JPH11112061A - Formation of thin organic film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To form a flat and compact flawless thin organic film by immersing an oxidized III-V compound semiconductor substrate into a solution containing amphiphilic organic molecules having a PH2 O3 group derivative as the terminal group so that the organic molecules are adsorbed onto the surface of the substrate. SOLUTION: In the method for forming a thin organic film, an oxidized III-V compound semiconductor substrate is immersed into a solution containing amphiphilic organic molecules having a PH2 O3 group derivative as the terminal group so that the organic molecules are adsorbed onto the surface of the substrate. More specifically, a GaAs substrate 2 is immersed after the surface thereof is cleaned, into placed in a first bath 1 (a container filled with H2 O3 P(CH2 )18 PO3 H2 solution). It is then cleaned in a second bath 3 filled with pure ethanol in order to remove excess octadecyl bisphosulfonic acid molecules. Subsequently, it is immersed into a third bath 4 (a container filled with ZrOCl2 -8H2 O) and transferred into the pure ethanol in second bath 5 in order to remove excess Zr ions by ultrasonic cleaning. Thereafter, the substrate 2 is returned back to the H2 O3 P(CH2 )18 PO3 H2 solution in a fourth bath 6 so that a layer of octadecyl bisphosulfonic acid molecule is adsorbed uniformly onto the substrate 2 and the process of second-third-second-fourth baths is repeated cyclically for the substrate 2.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a monomolecular and organic cumulative film two-dimensionally and regularly arranged on an oxide III-V compound semiconductor substrate.

[0002]

2. Description of the Related Art Conventionally, as an organic monomolecular film or an organic cumulative film, Langmuir Blodget (Langmuir Blodget) has been used.
An ir Blodgett film (hereinafter, referred to as an LB film) and a self-assembled film (self-assembled monolayer) are known (A
braham Ulman: An Intorductionto Ultrarhin Organic F
ilms From Langmuir ー Blodgett to Self ー Assembly, Acade
mic Press 1991). The LB film develops an amphipathic molecule having both a hydrophilic atomic group and a hydrophobic atomic group as a monomolecular film on the water surface (L film), and transfers it to a solid substrate to accumulate several layers. Langmuir, who developed this method,
The LB film is named after the name of Blodgett. The LB film transfers the film developed on the water surface to the substrate by utilizing the difference in hydrophobicity and hydrophilicity between the film and the substrate. Therefore, the crystallinity of the film itself is determined when the film is developed and compressed. Is determined by Therefore, the crystallinity of the film does not depend on the type of the substrate, and the film can be formed on any substrate. However, due to the nature of the LB film, the interaction between the substrate and the monomolecular film is extremely weak.
When constructing a complicated device, it has a disadvantage that it is weak in acid-alkali resistance, durability and the like. In addition, in order to produce an LB film, a special device for developing an amphipathic molecule on a solution surface, compressing the molecule in a plane, and then copying the molecule onto a substrate is required.

On the other hand, a self-assembled film is a film obtained by selectively chemically adsorbing a functional group at a terminal of a molecule to a constituent atom of a substrate. Therefore, due to the nature of the adsorption mechanism, only a monomolecular film is formed in a self-assembled state, so that a self-assembled monol film is formed.
ayer). Since a film can be formed simply by immersing the substrate in a solvent containing molecules, a large and complicated device is not required, and it is also possible to form a cumulative film by selecting the type of the terminal groups outside the resulting self-assembled film. It is possible in principle. These molecular films form a two-dimensional molecular assembly by the Van der Waals force between molecules, and use these methods to create a regular array of molecular packing, that is, create a two-dimensional crystal. can do. Various electronic devices, optical devices, and the like can be constructed by utilizing this feature.

