JPH11118650A - Pressure sensor - Google Patents

Pressure sensor

Info

Publication number
JPH11118650A
JPH11118650A JP9293339A JP29333997A JPH11118650A JP H11118650 A JPH11118650 A JP H11118650A JP 9293339 A JP9293339 A JP 9293339A JP 29333997 A JP29333997 A JP 29333997A JP H11118650 A JPH11118650 A JP H11118650A
Authority
JP
Japan
Prior art keywords
pressure
hollow portion
fluid
diaphragm
pressure sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9293339A
Other languages
Japanese (ja)
Other versions
JP3404563B2 (en
Inventor
Kiyoshi Takahashi
潔 高橋
Koichi Kira
浩一 吉良
Minoru Nakamura
実 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RKC Instrument Inc
Original Assignee
RKC Instrument Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RKC Instrument Inc filed Critical RKC Instrument Inc
Priority to JP29333997A priority Critical patent/JP3404563B2/en
Publication of JPH11118650A publication Critical patent/JPH11118650A/en
Application granted granted Critical
Publication of JP3404563B2 publication Critical patent/JP3404563B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Measuring Fluid Pressure (AREA)

Abstract

PROBLEM TO BE SOLVED: To reduce a measuring error by making a strongly acidic fluid difficult to impregnate a protective diaphragm even after the use for a long period of time. SOLUTION: A hollow part 5 communicating with an exterior is provided at a pressure guide part 1. A straining unit 13 for outputting an electric signal responsive to a pressure displacement of strongly acidic fluid pressure is disposed to block the part 5. A protective diaphragm 11 made of aluminum oxide single crystal is brought into contact with the part 5 side of the unit 13. Pressure of the fluid is propagated to the unit 13 via the diaphragm 11.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は圧力センサに係り、
例えば強い酸性を有する流体(薬品)の圧力測定に好適
する圧力センサの改良に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pressure sensor,
For example, the present invention relates to an improvement of a pressure sensor suitable for measuring pressure of a fluid (chemical) having strong acidity.

【0002】[0002]

【従来の技術】強い酸性の流体を扱う装置として例えば
半導体製造装置がある。この半導体製造装置は、ふっ酸
を含む硝酸を主体としたエッチング液をポンプで循環さ
せて半導体基板をエッチングする、いわゆる湿式エッチ
ング方法を採用したもので、そのエッチング液の流圧を
圧力センサで測定しながら稼働させている。
2. Description of the Related Art As an apparatus for handling a strongly acidic fluid, for example, there is a semiconductor manufacturing apparatus. This semiconductor manufacturing apparatus employs a so-called wet etching method in which an etching solution mainly composed of nitric acid containing hydrofluoric acid is circulated by a pump to etch a semiconductor substrate, and a flow pressure of the etching solution is measured by a pressure sensor. While running.

【0003】従来、このような半導体製造装置に用いら
れる圧力センサは、耐食性材料からなる円柱状の導圧部
にこれを貫通する中空部を設け、その中空部を塞ぐよう
に静電容量型感圧素子としての起歪体を導圧部に重ね、
この起歪体を導圧部へ押圧するようにして筒型ケース内
に導圧部とともに収納した構成が知られている。
Conventionally, a pressure sensor used in such a semiconductor manufacturing apparatus is provided with a hollow portion penetrating a cylindrical pressure guiding portion made of a corrosion-resistant material, and a capacitive sensor is formed so as to close the hollow portion. A strain element as a pressure element is placed on the pressure guide,
A configuration is known in which the strain body is housed in a cylindrical case together with the pressure guiding portion so as to be pressed against the pressure guiding portion.

