JPH11121767A - Semiconductor device and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device which has a simple wiring structure, can be miniaturized and has better production yield. SOLUTION: An active layer board 48 having a through hole 49 filled with a dielectric 46 inside itself is joined to a support board 47 by the intervention of a dielectric; the through hole 49 formed trapezoidally in its cross section and its bottom is arranged to the support board side of SOI, and has the structure isolated from surroundings by a trench groove 28 provided with a comb teeth movable electrode of acceleration sensing and opposing comb teeth fixed electrode 39 on the board 48. And, the wiring 26 for connecting from the electrode 39 to the outside is arranged to cross the dielectric filled in the through hole on the main surface of SOI board. Because the sectional area of the through hole 49 is trapezoidal and its side is opened and slanted to upper direction, the active layer region of the side can be completely eliminated by etching when forming the trench groove 28. Consequently, no short-circuit between the comb teeth movable electrodes appears, thus good production yield can be raised, and simple wiring structure and miniaturization can be realize because the wiring is formed on the main surface of SOI board.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a semiconductor device formed using semiconductor micromachining technology and a method of manufacturing the same.

[0002]

2. Description of the Related Art A semiconductor device using a semiconductor surface micromachining technology is disclosed in, for example, Japanese Patent Application Laid-Open No. 7-24541.
No. 6 describes an acceleration detection device. In this device, a movable portion that is displaced by application of acceleration and a fixed portion facing the movable portion are formed in a semiconductor substrate, and a comb-shaped movable electrode and a fixed electrode are provided in each of the movable portions, and the two electrodes are spaced apart from each other by a small distance They are arranged so as to mesh with each other at a distance, and are configured to detect the magnitude of acceleration based on a change in capacitance between both electrodes when the movable portion is displaced by application of acceleration. Note that the reason why the comb-teeth electrode is used in the capacitance detection type as described above is to increase the facing area to increase the capacitance and improve the sensitivity and accuracy.

In the above-described structure, it is necessary to insulate each fixed electrode formed in a comb-like shape from the surroundings and to form wiring for connecting each fixed electrode to the outside. In the above-mentioned conventional example, in order to insulate each fixed electrode from the surrounding structure, a trench is provided, and the trench is insulated so as not to contact the surrounding portion. Therefore, the wiring structure for taking out from each fixed electrode to the outside floats in the above-mentioned groove portion and cannot be fixed, so that a wiring structure is formed on a separate substrate and bonded to the substrate to fix each wiring structure. The structure is such that wiring is connected to the electrodes.

[0004]

As described above, the conventional device has a structure in which a trench is formed in a semiconductor substrate to form a structure and is also insulated from the surroundings.
Wiring cannot be drawn directly from each part constituting the structure within the main surface of the substrate, so it is necessary to use a special structure of forming a wiring structure on another substrate and bonding it as described above. Since it is complicated and the area is large, miniaturization is difficult, and the manufacturing cost is high.
There was a problem.

As a method of solving the above problem, for example, a method of filling the trench with an insulator (dielectric) and forming an electrode thereon is conceivable. However, this method has the following problems. Hereinafter, description will be given based on FIG.

FIG. 10 schematically shows the above method.
(A) is a schematic cross-sectional view of a main part of the structure, and (b) is a schematic perspective view of the main part. As shown in (a), when a groove 101 is formed in a semiconductor substrate 100 and filled with an insulator, if the groove 101 is formed by etching from the substrate surface, it is impossible to form a groove whose wall surface is completely vertical. It is difficult, and the etched surface is slightly oblique. That is, the cross-sectional shape of the groove is an inverted trapezoid (the upper base is wider than the lower base). In order to fill the groove with an insulator and separate the electrodes 102 from each other, as shown in FIG. Since the lower end portion of the trapezoid is shaded when viewed from above, an etching residue 103 is likely to occur at that portion. If such an etching residue occurs, as shown in FIG. 3B, the electrodes may come into contact at that portion and short-circuit may occur, resulting in a problem that the production yield is significantly deteriorated.