[0004] This self-assembled film does not have the above-mentioned drawbacks unlike the LB film. However, since it utilizes chemical adsorption between a functional group of a molecule and a substrate, the combination thereof is restricted. Aluminum, silver oxide, mica,
A monomolecular film has been realized on a substrate of gold, copper, GaAs or the like. For a GaAs substrate only, a GaAs substrate is terminated with As by a hydrochloric acid treatment, and then a melt of organic molecules containing SH groups is applied to the surface in a nitrogen atmosphere, and is held at about 100 ° C. for 5 hours. At present, an assembling film has been obtained.

As described above, while the self-assembled film has many advantages as compared with the LB film, the number of examples of the self-assembled film on the III-V compound semiconductor and the multilayer film thereof has been extremely small so far. . Forming a multilayer film while inheriting many advantages of a self-assembled film can exhibit characteristics that cannot be realized with a more complex monomolecular film, and a multi-layer film is expected to amplify functionality. Therefore, it is a very important technology.

[0006]

The technical problem to be solved by the present invention is to selectively chemisorb a film-forming molecule onto an oxidized III-V compound semiconductor substrate, which has never been before, to obtain a high-quality film with few defects. At the atomic level, it is possible to control the film thickness in units of molecular length by producing a strong and monolayer organic monolayer and accumulating different types of organic molecules on the monolayer using chemisorption. It is an object of the present invention to provide a method for producing an organic thin film which is flat, dense, and free from pinholes.

[0007]

In order to solve the above-mentioned problems, the method for producing an organic thin film of the present invention basically comprises oxidizing a III-V compound semiconductor substrate with a terminal group of PH ₂ O _3.
An object of the present invention is to form a first organic monomolecular film by immersing in a solution containing an amphiphilic organic molecule having a group derivative and chemically adsorbing the organic molecule on the substrate surface. The first organic monolayer is immersed in a solution containing metal ions to adsorb the metal ions on the surface of the monolayer, or to convert the surface functional groups into OH groups by chemical treatment. Alternatively, by immersing in a solution containing an organic molecule having a functional group that selectively chemisorbs to the OH group,
An organic monomolecular film can be further accumulated on the first organic monomolecular film.

In the above method, the step of accumulating an organic monomolecular film further on the first organic monomolecular film is repeated, so that the thickness between the organic films is controlled while controlling the film thickness in units of organic molecular length. It is possible to form a cumulative film having a strong bonding force and in which the in-plane directions of the film are regularly arranged. According to such a method of the present invention, a group III-V compound semiconductor substrate is used, and a selective chemisorption phenomenon with a molecule having a PH ₂ O ₃ group at a terminal is used, so that the substrate is of good quality and firmly attached to the substrate. A monomolecular film and a cumulative multilayer film, which are regularly arranged in both the lateral direction and the vertical direction, are formed. Therefore, the functionality of the film can be maximized, and a film having excellent resistance to acid and alkali, durability, and reliability and excellent insulating properties can be manufactured.

[0009]

DESCRIPTION OF THE PREFERRED EMBODIMENTS In the method of manufacturing an organic thin film according to the present invention, when forming an organic monomolecular film (first organic monomolecular film) on an oxidized III-V compound semiconductor substrate, First, in an organic solvent obtained by diluting an amphiphilic organic molecule having a PH ₂ O ₃ group derivative at the terminal group,
By exposing the oxidized surface of the II-V compound semiconductor substrate, organic molecules are chemically adsorbed on the substrate to form a monomolecular film of the molecules. More specifically, as the amphiphilic organic molecule forming the first organic monomolecular film, an organic molecule having a COOH group or PH ₂ O ₃ group at the other end can be used. When further accumulating the organic monomolecular film on the first organic monomolecular film, the substrate is immersed in a solution containing metal ions.
Immersion in a solution containing an amphipathic molecule having an SH group at one end and a COOH group at the other end or a solution containing an amphipathic molecule having a PH ₂ O ₃ group at both ends to accumulate an organic monomolecular film . This process may be repeated to accumulate more layers.

