JPH11116702A - Polyethylene terephthalate film for vapor deposition - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enhance the adhesion between a resin film and a vapor deposited thin film in a deposited film which comprises the resin film and the vapor deposited thin film of a metal or a metal compound laminated on the resin film. SOLUTION: In a polyethylene terephthalate film 10 for vapor deposition on which a vapor deposited thin film of a metal or a metal compound is laminated, the surface 2 of the polyethylene terephthalate film 10 for vapor deposition to be in contact with the vapor deposited thin film of a metal or a metal compound is formed so as to have 1.225-1.554 eV as a half width of a C-C bond of a benzene ring in C1s waveform separation, in the case where it is measured by an X-ray photoelectron spectroscopy (measurement condition: a source of an X-ray MgKα, an output 100 W).

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD The present invention relates to a polyethylene terephthalate film (hereinafter referred to as a PET film).
The present invention relates to a PET film for vapor deposition used when a vapor-deposited thin film of a metal or a metal compound is laminated thereon to obtain a vapor-deposited film useful as a gas barrier film. More specifically, PET for vapor deposition used for such a vapor deposition film
The present invention relates to a PET film for vapor deposition, which has a specific surface property and thus has an improved performance of preventing peeling of a metal or a metal compound from a vapor-deposited thin film. The present invention also relates to a laminated film comprising the PET film for vapor deposition and a vapor-deposited thin film of a metal or a metal compound.

[0002]

2. Description of the Related Art In recent years, packaging materials used for packaging foods, medical products, and the like include oxygen, water vapor, and other gases that alter the contents so as to suppress the alteration of the contents and maintain its effectiveness. It is required to have a gas barrier property for blocking the passage of (gas). In particular, food packaging materials are required to have such gas barrier properties in order to suppress oxidation and deterioration of proteins and fats and oils and to maintain taste and freshness. In addition, packaging materials for pharmaceuticals are required to have gas barrier properties in order to maintain sterility, suppress deterioration of active ingredients, and maintain efficacy.

Various resin films are used as a packaging material having a gas barrier property according to the purpose of use. For example, polymer resin films such as a polyvinyl alcohol film, a polyvinylidene chloride film, and the like, Laminated films are used.

[0004] In addition, the demand for high gas barrier properties for packaging materials, particularly, the maintenance of gas barrier properties under high temperature and high humidity environments, and the recent use of dechlorinated and dealuminized foils for packaging materials from the viewpoint of environmental protection. In response to the request, a thin film of a metal or metal compound such as silicon oxide (SiO _x ) such as silicon monoxide (SiO), aluminum oxide (AlO _x ), or aluminum (Al) is formed on a resin film represented by a PET film. 2. Description of the Related Art A vapor deposition film formed by a forming means such as vapor deposition has been developed.

[0005]

However, in the case of a vapor-deposited film in which the above-described metal or metal compound is formed on a resin film, the vapor-deposited thin film is an inorganic compound, and the resin film serving as a base of the vapor-deposited thin film is an organic compound. To be
Various physical properties such as mechanical properties, chemical properties, thermal properties, and electrical properties of both are very different.

[0006] Therefore, during the processing steps generally applied to packaging materials such as vapor deposition processing, printing processing, laminating processing and the like, and in the final use of packaging materials such as packaging bags and packaging containers, mechanical stress, A load such as thermal stress is applied, and peeling or defects (cracks, pinholes, etc.) occur near the interface between the metal or metal compound vapor-deposited thin film and the resin film, and gases such as oxygen and water vapor are generated from the peeling or defective portions. There is a problem that the high gas barrier property that should pass through is lowered.

[0007] In order to improve the adhesion between the resin film serving as the base of the vapor-deposited thin film and the vapor-deposited thin film, for example, the surface of the resin film is subjected to corona discharge treatment, ultraviolet irradiation treatment, plasma treatment, flame, or the like. There is a method (surface activation treatment method) of performing a treatment or a surface treatment with a chemical such as heat or alkali to activate the resin film surface and then depositing a metal or a metal compound.

