JPH11118866A - Tape carrier package semiconductor device, method of disconnection test therefor, and liquid crystal panel display device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a practical disconnection test method for a flex TCP(tape carrier package) semiconductor device. SOLUTION: A TEG(test-element group) 1 is fabricated by providing a slit 3 in a polyimide base 2, forming a copper wiring pattern 4 across the top of the slit 3, and covering the copper wiring pattern 4 located near the top of the slit 3 with a solder resist 6. After the TEGs 1... are mounted on a liquid- crystal panel 11 and a PWB(printed wiring board) 12 by use of an ACF (anisotropic, conductive adhesive) 13, the TEGs 1... are curved so that the liquid crystal panel 11 and the PWB 12 face each other, thus fabricating several samples for a disconnection test. Next, the samples for the disconnection test are put in a temperature cycle vessel and exposed to a temperature environment in which 85 deg.C and -30 deg.C are repeated by 30 minutes each. The number of cycles at which the copper wiring patterns 4... on the samples for the disconnection test start to disconnect is counted. The TEG 1 formed to resist disconnection within 200 cycles is thus shown to be suitable for an actual TCP semiconductor device.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a TCP semiconductor device using a solder resist having appropriate flexibility, a method of testing a disconnection of a wiring pattern thereof, and a liquid crystal panel display device using the TCP semiconductor device. .

[0002]

2. Description of the Related Art Flexible folding TCP (Tape)
Carrier Package) semiconductor devices are called flex TCP semiconductor devices. The flex TCP semiconductor device is used particularly as a package of a driver semiconductor of a liquid crystal panel having a small frame size.

[0003] Liquid crystal panels tend to become larger year by year, and are currently used for notebook PCs (Personal Computers).
Some products exceed inches. Therefore, development of a flex TCP semiconductor device for a large liquid crystal panel is desired.

FIG. 7A shows a flex T according to the current technology.
The planar structure of the CP semiconductor device 101, FIG.
The sectional view taken along line -A 'is shown.

[0005] The flex TCP semiconductor device 101 has a configuration in which a driver IC chip 104 is electrically connected to a tape carrier 103 manufactured using a polyimide substrate 102 in the form of a film.

The tape carrier 103 has a slit 105
105, inner leads 106, input outer leads 107, output outer leads 108, and copper wiring patterns for forming the test pads 109, and epoxy solder for insulating the slits 105, 105 and the copper wiring patterns. Resist 110, polyimide solder resists 111, 111, polyimide solder resists 112, 112, and sprocket holes 113 used for pulling out and aligning the polyimide base material 102.
It is composed of

In particular, a hard epoxy solder resist 110 having a Young's modulus of 380 ± 80 kgf / mm ² and a Young's modulus of 50 ± 20 kgf / mm ² are formed on the copper wiring pattern.
Polyimide solder resist 111 having flexibility of ²
Use two types of solder resists 111 and 111. The epoxy solder resists 110 and 11 are made of polyimide solder resists 111 and 11 by utilizing a large Young's modulus.
(1) The role of preventing the occurrence of bleed (the solder resist mainly flowing out of the solvent component after printing), and the edge of the polyimide-based solder resist (111) peels off during the tin plating forming step when the tape carrier 103 is manufactured as described later. It has a role to prevent that. Thereby, the patterning accuracy of the polyimide solder resists 111 is improved.

On the lower surface of the slits 105 (on the back side of the surface on which the copper wiring pattern is formed), polyimide solder resists 112 are formed.

On the other hand, the driver IC chip 104
The bumps 114 are electrically connected to the inner leads 106. The periphery of the connection point is sealed with a resin 115.

Next, referring to FIG. 8, the tape carrier 1 in the flex TCP semiconductor device 101 having the above structure will be described.
03 will be described.

First, an adhesive is applied to the surface of a polyimide substrate 102 (UPIREX; trademark of Ube Industries) (Step 1), and the above polyimide substrate is formed to form device holes, slits 105, sprocket holes 113, and the like. The material 102 is punched out with a mold (step 2).

Next, one of 18 μm, 25 μm, and 35 μm thick copper foil is laminated on the polyimide substrate 102 (step 3). First, polyimide-based solder resists 112 are formed in the slits 105 from the side opposite to the surface on which a copper wiring pattern is to be formed later (Step 4). Then, a photoresist as an etching mask is applied to the surface of the copper foil (Step 5), and a desired pattern is baked by exposure (Step 6) and developed (Step 7). After forming a photoresist as an etching mask also in the device hole (Step 8), it is immersed in a copper foil etchant to form a desired copper wiring pattern (Step 9). After forming the copper wiring pattern in this manner, all the photoresists are removed by an organic solvent or dry etching (step 10).

Next, on the surface of the polyimide base material 102 on which the copper wiring pattern is formed, an epoxy solder resist 110 having a thickness of about 25 μm is placed between the polyimide solder resists 111 to be formed later from both sides.
Are formed by printing (step 11). Then, 25 μm so as to cover the slits 105, 105
A thick polyimide solder resist 111 is formed by printing (step 12).

Next, tin plating having a thickness of about 0.2 μm to 0.6 μm is formed on the exposed copper foil surface by an electroless plating method, and after tin plating, curing (heat treatment) is performed so that whiskers do not occur ( Step 13).

Finally, the tape carrier 103 manufactured by the above steps is shipped (step 14).

Further, there is a conventional flex TCP semiconductor device having a structure different from that of FIG. In this method, only one kind of hard epoxy epoxy resist having a Young's modulus of 200 ± 50 kgf / mm ² is formed on a copper wiring pattern. Since this flex TCP semiconductor device uses a solder resist having a large Young's modulus as described above, the flex TCP semiconductor device 1 having the structure shown in FIG.
Compared with 01, it is inferior in bending flexibility at the time of mounting.

Next, referring to FIG.
The liquid crystal panel 201 and the PWB of the CP semiconductor device 101 ...
(Printed Wiring Board) A method of mounting on the substrate 202 will be described. In general, when mounting a flex TCP semiconductor device on a TFT liquid crystal, depending on the resolution, for example, in the case of a liquid crystal panel of 1024 dots × 768 dots with a size of 12.1 inches, about 13 flex TCs are used.
The P semiconductor device is provided as a driver on the source side of the frame of one side panel.

First, an anisotropic conductive film ACF (Anisotropic Conductive Film)
) Is temporarily crimped. The ACF has a width of about 1.2 mm to about 3 mm, and is appropriately selected according to the size of the frame of the liquid crystal panel. Therefore, for example, if the width of the frame is small, a narrow ACF is selected. To temporarily press-fit the ACF, a tool heated to 90 ° C. is pressed for about 2 seconds while the ACF is stuck to the liquid crystal panel. At this time, the ACF reacts and is cured by heat, but is not completely cured so that the final pressure bonding can be performed later.

At the time when the ACF temporary crimping is completed, the ACF
Is peeled off, and the output-side outer leads 10 of the flex TCP semiconductor device 101 are removed therefrom.
8 are temporarily pressed. At this time, the flex TCP semiconductor device 101 and the liquid crystal panel 201 are aligned using the alignment marks formed respectively.

The flex TCP semiconductor devices 101 ...
Before this temporary crimping, since they are connected in a reel shape, they are punched out with a die to form individual pieces. Then, at the time of temporary compression bonding, the tool heated to 100 ° C. is set to 10 kgf / cm.
Press for 3 seconds with a load of ² , but do not completely cure the ACF.

