JPH11125655A - Semiconductor apparatus and apparatus and method for testing the same - Google Patents
Semiconductor apparatus and apparatus and method for testing the sameInfo
- Publication number
- JPH11125655A JPH11125655A JP9291928A JP29192897A JPH11125655A JP H11125655 A JPH11125655 A JP H11125655A JP 9291928 A JP9291928 A JP 9291928A JP 29192897 A JP29192897 A JP 29192897A JP H11125655 A JPH11125655 A JP H11125655A
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- JP
- Japan
- Prior art keywords
- temperature
- semiconductor device
- chip
- test
- voltage conversion
- Prior art date
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Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 87
- 238000012360 testing method Methods 0.000 title claims abstract description 47
- 238000000034 method Methods 0.000 title claims description 5
- 238000006243 chemical reaction Methods 0.000 claims abstract description 23
- 238000010998 test method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000009529 body temperature measurement Methods 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
- G01R31/2874—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature
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- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体装置の信頼性
試験に係り、特に、高温動作試験（バーンイン試験）に
好適な半導体装置とその試験装置及び半導体装置の試験
方法に関する。The present invention relates to a reliability test of a semiconductor device, and more particularly to a semiconductor device suitable for a high-temperature operation test (burn-in test), a test apparatus therefor, and a test method of the semiconductor device.
【０００２】[0002]
【従来の技術】従来より半導体装置の寿命を推定するた
めに、高温の炉内に半導体装置を動作状態でおく、高温
動作試験が行われている。高温動作試験（バーンイン試
験）は、半導体チップの温度が高いと寿命が短いという
ことを利用し短時間に半導体チップの寿命を推定するた
めに半導体チップの温度を上げて試験を実施する。2. Description of the Related Art Conventionally, in order to estimate the life of a semiconductor device, a high-temperature operation test for keeping the semiconductor device in an operating state in a high-temperature furnace has been performed. The high-temperature operation test (burn-in test) is performed by increasing the temperature of the semiconductor chip in order to estimate the life of the semiconductor chip in a short time by utilizing the fact that the life is short when the temperature of the semiconductor chip is high.
【０００３】図３は従来の試験装置を示す図であり、図
において、１はバーンイン試験装置であり、バーンイン
試験装置１には槽（炉）内を高温度に維持する恒温槽２
とそのための電力供給部３とが設けられ、恒温槽２内の
供試サンプルである半導体チップ４に電源５より電力が
供給され、試験が行われる。FIG. 3 is a view showing a conventional test apparatus. In the figure, reference numeral 1 denotes a burn-in test apparatus.
A power supply unit 3 is provided for the test, and power is supplied from a power supply 5 to a semiconductor chip 4 as a test sample in the thermostat 2 to perform a test.
【０００４】しかし、温度に誤差があると、それが半導
体チップの寿命の推定の誤差を大きくする。特に、従来
の技術においては高温動作試験炉（ＢＴ炉）内でバーン
イン試験にかけられている半導体チップをくるんでいる
パッケージの温度を一定に保っているものの、半導体チ
ップそのものの温度を正確測定していないから、半導体
チップの温度と炉内温度に差が生じ、寿命の推定に誤差
が生じていた。However, if there is an error in the temperature, it will increase the error in estimating the life of the semiconductor chip. In particular, in the prior art, although the temperature of a package surrounding a semiconductor chip subjected to a burn-in test in a high-temperature operation test furnace (BT furnace) is kept constant, the temperature of the semiconductor chip itself is accurately measured. Therefore, there is a difference between the temperature of the semiconductor chip and the temperature in the furnace, and an error occurs in estimating the life.
【０００５】[0005]
【発明が解決しようとする課題】本発明は、上記した従
来技術の欠点を改良し、高温動作試験において、精度よ
い試験結果を得、以って半導体装置の寿命を正確に推定
することを可能にした新規な半導体装置とその試験装
置、及び半導体装置の試験方法を提供するものである。SUMMARY OF THE INVENTION The present invention solves the above-mentioned drawbacks of the prior art and makes it possible to obtain accurate test results in a high-temperature operation test and thereby accurately estimate the life of a semiconductor device. The present invention provides a novel semiconductor device, a test device therefor, and a method for testing a semiconductor device.