However, according to this surface activation treatment method,
Excessive activation of the resin film surface causes excessive destruction of the molecular structure of the resin film surface, which in turn lowers the adhesion strength between the deposited thin film and the resin film, or activates the resin film surface Over time, there is a problem that the adhesion between the resin film and the deposited thin film is not stable. Furthermore, in the various surface activation treatment methods described above, since it is very difficult to control the molecular state of the surface of the obtained resin film, there is a problem that the adhesion strength between the resin film and the deposited thin film varies.

As another method, as a resin film serving as a base of a vapor-deposited thin film, a copolymer resin film obtained by copolymerizing the constituents of the resin film with other resin components, or another resin used for forming the resin film. There is a method using a co-extruded multilayer resin film that is co-extruded, and, at the time of forming the resin film, off-line or in-line on the surface of the resin film, ethyleneimine-based, amine-based, epoxy-based, urethane-based or polyester There is a method in which a coating agent such as a system is applied.

However, according to these methods, although the adhesion between the vapor-deposited thin film and the resin film is improved, the heat resistance of the resin film is inferior and the thermal dimensional stability is poor. When a thermal load is applied to the deposited film in the processing steps generally applied to packaging materials, the deposited thin film receives mechanical stress, which causes cracks, pinholes, etc. in the deposited thin film, and provides sufficient gas barrier properties. There is a problem that can not be.

SUMMARY OF THE INVENTION The present invention is to solve the above-mentioned problems of the prior art, and when producing a vapor-deposited film from a vapor-deposited thin film of a metal or a metal compound and a resin film, excellent adhesion to the vapor-deposited thin film is achieved. In the manufacturing process of a vapor-deposited film such as vapor deposition, printing and laminating, and in the process of bag making when forming the vapor-deposited film as a packaging material, the vapor-deposited film can be obtained in various packaging forms. When used, it is an object of the present invention to prevent separation between a metal or metal compound vapor-deposited thin film and a resin film, and to maintain high gas barrier properties.

Further, the present invention provides a method for producing a vapor-deposited film having a high gas barrier property comprising such a resin film and a vapor-deposited thin film of a metal or a metal compound.

[0013]

Means for Solving the Problems The present inventors have found that the above objects can be achieved by using a PET film having specific surface characteristics, and have completed the present invention.

That is, the present invention firstly provides a PET film on which a deposited thin film of a metal or a metal compound is laminated,
X-ray photoelectron spectroscopy measurement of the surface in contact with the deposited thin film of metal or metal compound (measurement conditions: X-ray source MgKα, output 100
W) A PET film for vapor deposition characterized in that the half width of the CC bond of the benzene ring in C1s waveform separation is 1.225 to 1.554 eV.

Further, as such a PET film for vapor deposition, a film whose surface is subjected to low-temperature plasma treatment is provided.

Second, the present invention provides a vapor-deposited film in which a vapor-deposited thin film of a metal or a metal compound is laminated on such a PET film for vapor deposition.

Third, as a method for producing such a vapor-deposited film, a low-temperature plasma treatment is applied to the surface of a PET film for vapor deposition on which a vapor-deposited thin film of a metal or a metal compound is laminated, and then a metal film is applied to the surface of the low-temperature plasma-treated PET film. Another object of the present invention is to provide a method characterized in that a deposited thin film of a metal compound is laminated, and the low-temperature plasma treatment and the deposition of the deposited thin film are performed by in-line processing.

The PET film for vapor deposition of the present invention comprises:
It is based on the following findings of the present inventors. That is, generally, according to X-ray photoelectron spectroscopy (XPS measurement), it is possible to analyze the types of atoms of about several nm from the surface of the substance to be measured, the types of atoms bonded to the atoms, and the bonding state thereof, In a PET film that has not been subjected to surface treatment such as plasma treatment, the half-width of the CC bond of the benzene ring in the PET molecular structure in C1s waveform separation is about 1.220 (XPS measurement conditions: X-ray source M
gKα, output 100W). P having such a half width
The ET film has low adhesion to a metal or a metal compound deposited thin film.

On the other hand, when the half-width of the CC bond of the benzene ring in the PET molecular structure in the C1s waveform separation is 1.225 to 1.554 eV by performing the surface treatment, It shows extremely good adhesion to the deposited thin film of metal or metal compound regardless of the method and conditions.