After the temporary press-fit of the flex TCP semiconductor devices 101, the final press-fit is performed. Full crimp is for all Flex T
A tool heated to 200 ° C. is pressed against the CP semiconductor devices 101... At a load of 35 kgf / cm ² for 20 seconds.

When the flex TCP semiconductor devices 101 are mounted on the liquid crystal panel 201, the flex TCP
The input-side outer leads 107 of the semiconductor devices 101 are mounted on the PWB board 202. As a mounting method on the PWB substrate 202, there are a method by soldering and a method by ACF. In the mounting method using the ACF, the PWB substrate 2
02 are aligned, and all the flex TCP semiconductor devices 101 are mounted collectively. At this time, thermal stress concentrates on the flex TCP semiconductor devices 101 due to a difference in thermal expansion coefficient between the PWB substrate 202 and the glass substrate constituting the liquid crystal panel 201.

The flex TCP semiconductor devices 101 ...
In a state where such thermal stress is applied, the PWB substrate 202
Are bent to be arranged on the back side of the liquid crystal panel 201, so that the flex TCP semiconductor devices 101.
Stress concentrates on the copper wiring pattern. This thermal stress increases particularly as the size of the liquid crystal panel 201 increases.

Further, a straight type TCP semiconductor device 121 having no slit as shown in FIG.
There is a method of mounting without bending as shown in (1). However, in this method, the flex TCP semiconductor device 101
The frame size of the liquid crystal panel 201 cannot be reduced as in the case of (1). Therefore, it is disadvantageous when a large liquid crystal panel is to be mounted in a device having a predetermined size such as a notebook PC.

Next, the flex TCP semiconductor device 101
FIG. 11 (a) shows a method of disconnection test of copper wiring pattern
This will be described with reference to FIG. Conventionally, a TEG (Test Element G) which is a test pattern as shown in FIG.
roup) 131, and the MIT (Mass) shown in FIG.
The TEG 131 was bent by a test method of achusetts Institute of Technology), and the disconnection of the copper wiring pattern 132 was tested.

In this test method, for example, both ends of the jig 1
A weight of 100 g is placed on the TEG 131 sandwiched between 35 and 135, and a portion of the slit 133 having a width of 1 mm is bent from 90 ° to 0 ° at a bending radius of 0.3 mm to 0.4 mm,
Return to 180 ° and bend. 0 ° to 180 °
If the copper wiring pattern 132 formed on the slit 133 is disconnected, the number of times of the bending is calculated. It is determined that the greater the number of times of bending before disconnection, the better the resistance to bending. The above resistance is TEG
The solder resist 134 changes depending on the solder resist 134 used in the 131, and the solder resist 134 that does not break more than 20 times in this MIT test method has been used.

[0027]

However, a flex T using two types of solder resists as shown in FIG.
In the CP semiconductor device 101, the patterning accuracy of the epoxy solder resists 110 formed first is ± 0.2.
mm, and the patterning accuracy of the polyimide-based solder resist 111 formed thereafter is ± 0.3 mm.
It is. Therefore, the patterning accuracy of the portion where the two types of solder resists contact was poor at ± 0.5 mm.

The flex TCP semiconductor device 101
In this case, since the hard epoxy-based solder resists 110 are used, the flex TCP semiconductor device 101 itself becomes hard and loses flexibility. In addition, when a hard solder resist is formed on the flex TCP semiconductor device 101, the flex TCP semiconductor device 101 is warped, so that the flex TCP semiconductor device 101 cannot be smoothly transported in the assembly process. This warpage tends to occur particularly when the width of the flex TCP semiconductor device 101 is 48 mm or more.

Further, the flex TCP semiconductor device 10
In No. 1, since two types of solder resists are formed, the production process of the tape carrier 103 becomes complicated and the yield decreases, and the time required for the production of the tape carrier 103 is increased by repeating the solder resist process twice. Had become. Therefore, the manufacturing cost of the tape carrier 103 has been high.

When only a polyimide-based solder resist is formed on the flex TCP semiconductor device as the solder resist, it is possible to solve the warpage of the flex TCP semiconductor device and the increase in the manufacturing cost of the tape carrier. However, since the polyimide-based solder resist has low thixotropy, as shown in FIG.
Bleed 142 occurs in 41. The thixotropy is a measure of the property that the viscosity decreases upon stirring and increases upon standing. For example, when the thixotropy of the solder resist is high, the patterning accuracy is good because the viscosity is low during printing, and the viscosity increases after printing, so that bleeding is less likely to occur.

Therefore, if the thixotropy is low, the pattern edge 141 of the solder resist 143 is not accurately printed, which hinders the manufacture of the tape carrier. Further, the solder resist 143 flows out to inner leads 144... In the device hole of the tape carrier, and ILB (Inner Lead)
There is also a disadvantage that bonding cannot be performed in the bonding step.

In the step of sealing the inner lead of a flex TCP semiconductor device using only a polyimide solder resist as a solder resist, the polyimide solder resist has low adhesion to an epoxy liquid resin, and the flex TCP semiconductor It is difficult to fabricate the device.

In addition to the above problems, the MI for testing the disconnection of the copper wiring pattern of the flex TCP semiconductor device 101
The T test method also has problems. That is, in the MIT test, the disconnection point is the slit 13 as shown in FIG.
3 is different from the disconnection caused by bending after mounting the flex TCP semiconductor devices 101 on the liquid crystal panel 201 and the PWB substrate 202. As shown in FIG. 13, a disconnection occurring when mounting and bending is near an edge of a portion where the liquid crystal panel 201 and the flex TCP semiconductor device 101 are joined.

As the size of the liquid crystal panel increases, the stress on the flex TCP semiconductor devices 101 caused by the difference in the thermal expansion coefficient between the liquid crystal panel 201 and the PWB substrate 202 increases, and this stress concentrates on the copper wiring pattern. Disconnection is easy. For example, a disconnection failure hardly occurs when a 10.4-inch liquid crystal panel is used, but 11.3 inches.
This becomes apparent when a large liquid crystal panel of inches or more is used.

That is, in the MIT test, the slit 133
Can be detected, but the bending resistance at the time of mounting the flex TCP semiconductor devices 101 cannot be properly evaluated. Therefore, for example, Flex T using one type of epoxy solder resist
Although the CP semiconductor device obtained better results in the MIT test than the flex TCP semiconductor device using two types of solder resists, one type of epoxy solder resist was actually mounted on the liquid crystal panel. For example, it is easier to use a cable that uses a cable.

As described above, according to the conventional disconnection test method, it is impossible to determine a method of manufacturing a flex TCP semiconductor device which is optimal for a large liquid crystal panel. Also, Flex T
When the CP semiconductor device was mounted on the liquid crystal panel and evaluated, the disconnection defect that normally occurs in the liquid crystal panel mounting process is P
It is low in PM order and cannot be reasonably evaluated in a short time. Therefore, it is not possible to easily obtain a method for manufacturing a large-sized liquid crystal panel display device having a size of 15 inches or more at which a disconnection defect is expected to become apparent at a high yield.

The present invention has been made in view of the above-mentioned conventional problems, and has as its object to provide a practical disconnection test method for a flex TCP semiconductor device and a flex TCP semiconductor device obtained based on the disconnection test method. An object of the present invention is to provide an optimal structure and a large-sized liquid crystal panel display device using the flex TCP semiconductor device.