As described above, the conventional structure has problems that the wiring structure is complicated and the area is large, so that miniaturization is difficult and the manufacturing cost is high.
If an attempt is made to solve the problem simply by burying an insulator in the groove and forming a wiring structure thereon, there has been a problem that a short circuit between the electrodes occurs as described above and the production yield is deteriorated.

SUMMARY OF THE INVENTION The present invention has been made to solve the problems of the prior art as described above. A semiconductor device having a simple wiring structure, miniaturization, high production yield, and low cost is provided. It is an object of the present invention to provide a manufacturing method thereof.

[0009]

Means for Solving the Problems In order to achieve the above object, the present invention is configured as described in the claims. That is, according to the first aspect of the present invention, an active layer substrate having a through-hole filled with a dielectric therein and a supporting substrate are joined via a dielectric, and the through-hole has a trapezoidal cross section. An SOI substrate arranged so that the lower bottom of the trapezoid is on the support substrate side, and at least one of the trenches provided in the active layer substrate and the through holes being formed so as to be insulated from the surroundings. A semiconductor device having a structure in which one conductive region is held by the support substrate via the dielectric, and an electrical wiring connecting the conductive region to the outside of the insulated range;
The SOI substrate is arranged so as to cross the dielectric filled in the through hole on the main surface of the SOI substrate.

According to the above structure, the cross-sectional shape of the through-hole is trapezoidal, and the side surface to be etched has an upwardly open slope (open slope when viewed from the etching direction).
When a conductive region is formed by trench etching of the active layer substrate, there is no shaded portion when viewed from the upper surface to be etched, and the semiconductor active layer region on the side surface of the through hole can be completely removed by etching. Therefore, a short-circuit portion does not occur between the conductive regions, and the manufacturing yield can be improved. In this structure, electric wiring can be provided on the main surface of the SOI substrate on the dielectric filled in the through-hole, so that the structure is simplified and miniaturization is possible.

The invention described in claim 2 is the first invention.
The movable part displaced in response to the application of a physical quantity, a plurality of comb-teeth movable electrodes interlocked with the movable part, and face the comb-teeth movable electrode at a small interval on a side surface in the longitudinal direction. This is applied to a physical quantity detection sensor (for example, an acceleration sensor) having a plurality of comb-tooth fixed electrodes. As described above, in the structure of the present invention, there is no possibility of causing a short circuit between the fixed comb electrodes or between the movable comb electrodes, and the wiring structure is simple, so that the interval between the electrodes can be further reduced. Become. Therefore, the detection capacitance can be increased.
Since this detection capacitance affects detection accuracy, sensitivity and S / N can be improved by increasing the detection capacitance in this way. Further, miniaturization is also possible. This configuration corresponds to, for example, a first embodiment described later.

According to a third aspect of the present invention, two or more independent comb-tooth fixed electrodes are arranged for one comb-tooth movable electrode, and the displacement of the movable portion and the comb-tooth movable electrode is reduced. It is configured to detect as a differential value of the capacitance between the comb tooth movable electrode and the plurality of comb tooth fixed electrodes. In the structure of the present invention, wiring can be drawn out from each comb-tooth fixed electrode with a simple structure. Therefore, if the above-described configuration is used and the capacitance between each comb-tooth fixed electrode is detected as a differential value, , The sensitivity can be improved. This configuration corresponds to, for example, a first embodiment described later.

According to a fourth aspect of the present invention, two or more independent fixed comb electrodes are arranged for one movable comb electrode, and at least one fixed comb electrode is used as a control electrode. It is configured to be used as. This control electrode can be used as, for example, a shield electrode, an input acceleration compensation electrode for generating electrostatic attraction for compensating input acceleration, or a pseudo acceleration input electrode for inputting pseudo acceleration by electrostatic attraction. This configuration is, for example, the second
Corresponds to the embodiment.