Therefore, according to the PET film for vapor deposition of the present invention, the vapor-deposited thin film of metal or metal compound laminated on the surface shows high adhesion, and the production process of vapor-deposited film such as vapor deposition, printing, lamination, etc. In processing steps such as bag making when forming a film as a packaging material, and when using a vapor-deposited film in various packaging forms, peeling of a vapor-deposited thin film of a metal or a metal compound is prevented. Therefore, the vapor-deposited film of the present invention obtained by laminating a vapor-deposited thin film of a metal or a metal compound on the vapor-deposited PET film of the present invention maintains high gas barrier properties.

[0021]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the drawings. In each of the drawings, the same reference numerals represent the same or equivalent components.

FIG. 1 shows a PET film 1 for vapor deposition of the present invention.
FIG. 2 is a cross-sectional view of FIG. 0, FIG. 2 is a vapor deposition film 20 in which a vapor deposition thin film 11 of a metal or a metal compound is laminated on a vapor deposition PET film 10, and FIG.
To the surface of the PET film 10 of the present invention
FIG. 1 is a schematic explanatory view of a vacuum vapor deposition and surface treatment apparatus 30 for producing a vapor deposited film 20 of the present invention by further laminating a vapor deposited thin film 11 of a metal or a metal compound.

In the PET film 10 for vapor deposition shown in FIG. 1, reference numeral 1 denotes a PET film serving as a base material, and reference numeral 2 denotes a surface on which a vapor deposited thin film 11 of a metal and a metal compound (see FIG. 2) is formed.

As the PET film 1, a sheet-like or film-like PET is used. In particular, it is preferable to use a biaxially stretched PET film from the viewpoint of thermal dimensional stability and heat resistance.

The PET film 1 can contain known additives such as an antistatic agent, an ultraviolet absorber, a plasticizer, a lubricant, and a coloring agent. (Measurement conditions: X-ray source MgKα, output 1)
00W) C-C of benzene ring in C1s waveform separation
In addition to the surface treatment performed to adjust the half width of the coupling to 1.225 to 1.554 eV, those having a plain surface that has not been subjected to corona treatment, coating treatment, and the like are preferable. Such a plain surface has a half-width of the CC bond of the benzene ring in the C1s waveform separation of XPS (measurement conditions: X-ray source MgKα, output 100 W) of 1.2.
It is smaller than 25 and usually shows about 1.220.

The thickness of the PET film 1 is not particularly limited.
The range of μm is preferred.

In the PET film 10 for vapor deposition of the present invention, the PET film 1 on the surface 2 of the PET film 1 as described above is used.
Regarding the binding state of the molecule, by XPS C1s waveform separation,
The value of the full width at half maximum (FWHM) of the CC bond of the benzene ring in the PET molecular structure is from 1.225 eV to 1.554 eV
Range.

The method for controlling the molecular bonding state on the surface 2 of the PET film 1 so as to show the half width of the CC bond of the benzene ring as described above, that is, the method for treating the PET film surface is not limited. Examples of the method include low-temperature plasma, corona discharge, and atmospheric pressure plasma.
Among them, a method using low-temperature plasma is most preferable from the viewpoint of controllability such as reproducibility and stability. in this case,
The method for generating plasma is not particularly limited, and a high-frequency discharge method (RF method) or a direct-current discharge method (DC method) can be used. Further, it is preferable to use a gas used for plasma generation that generates plasma stably and does not allow a precipitate based on the gas. Specifically, for example, argon (Ar), An inorganic gas such as oxygen (O ₂ ) is preferred.

The gas barrier vapor-deposited film of the present invention comprises
A metal or metal compound vapor-deposited thin film 11 is laminated on the surface 2 of the vapor-deposition PET film 10 as described above.