[0038]

According to a first aspect of the present invention, in order to solve the above-mentioned problems, a metal wiring pattern and an insulating protective film for insulatingly covering the metal wiring pattern are provided on an insulating tape. In a disconnection test method for conducting a disconnection test on a test tape carrier having a structure equivalent to that of the tape carrier of a tape carrier package semiconductor device having a tape carrier and a driving semiconductor element for driving a liquid crystal panel, One end is connected to the liquid crystal panel and the other end is connected to a circuit board that outputs a signal for driving the liquid crystal panel, and the test tape carrier is curved so that the liquid crystal panel and the circuit board face each other. The period at which the metal wiring pattern of the test tape carrier is disconnected by exposure to a temperature environment that changes at a constant cycle. It is characterized by determining the.

In the above invention, a test tape carrier having the same structure as that of the tape carrier is manufactured as a method for testing the disconnection of the metal wiring pattern of the tape carrier constituting the tape carrier package semiconductor device, and the test tape carrier is mounted on a liquid crystal panel and a circuit board. In a state in which the two are bent so as to face each other, a method is employed in which the number of periods of disconnection is determined by exposing to a temperature environment that changes at a constant period.

By bending the test tape carrier as described above, it is possible to approximate a state where the tape carrier package semiconductor device is actually mounted on the liquid crystal panel. In this state, when the test tape carrier is exposed to a temperature environment that changes at a constant cycle, the location of the disconnection coincides with the location of the disconnection occurring in the liquid crystal panel mounting process, and the occurrence of disconnection failure is accelerated.

Therefore, a disconnection defect occurring in the liquid crystal panel mounting step of the tape carrier package semiconductor device can be reliably confirmed in a short time by performing the above disconnection test.

According to a second aspect of the present invention, there is provided a tape carrier package semiconductor device comprising: a tape carrier having an insulating tape provided with a metal wiring pattern and an insulating protective film for insulatingly covering the metal wiring pattern; A semiconductor device for driving a liquid crystal panel, a tape carrier package semiconductor device having one end connected to the liquid crystal panel and the other end connected to a circuit board for outputting a signal for driving the liquid crystal panel. The insulating protective film is made of a material specified by the disconnection test method according to claim 1 to be such that the test metal wiring pattern is not disconnected within a predetermined cycle number or less.

According to the above invention, the insulating protection film formed on the tape carrier is specified by the disconnection test method according to claim 1 to be such that the test metal wiring pattern is not disconnected within a predetermined cycle number or less. Made of material.

As a result, even when the tape carrier package semiconductor device is mounted on a liquid crystal panel, the metal wiring pattern is hardly broken.

According to a third aspect of the present invention, there is provided a tape carrier package semiconductor device according to the second aspect, wherein the insulating protective film is formed at a temperature of 85 ° C and -30 ° C. 2. The method according to claim 1, wherein the test metal wiring pattern is one kind of solder resist that has been specified not to be disconnected in 200 cycles or less by a disconnection test method having a cycle of repeating the process every 30 minutes.

According to the above invention, the insulating protective film formed on the insulating tape is one type of solder resist.
This solder resist has a flexibility such that a metal wiring pattern is not disconnected in a period of 200 cycles or less by a disconnection test exposed to a temperature environment having a cycle of 85 ° C. and −30 ° C. for 30 minutes, that is, a cycle of 60 minutes. Have.

Therefore, even when the tape carrier package semiconductor device is mounted on a liquid crystal panel, the metal wiring pattern is hardly broken. Further, the tape carrier package semiconductor device is less likely to warp, and the formation of the insulating protective film is completed in one step, so that the manufacturing cost of the tape carrier can be reduced.

According to a fourth aspect of the present invention, there is provided a tape carrier package semiconductor device according to the third aspect, wherein the solder resist has a Young's modulus of 5 kgf / mm.
It is characterized by being in the range of ^{2 to} 70 kgf / mm ² .

According to the above invention, the Young's modulus is 5 kgf
/ Mm ² -70 kgf / mm ² , the solder resist functions as a very flexible insulating protective film.

Therefore, even if the tape carrier package semiconductor device is mounted on a liquid crystal panel, the metal wiring pattern is very unlikely to break. Further, the tape carrier package semiconductor device is less likely to warp, and the manufacturing cost of the tape carrier can be reduced.

According to a fifth aspect of the present invention, there is provided a tape carrier package semiconductor device according to the fourth aspect, wherein the thickness of the solder resist is in a range of 5 μm to 45 μm. It is characterized by having.

According to the above invention, the Young's modulus is 5 kgf
/ Mm ^{2 to} 70 kgf / mm ² and a thickness of 5
When the thickness is in the range of μm to 45 μm, the solder resist functions as a very flexible insulating protective film.

According to a sixth aspect of the present invention, there is provided a tape carrier package semiconductor device according to any one of the third to fifth aspects, wherein the solder resist has a viscosity Is contained in the range of 10 wt% to 40 wt%.

According to the above invention, the solder resist is
Since the filler is contained in the range of 10 wt% to 40 wt%, the viscosity becomes low at the time of printing.

Accordingly, the thixotropy of the solder resist is enhanced, bleeding is hardly generated at the edge of the solder resist during printing, and the patterning accuracy is improved.

According to a seventh aspect of the present invention, there is provided a tape carrier package semiconductor device according to any one of the third to sixth aspects, wherein the solder resist is made of a rubber-based material. , Polyimide, epoxy, silicone, or urethane.

According to the above invention, the solder resist is
A highly flexible insulating protective film made of any one of rubber, polyimide, epoxy, silicone, and urethane materials.

According to an eighth aspect of the present invention, there is provided a tape carrier package semiconductor device according to any one of the third to seventh aspects, wherein the tape carrier and the drive Around the part electrically connected to the semiconductor element,
The end of the liquid resin is covered with an insulating liquid resin so as to form an angle of 70 ° or less with the upper surface of the solder resist.

According to the above invention, the periphery of the portion where the tape carrier and the driving semiconductor element are electrically connected is covered with the insulating liquid resin. In this state, the edge of the liquid resin is in contact with the upper surface of the solder resist.
It is formed so as to form an angle of 0 ° or less.

As a result, the adhesion between the liquid resin and the solder resist is enhanced, and the tape carrier package semiconductor device can be manufactured with a high yield.

According to a ninth aspect of the present invention, there is provided a liquid crystal panel display device comprising: a tape carrier having an insulating tape provided with a metal wiring pattern and an insulating protective film for insulatingly covering the metal wiring pattern; A liquid crystal panel having a semiconductor device for driving the liquid crystal panel, a tape carrier package semiconductor device having one end connected to the liquid crystal panel and the other end connected to a circuit board for outputting a signal for driving the liquid crystal panel; In the display device,
The insulating protective film is made of a material specified by the disconnection test method according to claim 1 to be such that the test metal wiring pattern is not disconnected within a predetermined cycle number or less.

According to the above invention, the insulation protection film formed on the tape carrier is specified by the disconnection test method according to claim 1 as not disconnecting the test metal wiring pattern at a predetermined cycle number or less. Made of material.

As a result, even when the tape carrier package semiconductor device is mounted on a large-sized liquid crystal panel, the metal wiring pattern is hardly broken, and a large-sized liquid crystal panel display device can be provided with good yield.