【０００６】[0006]
【課題を解決するための手段】本発明は、上記した目的
を達成するため、基本的には、以下に記載されたような
技術構成を採用するものである。即ち、本発明に係わる
半導体装置の第１の態様としては、半導体装置内に、こ
の半導体装置のチップ温度を検出するための温度−電圧
変換手段を一体に組み込んだものであり、第２の態様と
しては、前記温度−電圧変換手段は半導体素子のチップ
上又はチップ近傍に組み込まれているものであり、第３
の態様としては、前記温度−電圧変換手段はＰＮ接合か
らなるダイオードであり、第４の態様としては、前記温
度−電圧変換手段は、バイポーラトランジスタで構成し
たものである。SUMMARY OF THE INVENTION The present invention basically employs the following technical configuration to achieve the above object. That is, as a first embodiment of the semiconductor device according to the present invention, a temperature-voltage conversion means for detecting a chip temperature of the semiconductor device is integrally incorporated in the semiconductor device. The temperature-voltage conversion means is incorporated on or near the chip of the semiconductor element.
In a fourth aspect, the temperature-voltage conversion means is a diode comprising a PN junction, and in a fourth aspect, the temperature-voltage conversion means is constituted by a bipolar transistor.
【０００７】又、半導体装置の試験装置の態様として
は、炉内温度を一定に保つと共に、この炉内に半導体装
置を入れ、この半導体装置を高温状態に維持して前記半
導体装置の試験を行う半導体装置の試験装置において、
前記試験用の半導体装置のチップ温度を検出するため、
この試験用の半導体装置に一体に組み込まれた温度−電
圧変換手段と、チップ温度を定める基準電圧と前記温度
−電圧変換手段の出力電圧とを比較する比較手段と、前
記比較手段の比較結果に基づき前記試験用半導体装置へ
の電力の供給をオン・オフするスイッチング手段とで構
成し、前記半導体装置のチップ温度を一定に保持するも
のであり、又、半導体装置の試験方法の態様としては、
炉内温度を一定に保つと共に、この炉内に半導体装置を
入れ、この半導体装置を高温に維持して前記半導体装置
の試験を行う半導体装置の試験方法において、前記半導
体装置内にこの半導体装置のチップ温度を検出するため
の温度−電圧変換手段を一体に組み込み、この温度−電
圧変換手段の出力する電圧に基づき前記炉内の半導体装
置への電力の供給をオン・オフ制御して半導体装置のチ
ップ温度を一定に保持して試験を行うものである。As a mode of the semiconductor device test apparatus, the temperature of the furnace is kept constant, the semiconductor device is put in the furnace, and the semiconductor device is tested at a high temperature. In semiconductor device test equipment,
To detect the chip temperature of the test semiconductor device,
Temperature-voltage conversion means integrated into the test semiconductor device, comparison means for comparing a reference voltage for determining the chip temperature with the output voltage of the temperature-voltage conversion means, and a comparison result of the comparison means. And a switching means for turning on and off the power supply to the test semiconductor device based on the semiconductor device. The chip temperature of the semiconductor device is kept constant.
In a semiconductor device test method for keeping the temperature inside the furnace constant, placing the semiconductor device in the furnace, and maintaining the semiconductor device at a high temperature, and testing the semiconductor device, the method for testing the semiconductor device includes the steps of: Temperature-voltage conversion means for detecting the chip temperature is integrally incorporated, and on / off control of the power supply to the semiconductor device in the furnace is performed based on the voltage output from the temperature-voltage conversion means. The test is performed while keeping the chip temperature constant.
【０００８】[0008]
【発明の実施の形態】本発明に係る半導体装置とその試
験装置及び試験方法は、上記したような技術構成を採用
していることから、温度−電圧変換手段は半導体装置の
チップの温度を検出し、検出した温度に対応する電圧は
比較手段に導かれる。比較手段には、予めチップの温度
を所定の温度に設定するための基準電圧が加えられ、比
較手段ではこの基準電圧と、温度−電圧検出手段から検
出したチップの温度に対応する電圧とが比較される。DESCRIPTION OF THE PREFERRED EMBODIMENTS The semiconductor device and its test apparatus and test method according to the present invention employ the above-mentioned technical configuration. Therefore, the temperature-voltage conversion means detects the temperature of the chip of the semiconductor device. Then, the voltage corresponding to the detected temperature is guided to the comparing means. A reference voltage for setting the temperature of the chip to a predetermined temperature is applied to the comparing means in advance, and the comparing means compares this reference voltage with a voltage corresponding to the chip temperature detected by the temperature-voltage detecting means. Is done.