Here, as the metal or metal compound constituting the deposited thin film 11 on the surface 2 of the deposited PET film 10, metals such as aluminum, silica, titanium, zinc, zirconium, magnesium, tin, copper, iron, and the like can be used. Oxides, nitrides, sulfides, fluorides and the like of these metals, such as aluminum oxide (Al ₂ O ₃ ), silicon monoxide (Si
O), silicon dioxide (SiO ₂ ), titanium oxide (T
iO ₂ ), zinc oxide (ZnS), zirconium oxide (Z
rO ₂ ), magnesium oxide (MgO), magnesium fluoride (MgF ₂ ), tin oxide (SnO ₂ ), copper oxide (Cu
O), iron oxide (Fe ₂ O ₃ ) and the like. Among them, silicon oxide such as silicon monoxide and silicon dioxide and aluminum oxide such as aluminum monoxide, aluminum dioxide and aluminum trioxide are preferable from the viewpoint of gas barrier properties. Further, the vapor-deposited thin film is not limited to a single metal or metal compound described above, but may be a multilayer vapor-deposited thin film using a plurality of types.

As a method for forming the vapor-deposited thin film 11 from a metal or a metal compound, a physical vapor deposition method such as vacuum vapor deposition, ion plating, and sputtering can be used.

The thickness of the deposited thin film 11 is 5 to 500 n.
m is preferred. If the film thickness is too thin, the film is apt to come off, and the gas barrier property tends to vary.If the film thickness is too thick, the flexibility of the deposited thin film is impaired, cracks and pinholes are generated, and the gas barrier property is apt to deteriorate. .

The vapor-deposited thin film 11 of a metal or a metal compound as described above is laminated on the surface 2 of the PET film 10 for vapor deposition.
In obtaining the gas-barrier vapor-deposited film of the present invention, low-temperature plasma treatment is performed on the PET film 1 serving as the base material of the PET film 10 for vapor deposition, and lamination of a vapor-deposited thin film of a metal or a metal compound on the low-temperature plasma-treated surface. Is preferably performed in the same batch by in-line processing in which a deposited thin film is laminated immediately after low-temperature plasma processing. For this purpose, for example, it is preferable to use a vacuum deposition / surface treatment device 30 shown in FIG.

The vacuum deposition / surface treatment apparatus 30 shown in FIG. 3 includes an unwinding roll 32, a low-temperature plasma processing unit 33, a cooling drum 34, a winding roll 35, and a guide roll 36 in a roll chamber 31. Further, a vacuum evaporation unit 37 is provided adjacent to the roll chamber 31. Here, the unwinding roll 32 unwinds the PET film 1 to be subjected to the surface treatment, and the cooling drum 34 supports the PET film 1 to be subjected to the low-temperature plasma processing in the low-temperature plasma processing unit 33 and, if necessary, also. The metal drum is a metal drum that immediately guides the deposition PET film 10 whose surface is brought into a predetermined molecular bonding state by being cooled and further subjected to low-temperature plasma treatment, to the vacuum deposition unit 37. The vacuum evaporation unit 37 is provided with an evaporation source 38 made of a metal or a metal compound, which can be heated under vacuum. The take-up roll 35 is for winding the vapor-deposited film 20 in which the metal or metal compound vapor-deposited thin film 11 is formed on the surface of the vapor-deposition PET film 10, and the guide roll 36 is the take-up roll 32, the cooling drum 34, and the like. PET film 1 between winding roll 35, PET for vapor deposition
It guides the running of the film 10 or the vapor deposition film 20.

The inside of the vacuum deposition / surface treatment device 30 is used for low-temperature plasma processing by the low-temperature plasma processing unit 33 and for forming a deposited thin film in the vacuum deposition unit 37 at 1 × 10 ^-5 to 1 × 10 ^-6 Torr. It can be evacuated to a vacuum.

As described above, the illustrated PET film for vapor deposition 10 of the present invention and the vapor deposited film 20 in which the vapor-deposited thin film 11 of metal or metal compound is formed on the PET film for vapor deposition 10 have been described in detail. The present invention can take various aspects without being limited to this.

Further, the vapor deposition film 20 of the present invention can be subjected to a vapor deposition step, a printing step, a laminating step, a bag making step and the like, if necessary, to be formed into a desired form.

[0038]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below based on embodiments.

Example 1 Using the vacuum deposition / surface treatment apparatus 30 shown in FIG. 3, a PET film for vapor deposition of the present invention and a vapor-deposited film obtained by laminating a vapor-deposited thin film of silicon oxide thereon were produced as follows.