[0014] Claims 5 and 6 show the method of manufacturing the semiconductor device according to any one of claims 1 to 4, and claim 5 is that the active layer substrate and the supporting substrate are interposed through a dielectric. The following steps are shown on the assumption that an SOI substrate joined by bonding is used. Claim 6 shows the entire manufacturing method including the above-described SOI substrate manufacturing process.

In an acceleration sensor using polycrystalline silicon as described in Japanese Patent Publication No. 6-44008, an electrode of polycrystalline silicon is deposited using a chemical vapor deposition method. It is difficult to control the physical properties of such polycrystalline silicon, and in particular, it is difficult to control the residual internal stress that affects the sensitivity. Therefore, characteristics tend to vary from individual to individual. Further, since the thickness of the electrode formed by deposition is at most about several μm, it is also difficult to increase the area of the opposing surface of the comb-tooth electrode to increase the capacitance. In this regard, in the present invention, since an active layer substrate of single crystal silicon can be used, it is easy to control material constants such as residual internal stress, and it is possible to suppress variations among solids.
Further, since a structure such as a comb electrode is formed by performing trench etching on the active layer substrate, the electrode thickness can be appropriately set according to the thickness of the active layer substrate. Therefore, the detection capacitance can be increased by increasing the area of the opposing surface of the comb-tooth electrode, and high sensitivity and high accuracy can be realized.

[0016]

According to the present invention, since the wiring can be drawn out from the main surface of the substrate, electric wiring can be realized in each part of the microstructure by the ordinary semiconductor technology. This eliminates the need for special techniques such as bonding to an insulating substrate formed with wiring and buried wiring as in the conventional example, and has the effect of reducing manufacturing costs.

Further, when the present invention is applied to a sensor or the like for detecting displacement of a microstructure by a change in capacitance, it is possible to increase the arrangement density of the displacement detection electrodes and to increase the detected capacitance. Can be. Therefore, the detection S / N ratio of the sensor can be improved. In addition, the same detection capacitance can be ensured in a smaller area and the structure is simple, so that the manufacturing cost can be suppressed and the size can be reduced.
Furthermore, if the detection capacitance is the same, a larger change in the detection capacitance can be obtained, so that effects such as higher accuracy of the sensor can be obtained.

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION

(First Embodiment) FIG. 1 is a schematic plan view showing a first embodiment of the present invention, FIG. 2 is an enlarged schematic plan view of a capacitance section in FIG. 1, and FIG. A ′ cross-sectional schematic diagram, FIG. 4
FIG. 2 is a schematic sectional view taken along the line BB ′ of FIG. 1. First, the configuration will be described. This embodiment is an example of an acceleration sensor realized by an SOI substrate. The SOI substrate used in this embodiment is obtained by bonding a semiconductor active layer substrate (for example, a single crystal silicon substrate) 48 and a semiconductor support substrate 47 via a dielectric 46. The above-described semiconductor active layer substrate 48 is
9 has an oxide film 43 and a dielectric 46 embedded therein, and the cross-sectional shape of the through hole 49 is trapezoidal (semiconductor active layer substrate 4
The upper base is a trapezoid narrower than the lower base when viewed from the side with 8 facing up (see FIG. 3).

The acceleration sensor structure is realized by forming a trench 28 in the semiconductor active layer substrate 48. This acceleration sensor structure has a movable mass 3
0, a support portion 31 having one end connected to the movable mass 30,
A fixed part 32 to which the other end of the support part 31 (an end opposite to the connection part with the movable mass 30) is connected; a comb-shaped movable electrode 38 (a plurality of which is connected to the movable mass 30); Comb-tooth fixed electrodes 39 and 40 (each of which has a plurality) opposing the movable tooth electrode 38 at a small interval on its longitudinal side surface.
And the fixing portion 34 for fixing the comb-teeth fixed electrodes 39 and 40 to the support substrate 47.