According to a tenth aspect of the present invention, there is provided a liquid crystal panel display device according to the ninth aspect, wherein the insulating protective film is formed at a temperature of 85 ° C.
And -30 [deg.] C. each being repeated for 30 minutes. The method according to claim 1, wherein the test metal wiring pattern is one kind of solder resist identified as not breaking in 200 cycles or less. And

According to the above invention, the insulating protective film formed on the insulating tape is one type of solder resist.
This solder resist has a flexibility such that a metal wiring pattern is not disconnected in a period of 200 cycles or less by a disconnection test exposed to a temperature environment having a cycle of 85 ° C. and −30 ° C. for 30 minutes, that is, a cycle of 60 minutes. Have.

Therefore, even if the tape carrier package semiconductor device is mounted on a large liquid crystal panel, the metal wiring pattern is not easily broken. Further, the tape carrier package semiconductor device is less likely to warp, and the formation of the insulating protective film is completed in one step, so that the manufacturing cost of the tape carrier can be reduced.

As a result, a large-sized liquid crystal panel display device can be provided with a good yield.

According to an eleventh aspect of the present invention, there is provided a liquid crystal panel display device according to the tenth aspect, wherein the solder resist has a Young's modulus of 5 kgf / mm ^{2 to} 70 kgf / mm. mm ² .

According to the above invention, the Young's modulus is 5 kgf
/ Mm ² -70 kgf / mm ² , the solder resist functions as a very flexible insulating protective film.

Therefore, even when the tape carrier package semiconductor device is mounted on a liquid crystal panel, the metal wiring pattern is very unlikely to break. Further, the tape carrier package semiconductor device is less likely to warp, and the manufacturing cost of the tape carrier can be reduced.

As a result, a large-sized liquid crystal panel display device with good yield can be provided.

According to a twelfth aspect of the present invention, there is provided a liquid crystal panel display device according to the eleventh aspect, wherein the thickness of the solder resist is in a range of 5 μm to 45 μm. It is characterized by.

According to the above invention, the Young's modulus is 5 kgf
/ Mm ^{2 to} 70 kgf / mm ² and a thickness of 5
If it is in the range of μm to 45 μm, the solder resist functions as a very flexible insulating protective film.

Therefore, even when the tape carrier package semiconductor device is mounted on a liquid crystal panel, the metal wiring pattern is very unlikely to break. Furthermore, the TCP semiconductor device is less likely to warp, and the manufacturing cost of the tape carrier can be reduced.

As a result, a large-sized liquid crystal panel display device can be provided with a good yield.

A liquid crystal panel display device according to a thirteenth aspect of the present invention provides a liquid crystal panel display device according to the tenth to the tenth aspects.
2. In the liquid crystal panel display device according to any one of the above items 2, the solder resist has a filler for determining the viscosity
It is characterized in that it is contained in the range of 0 wt% to 40 wt%.

According to the above invention, the solder resist is
Since the filler is contained in the range of 10 wt% to 40 wt%, the viscosity becomes low at the time of printing.

Accordingly, the thixotropy of the solder resist is enhanced, and bleeding is hardly generated at the edge of the solder resist during printing, and the patterning accuracy is improved.

As a result, it is possible to provide a liquid crystal panel display device with good yield.

In order to solve the above-mentioned problems, the liquid crystal panel display device of the invention according to claim 14 is provided.
3. The liquid crystal panel display device according to item 3, wherein the solder resist is made of any one of rubber, polyimide, epoxy, silicone, and urethane materials.

According to the above invention, the solder resist
A highly flexible insulating protective film made of any one of rubber, polyimide, epoxy, silicone, and urethane materials.

Accordingly, the metal wiring pattern of the tape carrier package semiconductor device is hardly broken, and a large-sized liquid crystal panel display device can be provided with good yield.

The liquid crystal panel display device of the invention according to claim 15 is for solving the above-mentioned problems.
4. In the liquid crystal panel display device according to any one of (4), the periphery of a portion where the tape carrier and the driving semiconductor element are electrically connected is configured such that an end portion of the liquid resin is made of an insulating liquid resin. It is characterized in that it is covered so as to form an angle of 70 ° or less with the upper surface of the solder resist.

According to the above invention, the periphery of the portion where the tape carrier and the driving semiconductor element are electrically connected is covered with the insulating liquid resin. In this state, the edge of the liquid resin is in contact with the upper surface of the solder resist.
It is formed so as to form an angle of 0 ° or less.

As a result, the adhesion between the liquid resin and the solder resist is enhanced, and a tape carrier package semiconductor device can be manufactured with a high yield. Therefore, it is possible to provide a liquid crystal panel display device with good yield.

[0086]

BEST MODE FOR CARRYING OUT THE INVENTION

[Embodiment 1] An embodiment of a disconnection test method of the present invention will be described below with reference to FIG.

FIG. 1A shows a TEG 1 as a tape carrier used in the disconnection test method of the present embodiment. TEG1 is a test pattern used for a disconnection test instead of a TCP semiconductor device actually mounted. T
EG1 includes a polyimide substrate 2 as an insulating tape, a slit 3, a copper wiring pattern 4 as a metal wiring pattern,
It is composed of electrode pads 5.5 and a solder resist 6 as an insulating protective film.

On the back side of the slit 3, a polyimide solder resist 7 is applied as shown in FIG.

The dimensions of the main part of the TEG 1 are shown in FIG.
However, the present invention is not limited to this, and is appropriately changed according to the size of the TCP semiconductor device corresponding to the actual device of the TEG1. However, when forming the TEG 1, the type and thickness of the copper foil used for the copper wiring pattern 4, the type and thickness of the adhesive for bonding the polyimide substrate 2 and the copper foil, the type and thickness of the solder resist 6, and the slit The dimensions and the like of No. 3 were made equal to the TCP semiconductor device actually used. In particular, an electrolytic copper foil is used for the copper foil, the thickness is オ ン oz, the wiring pattern width is 35 μm, and the wiring pattern pitch is 70 μm. The adhesive used was # 7100 (trade name) manufactured by Toray Industries, Inc.

The electrode pads 5 are provided so that when the copper wiring pattern 4 is broken, it can be immediately confirmed. In order to confirm the disconnection defect, it is only necessary to bring the open checker into contact with the electrode pads 5 after the disconnection test.

Note that, for the purpose of simplifying the process, TEG1
The assembly of the driver IC chip is omitted.

Next, as shown in FIGS. 1 (b) and 1 (c), the TEG1... Having the above structure is bonded to the liquid crystal panel 11 and the PWB substrate 12 as a circuit board and bent. The joining process is as follows.

First, the ACF 13 is temporarily press-bonded to the liquid crystal panel 11. In this temporary crimping, a tool heated to 90 ° C.
A load of 0 kgf / cm ² is applied to the ACF 13 for 2 seconds. Then, the spacers adhering to the ACF 13 are peeled off, and TEG1. This temporary compression is performed under the same conditions as the above-described temporary compression.

Next, the tool heated to 200 ° C.
A load of kgf / cm ² is applied to TEG1 for 20 seconds, and TEG1.

The liquid crystal panel 11 is made of glass having a size of 13.8 inches and a thickness of 1.1 mm. Also,
All crimping devices are commercially available.

Next, the ACF 13 is joined to the PWB substrate 12. At this time, the ACF is performed under the same conditions as the liquid crystal panel 11.
, And the spacers of the ACF 13 are peeled off to align the TEG 1 with the PWB substrate 12.
All the TEGs 1... PWB substrate 1
2 has a thickness of 0.5 mm.