As the PET film 1, a film having a thickness of 12 μm and subjected to a one-sided corona treatment of a general packaging grade was used. The XPS (X-ray source: MgKα, output 100 W, manufactured by JEOL Ltd.) of the non-corona-treated surface of the PET film 1 was measured in advance, and the C1s waveform separation revealed that the benzene ring had a C—C bond. The value of the full width at half maximum (FWHM) is 1.
22 eV. Here, since the resolution as a standard substance was 0.8 to 1.0 eV at the 3d5 / 2 peak of silver (Ag), the non-corona-treated surface of this PET film 1 was not subjected to any surface treatment. It was confirmed that there was no PET molecular structure.

A DC magnetron discharge type using titanium (Ti) as a cathode was prepared as the low-temperature plasma processing unit 33 of the vacuum deposition / surface treatment apparatus 30. Then, after the entire vacuum deposition and surface treatment apparatus 30 is set to a degree of vacuum of 1.5 × 10 ⁻⁵ Torr, argon (5 × 10 ⁻³⁾ is introduced into the low-temperature plasma processing unit 33 so that the degree of vacuum becomes 5.0 × 10 ^−3. Ar), plasma was generated, and a low-temperature plasma treatment was performed on the non-corona-treated surface of the PET film 1 to obtain a PET film 10 for vapor deposition of the present invention.

The plasma processing parameter (Pe value) in the low-temperature plasma processing is 50 (W · min / m ² ).
XPS measurement of the low-temperature plasma-treated surface of the obtained PET film 10 for vapor deposition showed that the C1s waveform separation showed that the FWHM of the CC bond of the benzene ring (FWH) was obtained.
The value of M) was 1.23 eV.

Next, on the surface 2 of the low-temperature plasma-treated PET film 1 (that is, the PET film 10 for vapor deposition of the present invention) running while holding the cooling drum 34, a silicon oxide SiO film is formed. The deposited film 20 was formed by vapor deposition with a thickness of 500 angstroms. Next, when the deposition film 20 left the cooling drum 34 and was guided to the take-up roll 35 via the guide roll 36, the deposition film 20 was continuously wound on the take-up roll 35.

The silicon oxide S of the obtained deposited film 20
An unstretched polypropylene film having a thickness of 30 μm was bonded as a heat-adhesive resin to the deposition surface of iO by a dry lamination method to obtain a deposition film with a laminate layer.

Example 2 A plasma processing parameter (Pe value) when low-temperature plasma processing was performed by the low-temperature plasma processing unit 33 was 500.
(W · min / m ² ), and the value of the full width at half maximum (FWHM) of the CC bond of the benzene ring in the C1s waveform separation in the XPS measurement of the low-temperature plasma-treated surface of the obtained PET film for vapor deposition 10 is 1 Except that it was .42 eV
A vapor deposition film with a laminate layer was obtained in the same manner as in Example 1.

Embodiment 3 When the low-temperature plasma processing is performed by the low-temperature plasma processing unit 33, the plasma processing parameter (Pe value) is set to 1000.
(W · min / m ² ), and the value of the full width at half maximum (FWHM) of the CC bond of the benzene ring in the C1s waveform separation in the XPS measurement of the low-temperature plasma-treated surface of the obtained PET film for vapor deposition 10 is 1 Except that it was .55 eV
A vapor deposition film with a laminate layer was obtained in the same manner as in Example 1.

Example 4 The gas used in the low-temperature plasma processing unit 33 was changed to carbon dioxide (CO ₂ ) instead of argon (Ar), and the XPS measurement of the low-temperature plasma-processed surface of the obtained PET film 10 for vapor deposition was performed. The value of the half width (FWHM) of the CC bond of the benzene ring in the C1s waveform separation at 1.30 was 1.30.
Except for eV, a vapor deposition film with a laminate layer was obtained in the same manner as in Example 1.

Example 5 A thin film of aluminum oxide (thickness 5) was used instead of a thin film of silicon oxide SiO (thickness 500 Å).
(00 angstrom) was obtained in the same manner as in Example 1 to obtain a deposited film with a laminate layer.

Example 6 A thin film of aluminum (thickness: 500 Å) was used instead of a thin film of silicon oxide SiO (thickness: 500 Å).
Angstrom) was formed in the same manner as in Example 1 to obtain a deposited film with a laminate layer.