As shown in FIG. 2, the movable mass 30 has an etching hole 5 for forming a gap described below.
3 are arranged in large numbers. As a result, by using the method described in the manufacturing process example described later, as shown in FIGS. 3 and 4, a gap 45 is formed between the dielectrics 46 immediately below the structures other than the fixing portions 32 and 34, A movable space is secured. The fixing portions 32 and 34 are fixed to the dielectric 46 by the oxide film 43.

As shown in FIG. 2, two comb-tooth fixed electrodes face one comb-tooth movable electrode at equal intervals. Contact holes 37 and 42 are formed in the insulating film 44 formed on the surfaces of the fixing portions 32 and 34, and the conductive wiring 26 deposited by the contact holes serves as the fixing portion 34 and the wiring 36 serves as the fixing portion. 32. Protective films 41 and 35 are formed on the surfaces of the wirings 26 and 36. The wirings 26 and 36 extend from the fixing portions 34 and 32 to the frame portion 50 across the surface portion 29 of the through hole 49 in which the oxide film 43 and the dielectric 46 are embedded. In particular, the wiring 26 drawn out from the fixed portion 34 of the comb fixed electrode is connected to the comb movable electrode 38 in FIG.
Objects 40 facing each other in the upper part of the middle and objects 39 facing each other in the lower part are connected to each other. To realize this connection, a jumper wire 27 using a conductive wiring is used.

In FIG. 1, the wiring drawn from the fixed portion 32 of the movable mass 30 to the frame portion 50 is C, a comb-shaped fixed electrode 40 facing the comb-shaped movable electrode in FIG.
1 is indicated by U, and the line from the comb-tooth fixed electrode 39 facing the lower side in FIG. 1 is indicated by D. Wirings C, U and D are 2
There is a set of books, each of which is connected in common and input to a subsequent signal processing circuit (the signal processing circuit is not shown).

Next, FIG. 5 to FIG. 7 are sectional views showing an example of the manufacturing process of the above-mentioned device. This cross section corresponds to FIG. Note that each of the steps (a) to (j) in FIGS. 5 to 7 is a series of steps, but is illustrated as being divided into three sheets for convenience of illustration. Hereinafter, this manufacturing process will be described. (A) Semiconductor active layer substrate (for example, silicon single crystal substrate)
The V-shaped groove 51 is formed by performing anisotropic etching using an alkaline etchant or the like at 48. (B) The oxide film 43 is formed on the surface of the semiconductor active layer substrate 48. (C) A dielectric 46 is deposited on the oxide film 43 on the surface of the semiconductor active layer substrate 48. As the dielectric, polycrystalline silicon deposited by a chemical vapor deposition method, B-Si-O glass deposited by a flame deposition method, or the like can be used. (D) After the surface of the dielectric 46 is flattened, the semiconductor active layer substrate 48 is turned over so that the dielectric 46 is turned down, and the semiconductor active layer substrate 48 is overlaid on the semiconductor support substrate 47 and joined.

(E) The semiconductor active layer substrate 48 is filled with a dielectric 46 and an oxide film 43 by grinding the surface opposite to the bonding surface of the semiconductor active layer substrate 48 to a desired thickness reaching the V-shaped groove. The SOI substrate having the through hole 49 thus completed is completed. The cross-sectional shape of the through hole 49 is a trapezoid (a trapezoid whose upper base is narrower than its lower base when viewed from the side with the semiconductor active layer substrate 48 facing upward). (F) An insulating film 44 is formed on the SOI substrate. (G) forming a contact hole 42 in the insulating film 44;
After that, a conductor layer is deposited and patterned to form the wiring 26 so as to cross the through hole 49. (H) The insulating film 44 is patterned, and the wiring protective film 41 is formed.
Is deposited and patterned.

(I) Mask layer 52 for trench etching
Is deposited and then patterned according to the acceleration sensor structure. Although a large number of patterns of etching holes 53 are formed in the movable mass 30, they are not shown. However, in the trench etching pattern in the vicinity of the comb fixed electrode, as shown in FIG. 2, an overlapping region 33 with the through-hole surface 29 is provided. Thereafter, a trench 28 reaching the oxide film 43 is formed in the semiconductor active layer substrate 48. (J) removing a part of the oxide film 43 with a hydrofluoric acid-based solution;
A movable space gap 45 is formed. Note that a movable space gap 45 is also formed directly below the movable mass 30 via an etching hole 53 (not shown).