【０００９】温度−電圧変換手段にＰＮ接合のダイオー
ドを用いると、ダイオードの温度係数は−２ｍＶ／ｄｅ
ｇであるから、温度が上昇すると、ダイオードの両端電
圧Ｖ D が下がる。仮に、チップ温度が上昇すると、ダイ
オードの電圧ＶD は下がるので、比較手段の出力は下が
り、比較手段はチップへの電力供給を停止するようにス
イッチング手段を制御する。やがて、チップ温度が下が
ると逆にダイオードＶD の電圧が上昇して比較手段の出
力はチップへの電力供給を行うようにスイッチング手段
を制御する。このようにして、チップ温度が高温で一定
になるように制御する。A PN junction diode is used for the temperature-voltage conversion means.
Using a diode, the temperature coefficient of the diode is -2 mV / de
g, when the temperature rises, the voltage across the diode
Pressure V DGoes down. If the chip temperature rises, the die
Aether voltage VDThe output of the comparison means
And the comparing means stops the power supply to the chip.
Control the switching means. Eventually, the chip temperature drops
Then, on the contrary, diode VDVoltage rises and the comparison
The power is switching means so as to supply power to the chip
Control. In this way, the chip temperature is constant at high temperatures
Control so that
【００１０】[0010]
【実施例】以下に本発明に係る半導体装置とその試験装
置及び試験方法の具体例を図１、２を参照しながら詳細
に説明する。図には、炉２内温度を一定に保つと共に、
この炉２内に半導体装置４を入れ、この半導体装置４を
高温状態に維持して前記半導体装置４の試験を行う半導
体装置の試験装置において、前記試験用の半導体装置４
のチップ５の温度を検出するため、この試験用の半導体
装置４に一体に組み込まれた温度−電圧変換手段６と、
チップ温度を決める基準電圧１１と前記温度−電圧変換
手段６の出力電圧とを比較する比較手段１０と、前記比
較手段１０の比較結果に基づき前記試験用半導体装置４
への電力の供給をオン・オフするスイッチング手段９と
で構成し、前記半導体装置のチップ温度を一定に保持す
ることを特徴とする半導体装置の試験装置が示されてい
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A specific example of a semiconductor device, a test apparatus and a test method according to the present invention will be described below in detail with reference to FIGS. In the figure, while keeping the temperature inside the furnace 2 constant,
The semiconductor device 4 is placed in the furnace 2, and the semiconductor device 4 is maintained in a high temperature state to perform a test on the semiconductor device 4.
Temperature-voltage conversion means 6 integrated with the test semiconductor device 4 to detect the temperature of the chip 5
Comparing means 10 for comparing a reference voltage 11 for determining a chip temperature with an output voltage of the temperature-voltage converting means 6; and the test semiconductor device 4 based on a comparison result of the comparing means 10.
And a switching device 9 for turning on / off the supply of power to the semiconductor device and maintaining a constant chip temperature of the semiconductor device.
【００１１】本発明を更に図１、２を用いて説明する
と、１はバーンイン試験装置、２はバーンイン試験装置
１の恒温槽（加熱炉）、３はバーンイン試験装置の電力
供給調整部であり、恒温槽２の中には供試サンプルであ
る半導体装置４が置かれている。この半導体装置４のチ
ップ５には温度−電圧変換手段である温度測定用のダイ
オード６が作り込まれ、このダイオード６には、定電流
源７から一定の電流が供給されている。The present invention will be further described with reference to FIGS. A semiconductor device 4 as a test sample is placed in the thermostat 2. A diode 6 for temperature measurement, which is a temperature-voltage conversion means, is built in a chip 5 of the semiconductor device 4, and a constant current is supplied to the diode 6 from a constant current source 7.
【００１２】又、半導体装置４には機器動作用電源８か
らスイッチング部９を介して電源が供給され、半導体装
置４が恒温槽２内で動作するようになっている。ダイオ
ード６の両端の電圧は電圧比較手段を構成するオペアン
プ１０の非反転端子１０ａに加えられ、又オペアンプ１
０の反転端子１０ｂには基準電源１１より所定の電圧が
加えられ、基準電源１１の出力電圧に対応する電圧に半
導体装置４のチップ温度が一定に保持されるようになっ
ている。Power is supplied to the semiconductor device 4 from a power supply 8 for device operation via a switching unit 9, and the semiconductor device 4 operates in the constant temperature bath 2. The voltage between both ends of the diode 6 is applied to a non-inverting terminal 10a of an operational amplifier 10 constituting voltage comparing means.