Further, the oxidized III-V compound semiconductor substrate is provided with a PH ₂ O ₃ group derivative at one end and CO 2 at the other end.
A first organic monomolecular film can be formed by immersing in a solution containing an amphiphilic organic molecule having an OCH ₃ group or a CH ₂ ＣＨCH group to chemically adsorb the organic molecule on the surface; In this case, when the organic monomolecular film is further accumulated, the substrate is dissolved in an organic solvent to form LiAl.
By treating with a H ₄ solution and dilute hydrochloric acid, or with a B ₂ H ₆ solution and a mixed solution of sodium hydroxide and hydrogen peroxide dissolved in an organic solvent,
After conversion to H group, COOCH ₃ group or C
The substrate is immersed in a solution containing an amphipathic molecule having an H ₂ ＣＨCH group and having an SiCl ₃ group at the other end, and an organic monomolecular film is further accumulated on the first organic monomolecular film.

An organic thin film is formed by using hexadecylbisphosphonic acid [H ₂ O ₃ P (CH ₂ ) ₁₅ PO ₃ H ₂ ] as an amphipathic organic molecule having a PH ₂ O ₃ group derivative at a terminal group. In the case of, for example, 10 mM with pure ethanol
In hexadecylbisphosphonic acid solution diluted in water
When the II-V compound semiconductor substrate is cleaned and immersed as it is after natural oxidation, the immersion time can be generally 1 hour to 10 days, but is preferably 1 hour to 3 days. More preferably, it is 1 hour to 12 hours. Although the case where a monomolecular film is obtained using 16-hexadecylphosphonic acid is described here, the case where a film of a molecule having another PH ₂ O ₃ group is formed is also generally described above. Where applicable.

After the formation of the first monomolecular film, when the organic multilayer film is accumulated on the self-assembled film formed on the III-V compound semiconductor surface, for example, copper diluted to 1 mM with pure ethanol is used. Acetate [(CH ₃ CO
When the III-V compound semiconductor substrate is immersed in the O) ₂ Cu] solution, the immersion time can be generally from 1 second to 30 minutes, but is preferably from 10 seconds to 10 minutes. It is more preferable to set the time to seconds to 5 minutes. After removing the substrate and performing ultrasonic cleaning with pure ethanol, when accumulating the second organic molecular film, for example, a self-assembly in which 15-mercaptohexadecylcarboxylic acid solution diluted to 10 mM with pure ethanol was treated with Cu ions. When the film GaAs substrate is immersed, the immersion time can be generally from 30 minutes to 10 days, preferably from 40 minutes to 1 day, and more preferably from 1 to 4 hours. By immersing the substrate alternately in a copper acetate solution and a 15-mercaptohexadecyl carboxylic acid solution under the same conditions as in the second and subsequent layers, a cumulative film having a predetermined thickness can be obtained.

Although the case where a multilayer film is accumulated using 15-mercaptohexadecyl carboxylic acid is described here, the case where another organic molecule accumulation film is formed is generally the same as that described above. Can be applied. In each of the above examples, the solution concentration was 10 m
Although the case where the number is limited to M has been described, in order to obtain the organic molecular film as described above, it is necessary to adjust the immersion time according to the concentration. Hereinafter, more specific preferred embodiments will be exemplified together with examples of the present invention.

[First Embodiment] FIG. 1 is a view for explaining an example of an embodiment for manufacturing an organic multilayer thin film according to the present invention. In the figure, a first tank 1 contains an ethanol solvent 1 mM octadecylbisphosphonic acid [H ₂
O ₃ P (CH ₂ ) ₁₈ PO ₃ H ₂ ] solution. When manufacturing an organic thin film, first, H ₂ O ₂ and H
After the surface is cleaned with a mixed solution of ₂ SO ₄ , the GaAs substrate 2 washed and dried with pure water is immersed in the solution in the first tank. The temperature of the solution when octadecylbisphosphonic acid is chemisorbed may be room temperature or may be heated. As the solvent, an organic solvent other than the ethanol solution may be used, or pure water may be used, but an organic solvent is preferable. The GaAs substrate 2 is immersed in the solution of the first tank 1, immersed in the solution for several hours (for example, 4 hours), taken out of the solution, and washed with pure ethanol filled in the second tank 3. Then, excess octadecylbisphosphonic acid molecules attached to the surface are removed (Step 1 above).