After joining TEG1 to the liquid crystal panel 11 and the PWB substrate 12, the liquid crystal panel 11 and the PWB substrate 12
Are curved so that they face each other at a predetermined interval, and several samples for a disconnection test are produced. FIG. 1C shows the sample as viewed from the side.

In the state where the copper wiring pattern 4 is bent as described above, the copper wiring pattern 4 is subjected to a disconnection test in a temperature cycle bath. The temperature cycle bath is set so that two temperatures of 85 ° C. and −30 ° C. are repeated for 30 minutes, and one cycle (cycle) is counted in one hour. Table 1 shows an example of the results obtained by preparing samples for various solder resists and applying this disconnection test method, and calculating the number of cycles at which disconnection occurs in each sample.

[0099]

[Table 1]

The sample tested had a Young's modulus of 20.
TEG (Sample 1) on which an epoxy solder resist of 0 kgf / mm ² was formed, Young's modulus was 50 kgf / mm 2
Young's modulus at both ends of polyimide solder resist of ² is 3
TEG (sample 2) on which an epoxy solder resist of 80 kgf / mm ² was formed, Young's modulus was 15 kgf / m
TEG forming a polyimide solder resist m ²
(Sample 3), TEG having a Young's modulus to form urethane solder resist of 33 kgf / mm ² (Sample 4), and a TCP semiconductor device having a Young's modulus to form an epoxy solder resist of 200 kgf / mm ² (Sample 5) is there.

Note that Sample 5 is Samples 1 to 4
Is a TCP semiconductor device actually used for a liquid crystal panel display device. The thickness of the solder resist is all unified to 25 μm.

In Table 1, the fractions shown in the column of the number of temperature cycles leading to disconnection indicate the number of samples tested by the denominator, and the numerator indicates the number of samples in which the disconnection occurred. First, all disconnection points are the actual device TC
This coincided with the case of the P semiconductor device. Sample 1 is 2
Sample 5 is 500
From the disconnection in the cycle, it can be seen that the acceleration coefficient of the disconnection test method of the present embodiment is 25 times. Therefore,
According to this disconnection test method, the disconnection mode of the actual device can be reproduced in a short time.

On the other hand, as practical disconnection resistance, it is necessary that no disconnection occurs within 200 cycles. Table 1 shows that Samples 3 and 4 satisfy this condition. Furthermore, the use of a solder resist having a small Young's modulus results in less disconnection. In sample 2, bleeding occurred during the test, and it was found that patterning accuracy deteriorated. Therefore, it is necessary to use a solder resist that does not cause bleed while maintaining the above-described disconnection resistance.

Therefore, in order to determine the conditions for such a solder resist, samples were prepared in which the amount of the filler for determining the thixotropic property was changed, and a disconnection test was performed. As a result, it was found that when a solder resist having a filler amount of 10 wt% to 40 wt% was used, the above-described disconnection resistance and prevention of bleed were compatible even at 200 cycles or more.

In a solder resist having a filler content of less than 10 wt%, large bleeding occurs in 500 cycles or more in a disconnection test, and in a solder resist having a filler content of more than 40 wt%, the Young's modulus increases and the flexibility of the solder resist decreases. The wire breaks within 200 cycles. The Young's modulus of a solder resist having a filler amount of 10 wt% to 40 wt% is 5 kgf / mm ^{2 to} 70 kg.
f / mm ² .

The Young's modulus was 5 kgf / mm ² -70.
In order to set it in the range of kgf / mm ² , the Young's modulus of the main material composed of the polymerization component in the solder resist is set to 1 kgf / m 2.
It is effective to set it to m ² or less.

From the results of the above disconnection test, the Young's modulus was 5 k.
The use of a solder resist having a gf / mm ^{2 to} 70 kgf / mm ² and a filler amount within a range of 10 wt% to 40 wt% has an effect of producing a TCP semiconductor device that can withstand practical use. Do you get it.

If the Young's modulus and the amount of the filler are set within the above ranges, the above effects can be obtained by using only one of rubber type, polyimide type, epoxy type, silicone type and urethane type solder resists. Is obtained. Furthermore, in the above-described disconnection test, the thickness of the insulating protective film to be formed was set to 25 μm, but is not limited thereto.
It was also found that the same effect can be obtained within the range of μm.

Next, as a comparative example to the disconnection test method of the present embodiment, Table 2 shows the results of the disconnection resistance test by the MIT test method.

[0110]

[Table 2]

The sample subjected to the test had a Young's modulus of 20.
TEG (Sample 1 ') on which an epoxy solder resist of 0 kgf / mm ² was formed, Young's modulus was 50 kgf / m 2
TEG (Sample 2 ') in which an epoxy solder resist having a Young's modulus of 380 kgf / mm ² was formed at both ends of a polyimide solder resist having an m ² of 15 kgf.
/ Mm ² polyimide solder resist formed TE
G (sample 3 ') and Young's modulus are 33kgf / mm
^{This is} a TEG (sample 4 ') on which a urethane solder resist of No. ² is formed. Each sample is made 10 pieces,
For these samples, the average value of the number of bendings leading to disconnection was determined.

Although each TEG has a different shape from TEG1 in the disconnection test method of the present embodiment, samples 1 'to 4' correspond to samples 1 to 4 as solder resist types, respectively.

In this MIT test method, the disconnection was limited to the copper wiring pattern provided on the slit, and did not match the disconnection of the TCP semiconductor device as an actual device. Moreover, the result of sample 1 'has higher disconnection resistance than sample 2', which is the opposite result to that of sample 2 showing higher disconnection resistance than sample 1 in the disconnection test method of the present embodiment. .

This means that although the sample 1 'in which the solder resist is not cracked or broken even when bent, has a better MIT test result than the sample 2', the solder resist used for them is actually When the present invention is applied to a TCP semiconductor device and mounted on a liquid crystal panel or a PWB substrate, this is consistent with the fact that the sample 1 'using the solder resist is easier to disconnect than the sample 2' using the solder resist.

As described above, the MIT test method cannot reproduce the disconnection mode in the actual device.

[Embodiment 2] An embodiment of a tape carrier package semiconductor device according to the present invention will be described below with reference to FIGS. In addition,
For convenience of description, components having the same functions as those shown in the drawings of the first embodiment are given the same reference numerals, and descriptions thereof will be omitted.

The TCP semiconductor device (tape carrier package semiconductor device) in the present embodiment is a flex TCP semiconductor device. FIG. 2A shows a flex T
The planar structure of the CP semiconductor device 21 is shown in FIG.
The sectional views along the line C ′ are shown.

The flex TCP semiconductor device 21 has a configuration in which a driver IC chip 24 as a driving semiconductor element is electrically connected to a tape carrier 23 manufactured using a polyimide substrate 22 as an insulating tape.

The tape carrier 23 has slits 25.2
5, inner lead 26, input outer lead 2
7, a copper wiring pattern as a metal wiring pattern composed of the output side outer leads 28 and the test pad 29, a polyimide solder resist 30 as a slit 25, and the insulating protection film for insulatingly covering the copper wiring pattern. Polyimide solder resists 31
And sprocket holes 32 used for feeding and positioning the polyimide substrate 22.

The driver IC chip 24 is electrically connected to the inner leads 26 via the Au bumps 33, and the periphery of the connection is sealed with a resin 34.

Next, referring to FIG. 3, the tape carrier 23 in the flex TCP semiconductor device 21 having the above structure will be described.
Will be described.