【0004】しかも、起歪体の受圧(接液)面における
エッチング液による腐食を防止する観点から、耐食性の
良好なふっ素樹脂からなる保護ダイヤフラムを重ね、こ
の保護ダイヤフラムを介してエッチング液に接液させる
二重構造とすることにより、経時的に正確な圧力測定を
確保している。そして、この圧力センサでは、中空部の
一端から流入させたエッチング液を保護ダイヤフラムに
接液させ、エッチング液の圧力に応じて起歪体を変位さ
せることによってその変位に応じた電気信号を出力させ
ている。
In addition, from the viewpoint of preventing corrosion by the etching solution on the pressure receiving (liquid contacting) surface of the flexure element, a protective diaphragm made of fluororesin having good corrosion resistance is overlaid, and the protective diaphragm comes into contact with the etching solution via the protective diaphragm. With the double structure, accurate pressure measurement over time is ensured. In this pressure sensor, the etching liquid flowing from one end of the hollow portion is brought into contact with the protection diaphragm, and the strain sensor is displaced in accordance with the pressure of the etching liquid to output an electric signal corresponding to the displacement. ing.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、上述し
た圧力センサでは、起歪体の接液面側にふっ素樹脂から
なる保護ダイヤフラムを重ねた二重構造としても、次の
ような解決すべき課題がある。すなわち、ふっ素樹脂は
耐薬品性に優れた材料であるものの、例えばふっ酸や発
煙硝酸等薬液によっては、長期間の使用によって徐々に
薬液が保護ダイヤフラムを浸透して起歪体に到達し、起
歪体と保護ダイヤフラム間に薬液ガスとなって溜まって
その間に微小な圧力が負荷された状態を発生し、起歪体
の零点が変化して測定誤差が生じ易くなる難点がある。
However, the pressure sensor described above has the following problems to be solved even if it has a double structure in which a protective diaphragm made of fluororesin is superposed on the liquid contact surface side of the strain generating element. is there. That is, although fluororesin is a material with excellent chemical resistance, depending on a chemical solution such as hydrofluoric acid or fuming nitric acid, the chemical solution gradually penetrates the protective diaphragm over a long period of use and reaches the strain-generating body. There is a problem in that a chemical gas is accumulated between the strain body and the protection diaphragm, and a state in which a small pressure is applied therebetween is generated, and the zero point of the strain body changes, so that a measurement error easily occurs.

【0006】そして、この状態が続くと、薬液が起歪体
内部に拡散し、徐々に起歪体の電極や端子、これらに接
続されたケーブル等を腐食させて測定不能状態になる心
配もある。さらに、保護ダイヤフラムはふっ素樹脂を切
削加工して製作するのが一般的であるが、切削加工では
その表面の粗さと平面度の加工精度に限界があり、特に
平面度の凹凸がセンサの測定精度を低下させ易い。
If this state continues, there is a concern that the chemical solution diffuses into the strain body, gradually corrodes the electrodes and terminals of the strain body, the cables connected thereto, and the like, and the measurement becomes impossible. . Furthermore, protective diaphragms are generally manufactured by cutting fluororesin, but the cutting process has limitations on the surface roughness and the processing accuracy of flatness. Is easily reduced.

【0007】これを改善するためには、従来、保護ダイ
ヤフラムの起歪体との当接面にふっ素グリースを塗付し
て起歪体との密着状態を改善する手法も提案されている
が、圧力の伝達ロスやばらつきが生じたり製造コストが
アップする難点がある。さらにまた、ふっ素樹脂製の保
護ダイヤフラムは、繰り返しの負荷によって平面度が微
小に変化し、長期間の使用ではセンサ出力が徐々に変化
して、安定した精度を保持し難い。
In order to improve this, conventionally, there has been proposed a method of applying a fluorine grease to a contact surface of the protective diaphragm with the strain generating body to improve a close contact state with the strain generating body. There is a problem in that transmission loss and variation in pressure occur and manufacturing costs increase. Furthermore, in the case of a protective diaphragm made of fluororesin, the flatness changes minutely due to repeated load, and the sensor output gradually changes over a long period of use, and it is difficult to maintain stable accuracy.