COMPARATIVE EXAMPLE 1 No plasma was generated in the low-temperature plasma processing unit 33, and the plasma processing parameter— (Pe value) was set to 0 (W · m).
in / m ² ), and the non-corona-treated surface of the PET film 1 that has passed through the low-temperature plasma processing unit 33 (the surface on which the deposited film is formed)
Of benzene ring in C1s waveform separation in XPS measurement of
A vapor deposition film with a laminate layer was obtained in the same manner as in Example 1, except that the value of the half-width (FWHM) of -C bond was 1.22 eV.

Comparative Example 2 The plasma processing parameter (Pe value) when the low-temperature plasma processing was performed by the low-temperature plasma processing unit 33 was 5000.
(W · min / m ² ), and the value of the full width at half maximum (FWHM) of the CC bond of the benzene ring in the C1s waveform separation in the XPS measurement of the low-temperature plasma-treated surface of the obtained PET film for vapor deposition 10 is 1 Except that it was .58 eV
A vapor deposition film with a laminate layer was obtained in the same manner as in Example 1.

Comparative Example 3 No plasma was generated in the low-temperature plasma processing unit 33, and the plasma processing parameter— (Pe value) was set to 0 (W · m).
in / m ² ) and the corona-treated surface of the PET film 1 that has passed through the low-temperature plasma processing unit 33
A laminated film with a laminated layer was obtained in the same manner as in Example 1 except that the deposited thin films were laminated. In this case, PET
The full width at half maximum (FWHM) of the CC bond of the benzene ring in the C1s waveform separation in the XPS measurement of the corona-treated surface (the surface on which the vapor-deposited film was formed) of the film 1 was 1.60 eV. Without generating plasma, the plasma processing parameter-(Pe value) was set to 0 (W · m).
in / m ² ), and the non-corona-treated surface of the PET film 1 that has passed through the low-temperature plasma processing unit 33 (the surface on which the deposited film is formed)
Of benzene ring in C1s waveform separation in XPS measurement of
The value of the full width at half maximum (FWHM) of the -C bond is 1.22 eV, and the deposited thin film of aluminum oxide (thickness 500 Å) is replaced with the deposited thin film of silicon oxide SiO (thickness 500 Å). ) Was obtained in the same manner as in Example 1 except that (1) was formed.

Comparative Example 5 The plasma processing parameter- (Pe value) was set to 0 (W · m) without generating plasma in the low-temperature plasma processing unit 33.
in / m ² ), and the non-corona-treated surface of the PET film 1 that has passed through the low-temperature plasma processing unit 33 (the surface on which the deposited film is formed)
Of benzene ring in C1s waveform separation in XPS measurement of
The value of the full width at half maximum (FWHM) of the -C bond is 1.22 eV, and the deposited thin film of aluminum (thickness 500 Å) is used instead of the deposited thin film of silicon oxide SiO (thickness 500 Å). Was formed in the same manner as in Example 1 except that a film was formed.

Evaluation Examples 1 to 6 and Comparative Examples 1 to 6 produced as described above.
The peel strength was measured according to the following measurement conditions in order to evaluate the adhesion characteristics of the laminated film with a laminated layer of 11 examples of 5 in total. Table 1 shows the results.

Peel strength measurement conditions: Instron type tensile tester, sample 15 mm width, peel angle 90 °, peel speed 30
0 mm / min.

[0056]

[Table 1] Plasma treatment degree Gas type CC bond Deposited thin film Peel strength (Pe) Wmin / m ² (FWHM) eV gf / 15mm Example 1 50 Ar 1.23 SiO 500 Example 2 500 Ar 1.42 SiO 600 Example 3 1000 Ar 1.55 SiO 800 Example 4 50 CO ₂ 1.30 SiO 550 Example 5 50 Ar 1.23 AlO _x 850 Example 6 50 Ar 1.23 Al 200 Comparative Example 10 Ar 1.22 SiO 250 Comparative Example 2 5000 Ar 1.58 SiO 250 Comparative Example 30 (* 1) − 1.60 SiO 250 Comparative Example 4 0 Ar 1.22 AlO _x 300 Comparative Example 5 0 Ar 1.22 Al 50 Table 1 Note (* 1) Laminated vapor deposited thin film on corona treated surface of PET film