When the above-described manufacturing process is used, FIG.
Are realized as shown in FIGS. 8A to 8D. In FIG. 8, (a) is a state immediately before the step of FIG. 7 (i), and an etching mask 52 is deposited on the patterned insulating film 44. (B) The etching mask 52 is patterned according to the structure. (C) Perform trench etching to reach oxide film 43. At this time, since the side surface of the through hole 49 is inclined upward, there is no shaded portion when viewed from the upper surface to be etched, and the semiconductor active layer region on the side surface of the groove can be completely removed by etching. . Therefore, a short-circuit portion does not occur between the comb fixed electrodes. (D) Corresponding to the step of FIG. 7 (j), a part of the oxide film 43 is removed with a hydrofluoric acid-based solution to form a movable space gap 45.

Next, the operation of this embodiment will be described. The basic operation of the acceleration sensor is the same as that of the conventional example. In FIG. 1, the movable mass 30 and the comb movable electrode 38 are displaced in accordance with the acceleration input in the x-axis direction.
The displacement is caused by the comb movable electrode 38 and the comb fixed electrodes 39 and 40.
Is detected as a change in capacitance between the two. The two capacitance changes have opposite signs, that is, when the capacitance between the comb movable electrode 38 and the comb fixed electrode 39 increases, the comb movable electrode 38 increases.
The capacitance between the fixed electrode 40 and the fixed electrode 40 decreases, and when the former decreases, the latter increases. As described above, since the comb-tooth fixed electrodes 39 and 40 are wired independently of each other, if differential connection is used, detection by differential capacitance is possible.

Hereinafter, the above operation will be described in comparison with the above-mentioned conventional example (JP-A-7-245416). In the conventional example, each comb-teeth fixed electrode is connected to one wiring. In such a structure, as shown in FIG. 11, it is necessary to arrange adjacent comb movable electrodes and comb fixed electrodes at different intervals. It is assumed that each of the comb tooth movable electrodes 106a to 106a
When the movable portion 105 is displaced in the direction of arrow A, for example, when the movable portion 105 is displaced in the direction of arrow A,
As a result, the distance from the comb tooth fixed electrode 108a is reduced by the same distance as the distance approaching 8b, and the change in the overall capacitance is offset. Therefore, as shown in FIG. 11, if one interval is k and the other is m, it is necessary to set k ≠ m. As described above, in order to arrange adjacent movable comb electrodes and fixed fixed electrodes at different intervals, it is necessary to increase the distance between the electrodes, so that the arrangement density of the comb electrodes in the main surface of the substrate is improved. In particular, there is a limit, and there is a limit in improving the detection capacitance value.

Further, as described above, even if the adjacent movable comb electrode and the fixed fixed comb electrode are arranged at different intervals, they are separated from the other electrode by an amount approaching one electrode. Changes are offset and become smaller. The details will be described below. In FIG. 11, for example, the comb movable electrode 1
06a and the distance between the comb tooth fixed electrode 108a are k, the distance between the comb tooth movable electrode 106a and the comb tooth fixed electrode 108b is m,
Assuming that the former capacitance is Ck and the latter capacitance is Cm, the entire detected capacitance is formed by the sum of Ck and Cm.