A predetermined voltage is applied from the reference power supply 11 to the 0 inversion terminal 10b, and the chip temperature of the semiconductor device 4 is kept constant at a voltage corresponding to the output voltage of the reference power supply 11.
【００１３】オペアンプ１０の出力にはスイッチング手
段であるスイッチング回路９がトランジスタ１１ａと抵
抗９ｂとで構成され、オペアンプ１０の出力でトランジ
スタ１１ａがスイッチングするようになっている。尚、
トランジスタ１１ａのコレクタには電源８が供給され、
トランジスタ１１ａのエシッタは半導体装置４に接続さ
れている。勿論、比較手段はオペアンプ以外の他の回路
手段で構成してもよいし又、スイッチング手段はリレー
等で構成するようにしてもよい。The output of the operational amplifier 10 is provided with a switching circuit 9 as a switching means, comprising a transistor 11a and a resistor 9b. The output of the operational amplifier 10 switches the transistor 11a. still,
The power supply 8 is supplied to the collector of the transistor 11a,
The etcher of the transistor 11a is connected to the semiconductor device 4. Of course, the comparing means may be constituted by circuit means other than the operational amplifier, and the switching means may be constituted by a relay or the like.
【００１４】このように構成した半導体装置の試験装置
において、仮に、半導体装置４のチップ温度が上昇する
と、ダイオード６の電圧ＶD は下がるので、オペアンプ
１０の出力は下がり、オペアンプ１０はチップへの電力
供給を停止するようにトランジスタ１１ａを制御する。
やがてチップ温度が下がると逆にダイオード６の電圧Ｖ
D が上昇してオペアンプ１０の出力はチップへの電力供
給を再び行うようにトランジスタ１１ａを制御する。こ
のようにして、半導体装置４のチップ温度が高温で一定
になるように制御する。[0014] The apparatus for testing a semiconductor device having such a configuration, if, when the chip temperature of the semiconductor device 4 is increased, since the voltage V D of the diode 6 drops, the output of the operational amplifier 10 is lowered, the operational amplifier 10 to the chip The transistor 11a is controlled so as to stop power supply.
Eventually, when the chip temperature drops, the voltage V of the diode 6 is reversed.
As D rises, the output of the operational amplifier 10 controls the transistor 11a so that power is again supplied to the chip. In this way, control is performed so that the chip temperature of the semiconductor device 4 becomes constant at a high temperature.
【００１５】なお、ダイオード６はトランジスタをダイ
オード接続したもので構成してもよい。又、ダイオード
６や上記トランジスタは半導体装置４のチップ上に組み
込むのが望ましいが、チップ近傍に一体に組み込まれた
構成でも本発明の目的は略達成出来る。Incidentally, the diode 6 may be constituted by a diode-connected transistor. It is desirable that the diode 6 and the transistor be incorporated on the chip of the semiconductor device 4. However, the object of the present invention can be substantially achieved by a constitution in which the diode 6 and the transistor are integrally incorporated near the chip.
【００１６】[0016]
【発明の効果】本発明は上述のように構成したので、半
導体製品の寿命を正確に推測でき安全をみるためのマー
ジンを小さくできるから、半導体製品の過剰品質による
費用の増加を防ぐことができる。Since the present invention is constructed as described above, it is possible to accurately estimate the life of a semiconductor product and to reduce the margin for safety, thereby preventing an increase in cost due to excessive quality of the semiconductor product. .
【図１】本発明の構成図である。FIG. 1 is a configuration diagram of the present invention.
【図２】電圧比較器とスイッチング部の具体例を示す回
路図である。FIG. 2 is a circuit diagram showing a specific example of a voltage comparator and a switching unit.
【図３】従来技術の構成を示す図である。FIG. 3 is a diagram showing a configuration of a conventional technique.
１ バーンイン試験装置 ２ 恒温槽（加熱炉） ３ 電力供給調整部 ４ 半導体装置 ５ 半導体チップ ６ 温度測定用ダイオード ７ ダイオード用定電流源 ８ 機器動作用電源 ９ スイッチング部 １０ オペアンプ １１ 基準電源 DESCRIPTION OF SYMBOLS 1 Burn-in test apparatus 2 Constant temperature chamber (heating furnace) 3 Electric power supply adjustment part 4 Semiconductor device 5 Semiconductor chip 6 Diode for temperature measurement 7 Constant current source for diode 8 Power supply for device operation 9 Switching part 10 Operational amplifier 11 Reference power supply
Claims (7)
プ温度を検出するための温度−電圧変換手段を一体に組
み込んだことを特徴とする半導体装置。1. A semiconductor device wherein temperature-voltage conversion means for detecting a chip temperature of the semiconductor device is integrally incorporated in the semiconductor device.