Next, this substrate was diluted with ethanol diluted 1 mM zirconium oxychloride [ZrOCl
Immersion for about 5 minutes to ₂ · 8H ₂ O] solution. As zirconium oxychloride, a powdery one or a liquid one may be used. The temperature of the solution when chemisorbing Zr ions may be room temperature or may be heated. As the solvent, an organic solvent other than the ethanol solution may be used, or pure water may be used, but an organic solvent is preferable. Next, the GaAs substrate 2 is taken out of the solution in the third tank 4, transferred to pure ethanol in the second tank 5, and subjected to ultrasonic cleaning to remove excess Zr ions attached to the surface of the Zr cluster or the like ( Step 2) above. Next, G
The aAs substrate 2 is returned to the ethanol solvent 1 mM octadecylbisphosphonic acid solution in the fourth tank 6 and immersed for about 2 hours. On the GaAs substrate 2 whose surface is covered with Zr ions, octadecylbisphosphonic acid molecules are further added. Adsorb one layer uniformly. Thereafter, by repeating the above-described steps on the GaAs substrate 2 in the order of the second tank → third tank → second tank → fourth tank, octadecylbisphosphonic acid molecules can be accumulated one layer at a time. it can.

FIG. 2 is a graph showing a change in film thickness by ellipsometry from one layer to five layers laminated by the above process. It can be seen that as the number of repetitions increases, the film thickness increases by the same thickness, and the octadecylbisphosphonic acid molecules are stacked one by one. Also,
Observation of the resulting five-layer cumulative film with an atomic force microscope revealed that the film was dense and flat at the atomic level without pinholes. In the present embodiment, G
The case where the aAs substrate is used has been described.
Group V compound semiconductor substrate, GaP, GaSb, InP, I
By applying a similar method to a substrate such as nAs or InSb, a dense and extremely uniform multilayer film without pinholes can be laminated on the cleavage plane.

[Embodiment 2] FIG. 3 is for explaining another example of an embodiment for manufacturing an organic multilayer thin film according to the present invention. In FIG. 1, a first tank 8 is a container filled with a 1 mM octadecylbisphosphonic acid [H ₂ PO ₃ (CH ₂ ) ₁₈ PO ₃ H ₂ ] solution in an ethanol solvent. H ₂ O
After cleaning the surface with a mixed solution of ₂ and H ₂ SO ₄ , the GaSb substrate 7 washed and dried with pure water is immersed in the solution in the first tank 8. As the octadecylbisphosphonic acid, a powdery one or a liquid one may be used. The temperature of the solution when octadecylbisphosphonic acid is chemically adsorbed may be room temperature or heated. As the solvent, an organic solvent other than the ethanol solution may be used, or pure water may be used, but an organic solvent is preferable. The GaSb substrate 7 is immersed in the solution of the first tank 8 and then left in the solution for several hours (for example, 5 hours).
After immersion, it is taken out of the solution and washed with pure ethanol filled in the second tank 9 to remove excess octadecylbisphosphonic acid molecules attached to the surface (Step 1 above).

Next, the substrate 7 was placed in a third tank 10 and diluted with 1 mM zirconium acetate in ethanol [(CH ₃ CO 2).
O) ₄ Zr] solution for about 10 minutes. As zirconium acetate, powdery ones may be used,
A liquid may be used. The temperature of the solution when chemisorbing zirconium acetate may be room temperature or may be heated. As the solvent, an organic solvent other than the ethanol solution may be used, or pure water may be used, but an organic solvent is preferable. Next, the GaSb substrate 7 is taken out of the solution in the third tank 10, transferred to pure ethanol in the second tank 11, and subjected to ultrasonic cleaning to remove excess Zr ions attached to the surface.