First, an adhesive is applied to the surface of the polyimide substrate 22 (UPILEX; trademark of Ube Industries) (Step 1), and the polyimide substrate 22 is formed to form device holes, slits 25, sprocket holes 32,. Is punched out with a mold (step 2).

Next, one of 18 μm, 25 μm, and 35 μm thick copper foil is laminated on the polyimide substrate 22 (Step 3). First, polyimide-based solder resists 31 are formed in the slits 25 from the opposite side to the surface on which a copper wiring pattern is to be formed later (Step 4).

Then, a photoresist as an etching mask is applied to the surface of the copper foil (Step 5), and a desired pattern is baked by exposure (Step 6) and developed (Step 7). After forming a photoresist as an etching mask also in the device hole (Step 8), it is immersed in a copper foil etchant to form a desired copper wiring pattern (Step 9). After forming the copper wiring pattern in this manner, all the photoresists are removed by an organic solvent or dry etching (step 10).

Next, on the surface of the polyimide substrate 22 on which the copper wiring pattern was formed, the filler amount was 30 wt%, the Young's modulus was 15 kgf / mm ² , and the thickness was 25 μm so as to cover the slits 25. Is printed and cured for about 2 hours (step 11).

In this step 11, the amount of filler is 1
It is in the range of 0 wt% to 40 wt% and the Young's modulus is 5 kg
Since only one type of solder resist in the range of f / mm ^{2 to} 70 kgf / mm ² is used, the results of the disconnection test of the first embodiment make it difficult for the copper wiring pattern to be disconnected and, as shown in FIG. The patterning accuracy can be improved to ± 0.2 mm without generation of the pattern. Further, the warp of the flex TCP semiconductor device 21 can be suppressed to 1 mm or less, and the flex TCP semiconductor device 21 can be smoothly transported in a later assembly process.

Furthermore, since the solder resist is formed only once, the number of days required to manufacture the tape carrier 23 can be reduced by one day as compared with the case where the solder resist is formed twice, and the QTAT (Quick Turn Around Time) can be reduced. You will be able to make a significant contribution. In addition, the manufacturing cost of the tape carrier 23 can be reduced by 10% to 20%.

Next, a tin plating having a thickness of 0.2 μm to 0.6 μm is formed on the exposed copper foil surface by an electroless plating method, and after tin plating, curing is performed so that whiskers do not occur (step 12).

Next, the driver IC chip 24 is bonded via the Au bumps 33 to the inner leads 26 of the tape carrier 23 manufactured by the above steps (step 1).
3). Then, the periphery of this joint is sealed with a resin 34 (Step 14), and the flex TCP semiconductor device 21 is completed.

In the step 14 of sealing the resin, the resin 3
4 is formed so as to cover the edge portion of the polyimide solder resist 30. At this time, the adhesion between the resin 34 and the polyimide solder resist 30 becomes a problem. When examining the correlation with this adhesiveness by changing the solvent component of the liquid resin, mixing silicone etc. as a leveling agent,
When the solvent component was 10 wt% or less, the contact angle at which the liquid resin came into contact with the polyimide-based solder resist was 70 ° or less, as shown in FIG. Moreover, even if the solvent component is reduced in this way, the resin can be poured into a desired position.

In addition, regardless of whether rubber or an epoxy-based, silicone-based, or urethane-based solder resist was used for the insulating protective film, the adhesion was good when the contact angle of the liquid resin was 70 ° or less.

Therefore, in step 14, by forming the resin 34 so that the contact angle with the polyimide-based solder resist 30 is 70 ° or less, the manufacturing yield of the flex TCP semiconductor device 21 is greatly improved.

[Embodiment 3] An embodiment of a liquid crystal panel display device of the present invention will be described with reference to FIG.
It is as follows. For convenience of description, components having the same functions as those shown in the drawings of Embodiments 1 and 2 are given the same reference numerals, and descriptions thereof are omitted.

As shown in FIG. 6, a liquid crystal panel display device 51 according to the present embodiment includes a flex TCP semiconductor device 21...
It comprises a B board 53, a backlight 54, and a bezel 55.

The procedure for manufacturing the liquid crystal panel display device 51 will be described below.

First, the ACF is temporarily bonded to the liquid crystal panel 52 by pressure bonding. The ACF has a width of about 1.2 mm to about 3 mm, and is appropriately selected according to the size of the frame of the liquid crystal panel 52. Therefore, for example, if the width of the frame is small, a narrow ACF is selected. To temporarily compress the ACF, leave the ACF attached to the liquid crystal panel 52,
Press the tool heated to 90 ° C for about 2 seconds. At this time, the ACF reacts and is cured by heat, but is not completely cured so that the final pressure bonding can be performed later.

When the temporary compression bonding of the ACF is completed, the ACF
Peel off the spacer attached to the flex T
The output outer leads 28 of the CP semiconductor devices 21 are temporarily press-bonded. At this time, the flex TCP semiconductor device 2
1 and the liquid crystal panel 52 are aligned with each other using the alignment marks formed thereon. Flex T
Since the CP semiconductor devices 21 are in a state of being connected in a reel shape before the temporary crimping, they are punched out with a die to form individual pieces. Then, at the time of temporary compression bonding, a tool heated to 100 ° C. is pressed with a load of 10 kgf / cm ² for 3 seconds.
Does not completely cure the ACF.

When the temporary press-bonding of the flex TCP semiconductor devices 21 is completed, the main press-bonding is performed next.

In the final press bonding, a tool heated to 200 ° C. is collectively applied to all the flex TCP semiconductor devices 21.
This is carried out by pressing with a load of 5 kgf / cm ² for 20 seconds.

When the flex TCP semiconductor devices 21 are mounted on the liquid crystal panel 52, the input outer leads 27 of the flex TCP semiconductor devices 21 are mounted on a PWB board 53 as a circuit board. As a mounting method on the PWB board 53, there are a method by soldering and a method by ACF. In the mounting method using the ACF, the PWB substrate 53 is aligned, and all the flex TCP semiconductor devices 21 are mounted collectively.

Thereafter, a backlight 54 serving as a light source is mounted on the back side of the liquid crystal panel 52, and the entire unit including the flex TCP semiconductor device 21, the liquid crystal panel 52, the PWB substrate 53, and the backlight 54 is covered with a bezel 55.

As described above, the liquid crystal panel display device 51
Is manufactured. As described above, the liquid crystal panel display device 51 uses the flex TCP semiconductor devices 21 having high disconnection resistance and good production yield. Therefore,
A large-sized liquid crystal panel display device having a size of 15 inches or more can be manufactured with good yield at low cost.

[0143]

The disconnection test method according to the first aspect of the present invention
As described above, the tape carrier package semiconductor device including the tape carrier in which the insulating tape is provided with the metal wiring pattern and the insulating protective film for insulatingly covering the metal wiring pattern, and the driving semiconductor element for driving the liquid crystal panel In the disconnection test method for performing a disconnection test on a test tape carrier having a structure equivalent to that of a tape carrier, one end of the test tape carrier is connected to a liquid crystal panel and the other end is connected to a circuit board that outputs a signal for driving the liquid crystal panel. In a state where the test tape carrier is curved so that the liquid crystal panel and the circuit board are opposed to each other, the test tape carrier is exposed to a temperature environment that changes at a constant cycle, and the test metal wiring pattern of the test tape carrier is exposed. Is used to determine the number of periods in which the line breaks.

Therefore, by bending the tape carrier as described above, the tape carrier package semiconductor device composed of the tape carrier and the driving semiconductor element can be brought close to the state actually mounted on the liquid crystal panel. . In this state, when the tape carrier is exposed to a temperature environment that changes at a constant cycle, the location of the disconnection coincides with the location of the disconnection occurring in the liquid crystal panel mounting process, and the occurrence of disconnection failure is accelerated.

As a result, there is an effect that the disconnection defect occurring in the liquid crystal panel mounting step can be surely confirmed in a short time by performing the disconnection test.

According to a second aspect of the present invention, there is provided a tape carrier package semiconductor device comprising: a tape carrier in which an insulating tape is provided with a metal wiring pattern and an insulating protective film for insulatingly covering the metal wiring pattern; A semiconductor device for driving the liquid crystal panel, one end of which is connected to the liquid crystal panel, and the other end of which is connected to a circuit board for outputting a signal for driving the liquid crystal panel. However, according to the disconnection test method of the first aspect, the test metal wiring pattern is made of a material specified not to be disconnected within a predetermined cycle number or less.

Therefore, even if the curved tape carrier is exposed to a temperature environment that changes at a constant cycle, the metal wiring pattern does not break more than a predetermined number of cycles.

As a result, even when the tape carrier package semiconductor device is mounted on a liquid crystal panel, there is an effect that the metal wiring pattern is hardly disconnected.

According to the tape carrier package semiconductor device of the third aspect of the present invention, as described above, in the tape carrier package semiconductor device according to the second aspect, the insulating protective film has a temperature of 85 ° C. and −30 ° C. 2. The test metal wiring pattern according to claim 1, which has a cycle that repeats every minute, wherein the test metal wiring pattern is one kind of solder resist that has been specified not to be broken in 200 cycles or less.

Therefore, in addition to the effect of the second aspect of the invention, the tape carrier package semiconductor device is less likely to warp, and the manufacturing cost of the tape carrier can be reduced.

As described above, in the tape carrier package semiconductor device according to the fourth aspect of the present invention, the Young's modulus of the solder resist is 5 kgf / mm ^{2 to} 70 kg in the tape carrier package semiconductor device according to the third aspect.
f / mm ² .

According to the above invention, the Young's modulus is 5 kgf
/ Mm ² -70 kgf / mm ² , the solder resist functions as a very flexible insulating protective film.

Therefore, the tape carrier package semiconductor device is less likely to warp, and the production cost of the tape carrier can be reduced.

According to a fifth aspect of the present invention, there is provided a tape carrier package semiconductor device according to the fourth aspect, wherein the thickness of the solder resist is in a range of 5 μm to 45 μm. is there.

According to the above invention, the Young's modulus is 5 kgf
/ Mm ^{2 to} 70 kgf / mm ² and a thickness of 5
When the thickness is in the range of μm to 45 μm, the solder resist functions as a very flexible insulating protective film.

Therefore, the tape carrier package semiconductor device is less likely to be warped, and the production cost of the tape carrier can be reduced.

As described above, the tape carrier package semiconductor device according to the sixth aspect of the present invention has the following features.
In the tape carrier package semiconductor device according to any one of the above, the solder resist contains a filler for determining the viscosity in a range of 10 wt% to 40 wt%.

Therefore, the thixotropy of the solder resist is enhanced, bleeding is hardly generated at the edge of the solder resist at the time of printing, and the patterning accuracy is improved.

The tape carrier package semiconductor device of the invention according to claim 7 is as described above.
In the tape carrier package semiconductor device according to any one of the above, the solder resist is made of any one of a rubber-based, polyimide-based, epoxy-based, silicone-based, or urethane-based material.

Therefore, there is an effect that the solder resist functions as a highly flexible insulating protective film.

The tape carrier package semiconductor device of the invention according to claim 8 is as described above.
In the tape carrier package semiconductor device according to any one of the above, the periphery of a portion where the tape carrier and the driving semiconductor element are electrically connected, the end of the liquid resin is made of an insulating liquid resin. In this configuration, the upper surface of the solder resist is covered at an angle of 70 ° or less.

Therefore, the adhesiveness between the liquid resin and the solder resist is enhanced, and the tape carrier package semiconductor device can be manufactured with high yield.

According to a ninth aspect of the present invention, there is provided a liquid crystal panel display device comprising: a tape carrier in which an insulating tape is provided with a metal wiring pattern and an insulating protective film for insulatingly covering the metal wiring pattern; A liquid crystal panel display device comprising a semiconductor device for driving, a tape carrier package semiconductor device having one end connected to the liquid crystal panel and the other end connected to a circuit board for outputting a signal for driving the liquid crystal panel. The insulating protective film is made of a material specified by the disconnection test method according to claim 1 to be such that the test metal wiring pattern is not disconnected within a predetermined cycle number or less.

Therefore, even when the tape carrier package semiconductor device is mounted on a large-sized liquid crystal panel, the metal wiring pattern is hardly broken, and a large-sized liquid crystal panel display device with high yield and low cost can be provided. This has the effect.

According to a tenth aspect of the present invention, as described above, in the liquid crystal panel display device according to the ninth aspect, the insulating protective film is set at 85 ° C. and −30 ° C. for 30 minutes. 2. The test metal wiring pattern according to claim 1, wherein the test metal wiring pattern has 20 cycles.
This is a configuration in which one type of solder resist is specified not to be disconnected in 0 cycles or less.

Therefore, the tape carrier package semiconductor device is less likely to warp, and the manufacturing cost of the tape carrier can be reduced.

As a result, there is an effect that a large-sized liquid crystal panel display device can be provided with good yield.

As described above, in the liquid crystal panel display device according to the eleventh aspect, in the liquid crystal panel display device according to the tenth aspect, the solder resist has a Young's modulus of 5 k.
The configuration is in the range of gf / mm ^{2 to} 70 kgf / mm ² .

Therefore, the TCP semiconductor device is less likely to warp, and the manufacturing cost of the tape carrier can be reduced.

As a result, it is possible to provide a large-sized liquid crystal panel display device with good yield.

According to a twelfth aspect of the present invention, as described above, in the liquid crystal panel display of the eleventh aspect, the solder resist has a thickness of 5 μm or less.
The configuration is in the range of 45 μm.

Therefore, the TCP semiconductor device is less likely to warp, and the manufacturing cost of the tape carrier can be reduced.

As a result, there is an effect that a large-sized liquid crystal panel display device can be provided with good yield.

According to a thirteenth aspect of the present invention, as described above, in the liquid crystal panel display according to any one of the tenth to twelfth aspects, the solder resist includes a filler for determining its viscosity. 10wt% -4
The composition is contained in the range of 0 wt%.

Therefore, the thixotropy of the solder resist is enhanced, bleeding is hardly generated at the edge of the solder resist during printing, and the patterning accuracy is improved.

As a result, it is possible to provide a liquid crystal panel display device with good yield.

As described above, in the liquid crystal panel display device according to the fourteenth aspect, in the liquid crystal panel display device according to any one of the tenth to thirteenth aspects, the solder resist is made of rubber, polyimide, epoxy, This is a configuration made of any one of a material based on a silicone, a silicone, or a urethane.

Therefore, the metal wiring pattern of the tape carrier package semiconductor device is hardly broken, and a large-sized liquid crystal panel display device can be provided with good yield.

According to a fifteenth aspect of the present invention, as described above, in the liquid crystal panel display according to any one of the tenth to fourteenth aspects, the tape carrier and the driving semiconductor element are electrically connected. The periphery of the electrically connected portion is covered with a liquid resin having an insulating property so that the end of the liquid resin forms an angle of 70 ° or less with the upper surface of the solder resist.

Therefore, the adhesion between the liquid resin and the solder resist is enhanced, and the tape carrier package semiconductor device can be manufactured with a high yield. Therefore, there is an effect that a liquid crystal panel display device can be provided with a high yield.

[Brief description of the drawings]

FIGS. 1A, 1B, and 1C are explanatory diagrams illustrating a disconnection test method according to an embodiment of the present invention.

FIGS. 2A and 2B show the structure of a tape carrier package semiconductor device according to an embodiment of the present invention, wherein FIG.
(B) is a sectional view taken along line CC ′ of (a).

FIG. 3 is a flowchart illustrating a process of manufacturing the tape carrier package semiconductor device of FIG. 2;

FIG. 4 is an explanatory view illustrating that bleed does not occur in the tape carrier package semiconductor device of FIG. 2;

FIG. 5 is an explanatory diagram for explaining the adhesion between a liquid resin and a solder resist in the tape carrier package semiconductor device of FIG. 2;

FIG. 6 is a structural diagram showing a structure of a liquid crystal panel display device according to an embodiment of the present invention.

7A and 7B show the structure of a conventional tape carrier package semiconductor device, wherein FIG. 7A is a plan view, and FIG.
FIG. 3 is a sectional view taken along line A ′.

FIG. 8 is a flowchart illustrating a step of manufacturing a tape carrier of the tape carrier package semiconductor device of FIG. 7;

9A and 9B show the structure of a conventional tape carrier package semiconductor device, wherein FIG. 9A is a plan view, and FIG.
It is a sectional view taken on the line B '.

10A is an explanatory diagram illustrating a state when the tape carrier package semiconductor device of FIG. 7 is mounted, and FIG. 10B is an explanatory diagram illustrating a state when the tape carrier package semiconductor device of FIG. 9 is mounted.

FIGS. 11A and 11B are explanatory diagrams illustrating a conventional disconnection test method.

FIG. 12 is an explanatory diagram for explaining occurrence of bleed in a conventional tape carrier package semiconductor device.

FIG. 13 is an explanatory diagram illustrating a disconnection occurrence position when the tape carrier package semiconductor device of FIG. 7 is mounted.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 TEG (tape carrier) 2 Polyimide base material (insulating tape) 4 Copper wiring pattern (metal wiring pattern) 6 Solder resist (insulating protective film) 11 Liquid crystal panel 12 PWB substrate (circuit board) 21 Flex TCP semiconductor device (tape carrier package) 22) Polyimide base material (insulating tape) 23 Tape carrier 24 Driver IC chip (driving semiconductor element) 26 Inner lead (metal wiring pattern) 27 Input outer lead (metal wiring pattern) 28 Output outer lead (metal wiring) Pattern) 29 test pad (metal wiring pattern) 34 resin (liquid resin) 51 liquid crystal panel display device 52 liquid crystal panel 53 PWB substrate (circuit substrate)

Claims (15)

[Claims] 1. A tape carrier package semiconductor device comprising: a tape carrier having an insulating tape provided with a metal wiring pattern and an insulating protective film for insulatingly covering the metal wiring pattern; and a driving semiconductor element for driving a liquid crystal panel. In a disconnection test method for performing a disconnection test on a test tape carrier having a structure equivalent to a tape carrier, one end of the test tape carrier is connected to a liquid crystal panel and the other end is connected to a circuit board that outputs a signal for driving the liquid crystal panel. In a state where the test tape carrier is curved so that the liquid crystal panel and the circuit board are opposed to each other, the test tape carrier is exposed to a temperature environment which changes at a constant cycle, and the test metal wiring pattern of the test tape carrier is exposed. A disconnection test method, wherein the number of cycles at which a disconnection occurs is obtained. 2. A tape carrier having an insulating tape provided with a metal wiring pattern and an insulating protective film for insulatingly covering the metal wiring pattern, and a driving semiconductor element for driving a liquid crystal panel, and one end of the liquid crystal panel. 2. A tape carrier package semiconductor device connected to a circuit board that outputs a signal for driving a liquid crystal panel, the other end of which is connected to a circuit board that outputs a signal for driving a liquid crystal panel. A tape carrier package semiconductor device, characterized in that the wiring pattern is made of a material specified not to be disconnected within a predetermined number of cycles or less. 3. The disconnection test method according to claim 1, wherein the insulating protective film has a cycle of repeating 85 ° C. and −30 ° C. for 30 minutes each.
3. The tape carrier package semiconductor device according to claim 2, wherein one kind of solder resist specified not to be disconnected in a cycle or less is used. 4. A solder resist having a Young's modulus of 5 kgf.
/ Mm ² tape carrier package semiconductor device according to claim 3, characterized in that the range of ～70Kgf / mm ^2. 5. A solder resist having a thickness of 5 μm to 45 μm.
The tape carrier package semiconductor device according to claim 4, wherein the length is in a range of μm. 6. The tape carrier package semiconductor device according to claim 3, wherein said solder resist contains a filler for determining its viscosity in a range of 10 wt% to 40 wt%. 7. The tape according to claim 3, wherein the solder resist is made of any one of rubber, polyimide, epoxy, silicone, and urethane. Carrier package semiconductor device. 8. The periphery of a portion where the tape carrier and the driving semiconductor element are electrically connected is formed by a liquid resin having an insulating property such that an end of the liquid resin is not more than 70 ° with respect to the upper surface of the solder resist. 8. The tape carrier package semiconductor device according to claim 3, wherein the tape carrier package semiconductor device is covered so as to form an angle. 9. A tape carrier having an insulating tape provided with a metal wiring pattern and an insulating protective film for insulatingly covering the metal wiring pattern, a driving semiconductor element for driving a liquid crystal panel, and one end of the liquid crystal panel. 2. The disconnection test method according to claim 1, wherein the liquid crystal panel display device includes a tape carrier package semiconductor device connected to a circuit board that outputs a signal for driving the liquid crystal panel. A liquid crystal panel display device characterized in that the test metal wiring pattern is made of a material specified not to be disconnected within a predetermined number of cycles or less. 10. The disconnection test method according to claim 1, wherein the insulating protective film has a cycle of repeating 85 ° C. and −30 ° C. for 30 minutes each.
The liquid crystal panel display device according to claim 9, wherein the liquid crystal panel display device is one type of solder resist that is specified not to be disconnected in 0 cycles or less. 11. The solder resist has a Young's modulus of 5 kg.
The liquid crystal panel display device according to claim 10, characterized in that the range of ^{f / mm 2 ~70kgf / mm 2} . 12. A solder resist having a thickness of 5 μm to 4 μm.
The liquid crystal panel display device according to claim 11, wherein the distance is in a range of 5 µm. 13. The liquid crystal panel display device according to claim 10, wherein said solder resist contains a filler for determining its viscosity in a range of 10 wt% to 40 wt%. 14. The liquid crystal according to claim 10, wherein the solder resist is made of any one of rubber, polyimide, epoxy, silicone, and urethane. Panel display device. 15. An end portion of the liquid resin around the portion where the tape carrier and the driving semiconductor element are electrically connected to each other by an insulating liquid resin so that an end of the liquid resin is 70 ° or less with respect to the upper surface of the solder resist. The liquid crystal panel display device according to any one of claims 10 to 14, wherein the liquid crystal panel display device is covered so as to form an angle.