【0008】本発明はこのような従来の欠点を解決する
ためになされたもので、強酸性流体の圧力を長期間測定
しても経時的に正確な測定が可能で耐久性を確保できる
圧力センサを提供することを目的とする。
SUMMARY OF THE INVENTION The present invention has been made to solve such a conventional drawback. A pressure sensor capable of accurately measuring the pressure of a strongly acidic fluid over time for a long period of time and ensuring durability. The purpose is to provide.

【0009】[0009]

【課題を解決するための手段】このような課題を解決す
るために本発明に係る第1の構成は、外部へ連通する中
空部を有する導圧部と、その中空部を塞ぐように固定さ
れ中空部内の流体圧力に基づく変位に応じた電気信号を
出力する起歪体とを有する圧力センサであり、その起歪
体の中空部側に、流体の圧力を起歪体側へ伝達する酸化
アルミニウム単結晶からなる保護ダイヤフラムを介在さ
せたものである。そして、この第1の構成において、上
記保護ダイヤフラムにおける流体の接液面に三フッ化塩
化エチレン樹脂からなるフィルムバリヤ層を形成すると
良い。
According to a first aspect of the present invention, there is provided a pressure guiding portion having a hollow portion communicating with the outside, and a pressure guiding portion fixed to close the hollow portion. A pressure sensor that outputs an electric signal corresponding to a displacement based on a fluid pressure in the hollow portion. An aluminum oxide unit that transmits the pressure of the fluid to the strain member side at the hollow portion side of the pressure sensor. This is one in which a protective diaphragm made of a crystal is interposed. In the first configuration, it is preferable to form a film barrier layer made of a trifluorinated ethylene resin on the surface of the protective diaphragm that contacts the fluid.

【0010】また、本発明に係る第2の構成は、外部へ
連通する中空部を有する導圧部と、その中空部を塞ぐよ
うに固定され中空部内の流体圧力に基づく変位に応じた
電気信号を出力する起歪体とを有する圧力センサであ
り、その起歪体の中空部側に、流体の圧力を起歪体側へ
伝達する炭化シリコン層からなる保護ダイヤフラムを介
在させたものである。
A second structure according to the present invention comprises a pressure guiding portion having a hollow portion communicating with the outside, and an electric signal which is fixed so as to close the hollow portion and corresponds to a displacement based on a fluid pressure in the hollow portion. And a protective diaphragm comprising a silicon carbide layer for transmitting the pressure of the fluid to the flexure element side is interposed on the hollow side of the flexure element.

【0011】[0011]

【発明の実施の形態】以下本発明の実施の形態を図面を
参照して説明する。図1は本発明の圧力センサに係る第
1の実施の形態を示す縦断面図である。図1において、
導圧部1は例えばPTFE(ポリテトラフルオロエチレ
ン)合成樹脂から円柱状に成形されるとともに外周に3
箇所段部を有してなり、一方の先端(図中下端)の最も
細い部分から順次太くなるとともに、最も細い部分と最
も太い部分外周にはねじ溝3a、3bが形成されてい
る。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a longitudinal sectional view showing a first embodiment according to the pressure sensor of the present invention. In FIG.
The pressure guiding portion 1 is formed into a cylindrical shape from, for example, PTFE (polytetrafluoroethylene) synthetic resin and has
It has a stepped portion, and one end (the lower end in the figure) is gradually thickened from the thinnest portion, and thread grooves 3a, 3b are formed on the outer periphery of the thinnest portion and the thickest portion.

【0012】導圧部1には下端から途中で若干内径の広
がった中空部5が上端まで軸方向に沿って貫通形成さ
れ、上端面側でろうと状に拡開している。導圧部1の上
端面において、外周に近い部分には凹溝7が環状に形成
されており、この凹溝7内には弾性を有するOリング9
がはめられ、これに保護ダイヤフラム11が中空部5を
塞ぐように当接させて重ねられている。
A hollow portion 5 whose inner diameter is slightly widened from the lower end to the middle thereof is formed in the pressure guiding portion 1 in the axial direction to the upper end, and expands like a funnel at the upper end surface. On the upper end surface of the pressure guiding portion 1, a groove 7 is formed annularly in a portion near the outer periphery, and an O-ring 9 having elasticity is formed in the groove 7.
The protective diaphragm 11 is overlapped with the protective diaphragm 11 so as to close the hollow portion 5.