チップ上又はチップ近傍に組み込まれていることを特徴
とする請求項１記載の半導体装置。2. The semiconductor device according to claim 1, wherein said temperature-voltage conversion means is incorporated on or near a chip of the semiconductor element.
なるダイオードであることを特徴とする請求項１又は２
記載の半導体装置。3. The temperature-voltage conversion means is a diode comprising a PN junction.
13. The semiconductor device according to claim 1.
トランジスタで構成したことを特徴とする請求項１又は
２記載の半導体装置。4. The semiconductor device according to claim 1, wherein said temperature-voltage conversion means comprises a bipolar transistor.
に半導体装置を入れ、この半導体装置を高温状態に維持
して前記半導体装置の試験を行う半導体装置の試験装置
において、 前記試験用の半導体装置のチップ温度を検出するため、
この試験用の半導体装置に一体に組み込まれた温度−電
圧変換手段と、チップ温度を定める基準電圧と前記温度
−電圧変換手段の出力電圧とを比較する比較手段と、前
記比較手段の比較結果に基づき前記試験用半導体装置へ
の電力の供給をオン・オフするスイッチング手段とで構
成し、前記半導体装置のチップ温度を一定に保持するこ
とを特徴とする半導体装置の試験装置。5. A test apparatus for a semiconductor device, wherein a temperature in a furnace is kept constant, a semiconductor device is put in the furnace, and the semiconductor device is tested while maintaining the semiconductor device in a high temperature state. To detect the chip temperature of the semiconductor device
Temperature-voltage conversion means integrated into the test semiconductor device, comparison means for comparing a reference voltage for determining the chip temperature with the output voltage of the temperature-voltage conversion means, and a comparison result of the comparison means. And a switching means for turning on and off the power supply to the test semiconductor device based on the test data, and maintaining a constant chip temperature of the semiconductor device.
に半導体装置を入れ、この半導体装置を高温に維持して
前記半導体装置の試験を行う半導体装置の試験方法にお
いて、 前記半導体装置内にこの半導体装置のチップ温度を検出
するための温度−電圧変換手段を一体に組み込み、この
温度−電圧変換手段の出力する電圧に基づき前記炉内の
半導体装置への電力の供給をオン・オフ制御して半導体
装置のチップ温度を一定に保持して試験を行うことを特
徴とする半導体装置の試験方法。6. A method for testing a semiconductor device, wherein the semiconductor device is placed in the furnace while the temperature in the furnace is kept constant, and the semiconductor device is tested at a high temperature. Temperature-voltage conversion means for detecting the chip temperature of the semiconductor device is integrated with the semiconductor device, and on / off control of power supply to the semiconductor device in the furnace is performed based on the voltage output from the temperature-voltage conversion means. And performing a test while maintaining a constant chip temperature of the semiconductor device.
なるダイオードであることを特徴とする請求項６記載の
半導体装置の試験方法。7. The method according to claim 6, wherein said temperature-voltage conversion means is a diode comprising a PN junction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9291928A JPH11125655A (en) | 1997-10-24 | 1997-10-24 | Semiconductor apparatus and apparatus and method for testing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9291928A JPH11125655A (en) | 1997-10-24 | 1997-10-24 | Semiconductor apparatus and apparatus and method for testing the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11125655A true JPH11125655A (en) | 1999-05-11 |
Family
ID=17775289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9291928A Pending JPH11125655A (en) | 1997-10-24 | 1997-10-24 | Semiconductor apparatus and apparatus and method for testing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11125655A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113406473A (en) * | 2021-05-17 | 2021-09-17 | 深圳米飞泰克科技有限公司 | Chip testing method and device, terminal equipment and storage medium |
-
1997
- 1997-10-24 JP JP9291928A patent/JPH11125655A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113406473A (en) * | 2021-05-17 | 2021-09-17 | 深圳米飞泰克科技有限公司 | Chip testing method and device, terminal equipment and storage medium |
| CN113406473B (en) * | 2021-05-17 | 2022-03-22 | 深圳米飞泰克科技股份有限公司 | Chip testing method and device, terminal equipment and storage medium |
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