Next, the GaSb substrate 7 is put into an ethanol solvent 1 mM 15-mercaptooctadecyl carboxylic acid [HS (CH ₂ ) ₁₅ COOH] solution placed in the fourth tank 12 and immersed for about 4 hours. On the self-assembled film of the GaSb substrate 7 covered with ions,
One layer of 5-mercaptooctadecylcarboxylic acid molecules is adsorbed (step 2 above). Thereafter, by repeating the step 2 (after immersion in the third tank 10) after washing in the second tank 11, the 15-mercaptooctadecylcarboxylic acid molecules can be accumulated one layer at a time. The above steps were repeated five times, and the film thickness was measured by ellipsometry to be about 14 nm. Indeed, it was confirmed that one layer of octadecylbisphosphonic acid was
It was confirmed that four layers of 5-mercaptooctadecylcarboxylic acid were formed. In the present embodiment,
The case where a GaSb substrate is used has been described.
II-V compound semiconductor substrate, GaP, GaAs, In
By applying a similar method to a substrate such as P, InAs, and InSb, a multilayer film can be stacked on the cleavage plane.

[Embodiment 3] FIG. 4 is for explaining another example of an embodiment for manufacturing an organic multilayer thin film according to the present invention. In the figure, the first tank 14 is
17-acetoxyheptadecylphosphonic acid [H ₃ C
[O ₂ C (CH ₂ ) ₁₇ PO ₃ H ₂ ] solution. When manufacturing an organic thin film, first, the InSb substrate 13 is cleaved in the solution in the first tank 14. The surface of the substrate 13 can be formed in the same manner as in the first embodiment. As 18-phosphonic tridecanoate, a powdery one or a liquid one may be used. The temperature of the solution when chemisorbing 18-phosphonic tridecanoate may be room temperature or may be heated. As the solvent, an organic solvent other than the ethanol solution may be used, or pure water may be used, but an organic solvent is preferable. The InSb substrate 13 is immersed in the solution in the first tank 14 for several hours and then taken out of the solution, washed with pure ethanol in the second tank 15, and washed with excess 18-phosphonic tridecanoate molecules attached to the surface. (Step 1).

Next, the substrate 13 is made of 1M LiAlH dissolved in tetrahydrofuran in a third tank 16.
₄ After immersion in the solution for about 10 minutes, the COOCH ₃ groups exposed on the surface are converted into OH groups by further immersion in a 20% diluted hydrochloric acid solution contained in the fourth tank 17. COOCH
The temperature of the solution when the _three groups are converted to OH groups may be room temperature or may be heated. As the solvent, an organic solvent other than the tetrahydrofuran solution may be used, or pure water may be used. Thereafter, the InSb substrate 13 is taken out of the solution and washed with pure water in the fifth tank 18. Next, In
1 mM 2 dissolved in a solvent having a mixing ratio of hexadecane: carbon tetrachloride = 4: 1 in which the Sb substrate 13 was placed in the sixth tank 19
2-acetoxide docosanyl trichlorosilane [CH ₃ C
OO (CH ₂ ) ₂₂ SiCl ₃ ] solution, and immersed for about 4 hours. On the InSb substrate 13 on which a self-assembled film whose surface is covered with OH groups is further formed,
-Adsorb one layer of trichlorosyl tridecanoate (step 2 above).

Thereafter, the process of step 2 is repeated after washing in the second tank 20, whereby 23-trichlorosyltridecanoate can be accumulated one layer at a time. The above process was repeated 10 times, and the film thickness was measured by ellipsometry to be about 32 nm. It was confirmed that one layer of mercaptohexadecyl acetate and 23 layers of 23-trichlorosyltridecanoate were formed. Was done. In the present embodiment,
The case where the InSb substrate is used has been described.
II-V compound semiconductor substrate, GaP, GaAs, GaS
By applying the same method to a substrate such as b, InP, InAs, etc., a multilayer film can be stacked on the cleavage plane.