【0013】保護ダイヤフラム11は、酸化アルミニウ
ム(Al23)単結晶、より具体的にはサファイヤ単結
晶によって偏平かつ円盤状に形成されている。保護ダイ
ヤフラム11には、例えば静電容量型感圧素子(圧力エ
レメント)としての起歪体13が密着するように重ねら
れている。
The protective diaphragm 11 is made of aluminum oxide (Al 2 O 3 ) single crystal, more specifically, sapphire single crystal, and is formed in a flat and disk shape. A strain-generating body 13 as, for example, a capacitance-type pressure-sensitive element (pressure element) is overlaid on the protective diaphragm 11 so as to be in close contact with each other.

【0014】起歪体13は、保護ダイヤフラム11と同
様な偏平な円盤状となって内部に対向電極間を有し、こ
れら対向する電極間の容量が保護ダイヤフラム11から
の押圧変位によって変化する点を利用する静電容量型と
なっており、直流電圧の印加によってその変位に応じた
電気信号に変換してリード線15から出力する公知のも
のである。これら起歪体13、保護ダイヤフラム11お
よび導圧部1には一端開放の筒型押えねじ17が被せら
れている。符号17aは押えねじ17の端面部、符号1
7bは端面部17aに設けたリード線15の導出孔であ
る。
The strain body 13 has a flat disk shape similar to that of the protection diaphragm 11 and has a space between opposing electrodes therein. The point at which the capacitance between these opposing electrodes changes due to the pressing displacement from the protection diaphragm 11. Is a known type that converts into an electric signal corresponding to the displacement by applying a DC voltage and outputs the electric signal from the lead wire 15. The strain body 13, the protective diaphragm 11, and the pressure guiding portion 1 are covered with a cylindrical presser screw 17 which is open at one end. Reference numeral 17a denotes an end face of the holding screw 17, reference numeral 1
7b is a lead-out hole for the lead wire 15 provided on the end face 17a.

【0015】この押えねじ17の先端内側にはねじ溝
(図示せず)が形成され、このねじ溝が導圧部1のねじ
溝3bにねじ込まれており、押えねじ17の端面部17
aによって起歪体13が導圧部1方向に抑えつけられ、
起歪体13、保護ダイヤフラム11、Oリング9および
導圧部1の端面が強く圧接されている。そのため、導圧
部1の上端側では保護ダイヤフラム11との間で密封構
造になって中空部5内に満たされた例えばエッチング液
が漏れないようになっている。
A screw groove (not shown) is formed inside the tip end of the holding screw 17, and the screw groove is screwed into the screw groove 3 b of the pressure guiding section 1.
a restricts the flexure element 13 in the direction of the pressure-guiding section 1,
The end faces of the flexure element 13, the protective diaphragm 11, the O-ring 9, and the pressure guiding portion 1 are strongly pressed. For this reason, a sealing structure is formed between the upper end side of the pressure guiding section 1 and the protection diaphragm 11 so that, for example, the etching liquid filled in the hollow section 5 does not leak.

【0016】これら導圧部1および押えねじ17の外周
には図示しないキャップ等が被せられて製品化される。
このように構成された本発明の圧力センサは、導圧部1
のねじ溝3aを例えば半導体製造装置(図示せず)にお
けるエッチング液の循環系にねじ込み連結すれば、中空
部5内がエッチング液で満たされるとともに保護ダイヤ
フラム11に接液する。
A cap or the like (not shown) is put on the outer periphery of the pressure guiding portion 1 and the holding screw 17 to produce a product.
The pressure sensor of the present invention configured as described above has a pressure guiding portion 1.
When the screw groove 3a is screwed and connected to, for example, a circulation system of an etching solution in a semiconductor manufacturing apparatus (not shown), the hollow portion 5 is filled with the etching solution and comes into contact with the protective diaphragm 11.

【0017】そして、エッチング液の圧力変位に応じた
保護ダイヤフラム11の変位を介して起歪体13が変位
し、その押圧変位に応じたレベルの電気信号がリード線
15から出力される。しかも、サファイヤ単結晶板は、
ふっ酸や発煙硝酸等薬液に対して耐薬品性に優れるとと
もに浸透も殆どなく、これを用いた保護ダイヤフラム1
1にエッチング液が接液しても、エッチング液の起歪体
13への浸透が抑えられ、保護ダイヤフラム11と起歪
体13間にガスが溜まることがなく、長期間にわたって
使用しても正確な測定および耐久性を確保できる。
Then, the flexure element 13 is displaced through the displacement of the protective diaphragm 11 in accordance with the pressure displacement of the etching solution, and an electric signal of a level corresponding to the pressure displacement is output from the lead wire 15. Moreover, the sapphire single crystal plate is
It has excellent chemical resistance to chemical liquids such as hydrofluoric acid and fuming nitric acid and hardly penetrates.
Even if the etching liquid comes into contact with 1, the permeation of the etching liquid into the strain body 13 is suppressed, and no gas is accumulated between the protective diaphragm 11 and the strain body 13, so that even if used for a long time, Measurement and durability can be secured.

【0018】しかも、サファイヤ単結晶板は、平面度が
10μm程度と極めて高く、従来のようにふっ素グリー
スを使用しなくても、保護ダイヤフラム11と起歪体1
3間の面接触精度を高く維持できるので、この点からも
正確な測定が可能である。
Further, the sapphire single crystal plate has a very high flatness of about 10 μm, and the protective diaphragm 11 and the strain generating element 1 can be formed without using fluorine grease as in the prior art.
Since the surface contact accuracy between the three can be kept high, accurate measurement is possible from this point as well.

【0019】図2は、起歪体13に厚み0.1mm程度
の保護ダイヤフラム11を重ねた第1の構成において、
定格圧力を負荷したときのセンサの出力を示す特性図で
あり、これから分るように本発明の圧力センサでは負荷
圧力に対する出力精度が良好なことが分る。さらに、サ
ファイヤ単結晶板は繰り返し負荷による平面度の変化も
ないので、これを保護ダイヤフラム11に用いることに
より、長期間安定した精度を保持することが可能とな
る。
FIG. 2 shows a first configuration in which a protective diaphragm 11 having a thickness of about 0.1 mm is superimposed on a flexure element 13.
FIG. 5 is a characteristic diagram showing the output of the sensor when a rated pressure is applied, and as can be seen from the graph, it can be seen that the pressure sensor of the present invention has good output accuracy with respect to the load pressure. Further, since the sapphire single crystal plate does not change its flatness due to the repeated load, by using the sapphire single crystal plate for the protective diaphragm 11, stable accuracy can be maintained for a long time.

【0020】そして、上述した図1の構成による圧力セ
ンサにおいて、導圧部1と保護ダイヤフラム11間の耐
圧シール性は9Kgf/cm2 程度であるが、この導圧
部1と保護ダイヤフラム11間の耐圧シール性を向上さ
せれば、より高いレンジの圧力測定が可能となる。
In the pressure sensor having the configuration shown in FIG. 1 described above, the pressure-resistant seal between the pressure guiding portion 1 and the protection diaphragm 11 is about 9 kgf / cm 2 . If the pressure-resistant sealing property is improved, pressure measurement in a higher range can be performed.

【0021】ところで、サファイヤ単結晶板を保護ダイ
ヤフラム11に使用した場合、上記のように耐薬品性、
薬液の浸透性防止、精度の安定性という観点で優れてい
るが、薬液に接液した部分から微小量の金属成分が溶出
する可能性が若干心配される。そこで、図3に示すよう
に、保護ダイヤフラム11における導圧部1側、すなわ
ちエッチング液に接液する面に、三フッ化塩化エチレン
樹脂(PCTFE)フィルムからなるコーティング層と
してのフィルムバリヤ層19をOリング9を介して導圧
部1に押し付けるとともにエッチング液に接液させると
良い。他の構成は図1と同様である。
By the way, when a sapphire single crystal plate is used for the protective diaphragm 11, the chemical resistance and
Although it is excellent in terms of preventing the penetration of the chemical solution and stabilizing the accuracy, there is some concern that a minute amount of the metal component may be eluted from the portion in contact with the chemical solution. Therefore, as shown in FIG. 3, a film barrier layer 19 as a coating layer made of an ethylene trifluorochloride resin (PCTFE) film is provided on the pressure guiding portion 1 side of the protective diaphragm 11, that is, on the surface in contact with the etching solution. It is preferable to press against the pressure guiding portion 1 via the O-ring 9 and to make it come into contact with the etching liquid. Other configurations are the same as those in FIG.

【0022】このような圧力センサでは、三フッ化塩化
エチレン樹脂(PCTFE)が緻密で硬い材料であるこ
とから、保護ダイヤフラム11に三フッ化塩化エチレン
樹脂(PCTFE)フィルムからなるフィルムバリヤ層
19を形成して三重保護ダイヤフラム構造にすることに
より、起歪体13やエッチング液へ微小金属成分が溶出
するのを阻止することが可能になる。
In such a pressure sensor, since the ethylene trifluoride chloride (PCTFE) is a dense and hard material, the protective diaphragm 11 is provided with the film barrier layer 19 made of the ethylene trifluoride chloride (PCTFE) film. The formation of the triple protection diaphragm structure makes it possible to prevent the elution of the minute metal component into the strain body 13 and the etching solution.

【0023】次に、図4は本発明に係る第2の構成を説
明する縦断面図であり、第1の構成に対してサファイヤ
単結晶板の代わりに、厚み0.2mm程度の炭化シリコ
ン(特に、β−SiC)の膜を起歪体13の片面に例え
ば熱CVDで成膜して保護ダイヤフラム21を形成した
ものであり、他の構成は第1の構成と同様である。この
ように、炭化シリコン自体で形成した保護ダイヤフラム
21を用いることにより、炭化シリコン(SiC)が緻
密で硬い材料であることから、耐薬品性、薬液の浸透性
防止、精度の安定性等優れた特性を保持することが可能
となるし、保護ダイヤフラム21から微小金属成分も溶
出しない。なお、上述した本発明の圧力センサは、強酸
性のエッチング液の圧力測定に限らず、強酸性の液体や
気体等の流体の流圧測定に好適する。
Next, FIG. 4 is a longitudinal sectional view for explaining a second configuration according to the present invention. In place of the sapphire single crystal plate, silicon carbide (about 0.2 mm thick) is used in the first configuration. In particular, the protective diaphragm 21 is formed by forming a film of (β-SiC) on one surface of the strain body 13 by, for example, thermal CVD, and the other configuration is the same as the first configuration. As described above, since the silicon carbide (SiC) is a dense and hard material by using the protective diaphragm 21 formed of silicon carbide itself, it is excellent in chemical resistance, prevention of penetration of a chemical solution, stability of accuracy, and the like. The characteristics can be maintained, and no minute metal components elute from the protective diaphragm 21. The above-described pressure sensor of the present invention is not limited to measuring the pressure of a strongly acidic etching liquid, but is also suitable for measuring the flow pressure of a fluid such as a strongly acidic liquid or gas.

【0024】[0024]

【発明の効果】以上説明したように本発明に係る第1の
構成は、外部へ連通する中空部を有する導圧部と、その
中空部を塞ぐように固定され中空部内の流体圧力に基づ
く変位に応じた電気信号を出力する起歪体とを有し、そ
の流体圧力を起歪体側へ伝達する酸化アルミニウム単結
晶からなる保護ダイヤフラムをその起歪体の中空部側に
介在させたから、耐薬品性に優れ、薬液の浸透も阻止で
きるうえ、繰り返しの負荷による平面度の変化もなく、
長期間に安定したセンサ精度を保持することが可能とな
る。そして、この第1の構成において、上記保護ダイヤ
フラムにおける流体の接液面に三フッ化塩化エチレン樹
脂からなるフィルムバリヤ層を形成すると、上述した効
果に加えて、薬液中への微小金属成分の溶出も抑えるこ
とが可能となる利点がある。さらに、本発明に係る第2
の構成は、起歪体に重ねて薬液に接液する保護ダイヤフ
ラム自体を炭化シリコンで形成したから、耐薬品性の向
上、薬液の浸透性防止、精度の安定性等優れた特性を保
持することが可能となるうえ、微小金属成分の溶出もな
い。
As described above, the first structure according to the present invention comprises a pressure guiding portion having a hollow portion communicating with the outside, a displacement portion fixed to close the hollow portion, and a displacement based on fluid pressure in the hollow portion. And a protective diaphragm made of aluminum oxide single crystal that transmits the fluid pressure to the strain-generating body side is interposed in the hollow part side of the strain-generating body. It has excellent properties, can prevent the penetration of chemicals, and has no change in flatness due to repeated loading.
It is possible to maintain stable sensor accuracy for a long period of time. In the first configuration, when the film barrier layer made of the ethylene trifluoride chloride resin is formed on the liquid contact surface of the fluid in the protective diaphragm, in addition to the above-described effects, the elution of the fine metal component into the chemical solution is achieved. There is an advantage that can be suppressed. Further, the second aspect of the present invention
Because the protective diaphragm itself, which is placed on the strain body and comes into contact with the chemical solution, is formed of silicon carbide, it has excellent characteristics such as improved chemical resistance, prevention of chemical solution penetration, and stability of accuracy. And no elution of minute metal components.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1の構成に係る圧力センサの実施の
形態を示す縦断面図である。
FIG. 1 is a longitudinal sectional view showing an embodiment of a pressure sensor according to a first configuration of the present invention.

【図2】図1の第1の構成に係る圧力センサが示す特性
図である。
FIG. 2 is a characteristic diagram of the pressure sensor according to the first configuration of FIG.

【図3】図1の第1の構成の変形例を示す縦断面図であ
る。
FIG. 3 is a longitudinal sectional view showing a modification of the first configuration in FIG. 1;

【図4】本発明の第2の構成に係る圧力センサの実施の
形態を示す縦断面図である。
FIG. 4 is a longitudinal sectional view showing an embodiment of a pressure sensor according to a second configuration of the present invention.

【符号の説明】[Explanation of symbols]

1 導圧部 3a、3b ねじ溝 5 中空部 7 凹溝 9 Oリング 11、21 保護ダイヤフラム 13 起歪体 15 リード線 17 押えねじ 17a 端面部 17b 導出孔 19 フィルムバリヤ層 DESCRIPTION OF SYMBOLS 1 Pressure-guiding part 3a, 3b Screw groove 5 Hollow part 7 Concave groove 9 O-ring 11, 21 Protective diaphragm 13 Strain generator 15 Lead wire 17 Holding screw 17a End face part 17b Lead-out hole 19 Film barrier layer

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 外部へ連通する中空部を有する導圧部
と、前記中空部を塞ぐように固定され前記中空部内の流
体圧力に基づく変位に応じた電気信号を出力する起歪体
とを有する圧力センサにおいて、 前記起歪体の前記中空部側に、前記流体の圧力を前記起
歪体側へ伝達する酸化アルミニウム単結晶からなる保護
ダイヤフラムが介在されてなることを特徴とする圧力セ
ンサ。
1. A pressure guiding portion having a hollow portion communicating with the outside, and a strain body fixed to close the hollow portion and outputting an electric signal according to a displacement based on a fluid pressure in the hollow portion. In the pressure sensor, a protection diaphragm made of aluminum oxide single crystal for transmitting the pressure of the fluid to the strain generating element side is interposed on the hollow portion side of the strain generating element.
【請求項2】 前記保護ダイヤフラムにおける前記流体
の接液面に、三フッ化塩化エチレン樹脂からなるフィル
ムバリヤ層が形成されてなる請求項1記載の圧力セン
サ。
2. The pressure sensor according to claim 1, wherein a film barrier layer made of a trichlorofluoroethylene resin is formed on a surface of the protective diaphragm that is in contact with the fluid.
【請求項3】 外部へ連通する中空部を有する導圧部
と、前記中空部を塞ぐように固定され前記中空部内の流
体圧力に基づく変位に応じた電気信号を出力する起歪体
とを有する圧力センサにおいて、 前記起歪体の前記中空部側に、前記流体の圧力を前記起
歪体側へ伝達する炭化シリコンからなる保護ダイヤフラ
ムが介在されてなることを特徴とする圧力センサ。
3. A pressure guiding portion having a hollow portion communicating with the outside, and a strain body fixed to close the hollow portion and outputting an electric signal according to a displacement based on a fluid pressure in the hollow portion. In the pressure sensor, a protection diaphragm made of silicon carbide for transmitting a pressure of the fluid to the strain generating element side is interposed on the hollow portion side of the strain generating element.
JP29333997A 1997-10-09 1997-10-09 Pressure sensor Expired - Lifetime JP3404563B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29333997A JP3404563B2 (en) 1997-10-09 1997-10-09 Pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29333997A JP3404563B2 (en) 1997-10-09 1997-10-09 Pressure sensor

Publications (2)

Publication Number Publication Date
JPH11118650A true JPH11118650A (en) 1999-04-30
JP3404563B2 JP3404563B2 (en) 2003-05-12

Family

ID=17793533

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29333997A Expired - Lifetime JP3404563B2 (en) 1997-10-09 1997-10-09 Pressure sensor

Country Status (1)

Country Link
JP (1) JP3404563B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001324398A (en) * 2000-03-07 2001-11-22 Anelva Corp Corrosion resistant vacuum sensor
JP2003161665A (en) * 2001-11-26 2003-06-06 Minebea Co Ltd Corrosion resistant pressure sensor
JP2006322783A (en) * 2005-05-18 2006-11-30 Dainippon Screen Mfg Co Ltd Pressure sensor and substrate processing apparatus
JP2007205550A (en) * 2006-02-06 2007-08-16 Tokai Rubber Ind Ltd Liquid-sealed type vibration isolation device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01128141U (en) * 1988-02-25 1989-09-01
JPH03501062A (en) * 1989-04-13 1991-03-07 エンドレス ウント ハウザー ゲゼルシヤフト ミツト ベシユレンクテル ハフツング ウント コンパニー pressure sensor
JPH07326770A (en) * 1991-07-12 1995-12-12 Terumo Corp Semiconductor pressure sensor and its manufacture
JPH09138177A (en) * 1995-11-14 1997-05-27 Yokogawa Electric Corp Pressure reception diaphragm

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01128141U (en) * 1988-02-25 1989-09-01
JPH03501062A (en) * 1989-04-13 1991-03-07 エンドレス ウント ハウザー ゲゼルシヤフト ミツト ベシユレンクテル ハフツング ウント コンパニー pressure sensor
JPH07326770A (en) * 1991-07-12 1995-12-12 Terumo Corp Semiconductor pressure sensor and its manufacture
JPH09138177A (en) * 1995-11-14 1997-05-27 Yokogawa Electric Corp Pressure reception diaphragm

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001324398A (en) * 2000-03-07 2001-11-22 Anelva Corp Corrosion resistant vacuum sensor
JP2003161665A (en) * 2001-11-26 2003-06-06 Minebea Co Ltd Corrosion resistant pressure sensor
JP2006322783A (en) * 2005-05-18 2006-11-30 Dainippon Screen Mfg Co Ltd Pressure sensor and substrate processing apparatus
JP2007205550A (en) * 2006-02-06 2007-08-16 Tokai Rubber Ind Ltd Liquid-sealed type vibration isolation device

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