When the movable portion 105 is displaced by x in the direction of the arrow A, the gap m is separated by the distance that the gap k approaches, so that the capacitance changes of Ck and Cm have opposite signs and cancel each other. Assuming that m = n × k (where n is an arbitrary number), the detected capacitance (Ck) after being displaced by x
+ Cm) _x is represented by the following (Equation 1). (Ck + Cm) _x = (εS / k) · (1 + 1 / n) · [1- (x / k) · (1-1 / n)] (Equation 1) where ε: dielectric constant x: displacement amount S : Electrode facing area This indicates that the rate of change is reduced to (1-1 / n) as compared with the case of the detection capacitance facing only at the gap k. For example, if n = 3, the change rate decreases by 33%. That is, the sensitivity is reduced. Also,
As described above, there is a limit to increasing the ratio n between k and m in consideration of the electrode arrangement density. Even if the electrode arrangement density is increased to n = 5, the above-described 33% reduction is obtained. Since the reduction is only 20%, not so much effect can be obtained.

As described above, in the structure in which each of the comb-teeth fixed electrodes is connected to one wiring, it is necessary to arrange adjacent comb-teeth movable electrodes and comb-teeth fixed electrodes at different intervals. There is a limit to improving the arrangement density of the comb-teeth electrodes in the inside, and a limit to the improvement of the detected capacitance value. Furthermore, even if adjacent comb movable electrodes and comb fixed electrodes are arranged at different intervals, the change in the detection capacitance is canceled out because the distance from the other electrode is increased by the distance close to one electrode. .

On the other hand, in the structure of the present invention, wiring can be easily drawn from each electrode. Therefore, as shown in the embodiment, for one comb tooth movable electrode,
If two or more independent comb-tooth fixed electrodes are arranged, and the capacitance between the comb-tooth movable electrode and one of the comb-tooth fixed electrodes increases due to the displacement of the movable part, the other comb-tooth fixed electrode will Although the capacitance is reduced, by differentially connecting the two, there is no cancellation of the change in the detected capacitance, and a large change in the capacitance can be obtained. Therefore, adjacent comb-tooth movable electrodes and comb-tooth fixed electrodes can be arranged at equal intervals, so that the arrangement density of the comb-tooth electrodes in the main surface of the substrate can be improved. As a specific example of differentially connecting the capacitance between the two comb-teeth fixed electrodes, a wiring drawn from the two comb-teeth fixed electrodes may be connected to two input terminals of the differential amplifier.

According to the embodiment, the following effects can be obtained. (1) In an acceleration sensor structure formed by trench etching using an SOI substrate, electric wiring from each component can be realized on the main surface of the substrate. Therefore, the wiring can be formed by ordinary semiconductor manufacturing technology. As a result, there is no need for special techniques such as bonding with another substrate and wiring of the embedded wiring and wiring from the embedded wiring to the main surface of the substrate as in the conventional example, and the structure is simple and miniaturization is possible. The manufacturing cost can be reduced. (2) Since wiring is possible in the main surface of the substrate, when displacement of the movable portion is detected by capacitance, detection by differential capacitance is possible, and high precision of detection can be realized. (3) Since differential capacitance detection is possible, it is possible to improve the arrangement density of the detection capacitors within the main surface of the substrate. Therefore, if the area is the same, a larger emission capacitance can be obtained, and the sensitivity can be improved. If the sensitivity is the same, miniaturization and miniaturization are possible. (4) Since differential capacitance detection is possible, it is possible to avoid offset of capacitance change due to adjacent comb-tooth electrodes, and to ensure a larger detected capacitance change.

(Second Embodiment) FIG. 9 is a schematic plan view showing a second embodiment. This embodiment has the same basic structure as that of the first embodiment, and differs only in the method of connecting electrodes. Only the portions of the structure different from the first embodiment will be described. In FIG.
One (55) of the two fixed comb electrodes 54, 55 (corresponding to 39, 40 in FIG. 1) facing the comb movable electrode 38 connected to the movable mass 30 functions as a control electrode.

Next, the operation will be described. The basic operation is the same as that of the first embodiment, but each of the comb-teeth movable electrodes 38 and each of the comb-teeth fixed electrodes 54 (U, D) for the displacement of the movable mass 30.
Only the change in capacitance between the two is detected. And the control electrode 5
5 (CU, CD) has the same potential as the movable mass 30, and is used as a shield electrode, an input acceleration compensation electrode for generating electrostatic attraction for compensating input acceleration, or a pseudo acceleration input electrode for inputting pseudo acceleration by electrostatic attraction. Use.

The effects obtained are the same as those of the first embodiment, but the following effects can be obtained especially by providing the control electrode 55. (1) When the control electrode 55 is a shield electrode, it is possible to avoid a change in capacitance due to the adjacent comb-tooth electrode, and to secure a larger change in capacitance than the conventional example. (2) When the control electrode 55 is an input acceleration compensation electrode, the detection electrode of capacitance and the input acceleration compensation electrode are independent, so that the detection signal and the compensation signal can be separated, and the system configuration can be simplified. . (3) When the control electrode 55 is a pseudo acceleration input electrode, since the detection electrode for capacitance and the pseudo acceleration input electrode are independent, the detection signal and the pseudo input signal can be separated, and the system configuration can be simplified.

In the above embodiments, only the acceleration sensor has been described. However, the intention of the present invention is that if the electrical wiring is drawn from the structure formed by the trench etching, the acceleration sensor may be used. Not limited,
It can be applied in the same way, and a similar effect can be obtained.

[Brief description of the drawings]

FIG. 1 is a schematic plan view showing a first embodiment of the present invention.

FIG. 2 is an enlarged schematic view of a main part of FIG.

FIG. 3 is a sectional view taken along line A-A 'of FIG. 1;

FIG. 4 is a sectional view taken along the line B-B 'of FIG.

FIG. 5 is a sectional view showing a part of the manufacturing process of the present invention.

FIG. 6 is a sectional view showing another part of the manufacturing process of the present invention.

FIG. 7 is a sectional view showing another part of the manufacturing process of the present invention.

FIG. 8 shows another part (D in FIG. 2) in the manufacturing process of the present invention.
Sectional view showing −D ′).

FIG. 9 is a schematic plan view showing a second embodiment of the present invention.

10A and 10B are diagrams for explaining a problem in a conventional example, in which FIG. 10A is a schematic cross-sectional view of a main part, and FIG. 10B is a schematic perspective view of a main part.

FIG. 11 is a cross-sectional view for explaining a change in capacitance between the comb tooth movable electrode and the comb tooth fixed electrode.

[Explanation of symbols]

Reference Signs List 26 Wiring 27 Jumper Wire 28 Trench Groove 29 Surface of Through Hole 30 Movable Mass 31 Supporting Part 32 Fixed Part 33 Pattern Overlapping Area 34 Fixed Part 35 Protective Film 36 Wiring 37 Contact Hole 38 ... comb-tooth movable electrode 39, 40 ... comb-tooth fixed electrode 41 ... protective film 42 ... contact hole 43 ... oxide film 44 ... insulating film 45 ... movable space gap 46 ... dielectric 47 ... semiconductor support substrate 48 ... semiconductor active layer substrate 49 ... through-hole 50 ... frame part 51 ... V-shaped groove 52 ... etching mask 53 ... etching hole 54 ... comb tooth fixed electrode 55 ... control electrode 100 ... semiconductor substrate 101 ... groove 102 ... electrode 103 ... etching remaining 104 ... etching removal A portion 105 to be movable 105a to 106c movable comb electrode 107 fixed portions 108a to 108c fixed comb teeth Constant electrode C: Wiring drawn out from fixed portion 32 of movable mass 30 to frame portion 50 U: Wiring from comb-tooth fixed electrode 40 facing comb-tooth movable electrode 38 above in FIG. 1 D: Comb-tooth movable electrode 1 is a wiring from the comb-tooth fixed electrode 39 facing downward in FIG. 1. CU: a wiring from the control electrode facing the comb movable electrode 38 above in FIG. 1. CD is a wiring from the comb movable electrode 38 in FIG. From the control electrode facing below

Claims (6)