[Embodiment 4] FIG. 5 is for explaining still another example of an embodiment for manufacturing an organic multilayer thin film according to the present invention. In the figure, the first tank 2
Reference numeral 2 denotes a container filled with an ethanol solvent 1 mM 16-hexadecenylphosphonic acid [CH ₂ ＣＨCH (CH ₂ ) ₁₄ PO ₃ H ₂ ] solution.
First, the InAs substrate 21 is immersed in the solution in the first tank 22. The surface of the substrate 21 can be manufactured in the same manner as in the first embodiment. The temperature of the solution when chemisorbing 16-hexadecenylphosphonic acid may be room temperature or may be heated. As the solvent, an organic solvent other than the ethanol solution may be used, or pure water may be used, but an organic solvent is preferable. The InAs substrate 21
After being immersed in the solution in the first tank 22 for several hours, it is taken out of the solution, washed with pure ethanol in the second tank 23,
Excess 16-hexadecenylphosphonic acid molecules attached to the surface are removed (Step 1 above).

Next, the substrate 21 is immersed in a 1M B ₂ H ₆ solution dissolved in tetrahydrofuran in a third tank 24 for about 1 minute, and then the hydrogen peroxide 30% in a fourth tank 25 is added. By immersing in a 0.1 M sodium hydroxide mixed solution of the above, the CH ₂ ＣＨCH groups exposed on the surface are transformed into OH groups. The temperature of the solution when the CH ₂ ＣＨCH group is converted to an OH group may be room temperature or may be heated. As the solvent, an organic solvent other than the tetrahydrofuran solution may be used, or pure water may be used, but an organic solvent is preferable. After immersing the InAs substrate 21 in the solution, it is taken out of the solution and washed with pure water in the fifth tank 26. Next, the InAs substrate 21 is placed in the sixth tank 27.
1 mM 16-vinyltetradecyltrichlorosilane [CH ₂ ＣＨCH (CH ₂ ) ₁₄ SiCl dissolved in a solvent having a mixing ratio of hexadecane: carbon tetrachloride = 4: 1
₃ ] The solution is immersed in the solution for about 5 hours, and one layer of 16-hexadecenyltrichlorosilane is further adsorbed on the InAs substrate 21 on which the self-assembled film whose surface is covered with OH groups is formed. , Step 2).

Thereafter, by repeating the process of step 2 after washing in the second tank 28, 16-hexadecenyltrichlorosilane can be accumulated one layer at a time. The above steps were repeated 20 times, and the film thickness was measured by ellipsometry to be about 39 nm. Indeed, 19 layers of 16-hexadecenylphosphonic acid and 16-hexadecenyltrichlorosilane were formed. It was confirmed that it was done. In the present embodiment, InAs, GaAs, GaSb, InP, InS
For substrates such as b, by applying the same method,
A multilayer film can be stacked on the cleavage plane.

[0026]

[Brief description of the drawings]

FIG. 1 is a schematic explanatory view of a method for manufacturing an organic laminated thin film described as Embodiment 1 of the present invention.

FIG. 2 is a graph showing a change in film thickness according to the number of laminations by ellipsometry of an organic laminated thin film obtained in an example of the present invention.

FIG. 3 is a schematic explanatory view of a method for manufacturing an organic laminated thin film described as Embodiment 2 of the present invention.

FIG. 4 is a schematic explanatory view of a method for manufacturing an organic laminated thin film described as Embodiment 3 of the present invention.

FIG. 5 is a schematic explanatory view of a method for manufacturing an organic laminated thin film described as Embodiment 4 of the present invention.