From Table 1, it can be seen that the vapor-deposited films of Examples 1 to 6 show that the C of the benzene ring in the C1s waveform separation by XPS measurement on the surface of the PET film on which the vapor-deposited thin film is laminated.
The value of the half width (FWHM) of -C bond is 1.225 to 1.25.
It turns out that it is in the range of 554 eV. And PET
Examples 1 to 3 in which a deposited thin film of silicon oxide was formed on a film
In the vapor-deposited film of Example 4, the peel strength was higher than the vapor-deposited films of Comparative Examples 1 to 3 in which a vapor-deposited thin film of silicon oxide was formed on a PET film, and an example in which a vapor-deposited thin film of aluminum oxide or aluminum was formed. 5, Example 6
The vapor-deposited film also has a higher peel strength than the vapor-deposited films of Comparative Examples 4 and 5 in which a vapor-deposited thin film of aluminum oxide or aluminum is formed, and therefore, the present invention limits the PET film surface on which the vapor-deposited thin film is formed. It can be seen that the adhesion of the deposited film can be improved by setting the specific molecular bonding state.

[0058]

According to the present invention, the molecular bonding state on the surface of the PET film for vapor deposition is determined by measuring the half width (FWHM) of the CC bond of the benzene ring in the PET molecular structure by XPS C1s waveform separation. The value is limited to the range of 1.225 to 1.554 eV. Therefore, the adhesion to the metal or metal compound deposited thin film formed on this surface is improved. Therefore, a vapor deposition film composed of a vapor-deposited PET film having a specific surface and a vapor-deposited thin film of a metal or a metal compound is used in a manufacturing process of the vapor-deposited film or a processing step such as bag making when forming the vapor-deposited film as a packaging material. In addition, when the vapor-deposited film is used in various packaging forms, peeling of the vapor-deposited thin film of metal or metal compound from the PET film is prevented, and high gas barrier properties can be maintained.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a deposition PET film of the present invention.

FIG. 2 is a sectional view of a vapor deposition film of the present invention.

FIG. 3 is a schematic explanatory view of a vacuum deposition and surface treatment apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 PET film 2 PET film surface 10 PET film for vapor deposition 11 Vapor deposited thin film of metal or metal compound 20 Vapor deposited film 30 Vacuum vapor deposition and surface treatment device

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁶ Identification code FI // C08J 7/00 306 C08J 7/00 306

Claims (7)

[Claims] 1. A polyethylene terephthalate film on which a vapor-deposited thin film of a metal or a metal compound is laminated, wherein a surface in contact with the vapor-deposited thin film of a metal or a metal compound is subjected to X-ray photoelectron spectroscopy measurement (measurement conditions: X-ray source MgKα, output 100 W )
The C-s of the benzene ring in the C1s waveform separation
A polyethylene terephthalate film for vapor deposition, wherein the half width of C bond is 1.225 to 1.554 eV. 2. The polyethylene terephthalate film for vapor deposition according to claim 1, wherein the surface of the polyethylene terephthalate film is subjected to low-temperature plasma treatment. 3. A vapor-deposited film, wherein a vapor-deposited thin film of a metal or a metal compound is laminated on the polyethylene terephthalate film for vapor-deposition according to claim 1 or 2. 4. The vapor-deposited film according to claim 3, wherein the metal or metal compound forming the vapor-deposited thin film comprises silicon oxide. 5. The vapor-deposited film according to claim 3, wherein the metal or metal compound forming the vapor-deposited thin film comprises aluminum oxide. 6. A low-temperature plasma treatment is performed on the surface of a polyethylene terephthalate film for vapor deposition on which a vapor-deposited thin film of a metal or metal compound is laminated, and then a vapor-deposited thin film of a metal or metal compound is laminated on the surface of the low-temperature plasma-treated polyethylene terephthalate film. And a method for producing a vapor-deposited film, wherein the low-temperature plasma treatment and the lamination of the vapor-deposited thin film are performed by in-line processing. 7. As a vapor-deposited thin film of a metal or a metal compound,
The method for producing a vapor-deposited film according to claim 6, wherein a vapor-deposited thin film of silicon oxide or aluminum oxide is laminated.