[Claims] An active layer substrate having a through-hole filled with a dielectric therein and a supporting substrate are joined via a dielectric, and the through-hole has a trapezoidal cross-sectional shape, and a lower base of the trapezoid is provided. Using an SOI substrate arranged so that
A semiconductor device having a structure in which at least one conductive region formed so as to be insulated from surroundings by a trench provided in the active layer substrate and the through hole is held by the support substrate via the dielectric. A semiconductor, wherein an electric wiring connecting from the conductive region to the outside of the insulated area is arranged so as to cross the dielectric filled in the through hole on the main surface of the SOI substrate. apparatus. 2. A movable part which is displaced in response to application of a physical quantity,
Forming a plurality of comb-teeth movable electrodes interlocked with the movable part and a plurality of comb-teeth fixed electrodes facing the comb-teeth movable electrode at a small interval on a side surface in a longitudinal direction on the SOI substrate; What is claimed is: 1. A semiconductor device serving as a physical quantity detection sensor including a movable tooth electrode and a fixed comb electrode as the conductive region, wherein the semiconductor device is connected to the outside of the insulated range from the movable comb electrode and the fixed comb electrode. 2. The semiconductor device according to claim 1, wherein a target wiring is arranged so as to cross the dielectric filled in the through hole on the main surface of the SOI substrate. 3. 3. A comb-shaped movable electrode, wherein two or more independent fixed comb-shaped electrodes are arranged for one comb-shaped movable electrode, and the displacement of the movable part and the comb-shaped movable electrode is controlled by a plurality of comb-shaped movable electrodes. 3. The semiconductor device according to claim 2, wherein the semiconductor device is configured to be detected as a differential value of the capacitance between the fixed electrodes of the comb teeth. 4. The method according to claim 1, wherein two or more independent fixed electrodes of the comb are arranged for one movable electrode of the comb.
The semiconductor device according to claim 2, wherein the comb fixed electrode is used as a control electrode. 5. A semiconductor active layer substrate having a V-shaped groove on a surface, an oxide film provided on an inner surface and an outer surface of the V-shaped groove, and a dielectric provided on the oxide film. Using an SOI substrate bonded to a semiconductor support substrate via the above-mentioned dielectric, and forming a surface opposite to a bonding surface of the semiconductor active layer substrate to the V
By grinding to a desired thickness that reaches the U-shaped groove, the semiconductor active layer substrate portion has a trapezoidal cross section filled with the dielectric and the oxide film, and the lower bottom of the trapezoid is on the support substrate side. SOI having through hole formed
Forming a substrate, forming an insulating film on the SOI substrate, forming a contact hole in a predetermined portion of the insulating film, depositing and patterning a conductor layer, and crossing the through hole. Forming a wiring, patterning the insulating film, further depositing and patterning a protective film for the wiring, and removing a part of the oxide film with a hydrofluoric acid-based solution to reduce a movable space gap. The method of manufacturing a semiconductor device according to claim 1, further comprising: forming a semiconductor device. 6. A step of forming a V-shaped groove by performing anisotropic etching on the semiconductor active layer substrate; and forming an oxide film on a surface of the semiconductor active layer substrate including an inner surface of the V-shaped groove. Forming, a step of depositing a dielectric on an oxide film on the surface of the semiconductor active layer substrate, after planarizing the surface of the dielectric, the semiconductor active layer substrate is interposed between the dielectrics. A step of forming an SOI substrate by overlapping and bonding to a semiconductor support substrate;
By grinding to a desired thickness that reaches the U-shaped groove, the semiconductor active layer substrate portion has a trapezoidal cross section filled with the dielectric and the oxide film, and the lower bottom of the trapezoid is on the support substrate side. SOI having through hole formed
Forming a substrate, forming an insulating film on the SOI substrate, forming a contact hole in a predetermined portion of the insulating film, depositing and patterning a conductor layer, and crossing the through hole. Forming a wiring, patterning the insulating film, further depositing and patterning a protective film for the wiring, and removing a part of the oxide film with a hydrofluoric acid-based solution to reduce a movable space gap. The method of manufacturing a semiconductor device according to claim 1, further comprising: forming a semiconductor device.