpendicular magnetic recording medium in the example.

FIG. 25 is a diagram showing characteristics of the medium S / N with respect to the recording density of the perpendicular magnetic recording medium in the example.

FIG. 26 is a relationship diagram showing the relationship between the gas pressure of Ar gas at the time of forming an FeCo film, the crystal orientation of the FeCo film, and the vertical orientation of the CoCrTa film in the seventh embodiment of the present invention.

FIG. 27 is a diagram showing characteristics of medium noise with respect to the recording density of the perpendicular magnetic recording medium in the example.

FIG. 28 is a diagram showing characteristics of a reproduction output voltage with respect to a recording density of a perpendicular magnetic recording medium in the example.

FIG. 29 is a diagram showing characteristics of the medium S / N with respect to the recording density of the perpendicular magnetic recording medium in the example.

FIG. 30 is a fragmentary cross-sectional view showing a schematic structure of a perpendicular magnetic recording medium according to an eighth embodiment of the present invention.

FIG. 31 shows V as a crystal orientation control film in the example.
FIG. 3 is a diagram showing the crystal orientation of a FeSi film and the vertical orientation of a CoCrTa film when a film is provided and when no film is provided.

FIG. 32 is a diagram showing characteristics of medium noise with respect to the recording density of the perpendicular magnetic recording medium in the example.

FIG. 33 is a diagram showing characteristics of a reproduction output voltage with respect to a recording density of the perpendicular magnetic recording medium in the example.

FIG. 34 is a diagram showing characteristics of the medium S / N with respect to the recording density of the perpendicular magnetic recording medium in the example.

FIG. 35 is a diagram showing the crystal orientation of a FeCo film and the vertical orientation of a CoCrTa film when a CrNb film is provided as a crystal orientation control film in a ninth embodiment of the present invention and when no CrNb film is provided. .

FIG. 36 is a diagram showing characteristics of medium noise with respect to the recording density of the perpendicular magnetic recording medium in the example.

FIG. 37 is a diagram showing characteristics of a reproduction output voltage with respect to a recording density of the perpendicular magnetic recording medium in the example.

FIG. 38 is a diagram showing characteristics of the medium S / N with respect to the recording density of the perpendicular magnetic recording medium in the example.

FIG. 39 is a view showing the crystal orientation of a FeAl film and the vertical orientation of a CoCrTa film when a CrMo film is provided as a crystal orientation control film and when no CrMo film is provided in a tenth embodiment of the present invention. .

FIG. 40 is a diagram showing characteristics of medium noise with respect to the recording density of the perpendicular magnetic recording medium in the example.

FIG. 41 is a diagram showing characteristics of a reproduction output voltage with respect to a recording density of the perpendicular magnetic recording medium in the example.

FIG. 42 is a diagram showing characteristics of the medium S / N with respect to the recording density of the perpendicular magnetic recording medium in the example.

FIG. 43 shows the crystal orientation and CoCr of a sendust film when a CrVNbMo film is provided as a crystal orientation control film in the eleventh embodiment of the present invention and when no CrVNbMo film is provided.
FIG. 4 is a diagram showing the vertical orientation of a Ta film.

FIG. 44 is a diagram showing characteristics of medium noise with respect to the recording density of the perpendicular magnetic recording medium in the example.

FIG. 45 is a diagram showing characteristics of a reproduction output voltage with respect to a recording density of the perpendicular magnetic recording medium in the example.

FIG. 46 is a diagram showing characteristics of the medium S / N with respect to the recording density of the perpendicular magnetic recording medium in the example.

FIG. 47 is a cross-sectional view of a main part showing a schematic structure of a conventional perpendicular magnetic recording medium.

[Explanation of symbols]

 1,11,21 Perpendicular magnetic recording medium 2,12,22 Substrate 3,13,24 Soft magnetic film 4,14,25 Perpendicular magnetization film 23 Crystal orientation control film

Claims (13)

[Claims] 1. A soft magnetic film having a crystal structure with a body-centered cubic lattice as a spatial lattice on a substrate and having a lattice plane (200) plane as an orientation plane, and a hexagonal close-packed lattice as a spatial lattice. And a perpendicular magnetic film having a crystal structure as described above. 2. A crystal orientation control film having a crystal structure having a body-centered cubic lattice as a spatial lattice on a substrate and having a lattice plane (200) as an orientation plane, and a body-centered cubic lattice formed as a spatial lattice. A soft magnetic film having a crystal structure having a lattice and having a lattice plane (200) plane as an orientation plane and a perpendicular magnetization film having a crystal structure having a hexagonal close-packed lattice as a space lattice are sequentially formed. A perpendicular magnetic recording medium, comprising: 3. The crystal orientation control film according to claim 1, wherein the crystal orientation control film comprises vanadium,
A film composed of any one of chromium, niobium and molybdenum, an alloy film composed of any two or more elements, or an alloy film composed of any one or more elements and at least one other element 3. The perpendicular magnetic recording medium according to claim 2, wherein: 4. The perpendicular magnetization film is an alloy film composed of cobalt, chromium and tantalum having an atomic percentage of chromium of 30% or less, or an alloy film composed of cobalt and chromium having an atomic percentage of chromium of 30% or less. The perpendicular magnetic recording medium according to any one of claims 1 to 3, wherein: 5. The soft magnetic film according to claim 1, wherein the soft magnetic film is an alloy film made of any two or more of iron, silicon, aluminum, titanium, ruthenium, cobalt, and nitrogen. 2. The perpendicular magnetic recording medium according to item 1. 6. The substrate according to claim 1, wherein the substrate is an alloy substrate made of nickel, phosphorus and aluminum, a glass substrate, a carbon substrate,
The perpendicular magnetic recording medium according to any one of claims 1 to 5, wherein the medium is a silicon substrate or a sapphire substrate. 7. A soft magnetic film having a crystal structure in which a body-centered cubic lattice is a spatial lattice and a lattice plane (200) plane is oriented on a substrate while maintaining the substrate temperature at a predetermined temperature of 200 ° C. or higher. A vertical step of forming a perpendicular magnetization film having a crystal structure with a hexagonal close-packed lattice as a spatial lattice on the soft magnetic film. A method for manufacturing a magnetic recording medium. 8. A body-centered cubic lattice is formed as a space lattice by maintaining a substrate temperature at a predetermined temperature on a substrate and setting a gas pressure of an argon gas to a predetermined gas pressure of 30 mTorr or less by a sputtering method. A first step of forming a soft magnetic film having a crystal structure with a lattice plane (200) plane as an orientation plane; and a perpendicular magnetization film having a crystal structure having a hexagonal close-packed lattice as a spatial lattice on the soft magnetic film. And a second step of forming a vertical magnetic recording medium. 9. Prior to the first step, a crystal orientation control film having a crystal structure having a body-centered cubic lattice as a spatial lattice is formed on a substrate while maintaining the substrate temperature at a predetermined temperature. 9. The method for manufacturing a perpendicular magnetic recording medium according to claim 7, wherein a third step of forming the (200) plane as an orientation plane is performed. 10. The crystal orientation control film is a film made of any one element of vanadium, chromium, niobium, and molybdenum, an alloy film made of any two or more elements,
10. The method for manufacturing a perpendicular magnetic recording medium according to claim 9, wherein the alloy film is an alloy film including at least one element and at least one other element. 11. The perpendicular magnetization film is an alloy film composed of cobalt, chromium and tantalum having an atomic percentage of chromium of 30% or less, or an alloy film composed of cobalt and chromium having an atomic percentage of chromium of 30% or less. The method for manufacturing a perpendicular magnetic recording medium according to any one of claims 7 to 10, wherein: 12. The soft magnetic film according to claim 7, wherein the soft magnetic film is an alloy film made of any two or more of iron, silicon, aluminum, titanium, ruthenium, cobalt, and nitrogen. 2. The method for manufacturing a perpendicular magnetic recording medium according to item 1. 13. The substrate according to claim 7, wherein the substrate is an alloy substrate made of nickel, phosphorus, and aluminum, a glass substrate, a carbon substrate, a silicon substrate, or a sapphire substrate. Method for manufacturing a perpendicular magnetic recording medium.