[Explanation of symbols]

1 tank filled with 1 mM octadecylbisphosphonic acid solution 2 GaAs substrate 3,5,9,11,15,23 tank filled with pure ethanol solution 4 tank with 1 mM zirconium oxychloride solution 6,8 1 mM octadecylbisphosphonic acid Solution tank 7 GaSb substrate 10 1 mM zirconium acetate solution tank 12 1 mM 17-mercaptooctadecylcarboxylic acid solution tank 13 InSb substrate 14 1 mM 17-acetoxyheptadecylphosphonic acid tank 16 1 M LiAlH ₄ solution tank 20 20% dilute hydrochloric acid solution over the tank 19 1MM22- acetoxymethyl docosanyl trichlorosilane vat 21 InAs substrate tank 18,20,26,28 pure water solution 22 1MM17- acetoxymethyl heptadecyl FOSS sulfonic acid bath 24 1M of B ₂ H ₆ solution tank 25 acid Bath 27 1MM16- vinyl tetradecyl trichlorosilane hydrogen 30% 0.1M sodium hydroxide mixed solution

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Kazushi Fujioka 22-22 Nagaikecho, Abeno-ku, Osaka City, Osaka Inside Sharp Corporation (72) Inventor Mikihiro Yamanaka 22-22 Nagaikecho, Abeno-ku, Osaka City, Osaka Co., Ltd. (72) Inventor Satoko Mitarai 22-22 Nagaikecho, Abeno-ku, Osaka City, Osaka Incorporated (72) Inventor Yoji Tokumoto 1-1-4 Higashi, Tsukuba, Ibaraki Pref. Inside

Claims (6)

[Claims] 1. An oxidized III-V compound semiconductor substrate,
An organic monomolecular film is formed by immersing in a solution or melt containing an amphipathic organic molecule having a PH ₂ O ₃ group derivative in the terminal group and chemically adsorbing the organic molecule on the substrate. A method for producing an organic monomolecular thin film. 2. The method according to claim 1, wherein the amphiphilic organic molecule forming the organic monomolecular film has COO at the other end.
After forming a first organic monomolecular film using an organic molecule having an H group, this is immersed in a solution containing a transition metal ion, and then having an SH group at one end and a COOH group at the other end. A method for producing an organic thin film, characterized by immersing in a solution containing an amphipathic molecule and accumulating an organic monomolecular film on the first organic monomolecular film. 3. The method according to claim 1, wherein the amphiphilic organic molecule forming the organic monomolecular film has PH _{2 at the} other end.
After forming a first organic monomolecular film using an organic molecule having an O ₃ group, this is immersed in a solution containing a transition metal ion, and then having a PH ₂ O ₃ group at one end and PH ₂ O
_A method for producing an organic thin film, characterized by immersing in a solution containing an amphipathic molecule having _three groups, and further accumulating an organic monomolecular film on the first organic monomolecular film. 4. The method according to claim 1, wherein the amphiphilic organic molecule forming the organic monomolecular film has CH _{2 at the} other end.
= Using a solution containing an amphiphilic organic molecule having a CH group, immersing the substrate in the solution, and chemically adsorbing the organic molecule on the substrate to form a first organic monomolecular film. after treatment with a mixed solution of crowded I B ₂ H ₆ solution and sodium hydroxide and hydrogen peroxide dissolved in, CH ₂ at one end
An organic thin film characterized by being immersed in a solution containing an amphipathic molecule having a CH group and having a SiCl ₃ group at the other end, and further accumulating an organic monolayer on the first organic monolayer. Manufacturing method. 5. The method according to claim 1, wherein the amphiphilic organic molecule forming the organic monomolecular film has COO at the other end.
A first organic monomolecular film is formed by immersing the substrate in a solution containing an amphipathic organic molecule having a CH ₃ group and chemically adsorbing the organic molecule on a substrate, and LiAlH is dissolved in an organic solvent. ₄ After treatment with a solution and dilute hydrochloric acid, the substrate is immersed in a solution containing an amphipathic molecule having a COOCH ₃ group at one end and a SiCl ₃ group at the other end, and further immersing the organic monomolecular film on the first organic monomolecular film A method for producing an organic thin film, comprising accumulating films. 6. The method according to claim 2, wherein the step of accumulating the organic monomolecular film on the first organic monomolecular film is repeated to sequentially accumulate the organic films. A method for producing an organic thin film, comprising: